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IKW40N60H3FKSA1 IKW40N60H3FKSA1 INFINEON TECHNOLOGIES IKW40N60H3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 153W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 153W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 223nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 218ns
Features of semiconductor devices: integrated anti-parallel diode
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12+5.96 EUR
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BSS138NH6327XTSA2 BSS138NH6327XTSA2 INFINEON TECHNOLOGIES BSS138NH6327XTSA2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.23A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: enhancement
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BSS138NH6433XTMA1 BSS138NH6433XTMA1 INFINEON TECHNOLOGIES Infineon-BSS138N-DS-v02_86-en.pdf?fileId=db3a304330f68606013104d944d53efb Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 60V; 180mA; Idm: 0.92A
Type of transistor: N-MOSFET
Technology: SIPMOS®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.18A
Pulsed drain current: 0.92A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: enhancement
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IGW40N60H3FKSA1 IGW40N60H3FKSA1 INFINEON TECHNOLOGIES IGW40N60H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 306W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 306W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H3
Technology: TRENCHSTOP™ 3
auf Bestellung 84 Stücke:
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17+4.33 EUR
19+3.78 EUR
21+3.53 EUR
30+3.13 EUR
60+2.93 EUR
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IKFW40N60DH3EXKSA1 IKFW40N60DH3EXKSA1 INFINEON TECHNOLOGIES IKFW40N60DH3E.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 28A; 81W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 81W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 52ns
Turn-off time: 160ns
Collector current: 28A
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IGP15N60TXKSA1 IGP15N60TXKSA1 INFINEON TECHNOLOGIES IGP15N60T-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 23A; 130W; TO220-3
Type of transistor: IGBT
Power dissipation: 130W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Collector current: 23A
Gate-emitter voltage: ±20V
auf Bestellung 244 Stücke:
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37+1.94 EUR
43+1.69 EUR
50+1.46 EUR
68+1.06 EUR
100+1.04 EUR
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IRL540NSTRLPBF IRL540NSTRLPBF INFINEON TECHNOLOGIES irl540nspbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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27+2.66 EUR
42+1.73 EUR
52+1.4 EUR
100+1.24 EUR
250+1.06 EUR
500+0.92 EUR
800+0.86 EUR
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IRFB3206GPBF IRFB3206GPBF INFINEON TECHNOLOGIES irfb3206gpbf.pdf?fileId=5546d462533600a40153561550971df5 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
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IRFB3206PBF IRFB3206PBF INFINEON TECHNOLOGIES irfs3206pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 724 Stücke:
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30+2.4 EUR
40+1.79 EUR
48+1.52 EUR
52+1.39 EUR
100+1.22 EUR
250+1.09 EUR
500+1 EUR
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IRLB8743PBF IRLB8743PBF INFINEON TECHNOLOGIES irlb8743pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 150A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
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76+0.94 EUR
83+0.87 EUR
100+0.81 EUR
500+0.77 EUR
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IKW15N120H3FKSA1 IKW15N120H3FKSA1 INFINEON TECHNOLOGIES IKW15N120H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 217W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 217W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H3
Technology: TRENCHSTOP™ 3
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14+5.13 EUR
17+4.26 EUR
18+4.2 EUR
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IRLML6401TRPBF IRLML6401TRPBF INFINEON TECHNOLOGIES irlml6401.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -4.3A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -4.3A
Power dissipation: 1.3W
Case: SOT23
On-state resistance: 50mΩ
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
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BC847CE6327HTSA1 BC847CE6327HTSA1 INFINEON TECHNOLOGIES bc847_8_9_bc850.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1 Stücke:
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1+71.5 EUR
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IRFB3607PBF IRFB3607PBF INFINEON TECHNOLOGIES irfs3607pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 2851 Stücke:
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43+1.69 EUR
50+1.46 EUR
58+1.24 EUR
107+0.67 EUR
500+0.61 EUR
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BC857CE6327 BC857CE6327 INFINEON TECHNOLOGIES BC857SH6327.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 630 Stücke:
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385+0.19 EUR
527+0.14 EUR
630+0.11 EUR
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BC847BE6433HTMA1 BC847BE6433HTMA1 INFINEON TECHNOLOGIES bc847_8_9_bc850.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 7460 Stücke:
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715+0.1 EUR
