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IPB120N06S402ATMA2 IPB120N06S402ATMA2 INFINEON TECHNOLOGIES IPB120N06S402.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 60V; 120A; 188W
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 188W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 150nC
Kind of channel: enhancement
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IAUC120N06S5L032ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC120N06S5L032-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f468428461b1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 364A; 94W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Pulsed drain current: 364A
Power dissipation: 94W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 51.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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IAUC120N06S5N017ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC120N06S5N017-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f48ce58a61bc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 757A; 167W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Pulsed drain current: 757A
Power dissipation: 167W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 95.9nC
Kind of package: reel; tape
Kind of channel: enhancement
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IAUT165N08S5N029ATMA2 IAUT165N08S5N029ATMA2 INFINEON TECHNOLOGIES IAUT165N08S5N029.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 165A; 167W; PG-HSOF-8
Case: PG-HSOF-8
Gate charge: 31nC
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Drain current: 165A
Power dissipation: 167W
Drain-source voltage: 80V
Kind of channel: enhancement
Technology: OptiMOS™ 5
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
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IRS2106STRPBF INFINEON TECHNOLOGIES INFN-S-A0002363322-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -600...290mA
Turn-off time: 235ns
Turn-on time: 320ns
Power: 625mW
Number of channels: 2
Voltage class: 600V
Supply voltage: 10...20V DC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
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BAT5404WH6327XTSA1 BAT5404WH6327XTSA1 INFINEON TECHNOLOGIES BAT5404E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 230mW
Mounting: SMD
Load current: 0.2A
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
Max. forward voltage: 0.8V
Max. off-state voltage: 30V
Semiconductor structure: double series
Case: SOT323
Type of diode: Schottky switching
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878+0.082 EUR
1112+0.064 EUR
1202+0.059 EUR
1254+0.057 EUR
1309+0.055 EUR
1356+0.053 EUR
3000+0.05 EUR
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BAT5405WH6327XTSA1 BAT5405WH6327XTSA1 INFINEON TECHNOLOGIES BAT5404E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 230mW
Mounting: SMD
Load current: 0.2A
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
Max. forward voltage: 0.8V
Max. off-state voltage: 30V
Semiconductor structure: common cathode; double
Case: SOT323
Type of diode: Schottky switching
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848+0.084 EUR
997+0.072 EUR
1055+0.068 EUR
1139+0.063 EUR
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T560N18TOFXPSA1 INFINEON TECHNOLOGIES T560N.pdf Category: Button thyristors
Description: Thyristor: hockey-puck; 1.8kV; Ifmax: 809A; 559A; Igt: 200mA
Max. off-state voltage: 1.8kV
Load current: 559A
Case: BG-T4814K0-1
Max. forward impulse current: 8kA
Gate current: 200mA
Type of thyristor: hockey-puck
Features of semiconductor devices: phase control thyristor (PCT)
Max. load current: 809A
Kind of package: in-tray
Mounting: Press-Pack
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IPF042N10NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPF042N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f49616ca62b7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 139A; Idm: 556A; 167W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 139A
Case: D2PAK-7
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 57nC
Power dissipation: 167W
Pulsed drain current: 556A
Technology: StrongIRFET™ 2
On-state resistance: 4.25mΩ
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BAS7002VH6327XTSA1 BAS7002VH6327XTSA1 INFINEON TECHNOLOGIES BAS7004E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SC79
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Power dissipation: 0.25W
Max. forward impulse current: 0.1A
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376+0.19 EUR
512+0.14 EUR
583+0.12 EUR
684+0.1 EUR
774+0.092 EUR
1000+0.082 EUR
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IAUS165N08S5N029ATMA1 IAUS165N08S5N029ATMA1 INFINEON TECHNOLOGIES IAUS165N08S5N029.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 165A; Idm: 660A; 167W
Case: PG-HSOG-8
Gate charge: 31nC
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Drain current: 165A
Power dissipation: 167W
Drain-source voltage: 80V
Pulsed drain current: 660A
Kind of channel: enhancement
Technology: OptiMOS™ 5
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
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IRF7769L1TRPBF IRF7769L1TRPBF INFINEON TECHNOLOGIES IRF7769L1TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; 3.3W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Power dissipation: 3.3W
Case: DirectFET
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
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SPP08N80C3 SPP08N80C3 INFINEON TECHNOLOGIES Infineon-SPP08N80C3-DS-v02_91-en.pdf?fileId=db3a30432313ff5e0123a905a6005c8a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 104W
Case: PG-TO220-3
On-state resistance: 0.65Ω
