Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (118568) > Seite 1967 nach 1977

Wählen Sie Seite:   [  << Vorherige Seite ]  1 197 394 591 788 985 1182 1379 1576 1773 1962 1963 1964 1965 1966 1967 1968 1969 1970 1971 1972 1977  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IPW60R170CFD7 IPW60R170CFD7 INFINEON TECHNOLOGIES IPW60R170CFD7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 75W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 75W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.325Ω
Mounting: THT
Gate charge: 28nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R199CPXKSA1 IPP60R199CPXKSA1 INFINEON TECHNOLOGIES IPP60R199CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 139W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 139W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.76 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IRFML8244TRPBF IRFML8244TRPBF INFINEON TECHNOLOGIES irfml8244pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 5.8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 5.8A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 5.4nC
Kind of channel: enhancement
auf Bestellung 3558 Stücke:
Lieferzeit 14-21 Tag (e)
295+0.24 EUR
338+0.21 EUR
371+0.19 EUR
527+0.14 EUR
650+0.11 EUR
1000+0.1 EUR
3000+0.09 EUR
Mindestbestellmenge: 295
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R385CPXKSA1 IPP60R385CPXKSA1 INFINEON TECHNOLOGIES IPP60R385CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO220-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.385Ω
Drain current: 9A
Gate-source voltage: ±20V
Power dissipation: 83W
Drain-source voltage: 600V
Technology: CoolMOS™ CP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO220-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB60R385CPATMA1 IPB60R385CPATMA1 INFINEON TECHNOLOGIES IPB60R385CP-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO263-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 0.385Ω
Drain current: 9A
Gate-source voltage: ±20V
Power dissipation: 83W
Drain-source voltage: 600V
Technology: CoolMOS™ CP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO263-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R385CPATMA1 INFINEON TECHNOLOGIES Infineon-IPD60R385CP-DS-v02_04-EN.pdf?fileId=db3a30432313ff5e012385595fd16763 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; Idm: 27A; 83W; PG-TO252
Mounting: SMD
Polarisation: unipolar
On-state resistance: 0.385Ω
Drain current: 5.7A
Gate-source voltage: ±20V
Pulsed drain current: 27A
Power dissipation: 83W
Drain-source voltage: 600V
Technology: CoolMOS™ CP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO252
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPL60R385CPAUMA1 IPL60R385CPAUMA1 INFINEON TECHNOLOGIES IPL60R385CP-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-VSON-4
Mounting: SMD
Polarisation: unipolar
On-state resistance: 0.385Ω
Drain current: 9A
Gate-source voltage: ±20V
Power dissipation: 83W
Drain-source voltage: 600V
Technology: CoolMOS™ CP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-VSON-4
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA60R125C6XKSA1 IPA60R125C6XKSA1 INFINEON TECHNOLOGIES IPA60R125C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.53 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IPA60R125CPXKSA1 IPA60R125CPXKSA1 INFINEON TECHNOLOGIES IPA60R125CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 35W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.29 EUR
12+6.28 EUR
15+5.05 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IPA60R125P6XKSA1 IPA60R125P6XKSA1 INFINEON TECHNOLOGIES IPA60R125P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1ED020I12B2XUMA1 INFINEON TECHNOLOGIES infineon-1ed020i12-b2-datasheet-en.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; -2÷2A; Ch: 1
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Mounting: SMD
Case: PG-DSO-16-15
Kind of package: reel; tape
Protection: undervoltage UVP
Output current: -2...2A
Supply voltage: 0...28V; 4.5...5.5V
Number of channels: 1
Voltage class: 0.6/1.2kV
Integrated circuit features: active Miller clamp; galvanically isolated
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL512T10TFI010 S29GL512T10TFI010 INFINEON TECHNOLOGIES infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; TSOP56; parallel
Operating temperature: -40...85°C
Memory: 512Mb FLASH
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GT10TFI010 INFINEON TECHNOLOGIES infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; TSOP56; parallel
Operating temperature: -40...85°C
Memory: 1Gb FLASH
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GT10TFA010 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 100ns; TSOP56; parallel
Operating temperature: -40...85°C
Memory: 1Gb FLASH
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Application: automotive
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GT10TFI013 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 100ns; TSOP56; parallel
Operating temperature: -40...85°C
Memory: 1Gb FLASH
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GT10TFI020 INFINEON TECHNOLOGIES infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 100ns; TSOP56; parallel
Operating temperature: -40...85°C
Memory: 1Gb FLASH
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GT10TFI030 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 100ns; TSOP56; parallel
Operating temperature: -40...85°C
Memory: 1Gb FLASH
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL512T10TFA010 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56; in-tray
Operating temperature: -40...85°C
Memory: 512Mb FLASH
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Application: automotive
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL512T10TFI013 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56
Operating temperature: -40...85°C
Memory: 512Mb FLASH
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL512T10TFI020 INFINEON TECHNOLOGIES infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56; in-tray
Operating temperature: -40...85°C
Memory: 512Mb FLASH
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL512T10TFI023 INFINEON TECHNOLOGIES infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56
Operating temperature: -40...85°C
Memory: 512Mb FLASH
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL512T10TFI030 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56; in-tray
Operating temperature: -40...85°C
Memory: 512Mb FLASH
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL512T10TFI040 INFINEON TECHNOLOGIES infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56; in-tray
Operating temperature: -40...85°C
Memory: 512Mb FLASH
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL512T10TFI043 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56
Operating temperature: -40...85°C
Memory: 512Mb FLASH
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS116E6327HTSA1 BAS116E6327HTSA1 INFINEON TECHNOLOGIES BAS116E6327.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 0.6us; SOT23; Ufmax: 1.25V; 370mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 0.6µs
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.37W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
auf Bestellung 5643 Stücke:
Lieferzeit 14-21 Tag (e)
334+0.21 EUR
410+0.17 EUR
468+0.15 EUR
569+0.13 EUR
771+0.093 EUR
1107+0.065 EUR
1320+0.054 EUR
3000+0.047 EUR
Mindestbestellmenge: 334
Im Einkaufswagen  Stück im Wert von  UAH
SMBT3906E6327HTSA1 SMBT3906E6327HTSA1 INFINEON TECHNOLOGIES SMBT3906E6327.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.33W; SOT23
Case: SOT23
Type of transistor: PNP
Mounting: SMD
Collector current: 0.2A
Power dissipation: 0.33W
Collector-emitter voltage: 40V
Frequency: 250MHz
Polarisation: bipolar
auf Bestellung 1570 Stücke:
Lieferzeit 14-21 Tag (e)
385+0.19 EUR
625+0.11 EUR
767+0.093 EUR
847+0.085 EUR
977+0.073 EUR
1109+0.064 EUR
1257+0.057 EUR
Mindestbestellmenge: 385
Im Einkaufswagen  Stück im Wert von  UAH
CY8C4125LTI-M445 CY8C4125LTI-M445 INFINEON TECHNOLOGIES CY8C4125AZI-M443.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; QFN68; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Integrated circuit features: CapSense; LCD controller
Mounting: SMD
Case: QFN68
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 55
Memory: 4kB SRAM; 32kB FLASH
Kind of core: 32-bit
Clock frequency: 24MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY8C4127LTI-M475 CY8C4127LTI-M475 INFINEON TECHNOLOGIES CY8C4125AZI-M443.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; QFN68; 16kBSRAM,128kBFLASH
Type of integrated circuit: PSoC microcontroller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Integrated circuit features: CapSense; LCD controller
Mounting: SMD
Case: QFN68
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 55
Memory: 16kB SRAM; 128kB FLASH
Kind of core: 32-bit
Clock frequency: 24MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY8C4245LTI-M445 CY8C4245LTI-M445 INFINEON TECHNOLOGIES CY8C4245AZI-M443.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; QFN68; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Integrated circuit features: CapSense; LCD controller
Mounting: SMD
Case: QFN68
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 55
Memory: 4kB SRAM; 32kB FLASH
Kind of core: 32-bit
Clock frequency: 48MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY8C4247LTI-M475 CY8C4247LTI-M475 INFINEON TECHNOLOGIES CY8C4245AZI-M443.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; QFN68; 16kBSRAM,128kBFLASH
Type of integrated circuit: PSoC microcontroller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Integrated circuit features: CapSense; LCD controller
Mounting: SMD
Case: QFN68
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 48
Memory: 16kB SRAM; 128kB FLASH
Kind of core: 32-bit
Clock frequency: 48MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY8C4248LTI-L475 CY8C4248LTI-L475 INFINEON TECHNOLOGIES CY8C4246AZI-L423.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; QFN68; 32kBSRAM,256kBFLASH
Type of integrated circuit: PSoC microcontroller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Integrated circuit features: CapSense
Mounting: SMD
Case: QFN68
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 53
Memory: 32kB SRAM; 256kB FLASH
Kind of core: 32-bit
Clock frequency: 48MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CYUSB3304-68LTXC INFINEON TECHNOLOGIES Infineon-CYUSB330x_CYUSB331x_CYUSB332x_HX3_USB_3.0_Hub-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb53f644b8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Development kits - others
Description: IC: interface; SMD; 0÷70°C; QFN68; Kind of ciruit: USB controller
Type of integrated circuit: interface
Interface: I2C
Case: QFN68
Mounting: SMD
Operating temperature: 0...70°C
Kind of integrated circuit: USB controller
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AIKW75N60CTXKSA1 AIKW75N60CTXKSA1 INFINEON TECHNOLOGIES AIKW75N60CT.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 225A
Turn-off time: 365ns
Turn-on time: 69ns
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ITS4200SMEOHUMA1 ITS4200SMEOHUMA1 INFINEON TECHNOLOGIES ITS4200SMEOHUMA1.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223-4
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of integrated circuit: high-side
Technology: Industrial PROFET
Kind of output: N-Channel
Type of integrated circuit: power switch
Case: SOT223-4
On-state resistance: 0.15Ω
Output current: 0.7A
Number of channels: 1
Supply voltage: 11...45V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ITS4200SMEPHUMA1 INFINEON TECHNOLOGIES ITS4200SMEP.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.4A; Ch: 1; N-Channel; SMD; SOT223-4
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of integrated circuit: high-side
Technology: Industrial PROFET
Kind of output: N-Channel
Type of integrated circuit: power switch
Case: SOT223-4
On-state resistance: 0.15Ω
Output current: 1.4A
Number of channels: 1
Supply voltage: 11...45V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ITS4200SMENHUMA1 INFINEON TECHNOLOGIES ITS4200SMEN.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223-4
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of integrated circuit: high-side
Technology: Industrial PROFET
Kind of output: N-Channel
Type of integrated circuit: power switch
Case: SOT223-4
On-state resistance: 0.16Ω
Output current: 0.7A
Number of channels: 1
Supply voltage: 5...34V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CYPD3177-24LQXQ INFINEON TECHNOLOGIES Infineon-EZ-PD_BCR_Datasheet_USB_Type-C_Port_Controller_for_Power_Sinks-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ce9d70ad Category: USB interfaces - integrated circuits
Description: IC: interface; I2C; transceiver; QFN24; 10mA; USB
Operating temperature: -40...105°C
Application: USB
Interface: I2C
Type of integrated circuit: interface
Case: QFN24
Mounting: SMD
Kind of integrated circuit: transceiver
DC supply current: 10mA
Data transfer rate: 1Mbps
auf Bestellung 670 Stücke:
Lieferzeit 14-21 Tag (e)
490+1.82 EUR
Mindestbestellmenge: 490
Im Einkaufswagen  Stück im Wert von  UAH
CYPD3177-24LQXQT INFINEON TECHNOLOGIES Infineon-EZ-PD_BCR_Datasheet_USB_Type-C_Port_Controller_for_Power_Sinks-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ce9d70ad Category: USB interfaces - integrated circuits
Description: IC: interface; I2C; transceiver; QFN24; 10mA; USB
Application: USB
Interface: I2C
Type of integrated circuit: interface
Case: QFN24
Mounting: SMD
Kind of integrated circuit: transceiver
DC supply current: 10mA
Data transfer rate: 1Mbps
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+1.7 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IGZ100N65H5XKSA1 IGZ100N65H5XKSA1 INFINEON TECHNOLOGIES IGZ100N65H5XKSA1-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 101A; 268W; TO247-4; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 101A
Power dissipation: 268W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Manufacturer series: H5
Turn-on time: 40ns
Turn-off time: 485ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EVALPSIR2085TOBO1 INFINEON TECHNOLOGIES Infineon-UG-2021-33_EVAL-PSIR2085-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7c5627e7017c6fe78b1d0879 Category: Integrated circuits - Unclassified
Description: EVALPSIR2085TOBO1
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+207.79 EUR
Im Einkaufswagen  Stück im Wert von  UAH
BSS225H6327FTSA1 BSS225H6327FTSA1 INFINEON TECHNOLOGIES BSS225H6327FTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.09A; 1W; SOT89
Mounting: SMD
Case: SOT89
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.09A
On-state resistance: 45Ω
Power dissipation: 1W
Gate-source voltage: ±20V
Kind of channel: enhancement
auf Bestellung 262 Stücke:
Lieferzeit 14-21 Tag (e)
105+0.69 EUR
247+0.29 EUR
262+0.27 EUR
Mindestbestellmenge: 105
Im Einkaufswagen  Stück im Wert von  UAH
IPD90N03S4L02ATMA1 IPD90N03S4L02ATMA1 INFINEON TECHNOLOGIES IPD90N03S4L02.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 30V; 90A; 136W
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 90A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 110nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR3806TRPBF IRFR3806TRPBF INFINEON TECHNOLOGIES irfr3806pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 43A; 71W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 43A
Power dissipation: 71W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 672 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.63 EUR
64+1.12 EUR
72+1 EUR
91+0.79 EUR
100+0.72 EUR
250+0.62 EUR
500+0.56 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
IRF1104PBF IRF1104PBF INFINEON TECHNOLOGIES irf1104.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
18+3.98 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
FF8MR12W1M1HB70BPSA1 INFINEON TECHNOLOGIES Infineon-FF8MR12W1M1H_B70-DataSheet-v00_30-EN.pdf?fileId=8ac78c8c8b6555fe018b728bcf5a7c92 Category: THT N channel transistors
Description: Transistor: N-MOSFET; 1.2kV; 100A; module,semiconductor
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 100A
Gate-source voltage: 20V
On-state resistance: 8.1mΩ
Kind of channel: enhancement
Version: module; semiconductor
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
24+150.41 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
FF17MR12W1M1HB70BPSA1 INFINEON TECHNOLOGIES Infineon-FF17MR12W1M1H_B70-DataSheet-v00_20-EN.pdf?fileId=8ac78c8c8779172a0188201359d2742d Category: Transistor modules MOSFET
Description: Module; 1.2kV; 50A; AG-EASY1B; SiC
Drain-source voltage: 1.2kV
Drain current: 50A
On-state resistance: 16.2mΩ
Technology: SiC
Type of semiconductor module: MOSFET transistor
Case: AG-EASY1B
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
24+99.26 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
BAT1704E6327HTSA1 BAT1704E6327HTSA1 INFINEON TECHNOLOGIES BAT1704E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 4V; 0.13A; 150mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 4V
Load current: 0.13A
Semiconductor structure: double series
Max. forward voltage: 0.6V
Power dissipation: 0.15W
auf Bestellung 434 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
417+0.17 EUR
Mindestbestellmenge: 358
Im Einkaufswagen  Stück im Wert von  UAH
IPP17N25S3100AKSA1 IPP17N25S3100AKSA1 INFINEON TECHNOLOGIES Infineon-IPP_B17N25S3_100-DS-v01_01-EN.pdf?fileId=db3a30433b92f0e8013b937c398a014b Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 250V; 13.3A; Idm: 68A
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 107W
Case: PG-TO220-3
Mounting: THT
Technology: OptiMOS™ T
On-state resistance: 0.1Ω
Drain current: 13.3A
Gate-source voltage: ±20V
Pulsed drain current: 68A
Drain-source voltage: 250V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPTC019N10NM5ATMA1 INFINEON TECHNOLOGIES Infineon-IPTC019N10NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177a4fde687225b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 279A; Idm: 31A; 300W; PG-HDSOP-16
Case: PG-HDSOP-16
Mounting: SMD
Polarisation: N
Gate charge: 160nC
On-state resistance: 1.9mΩ
Kind of channel: enhancement
Power dissipation: 300W
Drain current: 279A
Gate-source voltage: 20V
Pulsed drain current: 31A
Drain-source voltage: 100V
Type of transistor: N-MOSFET
auf Bestellung 1800 Stücke:
Lieferzeit 14-21 Tag (e)
1800+3.33 EUR
Mindestbestellmenge: 1800
Im Einkaufswagen  Stück im Wert von  UAH
IPA65R190E6XKSA1 IPA65R190E6XKSA1 INFINEON TECHNOLOGIES IPA65R190E6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 480 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.88 EUR
26+2.79 EUR
100+2.2 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
IPI65R190C6XKSA1 IPI65R190C6XKSA1 INFINEON TECHNOLOGIES IPI65R190C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA65R190C7XKSA1 IPA65R190C7XKSA1 INFINEON TECHNOLOGIES IPA65R190C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA65R190CFDXKSA1 IPA65R190CFDXKSA1 INFINEON TECHNOLOGIES IPA65R190CFD-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW65R190CFDFKSA1 IPW65R190CFDFKSA1 INFINEON TECHNOLOGIES IPW65R190CFD-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R190CFDAATMA1 INFINEON TECHNOLOGIES Infineon-IPX65R190CFDA-DS-v02_00-en.pdf?fileId=db3a3043399628450139afa2346920a1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: D2PAK; TO263
On-state resistance: 171mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 68nC
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R190C7ATMA1 IPB65R190C7ATMA1 INFINEON TECHNOLOGIES IPB65R190C7-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; 72W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 72W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R190CFDATMA1 IPB65R190CFDATMA1 INFINEON TECHNOLOGIES IPB65R190CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD65R190C7ATMA1 IPD65R190C7ATMA1 INFINEON TECHNOLOGIES IPD65R190C7-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.2A; 28W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.2A
On-state resistance: 0.19Ω
Gate-source voltage: ±20V
Power dissipation: 28W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPI65R190CFDXKSA1 IPI65R190CFDXKSA1 INFINEON TECHNOLOGIES IPI65R190CFD-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPL65R190E6AUMA1 IPL65R190E6AUMA1 INFINEON TECHNOLOGIES IPL65R190E6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R170CFD7 IPW60R170CFD7.pdf
IPW60R170CFD7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 75W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 75W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.325Ω
Mounting: THT
Gate charge: 28nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R199CPXKSA1 IPP60R199CP-DTE.pdf
IPP60R199CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 139W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 139W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.76 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IRFML8244TRPBF irfml8244pbf.pdf
IRFML8244TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 5.8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 5.8A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 5.4nC
Kind of channel: enhancement
auf Bestellung 3558 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
338+0.21 EUR
371+0.19 EUR
527+0.14 EUR
650+0.11 EUR
1000+0.1 EUR
3000+0.09 EUR
Mindestbestellmenge: 295
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R385CPXKSA1 IPP60R385CP-DTE.pdf
IPP60R385CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO220-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.385Ω
Drain current: 9A
Gate-source voltage: ±20V
Power dissipation: 83W
Drain-source voltage: 600V
Technology: CoolMOS™ CP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO220-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB60R385CPATMA1 IPB60R385CP-DTE.pdf
IPB60R385CPATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO263-3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 0.385Ω
Drain current: 9A
Gate-source voltage: ±20V
Power dissipation: 83W
Drain-source voltage: 600V
Technology: CoolMOS™ CP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO263-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R385CPATMA1 Infineon-IPD60R385CP-DS-v02_04-EN.pdf?fileId=db3a30432313ff5e012385595fd16763
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; Idm: 27A; 83W; PG-TO252
Mounting: SMD
Polarisation: unipolar
On-state resistance: 0.385Ω
Drain current: 5.7A
Gate-source voltage: ±20V
Pulsed drain current: 27A
Power dissipation: 83W
Drain-source voltage: 600V
Technology: CoolMOS™ CP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO252
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPL60R385CPAUMA1 IPL60R385CP-DTE.pdf
IPL60R385CPAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-VSON-4
Mounting: SMD
Polarisation: unipolar
On-state resistance: 0.385Ω
Drain current: 9A
Gate-source voltage: ±20V
Power dissipation: 83W
Drain-source voltage: 600V
Technology: CoolMOS™ CP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-VSON-4
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA60R125C6XKSA1 IPA60R125C6-DTE.pdf
IPA60R125C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.53 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IPA60R125CPXKSA1 IPA60R125CP-DTE.pdf
IPA60R125CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 35W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.29 EUR
12+6.28 EUR
15+5.05 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IPA60R125P6XKSA1 IPA60R125P6-DTE.pdf
IPA60R125P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1ED020I12B2XUMA1 infineon-1ed020i12-b2-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; -2÷2A; Ch: 1
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Mounting: SMD
Case: PG-DSO-16-15
Kind of package: reel; tape
Protection: undervoltage UVP
Output current: -2...2A
Supply voltage: 0...28V; 4.5...5.5V
Number of channels: 1
Voltage class: 0.6/1.2kV
Integrated circuit features: active Miller clamp; galvanically isolated
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL512T10TFI010 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
S29GL512T10TFI010
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; TSOP56; parallel
Operating temperature: -40...85°C
Memory: 512Mb FLASH
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GT10TFI010 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; TSOP56; parallel
Operating temperature: -40...85°C
Memory: 1Gb FLASH
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GT10TFA010 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 100ns; TSOP56; parallel
Operating temperature: -40...85°C
Memory: 1Gb FLASH
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Application: automotive
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GT10TFI013 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 100ns; TSOP56; parallel
