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CY7C65632-28LTXC INFINEON TECHNOLOGIES download Category: USB interfaces - integrated circuits
Description: IC: HUB controller; GPIO,I2C,SPI,USB 2.0; 3.15÷3.45VDC; QFN28
Type of integrated circuit: HUB controller
Interface: GPIO; I2C; SPI; USB 2.0
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.45V DC
Case: QFN28
Integrated circuit features: USB HUB
Kind of core: 8-bit
Produkt ist nicht verfügbar
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CY7C65632-28LTXCT INFINEON TECHNOLOGIES download Category: USB interfaces - integrated circuits
Description: IC: HUB controller; GPIO,I2C,SPI,USB 2.0; 3.15÷3.45VDC; QFN28
Type of integrated circuit: HUB controller
Interface: GPIO; I2C; SPI; USB 2.0
Supply voltage: 3.15...3.45V DC
Case: QFN28
Integrated circuit features: USB HUB
Mounting: SMD
Operating temperature: 0...70°C
Kind of core: 8-bit
Produkt ist nicht verfügbar
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CY7C65642-48AXC CY7C65642-48AXC INFINEON TECHNOLOGIES Infineon-CY7C65642_HX2VL_VERY_LOW-POWER_USB_2.0_TETRAHUB_CONTROLLER-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecba5984534&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: USB interfaces - integrated circuits
Description: IC: HUB controller; GPIO,I2C,SPI,USB 2.0; 3.15÷3.45VDC; TQFP48
Type of integrated circuit: HUB controller
Interface: GPIO; I2C; SPI; USB 2.0
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.45V DC
Case: TQFP48
Integrated circuit features: USB HUB
Kind of core: 8-bit
Produkt ist nicht verfügbar
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CY7C65642-48AXCT CY7C65642-48AXCT INFINEON TECHNOLOGIES Infineon-CY7C65642_HX2VL_VERY_LOW-POWER_USB_2.0_TETRAHUB_CONTROLLER-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecba5984534&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: USB interfaces - integrated circuits
Description: IC: HUB controller; GPIO,I2C,SPI,USB 2.0; 3.15÷3.45VDC; TQFP48
Type of integrated circuit: HUB controller
Interface: GPIO; I2C; SPI; USB 2.0
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.45V DC
Case: TQFP48
Integrated circuit features: USB HUB
Kind of core: 8-bit
Produkt ist nicht verfügbar
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IR2011SPBF IR2011SPBF INFINEON TECHNOLOGIES IR2011SPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Operating temperature: -40...125°C
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Kind of package: tube
Output current: -1...1A
Turn-off time: 60ns
Turn-on time: 80ns
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Voltage class: 200V
auf Bestellung 71 Stücke:
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41+1.76 EUR
47+1.53 EUR
51+1.42 EUR
Mindestbestellmenge: 41
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IR2010PBF IR2010PBF INFINEON TECHNOLOGIES IR2010SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -3...3A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Voltage class: 200V
Topology: MOSFET half-bridge
Turn-off time: 65ns
Turn-on time: 95ns
Power: 1.6W
auf Bestellung 20 Stücke:
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14+5.19 EUR
16+4.7 EUR
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IR2085STRPBF IR2085STRPBF INFINEON TECHNOLOGIES Infineon-IR2085S-DS-v01_02-EN.pdf?fileId=5546d4625b62cd8a015bb0f752184828 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -1...1A
Power: 1W
Number of channels: 2
Supply voltage: 10...15V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 100V
Produkt ist nicht verfügbar
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IR2011PBF IR2011PBF INFINEON TECHNOLOGIES IR2011SPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -1...1A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Topology: MOSFET half-bridge
Turn-off time: 60ns
Turn-on time: 80ns
Power: 1W
auf Bestellung 46 Stücke:
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18+4.06 EUR
22+3.36 EUR
25+3.22 EUR
Mindestbestellmenge: 18
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AUIR2085STR AUIR2085STR INFINEON TECHNOLOGIES auir2085s.pdf?fileId=5546d462533600a4015355a82609133f Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -1...1A
Power: 625mW
Number of channels: 2
Supply voltage: 10...15V DC
Mounting: SMD
Kind of package: reel; tape
Voltage class: 100V
Produkt ist nicht verfügbar
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BCR166E6327 BCR166E6327 INFINEON TECHNOLOGIES BCR166.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Frequency: 160MHz
auf Bestellung 36 Stücke:
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36+1.99 EUR
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BCR162E6327 BCR162E6327 INFINEON TECHNOLOGIES BCR162.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Mounting: SMD
Case: SOT23
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Frequency: 200MHz
Polarisation: bipolar
Kind of transistor: BRT
auf Bestellung 5 Stücke:
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5+14.3 EUR
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BSC123N08NS3GATMA1 BSC123N08NS3GATMA1 INFINEON TECHNOLOGIES BSC123N08NS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 66W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 55A
Power dissipation: 66W
Case: PG-TDSON-8
On-state resistance: 12.3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Gate-source voltage: ±20V
auf Bestellung 2237 Stücke:
Lieferzeit 14-21 Tag (e)
64+1.13 EUR
87+0.82 EUR
103+0.7 EUR
109+0.66 EUR
250+0.63 EUR
500+0.6 EUR
1000+0.54 EUR
2000+0.5 EUR
Mindestbestellmenge: 64
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BTS50055-1TMB BTS50055-1TMB INFINEON TECHNOLOGIES BTS50055-1TMB.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 55A; Ch: 1; N-Channel; THT
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 55A
Number of channels: 1
