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BSS84PH6327XTSA2 BSS84PH6327XTSA2 INFINEON TECHNOLOGIES BSS84P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.14A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.14A
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 0.37nC
Technology: SIPMOS™
auf Bestellung 14528 Stücke:
Lieferzeit 14-21 Tag (e)
295+0.24 EUR
421+0.17 EUR
616+0.12 EUR
731+0.098 EUR
1049+0.068 EUR
1191+0.06 EUR
3000+0.051 EUR
6000+0.047 EUR
9000+0.045 EUR
Mindestbestellmenge: 295
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BAT6404WH6327XTSA1 BAT6404WH6327XTSA1 INFINEON TECHNOLOGIES BAT6402VH6327XTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 40V; 0.25A; 250mW
Mounting: SMD
Load current: 0.25A
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
Max. forward voltage: 0.75V
Max. off-state voltage: 40V
Semiconductor structure: double series
Case: SOT323
Type of diode: Schottky switching
auf Bestellung 2743 Stücke:
Lieferzeit 14-21 Tag (e)
385+0.19 EUR
417+0.17 EUR
505+0.14 EUR
583+0.12 EUR
873+0.082 EUR
1000+0.078 EUR
Mindestbestellmenge: 385
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BAT6406WH6327XTSA1 BAT6406WH6327XTSA1 INFINEON TECHNOLOGIES BAT6402VH6327XTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 40V; 0.25A; 250mW
Mounting: SMD
Load current: 0.25A
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
Max. forward voltage: 0.75V
Max. off-state voltage: 40V
Semiconductor structure: common anode; double
Case: SOT323
Type of diode: Schottky switching
auf Bestellung 10045 Stücke:
Lieferzeit 14-21 Tag (e)
264+0.27 EUR
410+0.17 EUR
562+0.13 EUR
642+0.11 EUR
848+0.084 EUR
3000+0.083 EUR
Mindestbestellmenge: 264
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IR11672ASTRPBF INFINEON TECHNOLOGIES ir11672aspbf.pdf?fileId=5546d462533600a4015355c455561653 Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8
Type of integrated circuit: driver
Topology: flyback; push-pull; resonant LLC
Kind of integrated circuit: gate driver
Case: SO8
Output current: -7...2A
Mounting: SMD
Operating temperature: -40...125°C
Application: SMPS
Kind of package: reel; tape
Supply voltage: 11.4...18V DC
Power: 625mW
Voltage class: 200V
auf Bestellung 2489 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.09 EUR
41+1.76 EUR
42+1.72 EUR
Mindestbestellmenge: 35
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BAS7004WH6327XTSA1 BAS7004WH6327XTSA1 INFINEON TECHNOLOGIES BAS7004E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 250mW
Mounting: SMD
Load current: 70mA
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1V
Max. off-state voltage: 70V
Semiconductor structure: double series
Case: SOT323
Type of diode: Schottky switching
auf Bestellung 735 Stücke:
Lieferzeit 14-21 Tag (e)
334+0.21 EUR
376+0.19 EUR
596+0.12 EUR
735+0.097 EUR
Mindestbestellmenge: 334
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IRS2184STRPBF IRS2184STRPBF INFINEON TECHNOLOGIES irs2184.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
auf Bestellung 2340 Stücke:
Lieferzeit 14-21 Tag (e)
39+1.84 EUR
53+1.36 EUR
56+1.29 EUR
Mindestbestellmenge: 39
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FM24C64B-GTR INFINEON TECHNOLOGIES Infineon-FM24C64B_64-Kbit_(8_K_8)_Serial_(I2C)_F-RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdee5b30f8 Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 4.5÷5.5VDC; 1MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 64kb FRAM
Interface: I2C
Memory organisation: 8kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
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TT210N12KOF TT210N12KOF INFINEON TECHNOLOGIES TT210N12KOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 210A; BG-PB50-1; screw
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Gate current: 150mA
Max. forward voltage: 1.65V
Load current: 210A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 6.6kA
Case: BG-PB50-1
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+110.04 EUR
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IRS21531DSTRPBF IRS21531DSTRPBF INFINEON TECHNOLOGIES IRSDS08244-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Kind of package: reel; tape
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -260...180mA
Turn-off time: 50ns
Turn-on time: 0.12µs
Power: 625mW
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Voltage class: 600V
auf Bestellung 1513 Stücke:
Lieferzeit 14-21 Tag (e)
56+1.29 EUR
77+0.93 EUR
82+0.87 EUR
Mindestbestellmenge: 56
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BCR400WH6327XTSA1 BCR400WH6327XTSA1 INFINEON TECHNOLOGIES BCR400W.pdf Category: Drivers - integrated circuits
Description: IC: driver; SOT343; 10mA; 330mW; 1.6÷18VDC; active bias controller
Kind of package: reel; tape
Mounting: SMD
Output current: 10mA
Power: 0.33W
Supply voltage: 1.6...18V DC
Integrated circuit features: active bias controller
Type of integrated circuit: driver
Case: SOT343
auf Bestellung 2877 Stücke:
Lieferzeit 14-21 Tag (e)
313+0.23 EUR
424+0.17 EUR
500+0.14 EUR
569+0.13 EUR
Mindestbestellmenge: 313
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IRS21844STRPBF IRS21844STRPBF INFINEON TECHNOLOGIES irs2184.pdf?fileId=5546d462533600a401535676d8da27db Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
auf Bestellung 2394 Stücke:
Lieferzeit 14-21 Tag (e)
32+2.25 EUR
42+1.73 EUR
45+1.62 EUR
Mindestbestellmenge: 32
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TLD1120ELXUMA1 TLD1120ELXUMA1 INFINEON TECHNOLOGIES TLD1120EL.pdf Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 360mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Output current: 0.36A
Case: PG-SSOP-14-EP
Mounting: SMD
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Operating voltage: 5.5...40V DC
Protection: overheating OTP
Technology: Litix™
auf Bestellung 2059 Stücke:
Lieferzeit 14-21 Tag (e)
79+0.92 EUR
95+0.76 EUR
103+0.7 EUR
Mindestbestellmenge: 79
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BTS724G BTS724G INFINEON TECHNOLOGIES BTS724G.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.3÷7.3A; Ch: 4; N-Channel; SMD; SO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3.3...7.3A
Number of channels: 4
Mounting: SMD
Case: SO20
On-state resistance: 22.5mΩ
Supply voltage: 5.5...40V DC
Technology: Classic PROFET
Kind of output: N-Channel
auf Bestellung 1966 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.24 EUR
13+5.81 EUR
15+5 EUR
25+4.13 EUR
50+3.88 EUR
Mindestbestellmenge: 10
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ITS4141NHUMA1 ITS4141NHUMA1 INFINEON TECHNOLOGIES ITS4141N.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Mounting: SMD
Case: SOT223
On-state resistance: 0.2Ω
Kind of package: reel; tape
Operating temperature: -30...85°C
Supply voltage: 12...45V DC
Technology: Industrial PROFET
Kind of output: N-Channel
Turn-off time: 0.1ms
Turn-on time: 150µs
Power dissipation: 1.4W
auf Bestellung 143 Stücke:
Lieferzeit 14-21 Tag (e)
39+1.84 EUR
54+1.34 EUR
58+1.24 EUR
59+1.22 EUR
Mindestbestellmenge: 39
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BAS4007WH6327XTSA1 BAS4007WH6327XTSA1 INFINEON TECHNOLOGIES BAS4004E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT343; SMD; 40V; 0.12A; 250mW
Mounting: SMD
Load current: 0.12A
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Max. forward voltage: 1V
Max. off-state voltage: 40V
Semiconductor structure: double independent
Case: SOT343
Type of diode: Schottky switching
auf Bestellung 2984 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.39 EUR
224+0.32 EUR
261+0.27 EUR
479+0.15 EUR
696+0.1 EUR
1000+0.09 EUR
Mindestbestellmenge: 186
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BAS7005WH6327XTSA1 BAS7005WH6327XTSA1 INFINEON TECHNOLOGIES BAS7004E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common cathode; double
Max. forward voltage: 1V
Power dissipation: 0.25W
Max. forward impulse current: 0.1A
auf Bestellung 2275 Stücke:
Lieferzeit 14-21 Tag (e)
334+0.21 EUR
443+0.16 EUR
655+0.11 EUR
855+0.084 EUR
1000+0.075 EUR
Mindestbestellmenge: 334
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ITS5215L ITS5215L INFINEON TECHNOLOGIES ITS5215L.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.7A; Ch: 2; N-Channel; SMD; BSOP12
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3.7A
Number of channels: 2
Mounting: SMD
Case: BSOP12
On-state resistance: 70mΩ
Supply voltage: 5.5...40V DC
Technology: Industrial PROFET
Kind of output: N-Channel
auf Bestellung 227 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.85 EUR
28+2.57 EUR
33+2.2 EUR
35+2.06 EUR
Mindestbestellmenge: 26
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IKD04N60RFATMA1 IKD04N60RFATMA1 INFINEON TECHNOLOGIES IKD04N60RF.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Collector current: 4A
Pulsed collector current: 12A
Produkt ist nicht verfügbar
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IRFP4468PBFXKMA1 INFINEON TECHNOLOGIES Infineon-IRFP4468-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a40153562c73472019 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 290A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 290A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFP4568PBFXKMA1 INFINEON TECHNOLOGIES Infineon-IRFP4568-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a40153562c7c32201b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 171A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 171A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFP4668PBFXKMA1 INFINEON TECHNOLOGIES infineon-irfp4668-datasheet-en.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 130A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 130A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 9.7mΩ
Mounting: THT
Gate charge: 161nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 52 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.03 EUR
20+3.76 EUR
25+2.92 EUR
Mindestbestellmenge: 18
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IRF7103TRPBFXTMA1 INFINEON TECHNOLOGIES irf7103pbf.pdf?fileId=5546d462533600a4015355f0f0141ac6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 3A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 3A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3808 Stücke:
Lieferzeit 14-21 Tag (e)
64+1.13 EUR
102+0.7 EUR
145+0.49 EUR
500+0.36 EUR
1000+0.31 EUR
2000+0.26 EUR
Mindestbestellmenge: 64
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IRF7341GTRPBF IRF7341GTRPBF INFINEON TECHNOLOGIES irf7341gpbf.pdf?fileId=5546d462533600a4015355f63e9b1b5f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5.1A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2722 Stücke:
Lieferzeit 14-21 Tag (e)
28+2.62 EUR
34+2.16 EUR
38+1.9 EUR
47+1.54 EUR
54+1.33 EUR
100+1.16 EUR
250+1 EUR
500+0.93 EUR
Mindestbestellmenge: 28
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IRF7341TRPBFXTMA1 IRF7341TRPBFXTMA1 INFINEON TECHNOLOGIES infineon-irf7341-datasheet-en.pdf?fileId=5546d462533600a4015355f64f031b63 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4.7A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4.7A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1881 Stücke:
Lieferzeit 14-21 Tag (e)
55+1.32 EUR
89+0.8 EUR
125+0.57 EUR
500+0.42 EUR
1000+0.36 EUR
Mindestbestellmenge: 55
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IRFR6215TRLPBF INFINEON TECHNOLOGIES irfr6215pbf.pdf?fileId=5546d462533600a40153563595592114 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 150V; 13A; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 13A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFP4110PBFXKMA1 IRFP4110PBFXKMA1 INFINEON TECHNOLOGIES Infineon-IRFP4110-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a4015356290ec51ffe Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.03 EUR
27+2.67 EUR
31+2.33 EUR
Mindestbestellmenge: 18
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IRFP3077PBFXKMA1 INFINEON TECHNOLOGIES Infineon-IRFP3077-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a401535628cd701fee Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 200A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 200A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 186 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.33 EUR
24+2.99 EUR
28+2.65 EUR
30+2.46 EUR
100+2.3 EUR
Mindestbestellmenge: 22
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IRS2153DSTRPBF INFINEON TECHNOLOGIES irs2153d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -260...180mA
Power: 625mW
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
Produkt ist nicht verfügbar
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IRFB3077PBFXKMA1 INFINEON TECHNOLOGIES Infineon-IRFB3077-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a4015356153f0d1def Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 210A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 210A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFB3306PBF IRFB3306PBF INFINEON TECHNOLOGIES irfs3306pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 160A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 160A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 1157 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.49 EUR
32+2.29 EUR
42+1.73 EUR
49+1.47 EUR
55+1.3 EUR
100+1.16 EUR
200+1.04 EUR
500+0.9 EUR
1000+0.83 EUR
Mindestbestellmenge: 29
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IRFB7430PBF IRFB7430PBF INFINEON TECHNOLOGIES IRFB7430PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 409A; 375W; TO220AB
Kind of package: tube
Case: TO220AB
Kind of channel: enhancement
Mounting: THT
Technology: HEXFET®
Type of transistor: N-MOSFET
Trade name: StrongIRFET
Gate charge: 300nC
On-state resistance: 1.3mΩ
Power dissipation: 375W
Drain current: 409A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Polarisation: unipolar
auf Bestellung 56 Stücke:
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21+3.53 EUR
23+3.16 EUR
29+2.55 EUR
50+1.83 EUR
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IRFB3207PBF IRFB3207PBF INFINEON TECHNOLOGIES irfs3207pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.35 EUR
32+2.27 EUR
34+2.14 EUR
35+2.06 EUR
50+2 EUR
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IPD025N06NATMA1 IPD025N06NATMA1 INFINEON TECHNOLOGIES IPD025N06N-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 167W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 167W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
auf Bestellung 1555 Stücke:
Lieferzeit 14-21 Tag (e)
28+2.56 EUR
35+2.1 EUR
50+2.03 EUR
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SI4435DYTRPBF SI4435DYTRPBF INFINEON TECHNOLOGIES si4435dypbf.pdf?fileId=5546d462533600a4015356847c882983 description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.4A; Idm: -50A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.4A
Pulsed drain current: -50A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2428 Stücke:
Lieferzeit 14-21 Tag (e)
65+1.1 EUR
92+0.78 EUR
126+0.57 EUR
144+0.5 EUR
250+0.43 EUR
500+0.39 EUR
Mindestbestellmenge: 65
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BSC035N10NS5ATMA1 BSC035N10NS5ATMA1 INFINEON TECHNOLOGIES BSC035N10NS5-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
auf Bestellung 4141 Stücke:
Lieferzeit 14-21 Tag (e)
38+1.92 EUR
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BSO211PHXUMA1 BSO211PHXUMA1 INFINEON TECHNOLOGIES BSO211PHXUMA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.6A; 1.6W; PG-DSO-8
Case: PG-DSO-8
Mounting: SMD
Drain-source voltage: -20V
Drain current: -4.6A
On-state resistance: 67mΩ
Polarisation: unipolar
Power dissipation: 1.6W
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Kind of channel: enhancement
Gate-source voltage: ±12V
auf Bestellung 2320 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
190+0.38 EUR
205+0.35 EUR
225+0.32 EUR
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IRF100B201 IRF100B201 INFINEON TECHNOLOGIES IRF100x201.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 690A; 441W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 136A
Pulsed drain current: 690A
Power dissipation: 441W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 393 Stücke:
Lieferzeit 14-21 Tag (e)
34+2.14 EUR
36+2.03 EUR
42+1.72 EUR
46+1.57 EUR
51+1.42 EUR
100+1.3 EUR
200+1.2 EUR
Mindestbestellmenge: 34
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AIKQ120N60CTXKSA1 AIKQ120N60CTXKSA1 INFINEON TECHNOLOGIES AIKQ120N60CT.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3
Type of transistor: IGBT
Power dissipation: 833W
Case: TO247-3
Mounting: THT
Gate charge: 772nC
Kind of package: tube
Turn-off time: 343ns
Turn-on time: 76ns
Collector current: 120A
Gate-emitter voltage: ±20V
Technology: TRENCHSTOP™
Pulsed collector current: 480A
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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IPD25N06S4L30ATMA2 INFINEON TECHNOLOGIES Infineon-IPD25N06S4L_30-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038898f7b0caa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 17A; Idm: 92A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 92A
Power dissipation: 29W
Case: PG-TO252-3-11
Gate-source voltage: ±16V
On-state resistance: 30mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T2
Produkt ist nicht verfügbar
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BC817UE6327HTSA1 BC817UE6327HTSA1 INFINEON TECHNOLOGIES BC817UE6327.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.5A; 0.33W; SC74
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SC74
Mounting: SMD
Frequency: 170MHz
auf Bestellung 2477 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.44 EUR
182+0.39 EUR
202+0.35 EUR
262+0.27 EUR
500+0.18 EUR
1000+0.15 EUR
Mindestbestellmenge: 162
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1EDI60N12AFXUMA1 1EDI60N12AFXUMA1 INFINEON TECHNOLOGIES 1EDIxxy12AF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,MOSFET gate driver
Type of integrated circuit: driver
Technology: EiceDRIVER™
Integrated circuit features: galvanically isolated
Kind of integrated circuit: high-side; MOSFET gate driver
Topology: single transistor
Kind of package: reel; tape
Mounting: SMD
Protection: undervoltage UVP
Output current: -6...6A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Voltage class: 1.2kV
Case: PG-DSO-8
Produkt ist nicht verfügbar
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IRS2103STRPBF INFINEON TECHNOLOGIES irs2103.pdf?fileId=5546d462533600a4015356762b71279f Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 185ns
Produkt ist nicht verfügbar
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ITS4140N ITS4140N INFINEON TECHNOLOGIES ITS4140N.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.2A; Ch: 1; N-Channel; SMD; SOT223-4
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-4
Supply voltage: 4.9...60V DC
Technology: Industrial PROFET
auf Bestellung 257 Stücke:
Lieferzeit 14-21 Tag (e)
55+1.32 EUR
60+1.2 EUR
68+1.06 EUR
100+0.96 EUR
Mindestbestellmenge: 55
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BSS159NH6327XTSA2 BSS159NH6327XTSA2 INFINEON TECHNOLOGIES BSS159NH6327XTSA2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Mounting: SMD
Polarisation: unipolar
Drain current: 0.23A
Power dissipation: 0.36W
On-state resistance: 8Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: depletion
Case: SOT23
auf Bestellung 282 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
282+0.26 EUR
Mindestbestellmenge: 125
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BCR402WH6327XTSA1 BCR402WH6327XTSA1 INFINEON TECHNOLOGIES bcr402w.pdf?folderId=db3a30431400ef68011407a9cfc70181&fileId=db3a30431400ef68011407c5054c0192 Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Topology: single transistor
Mounting: SMD
Output current: 20...60mA
Number of channels: 1
Operating voltage: 1.2...18V DC
Integrated circuit features: linear dimming
Kind of integrated circuit: current regulator; LED driver
Type of integrated circuit: driver
Case: SOT343
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
228+0.31 EUR
285+0.25 EUR
325+0.22 EUR
388+0.18 EUR
459+0.16 EUR
Mindestbestellmenge: 228
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IR2114SSPBF IR2114SSPBF INFINEON TECHNOLOGIES IR2114SSPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-/low-side,gate driver; SSOP24
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge
Mounting: SMD
Case: SSOP24
Operating temperature: -40...125°C
Output current: -1.5...1A
Turn-off time: 440ns
Turn-on time: 440ns
Number of channels: 2
Power: 1.5W
Supply voltage: 10.4...20V DC
Voltage class: 0.6/1.2kV
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.59 EUR
Mindestbestellmenge: 9
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BC847BE6327HTSA1 BC847BE6327HTSA1 INFINEON TECHNOLOGIES bc847_8_9_bc850.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 803 Stücke:
Lieferzeit 14-21 Tag (e)
715+0.1 EUR
803+0.089 EUR
Mindestbestellmenge: 715
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IRFB3006GPBF IRFB3006GPBF INFINEON TECHNOLOGIES irfb3006gpbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ICL8001GXUMA1 ICL8001GXUMA1 INFINEON TECHNOLOGIES ICL8001G-DTE.pdf Category: LED drivers
Description: IC: driver; flyback; PFC controller,SMPS controller,LED driver
Type of integrated circuit: driver
Topology: flyback
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Case: PG-DSO-8
Number of channels: 1
Mounting: SMD
Operating voltage: 10.5...26V DC
Integrated circuit features: phase-cut dimming; soft-start function
auf Bestellung 117 Stücke:
Lieferzeit 14-21 Tag (e)
54+1.34 EUR
61+1.19 EUR
67+1.07 EUR
100+1.02 EUR
Mindestbestellmenge: 54
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IHW40N135R5XKSA1 IHW40N135R5XKSA1 INFINEON TECHNOLOGIES Infineon-IHW40N135R5-DS-v02_02-EN.pdf?fileId=5546d462636cc8fb0163b0fe63f5326a Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.35kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 40A
Power dissipation: 197W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 305nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 0.5µs
Technology: TRENCHSTOP™ RC
auf Bestellung 64 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.56 EUR
19+3.88 EUR
24+3.02 EUR
Mindestbestellmenge: 16
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IRS25401PBF IRS25401PBF INFINEON TECHNOLOGIES irs25401pbf.pdf Category: LED drivers
Description: IC: driver; buck; high-/low-side,LED driver; DIP8; -700÷500mA; 1W
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: high-/low-side; LED driver
Case: DIP8
Output current: -700...500mA
Number of channels: 2
Mounting: THT
Operating temperature: -25...125°C
Kind of package: tube
Supply voltage: 8...16.6V DC
Voltage class: 200V
Turn-off time: 180ns
Turn-on time: 320ns
Power: 1W
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
38+1.89 EUR
Mindestbestellmenge: 38
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IPP048N12N3GXKSA1 IPP048N12N3GXKSA1 INFINEON TECHNOLOGIES IPP048N12N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO220-3
Mounting: THT
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO220-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 4.8mΩ
Gate-source voltage: ±20V
Drain current: 120A
Power dissipation: 300W
Drain-source voltage: 120V
auf Bestellung 522 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.63 EUR
18+4.05 EUR
50+2.72 EUR
100+2.43 EUR
Mindestbestellmenge: 16
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IPP147N12N3GXKSA1 IPP147N12N3GXKSA1 INFINEON TECHNOLOGIES IPP147N12N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 56A; 107W; PG-TO220-3
Mounting: THT
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO220-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 14.7mΩ
Gate-source voltage: ±20V
Drain current: 56A
Power dissipation: 107W
Drain-source voltage: 120V
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
39+1.83 EUR
Mindestbestellmenge: 39
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IPP114N12N3GXKSA1 IPP114N12N3GXKSA1 INFINEON TECHNOLOGIES IPP114N12N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 75A; 136W; PG-TO220-3
Mounting: THT
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO220-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 11.4mΩ
Gate-source voltage: ±20V
Drain current: 75A
Power dissipation: 136W
Drain-source voltage: 120V
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)
33+2.17 EUR
38+1.89 EUR
50+1.47 EUR
Mindestbestellmenge: 33
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IRFR4620TRLPBF IRFR4620TRLPBF INFINEON TECHNOLOGIES irfr4620pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; 144W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Power dissipation: 144W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 2176 Stücke:
Lieferzeit 14-21 Tag (e)
28+2.62 EUR
39+1.84 EUR
47+1.54 EUR
53+1.36 EUR
100+1.2 EUR
250+1.04 EUR
500+0.94 EUR
Mindestbestellmenge: 28
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IRFB4020PBFXKMA1 INFINEON TECHNOLOGIES infineon-irfb4020-datasheet-en.pdf?fileId=5546d462533600a4015356158ffd1e05 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BAT5405E6327HTSA1 BAT5405E6327HTSA1 INFINEON TECHNOLOGIES BAT5404E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 230mW
Case: SOT23
Mounting: SMD
Type of diode: Schottky switching
Load current: 0.2A
Power dissipation: 0.23W
Max. forward impulse current: 0.6A
Max. forward voltage: 0.8V
Max. off-state voltage: 30V
Semiconductor structure: common cathode; double
auf Bestellung 4542 Stücke:
Lieferzeit 14-21 Tag (e)
556+0.13 EUR
676+0.11 EUR
725+0.099 EUR
884+0.081 EUR
966+0.074 EUR
1025+0.07 EUR
Mindestbestellmenge: 556
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IKP30N65H5XKSA1 IKP30N65H5XKSA1 INFINEON TECHNOLOGIES IKP30N65H5-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 36A; 188W; TO220-3; H5
Type of transistor: IGBT
Power dissipation: 188W
Case: TO220-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Collector-emitter voltage: 650V
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 36A
Pulsed collector current: 90A
Produkt ist nicht verfügbar
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IPB042N10N3GATMA1 IPB042N10N3GATMA1 INFINEON TECHNOLOGIES IPB042N10N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BFP460H6327XTSA1 BFP460H6327XTSA1 INFINEON TECHNOLOGIES Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920 Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 70mA; 0.23W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.23W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Collector current: 70mA
Collector-emitter voltage: 4.5V
Current gain: 90...160
Frequency: 22GHz
Kind of transistor: RF
Technology: SIEGET™
auf Bestellung 2945 Stücke:
Lieferzeit 14-21 Tag (e)
218+0.33 EUR
272+0.26 EUR
307+0.23 EUR
355+0.2 EUR
391+0.18 EUR
424+0.17 EUR
463+0.15 EUR
Mindestbestellmenge: 218
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BSS84PH6327XTSA2 BSS84P.pdf
BSS84PH6327XTSA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.14A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.14A
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 0.37nC
Technology: SIPMOS™
auf Bestellung 14528 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
421+0.17 EUR
616+0.12 EUR
731+0.098 EUR
1049+0.068 EUR
1191+0.06 EUR
3000+0.051 EUR
6000+0.047 EUR
9000+0.045 EUR
Mindestbestellmenge: 295
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BAT6404WH6327XTSA1 BAT6402VH6327XTSA1.pdf
BAT6404WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 40V; 0.25A; 250mW
Mounting: SMD
Load current: 0.25A
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
Max. forward voltage: 0.75V
Max. off-state voltage: 40V
Semiconductor structure: double series
Case: SOT323
Type of diode: Schottky switching
auf Bestellung 2743 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
417+0.17 EUR
505+0.14 EUR
583+0.12 EUR
873+0.082 EUR
1000+0.078 EUR
Mindestbestellmenge: 385
Im Einkaufswagen  Stück im Wert von  UAH
BAT6406WH6327XTSA1 BAT6402VH6327XTSA1.pdf
BAT6406WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 40V; 0.25A; 250mW
Mounting: SMD
Load current: 0.25A
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
Max. forward voltage: 0.75V
Max. off-state voltage: 40V
Semiconductor structure: common anode; double
Case: SOT323
Type of diode: Schottky switching
auf Bestellung 10045 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
410+0.17 EUR
562+0.13 EUR
642+0.11 EUR
848+0.084 EUR
3000+0.083 EUR
Mindestbestellmenge: 264
Im Einkaufswagen  Stück im Wert von  UAH
IR11672ASTRPBF ir11672aspbf.pdf?fileId=5546d462533600a4015355c455561653
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8
Type of integrated circuit: driver
Topology: flyback; push-pull; resonant LLC
Kind of integrated circuit: gate driver
Case: SO8
Output current: -7...2A
Mounting: SMD
Operating temperature: -40...125°C
Application: SMPS
Kind of package: reel; tape
Supply voltage: 11.4...18V DC
Power: 625mW
Voltage class: 200V
auf Bestellung 2489 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.09 EUR
41+1.76 EUR
42+1.72 EUR
Mindestbestellmenge: 35
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BAS7004WH6327XTSA1 BAS7004E6327HTSA1.pdf
BAS7004WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 250mW
Mounting: SMD
Load current: 70mA
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1V
Max. off-state voltage: 70V
Semiconductor structure: double series
Case: SOT323
Type of diode: Schottky switching
auf Bestellung 735 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
376+0.19 EUR
596+0.12 EUR
735+0.097 EUR
Mindestbestellmenge: 334
Im Einkaufswagen  Stück im Wert von  UAH
IRS2184STRPBF irs2184.pdf
IRS2184STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
auf Bestellung 2340 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
39+1.84 EUR
53+1.36 EUR
56+1.29 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
FM24C64B-GTR Infineon-FM24C64B_64-Kbit_(8_K_8)_Serial_(I2C)_F-RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdee5b30f8
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 4.5÷5.5VDC; 1MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 64kb FRAM
Interface: I2C
Memory organisation: 8kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TT210N12KOF TT210N12KOF.pdf
TT210N12KOF
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 210A; BG-PB50-1; screw
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Gate current: 150mA
Max. forward voltage: 1.65V
Load current: 210A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 6.6kA
Case: BG-PB50-1
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+110.04 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IRS21531DSTRPBF IRSDS08244-1.pdf?t.download=true&u=5oefqw
IRS21531DSTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Kind of package: reel; tape
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -260...180mA
Turn-off time: 50ns
Turn-on time: 0.12µs
Power: 625mW
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Voltage class: 600V
auf Bestellung 1513 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
56+1.29 EUR
77+0.93 EUR
82+0.87 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
BCR400WH6327XTSA1 BCR400W.pdf
BCR400WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Drivers - integrated circuits
Description: IC: driver; SOT343; 10mA; 330mW; 1.6÷18VDC; active bias controller
Kind of package: reel; tape
Mounting: SMD
Output current: 10mA
Power: 0.33W
Supply voltage: 1.6...18V DC
Integrated circuit features: active bias controller
Type of integrated circuit: driver
Case: SOT343
auf Bestellung 2877 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
424+0.17 EUR
500+0.14 EUR
569+0.13 EUR
Mindestbestellmenge: 313
Im Einkaufswagen  Stück im Wert von  UAH
IRS21844STRPBF irs2184.pdf?fileId=5546d462533600a401535676d8da27db
IRS21844STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 720ns
Turn-off time: 290ns
auf Bestellung 2394 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.25 EUR
42+1.73 EUR
45+1.62 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
TLD1120ELXUMA1 TLD1120EL.pdf
TLD1120ELXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 360mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Output current: 0.36A
Case: PG-SSOP-14-EP
Mounting: SMD
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Operating voltage: 5.5...40V DC
Protection: overheating OTP
Technology: Litix™
auf Bestellung 2059 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
79+0.92 EUR
95+0.76 EUR
103+0.7 EUR
Mindestbestellmenge: 79
Im Einkaufswagen  Stück im Wert von  UAH
BTS724G BTS724G.pdf
BTS724G
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.3÷7.3A; Ch: 4; N-Channel; SMD; SO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3.3...7.3A
Number of channels: 4
Mounting: SMD
Case: SO20
On-state resistance: 22.5mΩ
Supply voltage: 5.5...40V DC
Technology: Classic PROFET
Kind of output: N-Channel
auf Bestellung 1966 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.24 EUR
13+5.81 EUR
15+5 EUR
25+4.13 EUR
50+3.88 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
ITS4141NHUMA1 ITS4141N.pdf
ITS4141NHUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Mounting: SMD
Case: SOT223
On-state resistance: 0.2Ω
Kind of package: reel; tape
Operating temperature: -30...85°C
Supply voltage: 12...45V DC
Technology: Industrial PROFET
Kind of output: N-Channel
Turn-off time: 0.1ms
Turn-on time: 150µs
Power dissipation: 1.4W
auf Bestellung 143 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
39+1.84 EUR
54+1.34 EUR
58+1.24 EUR
59+1.22 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
BAS4007WH6327XTSA1 BAS4004E6327HTSA1.pdf
BAS4007WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT343; SMD; 40V; 0.12A; 250mW
Mounting: SMD
Load current: 0.12A
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Max. forward voltage: 1V
Max. off-state voltage: 40V
Semiconductor structure: double independent
Case: SOT343
Type of diode: Schottky switching
auf Bestellung 2984 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
224+0.32 EUR
261+0.27 EUR
479+0.15 EUR
696+0.1 EUR
1000+0.09 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
BAS7005WH6327XTSA1 BAS7004E6327HTSA1.pdf
BAS7005WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common cathode; double
Max. forward voltage: 1V
Power dissipation: 0.25W
Max. forward impulse current: 0.1A
auf Bestellung 2275 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
443+0.16 EUR
655+0.11 EUR
855+0.084 EUR
1000+0.075 EUR
Mindestbestellmenge: 334
Im Einkaufswagen  Stück im Wert von  UAH
ITS5215L ITS5215L.pdf
ITS5215L
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.7A; Ch: 2; N-Channel; SMD; BSOP12
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3.7A
Number of channels: 2
Mounting: SMD
Case: BSOP12
On-state resistance: 70mΩ
Supply voltage: 5.5...40V DC
Technology: Industrial PROFET
Kind of output: N-Channel
auf Bestellung 227 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.85 EUR
28+2.57 EUR
33+2.2 EUR
35+2.06 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
IKD04N60RFATMA1 IKD04N60RF.pdf
IKD04N60RFATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Collector current: 4A
Pulsed collector current: 12A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFP4468PBFXKMA1 Infineon-IRFP4468-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a40153562c73472019
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 290A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 290A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFP4568PBFXKMA1 Infineon-IRFP4568-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a40153562c7c32201b
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 171A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 171A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFP4668PBFXKMA1 infineon-irfp4668-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 130A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 130A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 9.7mΩ
Mounting: THT
Gate charge: 161nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 52 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.03 EUR
20+3.76 EUR
25+2.92 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
IRF7103TRPBFXTMA1 irf7103pbf.pdf?fileId=5546d462533600a4015355f0f0141ac6
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 3A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 3A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3808 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
64+1.13 EUR
102+0.7 EUR
145+0.49 EUR
500+0.36 EUR
1000+0.31 EUR
2000+0.26 EUR
Mindestbestellmenge: 64
Im Einkaufswagen  Stück im Wert von  UAH
IRF7341GTRPBF irf7341gpbf.pdf?fileId=5546d462533600a4015355f63e9b1b5f
IRF7341GTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5.1A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2722 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.62 EUR
34+2.16 EUR
38+1.9 EUR
47+1.54 EUR
54+1.33 EUR
100+1.16 EUR
250+1 EUR
500+0.93 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
IRF7341TRPBFXTMA1 infineon-irf7341-datasheet-en.pdf?fileId=5546d462533600a4015355f64f031b63
IRF7341TRPBFXTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4.7A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4.7A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1881 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.32 EUR
89+0.8 EUR
125+0.57 EUR
500+0.42 EUR
1000+0.36 EUR
Mindestbestellmenge: 55
Im Einkaufswagen  Stück im Wert von  UAH
IRFR6215TRLPBF irfr6215pbf.pdf?fileId=5546d462533600a40153563595592114
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 150V; 13A; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 13A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFP4110PBFXKMA1 Infineon-IRFP4110-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a4015356290ec51ffe
IRFP4110PBFXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.03 EUR
27+2.67 EUR
31+2.33 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
IRFP3077PBFXKMA1 Infineon-IRFP3077-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a401535628cd701fee
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 200A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 200A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 186 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.33 EUR
24+2.99 EUR
28+2.65 EUR
30+2.46 EUR
100+2.3 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
IRS2153DSTRPBF irs2153d.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -260...180mA
Power: 625mW
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFB3077PBFXKMA1 Infineon-IRFB3077-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a4015356153f0d1def
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 210A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 210A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFB3306PBF irfs3306pbf.pdf
