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BFP193E6327 BFP193E6327 INFINEON TECHNOLOGIES BFP193E6327-dte.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 80mA; 0.58W; SOT143
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 80mA
Power dissipation: 0.58W
Case: SOT143
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
Current gain: 70...140
auf Bestellung 1598 Stücke:
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193+0.37 EUR
298+0.24 EUR
391+0.18 EUR
439+0.16 EUR
500+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 193
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IRFB4410ZPBF IRFB4410ZPBF INFINEON TECHNOLOGIES irfb4410zpbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 97A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 97A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1641 Stücke:
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35+2.07 EUR
40+1.82 EUR
52+1.39 EUR
58+1.24 EUR
66+1.09 EUR
100+0.97 EUR
200+0.89 EUR
500+0.8 EUR
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IRFB4610PBF IRFB4610PBF INFINEON TECHNOLOGIES irfs4610.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 190W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 73A
Power dissipation: 190W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 830 Stücke:
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28+2.63 EUR
29+2.52 EUR
32+2.26 EUR
34+2.16 EUR
50+2 EUR
100+1.89 EUR
200+1.77 EUR
500+1.63 EUR
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IRFB38N20DPBF IRFB38N20DPBF INFINEON TECHNOLOGIES irfs38n20d.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 44A; 320W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 44A
Power dissipation: 320W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 54mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 77 Stücke:
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24+3.1 EUR
29+2.5 EUR
33+2.23 EUR
50+1.73 EUR
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IRFB52N15DPBF IRFB52N15DPBF INFINEON TECHNOLOGIES irfs52n15d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 190 Stücke:
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29+2.53 EUR
35+2.07 EUR
39+1.87 EUR
44+1.63 EUR
50+1.52 EUR
100+1.46 EUR
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IRFB5620PBF IRFB5620PBF INFINEON TECHNOLOGIES irfb5620pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 25A; 144W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 25A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 72.5mΩ
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 124 Stücke:
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36+1.99 EUR
55+1.32 EUR
62+1.16 EUR
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IRFB3307PBF IRFB3307PBF INFINEON TECHNOLOGIES irfs3307.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 250W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 130A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1270 Stücke:
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27+2.7 EUR
28+2.56 EUR
30+2.43 EUR
36+2 EUR
42+1.73 EUR
50+1.43 EUR
100+1.26 EUR
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IRFB7730PBF IRFB7730PBF INFINEON TECHNOLOGIES IRFB7730PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 246A; 375W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 246A
Power dissipation: 375W
Case: TO220AB
On-state resistance: 2.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 129 Stücke:
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25+2.87 EUR
34+2.16 EUR
50+1.94 EUR
100+1.79 EUR
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IRFB4332PbF IRFB4332PbF INFINEON TECHNOLOGIES irfb4332pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 390W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 99nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 124 Stücke:
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26+2.82 EUR
29+2.47 EUR
33+2.23 EUR
50+2.14 EUR
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IRFB7534PBF IRFB7534PBF INFINEON TECHNOLOGIES irfs7534pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 294W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 294W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 186nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
auf Bestellung 660 Stücke:
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48+1.52 EUR
57+1.26 EUR
66+1.09 EUR
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IRFB7537PBF IRFB7537PBF INFINEON TECHNOLOGIES irfs7537pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 173A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 173A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
auf Bestellung 1059 Stücke:
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27+2.72 EUR
38+1.92 EUR
53+1.37 EUR
74+0.97 EUR
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IRFB3307ZPBF IRFB3307ZPBF INFINEON TECHNOLOGIES irfs3307zpbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 236 Stücke:
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27+2.7 EUR
47+1.53 EUR
54+1.34 EUR
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IRFB4410PBF IRFB4410PBF INFINEON TECHNOLOGIES irfs4410.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 96A; 250W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 96A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 972 Stücke:
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30+2.45 EUR
36+2.02 EUR
55+1.32 EUR
100+1.04 EUR
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IRFB5615PBF IRFB5615PBF INFINEON TECHNOLOGIES irfb5615pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 35A; 144W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 35A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 242 Stücke:
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38+1.93 EUR
48+1.52 EUR
54+1.33 EUR
64+1.13 EUR
72+1 EUR
100+0.94 EUR
Mindestbestellmenge: 38
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IPB033N10N5LF IPB033N10N5LF INFINEON TECHNOLOGIES IPB033N10N5LF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 108A; 179W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 108A
Case: PG-TO263-3
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 179W
Technology: OptiMOS™ 5
On-state resistance: 3.3mΩ
Produkt ist nicht verfügbar
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S25FS064SAGNFB033 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; LGA8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: LGA8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
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TT285N16KOFHPSA2 INFINEON TECHNOLOGIES Infineon-TT285N16KOF-DS-v03_04-EN.pdf?fileId=db3a304412b407950112b42f7b4d4bc5 Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 285A; BG-PB50AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 285A
