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IKA08N65F5XKSA1 INFINEON TECHNOLOGIES DS_IKA08N65F5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013af92196985c58 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 6.8A; 15.6W; TO220FP; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 15.6W
Case: TO220FP
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Collector current: 6.8A
Pulsed collector current: 24A
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 650V
Manufacturer series: F5
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22+3.35 EUR
29+2.49 EUR
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IKP30N65F5XKSA1 IKP30N65F5XKSA1 INFINEON TECHNOLOGIES IKP30N65F5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 93W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 93W
Case: TO220-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 22ns
Turn-off time: 189ns
Gate-emitter voltage: ±20V
Collector current: 35A
Pulsed collector current: 90A
Produkt ist nicht verfügbar
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IPZ60R040C7XKSA1 IPZ60R040C7XKSA1 INFINEON TECHNOLOGIES IPZ60R040C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 227W
Case: PG-TO247-4
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: CoolMOS™ C7
auf Bestellung 18 Stücke:
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5+16.59 EUR
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IMZA65R048M1HXKSA1 IMZA65R048M1HXKSA1 INFINEON TECHNOLOGIES Infineon-IMZA65R048M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85d9ac090535 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 24A; Idm: 100A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 100A
Power dissipation: 125W
Case: TO247-4
Gate-source voltage: -5...23V
On-state resistance: 63mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
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IPP65R110CFDXKSA1 IPP65R110CFDXKSA1 INFINEON TECHNOLOGIES IPP65R110CFD-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31.2A
Power dissipation: 277.8W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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BSS606NH6327XTSA1 BSS606NH6327XTSA1 INFINEON TECHNOLOGIES BSS606NH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 3.2A
Power dissipation: 1W
Case: PG-SOT89
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
Technology: OptiMOS™ 3
auf Bestellung 647 Stücke:
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147+0.49 EUR
231+0.31 EUR
500+0.22 EUR
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PVI5033RSPBF PVI5033RSPBF INFINEON TECHNOLOGIES IRSDS10627-1.pdf?t.download=true&u=5oefqw Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 3.75kV
Case: Gull wing 8
Turn-on time: 2.5ms
Turn-off time: 5ms
Manufacturer series: PVI5033RPbF
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7+11.43 EUR
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PVI5033RS-TPBF PVI5033RS-TPBF INFINEON TECHNOLOGIES PVI5033RS-TPBF.pdf Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 3.75kV
Case: Gull wing 8
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Manufacturer series: PVI5033RPbF
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IRS2982STRPBF IRS2982STRPBF INFINEON TECHNOLOGIES IRS2982S-DTE.pdf Category: LED drivers
Description: IC: driver; flyback; SMPS controller,LED driver; PG-DSO-8; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: LED driver; SMPS controller
Case: PG-DSO-8
Output current: 200...400mA
Number of channels: 1
Integrated circuit features: PWM
Mounting: SMD
Operating voltage: 12.8...18V DC
Topology: flyback
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IRS2548DSTRPBF IRS2548DSTRPBF INFINEON TECHNOLOGIES IRS2548D-DTE.pdf Category: LED drivers
Description: IC: driver; boost; PFC controller,SMPS controller,LED driver
Type of integrated circuit: driver
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Case: SO14
Output current: 0.5A
Number of channels: 1
Integrated circuit features: dead time; PWM
Mounting: SMD
Operating voltage: 10.5...15.6V DC
Topology: boost
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ESD130B1W0201E6327XTSA1 INFINEON TECHNOLOGIES Infineon-ESD130-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d46255a50e820155c02811e9592e Category: Diodes - Unclassified
Description: ESD130B1W0201E6327XTSA1
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BTS443P BTS443P INFINEON TECHNOLOGIES BTS443P_DS_v10.pdf description Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.3A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
Supply voltage: 5...36V DC
Technology: High Current PROFET
Output voltage: 43V
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BTS443PAUMA1 INFINEON TECHNOLOGIES Infineon-BTS443P-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa9afbc5035d5 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.3A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
Number of channels: 1
Output current: 2.3A
Supply voltage: 5...36V DC
Technology: High Current PROFET
Output voltage: 43V
Kind of integrated circuit: high-side
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BTS443PAUMA1 INFINEON TECHNOLOGIES Infineon-BTS443P-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa9afbc5035d5 Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
