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BSP297H6327XTSA1 BSP297H6327XTSA1 INFINEON TECHNOLOGIES BSP297H6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.66A; 1.8W; SOT223
Mounting: SMD
Drain current: 0.66A
Gate-source voltage: ±20V
Drain-source voltage: 200V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SIPMOS™
Case: SOT223
On-state resistance: 1.8Ω
Power dissipation: 1.8W
auf Bestellung 641 Stücke:
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77+0.93 EUR
99+0.73 EUR
123+0.58 EUR
139+0.52 EUR
200+0.45 EUR
500+0.4 EUR
Mindestbestellmenge: 77
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BSP296NH6433XTMA1 INFINEON TECHNOLOGIES BSP296N_rev2+0.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30433dd58def013dd5af675d001f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.2A; 1.8W; SOT223
Mounting: SMD
Drain current: 1.2A
Drain-source voltage: 100V
Application: automotive industry
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: SOT223
Gate charge: 4.5nC
On-state resistance: 329mΩ
Power dissipation: 1.8W
Produkt ist nicht verfügbar
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HYWBSP295H6327XTSA1 INFINEON TECHNOLOGIES Category: Unclassified
Description: HYWBSP295H6327XTSA1
auf Bestellung 30000 Stücke:
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2000+0.31 EUR
Mindestbestellmenge: 2000
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IGW40T120FKSA1 IGW40T120FKSA1 INFINEON TECHNOLOGIES IGW40T120.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 270W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™
auf Bestellung 82 Stücke:
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9+8.52 EUR
10+7.52 EUR
30+6.76 EUR
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BC817K40WH6327XTSA1 INFINEON TECHNOLOGIES Infineon-BC817KSERIES_BC818KSERIES-DS-v01_01-en-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7f2a768a017f541639624faa Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 500mA; 250mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SC70; SOT323
Current gain: 250
Mounting: SMD
Frequency: 170MHz
Application: automotive industry
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IPB073N15N5ATMA1 IPB073N15N5ATMA1 INFINEON TECHNOLOGIES IPB073N15N5.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 81A; 214W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 81A
Power dissipation: 214W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Gate charge: 49nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BAS28E6327HTSA1 BAS28E6327HTSA1 INFINEON TECHNOLOGIES BAS28E6327HTSA1.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SOT143; Ufmax: 1.25V; 330mW
Mounting: SMD
Case: SOT143
Kind of package: reel; tape
Load current: 0.2A
Type of diode: switching
Power dissipation: 0.33W
Max. forward voltage: 1.25V
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 85V
Reverse recovery time: 4ns
Semiconductor structure: double independent
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ICE1HS01G1XUMA1 ICE1HS01G1XUMA1 INFINEON TECHNOLOGIES ICE1HS01G-1.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 50÷609kHz; PG-DSO-8
Type of integrated circuit: PMIC
Operating voltage: 10.2...18V DC
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Application: for LCD displays; SMPS
Frequency: 50...609kHz
Kind of integrated circuit: resonant mode controller
Topology: push-pull
Produkt ist nicht verfügbar
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BC817SUE6327HTSA1 BC817SUE6327HTSA1 INFINEON TECHNOLOGIES BC817UE6327.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 1W; SC74
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 1W
Case: SC74
Mounting: SMD
Frequency: 170MHz
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126+0.57 EUR
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SPP04N80C3 SPP04N80C3 INFINEON TECHNOLOGIES SPP04N80C3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; 63W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Power dissipation: 63W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 244 Stücke:
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35+2.04 EUR
40+1.82 EUR
44+1.63 EUR
50+1.54 EUR
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SPD04N80C3ATMA1 INFINEON TECHNOLOGIES Infineon-SPD04N80C3-DS-v02_92-en.pdf?fileId=db3a30433f12d084013f1a316bac1952 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.5A; Idm: 12A; 63W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.5A
Pulsed drain current: 12A
Power dissipation: 63W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: SMD
Kind of channel: enhancement
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IHW40N120R5XKSA1 IHW40N120R5XKSA1 INFINEON TECHNOLOGIES IHW40N120R5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 197W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 440ns
Technology: TRENCHSTOP™ RC
auf Bestellung 114 Stücke:
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19+3.88 EUR
22+3.26 EUR
28+2.65 EUR
30+2.46 EUR
31+2.35 EUR
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BSP149H6906XTSA1 BSP149H6906XTSA1 INFINEON TECHNOLOGIES Infineon-BSP149-DS-v02_01-en.pdf?fileId=db3a30433c1a8752013c1fcbb815397c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 200V; 0.53A; Idm: 2.6A
Type of transistor: N-MOSFET
Technology: SIPMOS®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.53A
Pulsed drain current: 2.6A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: depletion
Produkt ist nicht verfügbar
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PVI1050NSPBF PVI1050NSPBF INFINEON TECHNOLOGIES Infineon-PVI1050N-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801607b6ff00c5cca Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 2.5kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Insulation voltage: 2.5kV
Case: Gull wing 8
Turn-on time: 0.3ms
Manufacturer series: PVI-NPbF
Turn-off time: 220µs
Kind of output: photodiode
Produkt ist nicht verfügbar
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IRLB3036PBF IRLB3036PBF INFINEON TECHNOLOGIES irlb3036pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 91nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 40 Stücke:
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28+2.56 EUR
29+2.47 EUR
32+2.29 EUR
34+2.16 EUR
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BFN26E6327 BFN26E6327 INFINEON TECHNOLOGIES BFN26.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.2A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.2A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 70MHz
auf Bestellung 338 Stücke:
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338+0.21 EUR
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IRG4PH20KDPBF IRG4PH20KDPBF INFINEON TECHNOLOGIES irg4ph20kdpbf.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 11A; 60W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 11A
Power dissipation: 60W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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AUIRG4PH50S AUIRG4PH50S INFINEON TECHNOLOGIES auirg4ph50s.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 81A; 217W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 81A
Power dissipation: 217W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 99A
Mounting: THT
Gate charge: 227nC
Kind of package: tube
Produkt ist nicht verfügbar
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BGS12SN6E6327XTSA1 INFINEON TECHNOLOGIES Infineon-BGS12SN6-DS-v01_02-en.pdf?fileId=db3a30433f1b26e8013f2db58bc03856 Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; Ch: 2; TSNP6; 1.8÷3.5VDC; 0.1÷6GHz
Type of integrated circuit: RF switch
Output configuration: SPDT
Number of channels: 2
Case: TSNP6
Supply voltage: 1.8...3.5V DC
Mounting: SMD
Bandwidth: 0.1...6GHz
Application: telecommunication
Produkt ist nicht verfügbar
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IRF2805PBF IRF2805PBF INFINEON TECHNOLOGIES irf2805.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 175A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 175A
Power dissipation: 330W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 150nC
On-state resistance: 4.7mΩ
auf Bestellung 1038 Stücke:
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32+2.3 EUR
59+1.23 EUR
61+1.17 EUR
64+1.13 EUR
500+1.06 EUR
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BAS7004E6327HTSA1 BAS7004E6327HTSA1 INFINEON TECHNOLOGIES BAS7004E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series
Max. forward voltage: 1V
Power dissipation: 0.25W
Max. forward impulse current: 0.1A
auf Bestellung 2900 Stücke:
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209+0.34 EUR
291+0.25 EUR
505+0.14 EUR
637+0.11 EUR
749+0.096 EUR
1000+0.085 EUR
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IRFI3205PBF IRFI3205PBF INFINEON TECHNOLOGIES irfi3205.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 48W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 113.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 50 Stücke:
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24+3.06 EUR
33+2.17 EUR
37+1.97 EUR
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SPA11N80C3XKSA2 INFINEON TECHNOLOGIES SPP_A11N80C3_Rev[1].2.6.pdf?folderId=db3a3043163797a6011638491238009b&fileId=db3a3043163797a60116385b2fcc00ec Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 34W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 34W
Case: TO220-3
On-state resistance: 0.45Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 85nC
Produkt ist nicht verfügbar
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IRLMS6802TRPBF IRLMS6802TRPBF INFINEON TECHNOLOGIES irlms6802pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.6A; 2W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.6A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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BC857CWH6327XTSA1 INFINEON TECHNOLOGIES Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar
Type of transistor: PNP
Polarisation: bipolar
Mounting: SMD
Produkt ist nicht verfügbar
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BC857CE6433HTMA1 INFINEON TECHNOLOGIES Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar
Type of transistor: PNP
Polarisation: bipolar
Mounting: SMD
Produkt ist nicht verfügbar
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TLE493DW2B6A0HTSA1 INFINEON TECHNOLOGIES TLE493D-W2B6_v1.2_4-9-19.pdf Category: Hall Sensors
Description: Sensor: Hall; programmable; TSOP6; SMT; Temp: -40÷125°C; OUT: I2C
Type of sensor: Hall
Kind of sensor: programmable
Case: TSOP6
Mounting: SMT
Operating temperature: -40...125°C
Output configuration: I2C
auf Bestellung 3000 Stücke:
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3000+1.39 EUR
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IPD047N03LF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPD047N03LF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192b89c5f296484 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 71A; 65W; DPAK,TO252
Polarisation: unipolar
On-state resistance: 4.7mΩ
Drain-source voltage: 30V
Drain current: 71A
Power dissipation: 65W
Case: DPAK; TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
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IGW30N60TPXKSA1 IGW30N60TPXKSA1 INFINEON TECHNOLOGIES IGW30N60TP.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 38A; 100W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 38A
Gate-emitter voltage: ±20V
Power dissipation: 100W
Pulsed collector current: 90A
Collector-emitter voltage: 600V
Technology: TRENCHSTOP™
Turn-on time: 38ns
Gate charge: 130nC
Turn-off time: 279ns
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IRLML2246TRPBF IRLML2246TRPBF INFINEON TECHNOLOGIES irlml2246pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.6A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.6A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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IPA80R900P7XKSA1 IPA80R900P7XKSA1 INFINEON TECHNOLOGIES IPA80R900P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 27W; TO220FP; ESD
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.6A
Gate charge: 17nC
On-state resistance: 0.75Ω
Gate-source voltage: ±20V
Power dissipation: 27W
Technology: CoolMOS™ P7
auf Bestellung 61 Stücke:
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38+1.89 EUR
61+1.17 EUR
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IPN80R900P7ATMA1 IPN80R900P7ATMA1 INFINEON TECHNOLOGIES IPN80R900P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 7W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 0.9Ω
Drain current: 3.9A
Power dissipation: 7W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
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IRFP9140NPBF IRFP9140NPBF INFINEON TECHNOLOGIES irfp9140n.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -21A; 120W; TO247AC
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -21A
Power dissipation: 120W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.117Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 64.7nC
Technology: HEXFET®
Kind of package: tube
auf Bestellung 523 Stücke:
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31+2.36 EUR
36+1.99 EUR
43+1.67 EUR
51+1.42 EUR
100+1.2 EUR
125+1.13 EUR
250+1.04 EUR
Mindestbestellmenge: 31
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IRF3007STRLPBF INFINEON TECHNOLOGIES irf3007spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 62A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 62A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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IRF3415STRLPBF IRF3415STRLPBF INFINEON TECHNOLOGIES irf3415spbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Power dissipation: 200W
Case: TO262
Mounting: THT
Kind of package: reel
Kind of channel: enhancement
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IRFR9120NTRPBF IRFR9120NTRPBF INFINEON TECHNOLOGIES irfr9120npbf.pdf description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -6.5A; 39W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -6.5A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 2156 Stücke:
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50+1.46 EUR
76+0.95 EUR
112+0.64 EUR
200+0.57 EUR
500+0.5 EUR
Mindestbestellmenge: 50
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S25FL128LAGMFM010 S25FL128LAGMFM010 INFINEON TECHNOLOGIES S25FL.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; SPI; 133MHz; 2.7÷3.6V; SO8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
auf Bestellung 85 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.32 EUR
24+3.09 EUR
25+2.87 EUR
Mindestbestellmenge: 22
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BSC059N04LS6ATMA1 BSC059N04LS6ATMA1 INFINEON TECHNOLOGIES BSC059N04LS6ATMA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 38W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 38W
Case: PG-TDSON-8 FL
On-state resistance: 5.9mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 9.4nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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IRF9388TRPBF INFINEON TECHNOLOGIES irf9388pbf.pdf?fileId=5546d462533600a40153561170191dad Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 30V; 12A; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF9389TRPBF IRF9389TRPBF INFINEON TECHNOLOGIES IRF9389TRPBF.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.8/-4.6A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6.8/-4.6A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 27/64mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3987 Stücke:
Lieferzeit 14-21 Tag (e)
91+0.79 EUR
125+0.57 EUR
180+0.4 EUR
211+0.34 EUR
250+0.31 EUR
Mindestbestellmenge: 91
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IRF9310TRPBF IRF9310TRPBF INFINEON TECHNOLOGIES irf9310pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -20A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 25 Stücke:
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25+2.86 EUR
Mindestbestellmenge: 25
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IPT60R065S7XTMA1 IPT60R065S7XTMA1 INFINEON TECHNOLOGIES Infineon-IPT60R065S7-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bc253e7b6779a Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 8A; Idm: 126A
Type of transistor: N-MOSFET
Technology: CoolMOS™ S7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 126A
Power dissipation: 167W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 137mΩ
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSS159NH6906XTSA1 INFINEON TECHNOLOGIES Infineon-BSS159N-DS-v02_02-en.pdf?fileId=db3a304330f68606013108d8b2230036 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 230mA; 360mW; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Mounting: SMD
Polarisation: unipolar
Drain current: 0.23A
Power dissipation: 0.36W
On-state resistance: 1.7Ω
Drain-source voltage: 60V
Application: automotive industry
Case: SOT23
Produkt ist nicht verfügbar
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6EDL04N02PR 6EDL04N02PR INFINEON TECHNOLOGIES 6EDL04N02PR.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET three-phase bridge; EiceDRIVER™; TSSOP28; Ch: 6
Type of integrated circuit: driver
Topology: MOSFET three-phase bridge
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Technology: EiceDRIVER™
Case: TSSOP28
Output current: -0.375...0.24A
Number of channels: 6
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 10...17.5V
Voltage class: 200V
Protection: anti-overload OPP; undervoltage UVP
Produkt ist nicht verfügbar
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CY8CKIT-143A
+1
 		CY8CKIT-143A INFINEON TECHNOLOGIES download Category: Development kits - others
Description: Dev.kit: Cypress; Bluetooth: 4.0 EDR
Type of development kit: Cypress
Bluetooth version: 4.0 EDR
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
4+20.49 EUR
Mindestbestellmenge: 4
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CY8CKIT-042-BLE-A
+1
 		CY8CKIT-042-BLE-A INFINEON TECHNOLOGIES Infineon-CY8CKIT-042-BLE-A_Bluetooth_Low_Energy_Pioneer_Kit_Release_Notes-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0efc91fe12bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Development kits - others
Description: Dev.kit: Cypress; evaluation board; Bluetooth: 4.2,BLE
Type of development kit: Cypress
Kind of connector: USB B mini
Kind of module: evaluation board
Bluetooth version: 4.2; BLE
Produkt ist nicht verfügbar
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CY8CKIT-005 CY8CKIT-005 INFINEON TECHNOLOGIES Infineon-CY8CKIT-005_MiniProg4_Quick_Start_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0f0123eb1859&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Development kits - others
Description: Dev.kit: Cypress
Type of development kit: Cypress
Kind of connector: USB C
Interface: JTAG; SWD
Produkt ist nicht verfügbar
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CY8CKIT-002 INFINEON TECHNOLOGIES download Category: Development kits - others
Description: Dev.kit: Cypress
Type of development kit: Cypress
Kind of connector: USB B mini
Interface: I2C; JTAG; SWD
Produkt ist nicht verfügbar
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CY8CKIT-059
+1
 		CY8CKIT-059 INFINEON TECHNOLOGIES CY8CKIT_059.pdf Category: Development kits - others
Description: Dev.kit: Cypress; prototype board; Comp: CY8C5888LTI-LP097
Type of development kit: Cypress
Kind of connector: USB B micro
Components: CY8C5888LTI-LP097
Interface: JTAG; SWD; USB
Kind of architecture: ARM; Cortex M3
Programmers and development kits features: integrated programmer/debugger; microcontroller I/O lines lead to goldpin connectors
Kit contents: prototype board
Produkt ist nicht verfügbar
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CY8CKIT-145-40xx CY8CKIT-145-40xx INFINEON TECHNOLOGIES Infineon-CY8CKIT-145-40XX_PSoC_4000S_Prototyping_Kit_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0efccdd91344&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Development kits - others
Description: Dev.kit: Cypress; prototype board
Type of development kit: Cypress
Kind of connector: USB
Kind of module: prototype board
Produkt ist nicht verfügbar
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CY8CKIT-062S2-43012 INFINEON TECHNOLOGIES Infineon-CY8CKIT-062S2-43012_PSoC_62S2_Wi-Fi_BT_Pioneer_Kit_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0f01c8f11927&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Development kits - Unclassified
Description: CY8CKIT-062S2-43012
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
3+213.56 EUR
Mindestbestellmenge: 3
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BSC080N03MSGATMA1 BSC080N03MSGATMA1 INFINEON TECHNOLOGIES BSC080N03MSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 53A; 35W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 53A
Power dissipation: 35W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 1067 Stücke:
Lieferzeit 14-21 Tag (e)
107+0.67 EUR
144+0.5 EUR
155+0.46 EUR
250+0.44 EUR
500+0.4 EUR
1000+0.39 EUR
Mindestbestellmenge: 107
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IR2102SPBF IR2102SPBF INFINEON TECHNOLOGIES ir2101_2102.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 160ns
Turn-off time: 150ns
Produkt ist nicht verfügbar
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IRFR15N20DTRPBF IRFR15N20DTRPBF INFINEON TECHNOLOGIES IRFR15N20DTRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 17A; 140W; DPAK
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain current: 17A
Power dissipation: 140W
Drain-source voltage: 200V
Kind of package: reel
Case: DPAK
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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BCX53H6327XTSA1 BCX53H6327XTSA1 INFINEON TECHNOLOGIES BCX53.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 2W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Frequency: 125MHz
auf Bestellung 122 Stücke:
Lieferzeit 14-21 Tag (e)
122+0.59 EUR
Mindestbestellmenge: 122
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IRL2203NSTRLPBF IRL2203NSTRLPBF INFINEON TECHNOLOGIES irl2203nspbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 116A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 116A
Power dissipation: 170W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRLL2705TRPBF IRLL2705TRPBF INFINEON TECHNOLOGIES irll2705pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.8A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 3.8A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 4849 Stücke:
Lieferzeit 14-21 Tag (e)
74+0.97 EUR
115+0.62 EUR
152+0.47 EUR
185+0.39 EUR
217+0.33 EUR
243+0.29 EUR
500+0.28 EUR
Mindestbestellmenge: 74
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IRLL2703TRPBF IRLL2703TRPBF INFINEON TECHNOLOGIES IRSDS06555-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 16A; 1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.1A
Pulsed drain current: 16A
Power dissipation: 1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 45mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRLML2803TRPBF IRLML2803TRPBF INFINEON TECHNOLOGIES irlml2803.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.2A; 0.4W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.2A
Power dissipation: 0.4W
Case: SOT23
On-state resistance: 0.3Ω
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 29976 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.4 EUR
247+0.29 EUR
358+0.2 EUR
421+0.17 EUR
521+0.14 EUR
603+0.12 EUR
1000+0.1 EUR
3000+0.086 EUR
6000+0.079 EUR
Mindestbestellmenge: 179
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IRLML5103TRPBF IRLML5103TRPBF INFINEON TECHNOLOGIES irlml5103pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.61A; 0.54W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.61A
Power dissipation: 0.54W
Case: SOT23
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 4394 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.4 EUR
248+0.29 EUR
447+0.16 EUR
667+0.11 EUR
1000+0.092 EUR
3000+0.09 EUR
Mindestbestellmenge: 179
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BSP297H6327XTSA1 BSP297H6327XTSA1.pdf
BSP297H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.66A; 1.8W; SOT223
Mounting: SMD
Drain current: 0.66A
Gate-source voltage: ±20V
Drain-source voltage: 200V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SIPMOS™
Case: SOT223
On-state resistance: 1.8Ω
Power dissipation: 1.8W
auf Bestellung 641 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
77+0.93 EUR
99+0.73 EUR
123+0.58 EUR
139+0.52 EUR
200+0.45 EUR
500+0.4 EUR
Mindestbestellmenge: 77
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BSP296NH6433XTMA1 BSP296N_rev2+0.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30433dd58def013dd5af675d001f
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.2A; 1.8W; SOT223
Mounting: SMD
Drain current: 1.2A
Drain-source voltage: 100V
Application: automotive industry
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: SOT223
Gate charge: 4.5nC
On-state resistance: 329mΩ
Power dissipation: 1.8W
Produkt ist nicht verfügbar
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HYWBSP295H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Unclassified
Description: HYWBSP295H6327XTSA1
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2000+0.31 EUR
Mindestbestellmenge: 2000
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IGW40T120FKSA1 IGW40T120.pdf
IGW40T120FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 270W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™
auf Bestellung 82 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.52 EUR
10+7.52 EUR
30+6.76 EUR
Mindestbestellmenge: 9
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BC817K40WH6327XTSA1 Infineon-BC817KSERIES_BC818KSERIES-DS-v01_01-en-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7f2a768a017f541639624faa
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 500mA; 250mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SC70; SOT323
Current gain: 250
Mounting: SMD
Frequency: 170MHz
Application: automotive industry
Produkt ist nicht verfügbar
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IPB073N15N5ATMA1 IPB073N15N5.pdf
IPB073N15N5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 81A; 214W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 81A
Power dissipation: 214W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Gate charge: 49nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BAS28E6327HTSA1 BAS28E6327HTSA1.pdf
BAS28E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SOT143; Ufmax: 1.25V; 330mW
Mounting: SMD
Case: SOT143
Kind of package: reel; tape
Load current: 0.2A
Type of diode: switching
Power dissipation: 0.33W
Max. forward voltage: 1.25V
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 85V
Reverse recovery time: 4ns
Semiconductor structure: double independent
Produkt ist nicht verfügbar
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ICE1HS01G1XUMA1 ICE1HS01G-1.pdf
ICE1HS01G1XUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 50÷609kHz; PG-DSO-8
Type of integrated circuit: PMIC
Operating voltage: 10.2...18V DC
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Application: for LCD displays; SMPS
Frequency: 50...609kHz
Kind of integrated circuit: resonant mode controller
Topology: push-pull
Produkt ist nicht verfügbar
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BC817SUE6327HTSA1 BC817UE6327.pdf
BC817SUE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 1W; SC74
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 1W
Case: SC74
Mounting: SMD
Frequency: 170MHz
auf Bestellung 126 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
126+0.57 EUR
Mindestbestellmenge: 126
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SPP04N80C3 SPP04N80C3.pdf
SPP04N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; 63W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Power dissipation: 63W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 244 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.04 EUR
40+1.82 EUR
44+1.63 EUR
50+1.54 EUR
Mindestbestellmenge: 35
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SPD04N80C3ATMA1 Infineon-SPD04N80C3-DS-v02_92-en.pdf?fileId=db3a30433f12d084013f1a316bac1952
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.5A; Idm: 12A; 63W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.5A
Pulsed drain current: 12A
Power dissipation: 63W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IHW40N120R5XKSA1 IHW40N120R5.pdf
IHW40N120R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 197W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 440ns
Technology: TRENCHSTOP™ RC
auf Bestellung 114 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.88 EUR
22+3.26 EUR
28+2.65 EUR
30+2.46 EUR
31+2.35 EUR
Mindestbestellmenge: 19
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BSP149H6906XTSA1 Infineon-BSP149-DS-v02_01-en.pdf?fileId=db3a30433c1a8752013c1fcbb815397c
BSP149H6906XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 200V; 0.53A; Idm: 2.6A
Type of transistor: N-MOSFET
Technology: SIPMOS®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.53A
Pulsed drain current: 2.6A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: depletion
Produkt ist nicht verfügbar
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PVI1050NSPBF Infineon-PVI1050N-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801607b6ff00c5cca
PVI1050NSPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 2.5kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Insulation voltage: 2.5kV
Case: Gull wing 8
Turn-on time: 0.3ms
Manufacturer series: PVI-NPbF
Turn-off time: 220µs
Kind of output: photodiode
Produkt ist nicht verfügbar
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IRLB3036PBF irlb3036pbf.pdf
IRLB3036PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 91nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.56 EUR
29+2.47 EUR
32+2.29 EUR
34+2.16 EUR
Mindestbestellmenge: 28
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BFN26E6327 BFN26.pdf
BFN26E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.2A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.2A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 70MHz
auf Bestellung 338 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
338+0.21 EUR
Mindestbestellmenge: 338
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IRG4PH20KDPBF irg4ph20kdpbf.pdf
IRG4PH20KDPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 11A; 60W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 11A
Power dissipation: 60W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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AUIRG4PH50S auirg4ph50s.pdf
AUIRG4PH50S
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 81A; 217W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 81A
Power dissipation: 217W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 99A
Mounting: THT
Gate charge: 227nC
Kind of package: tube
Produkt ist nicht verfügbar
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BGS12SN6E6327XTSA1 Infineon-BGS12SN6-DS-v01_02-en.pdf?fileId=db3a30433f1b26e8013f2db58bc03856
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; Ch: 2; TSNP6; 1.8÷3.5VDC; 0.1÷6GHz
Type of integrated circuit: RF switch
Output configuration: SPDT
Number of channels: 2
Case: TSNP6
Supply voltage: 1.8...3.5V DC
Mounting: SMD
Bandwidth: 0.1...6GHz
Application: telecommunication
Produkt ist nicht verfügbar
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IRF2805PBF description irf2805.pdf
IRF2805PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 175A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 175A
Power dissipation: 330W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 150nC
On-state resistance: 4.7mΩ
auf Bestellung 1038 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.3 EUR
59+1.23 EUR
61+1.17 EUR
64+1.13 EUR
500+1.06 EUR
Mindestbestellmenge: 32
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BAS7004E6327HTSA1 BAS7004E6327HTSA1.pdf
BAS7004E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series
Max. forward voltage: 1V
Power dissipation: 0.25W
Max. forward impulse current: 0.1A
auf Bestellung 2900 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
291+0.25 EUR
505+0.14 EUR
637+0.11 EUR
749+0.096 EUR
1000+0.085 EUR
Mindestbestellmenge: 209
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IRFI3205PBF description irfi3205.pdf
IRFI3205PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 48W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 113.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.06 EUR
33+2.17 EUR
37+1.97 EUR
Mindestbestellmenge: 24
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SPA11N80C3XKSA2 SPP_A11N80C3_Rev[1].2.6.pdf?folderId=db3a3043163797a6011638491238009b&fileId=db3a3043163797a60116385b2fcc00ec
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 34W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 34W
Case: TO220-3
On-state resistance: 0.45Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 85nC
Produkt ist nicht verfügbar
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IRLMS6802TRPBF irlms6802pbf.pdf
IRLMS6802TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.6A; 2W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.6A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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BC857CWH6327XTSA1 Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar
Type of transistor: PNP
Polarisation: bipolar
Mounting: SMD
Produkt ist nicht verfügbar
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BC857CE6433HTMA1 Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar
Type of transistor: PNP
Polarisation: bipolar
Mounting: SMD
Produkt ist nicht verfügbar
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TLE493DW2B6A0HTSA1 TLE493D-W2B6_v1.2_4-9-19.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; programmable; TSOP6; SMT; Temp: -40÷125°C; OUT: I2C
Type of sensor: Hall
Kind of sensor: programmable
Case: TSOP6
Mounting: SMT
Operating temperature: -40...125°C
Output configuration: I2C
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+1.39 EUR
Mindestbestellmenge: 3000
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IPD047N03LF2SATMA1 Infineon-IPD047N03LF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192b89c5f296484
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 71A; 65W; DPAK,TO252
Polarisation: unipolar
On-state resistance: 4.7mΩ
Drain-source voltage: 30V
Drain current: 71A
Power dissipation: 65W
Case: DPAK; TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Produkt ist nicht verfügbar
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IGW30N60TPXKSA1 IGW30N60TP.pdf
IGW30N60TPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 38A; 100W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 38A
Gate-emitter voltage: ±20V
Power dissipation: 100W
Pulsed collector current: 90A
Collector-emitter voltage: 600V