817+0.088 EUR
966+0.074 EUR
1058+0.068 EUR
2500+0.059 EUR
5000+0.053 EUR
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FM25CL64B-G FM25CL64B-G INFINEON TECHNOLOGIES FM25CL64B-G.pdf Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; SPI; 8kx8bit; 2.7÷3.65VDC; 20MHz; SO8
Case: SO8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.65V DC
Memory: 64kb FRAM
Clock frequency: 20MHz
Memory organisation: 8kx8bit
Interface: SPI
auf Bestellung 1777 Stücke:
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17+4.35 EUR
21+3.52 EUR
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BAT5406WH6327XTSA1 BAT5406WH6327XTSA1 INFINEON TECHNOLOGIES BAT5404E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 230mW
Mounting: SMD
Load current: 0.2A
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
Max. forward voltage: 0.8V
Max. off-state voltage: 30V
Semiconductor structure: common anode; double
Case: SOT323
Type of diode: Schottky switching
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IR2101PBF IR2101PBF INFINEON TECHNOLOGIES ir2101.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -270...130mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 160ns
Turn-off time: 150ns
auf Bestellung 317 Stücke:
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21+3.42 EUR
28+2.59 EUR
31+2.35 EUR
34+2.12 EUR
50+2.07 EUR
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IR2101STRPBF IR2101STRPBF INFINEON TECHNOLOGIES IR2101SPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 160ns
Turn-off time: 150ns
auf Bestellung 1627 Stücke:
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51+1.42 EUR
69+1.04 EUR
76+0.94 EUR
81+0.89 EUR
100+0.87 EUR
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IRF7401TRPBF IRF7401TRPBF INFINEON TECHNOLOGIES irf7401pbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 8.7A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 8.7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
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IRF7404TRPBF IRF7404TRPBF INFINEON TECHNOLOGIES irf7404pbf.pdf description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.7A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IR2153PBF IR2153PBF INFINEON TECHNOLOGIES ir2153.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Power: 1W
Number of channels: 2
Supply voltage: 10...15.6V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 80ns
Turn-off time: 40ns
auf Bestellung 198 Stücke:
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30+2.39 EUR
41+1.77 EUR
50+1.56 EUR
100+1.49 EUR
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IR2153SPBF IR2153SPBF INFINEON TECHNOLOGIES ir2153.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Power: 625mW
Mounting: SMD
Operating temperature: -40...125°C
Turn-off time: 40ns
Turn-on time: 80ns
Number of channels: 2
Supply voltage: 10...15.6V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Voltage class: 600V
Case: SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Kind of package: tube
auf Bestellung 276 Stücke:
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34+2.13 EUR
46+1.59 EUR
49+1.47 EUR
50+1.44 EUR
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IR2153STRPBF IR2153STRPBF INFINEON TECHNOLOGIES IR2153DPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Power: 625mW
Mounting: SMD
Operating temperature: -40...125°C
Turn-off time: 40ns
Turn-on time: 80ns
Number of channels: 2
Supply voltage: 10...15.6V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Voltage class: 600V
Case: SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Kind of package: reel; tape
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IRFR9024NTRLPBF IRFR9024NTRLPBF INFINEON TECHNOLOGIES irfr9024npbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -11A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRFR9024NTRPBF IRFR9024NTRPBF INFINEON TECHNOLOGIES irfr9024npbf.pdf description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -11A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 3278 Stücke:
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56+1.29 EUR
88+0.82 EUR
133+0.54 EUR
200+0.48 EUR
500+0.42 EUR
1000+0.38 EUR
2000+0.35 EUR
Mindestbestellmenge: 56
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AUIRFR9024NTRL INFINEON TECHNOLOGIES INFN-S-A0002298863-1.pdf?t.download=true&u=5oefqw Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -8A; Idm: -44A; 38W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -8A
Pulsed drain current: -44A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: SMD
Gate charge: 19nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRL3705NPBF IRL3705NPBF INFINEON TECHNOLOGIES irl3705n.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 130W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 89A
Power dissipation: 130W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate-source voltage: ±16V
Gate charge: 65.3nC
On-state resistance: 10mΩ
Produkt ist nicht verfügbar
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IRL3705NSTRLPBF IRL3705NSTRLPBF INFINEON TECHNOLOGIES irl3705nspbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 89A
Power dissipation: 170W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRL3705ZSTRLPBF IRL3705ZSTRLPBF INFINEON TECHNOLOGIES IRL3705ZSTRLPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 86A; 130W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 86A
