IKW40N120H3FKSA1 Infineon Technologies
auf Bestellung 2300 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 16.57 EUR |
| 11+ | 14.27 EUR |
| 50+ | 11.88 EUR |
| 100+ | 10.81 EUR |
| 200+ | 9.95 EUR |
| 960+ | 9.49 EUR |
| 1920+ | 8.01 EUR |
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Technische Details IKW40N120H3FKSA1 Infineon Technologies
Description: IGBT TRENCH FS 1200V 80A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 355 ns, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A, Supplier Device Package: PG-TO247-3-1, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 30ns/290ns, Switching Energy: 4.4mJ, Test Condition: 600V, 40A, 12Ohm, 15V, Gate Charge: 185 nC, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 483 W.
Weitere Produktangebote IKW40N120H3FKSA1 nach Preis ab 10.19 EUR bis 19.19 EUR
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IKW40N120H3FKSA1 | Hersteller : Infineon Technologies |
 IGBT Transistors IGBT PRODUCTS |
auf Bestellung 478 Stücke: Lieferzeit 14-28 Tag (e) |
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IKW40N120H3FKSA1 | Hersteller : Infineon Technologies |
Description: IGBT TRENCH FS 1200V 80A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 355 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Supplier Device Package: PG-TO247-3-1 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 30ns/290ns Switching Energy: 4.4mJ Test Condition: 600V, 40A, 12Ohm, 15V Gate Charge: 185 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 483 W |
auf Bestellung 6522 Stücke: Lieferzeit 21-28 Tag (e) |
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IKW40N120H3FKSA1 | Hersteller : INFINEON |
Description: INFINEON - IKW40N120H3FKSA1 - IGBT, 40 A, 2.4 V, 483 W, 1.2 kV, TO-247, 3 Pin(s) tariffCode: 85412900 productTraceability: Yes-Date/Lot Code Kollektor-Emitter-Spannung, max.: 1.2kV rohsCompliant: YES Verlustleistung: 483W Anzahl der Pins: 3Pins euEccn: NLR Kontinuierlicher Kollektorstrom: 40A hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 2.4V Betriebstemperatur, max.: 175°C usEccn: EAR99 Produktpalette: - |
auf Bestellung 13950 Stücke: Lieferzeit 14-21 Tag (e) |
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IKW40N120H3FKSA1 Produktcode: 144428 |
Transistoren > Transistoren IGBT, Leistungsmodule |
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IKW40N120H3FKSA1 | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 1200V 80A 483000mW Automotive 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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IKW40N120H3FKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 80A; 483W; TO247-3; H3 Type of transistor: IGBT Technology: TRENCHSTOP™ 3 Collector-emitter voltage: 1.2kV Collector current: 80A Power dissipation: 483W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 185nC Kind of package: tube Manufacturer series: H3 Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IKW40N120H3FKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 80A; 483W; TO247-3; H3 Type of transistor: IGBT Technology: TRENCHSTOP™ 3 Collector-emitter voltage: 1.2kV Collector current: 80A Power dissipation: 483W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 185nC Kind of package: tube Manufacturer series: H3 Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |