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IPA60R1K0CEXKSA1 INFINEON TECHNOLOGIES Infineon-IPA60R1K0CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537a8be0c671ef Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.8A; 26W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.8A
Power dissipation: 26W
Case: TO220FP
On-state resistance: 860mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 13nC
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IPA60R250CPXKSA1 IPA60R250CPXKSA1 INFINEON TECHNOLOGIES IPA60R250CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R280P7SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA60R280P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d3c00794f033f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 24W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 24W
Case: TO220FP
On-state resistance: 214mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 18nC
Produkt ist nicht verfügbar
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IPA60R330P6XKSA1 IPA60R330P6XKSA1 INFINEON TECHNOLOGIES IPA60R330P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R380E6XKSA1 IPA60R380E6XKSA1 INFINEON TECHNOLOGIES IPA60R380E6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPA60R600E6XKSA1 IPA60R600E6XKSA1 INFINEON TECHNOLOGIES IPA60R600E6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; 29W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 29W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPA60R600P7SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA60R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d3b403a7a02ca Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 21W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 21W
Case: TO220FP
On-state resistance: 0.49Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 9nC
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IPA60R600P7SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA60R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d3b403a7a02ca Category: THT N channel transistors
Description: Transistor: N-MOSFET; 600V; 6A; Idm: 6A; 21W; TO220FP
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 21W
Case: TO220FP
Gate-source voltage: 20V
On-state resistance: 0.49Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 9nC
Pulsed drain current: 6A
auf Bestellung 2004 Stücke:
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200+0.43 EUR
Mindestbestellmenge: 200
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IPP60R190P6XKSA1 IPP60R190P6XKSA1 INFINEON TECHNOLOGIES IPP60R190P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 431 Stücke:
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43+1.67 EUR
50+1.59 EUR
100+1.44 EUR
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IPW60R190C6FKSA1 IPW60R190C6FKSA1 INFINEON TECHNOLOGIES IPW60R190C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 140 Stücke:
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18+4.06 EUR
22+3.36 EUR
30+2.95 EUR
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IPP60R190C6XKSA1 IPP60R190C6XKSA1 INFINEON TECHNOLOGIES IPP60R190C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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19+3.93 EUR
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IPW60R190P6FKSA1 IPW60R190P6FKSA1 INFINEON TECHNOLOGIES IPW60R190P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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14+5.36 EUR
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IPI60R190C6XKSA1 IPI60R190C6XKSA1 INFINEON TECHNOLOGIES IPI60R190C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of channel: enhancement
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11+6.51 EUR
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IPB60R190C6ATMA1 IPB60R190C6ATMA1 INFINEON TECHNOLOGIES IPW60R190C6_2_1.pdf?folderId=db3a30431ff98815012019af55de3f2c&fileId=db3a304320d39d590121f895e912201a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
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IPP60R190E6XKSA1 IPP60R190E6XKSA1 INFINEON TECHNOLOGIES IPP60R190E6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R190E6FKSA1 IPW60R190E6FKSA1 INFINEON TECHNOLOGIES IPW60R190E6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPDD60R190G7XTMA1 INFINEON TECHNOLOGIES IPDD60R190G7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 13A; Idm: 36A
Type of transistor: N-MOSFET
Technology: CoolMOS™ G7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 76W
Case: PG-HDSOP-10-1
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 18nC
Pulsed drain current: 36A
Produkt ist nicht verfügbar
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ITS4142N ITS4142N INFINEON TECHNOLOGIES ITS4142N.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.2Ω
Supply voltage: 12...45V DC
Operating temperature: -30...85°C
Power dissipation: 1.4W
Turn-off time: 0.1ms
Turn-on time: 150µs
Kind of package: reel; tape
Technology: Industrial PROFET
auf Bestellung 3031 Stücke:
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22+3.4 EUR
33+2.23 EUR
36+2.03 EUR
100+1.74 EUR
250+1.56 EUR
500+1.42 EUR
1000+1.36 EUR
Mindestbestellmenge: 22
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ITS4130QEPDXUMA1 INFINEON TECHNOLOGIES ITS4130QEPD.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.25A; Ch: 4; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.25A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: PG-TSDSO-14
On-state resistance: 0.13Ω
Supply voltage: 5...45V DC
Operating temperature: -40...150°C
Power dissipation: 1.8W
Turn-off time: 75µs
Turn-on time: 75µs
Kind of package: reel; tape
Technology: Industrial PROFET
Produkt ist nicht verfügbar
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IPB011N04NGATMA1 IPB011N04NGATMA1 INFINEON TECHNOLOGIES IPB011N04NG-dte.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPB011N04LGATMA1 IPB011N04LGATMA1 INFINEON TECHNOLOGIES IPB011N04LG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BB640E6327HTSA1 BB640E6327HTSA1 INFINEON TECHNOLOGIES BB640E-DTE.pdf Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape
Mounting: SMD
Features of semiconductor devices: RF
Semiconductor structure: single diode
Type of diode: varicap
Capacitance: 2.8...76pF
Leakage current: 0.2µA
Load current: 20mA
Max. off-state voltage: 30V
Kind of package: reel; tape
Case: SOD323
auf Bestellung 897 Stücke:
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200+0.36 EUR
295+0.24 EUR
332+0.22 EUR
443+0.16 EUR
496+0.14 EUR
569+0.13 EUR
Mindestbestellmenge: 200
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FM24V10-G FM24V10-G INFINEON TECHNOLOGIES FM24V10-DTE.pdf Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; I2C; 128kx8bit; 2÷3.6VDC; 3.4MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 1Mb FRAM
Interface: I2C
Memory organisation: 128kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 3.4MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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FM24V10-GTR FM24V10-GTR INFINEON TECHNOLOGIES FM24V10-DTE.pdf Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; I2C; 128kx8bit; 2÷3.6VDC; 3.4MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 1Mb FRAM
Interface: I2C
Memory organisation: 128kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 3.4MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
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FM31256-G FM31256-G INFINEON TECHNOLOGIES FM3164_31256-DTE.pdf Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; I2C; 32kx8bit; 2.7÷5.5VDC; 1MHz; SO14
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: I2C
Memory organisation: 32kx8bit
Supply voltage: 2.7...5.5V DC
Clock frequency: 1MHz
Case: SO14
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Integrated circuit features: RTC; watchdog
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IDP30E65D1XKSA1 IDP30E65D1XKSA1 INFINEON TECHNOLOGIES Infineon-IDP30E65D1-DS-v02_01-EN.pdf?fileId=5546d4624933b87501493816a4eb19a2 Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 30A; tube; Ifsm: 90A; TO220-2; 143W
Max. off-state voltage: 650V
Max. forward voltage: 1.35V
Load current: 30A
Max. forward impulse current: 90A
Case: TO220-2
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Power dissipation: 143W
Kind of package: tube
Type of diode: rectifying
Mounting: THT
auf Bestellung 73 Stücke:
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31+2.35 EUR
41+1.74 EUR
47+1.53 EUR
53+1.37 EUR
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BFP420H6327XTSA1 BFP420H6327XTSA1 INFINEON TECHNOLOGIES BFP420.pdf Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 60mA; 0.21W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.5V
Collector current: 60mA
Power dissipation: 0.21W
Case: SOT343
Current gain: 60...130
Mounting: SMD
Kind of package: reel; tape
Frequency: 25GHz
auf Bestellung 4949 Stücke:
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278+0.26 EUR
285+0.25 EUR
296+0.24 EUR
Mindestbestellmenge: 278
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BFP460H6327XTSA1 BFP460H6327XTSA1 INFINEON TECHNOLOGIES Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920 Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 70mA; 0.23W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.5V
Collector current: 70mA
Power dissipation: 0.23W
Case: SOT343
Current gain: 90...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 22GHz
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BFP420FH6327XTSA1 INFINEON TECHNOLOGIES BFP420F.pdf Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 60mA; 0.21W; TSFP-4
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.5V
Collector current: 60mA
Power dissipation: 0.21W
Case: TSFP-4
Current gain: 60...130
Mounting: SMD
Kind of package: reel; tape
Frequency: 25GHz
Produkt ist nicht verfügbar
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BFP410H6327XTSA1 INFINEON TECHNOLOGIES Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 4.5V; 40mA; 150mW; SOT343
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 4.5V
Collector current: 40mA
Power dissipation: 0.15W
Case: SOT343
Current gain: 60
Mounting: SMD
Frequency: 25GHz
Application: automotive industry
Produkt ist nicht verfügbar
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ESD101B102ELSE6327XTSA1 ESD101B102ELSE6327XTSA1 INFINEON TECHNOLOGIES ESD101B102ELSE6327XTSA1.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 30W; 6.1V; 2A; bidirectional; TSSLP-2-4; reel,tape
Mounting: SMD
Leakage current: 20nA
Max. forward impulse current: 2A
Max. off-state voltage: 5.5V
Breakdown voltage: 6.1V
Peak pulse power dissipation: 30W
Semiconductor structure: bidirectional
Version: ESD
Kind of package: reel; tape
Type of diode: TVS
Case: TSSLP-2-4
auf Bestellung 8196 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
596+0.12 EUR
695+0.1 EUR
807+0.089 EUR
Mindestbestellmenge: 500
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IPT007N06NATMA1 IPT007N06NATMA1 INFINEON TECHNOLOGIES IPT007N06N-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; Idm: 1200A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 0.7mΩ
Mounting: SMD
Gate charge: 216nC
Kind of package: tape
Kind of channel: enhancement
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BFP650H6327 BFP650H6327 INFINEON TECHNOLOGIES BFP650H6327-DTE.pdf Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; RF; 13V; 0.15A; 0.5W; SOT343
Mounting: SMD
Case: SOT343
Kind of package: reel; tape
Frequency: 42GHz
Kind of transistor: RF
Type of transistor: NPN
Technology: SiGe:C
Collector current: 0.15A
Power dissipation: 0.5W
Collector-emitter voltage: 13V
Polarisation: bipolar
auf Bestellung 2568 Stücke:
Lieferzeit 14-21 Tag (e)
90+0.8 EUR
124+0.58 EUR
141+0.51 EUR
157+0.46 EUR
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BFP650FH6327 BFP650FH6327 INFINEON TECHNOLOGIES BFP650FH6327-dte.pdf Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; RF; 13V; 0.15A; 0.5W; TSFP-4
Mounting: SMD
Case: TSFP-4
Kind of package: reel; tape
Frequency: 42GHz
Kind of transistor: RF
Type of transistor: NPN
Technology: SiGe:C
Collector current: 0.15A
Power dissipation: 0.5W
Collector-emitter voltage: 13V
Polarisation: bipolar
auf Bestellung 1432 Stücke:
Lieferzeit 14-21 Tag (e)
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218+0.33 EUR
229+0.31 EUR
240+0.3 EUR
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BSC018N04LSGATMA1 BSC018N04LSGATMA1 INFINEON TECHNOLOGIES BSC018N04LSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 125W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: SMD
Kind of channel: enhancement
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ESD5V3U2U03LRHE6327XTMA1 INFINEON TECHNOLOGIES esd5v3u2useries.pdf?folderId=db3a30431441fb5d011488a9e66f0ded&fileId=db3a30431b0626df011b0d3e3ca97dc0 Category: Protection diodes - arrays
Description: Diode: TVS array; 3A; unidirectional,common anode; TSLP-3-7
Type of diode: TVS array
Max. off-state voltage: 5.3V
Semiconductor structure: common anode; unidirectional
Case: TSLP-3-7
Mounting: SMD
Kind of package: reel; tape
Leakage current: 50nA
Max. forward impulse current: 3A
Produkt ist nicht verfügbar
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BSC066N06NSATMA1 BSC066N06NSATMA1 INFINEON TECHNOLOGIES BSC066N06NS-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 64A; 46W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 64A
Power dissipation: 46W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DD100N16S DD100N16S INFINEON TECHNOLOGIES DD100N16S.pdf Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 130A; BG-SB20-1; screw
Semiconductor structure: double series
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.6V
Load current: 130A
Max. forward impulse current: 2.5kA
Max. off-state voltage: 1.6kV
Case: BG-SB20-1
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
2+42.53 EUR
3+37.25 EUR
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CY7C1018DV33-10VXI INFINEON TECHNOLOGIES Infineon-CY7C1018DV33_CY7C1019DV33_1-Mbit_(128_K_8)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2ee5537e7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory
Type of integrated circuit: SRAM memory
Produkt ist nicht verfügbar
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IPD60R650CEAUMA1 IPD60R650CEAUMA1 INFINEON TECHNOLOGIES Infineon-IPA60R650CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c851db3d1f55 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 19A; 82W
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.2A
Power dissipation: 82W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 19A
Gate charge: 20.5nC
auf Bestellung 2167 Stücke:
Lieferzeit 14-21 Tag (e)
81+0.89 EUR
90+0.8 EUR
101+0.71 EUR
102+0.7 EUR
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IPD65R380E6ATMA1 IPD65R380E6ATMA1 INFINEON TECHNOLOGIES IPD65R380E6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD65R420CFDBTMA1 IPD65R420CFDBTMA1 INFINEON TECHNOLOGIES IPD65R420CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.7A