Power dissipation: 130W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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IRLB3813PBF IRLB3813PBF INFINEON TECHNOLOGIES irlb3813pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 260A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 260A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.95mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRLB4132PBF IRLB4132PBF INFINEON TECHNOLOGIES IRLB4132PbF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 620A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 620A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: THT
Kind of channel: enhancement
auf Bestellung 2019 Stücke:
Lieferzeit 14-21 Tag (e)
46+1.56 EUR
59+1.23 EUR
67+1.08 EUR
91+0.79 EUR
103+0.7 EUR
250+0.6 EUR
500+0.54 EUR
1000+0.5 EUR
Mindestbestellmenge: 46
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IRF7303TRPBF IRF7303TRPBF INFINEON TECHNOLOGIES irf7303pbf.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 4.9A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
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IRF7309TRPBF IRF7309TRPBF INFINEON TECHNOLOGIES irf7309pbf.pdf description Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4/-3A
Power dissipation: 1.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.05/0.1Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 747 Stücke:
Lieferzeit 14-21 Tag (e)
55+1.3 EUR
85+0.85 EUR
132+0.54 EUR
200+0.48 EUR
500+0.45 EUR
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IRLR2905ZTRPBF IRLR2905ZTRPBF INFINEON TECHNOLOGIES IRLR2905ZTRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 43A; Idm: 240A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 43A
Pulsed drain current: 240A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1876 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.44 EUR
65+1.12 EUR
73+0.99 EUR
97+0.74 EUR
109+0.66 EUR
500+0.51 EUR
1000+0.47 EUR
Mindestbestellmenge: 50
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AUIRLR2905ZTRL INFINEON TECHNOLOGIES AUIRLR2905Z.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 42A; Idm: 240A; 110W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 35nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IGW15N120H3FKSA1 IGW15N120H3FKSA1 INFINEON TECHNOLOGIES IGW15N120H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 217W; TO247-3; H3
Mounting: THT
Manufacturer series: H3
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Case: TO247-3
Technology: TRENCHSTOP™ 3
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 217W
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.13 EUR
24+3.09 EUR
27+2.7 EUR
29+2.47 EUR
30+2.43 EUR
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IHW15N120E1XKSA1 IHW15N120E1XKSA1 INFINEON TECHNOLOGIES IHW15N120E1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 15A; 62.2W; TO247-3
Mounting: THT
Pulsed collector current: 45A
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Case: TO247-3
Technology: TRENCHSTOP™ RC
Kind of package: tube
Turn-on time: 1940ns
Gate charge: 90nC
Turn-off time: 1450ns
Collector current: 15A
Gate-emitter voltage: ±20V
Power dissipation: 62.2W
auf Bestellung 46 Stücke:
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26+2.76 EUR
37+1.96 EUR
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IHW15N120R3FKSA1 IHW15N120R3FKSA1 INFINEON TECHNOLOGIES IHW15N120R3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 15A; 127W; TO247-3
Mounting: THT
Pulsed collector current: 45A
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Case: TO247-3
Technology: TRENCHSTOP™ RC
Kind of package: tube
Gate charge: 165nC
Turn-off time: 346ns
Collector current: 15A
Gate-emitter voltage: ±20V
Power dissipation: 127W
auf Bestellung 195 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.93 EUR
25+2.9 EUR
30+2.42 EUR
120+2.23 EUR
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IKW15N120BH6XKSA1 IKW15N120BH6XKSA1 INFINEON TECHNOLOGIES IKW15N120BH6.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 100W; TO247-3
Mounting: THT
Pulsed collector current: 60A
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
Technology: TRENCHSTOP™ 6
Kind of package: tube
Gate charge: 92nC
Collector current: 15A
Gate-emitter voltage: ±20V
Power dissipation: 100W
Produkt ist nicht verfügbar
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IKW15N120T2FKSA1 IKW15N120T2FKSA1 INFINEON TECHNOLOGIES IKW15N120T2_Rev2_1.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b426d2d43acd Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 235W; TO247-3
Mounting: THT
Pulsed collector current: 60A
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
Technology: TRENCHSTOP™ 2
Kind of package: tube
Turn-on time: 57ns
Gate charge: 93nC
Turn-off time: 457ns
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 235W
auf Bestellung 57 Stücke:
Lieferzeit 14-21 Tag (e)
15+5.08 EUR
17+4.3 EUR
Mindestbestellmenge: 15
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IRLML6344TRPBF IRLML6344TRPBF INFINEON TECHNOLOGIES irlml6344pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRLML0060TRPBF IRLML0060TRPBF INFINEON TECHNOLOGIES irlml0060pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.7A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.7A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 14747 Stücke:
Lieferzeit 14-21 Tag (e)
122+0.59 EUR
169+0.42 EUR
248+0.29 EUR
291+0.25 EUR
500+0.17 EUR
1000+0.15 EUR
