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SPA11N80C3XKSA2 INFINEON TECHNOLOGIES SPP_A11N80C3_Rev[1].2.6.pdf?folderId=db3a3043163797a6011638491238009b&fileId=db3a3043163797a60116385b2fcc00ec Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 34W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 34W
Case: TO220-3
On-state resistance: 0.45Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 85nC
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IRLMS6802TRPBF IRLMS6802TRPBF INFINEON TECHNOLOGIES irlms6802pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.6A; 2W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.6A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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BC857CWH6327XTSA1 INFINEON TECHNOLOGIES Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar
Type of transistor: PNP
Polarisation: bipolar
Mounting: SMD
Produkt ist nicht verfügbar
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BC857CE6433HTMA1 INFINEON TECHNOLOGIES Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar
Type of transistor: PNP
Polarisation: bipolar
Mounting: SMD
Produkt ist nicht verfügbar
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IPD047N03LF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPD047N03LF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192b89c5f296484 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 71A; 65W; DPAK,TO252
Polarisation: unipolar
On-state resistance: 4.7mΩ
Drain-source voltage: 30V
Drain current: 71A
Power dissipation: 65W
Case: DPAK; TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Produkt ist nicht verfügbar
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IGW30N60TPXKSA1 IGW30N60TPXKSA1 INFINEON TECHNOLOGIES IGW30N60TP.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 38A; 100W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 38A
Gate-emitter voltage: ±20V
Power dissipation: 100W
Pulsed collector current: 90A
Collector-emitter voltage: 600V
Technology: TRENCHSTOP™
Turn-on time: 38ns
Gate charge: 130nC
Turn-off time: 279ns
Produkt ist nicht verfügbar
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IRLML2246TRPBF IRLML2246TRPBF INFINEON TECHNOLOGIES irlml2246pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.6A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.6A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Kind of package: reel
auf Bestellung 5100 Stücke:
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272+0.26 EUR
394+0.18 EUR
550+0.13 EUR
625+0.11 EUR
695+0.1 EUR
1000+0.093 EUR
1300+0.09 EUR
3000+0.08 EUR
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IPA80R900P7XKSA1 IPA80R900P7XKSA1 INFINEON TECHNOLOGIES IPA80R900P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 27W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.6A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 25 Stücke:
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25+2.86 EUR
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IPN80R900P7ATMA1 IPN80R900P7ATMA1 INFINEON TECHNOLOGIES IPN80R900P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 7W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 7W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel
Kind of channel: enhancement
Version: ESD
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IRFP9140NPBF IRFP9140NPBF INFINEON TECHNOLOGIES irfp9140n.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -21A; 120W; TO247AC
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -21A
Power dissipation: 120W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.117Ω
Mounting: THT
Gate charge: 64.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 311 Stücke:
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26+2.79 EUR
39+1.87 EUR
44+1.63 EUR
50+1.49 EUR
100+1.34 EUR
250+1.19 EUR
Mindestbestellmenge: 26
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IRF3007STRLPBF INFINEON TECHNOLOGIES irf3007spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 62A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 62A
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
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IRF3415STRLPBF IRF3415STRLPBF INFINEON TECHNOLOGIES irf3415spbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Power dissipation: 200W
Case: TO262
Mounting: THT
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
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IRFR9120NTRPBF IRFR9120NTRPBF INFINEON TECHNOLOGIES irfr9120npbf.pdf description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -6.5A; 39W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -6.5A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 934 Stücke:
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46+1.56 EUR
71+1.01 EUR
108+0.67 EUR
200+0.59 EUR
500+0.52 EUR
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S25FL128LAGMFM010 S25FL128LAGMFM010 INFINEON TECHNOLOGIES S25FL.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; SPI; 133MHz; 2.7÷3.6V; SO8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: SPI
Kind of interface: serial
Mounting: SMD
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Case: SO8
Operating temperature: -40...125°C
auf Bestellung 73 Stücke:
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22+3.32 EUR
24+3.09 EUR
25+2.9 EUR
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BSC059N04LS6ATMA1 BSC059N04LS6ATMA1 INFINEON TECHNOLOGIES BSC059N04LS6ATMA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 38W
Case: PG-TDSON-8 FL
On-state resistance: 5.9mΩ
Mounting: SMD
Gate charge: 9.4nC
Kind of channel: enhancement
Technology: OptiMOS™ 6
Kind of package: reel; tape
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IRF9310TRPBF IRF9310TRPBF INFINEON TECHNOLOGIES irf9310pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -20A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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BSS159NH6906XTSA1 INFINEON TECHNOLOGIES Infineon-BSS159N-DS-v02_02-en.pdf?fileId=db3a304330f68606013108d8b2230036 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 230mA; 360mW; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.23A
Power dissipation: 0.36W
Case: SOT23
On-state resistance: 1.7Ω
Mounting: SMD
Application: automotive industry
Produkt ist nicht verfügbar
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CY8CKIT-143A
+1
 		CY8CKIT-143A INFINEON TECHNOLOGIES download Category: Development kits - others
Description: Dev.kit: Cypress; Bluetooth: 4.0 EDR
Type of development kit: Cypress
Bluetooth version: 4.0 EDR
auf Bestellung 10 Stücke:
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5+17.22 EUR
Mindestbestellmenge: 5
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CY8CKIT-042-BLE-A
+1
 		CY8CKIT-042-BLE-A INFINEON TECHNOLOGIES Infineon-CY8CKIT-042-BLE-A_Bluetooth_Low_Energy_Pioneer_Kit_Release_Notes-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0efc91fe12bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Development kits - others
Description: Dev.kit: Cypress; evaluation board; Bluetooth: 4.2,BLE
Type of development kit: Cypress
Connection: USB B mini
Kind of module: evaluation board
Bluetooth version: 4.2; BLE
Produkt ist nicht verfügbar
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CY8CKIT-005 CY8CKIT-005 INFINEON TECHNOLOGIES Infineon-CY8CKIT-005_MiniProg4_Quick_Start_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0f0123eb1859&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Development kits - others
Description: Dev.kit: Cypress
Type of development kit: Cypress
Connection: USB C
Interface: JTAG; SWD
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CY8CKIT-002 INFINEON TECHNOLOGIES download Category: Development kits - others
Description: Dev.kit: Cypress
Type of development kit: Cypress
Connection: USB B mini
Interface: I2C; JTAG; SWD
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CY8CKIT-059
+1
 		CY8CKIT-059 INFINEON TECHNOLOGIES CY8CKIT_059.pdf Category: Development kits - others
Description: Dev.kit: Cypress; prototype board; Comp: CY8C5888LTI-LP097
Type of development kit: Cypress
Connection: USB B micro
Components: CY8C5888LTI-LP097
Interface: JTAG; SWD; USB
Kind of architecture: ARM; Cortex M3
Programmers and development kits features: integrated programmer/debugger; microcontroller I/O lines lead to goldpin connectors
Kit contents: prototype board
Produkt ist nicht verfügbar
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CY8CKIT-145-40xx CY8CKIT-145-40xx INFINEON TECHNOLOGIES Infineon-CY8CKIT-145-40XX_PSoC_4000S_Prototyping_Kit_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0efccdd91344&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Development kits - others
Description: Dev.kit: Cypress; prototype board
Type of development kit: Cypress
Connection: USB
Kind of module: prototype board
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CY8CKIT-062S2-43012 INFINEON TECHNOLOGIES Infineon-CY8CKIT-062S2-43012_PSoC_62S2_Wi-Fi_BT_Pioneer_Kit_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0f01c8f11927&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Development kits - Unclassified
Description: CY8CKIT-062S2-43012
auf Bestellung 39 Stücke:
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3+215.33 EUR
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BSC080N03MSGATMA1 BSC080N03MSGATMA1 INFINEON TECHNOLOGIES BSC080N03MSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 53A; 35W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 53A
Power dissipation: 35W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 264 Stücke:
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107+0.67 EUR
144+0.5 EUR
155+0.46 EUR
250+0.44 EUR
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IR2102SPBF IR2102SPBF INFINEON TECHNOLOGIES ir2101_2102.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 160ns
Turn-off time: 150ns
Produkt ist nicht verfügbar
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IRFR15N20DTRPBF IRFR15N20DTRPBF INFINEON TECHNOLOGIES IRFR15N20DTRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 17A; 140W; DPAK
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain current: 17A
Power dissipation: 140W
Drain-source voltage: 200V
Kind of package: reel
Case: DPAK
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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BCX53H6327XTSA1 BCX53H6327XTSA1 INFINEON TECHNOLOGIES BCX53.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 2W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Frequency: 125MHz
auf Bestellung 1 Stücke:
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IRL2203NSTRLPBF IRL2203NSTRLPBF INFINEON TECHNOLOGIES irl2203nspbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 116A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 116A
Power dissipation: 170W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRLL2705TRPBF IRLL2705TRPBF INFINEON TECHNOLOGIES irll2705pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.8A; 2.1W; SOT223
Mounting: SMD
Case: SOT223
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Kind of package: reel
Polarisation: unipolar
Power dissipation: 2.1W
Drain current: 3.8A
Drain-source voltage: 55V
auf Bestellung 5378 Stücke:
Lieferzeit 14-21 Tag (e)
72+1 EUR
114+0.63 EUR
153+0.47 EUR
174+0.41 EUR
200+0.36 EUR
500+0.31 EUR
1000+0.3 EUR
2500+0.28 EUR
Mindestbestellmenge: 72
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IRLL2703TRPBF IRLL2703TRPBF INFINEON TECHNOLOGIES IRSDS06555-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 16A; 1W; SOT223
Case: SOT223
Mounting: SMD
Power dissipation: 1W
Gate-source voltage: ±16V
Pulsed drain current: 16A
Drain-source voltage: 30V
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 45mΩ
Drain current: 3.1A
Produkt ist nicht verfügbar
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IRLML2803TRPBF IRLML2803TRPBF INFINEON TECHNOLOGIES irlml2803.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.2A; 0.4W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.2A
Power dissipation: 0.4W
Case: SOT23
On-state resistance: 0.3Ω
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 16509 Stücke:
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179+0.4 EUR
247+0.29 EUR
358+0.2 EUR
421+0.17 EUR
521+0.14 EUR
603+0.12 EUR
1000+0.1 EUR
3000+0.086 EUR
6000+0.079 EUR
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IRLML5103TRPBF IRLML5103TRPBF INFINEON TECHNOLOGIES irlml5103pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.61A; 0.54W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.61A
Power dissipation: 0.54W
Case: SOT23
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 4081 Stücke:
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157+0.46 EUR
220+0.33 EUR
385+0.19 EUR
550+0.13 EUR
1000+0.11 EUR
3000+0.096 EUR
Mindestbestellmenge: 157
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IRLML6346TRPBF IRLML6346TRPBF INFINEON TECHNOLOGIES irlml6346pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; Idm: 17A; 0.8W; SOT23
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Case: SOT23
Polarisation: unipolar
Gate charge: 2.9nC
On-state resistance: 80mΩ
Power dissipation: 0.8W
Drain current: 2.7A
Gate-source voltage: ±12V
Pulsed drain current: 17A
Drain-source voltage: 30V
auf Bestellung 1929 Stücke:
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162+0.44 EUR
224+0.32 EUR
327+0.22 EUR
388+0.18 EUR
550+0.13 EUR
1000+0.11 EUR
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IRLML6246TRPBF IRLML6246TRPBF INFINEON TECHNOLOGIES irlml6246pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.1A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 46mΩ
Mounting: SMD
Gate charge: 3.5nC
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 10780 Stücke:
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173+0.41 EUR
252+0.28 EUR
305+0.23 EUR
484+0.15 EUR
579+0.12 EUR
713+0.1 EUR
1000+0.088 EUR
3000+0.075 EUR
Mindestbestellmenge: 173
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IRF2805STRLPBF IRF2805STRLPBF INFINEON TECHNOLOGIES irf2805spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 135A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 135A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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BSB015N04NX3GXUMA1 BSB015N04NX3GXUMA1 INFINEON TECHNOLOGIES BSB015N04NX3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 89W
Case: CanPAK™ MX; MG-WDSON-2
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
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IPB015N04LGATMA1 IPB015N04LGATMA1 INFINEON TECHNOLOGIES IPB015N04LG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 260nC
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPB015N04NGATMA1 IPB015N04NGATMA1 INFINEON TECHNOLOGIES IPB015N04NG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IRF7317TRPBF IRF7317TRPBF INFINEON TECHNOLOGIES irf7317pbf.pdf description Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 6.6/-5.3A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 6.6/-5.3A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 29/58mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB031N08N5ATMA1 IPB031N08N5ATMA1 INFINEON TECHNOLOGIES IPB031N08N5-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 167W; PG-TO263-3
Case: PG-TO263-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 167W
Produkt ist nicht verfügbar
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BAS4002ARPPE6327HTSA1 BAS4002ARPPE6327HTSA1 INFINEON TECHNOLOGIES BAS4002ARPPE6327.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 40V; If: 0.2A; Ifsm: 2A; SOT143; SMT
Case: SOT143
Max. off-state voltage: 40V
Load current: 0.2A
Max. forward impulse current: 2A
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Features of semiconductor devices: Schottky
Electrical mounting: SMT
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BAS4004E6327HTSA1 BAS4004E6327HTSA1 INFINEON TECHNOLOGIES BAS4004E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; 250mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: double series
Max. forward voltage: 1V
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Produkt ist nicht verfügbar
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BAS4005E6327HTSA1 BAS4005E6327HTSA1 INFINEON TECHNOLOGIES BAS4004E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; 250mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: common cathode; double
Max. forward voltage: 1V
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
auf Bestellung 2296 Stücke:
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334+0.21 EUR
410+0.17 EUR
447+0.16 EUR
621+0.12 EUR
822+0.087 EUR
1000+0.076 EUR
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IRS20752LTRPBF IRS20752LTRPBF INFINEON TECHNOLOGIES IRS20752ltrpbf.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SOT23-6
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Mounting: SMD
Kind of package: reel; tape
Topology: single transistor
Case: SOT23-6
Operating temperature: -40...125°C
Output current: -240...160mA
Turn-on time: 225ns
Turn-off time: 255ns
Number of channels: 1
Supply voltage: 10...18V DC
Voltage class: 200V
auf Bestellung 2538 Stücke:
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84+0.86 EUR
100+0.72 EUR
111+0.65 EUR
120+0.6 EUR
125+0.58 EUR
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IRF7306TRPBF IRF7306TRPBF INFINEON TECHNOLOGIES irf7306pbf.pdf description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 2W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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50+1.44 EUR
68+1.07 EUR
96+0.75 EUR
112+0.64 EUR
500+0.48 EUR
1000+0.43 EUR
2000+0.4 EUR
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AUIRF7309QTR AUIRF7309QTR INFINEON TECHNOLOGIES auirf7309q.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4/-3A
Power dissipation: 1.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.05/0.1Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 16.7nC
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CY8C29466-24SXI CY8C29466-24SXI INFINEON TECHNOLOGIES CY8C29466-24PVXI.pdf description Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SO28; 2kBSRAM,32kBFLASH
Mounting: SMD
Operating temperature: -40...85°C
Case: SO28
Type of integrated circuit: PSoC microcontroller
Supply voltage: 3...5.25V DC
Number of inputs/outputs: 24
Memory: 2kB SRAM; 32kB FLASH
Clock frequency: 24MHz
Kind of core: 8-bit
Interface: I2C; SPI; UART
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3+25.8 EUR
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CY8C29666-24PVXI CY8C29666-24PVXI INFINEON TECHNOLOGIES CY8C29466-24PVXI.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP48; 3÷5.25VDC; Core: 8-bit
Type of integrated circuit: PSoC microcontroller
Clock frequency: 24MHz
Interface: GPIO; I2C; SPI; UART
Supply voltage: 3...5.25V DC
Case: SSOP48
Mounting: SMD
Memory: 2kB SRAM; 32kB FLASH; 512kB SRAM
Operating temperature: -40...85°C
Kind of core: 8-bit
Number of inputs/outputs: 44
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4+20.46 EUR
10+18.4 EUR
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CY8C22345-24PVXA CY8C22345-24PVXA INFINEON TECHNOLOGIES CY8C22345-24PVXA.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP28; 1kBSRAM,16kBFLASH
Type of integrated circuit: PSoC microcontroller
Clock frequency: 24MHz
Interface: I2C; SPI; UART
Supply voltage: 3...5.25V DC
Case: SSOP28
Mounting: SMD
Memory: 1kB SRAM; 16kB FLASH
Integrated circuit features: CapSense
Kind of core: 8-bit
Number of inputs/outputs: 24
auf Bestellung 38 Stücke:
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14+5.28 EUR
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IR4427PBF IR4427PBF INFINEON TECHNOLOGIES IR4427PBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; DIP8; -1.5÷1.5A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -1.5...1.5A
Power: 1W
Number of channels: 2
Supply voltage: 6...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-on time: 85ns
Turn-off time: 65ns
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IRFB4321PBF IRFB4321PBF INFINEON TECHNOLOGIES IRFB4321PBF-DTE.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 224 Stücke:
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20+3.69 EUR
28+2.57 EUR
36+1.99 EUR
50+1.73 EUR
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IRFB3004PBF IRFB3004PBF INFINEON TECHNOLOGIES irfs3004pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.75mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 69 Stücke:
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23+3.13 EUR
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IPP110N20N3GXKSA1 IPP110N20N3GXKSA1 INFINEON TECHNOLOGIES IPP110N20N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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22+3.36 EUR
29+2.55 EUR
33+2.2 EUR
34+2.1 EUR
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IKW25N120CS7XKSA1 IKW25N120CS7XKSA1 INFINEON TECHNOLOGIES IKW25N120CS7.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 37A; 125W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 37A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Turn-on time: 38ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Turn-off time: 490ns
auf Bestellung 212 Stücke:
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15+4.89 EUR
19+3.8 EUR
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IRLB8748PBF IRLB8748PBF INFINEON TECHNOLOGIES irlb8748pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 92A; 75W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 92A
Power dissipation: 75W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 345 Stücke:
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51+1.42 EUR
80+0.9 EUR
87+0.82 EUR
99+0.73 EUR
108+0.67 EUR
118+0.61 EUR
200+0.56 EUR
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IRFP4368PBFXKMA1 IRFP4368PBFXKMA1 INFINEON TECHNOLOGIES Infineon-IRFP4368-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a40153562c61512015 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 350A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 350A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 380nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 40 Stücke:
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11+6.94 EUR
15+4.93 EUR
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BC857BE6327 BC857BE6327 INFINEON TECHNOLOGIES BC857B-DTE.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
Produkt ist nicht verfügbar
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1EDN7550BXTSA1 1EDN7550BXTSA1 INFINEON TECHNOLOGIES 1EDN7550B.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; EiceDRIVER™
Kind of package: reel; tape
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: gate driver; low-side
Mounting: SMD
Case: PG-SOT23-6
Topology: single transistor
Output current: -8...4A
Number of channels: 1
Supply voltage: 4.5...20V
Voltage class: 80V
auf Bestellung 1346 Stücke:
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99+0.73 EUR
116+0.62 EUR
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S25FL128SAGNFI000 S25FL128SAGNFI000 INFINEON TECHNOLOGIES 001-98283%20Rev%20T.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; SPI; 133MHz; 2.7÷3.6V; WSON8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: SPI
Kind of interface: serial
Mounting: SMD
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Case: WSON8
Operating temperature: -40...85°C
auf Bestellung 279 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.75 EUR
Mindestbestellmenge: 16
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SPA11N80C3XKSA2 SPP_A11N80C3_Rev[1].2.6.pdf?folderId=db3a3043163797a6011638491238009b&fileId=db3a3043163797a60116385b2fcc00ec
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 34W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 34W
Case: TO220-3
On-state resistance: 0.45Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 85nC
Produkt ist nicht verfügbar
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IRLMS6802TRPBF irlms6802pbf.pdf
IRLMS6802TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.6A; 2W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.6A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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BC857CWH6327XTSA1 Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar
Type of transistor: PNP
Polarisation: bipolar
Mounting: SMD
Produkt ist nicht verfügbar
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BC857CE6433HTMA1 Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar
Type of transistor: PNP
Polarisation: bipolar
Mounting: SMD
Produkt ist nicht verfügbar
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IPD047N03LF2SATMA1 Infineon-IPD047N03LF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192b89c5f296484
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 71A; 65W; DPAK,TO252
Polarisation: unipolar
On-state resistance: 4.7mΩ
Drain-source voltage: 30V
Drain current: 71A
Power dissipation: 65W
Case: DPAK; TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Produkt ist nicht verfügbar
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IGW30N60TPXKSA1 IGW30N60TP.pdf
IGW30N60TPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 38A; 100W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 38A
Gate-emitter voltage: ±20V
Power dissipation: 100W
Pulsed collector current: 90A
Collector-emitter voltage: 600V
Technology: TRENCHSTOP™
Turn-on time: 38ns
Gate charge: 130nC
Turn-off time: 279ns
Produkt ist nicht verfügbar
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IRLML2246TRPBF irlml2246pbf.pdf
IRLML2246TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.6A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.6A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Kind of package: reel
auf Bestellung 5100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
272+0.26 EUR
394+0.18 EUR
550+0.13 EUR
625+0.11 EUR
695+0.1 EUR
1000+0.093 EUR
1300+0.09 EUR
3000+0.08 EUR
Mindestbestellmenge: 272
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IPA80R900P7XKSA1 IPA80R900P7.pdf
IPA80R900P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 27W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.6A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.86 EUR
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IPN80R900P7ATMA1 IPN80R900P7.pdf
IPN80R900P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 7W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 7W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IRFP9140NPBF irfp9140n.pdf
IRFP9140NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -21A; 120W; TO247AC
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -21A
Power dissipation: 120W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.117Ω
Mounting: THT
Gate charge: 64.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 311 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.79 EUR
39+1.87 EUR
44+1.63 EUR
50+1.49 EUR
100+1.34 EUR
250+1.19 EUR
Mindestbestellmenge: 26
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IRF3007STRLPBF irf3007spbf.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 62A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 62A
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Produkt ist nicht verfügbar
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IRF3415STRLPBF irf3415spbf.pdf
IRF3415STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Power dissipation: 200W
Case: TO262
Mounting: THT
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
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IRFR9120NTRPBF description irfr9120npbf.pdf
IRFR9120NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -6.5A; 39W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -6.5A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 934 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
46+1.56 EUR
71+1.01 EUR
108+0.67 EUR
200+0.59 EUR
500+0.52 EUR
Mindestbestellmenge: 46
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S25FL128LAGMFM010 S25FL.pdf
S25FL128LAGMFM010
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; SPI; 133MHz; 2.7÷3.6V; SO8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: SPI
Kind of interface: serial
Mounting: SMD
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Case: SO8
Operating temperature: -40...125°C
auf Bestellung 73 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.32 EUR
24+3.09 EUR
25+2.9 EUR
Mindestbestellmenge: 22
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BSC059N04LS6ATMA1 BSC059N04LS6ATMA1.pdf
BSC059N04LS6ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 38W
Case: PG-TDSON-8 FL
On-state resistance: 5.9mΩ
Mounting: SMD
Gate charge: 9.4nC
Kind of channel: enhancement
Technology: OptiMOS™ 6
Kind of package: reel; tape
Produkt ist nicht verfügbar
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IRF9310TRPBF irf9310pbf.pdf
IRF9310TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -20A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSS159NH6906XTSA1 Infineon-BSS159N-DS-v02_02-en.pdf?fileId=db3a304330f68606013108d8b2230036
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 230mA; 360mW; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.23A
Power dissipation: 0.36W
Case: SOT23
On-state resistance: 1.7Ω
Mounting: SMD
Application: automotive industry
Produkt ist nicht verfügbar
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CY8CKIT-143A download
CY8CKIT-143A
+1
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: Cypress; Bluetooth: 4.0 EDR
Type of development kit: Cypress
Bluetooth version: 4.0 EDR
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+17.22 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
CY8CKIT-042-BLE-A Infineon-CY8CKIT-042-BLE-A_Bluetooth_Low_Energy_Pioneer_Kit_Release_Notes-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0efc91fe12bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
CY8CKIT-042-BLE-A
+1
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: Cypress; evaluation board; Bluetooth: 4.2,BLE
Type of development kit: Cypress
Connection: USB B mini
Kind of module: evaluation board
Bluetooth version: 4.2; BLE
Produkt ist nicht verfügbar
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CY8CKIT-005 Infineon-CY8CKIT-005_MiniProg4_Quick_Start_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0f0123eb1859&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8CKIT-005
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: Cypress
Type of development kit: Cypress
Connection: USB C
Interface: JTAG; SWD
Produkt ist nicht verfügbar
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CY8CKIT-002 download
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: Cypress
Type of development kit: Cypress
Connection: USB B mini
Interface: I2C; JTAG; SWD
Produkt ist nicht verfügbar
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CY8CKIT-059 CY8CKIT_059.pdf
CY8CKIT-059
+1
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: Cypress; prototype board; Comp: CY8C5888LTI-LP097
Type of development kit: Cypress
Connection: USB B micro
Components: CY8C5888LTI-LP097
Interface: JTAG; SWD; USB
Kind of architecture: ARM; Cortex M3
Programmers and development kits features: integrated programmer/debugger; microcontroller I/O lines lead to goldpin connectors
Kit contents: prototype board
Produkt ist nicht verfügbar
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CY8CKIT-145-40xx Infineon-CY8CKIT-145-40XX_PSoC_4000S_Prototyping_Kit_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0efccdd91344&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8CKIT-145-40xx
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: Cypress; prototype board
Type of development kit: Cypress
Connection: USB
Kind of module: prototype board
Produkt ist nicht verfügbar
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CY8CKIT-062S2-43012 Infineon-CY8CKIT-062S2-43012_PSoC_62S2_Wi-Fi_BT_Pioneer_Kit_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0f01c8f11927&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - Unclassified
Description: CY8CKIT-062S2-43012
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+215.33 EUR
Mindestbestellmenge: 3
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BSC080N03MSGATMA1 BSC080N03MSG-DTE.pdf
BSC080N03MSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 53A; 35W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 53A
Power dissipation: 35W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 264 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
144+0.5 EUR
155+0.46 EUR
250+0.44 EUR
Mindestbestellmenge: 107
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IR2102SPBF description ir2101_2102.pdf
IR2102SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 160ns
Turn-off time: 150ns
Produkt ist nicht verfügbar
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IRFR15N20DTRPBF IRFR15N20DTRPBF.pdf
IRFR15N20DTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 17A; 140W; DPAK
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain current: 17A
Power dissipation: 140W
Drain-source voltage: 200V
Kind of package: reel
Case: DPAK
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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BCX53H6327XTSA1 BCX53.pdf
BCX53H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 2W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Frequency: 125MHz
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
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IRL2203NSTRLPBF irl2203nspbf.pdf
IRL2203NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 116A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 116A
Power dissipation: 170W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRLL2705TRPBF irll2705pbf.pdf
IRLL2705TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.8A; 2.1W; SOT223
Mounting: SMD
Case: SOT223
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Kind of package: reel
Polarisation: unipolar
Power dissipation: 2.1W
Drain current: 3.8A
Drain-source voltage: 55V
auf Bestellung 5378 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
72+1 EUR
114+0.63 EUR
153+0.47 EUR
174+0.41 EUR
200+0.36 EUR
500+0.31 EUR
1000+0.3 EUR
2500+0.28 EUR
Mindestbestellmenge: 72
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IRLL2703TRPBF IRSDS06555-1.pdf?t.download=true&u=5oefqw
IRLL2703TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 16A; 1W; SOT223
Case: SOT223
Mounting: SMD
Power dissipation: 1W
Gate-source voltage: ±16V
Pulsed drain current: 16A
Drain-source voltage: 30V
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 45mΩ
Drain current: 3.1A
Produkt ist nicht verfügbar
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IRLML2803TRPBF irlml2803.pdf
IRLML2803TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.2A; 0.4W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.2A
Power dissipation: 0.4W
Case: SOT23
On-state resistance: 0.3Ω
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 16509 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
247+0.29 EUR
358+0.2 EUR
421+0.17 EUR
521+0.14 EUR
603+0.12 EUR
1000+0.1 EUR
3000+0.086 EUR
6000+0.079 EUR
Mindestbestellmenge: 179
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IRLML5103TRPBF irlml5103pbf.pdf
IRLML5103TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.61A; 0.54W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.61A
Power dissipation: 0.54W
Case: SOT23
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 4081 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
220+0.33 EUR
385+0.19 EUR
550+0.13 EUR
1000+0.11 EUR
3000+0.096 EUR
Mindestbestellmenge: 157
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IRLML6346TRPBF irlml6346pbf.pdf
IRLML6346TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7A; Idm: 17A; 0.8W; SOT23
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Case: SOT23
Polarisation: unipolar
Gate charge: 2.9nC
On-state resistance: 80mΩ
Power dissipation: 0.8W
Drain current: 2.7A
Gate-source voltage: ±12V
Pulsed drain current: 17A
Drain-source voltage: 30V
auf Bestellung 1929 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
224+0.32 EUR
327+0.22 EUR
388+0.18 EUR
550+0.13 EUR
1000+0.11 EUR
Mindestbestellmenge: 162
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IRLML6246TRPBF irlml6246pbf.pdf
IRLML6246TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.1A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 46mΩ
Mounting: SMD
Gate charge: 3.5nC
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 10780 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
252+0.28 EUR
305+0.23 EUR
484+0.15 EUR
579+0.12 EUR
713+0.1 EUR
1000+0.088 EUR
3000+0.075 EUR
Mindestbestellmenge: 173
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IRF2805STRLPBF irf2805spbf.pdf
IRF2805STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 135A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 135A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSB015N04NX3GXUMA1 BSB015N04NX3G-DTE.pdf
BSB015N04NX3GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 89W
Case: CanPAK™ MX; MG-WDSON-2
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
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IPB015N04LGATMA1 IPB015N04LG.pdf
IPB015N04LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 260nC
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPB015N04NGATMA1 IPB015N04NG-DTE.pdf
IPB015N04NGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IRF7317TRPBF description irf7317pbf.pdf
IRF7317TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 6.6/-5.3A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 6.6/-5.3A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 29/58mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB031N08N5ATMA1 IPB031N08N5-DTE.pdf
IPB031N08N5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 167W; PG-TO263-3
Case: PG-TO263-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Mounting: SMD
Polarisation: unipolar
On-state resistance: 3.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 167W
Produkt ist nicht verfügbar
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BAS4002ARPPE6327HTSA1 BAS4002ARPPE6327.pdf
BAS4002ARPPE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 40V; If: 0.2A; Ifsm: 2A; SOT143; SMT
Case: SOT143
Max. off-state voltage: 40V
Load current: 0.2A
Max. forward impulse current: 2A
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Features of semiconductor devices: Schottky
Electrical mounting: SMT
Produkt ist nicht verfügbar
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BAS4004E6327HTSA1 BAS4004E6327HTSA1.pdf
BAS4004E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; 250mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: double series
Max. forward voltage: 1V
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
Produkt ist nicht verfügbar
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BAS4005E6327HTSA1 BAS4004E6327HTSA1.pdf
BAS4005E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; 250mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: common cathode; double
Max. forward voltage: 1V
Max. forward impulse current: 0.2A
Power dissipation: 0.25W
auf Bestellung 2296 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
410+0.17 EUR
447+0.16 EUR
621+0.12 EUR
822+0.087 EUR
1000+0.076 EUR
Mindestbestellmenge: 334
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IRS20752LTRPBF IRS20752ltrpbf.pdf
IRS20752LTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SOT23-6
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Mounting: SMD
Kind of package: reel; tape
Topology: single transistor
Case: SOT23-6
Operating temperature: -40...125°C
Output current: -240...160mA
Turn-on time: 225ns
Turn-off time: 255ns
Number of channels: 1
Supply voltage: 10...18V DC
Voltage class: 200V
auf Bestellung 2538 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
84+0.86 EUR
100+0.72 EUR
111+0.65 EUR
120+0.6 EUR
125+0.58 EUR
Mindestbestellmenge: 84
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IRF7306TRPBF description irf7306pbf.pdf
IRF7306TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 2W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3112 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.44 EUR
68+1.07 EUR
96+0.75 EUR
112+0.64 EUR
500+0.48 EUR
1000+0.43 EUR
2000+0.4 EUR
Mindestbestellmenge: 50
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AUIRF7309QTR auirf7309q.pdf
AUIRF7309QTR
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4/-3A
Power dissipation: 1.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.05/0.1Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 16.7nC
Produkt ist nicht verfügbar
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CY8C29466-24SXI description CY8C29466-24PVXI.pdf
CY8C29466-24SXI
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SO28; 2kBSRAM,32kBFLASH
Mounting: SMD
Operating temperature: -40...85°C
Case: SO28
Type of integrated circuit: PSoC microcontroller
Supply voltage: 3...5.25V DC
Number of inputs/outputs: 24
Memory: 2kB SRAM; 32kB FLASH
Clock frequency: 24MHz
Kind of core: 8-bit
Interface: I2C; SPI; UART
auf Bestellung 145 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+25.8 EUR
Mindestbestellmenge: 3
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CY8C29666-24PVXI CY8C29466-24PVXI.pdf
CY8C29666-24PVXI
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP48; 3÷5.25VDC; Core: 8-bit
Type of integrated circuit: PSoC microcontroller
Clock frequency: 24MHz
Interface: GPIO; I2C; SPI; UART
Supply voltage: 3...5.25V DC
Case: SSOP48
Mounting: SMD
Memory: 2kB SRAM; 32kB FLASH; 512kB SRAM
Operating temperature: -40...85°C
Kind of core: 8-bit
Number of inputs/outputs: 44
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+20.46 EUR
10+18.4 EUR
30+17.25 EUR
Mindestbestellmenge: 4
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CY8C22345-24PVXA CY8C22345-24PVXA.pdf
CY8C22345-24PVXA
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP28; 1kBSRAM,16kBFLASH
Type of integrated circuit: PSoC microcontroller
Clock frequency: 24MHz
Interface: I2C; SPI; UART
Supply voltage: 3...5.25V DC
Case: SSOP28
Mounting: SMD
Memory: 1kB SRAM; 16kB FLASH
Integrated circuit features: CapSense
Kind of core: 8-bit
Number of inputs/outputs: 24
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.28 EUR
Mindestbestellmenge: 14
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IR4427PBF description IR4427PBF.pdf
IR4427PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; DIP8; -1.5÷1.5A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -1.5...1.5A
Power: 1W
Number of channels: 2
Supply voltage: 6...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Turn-on time: 85ns
Turn-off time: 65ns
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.25 EUR
37+1.96 EUR
Mindestbestellmenge: 32
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IRFB4321PBF description IRFB4321PBF-DTE.pdf
IRFB4321PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 224 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.69 EUR
28+2.57 EUR
36+1.99 EUR
50+1.73 EUR
Mindestbestellmenge: 20
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IRFB3004PBF irfs3004pbf.pdf
IRFB3004PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 340A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 340A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.75mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 69 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.7 EUR
23+3.13 EUR
50+2.92 EUR
Mindestbestellmenge: 20
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IPP110N20N3GXKSA1 IPP110N20N3G-DTE.pdf
IPP110N20N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.36 EUR
29+2.55 EUR
33+2.2 EUR
34+2.1 EUR
Mindestbestellmenge: 22
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IKW25N120CS7XKSA1 IKW25N120CS7.pdf
IKW25N120CS7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 37A; 125W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 37A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Turn-on time: 38ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Turn-off time: 490ns
auf Bestellung 212 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.89 EUR
19+3.8 EUR
30+3.65 EUR
Mindestbestellmenge: 15
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IRLB8748PBF irlb8748pbf.pdf
IRLB8748PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 92A; 75W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 92A
Power dissipation: 75W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 345 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
51+1.42 EUR
80+0.9 EUR
87+0.82 EUR
99+0.73 EUR
108+0.67 EUR
118+0.61 EUR
200+0.56 EUR
Mindestbestellmenge: 51
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IRFP4368PBFXKMA1 Infineon-IRFP4368-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a40153562c61512015
IRFP4368PBFXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 350A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 350A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 380nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.94 EUR
15+4.93 EUR
25+4.58 EUR
Mindestbestellmenge: 11
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BC857BE6327 BC857B-DTE.pdf
BC857BE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1EDN7550BXTSA1 1EDN7550B.pdf
1EDN7550BXTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; EiceDRIVER™
Kind of package: reel; tape
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: gate driver; low-side
Mounting: SMD
Case: PG-SOT23-6
Topology: single transistor
Output current: -8...4A
Number of channels: 1
Supply voltage: 4.5...20V
Voltage class: 80V
auf Bestellung 1346 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
99+0.73 EUR
116+0.62 EUR
Mindestbestellmenge: 99
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S25FL128SAGNFI000 001-98283%20Rev%20T.pdf
S25FL128SAGNFI000
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; SPI; 133MHz; 2.7÷3.6V; WSON8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: SPI
Kind of interface: serial
Mounting: SMD
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Case: WSON8
Operating temperature: -40...85°C
auf Bestellung 279 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.75 EUR
Mindestbestellmenge: 16
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