IRFB3306PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 160A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 160A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 1157 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.49 EUR
32+2.29 EUR
42+1.73 EUR
49+1.47 EUR
55+1.3 EUR
100+1.16 EUR
200+1.04 EUR
500+0.9 EUR
1000+0.83 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
IRFB7430PBF IRFB7430PBF.pdf
IRFB7430PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 409A; 375W; TO220AB
Kind of package: tube
Case: TO220AB
Kind of channel: enhancement
Mounting: THT
Technology: HEXFET®
Type of transistor: N-MOSFET
Trade name: StrongIRFET
Gate charge: 300nC
On-state resistance: 1.3mΩ
Power dissipation: 375W
Drain current: 409A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Polarisation: unipolar
auf Bestellung 56 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.53 EUR
23+3.16 EUR
29+2.55 EUR
50+1.83 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IRFB3207PBF irfs3207pbf.pdf
IRFB3207PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.35 EUR
32+2.27 EUR
34+2.14 EUR
35+2.06 EUR
50+2 EUR
Mindestbestellmenge: 31
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IPD025N06NATMA1 IPD025N06N-DTE.pdf
IPD025N06NATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 167W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 167W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
auf Bestellung 1555 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.56 EUR
35+2.1 EUR
50+2.03 EUR
Mindestbestellmenge: 28
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SI4435DYTRPBF description si4435dypbf.pdf?fileId=5546d462533600a4015356847c882983
SI4435DYTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.4A; Idm: -50A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.4A
Pulsed drain current: -50A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2428 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
65+1.1 EUR
92+0.78 EUR
126+0.57 EUR
144+0.5 EUR
250+0.43 EUR
500+0.39 EUR
Mindestbestellmenge: 65
Im Einkaufswagen  Stück im Wert von  UAH
BSC035N10NS5ATMA1 BSC035N10NS5-DTE.pdf
BSC035N10NS5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
auf Bestellung 4141 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.92 EUR
Mindestbestellmenge: 38
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BSO211PHXUMA1 BSO211PHXUMA1-dte.pdf
BSO211PHXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.6A; 1.6W; PG-DSO-8
Case: PG-DSO-8
Mounting: SMD
Drain-source voltage: -20V
Drain current: -4.6A
On-state resistance: 67mΩ
Polarisation: unipolar
Power dissipation: 1.6W
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Kind of channel: enhancement
Gate-source voltage: ±12V
auf Bestellung 2320 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
190+0.38 EUR
205+0.35 EUR
225+0.32 EUR
Mindestbestellmenge: 173
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IRF100B201 IRF100x201.pdf
IRF100B201
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 690A; 441W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 136A
Pulsed drain current: 690A
Power dissipation: 441W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 393 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.14 EUR
36+2.03 EUR
42+1.72 EUR
46+1.57 EUR
51+1.42 EUR
100+1.3 EUR
200+1.2 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
AIKQ120N60CTXKSA1 AIKQ120N60CT.pdf
AIKQ120N60CTXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3
Type of transistor: IGBT
Power dissipation: 833W
Case: TO247-3
Mounting: THT
Gate charge: 772nC
Kind of package: tube
Turn-off time: 343ns
Turn-on time: 76ns
Collector current: 120A
Gate-emitter voltage: ±20V
Technology: TRENCHSTOP™
Pulsed collector current: 480A
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD25N06S4L30ATMA2 Infineon-IPD25N06S4L_30-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038898f7b0caa
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 17A; Idm: 92A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 92A
Power dissipation: 29W
Case: PG-TO252-3-11
Gate-source voltage: ±16V
On-state resistance: 30mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC817UE6327HTSA1 BC817UE6327.pdf
BC817UE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.5A; 0.33W; SC74
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SC74
Mounting: SMD
Frequency: 170MHz
auf Bestellung 2477 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
182+0.39 EUR
202+0.35 EUR
262+0.27 EUR
500+0.18 EUR
1000+0.15 EUR
Mindestbestellmenge: 162
Im Einkaufswagen  Stück im Wert von  UAH
1EDI60N12AFXUMA1 1EDIxxy12AF.pdf
1EDI60N12AFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,MOSFET gate driver
Type of integrated circuit: driver
Technology: EiceDRIVER™
Integrated circuit features: galvanically isolated
Kind of integrated circuit: high-side; MOSFET gate driver
Topology: single transistor
Kind of package: reel; tape
Mounting: SMD
Protection: undervoltage UVP
Output current: -6...6A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Voltage class: 1.2kV
Case: PG-DSO-8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2103STRPBF irs2103.pdf?fileId=5546d462533600a4015356762b71279f
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 185ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ITS4140N ITS4140N.pdf
ITS4140N
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.2A; Ch: 1; N-Channel; SMD; SOT223-4
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-4
Supply voltage: 4.9...60V DC
Technology: Industrial PROFET
auf Bestellung 257 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.32 EUR
60+1.2 EUR
68+1.06 EUR
100+0.96 EUR
Mindestbestellmenge: 55
Im Einkaufswagen  Stück im Wert von  UAH
BSS159NH6327XTSA2 BSS159NH6327XTSA2.pdf
BSS159NH6327XTSA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Mounting: SMD
Polarisation: unipolar
Drain current: 0.23A
Power dissipation: 0.36W
On-state resistance: 8Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: depletion
Case: SOT23
auf Bestellung 282 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
282+0.26 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
BCR402WH6327XTSA1 bcr402w.pdf?folderId=db3a30431400ef68011407a9cfc70181&fileId=db3a30431400ef68011407c5054c0192
BCR402WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Topology: single transistor
Mounting: SMD
Output current: 20...60mA
Number of channels: 1
Operating voltage: 1.2...18V DC
Integrated circuit features: linear dimming
Kind of integrated circuit: current regulator; LED driver