Kind of output: N-Channel
Mounting: THT
Case: PG-TO220-7-11
On-state resistance: 4.4mΩ
Supply voltage: 5...34V DC
Technology: High Current PROFET
Produkt ist nicht verfügbar
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BTS50080-1TEA BTS50080-1TEA INFINEON TECHNOLOGIES BTS500801TEA.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 10A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-5-11
On-state resistance: 16mΩ
Supply voltage: 5.5...30V DC
Technology: High Current PROFET
Output voltage: 39V
auf Bestellung 348 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.16 EUR
21+3.47 EUR
100+2.95 EUR
Mindestbestellmenge: 14
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BTS50080-1TMA BTS50080-1TMA INFINEON TECHNOLOGIES BTS50080-1TMA.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.5A; Ch: 1; N-Channel; SMD
Case: PG-TO220-7-4
Technology: High Current PROFET
Kind of integrated circuit: high-side
Kind of output: N-Channel
Mounting: SMD
On-state resistance: 7mΩ
Number of channels: 1
Supply voltage: 5.5...38V DC
Output current: 9.5A
Type of integrated circuit: power switch
auf Bestellung 974 Stücke:
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12+6.45 EUR
14+5.42 EUR
25+4.88 EUR
100+4.52 EUR
250+4.3 EUR
500+3.88 EUR
Mindestbestellmenge: 12
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BTS50080-1TMB BTS50080-1TMB INFINEON TECHNOLOGIES BTS50080-1TMB.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.5A; Ch: 1; N-Channel; THT
Case: PG-TO220-7-12
Technology: High Current PROFET
Kind of integrated circuit: high-side
Kind of output: N-Channel
Mounting: THT
On-state resistance: 7mΩ
Number of channels: 1
Supply voltage: 5.5...38V DC
Output current: 9.5A
Type of integrated circuit: power switch
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.31 EUR
14+5.46 EUR
Mindestbestellmenge: 10
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SPD07N60C3ATMA1 INFINEON TECHNOLOGIES Infineon-SPD_U07N60C3-DS-v02_07-en.pdf?fileId=db3a30433f1b26e8013f1e7536e102d4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; 83W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 83W
Case: DPAK; TO252
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 21nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP045N10N3GXKSA1 IPP045N10N3GXKSA1 INFINEON TECHNOLOGIES IPP045N10N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 89 Stücke:
Lieferzeit 14-21 Tag (e)
28+2.56 EUR
37+1.97 EUR
50+1.57 EUR
Mindestbestellmenge: 28
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IRF7805ZTRPBF IRF7805ZTRPBF INFINEON TECHNOLOGIES irf7805zpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 2.5W; SO8
Case: SO8
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Power dissipation: 2.5W
Gate-source voltage: ±20V
Drain current: 16A
Drain-source voltage: 30V
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IRF3205ZPBFXKMA1 INFINEON TECHNOLOGIES Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 78A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 78A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRLR3410TRPBF IRLR3410TRPBF INFINEON TECHNOLOGIES irlr3410pbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 4725 Stücke:
Lieferzeit 14-21 Tag (e)
77+0.93 EUR
113+0.63 EUR
141+0.51 EUR
250+0.49 EUR
500+0.46 EUR
1000+0.41 EUR
2000+0.37 EUR
4000+0.34 EUR
Mindestbestellmenge: 77
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BFP405H6327XTSA1 BFP405H6327XTSA1 INFINEON TECHNOLOGIES BFP405.pdf Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 25mA; 0.075W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.5V
Collector current: 25mA
Power dissipation: 75mW
Case: SOT343
Current gain: 90...130
Mounting: SMD
Kind of package: reel; tape
Frequency: 25GHz
Produkt ist nicht verfügbar
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IRLR7843TRPBF IRLR7843TRPBF INFINEON TECHNOLOGIES IRLR7843TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 161A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 161A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 328 Stücke:
Lieferzeit 14-21 Tag (e)
62+1.16 EUR
71+1.02 EUR
77+0.93 EUR
95+0.76 EUR
102+0.7 EUR
250+0.68 EUR
Mindestbestellmenge: 62
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FP15R12W1T4_B3 FP15R12W1T4_B3 INFINEON TECHNOLOGIES FP15R12W1T4B3.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 15A
Case: AG-EASY1B-1
Power dissipation: 130W
Max. off-state voltage: 1.2kV
Collector current: 15A
Pulsed collector current: 30A
Gate-emitter voltage: ±20V
Semiconductor structure: diode/transistor
Technology: EasyPIM™ 1B
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
Mechanical mounting: screw
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
2+44.53 EUR
3+44.02 EUR
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FP75R12KT4 FP75R12KT4 INFINEON TECHNOLOGIES FP75R12KT4.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 75A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 385W
Max. off-state voltage: 1.2kV
Case: AG-ECONO3-3
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Technology: EconoPIM™ 3
Type of semiconductor module: IGBT
Application: Inverter
auf Bestellung 2 Stücke:
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1+323.04 EUR
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BFP450H6327XTSA1 INFINEON TECHNOLOGIES Infineon-BFP450-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f034c5f3916 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar
Type of transistor: NPN
Polarisation: bipolar
Mounting: SMD
Produkt ist nicht verfügbar
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BFP450H6327 BFP450H6327 INFINEON TECHNOLOGIES BFP450H6327-dte.pdf Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 0.17A; 0.5W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.5V
Collector current: 0.17A
Power dissipation: 0.5W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 24GHz
