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IRF1405ZPBF IRF1405ZPBF INFINEON TECHNOLOGIES irf1405zpbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 150A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 150A
Power dissipation: 230W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRS21064PBF IRS21064PBF INFINEON TECHNOLOGIES irs2106.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Mounting: THT
Case: DIP14
Supply voltage: 10...20V DC
Operating temperature: -40...125°C
Number of channels: 2
Topology: MOSFET half-bridge
Kind of package: tube
Output current: -600...290mA
Turn-off time: 235ns
Turn-on time: 320ns
Power: 1.6W
Voltage class: 600V
auf Bestellung 51 Stücke:
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17+4.26 EUR
20+3.6 EUR
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IRS2106SPBF IRS2106SPBF INFINEON TECHNOLOGIES irs2106.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Operating temperature: -40...125°C
Mounting: SMD
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Case: SO8
Output current: -600...290mA
Turn-off time: 235ns
Turn-on time: 320ns
Power: 625mW
Supply voltage: 10...20V DC
Number of channels: 2
Voltage class: 600V
Kind of package: tube
Type of integrated circuit: driver
Produkt ist nicht verfügbar
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IRFB4115PBF IRFB4115PBF INFINEON TECHNOLOGIES IRFB4115.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 74A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 74A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 464 Stücke:
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24+3.09 EUR
26+2.8 EUR
28+2.62 EUR
33+2.2 EUR
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BCV47E6327 BCV47E6327 INFINEON TECHNOLOGIES BCV27E6327.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 0.5A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 170MHz
auf Bestellung 90 Stücke:
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90+0.8 EUR
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SPW47N60C3 SPW47N60C3 INFINEON TECHNOLOGIES SPW47N60C3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 47A; 415W; PG-TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 47A
Power dissipation: 415W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 303 Stücke:
Lieferzeit 14-21 Tag (e)
6+12.84 EUR
10+12.4 EUR
30+11.81 EUR
120+10.61 EUR
240+10.05 EUR
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SPW47N60CFDFKSA1 SPW47N60CFDFKSA1 INFINEON TECHNOLOGIES SPW47N60CFD.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29A; 417W; PG-TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29A
Power dissipation: 417W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 83mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
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IRFR024NTRPBF IRFR024NTRPBF INFINEON TECHNOLOGIES irfr024npbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 16A; 38W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 16A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 5904 Stücke:
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173+0.41 EUR
183+0.39 EUR
191+0.38 EUR
199+0.36 EUR
250+0.34 EUR
500+0.33 EUR
1000+0.3 EUR
2000+0.29 EUR
Mindestbestellmenge: 173
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IHW30N120R5XKSA1 IHW30N120R5XKSA1 INFINEON TECHNOLOGIES IHW30N120R5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 30A; 165W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 165W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 363ns
Technology: TRENCHSTOP™ RC
auf Bestellung 358 Stücke:
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19+3.83 EUR
27+2.67 EUR
30+2.42 EUR
31+2.37 EUR
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IAUC60N06S5L073ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC60N06S5L073-DataSheet-v01_01-EN.pdf?fileId=5546d4627a0b0c7b017a1eb4f9c26feb Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 168A; 52W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Case: PG-TDSON-8
Gate-source voltage: ±16V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 22.6nC
On-state resistance: 9.8mΩ
Power dissipation: 52W
Pulsed drain current: 168A
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IAUC60N06S5N074ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC60N06S5N074-DataSheet-v01_00-EN.pdf?fileId=5546d4627a0b0c7b017a1eb505e56fee Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 168A; 52W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Case: PG-TDSON-8
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 20nC
On-state resistance: 9mΩ
Power dissipation: 52W
Pulsed drain current: 168A
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IPA060N06NXKSA1 IPA060N06NXKSA1 INFINEON TECHNOLOGIES IPA060N06N-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 45A
Case: TO220FP
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 6mΩ
Power dissipation: 33W
Technology: OptiMOS™
Produkt ist nicht verfügbar
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IRF9Z24NPBF IRF9Z24NPBF INFINEON TECHNOLOGIES irf9z24n.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -12A; 45W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -12A
Power dissipation: 45W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 12.7nC
Technology: HEXFET®
Kind of package: tube
auf Bestellung 1900 Stücke:
Lieferzeit 14-21 Tag (e)
72+1 EUR
147+0.49 EUR
157+0.46 EUR
163+0.44 EUR
171+0.42 EUR
500+0.39 EUR
1000+0.37 EUR
Mindestbestellmenge: 72
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IRF9Z24NSTRLPBF INFINEON TECHNOLOGIES Infineon-IRF9Z24NS-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fee376ad063e Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -8.5A; Idm: -48A; 45W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -8.5A
Pulsed drain current: -48A
Power dissipation: 45W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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BAT6404E6327HTSA1 BAT6404E6327HTSA1 INFINEON TECHNOLOGIES BAT6402VH6327XTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.25A; 250mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: double series
Max. forward voltage: 0.75V
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
auf Bestellung 20560 Stücke:
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715+0.1 EUR
758+0.094 EUR
782+0.092 EUR
955+0.075 EUR
1097+0.065 EUR
1158+0.062 EUR
3000+0.057 EUR
Mindestbestellmenge: 715
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BSS127H6327XTSA2 BSS127H6327XTSA2 INFINEON TECHNOLOGIES BSS127H6327XTSA2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: SIPMOS™
Drain current: 21mA
Power dissipation: 0.5W
On-state resistance: 500Ω
Gate-source voltage: ±20V
Drain-source voltage: 600V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 1840 Stücke:
Lieferzeit 14-21 Tag (e)
148+0.49 EUR
205+0.35 EUR
327+0.22 EUR
404+0.18 EUR
610+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 148
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BAS16UE6327HTSA1 BAS16UE6327HTSA1 INFINEON TECHNOLOGIES BAS16SH6327XTSA1.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC74; Ufmax: 1.25V; Ifsm: 4.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SC74
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 4403 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.17 EUR
455+0.16 EUR
491+0.15 EUR
511+0.14 EUR
Mindestbestellmenge: 417
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BAV70UE6327HTSA1 BAV70UE6327HTSA1 INFINEON TECHNOLOGIES BAV70E6327HTSA1.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC74; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double x2
Case: SC74
Max. forward voltage: 1.25V
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 5659 Stücke:
Lieferzeit 14-21 Tag (e)
2977+0.024 EUR
Mindestbestellmenge: 2977
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BAV99UE6327HTSA1 BAV99UE6327HTSA1 INFINEON TECHNOLOGIES BAV99SH6327XTSA1.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC74; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double series x2
Case: SC74
Max. forward voltage: 1.25V
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 2550 Stücke:
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481+0.15 EUR
596+0.12 EUR
676+0.11 EUR
Mindestbestellmenge: 481
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SMBTA42E6327HTSA1 SMBTA42E6327HTSA1 INFINEON TECHNOLOGIES SMBTA42.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 70MHz
auf Bestellung 6403 Stücke:
Lieferzeit 14-21 Tag (e)
120+0.6 EUR
141+0.51 EUR
161+0.45 EUR
242+0.3 EUR
293+0.24 EUR
500+0.15 EUR
1000+0.13 EUR
3000+0.11 EUR
Mindestbestellmenge: 120
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BC856UE6327 BC856UE6327 INFINEON TECHNOLOGIES BC856UE6327.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.25W; SC74
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC74
Mounting: SMD
Frequency: 250MHz
auf Bestellung 957 Stücke:
Lieferzeit 14-21 Tag (e)
410+0.17 EUR
521+0.14 EUR
589+0.12 EUR
Mindestbestellmenge: 410
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BC817UPNE6327HTSA1 BC817UPNE6327HTSA1 INFINEON TECHNOLOGIES BC817UPNE6327.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.5A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SC74
Mounting: SMD
Frequency: 170MHz
Kind of transistor: complementary pair
auf Bestellung 7003 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.44 EUR
239+0.3 EUR
345+0.21 EUR
500+0.17 EUR
1000+0.16 EUR
Mindestbestellmenge: 162
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IRLML9303TRPBF IRLML9303TRPBF INFINEON TECHNOLOGIES irlml9303pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.3A; 1.25W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.3A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 4770 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
317+0.23 EUR
481+0.15 EUR
569+0.13 EUR
667+0.11 EUR
705+0.1 EUR
807+0.089 EUR
1000+0.086 EUR
Mindestbestellmenge: 200
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BCP5616H6327XTSA1 BCP5616H6327XTSA1 INFINEON TECHNOLOGIES BCP5616H6327XTSA1.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Mounting: SMD
Frequency: 100MHz
auf Bestellung 140 Stücke:
Lieferzeit 14-21 Tag (e)
140+0.51 EUR
Mindestbestellmenge: 140
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BCX5610H6327XTSA1 BCX5610H6327XTSA1 INFINEON TECHNOLOGIES BCX56H6327XTSA1.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Frequency: 100MHz
auf Bestellung 945 Stücke:
Lieferzeit 14-21 Tag (e)
240+0.3 EUR
270+0.27 EUR
305+0.24 EUR
335+0.21 EUR
Mindestbestellmenge: 240
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BCX56H6327XTSA1 BCX56H6327XTSA1 INFINEON TECHNOLOGIES BCX56H6327XTSA1.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Frequency: 100MHz
Produkt ist nicht verfügbar
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IR2132JPBF IR2132JPBF INFINEON TECHNOLOGIES IR2132JPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Case: PLCC44
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Output current: -420...200mA
Turn-off time: 475ns
Turn-on time: 675ns
Power: 2W
Supply voltage: 10...20V DC
Number of channels: 6
Voltage class: 600V
Type of integrated circuit: driver
auf Bestellung 15 Stücke:
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13+5.55 EUR
Mindestbestellmenge: 13
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FM24C04B-G FM24C04B-G INFINEON TECHNOLOGIES FM24C04B-G.pdf Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 4.5÷5.5VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 4kb FRAM
Interface: I2C
Memory organisation: 512x8bit
Clock frequency: 1MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
auf Bestellung 590 Stücke:
Lieferzeit 14-21 Tag (e)
30+2.45 EUR
Mindestbestellmenge: 30
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FM24C04B-GTR FM24C04B-GTR INFINEON TECHNOLOGIES Infineon-FM24C04B_4-Kbit_(512_8)_Serial_(I2C)_F-RAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec967c841cc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 4.5÷5.5VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 4kb FRAM
Interface: I2C
Memory organisation: 512x8bit
Clock frequency: 1MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
auf Bestellung 2498 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.77 EUR
27+2.66 EUR
28+2.65 EUR
Mindestbestellmenge: 26
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SPW20N60S5 SPW20N60S5 INFINEON TECHNOLOGIES SPW20N60S5.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 231 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.42 EUR
15+4.88 EUR
30+4.3 EUR
120+3.88 EUR
Mindestbestellmenge: 14