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BSC155N06NDATMA1 INFINEON TECHNOLOGIES Infineon-BSC155N06ND-DS-v02_00-EN.pdf?fileId=5546d462689a790c016905fc90d60cec Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 60V; 20A; 50W; PG-TDSON-8-4
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 50W
Case: PG-TDSON-8-4
Gate-source voltage: 20V
Mounting: SMD
Gate charge: 29nC
Kind of channel: enhancement
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PVG612PBF INFINEON TECHNOLOGIES pvg612.pdf?fileId=5546d462533600a401535683c1892937 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; 2A
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 2A
Manufacturer series: PVG612
Relay variant: PhotoMOS
On-state resistance: 0.5Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Insulation voltage: 4kV
Leads: for PCB
Kind of output: MOSFET
Body dimensions: 8.6x6.5x3.4mm
Control current max.: 25mA
Number of poles: 1
Control voltage: 1.2V DC
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PVG612APBF INFINEON TECHNOLOGIES pvg612a.pdf?fileId=5546d462533600a401535683ca14293a Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; 2A
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 2A
On-state resistance: 0.1Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Insulation voltage: 4kV
Leads: for PCB
Kind of output: MOSFET
Turn-off time: 0.5ms
Turn-on time: 3.5ms
Body dimensions: 8.63x6.47x3.42mm
Control current max.: 25mA
Control voltage: 1.2V DC
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IRFP3710PBF IRFP3710PBF INFINEON TECHNOLOGIES irfp3710.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 51A; 180W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 51A
Power dissipation: 180W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 66.7nC
Kind of package: tube
Kind of channel: enhancement
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27+2.7 EUR
30+2.45 EUR
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IRFP3415PBF IRFP3415PBF INFINEON TECHNOLOGIES irfp3415.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Power dissipation: 200W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 133.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 70 Stücke:
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30+2.43 EUR
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IRFP3703PBF IRFP3703PBF INFINEON TECHNOLOGIES irfp3703.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 210A; 230W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 210A
Power dissipation: 230W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: THT
Gate charge: 209nC
Kind of package: tube
Kind of channel: enhancement
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1+71.5 EUR
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BCR08PNH6327 BCR08PNH6327 INFINEON TECHNOLOGIES BCR08PNH6327.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 170MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
auf Bestellung 2610 Stücke:
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365+0.2 EUR
410+0.17 EUR
465+0.15 EUR
535+0.13 EUR
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BCR08PNH6327XTSA1 INFINEON TECHNOLOGIES bcr08pn.pdf?folderId=db3a30431428a37301144053a52002e2&fileId=db3a30431428a37301144068b8bc02fd Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; 50V; 100mA; 250mW; SC88,SOT363
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC88; SOT363
Current gain: 70
Mounting: SMD
Frequency: 170MHz
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
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IRFP4368PBF IRFP4368PBF INFINEON TECHNOLOGIES irfp4368pbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 350A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 350A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 380nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IR4426STRPBF INFINEON TECHNOLOGIES ir4426.pdf?fileId=5546d462533600a4015355d60b491822 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC8; 1.5A; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: SOIC8
Output current: 1.5A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
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ISA150233C03LMDSXTMA1 INFINEON TECHNOLOGIES Infineon-ISA150233C03LMDS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d2ed4aca62c5 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Mounting: SMD
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IPP030N10N5XKSA1 IPP030N10N5XKSA1 INFINEON TECHNOLOGIES Infineon-IPP030N10N5-DS-v02_03-EN.pdf?fileId=5546d4624a75e5f1014ac4e0b47c1f49 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 250W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 250W
Case: TO220-3
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 112nC
Kind of channel: enhancement
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14+5.16 EUR
16+4.65 EUR
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IPP030N10N3GXKSA1 IPP030N10N3GXKSA1 INFINEON TECHNOLOGIES IPP030N10N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO220-3
On-state resistance: 3mΩ
Mounting: THT
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: OptiMOS™ 3
Kind of package: tube
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15+5.03 EUR
17+4.2 EUR
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IPI030N10N3GXKSA1 IPI030N10N3GXKSA1 INFINEON TECHNOLOGIES IPI030N10N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO262-3
On-state resistance: 3mΩ
Mounting: THT
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: OptiMOS™ 3