3000+0.13 EUR
6000+0.12 EUR
9000+0.11 EUR
Mindestbestellmenge: 122
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IGW75N65H5XKSA1 IGW75N65H5XKSA1 INFINEON TECHNOLOGIES IGW75N65H5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 198W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 198W
Case: TO247-3
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Turn-off time: 215ns
Turn-on time: 61ns
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.52 EUR
19+3.95 EUR
20+3.6 EUR
30+3.19 EUR
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IGZ75N65H5XKSA1 IGZ75N65H5XKSA1 INFINEON TECHNOLOGIES IGZ75N65H5XKSA1-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 197W; TO247-4
Type of transistor: IGBT
Power dissipation: 197W
Case: TO247-4
Mounting: THT
Gate charge: 166nC
Kind of package: tube
Turn-off time: 415ns
Turn-on time: 37ns
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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IKW75N65EH5XKSA1 IKW75N65EH5XKSA1 INFINEON TECHNOLOGIES IKW75N65EH5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 198W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 198W
Case: TO247-3
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Turn-off time: 215ns
Turn-on time: 61ns
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H5
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
3+23.84 EUR
Mindestbestellmenge: 3
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IKW75N65ES5XKSA1 IKW75N65ES5XKSA1 INFINEON TECHNOLOGIES IKW75N65ES5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 197W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 197W
Case: TO247-3
Mounting: THT
Gate charge: 164nC
Kind of package: tube
Turn-off time: 185ns
Turn-on time: 86ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 80A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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IKZ75N65EL5XKSA1 IKZ75N65EL5XKSA1 INFINEON TECHNOLOGIES IKZ75N65EL5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; 268W; TO247-4
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 268W
Case: TO247-4
Mounting: THT
Gate charge: 436nC
Kind of package: tube
Turn-off time: 325ns
Turn-on time: 143ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 100A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKZ75N65ES5XKSA1 IKZ75N65ES5XKSA1 INFINEON TECHNOLOGIES IKZ75N65ES5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 197W; TO247-4
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 197W
Case: TO247-4
Mounting: THT
Gate charge: 164nC
Kind of package: tube
Turn-off time: 427ns
Turn-on time: 71ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 80A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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SPW35N60CFD SPW35N60CFD INFINEON TECHNOLOGIES SPW35N60CFD.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21.6A; 313W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21.6A
Power dissipation: 313W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.118Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF540ZPBF IRF540ZPBF INFINEON TECHNOLOGIES irf540z.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 92W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 92W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 26.5mΩ
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1310 Stücke:
Lieferzeit 14-21 Tag (e)
84+0.86 EUR
102+0.7 EUR
114+0.63 EUR
Mindestbestellmenge: 84
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IRF9530NSTRLPBF IRF9530NSTRLPBF INFINEON TECHNOLOGIES irf9530nspbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -14A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -14A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRFL014NTRPBF IRFL014NTRPBF INFINEON TECHNOLOGIES irfl014npbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 1.9A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 1.9A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IGB10N60TATMA1 IGB10N60TATMA1 INFINEON TECHNOLOGIES IGB10N60T-DTE.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 110W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 110W
Case: D2PAK
Gate-emitter voltage: ±20V
Mounting: SMD
Kind of package: tube
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
52+1.4 EUR
76+0.94 EUR
105+0.69 EUR
250+0.64 EUR
Mindestbestellmenge: 52
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IGP10N60TXKSA1 IGP10N60TXKSA1 INFINEON TECHNOLOGIES IGP10N60T-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 18A; 110W; TO220-3
Type of transistor: IGBT
Power dissipation: 110W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Collector current: 18A
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
41+1.74 EUR
44+1.63 EUR
Mindestbestellmenge: 41
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IKA10N60TXKSA1 IKA10N60TXKSA1 INFINEON TECHNOLOGIES IKA10N60T.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 7.2A; 30W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 30W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 67nC
Turn-on time: 20ns
Turn-off time: 250ns
Collector current: 7.2A
Produkt ist nicht verfügbar
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IKB10N60TATMA1 IKB10N60TATMA1 INFINEON TECHNOLOGIES IKB10N60T.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 18A; 110W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 62nC
Turn-on time: 20ns
Turn-off time: 253ns
Collector current: 18A
auf Bestellung 561 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.37 EUR
42+1.73 EUR
48+1.52 EUR
Mindestbestellmenge: 31
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IKD10N60RATMA1 IKD10N60RATMA1 INFINEON TECHNOLOGIES IKD10N60R.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 64nC
Turn-on time: 24ns
Turn-off time: 331ns
Collector current: 10A
Produkt ist nicht verfügbar
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IKD10N60RFATMA1 IKD10N60RFATMA1 INFINEON TECHNOLOGIES IKD10N60RF.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 64nC
Turn-on time: 27ns
Turn-off time: 186ns
Collector current: 10A
Produkt ist nicht verfügbar
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IKW40N60H3FKSA1 IKW40N60H3.pdf
IKW40N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 153W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 153W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 223nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 218ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+5.96 EUR
Mindestbestellmenge: 12
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BSS138NH6327XTSA2 BSS138NH6327XTSA2.pdf
BSS138NH6327XTSA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.23A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSS138NH6433XTMA1 Infineon-BSS138N-DS-v02_86-en.pdf?fileId=db3a304330f68606013104d944d53efb
BSS138NH6433XTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 60V; 180mA; Idm: 0.92A
Type of transistor: N-MOSFET
Technology: SIPMOS®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.18A
Pulsed drain current: 0.92A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IGW40N60H3FKSA1 IGW40N60H3-DTE.pdf
IGW40N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 306W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 306W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H3
Technology: TRENCHSTOP™ 3
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.33 EUR
19+3.78 EUR
21+3.53 EUR
30+3.13 EUR
60+2.93 EUR
Mindestbestellmenge: 17
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IKFW40N60DH3EXKSA1 IKFW40N60DH3E.pdf
IKFW40N60DH3EXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 28A; 81W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 81W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 52ns
Turn-off time: 160ns
Collector current: 28A
Produkt ist nicht verfügbar
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IGP15N60TXKSA1 IGP15N60T-DTE.pdf
IGP15N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 23A; 130W; TO220-3
Type of transistor: IGBT
Power dissipation: 130W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Collector current: 23A
Gate-emitter voltage: ±20V
auf Bestellung 244 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
37+1.94 EUR
43+1.69 EUR
50+1.46 EUR
68+1.06 EUR
100+1.04 EUR
Mindestbestellmenge: 37
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IRL540NSTRLPBF irl540nspbf.pdf
IRL540NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 2058 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.66 EUR
42+1.73 EUR
52+1.4 EUR
100+1.24 EUR
250+1.06 EUR
500+0.92 EUR
800+0.86 EUR
Mindestbestellmenge: 27
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IRFB3206GPBF irfb3206gpbf.pdf?fileId=5546d462533600a40153561550971df5
IRFB3206GPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFB3206PBF irfs3206pbf.pdf
IRFB3206PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 724 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.4 EUR
40+1.79 EUR
48+1.52 EUR
52+1.39 EUR
100+1.22 EUR
250+1.09 EUR
500+1 EUR
Mindestbestellmenge: 30
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IRLB8743PBF irlb8743pbf.pdf
IRLB8743PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 150A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1847 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
66+1.09 EUR
76+0.94 EUR
83+0.87 EUR
100+0.81 EUR
500+0.77 EUR
Mindestbestellmenge: 66
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IKW15N120H3FKSA1 IKW15N120H3-DTE.pdf
IKW15N120H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 217W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 217W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H3
Technology: TRENCHSTOP™ 3
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.13 EUR
17+4.26 EUR
18+4.2 EUR
Mindestbestellmenge: 14
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IRLML6401TRPBF irlml6401.pdf
IRLML6401TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -4.3A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -4.3A
Power dissipation: 1.3W
Case: SOT23
On-state resistance: 50mΩ
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC847CE6327HTSA1 bc847_8_9_bc850.pdf
BC847CE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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IRFB3607PBF irfs3607pbf.pdf
IRFB3607PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 2851 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
43+1.69 EUR
50+1.46 EUR
58+1.24 EUR
107+0.67 EUR
500+0.61 EUR
Mindestbestellmenge: 43
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BC857CE6327 BC857SH6327.pdf
BC857CE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 630 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
527+0.14 EUR
630+0.11 EUR
Mindestbestellmenge: 385
Im Einkaufswagen  Stück im Wert von  UAH
BC847BE6433HTMA1 bc847_8_9_bc850.pdf
BC847BE6433HTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 7460 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
715+0.1 EUR
817+0.088 EUR
966+0.074 EUR
1058+0.068 EUR
2500+0.059 EUR
5000+0.053 EUR
Mindestbestellmenge: 715
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FM25CL64B-G FM25CL64B-G.pdf
FM25CL64B-G
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; SPI; 8kx8bit; 2.7÷3.65VDC; 20MHz; SO8
Case: SO8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.65V DC
Memory: 64kb FRAM
Clock frequency: 20MHz
Memory organisation: 8kx8bit
Interface: SPI
auf Bestellung 1777 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.35 EUR
21+3.52 EUR
Mindestbestellmenge: 17
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BAT5406WH6327XTSA1 BAT5404E6327HTSA1.pdf
BAT5406WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 230mW
Mounting: SMD
Load current: 0.2A
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
Max. forward voltage: 0.8V
Max. off-state voltage: 30V
Semiconductor structure: common anode; double
Case: SOT323
Type of diode: Schottky switching
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.1 EUR
Mindestbestellmenge: 23
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IR2101PBF description ir2101.pdf
IR2101PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -270...130mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 160ns
Turn-off time: 150ns
auf Bestellung 317 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.42 EUR
28+2.59 EUR
31+2.35 EUR
34+2.12 EUR
50+2.07 EUR
Mindestbestellmenge: 21
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IR2101STRPBF description IR2101SPBF.pdf
IR2101STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 160ns
Turn-off time: 150ns
auf Bestellung 1627 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
51+1.42 EUR
69+1.04 EUR
76+0.94 EUR
81+0.89 EUR
100+0.87 EUR
Mindestbestellmenge: 51
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IRF7401TRPBF description irf7401pbf.pdf
IRF7401TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 8.7A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 8.7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7404TRPBF description irf7404pbf.pdf
IRF7404TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.7A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2153PBF description ir2153.pdf
IR2153PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Power: 1W
Number of channels: 2
Supply voltage: 10...15.6V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 80ns
Turn-off time: 40ns
auf Bestellung 198 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.39 EUR
41+1.77 EUR
50+1.56 EUR
100+1.49 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
IR2153SPBF description ir2153.pdf
IR2153SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Power: 625mW
Mounting: SMD
Operating temperature: -40...125°C
Turn-off time: 40ns
Turn-on time: 80ns
Number of channels: 2
Supply voltage: 10...15.6V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Voltage class: 600V
Case: SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Kind of package: tube
auf Bestellung 276 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.13 EUR
46+1.59 EUR
49+1.47 EUR
50+1.44 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
IR2153STRPBF description IR2153DPBF.pdf
IR2153STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Power: 625mW
Mounting: SMD
Operating temperature: -40...125°C
Turn-off time: 40ns
Turn-on time: 80ns
Number of channels: 2
Supply voltage: 10...15.6V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Voltage class: 600V
Case: SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Kind of package: reel; tape
Produkt ist nicht verfügbar
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IRFR9024NTRLPBF irfr9024npbf.pdf
IRFR9024NTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -11A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR9024NTRPBF description irfr9024npbf.pdf
IRFR9024NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -11A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 3278 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
56+1.29 EUR
88+0.82 EUR
133+0.54 EUR
200+0.48 EUR
500+0.42 EUR
1000+0.38 EUR
2000+0.35 EUR
Mindestbestellmenge: 56
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AUIRFR9024NTRL INFN-S-A0002298863-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -8A; Idm: -44A; 38W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -8A
Pulsed drain current: -44A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: SMD
Gate charge: 19nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRL3705NPBF description irl3705n.pdf
IRL3705NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 130W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 89A
Power dissipation: 130W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate-source voltage: ±16V
Gate charge: 65.3nC
On-state resistance: 10mΩ
Produkt ist nicht verfügbar
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IRL3705NSTRLPBF irl3705nspbf.pdf
IRL3705NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 89A
Power dissipation: 170W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRL3705ZSTRLPBF IRL3705ZSTRLPBF.pdf
IRL3705ZSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 86A; 130W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 86A
Power dissipation: 130W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLB3813PBF irlb3813pbf.pdf
