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IRS21814STRPBF INFINEON TECHNOLOGIES infineon-2ed2101s06f-datasheet-en.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 240ns
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IRS2101STRPBF INFINEON TECHNOLOGIES infineon-irs2101-datasheet-en.pdf Category: MOSFET/IGBT drivers
Description: IC: driver
Mounting: SMD
Type of integrated circuit: driver
Produkt ist nicht verfügbar
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IRS2113MTRPBF INFINEON TECHNOLOGIES irs2113mpbf.pdf?fileId=5546d462533600a40153567676a227b7 Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
Produkt ist nicht verfügbar
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IRS2118SPBF IRS2118SPBF INFINEON TECHNOLOGIES irs2117pbf.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
Produkt ist nicht verfügbar
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IRS21271STRPBF INFINEON TECHNOLOGIES IRS212XXSTRPBf.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; current sensor,high-side; SO8; -600÷290mA; 625mW; Ch: 1
Number of channels: 1
Supply voltage: 9...20V DC
Kind of integrated circuit: current sensor; high-side
Voltage class: 600V
Type of integrated circuit: driver
Kind of package: reel; tape
Mounting: SMD
Case: SO8
Operating temperature: -40...125°C
Output current: -600...290mA
Turn-off time: 190ns
Turn-on time: 0.2µs
Power: 625mW
Produkt ist nicht verfügbar
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IRS2168DSTRPBF IRS2168DSTRPBF INFINEON TECHNOLOGIES irs2168d.pdf?fileId=5546d462533600a401535676b78127d0 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; SO16; -260÷180mA; 1.4W; Ch: 2; 600V
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: ballast controller; gate driver; high-/low-side; PFC controller
Case: SO16
Output current: -260...180mA
Power: 1.4W
Number of channels: 2
Supply voltage: 11.5...16.6V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
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IRS2183STRPBF INFINEON TECHNOLOGIES irs2183.pdf?fileId=5546d462533600a401535676d20c27d8 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1.9A; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 1.9A
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Integrated circuit features: MOSFET
auf Bestellung 2500 Stücke:
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2500+1.46 EUR
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IRS2117STRPBF INFINEON TECHNOLOGIES irs2117pbf.pdf?fileId=5546d462533600a4015356767f2127b9 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side; SOIC8; 290mA; Ch: 1; MOSFET; Iout max: 290mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side
Case: SOIC8
Output current: 0.29A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...150°C
Power dissipation: 0.625W
Pulse fall time: 35ns
Impulse rise time: 75ns
Integrated circuit features: MOSFET
Maximum output current: 290mA
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IRF7205TRPBF IRF7205TRPBF INFINEON TECHNOLOGIES irf7205pbf.pdf description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.6A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.6A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 2740 Stücke:
Lieferzeit 14-21 Tag (e)
73+0.99 EUR
98+0.73 EUR
133+0.54 EUR
150+0.48 EUR
250+0.42 EUR
500+0.38 EUR
1000+0.34 EUR
2000+0.31 EUR
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IRF7201TRPBF IRF7201TRPBF INFINEON TECHNOLOGIES IRF7201TRPBF.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF7105TRPBF IRF7105TRPBF INFINEON TECHNOLOGIES irf7105pbf.pdf description Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 25/-25V; 3.5/-2.3A; 2W; SO8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 25/-25V
Drain current: 3.5/-2.3A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.1/0.25Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 1994 Stücke:
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80+0.9 EUR
103+0.7 EUR
147+0.49 EUR
173+0.41 EUR
250+0.33 EUR
500+0.29 EUR
1000+0.27 EUR
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IRF7101TRPBF IRF7101TRPBF INFINEON TECHNOLOGIES irf7101pbf.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.5A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
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IRF7104TRPBF IRF7104TRPBF INFINEON TECHNOLOGIES irf7104pbf.pdf description Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.3A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BC858CE6327 BC858CE6327 INFINEON TECHNOLOGIES BC858CE6327.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 10 Stücke:
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10+7.15 EUR
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IR2109STRPBF IR2109STRPBF INFINEON TECHNOLOGIES IR21094SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V DC
Output current: -250...120mA
Turn-off time: 200ns
Power: 625mW
Voltage class: 600V
Turn-on time: 750ns
auf Bestellung 3599 Stücke:
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51+1.42 EUR
57+1.26 EUR
65+1.12 EUR
69+1.04 EUR
71+1.02 EUR
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IR21094STRPBF IR21094STRPBF INFINEON TECHNOLOGIES IR21094SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Mounting: SMD
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Type of integrated circuit: driver
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -250...120mA
Turn-off time: 200ns
Turn-on time: 750ns
Number of channels: 2
Power: 1W
Supply voltage: 10...20V DC
Voltage class: 600V
auf Bestellung 1179 Stücke:
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36+1.99 EUR
48+1.5 EUR
53+1.37 EUR
55+1.3 EUR
100+1.23 EUR
250+1.19 EUR
Mindestbestellmenge: 36
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IR21094SPBF IR21094SPBF INFINEON TECHNOLOGIES IR21094SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Mounting: SMD
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Type of integrated circuit: driver
Kind of package: tube
Operating temperature: -40...125°C
Output current: -250...120mA
Turn-off time: 200ns
Turn-on time: 750ns
Number of channels: 2
Power: 1W
Supply voltage: 10...20V DC
Voltage class: 600V
auf Bestellung 11 Stücke:
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11+6.51 EUR
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IR21084STRPBF INFINEON TECHNOLOGIES ir2108.pdf?fileId=5546d462533600a4015355c7dc321676 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC14; 350mA; Ch: 2; MOSFET; 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC14
Output current: 0.35A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Produkt ist nicht verfügbar
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TLE6232GPAUMA2 TLE6232GPAUMA2 INFINEON TECHNOLOGIES TLE6232GP.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.55÷1.1A; Ch: 6; N-Channel; SMD; FLEX
Type of integrated circuit: power switch
Supply voltage: 4.5...5.5V DC
Case: PG-DSO-36
Mounting: SMD
Operating temperature: -40...150°C
Turn-off time: 10µs
Turn-on time: 10µs
Output current: 0.55...1.1A
Kind of integrated circuit: low-side
Kind of output: N-Channel
Technology: FLEX
Number of channels: 6
Produkt ist nicht verfügbar
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CY8C4245AXI-483 CY8C4245AXI-483 INFINEON TECHNOLOGIES CY8C4244LQI-443.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP44; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 36
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 48MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CY8C4125AXI-483 CY8C4125AXI-483 INFINEON TECHNOLOGIES CY8C4124AXI-443.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 36
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 24MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CY8C27543-24AXI CY8C27543-24AXI INFINEON TECHNOLOGIES CY8C27x43_38-12012.pdf description Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 256BSRAM,16kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 40
Supply voltage: 3...5.25V DC
Memory: 256B SRAM; 16kB FLASH
Clock frequency: 24MHz
Kind of core: 8-bit
Interface: I2C; SPI; UART
Produkt ist nicht verfügbar
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CY8C4124AXI-443 CY8C4124AXI-443 INFINEON TECHNOLOGIES CY8C4124AXI-443.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,16kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 36
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 16kB FLASH
Clock frequency: 24MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CY8C4125AXI-473 CY8C4125AXI-473 INFINEON TECHNOLOGIES CY8C4124AXI-443.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 36
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 24MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CY8C4125AXQ-483 CY8C4125AXQ-483 INFINEON TECHNOLOGIES CY8C4124AXI-443.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 36
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 24MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CY8C4147AXI-S453 CY8C4147AXI-S453 INFINEON TECHNOLOGIES CY8C4147AXI-S453.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP44; 16kBSRAM,128kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 36
Supply voltage: 1.71...5.5V DC
Memory: 16kB SRAM; 128kB FLASH
Clock frequency: 48MHz
Kind of core: 32-bit
Integrated circuit features: CapSense
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CY8C4245AXI-473 CY8C4245AXI-473 INFINEON TECHNOLOGIES CY8C4244LQI-443.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP44; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 36
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 48MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CY8C4245AZI-M443 CY8C4245AZI-M443 INFINEON TECHNOLOGIES CY8C4245AZI-M443.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP44; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 38
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 48MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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IRF4104PBF IRF4104PBF INFINEON TECHNOLOGIES irf4104.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 68nC
Kind of package: tube
auf Bestellung 125 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.83 EUR
57+1.27 EUR
66+1.09 EUR
100+1 EUR
Mindestbestellmenge: 40
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IPP041N04NGXKSA1 IPP041N04NGXKSA1 INFINEON TECHNOLOGIES IPP041N04NG-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 94W; PG-TO220-3
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Case: PG-TO220-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 4.1mΩ
Power dissipation: 94W
Drain current: 80A
Gate-source voltage: ±20V
Drain-source voltage: 40V
auf Bestellung 176 Stücke:
Lieferzeit 14-21 Tag (e)
43+1.7 EUR
75+0.96 EUR
84+0.86 EUR
91+0.79 EUR
100+0.72 EUR
Mindestbestellmenge: 43
