Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (118571) > Seite 1956 nach 1977
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IRFP7430PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 404A; 366W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 404A Power dissipation: 366W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 1.3mΩ Mounting: THT Gate charge: 300nC Kind of package: tube Kind of channel: enhancement Trade name: StrongIRFET Technology: HEXFET® |
auf Bestellung 443 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRFS7434TRL7PP | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 229A; Idm: 1.3kA; 245W; D2PAK-7 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 229A Power dissipation: 245W Case: D2PAK-7 On-state resistance: 1mΩ Mounting: SMD Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 1.3kA |
Produkt ist nicht verfügbar |
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| IRFS7434TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 320A; 294W; D2PAK,TO263AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 320A Power dissipation: 294W Case: D2PAK; TO263AB On-state resistance: 1.6mΩ Mounting: SMD Gate charge: 216nC Kind of channel: enhancement Technology: HEXFET® |
Produkt ist nicht verfügbar |
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IRFS7530TRL7PP | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 240A; 375W; D2PAK-7 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 240A Power dissipation: 375W Case: D2PAK-7 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Gate charge: 236nC Kind of channel: enhancement Trade name: StrongIRFET |
auf Bestellung 365 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFS7530TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 295A; 375W; D2PAK; StrongIRFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 295A Power dissipation: 375W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: SMD Gate charge: 274nC Kind of channel: enhancement Trade name: StrongIRFET |
Produkt ist nicht verfügbar |
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BSS139H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 0.1A; 0.36W; SOT23 Case: SOT23 Mounting: SMD Type of transistor: N-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain current: 0.1A Power dissipation: 0.36W On-state resistance: 30Ω Gate-source voltage: ±20V Drain-source voltage: 250V Kind of channel: depletion |
auf Bestellung 5212 Stücke: Lieferzeit 14-21 Tag (e) |
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BSZ520N15NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 21A; 57W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 150V Drain current: 21A Power dissipation: 57W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 52mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| IPD30N06S4L23ATMA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 30A; 36W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 30A Power dissipation: 36W Case: DPAK; TO252 On-state resistance: 23mΩ Mounting: SMD Gate charge: 21nC Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
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BSC059N04LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 62A; 50W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 62A Power dissipation: 50W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 5.9mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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AUIRF1324STRL | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 24V; 340A; 300W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 24V Drain current: 340A Power dissipation: 300W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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BSZ240N12NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 120V; 37A; 66W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 120V Drain current: 37A Power dissipation: 66W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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IPA60R190C6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20.2A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7313TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30V; 6.5A; 2W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 6.5A Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement Power dissipation: 2W Technology: HEXFET® |
auf Bestellung 3436 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF7313TRPBFXTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 6.5A; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 6.5A Case: SO8 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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XMC4502F100F768ACXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH Interface: CAN x3; GPIO; I2C; I2S; LIN; SPI; UART; USB Integrated circuit features: clock gaiting; DSP; RTC; watchdog Kind of architecture: Cortex M4 Case: PG-LQFP-100 Family: XMC4500 Operating temperature: -40...85°C Supply voltage: 3.3V DC Number of A/D channels: 18 Number of 16bit timers: 26 Number of inputs/outputs: 55 Memory: 160kB SRAM; 768kB FLASH Kind of core: 32-bit Type of integrated circuit: ARM microcontroller |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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XMC4502F100K768ACXQMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH Interface: CAN x3; GPIO; I2C; I2S; LIN; SPI; UART; USB Integrated circuit features: clock gaiting; DSP; RTC; watchdog Kind of architecture: Cortex M4 Case: PG-LQFP-100 Family: XMC4500 Operating temperature: -40...125°C Supply voltage: 3.3V DC Number of A/D channels: 18 Number of 16bit timers: 26 Number of inputs/outputs: 55 Memory: 160kB SRAM; 768kB FLASH Kind of core: 32-bit Type of integrated circuit: ARM microcontroller |
Produkt ist nicht verfügbar |
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BSC010NE2LSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 25V; 39A; 96W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 25V Drain current: 39A Power dissipation: 96W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CY7C65213A-28PVXIT | INFINEON TECHNOLOGIES |
Category: USB interfaces - integrated circuitsDescription: IC: interface; GPIO x8,UART; USB controller; Full Speed; SSOP28 Type of integrated circuit: interface Kind of integrated circuit: USB controller Mounting: SMD Case: SSOP28 Kind of package: reel; tape Supply voltage: 1.71...5.5V DC Operating temperature: -40...85°C Data transfer rate: 12Mbps Integrated circuit features: bridge USB speed: Full Speed Interface: GPIO x8; UART |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| CY7C65213A-32LTXIT | INFINEON TECHNOLOGIES |
Category: USB interfaces - integrated circuitsDescription: IC: interface; GPIO x8,UART; USB controller; Full Speed; QFN32 Type of integrated circuit: interface Kind of integrated circuit: USB controller Mounting: SMD Case: QFN32 Kind of package: reel; tape Supply voltage: 1.71...5.5V DC Operating temperature: -40...85°C Data transfer rate: 12Mbps Integrated circuit features: bridge USB speed: Full Speed Interface: GPIO x8; UART |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| S25FL064LABMFA010 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 64Mb FLASH Interface: QUAD SPI Operating frequency: 108MHz Operating voltage: 2.7...3.6V Case: SOIC8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Application: automotive |
Produkt ist nicht verfügbar |
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| S25FL064LABMFA011 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 64Mb FLASH Interface: QUAD SPI Operating frequency: 108MHz Operating voltage: 2.7...3.6V Case: SOIC8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: tube Application: automotive |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| S25FL064LABMFA013 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 64Mb FLASH Interface: QUAD SPI Operating frequency: 108MHz Operating voltage: 2.7...3.6V Case: SOIC8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Application: automotive |
Produkt ist nicht verfügbar |
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| S25FL128LAGMFA010 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 128Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: SOIC8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Application: automotive |
Produkt ist nicht verfügbar |
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| S25FL512SAGMFA010 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 512Mb FLASH Interface: QUAD SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: SOIC16 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Application: automotive |
Produkt ist nicht verfügbar |
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| S70FL01GSAGMFA010 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; SOIC16 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 1Gb FLASH Interface: CFI; SPI Operating frequency: 133MHz Operating voltage: 2.7...3.6V Case: SOIC16 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray Application: automotive |
Produkt ist nicht verfügbar |
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IPP220N25NFDAKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 61A; 300W; PG-TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 61A Power dissipation: 300W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: OptiMOS™ FD |
Produkt ist nicht verfügbar |
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| IKD10N60RC2ATMA1 | INFINEON TECHNOLOGIES |
Category: IGBT modulesDescription: Transistor: IGBT; Field Stop; 600V; 18.8A; 79W; DPAK Type of transistor: IGBT Technology: Field Stop; Trench Power dissipation: 79W Case: DPAK Mounting: SMD Gate-emitter voltage: ±20V Pulsed collector current: 30A Collector-emitter voltage: 600V Gate charge: 48nC Turn-off time: 250ns Collector current: 18.8A |
Produkt ist nicht verfügbar |
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IRF8736TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 18A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 18A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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ICE2QR2280ZXKLA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller; 39÷65kHz; Ch: 1; DIP7; flyback; Ubr: 800V Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Frequency: 39...65kHz Number of channels: 1 Case: DIP7 Mounting: THT Operating temperature: -25...130°C Topology: flyback Input voltage: 85...265V Breakdown voltage: 800V Application: SMPS Operating voltage: 10.5...25V DC |
Produkt ist nicht verfügbar |
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BSD840NH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 20V; 0.88A; 0.5W; SOT363 Type of transistor: N-MOSFET x2 Technology: OptiMOS™ 2 Mounting: SMD Case: SOT363 Polarisation: unipolar On-state resistance: 0.4Ω Power dissipation: 0.5W Drain current: 0.88A Gate-source voltage: ±8V Drain-source voltage: 20V Kind of channel: enhancement |
auf Bestellung 1586 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS716GBXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 2.6÷5.3A; Ch: 4; N-Channel; SMD; SO20 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 2.6...5.3A Number of channels: 4 Kind of output: N-Channel Mounting: SMD Case: SO20 On-state resistance: 35mΩ Supply voltage: 5.5...40V DC Technology: Classic PROFET Power dissipation: 3.6W Turn-on time: 270µs Turn-off time: 0.25ms |
auf Bestellung 133 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPB330P10NMATMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar Type of transistor: P-MOSFET Polarisation: unipolar Mounting: SMD |
Produkt ist nicht verfügbar |
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| IPB19DP10NMATMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; D2PAK,TO263 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Case: D2PAK; TO263 On-state resistance: 0.149Ω Mounting: SMD Kind of channel: enhancement Gate charge: 45nC |
Produkt ist nicht verfügbar |
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| IPD11DP10NMATMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; 100V; -22A; 125W; DPAK,TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: -22A Power dissipation: 125W Case: DPAK; TO252 On-state resistance: 111mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 59nC |
Produkt ist nicht verfügbar |
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| S25FL064LABBHV020 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 64Mb FLASH Case: BGA24 Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Interface: QUAD SPI Kind of interface: serial Operating voltage: 2.7...3.6V Operating frequency: 108MHz |
Produkt ist nicht verfügbar |
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| S25FL128LAGBHV020 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 128Mb FLASH Case: BGA24 Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Interface: QUAD SPI Kind of interface: serial Operating voltage: 2.7...3.6V Operating frequency: 133MHz |
