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IDB30E60ATMA1 IDB30E60ATMA1 INFINEON TECHNOLOGIES IDB30E60ATMA1.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; TO263-3; Ufmax: 2V
Mounting: SMD
Max. forward voltage: 2V
Load current: 30A
Max. off-state voltage: 0.6kV
Case: TO263-3
Features of semiconductor devices: fast switching
Type of diode: rectifying
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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S25FL128SAGNFI000 S25FL128SAGNFI000 INFINEON TECHNOLOGIES 001-98283%20Rev%20T.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; SPI; 133MHz; 2.7÷3.6V; WSON8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
auf Bestellung 279 Stücke:
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16+4.69 EUR
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S25FL128SAGNFI001 S25FL128SAGNFI001 INFINEON TECHNOLOGIES 001-98283%20Rev%20T.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; SPI; 133MHz; 2.7÷3.6V; WSON8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
auf Bestellung 131 Stücke:
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15+5.11 EUR
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S25FL128SAGNFI011 S25FL128SAGNFI011 INFINEON TECHNOLOGIES Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; SPI; 133MHz; 2.7÷3.6V; WSON8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
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13+5.59 EUR
15+5.05 EUR
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S25FL128SAGNFV001 S25FL128SAGNFV001 INFINEON TECHNOLOGIES Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: tube
auf Bestellung 66 Stücke:
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27+2.7 EUR
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BAT5404E6327HTSA1 BAT5404E6327HTSA1 INFINEON TECHNOLOGIES BAT5404E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 230mW
Type of diode: Schottky switching
Mounting: SMD
Load current: 0.2A
Power dissipation: 0.23W
Max. forward impulse current: 0.6A
Max. forward voltage: 0.8V
Max. off-state voltage: 30V
Case: SOT23
Semiconductor structure: double series
auf Bestellung 475 Stücke:
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250+0.29 EUR
329+0.22 EUR
374+0.19 EUR
475+0.16 EUR
Mindestbestellmenge: 250
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TLD5097EPXUMA1 INFINEON TECHNOLOGIES Infineon-TLD5097EP-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c620b58a1180e Category: LED drivers
Description: IC: driver; SMPS controller,LED driver; Litix™; PG-TSDSO-14; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: LED driver; SMPS controller
Technology: Litix™
Case: PG-TSDSO-14
Output current: -550...380mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 4.5...45V DC
Protection: overheating OTP
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TLD5098EPXUMA1 INFINEON TECHNOLOGIES Infineon-TLD5098EP-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c620b67681811 Category: LED drivers
Description: IC: driver; SMPS controller,LED driver; Litix™; PG-TSDSO-14; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: LED driver; SMPS controller
Technology: Litix™
Case: PG-TSDSO-14
Output current: -550...380mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 4.5...45V DC
Protection: overheating OTP
Produkt ist nicht verfügbar
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IRFB7440PBF IRFB7440PBF INFINEON TECHNOLOGIES IRFB7440PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 208A; 208W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 208A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
auf Bestellung 546 Stücke:
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48+1.5 EUR
70+1.03 EUR
77+0.93 EUR
94+0.77 EUR
100+0.75 EUR
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IRL40SC228 IRL40SC228 INFINEON TECHNOLOGIES infineon-irl40sc228-ds-en.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 557A; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 557A
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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16+4.6 EUR
20+3.72 EUR
22+3.3 EUR
26+2.83 EUR
50+2.59 EUR
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IPD95R450P7ATMA1 IPD95R450P7ATMA1 INFINEON TECHNOLOGIES IPD95R450P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 8.6A; 104W; DPAK; ESD
Case: DPAK
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel
Polarisation: unipolar
Drain-source voltage: 950V
Gate-source voltage: ±20V
Drain current: 8.6A
Gate charge: 35nC
On-state resistance: 0.45Ω
Power dissipation: 104W
Technology: CoolMOS™ P7
auf Bestellung 1320 Stücke:
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31+2.36 EUR
35+2.1 EUR
36+2 EUR
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IPA95R450P7XKSA1 IPA95R450P7XKSA1 INFINEON TECHNOLOGIES IPA95R450P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 8.6A; 30W; TO220FP; ESD
Case: TO220FP
Kind of channel: enhancement
Version: ESD
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 950V
Gate-source voltage: ±20V
Drain current: 8.6A
Gate charge: 35nC
On-state resistance: 0.45Ω
Power dissipation: 30W
Technology: CoolMOS™ P7
auf Bestellung 55 Stücke:
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23+3.15 EUR
29+2.5 EUR
33+2.19 EUR
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IPA80R450P7XKSA1 IPA80R450P7XKSA1 INFINEON TECHNOLOGIES Infineon-IPA80R450P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155d9701ca552be Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 29W; TO220-3
Case: TO220-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Gate charge: 24nC
On-state resistance: 0.45Ω
Power dissipation: 29W
auf Bestellung 85 Stücke:
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29+2.5 EUR
49+1.47 EUR
55+1.3 EUR
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IPP80R450P7XKSA1 IPP80R450P7XKSA1 INFINEON TECHNOLOGIES Infineon-IPP80R450P7-DS-v02_00-EN.pdf?fileId=5546d46255dd933d0155e459bf0619fd Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.1A; Idm: 29A; 73W; ESD
Case: PG-TO220-3
Kind of channel: enhancement
Version: ESD
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Gate-source voltage: ±20V
Drain current: 7.1A
On-state resistance: 0.45Ω
Power dissipation: 73W
Pulsed drain current: 29A
Technology: CoolMOS™ P7
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28+2.57 EUR
29+2.46 EUR
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IPAN70R450P7SXKSA1 IPAN70R450P7SXKSA1 INFINEON TECHNOLOGIES IPAN70R450P7S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 6.5A; 22.7W; TO220FP; ESD
Case: TO220FP
Kind of channel: enhancement
Version: ESD
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 700V
Gate-source voltage: ±16V
Drain current: 6.5A
Gate charge: 13.1nC
On-state resistance: 0.45Ω
Power dissipation: 22.7W
Technology: CoolMOS™ P7
auf Bestellung 181 Stücke:
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63+1.14 EUR
73+0.99 EUR
82+0.87 EUR
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IPA60R450E6XKSA1 IPA60R450E6XKSA1 INFINEON TECHNOLOGIES IPA60R450E6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.2A; 30W; TO220FP
Case: TO220FP
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 600V
Gate-source voltage: ±20V
Drain current: 9.2A
On-state resistance: 0.45Ω
Power dissipation: 30W
Technology: CoolMOS™ E6
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IPD80R450P7ATMA1 IPD80R450P7ATMA1 INFINEON TECHNOLOGIES IPD80R450P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.1A; 73W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.1A
Power dissipation: 73W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: SMD
Gate charge: 24nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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TLE7257SJXUMA1 TLE7257SJXUMA1 INFINEON TECHNOLOGIES TLE7257.pdf Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-DSO-8
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5.5...18V DC
Interface: LIN
Mounting: SMD
Case: PG-DSO-8
Number of receivers: 1
Operating temperature: -40...150°C
DC supply current: 3mA
Kind of package: reel; tape
Number of transmitters: 1
Produkt ist nicht verfügbar
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IRF7420TRPBF IRF7420TRPBF INFINEON TECHNOLOGIES irf7420pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -11.5A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -11.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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XMC4104F64F64ABXQMA1 XMC4104F64F64ABXQMA1 INFINEON TECHNOLOGIES XMC4100-4200-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Case: PG-LQFP-64
Family: XMC4100
Type of integrated circuit: ARM microcontroller
Kind of core: 32-bit
Memory: 20kB SRAM; 64kB FLASH
Number of A/D channels: 9
Number of inputs/outputs: 35
Kind of architecture: Cortex M4
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
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XMC4108F64K64ABXQMA1 XMC4108F64K64ABXQMA1 INFINEON TECHNOLOGIES XMC4100-4200-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC
Interface: CAN; GPIO; I2C; I2S; LIN; SPI; UART; USB
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Case: PG-LQFP-64
Family: XMC4100
Type of integrated circuit: ARM microcontroller
Kind of core: 32-bit
Memory: 20kB SRAM; 64kB FLASH
Number of A/D channels: 8
Number of inputs/outputs: 21
Kind of architecture: Cortex M4
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
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XMC4104F64K64ABXQSA1 XMC4104F64K64ABXQSA1 INFINEON TECHNOLOGIES XMC4100-4200-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Case: PG-LQFP-64
Family: XMC4100
Type of integrated circuit: ARM microcontroller
Kind of core: 32-bit
Memory: 20kB SRAM; 64kB FLASH
Number of A/D channels: 9
Number of inputs/outputs: 35
Kind of architecture: Cortex M4
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
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XMC4400F64K512ABXQSA1 XMC4400F64K512ABXQSA1 INFINEON TECHNOLOGIES XMC4400-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,512kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4400
Case: PG-LQFP-64
Operating temperature: -40...125°C
Number of A/D channels: 9
Number of inputs/outputs: 31
Number of 16bit timers: 26
Memory: 80kB SRAM; 512kB FLASH
Kind of core: 32-bit
Type of integrated circuit: ARM microcontroller
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IRS2108PBF IRS2108PBF INFINEON TECHNOLOGIES irs2108.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
Produkt ist nicht verfügbar
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IRS21094SPBF IRS21094SPBF INFINEON TECHNOLOGIES irs2109.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 850ns
Turn-off time: 235ns
Produkt ist nicht verfügbar
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BCR555E6327HTSA1 BCR555E6327HTSA1 INFINEON TECHNOLOGIES bcr555.pdf?folderId=db3a30431428a3730114407566730303&fileId=db3a30431428a37301144081dc82030c Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
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BCR555E6433HTMA1 BCR555E6433HTMA1 INFINEON TECHNOLOGIES bcr555.pdf?folderId=db3a30431428a3730114407566730303&fileId=db3a30431428a37301144081dc82030c Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
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BCR505E6327 BCR505E6327 INFINEON TECHNOLOGIES BCR505.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
auf Bestellung 1697 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.26 EUR
343+0.21 EUR
394+0.18 EUR
700+0.1 EUR
841+0.085 EUR
939+0.076 EUR
1011+0.071 EUR
Mindestbestellmenge: 278
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TT122N22KOFHPSA2 TT122N22KOFHPSA2 INFINEON TECHNOLOGIES TT122N22KOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 122A; BG-PB34-1; screw
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Semiconductor structure: double series
Type of semiconductor module: thyristor
Gate current: 200mA
Max. forward voltage: 1.95V
Load current: 122A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 3.3kA
Case: BG-PB34-1
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IGW60T120 IGW60T120 INFINEON TECHNOLOGIES IGW60T120-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 60A; 375W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 60A
Power dissipation: 375W
Collector-emitter voltage: 1.2kV
Mounting: THT
Produkt ist nicht verfügbar
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IGW60T120FKSA1 INFINEON TECHNOLOGIES IGW60T120_Rev2_4G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b428250e3d74 Category: THT IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
auf Bestellung 180 Stücke:
Lieferzeit 14-21 Tag (e)
118+4.93 EUR
Mindestbestellmenge: 118
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IRF7805TRPBF IRF7805TRPBF INFINEON TECHNOLOGIES irf7805pbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; 2.5W; SO8
Case: SO8
Mounting: SMD
Kind of package: reel
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 2.5W
Gate-source voltage: ±12V
Drain current: 13A
Drain-source voltage: 30V
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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TT250N18KOFHPSA1 TT250N18KOFHPSA1 INFINEON TECHNOLOGIES TT250N18KOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 250A; BG-PB50-1; Ifsm: 7kA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 250A
Case: BG-PB50-1
Max. forward voltage: 1.5V
Max. forward impulse current: 7kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
auf Bestellung 2 Stücke:
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1+250.25 EUR
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IPG20N06S4L26ATMA1 INFINEON TECHNOLOGIES Infineon-IPG20N06S4L_26-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf68dd216c28&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 33W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 33W
Case: PG-TDSON-8
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 20nC
Kind of channel: enhancement
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IPP020N06NAKSA1 IPP020N06NAKSA1 INFINEON TECHNOLOGIES IPP020N06NAKSA1-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 136W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPI020N06NAKSA1 IPI020N06NAKSA1 INFINEON TECHNOLOGIES IPI020N06N-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 214W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 214W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPG20N10S4L35ATMA1 INFINEON TECHNOLOGIES Infineon-IPG20N10S4L_35-DS-v01_01-en.pdf?fileId=db3a3043372d5cc8013750d7337e05fd Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 100V; 17A; Idm: 80A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Pulsed drain current: 80A
Power dissipation: 43W
Case: PG-TDSON-8-4
Gate-source voltage: ±16V
On-state resistance: 35mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ T2
Produkt ist nicht verfügbar
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IPT020N10N3ATMA1 IPT020N10N3ATMA1 INFINEON TECHNOLOGIES IPT020N10N3-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 212A; Idm: 1200A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 212A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 156nC
Kind of package: tape
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPB020N10N5ATMA1 IPB020N10N5ATMA1 INFINEON TECHNOLOGIES IPB020N10N5-dte.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IPB020N10N5LF IPB020N10N5LF INFINEON TECHNOLOGIES IPB020N10N5LF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 313W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 313W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IPT020N10N5ATMA1 INFINEON TECHNOLOGIES infineon-ipt020n10n5-datasheet-en.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 260A; 273W; HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 260A
Power dissipation: 273W
Case: HSOF-8
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 122nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CY7C1470V25-200AXC INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C
Case: TQFP100
Mounting: SMD
Kind of package: in-tray
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: 0...70°C
Supply voltage: 2.5V DC
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Frequency: 200MHz
Kind of interface: parallel
Produkt ist nicht verfügbar
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IPP020N08N5AKSA1 IPP020N08N5AKSA1 INFINEON TECHNOLOGIES IPP020N08N5-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Kind of channel: enhancement
Technology: OptiMOS™ 5
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 2mΩ
Gate-source voltage: ±20V
Power dissipation: 375W
Drain-source voltage: 80V
Drain current: 120A
Kind of package: tube
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.45 EUR
13+5.81 EUR
15+5.09 EUR
Mindestbestellmenge: 12
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IAUZ20N08S5L300ATMA1 INFINEON TECHNOLOGIES Infineon-IAUZ20N08S5L300-DataSheet-v01_00-EN.pdf?fileId=5546d4626f1cf1c5016f1e6316a2012e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 14A; Idm: 80A; 30W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 14A
Pulsed drain current: 80A
Power dissipation: 30W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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2EDL23N06PJXUMA1 2EDL23N06PJXUMA1 INFINEON TECHNOLOGIES 2EDL23x06xx.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; EiceDRIVER™; PG-DSO-14; -2.5÷1.8A
Technology: EiceDRIVER™
Case: PG-DSO-14
Mounting: SMD
Kind of package: reel; tape
Topology: MOSFET half-bridge
Integrated circuit features: integrated bootstrap functionality
Output current: -2.5...1.8A
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Number of channels: 2
Supply voltage: 10...20V
Type of integrated circuit: driver
Voltage class: 600V
Produkt ist nicht verfügbar
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IRL530NSTRLPBF IRL530NSTRLPBF INFINEON TECHNOLOGIES irl530nspbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Power dissipation: 3.8W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
auf Bestellung 3695 Stücke:
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38+1.89 EUR
55+1.31 EUR
73+0.98 EUR
100+0.85 EUR
250+0.67 EUR
500+0.53 EUR
Mindestbestellmenge: 38
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BAT60BE6327HTSA1 BAT60BE6327HTSA1 INFINEON TECHNOLOGIES BAT60BE6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 10V; 3A; 1.35W