On-state resistance: 0.42Ω
Gate-source voltage: ±20V
Power dissipation: 83.3W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R400CEAUMA1 INFINEON TECHNOLOGIES Infineon-IPD65R400CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401539eb64cd44f67 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 9.5A; Idm: 30A; 118W; PG-TO252
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 9.5A
On-state resistance: 0.4Ω
Gate-source voltage: ±20V
Power dissipation: 118W
Pulsed drain current: 30A
Technology: CoolMOS™ CE
Case: PG-TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R650CEAUMA1 INFINEON TECHNOLOGIES Infineon-IPD65R650CE-DS-v02_00-EN.pdf?fileId=5546d4624d6fc3d5014d7220d45a1844 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.1A; 86W; DPAK,TO252
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.1A
Gate charge: 23nC
On-state resistance: 0.54Ω
Power dissipation: 86W
Case: DPAK; TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD650P06NMATMA1 INFINEON TECHNOLOGIES Infineon-IPD650P06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a03e2db2100b1 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -22A; 83W; DPAK,TO252
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -22A
Gate charge: 39nC
On-state resistance: 65mΩ
Power dissipation: 83W
Case: DPAK; TO252
Kind of channel: enhancement
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
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IPD65R1K4CFDBTMA1 IPD65R1K4CFDBTMA1 INFINEON TECHNOLOGIES IPD65R1K4CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.8A; 28.4W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.8A
On-state resistance: 1.4Ω
Gate-source voltage: ±20V
Power dissipation: 28.4W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R225C7ATMA1 IPD65R225C7ATMA1 INFINEON TECHNOLOGIES IPD65R225C7-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 63W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
On-state resistance: 0.225Ω
Gate-source voltage: ±20V
Power dissipation: 63W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R250C6XTMA1 IPD65R250C6XTMA1 INFINEON TECHNOLOGIES IPD65R250C6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208.3W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16.1A
On-state resistance: 0.25Ω
Gate-source voltage: ±20V
Power dissipation: 208.3W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R250E6XTMA1 IPD65R250E6XTMA1 INFINEON TECHNOLOGIES IPD65R250E6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16.1A
On-state resistance: 0.25Ω
Gate-source voltage: ±20V
Power dissipation: 208W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R380E6BTMA1 IPD65R380E6BTMA1 INFINEON TECHNOLOGIES IPD65R380E6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD65R420CFDATMA1 IPD65R420CFDATMA1 INFINEON TECHNOLOGIES IPD65R420CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.7A
On-state resistance: 0.42Ω
Gate-source voltage: ±20V
Power dissipation: 83.3W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R600E6ATMA1 IPD65R600E6ATMA1 INFINEON TECHNOLOGIES IPD65R600E6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.3A
On-state resistance: 0.6Ω
Gate-source voltage: ±20V
Power dissipation: 63W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R600E6BTMA1 IPD65R600E6BTMA1 INFINEON TECHNOLOGIES IPD65R600E6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.3A
On-state resistance: 0.6Ω
Gate-source voltage: ±20V
Power dissipation: 63W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R660CFDATMA1 IPD65R660CFDATMA1 INFINEON TECHNOLOGIES IPD65R660CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
On-state resistance: 0.66Ω
Gate-source voltage: ±20V
Power dissipation: 62.5W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R660CFDBTMA1 IPD65R660CFDBTMA1 INFINEON TECHNOLOGIES IPD65R660CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
On-state resistance: 0.66Ω
Gate-source voltage: ±20V
Power dissipation: 62.5W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R950CFDATMA1 IPD65R950CFDATMA1 INFINEON TECHNOLOGIES IPD65R950CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; 36.7W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
On-state resistance: 0.95Ω
Gate-source voltage: ±20V
Power dissipation: 36.7W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R950CFDBTMA1 IPD65R950CFDBTMA1 INFINEON TECHNOLOGIES IPD65R950CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; 36.7W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
On-state resistance: 0.95Ω
Gate-source voltage: ±20V
Power dissipation: 36.7W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPP60R120P7 IPP60R120P7 INFINEON TECHNOLOGIES IPP60R120P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 95W
Case: PG-TO220-3
On-state resistance: 0.12Ω
Mounting: THT
Kind of channel: enhancement
Technology: CoolMOS™ P7
Kind of package: tube
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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IPB60R120P7ATMA1 IPB60R120P7ATMA1 INFINEON TECHNOLOGIES IPB60R120P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 95W
Case: D2PAK
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 36nC
Kind of channel: enhancement
Technology: CoolMOS™ P7
Kind of package: reel
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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XC886C6FFI5VACFXUMA1 XC886C6FFI5VACFXUMA1 INFINEON TECHNOLOGIES XC88X-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: CAN x2,SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: CAN x2; SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 24kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Kind of core: 8-bit
Produkt ist nicht verfügbar
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IPA60R1K0CEXKSA1 Infineon-IPA60R1K0CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537a8be0c671ef
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.8A; 26W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.8A
Power dissipation: 26W
Case: TO220FP
On-state resistance: 860mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 13nC
Produkt ist nicht verfügbar
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IPA60R250CPXKSA1 IPA60R250CP-DTE.pdf
IPA60R250CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R280P7SXKSA1 Infineon-IPA60R280P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d3c00794f033f
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 24W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 24W
Case: TO220FP
On-state resistance: 214mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 18nC
Produkt ist nicht verfügbar
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IPA60R330P6XKSA1 IPA60R330P6-DTE.pdf
IPA60R330P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R380E6XKSA1 IPA60R380E6-DTE.pdf
IPA60R380E6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R600E6XKSA1 IPA60R600E6-DTE.pdf
IPA60R600E6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; 29W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 29W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R600P7SXKSA1 Infineon-IPA60R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d3b403a7a02ca
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 21W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 21W
Case: TO220FP
On-state resistance: 0.49Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 9nC
Produkt ist nicht verfügbar
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IPA60R600P7SXKSA1 Infineon-IPA60R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d3b403a7a02ca
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 600V; 6A; Idm: 6A; 21W; TO220FP
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 21W
Case: TO220FP
Gate-source voltage: 20V
On-state resistance: 0.49Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 9nC
Pulsed drain current: 6A
auf Bestellung 2004 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.43 EUR
Mindestbestellmenge: 200
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IPP60R190P6XKSA1 IPP60R190P6-DTE.pdf
IPP60R190P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 431 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.82 EUR
43+1.67 EUR
50+1.59 EUR
100+1.44 EUR
Mindestbestellmenge: 40
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IPW60R190C6FKSA1 IPW60R190C6-DTE.pdf
IPW60R190C6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 140 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.32 EUR
18+4.06 EUR
22+3.36 EUR
30+2.95 EUR
Mindestbestellmenge: 17
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IPP60R190C6XKSA1 IPP60R190C6-DTE.pdf
IPP60R190C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.93 EUR
Mindestbestellmenge: 19
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IPW60R190P6FKSA1 IPW60R190P6-DTE.pdf
IPW60R190P6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.36 EUR
Mindestbestellmenge: 14
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IPI60R190C6XKSA1 IPI60R190C6-DTE.pdf
IPI60R190C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of channel: enhancement
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.51 EUR
Mindestbestellmenge: 11
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IPB60R190C6ATMA1 IPW60R190C6_2_1.pdf?folderId=db3a30431ff98815012019af55de3f2c&fileId=db3a304320d39d590121f895e912201a
IPB60R190C6ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP60R190E6XKSA1 IPP60R190E6-DTE.pdf
IPP60R190E6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R190E6FKSA1 IPW60R190E6-DTE.pdf
IPW60R190E6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPDD60R190G7XTMA1 IPDD60R190G7.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 13A; Idm: 36A
Type of transistor: N-MOSFET
Technology: CoolMOS™ G7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 76W
Case: PG-HDSOP-10-1
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 18nC
Pulsed drain current: 36A
Produkt ist nicht verfügbar
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ITS4142N ITS4142N.pdf
ITS4142N
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.2Ω
Supply voltage: 12...45V DC
Operating temperature: -30...85°C
Power dissipation: 1.4W
Turn-off time: 0.1ms
Turn-on time: 150µs
Kind of package: reel; tape
Technology: Industrial PROFET
auf Bestellung 3031 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.4 EUR
33+2.23 EUR
36+2.03 EUR
100+1.74 EUR
250+1.56 EUR
500+1.42 EUR
1000+1.36 EUR
Mindestbestellmenge: 22
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ITS4130QEPDXUMA1 ITS4130QEPD.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.25A; Ch: 4; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.25A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: PG-TSDSO-14
On-state resistance: 0.13Ω
Supply voltage: 5...45V DC
Operating temperature: -40...150°C
Power dissipation: 1.8W
Turn-off time: 75µs
Turn-on time: 75µs
Kind of package: reel; tape
Technology: Industrial PROFET
Produkt ist nicht verfügbar
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IPB011N04NGATMA1 IPB011N04NG-dte.pdf
IPB011N04NGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPB011N04LGATMA1 IPB011N04LG-DTE.pdf
IPB011N04LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 250W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BB640E6327HTSA1 BB640E-DTE.pdf
BB640E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape
Mounting: SMD
Features of semiconductor devices: RF
Semiconductor structure: single diode
Type of diode: varicap
Capacitance: 2.8...76pF
Leakage current: 0.2µA
Load current: 20mA
Max. off-state voltage: 30V
Kind of package: reel; tape
Case: SOD323
auf Bestellung 897 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
295+0.24 EUR
332+0.22 EUR
443+0.16 EUR
496+0.14 EUR
569+0.13 EUR
Mindestbestellmenge: 200
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FM24V10-G FM24V10-DTE.pdf
FM24V10-G
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; I2C; 128kx8bit; 2÷3.6VDC; 3.4MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 1Mb FRAM
Interface: I2C
Memory organisation: 128kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 3.4MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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FM24V10-GTR FM24V10-DTE.pdf
FM24V10-GTR
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; I2C; 128kx8bit; 2÷3.6VDC; 3.4MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 1Mb FRAM
Interface: I2C
Memory organisation: 128kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 3.4MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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FM31256-G FM3164_31256-DTE.pdf
FM31256-G
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; I2C; 32kx8bit; 2.7÷5.5VDC; 1MHz; SO14
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: I2C
Memory organisation: 32kx8bit
Supply voltage: 2.7...5.5V DC
Clock frequency: 1MHz
Case: SO14
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Integrated circuit features: RTC; watchdog
Produkt ist nicht verfügbar
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IDP30E65D1XKSA1 Infineon-IDP30E65D1-DS-v02_01-EN.pdf?fileId=5546d4624933b87501493816a4eb19a2
IDP30E65D1XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 30A; tube; Ifsm: 90A; TO220-2; 143W
Max. off-state voltage: 650V
Max. forward voltage: 1.35V
Load current: 30A
Max. forward impulse current: 90A
Case: TO220-2
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Power dissipation: 143W
Kind of package: tube
Type of diode: rectifying
Mounting: THT
auf Bestellung 73 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.35 EUR
41+1.74 EUR
47+1.53 EUR
53+1.37 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
BFP420H6327XTSA1 BFP420.pdf
BFP420H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 60mA; 0.21W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.5V
Collector current: 60mA
Power dissipation: 0.21W
Case: SOT343
Current gain: 60...130
Mounting: SMD
Kind of package: reel; tape
Frequency: 25GHz
auf Bestellung 4949 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
285+0.25 EUR
296+0.24 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH
BFP460H6327XTSA1 Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920
BFP460H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 70mA; 0.23W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.5V
Collector current: 70mA
Power dissipation: 0.23W
Case: SOT343
Current gain: 90...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 22GHz
Produkt ist nicht verfügbar
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BFP420FH6327XTSA1 BFP420F.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 60mA; 0.21W; TSFP-4
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.5V
Collector current: 60mA
Power dissipation: 0.21W
Case: TSFP-4
Current gain: 60...130
Mounting: SMD
Kind of package: reel; tape
Frequency: 25GHz
Produkt ist nicht verfügbar
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BFP410H6327XTSA1 Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 4.5V; 40mA; 150mW; SOT343
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 4.5V
Collector current: 40mA
Power dissipation: 0.15W
Case: SOT343
Current gain: 60
Mounting: SMD
Frequency: 25GHz
Application: automotive industry
Produkt ist nicht verfügbar
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ESD101B102ELSE6327XTSA1 ESD101B102ELSE6327XTSA1.pdf
ESD101B102ELSE6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 30W; 6.1V; 2A; bidirectional; TSSLP-2-4; reel,tape
Mounting: SMD
Leakage current: 20nA
Max. forward impulse current: 2A
Max. off-state voltage: 5.5V
Breakdown voltage: 6.1V
Peak pulse power dissipation: 30W
Semiconductor structure: bidirectional
Version: ESD
Kind of package: reel; tape
Type of diode: TVS
Case: TSSLP-2-4
auf Bestellung 8196 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
596+0.12 EUR
695+0.1 EUR
807+0.089 EUR
Mindestbestellmenge: 500
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IPT007N06NATMA1 IPT007N06N-DTE.pdf
IPT007N06NATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; Idm: 1200A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 0.7mΩ
Mounting: SMD
Gate charge: 216nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BFP650H6327 BFP650H6327-DTE.pdf
BFP650H6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; RF; 13V; 0.15A; 0.5W; SOT343
Mounting: SMD
Case: SOT343
Kind of package: reel; tape
Frequency: 42GHz
Kind of transistor: RF
Type of transistor: NPN
Technology: SiGe:C
Collector current: 0.15A
Power dissipation: 0.5W
Collector-emitter voltage: 13V
Polarisation: bipolar
auf Bestellung 2568 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+0.8 EUR
124+0.58 EUR
141+0.51 EUR
157+0.46 EUR
Mindestbestellmenge: 90
Im Einkaufswagen  Stück im Wert von  UAH
BFP650FH6327 BFP650FH6327-dte.pdf
BFP650FH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; RF; 13V; 0.15A; 0.5W; TSFP-4
Mounting: SMD
Case: TSFP-4
Kind of package: reel; tape
Frequency: 42GHz
Kind of transistor: RF
Type of transistor: NPN
Technology: SiGe:C
Collector current: 0.15A
Power dissipation: 0.5W
Collector-emitter voltage: 13V
Polarisation: bipolar
auf Bestellung 1432 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
218+0.33 EUR
229+0.31 EUR
240+0.3 EUR
Mindestbestellmenge: 209
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BSC018N04LSGATMA1 BSC018N04LSG-DTE.pdf
BSC018N04LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 125W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ESD5V3U2U03LRHE6327XTMA1 esd5v3u2useries.pdf?folderId=db3a30431441fb5d011488a9e66f0ded&fileId=db3a30431b0626df011b0d3e3ca97dc0
Hersteller: INFINEON TECHNOLOGIES
Category: Protection diodes - arrays
Description: Diode: TVS array; 3A; unidirectional,common anode; TSLP-3-7
Type of diode: TVS array
Max. off-state voltage: 5.3V
Semiconductor structure: common anode; unidirectional
Case: TSLP-3-7
Mounting: SMD
Kind of package: reel; tape
Leakage current: 50nA
Max. forward impulse current: 3A
Produkt ist nicht verfügbar
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BSC066N06NSATMA1 BSC066N06NS-DTE.pdf
BSC066N06NSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 64A; 46W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 64A
Power dissipation: 46W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DD100N16S DD100N16S.pdf
DD100N16S
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 130A; BG-SB20-1; screw
Semiconductor structure: double series
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.6V
Load current: 130A
Max. forward impulse current: 2.5kA
Max. off-state voltage: 1.6kV
Case: BG-SB20-1
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+42.53 EUR
3+37.25 EUR
Mindestbestellmenge: 2
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CY7C1018DV33-10VXI Infineon-CY7C1018DV33_CY7C1019DV33_1-Mbit_(128_K_8)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2ee5537e7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory
Type of integrated circuit: SRAM memory
Produkt ist nicht verfügbar
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IPD60R650CEAUMA1 Infineon-IPA60R650CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c851db3d1f55
IPD60R650CEAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 19A; 82W
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.2A
Power dissipation: 82W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 19A
Gate charge: 20.5nC
auf Bestellung 2167 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
81+0.89 EUR
90+0.8 EUR
101+0.71 EUR
102+0.7 EUR
Mindestbestellmenge: 81
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IPD65R380E6ATMA1 IPD65R380E6-DTE.pdf
IPD65R380E6ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD65R420CFDBTMA1 IPD65R420CFD-DTE.pdf
IPD65R420CFDBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.7A
On-state resistance: 0.42Ω
Gate-source voltage: ±20V
Power dissipation: 83.3W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R400CEAUMA1 Infineon-IPD65R400CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401539eb64cd44f67
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 9.5A; Idm: 30A; 118W; PG-TO252
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 9.5A
On-state resistance: 0.4Ω
Gate-source voltage: ±20V
Power dissipation: 118W
Pulsed drain current: 30A
Technology: CoolMOS™ CE
Case: PG-TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R650CEAUMA1 Infineon-IPD65R650CE-DS-v02_00-EN.pdf?fileId=5546d4624d6fc3d5014d7220d45a1844
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.1A; 86W; DPAK,TO252
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.1A
Gate charge: 23nC
On-state resistance: 0.54Ω
Power dissipation: 86W
Case: DPAK; TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD650P06NMATMA1 Infineon-IPD650P06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a03e2db2100b1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -22A; 83W; DPAK,TO252
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -22A
Gate charge: 39nC
On-state resistance: 65mΩ
Power dissipation: 83W
Case: DPAK; TO252
Kind of channel: enhancement
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
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IPD65R1K4CFDBTMA1 IPD65R1K4CFD-DTE.pdf
IPD65R1K4CFDBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.8A; 28.4W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.8A
On-state resistance: 1.4Ω
Gate-source voltage: ±20V
Power dissipation: 28.4W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R225C7ATMA1 IPD65R225C7-DTE.pdf
IPD65R225C7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 63W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
On-state resistance: 0.225Ω
Gate-source voltage: ±20V
Power dissipation: 63W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R250C6XTMA1 IPD65R250C6-DTE.pdf
IPD65R250C6XTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208.3W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16.1A
On-state resistance: 0.25Ω
Gate-source voltage: ±20V
Power dissipation: 208.3W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R250E6XTMA1 IPD65R250E6-DTE.pdf
IPD65R250E6XTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16.1A
On-state resistance: 0.25Ω
Gate-source voltage: ±20V
Power dissipation: 208W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R380E6BTMA1 IPD65R380E6-DTE.pdf
IPD65R380E6BTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD65R420CFDATMA1 IPD65R420CFD-DTE.pdf
IPD65R420CFDATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.7A
On-state resistance: 0.42Ω
Gate-source voltage: ±20V
Power dissipation: 83.3W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R600E6ATMA1 IPD65R600E6-DTE.pdf
IPD65R600E6ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.3A
On-state resistance: 0.6Ω
Gate-source voltage: ±20V
Power dissipation: 63W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R600E6BTMA1 IPD65R600E6-DTE.pdf
IPD65R600E6BTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.3A
On-state resistance: 0.6Ω
Gate-source voltage: ±20V
Power dissipation: 63W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R660CFDATMA1 IPD65R660CFD-DTE.pdf
IPD65R660CFDATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
On-state resistance: 0.66Ω
Gate-source voltage: ±20V
Power dissipation: 62.5W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R660CFDBTMA1 IPD65R660CFD-DTE.pdf
IPD65R660CFDBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
On-state resistance: 0.66Ω
Gate-source voltage: ±20V
Power dissipation: 62.5W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R950CFDATMA1 IPD65R950CFD-DTE.pdf
IPD65R950CFDATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; 36.7W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
On-state resistance: 0.95Ω
Gate-source voltage: ±20V
Power dissipation: 36.7W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R950CFDBTMA1 IPD65R950CFD-DTE.pdf
IPD65R950CFDBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; 36.7W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
On-state resistance: 0.95Ω
Gate-source voltage: ±20V
Power dissipation: 36.7W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPP60R120P7 IPP60R120P7.pdf
IPP60R120P7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 95W
Case: PG-TO220-3
On-state resistance: 0.12Ω
Mounting: THT
Kind of channel: enhancement
Technology: CoolMOS™ P7
Kind of package: tube
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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IPB60R120P7ATMA1 IPB60R120P7.pdf
IPB60R120P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 95W
Case: D2PAK
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 36nC
Kind of channel: enhancement
Technology: CoolMOS™ P7
Kind of package: reel
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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XC886C6FFI5VACFXUMA1 XC88X-DTE.pdf
XC886C6FFI5VACFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: CAN x2,SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: CAN x2; SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 24kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Kind of core: 8-bit
Produkt ist nicht verfügbar
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