Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (118688) > Seite 1979 nach 1979
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| CY15B128Q-SXET | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuits Description: IC: FRAM memory; 128kbFRAM; SPI; 16kx8bit; 2.7÷3.6VDC; 33MHz; SOIC8 Type of integrated circuit: FRAM memory Case: SOIC8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Supply voltage: 2.7...3.6V DC Memory: 128kb FRAM Clock frequency: 33MHz Memory organisation: 16kx8bit Kind of memory: FRAM Interface: SPI |
Produkt ist nicht verfügbar |
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FM18W08-SG | INFINEON TECHNOLOGIES |
 Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 256kbFRAM; parallel 8bit; 32kx8bit; 2.7÷5.5VDC Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 256kb FRAM Interface: parallel 8bit Memory organisation: 32kx8bit Supply voltage: 2.7...5.5V DC Access time: 70ns Case: SO28 Mounting: SMD Kind of interface: parallel Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
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IPP023N08N5AKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 120A Power dissipation: 375W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 2.3mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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BCX42E6327 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 125V; 0.8A; 0.33W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 125V Collector current: 0.8A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 150MHz |
auf Bestellung 1178 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFS4310ZTRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 127A Power dissipation: 250W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| IAUC100N08S5N031ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 167W Case: PG-TDSON-8 Polarisation: unipolar On-state resistance: 3.1mΩ Type of transistor: N-MOSFET Gate-source voltage: ±20V Drain current: 100A Drain-source voltage: 80V Power dissipation: 167W Pulsed drain current: 400A Kind of channel: enhancement Technology: OptiMOS™ 5 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| IAUC100N08S5N034ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 400A; 136W Case: PG-TDSON-8 Polarisation: unipolar Gate charge: 66nC On-state resistance: 4.8mΩ Type of transistor: N-MOSFET Gate-source voltage: ±20V Drain current: 22A Drain-source voltage: 80V Power dissipation: 136W Pulsed drain current: 400A Kind of channel: enhancement Technology: OptiMOS™ 5 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| IAUC100N08S5N043ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 76A; Idm: 400A; 120W Case: PG-TDSON-8 Polarisation: unipolar On-state resistance: 4.3mΩ Type of transistor: N-MOSFET Gate-source voltage: ±20V Drain current: 76A Drain-source voltage: 80V Power dissipation: 120W Pulsed drain current: 400A Kind of channel: enhancement Technology: OptiMOS™ 5 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| CY15B128Q-SXET |
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 128kbFRAM; SPI; 16kx8bit; 2.7÷3.6VDC; 33MHz; SOIC8
Type of integrated circuit: FRAM memory
Case: SOIC8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Supply voltage: 2.7...3.6V DC
Memory: 128kb FRAM
Clock frequency: 33MHz
Memory organisation: 16kx8bit
Kind of memory: FRAM
Interface: SPI
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 128kbFRAM; SPI; 16kx8bit; 2.7÷3.6VDC; 33MHz; SOIC8
Type of integrated circuit: FRAM memory
Case: SOIC8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Supply voltage: 2.7...3.6V DC
Memory: 128kb FRAM
Clock frequency: 33MHz
Memory organisation: 16kx8bit
Kind of memory: FRAM
Interface: SPI
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FM18W08-SG |
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Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; parallel 8bit; 32kx8bit; 2.7÷5.5VDC
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: parallel 8bit
Memory organisation: 32kx8bit
Supply voltage: 2.7...5.5V DC
Access time: 70ns
Case: SO28
Mounting: SMD
Kind of interface: parallel
Operating temperature: -40...85°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; parallel 8bit; 32kx8bit; 2.7÷5.5VDC
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: parallel 8bit
Memory organisation: 32kx8bit
Supply voltage: 2.7...5.5V DC
Access time: 70ns
Case: SO28
Mounting: SMD
Kind of interface: parallel
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPP023N08N5AKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BCX42E6327 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 125V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 125V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 125V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 125V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
auf Bestellung 1178 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 290+ | 0.25 EUR |
| 468+ | 0.15 EUR |
| 562+ | 0.13 EUR |
| 650+ | 0.11 EUR |
| 1000+ | 0.1 EUR |
| IRFS4310ZTRLPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IAUC100N08S5N031ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 167W
Case: PG-TDSON-8
Polarisation: unipolar
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Drain current: 100A
Drain-source voltage: 80V
Power dissipation: 167W
Pulsed drain current: 400A
Kind of channel: enhancement
Technology: OptiMOS™ 5
Mounting: SMD
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 167W
Case: PG-TDSON-8
Polarisation: unipolar
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Drain current: 100A
Drain-source voltage: 80V
Power dissipation: 167W
Pulsed drain current: 400A
Kind of channel: enhancement
Technology: OptiMOS™ 5
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IAUC100N08S5N034ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 400A; 136W
Case: PG-TDSON-8
Polarisation: unipolar
Gate charge: 66nC
On-state resistance: 4.8mΩ
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Drain current: 22A
Drain-source voltage: 80V
Power dissipation: 136W
Pulsed drain current: 400A
Kind of channel: enhancement
Technology: OptiMOS™ 5
Mounting: SMD
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 400A; 136W
Case: PG-TDSON-8
Polarisation: unipolar
Gate charge: 66nC
On-state resistance: 4.8mΩ
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Drain current: 22A
Drain-source voltage: 80V
Power dissipation: 136W
Pulsed drain current: 400A
Kind of channel: enhancement
Technology: OptiMOS™ 5
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IAUC100N08S5N043ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 76A; Idm: 400A; 120W
Case: PG-TDSON-8
Polarisation: unipolar
On-state resistance: 4.3mΩ
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Drain current: 76A
Drain-source voltage: 80V
Power dissipation: 120W
Pulsed drain current: 400A
Kind of channel: enhancement
Technology: OptiMOS™ 5
Mounting: SMD
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 76A; Idm: 400A; 120W
Case: PG-TDSON-8
Polarisation: unipolar
On-state resistance: 4.3mΩ
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Drain current: 76A
Drain-source voltage: 80V
Power dissipation: 120W
Pulsed drain current: 400A
Kind of channel: enhancement
Technology: OptiMOS™ 5
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH