Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (118571) > Seite 1957 nach 1977

Wählen Sie Seite:   [  << Vorherige Seite ]  1 197 394 591 788 985 1182 1379 1576 1773 1952 1953 1954 1955 1956 1957 1958 1959 1960 1961 1962 1970 1977  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
S70KL1282GABHV020 INFINEON TECHNOLOGIES Infineon-S70KL1282_S70KS1282_3.0_V_1.8_V_128_Mb_(16_MB)_HYPERBUS_INTERFACE_HYPERRAM_(SELF-REFRESH_DRAM)-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9315b7210 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S70KL1283GABHV020 INFINEON TECHNOLOGIES Infineon-S70KL1283_S70KS1283_Octal_xSPI_Interface_HyperRam_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee91dc171f9 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S70KS1282GABHV020 INFINEON TECHNOLOGIES Infineon-S70KL1282_S70KS1282_3.0_V_1.8_V_128_Mb_(16_MB)_HYPERBUS_INTERFACE_HYPERRAM_(SELF-REFRESH_DRAM)-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9315b7210 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S70KS1282GABHV023 INFINEON TECHNOLOGIES Infineon-S70KL1282_S70KS1282_3.0_V_1.8_V_128_Mb_(16_MB)_HYPERBUS_INTERFACE_HYPERRAM_(SELF-REFRESH_DRAM)-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9315b7210 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S80KS5122GABHV023 INFINEON TECHNOLOGIES S80KS5122.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKD04N60RC2ATMA1 INFINEON TECHNOLOGIES Infineon-IKD04N60RC2-DataSheet-v02_01-EN.pdf?fileId=5546d4627645f8770176522334a44d1d Category: IGBT modules
Description: Transistor: IGBT; Field Stop; 600V; 8A; 36.6W; DPAK
Type of transistor: IGBT
Technology: Field Stop; Trench
Collector-emitter voltage: 600V
Collector current: 8A
Power dissipation: 36.6W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 12A
Mounting: SMD
Gate charge: 24nC
Turn-off time: 90ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLL014NTRPBF IRLL014NTRPBF INFINEON TECHNOLOGIES irll014npbf.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 2A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 2A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
auf Bestellung 8081 Stücke:
Lieferzeit 14-21 Tag (e)
109+0.66 EUR
144+0.5 EUR
172+0.42 EUR
219+0.33 EUR
250+0.29 EUR
500+0.27 EUR
1000+0.25 EUR
2500+0.23 EUR
5000+0.21 EUR
Mindestbestellmenge: 109
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4615PBF IRFB4615PBF INFINEON TECHNOLOGIES irfb4615pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 35A; 144W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 144W
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: tube
Gate charge: 26nC
On-state resistance: 39mΩ
Drain current: 35A
Gate-source voltage: ±20V
Drain-source voltage: 150V
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)
65+1.12 EUR
70+1.03 EUR
75+0.96 EUR
Mindestbestellmenge: 65
Im Einkaufswagen  Stück im Wert von  UAH
BSC093N15NS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSC093N15NS5-DS-v02_00-EN.pdf?fileId=5546d462503812bb01507033a3fa1175 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 87A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 139W
Case: PG-TDSON-8
Mounting: SMD
Kind of channel: enhancement
Gate charge: 33nC
On-state resistance: 9.3mΩ
Drain current: 87A
Drain-source voltage: 150V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XMC4700 RELAX KIT XMC4700 RELAX KIT INFINEON TECHNOLOGIES xmc4700_4800.pdf Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC4700; Comp: XMC4700-F144
Type of development kit: ARM Infineon
Family: XMC4700
Kit contents: development board with XMCmicrocontroller
Components: XMC4700-F144
Interface: CAN x6; EBI; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USIC x2
Connection: pin strips; RJ45; USB B micro x2
Application: building automation; CAV; motors; photovoltaics
Number of add-on connectors: 1
Kind of architecture: Cortex M4
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XMC4800 RELAX ETHERCAT KIT XMC4800 RELAX ETHERCAT KIT INFINEON TECHNOLOGIES xmc4700_4800.pdf Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC4800; Comp: XMC4800-F144
Type of development kit: ARM Infineon
Family: XMC4800
Kit contents: development board with XMCmicrocontroller; expansion board
Components: XMC4800-F144
Interface: CAN x6; EBI; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USIC x2
Connection: pin strips; RJ45; USB 2.0 x2; USB B micro x2
Application: building automation; CAV; EtherCAT; motors; photovoltaics
Number of add-on connectors: 2
Kind of architecture: Cortex M4
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC009NE2LS5ATMA1 INFINEON TECHNOLOGIES BSC009NE2LS5-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC009NE2LS5IATMA1 BSC009NE2LS5IATMA1 INFINEON TECHNOLOGIES BSC009NE2LS5I-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIPS7125RTRL INFINEON TECHNOLOGIES auips7125.pdf?fileId=5546d462533600a4015355a7d96a132a Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.8A; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3.8A
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 24mΩ
Active logical level: high
Operating temperature: -40...150°C
Integrated circuit features: thermal protection
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+6.66 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
AUIPS7091GTR AUIPS7091GTR INFINEON TECHNOLOGIES auips7091.pdf?fileId=5546d462533600a4015355a7c0d21322 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 8A; Ch: 1; N-Channel; SMD; SO8; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.12Ω
Kind of package: reel
Technology: Classic PROFET
Operating temperature: -40...150°C
Power dissipation: 1.25W
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIPS7111STRL INFINEON TECHNOLOGIES auips7111s.pdf?fileId=5546d462533600a4015355a7c94e1326 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10A; Ch: 1; N-Channel; SMD; D2PAK-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 10A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: D2PAK-5
On-state resistance: 7.5mΩ
Kind of package: reel
Technology: Classic PROFET
Operating temperature: -40...150°C
Power dissipation: 2.5W
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIPS71451GTR AUIPS71451GTR INFINEON TECHNOLOGIES auips71451g.pdf?fileId=5546d462533600a4015355a7f7461332 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 1; N-Channel; SMD; SO8; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.1Ω
Kind of package: reel
Technology: Classic PROFET
Operating temperature: -40...150°C
Power dissipation: 1.25W
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGS12P2L6E6327XTSA1 INFINEON TECHNOLOGIES Infineon-BGS12P2L6-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016d4487d53603ce Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; TSLP-6-4; 1.65÷3.4VDC; 0.05÷6GHz
Type of integrated circuit: RF switch
Output configuration: SPDT
Case: TSLP-6-4
Supply voltage: 1.65...3.4V DC
Mounting: SMD
Bandwidth: 0.05...6GHz
Application: telecommunication
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGSA12GN10E6327XTSA1 INFINEON TECHNOLOGIES Infineon_AntennaTuningSolutions_2014-06.pdf?fileId=5546d461464245d301468a636c8c6598 Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; TSNP10
Mounting: SMD
Type of integrated circuit: RF switch
Case: TSNP10
Output configuration: SPDT
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)
7500+0.45 EUR
Mindestbestellmenge: 7500
Im Einkaufswagen  Stück im Wert von  UAH
IPT015N10N5ATMA1 IPT015N10N5ATMA1 INFINEON TECHNOLOGIES IPT015N10N5-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 243A; Idm: 1200A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 243A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 169nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPT020N10N5ATMA1 INFINEON TECHNOLOGIES infineon-ipt020n10n5-datasheet-en.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR2705TRPBF IRLR2705TRPBF INFINEON TECHNOLOGIES irlr2705pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 28A; 68W; DPAK
Mounting: SMD
Case: DPAK
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Kind of package: reel
Polarisation: unipolar
Power dissipation: 68W
Drain current: 28A
Drain-source voltage: 55V
auf Bestellung 6074 Stücke:
Lieferzeit 14-21 Tag (e)
65+1.12 EUR
87+0.82 EUR
126+0.57 EUR
148+0.48 EUR
500+0.35 EUR
1000+0.31 EUR
2000+0.29 EUR
4000+0.27 EUR
6000+0.26 EUR
Mindestbestellmenge: 65
Im Einkaufswagen  Stück im Wert von  UAH
IRLR2705TRLPBF INFINEON TECHNOLOGIES irlr2705pbf.pdf?fileId=5546d462533600a40153566cb38f2673 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 20A; Idm: 110A; 68W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 20A
Power dissipation: 68W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 40mΩ
Gate-source voltage: ±16V
Pulsed drain current: 110A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR6225TRPBF IRLR6225TRPBF INFINEON TECHNOLOGIES irlr6225pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 100A; 63W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 100A
Power dissipation: 63W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
auf Bestellung 1571 Stücke:
Lieferzeit 14-21 Tag (e)
61+1.17 EUR
92+0.79 EUR
108+0.67 EUR
116+0.62 EUR
250+0.55 EUR
Mindestbestellmenge: 61
Im Einkaufswagen  Stück im Wert von  UAH
IRLR8743TRPBF IRLR8743TRPBF INFINEON TECHNOLOGIES irlr8743pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 160A; 135W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 160A
Power dissipation: 135W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
2000+1.04 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
IRLR9343TRPBF IRLR9343TRPBF INFINEON TECHNOLOGIES irlr9343pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -20A; 79W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -20A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR3410TRRPBF IRLR3410TRRPBF INFINEON TECHNOLOGIES irlr3410pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR8256TRPBF IRLR8256TRPBF INFINEON TECHNOLOGIES irlr8256pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 81A; 63W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 81A
Power dissipation: 63W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR3105TRPBF IRLR3105TRPBF INFINEON TECHNOLOGIES irlr3105pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 25A; 57W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 25A
