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IRFU13N20DPBF IRFU13N20DPBF INFINEON TECHNOLOGIES irfr13n20dpbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 14A; 110W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 14A
Power dissipation: 110W
Case: IPAK
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR13N20DTRPBF IRFR13N20DTRPBF INFINEON TECHNOLOGIES irfr13n20dpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 14A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 14A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
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CYPD3171-24LQXQT INFINEON TECHNOLOGIES Infineon-EZ-PD(TM)_CCG3PA_Datasheet_USB_Type-C_Port_Controller-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee438366ac0 Category: USB interfaces - integrated circuits
Description: IC: interface; I2C,SPI,UART,USB 3.0; USB controller; 3.3VDC
Interface: I2C; SPI; UART; USB 3.0
Type of integrated circuit: interface
Case: QFN24
Mounting: SMD
Kind of integrated circuit: USB controller
Supply voltage: 3.3V DC
Produkt ist nicht verfügbar
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IPW90R340C3XKSA1 IPW90R340C3XKSA1 INFINEON TECHNOLOGIES Infineon-IPW90R340C3-DS-v01_00-en.pdf?fileId=db3a3043183a955501183c3a02810087 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 15A; 208W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 15A
Power dissipation: 208W
Case: TO247-3
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 94nC
Kind of channel: enhancement
auf Bestellung 12 Stücke:
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12+5.96 EUR
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IPW60R070C6FKSA1 IPW60R070C6FKSA1 INFINEON TECHNOLOGIES IPW60R070C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRG4PSH71KDPBF IRG4PSH71KDPBF INFINEON TECHNOLOGIES irg4psh71kdpbf.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 78A; 350W; SUPER247
Type of transistor: IGBT
Power dissipation: 350W
Case: SUPER247
Mounting: THT
Kind of package: tube
Collector current: 78A
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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IRG4RC10UDPBF IRG4RC10UDPBF INFINEON TECHNOLOGIES irg4rc10udpbf.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 8.5A; 38W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 8.5A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Features of semiconductor devices: integrated anti-parallel diode
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IRG4IBC10UDPBF IRG4IBC10UDPBF INFINEON TECHNOLOGIES irg4ibc10udpbf.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 3.9A; 25W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 3.9A
Power dissipation: 25W
Case: TO220AB
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Produkt ist nicht verfügbar
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IRG4IBC30WPBF IRG4IBC30WPBF INFINEON TECHNOLOGIES irg4ibc30wpbf.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 17A; 45W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 17A
Power dissipation: 45W
Case: TO220AB
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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IRG4PSH71UDPBF IRG4PSH71UDPBF INFINEON TECHNOLOGIES irg4psh71udpbf.pdf description Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 99A; 350W; SUPER247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 99A
Power dissipation: 350W
Case: SUPER247
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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IRG4RC10KDTRPBF IRG4RC10KDTRPBF INFINEON TECHNOLOGIES IRG4RC10KDTRPBF.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 9A; 38W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 9A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: reel
Produkt ist nicht verfügbar
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AUIRG4PC40S-E INFINEON TECHNOLOGIES IRSDS19208-1.pdf?t.download=true&u=5oefqw auirg4pc40s-e.pdf?fileId=5546d462533600a4015355ba2a1c1517 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 160W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 160W
Case: TO247-3
Mounting: THT
Pulsed collector current: 120A
Gate-emitter voltage: ±20V
Gate charge: 150nC
auf Bestellung 39600 Stücke:
Lieferzeit 14-21 Tag (e)
400+7.34 EUR
Mindestbestellmenge: 400
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CY8C4045AZI-S413 CY8C4045AZI-S413 INFINEON TECHNOLOGIES CY8C4024LQI-S411.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP48; 4kBSRAM,32kBFLASH
Mounting: SMD
Operating temperature: -40...85°C
Clock frequency: 48MHz
Integrated circuit features: CapSense
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Type of integrated circuit: PSoC microcontroller
Case: TQFP48
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 36
Memory: 4kB SRAM; 32kB FLASH
Kind of core: 32-bit
Produkt ist nicht verfügbar
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IPP032N06N3GXKSA1 IPP032N06N3GXKSA1 INFINEON TECHNOLOGIES IPP032N06N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 188W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 53 Stücke:
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25+2.95 EUR
48+1.52 EUR
53+1.34 EUR
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IPP052N06L3GXKSA1 IPP052N06L3GXKSA1 INFINEON TECHNOLOGIES IPP052N06L3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 115W; PG-TO220-3
Case: PG-TO220-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 5.2mΩ
Power dissipation: 115W
Drain current: 80A
Gate-source voltage: ±20V
Drain-source voltage: 60V
auf Bestellung 35 Stücke:
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32+2.25 EUR
35+2.04 EUR
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BSZ042N06NSATMA1 BSZ042N06NSATMA1 INFINEON TECHNOLOGIES BSZ042N06NS-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 50W; PG-TSDSON-8
Case: PG-TSDSON-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 4.2mΩ
Power dissipation: 50W
Drain current: 20A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Produkt ist nicht verfügbar
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IPI032N06N3GAKSA1 IPI032N06N3GAKSA1 INFINEON TECHNOLOGIES IPI032N06N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 188W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPF012N06NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPF012N06NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851c67d7463b33 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 60V; 282A; 250W; TO263-7
Case: TO263-7
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate charge: 155nC
On-state resistance: 1.2mΩ
Power dissipation: 250W
Drain current: 282A
Drain-source voltage: 60V
Produkt ist nicht verfügbar
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BF2040E6814HTSA1 BF2040E6814HTSA1 INFINEON TECHNOLOGIES BF2040.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 8V; 40mA; 200mW; SOT143; SMT
Features of semiconductor devices: dual gate
Type of transistor: N-MOSFET
Kind of transistor: RF
Polarisation: unipolar
Drain current: 40mA
Power dissipation: 0.2W
Drain-source voltage: 8V
Gate-source voltage: ±10V
Open-loop gain: 23dB
Frequency: 800MHz
Kind of package: reel; tape
Electrical mounting: SMT
Case: SOT143
Kind of channel: depletion
auf Bestellung 1480 Stücke:
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255+0.28 EUR
370+0.19 EUR
420+0.17 EUR
500+0.16 EUR
Mindestbestellmenge: 255
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TLE9201SGAUMA1 TLE9201SGAUMA1 INFINEON TECHNOLOGIES TLE9201SG.pdf Category: Motor and PWM drivers
Description: IC: driver; H-bridge; IMC,motor controller; SPI; PG-DSO-12-17; 6A
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: IMC; motor controller
Interface: SPI
Case: PG-DSO-12-17
Output current: 6A
Number of channels: 2
Integrated circuit features: current monitoring; fault detection; internal temperature sensor
Mounting: SMD
On-state resistance: 0.1Ω
Operating temperature: -40...150°C
Application: automotive industry
Operating voltage: 5...28V DC
Frequency: 0...20kHz
Kind of package: reel; tape
auf Bestellung 871 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.39 EUR
19+3.82 EUR
21+3.52 EUR
25+3.15 EUR
50+3 EUR
Mindestbestellmenge: 17
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IRFR220NTRPBF IRFR220NTRPBF INFINEON TECHNOLOGIES irfr220npbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 43W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5A
Power dissipation: 43W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 2754 Stücke:
Lieferzeit 14-21 Tag (e)
58+1.24 EUR
73+0.98 EUR
84+0.86 EUR
117+0.61 EUR
135+0.53 EUR
500+0.4 EUR
1000+0.35 EUR
2000+0.34 EUR
Mindestbestellmenge: 58
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IRF2204PBF IRF2204PBF INFINEON TECHNOLOGIES irf2204pbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 210A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 210A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 330W
Technology: HEXFET®
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
2+35.75 EUR
Mindestbestellmenge: 2
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IRL7472L1TRPbF
+2
 		IRL7472L1TRPbF INFINEON TECHNOLOGIES Infineon-IRL7472L1-DS-v02_00-EN.pdf?fileId=5546d46254e133b401555d17178250d8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 68A; DirectFET-L8
Kind of package: reel; tape
Case: DirectFET-L8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 68A
auf Bestellung 637 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.96 EUR
17+4.22 EUR
19+3.82 EUR
21+3.43 EUR
50+3.02 EUR
100+2.79 EUR
250+2.59 EUR
500+2.55 EUR
Mindestbestellmenge: 15
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IRF8714TRPBFXTMA1 IRF8714TRPBFXTMA1 INFINEON TECHNOLOGIES Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain current: 14A
auf Bestellung 1435 Stücke:
Lieferzeit 14-21 Tag (e)
80+0.9 EUR
127+0.57 EUR
196+0.37 EUR
250+0.31 EUR
500+0.28 EUR
1000+0.25 EUR
Mindestbestellmenge: 80
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IPW60R120P7XKSA1 IPW60R120P7XKSA1 INFINEON TECHNOLOGIES infineon-ipw60r120p7-ds-en.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 95W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 95W
Case: TO247-3
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 36nC
Kind of channel: enhancement
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.05 EUR
25+2.9 EUR
30+2.69 EUR
Mindestbestellmenge: 18
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IRFR4104TRPBF IRFR4104TRPBF INFINEON TECHNOLOGIES IRFR4104TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 119A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Drain current: 119A
Power dissipation: 140W
auf Bestellung 1030 Stücke:
Lieferzeit 14-21 Tag (e)
41+1.76 EUR
61+1.17 EUR
72+1 EUR
100+0.92 EUR
Mindestbestellmenge: 41
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IPA80R450P7XKSA1 IPA80R450P7XKSA1 INFINEON TECHNOLOGIES Infineon-IPA80R450P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155d9701ca552be Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 29W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Case: TO220-3
On-state resistance: 0.45Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 24nC
Power dissipation: 29W
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.49 EUR
48+1.5 EUR
55+1.3 EUR
Mindestbestellmenge: 29
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SPW32N50C3FKSA1 SPW32N50C3FKSA1 INFINEON TECHNOLOGIES SPW32N50C3_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d1edf480e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 560V; 32A; 284W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 560V
Drain current: 32A
Case: TO247-3
On-state resistance: 0.11Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 170nC
Power dissipation: 284W
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.77 EUR
10+7.28 EUR
12+6.42 EUR
Mindestbestellmenge: 9
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IPP80R360P7XKSA1 IPP80R360P7XKSA1 INFINEON TECHNOLOGIES IPP80R360P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO220-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Power dissipation: 84W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.5 EUR
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IPA80R360P7XKSA1 IPA80R360P7XKSA1 INFINEON TECHNOLOGIES infineon-ipa80r360p7-datasheet-en.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; Idm: 34A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 34A
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.89 EUR
32+2.27 EUR
37+1.96 EUR
43+1.7 EUR
Mindestbestellmenge: 25
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IPW80R360P7XKSA1 IPW80R360P7XKSA1 INFINEON TECHNOLOGIES IPW80R360P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Power dissipation: 84W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPD80R360P7ATMA1 IPD80R360P7ATMA1 INFINEON TECHNOLOGIES IPD80R360P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Power dissipation: 84W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 30nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPAN80R360P7XKSA1 IPAN80R360P7XKSA1 INFINEON TECHNOLOGIES IPAN80R360P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 30W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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BSD235NH6327XTSA1 BSD235NH6327XTSA1 INFINEON TECHNOLOGIES BSD235NH6327XTSA1.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.95A; 0.5W; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.5W
Case: SOT363
Mounting: SMD
On-state resistance: 0.35Ω
Drain current: 0.95A
Gate-source voltage: ±12V
Technology: OptiMOS™ 2
Drain-source voltage: 20V
Kind of channel: enhancement
auf Bestellung 2983 Stücke:
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358+0.2 EUR
391+0.18 EUR
538+0.13 EUR
610+0.12 EUR
715+0.1 EUR
782+0.092 EUR
1000+0.087 EUR
Mindestbestellmenge: 313
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FM24CL64B-DG FM24CL64B-DG INFINEON TECHNOLOGIES Infineon-FM24CL64B_64-Kbit_(8_K_8)_Serial_(I2C)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdf13330fe&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 2.7÷3.6VDC; 1MHz; DFN8
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Memory: 64kb FRAM
Clock frequency: 1MHz
Memory organisation: 8kx8bit
Interface: I2C
auf Bestellung 934 Stücke:
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11+6.71 EUR
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FM24CL64B-GTR FM24CL64B-GTR INFINEON TECHNOLOGIES FM24CL64B-GTR-DTE.pdf Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 2.7÷3.65VDC; 1MHz; SO8
Interface: I2C
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.65V DC
Memory: 64kb FRAM
Clock frequency: 1MHz
Memory organisation: 8kx8bit
Case: SO8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of interface: serial
Produkt ist nicht verfügbar
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FM24CL64B-DGTR INFINEON TECHNOLOGIES Infineon-FM24CL64B_64-Kbit_(8_K_8)_Serial_(I2C)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdf13330fe&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 2.7÷3.6VDC; 1MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Memory: 64kb FRAM
Clock frequency: 1MHz
Memory organisation: 8kx8bit
Produkt ist nicht verfügbar
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AUIRFB8405 AUIRFB8405 INFINEON TECHNOLOGIES AUIRFB8405.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 163W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 163W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.21 EUR
Mindestbestellmenge: 7
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AUIRFB8409 AUIRFB8409 INFINEON TECHNOLOGIES AUIRFB8409.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 195A; 375W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 195A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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AUIRFR8405TRL INFINEON TECHNOLOGIES INFN-S-A0008053586-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 804A; 163W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 150A
Power dissipation: 163W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.98mΩ
Mounting: SMD
Gate charge: 155nC
Kind of channel: enhancement
Pulsed drain current: 804A
Produkt ist nicht verfügbar
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IKD15N60RC2ATMA1 INFINEON TECHNOLOGIES Infineon-IKD15N60RC2-DataSheet-v02_01-EN.pdf?fileId=5546d4627645f8770176522375194d26 Category: IGBT modules
Description: Transistor: IGBT; Field Stop; 600V; 28A; 115.4W; DPAK
Type of transistor: IGBT
Technology: Field Stop; Trench
Power dissipation: 115.4W
Case: DPAK
Mounting: SMD
Gate charge: 72nC
Collector-emitter voltage: 600V
Collector current: 28A
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Produkt ist nicht verfügbar
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IRF2804STRLPBF IRF2804STRLPBF INFINEON TECHNOLOGIES IRF2804STRLPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 280A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Drain current: 280A
Power dissipation: 330W
auf Bestellung 549 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.43 EUR
32+2.26 EUR
35+2.06 EUR
50+1.82 EUR
100+1.64 EUR
200+1.5 EUR
Mindestbestellmenge: 21
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IRF2804STRL7PP IRF2804STRL7PP INFINEON TECHNOLOGIES irf2804s-7ppbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 320A; 330W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 320A
Power dissipation: 330W
Case: D2PAK-7
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF2804STRRPBF IRF2804STRRPBF INFINEON TECHNOLOGIES IRF2804STRRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 280A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 280A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AUIRF2804L AUIRF2804L INFINEON TECHNOLOGIES irf2804.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 300W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 300W
Case: TO262
Mounting: THT
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 160nC
On-state resistance: 2mΩ
Produkt ist nicht verfügbar
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AUIRF2804STRL AUIRF2804STRL INFINEON TECHNOLOGIES auirf2804.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TLE4241GMXUMA1 TLE4241GMXUMA1 INFINEON TECHNOLOGIES TLE4241GM.pdf Category: LED drivers
Description: IC: driver; current regulator,LED driver; Litix™; PG-DSO-8; 70mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Technology: Litix™
Case: PG-DSO-8
Output current: 70mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 4...45V DC
Produkt ist nicht verfügbar
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FM25V10-GTR FM25V10-GTR INFINEON TECHNOLOGIES Infineon-FM25V10_1-Mbit_(128_K_8)_Serial_(SPI)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe03d63127&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 1Mb FRAM
Interface: SPI
Memory organisation: 128kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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FM24CL16B-DG INFINEON TECHNOLOGIES Infineon-FM24CL16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec99cb241e9 Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: I2C
Supply voltage: 2.7...3.65V DC
Memory: 16kb FRAM
Clock frequency: 1MHz
Memory organisation: 2kx8bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FM24CL16B-DGTR INFINEON TECHNOLOGIES Infineon-FM24CL16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec99cb241e9 Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of package: reel; tape
Supply voltage: 2.7...3.65V DC
Memory: 16kb FRAM
Clock frequency: 1MHz
Memory organisation: 2kx8bit
Produkt ist nicht verfügbar
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BSS131H6327 INFINEON TECHNOLOGIES BSS131.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.1A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSS131H6327XTSA1 BSS131H6327XTSA1 INFINEON TECHNOLOGIES BSS131H6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain current: 0.1A
Power dissipation: 0.36W
On-state resistance: 14Ω
Gate-source voltage: ±20V
Drain-source voltage: 240V
Kind of channel: enhancement
auf Bestellung 73 Stücke:
Lieferzeit 14-21 Tag (e)
73+0.97 EUR
Mindestbestellmenge: 73
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IRL7486MTRPBF INFINEON TECHNOLOGIES IRSD-S-A0001076320-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 209A; DirectFET
Case: DirectFET
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 209A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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IRF7480MTRPBF INFINEON TECHNOLOGIES irf7480m.pdf?fileId=5546d462533600a4015355ff8fa41c30 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 330A
Case: DirectFET
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF6668TRPBF IRF6668TRPBF INFINEON TECHNOLOGIES irf6668pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 55A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 89W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF6727MTRPBF IRF6727MTRPBF INFINEON TECHNOLOGIES irf6727mpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 180A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 180A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 89W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF6613TRPBF IRF6613TRPBF INFINEON TECHNOLOGIES irf6613pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 23A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 23A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 89W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF7759L2TRPBF IRF7759L2TRPBF INFINEON TECHNOLOGIES irf7759l2pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 26A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 26A
Case: DirectFET
Mounting: SMD
Kind of channel: enhancement
Gate charge: 200nC
On-state resistance: 2.3mΩ
Power dissipation: 125W
Technology: HEXFET®
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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IRF6646TRPBF IRF6646TRPBF INFINEON TECHNOLOGIES irf6646pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 12A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 12A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 89W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF6648TRPBF IRF6648TRPBF INFINEON TECHNOLOGIES irf6648pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 86A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 86A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 89W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRFU13N20DPBF irfr13n20dpbf.pdf
IRFU13N20DPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 14A; 110W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 14A
Power dissipation: 110W
Case: IPAK
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR13N20DTRPBF irfr13n20dpbf.pdf
IRFR13N20DTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 14A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 14A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
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CYPD3171-24LQXQT Infineon-EZ-PD(TM)_CCG3PA_Datasheet_USB_Type-C_Port_Controller-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee438366ac0
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: interface; I2C,SPI,UART,USB 3.0; USB controller; 3.3VDC
Interface: I2C; SPI; UART; USB 3.0
Type of integrated circuit: interface
Case: QFN24
Mounting: SMD
Kind of integrated circuit: USB controller
Supply voltage: 3.3V DC
Produkt ist nicht verfügbar
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IPW90R340C3XKSA1 Infineon-IPW90R340C3-DS-v01_00-en.pdf?fileId=db3a3043183a955501183c3a02810087
IPW90R340C3XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 15A; 208W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 15A
Power dissipation: 208W
Case: TO247-3
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 94nC
Kind of channel: enhancement
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+5.96 EUR
Mindestbestellmenge: 12
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IPW60R070C6FKSA1 IPW60R070C6-DTE.pdf
IPW60R070C6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRG4PSH71KDPBF irg4psh71kdpbf.pdf
IRG4PSH71KDPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 78A; 350W; SUPER247
Type of transistor: IGBT
Power dissipation: 350W
Case: SUPER247
Mounting: THT
Kind of package: tube
Collector current: 78A
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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IRG4RC10UDPBF irg4rc10udpbf.pdf
IRG4RC10UDPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 8.5A; 38W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 8.5A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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IRG4IBC10UDPBF irg4ibc10udpbf.pdf
IRG4IBC10UDPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 3.9A; 25W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 3.9A
Power dissipation: 25W
Case: TO220AB
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Produkt ist nicht verfügbar
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IRG4IBC30WPBF irg4ibc30wpbf.pdf
IRG4IBC30WPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 17A; 45W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 17A
Power dissipation: 45W
Case: TO220AB
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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IRG4PSH71UDPBF description irg4psh71udpbf.pdf
IRG4PSH71UDPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 99A; 350W; SUPER247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 99A
Power dissipation: 350W
Case: SUPER247
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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IRG4RC10KDTRPBF IRG4RC10KDTRPBF.pdf
IRG4RC10KDTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 9A; 38W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 9A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: reel
Produkt ist nicht verfügbar
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AUIRG4PC40S-E IRSDS19208-1.pdf?t.download=true&u=5oefqw auirg4pc40s-e.pdf?fileId=5546d462533600a4015355ba2a1c1517
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 160W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 160W
Case: TO247-3
Mounting: THT
Pulsed collector current: 120A
Gate-emitter voltage: ±20V
Gate charge: 150nC
auf Bestellung 39600 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
400+7.34 EUR
Mindestbestellmenge: 400
Im Einkaufswagen  Stück im Wert von  UAH
CY8C4045AZI-S413 CY8C4024LQI-S411.pdf
CY8C4045AZI-S413
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP48; 4kBSRAM,32kBFLASH
Mounting: SMD
Operating temperature: -40...85°C
Clock frequency: 48MHz
Integrated circuit features: CapSense
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Type of integrated circuit: PSoC microcontroller
Case: TQFP48
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 36
Memory: 4kB SRAM; 32kB FLASH
Kind of core: 32-bit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP032N06N3GXKSA1 IPP032N06N3G-DTE.pdf
IPP032N06N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 188W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.95 EUR
48+1.52 EUR
53+1.34 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
IPP052N06L3GXKSA1 IPP052N06L3G-DTE.pdf
IPP052N06L3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 115W; PG-TO220-3
Case: PG-TO220-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 5.2mΩ
Power dissipation: 115W
Drain current: 80A
Gate-source voltage: ±20V
Drain-source voltage: 60V
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.25 EUR
35+2.04 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
BSZ042N06NSATMA1 BSZ042N06NS-DTE.pdf
BSZ042N06NSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 50W; PG-TSDSON-8
Case: PG-TSDSON-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Mounting: SMD
Polarisation: unipolar
On-state resistance: 4.2mΩ
Power dissipation: 50W
Drain current: 20A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPI032N06N3GAKSA1 IPI032N06N3G-DTE.pdf
IPI032N06N3GAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 188W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPF012N06NF2SATMA1 Infineon-IPF012N06NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851c67d7463b33
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 60V; 282A; 250W; TO263-7
Case: TO263-7
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate charge: 155nC
On-state resistance: 1.2mΩ
Power dissipation: 250W
Drain current: 282A
Drain-source voltage: 60V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BF2040E6814HTSA1 BF2040.pdf
BF2040E6814HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 8V; 40mA; 200mW; SOT143; SMT
Features of semiconductor devices: dual gate
Type of transistor: N-MOSFET
Kind of transistor: RF
Polarisation: unipolar
Drain current: 40mA
Power dissipation: 0.2W
Drain-source voltage: 8V
Gate-source voltage: ±10V
Open-loop gain: 23dB
Frequency: 800MHz
Kind of package: reel; tape
Electrical mounting: SMT
Case: SOT143
Kind of channel: depletion
auf Bestellung 1480 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
255+0.28 EUR
370+0.19 EUR
420+0.17 EUR
500+0.16 EUR
Mindestbestellmenge: 255
Im Einkaufswagen  Stück im Wert von  UAH
TLE9201SGAUMA1 TLE9201SG.pdf
TLE9201SGAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; IMC,motor controller; SPI; PG-DSO-12-17; 6A
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: IMC; motor controller
Interface: SPI
Case: PG-DSO-12-17
Output current: 6A
Number of channels: 2
Integrated circuit features: current monitoring; fault detection; internal temperature sensor
Mounting: SMD
On-state resistance: 0.1Ω
Operating temperature: -40...150°C
Application: automotive industry
Operating voltage: 5...28V DC
Frequency: 0...20kHz
Kind of package: reel; tape
auf Bestellung 871 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.39 EUR
19+3.82 EUR
21+3.52 EUR
25+3.15 EUR
50+3 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IRFR220NTRPBF irfr220npbf.pdf
IRFR220NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 43W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5A
Power dissipation: 43W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 2754 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
58+1.24 EUR
73+0.98 EUR
84+0.86 EUR
117+0.61 EUR
135+0.53 EUR
500+0.4 EUR
1000+0.35 EUR
2000+0.34 EUR
Mindestbestellmenge: 58
Im Einkaufswagen  Stück im Wert von  UAH
IRF2204PBF description irf2204pbf.pdf
IRF2204PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 210A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 210A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 330W
Technology: HEXFET®
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+35.75 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IRL7472L1TRPbF Infineon-IRL7472L1-DS-v02_00-EN.pdf?fileId=5546d46254e133b401555d17178250d8
IRL7472L1TRPbF
+2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 68A; DirectFET-L8
Kind of package: reel; tape
Case: DirectFET-L8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 68A
auf Bestellung 637 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.96 EUR
17+4.22 EUR
19+3.82 EUR
21+3.43 EUR
50+3.02 EUR
100+2.79 EUR
250+2.59 EUR
500+2.55 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IRF8714TRPBFXTMA1
IRF8714TRPBFXTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain current: 14A
auf Bestellung 1435 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
80+0.9 EUR
127+0.57 EUR
196+0.37 EUR
250+0.31 EUR
500+0.28 EUR
1000+0.25 EUR
Mindestbestellmenge: 80
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R120P7XKSA1 infineon-ipw60r120p7-ds-en.pdf
IPW60R120P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 95W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 95W
Case: TO247-3
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 36nC
Kind of channel: enhancement
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.05 EUR
25+2.9 EUR
30+2.69 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
IRFR4104TRPBF IRFR4104TRPBF.pdf
IRFR4104TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 119A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Drain current: 119A
Power dissipation: 140W
auf Bestellung 1030 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.76 EUR
61+1.17 EUR
72+1 EUR
100+0.92 EUR
Mindestbestellmenge: 41
Im Einkaufswagen  Stück im Wert von  UAH
IPA80R450P7XKSA1 Infineon-IPA80R450P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155d9701ca552be
IPA80R450P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 29W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Case: TO220-3
On-state resistance: 0.45Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 24nC
Power dissipation: 29W
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.49 EUR
48+1.5 EUR
55+1.3 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
SPW32N50C3FKSA1 SPW32N50C3_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d1edf480e
SPW32N50C3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 560V; 32A; 284W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 560V
Drain current: 32A
Case: TO247-3
On-state resistance: 0.11Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 170nC
Power dissipation: 284W
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.77 EUR
10+7.28 EUR
12+6.42 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IPP80R360P7XKSA1 IPP80R360P7.pdf
IPP80R360P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO220-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Power dissipation: 84W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPA80R360P7XKSA1 infineon-ipa80r360p7-datasheet-en.pdf
IPA80R360P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; Idm: 34A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 34A
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.89 EUR
32+2.27 EUR
37+1.96 EUR
43+1.7 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
IPW80R360P7XKSA1 IPW80R360P7.pdf
IPW80R360P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Power dissipation: 84W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD80R360P7ATMA1 IPD80R360P7.pdf
IPD80R360P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 84W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Power dissipation: 84W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 30nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPAN80R360P7XKSA1 IPAN80R360P7.pdf
IPAN80R360P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; 30W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.6A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSD235NH6327XTSA1 BSD235NH6327XTSA1.pdf
BSD235NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.95A; 0.5W; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.5W
Case: SOT363
Mounting: SMD
On-state resistance: 0.35Ω
Drain current: 0.95A
Gate-source voltage: ±12V
Technology: OptiMOS™ 2
Drain-source voltage: 20V
Kind of channel: enhancement
auf Bestellung 2983 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
358+0.2 EUR
391+0.18 EUR
538+0.13 EUR
610+0.12 EUR
715+0.1 EUR
782+0.092 EUR
1000+0.087 EUR
Mindestbestellmenge: 313
Im Einkaufswagen  Stück im Wert von  UAH
FM24CL64B-DG Infineon-FM24CL64B_64-Kbit_(8_K_8)_Serial_(I2C)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdf13330fe&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM24CL64B-DG
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 2.7÷3.6VDC; 1MHz; DFN8
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Memory: 64kb FRAM
Clock frequency: 1MHz
Memory organisation: 8kx8bit
Interface: I2C
auf Bestellung 934 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.71 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
FM24CL64B-GTR FM24CL64B-GTR-DTE.pdf
FM24CL64B-GTR
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 2.7÷3.65VDC; 1MHz; SO8
Interface: I2C
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.65V DC
Memory: 64kb FRAM
Clock frequency: 1MHz
Memory organisation: 8kx8bit
Case: SO8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of interface: serial
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FM24CL64B-DGTR Infineon-FM24CL64B_64-Kbit_(8_K_8)_Serial_(I2C)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdf13330fe&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 64kbFRAM; I2C; 8kx8bit; 2.7÷3.6VDC; 1MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Memory: 64kb FRAM
Clock frequency: 1MHz
Memory organisation: 8kx8bit
Produkt ist nicht verfügbar
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AUIRFB8405 AUIRFB8405.pdf
AUIRFB8405
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 163W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 163W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.21 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
AUIRFB8409 AUIRFB8409.pdf
AUIRFB8409
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 195A; 375W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 195A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRFR8405TRL INFN-S-A0008053586-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 804A; 163W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 150A
Power dissipation: 163W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.98mΩ
Mounting: SMD
Gate charge: 155nC
Kind of channel: enhancement
Pulsed drain current: 804A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKD15N60RC2ATMA1 Infineon-IKD15N60RC2-DataSheet-v02_01-EN.pdf?fileId=5546d4627645f8770176522375194d26
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Transistor: IGBT; Field Stop; 600V; 28A; 115.4W; DPAK
Type of transistor: IGBT
Technology: Field Stop; Trench
Power dissipation: 115.4W
Case: DPAK
Mounting: SMD
Gate charge: 72nC
Collector-emitter voltage: 600V
Collector current: 28A
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Produkt ist nicht verfügbar
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IRF2804STRLPBF IRF2804STRLPBF.pdf
IRF2804STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 280A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Drain current: 280A
Power dissipation: 330W
auf Bestellung 549 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.43 EUR
32+2.26 EUR
35+2.06 EUR
50+1.82 EUR
100+1.64 EUR
200+1.5 EUR
Mindestbestellmenge: 21
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IRF2804STRL7PP irf2804s-7ppbf.pdf
IRF2804STRL7PP
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 320A; 330W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 320A
Power dissipation: 330W
Case: D2PAK-7
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF2804STRRPBF IRF2804STRRPBF.pdf
IRF2804STRRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 280A; 330W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 280A
Power dissipation: 330W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AUIRF2804L irf2804.pdf
AUIRF2804L
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 300W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 300W
Case: TO262
Mounting: THT
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 160nC
On-state resistance: 2mΩ
Produkt ist nicht verfügbar
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AUIRF2804STRL auirf2804.pdf
AUIRF2804STRL
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TLE4241GMXUMA1 TLE4241GM.pdf
TLE4241GMXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; current regulator,LED driver; Litix™; PG-DSO-8; 70mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Technology: Litix™
Case: PG-DSO-8
Output current: 70mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 4...45V DC
Produkt ist nicht verfügbar
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FM25V10-GTR Infineon-FM25V10_1-Mbit_(128_K_8)_Serial_(SPI)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe03d63127&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM25V10-GTR
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 1Mb FRAM
Interface: SPI
Memory organisation: 128kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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FM24CL16B-DG Infineon-FM24CL16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec99cb241e9
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: I2C
Supply voltage: 2.7...3.65V DC
Memory: 16kb FRAM
Clock frequency: 1MHz
Memory organisation: 2kx8bit
Produkt ist nicht verfügbar
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FM24CL16B-DGTR Infineon-FM24CL16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec99cb241e9
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of package: reel; tape
Supply voltage: 2.7...3.65V DC
Memory: 16kb FRAM
Clock frequency: 1MHz
Memory organisation: 2kx8bit
Produkt ist nicht verfügbar
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BSS131H6327 BSS131.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.1A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 14Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSS131H6327XTSA1 BSS131H6327XTSA1.pdf
BSS131H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain current: 0.1A
Power dissipation: 0.36W
On-state resistance: 14Ω
Gate-source voltage: ±20V
Drain-source voltage: 240V
Kind of channel: enhancement
auf Bestellung 73 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
73+0.97 EUR
Mindestbestellmenge: 73
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IRL7486MTRPBF IRSD-S-A0001076320-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 209A; DirectFET
Case: DirectFET
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 209A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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IRF7480MTRPBF irf7480m.pdf?fileId=5546d462533600a4015355ff8fa41c30
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 330A
Case: DirectFET
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF6668TRPBF irf6668pbf.pdf
IRF6668TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 55A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 89W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF6727MTRPBF irf6727mpbf.pdf
IRF6727MTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 180A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 180A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 89W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF6613TRPBF irf6613pbf.pdf
IRF6613TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 23A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 23A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 89W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF7759L2TRPBF irf7759l2pbf.pdf
IRF7759L2TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 26A; 125W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 26A
Case: DirectFET
Mounting: SMD
Kind of channel: enhancement
Gate charge: 200nC
On-state resistance: 2.3mΩ
Power dissipation: 125W
Technology: HEXFET®
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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IRF6646TRPBF irf6646pbf.pdf
IRF6646TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 12A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 12A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 89W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF6648TRPBF irf6648pbf.pdf
IRF6648TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 86A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 86A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 89W
Technology: HEXFET®
Produkt ist nicht verfügbar
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