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IPS80R900P7AKMA1 IPS80R900P7AKMA1 INFINEON TECHNOLOGIES infineon-ips80r900p7-datasheet-en.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK SL; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: IPAK SL
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of channel: enhancement
Version: ESD
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IRLB4030PBF IRLB4030PBF INFINEON TECHNOLOGIES irlb4030pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 370W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 4.3mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 171 Stücke:
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21+3.55 EUR
27+2.67 EUR
50+1.87 EUR
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IRLB8314PBF IRLB8314PBF INFINEON TECHNOLOGIES irlb8314pbf.pdf?fileId=5546d462533600a4015356604d6f258f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 664A; 125W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 664A
auf Bestellung 157 Stücke:
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48+1.52 EUR
96+0.75 EUR
116+0.62 EUR
125+0.57 EUR
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IPP12CN10LGXKSA1 IPP12CN10LGXKSA1 INFINEON TECHNOLOGIES IPP12CN10LG-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 69A; 125W; PG-TO220-3
Mounting: THT
Technology: OptiMOS™ 2
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO220-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 12mΩ
Gate-source voltage: ±20V
Drain current: 69A
Drain-source voltage: 100V
Power dissipation: 125W
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IRS2008SPBF IRS2008SPBF INFINEON TECHNOLOGIES IRS2008S.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 750ns
Turn-off time: 180ns
Power: 625mW
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IRS2005STRPBF IRS2005STRPBF INFINEON TECHNOLOGIES infineon-irs2005s-m-datasheet-en.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 200V
Turn-on time: 160ns
Turn-off time: 150ns
Power: 625mW
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IRS2003STRPBF IRS2003STRPBF INFINEON TECHNOLOGIES irs2003pbf.pdf?fileId=5546d462533600a401535675afec2780 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 200V
Turn-on time: 750ns
Turn-off time: 180ns
Power: 625mW
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IRS2007SPBF IRS2007SPBF INFINEON TECHNOLOGIES IRS2007SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 160ns
Turn-off time: 150ns
Power: 625mW
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IRS2001STRPBF INFINEON TECHNOLOGIES irs2001pbf.pdf?fileId=5546d462533600a401535675a760277e Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 130mA; Ch: 2; 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 0.13A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
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IRS2011STRPBF INFINEON TECHNOLOGIES INFN-S-A0001467921-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1A; Ch: 2; 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 1A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
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IRS2004STRPBF INFINEON TECHNOLOGIES irs2004pbf.pdf?fileId=5546d462533600a401535675b86b2782 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 130mA; Ch: 2; MOSFET; 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 0.13A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Integrated circuit features: MOSFET
Produkt ist nicht verfügbar
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IRS2093MTRPBF INFINEON TECHNOLOGIES IRS2093MTRPBF.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 10÷15VDC; Ch: 4; Amp.class: D; MLPQ48
Type of integrated circuit: audio amplifier
Mounting: SMD
Supply voltage: 10...15V DC
Number of channels: 4
Amplifier class: D
Case: MLPQ48
Kind of package: reel; tape
Produkt ist nicht verfügbar
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IRS2005MTRPBF INFINEON TECHNOLOGIES infineon-irs2005s-m-datasheet-en.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; half-bridge; VFQFN14; 600mA; Ch: 2; MOSFET
Type of integrated circuit: driver
Mounting: SMD
Number of channels: 2
Case: VFQFN14
Turn-on time: 160ns
Power dissipation: 2.1W
Voltage class: 200V
Kind of integrated circuit: half-bridge
Topology: H-bridge
Integrated circuit features: MOSFET
Operating temperature: -40...150°C
Output current: 0.6A
Pulse fall time: 30ns
Impulse rise time: 70ns
auf Bestellung 3000 Stücke:
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3000+0.73 EUR
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ICE2PCS05GXUMA1 ICE2PCS05GXUMA1 INFINEON TECHNOLOGIES INFNS16600-1.pdf?t.download=true&u=5oefqw Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; -1.5÷2A; 20÷250kHz; PG-DSO-8; boost; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -40...125°C
Frequency: 20...250kHz
Application: SMPS
Output current: -1.5...2A
Operating voltage: 11...25V DC
Duty cycle factor: 0...98.5%
Topology: boost
Input voltage: 85...265V
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72+1 EUR
85+0.84 EUR
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ICE2PCS01GXUMA1 ICE2PCS01GXUMA1 INFINEON TECHNOLOGIES ICE2PCS01G.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; -1.5÷2A; 50÷250kHz; PG-DSO-8; boost; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -40...125°C
Frequency: 50...250kHz
Application: SMPS
Output current: -1.5...2A
Operating voltage: 11...25V DC
Duty cycle factor: 0...98.5%
Topology: boost
Input voltage: 80...265V
auf Bestellung 203 Stücke:
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59+1.22 EUR
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ICE2A180ZXKLA1
+1
 		ICE2A180ZXKLA1 INFINEON TECHNOLOGIES ICE2A265.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 4.1A; 100kHz; Ch: 1; DIP7; flyback; 0÷77%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 0.1MHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 800V
Duty cycle factor: 0...77%
Application: SMPS
Operating voltage: 8.5...21V DC
Power: 29/17W
Output current: 4.1A
Produkt ist nicht verfügbar