Produkt ist nicht verfügbar |
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| S25FL128LAGBHV023 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 128Mb FLASH Case: BGA24 Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Interface: QUAD SPI Kind of interface: serial Operating voltage: 2.7...3.6V Operating frequency: 133MHz |
Produkt ist nicht verfügbar |
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| S25FL256LAGBHV020 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Case: BGA24 Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Interface: QUAD SPI Kind of interface: serial Operating voltage: 2.7...3.6V Operating frequency: 133MHz |
Produkt ist nicht verfügbar |
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| S25FL256LAGBHV023 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Case: BGA24 Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Interface: QUAD SPI Kind of interface: serial Operating voltage: 2.7...3.6V Operating frequency: 133MHz |
Produkt ist nicht verfügbar |
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| S26KS128SDPBHV020 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 128MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 128Mb FLASH Case: FBGA24 Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Interface: HyperBus Kind of interface: serial Operating voltage: 1.7...1.95V Operating frequency: 166MHz |
Produkt ist nicht verfügbar |
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| S26KS256SDPBHV020 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Case: FBGA24 Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Interface: HyperBus Kind of interface: serial Operating voltage: 1.7...1.95V Operating frequency: 166MHz |
Produkt ist nicht verfügbar |
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| S26KS512SDPBHV020 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 512MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 512Mb FLASH Case: FBGA24 Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Interface: HyperBus Kind of interface: serial Operating voltage: 1.7...1.95V Operating frequency: 166MHz |
Produkt ist nicht verfügbar |
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| S27KL0642GABHV020 | INFINEON TECHNOLOGIES |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C; in-tray Type of integrated circuit: DRAM memory Kind of memory: DRAM Memory: 64Mb DRAM Clock frequency: 200MHz Access time: 35ns Case: FBGA24 Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Supply voltage: 2.7...3.6V DC Interface: HyperBus |
Produkt ist nicht verfügbar |
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| S27KL0643DPBHV023 | INFINEON TECHNOLOGIES |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 166MHz; 35ns; FBGA24; -40÷105°C Type of integrated circuit: DRAM memory Kind of memory: DRAM Memory: 64Mb DRAM Clock frequency: 166MHz Access time: 35ns Case: FBGA24 Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Supply voltage: 2.7...3.6V DC Interface: HyperBus |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| S27KS0642GABHV020 | INFINEON TECHNOLOGIES |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C; in-tray Type of integrated circuit: DRAM memory Kind of memory: DRAM Memory: 64Mb DRAM Clock frequency: 200MHz Access time: 35ns Case: FBGA24 Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Supply voltage: 1.7...2V DC Interface: HyperBus |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| S27KS0642GABHV023 | INFINEON TECHNOLOGIES |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C Type of integrated circuit: DRAM memory Kind of memory: DRAM Memory: 64Mb DRAM Clock frequency: 200MHz Access time: 35ns Case: FBGA24 Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Supply voltage: 1.7...2V DC Interface: HyperBus |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| S27KS0643GABHV020 | INFINEON TECHNOLOGIES |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C; in-tray Type of integrated circuit: DRAM memory Kind of memory: DRAM Memory: 64Mb DRAM Clock frequency: 200MHz Access time: 35ns Case: FBGA24 Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Supply voltage: 1.7...2V DC Interface: HyperBus |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| S29GL01GS11DHV020 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 1Gb FLASH Access time: 110ns Case: BGA64 Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Interface: CFI; parallel Kind of interface: parallel Operating voltage: 2.7...3.6V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| S29GL01GS11DHV023 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 1Gb FLASH Access time: 110ns Case: BGA64 Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Interface: CFI; parallel Kind of interface: parallel Operating voltage: 2.7...3.6V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| S29GL01GT11DHV023 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel Case: BGA64 Mounting: SMD Kind of package: reel; tape Kind of memory: NOR Kind of interface: parallel Operating temperature: -40...105°C Access time: 110ns Operating voltage: 2.7...3.6V Memory: 1Gb FLASH Interface: CFI; parallel Type of integrated circuit: FLASH memory |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| S29GL064S80DHV020 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 80ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 64Mb FLASH Access time: 80ns Case: BGA64 Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Interface: CFI; parallel Kind of interface: parallel Operating voltage: 2.7...3.6V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| S29GL064S80DHV023 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 80ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 64Mb FLASH Access time: 80ns Case: BGA64 Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Interface: CFI; parallel Kind of interface: parallel Operating voltage: 2.7...3.6V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| S29GL256S10DHV020 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Access time: 100ns Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| S29GL256S10DHV023 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Access time: 100ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| S29GL512T11DHV020 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 110ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 512Mb FLASH Access time: 110ns Case: BGA64 Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Interface: CFI; parallel Kind of interface: parallel Operating voltage: 2.7...3.6V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| S29GL512T11DHV023 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 110ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 512Mb FLASH Access time: 110ns Case: BGA64 Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Interface: CFI; parallel Kind of interface: parallel Operating voltage: 2.7...3.6V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| S70GL02GS11FHV020 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 2Gb FLASH Access time: 110ns Case: BGA64 Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Interface: CFI; parallel Kind of interface: parallel Operating voltage: 2.7...3.6V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| S70GL02GS11FHV023 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 2Gb FLASH Access time: 110ns Case: BGA64 Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Interface: CFI; parallel Kind of interface: parallel Operating voltage: 2.7...3.6V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| S70KL1282DPBHV020 | INFINEON TECHNOLOGIES |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷105°C Type of integrated circuit: DRAM memory Kind of memory: DRAM Memory: 128Mb DRAM Clock frequency: 166MHz Access time: 35ns Case: FBGA24 Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Supply voltage: 2.7...3.6V DC Interface: HyperBus |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| S70KL1282DPBHV023 | INFINEON TECHNOLOGIES |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷105°C Type of integrated circuit: DRAM memory Kind of memory: DRAM Memory: 128Mb DRAM Clock frequency: 166MHz Access time: 35ns Case: FBGA24 Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Supply voltage: 2.7...3.6V DC Interface: HyperBus |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRFP7430PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 404A; 366W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 404A
Power dissipation: 366W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 404A; 366W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 404A
Power dissipation: 366W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
Technology: HEXFET®
auf Bestellung 443 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 27+ | 2.67 EUR |
| 29+ | 2.52 EUR |
| 31+ | 2.33 EUR |
| 50+ | 2.16 EUR |
| 100+ | 2.03 EUR |
| 250+ | 1.87 EUR |
| IRFS7434TRL7PP |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 229A; Idm: 1.3kA; 245W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 229A
Power dissipation: 245W
Case: D2PAK-7
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1.3kA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 229A; Idm: 1.3kA; 245W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 229A
Power dissipation: 245W
Case: D2PAK-7
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1.3kA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFS7434TRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 320A; 294W; D2PAK,TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 320A
Power dissipation: 294W
Case: D2PAK; TO263AB
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 216nC
Kind of channel: enhancement
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 320A; 294W; D2PAK,TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 320A
Power dissipation: 294W
Case: D2PAK; TO263AB
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 216nC
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFS7530TRL7PP |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 240A; 375W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 240A
Power dissipation: 375W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 236nC
Kind of channel: enhancement
Trade name: StrongIRFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 240A; 375W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 240A
Power dissipation: 375W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 236nC
Kind of channel: enhancement
Trade name: StrongIRFET
auf Bestellung 365 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.56 EUR |
| 24+ | 3.07 EUR |
| 27+ | 2.7 EUR |
| 100+ | 2.25 EUR |
| IRFS7530TRLPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 295A; 375W; D2PAK; StrongIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 295A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 274nC
Kind of channel: enhancement
Trade name: StrongIRFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 295A; 375W; D2PAK; StrongIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 295A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 274nC
Kind of channel: enhancement
Trade name: StrongIRFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSS139H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.1A; 0.36W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain current: 0.1A
Power dissipation: 0.36W
On-state resistance: 30Ω
Gate-source voltage: ±20V
Drain-source voltage: 250V
Kind of channel: depletion
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.1A; 0.36W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain current: 0.1A
Power dissipation: 0.36W
On-state resistance: 30Ω
Gate-source voltage: ±20V
Drain-source voltage: 250V
Kind of channel: depletion
auf Bestellung 5212 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 129+ | 0.56 EUR |
| 180+ | 0.4 EUR |
| 278+ | 0.26 EUR |
| 323+ | 0.22 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.17 EUR |
| BSZ520N15NS3GATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 57W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 21A
Power dissipation: 57W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 57W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 21A
Power dissipation: 57W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPD30N06S4L23ATMA2 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; 36W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Power dissipation: 36W
Case: DPAK; TO252
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 21nC
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; 36W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Power dissipation: 36W
Case: DPAK; TO252
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 21nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSC059N04LSGATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 62A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 62A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 62A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 62A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AUIRF1324STRL |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 340A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 24V
Drain current: 340A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 24V; 340A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 24V
Drain current: 340A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSZ240N12NS3GATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 37A; 66W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 37A
Power dissipation: 66W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 37A; 66W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 37A
Power dissipation: 66W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPA60R190C6XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 32+ | 2.29 EUR |
| 35+ | 2.06 EUR |
| 50+ | 1.94 EUR |
| IRF7313TRPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 6.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.5A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 2W
Technology: HEXFET®
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 6.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.5A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 2W
Technology: HEXFET®
auf Bestellung 3436 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 65+ | 1.1 EUR |
| 96+ | 0.75 EUR |
| 139+ | 0.51 EUR |
| IRF7313TRPBFXTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.5A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.5A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.5A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.5A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| XMC4502F100F768ACXQMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Interface: CAN x3; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Case: PG-LQFP-100
Family: XMC4500
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Memory: 160kB SRAM; 768kB FLASH
Kind of core: 32-bit
Type of integrated circuit: ARM microcontroller
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Interface: CAN x3; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Case: PG-LQFP-100
Family: XMC4500
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Memory: 160kB SRAM; 768kB FLASH
Kind of core: 32-bit
Type of integrated circuit: ARM microcontroller
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| XMC4502F100K768ACXQMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Interface: CAN x3; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Case: PG-LQFP-100
Family: XMC4500
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Memory: 160kB SRAM; 768kB FLASH
Kind of core: 32-bit
Type of integrated circuit: ARM microcontroller
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Interface: CAN x3; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Case: PG-LQFP-100
Family: XMC4500
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Memory: 160kB SRAM; 768kB FLASH
Kind of core: 32-bit
Type of integrated circuit: ARM microcontroller
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| BSC010NE2LSATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 39A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 39A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 39A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 39A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
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Im Einkaufswagen
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| CY7C65213A-28PVXIT |
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Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: interface; GPIO x8,UART; USB controller; Full Speed; SSOP28
Type of integrated circuit: interface
Kind of integrated circuit: USB controller
Mounting: SMD
Case: SSOP28
Kind of package: reel; tape
Supply voltage: 1.71...5.5V DC
Operating temperature: -40...85°C
Data transfer rate: 12Mbps
Integrated circuit features: bridge
USB speed: Full Speed
Interface: GPIO x8; UART
Category: USB interfaces - integrated circuits
Description: IC: interface; GPIO x8,UART; USB controller; Full Speed; SSOP28
Type of integrated circuit: interface
Kind of integrated circuit: USB controller
Mounting: SMD
Case: SSOP28
Kind of package: reel; tape
Supply voltage: 1.71...5.5V DC
Operating temperature: -40...85°C
Data transfer rate: 12Mbps
Integrated circuit features: bridge
USB speed: Full Speed
Interface: GPIO x8; UART
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| CY7C65213A-32LTXIT |
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Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: interface; GPIO x8,UART; USB controller; Full Speed; QFN32
Type of integrated circuit: interface
Kind of integrated circuit: USB controller
Mounting: SMD
Case: QFN32
Kind of package: reel; tape
Supply voltage: 1.71...5.5V DC
Operating temperature: -40...85°C
Data transfer rate: 12Mbps
Integrated circuit features: bridge
USB speed: Full Speed
Interface: GPIO x8; UART
Category: USB interfaces - integrated circuits
Description: IC: interface; GPIO x8,UART; USB controller; Full Speed; QFN32
Type of integrated circuit: interface
Kind of integrated circuit: USB controller
Mounting: SMD
Case: QFN32
Kind of package: reel; tape
Supply voltage: 1.71...5.5V DC
Operating temperature: -40...85°C
Data transfer rate: 12Mbps
Integrated circuit features: bridge
USB speed: Full Speed
Interface: GPIO x8; UART
Produkt ist nicht verfügbar
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| S25FL064LABMFA010 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
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| S25FL064LABMFA011 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
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| S25FL064LABMFA013 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
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| S25FL128LAGMFA010 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
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| S25FL512SAGMFA010 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
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| S70FL01GSAGMFA010 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IPP220N25NFDAKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 61A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 61A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ FD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 61A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 61A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ FD