Case: BG-PB50AT-1
Max. forward voltage: 1.28V
Max. forward impulse current: 10kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IPA60R190P6XKSA1 IPA60R190P6XKSA1 INFINEON TECHNOLOGIES IPA60R190P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1042 Stücke:
Lieferzeit 14-21 Tag (e)
30+2.4 EUR
36+2.03 EUR
50+1.52 EUR
100+1.33 EUR
250+1.19 EUR
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BSS670S2LH6327XTSA1 BSS670S2LH6327XTSA1 INFINEON TECHNOLOGIES BSS670S2LH6327XTSA.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 0.54A; 0.36W; SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Power dissipation: 0.36W
Drain current: 0.54A
On-state resistance: 0.65Ω
Gate-source voltage: ±20V
Drain-source voltage: 55V
auf Bestellung 6103 Stücke:
Lieferzeit 14-21 Tag (e)
239+0.3 EUR
332+0.22 EUR
486+0.15 EUR
573+0.12 EUR
807+0.089 EUR
1000+0.077 EUR
3000+0.063 EUR
6000+0.062 EUR
Mindestbestellmenge: 239
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BAT6202VH6327XTSA1 BAT6202VH6327XTSA1 INFINEON TECHNOLOGIES BAT62E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 40V; 20mA; 100mW
Mounting: SMD
Case: SC79
Type of diode: Schottky switching
Semiconductor structure: single diode
Load current: 20mA
Power dissipation: 0.1W
Max. forward voltage: 1V
Max. off-state voltage: 40V
auf Bestellung 2596 Stücke:
Lieferzeit 14-21 Tag (e)
143+0.5 EUR
210+0.34 EUR
281+0.25 EUR
317+0.23 EUR
371+0.19 EUR
500+0.17 EUR
1000+0.14 EUR
Mindestbestellmenge: 143
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BAT62E6327HTSA1 BAT62E6327HTSA1 INFINEON TECHNOLOGIES BAT62E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143; SMD; 40V; 20mA; 100mW
Type of diode: Schottky switching
Case: SOT143
Mounting: SMD
Max. off-state voltage: 40V
Load current: 20mA
Semiconductor structure: double independent
Max. forward voltage: 1V
Power dissipation: 0.1W
Produkt ist nicht verfügbar
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FZ1000R33HE3BPSA1 INFINEON TECHNOLOGIES FZ1000R33HE3.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 3.3kV; Ic: 1kA; screw
Case: AG-IHVB130-3
Semiconductor structure: transistor/transistor
Technology: TRENCHSTOP™
Type of semiconductor module: IGBT
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 1kA
Max. off-state voltage: 3.3kV
Pulsed collector current: 2kA
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FF450R33T3E3B5BPSA1 INFINEON TECHNOLOGIES Infineon-FF450R33T3E3_B5-DS-v03_00-EN.pdf?fileId=5546d46267c74c9a01683cd2886064d9 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Topology: IGBT half-bridge
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Technology: XHP™3
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Max. off-state voltage: 3.3kV
Case: AG-XHP100-6
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FZ825R33HE4DBPSA1 INFINEON TECHNOLOGIES Infineon-FZ825R33HE4D-DataSheet-v01_10-EN.pdf?fileId=5546d46278d64ffd0178f97d4dd50584 Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Topology: IGBT x2
Semiconductor structure: common emitter; transistor/transistor
Type of semiconductor module: IGBT
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 825A
Pulsed collector current: 1.65kA
Max. off-state voltage: 3.3kV
Case: AG-IHVB130
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FZ1400R33HE4BPSA1 INFINEON TECHNOLOGIES Infineon-Bodos_Power_Systems_Modules%20for_traction_converters-Article-v01_00-EN.pdf?fileId=5546d46269e1c019016a96de3a714ec0 Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Topology: IGBT x2
Semiconductor structure: common emitter; transistor/transistor
Type of semiconductor module: IGBT
Technology: TRENCHSTOP™
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 1.4kA
Pulsed collector current: 2.8kA
Max. off-state voltage: 3.3kV
Case: AG-IHVB130-3
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FZ2000R33HE4BOSA1 INFINEON TECHNOLOGIES Infineon-FZ2000R33HE4-DataSheet-v02_01-EN.pdf?fileId=5546d4626eab8fbf016ed15a9df22af8 Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x3
Topology: IGBT x3
Semiconductor structure: common emitter; transistor/transistor
Type of semiconductor module: IGBT
Technology: TRENCHSTOP™
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 2kA
Pulsed collector current: 4kA
Max. off-state voltage: 3.3kV
Case: AG-IHVB190-3
Produkt ist nicht verfügbar
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FD1000R33HE3KBPSA1 INFINEON TECHNOLOGIES FD1000R33HE3K.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck-boost chopper; Urmax: 3.3kV
Power dissipation: 11.5kW
Case: AG-IHVB190
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
Application: Inverter
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 1kA
Max. off-state voltage: 3.3kV
Pulsed collector current: 2kA
Topology: buck-boost chopper
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IRF1018EPBF IRF1018EPBF INFINEON TECHNOLOGIES irf1018epbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; 110W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 79A
Power dissipation: 110W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
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BGA524N6E6327XTSA1 INFINEON TECHNOLOGIES BGA524N6.pdf Category: SMD operational amplifiers
Description: IC: RF amplifier; 1550÷1615MHz; Ch: 1; 1.5÷3.3VDC; TSNP6; reel,tape
Type of integrated circuit: RF amplifier
Bandwidth: 1550...1615MHz
Number of channels: 1
Mounting: SMT
Voltage supply range: 1.5...3.3V DC
Case: TSNP6
Operating temperature: -40...85°C
Integrated circuit features: low noise
Kind of package: reel; tape
Application: global navigation satellite systems (GPS)
Produkt ist nicht verfügbar
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BTS70402EPAXUMA1 INFINEON TECHNOLOGIES Infineon-BTS7040-2EPA-DS-v01_00-EN.pdf?fileId=5546d4625e763904015e9412cf6e2dbb Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.5A; Ch: 2; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3.5A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: PG-TSDSO-14
On-state resistance: 36mΩ
Kind of package: reel; tape
Supply voltage: 4.1...28V DC
Technology: PROFET™+2
Operating temperature: -40...150°C
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BTS70401EPAXUMA1 INFINEON TECHNOLOGIES BTS70401EPA.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4.5A; Ch: 1; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 4.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TSDSO-14
On-state resistance: 36mΩ
Kind of package: reel; tape
Supply voltage: 4.1...28V DC
Technology: PROFET™+2
Operating temperature: -40...150°C