Technology: TRENCHSTOP™
Turn-on time: 38ns
Gate charge: 130nC
Turn-off time: 279ns
Produkt ist nicht verfügbar
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IRLML2246TRPBF irlml2246pbf.pdf
IRLML2246TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.6A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.6A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IPA80R900P7XKSA1 IPA80R900P7.pdf
IPA80R900P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 27W; TO220FP; ESD
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.6A
Gate charge: 17nC
On-state resistance: 0.75Ω
Gate-source voltage: ±20V
Power dissipation: 27W
Technology: CoolMOS™ P7
auf Bestellung 61 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.89 EUR
61+1.17 EUR
Mindestbestellmenge: 38
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IPN80R900P7ATMA1 IPN80R900P7.pdf
IPN80R900P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 7W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 0.9Ω
Drain current: 3.9A
Power dissipation: 7W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IRFP9140NPBF irfp9140n.pdf
IRFP9140NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -21A; 120W; TO247AC
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -21A
Power dissipation: 120W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.117Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 64.7nC
Technology: HEXFET®
Kind of package: tube
auf Bestellung 523 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.36 EUR
36+1.99 EUR
43+1.67 EUR
51+1.42 EUR
100+1.2 EUR
125+1.13 EUR
250+1.04 EUR
Mindestbestellmenge: 31
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IRF3007STRLPBF irf3007spbf.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 62A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 62A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF3415STRLPBF irf3415spbf.pdf
IRF3415STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Power dissipation: 200W
Case: TO262
Mounting: THT
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR9120NTRPBF description irfr9120npbf.pdf
IRFR9120NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -6.5A; 39W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -6.5A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 2156 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.46 EUR
76+0.95 EUR
112+0.64 EUR
200+0.57 EUR
500+0.5 EUR
Mindestbestellmenge: 50
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S25FL128LAGMFM010 S25FL.pdf
S25FL128LAGMFM010
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; SPI; 133MHz; 2.7÷3.6V; SO8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
auf Bestellung 85 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.32 EUR
24+3.09 EUR
25+2.87 EUR
Mindestbestellmenge: 22
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BSC059N04LS6ATMA1 BSC059N04LS6ATMA1.pdf
BSC059N04LS6ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 38W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 38W
Case: PG-TDSON-8 FL
On-state resistance: 5.9mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 9.4nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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IRF9388TRPBF irf9388pbf.pdf?fileId=5546d462533600a40153561170191dad
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 30V; 12A; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF9389TRPBF IRF9389TRPBF.pdf
IRF9389TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.8/-4.6A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6.8/-4.6A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 27/64mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3987 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
91+0.79 EUR
125+0.57 EUR
180+0.4 EUR
211+0.34 EUR
250+0.31 EUR
Mindestbestellmenge: 91
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IRF9310TRPBF irf9310pbf.pdf
IRF9310TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -20A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.86 EUR
Mindestbestellmenge: 25
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IPT60R065S7XTMA1 Infineon-IPT60R065S7-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bc253e7b6779a
IPT60R065S7XTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 8A; Idm: 126A
Type of transistor: N-MOSFET
Technology: CoolMOS™ S7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 126A
Power dissipation: 167W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 137mΩ
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSS159NH6906XTSA1 Infineon-BSS159N-DS-v02_02-en.pdf?fileId=db3a304330f68606013108d8b2230036
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 230mA; 360mW; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Mounting: SMD
Polarisation: unipolar
Drain current: 0.23A
Power dissipation: 0.36W
On-state resistance: 1.7Ω
Drain-source voltage: 60V
Application: automotive industry
Case: SOT23
Produkt ist nicht verfügbar
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6EDL04N02PR 6EDL04N02PR.pdf
6EDL04N02PR
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET three-phase bridge; EiceDRIVER™; TSSOP28; Ch: 6
Type of integrated circuit: driver
Topology: MOSFET three-phase bridge
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Technology: EiceDRIVER™
Case: TSSOP28
Output current: -0.375...0.24A
Number of channels: 6
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 10...17.5V
Voltage class: 200V
Protection: anti-overload OPP; undervoltage UVP
Produkt ist nicht verfügbar
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CY8CKIT-143A download
CY8CKIT-143A
+1
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: Cypress; Bluetooth: 4.0 EDR
Type of development kit: Cypress
Bluetooth version: 4.0 EDR
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+20.49 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
CY8CKIT-042-BLE-A Infineon-CY8CKIT-042-BLE-A_Bluetooth_Low_Energy_Pioneer_Kit_Release_Notes-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0efc91fe12bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
CY8CKIT-042-BLE-A
+1
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: Cypress; evaluation board; Bluetooth: 4.2,BLE
Type of development kit: Cypress
Kind of connector: USB B mini
Kind of module: evaluation board
Bluetooth version: 4.2; BLE
Produkt ist nicht verfügbar
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CY8CKIT-005 Infineon-CY8CKIT-005_MiniProg4_Quick_Start_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0f0123eb1859&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8CKIT-005
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: Cypress
Type of development kit: Cypress
Kind of connector: USB C
Interface: JTAG; SWD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY8CKIT-002 download
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: Cypress
Type of development kit: Cypress
Kind of connector: USB B mini
Interface: I2C; JTAG; SWD
Produkt ist nicht verfügbar
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CY8CKIT-059 CY8CKIT_059.pdf
CY8CKIT-059
+1
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: Cypress; prototype board; Comp: CY8C5888LTI-LP097
Type of development kit: Cypress
Kind of connector: USB B micro
Components: CY8C5888LTI-LP097
Interface: JTAG; SWD; USB
Kind of architecture: ARM; Cortex M3
Programmers and development kits features: integrated programmer/debugger; microcontroller I/O lines lead to goldpin connectors
Kit contents: prototype board
Produkt ist nicht verfügbar
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CY8CKIT-145-40xx Infineon-CY8CKIT-145-40XX_PSoC_4000S_Prototyping_Kit_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0efccdd91344&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8CKIT-145-40xx
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: Cypress; prototype board
Type of development kit: Cypress
Kind of connector: USB
Kind of module: prototype board
Produkt ist nicht verfügbar
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CY8CKIT-062S2-43012 Infineon-CY8CKIT-062S2-43012_PSoC_62S2_Wi-Fi_BT_Pioneer_Kit_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0f01c8f11927&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - Unclassified
Description: CY8CKIT-062S2-43012
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+213.56 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
BSC080N03MSGATMA1 BSC080N03MSG-DTE.pdf
BSC080N03MSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 53A; 35W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 53A
Power dissipation: 35W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 1067 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
144+0.5 EUR
155+0.46 EUR
250+0.44 EUR
500+0.4 EUR
1000+0.39 EUR
Mindestbestellmenge: 107
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IR2102SPBF description ir2101_2102.pdf
IR2102SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 160ns
Turn-off time: 150ns
Produkt ist nicht verfügbar
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IRFR15N20DTRPBF IRFR15N20DTRPBF.pdf
IRFR15N20DTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 17A; 140W; DPAK
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain current: 17A
Power dissipation: 140W
Drain-source voltage: 200V
Kind of package: reel
Case: DPAK
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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BCX53H6327XTSA1 BCX53.pdf
BCX53H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 2W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Frequency: 125MHz
auf Bestellung 122 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
122+0.59 EUR
Mindestbestellmenge: 122
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IRL2203NSTRLPBF irl2203nspbf.pdf
IRL2203NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 116A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 116A
Power dissipation: 170W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRLL2705TRPBF irll2705pbf.pdf
IRLL2705TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.8A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 3.8A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 4849 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
74+0.97 EUR
115+0.62 EUR
152+0.47 EUR
185+0.39 EUR
217+0.33 EUR
243+0.29 EUR
500+0.28 EUR
Mindestbestellmenge: 74
Im Einkaufswagen  Stück im Wert von  UAH
IRLL2703TRPBF IRSDS06555-1.pdf?t.download=true&u=5oefqw
IRLL2703TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 16A; 1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.1A
Pulsed drain current: 16A
Power dissipation: 1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 45mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLML2803TRPBF irlml2803.pdf
IRLML2803TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.2A; 0.4W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.2A
Power dissipation: 0.4W
Case: SOT23
On-state resistance: 0.3Ω
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 29976 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
247+0.29 EUR
358+0.2 EUR
421+0.17 EUR
521+0.14 EUR
603+0.12 EUR
1000+0.1 EUR
3000+0.086 EUR
6000+0.079 EUR
Mindestbestellmenge: 179
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IRLML5103TRPBF irlml5103pbf.pdf
IRLML5103TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.61A; 0.54W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.61A
Power dissipation: 0.54W
Case: SOT23
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 4394 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
248+0.29 EUR
447+0.16 EUR
667+0.11 EUR
1000+0.092 EUR
3000+0.09 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
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