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IPI180N10N3GXKSA1 IPI180N10N3GXKSA1 INFINEON TECHNOLOGIES IPI180N10N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; 71W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Power dissipation: 71W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 461 Stücke:
Lieferzeit 14-21 Tag (e)
49+1.49 EUR
56+1.29 EUR
70+1.03 EUR
250+0.9 EUR
Mindestbestellmenge: 49
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IPB180N10S402ATMA1 INFINEON TECHNOLOGIES Infineon-IPB180N10S4_02-DS-v01_00-en.pdf?fileId=db3a30433d1d0bbe013d2129cf8a2f88 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 300W; TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 300W
Case: TO263-7
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 156nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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IAUA180N10S5N029AUMA1 INFINEON TECHNOLOGIES Infineon-IAUA180N10S5N029-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39b1380b38 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 24A; Idm: 561A; 221W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 24A
Pulsed drain current: 561A
Power dissipation: 221W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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ISC080N10NM6ATMA1 INFINEON TECHNOLOGIES Infineon-ISC080N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bba32c6cb0211 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 75A; Idm: 13A; 100W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 75A
Pulsed drain current: 13A
Power dissipation: 100W
Case: PG-TDSON-8 FL
Gate-source voltage: 20V
On-state resistance: 8.05mΩ
Mounting: SMD
Gate charge: 24nC
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 5000 Stücke:
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5000+1.16 EUR
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IRLU3410PBF IRLU3410PBF INFINEON TECHNOLOGIES irlr3410pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: IPAK
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
46+1.57 EUR
75+0.96 EUR
Mindestbestellmenge: 46
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SPD30P06PGBTMA1 SPD30P06PGBTMA1 INFINEON TECHNOLOGIES SPD30P06PGBTMA1-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -30A; 125W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -30A
Power dissipation: 125W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 913 Stücke:
Lieferzeit 14-21 Tag (e)
36+2 EUR
45+1.6 EUR
55+1.32 EUR
65+1.1 EUR
Mindestbestellmenge: 36
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FM25040B-GTR FM25040B-GTR INFINEON TECHNOLOGIES Infineon-FM25040B_4-Kbit_(512_8)_Serial_(SPI)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec8ff1b416c&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 4.5÷5.5VDC; 20MHz; SO8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Interface: SPI
Supply voltage: 4.5...5.5V DC
Memory: 4kb FRAM
Memory organisation: 512x8bit
Clock frequency: 20MHz
Case: SO8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Produkt ist nicht verfügbar
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S29GL256P10TFI010 S29GL256P10TFI010 INFINEON TECHNOLOGIES 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; TSOP56; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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S29GL256S10TFI010 INFINEON TECHNOLOGIES infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; TSOP56; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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S29GL256P90FFIR20 INFINEON TECHNOLOGIES infineon-s29gl01gp-s29gl512p-s29gl256p-s29gl128p-1-gbit512256128-mbit-3-v-page-flash-with-90-nm-mirrorbit-process-technology-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cyp Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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S29GL256P10FFI010 INFINEON TECHNOLOGIES 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of memory: NOR
Kind of interface: parallel
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 256Mb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
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S29GL256P11TFI010 INFINEON TECHNOLOGIES 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; TSOP56; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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S29GL256S10DHB020 INFINEON TECHNOLOGIES infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Application: automotive
Access time: 100ns
Kind of package: in-tray
Produkt ist nicht verfügbar
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S29GL256S10DHB023 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Application: automotive
Access time: 100ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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S29GL256S10DHI010 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 100ns
Kind of package: in-tray
Produkt ist nicht verfügbar
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S29GL256S10DHI020 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 100ns
Kind of package: in-tray
Produkt ist nicht verfügbar
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S29GL256S10DHI023 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 100ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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S29GL256S10DHIV10 INFINEON TECHNOLOGIES infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 100ns
Kind of package: in-tray
Produkt ist nicht verfügbar
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S29GL256S10DHIV20 INFINEON TECHNOLOGIES infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 100ns
Kind of package: in-tray
Produkt ist nicht verfügbar
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S29GL256S10DHIV23 INFINEON TECHNOLOGIES S29GL_128S_01GS_00.pdf Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 100ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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S29GL256S10DHV010 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Access time: 100ns
Kind of package: in-tray
Produkt ist nicht verfügbar
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S29GL256S10FHI010 INFINEON TECHNOLOGIES infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 100ns
Kind of package: in-tray
Produkt ist nicht verfügbar
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FF200R12KT4HOSA1 FF200R12KT4HOSA1 INFINEON TECHNOLOGIES FF200R12KT4.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Case: AG-62MM-1
Power dissipation: 1.1kW
Max. off-state voltage: 1.2kV
Collector current: 200A
Pulsed collector current: 400A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Electrical mounting: screw
Mechanical mounting: screw
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
1+107.25 EUR
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FM25W256-G FM25W256-G INFINEON TECHNOLOGIES FM25W256-G.pdf Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; SPI; 32kx8bit; 2.7÷5.5VDC; 20MHz; SO8
Type of integrated circuit: FRAM memory
Clock frequency: 20MHz
Interface: SPI
Supply voltage: 2.7...5.5V DC
Case: SO8
Mounting: SMD
Memory: 256kb FRAM
Operating temperature: -40...85°C
Memory organisation: 32kx8bit
Kind of memory: FRAM
Kind of interface: serial
auf Bestellung 334 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.92 EUR
Mindestbestellmenge: 9
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FM24CL64B-G FM24CL64B-G INFINEON TECHNOLOGIES FM24CL64B-G.pdf Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 2.7÷3.6VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Clock frequency: 1MHz
Interface: I2C
Supply voltage: 2.7...3.6V DC
Case: SO8
Mounting: SMD
Memory: 64kb FRAM
Operating temperature: -40...85°C
Memory organisation: 8kx8bit
Kind of memory: FRAM
Kind of interface: serial
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.89 EUR
28+2.59 EUR
29+2.5 EUR
Mindestbestellmenge: 25
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CY7C1041GN30-10ZSXI CY7C1041GN30-10ZSXI INFINEON TECHNOLOGIES Infineon-CY7C1041GN_4-Mbit_(256K_words_16_bit)_Static_RAM-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed82ae859a5&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.2÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating voltage: 2.2...3.6V
auf Bestellung 1347 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.62 EUR
19+3.95 EUR
Mindestbestellmenge: 16
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IRF7465TRPBF IRF7465TRPBF INFINEON TECHNOLOGIES irf7465pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 1.9A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.9A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 2.5W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF7465TRPBFXTMA1 INFINEON TECHNOLOGIES infineon-irf7465-datasheet-en.pdf?fileId=5546d462533600a4015355fef2681c08 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 1.9A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.9A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FM25CL64B-GTR FM25CL64B-GTR INFINEON TECHNOLOGIES Infineon-FM25CL64B_64-Kbit_(8_K_8)_Serial_(SPI)_F-RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdfcd83119&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; SPI; 8kx8bit; 2.7÷3.6VDC; 20MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 64kb FRAM
Interface: SPI
Memory organisation: 8kx8bit
Supply voltage: 2.7...3.6V DC
Clock frequency: 20MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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BA592E6327HTSA1 BA592E6327HTSA1 INFINEON TECHNOLOGIES BAx92-DTE.pdf Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape
Type of diode: switching
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Leakage current: 20nA
Capacitance: 0.6...1.4pF
auf Bestellung 525 Stücke:
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380+0.19 EUR
430+0.17 EUR
485+0.15 EUR
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BA592E6327HTSA1 BA592E6327HTSA1 INFINEON TECHNOLOGIES BAx92-DTE.pdf Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape
Type of diode: switching
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Leakage current: 20nA
Capacitance: 0.6...1.4pF
auf Bestellung 1465 Stücke:
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395+0.18 EUR
450+0.16 EUR
500+0.15 EUR
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IPB80N06S2L07ATMA3 IPB80N06S2L07ATMA3 INFINEON TECHNOLOGIES IPB80N06S2L07.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 80A; 210W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Power dissipation: 210W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Gate charge: 95nC
Kind of channel: enhancement
Technology: OptiMOS™
auf Bestellung 667 Stücke:
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35+2.09 EUR
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SPW11N80C3 SPW11N80C3 INFINEON TECHNOLOGIES SPW11N80C3-DTE.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.1A; 156W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.1A
Power dissipation: 156W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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BSC0906NSATMA1 BSC0906NSATMA1 INFINEON TECHNOLOGIES BSC0906NS-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 53A; 30W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 53A
Power dissipation: 30W
Case: PG-TDSON-8
On-state resistance: 4.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Gate-source voltage: ±20V
auf Bestellung 2393 Stücke:
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81+0.89 EUR
120+0.6 EUR
156+0.46 EUR
174+0.41 EUR
190+0.38 EUR
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IR2112PBF IR2112PBF INFINEON TECHNOLOGIES ir2112.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Topology: MOSFET half-bridge
Turn-off time: 145ns
Turn-on time: 205ns
Power: 1.6W
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IR2181SPBF IR2181SPBF INFINEON TECHNOLOGIES ir2181.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 180ns
Turn-off time: 0.22µs
Protection: undervoltage UVP
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17+4.2 EUR
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IR2183SPBF IR2183SPBF INFINEON TECHNOLOGIES IR2183SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 180ns
Turn-off time: 0.22µs
Protection: short circuit protection SCP; undervoltage UVP
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IR2301SPBF IR2301SPBF INFINEON TECHNOLOGIES IR2301-DTE.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -0.35...0.2A
Number of channels: 2
Supply voltage: 5...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Integrated circuit features: charge pump; integrated bootstrap functionality
Voltage class: 600V
Topology: MOSFET half-bridge
Turn-off time: 200ns
Turn-on time: 220ns
Power: 625mW
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30+2.42 EUR
35+2.06 EUR
40+1.83 EUR
46+1.56 EUR
50+1.43 EUR
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IR2109PBF IR2109PBF INFINEON TECHNOLOGIES IR21094SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -250...120mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Topology: MOSFET half-bridge
Turn-off time: 200ns
Turn-on time: 750ns
Power: 1W
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21+3.42 EUR
28+2.57 EUR
30+2.4 EUR
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IR2304SPBF IR2304SPBF INFINEON TECHNOLOGIES ir2304.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -130...60mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Topology: MOSFET half-bridge
Turn-off time: 0.22µs
Turn-on time: 220ns
Power: 625mW
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IR2302SPBF IR2302SPBF INFINEON TECHNOLOGIES IR2302SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -0.35...0.2A
Number of channels: 2
Supply voltage: 5...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Topology: MOSFET half-bridge
Turn-off time: 200ns
Turn-on time: 750ns
Power: 625mW
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IR2112SPBF IR2112SPBF INFINEON TECHNOLOGIES ir2112.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -420...200mA
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 205ns
Turn-off time: 145ns
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23+3.2 EUR
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PVG612SPBF INFINEON TECHNOLOGIES pvg612.pdf?fileId=5546d462533600a401535683c1892937 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; 2A
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 2A
Manufacturer series: PVG612
Relay variant: PhotoMOS
Mounting: SMT
Case: DIP6
Body dimensions: 8.6x6.5x3.4mm
Leads: for PCB
Insulation voltage: 4kV
Kind of output: MOSFET
Number of poles: 1
Operating temperature: -40...85°C
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IPN50R950CEATMA1 IPN50R950CEATMA1 INFINEON TECHNOLOGIES IPN50R950CE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.2A; 5W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.2A
Power dissipation: 5W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 10.5nC
auf Bestellung 1999 Stücke:
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177+0.4 EUR
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IPN50R800CEATMA1 IPN50R800CEATMA1 INFINEON TECHNOLOGIES IPN50R800CE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; 5W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.8A
Power dissipation: 5W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 12.4nC
auf Bestellung 2896 Stücke:
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117+0.61 EUR
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IR1169STRPBF IR1169STRPBF INFINEON TECHNOLOGIES IR1169STRPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8
Type of integrated circuit: driver
Topology: flyback; push-pull; resonant LLC
Kind of integrated circuit: gate driver
Case: SO8
Output current: -4...1A
Power: 625mW
Supply voltage: 11...19V DC
Mounting: SMD
Operating temperature: -40...125°C
Application: SMPS
Kind of package: reel; tape
Voltage class: 200V
Produkt ist nicht verfügbar
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IR1161LTRPBF IR1161LTRPBF INFINEON TECHNOLOGIES IR1161LTRPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SOT23-5
Type of integrated circuit: driver
Topology: flyback; push-pull; resonant LLC
Kind of integrated circuit: gate driver
Case: SOT23-5
Output current: -2.5...1A
Power: 590mW
Supply voltage: 4.75...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Application: SMPS
Kind of package: reel; tape
Voltage class: 200V
Produkt ist nicht verfügbar
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IR11688STRPBF IR11688STRPBF INFINEON TECHNOLOGIES IR11688STRPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8
Type of integrated circuit: driver
Topology: flyback; push-pull; resonant LLC
Kind of integrated circuit: gate driver
Case: SO8
Output current: -4...1A
Power: 625mW
Supply voltage: 4.75...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Application: SMPS
Kind of package: reel; tape
Voltage class: 200V
Produkt ist nicht verfügbar
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S25FL128SAGMFIR11 INFINEON TECHNOLOGIES infineon-s25fl128s-s25fl256s-128-mb-16-mb-256-mb-32-mb-fl-s-flash-spi-multi-io-3-v-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Case: SOIC16
Mounting: SMD
Kind of package: tube
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Memory: 128Mb FLASH
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
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S25FL256SAGMFIR11 INFINEON TECHNOLOGIES infineon-s25fl128s-s25fl256s-128-mb-16-mb-256-mb-32-mb-fl-s-flash-spi-multi-io-3-v-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Case: SOIC16
Mounting: SMD
Kind of package: tube
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Memory: 256Mb FLASH
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
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S25FL512SAGMFIR11 INFINEON TECHNOLOGIES Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Case: SOIC16
Mounting: SMD
Kind of package: tube
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Memory: 512Mb FLASH
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
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CY8C20234-12LKXI CY8C20234-12LKXI INFINEON TECHNOLOGIES Infineon-CY8C20134_CY8C20234_CY8C20334_CY8C20434_CY8C20534_CY8C20634_PSoC_Programmable_System-on-Chip-DataSheet-v24_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebcc61b2e7f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 12MHz; QFN16; 512BSRAM,8kBFLASH
Type of integrated circuit: PSoC microcontroller
Interface: I2C; SPI; UART; USB 2.0
Supply voltage: 2.4...5.25V DC
Number of inputs/outputs: 13
Integrated circuit features: CapSense
Kind of core: 8-bit
Memory: 0.5kB SRAM; 8kB FLASH
Mounting: SMD
Clock frequency: 12MHz
Case: QFN16
Produkt ist nicht verfügbar
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CY8C20234-12SXI CY8C20234-12SXI INFINEON TECHNOLOGIES Infineon-CY8C20134_CY8C20234_CY8C20334_CY8C20434_CY8C20534_CY8C20634_PSoC_Programmable_System-on-Chip-DataSheet-v24_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebcc61b2e7f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 12MHz; SO16; 512BSRAM,8kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Interface: I2C; SPI; UART; USB 2.0
Case: SO16
Supply voltage: 2.4...5.25V DC
Number of inputs/outputs: 13
Memory: 0.5kB SRAM; 8kB FLASH
Clock frequency: 12MHz
Kind of core: 8-bit
Integrated circuit features: CapSense
Produkt ist nicht verfügbar
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S29GL01GT11DHIV20 INFINEON TECHNOLOGIES infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 110ns
Output voltage: 1.65...3.6V DC
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
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S29GL01GT11DHIV23 INFINEON TECHNOLOGIES infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 110ns
Output voltage: 1.65...3.6V DC
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
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S29GL01GT11FHIV10 INFINEON TECHNOLOGIES infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 110ns
Output voltage: 1.65...3.6V DC
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
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S29GL01GT11FHIV20 INFINEON TECHNOLOGIES infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 110ns
Output voltage: 1.65...3.6V DC
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
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S29GL01GT11FHIV23 INFINEON TECHNOLOGIES infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 110ns
Output voltage: 1.65...3.6V DC
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
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S29GL01GT11TFB020 INFINEON TECHNOLOGIES Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; TSOP56; parallel
Case: TSOP56
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Operating temperature: -40...105°C
Access time: 110ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Application: automotive
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
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S29GL01GT11TFIV10 INFINEON TECHNOLOGIES infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; TSOP56; parallel
Case: TSOP56
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 110ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
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IPI180N10N3GXKSA1 IPI180N10N3G-DTE.pdf
IPI180N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; 71W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Power dissipation: 71W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 461 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
49+1.49 EUR
56+1.29 EUR
70+1.03 EUR
250+0.9 EUR
Mindestbestellmenge: 49
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IPB180N10S402ATMA1 Infineon-IPB180N10S4_02-DS-v01_00-en.pdf?fileId=db3a30433d1d0bbe013d2129cf8a2f88
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 300W; TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 300W
Case: TO263-7
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 156nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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IAUA180N10S5N029AUMA1 Infineon-IAUA180N10S5N029-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39b1380b38
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 24A; Idm: 561A; 221W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 24A
Pulsed drain current: 561A
Power dissipation: 221W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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ISC080N10NM6ATMA1 Infineon-ISC080N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bba32c6cb0211
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 75A; Idm: 13A; 100W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 75A
Pulsed drain current: 13A
Power dissipation: 100W
Case: PG-TDSON-8 FL
Gate-source voltage: 20V
On-state resistance: 8.05mΩ
Mounting: SMD
Gate charge: 24nC
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+1.16 EUR
Mindestbestellmenge: 5000
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IRLU3410PBF irlr3410pbf.pdf
IRLU3410PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: IPAK
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
46+1.57 EUR
75+0.96 EUR
Mindestbestellmenge: 46
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SPD30P06PGBTMA1 SPD30P06PGBTMA1-DTE.pdf
SPD30P06PGBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -30A; 125W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -30A
Power dissipation: 125W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 913 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+2 EUR
45+1.6 EUR
55+1.32 EUR
65+1.1 EUR
Mindestbestellmenge: 36
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FM25040B-GTR Infineon-FM25040B_4-Kbit_(512_8)_Serial_(SPI)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec8ff1b416c&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM25040B-GTR
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 4.5÷5.5VDC; 20MHz; SO8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Interface: SPI
Supply voltage: 4.5...5.5V DC
Memory: 4kb FRAM
Memory organisation: 512x8bit
Clock frequency: 20MHz
Case: SO8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256P10TFI010 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref
S29GL256P10TFI010
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; TSOP56; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S10TFI010 infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; TSOP56; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256P90FFIR20 infineon-s29gl01gp-s29gl512p-s29gl256p-s29gl128p-1-gbit512256128-mbit-3-v-page-flash-with-90-nm-mirrorbit-process-technology-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cyp
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256P10FFI010 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of memory: NOR
Kind of interface: parallel
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 256Mb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256P11TFI010 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; TSOP56; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S10DHB020 infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Application: automotive
Access time: 100ns
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S10DHB023 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Application: automotive
Access time: 100ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S10DHI010 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 100ns
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S10DHI020 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 100ns
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S10DHI023 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 100ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S10DHIV10 infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 100ns
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S10DHIV20 infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 100ns
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S10DHIV23 S29GL_128S_01GS_00.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 100ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S10DHV010 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Access time: 100ns
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S10FHI010 infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 100ns
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FF200R12KT4HOSA1 FF200R12KT4.pdf
FF200R12KT4HOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Case: AG-62MM-1
Power dissipation: 1.1kW
Max. off-state voltage: 1.2kV
Collector current: 200A
Pulsed collector current: 400A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Electrical mounting: screw
Mechanical mounting: screw
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+107.25 EUR
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FM25W256-G FM25W256-G.pdf
FM25W256-G
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; SPI; 32kx8bit; 2.7÷5.5VDC; 20MHz; SO8
Type of integrated circuit: FRAM memory
Clock frequency: 20MHz
Interface: SPI
Supply voltage: 2.7...5.5V DC
Case: SO8
Mounting: SMD
Memory: 256kb FRAM
Operating temperature: -40...85°C
Memory organisation: 32kx8bit
Kind of memory: FRAM
Kind of interface: serial
auf Bestellung 334 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.92 EUR
Mindestbestellmenge: 9
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FM24CL64B-G FM24CL64B-G.pdf
FM24CL64B-G
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 2.7÷3.6VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Clock frequency: 1MHz
Interface: I2C
Supply voltage: 2.7...3.6V DC
Case: SO8
Mounting: SMD
Memory: 64kb FRAM
Operating temperature: -40...85°C
Memory organisation: 8kx8bit
Kind of memory: FRAM
Kind of interface: serial
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.89 EUR
28+2.59 EUR
29+2.5 EUR
Mindestbestellmenge: 25
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CY7C1041GN30-10ZSXI Infineon-CY7C1041GN_4-Mbit_(256K_words_16_bit)_Static_RAM-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed82ae859a5&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1041GN30-10ZSXI
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.2÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating voltage: 2.2...3.6V
auf Bestellung 1347 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.62 EUR
19+3.95 EUR
Mindestbestellmenge: 16
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IRF7465TRPBF irf7465pbf.pdf
IRF7465TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 1.9A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.9A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 2.5W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF7465TRPBFXTMA1 infineon-irf7465-datasheet-en.pdf?fileId=5546d462533600a4015355fef2681c08
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 1.9A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.9A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FM25CL64B-GTR Infineon-FM25CL64B_64-Kbit_(8_K_8)_Serial_(SPI)_F-RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdfcd83119&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM25CL64B-GTR
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; SPI; 8kx8bit; 2.7÷3.6VDC; 20MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 64kb FRAM
Interface: SPI
Memory organisation: 8kx8bit
Supply voltage: 2.7...3.6V DC
Clock frequency: 20MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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BA592E6327HTSA1 BAx92-DTE.pdf
BA592E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape
Type of diode: switching
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Leakage current: 20nA
Capacitance: 0.6...1.4pF
auf Bestellung 525 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
380+0.19 EUR
430+0.17 EUR
485+0.15 EUR
525+0.14 EUR
Mindestbestellmenge: 380
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BA592E6327HTSA1 BAx92-DTE.pdf
BA592E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape
Type of diode: switching
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Leakage current: 20nA
Capacitance: 0.6...1.4pF
auf Bestellung 1465 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
355+0.2 EUR
395+0.18 EUR
450+0.16 EUR
500+0.15 EUR
Mindestbestellmenge: 355
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IPB80N06S2L07ATMA3 IPB80N06S2L07.pdf
IPB80N06S2L07ATMA3
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 80A; 210W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Power dissipation: 210W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Gate charge: 95nC
Kind of channel: enhancement
Technology: OptiMOS™
auf Bestellung 667 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.55 EUR
31+2.36 EUR
35+2.09 EUR
100+1.82 EUR
Mindestbestellmenge: 21
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SPW11N80C3 description SPW11N80C3-DTE.pdf
SPW11N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.1A; 156W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.1A
Power dissipation: 156W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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BSC0906NSATMA1 BSC0906NS-DTE.pdf
BSC0906NSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 53A; 30W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 53A
Power dissipation: 30W
Case: PG-TDSON-8
On-state resistance: 4.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Gate-source voltage: ±20V
auf Bestellung 2393 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
81+0.89 EUR
120+0.6 EUR
156+0.46 EUR
174+0.41 EUR
190+0.38 EUR
Mindestbestellmenge: 81
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IR2112PBF description ir2112.pdf
IR2112PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -420...200mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Topology: MOSFET half-bridge
Turn-off time: 145ns
Turn-on time: 205ns
Power: 1.6W
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.92 EUR
22+3.29 EUR
Mindestbestellmenge: 19
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IR2181SPBF description ir2181.pdf
IR2181SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 180ns
Turn-off time: 0.22µs
Protection: undervoltage UVP
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.2 EUR
Mindestbestellmenge: 17
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IR2183SPBF IR2183SPBF.pdf
IR2183SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 180ns
Turn-off time: 0.22µs
Protection: short circuit protection SCP; undervoltage UVP
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.86 EUR
22+3.26 EUR
Mindestbestellmenge: 19
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IR2301SPBF IR2301-DTE.pdf
IR2301SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -0.35...0.2A
Number of channels: 2
Supply voltage: 5...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Integrated circuit features: charge pump; integrated bootstrap functionality
Voltage class: 600V
Topology: MOSFET half-bridge
Turn-off time: 200ns
Turn-on time: 220ns
Power: 625mW
auf Bestellung 117 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.42 EUR
35+2.06 EUR
40+1.83 EUR
46+1.56 EUR
50+1.43 EUR
95+1.34 EUR
Mindestbestellmenge: 30
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IR2109PBF IR21094SPBF.pdf
IR2109PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -250...120mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Topology: MOSFET half-bridge
Turn-off time: 200ns
Turn-on time: 750ns
Power: 1W
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.42 EUR
28+2.57 EUR
30+2.4 EUR
Mindestbestellmenge: 21
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IR2304SPBF ir2304.pdf
IR2304SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -130...60mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Topology: MOSFET half-bridge
Turn-off time: 0.22µs
Turn-on time: 220ns
Power: 625mW
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.17 EUR
Mindestbestellmenge: 33
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IR2302SPBF IR2302SPBF.pdf
IR2302SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -0.35...0.2A
Number of channels: 2
Supply voltage: 5...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Topology: MOSFET half-bridge
Turn-off time: 200ns
Turn-on time: 750ns
Power: 625mW
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+17.88 EUR
Mindestbestellmenge: 4
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IR2112SPBF description ir2112.pdf
IR2112SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -420...200mA
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 205ns
Turn-off time: 145ns
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.08 EUR
23+3.2 EUR
27+2.72 EUR
Mindestbestellmenge: 18
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PVG612SPBF pvg612.pdf?fileId=5546d462533600a401535683c1892937
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; 2A
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 2A
Manufacturer series: PVG612
Relay variant: PhotoMOS
Mounting: SMT
Case: DIP6
Body dimensions: 8.6x6.5x3.4mm
Leads: for PCB
Insulation voltage: 4kV
Kind of output: MOSFET
Number of poles: 1
Operating temperature: -40...85°C
auf Bestellung 946 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+7.08 EUR
Mindestbestellmenge: 50
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IPN50R950CEATMA1 IPN50R950CE.pdf
IPN50R950CEATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.2A; 5W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.2A
Power dissipation: 5W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 10.5nC
auf Bestellung 1999 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
160+0.45 EUR
177+0.4 EUR
200+0.36 EUR
500+0.32 EUR
Mindestbestellmenge: 160
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IPN50R800CEATMA1 IPN50R800CE.pdf
IPN50R800CEATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; 5W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.8A
Power dissipation: 5W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 12.4nC
auf Bestellung 2896 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
93+0.77 EUR
117+0.61 EUR
126+0.57 EUR
Mindestbestellmenge: 93
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IR1169STRPBF IR1169STRPBF.pdf
IR1169STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8
Type of integrated circuit: driver
Topology: flyback; push-pull; resonant LLC
Kind of integrated circuit: gate driver
Case: SO8
Output current: -4...1A
Power: 625mW
Supply voltage: 11...19V DC
Mounting: SMD
Operating temperature: -40...125°C
Application: SMPS
Kind of package: reel; tape
Voltage class: 200V
Produkt ist nicht verfügbar
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IR1161LTRPBF IR1161LTRPBF.pdf
IR1161LTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SOT23-5
Type of integrated circuit: driver
Topology: flyback; push-pull; resonant LLC
Kind of integrated circuit: gate driver
Case: SOT23-5
Output current: -2.5...1A
Power: 590mW
Supply voltage: 4.75...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Application: SMPS
Kind of package: reel; tape
Voltage class: 200V
Produkt ist nicht verfügbar
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IR11688STRPBF IR11688STRPBF.pdf
IR11688STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8
Type of integrated circuit: driver
Topology: flyback; push-pull; resonant LLC
Kind of integrated circuit: gate driver
Case: SO8
Output current: -4...1A
Power: 625mW
Supply voltage: 4.75...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Application: SMPS
Kind of package: reel; tape
Voltage class: 200V
Produkt ist nicht verfügbar
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S25FL128SAGMFIR11 infineon-s25fl128s-s25fl256s-128-mb-16-mb-256-mb-32-mb-fl-s-flash-spi-multi-io-3-v-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Case: SOIC16
Mounting: SMD
Kind of package: tube
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Memory: 128Mb FLASH
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
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S25FL256SAGMFIR11 infineon-s25fl128s-s25fl256s-128-mb-16-mb-256-mb-32-mb-fl-s-flash-spi-multi-io-3-v-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Case: SOIC16
Mounting: SMD
Kind of package: tube
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Memory: 256Mb FLASH
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
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S25FL512SAGMFIR11 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Case: SOIC16
Mounting: SMD
Kind of package: tube
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Memory: 512Mb FLASH
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY8C20234-12LKXI Infineon-CY8C20134_CY8C20234_CY8C20334_CY8C20434_CY8C20534_CY8C20634_PSoC_Programmable_System-on-Chip-DataSheet-v24_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebcc61b2e7f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
CY8C20234-12LKXI
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 12MHz; QFN16; 512BSRAM,8kBFLASH
Type of integrated circuit: PSoC microcontroller
Interface: I2C; SPI; UART; USB 2.0
Supply voltage: 2.4...5.25V DC
Number of inputs/outputs: 13
Integrated circuit features: CapSense
Kind of core: 8-bit
Memory: 0.5kB SRAM; 8kB FLASH
Mounting: SMD
Clock frequency: 12MHz
Case: QFN16
Produkt ist nicht verfügbar
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CY8C20234-12SXI Infineon-CY8C20134_CY8C20234_CY8C20334_CY8C20434_CY8C20534_CY8C20634_PSoC_Programmable_System-on-Chip-DataSheet-v24_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebcc61b2e7f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
CY8C20234-12SXI
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 12MHz; SO16; 512BSRAM,8kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Interface: I2C; SPI; UART; USB 2.0
Case: SO16
Supply voltage: 2.4...5.25V DC
Number of inputs/outputs: 13
Memory: 0.5kB SRAM; 8kB FLASH
Clock frequency: 12MHz
Kind of core: 8-bit
Integrated circuit features: CapSense
Produkt ist nicht verfügbar
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S29GL01GT11DHIV20 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 110ns
Output voltage: 1.65...3.6V DC
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
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S29GL01GT11DHIV23 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 110ns
Output voltage: 1.65...3.6V DC
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
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S29GL01GT11FHIV10 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 110ns
Output voltage: 1.65...3.6V DC
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GT11FHIV20 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 110ns
Output voltage: 1.65...3.6V DC
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
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S29GL01GT11FHIV23 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 110ns
Output voltage: 1.65...3.6V DC
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
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S29GL01GT11TFB020 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; TSOP56; parallel
Case: TSOP56
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Operating temperature: -40...105°C
Access time: 110ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Application: automotive
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GT11TFIV10 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 110ns; TSOP56; parallel
Case: TSOP56
Mounting: SMD
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 110ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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