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S25FL128SAGNFI011 S25FL128SAGNFI011 INFINEON TECHNOLOGIES Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; SPI; 133MHz; 2.7÷3.6V; WSON8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
auf Bestellung 54 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.59 EUR
15+5.05 EUR
Mindestbestellmenge: 13
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S25FL128SAGNFV001 S25FL128SAGNFV001 INFINEON TECHNOLOGIES Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: tube
auf Bestellung 66 Stücke:
Lieferzeit 14-21 Tag (e)
27+2.7 EUR
Mindestbestellmenge: 27
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TLD5097EPXUMA1 INFINEON TECHNOLOGIES Infineon-TLD5097EP-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c620b58a1180e Category: LED drivers
Description: IC: driver; SMPS controller,LED driver; Litix™; PG-TSDSO-14; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: LED driver; SMPS controller
Technology: Litix™
Case: PG-TSDSO-14
Output current: -550...380mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 4.5...45V DC
Protection: overheating OTP
Produkt ist nicht verfügbar
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TLD5098EPXUMA1 INFINEON TECHNOLOGIES Infineon-TLD5098EP-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c620b67681811 Category: LED drivers
Description: IC: driver; SMPS controller,LED driver; Litix™; PG-TSDSO-14; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: LED driver; SMPS controller
Technology: Litix™
Case: PG-TSDSO-14
Output current: -550...380mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 4.5...45V DC
Protection: overheating OTP
Produkt ist nicht verfügbar
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IRFB7440PBF IRFB7440PBF INFINEON TECHNOLOGIES IRFB7440PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 208A; 208W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 208A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
auf Bestellung 546 Stücke:
Lieferzeit 14-21 Tag (e)
48+1.5 EUR
70+1.03 EUR
77+0.93 EUR
94+0.77 EUR
100+0.75 EUR
Mindestbestellmenge: 48
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IRL40SC228 IRL40SC228 INFINEON TECHNOLOGIES infineon-irl40sc228-ds-en.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 557A; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 557A
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.58 EUR
20+3.7 EUR
22+3.3 EUR
26+2.82 EUR
50+2.59 EUR
Mindestbestellmenge: 16
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IPD80R450P7ATMA1 IPD80R450P7ATMA1 INFINEON TECHNOLOGIES IPD80R450P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.1A; 73W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.1A
Power dissipation: 73W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: SMD
Gate charge: 24nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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TLE7257SJXUMA1 TLE7257SJXUMA1 INFINEON TECHNOLOGIES TLE7257.pdf Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-DSO-8
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 3mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 5.5...18V DC
Interface: LIN
Produkt ist nicht verfügbar
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IRS2108PBF IRS2108PBF INFINEON TECHNOLOGIES irs2108.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
Produkt ist nicht verfügbar
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IRS21094SPBF IRS21094SPBF INFINEON TECHNOLOGIES irs2109.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 850ns
Turn-off time: 235ns
Produkt ist nicht verfügbar
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TT122N22KOFHPSA2 TT122N22KOFHPSA2 INFINEON TECHNOLOGIES TT122N22KOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 122A; BG-PB34-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 122A
Case: BG-PB34-1
Max. forward voltage: 1.95V
Max. forward impulse current: 3.3kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IRF7805TRPBF IRF7805TRPBF INFINEON TECHNOLOGIES irf7805pbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; 2.5W; SO8
Case: SO8
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Power dissipation: 2.5W
Gate-source voltage: ±12V
Drain current: 13A
Drain-source voltage: 30V
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPT020N10N5ATMA1 INFINEON TECHNOLOGIES infineon-ipt020n10n5-datasheet-en.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 260A; 273W; HSOF-8
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 122nC
On-state resistance: 2mΩ
Drain-source voltage: 100V
Drain current: 260A
Kind of channel: enhancement
Power dissipation: 273W
Case: HSOF-8
Produkt ist nicht verfügbar
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CY7C1470V25-200AXC INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C
Case: TQFP100
Mounting: SMD
Kind of package: in-tray
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: 0...70°C
Supply voltage: 2.5V DC
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Frequency: 200MHz
Kind of interface: parallel
Produkt ist nicht verfügbar
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IPP020N08N5AKSA1 IPP020N08N5AKSA1 INFINEON TECHNOLOGIES IPP020N08N5-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Kind of channel: enhancement
Technology: OptiMOS™ 5
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 2mΩ
Gate-source voltage: ±20V
Power dissipation: 375W
Drain-source voltage: 80V
Drain current: 120A
Kind of package: tube
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.45 EUR
13+5.81 EUR
15+5.09 EUR
Mindestbestellmenge: 12
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IRL530NSTRLPBF IRL530NSTRLPBF INFINEON TECHNOLOGIES irl530nspbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Power dissipation: 3.8W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
auf Bestellung 3685 Stücke:
Lieferzeit 14-21 Tag (e)
36+2.03 EUR
48+1.49 EUR
68+1.05 EUR
100+0.9 EUR
125+0.86 EUR
250+0.74 EUR
500+0.66 EUR
800+0.62 EUR
1600+0.57 EUR
Mindestbestellmenge: 36
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CY62256NLL-70SNXCT CY62256NLL-70SNXCT INFINEON TECHNOLOGIES CY62256N.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 4.5÷5.5V; 70ns; SO28; 0÷70°C
Kind of package: reel; tape
Operating temperature: 0...70°C
Mounting: SMD
Case: SO28
Type of integrated circuit: SRAM memory
Access time: 70ns
Operating voltage: 4.5...5.5V
Kind of memory: SRAM
Memory organisation: 32kx8bit
Memory: 256kb SRAM
Kind of interface: parallel
Produkt ist nicht verfügbar
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IPAN70R750P7SXKSA1 IPAN70R750P7SXKSA1 INFINEON TECHNOLOGIES IPAN70R750P7S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; 20.8W; TO220FP; ESD
Case: TO220FP
Mounting: THT
Kind of package: tube
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Gate charge: 8.3nC
Power dissipation: 20.8W
On-state resistance: 0.75Ω
Gate-source voltage: ±16V
auf Bestellung 161 Stücke:
Lieferzeit 14-21 Tag (e)
117+0.61 EUR
132+0.54 EUR
141+0.51 EUR
148+0.48 EUR
Mindestbestellmenge: 117
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IPU95R750P7AKMA1 IPU95R750P7AKMA1 INFINEON TECHNOLOGIES IPU95R750P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 73W; IPAK; ESD
Case: IPAK
Mounting: THT
Kind of package: tube
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 5.5A
Gate charge: 23nC
Power dissipation: 73W
On-state resistance: 0.75Ω
Gate-source voltage: ±20V
auf Bestellung 147 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.06 EUR
40+1.82 EUR
44+1.63 EUR
53+1.36 EUR
62+1.16 EUR
75+1.12 EUR
Mindestbestellmenge: 35
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BSZ100N03LSGATMA1 BSZ100N03LSGATMA1 INFINEON TECHNOLOGIES BSZ100N03LSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 30W; PG-TSDSON-8
Drain-source voltage: 30V
Case: PG-TSDSON-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 10mΩ
Power dissipation: 30W
Drain current: 36A
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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IRLH5030TRPBF IRLH5030TRPBF INFINEON TECHNOLOGIES irlh5030pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 3.6W; PQFN5X6
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 3.6W
Drain current: 13A
Drain-source voltage: 100V
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Case: PQFN5X6
Produkt ist nicht verfügbar
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IPA80R1K0CEXKSA2 IPA80R1K0CEXKSA2 INFINEON TECHNOLOGIES IPA80R1K0CE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.6A; Idm: 18A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 18A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 132 Stücke:
Lieferzeit 14-21 Tag (e)
32+2.25 EUR
53+1.37 EUR
57+1.26 EUR
Mindestbestellmenge: 32
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S26HS01GTGABHA030 INFINEON TECHNOLOGIES Infineon-S26HS01GTGABHM020-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017f52f2f5182c91 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 200MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: HyperBus
Operating frequency: 200MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
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S26KL512SDABHV023 INFINEON TECHNOLOGIES download Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Interface: HyperBus
Kind of interface: serial
Operating voltage: 2.7...3.6V
Operating frequency: 100MHz
Produkt ist nicht verfügbar
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S26KS128SDPBHA020 INFINEON TECHNOLOGIES Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Interface: HyperBus
Kind of interface: serial
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Application: automotive
Produkt ist nicht verfügbar
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IPD70R360P7SAUMA1 IPD70R360P7SAUMA1 INFINEON TECHNOLOGIES IPD70R360P7S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 59.5W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1316 Stücke:
Lieferzeit 14-21 Tag (e)
54+1.34 EUR
69+1.05 EUR
83+0.87 EUR
102+0.7 EUR
118+0.61 EUR
Mindestbestellmenge: 54
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IRFP90N20DPBF IRFP90N20DPBF INFINEON TECHNOLOGIES irfp90n20d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 94A; 580W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 94A
Power dissipation: 580W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 587 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.41 EUR
18+4.16 EUR
25+3.79 EUR
100+3.22 EUR
125+3.12 EUR
400+3.02 EUR
Mindestbestellmenge: 14
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SGW50N60HS SGW50N60HS INFINEON TECHNOLOGIES SGW50N60HS.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 416W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 416W
Case: TO247-3
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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CY7C65630-56LTXC INFINEON TECHNOLOGIES Infineon-CY7C65620_CY7C65630_EZ-USB_HX2LP_LOW_POWER_USB_2.0_HUB_CONTROLLER_FAMILY-DataSheet-v33_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc56b1463f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integra Category: USB interfaces - integrated circuits
Description: IC: HUB controller; SPI,USB 2.0; 3.15÷3.45VDC; QFN56; Core: 8-bit
Type of integrated circuit: HUB controller
Interface: SPI; USB 2.0
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.45V DC
Case: QFN56
Integrated circuit features: USB HUB
Kind of core: 8-bit
Produkt ist nicht verfügbar
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CY7C65630-56LTXI INFINEON TECHNOLOGIES Infineon-CY7C65620_CY7C65630_EZ-USB_HX2LP_LOW_POWER_USB_2.0_HUB_CONTROLLER_FAMILY-DataSheet-v33_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc56b1463f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integra Category: USB interfaces - integrated circuits
Description: IC: HUB controller; SPI,USB 2.0; 3.15÷3.45VDC; PG-VQFN-56
Type of integrated circuit: HUB controller
Interface: SPI; USB 2.0
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3.15...3.45V DC
Case: PG-VQFN-56
Integrated circuit features: USB HUB
Kind of core: 8-bit
Produkt ist nicht verfügbar
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CY7C65631-56LTXC INFINEON TECHNOLOGIES Infineon-CY7C65621_CY7C65631_EZ-USB_HX2LP_Lite_Low_Power_USB_2.0_Hub_Controller_Family-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecaf0514410&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: USB interfaces - integrated circuits
Description: IC: HUB controller; SPI,USB 2.0; 3.15÷3.45VDC; PG-VQFN-56
Type of integrated circuit: HUB controller
Interface: SPI; USB 2.0
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.45V DC
Case: PG-VQFN-56
Integrated circuit features: USB HUB
Kind of core: 8-bit
Produkt ist nicht verfügbar
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CY7C65632-48AXC CY7C65632-48AXC INFINEON TECHNOLOGIES download Category: USB interfaces - integrated circuits
Description: IC: HUB controller; GPIO,I2C,SPI,USB 2.0; 3.15÷3.45VDC; TQFP48
Type of integrated circuit: HUB controller
Interface: GPIO; I2C; SPI; USB 2.0
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.45V DC
Case: TQFP48
Integrated circuit features: USB HUB
Kind of core: 8-bit
Produkt ist nicht verfügbar
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CY7C65632-28LTXC INFINEON TECHNOLOGIES download Category: USB interfaces - integrated circuits
Description: IC: HUB controller; GPIO,I2C,SPI,USB 2.0; 3.15÷3.45VDC; QFN28
Type of integrated circuit: HUB controller
Interface: GPIO; I2C; SPI; USB 2.0
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.45V DC
Case: QFN28
Integrated circuit features: USB HUB
Kind of core: 8-bit
Produkt ist nicht verfügbar
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CY7C65632-28LTXCT INFINEON TECHNOLOGIES download Category: USB interfaces - integrated circuits
Description: IC: HUB controller; GPIO,I2C,SPI,USB 2.0; 3.15÷3.45VDC; QFN28
Type of integrated circuit: HUB controller
Interface: GPIO; I2C; SPI; USB 2.0
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.45V DC
Case: QFN28
Integrated circuit features: USB HUB
Kind of core: 8-bit
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CY7C65642-48AXC CY7C65642-48AXC INFINEON TECHNOLOGIES Infineon-CY7C65642_HX2VL_VERY_LOW-POWER_USB_2.0_TETRAHUB_CONTROLLER-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecba5984534&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: USB interfaces - integrated circuits
Description: IC: HUB controller; GPIO,I2C,SPI,USB 2.0; 3.15÷3.45VDC; TQFP48
Type of integrated circuit: HUB controller
Interface: GPIO; I2C; SPI; USB 2.0
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.45V DC
Case: TQFP48
Integrated circuit features: USB HUB
Kind of core: 8-bit
Produkt ist nicht verfügbar
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CY7C65642-48AXCT CY7C65642-48AXCT INFINEON TECHNOLOGIES Infineon-CY7C65642_HX2VL_VERY_LOW-POWER_USB_2.0_TETRAHUB_CONTROLLER-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecba5984534&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: USB interfaces - integrated circuits
Description: IC: HUB controller; GPIO,I2C,SPI,USB 2.0; 3.15÷3.45VDC; TQFP48
Type of integrated circuit: HUB controller
Interface: GPIO; I2C; SPI; USB 2.0
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.45V DC
Case: TQFP48
Integrated circuit features: USB HUB
Kind of core: 8-bit
Produkt ist nicht verfügbar
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IR2011SPBF IR2011SPBF INFINEON TECHNOLOGIES IR2011SPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -1...1A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 80ns
Turn-off time: 60ns
auf Bestellung 77 Stücke:
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41+1.76 EUR
47+1.53 EUR
51+1.42 EUR
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IR2010PBF IR2010PBF INFINEON TECHNOLOGIES IR2010SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Mounting: THT
Case: DIP14
Supply voltage: 10...20V DC
Operating temperature: -40...125°C
Number of channels: 2
Topology: MOSFET half-bridge
Kind of package: tube
Output current: -3...3A
Turn-off time: 65ns
Turn-on time: 95ns
Power: 1.6W
Voltage class: 200V
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
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14+5.19 EUR
16+4.7 EUR
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IR2085STRPBF IR2085STRPBF INFINEON TECHNOLOGIES Infineon-IR2085S-DS-v01_02-EN.pdf?fileId=5546d4625b62cd8a015bb0f752184828 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -1...1A
Power: 1W
Number of channels: 2
Supply voltage: 10...15V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 100V
Produkt ist nicht verfügbar
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IR2011PBF IR2011PBF INFINEON TECHNOLOGIES IR2011SPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -1...1A
Number of channels: 2
Mounting: THT
Operating temperature: -40...125°C
Topology: MOSFET half-bridge
Kind of package: tube
Turn-off time: 60ns
Turn-on time: 80ns
Power: 1W
Supply voltage: 10...20V DC
Voltage class: 200V
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.06 EUR
22+3.36 EUR
25+3.22 EUR
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AUIR2085STR AUIR2085STR INFINEON TECHNOLOGIES auir2085s.pdf?fileId=5546d462533600a4015355a82609133f Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -1...1A
Power: 625mW
Number of channels: 2
Supply voltage: 10...15V DC
Mounting: SMD
Kind of package: reel; tape
Voltage class: 100V
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BCR166E6327 BCR166E6327 INFINEON TECHNOLOGIES BCR166.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Mounting: SMD
Case: SOT23
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Frequency: 160MHz
Polarisation: bipolar
Kind of transistor: BRT
auf Bestellung 336 Stücke:
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179+0.4 EUR
285+0.25 EUR
336+0.21 EUR
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BCR162E6327 BCR162E6327 INFINEON TECHNOLOGIES BCR162.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Mounting: SMD
Case: SOT23
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Frequency: 200MHz
Polarisation: bipolar
Kind of transistor: BRT
auf Bestellung 5 Stücke:
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5+14.3 EUR
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BSC123N08NS3GATMA1 BSC123N08NS3GATMA1 INFINEON TECHNOLOGIES BSC123N08NS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 66W; PG-TDSON-8
Mounting: SMD
On-state resistance: 12.3mΩ
Drain current: 55A
Gate-source voltage: ±20V
Power dissipation: 66W
Drain-source voltage: 80V
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TDSON-8
auf Bestellung 2424 Stücke:
Lieferzeit 14-21 Tag (e)
64+1.13 EUR
87+0.82 EUR
103+0.7 EUR
109+0.66 EUR
250+0.63 EUR
500+0.6 EUR
1000+0.54 EUR
2000+0.5 EUR
Mindestbestellmenge: 64
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BTS50055-1TMB BTS50055-1TMB INFINEON TECHNOLOGIES BTS50055-1TMB.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 55A; Ch: 1; N-Channel; THT
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 55A
Number of channels: 1
Kind of output: N-Channel
Mounting: THT
Case: PG-TO220-7-11
On-state resistance: 4.4mΩ
Supply voltage: 5...34V DC
Technology: High Current PROFET
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BTS50080-1TEA BTS50080-1TEA INFINEON TECHNOLOGIES BTS500801TEA.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 10A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-5-11
On-state resistance: 16mΩ
Supply voltage: 5.5...30V DC
Technology: High Current PROFET
Output voltage: 39V
auf Bestellung 348 Stücke:
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14+5.16 EUR
21+3.47 EUR
100+2.95 EUR
Mindestbestellmenge: 14
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BTS50080-1TMA BTS50080-1TMA INFINEON TECHNOLOGIES BTS50080-1TMA.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.5A; Ch: 1; N-Channel; SMD
Case: PG-TO220-7-4
Technology: High Current PROFET
Kind of integrated circuit: high-side
Kind of output: N-Channel
Mounting: SMD
On-state resistance: 7mΩ
Number of channels: 1
Supply voltage: 5.5...38V DC
Output current: 9.5A
Type of integrated circuit: power switch
auf Bestellung 974 Stücke:
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12+6.45 EUR
14+5.42 EUR
25+4.88 EUR
100+4.52 EUR
250+4.3 EUR
500+3.88 EUR
Mindestbestellmenge: 12
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BTS50080-1TMB BTS50080-1TMB INFINEON TECHNOLOGIES BTS50080-1TMB.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.5A; Ch: 1; N-Channel; THT
Case: PG-TO220-7-12
Technology: High Current PROFET
Kind of integrated circuit: high-side
Kind of output: N-Channel
Mounting: THT
On-state resistance: 7mΩ
Number of channels: 1
Supply voltage: 5.5...38V DC
Output current: 9.5A
Type of integrated circuit: power switch
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.31 EUR
14+5.46 EUR
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SPD07N60C3ATMA1 INFINEON TECHNOLOGIES Infineon-SPD_U07N60C3-DS-v02_07-en.pdf?fileId=db3a30433f1b26e8013f1e7536e102d4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; 83W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 83W
Case: DPAK; TO252
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 21nC
Kind of channel: enhancement
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IPP045N10N3GXKSA1 IPP045N10N3GXKSA1 INFINEON TECHNOLOGIES IPP045N10N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 89 Stücke:
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28+2.56 EUR
37+1.97 EUR
50+1.57 EUR
Mindestbestellmenge: 28
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IRF7805ZTRPBF IRF7805ZTRPBF INFINEON TECHNOLOGIES irf7805zpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 2.5W; SO8
Case: SO8
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Power dissipation: 2.5W
Gate-source voltage: ±20V
Drain current: 16A
Drain-source voltage: 30V
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IRF3205ZPBFXKMA1 INFINEON TECHNOLOGIES Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 78A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 78A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRLR3410TRPBF IRLR3410TRPBF INFINEON TECHNOLOGIES irlr3410pbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 4727 Stücke:
Lieferzeit 14-21 Tag (e)
77+0.93 EUR
113+0.63 EUR
141+0.51 EUR
250+0.49 EUR
500+0.46 EUR
1000+0.41 EUR
2000+0.37 EUR
4000+0.34 EUR
Mindestbestellmenge: 77
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BFP405H6327XTSA1 BFP405H6327XTSA1 INFINEON TECHNOLOGIES BFP405.pdf Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 25mA; 0.075W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.5V
Collector current: 25mA
Power dissipation: 75mW
Case: SOT343
Current gain: 90...130
Mounting: SMD
Kind of package: reel; tape
Frequency: 25GHz
Produkt ist nicht verfügbar
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IRLR7843TRPBF IRLR7843TRPBF INFINEON TECHNOLOGIES IRLR7843TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 161A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 161A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 481 Stücke:
Lieferzeit 14-21 Tag (e)
62+1.16 EUR
71+1.02 EUR
77+0.93 EUR
95+0.76 EUR
102+0.7 EUR
250+0.68 EUR
Mindestbestellmenge: 62
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FP15R12W1T4_B3 FP15R12W1T4_B3 INFINEON TECHNOLOGIES FP15R12W1T4B3.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 15A
Case: AG-EASY1B-1
Power dissipation: 130W
Max. off-state voltage: 1.2kV
Collector current: 15A
Pulsed collector current: 30A
Gate-emitter voltage: ±20V
Semiconductor structure: diode/transistor
Technology: EasyPIM™ 1B
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
Mechanical mounting: screw
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
2+44.53 EUR
3+44.02 EUR
Mindestbestellmenge: 2
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FP75R12KT4 FP75R12KT4 INFINEON TECHNOLOGIES FP75R12KT4.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 75A
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-ECONO3-3
Application: Inverter
Electrical mounting: Press-in PCB
Technology: EconoPIM™ 3
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 385W
Max. off-state voltage: 1.2kV
Mechanical mounting: screw
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
auf Bestellung 2 Stücke:
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1+323.04 EUR
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BFP450H6327XTSA1 INFINEON TECHNOLOGIES Infineon-BFP450-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f034c5f3916 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar
Type of transistor: NPN
Polarisation: bipolar
Mounting: SMD
Produkt ist nicht verfügbar
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BFP450H6327 BFP450H6327 INFINEON TECHNOLOGIES BFP450H6327-dte.pdf Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 0.17A; 0.5W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.5V
Collector current: 0.17A
Power dissipation: 0.5W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 24GHz
auf Bestellung 1163 Stücke:
Lieferzeit 14-21 Tag (e)
112+0.64 EUR
128+0.56 EUR
172+0.42 EUR
250+0.38 EUR
Mindestbestellmenge: 112
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TLE6251-2G TLE6251-2G INFINEON TECHNOLOGIES TLE6251-2G.pdf Category: CAN interfaces - integrated circuits
Description: IC: CAN transceiver; 5.5÷18VDC; PG-DSO-14; -40÷150°C; No.of rec: 1
Type of integrated circuit: CAN transceiver
Supply voltage: 5.5...18V DC
Case: PG-DSO-14
Interface: CAN
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 80mA
Produkt ist nicht verfügbar
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S25FL128SAGNFI011 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL128SAGNFI011
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; SPI; 133MHz; 2.7÷3.6V; WSON8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
auf Bestellung 54 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.59 EUR
15+5.05 EUR
Mindestbestellmenge: 13
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S25FL128SAGNFV001 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL128SAGNFV001
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: tube
auf Bestellung 66 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.7 EUR
Mindestbestellmenge: 27
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TLD5097EPXUMA1 Infineon-TLD5097EP-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c620b58a1180e
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; SMPS controller,LED driver; Litix™; PG-TSDSO-14; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: LED driver; SMPS controller
Technology: Litix™
Case: PG-TSDSO-14
Output current: -550...380mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 4.5...45V DC
Protection: overheating OTP
Produkt ist nicht verfügbar
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TLD5098EPXUMA1 Infineon-TLD5098EP-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c620b67681811
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; SMPS controller,LED driver; Litix™; PG-TSDSO-14; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: LED driver; SMPS controller
Technology: Litix™
Case: PG-TSDSO-14
Output current: -550...380mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 4.5...45V DC
Protection: overheating OTP
Produkt ist nicht verfügbar
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IRFB7440PBF IRFB7440PBF.pdf
IRFB7440PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 208A; 208W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 208A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
auf Bestellung 546 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
48+1.5 EUR
70+1.03 EUR
77+0.93 EUR
94+0.77 EUR
100+0.75 EUR
Mindestbestellmenge: 48
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IRL40SC228 infineon-irl40sc228-ds-en.pdf
IRL40SC228
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 557A; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 557A
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.58 EUR
20+3.7 EUR
22+3.3 EUR
26+2.82 EUR
50+2.59 EUR
Mindestbestellmenge: 16
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IPD80R450P7ATMA1 IPD80R450P7.pdf
IPD80R450P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.1A; 73W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.1A
Power dissipation: 73W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: SMD
Gate charge: 24nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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TLE7257SJXUMA1 TLE7257.pdf
TLE7257SJXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-DSO-8
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 3mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 5.5...18V DC
Interface: LIN
Produkt ist nicht verfügbar
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IRS2108PBF irs2108.pdf
IRS2108PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
Produkt ist nicht verfügbar
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IRS21094SPBF irs2109.pdf
IRS21094SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -600...290mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 850ns
Turn-off time: 235ns
Produkt ist nicht verfügbar
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TT122N22KOFHPSA2 TT122N22KOF.pdf
TT122N22KOFHPSA2
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 122A; BG-PB34-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 122A
Case: BG-PB34-1
Max. forward voltage: 1.95V
Max. forward impulse current: 3.3kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IRF7805TRPBF description irf7805pbf.pdf
IRF7805TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; 2.5W; SO8
Case: SO8
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Power dissipation: 2.5W
Gate-source voltage: ±12V
Drain current: 13A
Drain-source voltage: 30V
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPT020N10N5ATMA1 infineon-ipt020n10n5-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 260A; 273W; HSOF-8
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 122nC
On-state resistance: 2mΩ
Drain-source voltage: 100V
Drain current: 260A
Kind of channel: enhancement
Power dissipation: 273W
Case: HSOF-8
Produkt ist nicht verfügbar
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CY7C1470V25-200AXC download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C
Case: TQFP100
Mounting: SMD
Kind of package: in-tray
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: 0...70°C
Supply voltage: 2.5V DC
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Frequency: 200MHz
Kind of interface: parallel
Produkt ist nicht verfügbar
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IPP020N08N5AKSA1 IPP020N08N5-DTE.pdf
IPP020N08N5AKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Kind of channel: enhancement
Technology: OptiMOS™ 5
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 2mΩ
Gate-source voltage: ±20V
Power dissipation: 375W
Drain-source voltage: 80V
Drain current: 120A
Kind of package: tube
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.45 EUR
13+5.81 EUR
15+5.09 EUR
Mindestbestellmenge: 12
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IRL530NSTRLPBF irl530nspbf.pdf
IRL530NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Power dissipation: 3.8W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
auf Bestellung 3685 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+2.03 EUR
48+1.49 EUR
68+1.05 EUR
100+0.9 EUR
125+0.86 EUR
250+0.74 EUR
500+0.66 EUR
800+0.62 EUR
1600+0.57 EUR
Mindestbestellmenge: 36
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CY62256NLL-70SNXCT CY62256N.pdf
CY62256NLL-70SNXCT
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 4.5÷5.5V; 70ns; SO28; 0÷70°C
Kind of package: reel; tape
Operating temperature: 0...70°C
Mounting: SMD
Case: SO28
Type of integrated circuit: SRAM memory
Access time: 70ns
Operating voltage: 4.5...5.5V
Kind of memory: SRAM
Memory organisation: 32kx8bit
Memory: 256kb SRAM
Kind of interface: parallel
Produkt ist nicht verfügbar
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IPAN70R750P7SXKSA1 IPAN70R750P7S.pdf
IPAN70R750P7SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4A; 20.8W; TO220FP; ESD
Case: TO220FP
Mounting: THT
Kind of package: tube
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4A
Gate charge: 8.3nC
Power dissipation: 20.8W
On-state resistance: 0.75Ω
Gate-source voltage: ±16V
auf Bestellung 161 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
117+0.61 EUR
132+0.54 EUR
141+0.51 EUR
148+0.48 EUR
Mindestbestellmenge: 117
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IPU95R750P7AKMA1 IPU95R750P7.pdf
IPU95R750P7AKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 73W; IPAK; ESD
Case: IPAK
Mounting: THT
Kind of package: tube
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 5.5A
Gate charge: 23nC
Power dissipation: 73W
On-state resistance: 0.75Ω
Gate-source voltage: ±20V
auf Bestellung 147 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.06 EUR
40+1.82 EUR
44+1.63 EUR
53+1.36 EUR
62+1.16 EUR
75+1.12 EUR
Mindestbestellmenge: 35
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BSZ100N03LSGATMA1 BSZ100N03LSG-DTE.pdf
BSZ100N03LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 30W; PG-TSDSON-8
Drain-source voltage: 30V
Case: PG-TSDSON-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 10mΩ
Power dissipation: 30W
Drain current: 36A
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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IRLH5030TRPBF irlh5030pbf.pdf
IRLH5030TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; 3.6W; PQFN5X6
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 3.6W
Drain current: 13A
Drain-source voltage: 100V
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Case: PQFN5X6
Produkt ist nicht verfügbar
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IPA80R1K0CEXKSA2 IPA80R1K0CE.pdf
IPA80R1K0CEXKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.6A; Idm: 18A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 18A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 132 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.25 EUR
53+1.37 EUR
57+1.26 EUR
Mindestbestellmenge: 32
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S26HS01GTGABHA030 Infineon-S26HS01GTGABHM020-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017f52f2f5182c91
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 200MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: HyperBus
Operating frequency: 200MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
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S26KL512SDABHV023 download
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 100MHz; 2.7÷3.6V; FBGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Interface: HyperBus
Kind of interface: serial
Operating voltage: 2.7...3.6V
Operating frequency: 100MHz
Produkt ist nicht verfügbar
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S26KS128SDPBHA020 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Interface: HyperBus
Kind of interface: serial
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Application: automotive
Produkt ist nicht verfügbar
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IPD70R360P7SAUMA1 IPD70R360P7S.pdf
IPD70R360P7SAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 59.5W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1316 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
54+1.34 EUR
69+1.05 EUR
83+0.87 EUR
102+0.7 EUR
118+0.61 EUR
Mindestbestellmenge: 54
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IRFP90N20DPBF irfp90n20d.pdf
IRFP90N20DPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 94A; 580W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 94A
Power dissipation: 580W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 587 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.41 EUR
18+4.16 EUR
25+3.79 EUR
100+3.22 EUR
125+3.12 EUR
400+3.02 EUR
Mindestbestellmenge: 14
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SGW50N60HS SGW50N60HS.pdf
SGW50N60HS
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 416W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 50A
Power dissipation: 416W
Case: TO247-3
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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CY7C65630-56LTXC Infineon-CY7C65620_CY7C65630_EZ-USB_HX2LP_LOW_POWER_USB_2.0_HUB_CONTROLLER_FAMILY-DataSheet-v33_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc56b1463f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integra
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: HUB controller; SPI,USB 2.0; 3.15÷3.45VDC; QFN56; Core: 8-bit
Type of integrated circuit: HUB controller
Interface: SPI; USB 2.0
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.45V DC
Case: QFN56
Integrated circuit features: USB HUB
Kind of core: 8-bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C65630-56LTXI Infineon-CY7C65620_CY7C65630_EZ-USB_HX2LP_LOW_POWER_USB_2.0_HUB_CONTROLLER_FAMILY-DataSheet-v33_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc56b1463f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integra
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: HUB controller; SPI,USB 2.0; 3.15÷3.45VDC; PG-VQFN-56
Type of integrated circuit: HUB controller
Interface: SPI; USB 2.0
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3.15...3.45V DC
Case: PG-VQFN-56
Integrated circuit features: USB HUB
Kind of core: 8-bit
Produkt ist nicht verfügbar
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CY7C65631-56LTXC Infineon-CY7C65621_CY7C65631_EZ-USB_HX2LP_Lite_Low_Power_USB_2.0_Hub_Controller_Family-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecaf0514410&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: HUB controller; SPI,USB 2.0; 3.15÷3.45VDC; PG-VQFN-56