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 10V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 5A
Power dissipation: 1.35W
auf Bestellung 1261 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
281+0.25 EUR
388+0.18 EUR
443+0.16 EUR
589+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 209
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IPD35N10S3L26ATMA1 INFINEON TECHNOLOGIES Infineon-IPP_B_I70N10S3L_12-DS-01_02-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a9085629c594b&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 25A; Idm: 140A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T
Pulsed drain current: 140A
Produkt ist nicht verfügbar
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IPB35N10S3L26ATMA1 INFINEON TECHNOLOGIES Infineon-IPB35N10S3L_26-DS-v01_01-en.pdf?fileId=db3a304330046413013008a994583e77 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+1.33 EUR
Mindestbestellmenge: 1000
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IAUC100N08S5N031ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N08S5N031-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a54445630016 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 167W
Case: PG-TDSON-8
On-state resistance: 3.1mΩ
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
Drain current: 100A
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Power dissipation: 167W
Pulsed drain current: 400A
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
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IAUC100N08S5N034ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N08S5N034-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd41bf1020e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 400A; 136W
Case: PG-TDSON-8
On-state resistance: 4.8mΩ
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
Drain current: 22A
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Power dissipation: 136W
Pulsed drain current: 400A
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Polarisation: unipolar
Gate charge: 66nC
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IAUC100N08S5N043ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N08S5N043-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a528eb6b0010 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 76A; Idm: 400A; 120W
Case: PG-TDSON-8
On-state resistance: 4.3mΩ
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
Drain current: 76A
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Power dissipation: 120W
Pulsed drain current: 400A
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
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CY62256NLL-70SNXCT CY62256NLL-70SNXCT INFINEON TECHNOLOGIES CY62256N.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 4.5÷5.5V; 70ns; SO28; 0÷70°C
Kind of package: reel; tape
Operating temperature: 0...70°C
Mounting: SMD
Case: SO28
Type of integrated circuit: SRAM memory
Access time: 70ns
Operating voltage: 4.5...5.5V
Kind of memory: SRAM
Memory organisation: 32kx8bit
Memory: 256kb SRAM
Kind of interface: parallel
Produkt ist nicht verfügbar
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IPAN70R750P7SXKSA1 IPAN70R750P7SXKSA1 INFINEON TECHNOLOGIES IPAN70R750P7S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; 20.8W; TO220FP; ESD
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Gate charge: 8.3nC
On-state resistance: 0.75Ω
Gate-source voltage: ±16V
Power dissipation: 20.8W
Technology: CoolMOS™ P7
auf Bestellung 165 Stücke:
Lieferzeit 14-21 Tag (e)
117+0.61 EUR
132+0.54 EUR
141+0.51 EUR
148+0.48 EUR
Mindestbestellmenge: 117
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IPU95R750P7AKMA1 IPU95R750P7AKMA1 INFINEON TECHNOLOGIES IPU95R750P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 73W; IPAK; ESD
Case: IPAK
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 5.5A
Gate charge: 23nC
On-state resistance: 0.75Ω
Gate-source voltage: ±20V
Power dissipation: 73W
Technology: CoolMOS™ P7
auf Bestellung 147 Stücke:
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36+1.99 EUR
49+1.47 EUR
54+1.33 EUR
61+1.19 EUR
65+1.12 EUR
Mindestbestellmenge: 36
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BSZ100N03MSGATMA1 BSZ100N03MSGATMA1 INFINEON TECHNOLOGIES BSZ100N03MSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; 30W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 39A
Power dissipation: 30W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSZ100N03LSGATMA1 BSZ100N03LSGATMA1 INFINEON TECHNOLOGIES BSZ100N03LSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 30W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 36A
Power dissipation: 30W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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XMC4104Q48K64ABXUMA1 XMC4104Q48K64ABXUMA1 INFINEON TECHNOLOGIES XMC4100-4200-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,64kBFLASH; 3.3VDC
Interface: GPIO; I2C; I2S; LIN; SPI; UART
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Case: PG-VQFN-48
Family: XMC4100
Type of integrated circuit: ARM microcontroller
Kind of core: 32-bit
Memory: 20kB SRAM; 64kB FLASH
Number of A/D channels: 8
Number of inputs/outputs: 21
Kind of architecture: Cortex M4
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
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XMC4504F100F512ACXQMA1 XMC4504F100F512ACXQMA1 INFINEON TECHNOLOGIES XMC4500-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 128kBSRAM,512kBFLASH
Interface: GPIO; I2C; I2S; LIN; SPI; UART
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Case: PG-LQFP-100
Family: XMC4500
Type of integrated circuit: ARM microcontroller
Kind of core: 32-bit
Memory: 128kB SRAM; 512kB FLASH
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of architecture: Cortex M4
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
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XMC4504F100K512ACXQMA1 XMC4504F100K512ACXQMA1 INFINEON TECHNOLOGIES XMC4500-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 128kBSRAM,512kBFLASH
Interface: GPIO; I2C; I2S; LIN; SPI; UART
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Case: PG-LQFP-100
Family: XMC4500