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BTS70802EPAXUMA1 INFINEON TECHNOLOGIES Infineon-BTS7080-2EPA-DS-v01_00-EN.pdf?fileId=5546d4625e763904015e941bf21e2dbe Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 2; N-Channel; SMD; PG-TSDSO-14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: PG-TSDSO-14
On-state resistance: 39.6mΩ
Kind of package: reel; tape
Supply voltage: 4.1...28V DC
Technology: PROFET™+2
Operating temperature: -40...150°C
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CY8C28452-24PVXI CY8C28452-24PVXI INFINEON TECHNOLOGIES CY8C28243-24PVXI.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP28; 1kBSRAM,16kBFLASH
Interface: GPIO; I2C; SPI; UART
Mounting: SMD
Case: SSOP28
Operating temperature: -40...85°C
Supply voltage: 3...5.25V DC
Number of inputs/outputs: 24
Memory: 1kB SRAM; 16kB FLASH
Clock frequency: 24MHz
Kind of core: 8-bit
Type of integrated circuit: PSoC microcontroller
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IRL40SC209 INFINEON TECHNOLOGIES Infineon-IRL40SC209-DS-v02_00-EN.pdf?fileId=5546d462557e6e890155a1413329602d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 478A; 375W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 478A
Power dissipation: 375W
Case: D2PAK-7
On-state resistance: 600µΩ
Mounting: SMD
Gate charge: 267nC
Kind of channel: enhancement
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ICE3BR4765JGXUMA1 ICE3BR4765JGXUMA1 INFINEON TECHNOLOGIES ICE3BR4765JG.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 2.32A; 65kHz; Ch: 1; PG-DSO-12; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 65kHz
Number of channels: 1
Case: PG-DSO-12
Mounting: SMD
Operating temperature: -40...150°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...80%
Power: 24/16.5W
Application: SMPS
Operating voltage: 10.5...25V DC
Output current: 2.32A
auf Bestellung 2537 Stücke:
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42+1.73 EUR
45+1.6 EUR
50+1.46 EUR
100+1.36 EUR
500+1.34 EUR
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BSC340N08NS3GATMA1 BSC340N08NS3GATMA1 INFINEON TECHNOLOGIES BSC340N08NS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 23A; 32W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 23A
Power dissipation: 32W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 5569 Stücke:
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79+0.92 EUR
108+0.67 EUR
144+0.5 EUR
250+0.45 EUR
500+0.42 EUR
1000+0.38 EUR
2000+0.35 EUR
2500+0.34 EUR
5000+0.31 EUR
Mindestbestellmenge: 79
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BTS3800SL BTS3800SL INFINEON TECHNOLOGIES BTS3800SL.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.35A; Ch: 1; N-Channel; SMD; PG-SCT595
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 0.35A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-SCT595
On-state resistance: 0.8Ω
Technology: HITFET®
Operating temperature: -40...150°C
Turn-on time: 3µs
Turn-off time: 3µs
auf Bestellung 684 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.79 EUR
67+1.08 EUR
80+0.9 EUR
102+0.7 EUR
250+0.6 EUR
500+0.54 EUR
Mindestbestellmenge: 40
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IPD30N03S4L09ATMA1 IPD30N03S4L09ATMA1 INFINEON TECHNOLOGIES IPD30N03S4L09.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 30V; 30A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhancement
Technology: OptiMOS™ T2
Produkt ist nicht verfügbar
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IPD30N03S4L14ATMA1 INFINEON TECHNOLOGIES Infineon-IPD30N03S4L_14-DS-v02_01-en.pdf?folderId=db3a304412b407950112b426f7da3b27&fileId=db3a304412b407950112b426f9b13b2c&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 31W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Power dissipation: 31W
Case: DPAK; TO252
On-state resistance: 11.2mΩ
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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BSZ130N03LSGATMA1 BSZ130N03LSGATMA1 INFINEON TECHNOLOGIES BSZ130N03LSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; 25W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 28A
Power dissipation: 25W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSC030N03LSGATMA1 BSC030N03LSGATMA1 INFINEON TECHNOLOGIES BSC030N03LSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 98A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 98A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSC030N03MSGATMA1 BSC030N03MSGATMA1 INFINEON TECHNOLOGIES BSC030N03MSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSZ130N03MSGATMA1 BSZ130N03MSGATMA1 INFINEON TECHNOLOGIES BSZ130N03MSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 31A; 25W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 31A
Power dissipation: 25W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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IPD30N03S2L20ATMA1 INFINEON TECHNOLOGIES Infineon-IPD30N03S2L_20-DS-v01_00-en.pdf?folderId=db3a304412b407950112b426f7da3b27&fileId=db3a304412b407950112b4270c9e3b6a&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 30V; 30A; Idm: 30A; 60W; DPAK; ESD
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 30V
Drain current: 30A
Pulsed drain current: 30A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 19nC
Kind of channel: enhancement
Application: automotive industry
Technology: MOSFET
Version: ESD
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.56 EUR
Mindestbestellmenge: 2500
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CY8C21123-24SXI CY8C21123-24SXI INFINEON TECHNOLOGIES CY8C21123-24SXI-DTE.pdf description Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SO8; 256BSRAM,4kBFLASH
Interface: I2C; SPI; UART
Clock frequency: 24MHz
Type of integrated circuit: PSoC microcontroller
Case: SO8
Mounting: SMD
Supply voltage: 2.4...5.25V DC
Number of inputs/outputs: 6
Memory: 256B SRAM; 4kB FLASH
Kind of core: 8-bit
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CY8C24123A-24SXI CY8C24123A-24SXI INFINEON TECHNOLOGIES Infineon-CY8C24123A_CY8C24223A_CY8C24423A_PSoC_Programmable_System-on-Chip-DataSheet-v24_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec6aaf93d0f Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SO8; 256BSRAM,4kBFLASH
Interface: GPIO; I2C; SPI; UART
Clock frequency: 24MHz
Integrated circuit features: watchdog
Type of integrated circuit: PSoC microcontroller
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3...5.25V DC
Number of inputs/outputs: 6
Memory: 256B SRAM; 4kB FLASH
Kind of core: 8-bit
Produkt ist nicht verfügbar
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CY8C9560A-24AXI CY8C9560A-24AXI INFINEON TECHNOLOGIES Infineon-CY8C9520A_CY8C9540A_CY8C9560A_20-_40-_and_60-Bit_I_O_Expander_with_EEPROM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd16ae2f29&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integr Category: I2C interfaces - integrated circuits
Description: IC: PSoC microcontroller; GPIO,I2C; 3÷5.25VDC; TQFP100; -40÷85°C
Interface: GPIO; I2C
Clock frequency: 24MHz
Integrated circuit features: watchdog
Type of integrated circuit: PSoC microcontroller
Case: TQFP100
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3...5.25V DC
Number of inputs/outputs: 60
Produkt ist nicht verfügbar
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CY8C29566-24AXI CY8C29566-24AXI INFINEON TECHNOLOGIES CY8C29466-24PVXI.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 1kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 40
Supply voltage: 3...5.25V DC
Memory: 1kB SRAM; 32kB FLASH
Clock frequency: 24MHz
Kind of core: 8-bit
Interface: I2C; SPI; UART
Operating temperature: -40...85°C
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CY8C4246AZI-L433 CY8C4246AZI-L433 INFINEON TECHNOLOGIES CY8C4246AZI-L423.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP48; 8kBSRAM,64kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Clock frequency: 48MHz
Integrated circuit features: CapSense; LCD controller
Type of integrated circuit: PSoC microcontroller
Case: TQFP48
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 38
Memory: 8kB SRAM; 64kB FLASH
Kind of core: 32-bit
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CY8C4246AXI-M445 CY8C4246AXI-M445 INFINEON TECHNOLOGIES CY8C4245AZI-M443.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP64; 8kBSRAM,64kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Clock frequency: 48MHz
Integrated circuit features: CapSense; LCD controller
Type of integrated circuit: PSoC microcontroller
Case: TQFP64
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 51
Memory: 8kB SRAM; 64kB FLASH
Kind of core: 32-bit
Produkt ist nicht verfügbar
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CY8C4246LTI-DM405 CY8C4246LTI-DM405 INFINEON TECHNOLOGIES CY8C4245AZI-M443.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; QFN68; 8kBSRAM,64kBFLASH
Type of integrated circuit: PSoC microcontroller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Integrated circuit features: CapSense; LCD controller
Mounting: SMD
Case: QFN68
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 55
Memory: 8kB SRAM; 64kB FLASH
Kind of core: 32-bit
Clock frequency: 48MHz
Produkt ist nicht verfügbar
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CY8C27643-24LTXI CY8C27643-24LTXI INFINEON TECHNOLOGIES CY8C27x43_38-12012.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; QFN48; 1kBSRAM,16kBFLASH
Interface: GPIO; I2C; SPI; UART
Clock frequency: 24MHz
Type of integrated circuit: PSoC microcontroller
Case: QFN48
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3...5.25V DC
Number of inputs/outputs: 44
Memory: 1kB SRAM; 16kB FLASH
Kind of core: 8-bit
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CY8C28645-24LTXI CY8C28645-24LTXI INFINEON TECHNOLOGIES CY8C28243-24PVXI.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; QFN48; 1kBSRAM,16kBFLASH
Interface: GPIO; I2C; SPI; UART
Clock frequency: 24MHz
Type of integrated circuit: PSoC microcontroller
Case: QFN48
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3...5.25V DC
Number of inputs/outputs: 44
Memory: 1kB SRAM; 16kB FLASH
Kind of core: 8-bit
Produkt ist nicht verfügbar
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CY8C3866AXI-040 CY8C3866AXI-040 INFINEON TECHNOLOGIES Infineon-PSoC_3_CY8C38_Programmable_System-on-Chip-DataSheet-v34_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec70ebd3dce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 67MHz; TQFP100; 8kBSRAM,64kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP100
Number of inputs/outputs: 72
Supply voltage: 1.71...5.5V DC
Operating temperature: -40...85°C
Kind of core: 8-bit
Interface: GPIO; I2C; SPI; UART; USB
Integrated circuit features: watchdog
Memory: 8kB SRAM; 64kB FLASH
Clock frequency: 67MHz
Produkt ist nicht verfügbar
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CY8C4126AZI-M443 CY8C4126AZI-M443 INFINEON TECHNOLOGIES CY8C4125AZI-M443.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP48; 8kBSRAM,64kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Clock frequency: 24MHz
Integrated circuit features: CapSense; LCD controller
Type of integrated circuit: PSoC microcontroller
Case: TQFP48
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 38
Memory: 8kB SRAM; 64kB FLASH
Kind of core: 32-bit
Produkt ist nicht verfügbar
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CY8C4126LTI-M445 CY8C4126LTI-M445 INFINEON TECHNOLOGIES CY8C4125AZI-M443.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; QFN68; 8kBSRAM,64kBFLASH
Type of integrated circuit: PSoC microcontroller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Integrated circuit features: CapSense; LCD controller
Mounting: SMD
Case: QFN68
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 55
Memory: 8kB SRAM; 64kB FLASH
Kind of core: 32-bit
Clock frequency: 24MHz
Produkt ist nicht verfügbar
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CY8C4146LQI-S422 CY8C4146LQI-S422 INFINEON TECHNOLOGIES CY8C4146LQI-S422.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; QFN32; 8kBSRAM,64kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Clock frequency: 48MHz
Integrated circuit features: CapSense
Type of integrated circuit: PSoC microcontroller
Case: QFN32
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 27
Memory: 8kB SRAM; 64kB FLASH
Kind of core: 32-bit
Produkt ist nicht verfügbar
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CY8C4146LQI-S433 CY8C4146LQI-S433 INFINEON TECHNOLOGIES CY8C4146LQI-S422.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; QFN40; 8kBSRAM,64kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Clock frequency: 48MHz
Integrated circuit features: CapSense
Type of integrated circuit: PSoC microcontroller
Case: QFN40
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 34
Memory: 8kB SRAM; 64kB FLASH
Kind of core: 32-bit
Produkt ist nicht verfügbar
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CY8C4246AZI-L423 CY8C4246AZI-L423 INFINEON TECHNOLOGIES CY8C4246AZI-L423.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP48; 8kBSRAM,64kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Clock frequency: 48MHz
Integrated circuit features: CapSense; LCD controller
Type of integrated circuit: PSoC microcontroller
Case: TQFP48
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 38
Memory: 8kB SRAM; 64kB FLASH
Kind of core: 32-bit
Produkt ist nicht verfügbar
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CY8C4246AZI-L445 CY8C4246AZI-L445 INFINEON TECHNOLOGIES CY8C4246AZI-L423.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP64; 8kBSRAM,64kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Clock frequency: 48MHz
Integrated circuit features: CapSense; LCD controller
Type of integrated circuit: PSoC microcontroller
Case: TQFP64
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 53
Memory: 8kB SRAM; 64kB FLASH
Kind of core: 32-bit
Produkt ist nicht verfügbar
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BFP193E6327 BFP193E6327-dte.pdf
BFP193E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 80mA; 0.58W; SOT143
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 80mA
Power dissipation: 0.58W
Case: SOT143
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
Current gain: 70...140
auf Bestellung 1598 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
298+0.24 EUR
391+0.18 EUR
439+0.16 EUR
500+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 193
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IRFB4410ZPBF description irfb4410zpbf.pdf
IRFB4410ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 97A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 97A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1641 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.07 EUR
40+1.82 EUR
52+1.39 EUR
58+1.24 EUR
66+1.09 EUR
100+0.97 EUR
200+0.89 EUR
500+0.8 EUR
Mindestbestellmenge: 35
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IRFB4610PBF description irfs4610.pdf
IRFB4610PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 190W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 73A
Power dissipation: 190W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 830 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.63 EUR
29+2.52 EUR
32+2.26 EUR
34+2.16 EUR
50+2 EUR
100+1.89 EUR
200+1.77 EUR
500+1.63 EUR
Mindestbestellmenge: 28
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IRFB38N20DPBF description irfs38n20d.pdf
IRFB38N20DPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 44A; 320W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 44A
Power dissipation: 320W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 54mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 77 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.1 EUR
29+2.5 EUR
33+2.23 EUR
50+1.73 EUR
Mindestbestellmenge: 24
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IRFB52N15DPBF irfs52n15d.pdf
IRFB52N15DPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 190 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.53 EUR
35+2.07 EUR
39+1.87 EUR
44+1.63 EUR
50+1.52 EUR
100+1.46 EUR
Mindestbestellmenge: 29
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IRFB5620PBF irfb5620pbf.pdf
IRFB5620PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 25A; 144W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 25A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 72.5mΩ
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 124 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+1.99 EUR
55+1.32 EUR
62+1.16 EUR
Mindestbestellmenge: 36
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IRFB3307PBF irfs3307.pdf
IRFB3307PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 250W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 130A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1270 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.7 EUR
28+2.56 EUR
30+2.43 EUR
36+2 EUR
42+1.73 EUR
50+1.43 EUR
100+1.26 EUR
Mindestbestellmenge: 27
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IRFB7730PBF IRFB7730PBF.pdf
IRFB7730PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 246A; 375W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 246A
Power dissipation: 375W
Case: TO220AB
On-state resistance: 2.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 129 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.87 EUR
34+2.16 EUR
50+1.94 EUR
100+1.79 EUR
Mindestbestellmenge: 25
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IRFB4332PbF irfb4332pbf.pdf
IRFB4332PbF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 390W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 99nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 124 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.82 EUR
29+2.47 EUR
33+2.23 EUR
50+2.14 EUR
Mindestbestellmenge: 26
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IRFB7534PBF irfs7534pbf.pdf
IRFB7534PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 294W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 294W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 186nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
auf Bestellung 660 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+2.02 EUR
48+1.52 EUR
57+1.26 EUR
66+1.09 EUR
Mindestbestellmenge: 36
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IRFB7537PBF irfs7537pbf.pdf
IRFB7537PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 173A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 173A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
auf Bestellung 1059 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.72 EUR
38+1.92 EUR
53+1.37 EUR
74+0.97 EUR
Mindestbestellmenge: 27
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IRFB3307ZPBF irfs3307zpbf.pdf
IRFB3307ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 236 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.85 EUR
27+2.7 EUR
47+1.53 EUR
54+1.34 EUR
Mindestbestellmenge: 26
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IRFB4410PBF description irfs4410.pdf
IRFB4410PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 96A; 250W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 96A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 972 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.45 EUR
36+2.02 EUR
55+1.32 EUR
100+1.04 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
IRFB5615PBF irfb5615pbf.pdf
IRFB5615PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 35A; 144W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 35A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 242 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.93 EUR
48+1.52 EUR
54+1.33 EUR
64+1.13 EUR
72+1 EUR
100+0.94 EUR
Mindestbestellmenge: 38
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IPB033N10N5LF IPB033N10N5LF.pdf
IPB033N10N5LF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 108A; 179W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 108A
Case: PG-TO263-3
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 179W
Technology: OptiMOS™ 5
On-state resistance: 3.3mΩ
Produkt ist nicht verfügbar
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S25FS064SAGNFB033
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; LGA8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: LGA8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
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TT285N16KOFHPSA2 Infineon-TT285N16KOF-DS-v03_04-EN.pdf?fileId=db3a304412b407950112b42f7b4d4bc5
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 285A; BG-PB50AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 285A
Case: BG-PB50AT-1
Max. forward voltage: 1.28V
Max. forward impulse current: 10kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IPA60R190P6XKSA1 IPA60R190P6-DTE.pdf
IPA60R190P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1042 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.4 EUR
36+2.03 EUR
50+1.52 EUR
100+1.33 EUR
250+1.19 EUR
Mindestbestellmenge: 30
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BSS670S2LH6327XTSA1 BSS670S2LH6327XTSA.pdf
BSS670S2LH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 0.54A; 0.36W; SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Power dissipation: 0.36W
Drain current: 0.54A
On-state resistance: 0.65Ω
Gate-source voltage: ±20V
Drain-source voltage: 55V
auf Bestellung 6103 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
239+0.3 EUR
332+0.22 EUR
486+0.15 EUR
573+0.12 EUR
807+0.089 EUR
1000+0.077 EUR
3000+0.063 EUR
6000+0.062 EUR
Mindestbestellmenge: 239
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BAT6202VH6327XTSA1 BAT62E6327HTSA1.pdf
BAT6202VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 40V; 20mA; 100mW
Mounting: SMD
Case: SC79
Type of diode: Schottky switching
Semiconductor structure: single diode
Load current: 20mA
Power dissipation: 0.1W
Max. forward voltage: 1V
Max. off-state voltage: 40V
auf Bestellung 2596 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.5 EUR
210+0.34 EUR
281+0.25 EUR
317+0.23 EUR
371+0.19 EUR
500+0.17 EUR
1000+0.14 EUR
Mindestbestellmenge: 143
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BAT62E6327HTSA1 BAT62E6327HTSA1.pdf
BAT62E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143; SMD; 40V; 20mA; 100mW
Type of diode: Schottky switching
Case: SOT143
Mounting: SMD
Max. off-state voltage: 40V
Load current: 20mA
Semiconductor structure: double independent
Max. forward voltage: 1V
Power dissipation: 0.1W
Produkt ist nicht verfügbar
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FZ1000R33HE3BPSA1 FZ1000R33HE3.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 3.3kV; Ic: 1kA; screw
Case: AG-IHVB130-3
Semiconductor structure: transistor/transistor
Technology: TRENCHSTOP™
Type of semiconductor module: IGBT
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 1kA
Max. off-state voltage: 3.3kV
Pulsed collector current: 2kA
Produkt ist nicht verfügbar
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FF450R33T3E3B5BPSA1 Infineon-FF450R33T3E3_B5-DS-v03_00-EN.pdf?fileId=5546d46267c74c9a01683cd2886064d9
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Topology: IGBT half-bridge
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Technology: XHP™3
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Max. off-state voltage: 3.3kV
Case: AG-XHP100-6
Produkt ist nicht verfügbar
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FZ825R33HE4DBPSA1 Infineon-FZ825R33HE4D-DataSheet-v01_10-EN.pdf?fileId=5546d46278d64ffd0178f97d4dd50584
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Topology: IGBT x2
Semiconductor structure: common emitter; transistor/transistor
Type of semiconductor module: IGBT
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 825A
Pulsed collector current: 1.65kA
Max. off-state voltage: 3.3kV
Case: AG-IHVB130
Produkt ist nicht verfügbar
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FZ1400R33HE4BPSA1 Infineon-Bodos_Power_Systems_Modules%20for_traction_converters-Article-v01_00-EN.pdf?fileId=5546d46269e1c019016a96de3a714ec0
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Topology: IGBT x2
Semiconductor structure: common emitter; transistor/transistor
Type of semiconductor module: IGBT
Technology: TRENCHSTOP™
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 1.4kA
Pulsed collector current: 2.8kA
Max. off-state voltage: 3.3kV
Case: AG-IHVB130-3
Produkt ist nicht verfügbar
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FZ2000R33HE4BOSA1 Infineon-FZ2000R33HE4-DataSheet-v02_01-EN.pdf?fileId=5546d4626eab8fbf016ed15a9df22af8
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x3
Topology: IGBT x3
Semiconductor structure: common emitter; transistor/transistor
Type of semiconductor module: IGBT
Technology: TRENCHSTOP™
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 2kA
Pulsed collector current: 4kA
Max. off-state voltage: 3.3kV
Case: AG-IHVB190-3
Produkt ist nicht verfügbar
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FD1000R33HE3KBPSA1 FD1000R33HE3K.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck-boost chopper; Urmax: 3.3kV
Power dissipation: 11.5kW
Case: AG-IHVB190
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
Application: Inverter
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 1kA
Max. off-state voltage: 3.3kV
Pulsed collector current: 2kA
Topology: buck-boost chopper
Produkt ist nicht verfügbar
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IRF1018EPBF description irf1018epbf.pdf
IRF1018EPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; 110W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 79A
Power dissipation: 110W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BGA524N6E6327XTSA1 BGA524N6.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD operational amplifiers
Description: IC: RF amplifier; 1550÷1615MHz; Ch: 1; 1.5÷3.3VDC; TSNP6; reel,tape
Type of integrated circuit: RF amplifier
Bandwidth: 1550...1615MHz
Number of channels: 1
Mounting: SMT
Voltage supply range: 1.5...3.3V DC
Case: TSNP6
Operating temperature: -40...85°C
Integrated circuit features: low noise
Kind of package: reel; tape
Application: global navigation satellite systems (GPS)
Produkt ist nicht verfügbar
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BTS70402EPAXUMA1 Infineon-BTS7040-2EPA-DS-v01_00-EN.pdf?fileId=5546d4625e763904015e9412cf6e2dbb
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.5A; Ch: 2; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3.5A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: PG-TSDSO-14
On-state resistance: 36mΩ
Kind of package: reel; tape
Supply voltage: 4.1...28V DC
Technology: PROFET™+2
Operating temperature: -40...150°C
Produkt ist nicht verfügbar
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BTS70401EPAXUMA1 BTS70401EPA.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4.5A; Ch: 1; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 4.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TSDSO-14
On-state resistance: 36mΩ
Kind of package: reel; tape
Supply voltage: 4.1...28V DC
Technology: PROFET™+2
Operating temperature: -40...150°C
Produkt ist nicht verfügbar
