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BFR92PE6327 BFR92PE6327 INFINEON TECHNOLOGIES BFR92p.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 45mA; 0.28W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 15V
Collector current: 45mA
Power dissipation: 0.28W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 5GHz
auf Bestellung 3134 Stücke:
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218+0.33 EUR
275+0.26 EUR
315+0.23 EUR
365+0.2 EUR
404+0.18 EUR
439+0.16 EUR
477+0.15 EUR
506+0.14 EUR
Mindestbestellmenge: 218 Stücke
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IRFB7540PBF IRFB7540PBF INFINEON TECHNOLOGIES IRFB7540PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 160W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: THT
Gate charge: 88nC
Kind of channel: enhancement
Kind of package: tube
auf Bestellung 149 Stücke:
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36+1.99 EUR
94+0.77 EUR
106+0.68 EUR
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IRFR540ZTRLPBF INFINEON TECHNOLOGIES irfr540zpbf.pdf?fileId=5546d462533600a4015356325b2c2102 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; DPAK
Mounting: SMD
Application: automotive industry
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 35A
Drain-source voltage: 100V
Kind of package: reel; tape
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IRFR7540TRPBF IRFR7540TRPBF INFINEON TECHNOLOGIES IRFR7540TRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 110A
Power dissipation: 140W
Case: DPAK
On-state resistance: 4.8mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
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IRFS7540TRLPBF IRFS7540TRLPBF INFINEON TECHNOLOGIES irfs7540pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 160W; D2PAK; StrongIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 110A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: SMD
Gate charge: 88nC
Kind of channel: enhancement
Trade name: StrongIRFET
Produkt ist nicht verfügbar
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AUIRF7640S2TR AUIRF7640S2TR INFINEON TECHNOLOGIES auirf7640s2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; 30W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 30W
Technology: HEXFET®
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4800 Stücke
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BSC110N06NS3GATMA1 BSC110N06NS3GATMA1 INFINEON TECHNOLOGIES BSC110N06NS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 50W; PG-TDSON-8
Mounting: SMD
On-state resistance: 11mΩ
Drain current: 50A
Gate-source voltage: ±20V
Power dissipation: 50W
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TDSON-8
Polarisation: unipolar
Produkt ist nicht verfügbar
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IRFB4310PBF IRFB4310PBF INFINEON TECHNOLOGIES irfs4310.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 7mΩ
Gate-source voltage: ±20V
Gate charge: 170nC
Technology: HEXFET®
Power dissipation: 330W
auf Bestellung 163 Stücke:
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21+3.42 EUR
40+1.82 EUR
50+1.52 EUR
100+1.49 EUR
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AUIRFN8405TR INFINEON TECHNOLOGIES auirfn8405.pdf?fileId=5546d462533600a4015355b179cb1440 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 95A; PQFN5X6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 95A
Case: PQFN5X6
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 117nC
Kind of channel: enhancement
Technology: HEXFET®
Application: automotive industry
Produkt ist nicht verfügbar
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BTS5030-1EJA BTS5030-1EJA INFINEON TECHNOLOGIES BTS5030-1EJA.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4A; Ch: 1; N-Channel; SMD; PG-DSO-8
Supply voltage: 5...28V DC
Case: PG-DSO-8
Mounting: SMD
Kind of integrated circuit: high-side
Kind of output: N-Channel
Type of integrated circuit: power switch
Technology: PROFET™+ 12V
On-state resistance: 60mΩ
Power dissipation: 1.9W
Number of channels: 1
Output current: 4A
auf Bestellung 611 Stücke:
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22+3.29 EUR
34+2.14 EUR
37+1.94 EUR
100+1.66 EUR
250+1.63 EUR
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IRFB4019PBF IRFB4019PBF INFINEON TECHNOLOGIES irfb4019pbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 17A; 80W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 17A
Power dissipation: 80W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 775 Stücke:
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40+1.79 EUR
52+1.4 EUR
59+1.22 EUR
72+1 EUR
80+0.9 EUR
100+0.87 EUR
500+0.83 EUR
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BFP193E6327 BFP193E6327 INFINEON TECHNOLOGIES BFP193E6327-dte.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 80mA; 0.58W; SOT143
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 80mA
Power dissipation: 0.58W
Case: SOT143
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
Current gain: 70...140
auf Bestellung 1598 Stücke:
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193+0.37 EUR
298+0.24 EUR
391+0.18 EUR
439+0.16 EUR
500+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 193 Stücke
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IRFB4410ZPBF IRFB4410ZPBF INFINEON TECHNOLOGIES irfb4410zpbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 97A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 97A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1641 Stücke:
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35+2.07 EUR
40+1.82 EUR
52+1.39 EUR
58+1.24 EUR
66+1.09 EUR
100+0.97 EUR
200+0.89 EUR
500+0.8 EUR
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IRFB4610PBF IRFB4610PBF INFINEON TECHNOLOGIES irfs4610.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 190W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 73A
Power dissipation: 190W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 830 Stücke:
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28+2.63 EUR
29+2.52 EUR
32+2.26 EUR
34+2.16 EUR
50+2 EUR
100+1.89 EUR
200+1.77 EUR
500+1.63 EUR
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IRFB52N15DPBF IRFB52N15DPBF INFINEON TECHNOLOGIES irfs52n15d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 190 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.53 EUR
35+2.07 EUR
39+1.87 EUR
44+1.63 EUR
50+1.52 EUR
100+1.46 EUR
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IRFB5620PBF IRFB5620PBF INFINEON TECHNOLOGIES irfb5620pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 25A; 144W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 25A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 72.5mΩ
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 124 Stücke:
Lieferzeit 14-21 Tag (e)
36+1.99 EUR
55+1.32 EUR
62+1.16 EUR
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IRFB3307PBF IRFB3307PBF INFINEON TECHNOLOGIES irfs3307.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 250W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 130A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1268 Stücke:
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24+3.03 EUR
26+2.77 EUR
28+2.57 EUR
37+1.94 EUR
44+1.64 EUR
54+1.34 EUR
100+1.26 EUR
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IRFB7730PBF IRFB7730PBF INFINEON TECHNOLOGIES IRFB7730PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 246A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 246A
Power dissipation: 375W
Case: TO220AB
On-state resistance: 2.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 100 Stücke:
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25+2.9 EUR
33+2.19 EUR
50+1.96 EUR
100+1.82 EUR
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IRFB4332PbF IRFB4332PbF INFINEON TECHNOLOGIES irfb4332pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 390W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 99nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 124 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.82 EUR
29+2.47 EUR
33+2.23 EUR
50+2.14 EUR
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IRFB7534PBF IRFB7534PBF INFINEON TECHNOLOGIES irfs7534pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 294W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 294W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 186nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
auf Bestellung 660 Stücke:
Lieferzeit 14-21 Tag (e)
36+2.02 EUR
48+1.52 EUR
57+1.26 EUR
66+1.09 EUR
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IRFB7537PBF IRFB7537PBF INFINEON TECHNOLOGIES irfs7537pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 173A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 173A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
auf Bestellung 984 Stücke:
Lieferzeit 14-21 Tag (e)
27+2.72 EUR
38+1.92 EUR
53+1.37 EUR
74+0.97 EUR
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IRFB3307ZPBF IRFB3307ZPBF INFINEON TECHNOLOGIES irfs3307zpbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 246 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.85 EUR
27+2.7 EUR
47+1.53 EUR
54+1.34 EUR
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IRFB4410PBF IRFB4410PBF INFINEON TECHNOLOGIES irfs4410.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 96A; 250W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 96A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 972 Stücke:
Lieferzeit 14-21 Tag (e)
30+2.45 EUR
36+2.02 EUR
55+1.32 EUR
100+1.04 EUR
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IPB033N10N5LF IPB033N10N5LF INFINEON TECHNOLOGIES IPB033N10N5LF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 108A; 179W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 108A
Case: PG-TO263-3
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 179W
Technology: OptiMOS™ 5
On-state resistance: 3.3mΩ
Produkt ist nicht verfügbar
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TT285N16KOFHPSA2 INFINEON TECHNOLOGIES Infineon-TT285N16KOF-DS-v03_04-EN.pdf?fileId=db3a304412b407950112b42f7b4d4bc5 Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 285A; BG-PB50AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 285A
Case: BG-PB50AT-1
Max. forward voltage: 1.28V
Max. forward impulse current: 10kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IPA60R190P6XKSA1 IPA60R190P6XKSA1 INFINEON TECHNOLOGIES IPA60R190P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 827 Stücke:
