Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (118569) > Seite 1976 nach 1977

Wählen Sie Seite:   [  << Vorherige Seite ]  1 197 394 591 788 985 1182 1379 1576 1773 1970 1971 1972 1973 1974 1975 1976 1977  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
TT500N14KOFHPSA2 TT500N14KOFHPSA2 INFINEON TECHNOLOGIES TT500N14KOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 500A; BG-PB60AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TT500N16KOFXPSA1 TT500N16KOFXPSA1 INFINEON TECHNOLOGIES TT500N16KOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 500A; BG-PB60AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TT570N16KOFHPSA2 TT570N16KOFHPSA2 INFINEON TECHNOLOGIES TT570N16KOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 570A; BG-PB60AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 570A
Case: BG-PB60AT-1
Max. forward voltage: 1.27V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TZ600N16KOF TZ600N16KOF INFINEON TECHNOLOGIES TZ600N16KOF.pdf Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 600A; BG-PB501-1
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 600A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TZ500N16KOF TZ500N16KOF INFINEON TECHNOLOGIES TZ500N16KOF.pdf Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 500A; BG-PB501-1
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 500A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TZ500N18KOF TZ500N18KOF INFINEON TECHNOLOGIES TZ500N18KOF.pdf Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.8kV; 500A; BG-PB501-1
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.8kV
Load current: 500A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DF400R12KE3HOSA1 DF400R12KE3HOSA1 INFINEON TECHNOLOGIES DF400R12KE3.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Max. off-state voltage: 1.2kV
Topology: buck chopper
Power dissipation: 2kW
Semiconductor structure: diode/transistor
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FZ400R12KS4PHOSA1 INFINEON TECHNOLOGIES Infineon-FZ400R12KS4P-DS-v02_00-EN.pdf?fileId=5546d4625a888733015a8e003d864bc4 Category: IGBT modules
Description: Module: IGBT; 62MM
Type of semiconductor module: IGBT
Case: 62MM
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FZ400R12KE3B1HOSA1 INFINEON TECHNOLOGIES Infineon-FZ400R12KE3_B1-DS-v03_02-en_de.pdf?fileId=db3a304412b407950112b433c1965d75 Category: IGBT modules
Description: Module: IGBT; Ic: 400A; 62MM; 2.25kW
Type of semiconductor module: IGBT
Case: 62MM
Gate-emitter voltage: ±20V
Collector current: 400A
Power dissipation: 2.25kW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FZ400R12KE3HOSA1 INFINEON TECHNOLOGIES Infineon-FZ400R12KE3-DS-v03_02-en_de.pdf?fileId=db3a304412b407950112b433be115d71 Category: IGBT modules
Description: Module: IGBT; Ic: 400A; 62MM; screw; 2.25kW
Type of semiconductor module: IGBT
Case: 62MM
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Power dissipation: 2.25kW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FZ400R12KE4HOSA1 INFINEON TECHNOLOGIES Infineon-FZ400R12KE4-DS-v02_02-en_de.pdf?fileId=db3a30431f848401011fb7c1e8565958 Category: IGBT modules
Description: Module: IGBT; NTC thermistor; 62MM; screw; 2.4kW
Type of semiconductor module: IGBT
Case: 62MM
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Topology: NTC thermistor
Power dissipation: 2.4kW
Technology: Field Stop; Trench
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FZ400R12KP4HOSA1 INFINEON TECHNOLOGIES Infineon-FZ400R12KP4-DS-v02_02-en_de.pdf?fileId=db3a304320896aa20120c8ca11e73293 Category: IGBT modules
Description: Module: IGBT; 62MM; screw; 2.4kW; Field Stop,Trench
Type of semiconductor module: IGBT
Case: 62MM
Electrical mounting: screw
Gate-emitter voltage: ±20V
Power dissipation: 2.4kW
Technology: Field Stop; Trench
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FZ400R12KS4HOSA1 INFINEON TECHNOLOGIES FZ400R12KS4.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 400A; AG-62MM
Type of semiconductor module: IGBT
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Max. off-state voltage: 1.2kV
Power dissipation: 2.5kW
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
F3L400R12PT4B26BOSA1 INFINEON TECHNOLOGIES Infineon-F3L400R12PT4_B26-DS-v02_00-DE.pdf?fileId=db3a30433a747525013a879896ef6412 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC
Type of semiconductor module: IGBT
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Max. off-state voltage: 1.2kV
Topology: 3-level inverter TNPC; NTC thermistor
Power dissipation: 2.15kW
Semiconductor structure: transistor/transistor
Technology: EconoPACK™ 4
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FF400R12KE3HOSA1 INFINEON TECHNOLOGIES FF400R12KE3.pdf Category: IGBT modules
Description: Module: IGBT; Ic: 580A; 62MM
Type of semiconductor module: IGBT
Case: 62MM
Gate-emitter voltage: ±20V
Collector current: 580A
auf Bestellung 91 Stücke:
Lieferzeit 14-21 Tag (e)
10+240.21 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
FF2400R12IP7PBPSA1 INFINEON TECHNOLOGIES FF2400R12IP7P_Rev1.00_6-9-23.pdf Category: IGBT modules
Description: Module: IGBT; Ic: 2.4kA; screw
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 2.4kA
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
2+1013.2 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IRF7455TRPBF IRF7455TRPBF INFINEON TECHNOLOGIES irf7455pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 15A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 15A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS23364DJPBF IRS23364DJPBF INFINEON TECHNOLOGIES irs2336.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Case: PLCC44
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Output current: -0.35...0.2A
Turn-off time: 580ns
Turn-on time: 655ns
Power: 2W
Supply voltage: 11.5...20V DC
Number of channels: 6
Voltage class: 600V
Type of integrated circuit: driver
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS5180-2EKA BTS5180-2EKA INFINEON TECHNOLOGIES BTS5180-2EKA.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 2; N-Channel; SMD; SO14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.5A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO14
On-state resistance: 0.33Ω
Supply voltage: 8...18V DC
Technology: PROFET™+ 12V
auf Bestellung 876 Stücke:
Lieferzeit 14-21 Tag (e)
66+1.09 EUR
72+1 EUR
74+0.97 EUR
Mindestbestellmenge: 66
Im Einkaufswagen  Stück im Wert von  UAH
FP50R06W2E3B11BOMA1 INFINEON TECHNOLOGIES FP50R06W2E3B11.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 50A
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Power dissipation: 175W
Max. off-state voltage: 0.6kV
Type of semiconductor module: IGBT
Case: AG-EASY2B-2
Technology: EasyPIM™ 2B
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSP322PH6327XTSA1 BSP322PH6327XTSA1 INFINEON TECHNOLOGIES BSP322PH6327XTSA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -1A; 1.8W; PG-SOT223
Kind of channel: enhancement
Mounting: SMD
Case: PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -1A
On-state resistance: 0.8Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
auf Bestellung 762 Stücke:
Lieferzeit 14-21 Tag (e)
71+1.02 EUR
118+0.61 EUR
131+0.55 EUR
148+0.48 EUR
250+0.43 EUR
Mindestbestellmenge: 71
Im Einkaufswagen  Stück im Wert von  UAH
DD180N22SHPSA1 INFINEON TECHNOLOGIES DD180N22S.pdf Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 226A; BG-PB34SB-1; screw
Max. forward voltage: 1.39V
Case: BG-PB34SB-1
Mechanical mounting: screw
Load current: 226A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 5.75kA
Electrical mounting: screw
Semiconductor structure: double series
Type of semiconductor module: diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ISO1H811GAUMA1 ISO1H811GAUMA1 INFINEON TECHNOLOGIES ISO1H811G.pdf Category: Interfaces others - integrated circuits
Description: IC: driver; high-side; ISOFACE™; PG-DSO-36; 625mA; Ch: 8; 11÷35VDC
Type of integrated circuit: driver
Kind of integrated circuit: high-side
Technology: ISOFACE™
Case: PG-DSO-36
Output current: 0.625A
Number of channels: 8
Supply voltage: 11...35V DC
Integrated circuit features: 8bit interface; galvanically isolated
Mounting: SMD
On-state resistance: 0.15Ω
Operating temperature: -25...125°C
Kind of package: reel; tape
Kind of output: N-Channel
Turn-on time: 64µs
Turn-off time: 89µs
Power dissipation: 3.3W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY62157EV30LL-45ZSXI CY62157EV30LL-45ZSXI INFINEON TECHNOLOGIES Infineon-CY62157EV30_MoBL_8-Mbit_(512_K_16)_Static_RAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe669131ef&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_4_0 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; TSOP44 II
Case: TSOP44 II
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Access time: 45ns
Operating voltage: 2.2...3.6V
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
auf Bestellung 125 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.47 EUR
10+8.82 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IR2117STRPBF INFINEON TECHNOLOGIES ir2117.pdf?fileId=5546d462533600a4015355c84331168d description Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 200mA; Ch: 1; MOSFET; U: 600V
Operating temperature: -40...125°C
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: high-side; low-side
Integrated circuit features: MOSFET
Case: SOIC8
Output current: 0.2A
Number of channels: 1
Input voltage: 10...20V
Voltage class: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ITS711L1 ITS711L1 INFINEON TECHNOLOGIES ITS711L1.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.7A; Ch: 4; N-Channel; SMD; DSO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.7A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: DSO20
Supply voltage: 5...34V DC
Technology: Industrial PROFET
Output voltage: 2...4V
auf Bestellung 554 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.96 EUR
19+3.78 EUR
25+3.62 EUR
50+3.58 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IRFL024ZTRPBF IRFL024ZTRPBF INFINEON TECHNOLOGIES IRFL024ZTRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5.1A; 2.8W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.1A
Power dissipation: 2.8W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY8C28413-24PVXI CY8C28413-24PVXI INFINEON TECHNOLOGIES CY8C28243-24PVXI.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP28; 1kBSRAM,16kBFLASH
Memory: 1kB SRAM; 16kB FLASH
Interface: GPIO; I2C; SPI; UART
Supply voltage: 3...5.25V DC
Case: SSOP28
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Operating temperature: -40...85°C
Number of inputs/outputs: 24
Clock frequency: 24MHz
Kind of core: 8-bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY8C28433-24PVXI CY8C28433-24PVXI INFINEON TECHNOLOGIES CY8C28243-24PVXI.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP28; 1kBSRAM,16kBFLASH
Memory: 1kB SRAM; 16kB FLASH
Interface: GPIO; I2C; SPI; UART
Supply voltage: 3...5.25V DC
Case: SSOP28
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Operating temperature: -40...85°C
Number of inputs/outputs: 24
Clock frequency: 24MHz
Kind of core: 8-bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY8C27443-24PVXI INFINEON TECHNOLOGIES download description Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SO28; 256BSRAM,16kBFLASH
Memory: 256B SRAM; 16kB FLASH
Interface: GPIO; I2C; SPI; UART
Supply voltage: 3...5.25V DC
Case: SO28
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Integrated circuit features: watchdog
Operating temperature: -40...85°C
Number of inputs/outputs: 24
Clock frequency: 24MHz
Kind of core: 8-bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY8C28403-24PVXI CY8C28403-24PVXI INFINEON TECHNOLOGIES CY8C28243-24PVXI.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP28; 1kBSRAM,16kBFLASH
Memory: 1kB SRAM; 16kB FLASH
Interface: GPIO; I2C; SPI; UART
Supply voltage: 3...5.25V DC
Case: SSOP28
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Operating temperature: -40...85°C
Number of inputs/outputs: 24
Clock frequency: 24MHz
Kind of core: 8-bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY8C28445-24PVXI CY8C28445-24PVXI INFINEON TECHNOLOGIES CY8C28243-24PVXI.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP28; 1kBSRAM,16kBFLASH
Memory: 1kB SRAM; 16kB FLASH
Interface: GPIO; I2C; SPI; UART
Supply voltage: 3...5.25V DC
Case: SSOP28
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Operating temperature: -40...85°C
Number of inputs/outputs: 24
Clock frequency: 24MHz
Kind of core: 8-bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ100N03MSGATMA1 BSZ100N03MSGATMA1 INFINEON TECHNOLOGIES BSZ100N03MSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; 30W; PG-TSDSON-8
Drain-source voltage: 30V
Case: PG-TSDSON-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 10mΩ
Power dissipation: 30W
Drain current: 39A
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BDP 947 H6327 TR INFINEON TECHNOLOGIES Category: Transistors - Unclassified
Description: BDP 947 H6327 TR
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
2000+0.3 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
IR2117SPBF IR2117SPBF INFINEON TECHNOLOGIES ir2117.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 125ns
Turn-off time: 105ns
auf Bestellung 190 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.83 EUR
45+1.6 EUR
50+1.46 EUR
56+1.29 EUR
57+1.26 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
IR2117PBF IR2117PBF INFINEON TECHNOLOGIES ir2117.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 125ns
Turn-off time: 105ns
auf Bestellung 152 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.33 EUR
50+2.16 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
IPP110N20NAAKSA1 IPP110N20NAAKSA1 INFINEON TECHNOLOGIES IPP110N20NA-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUC100N04S6N022ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N04S6N022-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c3edae10df3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 96A; Idm: 400A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 96A
Pulsed drain current: 400A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUC100N04S6N028ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N04S6N028-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c7f0ef50ff8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 77A; Idm: 400A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Pulsed drain current: 400A
Power dissipation: 62W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSS806NEH6327XTSA1 BSS806NEH6327XTSA1 INFINEON TECHNOLOGIES BSS806NEH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Technology: OptiMOS™ 2
Gate-source voltage: ±8V
On-state resistance: 82mΩ
Drain current: 2.3A
Drain-source voltage: 20V
Kind of channel: enhancement
auf Bestellung 3732 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
286+0.25 EUR
403+0.18 EUR
465+0.15 EUR
628+0.11 EUR
1000+0.099 EUR
3000+0.082 EUR
Mindestbestellmenge: 209
Im Einkaufswagen  Stück im Wert von  UAH
BSS806NH6327XTSA1 BSS806NH6327XTSA1 INFINEON TECHNOLOGIES BSS806NH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Technology: OptiMOS™ 2
Gate-source voltage: ±8V
On-state resistance: 82mΩ
Drain current: 2.3A
Drain-source voltage: 20V
Kind of channel: enhancement
auf Bestellung 5413 Stücke:
Lieferzeit 14-21 Tag (e)
157+0.46 EUR
235+0.3 EUR
337+0.21 EUR
395+0.18 EUR
563+0.13 EUR
1000+0.11 EUR
3000+0.089 EUR
Mindestbestellmenge: 157
Im Einkaufswagen  Stück im Wert von  UAH
BC858BE6327 BC858BE6327 INFINEON TECHNOLOGIES BC858CE6327.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 8960 Stücke:
Lieferzeit 14-21 Tag (e)
785+0.092 EUR
1205+0.059 EUR
1360+0.053 EUR
1520+0.047 EUR
3000+0.045 EUR
Mindestbestellmenge: 785
Im Einkaufswagen  Stück im Wert von  UAH
PVD1352NPBF INFINEON TECHNOLOGIES pvd13n.pdf?fileId=5546d462533600a401535683b097292f Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; 1.5Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 550mA
On-state resistance: 1.5Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.39x6.47x4.57mm
Leads: for PCB
Insulation voltage: 4kV
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 841 Stücke:
Lieferzeit 14-21 Tag (e)
50+3.6 EUR
150+3.23 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
BCR108SH6327 BCR108SH6327 INFINEON TECHNOLOGIES BCR108WH6327.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 2.2kΩ
Case: SOT363
Type of transistor: NPN x2
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 170MHz
Polarisation: bipolar
Kind of transistor: BRT
auf Bestellung 1121 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
463+0.15 EUR
532+0.13 EUR
589+0.12 EUR
715+0.1 EUR
725+0.099 EUR
1000+0.089 EUR
Mindestbestellmenge: 358
Im Einkaufswagen  Stück im Wert von  UAH
IPDD60R080G7XTMA1 INFINEON TECHNOLOGIES IPDD60R080G7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 29A; Idm: 83A
Mounting: SMD
Case: PG-HDSOP-10-1
On-state resistance: 80mΩ
Gate-source voltage: ±20V
Drain current: 29A
Pulsed drain current: 83A
Power dissipation: 174W
Drain-source voltage: 600V
Technology: CoolMOS™ G7
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 42nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFU5305PBF IRFU5305PBF INFINEON TECHNOLOGIES irfr5305pbf.pdf description Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; IPAK
Mounting: THT
Case: IPAK
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -28A
Power dissipation: 89W
auf Bestellung 925 Stücke:
Lieferzeit 14-21 Tag (e)
55+1.3 EUR
87+0.83 EUR
106+0.68 EUR
150+0.65 EUR
525+0.62 EUR
Mindestbestellmenge: 55
Im Einkaufswagen  Stück im Wert von  UAH
IGCM10F60GAXKMA1 IGCM10F60GAXKMA1 INFINEON TECHNOLOGIES IGCM10F60GA.pdf Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -10...10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Kind of package: tube
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 26.1W
auf Bestellung 228 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.87 EUR
8+9.12 EUR
10+8.21 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IPP65R225C7XKSA1 IPP65R225C7XKSA1 INFINEON TECHNOLOGIES IPP65R225C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 63W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.225Ω
Drain current: 11A
Gate-source voltage: ±20V
Power dissipation: 63W
Drain-source voltage: 650V
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS6142D BTS6142D INFINEON TECHNOLOGIES BTS6142D.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 7A; Ch: 1; N-Channel; SMD; TO252-5
Kind of integrated circuit: high-side
Mounting: SMD
Technology: High Current PROFET
Kind of output: N-Channel
Type of integrated circuit: power switch
Case: TO252-5
On-state resistance: 10mΩ
Number of channels: 1
Output current: 7A
Supply voltage: 5.5...38V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPD15P10PGBTMA1 SPD15P10PGBTMA1 INFINEON TECHNOLOGIES SPD15P10PGBTMA1-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
On-state resistance: 0.24Ω
Gate-source voltage: ±20V
Power dissipation: 128W
Technology: SIPMOS™
Kind of channel: enhancement
Case: PG-TO252-3
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE4264GHTSA1 INFINEON TECHNOLOGIES TLE4264.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.16A; PG-SOT223-4
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: PG-SOT223-4
Mounting: SMD
Type of integrated circuit: voltage regulator
Operating temperature: -40...150°C
Output current: 0.16A
Voltage drop: 0.25V
Number of channels: 1
Tolerance: ±2%
Output voltage: 5V
Input voltage: 5.5...45V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP011N04NF2SAKMA1 INFINEON TECHNOLOGIES Infineon-IPP011N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c82ce566401831709109e5b3e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 201A; 375W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 201A
Power dissipation: 375W
Case: TO220-3
On-state resistance: 1.15mΩ
Mounting: THT
Gate charge: 0.21µC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDH10G65C6XKSA1 IDH10G65C6XKSA1 INFINEON TECHNOLOGIES IDH10G65C6.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; PG-TO220-2; 72W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.25V
Max. forward impulse current: 44A
Leakage current: 77µA
Power dissipation: 72W
Kind of package: tube
Heatsink thickness: 1.17...1.37mm
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.9 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
IDH10G65C5 IDH10G65C5 INFINEON TECHNOLOGIES Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; PG-TO220-2; Ir: 2uA
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.8V
Max. forward impulse current: 71A
Leakage current: 2µA
Power dissipation: 89W
Kind of package: tube
Heatsink thickness: 1.17...137mm
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS70302EPAXUMA1 BTS70302EPAXUMA1 INFINEON TECHNOLOGIES Infineon-BTS7030-2EPA-DS-v01_00-EN.pdf?fileId=5546d4625ee5d4cd015f105951926c9f Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4.5A; Ch: 2; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
Output current: 4.5A
Case: PG-TSDSO-14
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Number of channels: 2
Kind of integrated circuit: high-side
Kind of output: N-Channel
Technology: PROFET™+2
On-state resistance: 25mΩ
Supply voltage: 4.1...28V DC
auf Bestellung 2965 Stücke:
Lieferzeit 14-21 Tag (e)
42+1.73 EUR
44+1.63 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
BSO220N03MDGXUMA1 BSO220N03MDGXUMA1 INFINEON TECHNOLOGIES BSO220N03MDG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; 1.56W; PG-DSO-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.7A
Power dissipation: 1.56W
Case: PG-DSO-8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 2440 Stücke:
Lieferzeit 14-21 Tag (e)
65+1.1 EUR
80+0.9 EUR
94+0.77 EUR
120+0.6 EUR
143+0.5 EUR
166+0.43 EUR
250+0.4 EUR
Mindestbestellmenge: 65
Im Einkaufswagen  Stück im Wert von  UAH
CY8C4248LQI-BL583 INFINEON TECHNOLOGIES infineon-psoc-4-4200-ble-family-datasheet-programmable-system-on-chip-datasheet-en.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; QFN36; 32kBSRAM,256kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: QFN36
Operating temperature: -40...85°C
Memory: 32kB SRAM; 256kB FLASH
Bluetooth version: 4.2
Clock frequency: 48MHz
Kind of core: 32-bit
Interface: I2C; SPI; UART
Integrated circuit features: watchdog
Supply voltage: 1.9...5.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPP18P06PHXKSA1 SPP18P06PHXKSA1 INFINEON TECHNOLOGIES SPP18P06PHXKSA1-DTE.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18.7A; 81.1W; PG-TO220-3
Case: PG-TO220-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18.7A
On-state resistance: 0.13Ω
Gate-source voltage: ±20V
Power dissipation: 81.1W
Kind of channel: enhancement
auf Bestellung 558 Stücke:
Lieferzeit 14-21 Tag (e)
34+2.16 EUR
44+1.63 EUR
50+1.46 EUR
57+1.26 EUR
64+1.13 EUR
100+1.02 EUR
500+0.83 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
S25FL064LABBHV030 INFINEON TECHNOLOGIES Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating frequency: 108MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S26KS512SDABHV030 INFINEON TECHNOLOGIES CYPR-S-A0005170124-1.pdf?t.download=true&u=5oefqw infineon-512mb-64mb256mb-32mb128mb-16mb1-8v-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 100MHz; 1.7÷1.95V; FBGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: HyperBus
Operating frequency: 100MHz
Operating voltage: 1.7...1.95V
Case: FBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TT500N14KOFHPSA2 TT500N14KOF.pdf
TT500N14KOFHPSA2
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 500A; BG-PB60AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TT500N16KOFXPSA1 TT500N16KOF.pdf
TT500N16KOFXPSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 500A; BG-PB60AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 500A
Case: BG-PB60AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TT570N16KOFHPSA2 TT570N16KOF.pdf
TT570N16KOFHPSA2
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 570A; BG-PB60AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 570A
Case: BG-PB60AT-1
Max. forward voltage: 1.27V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TZ600N16KOF TZ600N16KOF.pdf
TZ600N16KOF
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 600A; BG-PB501-1
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 600A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TZ500N16KOF TZ500N16KOF.pdf
TZ500N16KOF
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 500A; BG-PB501-1
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 500A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TZ500N18KOF TZ500N18KOF.pdf
TZ500N18KOF
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.8kV; 500A; BG-PB501-1
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.8kV
Load current: 500A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DF400R12KE3HOSA1 DF400R12KE3.pdf
DF400R12KE3HOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Max. off-state voltage: 1.2kV
Topology: buck chopper
Power dissipation: 2kW
Semiconductor structure: diode/transistor
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FZ400R12KS4PHOSA1 Infineon-FZ400R12KS4P-DS-v02_00-EN.pdf?fileId=5546d4625a888733015a8e003d864bc4
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; 62MM
Type of semiconductor module: IGBT
Case: 62MM
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FZ400R12KE3B1HOSA1 Infineon-FZ400R12KE3_B1-DS-v03_02-en_de.pdf?fileId=db3a304412b407950112b433c1965d75
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; Ic: 400A; 62MM; 2.25kW
Type of semiconductor module: IGBT
Case: 62MM
Gate-emitter voltage: ±20V
Collector current: 400A
Power dissipation: 2.25kW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FZ400R12KE3HOSA1 Infineon-FZ400R12KE3-DS-v03_02-en_de.pdf?fileId=db3a304412b407950112b433be115d71
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; Ic: 400A; 62MM; screw; 2.25kW
Type of semiconductor module: IGBT
Case: 62MM
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Power dissipation: 2.25kW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FZ400R12KE4HOSA1 Infineon-FZ400R12KE4-DS-v02_02-en_de.pdf?fileId=db3a30431f848401011fb7c1e8565958
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; NTC thermistor; 62MM; screw; 2.4kW
Type of semiconductor module: IGBT
Case: 62MM
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Topology: NTC thermistor
Power dissipation: 2.4kW
Technology: Field Stop; Trench
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FZ400R12KP4HOSA1 Infineon-FZ400R12KP4-DS-v02_02-en_de.pdf?fileId=db3a304320896aa20120c8ca11e73293
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; 62MM; screw; 2.4kW; Field Stop,Trench
Type of semiconductor module: IGBT
Case: 62MM
Electrical mounting: screw
Gate-emitter voltage: ±20V
Power dissipation: 2.4kW
Technology: Field Stop; Trench
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FZ400R12KS4HOSA1 FZ400R12KS4.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 400A; AG-62MM
Type of semiconductor module: IGBT
Case: AG-62MM
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Max. off-state voltage: 1.2kV
Power dissipation: 2.5kW
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
F3L400R12PT4B26BOSA1 Infineon-F3L400R12PT4_B26-DS-v02_00-DE.pdf?fileId=db3a30433a747525013a879896ef6412
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC
Type of semiconductor module: IGBT
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Max. off-state voltage: 1.2kV
Topology: 3-level inverter TNPC; NTC thermistor
Power dissipation: 2.15kW
Semiconductor structure: transistor/transistor
Technology: EconoPACK™ 4
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FF400R12KE3HOSA1 FF400R12KE3.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; Ic: 580A; 62MM
Type of semiconductor module: IGBT
Case: 62MM
Gate-emitter voltage: ±20V
Collector current: 580A
auf Bestellung 91 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+240.21 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
FF2400R12IP7PBPSA1 FF2400R12IP7P_Rev1.00_6-9-23.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; Ic: 2.4kA; screw
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 2.4kA
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+1013.2 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IRF7455TRPBF irf7455pbf.pdf
IRF7455TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 15A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 15A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS23364DJPBF irs2336.pdf
IRS23364DJPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Case: PLCC44
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Output current: -0.35...0.2A
Turn-off time: 580ns
Turn-on time: 655ns
Power: 2W
Supply voltage: 11.5...20V DC
Number of channels: 6
Voltage class: 600V
Type of integrated circuit: driver
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS5180-2EKA BTS5180-2EKA.pdf
BTS5180-2EKA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 2; N-Channel; SMD; SO14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.5A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO14
On-state resistance: 0.33Ω
Supply voltage: 8...18V DC
Technology: PROFET™+ 12V
auf Bestellung 876 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
66+1.09 EUR
72+1 EUR
74+0.97 EUR
Mindestbestellmenge: 66
Im Einkaufswagen  Stück im Wert von  UAH
FP50R06W2E3B11BOMA1 FP50R06W2E3B11.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 50A
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 100A
Power dissipation: 175W
Max. off-state voltage: 0.6kV
Type of semiconductor module: IGBT
Case: AG-EASY2B-2
Technology: EasyPIM™ 2B
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSP322PH6327XTSA1 BSP322PH6327XTSA1-dte.pdf
BSP322PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -1A; 1.8W; PG-SOT223
Kind of channel: enhancement
Mounting: SMD
Case: PG-SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -1A
On-state resistance: 0.8Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
auf Bestellung 762 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
71+1.02 EUR
118+0.61 EUR
131+0.55 EUR
148+0.48 EUR
250+0.43 EUR
Mindestbestellmenge: 71
Im Einkaufswagen  Stück im Wert von  UAH
DD180N22SHPSA1 DD180N22S.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 226A; BG-PB34SB-1; screw
Max. forward voltage: 1.39V
Case: BG-PB34SB-1
Mechanical mounting: screw
Load current: 226A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 5.75kA
Electrical mounting: screw
Semiconductor structure: double series
Type of semiconductor module: diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ISO1H811GAUMA1 ISO1H811G.pdf
ISO1H811GAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: driver; high-side; ISOFACE™; PG-DSO-36; 625mA; Ch: 8; 11÷35VDC
Type of integrated circuit: driver
Kind of integrated circuit: high-side
Technology: ISOFACE™
Case: PG-DSO-36
Output current: 0.625A
Number of channels: 8
Supply voltage: 11...35V DC
Integrated circuit features: 8bit interface; galvanically isolated
Mounting: SMD
On-state resistance: 0.15Ω
Operating temperature: -25...125°C
Kind of package: reel; tape
Kind of output: N-Channel
Turn-on time: 64µs
Turn-off time: 89µs
Power dissipation: 3.3W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY62157EV30LL-45ZSXI Infineon-CY62157EV30_MoBL_8-Mbit_(512_K_16)_Static_RAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe669131ef&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_4_0
CY62157EV30LL-45ZSXI
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; TSOP44 II
Case: TSOP44 II
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Access time: 45ns
Operating voltage: 2.2...3.6V
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
auf Bestellung 125 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.47 EUR
10+8.82 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IR2117STRPBF description ir2117.pdf?fileId=5546d462533600a4015355c84331168d
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 200mA; Ch: 1; MOSFET; U: 600V
Operating temperature: -40...125°C
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: high-side; low-side
Integrated circuit features: MOSFET
Case: SOIC8
Output current: 0.2A
Number of channels: 1
Input voltage: 10...20V
Voltage class: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ITS711L1 ITS711L1.pdf
ITS711L1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.7A; Ch: 4; N-Channel; SMD; DSO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.7A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: DSO20
Supply voltage: 5...34V DC
Technology: Industrial PROFET
Output voltage: 2...4V
auf Bestellung 554 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.96 EUR
19+3.78 EUR
25+3.62 EUR
50+3.58 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IRFL024ZTRPBF IRFL024ZTRPBF.pdf
IRFL024ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5.1A; 2.8W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.1A
Power dissipation: 2.8W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY8C28413-24PVXI CY8C28243-24PVXI.pdf
CY8C28413-24PVXI
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP28; 1kBSRAM,16kBFLASH
Memory: 1kB SRAM; 16kB FLASH
Interface: GPIO; I2C; SPI; UART
Supply voltage: 3...5.25V DC
Case: SSOP28
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Operating temperature: -40...85°C
Number of inputs/outputs: 24
Clock frequency: 24MHz
Kind of core: 8-bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY8C28433-24PVXI CY8C28243-24PVXI.pdf
CY8C28433-24PVXI
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP28; 1kBSRAM,16kBFLASH
Memory: 1kB SRAM; 16kB FLASH
Interface: GPIO; I2C; SPI; UART
Supply voltage: 3...5.25V DC
Case: SSOP28
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Operating temperature: -40...85°C
Number of inputs/outputs: 24
Clock frequency: 24MHz
Kind of core: 8-bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY8C27443-24PVXI description download
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SO28; 256BSRAM,16kBFLASH
Memory: 256B SRAM; 16kB FLASH
Interface: GPIO; I2C; SPI; UART
Supply voltage: 3...5.25V DC
Case: SO28
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Integrated circuit features: watchdog
Operating temperature: -40...85°C
Number of inputs/outputs: 24
Clock frequency: 24MHz
Kind of core: 8-bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY8C28403-24PVXI CY8C28243-24PVXI.pdf
CY8C28403-24PVXI
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP28; 1kBSRAM,16kBFLASH
Memory: 1kB SRAM; 16kB FLASH
Interface: GPIO; I2C; SPI; UART
Supply voltage: 3...5.25V DC
Case: SSOP28
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Operating temperature: -40...85°C
Number of inputs/outputs: 24
Clock frequency: 24MHz
Kind of core: 8-bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY8C28445-24PVXI CY8C28243-24PVXI.pdf
CY8C28445-24PVXI
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP28; 1kBSRAM,16kBFLASH
Memory: 1kB SRAM; 16kB FLASH
Interface: GPIO; I2C; SPI; UART
Supply voltage: 3...5.25V DC
Case: SSOP28
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Operating temperature: -40...85°C
Number of inputs/outputs: 24
Clock frequency: 24MHz
Kind of core: 8-bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ100N03MSGATMA1 BSZ100N03MSG-DTE.pdf
BSZ100N03MSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; 30W; PG-TSDSON-8
Drain-source voltage: 30V
Case: PG-TSDSON-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 10mΩ
Power dissipation: 30W
Drain current: 39A
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BDP 947 H6327 TR
Hersteller: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: BDP 947 H6327 TR
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2000+0.3 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
IR2117SPBF description ir2117.pdf
IR2117SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 125ns
Turn-off time: 105ns
auf Bestellung 190 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.83 EUR
45+1.6 EUR
50+1.46 EUR
56+1.29 EUR
57+1.26 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
IR2117PBF ir2117.pdf
IR2117PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 125ns
Turn-off time: 105ns
auf Bestellung 152 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.33 EUR
50+2.16 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
IPP110N20NAAKSA1 IPP110N20NA-DTE.pdf
IPP110N20NAAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUC100N04S6N022ATMA1 Infineon-IAUC100N04S6N022-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c3edae10df3
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 96A; Idm: 400A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 96A
Pulsed drain current: 400A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUC100N04S6N028ATMA1 Infineon-IAUC100N04S6N028-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c7f0ef50ff8
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 77A; Idm: 400A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Pulsed drain current: 400A
Power dissipation: 62W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSS806NEH6327XTSA1 BSS806NEH6327XTSA1.pdf
BSS806NEH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Technology: OptiMOS™ 2
Gate-source voltage: ±8V
On-state resistance: 82mΩ
Drain current: 2.3A
Drain-source voltage: 20V
Kind of channel: enhancement
auf Bestellung 3732 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
286+0.25 EUR
403+0.18 EUR
465+0.15 EUR
628+0.11 EUR
1000+0.099 EUR
3000+0.082 EUR
Mindestbestellmenge: 209
Im Einkaufswagen  Stück im Wert von  UAH
BSS806NH6327XTSA1 BSS806NH6327XTSA1.pdf
BSS806NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Technology: OptiMOS™ 2
Gate-source voltage: ±8V
On-state resistance: 82mΩ
Drain current: 2.3A
Drain-source voltage: 20V
Kind of channel: enhancement
auf Bestellung 5413 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
235+0.3 EUR
337+0.21 EUR
395+0.18 EUR
563+0.13 EUR
1000+0.11 EUR
3000+0.089 EUR
Mindestbestellmenge: 157
Im Einkaufswagen  Stück im Wert von  UAH
BC858BE6327 BC858CE6327.pdf
BC858BE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 8960 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
785+0.092 EUR
1205+0.059 EUR
1360+0.053 EUR
1520+0.047 EUR
3000+0.045 EUR
Mindestbestellmenge: 785
Im Einkaufswagen  Stück im Wert von  UAH
PVD1352NPBF pvd13n.pdf?fileId=5546d462533600a401535683b097292f
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; 1.5Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 550mA
On-state resistance: 1.5Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.39x6.47x4.57mm
Leads: for PCB
Insulation voltage: 4kV
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 841 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+3.6 EUR
150+3.23 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
BCR108SH6327 BCR108WH6327.pdf
BCR108SH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 2.2kΩ
Case: SOT363
Type of transistor: NPN x2
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 170MHz
Polarisation: bipolar
Kind of transistor: BRT
auf Bestellung 1121 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
463+0.15 EUR
532+0.13 EUR
589+0.12 EUR
715+0.1 EUR
725+0.099 EUR
1000+0.089 EUR
Mindestbestellmenge: 358
Im Einkaufswagen  Stück im Wert von  UAH
IPDD60R080G7XTMA1 IPDD60R080G7.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 29A; Idm: 83A
Mounting: SMD
Case: PG-HDSOP-10-1
On-state resistance: 80mΩ
Gate-source voltage: ±20V
Drain current: 29A
Pulsed drain current: 83A
Power dissipation: 174W
Drain-source voltage: 600V
Technology: CoolMOS™ G7
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 42nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFU5305PBF description irfr5305pbf.pdf
IRFU5305PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; IPAK
Mounting: THT
Case: IPAK
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -28A
Power dissipation: 89W
auf Bestellung 925 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.3 EUR
87+0.83 EUR
106+0.68 EUR
150+0.65 EUR
525+0.62 EUR
Mindestbestellmenge: 55
Im Einkaufswagen  Stück im Wert von  UAH
IGCM10F60GAXKMA1 IGCM10F60GA.pdf
IGCM10F60GAXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -10...10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Kind of package: tube
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 26.1W
auf Bestellung 228 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.87 EUR
8+9.12 EUR
10+8.21 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IPP65R225C7XKSA1 IPP65R225C7-DTE.pdf
IPP65R225C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 63W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.225Ω
Drain current: 11A
Gate-source voltage: ±20V
Power dissipation: 63W
Drain-source voltage: 650V
Technology: CoolMOS™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS6142D BTS6142D.pdf
BTS6142D
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 7A; Ch: 1; N-Channel; SMD; TO252-5
Kind of integrated circuit: high-side
Mounting: SMD
Technology: High Current PROFET
Kind of output: N-Channel
Type of integrated circuit: power switch
Case: TO252-5
On-state resistance: 10mΩ
Number of channels: 1
Output current: 7A
Supply voltage: 5.5...38V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPD15P10PGBTMA1 SPD15P10PGBTMA1-DTE.pdf
SPD15P10PGBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 128W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
On-state resistance: 0.24Ω
Gate-source voltage: ±20V
Power dissipation: 128W
Technology: SIPMOS™
Kind of channel: enhancement
Case: PG-TO252-3
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE4264GHTSA1 TLE4264.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.16A; PG-SOT223-4
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Case: PG-SOT223-4
Mounting: SMD
Type of integrated circuit: voltage regulator
Operating temperature: -40...150°C
Output current: 0.16A
Voltage drop: 0.25V
Number of channels: 1
Tolerance: ±2%
Output voltage: 5V
Input voltage: 5.5...45V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP011N04NF2SAKMA1 Infineon-IPP011N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c82ce566401831709109e5b3e
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 201A; 375W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 201A
Power dissipation: 375W
Case: TO220-3
On-state resistance: 1.15mΩ
Mounting: THT
Gate charge: 0.21µC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDH10G65C6XKSA1 IDH10G65C6.pdf
IDH10G65C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; PG-TO220-2; 72W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.25V
Max. forward impulse current: 44A
Leakage current: 77µA
Power dissipation: 72W
Kind of package: tube
Heatsink thickness: 1.17...1.37mm
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.9 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
IDH10G65C5
IDH10G65C5
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; PG-TO220-2; Ir: 2uA
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.8V
Max. forward impulse current: 71A
Leakage current: 2µA
Power dissipation: 89W
Kind of package: tube
Heatsink thickness: 1.17...137mm
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS70302EPAXUMA1 Infineon-BTS7030-2EPA-DS-v01_00-EN.pdf?fileId=5546d4625ee5d4cd015f105951926c9f
BTS70302EPAXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4.5A; Ch: 2; N-Channel; SMD; reel,tape
Type of integrated circuit: power switch
Output current: 4.5A
Case: PG-TSDSO-14
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Number of channels: 2
Kind of integrated circuit: high-side
Kind of output: N-Channel
Technology: PROFET™+2
On-state resistance: 25mΩ
Supply voltage: 4.1...28V DC
auf Bestellung 2965 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
42+1.73 EUR
44+1.63 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
BSO220N03MDGXUMA1 BSO220N03MDG-DTE.pdf
BSO220N03MDGXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; 1.56W; PG-DSO-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.7A
Power dissipation: 1.56W
Case: PG-DSO-8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 2440 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
65+1.1 EUR
80+0.9 EUR
94+0.77 EUR
120+0.6 EUR
143+0.5 EUR
166+0.43 EUR
250+0.4 EUR
Mindestbestellmenge: 65
Im Einkaufswagen  Stück im Wert von  UAH
CY8C4248LQI-BL583 infineon-psoc-4-4200-ble-family-datasheet-programmable-system-on-chip-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; QFN36; 32kBSRAM,256kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: QFN36
Operating temperature: -40...85°C
Memory: 32kB SRAM; 256kB FLASH
Bluetooth version: 4.2
Clock frequency: 48MHz
Kind of core: 32-bit
Interface: I2C; SPI; UART
Integrated circuit features: watchdog
Supply voltage: 1.9...5.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPP18P06PHXKSA1 SPP18P06PHXKSA1-DTE.pdf
SPP18P06PHXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18.7A; 81.1W; PG-TO220-3
Case: PG-TO220-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18.7A
On-state resistance: 0.13Ω
Gate-source voltage: ±20V
Power dissipation: 81.1W
Kind of channel: enhancement
auf Bestellung 558 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.16 EUR
44+1.63 EUR
50+1.46 EUR
57+1.26 EUR
64+1.13 EUR
100+1.02 EUR
500+0.83 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
S25FL064LABBHV030 Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating frequency: 108MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S26KS512SDABHV030 CYPR-S-A0005170124-1.pdf?t.download=true&u=5oefqw infineon-512mb-64mb256mb-32mb128mb-16mb1-8v-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 100MHz; 1.7÷1.95V; FBGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: HyperBus
Operating frequency: 100MHz
Operating voltage: 1.7...1.95V
Case: FBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 197 394 591 788 985 1182 1379 1576 1773 1970 1971 1972 1973 1974 1975 1976 1977  [ Nächste Seite >> ]