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IRF9540NPBF IRF9540NPBF INFINEON TECHNOLOGIES irf9540n.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23A; 140W; TO220AB
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.117Ω
Mounting: THT
Gate charge: 64.7nC
Kind of channel: enhancement
Kind of package: tube
Produkt ist nicht verfügbar
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IRF9540NSTRLPBF IRF9540NSTRLPBF INFINEON TECHNOLOGIES irf9540nspbf.pdf description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
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IRFP1405PBF IRFP1405PBF INFINEON TECHNOLOGIES irfp1405pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 310W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 310W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
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26+2.79 EUR
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IRFP140NPBF IRFP140NPBF INFINEON TECHNOLOGIES irfp140n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 27A; 94W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 27A
Power dissipation: 94W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 62.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 100 Stücke:
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55+1.32 EUR
61+1.17 EUR
67+1.07 EUR
100+1.02 EUR
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KIT_XMC11_BOOT_001 KIT_XMC11_BOOT_001 INFINEON TECHNOLOGIES KIT-XMC11-BOOT-001-DTE.pdf Category: Development kits - others
Description: Dev.kit: ARM Infineon; Comp: XMC1100; Architecture: Cortex M0
Type of development kit: ARM Infineon
Kind of connector: pin strips; USB B micro
Components: XMC1100
Programmers and development kits features: 3,3V voltage regulator; 5V voltage regulator; connector with SPI signal lines; LED x6; SEGGER J-Link OB Debugger; UART
Kind of architecture: Cortex M0
Produkt ist nicht verfügbar
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BSC150N03LDGATMA1 BSC150N03LDGATMA1 INFINEON TECHNOLOGIES BSC150N03LDG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 26W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 26W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSO150N03MDGXUMA1 BSO150N03MDGXUMA1 INFINEON TECHNOLOGIES BSO150N03MDG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.3A; 1.56W; PG-DSO-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.3A
Power dissipation: 1.56W
Case: PG-DSO-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BAT6804WH6327XTSA1 BAT6804WH6327XTSA1 INFINEON TECHNOLOGIES BAT6804E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 8V; 0.13A; 150mW
Mounting: SMD
Load current: 0.13A
Power dissipation: 0.15W
Max. forward voltage: 0.5V
Max. off-state voltage: 8V
Semiconductor structure: double series
Case: SOT323
Type of diode: Schottky switching
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194+0.37 EUR
222+0.32 EUR
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IR2117PBF IR2117PBF INFINEON TECHNOLOGIES ir2117.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 125ns
Turn-off time: 105ns
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IR2117SPBF IR2117SPBF INFINEON TECHNOLOGIES ir2117.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 125ns
Turn-off time: 105ns
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46+1.57 EUR
51+1.42 EUR
57+1.27 EUR
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IR2111PBF IR2111PBF INFINEON TECHNOLOGIES ir2111.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 830ns
Turn-off time: 190ns
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IR2111SPBF IR2111SPBF INFINEON TECHNOLOGIES IR2111SPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 830ns
Turn-off time: 190ns
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49+1.47 EUR
95+1.44 EUR
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BC847PNH6327XTSA1 BC847PNH6327XTSA1 INFINEON TECHNOLOGIES BC846PNH6327.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
Kind of transistor: complementary pair
auf Bestellung 1905 Stücke:
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424+0.17 EUR
544+0.13 EUR
1000+0.094 EUR
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BSS214NWH6327XTSA1 BSS214NWH6327XTSA1 INFINEON TECHNOLOGIES BSS214NWH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT323
Case: SOT323
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
On-state resistance: 0.25Ω
Power dissipation: 0.5W
Drain current: 1.5A
Gate-source voltage: ±12V
Drain-source voltage: 20V
auf Bestellung 129 Stücke:
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129+0.56 EUR
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IRL2505STRLPBF INFINEON TECHNOLOGIES irl2505spbf.pdf?fileId=5546d462533600a40153565b75022502 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 74A; Idm: 360A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 74A
Pulsed drain current: 360A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD50N10S3L16ATMA1 INFINEON TECHNOLOGIES Infineon-IPD50N10S3L_16-DS-v01_02-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a908698d3594e&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 38A; Idm: 200A
Technology: OptiMOS® -T
On-state resistance: 15mΩ
Gate-source voltage: ±20V
Power dissipation: 100W
Pulsed drain current: 200A
Case: PG-TO252-3-11
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain current: 38A
Drain-source voltage: 100V
Produkt ist nicht verfügbar
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IKW40N120H3FKSA1 IKW40N120H3FKSA1 INFINEON TECHNOLOGIES IKW40N120H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 80A; 483W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 80A
Power dissipation: 483W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H3
Technology: TRENCHSTOP™ 3
auf Bestellung 3 Stücke:
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3+23.84 EUR
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IKW40N120T2FKSA1 IKW40N120T2FKSA1 INFINEON TECHNOLOGIES IKW40N120T2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 480W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 165A
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
auf Bestellung 46 Stücke:
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10+7.49 EUR
11+6.65 EUR
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PVT422PBF PVT422PBF INFINEON TECHNOLOGIES pvt422.pdf description Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Ucntrl: 1.25VDC; Icntrl: 2÷25mA; 350mA
Type of relay: solid state
Contacts configuration: DPST-NO
Control voltage: 1.25V DC
Control current: 2...25mA
Max. operating current: 350mA
Switched voltage: 0...400V AC; 0...400V DC
Manufacturer series: PVT422PbF
Relay variant: MOSFET
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Operate time: 2ms
Release time: 0.5ms
Operating temperature: -40...85°C
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PVT422SPBF PVT422SPBF INFINEON TECHNOLOGIES pvt422.pdf description Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Ucntrl: 1.2VDC; Icntrl: 2÷25mA; 350mA
Type of relay: solid state
Contacts configuration: DPST-NO
Control voltage: 1.2V DC
Control current: 2...25mA
Max. operating current: 350mA
Switched voltage: 0...400V AC; 0...400V DC
Manufacturer series: PVT422PbF
Relay variant: MOSFET
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operate time: 2ms
Release time: 0.5ms
Operating temperature: -40...85°C
auf Bestellung 10 Stücke:
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8+9.3 EUR
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IGB20N65S5ATMA1 IGB20N65S5ATMA1 INFINEON TECHNOLOGIES IGB20N65S5.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 28A; 62.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 62.5W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector current: 28A
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Collector-emitter voltage: 650V
Turn-on time: 27ns
Gate charge: 48nC
Turn-off time: 137ns
Produkt ist nicht verfügbar
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IHW20N65R5XKSA1 IHW20N65R5XKSA1 INFINEON TECHNOLOGIES IHW20N65R5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 75W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 75W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 97nC
Turn-off time: 257ns
Produkt ist nicht verfügbar
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IKB20N65EH5ATMA1 IKB20N65EH5ATMA1 INFINEON TECHNOLOGIES IKB20N65EH5.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 62.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 62.5W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector current: 25A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 40ns
Gate charge: 48nC
Turn-off time: 183ns
auf Bestellung 909 Stücke:
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22+3.27 EUR
28+2.65 EUR
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SPA11N80C3 SPA11N80C3 INFINEON TECHNOLOGIES description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 34W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 34W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 481 Stücke:
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23+3.2 EUR
36+2 EUR
37+1.94 EUR
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IRF7103TRPBF IRF7103TRPBF INFINEON TECHNOLOGIES irf7103pbf.pdf description Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 3A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 3A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 2W
Technology: HEXFET®
auf Bestellung 5424 Stücke:
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122+0.59 EUR
138+0.52 EUR
179+0.4 EUR
250+0.34 EUR
500+0.3 EUR
1000+0.26 EUR
4000+0.24 EUR
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AUIRF7103QTR AUIRF7103QTR INFINEON TECHNOLOGIES irf7103qpbf.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 3A; 2.4W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 3A
Case: SO8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 0.2Ω
Power dissipation: 2.4W
Gate charge: 10nC
Gate-source voltage: ±20V
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRFZ34NPBF IRFZ34NPBF INFINEON TECHNOLOGIES irfz34n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 26A; 56W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 26A
Power dissipation: 56W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 22.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 2723 Stücke:
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186+0.39 EUR
200+0.36 EUR
210+0.34 EUR
500+0.31 EUR
1000+0.29 EUR
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IRFZ34NSTRLPBF IRFZ34NSTRLPBF INFINEON TECHNOLOGIES irfz34nspbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 29A; 68W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 29A
Power dissipation: 68W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 78 Stücke:
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74+0.97 EUR
78+0.92 EUR
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BTS721L1 BTS721L1 INFINEON TECHNOLOGIES BTS721L1.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.9÷6.3A; Ch: 4; N-Channel; SMD; DSO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.9...6.3A
Number of channels: 4
Mounting: SMD
Case: DSO20
On-state resistance: 25mΩ
Supply voltage: 5...34V DC
Technology: Classic PROFET
Kind of output: N-Channel
Power dissipation: 3.7W
auf Bestellung 673 Stücke:
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10+7.35 EUR
13+5.79 EUR
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IRFP4568PBF IRFP4568PBF INFINEON TECHNOLOGIES irfp4568pbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 171A; 517W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 171A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 5.9mΩ
Gate-source voltage: ±30V
Gate charge: 151nC
Technology: HEXFET®
Power dissipation: 517W
auf Bestellung 5 Stücke:
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5+14.3 EUR
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IGP40N65F5XKSA1 IGP40N65F5XKSA1 INFINEON TECHNOLOGIES IGP40N65F5XKSA1-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 45A; 125W; TO220-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 125W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 45A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Manufacturer series: F5
auf Bestellung 474 Stücke:
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23+3.25 EUR
25+2.87 EUR
26+2.76 EUR
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IGP40N65H5XKSA1 IGP40N65H5XKSA1 INFINEON TECHNOLOGIES DS_IGP_IGW40N65H5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013af52fd5b600b6 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 74A; 250W; TO220-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 74A
Power dissipation: 250W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H5
auf Bestellung 351 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.17 EUR
29+2.47 EUR
34+2.16 EUR
40+1.82 EUR
50+1.62 EUR
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IGW40N65F5FKSA1 IGW40N65F5FKSA1 INFINEON TECHNOLOGIES IGP40N65F5XKSA1-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 250W; TO247-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 46A
Pulsed collector current: 20A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Manufacturer series: F5
auf Bestellung 59 Stücke:
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19+3.8 EUR
21+3.49 EUR
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IGW40N65H5FKSA1 IGW40N65H5FKSA1 INFINEON TECHNOLOGIES IGW40N65H5FKSA1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 250W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
auf Bestellung 227 Stücke:
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19+3.83 EUR
30+3.25 EUR
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IHW40N65R5XKSA1 IHW40N65R5XKSA1 INFINEON TECHNOLOGIES IHW40N65R5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 152W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 152W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 273ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ 5
auf Bestellung 26 Stücke:
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22+3.4 EUR
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IHW40N65R6XKSA1 IHW40N65R6XKSA1 INFINEON TECHNOLOGIES Infineon-IHW40N65R6-DataSheet-v01_20-EN.pdf?fileId=5546d46277fc7439017826e19dad7275 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 105W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 105W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 159nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 256ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
auf Bestellung 146 Stücke:
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22+3.29 EUR
26+2.79 EUR
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IKB40N65EF5ATMA1 IKB40N65EF5ATMA1 INFINEON TECHNOLOGIES IKB40N65EF5.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Turn-on time: 56ns
Turn-off time: 212ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
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IKB40N65EH5ATMA1 IKB40N65EH5ATMA1 INFINEON TECHNOLOGIES IKB40N65EH5.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Turn-on time: 34ns
Turn-off time: 178ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
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IKB40N65ES5ATMA1 IKB40N65ES5ATMA1 INFINEON TECHNOLOGIES IKB40N65ES5.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 115W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 115W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Turn-on time: 37ns
Turn-off time: 153ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
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IKP40N65F5XKSA1 IKP40N65F5XKSA1 INFINEON TECHNOLOGIES IKP40N65F5-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 255W; TO220-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 255W
Case: TO220-3
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Collector current: 46A
Pulsed collector current: 120A
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 650V
Manufacturer series: F5
Produkt ist nicht verfügbar
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IKP40N65H5XKSA1 IKP40N65H5XKSA1 INFINEON TECHNOLOGIES IKP40N65H5-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 255W; TO220-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 255W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
Produkt ist nicht verfügbar
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IKW40N65ES5XKSA1 IKW40N65ES5XKSA1 INFINEON TECHNOLOGIES IKW40N65ES5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 115W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 115W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Turn-on time: 37ns
Turn-off time: 153ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
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IKW40N65F5FKSA1 IKW40N65F5FKSA1 INFINEON TECHNOLOGIES IKW40N65F5-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 74A; 250W; TO247-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 74A
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 650V
Manufacturer series: F5
auf Bestellung 138 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.2 EUR
21+3.52 EUR
30+2.42 EUR
32+2.27 EUR
Mindestbestellmenge: 18
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IKW40N65H5FKSA1 IKW40N65H5FKSA1 INFINEON TECHNOLOGIES IKW40N65H5-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 74A; 250W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 74A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
Produkt ist nicht verfügbar
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IKW40N65WR5XKSA1 IKW40N65WR5XKSA1 INFINEON TECHNOLOGIES IKW40N65WR5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 115W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 115W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 448ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.51 EUR
Mindestbestellmenge: 11
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SN7002WH6327XTSA1 SN7002WH6327XTSA1 INFINEON TECHNOLOGIES SN7002WH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.5W; SOT323
Mounting: SMD
Drain-source voltage: 60V
Drain current: 0.23A
Power dissipation: 0.5W
On-state resistance: 5Ω
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SIPMOS™
Case: SOT323
auf Bestellung 1667 Stücke:
Lieferzeit 14-21 Tag (e)
264+0.27 EUR
317+0.23 EUR
374+0.19 EUR
652+0.11 EUR
844+0.085 EUR
1025+0.07 EUR
Mindestbestellmenge: 264
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IRFS3207TRLPBF IRFS3207TRLPBF INFINEON TECHNOLOGIES irfs3207pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 180A; 330W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel
Drain-source voltage: 75V
Drain current: 180A
Power dissipation: 330W
Polarisation: unipolar
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IRFZ24NPBF IRFZ24NPBF INFINEON TECHNOLOGIES irfz24n.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 45W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 45W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 13.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 1639 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
196+0.37 EUR
228+0.31 EUR
500+0.3 EUR
Mindestbestellmenge: 152
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IR2110PBF IR2110PBF INFINEON TECHNOLOGIES ir2110_2113.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Mounting: THT
Operating temperature: -40...125°C
Output current: -2...2A
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Turn-off time: 111ns
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Type of integrated circuit: driver
Case: DIP14
Voltage class: 500V
Kind of package: tube
Turn-on time: 145ns
auf Bestellung 965 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.66 EUR
23+3.12 EUR
27+2.7 EUR
29+2.55 EUR
50+2.43 EUR
100+2.33 EUR
250+2.22 EUR
500+2.2 EUR
Mindestbestellmenge: 20
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IR2110SPBF IR2110SPBF INFINEON TECHNOLOGIES ir2110_2113.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Mounting: SMD
Operating temperature: -40...125°C
Output current: -2...2A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Turn-off time: 111ns
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Type of integrated circuit: driver
Case: SO16-W
Voltage class: 500V
Kind of package: tube
Turn-on time: 145ns
auf Bestellung 251 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.19 EUR
24+3.1 EUR
26+2.8 EUR
45+2.63 EUR
135+2.33 EUR
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IR2110STRPBF IR2110STRPBF INFINEON TECHNOLOGIES IR2110STRPBF.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Mounting: SMD
Operating temperature: -40...125°C
Output current: -2...2A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Turn-off time: 111ns
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Type of integrated circuit: driver
Case: SO16-W
Voltage class: 500V
Kind of package: reel; tape
Turn-on time: 145ns
auf Bestellung 911 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.16 EUR
26+2.85 EUR
31+2.37 EUR
33+2.19 EUR
50+2.07 EUR
100+1.97 EUR
250+1.87 EUR
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IHW20N135R5XKSA1 IHW20N135R5XKSA1 INFINEON TECHNOLOGIES IHW20N135R5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.35kV; 20A; 144W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 20A
Power dissipation: 144W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 440ns
Technology: TRENCHSTOP™ RC
auf Bestellung 370 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.79 EUR
27+2.69 EUR
30+2.46 EUR
34+2.13 EUR
60+2 EUR
Mindestbestellmenge: 19
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1EDN7512BXTSA1 1EDN7512BXTSA1 INFINEON TECHNOLOGIES 1EDN751x_1EDN851x.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; EiceDRIVER™
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; low-side
Technology: EiceDRIVER™
Case: PG-SOT23-5
Output current: -8...4A
Number of channels: 1
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 4.5...20V
auf Bestellung 1698 Stücke:
Lieferzeit 14-21 Tag (e)
117+0.61 EUR
126+0.57 EUR
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IRLML0040TRPBF IRLML0040TRPBF INFINEON TECHNOLOGIES irlml0040pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 3.6A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 3.6A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 70151 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
228+0.31 EUR
400+0.18 EUR
575+0.12 EUR
1000+0.11 EUR
3000+0.089 EUR
6000+0.081 EUR
9000+0.077 EUR
15000+0.075 EUR
Mindestbestellmenge: 152
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IRLML0100TRPBF IRLML0100TRPBF INFINEON TECHNOLOGIES irlml0100pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.6A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.6A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 19650 Stücke:
Lieferzeit 14-21 Tag (e)
139+0.51 EUR
203+0.35 EUR
350+0.2 EUR
500+0.15 EUR
1000+0.13 EUR
3000+0.11 EUR
Mindestbestellmenge: 139
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IRLML6244TRPBF IRLML6244TRPBF INFINEON TECHNOLOGIES irlml6244pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.3A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.3A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 8.9nC
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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BC848BE6327HTSA1 BC848BE6327HTSA1 INFINEON TECHNOLOGIES bc847_8_9_bc850.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 2740 Stücke:
Lieferzeit 14-21 Tag (e)
1140+0.064 EUR
1260+0.057 EUR
1420+0.05 EUR
Mindestbestellmenge: 1140
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IRF7342TRPBF IRF7342TRPBF INFINEON TECHNOLOGIES irf7342pbf.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -55V; -3.4A; 2W; SO8
Case: SO8
Mounting: SMD
Power dissipation: 2W
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: P-MOSFET x2
Kind of package: reel
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -3.4A
auf Bestellung 5489 Stücke:
Lieferzeit 14-21 Tag (e)
41+1.77 EUR
61+1.18 EUR
72+1 EUR
100+0.76 EUR
250+0.62 EUR
500+0.53 EUR
1000+0.45 EUR
2000+0.41 EUR
Mindestbestellmenge: 41
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IKD04N60RATMA1 IKD04N60RATMA1 INFINEON TECHNOLOGIES IKD04N60R.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 4A
Power dissipation: 75W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 12A
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 317ns
Turn-on time: 22ns
Technology: TRENCHSTOP™ RC
auf Bestellung 2451 Stücke:
Lieferzeit 14-21 Tag (e)
55+1.3 EUR
75+0.96 EUR
106+0.67 EUR
122+0.59 EUR
200+0.57 EUR
Mindestbestellmenge: 55
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IKP04N60TXKSA1 IKP04N60TXKSA1 INFINEON TECHNOLOGIES IKP04N60T.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 42W; TO220-3
Type of transistor: IGBT
Power dissipation: 42W
Case: TO220-3
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Turn-on time: 21ns
Turn-off time: 207ns
Collector current: 4A
Pulsed collector current: 12A
auf Bestellung 336 Stücke:
Lieferzeit 14-21 Tag (e)
42+1.73 EUR
71+1.02 EUR
83+0.86 EUR
89+0.81 EUR
98+0.73 EUR
103+0.69 EUR
250+0.64 EUR
Mindestbestellmenge: 42
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IRF9540NPBF irf9540n.pdf
IRF9540NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23A; 140W; TO220AB
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.117Ω
Mounting: THT
Gate charge: 64.7nC
Kind of channel: enhancement
Kind of package: tube
Produkt ist nicht verfügbar
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IRF9540NSTRLPBF description irf9540nspbf.pdf
IRF9540NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23A; 3.8W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
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IRFP1405PBF irfp1405pbf.pdf
IRFP1405PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 110A; 310W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 110A
Power dissipation: 310W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.52 EUR
26+2.79 EUR
Mindestbestellmenge: 21
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IRFP140NPBF irfp140n.pdf
IRFP140NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 27A; 94W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 27A
Power dissipation: 94W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 62.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.16 EUR
55+1.32 EUR
61+1.17 EUR
67+1.07 EUR
100+1.02 EUR
Mindestbestellmenge: 34
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KIT_XMC11_BOOT_001 KIT-XMC11-BOOT-001-DTE.pdf
KIT_XMC11_BOOT_001
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: ARM Infineon; Comp: XMC1100; Architecture: Cortex M0
Type of development kit: ARM Infineon
Kind of connector: pin strips; USB B micro
Components: XMC1100
Programmers and development kits features: 3,3V voltage regulator; 5V voltage regulator; connector with SPI signal lines; LED x6; SEGGER J-Link OB Debugger; UART
Kind of architecture: Cortex M0
Produkt ist nicht verfügbar
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BSC150N03LDGATMA1 BSC150N03LDG-DTE.pdf
BSC150N03LDGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 26W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 26W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSO150N03MDGXUMA1 BSO150N03MDG-DTE.pdf
BSO150N03MDGXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.3A; 1.56W; PG-DSO-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9.3A
Power dissipation: 1.56W
Case: PG-DSO-8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BAT6804WH6327XTSA1 BAT6804E6327HTSA1.pdf
BAT6804WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 8V; 0.13A; 150mW
Mounting: SMD
Load current: 0.13A
Power dissipation: 0.15W
Max. forward voltage: 0.5V
Max. off-state voltage: 8V
Semiconductor structure: double series
Case: SOT323
Type of diode: Schottky switching
auf Bestellung 1785 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
143+0.5 EUR
194+0.37 EUR
222+0.32 EUR
Mindestbestellmenge: 143
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IR2117PBF ir2117.pdf
IR2117PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 125ns
Turn-off time: 105ns
auf Bestellung 231 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.33 EUR
50+2.16 EUR
Mindestbestellmenge: 31
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IR2117SPBF description ir2117.pdf
IR2117SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 125ns
Turn-off time: 105ns
auf Bestellung 210 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
42+1.73 EUR
46+1.57 EUR
51+1.42 EUR
57+1.27 EUR
Mindestbestellmenge: 42
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IR2111PBF description ir2111.pdf
IR2111PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 830ns
Turn-off time: 190ns
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.56 EUR
Mindestbestellmenge: 28
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IR2111SPBF description IR2111SPBF.pdf
IR2111SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 830ns
Turn-off time: 190ns
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
49+1.47 EUR
95+1.44 EUR
Mindestbestellmenge: 49
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BC847PNH6327XTSA1 BC846PNH6327.pdf
BC847PNH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
Kind of transistor: complementary pair
auf Bestellung 1905 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
424+0.17 EUR
544+0.13 EUR
1000+0.094 EUR
Mindestbestellmenge: 295
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BSS214NWH6327XTSA1 BSS214NWH6327XTSA1.pdf
BSS214NWH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT323
Case: SOT323
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
On-state resistance: 0.25Ω
Power dissipation: 0.5W
Drain current: 1.5A
Gate-source voltage: ±12V
Drain-source voltage: 20V
auf Bestellung 129 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
Mindestbestellmenge: 129
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IRL2505STRLPBF irl2505spbf.pdf?fileId=5546d462533600a40153565b75022502
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 74A; Idm: 360A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 74A
Pulsed drain current: 360A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±16V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD50N10S3L16ATMA1 Infineon-IPD50N10S3L_16-DS-v01_02-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a908698d3594e&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 100V; 38A; Idm: 200A
Technology: OptiMOS® -T
On-state resistance: 15mΩ
Gate-source voltage: ±20V
Power dissipation: 100W
Pulsed drain current: 200A
Case: PG-TO252-3-11
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain current: 38A
Drain-source voltage: 100V
Produkt ist nicht verfügbar
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IKW40N120H3FKSA1 IKW40N120H3-DTE.pdf
IKW40N120H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 80A; 483W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 80A