auf Bestellung 1163 Stücke:
Lieferzeit 14-21 Tag (e)
112+0.64 EUR
128+0.56 EUR
172+0.42 EUR
250+0.38 EUR
Mindestbestellmenge: 112
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TLE6251-2G TLE6251-2G INFINEON TECHNOLOGIES TLE6251-2G.pdf Category: CAN interfaces - integrated circuits
Description: IC: CAN transceiver; 5.5÷18VDC; PG-DSO-14; -40÷150°C; No.of rec: 1
Type of integrated circuit: CAN transceiver
Supply voltage: 5.5...18V DC
Case: PG-DSO-14
Interface: CAN
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 80mA
Produkt ist nicht verfügbar
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BSS214NH6327XTSA1 BSS214NH6327XTSA1 INFINEON TECHNOLOGIES BSS214NH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1719 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.39 EUR
272+0.26 EUR
438+0.16 EUR
536+0.13 EUR
638+0.11 EUR
1000+0.091 EUR
Mindestbestellmenge: 186
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BSL211SPH6327XTSA1 BSL211SPH6327XTSA1 INFINEON TECHNOLOGIES BSL211SPH6327XTSA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.7A; 2W; PG-TSOP-6
Case: PG-TSOP-6
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -4.7A
Drain-source voltage: -20V
On-state resistance: 67mΩ
Power dissipation: 2W
Gate-source voltage: ±12V
auf Bestellung 2879 Stücke:
Lieferzeit 14-21 Tag (e)
91+0.79 EUR
144+0.5 EUR
203+0.35 EUR
250+0.32 EUR
500+0.29 EUR
1000+0.26 EUR
Mindestbestellmenge: 91
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IKW25N120H3FKSA1 IKW25N120H3FKSA1 INFINEON TECHNOLOGIES IKW25N120H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 326W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 3
Manufacturer series: H3
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.11 EUR
13+5.83 EUR
15+5.09 EUR
16+4.65 EUR
Mindestbestellmenge: 12
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IHW25N120E1XKSA1 IHW25N120E1XKSA1 INFINEON TECHNOLOGIES IHW25N120E1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 25A; 92.4W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 92.4W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ RC
Turn-off time: 2004ns
auf Bestellung 141 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.52 EUR
24+2.99 EUR
30+2.57 EUR
60+2.43 EUR
Mindestbestellmenge: 16
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IRLR3110ZTRPBF IRLR3110ZTRPBF INFINEON TECHNOLOGIES irlr3110zpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1654 Stücke:
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38+1.92 EUR
43+1.68 EUR
48+1.51 EUR
66+1.1 EUR
100+0.96 EUR
125+0.92 EUR
250+0.81 EUR
500+0.75 EUR
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IRLR3110ZTRLPBF INFINEON TECHNOLOGIES irlr3110zpbf.pdf?fileId=5546d462533600a40153566cf6e2268a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 250A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 250A
On-state resistance: 14mΩ
Gate-source voltage: ±16V
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IRF7319TRPBF IRF7319TRPBF INFINEON TECHNOLOGIES irf7319pbf.pdf description Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.5/-4.9A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6.5/-4.9A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 29/58mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRL3103STRLPBF IRL3103STRLPBF INFINEON TECHNOLOGIES irl3103spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 64A
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRFH7084TRPBF IRFH7084TRPBF INFINEON TECHNOLOGIES IRFH7084TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFS3206TRRPBF IRFS3206TRRPBF INFINEON TECHNOLOGIES irfs3206pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 210A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DZ1070N22K INFINEON TECHNOLOGIES DZ1070N28K.pdf Category: Diode modules
Description: Module: diode; single diode; 2.2kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Semiconductor structure: single diode
Max. off-state voltage: 2.2kV
Load current: 1.07kA
Case: BG-PB70AT-1
Max. forward voltage: 0.75V
Max. forward impulse current: 41kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 1.1kA
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DZ1070N18K INFINEON TECHNOLOGIES DZ1070N28K.pdf Category: Diode modules
Description: Module: diode; single diode; 1.8kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Semiconductor structure: single diode
Max. off-state voltage: 1.8kV
Load current: 1.07kA
Case: BG-PB70AT-1
Max. forward voltage: 0.75V
Max. forward impulse current: 41kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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DZ1070N28K INFINEON TECHNOLOGIES DZ1070N28K.pdf Category: Diode modules
Description: Module: diode; single diode; 2.8kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Semiconductor structure: single diode
Max. off-state voltage: 2.8kV
Load current: 1.07kA
Case: BG-PB70AT-1
Max. forward voltage: 0.75V
Max. forward impulse current: 41kA
Electrical mounting: screw
Mechanical mounting: screw
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DZ1070N26K INFINEON TECHNOLOGIES DZ1070N28K.pdf Category: Diode modules
Description: Module: diode; single diode; 2.6kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Semiconductor structure: single diode
Max. off-state voltage: 2.6kV
Load current: 1.07kA
Case: BG-PB70AT-1
Max. forward voltage: 0.75V
Max. forward impulse current: 41kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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BCX71JE6327HTSA1 INFINEON TECHNOLOGIES bcw61_bcx71.pdf?folderId=db3a304314dca389011541d30fa21656&fileId=db3a304314dca3890115422f2cbc173b Category: PNP SMD transistors
Description: Transistor: PNP; bipolar
Type of transistor: PNP
Polarisation: bipolar
Mounting: SMD
Produkt ist nicht verfügbar