IRLB3813PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 260A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 260A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.95mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRLB4132PBF IRLB4132PbF.pdf
IRLB4132PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 620A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 620A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: THT
Kind of channel: enhancement
auf Bestellung 2019 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
46+1.56 EUR
59+1.23 EUR
67+1.08 EUR
91+0.79 EUR
103+0.7 EUR
250+0.6 EUR
500+0.54 EUR
1000+0.5 EUR
Mindestbestellmenge: 46
Im Einkaufswagen  Stück im Wert von  UAH
IRF7303TRPBF irf7303pbf.pdf
IRF7303TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 4.9A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF7309TRPBF description irf7309pbf.pdf
IRF7309TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4/-3A
Power dissipation: 1.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.05/0.1Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 747 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.3 EUR
85+0.85 EUR
132+0.54 EUR
200+0.48 EUR
500+0.45 EUR
Mindestbestellmenge: 55
Im Einkaufswagen  Stück im Wert von  UAH
IRLR2905ZTRPBF IRLR2905ZTRPBF.pdf
IRLR2905ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 43A; Idm: 240A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 43A
Pulsed drain current: 240A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1876 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.44 EUR
65+1.12 EUR
73+0.99 EUR
97+0.74 EUR
109+0.66 EUR
500+0.51 EUR
1000+0.47 EUR
Mindestbestellmenge: 50
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AUIRLR2905ZTRL AUIRLR2905Z.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 42A; Idm: 240A; 110W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 35nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IGW15N120H3FKSA1 IGW15N120H3-DTE.pdf
IGW15N120H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 217W; TO247-3; H3
Mounting: THT
Manufacturer series: H3
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Case: TO247-3
Technology: TRENCHSTOP™ 3
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 217W
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.13 EUR
24+3.09 EUR
27+2.7 EUR
29+2.47 EUR
30+2.43 EUR
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IHW15N120E1XKSA1 IHW15N120E1.pdf
IHW15N120E1XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 15A; 62.2W; TO247-3
Mounting: THT
Pulsed collector current: 45A
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Case: TO247-3
Technology: TRENCHSTOP™ RC
Kind of package: tube
Turn-on time: 1940ns
Gate charge: 90nC
Turn-off time: 1450ns
Collector current: 15A
Gate-emitter voltage: ±20V
Power dissipation: 62.2W
auf Bestellung 46 Stücke:
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26+2.76 EUR
37+1.96 EUR
41+1.76 EUR
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IHW15N120R3FKSA1 IHW15N120R3.pdf
IHW15N120R3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 15A; 127W; TO247-3
Mounting: THT
Pulsed collector current: 45A
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Case: TO247-3
Technology: TRENCHSTOP™ RC
Kind of package: tube
Gate charge: 165nC
Turn-off time: 346ns
Collector current: 15A
Gate-emitter voltage: ±20V
Power dissipation: 127W
auf Bestellung 195 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.93 EUR
25+2.9 EUR
30+2.42 EUR
120+2.23 EUR
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IKW15N120BH6XKSA1 IKW15N120BH6.pdf
IKW15N120BH6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 100W; TO247-3
Mounting: THT
Pulsed collector current: 60A
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
Technology: TRENCHSTOP™ 6
Kind of package: tube
Gate charge: 92nC
Collector current: 15A
Gate-emitter voltage: ±20V
Power dissipation: 100W
Produkt ist nicht verfügbar
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IKW15N120T2FKSA1 IKW15N120T2_Rev2_1.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b426d2d43acd
IKW15N120T2FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 235W; TO247-3
Mounting: THT
Pulsed collector current: 60A
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
Technology: TRENCHSTOP™ 2
Kind of package: tube
Turn-on time: 57ns
Gate charge: 93nC
Turn-off time: 457ns
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 235W
auf Bestellung 57 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5.08 EUR
17+4.3 EUR
Mindestbestellmenge: 15
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IRLML6344TRPBF irlml6344pbf.pdf
IRLML6344TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRLML0060TRPBF irlml0060pbf.pdf
IRLML0060TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.7A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.7A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 14747 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
122+0.59 EUR
169+0.42 EUR
248+0.29 EUR
291+0.25 EUR
500+0.17 EUR
1000+0.15 EUR
3000+0.13 EUR
6000+0.12 EUR
9000+0.11 EUR
Mindestbestellmenge: 122
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IGW75N65H5XKSA1 IGW75N65H5.pdf
IGW75N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 198W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 198W
Case: TO247-3
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Turn-off time: 215ns
Turn-on time: 61ns