Operating temperature: -40...85°C
Memory: 1Gb FLASH
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GT10TFI020 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 100ns; TSOP56; parallel
Operating temperature: -40...85°C
Memory: 1Gb FLASH
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GT10TFI030 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 100ns; TSOP56; parallel
Operating temperature: -40...85°C
Memory: 1Gb FLASH
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL512T10TFA010 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56; in-tray
Operating temperature: -40...85°C
Memory: 512Mb FLASH
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Application: automotive
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL512T10TFI013 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56
Operating temperature: -40...85°C
Memory: 512Mb FLASH
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL512T10TFI020 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56; in-tray
Operating temperature: -40...85°C
Memory: 512Mb FLASH
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL512T10TFI023 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56
Operating temperature: -40...85°C
Memory: 512Mb FLASH
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL512T10TFI030 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56; in-tray
Operating temperature: -40...85°C
Memory: 512Mb FLASH
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL512T10TFI040 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56; in-tray
Operating temperature: -40...85°C
Memory: 512Mb FLASH
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL512T10TFI043 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; TSOP56
Operating temperature: -40...85°C
Memory: 512Mb FLASH
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Mounting: SMD
Interface: CFI; parallel
Case: TSOP56
Access time: 100ns
Operating voltage: 2.7...3.6V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS116E6327HTSA1 BAS116E6327.pdf
BAS116E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 0.6us; SOT23; Ufmax: 1.25V; 370mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 0.6µs
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.37W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
auf Bestellung 5643 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
410+0.17 EUR
468+0.15 EUR
569+0.13 EUR
771+0.093 EUR
1107+0.065 EUR
1320+0.054 EUR
3000+0.047 EUR
Mindestbestellmenge: 334
Im Einkaufswagen  Stück im Wert von  UAH
SMBT3906E6327HTSA1 SMBT3906E6327.pdf
SMBT3906E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.33W; SOT23
Case: SOT23
Type of transistor: PNP
Mounting: SMD
Collector current: 0.2A
Power dissipation: 0.33W
Collector-emitter voltage: 40V
Frequency: 250MHz
Polarisation: bipolar
auf Bestellung 1570 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
625+0.11 EUR
767+0.093 EUR
847+0.085 EUR
977+0.073 EUR
1109+0.064 EUR
1257+0.057 EUR
Mindestbestellmenge: 385
Im Einkaufswagen  Stück im Wert von  UAH
CY8C4125LTI-M445 CY8C4125AZI-M443.pdf
CY8C4125LTI-M445
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; QFN68; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Integrated circuit features: CapSense; LCD controller
Mounting: SMD
Case: QFN68
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 55
Memory: 4kB SRAM; 32kB FLASH
Kind of core: 32-bit
Clock frequency: 24MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY8C4127LTI-M475 CY8C4125AZI-M443.pdf
CY8C4127LTI-M475
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; QFN68; 16kBSRAM,128kBFLASH
Type of integrated circuit: PSoC microcontroller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Integrated circuit features: CapSense; LCD controller
Mounting: SMD
Case: QFN68
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 55
Memory: 16kB SRAM; 128kB FLASH
Kind of core: 32-bit
Clock frequency: 24MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY8C4245LTI-M445 CY8C4245AZI-M443.pdf
CY8C4245LTI-M445
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; QFN68; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Integrated circuit features: CapSense; LCD controller
Mounting: SMD
Case: QFN68
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 55
Memory: 4kB SRAM; 32kB FLASH
Kind of core: 32-bit
Clock frequency: 48MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY8C4247LTI-M475 CY8C4245AZI-M443.pdf
CY8C4247LTI-M475
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; QFN68; 16kBSRAM,128kBFLASH
Type of integrated circuit: PSoC microcontroller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Integrated circuit features: CapSense; LCD controller
Mounting: SMD
Case: QFN68
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 48
Memory: 16kB SRAM; 128kB FLASH
Kind of core: 32-bit
Clock frequency: 48MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY8C4248LTI-L475 CY8C4246AZI-L423.pdf
CY8C4248LTI-L475
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; QFN68; 32kBSRAM,256kBFLASH