Type of integrated circuit: driver
Case: SOT343
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
285+0.25 EUR
325+0.22 EUR
388+0.18 EUR
459+0.16 EUR
Mindestbestellmenge: 228
Im Einkaufswagen  Stück im Wert von  UAH
IR2114SSPBF IR2114SSPBF.pdf
IR2114SSPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-/low-side,gate driver; SSOP24
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge
Mounting: SMD
Case: SSOP24
Operating temperature: -40...125°C
Output current: -1.5...1A
Turn-off time: 440ns
Turn-on time: 440ns
Number of channels: 2
Power: 1.5W
Supply voltage: 10.4...20V DC
Voltage class: 0.6/1.2kV
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.59 EUR
Mindestbestellmenge: 9
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BC847BE6327HTSA1 bc847_8_9_bc850.pdf
BC847BE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 803 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
715+0.1 EUR
803+0.089 EUR
Mindestbestellmenge: 715
Im Einkaufswagen  Stück im Wert von  UAH
IRFB3006GPBF irfb3006gpbf.pdf
IRFB3006GPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ICL8001GXUMA1 ICL8001G-DTE.pdf
ICL8001GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; flyback; PFC controller,SMPS controller,LED driver
Type of integrated circuit: driver
Topology: flyback
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Case: PG-DSO-8
Number of channels: 1
Mounting: SMD
Operating voltage: 10.5...26V DC
Integrated circuit features: phase-cut dimming; soft-start function
auf Bestellung 117 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
54+1.34 EUR
61+1.19 EUR
67+1.07 EUR
100+1.02 EUR
Mindestbestellmenge: 54
Im Einkaufswagen  Stück im Wert von  UAH
IHW40N135R5XKSA1 Infineon-IHW40N135R5-DS-v02_02-EN.pdf?fileId=5546d462636cc8fb0163b0fe63f5326a
IHW40N135R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.35kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 40A
Power dissipation: 197W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 305nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 0.5µs
Technology: TRENCHSTOP™ RC
auf Bestellung 64 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.56 EUR
19+3.88 EUR
24+3.02 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
IRS25401PBF irs25401pbf.pdf
IRS25401PBF
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; buck; high-/low-side,LED driver; DIP8; -700÷500mA; 1W
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: high-/low-side; LED driver
Case: DIP8
Output current: -700...500mA
Number of channels: 2
Mounting: THT
Operating temperature: -25...125°C
Kind of package: tube
Supply voltage: 8...16.6V DC
Voltage class: 200V
Turn-off time: 180ns
Turn-on time: 320ns
Power: 1W
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.89 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
IPP048N12N3GXKSA1 IPP048N12N3G-DTE.pdf
IPP048N12N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO220-3
Mounting: THT
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO220-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 4.8mΩ
Gate-source voltage: ±20V
Drain current: 120A
Power dissipation: 300W
Drain-source voltage: 120V
auf Bestellung 522 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.63 EUR
18+4.05 EUR
50+2.72 EUR
100+2.43 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
IPP147N12N3GXKSA1 IPP147N12N3G-DTE.pdf
IPP147N12N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 56A; 107W; PG-TO220-3
Mounting: THT
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO220-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 14.7mΩ
Gate-source voltage: ±20V
Drain current: 56A
Power dissipation: 107W
Drain-source voltage: 120V
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
39+1.83 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
IPP114N12N3GXKSA1 IPP114N12N3G-DTE.pdf
IPP114N12N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 75A; 136W; PG-TO220-3
Mounting: THT
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO220-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 11.4mΩ
Gate-source voltage: ±20V
Drain current: 75A
Power dissipation: 136W
Drain-source voltage: 120V
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.17 EUR
38+1.89 EUR
50+1.47 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
IRFR4620TRLPBF irfr4620pbf.pdf
IRFR4620TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; 144W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Power dissipation: 144W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 2176 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.62 EUR
39+1.84 EUR
47+1.54 EUR
53+1.36 EUR
100+1.2 EUR
250+1.04 EUR
500+0.94 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4020PBFXKMA1 infineon-irfb4020-datasheet-en.pdf?fileId=5546d462533600a4015356158ffd1e05
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT5405E6327HTSA1 BAT5404E6327HTSA1.pdf
BAT5405E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 230mW
Case: SOT23
Mounting: SMD
Type of diode: Schottky switching
Load current: 0.2A
Power dissipation: 0.23W
Max. forward impulse current: 0.6A
Max. forward voltage: 0.8V
Max. off-state voltage: 30V
Semiconductor structure: common cathode; double
auf Bestellung 4542 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
676+0.11 EUR
725+0.099 EUR
884+0.081 EUR
966+0.074 EUR
1025+0.07 EUR
Mindestbestellmenge: 556
Im Einkaufswagen  Stück im Wert von  UAH
IKP30N65H5XKSA1 IKP30N65H5-DTE.pdf
IKP30N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 36A; 188W; TO220-3; H5
Type of transistor: IGBT
Power dissipation: 188W
Case: TO220-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Collector-emitter voltage: 650V
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 36A
Pulsed collector current: 90A
Produkt ist nicht verfügbar
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IPB042N10N3GATMA1 IPB042N10N3G-DTE.pdf
IPB042N10N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BFP460H6327XTSA1 Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920
BFP460H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 70mA; 0.23W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.23W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Collector current: 70mA
Collector-emitter voltage: 4.5V
Current gain: 90...160
Frequency: 22GHz
Kind of transistor: RF
Technology: SIEGET™
auf Bestellung 2945 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
218+0.33 EUR
272+0.26 EUR
307+0.23 EUR
355+0.2 EUR
391+0.18 EUR
424+0.17 EUR
463+0.15 EUR
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