Type of integrated circuit: HUB controller
Interface: SPI; USB 2.0
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.45V DC
Case: PG-VQFN-56
Integrated circuit features: USB HUB
Kind of core: 8-bit
Produkt ist nicht verfügbar
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CY7C65632-48AXC download
CY7C65632-48AXC
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: HUB controller; GPIO,I2C,SPI,USB 2.0; 3.15÷3.45VDC; TQFP48
Type of integrated circuit: HUB controller
Interface: GPIO; I2C; SPI; USB 2.0
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.45V DC
Case: TQFP48
Integrated circuit features: USB HUB
Kind of core: 8-bit
Produkt ist nicht verfügbar
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CY7C65632-28LTXC download
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: HUB controller; GPIO,I2C,SPI,USB 2.0; 3.15÷3.45VDC; QFN28
Type of integrated circuit: HUB controller
Interface: GPIO; I2C; SPI; USB 2.0
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.45V DC
Case: QFN28
Integrated circuit features: USB HUB
Kind of core: 8-bit
Produkt ist nicht verfügbar
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CY7C65632-28LTXCT download
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: HUB controller; GPIO,I2C,SPI,USB 2.0; 3.15÷3.45VDC; QFN28
Type of integrated circuit: HUB controller
Interface: GPIO; I2C; SPI; USB 2.0
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.45V DC
Case: QFN28
Integrated circuit features: USB HUB
Kind of core: 8-bit
Produkt ist nicht verfügbar
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CY7C65642-48AXC Infineon-CY7C65642_HX2VL_VERY_LOW-POWER_USB_2.0_TETRAHUB_CONTROLLER-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecba5984534&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C65642-48AXC
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: HUB controller; GPIO,I2C,SPI,USB 2.0; 3.15÷3.45VDC; TQFP48
Type of integrated circuit: HUB controller
Interface: GPIO; I2C; SPI; USB 2.0
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.45V DC
Case: TQFP48
Integrated circuit features: USB HUB
Kind of core: 8-bit
Produkt ist nicht verfügbar
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CY7C65642-48AXCT Infineon-CY7C65642_HX2VL_VERY_LOW-POWER_USB_2.0_TETRAHUB_CONTROLLER-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecba5984534&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C65642-48AXCT
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: HUB controller; GPIO,I2C,SPI,USB 2.0; 3.15÷3.45VDC; TQFP48
Type of integrated circuit: HUB controller
Interface: GPIO; I2C; SPI; USB 2.0
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.45V DC
Case: TQFP48
Integrated circuit features: USB HUB
Kind of core: 8-bit
Produkt ist nicht verfügbar
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IR2011SPBF description IR2011SPBF.pdf
IR2011SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -1...1A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 80ns
Turn-off time: 60ns
auf Bestellung 77 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.76 EUR
47+1.53 EUR
51+1.42 EUR
Mindestbestellmenge: 41
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IR2010PBF IR2010SPBF.pdf
IR2010PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Mounting: THT
Case: DIP14
Supply voltage: 10...20V DC
Operating temperature: -40...125°C
Number of channels: 2
Topology: MOSFET half-bridge
Kind of package: tube
Output current: -3...3A
Turn-off time: 65ns
Turn-on time: 95ns
Power: 1.6W
Voltage class: 200V
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.19 EUR
16+4.7 EUR
Mindestbestellmenge: 14
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IR2085STRPBF Infineon-IR2085S-DS-v01_02-EN.pdf?fileId=5546d4625b62cd8a015bb0f752184828
IR2085STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -1...1A
Power: 1W
Number of channels: 2
Supply voltage: 10...15V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 100V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2011PBF description IR2011SPBF.pdf
IR2011PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -1...1A
Number of channels: 2
Mounting: THT
Operating temperature: -40...125°C
Topology: MOSFET half-bridge
Kind of package: tube
Turn-off time: 60ns
Turn-on time: 80ns
Power: 1W
Supply voltage: 10...20V DC
Voltage class: 200V
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.06 EUR
22+3.36 EUR
25+3.22 EUR
Mindestbestellmenge: 18
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AUIR2085STR auir2085s.pdf?fileId=5546d462533600a4015355a82609133f
AUIR2085STR
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -1...1A
Power: 625mW
Number of channels: 2
Supply voltage: 10...15V DC
Mounting: SMD
Kind of package: reel; tape
Voltage class: 100V
Produkt ist nicht verfügbar
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BCR166E6327 BCR166.pdf
BCR166E6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Mounting: SMD
Case: SOT23
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Frequency: 160MHz
Polarisation: bipolar
Kind of transistor: BRT
auf Bestellung 336 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
285+0.25 EUR
336+0.21 EUR
Mindestbestellmenge: 179
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BCR162E6327 BCR162.pdf
BCR162E6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Mounting: SMD
Case: SOT23
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Frequency: 200MHz
Polarisation: bipolar
Kind of transistor: BRT
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.3 EUR
Mindestbestellmenge: 5
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BSC123N08NS3GATMA1 BSC123N08NS3G-DTE.pdf
BSC123N08NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 66W; PG-TDSON-8
Mounting: SMD
On-state resistance: 12.3mΩ
Drain current: 55A
Gate-source voltage: ±20V
Power dissipation: 66W
Drain-source voltage: 80V
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TDSON-8
auf Bestellung 2424 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
64+1.13 EUR
87+0.82 EUR
103+0.7 EUR
109+0.66 EUR
250+0.63 EUR
500+0.6 EUR
1000+0.54 EUR
2000+0.5 EUR
Mindestbestellmenge: 64
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BTS50055-1TMB BTS50055-1TMB.pdf
BTS50055-1TMB
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 55A; Ch: 1; N-Channel; THT
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 55A
Number of channels: 1
Kind of output: N-Channel
Mounting: THT
Case: PG-TO220-7-11
On-state resistance: 4.4mΩ
Supply voltage: 5...34V DC
Technology: High Current PROFET
Produkt ist nicht verfügbar
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BTS50080-1TEA BTS500801TEA.pdf
BTS50080-1TEA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 10A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-5-11
On-state resistance: 16mΩ
Supply voltage: 5.5...30V DC
Technology: High Current PROFET
Output voltage: 39V
auf Bestellung 348 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.16 EUR
21+3.47 EUR
100+2.95 EUR
Mindestbestellmenge: 14
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BTS50080-1TMA BTS50080-1TMA.pdf
BTS50080-1TMA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.5A; Ch: 1; N-Channel; SMD
Case: PG-TO220-7-4
Technology: High Current PROFET
Kind of integrated circuit: high-side
Kind of output: N-Channel
Mounting: SMD
On-state resistance: 7mΩ
Number of channels: 1
Supply voltage: 5.5...38V DC
Output current: 9.5A
Type of integrated circuit: power switch
auf Bestellung 974 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.45 EUR
14+5.42 EUR
25+4.88 EUR
100+4.52 EUR
250+4.3 EUR
500+3.88 EUR
Mindestbestellmenge: 12
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BTS50080-1TMB BTS50080-1TMB.pdf
BTS50080-1TMB
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.5A; Ch: 1; N-Channel; THT
Case: PG-TO220-7-12
Technology: High Current PROFET
Kind of integrated circuit: high-side
Kind of output: N-Channel
Mounting: THT
On-state resistance: 7mΩ
Number of channels: 1
Supply voltage: 5.5...38V DC
Output current: 9.5A
Type of integrated circuit: power switch
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.31 EUR
14+5.46 EUR
Mindestbestellmenge: 10
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SPD07N60C3ATMA1 Infineon-SPD_U07N60C3-DS-v02_07-en.pdf?fileId=db3a30433f1b26e8013f1e7536e102d4
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; 83W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 83W
Case: DPAK; TO252
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 21nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP045N10N3GXKSA1 IPP045N10N3G-DTE.pdf
IPP045N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 89 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.56 EUR
37+1.97 EUR
50+1.57 EUR
Mindestbestellmenge: 28
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IRF7805ZTRPBF irf7805zpbf.pdf
IRF7805ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 2.5W; SO8
Case: SO8
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Power dissipation: 2.5W
Gate-source voltage: ±20V
Drain current: 16A
Drain-source voltage: 30V
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IRF3205ZPBFXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 78A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 78A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRLR3410TRPBF description irlr3410pbf.pdf
IRLR3410TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 4727 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
77+0.93 EUR
113+0.63 EUR
141+0.51 EUR
250+0.49 EUR
500+0.46 EUR
1000+0.41 EUR
2000+0.37 EUR
4000+0.34 EUR
Mindestbestellmenge: 77
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BFP405H6327XTSA1 BFP405.pdf
BFP405H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 25mA; 0.075W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.5V
Collector current: 25mA
Power dissipation: 75mW
Case: SOT343
Current gain: 90...130
Mounting: SMD
Kind of package: reel; tape
Frequency: 25GHz
Produkt ist nicht verfügbar
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IRLR7843TRPBF IRLR7843TRPBF.pdf
IRLR7843TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 161A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 161A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 481 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
62+1.16 EUR
71+1.02 EUR
77+0.93 EUR
95+0.76 EUR
102+0.7 EUR
250+0.68 EUR
Mindestbestellmenge: 62
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FP15R12W1T4_B3 FP15R12W1T4B3.pdf
FP15R12W1T4_B3
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 15A
Case: AG-EASY1B-1
Power dissipation: 130W
Max. off-state voltage: 1.2kV
Collector current: 15A
Pulsed collector current: 30A
Gate-emitter voltage: ±20V
Semiconductor structure: diode/transistor
Technology: EasyPIM™ 1B
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
Mechanical mounting: screw
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+44.53 EUR
3+44.02 EUR
Mindestbestellmenge: 2
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FP75R12KT4 FP75R12KT4.pdf
FP75R12KT4
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 75A
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Case: AG-ECONO3-3
Application: Inverter
Electrical mounting: Press-in PCB
Technology: EconoPIM™ 3
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 385W
Max. off-state voltage: 1.2kV
Mechanical mounting: screw
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+323.04 EUR
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BFP450H6327XTSA1 Infineon-BFP450-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f034c5f3916
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar
Type of transistor: NPN
Polarisation: bipolar
Mounting: SMD
Produkt ist nicht verfügbar
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BFP450H6327 BFP450H6327-dte.pdf
BFP450H6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 0.17A; 0.5W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.5V
Collector current: 0.17A
Power dissipation: 0.5W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 24GHz
auf Bestellung 1163 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
112+0.64 EUR
128+0.56 EUR
172+0.42 EUR
250+0.38 EUR
Mindestbestellmenge: 112
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TLE6251-2G TLE6251-2G.pdf
TLE6251-2G
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: CAN transceiver; 5.5÷18VDC; PG-DSO-14; -40÷150°C; No.of rec: 1
Type of integrated circuit: CAN transceiver
Supply voltage: 5.5...18V DC
Case: PG-DSO-14
Interface: CAN
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 80mA
Produkt ist nicht verfügbar
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