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IRFL024NTRPBF IRFL024NTRPBF INFINEON TECHNOLOGIES irfl024npbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CY7C1520KV18-333BZXI INFINEON TECHNOLOGIES Infineon-CY7C1518KV18_CY7C1520KV18_72-Mbit_DDR_II_SRAM_Two-Word_Burst_Architecture-DataSheet-v23_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec156903611 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 333MHz
Produkt ist nicht verfügbar
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1ED020I12F2XUMA1 1ED020I12F2XUMA1 INFINEON TECHNOLOGIES 1ED020I12-F2.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Topology: single transistor
Mounting: SMD
Case: PG-DSO-16-15
Kind of package: reel; tape
Protection: undervoltage UVP
Output current: -2...2A
Supply voltage: 0...28V; 4.5...5.5V
Number of channels: 1
Voltage class: 0.6/1.2kV
Integrated circuit features: active Miller clamp; galvanically isolated
auf Bestellung 798 Stücke:
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15+4.79 EUR
18+4.1 EUR
20+3.76 EUR
25+3.42 EUR
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1ED020I12FA2XUMA2 INFINEON TECHNOLOGIES infineon-1ed020i12-b2-datasheet-en.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Topology: single transistor
Mounting: SMD
Case: PG-DSO-20
Kind of package: reel; tape
Protection: undervoltage UVP
Output current: -2...2A
Supply voltage: 0...28V; 4.5...5.5V
Number of channels: 1
Voltage class: 0.6/1.2kV
Integrated circuit features: active Miller clamp; galvanically isolated
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1ED020I12FXUMA2 INFINEON TECHNOLOGIES infineon-1ed020i12-b2-datasheet-en.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; -2÷2A; Ch: 1
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Mounting: SMD
Case: PG-DSO-16-15
Kind of package: reel; tape
Protection: undervoltage UVP
Output current: -2...2A
Supply voltage: 0...28V; 4.5...5.5V
Number of channels: 1
Voltage class: 0.6/1.2kV
Integrated circuit features: active Miller clamp; galvanically isolated
Produkt ist nicht verfügbar
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IFS200B12N3E4PB37BPSA1 INFINEON TECHNOLOGIES Category: IGBT modules
Description: Module: IGBT; NTC thermistor; AG-ECONO3B; Inverter
Technology: Field Stop; Trench
Type of semiconductor module: IGBT
Application: Inverter
Topology: NTC thermistor
Case: AG-ECONO3B
Produkt ist nicht verfügbar
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2ED020I12-FI 2ED020I12-FI INFINEON TECHNOLOGIES 10027685.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-side,IGBT gate driver; -2÷1A
Type of integrated circuit: driver
Topology: IGBT half-bridge
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-18
Output current: -2...1A
Number of channels: 2
Integrated circuit features: built-in comparator; built-in operational amplifier; integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0...5V; 14...18V
Voltage class: 1.2kV
Protection: undervoltage UVP
auf Bestellung 309 Stücke:
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15+4.99 EUR
22+3.32 EUR
25+3.03 EUR
100+2.65 EUR
250+2.39 EUR
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2ED020I12F2XUMA1 INFINEON TECHNOLOGIES infineon-2ed020i12-f2-datasheet-en.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; half-bridge; PG-DSO-36; 2A; Ch: 2; MOSFET; 1W
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: half-bridge
Case: PG-DSO-36
Output current: 2A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Voltage class: 1.2kV
Pulse fall time: 50ns
Turn-on time: 170ns
Impulse rise time: 30ns
Operating temperature: -40...150°C
Maximum output current: 2A
Power dissipation: 1W
auf Bestellung 1000 Stücke:
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1000+5.89 EUR
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BSP613PH6327XTSA1 BSP613PH6327XTSA1 INFINEON TECHNOLOGIES BSP613PH6327XTSA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.9A; 1.8W; PG-SOT223
Mounting: SMD
Kind of channel: enhancement
Case: PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.9A
On-state resistance: 0.13Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
auf Bestellung 264 Stücke:
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50+1.46 EUR
70+1.03 EUR
79+0.92 EUR
100+0.79 EUR
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IPD060N03LGATMA1 IPD060N03LGATMA1 INFINEON TECHNOLOGIES IPD060N03LG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 43A; 56W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 43A
Power dissipation: 56W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2392 Stücke:
Lieferzeit 14-21 Tag (e)
81+0.89 EUR
92+0.78 EUR
101+0.71 EUR
129+0.56 EUR
133+0.54 EUR
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IRFP4227PBF IRFP4227PBF INFINEON TECHNOLOGIES irfp4227pbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; 330W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Power dissipation: 330W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7490TRPBF INFINEON TECHNOLOGIES irf7490pbf.pdf?fileId=5546d462533600a4015355ffaf0b1c38 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.4A; SO8
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SO8
Polarisation: unipolar
Drain current: 5.4A
Drain-source voltage: 100V
Produkt ist nicht verfügbar
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IGCM15F60GA IGCM15F60GA INFINEON TECHNOLOGIES IGCM15F60GA.pdf Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: PG-MDIP24
Output current: -15...15A
Mounting: THT
Operating temperature: -40...125°C
Technology: ClPOS™ Mini; TRENCHSTOP™
Kind of package: tube
Protection: anti-overload OPP; undervoltage UVP
Operating voltage: 13.5...18.5/0...400V DC
Power dissipation: 29W
Voltage class: 600V
Topology: IGBT three-phase bridge; thermistor
Frequency: 20kHz
Integrated circuit features: integrated bootstrap functionality
auf Bestellung 19 Stücke:
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5+14.47 EUR
10+11.91 EUR
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IKCM15F60GAXKMA1 INFINEON TECHNOLOGIES Infineon-IKCM15F60GA-DS-v01_02-EN.pdf?fileId=5546d4624fb7fef2014fcb43b29e78c1 Category: Motor and PWM drivers
Description: IC: driver; half-bridge; DIP24; 15A; Iout max: 15A
Type of integrated circuit: driver
Kind of integrated circuit: half-bridge
Case: DIP24
Output current: 15A
Mounting: THT
Operating temperature: -40...125°C
Maximum output current: 15A
Produkt ist nicht verfügbar
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AUIRFB8407 AUIRFB8407 INFINEON TECHNOLOGIES AUIRFB8407.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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AUIRFSL8407 AUIRFSL8407 INFINEON TECHNOLOGIES AUIRFSL8407.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 230W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: THT
Gate charge: 150nC
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IPD040N03LGATMA1 IPD040N03LGATMA1 INFINEON TECHNOLOGIES IPD040N03LG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 79A
Power dissipation: 94W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 2247 Stücke:
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52+1.39 EUR
82+0.88 EUR
120+0.6 EUR
500+0.48 EUR
1000+0.44 EUR
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ISZ040N03L5ISATMA1 INFINEON TECHNOLOGIES Infineon-ISZ040N03L5IS-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8d91c970997 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 37W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 37W
Case: PG-TDSON-8
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TLE7258SJXUMA1 TLE7258SJXUMA1 INFINEON TECHNOLOGIES TLE7258.pdf Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-DSO-8
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 3mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 5.5...18V DC
Interface: LIN
auf Bestellung 2398 Stücke:
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76+0.94 EUR
108+0.67 EUR
119+0.6 EUR
122+0.59 EUR
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TLE7259-3GE TLE7259-3GE INFINEON TECHNOLOGIES TLE7259-3.pdf Category: ETHERNET interfaces -integrated circuits
Description: IC: interface; transceiver; LIN; PG-DSO-8; 5.5÷27VDC; No.of rec: 1
Kind of package: reel; tape
Mounting: SMD
Type of integrated circuit: interface
Case: PG-DSO-8
Kind of integrated circuit: transceiver
Operating temperature: -40...150°C
DC supply current: 5mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 5.5...27V DC
Interface: LIN
auf Bestellung 2328 Stücke:
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55+1.3 EUR
61+1.17 EUR
70+1.03 EUR
100+0.94 EUR
500+0.87 EUR
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TLE7181EMXUMA1 TLE7181EMXUMA1 INFINEON TECHNOLOGIES TLE7181EM.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge,push-pull; MOSFET gate driver; SSOP24; Ch: 4
Type of integrated circuit: driver
Topology: H-bridge; push-pull
Kind of integrated circuit: MOSFET gate driver
Case: SSOP24
Number of channels: 4
Supply voltage: 7...34V DC
Mounting: SMD
Operating temperature: -40...150°C
Turn-on time: 250ns
Turn-off time: 200ns
Kind of output: non-inverting
Produkt ist nicht verfügbar
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TLE7250VSJXUMA1 TLE7250VSJXUMA1 INFINEON TECHNOLOGIES TLE7250V.pdf Category: CAN interfaces - integrated circuits
Description: IC: CAN transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; No.of rec: 1
Type of integrated circuit: CAN transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 4.5...5.5V DC
Interface: CAN
Produkt ist nicht verfügbar
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TLE7268SKXUMA1 TLE7268SKXUMA1 INFINEON TECHNOLOGIES TLE7268LCXUMA1.pdf Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-DSO-14
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-14
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 2
Number of receivers: 2
Supply voltage: 5.5...40V DC
Interface: LIN
Produkt ist nicht verfügbar
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TLE7251VSJXUMA1 TLE7251VSJXUMA1 INFINEON TECHNOLOGIES TLE7251V.pdf Category: CAN interfaces - integrated circuits
Description: IC: CAN transceiver; 3÷5.5VDC; PG-DSO-8; -40÷150°C; No.of rec: 1
Type of integrated circuit: CAN transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 3...5.5V DC
Interface: CAN
Produkt ist nicht verfügbar
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TLE7182EMXUMA1 TLE7182EMXUMA1 INFINEON TECHNOLOGIES TLE7182EM.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge,push-pull; MOSFET gate driver; SSOP24; Ch: 4
Type of integrated circuit: driver
Topology: H-bridge; push-pull
Kind of integrated circuit: MOSFET gate driver
Case: SSOP24
Number of channels: 4
Supply voltage: 7...34V DC
Mounting: SMD
Operating temperature: -40...150°C
Turn-on time: 250ns
Turn-off time: 200ns
Produkt ist nicht verfügbar
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TLE7230RAUMA1 INFINEON TECHNOLOGIES Infineon-TLE7230R-DS-v03_04-EN.pdf?fileId=5546d4625a888733015aa2e2c9520f8a Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2A; Ch: 8; N-Channel; SMD; PG-DSO-36
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2A
Number of channels: 8
Kind of output: N-Channel
Mounting: SMD
Case: PG-DSO-36
On-state resistance: 0.8Ω
Operating temperature: -40...150°C
Application: automotive industry
Integrated circuit features: thermal protection
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
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TLE7250SJXUMA1 TLE7250SJXUMA1 INFINEON TECHNOLOGIES TLE7250.pdf Category: CAN interfaces - integrated circuits
Description: IC: CAN transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; No.of rec: 1
Type of integrated circuit: CAN transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 4.5...5.5V DC
Interface: CAN
Produkt ist nicht verfügbar
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TLE7250XSJXUMA1 TLE7250XSJXUMA1 INFINEON TECHNOLOGIES TLE7250X.pdf Category: CAN interfaces - integrated circuits
Description: IC: CAN transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; No.of rec: 1
Type of integrated circuit: CAN transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 4.5...5.5V DC
Interface: CAN
Produkt ist nicht verfügbar
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TLE7258DXUMA1 TLE7258DXUMA1 INFINEON TECHNOLOGIES TLE7258D.pdf Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-TSON-8
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-TSON-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 3mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 5.5...18V DC
Interface: LIN
Produkt ist nicht verfügbar
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TLE7268LCXUMA1 INFINEON TECHNOLOGIES TLE7268LCXUMA1.pdf Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-TSON-14
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-TSON-14
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 2
Number of receivers: 2
Supply voltage: 5.5...40V DC
Interface: LIN
Produkt ist nicht verfügbar
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TLE75602ESDXUMA1 INFINEON TECHNOLOGIES Infineon-TLE75602-ESD-DataSheet-v01_10-EN.pdf?fileId=5546d4626102d35a0161099b14d97907 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 330mA; Ch: 14; N-Channel; SMD; TSSOP24
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.33A
Number of channels: 14
Kind of output: N-Channel
Mounting: SMD
Case: TSSOP24
On-state resistance: 1Ω
Operating temperature: -40...150°C
Application: automotive industry
Produkt ist nicht verfügbar
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TLE7250GVIOXUMA2 INFINEON TECHNOLOGIES Infineon-TLE7250GVIO-DS-v01_10-EN.pdf?fileId=5546d46259d9a4bf015a3cf633b45e56 Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 1Mbps; SOIC8; No.of rec: 1
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: SOIC8
Application: automotive industry
Number of receivers: 1
Interface: CAN; half duplex
Data transfer rate: 1Mbps
auf Bestellung 40000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+1.63 EUR
Mindestbestellmenge: 2500
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TLE7184FXUMA2 INFINEON TECHNOLOGIES Infineon-TLE7184F-DS-v01_00-en.pdf?folderId=db3a3043156fd5730116144c5d101c30&fileId=db3a30431ed1d7b2011ee035c2f23e81&ack=t Category: Motor and PWM drivers
Description: IC: driver; H-bridge; MOSFET; PWM; VQFN48; 350mA; 12.5V
Type of integrated circuit: driver
Topology: H-bridge
Interface: PWM
Case: VQFN48
Output current: 0.35A
Mounting: SMD
Operating temperature: -40...150°C
Technology: MOSFET
DC supply current: 19mA
Application: automotive industry
Integrated circuit features: motor controller
Output voltage: 12.5V
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
2000+4.7 EUR
Mindestbestellmenge: 2000
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BSS139IXTSA1 INFINEON TECHNOLOGIES Infineon-BSS139I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a421f99f1d4f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 250V; 100mA; 360mW; SOT23-3; ESD
Type of transistor: N-MOSFET
Drain-source voltage: 250V
Drain current: 0.1A
Power dissipation: 0.36W
Case: SOT23-3
Gate-source voltage: 20V
On-state resistance: 14Ω
Mounting: SMD
Gate charge: 2.3nC
Application: automotive industry
Version: ESD
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.086 EUR
Mindestbestellmenge: 3000
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IPA037N08N3GXKSA1 IPA037N08N3GXKSA1 INFINEON TECHNOLOGIES IPA037N08N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 75A; 41W; TO220FP
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Kind of package: tube
Case: TO220FP
Polarisation: unipolar
On-state resistance: 3.7mΩ
Gate-source voltage: ±20V
Power dissipation: 41W
Drain current: 75A
Drain-source voltage: 80V
auf Bestellung 18 Stücke:
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18+3.98 EUR
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BSP373NH6327XTSA1 BSP373NH6327XTSA1 INFINEON TECHNOLOGIES BSP373NH6327-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
auf Bestellung 1205 Stücke:
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69+1.04 EUR
109+0.66 EUR
152+0.47 EUR
Mindestbestellmenge: 69
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IPB019N08NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPB019N08NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f4b169ef1afe Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 166A; 250W; D2PAK,TO263
Mounting: SMD
Case: D2PAK; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 124nC
On-state resistance: 1.95mΩ
Power dissipation: 250W
Drain-source voltage: 80V
Drain current: 166A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CY7C1354C-166AXC INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Mounting: SMD
Supply voltage: 3.135...3.6V DC
Case: TQFP100
Operating temperature: 0...70°C
Kind of package: in-tray
Kind of interface: parallel
Kind of memory: SRAM
Memory: 9Mb SRAM
Frequency: 166MHz
Memory organisation: 256kx36bit
Produkt ist nicht verfügbar
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CY7C1354C-166AXCT INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Mounting: SMD
Supply voltage: 3.135...3.6V DC
Case: TQFP100
Operating temperature: 0...70°C
Kind of package: reel; tape
Kind of interface: parallel
Kind of memory: SRAM
Memory: 9Mb SRAM
Frequency: 166MHz
Memory organisation: 256kx36bit
Produkt ist nicht verfügbar
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CY7C1354C-166AXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Mounting: SMD
Supply voltage: 3.135...3.6V DC
Case: TQFP100
Operating temperature: -40...85°C
Kind of package: in-tray
Kind of interface: parallel
Kind of memory: SRAM
Memory: 9Mb SRAM
Frequency: 166MHz
Memory organisation: 256kx36bit
Produkt ist nicht verfügbar
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CY7C1354C-166AXIT INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Mounting: SMD
Supply voltage: 3.135...3.6V DC
Case: TQFP100
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Kind of memory: SRAM
Memory: 9Mb SRAM
Frequency: 166MHz
Memory organisation: 256kx36bit
Produkt ist nicht verfügbar
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CY7C1356C-166AXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Mounting: SMD
Supply voltage: 3.135...3.6V DC
Case: TQFP100
Operating temperature: -40...85°C
Kind of package: in-tray
Kind of interface: parallel
Kind of memory: SRAM
Memory: 9Mb SRAM
Frequency: 166MHz
Memory organisation: 512kx18bit
Produkt ist nicht verfügbar
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CY7C1360C-166AXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Mounting: SMD
Supply voltage: 3.135...3.6V DC
Case: TQFP100
Operating temperature: -40...85°C
Kind of package: in-tray
Kind of interface: parallel
Kind of memory: SRAM
Memory: 9Mb SRAM
Frequency: 166MHz
Memory organisation: 256kx36bit
Produkt ist nicht verfügbar
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IKQ75N120CS6XKSA1 IKQ75N120CS6XKSA1 INFINEON TECHNOLOGIES IKQ75N120CS6XKSA1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 440W; PG-TO247-3-46
Mounting: THT
Kind of package: tube
Gate charge: 530nC
Collector current: 75A
Gate-emitter voltage: ±20V
Power dissipation: 440W
Pulsed collector current: 300A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 6
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: PG-TO247-3-46
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.05 EUR
10+7.15 EUR
Mindestbestellmenge: 9
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IPS80R900P7AKMA1 infineon-ips80r900p7-datasheet-en.pdf
IPS80R900P7AKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK SL; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: IPAK SL
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of channel: enhancement
Version: ESD
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+23.84 EUR
Mindestbestellmenge: 3
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IRLB4030PBF irlb4030pbf.pdf
IRLB4030PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 370W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 4.3mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 171 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.76 EUR
21+3.55 EUR
27+2.67 EUR
50+1.87 EUR
100+1.77 EUR
Mindestbestellmenge: 20
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IRLB8314PBF irlb8314pbf.pdf?fileId=5546d462533600a4015356604d6f258f
IRLB8314PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 664A; 125W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 664A
auf Bestellung 157 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
48+1.52 EUR
96+0.75 EUR
116+0.62 EUR
125+0.57 EUR
Mindestbestellmenge: 48
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IPP12CN10LGXKSA1 IPP12CN10LG-DTE.pdf
IPP12CN10LGXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 69A; 125W; PG-TO220-3
Mounting: THT
Technology: OptiMOS™ 2
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO220-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 12mΩ
Gate-source voltage: ±20V
Drain current: 69A
Drain-source voltage: 100V
Power dissipation: 125W
Produkt ist nicht verfügbar
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IRS2008SPBF IRS2008S.pdf
IRS2008SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 750ns
Turn-off time: 180ns
Power: 625mW
Produkt ist nicht verfügbar
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IRS2005STRPBF infineon-irs2005s-m-datasheet-en.pdf
IRS2005STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 200V
Turn-on time: 160ns
Turn-off time: 150ns
Power: 625mW
Produkt ist nicht verfügbar
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IRS2003STRPBF irs2003pbf.pdf?fileId=5546d462533600a401535675afec2780
IRS2003STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 200V
Turn-on time: 750ns
Turn-off time: 180ns
Power: 625mW
Produkt ist nicht verfügbar
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IRS2007SPBF IRS2007SPBF.pdf
IRS2007SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 160ns
Turn-off time: 150ns
Power: 625mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2001STRPBF irs2001pbf.pdf?fileId=5546d462533600a401535675a760277e
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 130mA; Ch: 2; 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 0.13A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Produkt ist nicht verfügbar
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IRS2011STRPBF INFN-S-A0001467921-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1A; Ch: 2; 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 1A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Produkt ist nicht verfügbar
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IRS2004STRPBF irs2004pbf.pdf?fileId=5546d462533600a401535675b86b2782
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 130mA; Ch: 2; MOSFET; 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 0.13A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Integrated circuit features: MOSFET
Produkt ist nicht verfügbar
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IRS2093MTRPBF IRS2093MTRPBF.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 10÷15VDC; Ch: 4; Amp.class: D; MLPQ48
Type of integrated circuit: audio amplifier
Mounting: SMD
Supply voltage: 10...15V DC
Number of channels: 4
Amplifier class: D
Case: MLPQ48
Kind of package: reel; tape
Produkt ist nicht verfügbar
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IRS2005MTRPBF infineon-irs2005s-m-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; half-bridge; VFQFN14; 600mA; Ch: 2; MOSFET
Type of integrated circuit: driver
Mounting: SMD
Number of channels: 2
Case: VFQFN14
Turn-on time: 160ns
Power dissipation: 2.1W
Voltage class: 200V
Kind of integrated circuit: half-bridge
Topology: H-bridge
Integrated circuit features: MOSFET
Operating temperature: -40...150°C
Output current: 0.6A
Pulse fall time: 30ns
Impulse rise time: 70ns
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.73 EUR
Mindestbestellmenge: 3000
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ICE2PCS05GXUMA1 INFNS16600-1.pdf?t.download=true&u=5oefqw
ICE2PCS05GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; -1.5÷2A; 20÷250kHz; PG-DSO-8; boost; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -40...125°C
Frequency: 20...250kHz
Application: SMPS
Output current: -1.5...2A
Operating voltage: 11...25V DC
Duty cycle factor: 0...98.5%
Topology: boost
Input voltage: 85...265V
auf Bestellung 2241 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
72+1 EUR
85+0.84 EUR
Mindestbestellmenge: 72
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ICE2PCS01GXUMA1 ICE2PCS01G.pdf
ICE2PCS01GXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; -1.5÷2A; 50÷250kHz; PG-DSO-8; boost; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -40...125°C
Frequency: 50...250kHz
Application: SMPS
Output current: -1.5...2A
Operating voltage: 11...25V DC
Duty cycle factor: 0...98.5%
Topology: boost
Input voltage: 80...265V
auf Bestellung 203 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
59+1.22 EUR
Mindestbestellmenge: 59
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ICE2A180ZXKLA1 ICE2A265.pdf
ICE2A180ZXKLA1
+1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 4.1A; 100kHz; Ch: 1; DIP7; flyback; 0÷77%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 0.1MHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 800V
Duty cycle factor: 0...77%
Application: SMPS
Operating voltage: 8.5...21V DC
Power: 29/17W
Output current: 4.1A
Produkt ist nicht verfügbar
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IRFL024NTRPBF irfl024npbf.pdf
IRFL024NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1520KV18-333BZXI Infineon-CY7C1518KV18_CY7C1520KV18_72-Mbit_DDR_II_SRAM_Two-Word_Burst_Architecture-DataSheet-v23_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec156903611
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 333MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1ED020I12F2XUMA1 1ED020I12-F2.pdf
1ED020I12F2XUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Topology: single transistor
Mounting: SMD
Case: PG-DSO-16-15
Kind of package: reel; tape
Protection: undervoltage UVP
Output current: -2...2A
Supply voltage: 0...28V; 4.5...5.5V
Number of channels: 1
Voltage class: 0.6/1.2kV
Integrated circuit features: active Miller clamp; galvanically isolated
auf Bestellung 798 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.79 EUR
18+4.1 EUR
20+3.76 EUR
25+3.42 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
1ED020I12FA2XUMA2 infineon-1ed020i12-b2-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Topology: single transistor
Mounting: SMD
Case: PG-DSO-20
Kind of package: reel; tape
Protection: undervoltage UVP
Output current: -2...2A
Supply voltage: 0...28V; 4.5...5.5V
Number of channels: 1
Voltage class: 0.6/1.2kV
Integrated circuit features: active Miller clamp; galvanically isolated
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1ED020I12FXUMA2 infineon-1ed020i12-b2-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; -2÷2A; Ch: 1
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Mounting: SMD
Case: PG-DSO-16-15
Kind of package: reel; tape
Protection: undervoltage UVP
Output current: -2...2A
Supply voltage: 0...28V; 4.5...5.5V
Number of channels: 1
Voltage class: 0.6/1.2kV
Integrated circuit features: active Miller clamp; galvanically isolated
Produkt ist nicht verfügbar
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IFS200B12N3E4PB37BPSA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; NTC thermistor; AG-ECONO3B; Inverter
Technology: Field Stop; Trench
Type of semiconductor module: IGBT
Application: Inverter
Topology: NTC thermistor
Case: AG-ECONO3B
Produkt ist nicht verfügbar
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2ED020I12-FI 10027685.pdf
2ED020I12-FI
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-side,IGBT gate driver; -2÷1A
Type of integrated circuit: driver
Topology: IGBT half-bridge
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-18
Output current: -2...1A
Number of channels: 2
Integrated circuit features: built-in comparator; built-in operational amplifier; integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0...5V; 14...18V
Voltage class: 1.2kV
Protection: undervoltage UVP
auf Bestellung 309 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.99 EUR
22+3.32 EUR
25+3.03 EUR
100+2.65 EUR
250+2.39 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
2ED020I12F2XUMA1 infineon-2ed020i12-f2-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; half-bridge; PG-DSO-36; 2A; Ch: 2; MOSFET; 1W
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: half-bridge
Case: PG-DSO-36
Output current: 2A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Voltage class: 1.2kV
Pulse fall time: 50ns
Turn-on time: 170ns
Impulse rise time: 30ns
Operating temperature: -40...150°C
Maximum output current: 2A
Power dissipation: 1W
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+5.89 EUR
Mindestbestellmenge: 1000
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BSP613PH6327XTSA1 BSP613PH6327XTSA1-dte.pdf
BSP613PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.9A; 1.8W; PG-SOT223
Mounting: SMD
Kind of channel: enhancement
Case: PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.9A
On-state resistance: 0.13Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
auf Bestellung 264 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.46 EUR
70+1.03 EUR
79+0.92 EUR
100+0.79 EUR
Mindestbestellmenge: 50
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IPD060N03LGATMA1 IPD060N03LG-DTE.pdf
IPD060N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 43A; 56W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 43A
Power dissipation: 56W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2392 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
81+0.89 EUR
92+0.78 EUR
101+0.71 EUR
129+0.56 EUR
133+0.54 EUR
Mindestbestellmenge: 81
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IRFP4227PBF description irfp4227pbf.pdf
IRFP4227PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; 330W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Power dissipation: 330W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7490TRPBF irf7490pbf.pdf?fileId=5546d462533600a4015355ffaf0b1c38
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.4A; SO8
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SO8
Polarisation: unipolar
Drain current: 5.4A
Drain-source voltage: 100V
Produkt ist nicht verfügbar
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IGCM15F60GA IGCM15F60GA.pdf
IGCM15F60GA
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: PG-MDIP24
Output current: -15...15A
Mounting: THT
Operating temperature: -40...125°C
Technology: ClPOS™ Mini; TRENCHSTOP™
Kind of package: tube
Protection: anti-overload OPP; undervoltage UVP
Operating voltage: 13.5...18.5/0...400V DC
Power dissipation: 29W
Voltage class: 600V
Topology: IGBT three-phase bridge; thermistor
Frequency: 20kHz
Integrated circuit features: integrated bootstrap functionality
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.47 EUR
10+11.91 EUR
Mindestbestellmenge: 5
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IKCM15F60GAXKMA1 Infineon-IKCM15F60GA-DS-v01_02-EN.pdf?fileId=5546d4624fb7fef2014fcb43b29e78c1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; half-bridge; DIP24; 15A; Iout max: 15A
Type of integrated circuit: driver
Kind of integrated circuit: half-bridge
Case: DIP24
Output current: 15A
Mounting: THT
Operating temperature: -40...125°C
Maximum output current: 15A
Produkt ist nicht verfügbar
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AUIRFB8407 AUIRFB8407.pdf
AUIRFB8407
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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AUIRFSL8407 AUIRFSL8407.pdf
AUIRFSL8407
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 230W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: THT
Gate charge: 150nC
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IPD040N03LGATMA1 IPD040N03LG-DTE.pdf
IPD040N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 79A
Power dissipation: 94W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 2247 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
52+1.39 EUR
82+0.88 EUR
120+0.6 EUR
500+0.48 EUR
1000+0.44 EUR
Mindestbestellmenge: 52
Im Einkaufswagen  Stück im Wert von  UAH
ISZ040N03L5ISATMA1 Infineon-ISZ040N03L5IS-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8d91c970997
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 37W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 37W
Case: PG-TDSON-8
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TLE7258SJXUMA1 TLE7258.pdf
TLE7258SJXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-DSO-8
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 3mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 5.5...18V DC
Interface: LIN
auf Bestellung 2398 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
76+0.94 EUR
108+0.67 EUR
119+0.6 EUR
122+0.59 EUR
Mindestbestellmenge: 76
Im Einkaufswagen  Stück im Wert von  UAH
TLE7259-3GE TLE7259-3.pdf
TLE7259-3GE
Hersteller: INFINEON TECHNOLOGIES
Category: ETHERNET interfaces -integrated circuits
Description: IC: interface; transceiver; LIN; PG-DSO-8; 5.5÷27VDC; No.of rec: 1
Kind of package: reel; tape
Mounting: SMD
Type of integrated circuit: interface
Case: PG-DSO-8
Kind of integrated circuit: transceiver
Operating temperature: -40...150°C
DC supply current: 5mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 5.5...27V DC
Interface: LIN
auf Bestellung 2328 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.3 EUR
61+1.17 EUR
70+1.03 EUR
100+0.94 EUR
500+0.87 EUR
Mindestbestellmenge: 55
Im Einkaufswagen  Stück im Wert von  UAH
TLE7181EMXUMA1 TLE7181EM.pdf
TLE7181EMXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge,push-pull; MOSFET gate driver; SSOP24; Ch: 4
Type of integrated circuit: driver
Topology: H-bridge; push-pull
Kind of integrated circuit: MOSFET gate driver
Case: SSOP24
Number of channels: 4
Supply voltage: 7...34V DC
Mounting: SMD
Operating temperature: -40...150°C
Turn-on time: 250ns
Turn-off time: 200ns
Kind of output: non-inverting
Produkt ist nicht verfügbar
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TLE7250VSJXUMA1 TLE7250V.pdf
TLE7250VSJXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: CAN transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; No.of rec: 1
Type of integrated circuit: CAN transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 4.5...5.5V DC
Interface: CAN
Produkt ist nicht verfügbar
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TLE7268SKXUMA1 TLE7268LCXUMA1.pdf
TLE7268SKXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-DSO-14
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-14
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 2
Number of receivers: 2
Supply voltage: 5.5...40V DC
Interface: LIN
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE7251VSJXUMA1 TLE7251V.pdf
TLE7251VSJXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: CAN transceiver; 3÷5.5VDC; PG-DSO-8; -40÷150°C; No.of rec: 1
Type of integrated circuit: CAN transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 3...5.5V DC
Interface: CAN
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE7182EMXUMA1 TLE7182EM.pdf
TLE7182EMXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge,push-pull; MOSFET gate driver; SSOP24; Ch: 4
Type of integrated circuit: driver
Topology: H-bridge; push-pull
Kind of integrated circuit: MOSFET gate driver
Case: SSOP24
Number of channels: 4
Supply voltage: 7...34V DC
Mounting: SMD
Operating temperature: -40...150°C
Turn-on time: 250ns
Turn-off time: 200ns
Produkt ist nicht verfügbar
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TLE7230RAUMA1 Infineon-TLE7230R-DS-v03_04-EN.pdf?fileId=5546d4625a888733015aa2e2c9520f8a
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2A; Ch: 8; N-Channel; SMD; PG-DSO-36
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2A
Number of channels: 8
Kind of output: N-Channel
Mounting: SMD
Case: PG-DSO-36
On-state resistance: 0.8Ω
Operating temperature: -40...150°C
Application: automotive industry
Integrated circuit features: thermal protection
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
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TLE7250SJXUMA1 TLE7250.pdf
TLE7250SJXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: CAN transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; No.of rec: 1
Type of integrated circuit: CAN transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 4.5...5.5V DC
Interface: CAN
Produkt ist nicht verfügbar
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TLE7250XSJXUMA1 TLE7250X.pdf
TLE7250XSJXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: CAN transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; No.of rec: 1
Type of integrated circuit: CAN transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 4.5...5.5V DC
Interface: CAN
Produkt ist nicht verfügbar
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TLE7258DXUMA1 TLE7258D.pdf
TLE7258DXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-TSON-8
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-TSON-8
Operating temperature: -40...150°C
Kind of package: reel; tape
DC supply current: 3mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 5.5...18V DC
Interface: LIN
Produkt ist nicht verfügbar
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TLE7268LCXUMA1 TLE7268LCXUMA1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-TSON-14
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-TSON-14
Operating temperature: -40...150°C
Kind of package: reel; tape
Number of transmitters: 2
Number of receivers: 2
Supply voltage: 5.5...40V DC
Interface: LIN
Produkt ist nicht verfügbar
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TLE75602ESDXUMA1 Infineon-TLE75602-ESD-DataSheet-v01_10-EN.pdf?fileId=5546d4626102d35a0161099b14d97907
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 330mA; Ch: 14; N-Channel; SMD; TSSOP24
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.33A
Number of channels: 14
Kind of output: N-Channel
Mounting: SMD
Case: TSSOP24
On-state resistance: 1Ω
Operating temperature: -40...150°C
Application: automotive industry
Produkt ist nicht verfügbar
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TLE7250GVIOXUMA2 Infineon-TLE7250GVIO-DS-v01_10-EN.pdf?fileId=5546d46259d9a4bf015a3cf633b45e56
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 1Mbps; SOIC8; No.of rec: 1
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: SOIC8
Application: automotive industry
Number of receivers: 1
Interface: CAN; half duplex
Data transfer rate: 1Mbps
auf Bestellung 40000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.63 EUR
Mindestbestellmenge: 2500
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TLE7184FXUMA2 Infineon-TLE7184F-DS-v01_00-en.pdf?folderId=db3a3043156fd5730116144c5d101c30&fileId=db3a30431ed1d7b2011ee035c2f23e81&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; MOSFET; PWM; VQFN48; 350mA; 12.5V
Type of integrated circuit: driver
Topology: H-bridge
Interface: PWM
Case: VQFN48
Output current: 0.35A
Mounting: SMD
Operating temperature: -40...150°C
Technology: MOSFET
DC supply current: 19mA
Application: automotive industry
Integrated circuit features: motor controller
Output voltage: 12.5V
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2000+4.7 EUR
Mindestbestellmenge: 2000
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BSS139IXTSA1 Infineon-BSS139I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a421f99f1d4f
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 250V; 100mA; 360mW; SOT23-3; ESD
Type of transistor: N-MOSFET
Drain-source voltage: 250V
Drain current: 0.1A
Power dissipation: 0.36W
Case: SOT23-3
Gate-source voltage: 20V
On-state resistance: 14Ω
Mounting: SMD
Gate charge: 2.3nC
Application: automotive industry
Version: ESD
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.086 EUR
Mindestbestellmenge: 3000
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IPA037N08N3GXKSA1 IPA037N08N3G-DTE.pdf
IPA037N08N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 75A; 41W; TO220FP
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Kind of package: tube
Case: TO220FP
Polarisation: unipolar
On-state resistance: 3.7mΩ
Gate-source voltage: ±20V
Power dissipation: 41W
Drain current: 75A
Drain-source voltage: 80V
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+3.98 EUR
Mindestbestellmenge: 18
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BSP373NH6327XTSA1 BSP373NH6327-DTE.pdf
BSP373NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
auf Bestellung 1205 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
69+1.04 EUR
109+0.66 EUR
152+0.47 EUR
Mindestbestellmenge: 69
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IPB019N08NF2SATMA1 Infineon-IPB019N08NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f4b169ef1afe
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 166A; 250W; D2PAK,TO263
Mounting: SMD
Case: D2PAK; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 124nC
On-state resistance: 1.95mΩ
Power dissipation: 250W
Drain-source voltage: 80V
Drain current: 166A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CY7C1354C-166AXC download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Mounting: SMD
Supply voltage: 3.135...3.6V DC
Case: TQFP100
Operating temperature: 0...70°C
Kind of package: in-tray
Kind of interface: parallel
Kind of memory: SRAM
Memory: 9Mb SRAM
Frequency: 166MHz
Memory organisation: 256kx36bit
Produkt ist nicht verfügbar
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CY7C1354C-166AXCT download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Mounting: SMD
Supply voltage: 3.135...3.6V DC
Case: TQFP100
Operating temperature: 0...70°C
Kind of package: reel; tape
Kind of interface: parallel
Kind of memory: SRAM
Memory: 9Mb SRAM
Frequency: 166MHz
Memory organisation: 256kx36bit
Produkt ist nicht verfügbar
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CY7C1354C-166AXI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Mounting: SMD
Supply voltage: 3.135...3.6V DC
Case: TQFP100
Operating temperature: -40...85°C
Kind of package: in-tray
Kind of interface: parallel
Kind of memory: SRAM
Memory: 9Mb SRAM
Frequency: 166MHz
Memory organisation: 256kx36bit
Produkt ist nicht verfügbar
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CY7C1354C-166AXIT download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Mounting: SMD
Supply voltage: 3.135...3.6V DC
Case: TQFP100
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Kind of memory: SRAM
Memory: 9Mb SRAM
Frequency: 166MHz
Memory organisation: 256kx36bit
Produkt ist nicht verfügbar
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CY7C1356C-166AXI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Mounting: SMD
Supply voltage: 3.135...3.6V DC
Case: TQFP100
Operating temperature: -40...85°C
Kind of package: in-tray
Kind of interface: parallel
Kind of memory: SRAM
Memory: 9Mb SRAM
Frequency: 166MHz
Memory organisation: 512kx18bit
Produkt ist nicht verfügbar
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CY7C1360C-166AXI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 256kx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Mounting: SMD
Supply voltage: 3.135...3.6V DC
Case: TQFP100
Operating temperature: -40...85°C
Kind of package: in-tray
Kind of interface: parallel
Kind of memory: SRAM
Memory: 9Mb SRAM
Frequency: 166MHz
Memory organisation: 256kx36bit
Produkt ist nicht verfügbar
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IKQ75N120CS6XKSA1 IKQ75N120CS6XKSA1.pdf
IKQ75N120CS6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 440W; PG-TO247-3-46
Mounting: THT
Kind of package: tube
Gate charge: 530nC
Collector current: 75A
Gate-emitter voltage: ±20V
Power dissipation: 440W
Pulsed collector current: 300A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 6
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: PG-TO247-3-46
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.05 EUR
10+7.15 EUR
Mindestbestellmenge: 9
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