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.52 EUR
19+3.95 EUR
20+3.6 EUR
30+3.19 EUR
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IGZ75N65H5XKSA1 IGZ75N65H5XKSA1-DTE.pdf
IGZ75N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 197W; TO247-4
Type of transistor: IGBT
Power dissipation: 197W
Case: TO247-4
Mounting: THT
Gate charge: 166nC
Kind of package: tube
Turn-off time: 415ns
Turn-on time: 37ns
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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IKW75N65EH5XKSA1 IKW75N65EH5.pdf
IKW75N65EH5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 198W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 198W
Case: TO247-3
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Turn-off time: 215ns
Turn-on time: 61ns
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H5
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+23.84 EUR
Mindestbestellmenge: 3
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IKW75N65ES5XKSA1 IKW75N65ES5.pdf
IKW75N65ES5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 197W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 197W
Case: TO247-3
Mounting: THT
Gate charge: 164nC
Kind of package: tube
Turn-off time: 185ns
Turn-on time: 86ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 80A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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IKZ75N65EL5XKSA1 IKZ75N65EL5.pdf
IKZ75N65EL5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; 268W; TO247-4
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 268W
Case: TO247-4
Mounting: THT
Gate charge: 436nC
Kind of package: tube
Turn-off time: 325ns
Turn-on time: 143ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 100A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKZ75N65ES5XKSA1 IKZ75N65ES5.pdf
IKZ75N65ES5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 197W; TO247-4
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 197W
Case: TO247-4
Mounting: THT
Gate charge: 164nC
Kind of package: tube
Turn-off time: 427ns
Turn-on time: 71ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 80A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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SPW35N60CFD SPW35N60CFD.pdf
SPW35N60CFD
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21.6A; 313W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21.6A
Power dissipation: 313W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.118Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF540ZPBF description irf540z.pdf
IRF540ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 92W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 92W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 26.5mΩ
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1310 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
84+0.86 EUR
102+0.7 EUR
114+0.63 EUR
Mindestbestellmenge: 84
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IRF9530NSTRLPBF irf9530nspbf.pdf
IRF9530NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -14A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -14A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRFL014NTRPBF description irfl014npbf.pdf
IRFL014NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 1.9A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 1.9A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IGB10N60TATMA1 IGB10N60T-DTE.pdf
IGB10N60TATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 110W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 110W
Case: D2PAK
Gate-emitter voltage: ±20V
Mounting: SMD
Kind of package: tube
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
52+1.4 EUR
76+0.94 EUR
105+0.69 EUR
250+0.64 EUR
Mindestbestellmenge: 52
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IGP10N60TXKSA1 IGP10N60T-DTE.pdf
IGP10N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 18A; 110W; TO220-3
Type of transistor: IGBT
Power dissipation: 110W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Collector current: 18A
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.74 EUR
44+1.63 EUR
Mindestbestellmenge: 41
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IKA10N60TXKSA1 IKA10N60T.pdf
IKA10N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 7.2A; 30W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 30W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 67nC
Turn-on time: 20ns
Turn-off time: 250ns
Collector current: 7.2A
Produkt ist nicht verfügbar
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IKB10N60TATMA1 IKB10N60T.pdf
IKB10N60TATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 18A; 110W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 62nC
Turn-on time: 20ns
Turn-off time: 253ns
Collector current: 18A
auf Bestellung 561 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.37 EUR
42+1.73 EUR
48+1.52 EUR
Mindestbestellmenge: 31
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IKD10N60RATMA1 IKD10N60R.pdf
IKD10N60RATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 64nC
Turn-on time: 24ns
Turn-off time: 331ns
Collector current: 10A
Produkt ist nicht verfügbar
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IKD10N60RFATMA1 IKD10N60RF.pdf
IKD10N60RFATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 64nC
Turn-on time: 27ns
Turn-off time: 186ns
Collector current: 10A
Produkt ist nicht verfügbar
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