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BTS70802EPAXUMA1 Infineon-BTS7080-2EPA-DS-v01_00-EN.pdf?fileId=5546d4625e763904015e941bf21e2dbe
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 2; N-Channel; SMD; PG-TSDSO-14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: PG-TSDSO-14
On-state resistance: 39.6mΩ
Kind of package: reel; tape
Supply voltage: 4.1...28V DC
Technology: PROFET™+2
Operating temperature: -40...150°C
Produkt ist nicht verfügbar
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CY8C28452-24PVXI CY8C28243-24PVXI.pdf
CY8C28452-24PVXI
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP28; 1kBSRAM,16kBFLASH
Interface: GPIO; I2C; SPI; UART
Mounting: SMD
Case: SSOP28
Operating temperature: -40...85°C
Supply voltage: 3...5.25V DC
Number of inputs/outputs: 24
Memory: 1kB SRAM; 16kB FLASH
Clock frequency: 24MHz
Kind of core: 8-bit
Type of integrated circuit: PSoC microcontroller
Produkt ist nicht verfügbar
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IRL40SC209 Infineon-IRL40SC209-DS-v02_00-EN.pdf?fileId=5546d462557e6e890155a1413329602d
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 478A; 375W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 478A
Power dissipation: 375W
Case: D2PAK-7
On-state resistance: 600µΩ
Mounting: SMD
Gate charge: 267nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ICE3BR4765JGXUMA1 ICE3BR4765JG.pdf
ICE3BR4765JGXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 2.32A; 65kHz; Ch: 1; PG-DSO-12; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 65kHz
Number of channels: 1
Case: PG-DSO-12
Mounting: SMD
Operating temperature: -40...150°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...80%
Power: 24/16.5W
Application: SMPS
Operating voltage: 10.5...25V DC
Output current: 2.32A
auf Bestellung 2537 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
42+1.73 EUR
45+1.6 EUR
50+1.46 EUR
100+1.36 EUR
500+1.34 EUR
Mindestbestellmenge: 42
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BSC340N08NS3GATMA1 BSC340N08NS3G-DTE.pdf
BSC340N08NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 23A; 32W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 23A
Power dissipation: 32W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 5569 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
79+0.92 EUR
108+0.67 EUR
144+0.5 EUR
250+0.45 EUR
500+0.42 EUR
1000+0.38 EUR
2000+0.35 EUR
2500+0.34 EUR
5000+0.31 EUR
Mindestbestellmenge: 79
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BTS3800SL BTS3800SL.pdf
BTS3800SL
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.35A; Ch: 1; N-Channel; SMD; PG-SCT595
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 0.35A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-SCT595
On-state resistance: 0.8Ω
Technology: HITFET®
Operating temperature: -40...150°C
Turn-on time: 3µs
Turn-off time: 3µs
auf Bestellung 684 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.79 EUR
67+1.08 EUR
80+0.9 EUR
102+0.7 EUR
250+0.6 EUR
500+0.54 EUR
Mindestbestellmenge: 40
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IPD30N03S4L09ATMA1 IPD30N03S4L09.pdf
IPD30N03S4L09ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 30V; 30A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhancement
Technology: OptiMOS™ T2
Produkt ist nicht verfügbar
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IPD30N03S4L14ATMA1 Infineon-IPD30N03S4L_14-DS-v02_01-en.pdf?folderId=db3a304412b407950112b426f7da3b27&fileId=db3a304412b407950112b426f9b13b2c&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 31W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Power dissipation: 31W
Case: DPAK; TO252
On-state resistance: 11.2mΩ
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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BSZ130N03LSGATMA1 BSZ130N03LSG-DTE.pdf
BSZ130N03LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; 25W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 28A
Power dissipation: 25W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSC030N03LSGATMA1 BSC030N03LSG-DTE.pdf
BSC030N03LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 98A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 98A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSC030N03MSGATMA1 BSC030N03MSG-DTE.pdf
BSC030N03MSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSZ130N03MSGATMA1 BSZ130N03MSG-DTE.pdf
BSZ130N03MSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 31A; 25W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 31A
Power dissipation: 25W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPD30N03S2L20ATMA1 Infineon-IPD30N03S2L_20-DS-v01_00-en.pdf?folderId=db3a304412b407950112b426f7da3b27&fileId=db3a304412b407950112b4270c9e3b6a&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 30V; 30A; Idm: 30A; 60W; DPAK; ESD
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 30V
Drain current: 30A
Pulsed drain current: 30A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 19nC
Kind of channel: enhancement
Application: automotive industry
Technology: MOSFET
Version: ESD
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.56 EUR
Mindestbestellmenge: 2500
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CY8C21123-24SXI description CY8C21123-24SXI-DTE.pdf
CY8C21123-24SXI
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SO8; 256BSRAM,4kBFLASH
Interface: I2C; SPI; UART
Clock frequency: 24MHz
Type of integrated circuit: PSoC microcontroller
Case: SO8
Mounting: SMD
Supply voltage: 2.4...5.25V DC
Number of inputs/outputs: 6
Memory: 256B SRAM; 4kB FLASH
Kind of core: 8-bit
Produkt ist nicht verfügbar
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CY8C24123A-24SXI Infineon-CY8C24123A_CY8C24223A_CY8C24423A_PSoC_Programmable_System-on-Chip-DataSheet-v24_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec6aaf93d0f
CY8C24123A-24SXI
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SO8; 256BSRAM,4kBFLASH
Interface: GPIO; I2C; SPI; UART
Clock frequency: 24MHz
Integrated circuit features: watchdog
Type of integrated circuit: PSoC microcontroller
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3...5.25V DC
Number of inputs/outputs: 6
Memory: 256B SRAM; 4kB FLASH
Kind of core: 8-bit
Produkt ist nicht verfügbar
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CY8C9560A-24AXI Infineon-CY8C9520A_CY8C9540A_CY8C9560A_20-_40-_and_60-Bit_I_O_Expander_with_EEPROM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd16ae2f29&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integr
CY8C9560A-24AXI
Hersteller: INFINEON TECHNOLOGIES
Category: I2C interfaces - integrated circuits
Description: IC: PSoC microcontroller; GPIO,I2C; 3÷5.25VDC; TQFP100; -40÷85°C
Interface: GPIO; I2C
Clock frequency: 24MHz
Integrated circuit features: watchdog