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IRF2907ZPBF IRF2907ZPBF INFINEON TECHNOLOGIES irf2907zpbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 330W
Technology: HEXFET®
auf Bestellung 87 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.48 EUR
22+3.35 EUR
29+2.49 EUR
50+2.23 EUR
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IMBG65R260M1HXTMA1 INFINEON TECHNOLOGIES Infineon-IMBG65R260M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49f0e3671656 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 6A; 65W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 65W
Case: D2PAK-7
Gate-source voltage: -5...23V
On-state resistance: 0.26Ω
Mounting: SMD
Gate charge: 6nC
Kind of channel: enhancement
auf Bestellung 4000 Stücke:
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1000+2.63 EUR
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FM25L16B-GTR FM25L16B-GTR INFINEON TECHNOLOGIES Infineon-FM25L16B_16-Kbit_(2_K_8)_Serial_(SPI)_F-RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec917394180&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; SO8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Interface: SPI
Supply voltage: 2.7...3.6V DC
Memory: 16kb FRAM
Memory organisation: 2kx8bit
Clock frequency: 20MHz
Case: SO8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Produkt ist nicht verfügbar
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IRLS3036TRL7PP IRLS3036TRL7PP INFINEON TECHNOLOGIES irls3036-7ppbf.pdf?fileId=5546d462533600a401535671c05a270b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; Idm: 1kA; 380W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 210A
Power dissipation: 380W
Case: D2PAK-7
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 1.9mΩ
Gate-source voltage: ±16V
Pulsed drain current: 1kA
auf Bestellung 303 Stücke:
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19+3.89 EUR
25+2.86 EUR
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BSC160N10NS3GATMA1 BSC160N10NS3GATMA1 INFINEON TECHNOLOGIES BSC160N10NS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 60W; PG-TDSON-8
Mounting: SMD
On-state resistance: 16mΩ
Drain current: 42A
Gate-source voltage: ±20V
Power dissipation: 60W
Drain-source voltage: 100V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TDSON-8
Polarisation: unipolar
Produkt ist nicht verfügbar
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SMBT3904SH6327XTSA1 SMBT3904SH6327XTSA1 INFINEON TECHNOLOGIES SMBT3904SH6327.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.25W; SOT363
Mounting: SMD
Type of transistor: NPN
Case: SOT363
Collector current: 0.2A
Power dissipation: 0.25W
Collector-emitter voltage: 40V
Frequency: 300MHz
Polarisation: bipolar
auf Bestellung 63 Stücke:
Lieferzeit 14-21 Tag (e)
63+1.13 EUR
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CY8CMBR3102-SX1I CY8CMBR3102-SX1I INFINEON TECHNOLOGIES Infineon-CY8CMBR3002_CY8CMBR3102_CY8CMBR3106S_CY8CMBR3108_CY8CMBR3110_CY8CMBR3116-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe3508318e Category: Interfaces others - integrated circuits
Description: IC: PSoC microcontroller; 1.71÷5.5VDC; GPIO,I2C; SMD; SO8
Case: SO8
Mounting: SMD
Integrated circuit features: watchdog
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Type of integrated circuit: PSoC microcontroller
Interface: GPIO; I2C
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CY8CMBR3108-LQXI INFINEON TECHNOLOGIES Infineon-CY8CMBR3002_CY8CMBR3102_CY8CMBR3106S_CY8CMBR3108_CY8CMBR3110_CY8CMBR3116-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe3508318e Category: Interfaces others - integrated circuits
Description: IC: PSoC microcontroller; 1.71÷5.5VDC; GPIO,I2C; SMD; QFN16
Case: QFN16
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Type of integrated circuit: PSoC microcontroller
Interface: GPIO; I2C
Produkt ist nicht verfügbar
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CY8CMBR3108-LQXIT INFINEON TECHNOLOGIES Infineon-CY8CMBR3002_CY8CMBR3102_CY8CMBR3106S_CY8CMBR3108_CY8CMBR3110_CY8CMBR3116-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe3508318e Category: Interfaces others - integrated circuits
Description: IC: PSoC microcontroller; 1.71÷5.5VDC; GPIO,I2C; SMD; QFN16
Case: QFN16
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Type of integrated circuit: PSoC microcontroller
Interface: GPIO; I2C
Produkt ist nicht verfügbar
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CY8CMBR3106S-LQXI INFINEON TECHNOLOGIES Infineon-CY8CMBR3002_CY8CMBR3102_CY8CMBR3106S_CY8CMBR3108_CY8CMBR3110_CY8CMBR3116-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe3508318e Category: Drivers - integrated circuits
Description: CY8CMBR3106S-LQXI
auf Bestellung 2450 Stücke:
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490+1.22 EUR
Mindestbestellmenge: 490
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IRFR3410TRPBF IRFR3410TRPBF INFINEON TECHNOLOGIES irfr3410pbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR3410TRLPBF INFINEON TECHNOLOGIES irfr3410pbf.pdf?fileId=5546d462533600a401535630fe762090 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ICE2QS02GXUMA1 ICE2QS02GXUMA1 INFINEON TECHNOLOGIES ICE2QS02G.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 20÷150kHz; Ch: 1; PG-DSO-8; flyback; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 20...150kHz
Number of channels: 1
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Topology: flyback
Input voltage: 80...265V
Application: SMPS
Operating voltage: 11...25V DC
auf Bestellung 2121 Stücke:
Lieferzeit 14-21 Tag (e)
52+1.4 EUR
61+1.17 EUR
67+1.07 EUR
76+0.94 EUR
Mindestbestellmenge: 52
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IRLMS5703TRPBF IRLMS5703TRPBF INFINEON TECHNOLOGIES irlms5703pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.3A; 1.7W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.3A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRLMS1503TRPBF IRLMS1503TRPBF INFINEON TECHNOLOGIES irlms1503pbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.2A; 1.7W; TSOP6