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate-source voltage: ±20V
Technology: CoolMOS™
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27+2.75 EUR
29+2.47 EUR
50+2.33 EUR
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SPI21N50C3XKSA1 INFINEON TECHNOLOGIES SPP_I_A21N50C3_Rev[1].3.0.pdf?folderId=db3a3043163797a6011637e7be4f0060&fileId=db3a3043163797a6011637eeb9340085 Category: THT N channel transistors
Description: Transistor: N-MOSFET; 560V; 21A; 208W; TO262
Type of transistor: N-MOSFET
Drain-source voltage: 560V
Drain current: 21A
Power dissipation: 208W
Case: TO262
Gate-source voltage: 20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 95nC
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IFCM20T65GDXKMA1 IFCM20T65GDXKMA1 INFINEON TECHNOLOGIES IFCM20T65GD.pdf Category: Motor and PWM drivers
Description: IC: driver; IPM,2-phase motor controller; PG-MDIP24; 20A; 60kHz
Type of integrated circuit: driver
Kind of integrated circuit: 2-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™ 5
Case: PG-MDIP24
Output current: 20A
Integrated circuit features: interleaved PFC
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...16.5/0...450V DC
Frequency: 60kHz
Kind of package: tube
Voltage class: 650V
Power dissipation: 52.3W
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BSS138IXTSA1 BSS138IXTSA1 INFINEON TECHNOLOGIES Infineon-BSS138I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a421e00e1d4c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 230mA; 360mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.23A
Power dissipation: 0.36W
Case: SOT23
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of channel: enhancement
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250+0.29 EUR
715+0.1 EUR
923+0.078 EUR
1095+0.065 EUR
1185+0.06 EUR
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IPD50N06S214ATMA2 INFINEON TECHNOLOGIES Infineon-IPD50N06S2_14-DS-v01_01-en.pdf?fileId=db3a304412b407950112b43351315b1a&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 50A; 136W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 50A
Power dissipation: 136W
Case: DPAK; TO252
On-state resistance: 10.8mΩ
Mounting: SMD
Gate charge: 52nC
Kind of channel: enhancement
Application: automotive industry
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DDB2U60N12W1RFB11BPSA1 INFINEON TECHNOLOGIES Infineon-DDB2U60N12W1RF_B11-DataSheet-v02_21-EN.pdf?fileId=5546d4627956d53f0179796012a65183 Category: Unclassified
Description: DDB2U60N12W1RFB11BPSA1
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BSS169H6906XTSA1 INFINEON TECHNOLOGIES INFNS19228-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 170mA; 360mW; SOT23
Case: SOT23
Mounting: SMD
Technology: SIPMOS™
Polarisation: unipolar
Gate charge: 2.8nC
Drain current: 0.17A
Power dissipation: 0.36W
On-state resistance: 2.9Ω
Drain-source voltage: 100V
Application: automotive industry
Type of transistor: N-MOSFET
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IPD30N06S2L23ATMA3 INFINEON TECHNOLOGIES Infineon-IPD30N06S2L_23-DS-v01_00-en.pdf?fileId=db3a304412b407950112b433bafe5d69 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 30A; 100W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 30A
Power dissipation: 100W
Case: DPAK; TO252
On-state resistance: 15.9mΩ
Mounting: SMD
Gate charge: 33nC
Kind of channel: enhancement
Application: automotive industry
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IPD096N08N3GATMA1 INFINEON TECHNOLOGIES Infineon-IPD096N08N3-DS-v02_02-en.pdf?fileId=db3a30431ce5fb52011d1f35150315fe Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 73A; 100W; DPAK,TO252
Gate charge: 35nC
On-state resistance: 7.9mΩ
Power dissipation: 100W
Case: DPAK; TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain current: 73A
Drain-source voltage: 80V
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IRF640NSTRRPBF INFINEON TECHNOLOGIES irf640npbf.pdf?fileId=5546d462533600a4015355e7be9019ee Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 200V; 18A; 150W; D2PAK,TO263AB; 251ns
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 150W
Case: D2PAK; TO263AB
Gate-source voltage: 20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 67nC
Kind of channel: enhancement
Reverse recovery time: 251ns
Technology: HEXFET®
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BTS282ZE3180AATMA2 BTS282ZE3180AATMA2 INFINEON TECHNOLOGIES BTS282Z.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 36A; Ch: 1; N-Channel; SMD; PG-TO263-7-1
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 36A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO263-7-1
On-state resistance: 6.5mΩ
Kind of package: reel; tape
Technology: TEMPFET®
Operating temperature: -40...175°C
Output voltage: 49V
Power dissipation: 300W
Integrated circuit features: internal temperature sensor
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BTS282ZE3230AKSA2 BTS282ZE3230AKSA2 INFINEON TECHNOLOGIES BTS282Z.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 36A; Ch: 1; N-Channel; THT; tube; 300W
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 36A
Number of channels: 1
Kind of output: N-Channel
Mounting: THT
Case: PG-TO220-7-12
On-state resistance: 6.5mΩ
Kind of package: tube
Technology: TEMPFET®
Operating temperature: -40...175°C
Output voltage: 49V
Power dissipation: 300W
Integrated circuit features: internal temperature sensor
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10+7.51 EUR
11+6.65 EUR
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SPB20N60S5ATMA1 INFINEON TECHNOLOGIES SPB20N60S5_Rev.2.3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42ca0ff473e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO263
Mounting: SMD
Kind of channel: enhancement
Gate charge: 21nC
Produkt ist nicht verfügbar
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BSHBSS138NH6433XTMA1 INFINEON TECHNOLOGIES Category: Unclassified
Description: BSHBSS138NH6433XTMA1
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20000+0.043 EUR
Mindestbestellmenge: 20000
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IPD100N04S402ATMA1 INFINEON TECHNOLOGIES Infineon-IPD100N04S4_02-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c8301be5e3f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; DPAK,TO252
Case: DPAK; TO252
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 118nC
On-state resistance: 1.7mΩ
Power dissipation: 150W
Drain-source voltage: 40V
Drain current: 100A
Application: automotive industry
Kind of channel: enhancement
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IRF1310NPBF IRF1310NPBF INFINEON TECHNOLOGIES irf1310n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 160W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 73.3nC
Produkt ist nicht verfügbar
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IRF1310NSTRLPBF INFINEON TECHNOLOGIES irf1310nspbf.pdf?fileId=5546d462533600a4015355dab12918a0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 140A; 160W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Pulsed drain current: 140A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Kind of channel: enhancement
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IKD15N60RC2ATMA1 INFINEON TECHNOLOGIES Infineon-IKD15N60RC2-DataSheet-v02_01-EN.pdf?fileId=5546d4627645f8770176522375194d26 Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 28A; 115.4W; DPAK
Type of transistor: IGBT
Power dissipation: 115.4W
Case: DPAK
Mounting: SMD
Gate charge: 72nC
Collector-emitter voltage: 600V
Collector current: 28A
Pulsed collector current: 45A
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2500+0.68 EUR
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IAUC120N06S5L022ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC120N06S5L022-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8386267f0183b275d5cd0ef1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.97 EUR
Mindestbestellmenge: 5000
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SPB21N50C3ATMA1 INFINEON TECHNOLOGIES SPB21N50C3_Rev.2.3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d07ff47f0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 560V; 21A; 208W; D2PAK-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 560V
Drain current: 21A
Power dissipation: 208W
Case: D2PAK-3
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 10nC
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S25HS02GTDPBHB053 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 133MHz
Memory: 2Gb FLASH
Application: automotive
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
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S25HS02GTDPBHV053 INFINEON TECHNOLOGIES infineon-s25hs02gt-s25hs04gt-s25hl02gt-s25hl04gt-2-gb-ddp4-gb-qdp-semper-flash-with-quad-spi-1-8-v-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ee8d76471ad&utm_source=cypress&utm_medium=referral Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 133MHz
Memory: 2Gb FLASH
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
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S28HS02GTFPBHV050 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Interface: octal
Kind of interface: serial
Operating frequency: 166MHz
Memory: 2Gb FLASH
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
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S28HS02GTFPBHV053 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Interface: octal
Kind of interface: serial
Operating frequency: 166MHz
Memory: 2Gb FLASH
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Produkt ist nicht verfügbar
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IPA50R140CPXKSA1 IPA50R140CPXKSA1 INFINEON TECHNOLOGIES IPA50R140CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 23A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 23A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 29 Stücke:
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14+5.15 EUR
Mindestbestellmenge: 14
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IKW75N65RH5XKSA1 INFINEON TECHNOLOGIES Infineon-IKW75N65RH5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc281ce931ac Category: THT IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
240+6.51 EUR
Mindestbestellmenge: 240
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IKW75N65SS5XKSA1 INFINEON TECHNOLOGIES Infineon-IKW75N65SS5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc2833db31af Category: THT IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
auf Bestellung 480 Stücke:
Lieferzeit 14-21 Tag (e)
240+10.15 EUR
Mindestbestellmenge: 240
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IKZA75N65RH5XKSA1 INFINEON TECHNOLOGIES Infineon-IKZA75N65RH5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc28779431bb Category: THT IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
auf Bestellung 480 Stücke:
Lieferzeit 14-21 Tag (e)
240+7.11 EUR
Mindestbestellmenge: 240
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SPW16N50C3FKSA1 INFINEON TECHNOLOGIES SPW16N50C3_Rev2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d2eca4824 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 560V; 16A; 160W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 560V
Drain current: 16A
Power dissipation: 160W
Case: TO247
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 66nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SPP08N80C3XKSA1 INFINEON TECHNOLOGIES SPP08N80C3_rev2[1].9.pdf?folderId=db3a3043163797a6011638491238009b&fileId=db3a30432313ff5e0123a905a6005c8a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; 104W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 104W
Case: TO220-3
On-state resistance: 0.56Ω
Mounting: THT
Gate charge: 60nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SPP15N60C3XKSA1 INFINEON TECHNOLOGIES Infineon-SPP_I_A15N60C3-DataSheet-v03_03-EN.pdf?fileId=8ac78c8c82ce56640182d5124a105c23 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 156W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 156W
Case: TO220-3
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 63nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ISP16DP10LMXTSA1 INFINEON TECHNOLOGIES Infineon-ISP16DP10LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017be2ca8e0c4a4d Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
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BSS84PH7894XTMA1 INFINEON TECHNOLOGIES Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -170mA; 360mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -170mA
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Gate charge: 1nC
Application: automotive industry
Technology: SIPMOS™
Produkt ist nicht verfügbar
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SPW32N50C3FKSA1 SPW32N50C3FKSA1 INFINEON TECHNOLOGIES SPW32N50C3_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d1edf480e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 560V; 32A; 284W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 560V
Drain current: 32A
Case: TO247-3
On-state resistance: 0.11Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 170nC
Power dissipation: 284W
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.85 EUR
10+7.25 EUR
12+6.46 EUR
Mindestbestellmenge: 9
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IKW75N65EL5XKSA1 INFINEON TECHNOLOGIES Infineon-IKW75N65EL5-DS-v02_01-EN.pdf?fileId=5546d4624b0b249c014b11cd6e4e3acf Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 650V; 80A; 536W; TO247-3
Type of transistor: IGBT
Technology: Trench
Power dissipation: 536W
Case: TO247-3
Mounting: THT
Collector-emitter voltage: 650V
Collector current: 80A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Produkt ist nicht verfügbar
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SMBT2907AE6327HTSA1 SMBT2907AE6327HTSA1 INFINEON TECHNOLOGIES SMBT2907AE6327.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
auf Bestellung 2700 Stücke:
Lieferzeit 14-21 Tag (e)
313+0.23 EUR
428+0.17 EUR
577+0.12 EUR
648+0.11 EUR
814+0.088 EUR
1000+0.081 EUR
Mindestbestellmenge: 313
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IRFP4110PBF IRFP4110PBF INFINEON TECHNOLOGIES irfp4110pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 4.5mΩ
Gate-source voltage: ±20V
Gate charge: 150nC
Technology: HEXFET®
Power dissipation: 370W
Produkt ist nicht verfügbar
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IAUZ40N08S5N100ATMA1 INFINEON TECHNOLOGIES Infineon-IAUZ40N08S5N100-DataSheet-v01_00-EN.pdf?fileId=5546d4626f1cf1c5016f1e6c94a801de Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; Idm: 160A; 68W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 68W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 24.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUA220N08S5N021AUMA1 INFINEON TECHNOLOGIES Infineon-IAUA220N08S5N021-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39cb690b3e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 27A; Idm: 677A; 211W; PG-HSOF-5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 27A
Pulsed drain current: 677A
Power dissipation: 211W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IPP030N10N5AKSA1 IPP030N10N5AKSA1 INFINEON TECHNOLOGIES IPP030N10N5-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
On-state resistance: 3mΩ
Mounting: THT
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: OptiMOS™ 5
Kind of package: tube
Produkt ist nicht verfügbar
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IPP024N06N3GXKSA1 IPP024N06N3GXKSA1 INFINEON TECHNOLOGIES IPP024N06N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.23 EUR
14+5.36 EUR
17+4.3 EUR
Mindestbestellmenge: 12
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IPB024N10N5ATMA1 INFINEON TECHNOLOGIES Infineon-IPB024N10N5-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf0159ef08d94417f4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 250W; TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 250W
Case: TO263-7
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 138nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPI024N06N3GXKSA1 IPI024N06N3GXKSA1 INFINEON TECHNOLOGIES IPI024N06N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IRFL024NTRPBF IRFL024NTRPBF INFINEON TECHNOLOGIES irfl024npbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRFU024NPBFAKLA1 INFINEON TECHNOLOGIES irfr024npbf.pdf?fileId=5546d462533600a40153562cf721203c&redirId=112276 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 45W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 45W
Case: IPAK; TO251
Mounting: THT
Gate charge: 20nC
Produkt ist nicht verfügbar
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IRLML2060TRPBF IRLML2060TRPBF INFINEON TECHNOLOGIES irlml2060pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.2A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.1 EUR
Mindestbestellmenge: 23
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BSP296NH6327XTSA1 BSP296NH6327XTSA1 INFINEON TECHNOLOGIES BSP296NH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.2A; 1.8W; SOT223
Mounting: SMD
Drain current: 1.2A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™
Case: SOT223
On-state resistance: 0.8Ω
Power dissipation: 1.8W
auf Bestellung 540 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