Power dissipation: 483W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H3
Technology: TRENCHSTOP™ 3
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+23.84 EUR
Mindestbestellmenge: 3
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IKW40N120T2FKSA1 IKW40N120T2.pdf
IKW40N120T2FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 480W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 165A
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.49 EUR
11+6.65 EUR
Mindestbestellmenge: 10
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PVT422PBF description pvt422.pdf
PVT422PBF
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Ucntrl: 1.25VDC; Icntrl: 2÷25mA; 350mA
Type of relay: solid state
Contacts configuration: DPST-NO
Control voltage: 1.25V DC
Control current: 2...25mA
Max. operating current: 350mA
Switched voltage: 0...400V AC; 0...400V DC
Manufacturer series: PVT422PbF
Relay variant: MOSFET
On-state resistance: 35Ω
Mounting: THT
Case: DIP8
Operate time: 2ms
Release time: 0.5ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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PVT422SPBF description pvt422.pdf
PVT422SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Ucntrl: 1.2VDC; Icntrl: 2÷25mA; 350mA
Type of relay: solid state
Contacts configuration: DPST-NO
Control voltage: 1.2V DC
Control current: 2...25mA
Max. operating current: 350mA
Switched voltage: 0...400V AC; 0...400V DC
Manufacturer series: PVT422PbF
Relay variant: MOSFET
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Operate time: 2ms
Release time: 0.5ms
Operating temperature: -40...85°C
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.3 EUR
Mindestbestellmenge: 8
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IGB20N65S5ATMA1 IGB20N65S5.pdf
IGB20N65S5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 28A; 62.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 62.5W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector current: 28A
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Collector-emitter voltage: 650V
Turn-on time: 27ns
Gate charge: 48nC
Turn-off time: 137ns
Produkt ist nicht verfügbar
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IHW20N65R5XKSA1 IHW20N65R5.pdf
IHW20N65R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 75W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 75W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 97nC
Turn-off time: 257ns
Produkt ist nicht verfügbar
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IKB20N65EH5ATMA1 IKB20N65EH5.pdf
IKB20N65EH5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 62.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 62.5W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Collector current: 25A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 40ns
Gate charge: 48nC
Turn-off time: 183ns
auf Bestellung 909 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.27 EUR
28+2.65 EUR
Mindestbestellmenge: 22
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SPA11N80C3 description
SPA11N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 34W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 34W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 481 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.2 EUR
36+2 EUR
37+1.94 EUR
Mindestbestellmenge: 23
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IRF7103TRPBF description irf7103pbf.pdf
IRF7103TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 3A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 3A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 2W
Technology: HEXFET®
auf Bestellung 5424 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
122+0.59 EUR
138+0.52 EUR
179+0.4 EUR
250+0.34 EUR
500+0.3 EUR
1000+0.26 EUR
4000+0.24 EUR
Mindestbestellmenge: 122
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AUIRF7103QTR irf7103qpbf.pdf
AUIRF7103QTR
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 3A; 2.4W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 3A
Case: SO8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 0.2Ω
Power dissipation: 2.4W
Gate charge: 10nC
Gate-source voltage: ±20V
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRFZ34NPBF irfz34n.pdf
IRFZ34NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 26A; 56W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 26A
Power dissipation: 56W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 22.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 2723 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
200+0.36 EUR
210+0.34 EUR
500+0.31 EUR
1000+0.29 EUR
Mindestbestellmenge: 186
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IRFZ34NSTRLPBF irfz34nspbf.pdf
IRFZ34NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 29A; 68W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 29A
Power dissipation: 68W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 78 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
74+0.97 EUR
78+0.92 EUR
Mindestbestellmenge: 74
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BTS721L1 BTS721L1.pdf
BTS721L1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.9÷6.3A; Ch: 4; N-Channel; SMD; DSO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.9...6.3A
Number of channels: 4
Mounting: SMD
Case: DSO20
On-state resistance: 25mΩ
Supply voltage: 5...34V DC
Technology: Classic PROFET
Kind of output: N-Channel
Power dissipation: 3.7W
auf Bestellung 673 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.35 EUR
13+5.79 EUR
Mindestbestellmenge: 10
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IRFP4568PBF description irfp4568pbf.pdf
IRFP4568PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 171A; 517W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 171A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 5.9mΩ
Gate-source voltage: ±30V
Gate charge: 151nC
Technology: HEXFET®
Power dissipation: 517W
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.3 EUR
Mindestbestellmenge: 5
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IGP40N65F5XKSA1 IGP40N65F5XKSA1-DTE.pdf