Type of integrated circuit: PSoC microcontroller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Integrated circuit features: CapSense
Mounting: SMD
Case: QFN68
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 53
Memory: 32kB SRAM; 256kB FLASH
Kind of core: 32-bit
Clock frequency: 48MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CYUSB3304-68LTXC Infineon-CYUSB330x_CYUSB331x_CYUSB332x_HX3_USB_3.0_Hub-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb53f644b8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: IC: interface; SMD; 0÷70°C; QFN68; Kind of ciruit: USB controller
Type of integrated circuit: interface
Interface: I2C
Case: QFN68
Mounting: SMD
Operating temperature: 0...70°C
Kind of integrated circuit: USB controller
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AIKW75N60CTXKSA1 AIKW75N60CT.pdf
AIKW75N60CTXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 225A
Turn-off time: 365ns
Turn-on time: 69ns
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ITS4200SMEOHUMA1 ITS4200SMEOHUMA1.pdf
ITS4200SMEOHUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223-4
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of integrated circuit: high-side
Technology: Industrial PROFET
Kind of output: N-Channel
Type of integrated circuit: power switch
Case: SOT223-4
On-state resistance: 0.15Ω
Output current: 0.7A
Number of channels: 1
Supply voltage: 11...45V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ITS4200SMEPHUMA1 ITS4200SMEP.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.4A; Ch: 1; N-Channel; SMD; SOT223-4
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of integrated circuit: high-side
Technology: Industrial PROFET
Kind of output: N-Channel
Type of integrated circuit: power switch
Case: SOT223-4
On-state resistance: 0.15Ω
Output current: 1.4A
Number of channels: 1
Supply voltage: 11...45V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ITS4200SMENHUMA1 ITS4200SMEN.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223-4
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of integrated circuit: high-side
Technology: Industrial PROFET
Kind of output: N-Channel
Type of integrated circuit: power switch
Case: SOT223-4
On-state resistance: 0.16Ω
Output current: 0.7A
Number of channels: 1
Supply voltage: 5...34V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CYPD3177-24LQXQ Infineon-EZ-PD_BCR_Datasheet_USB_Type-C_Port_Controller_for_Power_Sinks-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ce9d70ad
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: interface; I2C; transceiver; QFN24; 10mA; USB
Operating temperature: -40...105°C
Application: USB
Interface: I2C
Type of integrated circuit: interface
Case: QFN24
Mounting: SMD
Kind of integrated circuit: transceiver
DC supply current: 10mA
Data transfer rate: 1Mbps
auf Bestellung 670 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
490+1.82 EUR
Mindestbestellmenge: 490
Im Einkaufswagen  Stück im Wert von  UAH
CYPD3177-24LQXQT Infineon-EZ-PD_BCR_Datasheet_USB_Type-C_Port_Controller_for_Power_Sinks-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ce9d70ad
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: interface; I2C; transceiver; QFN24; 10mA; USB
Application: USB
Interface: I2C
Type of integrated circuit: interface
Case: QFN24
Mounting: SMD
Kind of integrated circuit: transceiver
DC supply current: 10mA
Data transfer rate: 1Mbps
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.7 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IGZ100N65H5XKSA1 IGZ100N65H5XKSA1-DTE.pdf
IGZ100N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 101A; 268W; TO247-4; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 101A
Power dissipation: 268W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Manufacturer series: H5
Turn-on time: 40ns
Turn-off time: 485ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EVALPSIR2085TOBO1 Infineon-UG-2021-33_EVAL-PSIR2085-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7c5627e7017c6fe78b1d0879
Hersteller: INFINEON TECHNOLOGIES
Category: Integrated circuits - Unclassified
Description: EVALPSIR2085TOBO1
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+207.79 EUR
Im Einkaufswagen  Stück im Wert von  UAH
BSS225H6327FTSA1 BSS225H6327FTSA1.pdf
BSS225H6327FTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.09A; 1W; SOT89
Mounting: SMD
Case: SOT89
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.09A
On-state resistance: 45Ω
Power dissipation: 1W
Gate-source voltage: ±20V
Kind of channel: enhancement
auf Bestellung 262 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
105+0.69 EUR
247+0.29 EUR
262+0.27 EUR
Mindestbestellmenge: 105
Im Einkaufswagen  Stück im Wert von  UAH
IPD90N03S4L02ATMA1 IPD90N03S4L02.pdf
IPD90N03S4L02ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 30V; 90A; 136W
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 90A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 110nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR3806TRPBF irfr3806pbf.pdf
