Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (119814) > Seite 1976 nach 1997
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FM25V02A-DGQ | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 256kbFRAM; SPI; 32kx8bit; 2÷3.6VDC; 40MHz; DFN8 Mounting: SMD Operating temperature: -40...85°C Kind of interface: serial Interface: SPI Supply voltage: 2...3.6V DC Memory: 256kb FRAM Memory organisation: 32kx8bit Clock frequency: 40MHz Case: DFN8 Kind of memory: FRAM Type of integrated circuit: FRAM memory |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FM25L04B-GTR | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 2.7÷3.6VDC; 1MHz; SO8 Mounting: SMD Operating temperature: -40...85°C Kind of interface: serial Interface: SPI Supply voltage: 2.7...3.6V DC Memory: 4kb FRAM Memory organisation: 512x8bit Clock frequency: 1MHz Case: SO8 Kind of memory: FRAM Type of integrated circuit: FRAM memory |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FM25640B-GTR | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 64kbFRAM; SPI; 8kx8bit; 4.5÷5.5VDC; 20MHz; SO8 Mounting: SMD Operating temperature: -40...85°C Kind of interface: serial Interface: SPI Supply voltage: 4.5...5.5V DC Memory: 64kb FRAM Memory organisation: 8kx8bit Clock frequency: 20MHz Case: SO8 Kind of memory: FRAM Type of integrated circuit: FRAM memory |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FM25V02A-DG | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 256kbFRAM; SPI; 32kx8bit; 2÷3.6VDC; 40MHz; DFN8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 256kb FRAM Interface: SPI Memory organisation: 32kx8bit Supply voltage: 2...3.6V DC Clock frequency: 40MHz Case: DFN8 Mounting: SMD Kind of interface: serial Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FM25V20A-G | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 2MbFRAM; SPI; 256kx8bit; 2÷3.6VDC; 40MHz; DFN8 Mounting: SMD Operating temperature: -40...85°C Kind of interface: serial Interface: SPI Supply voltage: 2...3.6V DC Memory: 2Mb FRAM Memory organisation: 256kx8bit Clock frequency: 40MHz Case: DFN8 Kind of memory: FRAM Type of integrated circuit: FRAM memory |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FM25640B-G | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 64kbFRAM; SPI; 8kx8bit; 4.5÷5.5VDC; 20MHz; SO8 Mounting: SMD Operating temperature: -40...85°C Kind of interface: serial Interface: SPI Supply voltage: 4.5...5.5V DC Memory: 64kb FRAM Memory organisation: 8kx8bit Clock frequency: 20MHz Case: SO8 Kind of memory: FRAM Type of integrated circuit: FRAM memory |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FM25V01A-G | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 128kbFRAM; SPI; 16kx8bit; 2÷3.6VDC; 40MHz; SO8 Mounting: SMD Operating temperature: -40...85°C Kind of interface: serial Interface: SPI Supply voltage: 2...3.6V DC Memory: 128kb FRAM Memory organisation: 16kx8bit Clock frequency: 40MHz Case: SO8 Kind of memory: FRAM Type of integrated circuit: FRAM memory |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FM25V02A-DGTR | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 256kbFRAM; SPI; 32kx8bit; 2÷3.6VDC; 40MHz; DFN8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 256kb FRAM Interface: SPI Memory organisation: 32kx8bit Supply voltage: 2...3.6V DC Clock frequency: 40MHz Case: DFN8 Mounting: SMD Kind of interface: serial Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FM25C160B-GTR | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 4.5÷5.5VDC; 20MHz; SO8 Mounting: SMD Operating temperature: -40...85°C Kind of interface: serial Interface: SPI Supply voltage: 4.5...5.5V DC Memory: 16kb FRAM Memory organisation: 2kx8bit Clock frequency: 20MHz Case: SO8 Kind of memory: FRAM Type of integrated circuit: FRAM memory |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FM25CL64B-DG | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 64kbFRAM; SPI; 8kx8bit; 2.7÷3.65VDC; 20MHz; DFN8 Mounting: SMD Operating temperature: -40...85°C Kind of interface: serial Interface: SPI Supply voltage: 2.7...3.65V DC Memory: 64kb FRAM Memory organisation: 8kx8bit Clock frequency: 20MHz Case: DFN8 Kind of memory: FRAM Type of integrated circuit: FRAM memory |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| FM25CL64B-DGTR | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 64kbFRAM; SPI; 8kx8bit; 2.7÷3.65VDC; 20MHz; DFN8 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Interface: SPI Supply voltage: 2.7...3.65V DC Memory: 64kb FRAM Memory organisation: 8kx8bit Clock frequency: 20MHz Case: DFN8 Kind of memory: FRAM Type of integrated circuit: FRAM memory |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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FM25L04B-DG | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 2.7÷3.6VDC; 20MHz; DFN8 Mounting: SMD Operating temperature: -40...85°C Kind of interface: serial Interface: SPI Supply voltage: 2.7...3.6V DC Memory: 4kb FRAM Memory organisation: 512x8bit Clock frequency: 20MHz Case: DFN8 Kind of memory: FRAM Type of integrated circuit: FRAM memory |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| FM25L04B-DGTR | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 2.7÷3.6VDC; 20MHz; DFN8 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Interface: SPI Supply voltage: 2.7...3.6V DC Memory: 4kb FRAM Memory organisation: 512x8bit Clock frequency: 20MHz Case: DFN8 Kind of memory: FRAM Type of integrated circuit: FRAM memory |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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FM25V02A-DGQTR | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 256kbFRAM; SPI; 32kx8bit; 2÷3.6VDC; 40MHz; DFN8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 256kb FRAM Interface: SPI Memory organisation: 32kx8bit Supply voltage: 2...3.6V DC Clock frequency: 40MHz Case: DFN8 Mounting: SMD Kind of interface: serial Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FM25V05-G | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 512kbFRAM; SPI; 64kx8bit; 2÷3.6VDC; 40MHz; SO8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 512kb FRAM Interface: SPI Memory organisation: 64kx8bit Supply voltage: 2...3.6V DC Clock frequency: 40MHz Case: SO8 Mounting: SMD Operating temperature: -40...85°C Kind of interface: serial |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| FM25V05-GTR | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 512kbFRAM; SPI; 64kx8bit; 2÷3.6VDC; 40MHz; SOIC8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 512kb FRAM Interface: SPI Memory organisation: 64kx8bit Supply voltage: 2...3.6V DC Clock frequency: 40MHz Case: SOIC8 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FM25V10-DG | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; DFN8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 1Mb FRAM Interface: SPI Memory organisation: 128kx8bit Supply voltage: 2...3.6V DC Clock frequency: 40MHz Case: DFN8 Mounting: SMD Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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FM25V10-G | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; SO8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 1Mb FRAM Interface: SPI Memory organisation: 128kx8bit Supply voltage: 2...3.6V DC Clock frequency: 40MHz Case: SO8 Mounting: SMD Kind of interface: serial Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPT015N10NF2SATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 315A; 300W; HSOF-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 315A Power dissipation: 300W Case: HSOF-8 On-state resistance: 1.5mΩ Mounting: SMD Gate charge: 161nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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IRFS7437TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 180A Power dissipation: 230W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Kind of channel: enhancement |
auf Bestellung 406 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFS7734TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 75V; 130A; 290W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 130A Power dissipation: 290W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 180nC Kind of package: reel Kind of channel: enhancement |
auf Bestellung 689 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFS4321TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Drain current: 83A Power dissipation: 330W |
auf Bestellung 210 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFS7730TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 75V; 174A; Idm: 984A; 375W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 174A Pulsed drain current: 984A Power dissipation: 375W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 407nC Kind of package: reel Kind of channel: enhancement |
auf Bestellung 137 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFSL7437PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 180A; Idm: 1kA; 230W; TO262 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 180A Pulsed drain current: 1kA Power dissipation: 230W Case: TO262 Gate-source voltage: ±20V On-state resistance: 1.8mΩ Mounting: THT Gate charge: 225nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 42 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFS4127TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 72A; 375W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Drain current: 72A Power dissipation: 375W |
auf Bestellung 739 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFSL4010PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; TO262 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Case: TO262 Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 375W Technology: HEXFET® |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFS3306TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 110A; Idm: 620A; 230W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 110A Pulsed drain current: 620A Power dissipation: 230W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Kind of channel: enhancement Technology: HEXFET® |
auf Bestellung 374 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFS4010TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 127A; 375W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 127A Power dissipation: 375W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 4.7mΩ Mounting: SMD Gate charge: 143nC Kind of package: reel Kind of channel: enhancement |
auf Bestellung 758 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFS4615TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 33A; 144W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 33A Power dissipation: 144W Case: D2PAK Gate-source voltage: ±20V Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRFS4310TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 140A; 330W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 140A Power dissipation: 330W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRFS52N15DTRRP | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 60A Power dissipation: 320W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRFS4020TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 18A; 100W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 18A Power dissipation: 100W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRFS4229TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 45A; 330W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 250V Drain current: 45A Power dissipation: 330W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRFS3307ZTRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 75V; 120A; 230W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 120A Power dissipation: 230W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRFS3006TRL7PP | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 293A; 375W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 293A Power dissipation: 375W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRFS3107TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 75V; 230A; 370W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 230A Power dissipation: 370W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRFSL3206PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 210A; 300W; TO262 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 210A Power dissipation: 300W Case: TO262 Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRFSL4310ZPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; TO262 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 127A Power dissipation: 250W Case: TO262 Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRFSL7430PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 301A; 375W; TO262 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 301A Power dissipation: 375W Case: TO262 Gate-source voltage: ±20V On-state resistance: 1.2mΩ Mounting: THT Gate charge: 300nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRFS7730TRL7PP | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 75V; 269A; D2PAK-7 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 269A Case: D2PAK-7 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| IRFS3004TRL7PP | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 400A; D2PAK-7 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 400A Case: D2PAK-7 Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| IRFSL4127PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 72A; 375W; TO262 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 72A Power dissipation: 375W Case: TO262 On-state resistance: 22mΩ Mounting: THT Gate charge: 0.1µC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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IRFS23N20DTRLP | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 17A; 170W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 17A Power dissipation: 170W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 57nC Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRFS3004TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 240A; Idm: 1.31kA; 380W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 240A Pulsed drain current: 1.31kA Power dissipation: 380W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 1.75mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| IRFS3006TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 191A; Idm: 1.08kA; 375W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 191A Pulsed drain current: 1.08kA Power dissipation: 375W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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IRFS3107TRL7PP | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 75V; 260A; 370W; D2PAK-7 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 260A Power dissipation: 370W Case: D2PAK-7 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRFS3607TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 80A Power dissipation: 140W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRFS3806TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 31A; Idm: 170A; 71W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 31A Pulsed drain current: 170A Power dissipation: 71W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 15.8mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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IRFS38N20DTRLP | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 44A; 320W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 44A Power dissipation: 320W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IR2156STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; high-side,low-side; SOIC14; 400mA; Ch: 2; 36÷44kHz Type of integrated circuit: driver Kind of integrated circuit: high-side; low-side Case: SOIC14 Output current: 0.4A Number of channels: 2 Mounting: SMD Operating temperature: -25...125°C Application: for controller Frequency: 36...44kHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
|
IRFR4105TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 25A; 48W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 25A Power dissipation: 48W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AUIRFR4105ZTRL | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 30A; 48W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 30A Power dissipation: 48W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
IRF3805PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 220A; 130W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 220A Power dissipation: 130W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: THT Kind of channel: enhancement Kind of package: tube Gate charge: 0.19µC |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF3805STRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 210A; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 210A Case: D2PAK Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
|
IRF3315STRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 21A; 94W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 21A Power dissipation: 94W Case: D2PAK Mounting: SMD Kind of channel: enhancement Kind of package: reel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
IRF3610STRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 73A; 333W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 73A Power dissipation: 333W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 11.6mΩ Mounting: SMD Kind of channel: enhancement Kind of package: reel Gate charge: 0.1µC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IRF3709ZSTRRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 87A; 79W; D2PAK,TO263 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 87A Power dissipation: 79W Case: D2PAK; TO263 On-state resistance: 7.8mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 17nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
|
IRF3805STRL-7PP | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 240A; 300W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 240A Power dissipation: 300W Case: D2PAK Mounting: SMD Kind of channel: enhancement Kind of package: reel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
IPD80R900P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; PG-TO252-3; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.9A Power dissipation: 45W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.9Ω Mounting: SMD Gate charge: 15nC Kind of channel: enhancement Version: ESD |
auf Bestellung 2458 Stücke: Lieferzeit 14-21 Tag (e) |
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IPU80R900P7AKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.9A Power dissipation: 45W Case: IPAK Gate-source voltage: ±20V On-state resistance: 0.9Ω Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhancement Version: ESD |
auf Bestellung 198 Stücke: Lieferzeit 14-21 Tag (e) |
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| FM25V02A-DGQ |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; SPI; 32kx8bit; 2÷3.6VDC; 40MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Interface: SPI
Supply voltage: 2...3.6V DC
Memory: 256kb FRAM
Memory organisation: 32kx8bit
Clock frequency: 40MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; SPI; 32kx8bit; 2÷3.6VDC; 40MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Interface: SPI
Supply voltage: 2...3.6V DC
Memory: 256kb FRAM
Memory organisation: 32kx8bit
Clock frequency: 40MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FM25L04B-GTR |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 2.7÷3.6VDC; 1MHz; SO8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Interface: SPI
Supply voltage: 2.7...3.6V DC
Memory: 4kb FRAM
Memory organisation: 512x8bit
Clock frequency: 1MHz
Case: SO8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 2.7÷3.6VDC; 1MHz; SO8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Interface: SPI
Supply voltage: 2.7...3.6V DC
Memory: 4kb FRAM
Memory organisation: 512x8bit
Clock frequency: 1MHz
Case: SO8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FM25640B-GTR |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; SPI; 8kx8bit; 4.5÷5.5VDC; 20MHz; SO8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Interface: SPI
Supply voltage: 4.5...5.5V DC
Memory: 64kb FRAM
Memory organisation: 8kx8bit
Clock frequency: 20MHz
Case: SO8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; SPI; 8kx8bit; 4.5÷5.5VDC; 20MHz; SO8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Interface: SPI
Supply voltage: 4.5...5.5V DC
Memory: 64kb FRAM
Memory organisation: 8kx8bit
Clock frequency: 20MHz
Case: SO8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FM25V02A-DG |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; SPI; 32kx8bit; 2÷3.6VDC; 40MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: SPI
Memory organisation: 32kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: DFN8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; SPI; 32kx8bit; 2÷3.6VDC; 40MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: SPI
Memory organisation: 32kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: DFN8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FM25V20A-G |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 2MbFRAM; SPI; 256kx8bit; 2÷3.6VDC; 40MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Interface: SPI
Supply voltage: 2...3.6V DC
Memory: 2Mb FRAM
Memory organisation: 256kx8bit
Clock frequency: 40MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 2MbFRAM; SPI; 256kx8bit; 2÷3.6VDC; 40MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Interface: SPI
Supply voltage: 2...3.6V DC
Memory: 2Mb FRAM
Memory organisation: 256kx8bit
Clock frequency: 40MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FM25640B-G |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; SPI; 8kx8bit; 4.5÷5.5VDC; 20MHz; SO8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Interface: SPI
Supply voltage: 4.5...5.5V DC
Memory: 64kb FRAM
Memory organisation: 8kx8bit
Clock frequency: 20MHz
Case: SO8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; SPI; 8kx8bit; 4.5÷5.5VDC; 20MHz; SO8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Interface: SPI
Supply voltage: 4.5...5.5V DC
Memory: 64kb FRAM
Memory organisation: 8kx8bit
Clock frequency: 20MHz
Case: SO8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FM25V01A-G |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 128kbFRAM; SPI; 16kx8bit; 2÷3.6VDC; 40MHz; SO8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Interface: SPI
Supply voltage: 2...3.6V DC
Memory: 128kb FRAM
Memory organisation: 16kx8bit
Clock frequency: 40MHz
Case: SO8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 128kbFRAM; SPI; 16kx8bit; 2÷3.6VDC; 40MHz; SO8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Interface: SPI
Supply voltage: 2...3.6V DC
Memory: 128kb FRAM
Memory organisation: 16kx8bit
Clock frequency: 40MHz
Case: SO8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FM25V02A-DGTR |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; SPI; 32kx8bit; 2÷3.6VDC; 40MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: SPI
Memory organisation: 32kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: DFN8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; SPI; 32kx8bit; 2÷3.6VDC; 40MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: SPI
Memory organisation: 32kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: DFN8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FM25C160B-GTR |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 4.5÷5.5VDC; 20MHz; SO8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Interface: SPI
Supply voltage: 4.5...5.5V DC
Memory: 16kb FRAM
Memory organisation: 2kx8bit
Clock frequency: 20MHz
Case: SO8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 4.5÷5.5VDC; 20MHz; SO8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Interface: SPI
Supply voltage: 4.5...5.5V DC
Memory: 16kb FRAM
Memory organisation: 2kx8bit
Clock frequency: 20MHz
Case: SO8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FM25CL64B-DG |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; SPI; 8kx8bit; 2.7÷3.65VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Interface: SPI
Supply voltage: 2.7...3.65V DC
Memory: 64kb FRAM
Memory organisation: 8kx8bit
Clock frequency: 20MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; SPI; 8kx8bit; 2.7÷3.65VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Interface: SPI
Supply voltage: 2.7...3.65V DC
Memory: 64kb FRAM
Memory organisation: 8kx8bit
Clock frequency: 20MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FM25CL64B-DGTR |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; SPI; 8kx8bit; 2.7÷3.65VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Interface: SPI
Supply voltage: 2.7...3.65V DC
Memory: 64kb FRAM
Memory organisation: 8kx8bit
Clock frequency: 20MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; SPI; 8kx8bit; 2.7÷3.65VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Interface: SPI
Supply voltage: 2.7...3.65V DC
Memory: 64kb FRAM
Memory organisation: 8kx8bit
Clock frequency: 20MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FM25L04B-DG |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 2.7÷3.6VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Interface: SPI
Supply voltage: 2.7...3.6V DC
Memory: 4kb FRAM
Memory organisation: 512x8bit
Clock frequency: 20MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 2.7÷3.6VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Interface: SPI
Supply voltage: 2.7...3.6V DC
Memory: 4kb FRAM
Memory organisation: 512x8bit
Clock frequency: 20MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FM25L04B-DGTR |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 2.7÷3.6VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Interface: SPI
Supply voltage: 2.7...3.6V DC
Memory: 4kb FRAM
Memory organisation: 512x8bit
Clock frequency: 20MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 2.7÷3.6VDC; 20MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Interface: SPI
Supply voltage: 2.7...3.6V DC
Memory: 4kb FRAM
Memory organisation: 512x8bit
Clock frequency: 20MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FM25V02A-DGQTR |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; SPI; 32kx8bit; 2÷3.6VDC; 40MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: SPI
Memory organisation: 32kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: DFN8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; SPI; 32kx8bit; 2÷3.6VDC; 40MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: SPI
Memory organisation: 32kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: DFN8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FM25V05-G |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 512kbFRAM; SPI; 64kx8bit; 2÷3.6VDC; 40MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 512kb FRAM
Interface: SPI
Memory organisation: 64kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 512kbFRAM; SPI; 64kx8bit; 2÷3.6VDC; 40MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 512kb FRAM
Interface: SPI
Memory organisation: 64kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FM25V05-GTR |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 512kbFRAM; SPI; 64kx8bit; 2÷3.6VDC; 40MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 512kb FRAM
Interface: SPI
Memory organisation: 64kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 512kbFRAM; SPI; 64kx8bit; 2÷3.6VDC; 40MHz; SOIC8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 512kb FRAM
Interface: SPI
Memory organisation: 64kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FM25V10-DG |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 1Mb FRAM
Interface: SPI
Memory organisation: 128kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 1Mb FRAM
Interface: SPI
Memory organisation: 128kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FM25V10-G |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 1Mb FRAM
Interface: SPI
Memory organisation: 128kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 1Mb FRAM
Interface: SPI
Memory organisation: 128kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPT015N10NF2SATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 315A; 300W; HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 315A
Power dissipation: 300W
Case: HSOF-8
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 161nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 315A; 300W; HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 315A
Power dissipation: 300W
Case: HSOF-8
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 161nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFS7437TRLPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 230W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 230W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 406 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 35+ | 2.04 EUR |
| 38+ | 1.93 EUR |
| IRFS7734TRLPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 290W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 130A
Power dissipation: 290W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 290W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 130A
Power dissipation: 290W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 180nC
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 689 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 55+ | 1.32 EUR |
| IRFS4321TRLPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Drain current: 83A
Power dissipation: 330W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Drain current: 83A
Power dissipation: 330W
auf Bestellung 210 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 3.9 EUR |
| 26+ | 2.77 EUR |
| 29+ | 2.5 EUR |
| 50+ | 2.2 EUR |
| 100+ | 2 EUR |
| 200+ | 1.82 EUR |
| IRFS7730TRLPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 174A; Idm: 984A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 174A
Pulsed drain current: 984A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 407nC
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 174A; Idm: 984A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 174A
Pulsed drain current: 984A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 407nC
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 137 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 4.06 EUR |
| 21+ | 3.52 EUR |
| 23+ | 3.23 EUR |
| 50+ | 2.87 EUR |
| 100+ | 2.59 EUR |
| IRFSL7437PBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; Idm: 1kA; 230W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Pulsed drain current: 1kA
Power dissipation: 230W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; Idm: 1kA; 230W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Pulsed drain current: 1kA
Power dissipation: 230W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 29+ | 2.53 EUR |
| 39+ | 1.87 EUR |
| 42+ | 1.7 EUR |
| IRFS4127TRLPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 72A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Drain current: 72A
Power dissipation: 375W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 72A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Drain current: 72A
Power dissipation: 375W
auf Bestellung 739 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 3.9 EUR |
| 25+ | 2.86 EUR |
| 29+ | 2.5 EUR |
| 50+ | 2.13 EUR |
| 100+ | 1.89 EUR |
| 200+ | 1.79 EUR |
| IRFSL4010PBF | ![]() |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 375W
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 375W
Technology: HEXFET®
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 7.95 EUR |
| IRFS3306TRLPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; Idm: 620A; 230W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 110A
Pulsed drain current: 620A
Power dissipation: 230W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; Idm: 620A; 230W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 110A
Pulsed drain current: 620A
Power dissipation: 230W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 374 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 3.52 EUR |
| 25+ | 2.92 EUR |
| 31+ | 2.32 EUR |
| 34+ | 2.12 EUR |
| 50+ | 1.89 EUR |
| 100+ | 1.72 EUR |
| 200+ | 1.64 EUR |
| IRFS4010TRLPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 758 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 3.09 EUR |
| IRFS4615TRLPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 33A; 144W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 33A
Power dissipation: 144W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 33A; 144W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 33A
Power dissipation: 144W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFS4310TRLPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFS52N15DTRRP |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 60A
Power dissipation: 320W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 60A
Power dissipation: 320W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFS4020TRLPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 100W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 100W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 100W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 100W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFS4229TRLPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 45A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 45A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 45A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 45A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFS3307ZTRLPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 230W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 230W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 230W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 230W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFS3006TRL7PP |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 293A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 293A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 293A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 293A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFS3107TRLPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 370W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 370W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 370W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 370W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFSL3206PBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; 300W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 210A
Power dissipation: 300W
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; 300W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 210A
Power dissipation: 300W
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFSL4310ZPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 250W
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 250W
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFSL7430PBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 301A; 375W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 301A
Power dissipation: 375W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 301A; 375W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 301A
Power dissipation: 375W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFS7730TRL7PP |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 269A; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 269A
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 269A; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 269A
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFS3004TRL7PP |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 400A; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 400A
Case: D2PAK-7
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 400A; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 400A
Case: D2PAK-7
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFSL4127PBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 72A; 375W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 72A
Power dissipation: 375W
Case: TO262
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 72A; 375W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 72A
Power dissipation: 375W
Case: TO262
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| IRFS23N20DTRLP |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 17A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 17A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 57nC
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 17A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 17A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 57nC
Kind of package: reel
Kind of channel: enhancement
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| IRFS3004TRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 240A; Idm: 1.31kA; 380W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 240A
Pulsed drain current: 1.31kA
Power dissipation: 380W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 1.75mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 240A; Idm: 1.31kA; 380W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 240A
Pulsed drain current: 1.31kA
Power dissipation: 380W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 1.75mΩ
Mounting: SMD
Kind of channel: enhancement
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| IRFS3006TRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 191A; Idm: 1.08kA; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 191A
Pulsed drain current: 1.08kA
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 191A; Idm: 1.08kA; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 191A
Pulsed drain current: 1.08kA
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Kind of channel: enhancement
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| IRFS3107TRL7PP |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 260A; 370W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 260A
Power dissipation: 370W
Case: D2PAK-7
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 260A; 370W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 260A
Power dissipation: 370W
Case: D2PAK-7
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| IRFS3607TRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 140W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 140W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IRFS3806TRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 31A; Idm: 170A; 71W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 31A
Pulsed drain current: 170A
Power dissipation: 71W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 15.8mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 31A; Idm: 170A; 71W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 31A
Pulsed drain current: 170A
Power dissipation: 71W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 15.8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFS38N20DTRLP |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 44A; 320W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 44A
Power dissipation: 320W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 44A; 320W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 44A
Power dissipation: 320W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| IR2156STRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC14; 400mA; Ch: 2; 36÷44kHz
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC14
Output current: 0.4A
Number of channels: 2
Mounting: SMD
Operating temperature: -25...125°C
Application: for controller
Frequency: 36...44kHz
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC14; 400mA; Ch: 2; 36÷44kHz
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC14
Output current: 0.4A
Number of channels: 2
Mounting: SMD
Operating temperature: -25...125°C
Application: for controller
Frequency: 36...44kHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFR4105TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 25A; 48W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 25A
Power dissipation: 48W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 25A; 48W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 25A
Power dissipation: 48W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AUIRFR4105ZTRL |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 30A; 48W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 30A
Power dissipation: 48W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 30A; 48W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 30A
Power dissipation: 48W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF3805PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 220A; 130W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 220A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 0.19µC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 220A; 130W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 220A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 0.19µC
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 22+ | 3.36 EUR |
| 32+ | 2.27 EUR |
| 50+ | 1.83 EUR |
| 100+ | 1.77 EUR |
| IRF3805STRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 210A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 210A
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 210A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 210A
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF3315STRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 94W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 21A
Power dissipation: 94W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 94W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 21A
Power dissipation: 94W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF3610STRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 333W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 73A
Power dissipation: 333W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 11.6mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Gate charge: 0.1µC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 333W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 73A
Power dissipation: 333W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 11.6mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Gate charge: 0.1µC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF3709ZSTRRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 87A; 79W; D2PAK,TO263
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 87A
Power dissipation: 79W
Case: D2PAK; TO263
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 17nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 87A; 79W; D2PAK,TO263
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 87A
Power dissipation: 79W
Case: D2PAK; TO263
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 17nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF3805STRL-7PP |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 240A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 240A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 240A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 240A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPD80R900P7ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhancement
Version: ESD
auf Bestellung 2458 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 42+ | 1.73 EUR |
| 64+ | 1.13 EUR |
| 74+ | 0.97 EUR |
| 89+ | 0.81 EUR |
| 100+ | 0.77 EUR |
| 500+ | 0.71 EUR |
| IPU80R900P7AKMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 198 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 54+ | 1.34 EUR |
| 65+ | 1.11 EUR |
| 79+ | 0.92 EUR |
| 150+ | 0.85 EUR |

