IGP40N65F5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 45A; 125W; TO220-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 125W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 45A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Manufacturer series: F5
auf Bestellung 474 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.25 EUR
25+2.87 EUR
26+2.76 EUR
Mindestbestellmenge: 23
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IGP40N65H5XKSA1 DS_IGP_IGW40N65H5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013af52fd5b600b6
IGP40N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 74A; 250W; TO220-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 74A
Power dissipation: 250W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H5
auf Bestellung 351 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.17 EUR
29+2.47 EUR
34+2.16 EUR
40+1.82 EUR
50+1.62 EUR
Mindestbestellmenge: 23
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IGW40N65F5FKSA1 IGP40N65F5XKSA1-DTE.pdf
IGW40N65F5FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 250W; TO247-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 46A
Pulsed collector current: 20A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Manufacturer series: F5
auf Bestellung 59 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.8 EUR
21+3.49 EUR
25+2.89 EUR
Mindestbestellmenge: 19
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IGW40N65H5FKSA1 IGW40N65H5FKSA1.pdf
IGW40N65H5FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 250W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
auf Bestellung 227 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.83 EUR
30+3.25 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
IHW40N65R5XKSA1 IHW40N65R5.pdf
IHW40N65R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 152W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 152W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 273ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ 5
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.4 EUR
26+2.75 EUR
Mindestbestellmenge: 22
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IHW40N65R6XKSA1 Infineon-IHW40N65R6-DataSheet-v01_20-EN.pdf?fileId=5546d46277fc7439017826e19dad7275
IHW40N65R6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 105W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 105W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 159nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 256ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
auf Bestellung 146 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.29 EUR
26+2.79 EUR
Mindestbestellmenge: 22
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IKB40N65EF5ATMA1 IKB40N65EF5.pdf
IKB40N65EF5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Turn-on time: 56ns
Turn-off time: 212ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKB40N65EH5ATMA1 IKB40N65EH5.pdf
IKB40N65EH5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 125W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 125W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Turn-on time: 34ns
Turn-off time: 178ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKB40N65ES5ATMA1 IKB40N65ES5.pdf
IKB40N65ES5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 115W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 115W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Turn-on time: 37ns
Turn-off time: 153ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP40N65F5XKSA1 IKP40N65F5-DTE.pdf
IKP40N65F5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 255W; TO220-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 255W
Case: TO220-3
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Collector current: 46A
Pulsed collector current: 120A
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 650V
Manufacturer series: F5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP40N65H5XKSA1 IKP40N65H5-DTE.pdf
IKP40N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 46A; 255W; TO220-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 46A
Power dissipation: 255W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N65ES5XKSA1 IKW40N65ES5.pdf
IKW40N65ES5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 115W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 115W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Turn-on time: 37ns
Turn-off time: 153ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N65F5FKSA1 IKW40N65F5-DTE.pdf
IKW40N65F5FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 74A; 250W; TO247-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 74A
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 650V
Manufacturer series: F5
auf Bestellung 138 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.2 EUR
21+3.52 EUR
30+2.42 EUR
32+2.27 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N65H5FKSA1 IKW40N65H5-DTE.pdf
IKW40N65H5FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 74A; 250W; TO247-3; H5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 74A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Manufacturer series: H5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N65WR5XKSA1 IKW40N65WR5.pdf
IKW40N65WR5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 115W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 115W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 193nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 448ns
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.51 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
SN7002WH6327XTSA1 SN7002WH6327XTSA1.pdf
SN7002WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.5W; SOT323
Mounting: SMD
Drain-source voltage: 60V
Drain current: 0.23A
Power dissipation: 0.5W
On-state resistance: 5Ω
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SIPMOS™
Case: SOT323
auf Bestellung 1667 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
317+0.23 EUR
374+0.19 EUR
652+0.11 EUR
844+0.085 EUR
1025+0.07 EUR
Mindestbestellmenge: 264
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IRFS3207TRLPBF irfs3207pbf.pdf
IRFS3207TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 180A; 330W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel
Drain-source voltage: 75V
Drain current: 180A
Power dissipation: 330W
Polarisation: unipolar
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFZ24NPBF description irfz24n.pdf
IRFZ24NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 45W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 45W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 13.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 1639 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
196+0.37 EUR
228+0.31 EUR
500+0.3 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
IR2110PBF ir2110_2113.pdf
IR2110PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Mounting: THT
Operating temperature: -40...125°C
Output current: -2...2A
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Turn-off time: 111ns
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Type of integrated circuit: driver
Case: DIP14
Voltage class: 500V
Kind of package: tube
Turn-on time: 145ns
auf Bestellung 965 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.66 EUR
23+3.12 EUR
27+2.7 EUR
29+2.55 EUR
50+2.43 EUR
100+2.33 EUR
250+2.22 EUR
500+2.2 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IR2110SPBF description ir2110_2113.pdf
IR2110SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Mounting: SMD
Operating temperature: -40...125°C
Output current: -2...2A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Turn-off time: 111ns
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Type of integrated circuit: driver
Case: SO16-W
Voltage class: 500V
Kind of package: tube
Turn-on time: 145ns
auf Bestellung 251 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.19 EUR
24+3.1 EUR
26+2.8 EUR
45+2.63 EUR
135+2.33 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
IR2110STRPBF description IR2110STRPBF.pdf
IR2110STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Mounting: SMD
Operating temperature: -40...125°C
Output current: -2...2A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Turn-off time: 111ns
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Type of integrated circuit: driver
Case: SO16-W
Voltage class: 500V
Kind of package: reel; tape
Turn-on time: 145ns
auf Bestellung 911 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.16 EUR
26+2.85 EUR
31+2.37 EUR
33+2.19 EUR
50+2.07 EUR
100+1.97 EUR
250+1.87 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
IHW20N135R5XKSA1 IHW20N135R5.pdf
IHW20N135R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.35kV; 20A; 144W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 20A
Power dissipation: 144W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 440ns
Technology: TRENCHSTOP™ RC
auf Bestellung 370 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.79 EUR
27+2.69 EUR
30+2.46 EUR
34+2.13 EUR
60+2 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
1EDN7512BXTSA1 1EDN751x_1EDN851x.pdf
1EDN7512BXTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; EiceDRIVER™
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; low-side
Technology: EiceDRIVER™
Case: PG-SOT23-5
Output current: -8...4A
Number of channels: 1
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 4.5...20V
auf Bestellung 1698 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
117+0.61 EUR
126+0.57 EUR
Mindestbestellmenge: 117
Im Einkaufswagen  Stück im Wert von  UAH
IRLML0040TRPBF irlml0040pbf.pdf
IRLML0040TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 3.6A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 3.6A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 70151 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
228+0.31 EUR
400+0.18 EUR
575+0.12 EUR
1000+0.11 EUR
3000+0.089 EUR
6000+0.081 EUR
9000+0.077 EUR
15000+0.075 EUR
Mindestbestellmenge: 152
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IRLML0100TRPBF irlml0100pbf.pdf
IRLML0100TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.6A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.6A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 19650 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
139+0.51 EUR
203+0.35 EUR
350+0.2 EUR
500+0.15 EUR
1000+0.13 EUR
3000+0.11 EUR
Mindestbestellmenge: 139
Im Einkaufswagen  Stück im Wert von  UAH
IRLML6244TRPBF irlml6244pbf.pdf
IRLML6244TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.3A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.3A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 8.9nC
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC848BE6327HTSA1 bc847_8_9_bc850.pdf
BC848BE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 2740 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1140+0.064 EUR
1260+0.057 EUR
1420+0.05 EUR
Mindestbestellmenge: 1140
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IRF7342TRPBF irf7342pbf.pdf
IRF7342TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -55V; -3.4A; 2W; SO8
Case: SO8
Mounting: SMD
Power dissipation: 2W
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: P-MOSFET x2
Kind of package: reel
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -3.4A
auf Bestellung 5489 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.77 EUR
61+1.18 EUR
72+1 EUR
100+0.76 EUR
250+0.62 EUR
500+0.53 EUR
1000+0.45 EUR
2000+0.41 EUR
Mindestbestellmenge: 41
Im Einkaufswagen  Stück im Wert von  UAH
IKD04N60RATMA1 IKD04N60R.pdf
IKD04N60RATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 4A
Power dissipation: 75W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 12A
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 317ns
Turn-on time: 22ns
Technology: TRENCHSTOP™ RC
auf Bestellung 2451 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.3 EUR
75+0.96 EUR
106+0.67 EUR
122+0.59 EUR
200+0.57 EUR
Mindestbestellmenge: 55
Im Einkaufswagen  Stück im Wert von  UAH
IKP04N60TXKSA1 IKP04N60T.pdf
IKP04N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 42W; TO220-3
Type of transistor: IGBT
Power dissipation: 42W
Case: TO220-3
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™
Turn-on time: 21ns
Turn-off time: 207ns
Collector current: 4A
Pulsed collector current: 12A
auf Bestellung 336 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
42+1.73 EUR
71+1.02 EUR
83+0.86 EUR
89+0.81 EUR
98+0.73 EUR
103+0.69 EUR
250+0.64 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
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