IRFR3806TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 43A; 71W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 43A
Power dissipation: 71W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 672 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.63 EUR
64+1.12 EUR
72+1 EUR
91+0.79 EUR
100+0.72 EUR
250+0.62 EUR
500+0.56 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
IRF1104PBF irf1104.pdf
IRF1104PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+3.98 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
FF8MR12W1M1HB70BPSA1 Infineon-FF8MR12W1M1H_B70-DataSheet-v00_30-EN.pdf?fileId=8ac78c8c8b6555fe018b728bcf5a7c92
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 1.2kV; 100A; module,semiconductor
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 100A
Gate-source voltage: 20V
On-state resistance: 8.1mΩ
Kind of channel: enhancement
Version: module; semiconductor
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+150.41 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
FF17MR12W1M1HB70BPSA1 Infineon-FF17MR12W1M1H_B70-DataSheet-v00_20-EN.pdf?fileId=8ac78c8c8779172a0188201359d2742d
Hersteller: INFINEON TECHNOLOGIES
Category: Transistor modules MOSFET
Description: Module; 1.2kV; 50A; AG-EASY1B; SiC
Drain-source voltage: 1.2kV
Drain current: 50A
On-state resistance: 16.2mΩ
Technology: SiC
Type of semiconductor module: MOSFET transistor
Case: AG-EASY1B
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+99.26 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
BAT1704E6327HTSA1 BAT1704E6327HTSA1.pdf
BAT1704E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 4V; 0.13A; 150mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 4V
Load current: 0.13A
Semiconductor structure: double series
Max. forward voltage: 0.6V
Power dissipation: 0.15W
auf Bestellung 434 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
417+0.17 EUR
Mindestbestellmenge: 358
Im Einkaufswagen  Stück im Wert von  UAH
IPP17N25S3100AKSA1 Infineon-IPP_B17N25S3_100-DS-v01_01-EN.pdf?fileId=db3a30433b92f0e8013b937c398a014b
IPP17N25S3100AKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 250V; 13.3A; Idm: 68A
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 107W
Case: PG-TO220-3
Mounting: THT
Technology: OptiMOS™ T
On-state resistance: 0.1Ω
Drain current: 13.3A
Gate-source voltage: ±20V
Pulsed drain current: 68A
Drain-source voltage: 250V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPTC019N10NM5ATMA1 Infineon-IPTC019N10NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177a4fde687225b
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 279A; Idm: 31A; 300W; PG-HDSOP-16
Case: PG-HDSOP-16
Mounting: SMD
Polarisation: N
Gate charge: 160nC
On-state resistance: 1.9mΩ
Kind of channel: enhancement
Power dissipation: 300W
Drain current: 279A
Gate-source voltage: 20V
Pulsed drain current: 31A
Drain-source voltage: 100V
Type of transistor: N-MOSFET
auf Bestellung 1800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1800+3.33 EUR
Mindestbestellmenge: 1800
Im Einkaufswagen  Stück im Wert von  UAH
IPA65R190E6XKSA1 IPA65R190E6-DTE.pdf
IPA65R190E6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 480 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.88 EUR
26+2.79 EUR
100+2.2 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
IPI65R190C6XKSA1 IPI65R190C6-DTE.pdf
IPI65R190C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA65R190C7XKSA1 IPA65R190C7-DTE.pdf
IPA65R190C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA65R190CFDXKSA1 IPA65R190CFD-DTE.pdf
IPA65R190CFDXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW65R190CFDFKSA1 IPW65R190CFD-DTE.pdf
IPW65R190CFDFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R190CFDAATMA1 Infineon-IPX65R190CFDA-DS-v02_00-en.pdf?fileId=db3a3043399628450139afa2346920a1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: D2PAK; TO263
On-state resistance: 171mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 68nC
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R190C7ATMA1 IPB65R190C7-DTE.pdf
IPB65R190C7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; 72W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 72W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R190CFDATMA1 IPB65R190CFD-DTE.pdf
IPB65R190CFDATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD65R190C7ATMA1 IPD65R190C7-DTE.pdf
IPD65R190C7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.2A; 28W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.2A
On-state resistance: 0.19Ω
Gate-source voltage: ±20V
Power dissipation: 28W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPI65R190CFDXKSA1 IPI65R190CFD-DTE.pdf
IPI65R190CFDXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPL65R190E6AUMA1 IPL65R190E6-DTE.pdf
IPL65R190E6AUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 197 394 591 788 985 1182 1379 1576 1773 1962 1963 1964 1965 1966 1967 1968 1969 1970 1971 1972 1977  [ Nächste Seite >> ]