204+0.35 EUR
233+0.31 EUR
248+0.29 EUR
266+0.27 EUR
500+0.26 EUR
Mindestbestellmenge: 173
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BSP295H6327XTSA1 BSP295H6327XTSA1 INFINEON TECHNOLOGIES BSP295H6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.8A; 1.8W; SOT223
Mounting: SMD
Drain current: 1.8A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SIPMOS™
Case: SOT223
On-state resistance: 0.3Ω
Power dissipation: 1.8W
auf Bestellung 336 Stücke:
Lieferzeit 14-21 Tag (e)
62+1.16 EUR
92+0.78 EUR
125+0.57 EUR
143+0.5 EUR
200+0.44 EUR
Mindestbestellmenge: 62
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IPB120N06S402ATMA2 IPB120N06S402.pdf
IPB120N06S402ATMA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 60V; 120A; 188W
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 188W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 150nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUC120N06S5L032ATMA1 Infineon-IAUC120N06S5L032-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f468428461b1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 364A; 94W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Pulsed drain current: 364A
Power dissipation: 94W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 51.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUC120N06S5N017ATMA1 Infineon-IAUC120N06S5N017-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f48ce58a61bc
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 757A; 167W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Pulsed drain current: 757A
Power dissipation: 167W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 95.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUT165N08S5N029ATMA2 IAUT165N08S5N029.pdf
IAUT165N08S5N029ATMA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 165A; 167W; PG-HSOF-8
Case: PG-HSOF-8
Gate charge: 31nC
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Drain current: 165A
Power dissipation: 167W
Drain-source voltage: 80V
Kind of channel: enhancement
Technology: OptiMOS™ 5
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
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IRS2106STRPBF INFN-S-A0002363322-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -600...290mA
Turn-off time: 235ns
Turn-on time: 320ns
Power: 625mW
Number of channels: 2
Voltage class: 600V
Supply voltage: 10...20V DC
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Produkt ist nicht verfügbar
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BAT5404WH6327XTSA1 BAT5404E6327HTSA1.pdf
BAT5404WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 230mW
Mounting: SMD
Load current: 0.2A
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
Max. forward voltage: 0.8V
Max. off-state voltage: 30V
Semiconductor structure: double series
Case: SOT323
Type of diode: Schottky switching
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
715+0.1 EUR
878+0.082 EUR
1112+0.064 EUR
1202+0.059 EUR
1254+0.057 EUR
1309+0.055 EUR
1356+0.053 EUR
3000+0.05 EUR
Mindestbestellmenge: 715
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BAT5405WH6327XTSA1 BAT5404E6327HTSA1.pdf
BAT5405WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 230mW
Mounting: SMD
Load current: 0.2A
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
Max. forward voltage: 0.8V
Max. off-state voltage: 30V
Semiconductor structure: common cathode; double
Case: SOT323
Type of diode: Schottky switching
auf Bestellung 2460 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
848+0.084 EUR
997+0.072 EUR
1055+0.068 EUR
1139+0.063 EUR
Mindestbestellmenge: 625
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T560N18TOFXPSA1 T560N.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.8kV; Ifmax: 809A; 559A; Igt: 200mA
Max. off-state voltage: 1.8kV
Load current: 559A
Case: BG-T4814K0-1
Max. forward impulse current: 8kA
Gate current: 200mA
Type of thyristor: hockey-puck
Features of semiconductor devices: phase control thyristor (PCT)
Max. load current: 809A
Kind of package: in-tray
Mounting: Press-Pack
Produkt ist nicht verfügbar
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IPF042N10NF2SATMA1 Infineon-IPF042N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f49616ca62b7
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 139A; Idm: 556A; 167W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 139A
Case: D2PAK-7
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 57nC
Power dissipation: 167W
Pulsed drain current: 556A
Technology: StrongIRFET™ 2
On-state resistance: 4.25mΩ
Produkt ist nicht verfügbar
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BAS7002VH6327XTSA1 BAS7004E6327HTSA1.pdf
BAS7002VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SC79
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Power dissipation: 0.25W
Max. forward impulse current: 0.1A
auf Bestellung 1056 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
376+0.19 EUR
512+0.14 EUR
583+0.12 EUR
684+0.1 EUR
774+0.092 EUR
1000+0.082 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH
IAUS165N08S5N029ATMA1 IAUS165N08S5N029.pdf
IAUS165N08S5N029ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 165A; Idm: 660A; 167W
Case: PG-HSOG-8
Gate charge: 31nC
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Drain current: 165A
Power dissipation: 167W
Drain-source voltage: 80V
Pulsed drain current: 660A
Kind of channel: enhancement
Technology: OptiMOS™ 5
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7769L1TRPBF IRF7769L1TRPBF.pdf
IRF7769L1TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; 3.3W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Power dissipation: 3.3W
Case: DirectFET
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPP08N80C3 Infineon-SPP08N80C3-DS-v02_91-en.pdf?fileId=db3a30432313ff5e0123a905a6005c8a