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IKD10N60RC2ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Transistor: IGBT; Field Stop; 600V; 18.8A; 79W; DPAK
Type of transistor: IGBT
Technology: Field Stop; Trench
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Gate charge: 48nC
Turn-off time: 250ns
Collector current: 18.8A
Category: IGBT modules
Description: Transistor: IGBT; Field Stop; 600V; 18.8A; 79W; DPAK
Type of transistor: IGBT
Technology: Field Stop; Trench
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Collector-emitter voltage: 600V
Gate charge: 48nC
Turn-off time: 250ns
Collector current: 18.8A
Produkt ist nicht verfügbar
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| IRF8736TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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| ICE2QR2280ZXKLA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 39÷65kHz; Ch: 1; DIP7; flyback; Ubr: 800V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 39...65kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 85...265V
Breakdown voltage: 800V
Application: SMPS
Operating voltage: 10.5...25V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 39÷65kHz; Ch: 1; DIP7; flyback; Ubr: 800V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 39...65kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 85...265V
Breakdown voltage: 800V
Application: SMPS
Operating voltage: 10.5...25V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
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| BSD840NH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.88A; 0.5W; SOT363
Type of transistor: N-MOSFET x2
Technology: OptiMOS™ 2
Mounting: SMD
Case: SOT363
Polarisation: unipolar
On-state resistance: 0.4Ω
Power dissipation: 0.5W
Drain current: 0.88A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.88A; 0.5W; SOT363
Type of transistor: N-MOSFET x2
Technology: OptiMOS™ 2
Mounting: SMD
Case: SOT363
Polarisation: unipolar
On-state resistance: 0.4Ω
Power dissipation: 0.5W
Drain current: 0.88A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of channel: enhancement
auf Bestellung 1586 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 173+ | 0.41 EUR |
| 258+ | 0.28 EUR |
| 382+ | 0.19 EUR |
| 451+ | 0.16 EUR |
| 550+ | 0.13 EUR |
| 642+ | 0.11 EUR |
| 1000+ | 0.099 EUR |
| BTS716GBXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.6÷5.3A; Ch: 4; N-Channel; SMD; SO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.6...5.3A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: SO20
On-state resistance: 35mΩ
Supply voltage: 5.5...40V DC
Technology: Classic PROFET
Power dissipation: 3.6W
Turn-on time: 270µs
Turn-off time: 0.25ms
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.6÷5.3A; Ch: 4; N-Channel; SMD; SO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.6...5.3A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: SO20
On-state resistance: 35mΩ
Supply voltage: 5.5...40V DC
Technology: Classic PROFET
Power dissipation: 3.6W
Turn-on time: 270µs
Turn-off time: 0.25ms
auf Bestellung 133 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 4.89 EUR |
| 19+ | 3.86 EUR |
| 25+ | 3.7 EUR |
| IPB330P10NMATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar
Type of transistor: P-MOSFET
Polarisation: unipolar
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar
Type of transistor: P-MOSFET
Polarisation: unipolar
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IPB19DP10NMATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Case: D2PAK; TO263
On-state resistance: 0.149Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 45nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Case: D2PAK; TO263
On-state resistance: 0.149Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 45nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPD11DP10NMATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 100V; -22A; 125W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: -22A
Power dissipation: 125W
Case: DPAK; TO252
On-state resistance: 111mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 59nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 100V; -22A; 125W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: -22A
Power dissipation: 125W
Case: DPAK; TO252
On-state resistance: 111mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 59nC
Produkt ist nicht verfügbar
Im Einkaufswagen
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| S25FL064LABBHV020 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Interface: QUAD SPI
Kind of interface: serial
Operating voltage: 2.7...3.6V
Operating frequency: 108MHz
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Interface: QUAD SPI
Kind of interface: serial
Operating voltage: 2.7...3.6V
Operating frequency: 108MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S25FL128LAGBHV020 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Interface: QUAD SPI
Kind of interface: serial
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Interface: QUAD SPI
Kind of interface: serial
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S25FL128LAGBHV023 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Interface: QUAD SPI
Kind of interface: serial
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Interface: QUAD SPI
Kind of interface: serial
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S25FL256LAGBHV020 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Interface: QUAD SPI
Kind of interface: serial
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Interface: QUAD SPI
Kind of interface: serial
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S25FL256LAGBHV023 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Interface: QUAD SPI
Kind of interface: serial
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Case: BGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Interface: QUAD SPI
Kind of interface: serial
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Produkt ist nicht verfügbar
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| S26KS128SDPBHV020 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Interface: HyperBus
Kind of interface: serial
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Interface: HyperBus
Kind of interface: serial
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S26KS256SDPBHV020 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Interface: HyperBus
Kind of interface: serial
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Interface: HyperBus
Kind of interface: serial
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S26KS512SDPBHV020 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Interface: HyperBus
Kind of interface: serial
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Interface: HyperBus
Kind of interface: serial
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
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| S27KL0642GABHV020 |
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Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S27KL0643DPBHV023 |
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Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 166MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 166MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S27KS0642GABHV020 |
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Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S27KS0642GABHV023 |
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Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S27KS0643GABHV020 |
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Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S29GL01GS11DHV020 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Access time: 110ns
Case: BGA64
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Interface: CFI; parallel
Kind of interface: parallel
Operating voltage: 2.7...3.6V
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Access time: 110ns
Case: BGA64
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Interface: CFI; parallel
Kind of interface: parallel
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S29GL01GS11DHV023 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Access time: 110ns
Case: BGA64
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Interface: CFI; parallel
Kind of interface: parallel
Operating voltage: 2.7...3.6V
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Access time: 110ns
Case: BGA64
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Interface: CFI; parallel
Kind of interface: parallel
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S29GL01GT11DHV023 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Operating temperature: -40...105°C
Access time: 110ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Operating temperature: -40...105°C
Access time: 110ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S29GL064S80DHV020 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 80ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Access time: 80ns
Case: BGA64
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Interface: CFI; parallel
Kind of interface: parallel
Operating voltage: 2.7...3.6V
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 80ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Access time: 80ns
Case: BGA64
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Interface: CFI; parallel
Kind of interface: parallel
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S29GL064S80DHV023 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 80ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Access time: 80ns
Case: BGA64
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Interface: CFI; parallel
Kind of interface: parallel
Operating voltage: 2.7...3.6V
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 80ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Access time: 80ns
Case: BGA64
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Interface: CFI; parallel
Kind of interface: parallel
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S29GL256S10DHV020 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Access time: 100ns
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Access time: 100ns
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S29GL256S10DHV023 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Access time: 100ns
Kind of package: reel; tape
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Access time: 100ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S29GL512T11DHV020 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Access time: 110ns
Case: BGA64
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Interface: CFI; parallel
Kind of interface: parallel
Operating voltage: 2.7...3.6V
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Access time: 110ns
Case: BGA64
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Interface: CFI; parallel
Kind of interface: parallel
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S29GL512T11DHV023 |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Access time: 110ns
Case: BGA64
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Interface: CFI; parallel
Kind of interface: parallel
Operating voltage: 2.7...3.6V
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Access time: 110ns
Case: BGA64
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Interface: CFI; parallel
Kind of interface: parallel
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S70GL02GS11FHV020 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 2Gb FLASH
Access time: 110ns
Case: BGA64
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Interface: CFI; parallel
Kind of interface: parallel
Operating voltage: 2.7...3.6V
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 2Gb FLASH
Access time: 110ns
Case: BGA64
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Interface: CFI; parallel
Kind of interface: parallel
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S70GL02GS11FHV023 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 2Gb FLASH
Access time: 110ns
Case: BGA64
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Interface: CFI; parallel
Kind of interface: parallel
Operating voltage: 2.7...3.6V
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 2Gb FLASH
Access time: 110ns
Case: BGA64
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Interface: CFI; parallel
Kind of interface: parallel
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S70KL1282DPBHV020 |
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Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S70KL1282DPBHV023 |
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Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH