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IRF40H233XTMA1 INFINEON TECHNOLOGIES Infineon-IRF40H233-DS-v01_00-EN.pdf?fileId=5546d462689a790c0168a1d5500962d9 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; StrongIRFET™; unipolar; 40V; 32A; 50W
Type of transistor: N-MOSFET x2
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 32A
Pulsed drain current: 140A
Power dissipation: 50W
Case: PQFN5X6
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AUIRF4104STRL AUIRF4104STRL INFINEON TECHNOLOGIES auirf4104.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 68nC
Kind of package: reel
Produkt ist nicht verfügbar
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BAS3007ARPPE6327HTSA1 BAS3007ARPPE6327HTSA1 INFINEON TECHNOLOGIES BAS3007ARPPE6327.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 30V; If: 0.9A; Ifsm: 5A; SOT143; SMT
Case: SOT143
Kind of package: reel; tape
Electrical mounting: SMT
Features of semiconductor devices: Schottky
Type of bridge rectifier: single-phase
Load current: 0.9A
Max. forward impulse current: 5A
Max. off-state voltage: 30V
auf Bestellung 2060 Stücke:
Lieferzeit 14-21 Tag (e)
120+0.6 EUR
146+0.49 EUR
163+0.44 EUR
226+0.32 EUR
500+0.27 EUR
1000+0.25 EUR
Mindestbestellmenge: 120
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BAS3005B02VH6327XTSA1 BAS3005B02VH6327XTSA1 INFINEON TECHNOLOGIES BAS3005B02VH6327XT.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 30V; 0.5A
Mounting: SMD
Case: SC79
Max. forward impulse current: 5A
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Max. off-state voltage: 30V
Type of diode: Schottky switching
auf Bestellung 1520 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
410+0.17 EUR
532+0.13 EUR
625+0.11 EUR
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S29AL008J70TFI010 S29AL008J70TFI010 INFINEON TECHNOLOGIES Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; TSSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 8Mb FLASH
Interface: CFI; parallel
Kind of interface: parallel
Mounting: SMD
Case: TSSOP48
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
auf Bestellung 1049 Stücke:
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20+3.66 EUR
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TT215N22KOF TT215N22KOF INFINEON TECHNOLOGIES TT215N22KOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 215A; BG-PB50-1; Ifsm: 7kA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 215A
Case: BG-PB50-1
Max. forward voltage: 1.8V
Max. forward impulse current: 7kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IRLHS6276TRPBF IRLHS6276TRPBF INFINEON TECHNOLOGIES irlhs6276pbf.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 12A; 4.5W; PQFN2X2
Case: PQFN2X2
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET x2
Kind of package: reel
Polarisation: unipolar
Power dissipation: 4.5W
Drain current: 12A
Drain-source voltage: 20V
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TLE8366EVXUMA1 INFINEON TECHNOLOGIES Infineon-TLE8366-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969d2def641fa Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
Produkt ist nicht verfügbar
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FF300R12KS4 FF300R12KS4 INFINEON TECHNOLOGIES FF300R12KS4-dte.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: AG-62MM-1
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Power dissipation: 1.95kW
Mechanical mounting: screw
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1+281.85 EUR
3+252.04 EUR
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CY8C24994-24LTXI CY8C24994-24LTXI INFINEON TECHNOLOGIES CY8C24794-24LTXI.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; QFN68; 1kBSRAM,16kBFLASH
Mounting: SMD
Clock frequency: 24MHz
Interface: GPIO; I2C; SPI; UART; USB 2.0
Type of integrated circuit: PSoC microcontroller
Case: QFN68
Operating temperature: -40...85°C
Supply voltage: 3...5.25V DC
Number of inputs/outputs: 56
Memory: 1kB SRAM; 16kB FLASH
Kind of core: 8-bit
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TT260N22KOFHOSA1 TT260N22KOFHOSA1 INFINEON TECHNOLOGIES TT260N22KOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 260A; BG-PB50AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 260A
Case: BG-PB50AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 8kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IPD90N04S404ATMA1 IPD90N04S404ATMA1 INFINEON TECHNOLOGIES IPD90N04S404.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 81A; Idm: 360A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: PG-TO252-3-313
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Drain current: 81A
Power dissipation: 71W
Pulsed drain current: 360A
Technology: OptiMOS™ T2
Gate charge: 20nC
auf Bestellung 2254 Stücke:
Lieferzeit 14-21 Tag (e)
46+1.57 EUR
59+1.23 EUR
67+1.07 EUR
74+0.97 EUR
Mindestbestellmenge: 46
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IPD90N04S4L04ATMA1 INFINEON TECHNOLOGIES Infineon-IPD90N04S4L_04-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291cab92685eaa&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 71W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: DPAK; TO252
On-state resistance: 3.2mΩ
Mounting: SMD
Kind of channel: enhancement
Drain current: 90A
Power dissipation: 71W
Application: automotive industry
Gate charge: 60nC
Produkt ist nicht verfügbar
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AUIRFN7107TR AUIRFN7107TR INFINEON TECHNOLOGIES auirfn7107.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 53A; 300W; PQFN5X6
Case: PQFN5X6
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET
Kind of package: reel
Polarisation: unipolar
Gate charge: 51nC
On-state resistance: 8.5mΩ
Gate-source voltage: ±20V
Drain current: 53A
Drain-source voltage: 75V
Power dissipation: 300W
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SPD50N03S207GBTMA1 SPD50N03S207GBTMA1 INFINEON TECHNOLOGIES SPD50N03S207G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 136W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1343 Stücke:
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103+0.7 EUR
106+0.67 EUR
112+0.64 EUR
116+0.62 EUR
500+0.6 EUR
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IPD050N03LGATMA1 IPD050N03LGATMA1 INFINEON TECHNOLOGIES IPD050N03LG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 68W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 1285 Stücke:
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50+1.43 EUR
104+0.69 EUR
127+0.57 EUR
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IPD50N03S4L06ATMA1 INFINEON TECHNOLOGIES INFNS15258-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 56W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 56W
Case: DPAK; TO252
On-state resistance: 4.9mΩ
Mounting: SMD
Gate charge: 31nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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BSC050N03LSGATMA1 BSC050N03LSGATMA1 INFINEON TECHNOLOGIES BSC050N03LSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 66A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 66A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSZ050N03LSGATMA1 BSZ050N03LSGATMA1 INFINEON TECHNOLOGIES BSZ050N03LSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPP050N03LF2SAKSA1 INFINEON TECHNOLOGIES Infineon-IPP050N03LF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101902fdfcd342466 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 53A; 65W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 53A
Power dissipation: 65W
Case: TO220-3
On-state resistance: 4.95mΩ
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC050N03MSGATMA1 BSC050N03MSGATMA1 INFINEON TECHNOLOGIES BSC050N03MSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 72A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 72A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSZ050N03MSGATMA1 BSZ050N03MSGATMA1 INFINEON TECHNOLOGIES BSZ050N03MSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IRS44273LTRPBF IRS44273LTRPBF INFINEON TECHNOLOGIES IRS44273LTRPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; SOT23-5
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SOT23-5
Supply voltage: 9.2...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Output current: -1.5...1.5A
Turn-on time: 50ns
Turn-off time: 50ns
Power: 0.25W
Topology: single transistor
Number of channels: 1
auf Bestellung 74 Stücke:
Lieferzeit 14-21 Tag (e)
74+0.97 EUR
Mindestbestellmenge: 74
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IPF016N10NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPF016N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f3f130b05e8a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 274A; 300W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 274A
Power dissipation: 300W
Case: D2PAK-7
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 161nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSB165N15NZ3GXUMA1 BSB165N15NZ3GXUMA1 INFINEON TECHNOLOGIES BSB165N15NZ3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 45A; 78W
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
On-state resistance: 16.5mΩ
Power dissipation: 78W
Gate-source voltage: ±20V
Drain current: 45A
Drain-source voltage: 150V
Polarisation: unipolar
Case: CanPAK™ MZ; MG-WDSON-2
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD640N06LGBTMA1 INFINEON TECHNOLOGIES IPD640N06L%2BG%2BRev1.4.pdf?fileId=db3a30431f848401011fcafb4ac00440&folderId=db3a30431ddc9372011ebafa04517f8b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS®; unipolar; 60V; 12A; Idm: 72A; 47W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 47W
Case: PG-TO252-3
On-state resistance: 64mΩ
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: OptiMOS®
Pulsed drain current: 72A
Produkt ist nicht verfügbar
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IMZ120R030M1HXKSA1 IMZ120R030M1HXKSA1 INFINEON TECHNOLOGIES Infineon-IMZ120R030M1H-DS-v01_01-EN.pdf?fileId=5546d46269e1c019016a92fdcc776696 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 150A; 114W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 45A
Pulsed drain current: 150A
Power dissipation: 114W
Case: TO247-4
Gate-source voltage: -7...23V
On-state resistance: 57mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
auf Bestellung 28 Stücke:
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3+26.93 EUR
Mindestbestellmenge: 3
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IR2132SPBF IR2132SPBF INFINEON TECHNOLOGIES IR2132JPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 675ns
Turn-off time: 475ns
auf Bestellung 24 Stücke:
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9+8.37 EUR
11+6.61 EUR
Mindestbestellmenge: 9
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IR2132JTRPBF INFINEON TECHNOLOGIES ir2130.pdf?fileId=5546d462533600a4015355c8757d169a Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; PLCC44; 200mA; Ch: 6; MOSFET; 10÷20V
Kind of integrated circuit: high-side; low-side
Case: PLCC44
Mounting: SMD
Operating temperature: -40...125°C
Output current: 0.2A
Number of channels: 6
Input voltage: 10...20V
Integrated circuit features: MOSFET
Type of integrated circuit: driver
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IR2132STRPBF INFINEON TECHNOLOGIES ir2130.pdf?fileId=5546d462533600a4015355c8757d169a Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 675ns
Turn-off time: 475ns
Produkt ist nicht verfügbar
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IRS21814STRPBF infineon-2ed2101s06f-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 240ns
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IRS2101STRPBF infineon-irs2101-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Mounting: SMD
Type of integrated circuit: driver
Produkt ist nicht verfügbar
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IRS2113MTRPBF irs2113mpbf.pdf?fileId=5546d462533600a40153567676a227b7
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
Produkt ist nicht verfügbar
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IRS2118SPBF irs2117pbf.pdf
IRS2118SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
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IRS21271STRPBF IRS212XXSTRPBf.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; current sensor,high-side; SO8; -600÷290mA; 625mW; Ch: 1
Number of channels: 1
Supply voltage: 9...20V DC
Kind of integrated circuit: current sensor; high-side
Voltage class: 600V
Type of integrated circuit: driver
Kind of package: reel; tape
Mounting: SMD
Case: SO8
Operating temperature: -40...125°C
Output current: -600...290mA
Turn-off time: 190ns
Turn-on time: 0.2µs
Power: 625mW
Produkt ist nicht verfügbar
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IRS2168DSTRPBF irs2168d.pdf?fileId=5546d462533600a401535676b78127d0
IRS2168DSTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; SO16; -260÷180mA; 1.4W; Ch: 2; 600V
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: ballast controller; gate driver; high-/low-side; PFC controller
Case: SO16
Output current: -260...180mA
Power: 1.4W
Number of channels: 2
Supply voltage: 11.5...16.6V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
Produkt ist nicht verfügbar
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IRS2183STRPBF irs2183.pdf?fileId=5546d462533600a401535676d20c27d8
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1.9A; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 1.9A
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Integrated circuit features: MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.46 EUR
Mindestbestellmenge: 2500
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IRS2117STRPBF irs2117pbf.pdf?fileId=5546d462533600a4015356767f2127b9
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side; SOIC8; 290mA; Ch: 1; MOSFET; Iout max: 290mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side
Case: SOIC8
Output current: 0.29A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...150°C
Power dissipation: 0.625W
Pulse fall time: 35ns
Impulse rise time: 75ns
Integrated circuit features: MOSFET
Maximum output current: 290mA
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.58 EUR
Mindestbestellmenge: 2500
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IRF7205TRPBF description irf7205pbf.pdf
IRF7205TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.6A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.6A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 2740 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
73+0.99 EUR
98+0.73 EUR
133+0.54 EUR
150+0.48 EUR
250+0.42 EUR
500+0.38 EUR
1000+0.34 EUR
2000+0.31 EUR
Mindestbestellmenge: 73
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IRF7201TRPBF description IRF7201TRPBF.pdf
IRF7201TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF7105TRPBF description irf7105pbf.pdf
IRF7105TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 25/-25V; 3.5/-2.3A; 2W; SO8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 25/-25V
Drain current: 3.5/-2.3A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.1/0.25Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 1994 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
80+0.9 EUR
103+0.7 EUR
147+0.49 EUR
173+0.41 EUR
250+0.33 EUR
500+0.29 EUR
1000+0.27 EUR
Mindestbestellmenge: 80
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IRF7101TRPBF irf7101pbf.pdf
IRF7101TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.5A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF7104TRPBF description irf7104pbf.pdf
IRF7104TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.3A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BC858CE6327 BC858CE6327.pdf
BC858CE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.15 EUR
Mindestbestellmenge: 10
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IR2109STRPBF IR21094SPBF.pdf
IR2109STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V DC
Output current: -250...120mA
Turn-off time: 200ns
Power: 625mW
Voltage class: 600V
Turn-on time: 750ns
auf Bestellung 3599 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
51+1.42 EUR
57+1.26 EUR
65+1.12 EUR
69+1.04 EUR
71+1.02 EUR
Mindestbestellmenge: 51
Im Einkaufswagen  Stück im Wert von  UAH
IR21094STRPBF IR21094SPBF.pdf
IR21094STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Mounting: SMD
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Type of integrated circuit: driver
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -250...120mA
Turn-off time: 200ns
Turn-on time: 750ns
Number of channels: 2
Power: 1W
Supply voltage: 10...20V DC
Voltage class: 600V
auf Bestellung 1179 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+1.99 EUR
48+1.5 EUR
53+1.37 EUR
55+1.3 EUR
100+1.23 EUR
250+1.19 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
IR21094SPBF IR21094SPBF.pdf
IR21094SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Mounting: SMD
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Type of integrated circuit: driver
Kind of package: tube
Operating temperature: -40...125°C
Output current: -250...120mA
Turn-off time: 200ns
Turn-on time: 750ns
Number of channels: 2
Power: 1W
Supply voltage: 10...20V DC
Voltage class: 600V
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.51 EUR
Mindestbestellmenge: 11
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IR21084STRPBF ir2108.pdf?fileId=5546d462533600a4015355c7dc321676
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC14; 350mA; Ch: 2; MOSFET; 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC14
Output current: 0.35A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Produkt ist nicht verfügbar
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TLE6232GPAUMA2 TLE6232GP.pdf
TLE6232GPAUMA2
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.55÷1.1A; Ch: 6; N-Channel; SMD; FLEX
Type of integrated circuit: power switch
Supply voltage: 4.5...5.5V DC
Case: PG-DSO-36
Mounting: SMD
Operating temperature: -40...150°C
Turn-off time: 10µs
Turn-on time: 10µs
Output current: 0.55...1.1A
Kind of integrated circuit: low-side
Kind of output: N-Channel
Technology: FLEX
Number of channels: 6
Produkt ist nicht verfügbar
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CY8C4245AXI-483 CY8C4244LQI-443.pdf
CY8C4245AXI-483
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP44; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 36
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 48MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY8C4125AXI-483 CY8C4124AXI-443.pdf
CY8C4125AXI-483
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 36
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 24MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY8C27543-24AXI description CY8C27x43_38-12012.pdf
CY8C27543-24AXI
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 256BSRAM,16kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 40
Supply voltage: 3...5.25V DC
Memory: 256B SRAM; 16kB FLASH
Clock frequency: 24MHz
Kind of core: 8-bit
Interface: I2C; SPI; UART
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY8C4124AXI-443 CY8C4124AXI-443.pdf
CY8C4124AXI-443
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,16kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 36
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 16kB FLASH
Clock frequency: 24MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY8C4125AXI-473 CY8C4124AXI-443.pdf
CY8C4125AXI-473
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 36
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 24MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY8C4125AXQ-483 CY8C4124AXI-443.pdf
CY8C4125AXQ-483
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 36
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 24MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY8C4147AXI-S453 CY8C4147AXI-S453.pdf
CY8C4147AXI-S453
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP44; 16kBSRAM,128kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 36
Supply voltage: 1.71...5.5V DC
Memory: 16kB SRAM; 128kB FLASH
Clock frequency: 48MHz
Kind of core: 32-bit
Integrated circuit features: CapSense
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY8C4245AXI-473 CY8C4244LQI-443.pdf
CY8C4245AXI-473
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP44; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 36
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 48MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY8C4245AZI-M443 CY8C4245AZI-M443.pdf
CY8C4245AZI-M443
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP44; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 38
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 48MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF4104PBF description irf4104.pdf
IRF4104PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 68nC
Kind of package: tube
auf Bestellung 125 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.83 EUR
57+1.27 EUR
66+1.09 EUR
100+1 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
IPP041N04NGXKSA1 IPP041N04NG-DTE.pdf
IPP041N04NGXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 94W; PG-TO220-3
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Case: PG-TO220-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 4.1mΩ
Power dissipation: 94W
Drain current: 80A
Gate-source voltage: ±20V
Drain-source voltage: 40V
auf Bestellung 176 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
43+1.7 EUR
75+0.96 EUR
84+0.86 EUR
91+0.79 EUR
100+0.72 EUR
Mindestbestellmenge: 43
Im Einkaufswagen  Stück im Wert von  UAH
IRF40H233XTMA1 Infineon-IRF40H233-DS-v01_00-EN.pdf?fileId=5546d462689a790c0168a1d5500962d9