Type of integrated circuit: ARM microcontroller
Kind of core: 32-bit
Memory: 128kB SRAM; 512kB FLASH
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of architecture: Cortex M4
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Produkt ist nicht verfügbar
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IDB30E60ATMA1 IDB30E60ATMA1.pdf
IDB30E60ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; TO263-3; Ufmax: 2V
Mounting: SMD
Max. forward voltage: 2V
Load current: 30A
Max. off-state voltage: 0.6kV
Case: TO263-3
Features of semiconductor devices: fast switching
Type of diode: rectifying
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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S25FL128SAGNFI000 001-98283%20Rev%20T.pdf
S25FL128SAGNFI000
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; SPI; 133MHz; 2.7÷3.6V; WSON8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
auf Bestellung 279 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.69 EUR
Mindestbestellmenge: 16
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S25FL128SAGNFI001 001-98283%20Rev%20T.pdf
S25FL128SAGNFI001
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; SPI; 133MHz; 2.7÷3.6V; WSON8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
auf Bestellung 131 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5.11 EUR
Mindestbestellmenge: 15
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S25FL128SAGNFI011 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL128SAGNFI011
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; SPI; 133MHz; 2.7÷3.6V; WSON8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
auf Bestellung 54 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.59 EUR
15+5.05 EUR
Mindestbestellmenge: 13
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S25FL128SAGNFV001 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL128SAGNFV001
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: tube
auf Bestellung 66 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.7 EUR
Mindestbestellmenge: 27
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BAT5404E6327HTSA1 BAT5404E6327HTSA1.pdf
BAT5404E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 230mW
Type of diode: Schottky switching
Mounting: SMD
Load current: 0.2A
Power dissipation: 0.23W
Max. forward impulse current: 0.6A
Max. forward voltage: 0.8V
Max. off-state voltage: 30V
Case: SOT23
Semiconductor structure: double series
auf Bestellung 475 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
329+0.22 EUR
374+0.19 EUR
475+0.16 EUR
Mindestbestellmenge: 250
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TLD5097EPXUMA1 Infineon-TLD5097EP-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c620b58a1180e
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; SMPS controller,LED driver; Litix™; PG-TSDSO-14; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: LED driver; SMPS controller
Technology: Litix™
Case: PG-TSDSO-14
Output current: -550...380mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 4.5...45V DC
Protection: overheating OTP
Produkt ist nicht verfügbar
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TLD5098EPXUMA1 Infineon-TLD5098EP-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c620b67681811
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; SMPS controller,LED driver; Litix™; PG-TSDSO-14; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: LED driver; SMPS controller
Technology: Litix™
Case: PG-TSDSO-14
Output current: -550...380mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 4.5...45V DC
Protection: overheating OTP
Produkt ist nicht verfügbar
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IRFB7440PBF IRFB7440PBF.pdf
IRFB7440PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 208A; 208W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 208A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
auf Bestellung 546 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
48+1.5 EUR
70+1.03 EUR
77+0.93 EUR
94+0.77 EUR
100+0.75 EUR
Mindestbestellmenge: 48
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IRL40SC228 infineon-irl40sc228-ds-en.pdf
IRL40SC228
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 557A; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 557A
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 296 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.6 EUR
20+3.72 EUR
22+3.3 EUR
26+2.83 EUR
50+2.59 EUR
Mindestbestellmenge: 16
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IPD95R450P7ATMA1 IPD95R450P7.pdf
IPD95R450P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 8.6A; 104W; DPAK; ESD
Case: DPAK
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel
Polarisation: unipolar
Drain-source voltage: 950V
Gate-source voltage: ±20V
Drain current: 8.6A
Gate charge: 35nC
On-state resistance: 0.45Ω
Power dissipation: 104W
Technology: CoolMOS™ P7
auf Bestellung 1320 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.36 EUR
35+2.1 EUR
36+2 EUR
Mindestbestellmenge: 31
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IPA95R450P7XKSA1 IPA95R450P7.pdf
IPA95R450P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 8.6A; 30W; TO220FP; ESD
Case: TO220FP
Kind of channel: enhancement
Version: ESD
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 950V
Gate-source voltage: ±20V
Drain current: 8.6A
Gate charge: 35nC
On-state resistance: 0.45Ω
Power dissipation: 30W
Technology: CoolMOS™ P7
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.15 EUR
29+2.5 EUR
33+2.19 EUR
Mindestbestellmenge: 23
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IPA80R450P7XKSA1 Infineon-IPA80R450P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155d9701ca552be
IPA80R450P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 29W; TO220-3
Case: TO220-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Gate charge: 24nC
On-state resistance: 0.45Ω
Power dissipation: 29W
auf Bestellung 85 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.5 EUR
49+1.47 EUR
55+1.3 EUR
Mindestbestellmenge: 29
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IPP80R450P7XKSA1 Infineon-IPP80R450P7-DS-v02_00-EN.pdf?fileId=5546d46255dd933d0155e459bf0619fd
IPP80R450P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.1A; Idm: 29A; 73W; ESD
Case: PG-TO220-3
Kind of channel: enhancement
Version: ESD
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Gate-source voltage: ±20V
Drain current: 7.1A
On-state resistance: 0.45Ω
Power dissipation: 73W
Pulsed drain current: 29A
Technology: CoolMOS™ P7
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.57 EUR
29+2.46 EUR
Mindestbestellmenge: 28
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IPAN70R450P7SXKSA1 IPAN70R450P7S.pdf
IPAN70R450P7SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 6.5A; 22.7W; TO220FP; ESD
Case: TO220FP
Kind of channel: enhancement
Version: ESD
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 700V
Gate-source voltage: ±16V
Drain current: 6.5A
Gate charge: 13.1nC
On-state resistance: 0.45Ω
Power dissipation: 22.7W
Technology: CoolMOS™ P7
auf Bestellung 181 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
63+1.14 EUR
73+0.99 EUR
82+0.87 EUR
Mindestbestellmenge: 63
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IPA60R450E6XKSA1 IPA60R450E6-DTE.pdf
IPA60R450E6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.2A; 30W; TO220FP
Case: TO220FP
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 600V
Gate-source voltage: ±20V
Drain current: 9.2A
On-state resistance: 0.45Ω
Power dissipation: 30W
Technology: CoolMOS™ E6
Produkt ist nicht verfügbar
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IPD80R450P7ATMA1 IPD80R450P7.pdf
IPD80R450P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.1A; 73W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.1A
Power dissipation: 73W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: SMD
Gate charge: 24nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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TLE7257SJXUMA1 TLE7257.pdf
TLE7257SJXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-DSO-8
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 5.5...18V DC
Interface: LIN
Mounting: SMD
Case: PG-DSO-8
Number of receivers: 1
Operating temperature: -40...150°C
DC supply current: 3mA
Kind of package: reel; tape
Number of transmitters: 1
Produkt ist nicht verfügbar
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IRF7420TRPBF irf7420pbf.pdf
IRF7420TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -11.5A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -11.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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XMC4104F64F64ABXQMA1 XMC4100-4200-DTE.pdf
XMC4104F64F64ABXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Case: PG-LQFP-64
Family: XMC4100
Type of integrated circuit: ARM microcontroller
Kind of core: 32-bit
Memory: 20kB SRAM; 64kB FLASH
Number of A/D channels: 9
Number of inputs/outputs: 35
Kind of architecture: Cortex M4
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Produkt ist nicht verfügbar
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XMC4108F64K64ABXQMA1 XMC4100-4200-DTE.pdf
XMC4108F64K64ABXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC
Interface: CAN; GPIO; I2C; I2S; LIN; SPI; UART; USB
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Case: PG-LQFP-64
Family: XMC4100
Type of integrated circuit: ARM microcontroller
Kind of core: 32-bit
Memory: 20kB SRAM; 64kB FLASH
Number of A/D channels: 8
Number of inputs/outputs: 21
Kind of architecture: Cortex M4
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Produkt ist nicht verfügbar
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XMC4104F64K64ABXQSA1 XMC4100-4200-DTE.pdf
XMC4104F64K64ABXQSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 20kBSRAM,64kBFLASH; 3.3VDC
Interface: GPIO; I2C; I2S; LIN; SPI; UART; USB
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Case: PG-LQFP-64
Family: XMC4100
Type of integrated circuit: ARM microcontroller
Kind of core: 32-bit
Memory: 20kB SRAM; 64kB FLASH
Number of A/D channels: 9
Number of inputs/outputs: 35
Kind of architecture: Cortex M4
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Produkt ist nicht verfügbar
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XMC4400F64K512ABXQSA1 XMC4400-DTE.pdf
XMC4400F64K512ABXQSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 80kBSRAM,512kBFLASH; 3.3VDC
Supply voltage: 3.3V DC
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4400
Case: PG-LQFP-64
Operating temperature: -40...125°C
Number of A/D channels: 9
Number of inputs/outputs: 31
Number of 16bit timers: 26
Memory: 80kB SRAM; 512kB FLASH
Kind of core: 32-bit
Type of integrated circuit: ARM microcontroller
Produkt ist nicht verfügbar
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IRS2108PBF irs2108.pdf
IRS2108PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
Produkt ist nicht verfügbar
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IRS21094SPBF irs2109.pdf
IRS21094SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 850ns
Turn-off time: 235ns
Produkt ist nicht verfügbar
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BCR555E6327HTSA1 bcr555.pdf?folderId=db3a30431428a3730114407566730303&fileId=db3a30431428a37301144081dc82030c
BCR555E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
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BCR555E6433HTMA1 bcr555.pdf?folderId=db3a30431428a3730114407566730303&fileId=db3a30431428a37301144081dc82030c
BCR555E6433HTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
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BCR505E6327 BCR505.pdf
BCR505E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
auf Bestellung 1697 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
343+0.21 EUR
394+0.18 EUR
700+0.1 EUR
841+0.085 EUR
939+0.076 EUR
1011+0.071 EUR
Mindestbestellmenge: 278
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TT122N22KOFHPSA2 TT122N22KOF.pdf
TT122N22KOFHPSA2
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 122A; BG-PB34-1; screw
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Semiconductor structure: double series
Type of semiconductor module: thyristor
Gate current: 200mA
Max. forward voltage: 1.95V
Load current: 122A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 3.3kA
Case: BG-PB34-1
Produkt ist nicht verfügbar
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IGW60T120 IGW60T120-DTE.pdf
IGW60T120
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 60A; 375W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 60A
Power dissipation: 375W
Collector-emitter voltage: 1.2kV
Mounting: THT
Produkt ist nicht verfügbar
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IGW60T120FKSA1 IGW60T120_Rev2_4G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b428250e3d74
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
auf Bestellung 180 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
118+4.93 EUR
Mindestbestellmenge: 118
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IRF7805TRPBF description irf7805pbf.pdf
IRF7805TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; 2.5W; SO8
Case: SO8
Mounting: SMD
Kind of package: reel
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 2.5W
Gate-source voltage: ±12V
Drain current: 13A
Drain-source voltage: 30V
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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TT250N18KOFHPSA1 TT250N18KOF.pdf
TT250N18KOFHPSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 250A; BG-PB50-1; Ifsm: 7kA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 250A
Case: BG-PB50-1
Max. forward voltage: 1.5V
Max. forward impulse current: 7kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+250.25 EUR
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IPG20N06S4L26ATMA1 Infineon-IPG20N06S4L_26-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf68dd216c28&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 33W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 33W
Case: PG-TDSON-8
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 20nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP020N06NAKSA1 IPP020N06NAKSA1-DTE.pdf
IPP020N06NAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 136W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 136W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPI020N06NAKSA1 IPI020N06N-DTE.pdf
IPI020N06NAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 214W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 214W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPG20N10S4L35ATMA1 Infineon-IPG20N10S4L_35-DS-v01_01-en.pdf?fileId=db3a3043372d5cc8013750d7337e05fd
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 100V; 17A; Idm: 80A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Pulsed drain current: 80A
Power dissipation: 43W
Case: PG-TDSON-8-4
Gate-source voltage: ±16V
On-state resistance: 35mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ T2
Produkt ist nicht verfügbar
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IPT020N10N3ATMA1 IPT020N10N3-DTE.pdf
IPT020N10N3ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 212A; Idm: 1200A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 212A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 156nC
Kind of package: tape
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPB020N10N5ATMA1 IPB020N10N5-dte.pdf
IPB020N10N5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IPB020N10N5LF IPB020N10N5LF.pdf
IPB020N10N5LF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 313W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 313W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IPT020N10N5ATMA1 infineon-ipt020n10n5-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 260A; 273W; HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 260A
Power dissipation: 273W
Case: HSOF-8
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 122nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CY7C1470V25-200AXC download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C
Case: TQFP100
Mounting: SMD
Kind of package: in-tray
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: 0...70°C
Supply voltage: 2.5V DC
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Frequency: 200MHz
Kind of interface: parallel
Produkt ist nicht verfügbar
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IPP020N08N5AKSA1 IPP020N08N5-DTE.pdf
IPP020N08N5AKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Kind of channel: enhancement
Technology: OptiMOS™ 5
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 2mΩ
Gate-source voltage: ±20V
Power dissipation: 375W
Drain-source voltage: 80V
Drain current: 120A
Kind of package: tube
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.45 EUR
13+5.81 EUR
15+5.09 EUR
Mindestbestellmenge: 12
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IAUZ20N08S5L300ATMA1 Infineon-IAUZ20N08S5L300-DataSheet-v01_00-EN.pdf?fileId=5546d4626f1cf1c5016f1e6316a2012e
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 14A; Idm: 80A; 30W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 14A
Pulsed drain current: 80A
Power dissipation: 30W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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2EDL23N06PJXUMA1 2EDL23x06xx.pdf
2EDL23N06PJXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; EiceDRIVER™; PG-DSO-14; -2.5÷1.8A
Technology: EiceDRIVER™
Case: PG-DSO-14
Mounting: SMD
Kind of package: reel; tape
Topology: MOSFET half-bridge
Integrated circuit features: integrated bootstrap functionality
Output current: -2.5...1.8A
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Number of channels: 2
Supply voltage: 10...20V
Type of integrated circuit: driver
Voltage class: 600V
Produkt ist nicht verfügbar
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IRL530NSTRLPBF irl530nspbf.pdf
IRL530NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Power dissipation: 3.8W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
auf Bestellung 3695 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.89 EUR
55+1.31 EUR
73+0.98 EUR
100+0.85 EUR
250+0.67 EUR
500+0.53 EUR
Mindestbestellmenge: 38
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BAT60BE6327HTSA1 BAT60BE6327HTSA1.pdf
BAT60BE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 10V; 3A; 1.35W
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 10V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 5A
Power dissipation: 1.35W
auf Bestellung 1261 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
281+0.25 EUR
388+0.18 EUR
443+0.16 EUR
589+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 209
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IPD35N10S3L26ATMA1 Infineon-IPP_B_I70N10S3L_12-DS-01_02-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a9085629c594b&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 25A; Idm: 140A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T
Pulsed drain current: 140A
Produkt ist nicht verfügbar
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IPB35N10S3L26ATMA1 Infineon-IPB35N10S3L_26-DS-v01_01-en.pdf?fileId=db3a304330046413013008a994583e77
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+1.33 EUR
Mindestbestellmenge: 1000
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IAUC100N08S5N031ATMA1 Infineon-IAUC100N08S5N031-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a54445630016
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 167W
Case: PG-TDSON-8
On-state resistance: 3.1mΩ
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
Drain current: 100A
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Power dissipation: 167W
Pulsed drain current: 400A
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
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IAUC100N08S5N034ATMA1 Infineon-IAUC100N08S5N034-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd41bf1020e
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 400A; 136W
Case: PG-TDSON-8
On-state resistance: 4.8mΩ
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
Drain current: 22A
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Power dissipation: 136W
Pulsed drain current: 400A
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Polarisation: unipolar
Gate charge: 66nC
Produkt ist nicht verfügbar
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IAUC100N08S5N043ATMA1 Infineon-IAUC100N08S5N043-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a528eb6b0010
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 76A; Idm: 400A; 120W
Case: PG-TDSON-8
On-state resistance: 4.3mΩ
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
Drain current: 76A
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Power dissipation: 120W
Pulsed drain current: 400A
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
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CY62256NLL-70SNXCT CY62256N.pdf
CY62256NLL-70SNXCT
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 4.5÷5.5V; 70ns; SO28; 0÷70°C
Kind of package: reel; tape
Operating temperature: 0...70°C
Mounting: SMD
Case: SO28
Type of integrated circuit: SRAM memory
Access time: 70ns
Operating voltage: 4.5...5.5V
Kind of memory: SRAM
Memory organisation: 32kx8bit
Memory: 256kb SRAM
Kind of interface: parallel
Produkt ist nicht verfügbar
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IPAN70R750P7SXKSA1 IPAN70R750P7S.pdf
IPAN70R750P7SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; 20.8W; TO220FP; ESD
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Gate charge: 8.3nC
On-state resistance: 0.75Ω
Gate-source voltage: ±16V
Power dissipation: 20.8W
Technology: CoolMOS™ P7
auf Bestellung 165 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
117+0.61 EUR
132+0.54 EUR
141+0.51 EUR
148+0.48 EUR
Mindestbestellmenge: 117
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IPU95R750P7AKMA1 IPU95R750P7.pdf
IPU95R750P7AKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 73W; IPAK; ESD
Case: IPAK
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 5.5A
Gate charge: 23nC
On-state resistance: 0.75Ω
Gate-source voltage: ±20V
Power dissipation: 73W
Technology: CoolMOS™ P7
auf Bestellung 147 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+1.99 EUR
49+1.47 EUR
54+1.33 EUR
61+1.19 EUR
65+1.12 EUR
Mindestbestellmenge: 36
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BSZ100N03MSGATMA1 BSZ100N03MSG-DTE.pdf
BSZ100N03MSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; 30W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 39A
Power dissipation: 30W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSZ100N03LSGATMA1 BSZ100N03LSG-DTE.pdf
BSZ100N03LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 30W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 36A
Power dissipation: 30W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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XMC4104Q48K64ABXUMA1 XMC4100-4200-DTE.pdf
XMC4104Q48K64ABXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 20kBSRAM,64kBFLASH; 3.3VDC
Interface: GPIO; I2C; I2S; LIN; SPI; UART
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Case: PG-VQFN-48
Family: XMC4100
Type of integrated circuit: ARM microcontroller
Kind of core: 32-bit
Memory: 20kB SRAM; 64kB FLASH
Number of A/D channels: 8
Number of inputs/outputs: 21
Kind of architecture: Cortex M4
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Produkt ist nicht verfügbar
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XMC4504F100F512ACXQMA1 XMC4500-DTE.pdf
XMC4504F100F512ACXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 128kBSRAM,512kBFLASH
Interface: GPIO; I2C; I2S; LIN; SPI; UART
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Case: PG-LQFP-100
Family: XMC4500
Type of integrated circuit: ARM microcontroller
Kind of core: 32-bit
Memory: 128kB SRAM; 512kB FLASH
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of architecture: Cortex M4
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Produkt ist nicht verfügbar
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XMC4504F100K512ACXQMA1 XMC4500-DTE.pdf
XMC4504F100K512ACXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 128kBSRAM,512kBFLASH
Interface: GPIO; I2C; I2S; LIN; SPI; UART
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Case: PG-LQFP-100
Family: XMC4500
Type of integrated circuit: ARM microcontroller
Kind of core: 32-bit
Memory: 128kB SRAM; 512kB FLASH
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Kind of architecture: Cortex M4
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Produkt ist nicht verfügbar
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