SPP08N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 104W
Case: PG-TO220-3
On-state resistance: 0.65Ω
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate-source voltage: ±20V
Technology: CoolMOS™
auf Bestellung 413 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.12 EUR
27+2.75 EUR
29+2.47 EUR
50+2.33 EUR
Mindestbestellmenge: 23
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SPI21N50C3XKSA1 SPP_I_A21N50C3_Rev[1].3.0.pdf?folderId=db3a3043163797a6011637e7be4f0060&fileId=db3a3043163797a6011637eeb9340085
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 560V; 21A; 208W; TO262
Type of transistor: N-MOSFET
Drain-source voltage: 560V
Drain current: 21A
Power dissipation: 208W
Case: TO262
Gate-source voltage: 20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 95nC
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+2.1 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
IFCM20T65GDXKMA1 IFCM20T65GD.pdf
IFCM20T65GDXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IPM,2-phase motor controller; PG-MDIP24; 20A; 60kHz
Type of integrated circuit: driver
Kind of integrated circuit: 2-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™ 5
Case: PG-MDIP24
Output current: 20A
Integrated circuit features: interleaved PFC
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...16.5/0...450V DC
Frequency: 60kHz
Kind of package: tube
Voltage class: 650V
Power dissipation: 52.3W
Produkt ist nicht verfügbar
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BSS138IXTSA1 Infineon-BSS138I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a421e00e1d4c
BSS138IXTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 230mA; 360mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.23A
Power dissipation: 0.36W
Case: SOT23
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of channel: enhancement
auf Bestellung 1850 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
715+0.1 EUR
923+0.078 EUR
1095+0.065 EUR
1185+0.06 EUR
Mindestbestellmenge: 250
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IPD50N06S214ATMA2 Infineon-IPD50N06S2_14-DS-v01_01-en.pdf?fileId=db3a304412b407950112b43351315b1a&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 50A; 136W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 50A
Power dissipation: 136W
Case: DPAK; TO252
On-state resistance: 10.8mΩ
Mounting: SMD
Gate charge: 52nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DDB2U60N12W1RFB11BPSA1 Infineon-DDB2U60N12W1RF_B11-DataSheet-v02_21-EN.pdf?fileId=5546d4627956d53f0179796012a65183
Hersteller: INFINEON TECHNOLOGIES
Category: Unclassified
Description: DDB2U60N12W1RFB11BPSA1
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+133.73 EUR
Mindestbestellmenge: 24
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BSS169H6906XTSA1 INFNS19228-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 170mA; 360mW; SOT23
Case: SOT23
Mounting: SMD
Technology: SIPMOS™
Polarisation: unipolar
Gate charge: 2.8nC
Drain current: 0.17A
Power dissipation: 0.36W
On-state resistance: 2.9Ω
Drain-source voltage: 100V
Application: automotive industry
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD30N06S2L23ATMA3 Infineon-IPD30N06S2L_23-DS-v01_00-en.pdf?fileId=db3a304412b407950112b433bafe5d69
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 30A; 100W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 30A
Power dissipation: 100W
Case: DPAK; TO252
On-state resistance: 15.9mΩ
Mounting: SMD
Gate charge: 33nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD096N08N3GATMA1 Infineon-IPD096N08N3-DS-v02_02-en.pdf?fileId=db3a30431ce5fb52011d1f35150315fe
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 73A; 100W; DPAK,TO252
Gate charge: 35nC
On-state resistance: 7.9mΩ
Power dissipation: 100W
Case: DPAK; TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain current: 73A
Drain-source voltage: 80V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF640NSTRRPBF irf640npbf.pdf?fileId=5546d462533600a4015355e7be9019ee
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 200V; 18A; 150W; D2PAK,TO263AB; 251ns
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 150W
Case: D2PAK; TO263AB
Gate-source voltage: 20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 67nC
Kind of channel: enhancement
Reverse recovery time: 251ns
Technology: HEXFET®
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
800+0.73 EUR
Mindestbestellmenge: 800
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BTS282ZE3180AATMA2 BTS282Z.pdf
BTS282ZE3180AATMA2
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 36A; Ch: 1; N-Channel; SMD; PG-TO263-7-1
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 36A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO263-7-1
On-state resistance: 6.5mΩ
Kind of package: reel; tape
Technology: TEMPFET®
Operating temperature: -40...175°C
Output voltage: 49V
Power dissipation: 300W
Integrated circuit features: internal temperature sensor
auf Bestellung 76 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.44 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
BTS282ZE3230AKSA2 BTS282Z.pdf
BTS282ZE3230AKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 36A; Ch: 1; N-Channel; THT; tube; 300W
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 36A
Number of channels: 1
Kind of output: N-Channel
Mounting: THT
Case: PG-TO220-7-12
On-state resistance: 6.5mΩ
Kind of package: tube
Technology: TEMPFET®
Operating temperature: -40...175°C
Output voltage: 49V
Power dissipation: 300W
Integrated circuit features: internal temperature sensor
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.35 EUR
10+7.51 EUR
11+6.65 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
SPB20N60S5ATMA1 SPB20N60S5_Rev.2.3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42ca0ff473e
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO263
Mounting: SMD
Kind of channel: enhancement
Gate charge: 21nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSHBSS138NH6433XTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Unclassified
Description: BSHBSS138NH6433XTMA1
auf Bestellung 65000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20000+0.043 EUR
Mindestbestellmenge: 20000
Im Einkaufswagen  Stück im Wert von  UAH
IPD100N04S402ATMA1 Infineon-IPD100N04S4_02-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c8301be5e3f
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; DPAK,TO252
Case: DPAK; TO252
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 118nC
On-state resistance: 1.7mΩ
Power dissipation: 150W
Drain-source voltage: 40V
Drain current: 100A
Application: automotive industry
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF1310NPBF irf1310n.pdf
IRF1310NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 160W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 73.3nC
Produkt ist nicht verfügbar
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IRF1310NSTRLPBF irf1310nspbf.pdf?fileId=5546d462533600a4015355dab12918a0
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 140A; 160W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Pulsed drain current: 140A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IKD15N60RC2ATMA1 Infineon-IKD15N60RC2-DataSheet-v02_01-EN.pdf?fileId=5546d4627645f8770176522375194d26
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 28A; 115.4W; DPAK
Type of transistor: IGBT
Power dissipation: 115.4W
Case: DPAK
Mounting: SMD
Gate charge: 72nC
Collector-emitter voltage: 600V
Collector current: 28A
Pulsed collector current: 45A
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.68 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IAUC120N06S5L022ATMA1 Infineon-IAUC120N06S5L022-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8386267f0183b275d5cd0ef1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.97 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
SPB21N50C3ATMA1 SPB21N50C3_Rev.2.3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d07ff47f0
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 560V; 21A; 208W; D2PAK-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 560V
Drain current: 21A
Power dissipation: 208W
Case: D2PAK-3
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 10nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25HS02GTDPBHB053
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 133MHz
Memory: 2Gb FLASH
Application: automotive
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25HS02GTDPBHV053 infineon-s25hs02gt-s25hs04gt-s25hl02gt-s25hl04gt-2-gb-ddp4-gb-qdp-semper-flash-with-quad-spi-1-8-v-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ee8d76471ad&utm_source=cypress&utm_medium=referral
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; QUAD SPI; 133MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 133MHz
Memory: 2Gb FLASH
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Produkt ist nicht verfügbar
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S28HS02GTFPBHV050
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Interface: octal
Kind of interface: serial
Operating frequency: 166MHz
Memory: 2Gb FLASH
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Produkt ist nicht verfügbar
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S28HS02GTFPBHV053
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 2GbFLASH; octal; 166MHz; 1.7÷2V; BGA24; serial
Operating voltage: 1.7...2V
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Interface: octal
Kind of interface: serial
Operating frequency: 166MHz
Memory: 2Gb FLASH
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA50R140CPXKSA1 IPA50R140CP-DTE.pdf
IPA50R140CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 23A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 23A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.15 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IKW75N65RH5XKSA1 Infineon-IKW75N65RH5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc281ce931ac
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
240+6.51 EUR
Mindestbestellmenge: 240
Im Einkaufswagen  Stück im Wert von  UAH
IKW75N65SS5XKSA1 Infineon-IKW75N65SS5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc2833db31af
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
auf Bestellung 480 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
240+10.15 EUR
Mindestbestellmenge: 240
Im Einkaufswagen  Stück im Wert von  UAH
IKZA75N65RH5XKSA1 Infineon-IKZA75N65RH5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc28779431bb
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT
Type of transistor: IGBT
auf Bestellung 480 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
240+7.11 EUR
Mindestbestellmenge: 240
Im Einkaufswagen  Stück im Wert von  UAH
SPW16N50C3FKSA1 SPW16N50C3_Rev2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d2eca4824
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 560V; 16A; 160W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 560V
Drain current: 16A
Power dissipation: 160W
Case: TO247
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 66nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPP08N80C3XKSA1 SPP08N80C3_rev2[1].9.pdf?folderId=db3a3043163797a6011638491238009b&fileId=db3a30432313ff5e0123a905a6005c8a
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; 104W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 104W
Case: TO220-3
On-state resistance: 0.56Ω
Mounting: THT
Gate charge: 60nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SPP15N60C3XKSA1 Infineon-SPP_I_A15N60C3-DataSheet-v03_03-EN.pdf?fileId=8ac78c8c82ce56640182d5124a105c23