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ISC030N10NM6ATMA1 INFINEON TECHNOLOGIES Infineon-ISC030N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bb9a9887300a4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 179A; 208W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 179A
Power dissipation: 208W
Case: PG-TDSON-8 FL
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 55nC
Kind of channel: enhancement
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IPA030N10NF2SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA030N10NF2S-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0179176bf1c41165 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 83A; 41W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 83A
Power dissipation: 41W
Case: TO220FP
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 154nC
Kind of channel: enhancement
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IRGP4066DPBF IRGP4066DPBF INFINEON TECHNOLOGIES IRGP4066DPBF.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 454W; TO247-3
Mounting: THT
Case: TO247-3
Collector current: 75A
Power dissipation: 454W
Collector-emitter voltage: 600V
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
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AUIRGP4066D1 AUIRGP4066D1 INFINEON TECHNOLOGIES AUIRGP4066D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 90A; 227W; TO247AC
Mounting: THT
Case: TO247AC
Gate charge: 225nC
Turn-off time: 320ns
Gate-emitter voltage: ±20V
Collector current: 90A
Pulsed collector current: 225A
Power dissipation: 227W
Collector-emitter voltage: 600V
Technology: Trench
Type of transistor: IGBT
Kind of package: tube
Turn-on time: 115ns
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2ED2106S06FXUMA1 2ED2106S06FXUMA1 INFINEON TECHNOLOGIES infineon-2ed2182-4-s06f-j-datasheet-en.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Mounting: SMD
Case: PG-DSO-8
Kind of package: reel; tape
Protection: undervoltage UVP
Output current: -0.7...0.29A
Number of channels: 2
Voltage class: 650V
Supply voltage: 10...20V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Integrated circuit features: integrated bootstrap functionality
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2ED21064S06JXUMA1 INFINEON TECHNOLOGIES Infineon-2ED2106-4-S06F-J-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d7402029e7 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-14
Output current: -0.7...0.29A
Number of channels: 2
Mounting: SMD
Kind of package: reel; tape
Protection: undervoltage UVP
Integrated circuit features: integrated bootstrap functionality
Supply voltage: 10...20V
Topology: IGBT half-bridge; MOSFET half-bridge
Voltage class: 650V
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IPP037N08N3GXKSA1 IPP037N08N3GXKSA1 INFINEON TECHNOLOGIES IPP037N08N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.16 EUR
50+1.44 EUR
Mindestbestellmenge: 23
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IPP037N06L3GXKSA1 IPP037N06L3GXKSA1 INFINEON TECHNOLOGIES IPP037N06L3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 167W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 167W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP030N06NF2SAKMA1 IPP030N06NF2SAKMA1 INFINEON TECHNOLOGIES Infineon-IPP030N06NF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80f4d3290180fd60b8793c83 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 119A; 150W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 119A
Power dissipation: 150W
Case: TO220-3
On-state resistance: 3.05mΩ
Mounting: THT
Gate charge: 68nC
Kind of channel: enhancement
auf Bestellung 108 Stücke:
Lieferzeit 14-21 Tag (e)
52+1.4 EUR
60+1.21 EUR
63+1.14 EUR
72+1 EUR
100+0.89 EUR
Mindestbestellmenge: 52
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SMBTA06UPNE6327HTSA1 SMBTA06UPNE6327HTSA1 INFINEON TECHNOLOGIES SMBTA06UPNE6327.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 80V; 0.5A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SC74
Mounting: SMD
Frequency: 100MHz
Kind of transistor: complementary pair
Produkt ist nicht verfügbar
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SMBTA06E6327 SMBTA06E6327 INFINEON TECHNOLOGIES SMBTA06E6327.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Produkt ist nicht verfügbar
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FM24CL16B-G FM24CL16B-G INFINEON TECHNOLOGIES Infineon-FM24CL16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec99cb241e9 Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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IPB024N10N5ATMA1 INFINEON TECHNOLOGIES Infineon-IPB024N10N5-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf0159ef08d94417f4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 180A; 250W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Gate-source voltage: 20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 138nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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S25FL032P0XMFA010 S25FL032P0XMFA010 INFINEON TECHNOLOGIES Infineon-S25FL032P_32-Mbit_3.0_V_Flash_Memory-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed4e2dd5369&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 32MbFLASH; SPI; 104MHz; 2.7÷3.6V; SO8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 32Mb FLASH
Interface: SPI
Operating frequency: 104MHz
Operating voltage: 2.7...3.6V
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
auf Bestellung 759 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.15 EUR
Mindestbestellmenge: 14
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S25FL064LABMFI010 S25FL064LABMFI010 INFINEON TECHNOLOGIES infineon-s25fl064l-64-mbit-8-mbyte-3-datasheet-en.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; SPI; 108MHz; 2.7÷3.6V; SO8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
auf Bestellung 669 Stücke:
Lieferzeit 14-21 Tag (e)
15+5 EUR
16+4.52 EUR
25+3.92 EUR
100+3.76 EUR
Mindestbestellmenge: 15
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IPB100N04S4H2ATMA1 INFINEON TECHNOLOGIES Infineon-IPP_B_I100N04S4_H2-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c2758925d17&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; D2PAK-3
Case: D2PAK-3
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 90nC
On-state resistance: 2.1mΩ
Power dissipation: 115W
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPC100N04S5-2R8 IPC100N04S5-2R8 INFINEON TECHNOLOGIES IPC100N04S52R8.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 75W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 45nC
On-state resistance: 2.8mΩ
Power dissipation: 75W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPC100N04S5-1R9 IPC100N04S5-1R9 INFINEON TECHNOLOGIES IPC100N04S51R9.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 65nC
On-state resistance: 1.9mΩ
Power dissipation: 100W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPC100N04S5L-1R5 IPC100N04S5L-1R5 INFINEON TECHNOLOGIES IPC100N04S5L1R5.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 95nC
On-state resistance: 1.5mΩ
Power dissipation: 115W
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB100N04S303ATMA1 IPB100N04S303ATMA1 INFINEON TECHNOLOGIES IPB100N04S303.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 100A; 214W
Case: PG-TO263-3
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ T
Polarisation: unipolar
Gate charge: 110nC
On-state resistance: 2.5mΩ
Power dissipation: 214W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPC100N04S5-1R2 IPC100N04S5-1R2 INFINEON TECHNOLOGIES IPC100N04S51R2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 131nC
On-state resistance: 1.2mΩ
Power dissipation: 150W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPC100N04S5-1R7 IPC100N04S5-1R7 INFINEON TECHNOLOGIES IPC100N04S51R7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 83nC
On-state resistance: 1.7mΩ
Power dissipation: 115W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPC100N04S5L-1R1 IPC100N04S5L-1R1 INFINEON TECHNOLOGIES IPC100N04S5L1R1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 0.14µC
On-state resistance: 1.1mΩ
Power dissipation: 150W
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPC100N04S5L-1R9 IPC100N04S5L-1R9 INFINEON TECHNOLOGIES IPC100N04S5L1R9.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 81nC
On-state resistance: 1.9mΩ
Power dissipation: 100W
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPC100N04S5L-2R6 IPC100N04S5L-2R6 INFINEON TECHNOLOGIES IPC100N04S5L2R6.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 75W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 55nC
On-state resistance: 2.6mΩ
Power dissipation: 75W
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUC100N04S6L014ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N04S6L014-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c35a9690def Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A
Case: PG-TDSON-8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Gate charge: 65nC
On-state resistance: 2mΩ
Power dissipation: 100W
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUC100N04S6L020ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N04S6L020-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c5a4e5b0dfa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A
Case: PG-TDSON-8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Gate charge: 46nC
On-state resistance: 2.7mΩ
Power dissipation: 75W
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPN80R4K5P7ATMA1 IPN80R4K5P7ATMA1 INFINEON TECHNOLOGIES IPN80R4K5P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 6W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 4nC
On-state resistance: 4.5Ω
Drain current: 1A
Power dissipation: 6W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
auf Bestellung 2055 Stücke:
Lieferzeit 14-21 Tag (e)
75+0.96 EUR
93+0.77 EUR
106+0.68 EUR
135+0.53 EUR
Mindestbestellmenge: 75
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IPN80R1K4P7ATMA1 IPN80R1K4P7ATMA1 INFINEON TECHNOLOGIES IPN80R1K4P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 7W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 10nC
On-state resistance: 1.4Ω
Drain current: 2.7A
Power dissipation: 7W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPN80R1K2P7ATMA1 IPN80R1K2P7ATMA1 INFINEON TECHNOLOGIES IPN80R1K2P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 6.8W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 11nC
On-state resistance: 1.2Ω
Drain current: 3.1A
Power dissipation: 6.8W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPN80R750P7ATMA1 IPN80R750P7ATMA1 INFINEON TECHNOLOGIES IPN80R750P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 7.2W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 17nC
On-state resistance: 0.75Ω
Drain current: 4.6A
Power dissipation: 7.2W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPN80R2K4P7ATMA1 IPN80R2K4P7ATMA1 INFINEON TECHNOLOGIES IPN80R2K4P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.7A; 6.3W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 8nC
On-state resistance: 2.4Ω
Drain current: 1.7A
Power dissipation: 6.3W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IKA08N65F5XKSA1 DS_IKA08N65F5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013af92196985c58
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 6.8A; 15.6W; TO220FP; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 15.6W
Case: TO220FP
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Collector current: 6.8A
Pulsed collector current: 24A
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 650V
Manufacturer series: F5
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.35 EUR
29+2.49 EUR
Mindestbestellmenge: 22
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IKP30N65F5XKSA1 IKP30N65F5.pdf
IKP30N65F5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 93W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 93W
Case: TO220-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 22ns
Turn-off time: 189ns
Gate-emitter voltage: ±20V
Collector current: 35A
Pulsed collector current: 90A
Produkt ist nicht verfügbar
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IPZ60R040C7XKSA1 IPZ60R040C7-DTE.pdf
IPZ60R040C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 227W
Case: PG-TO247-4
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: CoolMOS™ C7
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+16.59 EUR
Mindestbestellmenge: 5
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IMZA65R048M1HXKSA1 Infineon-IMZA65R048M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85d9ac090535
IMZA65R048M1HXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 24A; Idm: 100A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 100A
Power dissipation: 125W
Case: TO247-4
Gate-source voltage: -5...23V
On-state resistance: 63mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
auf Bestellung 192 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.35 EUR
10+7.21 EUR
Mindestbestellmenge: 8
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IPP65R110CFDXKSA1 IPP65R110CFD-DTE.pdf
IPP65R110CFDXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31.2A
Power dissipation: 277.8W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSS606NH6327XTSA1 BSS606NH6327XTSA1.pdf
BSS606NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 3.2A
Power dissipation: 1W
Case: PG-SOT89
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
Technology: OptiMOS™ 3
auf Bestellung 647 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.72 EUR
147+0.49 EUR
231+0.31 EUR
500+0.22 EUR
Mindestbestellmenge: 100
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PVI5033RSPBF IRSDS10627-1.pdf?t.download=true&u=5oefqw
PVI5033RSPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 3.75kV
Case: Gull wing 8
Turn-on time: 2.5ms
Turn-off time: 5ms
Manufacturer series: PVI5033RPbF
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.84 EUR
7+11.43 EUR
25+10.04 EUR
Mindestbestellmenge: 6
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PVI5033RS-TPBF PVI5033RS-TPBF.pdf
PVI5033RS-TPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 3.75kV
Case: Gull wing 8
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Manufacturer series: PVI5033RPbF
Produkt ist nicht verfügbar
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IRS2982STRPBF IRS2982S-DTE.pdf
IRS2982STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; flyback; SMPS controller,LED driver; PG-DSO-8; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: LED driver; SMPS controller
Case: PG-DSO-8
Output current: 200...400mA
Number of channels: 1
Integrated circuit features: PWM
Mounting: SMD
Operating voltage: 12.8...18V DC
Topology: flyback
Produkt ist nicht verfügbar
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IRS2548DSTRPBF IRS2548D-DTE.pdf
IRS2548DSTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; boost; PFC controller,SMPS controller,LED driver
Type of integrated circuit: driver
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Case: SO14
Output current: 0.5A
Number of channels: 1
Integrated circuit features: dead time; PWM
Mounting: SMD
Operating voltage: 10.5...15.6V DC
Topology: boost
Produkt ist nicht verfügbar
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ESD130B1W0201E6327XTSA1 Infineon-ESD130-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d46255a50e820155c02811e9592e
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - Unclassified
Description: ESD130B1W0201E6327XTSA1
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15000+0.037 EUR
Mindestbestellmenge: 15000
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BTS443P description BTS443P_DS_v10.pdf
BTS443P
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.3A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
Supply voltage: 5...36V DC
Technology: High Current PROFET
Output voltage: 43V
Produkt ist nicht verfügbar
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BTS443PAUMA1 Infineon-BTS443P-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa9afbc5035d5
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.3A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
Number of channels: 1
Output current: 2.3A
Supply voltage: 5...36V DC
Technology: High Current PROFET
Output voltage: 43V
Kind of integrated circuit: high-side
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS443PAUMA1 Infineon-BTS443P-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa9afbc5035d5
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
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BSC155N06NDATMA1 Infineon-BSC155N06ND-DS-v02_00-EN.pdf?fileId=5546d462689a790c016905fc90d60cec
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 60V; 20A; 50W; PG-TDSON-8-4
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 50W
Case: PG-TDSON-8-4
Gate-source voltage: 20V
Mounting: SMD
Gate charge: 29nC
Kind of channel: enhancement
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.61 EUR
Mindestbestellmenge: 5000
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PVG612PBF pvg612.pdf?fileId=5546d462533600a401535683c1892937
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; 2A
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 2A
Manufacturer series: PVG612
Relay variant: PhotoMOS
On-state resistance: 0.5Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Insulation voltage: 4kV
Leads: for PCB
Kind of output: MOSFET
Body dimensions: 8.6x6.5x3.4mm
Control current max.: 25mA
Number of poles: 1
Control voltage: 1.2V DC
auf Bestellung 521 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+6.98 EUR
Mindestbestellmenge: 50
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PVG612APBF pvg612a.pdf?fileId=5546d462533600a401535683ca14293a
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; 2A
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 2A
On-state resistance: 0.1Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Insulation voltage: 4kV
Leads: for PCB
Kind of output: MOSFET
Turn-off time: 0.5ms
Turn-on time: 3.5ms
Body dimensions: 8.63x6.47x3.42mm
Control current max.: 25mA
Control voltage: 1.2V DC
auf Bestellung 3618 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+9.74 EUR
Mindestbestellmenge: 50
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IRFP3710PBF irfp3710.pdf
IRFP3710PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 51A; 180W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 51A
Power dissipation: 180W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 66.7nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.7 EUR
30+2.45 EUR
31+2.33 EUR
Mindestbestellmenge: 27
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IRFP3415PBF irfp3415.pdf
IRFP3415PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Power dissipation: 200W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 133.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.97 EUR
30+2.43 EUR
32+2.29 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
IRFP3703PBF irfp3703.pdf
IRFP3703PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 210A; 230W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 210A
Power dissipation: 230W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: THT
Gate charge: 209nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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BCR08PNH6327 BCR08PNH6327.pdf
BCR08PNH6327
Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 170MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
auf Bestellung 2610 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
365+0.2 EUR
410+0.17 EUR
465+0.15 EUR
535+0.13 EUR
Mindestbestellmenge: 365
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BCR08PNH6327XTSA1 bcr08pn.pdf?folderId=db3a30431428a37301144053a52002e2&fileId=db3a30431428a37301144068b8bc02fd
Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; 50V; 100mA; 250mW; SC88,SOT363
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC88; SOT363
Current gain: 70
Mounting: SMD
Frequency: 170MHz
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
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IRFP4368PBF description irfp4368pbf.pdf
IRFP4368PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 350A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 350A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 380nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IR4426STRPBF ir4426.pdf?fileId=5546d462533600a4015355d60b491822
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC8; 1.5A; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: SOIC8
Output current: 1.5A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
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ISA150233C03LMDSXTMA1 Infineon-ISA150233C03LMDS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d2ed4aca62c5
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP030N10N5XKSA1 Infineon-IPP030N10N5-DS-v02_03-EN.pdf?fileId=5546d4624a75e5f1014ac4e0b47c1f49
IPP030N10N5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 250W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 250W
Case: TO220-3
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 112nC
Kind of channel: enhancement
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.16 EUR
16+4.65 EUR
Mindestbestellmenge: 14
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IPP030N10N3GXKSA1 IPP030N10N3G-DTE.pdf
IPP030N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO220-3
On-state resistance: 3mΩ
Mounting: THT
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: OptiMOS™ 3
Kind of package: tube
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5.03 EUR
17+4.2 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IPI030N10N3GXKSA1 IPI030N10N3G-DTE.pdf
IPI030N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO262-3
On-state resistance: 3mΩ
Mounting: THT
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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ISC030N10NM6ATMA1 Infineon-ISC030N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bb9a9887300a4
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 179A; 208W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 179A
Power dissipation: 208W
Case: PG-TDSON-8 FL
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 55nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA030N10NF2SXKSA1 Infineon-IPA030N10NF2S-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0179176bf1c41165
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 83A; 41W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 83A
Power dissipation: 41W
Case: TO220FP
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 154nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRGP4066DPBF IRGP4066DPBF.pdf
IRGP4066DPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 454W; TO247-3
Mounting: THT
Case: TO247-3
Collector current: 75A
Power dissipation: 454W
Collector-emitter voltage: 600V
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Produkt ist nicht verfügbar
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AUIRGP4066D1 AUIRGP4066D1.pdf
AUIRGP4066D1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 90A; 227W; TO247AC
Mounting: THT
Case: TO247AC
Gate charge: 225nC
Turn-off time: 320ns
Gate-emitter voltage: ±20V
Collector current: 90A
Pulsed collector current: 225A
Power dissipation: 227W
Collector-emitter voltage: 600V
Technology: Trench
Type of transistor: IGBT
Kind of package: tube
Turn-on time: 115ns
Produkt ist nicht verfügbar
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2ED2106S06FXUMA1 infineon-2ed2182-4-s06f-j-datasheet-en.pdf
2ED2106S06FXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Mounting: SMD
Case: PG-DSO-8
Kind of package: reel; tape
Protection: undervoltage UVP
Output current: -0.7...0.29A
Number of channels: 2
Voltage class: 650V
Supply voltage: 10...20V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Integrated circuit features: integrated bootstrap functionality
Produkt ist nicht verfügbar
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2ED21064S06JXUMA1 Infineon-2ED2106-4-S06F-J-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d7402029e7
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-14
Output current: -0.7...0.29A
Number of channels: 2
Mounting: SMD
Kind of package: reel; tape
Protection: undervoltage UVP
Integrated circuit features: integrated bootstrap functionality
Supply voltage: 10...20V
Topology: IGBT half-bridge; MOSFET half-bridge
Voltage class: 650V
Produkt ist nicht verfügbar
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IPP037N08N3GXKSA1 IPP037N08N3G-DTE.pdf
IPP037N08N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.16 EUR
50+1.44 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
IPP037N06L3GXKSA1 IPP037N06L3G-DTE.pdf
IPP037N06L3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 167W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 167W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP030N06NF2SAKMA1 Infineon-IPP030N06NF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80f4d3290180fd60b8793c83
IPP030N06NF2SAKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 119A; 150W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 119A
Power dissipation: 150W
Case: TO220-3
On-state resistance: 3.05mΩ
Mounting: THT
Gate charge: 68nC
Kind of channel: enhancement
auf Bestellung 108 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
52+1.4 EUR
60+1.21 EUR
63+1.14 EUR
72+1 EUR
100+0.89 EUR
Mindestbestellmenge: 52
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SMBTA06UPNE6327HTSA1 SMBTA06UPNE6327.pdf
SMBTA06UPNE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 80V; 0.5A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SC74
Mounting: SMD
Frequency: 100MHz
Kind of transistor: complementary pair
Produkt ist nicht verfügbar
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SMBTA06E6327 SMBTA06E6327.pdf
SMBTA06E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Produkt ist nicht verfügbar
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FM24CL16B-G Infineon-FM24CL16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec99cb241e9
FM24CL16B-G
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: I2C
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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IPB024N10N5ATMA1 Infineon-IPB024N10N5-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf0159ef08d94417f4
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 180A; 250W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Gate-source voltage: 20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 138nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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S25FL032P0XMFA010 Infineon-S25FL032P_32-Mbit_3.0_V_Flash_Memory-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed4e2dd5369&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL032P0XMFA010
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 32MbFLASH; SPI; 104MHz; 2.7÷3.6V; SO8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 32Mb FLASH
Interface: SPI
Operating frequency: 104MHz
Operating voltage: 2.7...3.6V
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
auf Bestellung 759 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.15 EUR
Mindestbestellmenge: 14
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S25FL064LABMFI010 infineon-s25fl064l-64-mbit-8-mbyte-3-datasheet-en.pdf
S25FL064LABMFI010
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; SPI; 108MHz; 2.7÷3.6V; SO8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
auf Bestellung 669 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5 EUR
16+4.52 EUR
25+3.92 EUR
100+3.76 EUR
Mindestbestellmenge: 15
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IPB100N04S4H2ATMA1 Infineon-IPP_B_I100N04S4_H2-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c2758925d17&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; D2PAK-3
Case: D2PAK-3
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 90nC
On-state resistance: 2.1mΩ
Power dissipation: 115W
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPC100N04S5-2R8 IPC100N04S52R8.pdf
IPC100N04S5-2R8
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 75W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 45nC
On-state resistance: 2.8mΩ
Power dissipation: 75W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPC100N04S5-1R9 IPC100N04S51R9.pdf
IPC100N04S5-1R9
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 65nC
On-state resistance: 1.9mΩ
Power dissipation: 100W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPC100N04S5L-1R5 IPC100N04S5L1R5.pdf
IPC100N04S5L-1R5
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 95nC
On-state resistance: 1.5mΩ
Power dissipation: 115W
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB100N04S303ATMA1 IPB100N04S303.pdf
IPB100N04S303ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 100A; 214W
Case: PG-TO263-3
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ T
Polarisation: unipolar
Gate charge: 110nC
On-state resistance: 2.5mΩ
Power dissipation: 214W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPC100N04S5-1R2 IPC100N04S51R2.pdf
IPC100N04S5-1R2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 131nC
On-state resistance: 1.2mΩ
Power dissipation: 150W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPC100N04S5-1R7 IPC100N04S51R7.pdf
IPC100N04S5-1R7
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 83nC
On-state resistance: 1.7mΩ
Power dissipation: 115W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPC100N04S5L-1R1 IPC100N04S5L1R1.pdf
IPC100N04S5L-1R1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 0.14µC
On-state resistance: 1.1mΩ
Power dissipation: 150W
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPC100N04S5L-1R9 IPC100N04S5L1R9.pdf
IPC100N04S5L-1R9
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 81nC
On-state resistance: 1.9mΩ
Power dissipation: 100W
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPC100N04S5L-2R6 IPC100N04S5L2R6.pdf
IPC100N04S5L-2R6
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 75W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 55nC
On-state resistance: 2.6mΩ
Power dissipation: 75W
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUC100N04S6L014ATMA1 Infineon-IAUC100N04S6L014-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c35a9690def
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A
Case: PG-TDSON-8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Gate charge: 65nC
On-state resistance: 2mΩ
Power dissipation: 100W
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUC100N04S6L020ATMA1 Infineon-IAUC100N04S6L020-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c5a4e5b0dfa
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A
Case: PG-TDSON-8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Gate charge: 46nC
On-state resistance: 2.7mΩ
Power dissipation: 75W
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPN80R4K5P7ATMA1 IPN80R4K5P7.pdf
IPN80R4K5P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 6W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 4nC
On-state resistance: 4.5Ω
Drain current: 1A
Power dissipation: 6W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
auf Bestellung 2055 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
75+0.96 EUR
93+0.77 EUR
106+0.68 EUR
135+0.53 EUR
Mindestbestellmenge: 75
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IPN80R1K4P7ATMA1 IPN80R1K4P7.pdf
IPN80R1K4P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 7W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 10nC
On-state resistance: 1.4Ω
Drain current: 2.7A
Power dissipation: 7W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPN80R1K2P7ATMA1 IPN80R1K2P7.pdf
IPN80R1K2P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 6.8W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 11nC
On-state resistance: 1.2Ω
Drain current: 3.1A
Power dissipation: 6.8W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPN80R750P7ATMA1 IPN80R750P7.pdf
IPN80R750P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 7.2W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 17nC
On-state resistance: 0.75Ω
Drain current: 4.6A
Power dissipation: 7.2W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPN80R2K4P7ATMA1 IPN80R2K4P7.pdf
IPN80R2K4P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.7A; 6.3W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 8nC
On-state resistance: 2.4Ω
Drain current: 1.7A
Power dissipation: 6.3W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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