Power dissipation: 57W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR8103VTRPBF IRLR8103VTRPBF INFINEON TECHNOLOGIES irlr8103vpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 89A; 89W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 89A
Power dissipation: 89W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR3636TRLPBF INFINEON TECHNOLOGIES IRSDS10828-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 99A; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 99A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR2703TRPBF INFINEON TECHNOLOGIES irlr2703pbf.pdf?fileId=5546d462533600a40153566974c9266a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; Idm: 96A; 45W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Power dissipation: 45W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 96A
On-state resistance: 45mΩ
Gate-source voltage: ±16V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR2908TRPBF IRLR2908TRPBF INFINEON TECHNOLOGIES irlr2908pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 39A; 120W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 39A
Power dissipation: 120W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR3410TRLPBF INFINEON TECHNOLOGIES irlr3410pbf.pdf?fileId=5546d462533600a40153566d14c52695 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; Idm: 60A; 79W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±16V
On-state resistance: 0.105Ω
Pulsed drain current: 60A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR3915TRPBF IRLR3915TRPBF INFINEON TECHNOLOGIES IRLR3915TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 61A; 120W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 61A
Power dissipation: 120W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4310ZPBF IRFB4310ZPBF INFINEON TECHNOLOGIES irfb4310zpbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.15 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4310ZPBFXKMA1 INFINEON TECHNOLOGIES infineon-irfs4310z-datasheet-en.pdf?fileId=5546d462533600a4015356161b4d1e2d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD35N12S3L24ATMA1 INFINEON TECHNOLOGIES Infineon-IPD35N12S3L-24-DS-v01_00-EN.pdf?fileId=5546d462584d1d4a0158baf0752f7fdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 35A; 71W; DPAK,TO252
Mounting: SMD
Case: DPAK; TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 39nC
On-state resistance: 24mΩ
Power dissipation: 71W
Drain current: 35A
Drain-source voltage: 120V
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP180N10N3GXKSA1 IPP180N10N3GXKSA1 INFINEON TECHNOLOGIES IPP180N10N3G-dte.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; 71W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Power dissipation: 71W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 80 Stücke:
Lieferzeit 14-21 Tag (e)
64+1.13 EUR
80+0.89 EUR
Mindestbestellmenge: 64
Im Einkaufswagen  Stück im Wert von  UAH
IPI180N10N3GXKSA1 IPI180N10N3GXKSA1 INFINEON TECHNOLOGIES IPI180N10N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; 71W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Power dissipation: 71W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 461 Stücke:
Lieferzeit 14-21 Tag (e)
49+1.49 EUR
56+1.29 EUR
70+1.03 EUR
250+0.9 EUR
Mindestbestellmenge: 49
Im Einkaufswagen  Stück im Wert von  UAH
IPB180N10S402ATMA1 INFINEON TECHNOLOGIES Infineon-IPB180N10S4_02-DS-v01_00-en.pdf?fileId=db3a30433d1d0bbe013d2129cf8a2f88 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 300W; TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 300W
Case: TO263-7
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 156nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUA180N10S5N029AUMA1 INFINEON TECHNOLOGIES Infineon-IAUA180N10S5N029-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39b1380b38 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 24A; Idm: 561A; 221W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 24A
Pulsed drain current: 561A
Power dissipation: 221W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ISC080N10NM6ATMA1 INFINEON TECHNOLOGIES Infineon-ISC080N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bba32c6cb0211 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 75A; Idm: 13A; 100W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 75A
Pulsed drain current: 13A
Power dissipation: 100W
Case: PG-TDSON-8 FL
Gate-source voltage: 20V
On-state resistance: 8.05mΩ
Mounting: SMD
Gate charge: 24nC
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+1.16 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
IRLU3410PBF IRLU3410PBF INFINEON TECHNOLOGIES irlr3410pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: IPAK
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
46+1.57 EUR
75+0.96 EUR
Mindestbestellmenge: 46
Im Einkaufswagen  Stück im Wert von  UAH
SPD30P06PGBTMA1 SPD30P06PGBTMA1 INFINEON TECHNOLOGIES SPD30P06PGBTMA1-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -30A; 125W; PG-TO252-3
Power dissipation: 125W
Case: PG-TO252-3
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -30A
On-state resistance: 75mΩ
Gate-source voltage: ±20V
auf Bestellung 970 Stücke:
Lieferzeit 14-21 Tag (e)
36+2 EUR
45+1.6 EUR
55+1.32 EUR
65+1.1 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
FM25040B-GTR FM25040B-GTR INFINEON TECHNOLOGIES Infineon-FM25040B_4-Kbit_(512_8)_Serial_(SPI)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec8ff1b416c&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 4.5÷5.5VDC; 20MHz; SO8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Memory: 4kb FRAM
Memory organisation: 512x8bit
Clock frequency: 20MHz
Case: SO8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of interface: serial
Interface: SPI
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256P10TFI010 S29GL256P10TFI010 INFINEON TECHNOLOGIES 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; TSOP56; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S10TFI010 INFINEON TECHNOLOGIES infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; TSOP56; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256P90FFIR20 INFINEON TECHNOLOGIES infineon-s29gl01gp-s29gl512p-s29gl256p-s29gl128p-1-gbit512256128-mbit-3-v-page-flash-with-90-nm-mirrorbit-process-technology-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cyp Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256P10FFI010 INFINEON TECHNOLOGIES 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of memory: NOR
Kind of interface: parallel
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 256Mb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256P11TFI010 INFINEON TECHNOLOGIES 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; TSOP56; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S10DHB020 INFINEON TECHNOLOGIES infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Application: automotive
Access time: 100ns
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S10DHB023 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Application: automotive
Access time: 100ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S10DHI010 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 100ns
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S10DHI020 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 100ns
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S10DHI023 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 100ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S10DHIV10 INFINEON TECHNOLOGIES infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 100ns
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S10DHIV20 INFINEON TECHNOLOGIES infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 100ns
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S10DHIV23 INFINEON TECHNOLOGIES S29GL_128S_01GS_00.pdf Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 100ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S10DHV010 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Access time: 100ns
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S70KL1282GABHV020 Infineon-S70KL1282_S70KS1282_3.0_V_1.8_V_128_Mb_(16_MB)_HYPERBUS_INTERFACE_HYPERRAM_(SELF-REFRESH_DRAM)-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9315b7210
Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S70KL1283GABHV020 Infineon-S70KL1283_S70KS1283_Octal_xSPI_Interface_HyperRam_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee91dc171f9
Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S70KS1282GABHV020 Infineon-S70KL1282_S70KS1282_3.0_V_1.8_V_128_Mb_(16_MB)_HYPERBUS_INTERFACE_HYPERRAM_(SELF-REFRESH_DRAM)-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9315b7210
Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S70KS1282GABHV023 Infineon-S70KL1282_S70KS1282_3.0_V_1.8_V_128_Mb_(16_MB)_HYPERBUS_INTERFACE_HYPERRAM_(SELF-REFRESH_DRAM)-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9315b7210
Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S80KS5122GABHV023 S80KS5122.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷105°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKD04N60RC2ATMA1 Infineon-IKD04N60RC2-DataSheet-v02_01-EN.pdf?fileId=5546d4627645f8770176522334a44d1d
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Transistor: IGBT; Field Stop; 600V; 8A; 36.6W; DPAK
Type of transistor: IGBT
Technology: Field Stop; Trench
Collector-emitter voltage: 600V
Collector current: 8A
Power dissipation: 36.6W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 12A
Mounting: SMD
Gate charge: 24nC
Turn-off time: 90ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLL014NTRPBF description irll014npbf.pdf
IRLL014NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 2A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 2A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
auf Bestellung 8081 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
109+0.66 EUR
144+0.5 EUR
172+0.42 EUR
219+0.33 EUR
250+0.29 EUR
500+0.27 EUR
1000+0.25 EUR
2500+0.23 EUR
5000+0.21 EUR
Mindestbestellmenge: 109
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4615PBF irfb4615pbf.pdf
IRFB4615PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 35A; 144W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 144W