Type of integrated circuit: PSoC microcontroller
Case: TQFP100
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3...5.25V DC
Number of inputs/outputs: 60
Produkt ist nicht verfügbar
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CY8C29566-24AXI CY8C29466-24PVXI.pdf
CY8C29566-24AXI
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 1kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 40
Supply voltage: 3...5.25V DC
Memory: 1kB SRAM; 32kB FLASH
Clock frequency: 24MHz
Kind of core: 8-bit
Interface: I2C; SPI; UART
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CY8C4246AZI-L433 CY8C4246AZI-L423.pdf
CY8C4246AZI-L433
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP48; 8kBSRAM,64kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Clock frequency: 48MHz
Integrated circuit features: CapSense; LCD controller
Type of integrated circuit: PSoC microcontroller
Case: TQFP48
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 38
Memory: 8kB SRAM; 64kB FLASH
Kind of core: 32-bit
Produkt ist nicht verfügbar
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CY8C4246AXI-M445 CY8C4245AZI-M443.pdf
CY8C4246AXI-M445
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP64; 8kBSRAM,64kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Clock frequency: 48MHz
Integrated circuit features: CapSense; LCD controller
Type of integrated circuit: PSoC microcontroller
Case: TQFP64
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 51
Memory: 8kB SRAM; 64kB FLASH
Kind of core: 32-bit
Produkt ist nicht verfügbar
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CY8C4246LTI-DM405 CY8C4245AZI-M443.pdf
CY8C4246LTI-DM405
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; QFN68; 8kBSRAM,64kBFLASH
Type of integrated circuit: PSoC microcontroller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Integrated circuit features: CapSense; LCD controller
Mounting: SMD
Case: QFN68
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 55
Memory: 8kB SRAM; 64kB FLASH
Kind of core: 32-bit
Clock frequency: 48MHz
Produkt ist nicht verfügbar
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CY8C27643-24LTXI CY8C27x43_38-12012.pdf
CY8C27643-24LTXI
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; QFN48; 1kBSRAM,16kBFLASH
Interface: GPIO; I2C; SPI; UART
Clock frequency: 24MHz
Type of integrated circuit: PSoC microcontroller
Case: QFN48
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3...5.25V DC
Number of inputs/outputs: 44
Memory: 1kB SRAM; 16kB FLASH
Kind of core: 8-bit
Produkt ist nicht verfügbar
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CY8C28645-24LTXI CY8C28243-24PVXI.pdf
CY8C28645-24LTXI
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; QFN48; 1kBSRAM,16kBFLASH
Interface: GPIO; I2C; SPI; UART
Clock frequency: 24MHz
Type of integrated circuit: PSoC microcontroller
Case: QFN48
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3...5.25V DC
Number of inputs/outputs: 44
Memory: 1kB SRAM; 16kB FLASH
Kind of core: 8-bit
Produkt ist nicht verfügbar
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CY8C3866AXI-040 Infineon-PSoC_3_CY8C38_Programmable_System-on-Chip-DataSheet-v34_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec70ebd3dce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C3866AXI-040
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 67MHz; TQFP100; 8kBSRAM,64kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP100
Number of inputs/outputs: 72
Supply voltage: 1.71...5.5V DC
Operating temperature: -40...85°C
Kind of core: 8-bit
Interface: GPIO; I2C; SPI; UART; USB
Integrated circuit features: watchdog
Memory: 8kB SRAM; 64kB FLASH
Clock frequency: 67MHz
Produkt ist nicht verfügbar
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CY8C4126AZI-M443 CY8C4125AZI-M443.pdf
CY8C4126AZI-M443
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP48; 8kBSRAM,64kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Clock frequency: 24MHz
Integrated circuit features: CapSense; LCD controller
Type of integrated circuit: PSoC microcontroller
Case: TQFP48
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 38
Memory: 8kB SRAM; 64kB FLASH
Kind of core: 32-bit
Produkt ist nicht verfügbar
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CY8C4126LTI-M445 CY8C4125AZI-M443.pdf
CY8C4126LTI-M445
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; QFN68; 8kBSRAM,64kBFLASH
Type of integrated circuit: PSoC microcontroller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Integrated circuit features: CapSense; LCD controller
Mounting: SMD
Case: QFN68
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 55
Memory: 8kB SRAM; 64kB FLASH
Kind of core: 32-bit
Clock frequency: 24MHz
Produkt ist nicht verfügbar
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CY8C4146LQI-S422 CY8C4146LQI-S422.pdf
CY8C4146LQI-S422
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; QFN32; 8kBSRAM,64kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Clock frequency: 48MHz
Integrated circuit features: CapSense
Type of integrated circuit: PSoC microcontroller
Case: QFN32
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 27
Memory: 8kB SRAM; 64kB FLASH
Kind of core: 32-bit
Produkt ist nicht verfügbar
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CY8C4146LQI-S433 CY8C4146LQI-S422.pdf
CY8C4146LQI-S433
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; QFN40; 8kBSRAM,64kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Clock frequency: 48MHz
Integrated circuit features: CapSense
Type of integrated circuit: PSoC microcontroller
Case: QFN40
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 34
Memory: 8kB SRAM; 64kB FLASH
Kind of core: 32-bit
Produkt ist nicht verfügbar
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CY8C4246AZI-L423 CY8C4246AZI-L423.pdf
CY8C4246AZI-L423
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP48; 8kBSRAM,64kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Clock frequency: 48MHz
Integrated circuit features: CapSense; LCD controller
Type of integrated circuit: PSoC microcontroller
Case: TQFP48
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 38
Memory: 8kB SRAM; 64kB FLASH
Kind of core: 32-bit
Produkt ist nicht verfügbar
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CY8C4246AZI-L445 CY8C4246AZI-L423.pdf
CY8C4246AZI-L445
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP64; 8kBSRAM,64kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Clock frequency: 48MHz
Integrated circuit features: CapSense; LCD controller
Type of integrated circuit: PSoC microcontroller
Case: TQFP64
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 53
Memory: 8kB SRAM; 64kB FLASH
Kind of core: 32-bit
Produkt ist nicht verfügbar
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