Mounting: SMD
Case: TSOP6
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Kind of package: reel
Power dissipation: 1.7W
Drain current: 3.2A
Drain-source voltage: 30V
Polarisation: unipolar
Produkt ist nicht verfügbar
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IRLMS1902TRPBF IRLMS1902TRPBF INFINEON TECHNOLOGIES irlms1902pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 1.7W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRLMS2002TRPBF IRLMS2002TRPBF INFINEON TECHNOLOGIES irlms2002pbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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CY7C65632-28LTXC download
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: HUB controller; GPIO,I2C,SPI,USB 2.0; 3.15÷3.45VDC; QFN28
Type of integrated circuit: HUB controller
Interface: GPIO; I2C; SPI; USB 2.0
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.45V DC
Case: QFN28
Integrated circuit features: USB HUB
Kind of core: 8-bit
Produkt ist nicht verfügbar
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CY7C65632-28LTXCT download
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: HUB controller; GPIO,I2C,SPI,USB 2.0; 3.15÷3.45VDC; QFN28
Type of integrated circuit: HUB controller
Interface: GPIO; I2C; SPI; USB 2.0
Supply voltage: 3.15...3.45V DC
Case: QFN28
Integrated circuit features: USB HUB
Mounting: SMD
Operating temperature: 0...70°C
Kind of core: 8-bit
Produkt ist nicht verfügbar
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CY7C65642-48AXC Infineon-CY7C65642_HX2VL_VERY_LOW-POWER_USB_2.0_TETRAHUB_CONTROLLER-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecba5984534&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C65642-48AXC
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: HUB controller; GPIO,I2C,SPI,USB 2.0; 3.15÷3.45VDC; TQFP48
Type of integrated circuit: HUB controller
Interface: GPIO; I2C; SPI; USB 2.0
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.45V DC
Case: TQFP48
Integrated circuit features: USB HUB
Kind of core: 8-bit
Produkt ist nicht verfügbar
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CY7C65642-48AXCT Infineon-CY7C65642_HX2VL_VERY_LOW-POWER_USB_2.0_TETRAHUB_CONTROLLER-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecba5984534&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C65642-48AXCT
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: HUB controller; GPIO,I2C,SPI,USB 2.0; 3.15÷3.45VDC; TQFP48
Type of integrated circuit: HUB controller
Interface: GPIO; I2C; SPI; USB 2.0
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.45V DC
Case: TQFP48
Integrated circuit features: USB HUB
Kind of core: 8-bit
Produkt ist nicht verfügbar
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IR2011SPBF description IR2011SPBF.pdf
IR2011SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Operating temperature: -40...125°C
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Kind of package: tube
Output current: -1...1A
Turn-off time: 60ns
Turn-on time: 80ns
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Voltage class: 200V
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.76 EUR
47+1.53 EUR
51+1.42 EUR
Mindestbestellmenge: 41
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IR2010PBF IR2010SPBF.pdf
IR2010PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -3...3A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Voltage class: 200V
Topology: MOSFET half-bridge
Turn-off time: 65ns
Turn-on time: 95ns
Power: 1.6W
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.19 EUR
16+4.7 EUR
Mindestbestellmenge: 14
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IR2085STRPBF Infineon-IR2085S-DS-v01_02-EN.pdf?fileId=5546d4625b62cd8a015bb0f752184828
IR2085STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -1...1A
Power: 1W
Number of channels: 2
Supply voltage: 10...15V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 100V
Produkt ist nicht verfügbar
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IR2011PBF description IR2011SPBF.pdf
IR2011PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -1...1A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Topology: MOSFET half-bridge
Turn-off time: 60ns
Turn-on time: 80ns
Power: 1W
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.06 EUR
22+3.36 EUR
25+3.22 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
AUIR2085STR auir2085s.pdf?fileId=5546d462533600a4015355a82609133f
AUIR2085STR
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -1...1A
Power: 625mW
Number of channels: 2
Supply voltage: 10...15V DC
Mounting: SMD
Kind of package: reel; tape
Voltage class: 100V
Produkt ist nicht verfügbar
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BCR166E6327 BCR166.pdf
BCR166E6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Frequency: 160MHz
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+1.99 EUR
Mindestbestellmenge: 36
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BCR162E6327 BCR162.pdf
BCR162E6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Mounting: SMD
Case: SOT23
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Frequency: 200MHz
Polarisation: bipolar
Kind of transistor: BRT
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.3 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
BSC123N08NS3GATMA1 BSC123N08NS3G-DTE.pdf
BSC123N08NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 66W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 55A
Power dissipation: 66W
Case: PG-TDSON-8
On-state resistance: 12.3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Gate-source voltage: ±20V
auf Bestellung 2237 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
64+1.13 EUR
87+0.82 EUR
103+0.7 EUR
109+0.66 EUR
250+0.63 EUR
500+0.6 EUR
1000+0.54 EUR
2000+0.5 EUR
Mindestbestellmenge: 64
Im Einkaufswagen  Stück im Wert von  UAH
BTS50055-1TMB BTS50055-1TMB.pdf
BTS50055-1TMB
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 55A; Ch: 1; N-Channel; THT
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 55A
Number of channels: 1
Kind of output: N-Channel
Mounting: THT
Case: PG-TO220-7-11
On-state resistance: 4.4mΩ
Supply voltage: 5...34V DC
Technology: High Current PROFET
Produkt ist nicht verfügbar
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BTS50080-1TEA BTS500801TEA.pdf
BTS50080-1TEA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 10A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-5-11
On-state resistance: 16mΩ
Supply voltage: 5.5...30V DC
Technology: High Current PROFET
Output voltage: 39V
auf Bestellung 348 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.16 EUR
21+3.47 EUR
100+2.95 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
BTS50080-1TMA BTS50080-1TMA.pdf
BTS50080-1TMA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.5A; Ch: 1; N-Channel; SMD
Case: PG-TO220-7-4
Technology: High Current PROFET
Kind of integrated circuit: high-side
Kind of output: N-Channel
Mounting: SMD
On-state resistance: 7mΩ
Number of channels: 1
Supply voltage: 5.5...38V DC
Output current: 9.5A
Type of integrated circuit: power switch
auf Bestellung 974 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.45 EUR
14+5.42 EUR
25+4.88 EUR
100+4.52 EUR
250+4.3 EUR
500+3.88 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
BTS50080-1TMB BTS50080-1TMB.pdf
BTS50080-1TMB
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.5A; Ch: 1; N-Channel; THT
Case: PG-TO220-7-12
Technology: High Current PROFET
Kind of integrated circuit: high-side
Kind of output: N-Channel
Mounting: THT
On-state resistance: 7mΩ
Number of channels: 1
Supply voltage: 5.5...38V DC
Output current: 9.5A
Type of integrated circuit: power switch
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.31 EUR
14+5.46 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
SPD07N60C3ATMA1 Infineon-SPD_U07N60C3-DS-v02_07-en.pdf?fileId=db3a30433f1b26e8013f1e7536e102d4
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; 83W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 83W
Case: DPAK; TO252
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 21nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP045N10N3GXKSA1 IPP045N10N3G-DTE.pdf
IPP045N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 89 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.56 EUR
37+1.97 EUR
50+1.57 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
IRF7805ZTRPBF irf7805zpbf.pdf
IRF7805ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 2.5W; SO8
Case: SO8
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Power dissipation: 2.5W
Gate-source voltage: ±20V
Drain current: 16A
Drain-source voltage: 30V
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF3205ZPBFXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 78A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 78A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR3410TRPBF description irlr3410pbf.pdf
IRLR3410TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 4725 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
77+0.93 EUR
113+0.63 EUR
141+0.51 EUR
250+0.49 EUR
500+0.46 EUR
1000+0.41 EUR
2000+0.37 EUR
4000+0.34 EUR
Mindestbestellmenge: 77
Im Einkaufswagen  Stück im Wert von  UAH
BFP405H6327XTSA1 BFP405.pdf
BFP405H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 25mA; 0.075W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.5V
Collector current: 25mA
Power dissipation: 75mW
Case: SOT343
Current gain: 90...130
Mounting: SMD
Kind of package: reel; tape
Frequency: 25GHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR7843TRPBF IRLR7843TRPBF.pdf
IRLR7843TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 161A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 161A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 328 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
62+1.16 EUR
71+1.02 EUR
77+0.93 EUR
95+0.76 EUR
102+0.7 EUR
250+0.68 EUR
Mindestbestellmenge: 62
Im Einkaufswagen  Stück im Wert von  UAH
FP15R12W1T4_B3 FP15R12W1T4B3.pdf
FP15R12W1T4_B3
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 15A
Case: AG-EASY1B-1
Power dissipation: 130W
Max. off-state voltage: 1.2kV
Collector current: 15A
Pulsed collector current: 30A
Gate-emitter voltage: ±20V
Semiconductor structure: diode/transistor
Technology: EasyPIM™ 1B
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
Mechanical mounting: screw
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+44.53 EUR
3+44.02 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FP75R12KT4 FP75R12KT4.pdf
FP75R12KT4
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 75A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 385W
Max. off-state voltage: 1.2kV
Case: AG-ECONO3-3
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Technology: EconoPIM™ 3
Type of semiconductor module: IGBT
Application: Inverter
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+323.04 EUR
Im Einkaufswagen  Stück im Wert von  UAH
BFP450H6327XTSA1 Infineon-BFP450-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f034c5f3916
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar
Type of transistor: NPN
Polarisation: bipolar
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BFP450H6327 BFP450H6327-dte.pdf
BFP450H6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 0.17A; 0.5W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.5V
Collector current: 0.17A
Power dissipation: 0.5W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 24GHz
auf Bestellung 1163 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
112+0.64 EUR
128+0.56 EUR
172+0.42 EUR
250+0.38 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
TLE6251-2G TLE6251-2G.pdf
TLE6251-2G
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: CAN transceiver; 5.5÷18VDC; PG-DSO-14; -40÷150°C; No.of rec: 1
Type of integrated circuit: CAN transceiver
Supply voltage: 5.5...18V DC
Case: PG-DSO-14
Interface: CAN
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 80mA
Produkt ist nicht verfügbar
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BSS214NH6327XTSA1 BSS214NH6327XTSA1.pdf
BSS214NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1719 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
272+0.26 EUR
438+0.16 EUR
536+0.13 EUR
638+0.11 EUR
1000+0.091 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
BSL211SPH6327XTSA1 BSL211SPH6327XTSA1-dte.pdf
BSL211SPH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.7A; 2W; PG-TSOP-6
Case: PG-TSOP-6
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -4.7A
Drain-source voltage: -20V
On-state resistance: 67mΩ
Power dissipation: 2W
Gate-source voltage: ±12V
auf Bestellung 2879 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
91+0.79 EUR
144+0.5 EUR
203+0.35 EUR
250+0.32 EUR
500+0.29 EUR
1000+0.26 EUR
Mindestbestellmenge: 91
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IKW25N120H3FKSA1 IKW25N120H3-DTE.pdf
IKW25N120H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 326W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 3
Manufacturer series: H3
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.11 EUR
13+5.83 EUR
15+5.09 EUR
16+4.65 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IHW25N120E1XKSA1 IHW25N120E1.pdf
IHW25N120E1XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 25A; 92.4W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 92.4W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ RC
Turn-off time: 2004ns
auf Bestellung 141 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.52 EUR
24+2.99 EUR
30+2.57 EUR
60+2.43 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
IRLR3110ZTRPBF irlr3110zpbf.pdf
IRLR3110ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1654 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.92 EUR
43+1.68 EUR
48+1.51 EUR
66+1.1 EUR
100+0.96 EUR
125+0.92 EUR
250+0.81 EUR
500+0.75 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
IRLR3110ZTRLPBF irlr3110zpbf.pdf?fileId=5546d462533600a40153566cf6e2268a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 250A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 250A
On-state resistance: 14mΩ
Gate-source voltage: ±16V
Produkt ist nicht verfügbar
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IRF7319TRPBF description irf7319pbf.pdf
IRF7319TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.5/-4.9A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6.5/-4.9A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 29/58mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRL3103STRLPBF irl3103spbf.pdf
IRL3103STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 64A
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRFH7084TRPBF IRFH7084TRPBF.pdf
IRFH7084TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS3206TRRPBF irfs3206pbf.pdf
IRFS3206TRRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 210A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DZ1070N22K DZ1070N28K.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 2.2kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Semiconductor structure: single diode
Max. off-state voltage: 2.2kV
Load current: 1.07kA
Case: BG-PB70AT-1
Max. forward voltage: 0.75V
Max. forward impulse current: 41kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 1.1kA
Produkt ist nicht verfügbar
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DZ1070N18K DZ1070N28K.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 1.8kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Semiconductor structure: single diode
Max. off-state voltage: 1.8kV
Load current: 1.07kA
Case: BG-PB70AT-1
Max. forward voltage: 0.75V
Max. forward impulse current: 41kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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DZ1070N28K DZ1070N28K.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 2.8kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Semiconductor structure: single diode
Max. off-state voltage: 2.8kV
Load current: 1.07kA
Case: BG-PB70AT-1
Max. forward voltage: 0.75V
Max. forward impulse current: 41kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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DZ1070N26K DZ1070N28K.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 2.6kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Semiconductor structure: single diode
Max. off-state voltage: 2.6kV
Load current: 1.07kA
Case: BG-PB70AT-1
Max. forward voltage: 0.75V
Max. forward impulse current: 41kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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BCX71JE6327HTSA1 bcw61_bcx71.pdf?folderId=db3a304314dca389011541d30fa21656&fileId=db3a304314dca3890115422f2cbc173b
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar
Type of transistor: PNP
Polarisation: bipolar
Mounting: SMD
Produkt ist nicht verfügbar
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IRF2907ZPBF irf2907zpbf.pdf
IRF2907ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 330W
Technology: HEXFET®
auf Bestellung 87 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.48 EUR
22+3.35 EUR
29+2.49 EUR
50+2.23 EUR
Mindestbestellmenge: 16
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IMBG65R260M1HXTMA1 Infineon-IMBG65R260M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49f0e3671656
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 6A; 65W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 65W
Case: D2PAK-7
Gate-source voltage: -5...23V