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; StrongIRFET™; unipolar; 40V; 32A; 50W
Type of transistor: N-MOSFET x2
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 32A
Pulsed drain current: 140A
Power dissipation: 50W
Case: PQFN5X6
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AUIRF4104STRL auirf4104.pdf
AUIRF4104STRL
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 68nC
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS3007ARPPE6327HTSA1 BAS3007ARPPE6327.pdf
BAS3007ARPPE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 30V; If: 0.9A; Ifsm: 5A; SOT143; SMT
Case: SOT143
Kind of package: reel; tape
Electrical mounting: SMT
Features of semiconductor devices: Schottky
Type of bridge rectifier: single-phase
Load current: 0.9A
Max. forward impulse current: 5A
Max. off-state voltage: 30V
auf Bestellung 2060 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
146+0.49 EUR
163+0.44 EUR
226+0.32 EUR
500+0.27 EUR
1000+0.25 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
BAS3005B02VH6327XTSA1 BAS3005B02VH6327XT.pdf
BAS3005B02VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 30V; 0.5A
Mounting: SMD
Case: SC79
Max. forward impulse current: 5A
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Max. off-state voltage: 30V
Type of diode: Schottky switching
auf Bestellung 1520 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
410+0.17 EUR
532+0.13 EUR
625+0.11 EUR
Mindestbestellmenge: 358
Im Einkaufswagen  Stück im Wert von  UAH
S29AL008J70TFI010 Infineon-S29AL008J_8_Mbit_(1M_x_8_Bit_512K_x_16_Bit)_3_V_Boot_Sector_Flash-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6a3835734&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
S29AL008J70TFI010
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; TSSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 8Mb FLASH
Interface: CFI; parallel
Kind of interface: parallel
Mounting: SMD
Case: TSSOP48
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
auf Bestellung 1049 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.66 EUR
Mindestbestellmenge: 20
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TT215N22KOF TT215N22KOF.pdf
TT215N22KOF
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 215A; BG-PB50-1; Ifsm: 7kA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 215A
Case: BG-PB50-1
Max. forward voltage: 1.8V
Max. forward impulse current: 7kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IRLHS6276TRPBF irlhs6276pbf.pdf
IRLHS6276TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 12A; 4.5W; PQFN2X2
Case: PQFN2X2
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET x2
Kind of package: reel
Polarisation: unipolar
Power dissipation: 4.5W
Drain current: 12A
Drain-source voltage: 20V
Produkt ist nicht verfügbar
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TLE8366EVXUMA1 Infineon-TLE8366-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969d2def641fa
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
Produkt ist nicht verfügbar
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FF300R12KS4 FF300R12KS4-dte.pdf
FF300R12KS4
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: AG-62MM-1
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Power dissipation: 1.95kW
Mechanical mounting: screw
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+281.85 EUR
3+252.04 EUR
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CY8C24994-24LTXI CY8C24794-24LTXI.pdf
CY8C24994-24LTXI
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; QFN68; 1kBSRAM,16kBFLASH
Mounting: SMD
Clock frequency: 24MHz
Interface: GPIO; I2C; SPI; UART; USB 2.0
Type of integrated circuit: PSoC microcontroller
Case: QFN68
Operating temperature: -40...85°C
Supply voltage: 3...5.25V DC
Number of inputs/outputs: 56
Memory: 1kB SRAM; 16kB FLASH
Kind of core: 8-bit
Produkt ist nicht verfügbar
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TT260N22KOFHOSA1 TT260N22KOF.pdf
TT260N22KOFHOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 260A; BG-PB50AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 260A
Case: BG-PB50AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 8kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IPD90N04S404ATMA1 IPD90N04S404.pdf
IPD90N04S404ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 81A; Idm: 360A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: PG-TO252-3-313
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Drain current: 81A
Power dissipation: 71W
Pulsed drain current: 360A
Technology: OptiMOS™ T2
Gate charge: 20nC
auf Bestellung 2254 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
46+1.57 EUR
59+1.23 EUR
67+1.07 EUR
74+0.97 EUR
Mindestbestellmenge: 46
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IPD90N04S4L04ATMA1 Infineon-IPD90N04S4L_04-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291cab92685eaa&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 71W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: DPAK; TO252
On-state resistance: 3.2mΩ
Mounting: SMD
Kind of channel: enhancement
Drain current: 90A
Power dissipation: 71W
Application: automotive industry
Gate charge: 60nC
Produkt ist nicht verfügbar
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AUIRFN7107TR auirfn7107.pdf
AUIRFN7107TR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 53A; 300W; PQFN5X6
Case: PQFN5X6
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET
Kind of package: reel
Polarisation: unipolar
Gate charge: 51nC