Lieferzeit 14-21 Tag (e)
30+2.4 EUR
36+2.03 EUR
50+1.52 EUR
100+1.33 EUR
250+1.19 EUR
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BSS670S2LH6327XTSA1 BSS670S2LH6327XTSA1 INFINEON TECHNOLOGIES BSS670S2LH6327XTSA.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 0.54A; 0.36W; SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Power dissipation: 0.36W
Drain current: 0.54A
On-state resistance: 0.65Ω
Gate-source voltage: ±20V
Drain-source voltage: 55V
auf Bestellung 6103 Stücke:
Lieferzeit 14-21 Tag (e)
239+0.3 EUR
332+0.22 EUR
486+0.15 EUR
573+0.12 EUR
807+0.089 EUR
1000+0.077 EUR
3000+0.063 EUR
6000+0.062 EUR
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BAT6202VH6327XTSA1 BAT6202VH6327XTSA1 INFINEON TECHNOLOGIES BAT62E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 40V; 20mA; 100mW
Type of diode: Schottky switching
Case: SC79
Mounting: SMD
Max. off-state voltage: 40V
Load current: 20mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Power dissipation: 0.1W
auf Bestellung 2596 Stücke:
Lieferzeit 14-21 Tag (e)
143+0.5 EUR
210+0.34 EUR
281+0.25 EUR
317+0.23 EUR
371+0.19 EUR
500+0.17 EUR
1000+0.14 EUR
Mindestbestellmenge: 143 Stücke
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BAT62E6327HTSA1 BAT62E6327HTSA1 INFINEON TECHNOLOGIES BAT62E6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143; SMD; 40V; 20mA; 100mW
Type of diode: Schottky switching
Case: SOT143
Mounting: SMD
Max. off-state voltage: 40V
Load current: 20mA
Semiconductor structure: double independent
Max. forward voltage: 1V
Power dissipation: 0.1W
Produkt ist nicht verfügbar
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FZ1000R33HE3BPSA1 INFINEON TECHNOLOGIES FZ1000R33HE3.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 3.3kV; Ic: 1kA; screw
Case: AG-IHVB130-3
Semiconductor structure: transistor/transistor
Technology: TRENCHSTOP™
Type of semiconductor module: IGBT
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 1kA
Max. off-state voltage: 3.3kV
Pulsed collector current: 2kA
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2 Stücke
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FD1000R33HE3KBPSA1 INFINEON TECHNOLOGIES FD1000R33HE3K.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck-boost chopper; Urmax: 3.3kV
Power dissipation: 11.5kW
Case: AG-IHVB190
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
Application: Inverter
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 1kA
Max. off-state voltage: 3.3kV
Pulsed collector current: 2kA
Topology: buck-boost chopper
Produkt ist nicht verfügbar
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IRF1018EPBF IRF1018EPBF INFINEON TECHNOLOGIES irf1018epbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; 110W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 79A
Power dissipation: 110W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 67 Stücke:
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40+1.79 EUR
59+1.22 EUR
66+1.08 EUR
67+1.07 EUR
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BGA524N6E6327XTSA1 INFINEON TECHNOLOGIES BGA524N6.pdf Category: SMD operational amplifiers
Description: IC: RF amplifier; 1550÷1615MHz; Ch: 1; 1.5÷3.3VDC; TSNP6; reel,tape
Type of integrated circuit: RF amplifier
Bandwidth: 1550...1615MHz
Number of channels: 1
Mounting: SMT
Voltage supply range: 1.5...3.3V DC
Case: TSNP6
Operating temperature: -40...85°C
Integrated circuit features: low noise
Kind of package: reel; tape
Application: global navigation satellite systems (GPS)
Produkt ist nicht verfügbar
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CY8C28452-24PVXI CY8C28452-24PVXI INFINEON TECHNOLOGIES CY8C28243-24PVXI.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP28; 1kBSRAM,16kBFLASH
Interface: GPIO; I2C; SPI; UART
Mounting: SMD
Case: SSOP28
Operating temperature: -40...85°C
Supply voltage: 3...5.25V DC
Number of inputs/outputs: 24
Memory: 1kB SRAM; 16kB FLASH
Clock frequency: 24MHz
Kind of core: 8-bit
Type of integrated circuit: PSoC microcontroller
Produkt ist nicht verfügbar
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IRL40SC209 INFINEON TECHNOLOGIES Infineon-IRL40SC209-DS-v02_00-EN.pdf?fileId=5546d462557e6e890155a1413329602d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 478A; 375W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 478A
Power dissipation: 375W
Case: D2PAK-7
On-state resistance: 600µΩ
Mounting: SMD
Gate charge: 267nC
Kind of channel: enhancement
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ICE3BR4765JGXUMA1 ICE3BR4765JGXUMA1 INFINEON TECHNOLOGIES ICE3BR4765JG.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 2.32A; 65kHz; Ch: 1; PG-DSO-12; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 65kHz
Number of channels: 1
Case: PG-DSO-12
Mounting: SMD
Operating temperature: -40...150°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...80%
Power: 24/16.5W
Application: SMPS
Operating voltage: 10.5...25V DC
Output current: 2.32A
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42+1.73 EUR
45+1.6 EUR
50+1.46 EUR
100+1.36 EUR
500+1.34 EUR
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BSC340N08NS3GATMA1 BSC340N08NS3GATMA1 INFINEON TECHNOLOGIES BSC340N08NS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 23A; 32W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 23A