On-state resistance: 0.26Ω
Mounting: SMD
Gate charge: 6nC
Kind of channel: enhancement
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+2.63 EUR
Mindestbestellmenge: 1000
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FM25L16B-GTR Infineon-FM25L16B_16-Kbit_(2_K_8)_Serial_(SPI)_F-RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec917394180&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM25L16B-GTR
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; SO8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Interface: SPI
Supply voltage: 2.7...3.6V DC
Memory: 16kb FRAM
Memory organisation: 2kx8bit
Clock frequency: 20MHz
Case: SO8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Produkt ist nicht verfügbar
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IRLS3036TRL7PP irls3036-7ppbf.pdf?fileId=5546d462533600a401535671c05a270b
IRLS3036TRL7PP
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; Idm: 1kA; 380W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 210A
Power dissipation: 380W
Case: D2PAK-7
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 1.9mΩ
Gate-source voltage: ±16V
Pulsed drain current: 1kA
auf Bestellung 303 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.89 EUR
25+2.86 EUR
Mindestbestellmenge: 19
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BSC160N10NS3GATMA1 BSC160N10NS3G-DTE.pdf
BSC160N10NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 60W; PG-TDSON-8
Mounting: SMD
On-state resistance: 16mΩ
Drain current: 42A
Gate-source voltage: ±20V
Power dissipation: 60W
Drain-source voltage: 100V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TDSON-8
Polarisation: unipolar
Produkt ist nicht verfügbar
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SMBT3904SH6327XTSA1 SMBT3904SH6327.pdf
SMBT3904SH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.25W; SOT363
Mounting: SMD
Type of transistor: NPN
Case: SOT363
Collector current: 0.2A
Power dissipation: 0.25W
Collector-emitter voltage: 40V
Frequency: 300MHz
Polarisation: bipolar
auf Bestellung 63 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
63+1.13 EUR
Mindestbestellmenge: 63
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CY8CMBR3102-SX1I Infineon-CY8CMBR3002_CY8CMBR3102_CY8CMBR3106S_CY8CMBR3108_CY8CMBR3110_CY8CMBR3116-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe3508318e
CY8CMBR3102-SX1I
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: PSoC microcontroller; 1.71÷5.5VDC; GPIO,I2C; SMD; SO8
Case: SO8
Mounting: SMD
Integrated circuit features: watchdog
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Type of integrated circuit: PSoC microcontroller
Interface: GPIO; I2C
Produkt ist nicht verfügbar
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CY8CMBR3108-LQXI Infineon-CY8CMBR3002_CY8CMBR3102_CY8CMBR3106S_CY8CMBR3108_CY8CMBR3110_CY8CMBR3116-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe3508318e
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: PSoC microcontroller; 1.71÷5.5VDC; GPIO,I2C; SMD; QFN16
Case: QFN16
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Type of integrated circuit: PSoC microcontroller
Interface: GPIO; I2C
Produkt ist nicht verfügbar
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CY8CMBR3108-LQXIT Infineon-CY8CMBR3002_CY8CMBR3102_CY8CMBR3106S_CY8CMBR3108_CY8CMBR3110_CY8CMBR3116-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe3508318e
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: PSoC microcontroller; 1.71÷5.5VDC; GPIO,I2C; SMD; QFN16
Case: QFN16
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Type of integrated circuit: PSoC microcontroller
Interface: GPIO; I2C
Produkt ist nicht verfügbar
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CY8CMBR3106S-LQXI Infineon-CY8CMBR3002_CY8CMBR3102_CY8CMBR3106S_CY8CMBR3108_CY8CMBR3110_CY8CMBR3116-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe3508318e
Hersteller: INFINEON TECHNOLOGIES
Category: Drivers - integrated circuits
Description: CY8CMBR3106S-LQXI
auf Bestellung 2450 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
490+1.22 EUR
Mindestbestellmenge: 490
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IRFR3410TRPBF description irfr3410pbf.pdf
IRFR3410TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR3410TRLPBF irfr3410pbf.pdf?fileId=5546d462533600a401535630fe762090
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ICE2QS02GXUMA1 ICE2QS02G.pdf
ICE2QS02GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 20÷150kHz; Ch: 1; PG-DSO-8; flyback; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 20...150kHz
Number of channels: 1
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Topology: flyback
Input voltage: 80...265V
Application: SMPS
Operating voltage: 11...25V DC
auf Bestellung 2121 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
52+1.4 EUR
61+1.17 EUR
67+1.07 EUR
76+0.94 EUR
Mindestbestellmenge: 52
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IRLMS5703TRPBF irlms5703pbf.pdf
IRLMS5703TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.3A; 1.7W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.3A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRLMS1503TRPBF description irlms1503pbf.pdf
IRLMS1503TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.2A; 1.7W; TSOP6
Mounting: SMD
Case: TSOP6
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Kind of package: reel
Power dissipation: 1.7W
Drain current: 3.2A
Drain-source voltage: 30V
Polarisation: unipolar
Produkt ist nicht verfügbar
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IRLMS1902TRPBF irlms1902pbf.pdf
IRLMS1902TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 1.7W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRLMS2002TRPBF description irlms2002pbf.pdf
IRLMS2002TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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