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: tube
Gate charge: 26nC
On-state resistance: 39mΩ
Drain current: 35A
Gate-source voltage: ±20V
Drain-source voltage: 150V
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
65+1.12 EUR
70+1.03 EUR
75+0.96 EUR
Mindestbestellmenge: 65
Im Einkaufswagen  Stück im Wert von  UAH
BSC093N15NS5ATMA1 Infineon-BSC093N15NS5-DS-v02_00-EN.pdf?fileId=5546d462503812bb01507033a3fa1175
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 87A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 139W
Case: PG-TDSON-8
Mounting: SMD
Kind of channel: enhancement
Gate charge: 33nC
On-state resistance: 9.3mΩ
Drain current: 87A
Drain-source voltage: 150V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XMC4700 RELAX KIT xmc4700_4800.pdf
XMC4700 RELAX KIT
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC4700; Comp: XMC4700-F144
Type of development kit: ARM Infineon
Family: XMC4700
Kit contents: development board with XMCmicrocontroller
Components: XMC4700-F144
Interface: CAN x6; EBI; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USIC x2
Connection: pin strips; RJ45; USB B micro x2
Application: building automation; CAV; motors; photovoltaics
Number of add-on connectors: 1
Kind of architecture: Cortex M4
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XMC4800 RELAX ETHERCAT KIT xmc4700_4800.pdf
XMC4800 RELAX ETHERCAT KIT
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC4800; Comp: XMC4800-F144
Type of development kit: ARM Infineon
Family: XMC4800
Kit contents: development board with XMCmicrocontroller; expansion board
Components: XMC4800-F144
Interface: CAN x6; EBI; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USIC x2
Connection: pin strips; RJ45; USB 2.0 x2; USB B micro x2
Application: building automation; CAV; EtherCAT; motors; photovoltaics
Number of add-on connectors: 2
Kind of architecture: Cortex M4
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC009NE2LS5ATMA1 BSC009NE2LS5-DTE.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC009NE2LS5IATMA1 BSC009NE2LS5I-DTE.pdf
BSC009NE2LS5IATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIPS7125RTRL auips7125.pdf?fileId=5546d462533600a4015355a7d96a132a
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.8A; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3.8A
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 24mΩ
Active logical level: high
Operating temperature: -40...150°C
Integrated circuit features: thermal protection
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+6.66 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
AUIPS7091GTR auips7091.pdf?fileId=5546d462533600a4015355a7c0d21322
AUIPS7091GTR
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 8A; Ch: 1; N-Channel; SMD; SO8; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.12Ω
Kind of package: reel
Technology: Classic PROFET
Operating temperature: -40...150°C
Power dissipation: 1.25W
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIPS7111STRL auips7111s.pdf?fileId=5546d462533600a4015355a7c94e1326
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10A; Ch: 1; N-Channel; SMD; D2PAK-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 10A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: D2PAK-5
On-state resistance: 7.5mΩ
Kind of package: reel
Technology: Classic PROFET
Operating temperature: -40...150°C
Power dissipation: 2.5W
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIPS71451GTR auips71451g.pdf?fileId=5546d462533600a4015355a7f7461332
AUIPS71451GTR
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 1; N-Channel; SMD; SO8; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.1Ω
Kind of package: reel
Technology: Classic PROFET
Operating temperature: -40...150°C
Power dissipation: 1.25W
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGS12P2L6E6327XTSA1 Infineon-BGS12P2L6-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016d4487d53603ce
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; TSLP-6-4; 1.65÷3.4VDC; 0.05÷6GHz
Type of integrated circuit: RF switch
Output configuration: SPDT
Case: TSLP-6-4
Supply voltage: 1.65...3.4V DC
Mounting: SMD
Bandwidth: 0.05...6GHz
Application: telecommunication
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGSA12GN10E6327XTSA1 Infineon_AntennaTuningSolutions_2014-06.pdf?fileId=5546d461464245d301468a636c8c6598
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SPDT; TSNP10
Mounting: SMD
Type of integrated circuit: RF switch
Case: TSNP10
Output configuration: SPDT
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7500+0.45 EUR
Mindestbestellmenge: 7500
Im Einkaufswagen  Stück im Wert von  UAH
IPT015N10N5ATMA1 IPT015N10N5-DTE.pdf
IPT015N10N5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 243A; Idm: 1200A; 375W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 243A
Pulsed drain current: 1.2kA
Power dissipation: 375W
Case: PG-HSOF-8
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 169nC
Kind of package: tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPT020N10N5ATMA1 infineon-ipt020n10n5-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR2705TRPBF irlr2705pbf.pdf
IRLR2705TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 28A; 68W; DPAK
Mounting: SMD
Case: DPAK
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Kind of package: reel
Polarisation: unipolar
Power dissipation: 68W
Drain current: 28A
Drain-source voltage: 55V
auf Bestellung 6074 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
65+1.12 EUR
87+0.82 EUR
126+0.57 EUR
148+0.48 EUR
500+0.35 EUR
1000+0.31 EUR
2000+0.29 EUR
4000+0.27 EUR
6000+0.26 EUR
Mindestbestellmenge: 65
Im Einkaufswagen  Stück im Wert von  UAH
IRLR2705TRLPBF irlr2705pbf.pdf?fileId=5546d462533600a40153566cb38f2673
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 20A; Idm: 110A; 68W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 20A
Power dissipation: 68W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 40mΩ
Gate-source voltage: ±16V
Pulsed drain current: 110A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR6225TRPBF irlr6225pbf.pdf
IRLR6225TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 100A; 63W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 100A
Power dissipation: 63W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
auf Bestellung 1571 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.17 EUR
92+0.79 EUR
108+0.67 EUR
116+0.62 EUR
250+0.55 EUR
Mindestbestellmenge: 61
Im Einkaufswagen  Stück im Wert von  UAH
IRLR8743TRPBF irlr8743pbf.pdf
IRLR8743TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 160A; 135W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 160A
Power dissipation: 135W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2000+1.04 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
IRLR9343TRPBF irlr9343pbf.pdf
IRLR9343TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -20A; 79W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -20A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR3410TRRPBF irlr3410pbf.pdf
IRLR3410TRRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR8256TRPBF irlr8256pbf.pdf
IRLR8256TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 81A; 63W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 81A
Power dissipation: 63W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR3105TRPBF irlr3105pbf.pdf
IRLR3105TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 25A; 57W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 25A
Power dissipation: 57W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR8103VTRPBF irlr8103vpbf.pdf
IRLR8103VTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 89A; 89W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 89A
Power dissipation: 89W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR3636TRLPBF IRSDS10828-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 99A; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 99A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR2703TRPBF irlr2703pbf.pdf?fileId=5546d462533600a40153566974c9266a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; Idm: 96A; 45W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Power dissipation: 45W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 96A
On-state resistance: 45mΩ
Gate-source voltage: ±16V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR2908TRPBF irlr2908pbf.pdf
IRLR2908TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 39A; 120W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 39A
Power dissipation: 120W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR3410TRLPBF irlr3410pbf.pdf?fileId=5546d462533600a40153566d14c52695
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; Idm: 60A; 79W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Power dissipation: 79W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±16V
On-state resistance: 0.105Ω
Pulsed drain current: 60A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR3915TRPBF IRLR3915TRPBF.pdf
IRLR3915TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 61A; 120W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 61A
Power dissipation: 120W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4310ZPBF irfb4310zpbf.pdf
IRFB4310ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.15 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IRFB4310ZPBFXKMA1 infineon-irfs4310z-datasheet-en.pdf?fileId=5546d462533600a4015356161b4d1e2d
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD35N12S3L24ATMA1 Infineon-IPD35N12S3L-24-DS-v01_00-EN.pdf?fileId=5546d462584d1d4a0158baf0752f7fdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 35A; 71W; DPAK,TO252
Mounting: SMD
Case: DPAK; TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 39nC
On-state resistance: 24mΩ
Power dissipation: 71W
Drain current: 35A
Drain-source voltage: 120V
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP180N10N3GXKSA1 IPP180N10N3G-dte.pdf
IPP180N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; 71W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Power dissipation: 71W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 80 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
64+1.13 EUR
80+0.89 EUR
Mindestbestellmenge: 64
Im Einkaufswagen  Stück im Wert von  UAH