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 156W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 156W
Case: TO220-3
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 63nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ISP16DP10LMXTSA1 Infineon-ISP16DP10LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017be2ca8e0c4a4d
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
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BSS84PH7894XTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -170mA; 360mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -170mA
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Gate charge: 1nC
Application: automotive industry
Technology: SIPMOS™
Produkt ist nicht verfügbar
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SPW32N50C3FKSA1 SPW32N50C3_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d1edf480e
SPW32N50C3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 560V; 32A; 284W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 560V
Drain current: 32A
Case: TO247-3
On-state resistance: 0.11Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 170nC
Power dissipation: 284W
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.85 EUR
10+7.25 EUR
12+6.46 EUR
Mindestbestellmenge: 9
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IKW75N65EL5XKSA1 Infineon-IKW75N65EL5-DS-v02_01-EN.pdf?fileId=5546d4624b0b249c014b11cd6e4e3acf
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 650V; 80A; 536W; TO247-3
Type of transistor: IGBT
Technology: Trench
Power dissipation: 536W
Case: TO247-3
Mounting: THT
Collector-emitter voltage: 650V
Collector current: 80A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Produkt ist nicht verfügbar
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SMBT2907AE6327HTSA1 SMBT2907AE6327.pdf
SMBT2907AE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
auf Bestellung 2700 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
428+0.17 EUR
577+0.12 EUR
648+0.11 EUR
814+0.088 EUR
1000+0.081 EUR
Mindestbestellmenge: 313
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IRFP4110PBF irfp4110pbf.pdf
IRFP4110PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 4.5mΩ
Gate-source voltage: ±20V
Gate charge: 150nC
Technology: HEXFET®
Power dissipation: 370W
Produkt ist nicht verfügbar
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IAUZ40N08S5N100ATMA1 Infineon-IAUZ40N08S5N100-DataSheet-v01_00-EN.pdf?fileId=5546d4626f1cf1c5016f1e6c94a801de
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; Idm: 160A; 68W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 68W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 24.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUA220N08S5N021AUMA1 Infineon-IAUA220N08S5N021-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39cb690b3e
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 27A; Idm: 677A; 211W; PG-HSOF-5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 27A
Pulsed drain current: 677A
Power dissipation: 211W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IPP030N10N5AKSA1 IPP030N10N5-DTE.pdf
IPP030N10N5AKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
On-state resistance: 3mΩ
Mounting: THT
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: OptiMOS™ 5
Kind of package: tube
Produkt ist nicht verfügbar
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IPP024N06N3GXKSA1 IPP024N06N3G-DTE.pdf
IPP024N06N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.23 EUR
14+5.36 EUR
17+4.3 EUR
Mindestbestellmenge: 12
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IPB024N10N5ATMA1 Infineon-IPB024N10N5-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf0159ef08d94417f4
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 250W; TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 250W
Case: TO263-7
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 138nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPI024N06N3GXKSA1 IPI024N06N3G-DTE.pdf
IPI024N06N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IRFL024NTRPBF irfl024npbf.pdf
IRFL024NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRFU024NPBFAKLA1 irfr024npbf.pdf?fileId=5546d462533600a40153562cf721203c&redirId=112276
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 45W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 45W
Case: IPAK; TO251
Mounting: THT
Gate charge: 20nC
Produkt ist nicht verfügbar
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IRLML2060TRPBF irlml2060pbf.pdf
IRLML2060TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.2A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.1 EUR
Mindestbestellmenge: 23
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BSP296NH6327XTSA1 BSP296NH6327XTSA1.pdf
BSP296NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.2A; 1.8W; SOT223
Mounting: SMD
Drain current: 1.2A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™
Case: SOT223
On-state resistance: 0.8Ω
Power dissipation: 1.8W
auf Bestellung 540 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
204+0.35 EUR
233+0.31 EUR
248+0.29 EUR
266+0.27 EUR
500+0.26 EUR
Mindestbestellmenge: 173
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BSP295H6327XTSA1 BSP295H6327XTSA1.pdf
BSP295H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.8A; 1.8W; SOT223
Mounting: SMD
Drain current: 1.8A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SIPMOS™
Case: SOT223
On-state resistance: 0.3Ω
Power dissipation: 1.8W
auf Bestellung 336 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
62+1.16 EUR
92+0.78 EUR
125+0.57 EUR
143+0.5 EUR
200+0.44 EUR
Mindestbestellmenge: 62
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