On-state resistance: 8.5mΩ
Gate-source voltage: ±20V
Drain current: 53A
Drain-source voltage: 75V
Power dissipation: 300W
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SPD50N03S207GBTMA1 SPD50N03S207G-DTE.pdf
SPD50N03S207GBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 136W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1343 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
103+0.7 EUR
106+0.67 EUR
112+0.64 EUR
116+0.62 EUR
500+0.6 EUR
Mindestbestellmenge: 103
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IPD050N03LGATMA1 IPD050N03LG-DTE.pdf
IPD050N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 68W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 1285 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.43 EUR
104+0.69 EUR
127+0.57 EUR
Mindestbestellmenge: 50
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IPD50N03S4L06ATMA1 INFNS15258-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 56W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 56W
Case: DPAK; TO252
On-state resistance: 4.9mΩ
Mounting: SMD
Gate charge: 31nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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BSC050N03LSGATMA1 BSC050N03LSG-DTE.pdf
BSC050N03LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 66A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 66A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSZ050N03LSGATMA1 BSZ050N03LSG-DTE.pdf
BSZ050N03LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPP050N03LF2SAKSA1 Infineon-IPP050N03LF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101902fdfcd342466
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 53A; 65W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 53A
Power dissipation: 65W
Case: TO220-3
On-state resistance: 4.95mΩ
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC050N03MSGATMA1 BSC050N03MSG-DTE.pdf
BSC050N03MSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 72A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 72A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSZ050N03MSGATMA1 BSZ050N03MSG-DTE.pdf
BSZ050N03MSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IRS44273LTRPBF IRS44273LTRPBF.pdf
IRS44273LTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; SOT23-5
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SOT23-5
Supply voltage: 9.2...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Output current: -1.5...1.5A
Turn-on time: 50ns
Turn-off time: 50ns
Power: 0.25W
Topology: single transistor
Number of channels: 1
auf Bestellung 74 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
74+0.97 EUR
Mindestbestellmenge: 74
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IPF016N10NF2SATMA1 Infineon-IPF016N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f3f130b05e8a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 274A; 300W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 274A
Power dissipation: 300W
Case: D2PAK-7
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 161nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSB165N15NZ3GXUMA1 BSB165N15NZ3G-DTE.pdf
BSB165N15NZ3GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 45A; 78W
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
On-state resistance: 16.5mΩ
Power dissipation: 78W
Gate-source voltage: ±20V
Drain current: 45A
Drain-source voltage: 150V
Polarisation: unipolar
Case: CanPAK™ MZ; MG-WDSON-2
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD640N06LGBTMA1 IPD640N06L%2BG%2BRev1.4.pdf?fileId=db3a30431f848401011fcafb4ac00440&folderId=db3a30431ddc9372011ebafa04517f8b
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS®; unipolar; 60V; 12A; Idm: 72A; 47W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 47W
Case: PG-TO252-3
On-state resistance: 64mΩ
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: OptiMOS®
Pulsed drain current: 72A
Produkt ist nicht verfügbar
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IMZ120R030M1HXKSA1 Infineon-IMZ120R030M1H-DS-v01_01-EN.pdf?fileId=5546d46269e1c019016a92fdcc776696
IMZ120R030M1HXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 150A; 114W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 45A
Pulsed drain current: 150A
Power dissipation: 114W
Case: TO247-4
Gate-source voltage: -7...23V
On-state resistance: 57mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+26.93 EUR
Mindestbestellmenge: 3
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IR2132SPBF description IR2132JPBF.pdf
IR2132SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 675ns
Turn-off time: 475ns
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.37 EUR
11+6.61 EUR
Mindestbestellmenge: 9
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IR2132JTRPBF ir2130.pdf?fileId=5546d462533600a4015355c8757d169a
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; PLCC44; 200mA; Ch: 6; MOSFET; 10÷20V
Kind of integrated circuit: high-side; low-side
Case: PLCC44
Mounting: SMD
Operating temperature: -40...125°C
Output current: 0.2A
Number of channels: 6
Input voltage: 10...20V
Integrated circuit features: MOSFET
Type of integrated circuit: driver
Produkt ist nicht verfügbar
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IR2132STRPBF ir2130.pdf?fileId=5546d462533600a4015355c8757d169a
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 675ns
Turn-off time: 475ns
Produkt ist nicht verfügbar
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