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IRLZ34NPBF IRLZ34NPBF INFINEON TECHNOLOGIES irlz34n.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 27A; 56W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 27A
Power dissipation: 56W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 35mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Features of semiconductor devices: logic level
Gate charge: 16.7nC
auf Bestellung 2981 Stücke:
Lieferzeit 14-21 Tag (e)
62+1.16 EUR
77+0.93 EUR
110+0.65 EUR
121+0.59 EUR
250+0.52 EUR
500+0.48 EUR
1000+0.45 EUR
2000+0.42 EUR
Mindestbestellmenge: 62
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IRLZ34NSTRLPBF INFINEON TECHNOLOGIES irlz34nspbf.pdf?fileId=5546d462533600a40153567210152722 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 21A; Idm: 110A; 68W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 68W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 35mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFZ46NLPBF IRFZ46NLPBF INFINEON TECHNOLOGIES irfz46ns.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 53A; 120W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 53A
Power dissipation: 120W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: THT
Gate charge: 48nC
Kind of channel: enhancement
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.46 EUR
54+1.33 EUR
65+1.1 EUR
72+1 EUR
Mindestbestellmenge: 50
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IRFZ46NPBF IRFZ46NPBF INFINEON TECHNOLOGIES irfz46n.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 46A; 88W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 46A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 184 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.44 EUR
76+0.95 EUR
88+0.82 EUR
98+0.74 EUR
109+0.66 EUR
Mindestbestellmenge: 50
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FM24C64B-G FM24C64B-G INFINEON TECHNOLOGIES Infineon-FM24C64B_64-Kbit_(8_K_8)_Serial_(I2C)_F-RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdee5b30f8 Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 4.5÷5.5VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Clock frequency: 1MHz
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Interface: I2C
Memory: 64kb FRAM
Supply voltage: 4.5...5.5V DC
Memory organisation: 8kx8bit
Kind of interface: serial
Kind of memory: FRAM
auf Bestellung 643 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.26 EUR
Mindestbestellmenge: 14
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BTS4140N BTS4140N INFINEON TECHNOLOGIES BTS4140N.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.2A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 1Ω
Supply voltage: 4.9...60V DC
Technology: Classic PROFET
auf Bestellung 787 Stücke:
Lieferzeit 14-21 Tag (e)
48+1.52 EUR
53+1.36 EUR
60+1.2 EUR
100+1.09 EUR
500+1.06 EUR
Mindestbestellmenge: 48
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IRFB3006PBF IRFB3006PBF INFINEON TECHNOLOGIES irfb3006pbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 127 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.77 EUR
Mindestbestellmenge: 26
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IM69D120V01XTSA1 IM69D120V01XTSA1 INFINEON TECHNOLOGIES IM69D120.pdf Category: RTV - audio integrated circuits
Description: IC: driver/sensor; digital microphone; PDM; MEMS; 1.62÷3.6VDC
Type of integrated circuit: driver/sensor
Kind of integrated circuit: digital microphone
Interface: PDM
Integrated circuit features: MEMS
Mounting: SMD
Supply voltage: 1.62...3.6V DC
Case: LLGA-5-1
Produkt ist nicht verfügbar
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IM69D130V01XTSA1 IM69D130V01XTSA1 INFINEON TECHNOLOGIES IM69D130.pdf Category: RTV - audio integrated circuits
Description: IC: driver/sensor; digital microphone; PDM; MEMS; 1.62÷3.6VDC
Type of integrated circuit: driver/sensor
Kind of integrated circuit: digital microphone
Interface: PDM
Integrated circuit features: MEMS
Mounting: SMD
Supply voltage: 1.62...3.6V DC
Case: LLGA-5-1
Produkt ist nicht verfügbar
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SPA15N60C3XKSA1 SPA15N60C3XKSA1 INFINEON TECHNOLOGIES Infineon-SPP_I_A15N60C3-DataSheet-v03_03-EN.pdf?fileId=8ac78c8c82ce56640182d5124a105c23 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9.4A; Idm: 45A; 34W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9.4A
Pulsed drain current: 45A
Power dissipation: 34W
Case: PG-TO220 FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhancement
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.78 EUR
27+2.73 EUR
Mindestbestellmenge: 19
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AIHD15N60RATMA1 AIHD15N60RATMA1 INFINEON TECHNOLOGIES AIHD15N60R.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 250W
Case: DPAK
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-on time: 26ns
Turn-off time: 319ns
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Produkt ist nicht verfügbar
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AIHD15N60RFATMA1 AIHD15N60RFATMA1 INFINEON TECHNOLOGIES AIHD15N60RF.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 250W
Case: DPAK
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-on time: 28ns
Turn-off time: 177ns
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Produkt ist nicht verfügbar
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BTS4142N BTS4142N INFINEON TECHNOLOGIES BTS4142N.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.4A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 0.15Ω
Supply voltage: 12...45V DC
Technology: Classic PROFET
auf Bestellung 220 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.66 EUR
28+2.6 EUR
40+2.2 EUR
80+2.03 EUR
100+1.96 EUR
Mindestbestellmenge: 20
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IHW30N135R5XKSA1 IHW30N135R5XKSA1 INFINEON TECHNOLOGIES IHW30N135R5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 165W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.35kV
Collector current: 30A
Power dissipation: 165W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Turn-off time: 680ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Produkt ist nicht verfügbar
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IPB027N10N3GATMA1 IPB027N10N3GATMA1 INFINEON TECHNOLOGIES IPB027N10N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 300W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 300W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPB027N10N5ATMA1 IPB027N10N5ATMA1 INFINEON TECHNOLOGIES IPB027N10N5-dte.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IRLR3636TRPBF IRLR3636TRPBF INFINEON TECHNOLOGIES IRLR3636TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 99A; 143W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 99A
Power dissipation: 143W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 775 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.33 EUR
39+1.86 EUR
44+1.64 EUR
53+1.37 EUR
60+1.2 EUR
100+1.06 EUR
500+0.82 EUR
Mindestbestellmenge: 31
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BTS6163D BTS6163D INFINEON TECHNOLOGIES BTS6163D-DTE.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.5A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-5-11
On-state resistance: 20mΩ
Supply voltage: 5.5...62V DC
Technology: Classic PROFET
auf Bestellung 1034 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.23 EUR
17+4.42 EUR
100+3.72 EUR
Mindestbestellmenge: 12
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BTS716GXUMA1 BTS716GXUMA1 INFINEON TECHNOLOGIES BTS716G.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.6÷5.3A; Ch: 4; N-Channel; SMD; SO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.6...5.3A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: SO20
On-state resistance: 35mΩ
Supply voltage: 5.5...40V DC
Technology: Classic PROFET
Power dissipation: 3.6W
Turn-on time: 270µs
Turn-off time: 0.25ms
auf Bestellung 464 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.31 EUR
18+4.03 EUR
25+3.72 EUR
50+3.53 EUR
100+3.4 EUR
Mindestbestellmenge: 14
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IKW75N60TFKSA1 IKW75N60TFKSA1 INFINEON TECHNOLOGIES IKW75N60T.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 428W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 401ns
Turn-on time: 69ns
Technology: TRENCHSTOP™
auf Bestellung 126 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.65 EUR
12+6.26 EUR
13+5.88 EUR
Mindestbestellmenge: 10
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IRFR3910TRPBF IRFR3910TRPBF INFINEON TECHNOLOGIES irfr3910pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 1424 Stücke:
Lieferzeit 14-21 Tag (e)
61+1.19 EUR
71+1.02 EUR
80+0.9 EUR
112+0.64 EUR
128+0.56 EUR
250+0.54 EUR
Mindestbestellmenge: 61
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BSS123NH6433XTMA1 BSS123NH6433XTMA1 INFINEON TECHNOLOGIES Infineon-BSS123N-DS-v02_03-en.pdf?fileId=db3a304335f1f4b6013639adfaaa1631 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Pulsed drain current: 0.77A
Drain-source voltage: 100V
Drain current: 0.15A
Gate charge: 0.6nC
On-state resistance: 10Ω
Power dissipation: 0.5W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Technology: OptiMOS™
Type of transistor: N-MOSFET
auf Bestellung 8503 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
596+0.12 EUR
779+0.092 EUR
875+0.082 EUR
1153+0.062 EUR
1244+0.057 EUR
5000+0.052 EUR
Mindestbestellmenge: 209
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FM24CL04B-G FM24CL04B-G INFINEON TECHNOLOGIES Infineon-FM24CL04B_4-Kbit_(512_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec994a941e3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4bFRAM; I2C; 512x8bit; 2.7÷3.65VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 4b FRAM
Interface: I2C
Memory organisation: 512x8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
auf Bestellung 778 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.75 EUR
17+4.26 EUR
25+4.06 EUR
97+3.6 EUR
Mindestbestellmenge: 16
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FM24CL16B-GTR FM24CL16B-GTR INFINEON TECHNOLOGIES FM24CL16B-GTR.pdf Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; SO8
Case: SO8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.65V DC
Memory: 16kb FRAM
Clock frequency: 1MHz
Memory organisation: 2kx8bit
Interface: I2C
auf Bestellung 2028 Stücke:
Lieferzeit 14-21 Tag (e)
42+1.73 EUR
54+1.34 EUR
100+1.23 EUR
500+1.14 EUR
Mindestbestellmenge: 42
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BTS462T BTS462T INFINEON TECHNOLOGIES BTS462T.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.3A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
Supply voltage: 5...34V DC
Technology: Classic PROFET
Output voltage: 43V
auf Bestellung 1411 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.85 EUR
35+2.1 EUR
36+2 EUR
Mindestbestellmenge: 26
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BAT1504WH6327XTSA1 BAT1504WH6327XTSA1 INFINEON TECHNOLOGIES BAT1503WE6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 4V; 0.11A; 100mW
Type of diode: Schottky switching
Mounting: SMD
Load current: 0.11A
Semiconductor structure: double series
Max. off-state voltage: 4V
Case: SOT323
Power dissipation: 0.1W
Produkt ist nicht verfügbar
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BTS711L1 BTS711L1 INFINEON TECHNOLOGIES BTS711L1.pdf description Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.9÷4.4A; Ch: 4; N-Channel; SMD; DSO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.9...4.4A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: DSO20
Supply voltage: 5...34V DC
Technology: Classic PROFET
On-state resistance: 50mΩ
auf Bestellung 887 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.54 EUR
15+4.99 EUR
25+4.66 EUR
50+4.45 EUR
100+4.29 EUR
250+4.28 EUR
Mindestbestellmenge: 11
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BSS123IXTSA1 BSS123IXTSA1 INFINEON TECHNOLOGIES Infineon-BSS123I-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177a421ae8a1d46 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Gate charge: 0.63nC
Drain current: 0.15A
Power dissipation: 0.5W
Pulsed drain current: 0.77A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.26 EUR
820+0.087 EUR
1009+0.071 EUR
1092+0.065 EUR
1316+0.054 EUR
1425+0.05 EUR
1500+0.048 EUR
3000+0.044 EUR
Mindestbestellmenge: 278
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BSS123NH6327XTSA1 BSS123NH6327XTSA1 INFINEON TECHNOLOGIES BSS123NH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Pulsed drain current: 0.77A
Drain-source voltage: 100V
Drain current: 0.15A
Gate charge: 0.6nC
On-state resistance: 10Ω
Power dissipation: 0.5W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Technology: OptiMOS™
Type of transistor: N-MOSFET
auf Bestellung 17593 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.17 EUR
521+0.14 EUR
589+0.12 EUR
827+0.087 EUR
1000+0.072 EUR
1145+0.062 EUR
3000+0.054 EUR
Mindestbestellmenge: 417
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AIHD10N60RFATMA1 AIHD10N60RFATMA1 INFINEON TECHNOLOGIES AIHD10N60RF.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 64nC
Turn-on time: 27ns
Turn-off time: 186ns
Collector current: 10A
Produkt ist nicht verfügbar
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IRF1405ZPBF irf1405zpbf.pdf
IRF1405ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 150A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 150A
Power dissipation: 230W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRS21064PBF irs2106.pdf
IRS21064PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Mounting: THT
Case: DIP14
Supply voltage: 10...20V DC
Operating temperature: -40...125°C
Number of channels: 2
Topology: MOSFET half-bridge
Kind of package: tube
Output current: -600...290mA
Turn-off time: 235ns
Turn-on time: 320ns
Power: 1.6W
Voltage class: 600V
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.26 EUR
20+3.6 EUR
Mindestbestellmenge: 17
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IRS2106SPBF irs2106.pdf
IRS2106SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Operating temperature: -40...125°C
Mounting: SMD
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Case: SO8
Output current: -600...290mA
Turn-off time: 235ns
Turn-on time: 320ns
Power: 625mW
Supply voltage: 10...20V DC
Number of channels: 2
Voltage class: 600V
Kind of package: tube
Type of integrated circuit: driver
Produkt ist nicht verfügbar
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IRFB4115PBF IRFB4115.pdf
IRFB4115PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 74A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 74A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 464 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.09 EUR
26+2.8 EUR
28+2.62 EUR
33+2.2 EUR
Mindestbestellmenge: 24
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BCV47E6327 BCV27E6327.pdf
BCV47E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 0.5A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 170MHz
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+0.8 EUR
Mindestbestellmenge: 90
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SPW47N60C3 SPW47N60C3.pdf
SPW47N60C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 47A; 415W; PG-TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 47A
Power dissipation: 415W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 303 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.84 EUR
10+12.4 EUR
30+11.81 EUR
120+10.61 EUR
240+10.05 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
SPW47N60CFDFKSA1 SPW47N60CFD.pdf
SPW47N60CFDFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29A; 417W; PG-TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29A
Power dissipation: 417W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 83mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
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IRFR024NTRPBF description irfr024npbf.pdf
IRFR024NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 16A; 38W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 16A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 5904 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
183+0.39 EUR
191+0.38 EUR
199+0.36 EUR
250+0.34 EUR
500+0.33 EUR
1000+0.3 EUR
2000+0.29 EUR
Mindestbestellmenge: 173
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IHW30N120R5XKSA1 IHW30N120R5.pdf
IHW30N120R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 30A; 165W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 165W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 363ns
Technology: TRENCHSTOP™ RC
auf Bestellung 358 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.83 EUR
27+2.67 EUR
30+2.42 EUR
31+2.37 EUR
Mindestbestellmenge: 19
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IAUC60N06S5L073ATMA1 Infineon-IAUC60N06S5L073-DataSheet-v01_01-EN.pdf?fileId=5546d4627a0b0c7b017a1eb4f9c26feb
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 168A; 52W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Case: PG-TDSON-8
Gate-source voltage: ±16V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 22.6nC
On-state resistance: 9.8mΩ
Power dissipation: 52W
Pulsed drain current: 168A
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUC60N06S5N074ATMA1 Infineon-IAUC60N06S5N074-DataSheet-v01_00-EN.pdf?fileId=5546d4627a0b0c7b017a1eb505e56fee
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 168A; 52W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Case: PG-TDSON-8
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 20nC
On-state resistance: 9mΩ
Power dissipation: 52W
Pulsed drain current: 168A
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA060N06NXKSA1 IPA060N06N-DTE.pdf
IPA060N06NXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 45A
Case: TO220FP
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 6mΩ
Power dissipation: 33W
Technology: OptiMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF9Z24NPBF irf9z24n.pdf
IRF9Z24NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -12A; 45W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -12A
Power dissipation: 45W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 12.7nC
Technology: HEXFET®
Kind of package: tube
auf Bestellung 1900 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
72+1 EUR
147+0.49 EUR
157+0.46 EUR
163+0.44 EUR
171+0.42 EUR
500+0.39 EUR
1000+0.37 EUR
Mindestbestellmenge: 72
Im Einkaufswagen  Stück im Wert von  UAH
IRF9Z24NSTRLPBF Infineon-IRF9Z24NS-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fee376ad063e
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -8.5A; Idm: -48A; 45W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -8.5A
Pulsed drain current: -48A
Power dissipation: 45W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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BAT6404E6327HTSA1 BAT6402VH6327XTSA1.pdf
BAT6404E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.25A; 250mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: double series
Max. forward voltage: 0.75V
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
auf Bestellung 20560 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
715+0.1 EUR
758+0.094 EUR
782+0.092 EUR
955+0.075 EUR
1097+0.065 EUR
1158+0.062 EUR
3000+0.057 EUR
Mindestbestellmenge: 715
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BSS127H6327XTSA2 BSS127H6327XTSA2.pdf
BSS127H6327XTSA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: SIPMOS™
Drain current: 21mA
Power dissipation: 0.5W
On-state resistance: 500Ω
Gate-source voltage: ±20V
Drain-source voltage: 600V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 1840 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
148+0.49 EUR
205+0.35 EUR
327+0.22 EUR
404+0.18 EUR
610+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 148
Im Einkaufswagen  Stück im Wert von  UAH
BAS16UE6327HTSA1 BAS16SH6327XTSA1.pdf
BAS16UE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC74; Ufmax: 1.25V; Ifsm: 4.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: triple independent
Case: SC74
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 4403 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
455+0.16 EUR
491+0.15 EUR
511+0.14 EUR
Mindestbestellmenge: 417
Im Einkaufswagen  Stück im Wert von  UAH
BAV70UE6327HTSA1 BAV70E6327HTSA1.pdf
BAV70UE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC74; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double x2
Case: SC74
Max. forward voltage: 1.25V
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 5659 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2977+0.024 EUR
Mindestbestellmenge: 2977
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BAV99UE6327HTSA1 BAV99SH6327XTSA1.pdf
BAV99UE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SC74; Ufmax: 1.25V; 250mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double series x2
Case: SC74
Max. forward voltage: 1.25V
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 2550 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
481+0.15 EUR
596+0.12 EUR
676+0.11 EUR
Mindestbestellmenge: 481
Im Einkaufswagen  Stück im Wert von  UAH
SMBTA42E6327HTSA1 SMBTA42.pdf
SMBTA42E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 70MHz
auf Bestellung 6403 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
141+0.51 EUR
161+0.45 EUR
242+0.3 EUR
293+0.24 EUR
500+0.15 EUR
1000+0.13 EUR
3000+0.11 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
BC856UE6327 BC856UE6327.pdf
BC856UE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.25W; SC74
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC74
Mounting: SMD
Frequency: 250MHz
auf Bestellung 957 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
410+0.17 EUR
521+0.14 EUR
589+0.12 EUR
Mindestbestellmenge: 410
Im Einkaufswagen  Stück im Wert von  UAH
BC817UPNE6327HTSA1 BC817UPNE6327.pdf
BC817UPNE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.5A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SC74
Mounting: SMD
Frequency: 170MHz
Kind of transistor: complementary pair
auf Bestellung 7003 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
239+0.3 EUR
345+0.21 EUR
500+0.17 EUR
1000+0.16 EUR
Mindestbestellmenge: 162
Im Einkaufswagen  Stück im Wert von  UAH
IRLML9303TRPBF irlml9303pbf.pdf
IRLML9303TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.3A; 1.25W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.3A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 4770 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
317+0.23 EUR
481+0.15 EUR
569+0.13 EUR
667+0.11 EUR
705+0.1 EUR
807+0.089 EUR
1000+0.086 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
BCP5616H6327XTSA1 BCP5616H6327XTSA1.pdf
BCP5616H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Mounting: SMD
Frequency: 100MHz
auf Bestellung 140 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
140+0.51 EUR
Mindestbestellmenge: 140
Im Einkaufswagen  Stück im Wert von  UAH
BCX5610H6327XTSA1 BCX56H6327XTSA1.pdf
BCX5610H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Frequency: 100MHz
auf Bestellung 945 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
240+0.3 EUR
270+0.27 EUR
305+0.24 EUR
335+0.21 EUR
Mindestbestellmenge: 240
Im Einkaufswagen  Stück im Wert von  UAH
BCX56H6327XTSA1 BCX56H6327XTSA1.pdf
BCX56H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Frequency: 100MHz
Produkt ist nicht verfügbar
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IR2132JPBF description IR2132JPBF.pdf
IR2132JPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Case: PLCC44
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Output current: -420...200mA
Turn-off time: 475ns
Turn-on time: 675ns
Power: 2W
Supply voltage: 10...20V DC
Number of channels: 6
Voltage class: 600V
Type of integrated circuit: driver
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.55 EUR
Mindestbestellmenge: 13
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FM24C04B-G FM24C04B-G.pdf
FM24C04B-G
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 4.5÷5.5VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 4kb FRAM
Interface: I2C
Memory organisation: 512x8bit
Clock frequency: 1MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
auf Bestellung 590 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.45 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
FM24C04B-GTR Infineon-FM24C04B_4-Kbit_(512_8)_Serial_(I2C)_F-RAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec967c841cc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM24C04B-GTR
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; I2C; 512x8bit; 4.5÷5.5VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 4kb FRAM
Interface: I2C
Memory organisation: 512x8bit
Clock frequency: 1MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
auf Bestellung 2498 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.77 EUR
27+2.66 EUR
28+2.65 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
SPW20N60S5 description SPW20N60S5.pdf
SPW20N60S5
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 231 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.42 EUR
15+4.88 EUR
30+4.3 EUR
120+3.88 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IRLZ34NPBF description irlz34n.pdf
IRLZ34NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 27A; 56W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 27A
Power dissipation: 56W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 35mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Features of semiconductor devices: logic level
Gate charge: 16.7nC
auf Bestellung 2981 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
62+1.16 EUR
77+0.93 EUR
110+0.65 EUR
121+0.59 EUR
250+0.52 EUR
500+0.48 EUR
1000+0.45 EUR
2000+0.42 EUR
Mindestbestellmenge: 62
Im Einkaufswagen  Stück im Wert von  UAH
IRLZ34NSTRLPBF irlz34nspbf.pdf?fileId=5546d462533600a40153567210152722
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 21A; Idm: 110A; 68W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 68W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 35mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFZ46NLPBF description irfz46ns.pdf
IRFZ46NLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 53A; 120W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 53A
Power dissipation: 120W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: THT
Gate charge: 48nC
Kind of channel: enhancement
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.46 EUR
54+1.33 EUR
65+1.1 EUR
72+1 EUR
Mindestbestellmenge: 50
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IRFZ46NPBF description irfz46n.pdf
IRFZ46NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 46A; 88W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 46A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 184 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.44 EUR
76+0.95 EUR
88+0.82 EUR
98+0.74 EUR
109+0.66 EUR
Mindestbestellmenge: 50
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FM24C64B-G Infineon-FM24C64B_64-Kbit_(8_K_8)_Serial_(I2C)_F-RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdee5b30f8
FM24C64B-G
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 4.5÷5.5VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Clock frequency: 1MHz
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Interface: I2C
Memory: 64kb FRAM
Supply voltage: 4.5...5.5V DC
Memory organisation: 8kx8bit
Kind of interface: serial
Kind of memory: FRAM
auf Bestellung 643 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.26 EUR
Mindestbestellmenge: 14
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BTS4140N BTS4140N.pdf
BTS4140N
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.2A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 1Ω
Supply voltage: 4.9...60V DC
Technology: Classic PROFET
auf Bestellung 787 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
48+1.52 EUR
53+1.36 EUR
60+1.2 EUR
100+1.09 EUR
500+1.06 EUR
Mindestbestellmenge: 48
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IRFB3006PBF description irfb3006pbf.pdf
IRFB3006PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 127 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.77 EUR
Mindestbestellmenge: 26
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IM69D120V01XTSA1 IM69D120.pdf
IM69D120V01XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: driver/sensor; digital microphone; PDM; MEMS; 1.62÷3.6VDC
Type of integrated circuit: driver/sensor
Kind of integrated circuit: digital microphone
Interface: PDM
Integrated circuit features: MEMS
Mounting: SMD
Supply voltage: 1.62...3.6V DC
Case: LLGA-5-1
Produkt ist nicht verfügbar
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IM69D130V01XTSA1 IM69D130.pdf
IM69D130V01XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: driver/sensor; digital microphone; PDM; MEMS; 1.62÷3.6VDC
Type of integrated circuit: driver/sensor
Kind of integrated circuit: digital microphone
Interface: PDM
Integrated circuit features: MEMS
Mounting: SMD
Supply voltage: 1.62...3.6V DC
Case: LLGA-5-1
Produkt ist nicht verfügbar
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SPA15N60C3XKSA1 Infineon-SPP_I_A15N60C3-DataSheet-v03_03-EN.pdf?fileId=8ac78c8c82ce56640182d5124a105c23
SPA15N60C3XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9.4A; Idm: 45A; 34W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9.4A
Pulsed drain current: 45A
Power dissipation: 34W
Case: PG-TO220 FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhancement
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.78 EUR
27+2.73 EUR
Mindestbestellmenge: 19
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AIHD15N60RATMA1 AIHD15N60R.pdf
AIHD15N60RATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 250W
Case: DPAK
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-on time: 26ns
Turn-off time: 319ns
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Produkt ist nicht verfügbar
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AIHD15N60RFATMA1 AIHD15N60RF.pdf
AIHD15N60RFATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 250W
Case: DPAK
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-on time: 28ns
Turn-off time: 177ns
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Produkt ist nicht verfügbar
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BTS4142N BTS4142N.pdf
BTS4142N
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.4A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 0.15Ω
Supply voltage: 12...45V DC
Technology: Classic PROFET
auf Bestellung 220 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.66 EUR
28+2.6 EUR
40+2.2 EUR
80+2.03 EUR
100+1.96 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IHW30N135R5XKSA1 IHW30N135R5.pdf
IHW30N135R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 165W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.35kV
Collector current: 30A
Power dissipation: 165W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Turn-off time: 680ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Produkt ist nicht verfügbar
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IPB027N10N3GATMA1 IPB027N10N3G-DTE.pdf
IPB027N10N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 300W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 300W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPB027N10N5ATMA1 IPB027N10N5-dte.pdf
IPB027N10N5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IRLR3636TRPBF IRLR3636TRPBF.pdf
IRLR3636TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 99A; 143W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 99A
Power dissipation: 143W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 775 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.33 EUR
39+1.86 EUR
44+1.64 EUR
53+1.37 EUR
60+1.2 EUR
100+1.06 EUR
500+0.82 EUR
Mindestbestellmenge: 31
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BTS6163D BTS6163D-DTE.pdf
BTS6163D
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.5A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-5-11
On-state resistance: 20mΩ
Supply voltage: 5.5...62V DC
Technology: Classic PROFET
auf Bestellung 1034 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.23 EUR
17+4.42 EUR
100+3.72 EUR
Mindestbestellmenge: 12
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BTS716GXUMA1 BTS716G.pdf
BTS716GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.6÷5.3A; Ch: 4; N-Channel; SMD; SO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.6...5.3A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: SO20
On-state resistance: 35mΩ
Supply voltage: 5.5...40V DC
Technology: Classic PROFET
Power dissipation: 3.6W
Turn-on time: 270µs
Turn-off time: 0.25ms
auf Bestellung 464 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.31 EUR
18+4.03 EUR
25+3.72 EUR
50+3.53 EUR
100+3.4 EUR
Mindestbestellmenge: 14
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IKW75N60TFKSA1 IKW75N60T.pdf
IKW75N60TFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 428W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 401ns
Turn-on time: 69ns
Technology: TRENCHSTOP™
auf Bestellung 126 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.65 EUR
12+6.26 EUR
13+5.88 EUR
Mindestbestellmenge: 10
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IRFR3910TRPBF irfr3910pbf.pdf
IRFR3910TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 1424 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.19 EUR
71+1.02 EUR
80+0.9 EUR
112+0.64 EUR
128+0.56 EUR
250+0.54 EUR
Mindestbestellmenge: 61
Im Einkaufswagen  Stück im Wert von  UAH
BSS123NH6433XTMA1 Infineon-BSS123N-DS-v02_03-en.pdf?fileId=db3a304335f1f4b6013639adfaaa1631
BSS123NH6433XTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Pulsed drain current: 0.77A
Drain-source voltage: 100V
Drain current: 0.15A
Gate charge: 0.6nC
On-state resistance: 10Ω
Power dissipation: 0.5W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Technology: OptiMOS™
Type of transistor: N-MOSFET
auf Bestellung 8503 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
596+0.12 EUR
779+0.092 EUR
875+0.082 EUR
1153+0.062 EUR
1244+0.057 EUR
5000+0.052 EUR
Mindestbestellmenge: 209
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FM24CL04B-G Infineon-FM24CL04B_4-Kbit_(512_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec994a941e3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM24CL04B-G
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4bFRAM; I2C; 512x8bit; 2.7÷3.65VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 4b FRAM
Interface: I2C
Memory organisation: 512x8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
auf Bestellung 778 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.75 EUR
17+4.26 EUR
25+4.06 EUR
97+3.6 EUR
Mindestbestellmenge: 16
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FM24CL16B-GTR FM24CL16B-GTR.pdf
FM24CL16B-GTR
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; SO8
Case: SO8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.65V DC
Memory: 16kb FRAM
Clock frequency: 1MHz
Memory organisation: 2kx8bit
Interface: I2C
auf Bestellung 2028 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
42+1.73 EUR
54+1.34 EUR
100+1.23 EUR
500+1.14 EUR
Mindestbestellmenge: 42
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BTS462T BTS462T.pdf
BTS462T
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.3A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
Supply voltage: 5...34V DC
Technology: Classic PROFET
Output voltage: 43V
auf Bestellung 1411 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.85 EUR
35+2.1 EUR
36+2 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
BAT1504WH6327XTSA1 BAT1503WE6327HTSA1.pdf
BAT1504WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 4V; 0.11A; 100mW
Type of diode: Schottky switching
Mounting: SMD
Load current: 0.11A
Semiconductor structure: double series
Max. off-state voltage: 4V
Case: SOT323
Power dissipation: 0.1W
Produkt ist nicht verfügbar
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BTS711L1 description BTS711L1.pdf
BTS711L1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.9÷4.4A; Ch: 4; N-Channel; SMD; DSO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.9...4.4A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: DSO20
Supply voltage: 5...34V DC
Technology: Classic PROFET
On-state resistance: 50mΩ
auf Bestellung 887 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.54 EUR
15+4.99 EUR
25+4.66 EUR
50+4.45 EUR
100+4.29 EUR
250+4.28 EUR
Mindestbestellmenge: 11
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BSS123IXTSA1 Infineon-BSS123I-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177a421ae8a1d46
BSS123IXTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Gate charge: 0.63nC
Drain current: 0.15A
Power dissipation: 0.5W
Pulsed drain current: 0.77A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Drain-source voltage: 100V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
820+0.087 EUR
1009+0.071 EUR
1092+0.065 EUR
1316+0.054 EUR
1425+0.05 EUR
1500+0.048 EUR
3000+0.044 EUR
Mindestbestellmenge: 278
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BSS123NH6327XTSA1 BSS123NH6327XTSA1.pdf
BSS123NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Case: SOT23
Mounting: SMD
Pulsed drain current: 0.77A
Drain-source voltage: 100V
Drain current: 0.15A
Gate charge: 0.6nC
On-state resistance: 10Ω
Power dissipation: 0.5W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Technology: OptiMOS™
Type of transistor: N-MOSFET
auf Bestellung 17593 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
521+0.14 EUR
589+0.12 EUR
827+0.087 EUR
1000+0.072 EUR
1145+0.062 EUR
3000+0.054 EUR
Mindestbestellmenge: 417
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AIHD10N60RFATMA1 AIHD10N60RF.pdf
AIHD10N60RFATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 150W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 64nC
Turn-on time: 27ns
Turn-off time: 186ns
Collector current: 10A
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