IPI180N10N3GXKSA1 IPI180N10N3G-DTE.pdf
IPI180N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; 71W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Power dissipation: 71W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 461 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
49+1.49 EUR
56+1.29 EUR
70+1.03 EUR
250+0.9 EUR
Mindestbestellmenge: 49
Im Einkaufswagen  Stück im Wert von  UAH
IPB180N10S402ATMA1 Infineon-IPB180N10S4_02-DS-v01_00-en.pdf?fileId=db3a30433d1d0bbe013d2129cf8a2f88
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 300W; TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 300W
Case: TO263-7
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 156nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUA180N10S5N029AUMA1 Infineon-IAUA180N10S5N029-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39b1380b38
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 24A; Idm: 561A; 221W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 24A
Pulsed drain current: 561A
Power dissipation: 221W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ISC080N10NM6ATMA1 Infineon-ISC080N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bba32c6cb0211
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 75A; Idm: 13A; 100W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 75A
Pulsed drain current: 13A
Power dissipation: 100W
Case: PG-TDSON-8 FL
Gate-source voltage: 20V
On-state resistance: 8.05mΩ
Mounting: SMD
Gate charge: 24nC
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+1.16 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
IRLU3410PBF irlr3410pbf.pdf
IRLU3410PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: IPAK
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
46+1.57 EUR
75+0.96 EUR
Mindestbestellmenge: 46
Im Einkaufswagen  Stück im Wert von  UAH
SPD30P06PGBTMA1 SPD30P06PGBTMA1-DTE.pdf
SPD30P06PGBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -30A; 125W; PG-TO252-3
Power dissipation: 125W
Case: PG-TO252-3
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -30A
On-state resistance: 75mΩ
Gate-source voltage: ±20V
auf Bestellung 970 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+2 EUR
45+1.6 EUR
55+1.32 EUR
65+1.1 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
FM25040B-GTR Infineon-FM25040B_4-Kbit_(512_8)_Serial_(SPI)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec8ff1b416c&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM25040B-GTR
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 4.5÷5.5VDC; 20MHz; SO8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Memory: 4kb FRAM
Memory organisation: 512x8bit
Clock frequency: 20MHz
Case: SO8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of interface: serial
Interface: SPI
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256P10TFI010 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref
S29GL256P10TFI010
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; TSOP56; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S10TFI010 infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; TSOP56; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256P90FFIR20 infineon-s29gl01gp-s29gl512p-s29gl256p-s29gl128p-1-gbit512256128-mbit-3-v-page-flash-with-90-nm-mirrorbit-process-technology-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cyp
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256P10FFI010 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; BGA64; parallel
Case: BGA64
Mounting: SMD
Kind of memory: NOR
Kind of interface: parallel
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 256Mb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256P11TFI010 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; TSOP56; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S10DHB020 infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Application: automotive
Access time: 100ns
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S10DHB023 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Application: automotive
Access time: 100ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S10DHI010 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 100ns
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S10DHI020 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 100ns
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S10DHI023 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 100ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S10DHIV10 infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 100ns
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S10DHIV20 infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 100ns
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S10DHIV23 S29GL_128S_01GS_00.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 100ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S10DHV010 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Access time: 100ns
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 197 394 591 788 985 1182 1379 1576 1773 1952 1953 1954 1955 1956 1957 1958 1959 1960 1961 1962 1970 1977  [ Nächste Seite >> ]