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IR4426STRPBF INFINEON TECHNOLOGIES ir4426.pdf?fileId=5546d462533600a4015355d60b491822 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC8; 1.5A; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: SOIC8
Output current: 1.5A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
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ISA150233C03LMDSXTMA1 INFINEON TECHNOLOGIES Infineon-ISA150233C03LMDS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d2ed4aca62c5 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Mounting: SMD
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IPP030N10N5XKSA1 IPP030N10N5XKSA1 INFINEON TECHNOLOGIES Infineon-IPP030N10N5-DS-v02_03-EN.pdf?fileId=5546d4624a75e5f1014ac4e0b47c1f49 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 250W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 250W
Case: TO220-3
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 112nC
Kind of channel: enhancement
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IPP030N10N3GXKSA1 IPP030N10N3GXKSA1 INFINEON TECHNOLOGIES IPP030N10N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
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21+3.42 EUR
50+3.2 EUR
100+3.09 EUR
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IPI030N10N3GXKSA1 IPI030N10N3GXKSA1 INFINEON TECHNOLOGIES IPI030N10N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
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ISC030N10NM6ATMA1 INFINEON TECHNOLOGIES Infineon-ISC030N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bb9a9887300a4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 179A; 208W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 179A
Power dissipation: 208W
Case: PG-TDSON-8 FL
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 55nC
Kind of channel: enhancement
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IPA030N10NF2SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA030N10NF2S-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0179176bf1c41165 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 83A; 41W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 83A
Power dissipation: 41W
Case: TO220FP
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 154nC
Kind of channel: enhancement
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IRGP4066DPBF IRGP4066DPBF INFINEON TECHNOLOGIES IRGP4066DPBF.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 454W; TO247-3
Mounting: THT
Case: TO247-3
Collector current: 75A
Power dissipation: 454W
Collector-emitter voltage: 600V
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
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AUIRGP4066D1 AUIRGP4066D1 INFINEON TECHNOLOGIES AUIRGP4066D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 90A; 227W; TO247AC
Mounting: THT
Case: TO247AC
Gate charge: 225nC
Turn-off time: 320ns
Gate-emitter voltage: ±20V
Collector current: 90A
Pulsed collector current: 225A
Power dissipation: 227W
Collector-emitter voltage: 600V
Technology: Trench
Type of transistor: IGBT
Kind of package: tube
Turn-on time: 115ns
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2ED2106S06FXUMA1 2ED2106S06FXUMA1 INFINEON TECHNOLOGIES infineon-2ed2182-4-s06f-j-datasheet-en.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-8
Output current: -0.7...0.29A
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 650V
Protection: undervoltage UVP
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2ED21064S06JXUMA1 INFINEON TECHNOLOGIES Infineon-2ED2106-4-S06F-J-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d7402029e7 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-14
Output current: -0.7...0.29A
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 650V
Protection: undervoltage UVP
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IPP037N08N3GXKSA1 IPP037N08N3GXKSA1 INFINEON TECHNOLOGIES IPP037N08N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 566 Stücke:
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20+3.66 EUR
38+1.89 EUR
54+1.33 EUR
100+1.3 EUR
250+1.23 EUR
500+1.2 EUR
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IPP037N06L3GXKSA1 IPP037N06L3GXKSA1 INFINEON TECHNOLOGIES IPP037N06L3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 167W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 167W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPP030N06NF2SAKMA1 IPP030N06NF2SAKMA1 INFINEON TECHNOLOGIES Infineon-IPP030N06NF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80f4d3290180fd60b8793c83 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 119A; 150W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 119A
Power dissipation: 150W
Case: TO220-3
On-state resistance: 3.05mΩ
Mounting: THT
Gate charge: 68nC
Kind of channel: enhancement
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60+1.21 EUR
63+1.14 EUR
72+1 EUR
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SMBTA06UPNE6327HTSA1 SMBTA06UPNE6327HTSA1 INFINEON TECHNOLOGIES SMBTA06UPNE6327.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 80V; 0.5A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SC74
Mounting: SMD
Frequency: 100MHz
Kind of transistor: complementary pair
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SMBTA06E6327 SMBTA06E6327 INFINEON TECHNOLOGIES SMBTA06E6327.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
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FM24CL16B-G FM24CL16B-G INFINEON TECHNOLOGIES Infineon-FM24CL16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec99cb241e9 Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; SO8
Interface: I2C
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.65V DC
Memory: 16kb FRAM
Clock frequency: 1MHz
Memory organisation: 2kx8bit
Case: SO8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of interface: serial
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IPB024N10N5ATMA1 INFINEON TECHNOLOGIES Infineon-IPB024N10N5-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf0159ef08d94417f4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 180A; 250W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Gate-source voltage: 20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 138nC
Kind of channel: enhancement
Application: automotive industry
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S25FL032P0XMFA010 S25FL032P0XMFA010 INFINEON TECHNOLOGIES Infineon-S25FL032P_32-Mbit_3.0_V_Flash_Memory-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed4e2dd5369&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 32MbFLASH; SPI; 104MHz; 2.7÷3.6V; SO8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 32Mb FLASH
Interface: SPI
Kind of interface: serial
Mounting: SMD
Operating voltage: 2.7...3.6V
Operating frequency: 104MHz
Case: SO8
Operating temperature: -40...85°C
auf Bestellung 727 Stücke:
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S25FL064LABMFI010 S25FL064LABMFI010 INFINEON TECHNOLOGIES infineon-s25fl064l-64-mbit-8-mbyte-3-datasheet-en.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; SPI; 108MHz; 2.7÷3.6V; SO8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: SPI
Kind of interface: serial
Mounting: SMD
Operating voltage: 2.7...3.6V
Operating frequency: 108MHz
Case: SO8
Operating temperature: -40...85°C
auf Bestellung 667 Stücke:
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15+5 EUR
16+4.52 EUR
25+3.92 EUR
100+3.79 EUR
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IPB100N04S4H2ATMA1 INFINEON TECHNOLOGIES Infineon-IPP_B_I100N04S4_H2-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c2758925d17&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; D2PAK-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 115W
Case: D2PAK-3
On-state resistance: 2.1mΩ
Mounting: SMD
Gate charge: 90nC
Kind of channel: enhancement
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IPC100N04S5-2R8 IPC100N04S5-2R8 INFINEON TECHNOLOGIES IPC100N04S52R8.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 75W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 45nC
Kind of channel: enhancement
Technology: OptiMOS™ 5
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IPC100N04S5-1R9 IPC100N04S5-1R9 INFINEON TECHNOLOGIES IPC100N04S51R9.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 100W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 65nC
Kind of channel: enhancement
Technology: OptiMOS™ 5
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IPC100N04S5L-1R5 IPC100N04S5L-1R5 INFINEON TECHNOLOGIES IPC100N04S5L1R5.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 115W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 95nC
Kind of channel: enhancement
Technology: OptiMOS™ 5
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IPB100N04S303ATMA1 IPB100N04S303ATMA1 INFINEON TECHNOLOGIES IPB100N04S303.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 100A; 214W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of channel: enhancement
Technology: OptiMOS™ T
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IPC100N04S5-1R2 IPC100N04S5-1R2 INFINEON TECHNOLOGIES IPC100N04S51R2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 131nC
On-state resistance: 1.2mΩ
Power dissipation: 150W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
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IPC100N04S5-1R7 IPC100N04S5-1R7 INFINEON TECHNOLOGIES IPC100N04S51R7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 83nC
On-state resistance: 1.7mΩ
Power dissipation: 115W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
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IPC100N04S5L-1R1 IPC100N04S5L-1R1 INFINEON TECHNOLOGIES IPC100N04S5L1R1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.1mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of channel: enhancement
Technology: OptiMOS™ 5
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IPC100N04S5L-1R9 IPC100N04S5L-1R9 INFINEON TECHNOLOGIES IPC100N04S5L1R9.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 100W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 81nC
Kind of channel: enhancement
Technology: OptiMOS™ 5
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IPC100N04S5L-2R6 IPC100N04S5L-2R6 INFINEON TECHNOLOGIES IPC100N04S5L2R6.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 75W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 55nC
Kind of channel: enhancement
Technology: OptiMOS™ 5
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IAUC100N04S6L014ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N04S6L014-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c35a9690def Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 100W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
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IAUC100N04S6L020ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N04S6L020-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c5a4e5b0dfa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
Produkt ist nicht verfügbar
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IPN80R4K5P7ATMA1 IPN80R4K5P7ATMA1 INFINEON TECHNOLOGIES IPN80R4K5P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 6W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 4nC
On-state resistance: 4.5Ω
Drain current: 1A
Power dissipation: 6W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
auf Bestellung 2055 Stücke:
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75+0.96 EUR
93+0.77 EUR
106+0.68 EUR
135+0.53 EUR
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IPN80R1K4P7ATMA1 IPN80R1K4P7ATMA1 INFINEON TECHNOLOGIES IPN80R1K4P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 7W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 10nC
On-state resistance: 1.4Ω
Drain current: 2.7A
Power dissipation: 7W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
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IPN80R1K2P7ATMA1 IPN80R1K2P7ATMA1 INFINEON TECHNOLOGIES IPN80R1K2P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 6.8W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 11nC
On-state resistance: 1.2Ω
Drain current: 3.1A
Power dissipation: 6.8W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPN80R750P7ATMA1 IPN80R750P7ATMA1 INFINEON TECHNOLOGIES IPN80R750P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 7.2W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 17nC
On-state resistance: 0.75Ω
Drain current: 4.6A
Power dissipation: 7.2W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPN80R2K4P7ATMA1 IPN80R2K4P7ATMA1 INFINEON TECHNOLOGIES IPN80R2K4P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.7A; 6.3W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 8nC
On-state resistance: 2.4Ω
Drain current: 1.7A
Power dissipation: 6.3W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
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IPN80R3K3P7ATMA1 IPN80R3K3P7ATMA1 INFINEON TECHNOLOGIES IPN80R3K3P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.3A; 6.1W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 6nC
On-state resistance: 3.3Ω
Drain current: 1.3A
Power dissipation: 6.1W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPN80R600P7ATMA1 IPN80R600P7ATMA1 INFINEON TECHNOLOGIES IPN80R600P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.5A; 7.4W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 20nC
On-state resistance: 0.6Ω
Drain current: 5.5A
Power dissipation: 7.4W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IRFB7437PBF IRFB7437PBF INFINEON TECHNOLOGIES IRFB7437PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 250A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 250A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
auf Bestellung 469 Stücke:
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60+1.21 EUR
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100+0.87 EUR
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IRFB7530PBF IRFB7530PBF INFINEON TECHNOLOGIES irfs7530pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 295A; 375W; TO220AB
Case: TO220AB
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 274nC
On-state resistance: 2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 295A
Power dissipation: 375W
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20+3.62 EUR
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IRFP7530PBF IRFP7530PBF INFINEON TECHNOLOGIES irfp7530pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 281A; 341W; TO247AC
Case: TO247AC
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 274nC
On-state resistance: 2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 281A
Power dissipation: 341W
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17+4.42 EUR
24+3.02 EUR
26+2.85 EUR
27+2.72 EUR
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IPP015N04NGXKSA1 IPP015N04NGXKSA1 INFINEON TECHNOLOGIES IPP015N04NG-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
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IPP015N04NF2SAKMA1 IPP015N04NF2SAKMA1 INFINEON TECHNOLOGIES Infineon-IPP015N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c82ce56640183175b60d92ae3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 193A; 188W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 193A
Power dissipation: 188W
Case: TO220-3
On-state resistance: 1.5mΩ
Mounting: THT
Gate charge: 106nC
Kind of channel: enhancement
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47+1.53 EUR
49+1.47 EUR
57+1.27 EUR
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ISC015N04NM5ATMA1 INFINEON TECHNOLOGIES Infineon-ISC015N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e4302e0001 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 206A; 115W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 206A
Power dissipation: 115W
Case: PG-TDSON-8
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 51nC
Kind of channel: enhancement
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CYPM1111-40LQXI INFINEON TECHNOLOGIES Infineon-PMG1-S1_Datasheet_Power_Delivery_Microcontroller_Gen1-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea45a6733a Category: Integrated circuits - Unclassified
Description: CYPM1111-40LQXI
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4900+2.96 EUR
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IFX1050G IFX1050G INFINEON TECHNOLOGIES IFX1050G.pdf Category: CAN interfaces - integrated circuits
Description: IC: CAN transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; No.of rec: 1
Type of integrated circuit: CAN transceiver
Supply voltage: 4.5...5.5V DC
Case: PG-DSO-8
Interface: CAN
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 70mA
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IFX1050GVIO IFX1050GVIO INFINEON TECHNOLOGIES IFX1050GVIO.pdf Category: CAN interfaces - integrated circuits
Description: IC: CAN transceiver; 3÷5.5VDC; PG-DSO-8; -40÷125°C; No.of rec: 1
Type of integrated circuit: CAN transceiver
Supply voltage: 3...5.5V DC
Case: PG-DSO-8
Interface: CAN
Mounting: SMD
Operating temperature: -40...125°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 70mA
Produkt ist nicht verfügbar
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ITS41K0SMENHUMA1 INFINEON TECHNOLOGIES Infineon-ITS41K0S_ME_N_01092012S-DS-v01_00-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304339dcf4b1013a013d2fb0573d&ack=t Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 200mA; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.8Ω
Supply voltage: 4.9...60V DC
Operating temperature: -40...125°C
Power dissipation: 1.7W
Integrated circuit features: thermal protection
Application: automotive industry
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BSP603S2L BSP603S2L INFINEON TECHNOLOGIES BSP603S2L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5.2A; 1.8W; SOT223
Mounting: SMD
Technology: OptiMOS™
Case: SOT223
On-state resistance: 33mΩ
Power dissipation: 1.8W
Drain current: 5.2A
Gate-source voltage: ±20V
Drain-source voltage: 55V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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TLF50251EL TLF50251EL INFINEON TECHNOLOGIES TLF50251EL.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; SSOP14
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...45V DC
Output voltage: 5V DC
Output current: 0.5A
Case: SSOP14
Mounting: SMD
Frequency: 2.2MHz
Topology: buck
Number of channels: 1
Operating temperature: -40...150°C
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TLF50201EL TLF50201EL INFINEON TECHNOLOGIES TLF50201EL.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; SSOP14
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...45V DC
Output voltage: 5V DC
Output current: 0.5A
Case: SSOP14
Mounting: SMD
Frequency: 2.2MHz
Topology: buck
Number of channels: 1
Operating temperature: -40...150°C
Produkt ist nicht verfügbar
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S25FL128LAGMFI010 S25FL128LAGMFI010 INFINEON TECHNOLOGIES S25FL.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; SPI; 133MHz; 2.7÷3.6V; SO8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
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S25FL128SAGMFIG01 S25FL128SAGMFIG01 INFINEON TECHNOLOGIES Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; SPI; 133MHz; 2.7÷3.6V; SO16; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SO16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
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14+5.16 EUR
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S25FL256LAGBHA020 INFINEON TECHNOLOGIES Infineon-S25FL256L_S25FL128L_256-MB_32-MB128-MB_16-MB_3-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Case: BGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Interface: QUAD SPI
Kind of interface: serial
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Application: automotive
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S25FL256LAGBHA023 INFINEON TECHNOLOGIES Infineon-S25FL256L_S25FL128L_256-MB_32-MB128-MB_16-MB_3-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Case: BGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Interface: QUAD SPI
Kind of interface: serial
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Application: automotive
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S26KS256SDPBHA020 INFINEON TECHNOLOGIES Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Interface: HyperBus
Kind of interface: serial
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Application: automotive
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S26KS256SDPBHA023 INFINEON TECHNOLOGIES download Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Interface: HyperBus
Kind of interface: serial
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Application: automotive
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S26KS512SDPBHA020 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Interface: HyperBus
Kind of interface: serial
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Application: automotive
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S27KL0643DPBHA020 INFINEON TECHNOLOGIES Infineon-S27KL0643_S27KS0643_3.0_V_1.8_V_64_MB_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8b87c7185 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
Produkt ist nicht verfügbar
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IR4426STRPBF ir4426.pdf?fileId=5546d462533600a4015355d60b491822
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC8; 1.5A; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: SOIC8
Output current: 1.5A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
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ISA150233C03LMDSXTMA1 Infineon-ISA150233C03LMDS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d2ed4aca62c5
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Mounting: SMD
Produkt ist nicht verfügbar
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IPP030N10N5XKSA1 Infineon-IPP030N10N5-DS-v02_03-EN.pdf?fileId=5546d4624a75e5f1014ac4e0b47c1f49
IPP030N10N5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 250W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 250W
Case: TO220-3
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 112nC
Kind of channel: enhancement
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14+5.16 EUR
15+4.76 EUR
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IPP030N10N3GXKSA1 IPP030N10N3G-DTE.pdf
IPP030N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 101 Stücke:
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Anzahl Preis
15+4.96 EUR
21+3.42 EUR
50+3.2 EUR
100+3.09 EUR
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IPI030N10N3GXKSA1 IPI030N10N3G-DTE.pdf
IPI030N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
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ISC030N10NM6ATMA1 Infineon-ISC030N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bb9a9887300a4
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 179A; 208W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 179A
Power dissipation: 208W
Case: PG-TDSON-8 FL
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 55nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA030N10NF2SXKSA1 Infineon-IPA030N10NF2S-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0179176bf1c41165
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 83A; 41W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 83A
Power dissipation: 41W
Case: TO220FP
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 154nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRGP4066DPBF IRGP4066DPBF.pdf
IRGP4066DPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 454W; TO247-3
Mounting: THT
Case: TO247-3
Collector current: 75A
Power dissipation: 454W
Collector-emitter voltage: 600V
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Produkt ist nicht verfügbar
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AUIRGP4066D1 AUIRGP4066D1.pdf
AUIRGP4066D1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 90A; 227W; TO247AC
Mounting: THT
Case: TO247AC
Gate charge: 225nC
Turn-off time: 320ns
Gate-emitter voltage: ±20V
Collector current: 90A
Pulsed collector current: 225A
Power dissipation: 227W
Collector-emitter voltage: 600V
Technology: Trench
Type of transistor: IGBT
Kind of package: tube
Turn-on time: 115ns
Produkt ist nicht verfügbar
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2ED2106S06FXUMA1 infineon-2ed2182-4-s06f-j-datasheet-en.pdf
2ED2106S06FXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-8
Output current: -0.7...0.29A
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 650V
Protection: undervoltage UVP
Produkt ist nicht verfügbar
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2ED21064S06JXUMA1 Infineon-2ED2106-4-S06F-J-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d7402029e7
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-14
Output current: -0.7...0.29A
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 650V
Protection: undervoltage UVP
Produkt ist nicht verfügbar
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IPP037N08N3GXKSA1 IPP037N08N3G-DTE.pdf
IPP037N08N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 566 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.66 EUR
38+1.89 EUR
54+1.33 EUR
100+1.3 EUR
250+1.23 EUR
500+1.2 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IPP037N06L3GXKSA1 IPP037N06L3G-DTE.pdf
IPP037N06L3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 167W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 167W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP030N06NF2SAKMA1 Infineon-IPP030N06NF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80f4d3290180fd60b8793c83
IPP030N06NF2SAKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 119A; 150W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 119A
Power dissipation: 150W
Case: TO220-3
On-state resistance: 3.05mΩ
Mounting: THT
Gate charge: 68nC
Kind of channel: enhancement
auf Bestellung 108 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
52+1.4 EUR
60+1.21 EUR
63+1.14 EUR
72+1 EUR
100+0.89 EUR
Mindestbestellmenge: 52
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SMBTA06UPNE6327HTSA1 SMBTA06UPNE6327.pdf
SMBTA06UPNE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 80V; 0.5A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SC74
Mounting: SMD
Frequency: 100MHz
Kind of transistor: complementary pair
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMBTA06E6327 SMBTA06E6327.pdf
SMBTA06E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Produkt ist nicht verfügbar
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FM24CL16B-G Infineon-FM24CL16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec99cb241e9
FM24CL16B-G
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; SO8
Interface: I2C
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.65V DC
Memory: 16kb FRAM
Clock frequency: 1MHz
Memory organisation: 2kx8bit
Case: SO8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of interface: serial
Produkt ist nicht verfügbar
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IPB024N10N5ATMA1 Infineon-IPB024N10N5-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf0159ef08d94417f4
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 180A; 250W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Gate-source voltage: 20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 138nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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S25FL032P0XMFA010 Infineon-S25FL032P_32-Mbit_3.0_V_Flash_Memory-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed4e2dd5369&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL032P0XMFA010
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 32MbFLASH; SPI; 104MHz; 2.7÷3.6V; SO8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 32Mb FLASH
Interface: SPI
Kind of interface: serial
Mounting: SMD
Operating voltage: 2.7...3.6V
Operating frequency: 104MHz
Case: SO8
Operating temperature: -40...85°C
auf Bestellung 727 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.22 EUR
Mindestbestellmenge: 14
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S25FL064LABMFI010 infineon-s25fl064l-64-mbit-8-mbyte-3-datasheet-en.pdf
S25FL064LABMFI010
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; SPI; 108MHz; 2.7÷3.6V; SO8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: SPI
Kind of interface: serial
Mounting: SMD
Operating voltage: 2.7...3.6V
Operating frequency: 108MHz
Case: SO8
Operating temperature: -40...85°C
auf Bestellung 667 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5 EUR
16+4.52 EUR
25+3.92 EUR
100+3.79 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IPB100N04S4H2ATMA1 Infineon-IPP_B_I100N04S4_H2-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c2758925d17&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; D2PAK-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 115W
Case: D2PAK-3
On-state resistance: 2.1mΩ
Mounting: SMD
Gate charge: 90nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPC100N04S5-2R8 IPC100N04S52R8.pdf
IPC100N04S5-2R8
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 75W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 45nC
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IPC100N04S5-1R9 IPC100N04S51R9.pdf
IPC100N04S5-1R9
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 100W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 65nC
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IPC100N04S5L-1R5 IPC100N04S5L1R5.pdf
IPC100N04S5L-1R5
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 115W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 95nC
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IPB100N04S303ATMA1 IPB100N04S303.pdf
IPB100N04S303ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 100A; 214W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of channel: enhancement
Technology: OptiMOS™ T
Produkt ist nicht verfügbar
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IPC100N04S5-1R2 IPC100N04S51R2.pdf
IPC100N04S5-1R2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 131nC
On-state resistance: 1.2mΩ
Power dissipation: 150W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPC100N04S5-1R7 IPC100N04S51R7.pdf
IPC100N04S5-1R7
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 83nC
On-state resistance: 1.7mΩ
Power dissipation: 115W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 100A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPC100N04S5L-1R1 IPC100N04S5L1R1.pdf
IPC100N04S5L-1R1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 150W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.1mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IPC100N04S5L-1R9 IPC100N04S5L1R9.pdf
IPC100N04S5L-1R9
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 100W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 81nC
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IPC100N04S5L-2R6 IPC100N04S5L2R6.pdf
IPC100N04S5L-2R6
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 75W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 55nC
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IAUC100N04S6L014ATMA1 Infineon-IAUC100N04S6L014-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c35a9690def
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 100W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
Produkt ist nicht verfügbar
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IAUC100N04S6L020ATMA1 Infineon-IAUC100N04S6L020-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c5a4e5b0dfa
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
Produkt ist nicht verfügbar
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IPN80R4K5P7ATMA1 IPN80R4K5P7.pdf
IPN80R4K5P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 6W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 4nC
On-state resistance: 4.5Ω
Drain current: 1A
Power dissipation: 6W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
auf Bestellung 2055 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
75+0.96 EUR
93+0.77 EUR
106+0.68 EUR
135+0.53 EUR
Mindestbestellmenge: 75
Im Einkaufswagen  Stück im Wert von  UAH
IPN80R1K4P7ATMA1 IPN80R1K4P7.pdf
IPN80R1K4P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 7W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 10nC
On-state resistance: 1.4Ω
Drain current: 2.7A
Power dissipation: 7W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPN80R1K2P7ATMA1 IPN80R1K2P7.pdf
IPN80R1K2P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 6.8W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 11nC
On-state resistance: 1.2Ω
Drain current: 3.1A
Power dissipation: 6.8W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPN80R750P7ATMA1 IPN80R750P7.pdf
IPN80R750P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 7.2W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 17nC
On-state resistance: 0.75Ω
Drain current: 4.6A
Power dissipation: 7.2W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPN80R2K4P7ATMA1 IPN80R2K4P7.pdf
IPN80R2K4P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.7A; 6.3W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 8nC
On-state resistance: 2.4Ω
Drain current: 1.7A
Power dissipation: 6.3W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPN80R3K3P7ATMA1 IPN80R3K3P7.pdf
IPN80R3K3P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.3A; 6.1W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 6nC
On-state resistance: 3.3Ω
Drain current: 1.3A
Power dissipation: 6.1W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPN80R600P7ATMA1 IPN80R600P7.pdf
IPN80R600P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.5A; 7.4W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 20nC
On-state resistance: 0.6Ω
Drain current: 5.5A
Power dissipation: 7.4W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IRFB7437PBF IRFB7437PBF.pdf
IRFB7437PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 250A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 250A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
auf Bestellung 469 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
42+1.73 EUR
60+1.21 EUR
76+0.94 EUR
100+0.87 EUR
Mindestbestellmenge: 42
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IRFB7530PBF irfs7530pbf.pdf
IRFB7530PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 295A; 375W; TO220AB
Case: TO220AB
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 274nC
On-state resistance: 2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 295A
Power dissipation: 375W
auf Bestellung 33 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.19 EUR
20+3.62 EUR
30+2.45 EUR
33+2.17 EUR
Mindestbestellmenge: 18
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IRFP7530PBF irfp7530pbf.pdf
IRFP7530PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 281A; 341W; TO247AC
Case: TO247AC
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 274nC
On-state resistance: 2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 281A
Power dissipation: 341W
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.42 EUR
24+3.02 EUR
26+2.85 EUR
27+2.72 EUR
50+2.63 EUR
Mindestbestellmenge: 17
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IPP015N04NGXKSA1 IPP015N04NG-DTE.pdf
IPP015N04NGXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+23.84 EUR
Mindestbestellmenge: 3
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IPP015N04NF2SAKMA1 Infineon-IPP015N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c82ce56640183175b60d92ae3
IPP015N04NF2SAKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 193A; 188W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 193A
Power dissipation: 188W
Case: TO220-3
On-state resistance: 1.5mΩ
Mounting: THT
Gate charge: 106nC
Kind of channel: enhancement
auf Bestellung 80 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.63 EUR
47+1.53 EUR
49+1.47 EUR
57+1.27 EUR
Mindestbestellmenge: 44
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ISC015N04NM5ATMA1 Infineon-ISC015N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e4302e0001
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 206A; 115W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 206A
Power dissipation: 115W
Case: PG-TDSON-8
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 51nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CYPM1111-40LQXI Infineon-PMG1-S1_Datasheet_Power_Delivery_Microcontroller_Gen1-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea45a6733a
Hersteller: INFINEON TECHNOLOGIES
Category: Integrated circuits - Unclassified
Description: CYPM1111-40LQXI
auf Bestellung 4900 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4900+2.96 EUR
Mindestbestellmenge: 4900
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IFX1050G IFX1050G.pdf
IFX1050G
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: CAN transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; No.of rec: 1
Type of integrated circuit: CAN transceiver
Supply voltage: 4.5...5.5V DC
Case: PG-DSO-8
Interface: CAN
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 70mA
Produkt ist nicht verfügbar
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IFX1050GVIO IFX1050GVIO.pdf
IFX1050GVIO
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: CAN transceiver; 3÷5.5VDC; PG-DSO-8; -40÷125°C; No.of rec: 1
Type of integrated circuit: CAN transceiver
Supply voltage: 3...5.5V DC
Case: PG-DSO-8
Interface: CAN
Mounting: SMD
Operating temperature: -40...125°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 70mA
Produkt ist nicht verfügbar
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ITS41K0SMENHUMA1 Infineon-ITS41K0S_ME_N_01092012S-DS-v01_00-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304339dcf4b1013a013d2fb0573d&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 200mA; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.8Ω
Supply voltage: 4.9...60V DC
Operating temperature: -40...125°C
Power dissipation: 1.7W
Integrated circuit features: thermal protection
Application: automotive industry
Produkt ist nicht verfügbar
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BSP603S2L BSP603S2L.pdf
BSP603S2L
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5.2A; 1.8W; SOT223
Mounting: SMD
Technology: OptiMOS™
Case: SOT223
On-state resistance: 33mΩ
Power dissipation: 1.8W
Drain current: 5.2A
Gate-source voltage: ±20V
Drain-source voltage: 55V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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TLF50251EL TLF50251EL.pdf
TLF50251EL
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; SSOP14
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...45V DC
Output voltage: 5V DC
Output current: 0.5A
Case: SSOP14
Mounting: SMD
Frequency: 2.2MHz
Topology: buck
Number of channels: 1
Operating temperature: -40...150°C
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
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TLF50201EL TLF50201EL.pdf
TLF50201EL
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷45VDC; Uout: 5VDC; 500mA; SSOP14
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...45V DC
Output voltage: 5V DC
Output current: 0.5A
Case: SSOP14
Mounting: SMD
Frequency: 2.2MHz
Topology: buck
Number of channels: 1
Operating temperature: -40...150°C
Produkt ist nicht verfügbar
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S25FL128LAGMFI010 S25FL.pdf
S25FL128LAGMFI010
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; SPI; 133MHz; 2.7÷3.6V; SO8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
auf Bestellung 1219 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.09 EUR
Mindestbestellmenge: 12
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S25FL128SAGMFIG01 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL128SAGMFIG01
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; SPI; 133MHz; 2.7÷3.6V; SO16; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SO16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.16 EUR
Mindestbestellmenge: 14
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S25FL256LAGBHA020 Infineon-S25FL256L_S25FL128L_256-MB_32-MB128-MB_16-MB_3-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Case: BGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Interface: QUAD SPI
Kind of interface: serial
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Application: automotive
Produkt ist nicht verfügbar
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S25FL256LAGBHA023 Infineon-S25FL256L_S25FL128L_256-MB_32-MB128-MB_16-MB_3-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Case: BGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Interface: QUAD SPI
Kind of interface: serial
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Application: automotive
Produkt ist nicht verfügbar
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S26KS256SDPBHA020 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Interface: HyperBus
Kind of interface: serial
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Application: automotive
Produkt ist nicht verfügbar
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S26KS256SDPBHA023 download
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Interface: HyperBus
Kind of interface: serial
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Application: automotive
Produkt ist nicht verfügbar
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S26KS512SDPBHA020
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Interface: HyperBus
Kind of interface: serial
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Application: automotive
Produkt ist nicht verfügbar
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S27KL0643DPBHA020 Infineon-S27KL0643_S27KS0643_3.0_V_1.8_V_64_MB_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8b87c7185
Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
Produkt ist nicht verfügbar
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