Power dissipation: 32W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Kind of channel: enhancement
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79+0.92 EUR
108+0.67 EUR
144+0.5 EUR
250+0.45 EUR
500+0.42 EUR
1000+0.38 EUR
2000+0.35 EUR
2500+0.34 EUR
5000+0.31 EUR
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BTS3800SL BTS3800SL INFINEON TECHNOLOGIES BTS3800SL.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.35A; Ch: 1; N-Channel; SMD; PG-SCT595
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 0.35A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-SCT595
On-state resistance: 0.8Ω
Technology: HITFET®
Operating temperature: -40...150°C
Turn-on time: 3µs
Turn-off time: 3µs
auf Bestellung 684 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.79 EUR
67+1.08 EUR
80+0.9 EUR
102+0.7 EUR
250+0.6 EUR
500+0.54 EUR
Mindestbestellmenge: 40 Stücke
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CY8C29566-24AXI CY8C29566-24AXI INFINEON TECHNOLOGIES CY8C29466-24PVXI.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 1kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 40
Supply voltage: 3...5.25V DC
Memory: 1kB SRAM; 32kB FLASH
Clock frequency: 24MHz
Kind of core: 8-bit
Interface: I2C; SPI; UART
Operating temperature: -40...85°C
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CY8C4246LTI-DM405 CY8C4246LTI-DM405 INFINEON TECHNOLOGIES CY8C4245AZI-M443.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; QFN68; 8kBSRAM,64kBFLASH
Type of integrated circuit: PSoC microcontroller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Integrated circuit features: CapSense; LCD controller
Mounting: SMD
Case: QFN68
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 55
Memory: 8kB SRAM; 64kB FLASH
Kind of core: 32-bit
Clock frequency: 48MHz
Produkt ist nicht verfügbar
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CY8C3866AXI-040 CY8C3866AXI-040 INFINEON TECHNOLOGIES Infineon-PSoC_3_CY8C38_Programmable_System-on-Chip-DataSheet-v34_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec70ebd3dce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 67MHz; TQFP100; 8kBSRAM,64kBFLASH
Type of integrated circuit: PSoC microcontroller
Case: TQFP100
Mounting: SMD
Clock frequency: 67MHz
Interface: GPIO; I2C; SPI; UART; USB
Integrated circuit features: watchdog
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 72
Memory: 8kB SRAM; 64kB FLASH
Kind of core: 8-bit
Produkt ist nicht verfügbar
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CY8C4126LTI-M445 CY8C4126LTI-M445 INFINEON TECHNOLOGIES CY8C4125AZI-M443.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; QFN68; 8kBSRAM,64kBFLASH
Operating temperature: -40...85°C
Type of integrated circuit: PSoC microcontroller
Case: QFN68
Integrated circuit features: CapSense; LCD controller
Mounting: SMD
Kind of core: 32-bit
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 55
Memory: 8kB SRAM; 64kB FLASH
Clock frequency: 24MHz
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Produkt ist nicht verfügbar
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CY8C5868AXI-LP032 CY8C5868AXI-LP032 INFINEON TECHNOLOGIES infineon-psoc-5lp-cy8c58lp-datasheet-datasheet-en.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 67MHz; TQFP100; 64kBSRAM,256kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP100
Number of inputs/outputs: 72
Supply voltage: 1.71...5.5V DC
Operating temperature: -40...85°C
Kind of core: 32-bit
Interface: GPIO; I2C; SPI; UART; USB
Integrated circuit features: watchdog
Memory: 64kB SRAM; 256kB FLASH
Clock frequency: 67MHz
Produkt ist nicht verfügbar
 Mindestbestellmenge: 90 Stücke
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CY8C5868AXI-LP035 CY8C5868AXI-LP035 INFINEON TECHNOLOGIES infineon-psoc-5lp-cy8c58lp-datasheet-datasheet-en.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 67MHz; TQFP100; 64kBSRAM,256kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP100
Number of inputs/outputs: 72
Supply voltage: 1.71...5.5V DC
Operating temperature: -40...85°C
Kind of core: 32-bit
Interface: GPIO; I2C; SPI; UART; USB
Integrated circuit features: watchdog
Memory: 64kB SRAM; 256kB FLASH
Clock frequency: 67MHz
Produkt ist nicht verfügbar
 Mindestbestellmenge: 90 Stücke
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BAS21E6327HTSA1 BAS21E6327HTSA1 INFINEON TECHNOLOGIES BAS2103WE6327HTSA1.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.25A; 50ns; SOT23; Ufmax: 1.25V; 350mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Power dissipation: 0.35W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 386 Stücke:
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334+0.21 EUR
363+0.2 EUR
386+0.19 EUR
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BSC014N04LSIATMA1 BSC014N04LSIATMA1 INFINEON TECHNOLOGIES BSC014N04LSI-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8
On-state resistance: 1.4mΩ
Power dissipation: 96W
Gate-source voltage: ±20V
Drain current: 100A
Drain-source voltage: 40V
Case: PG-TDSON-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
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BFP183E7764HTSA1 INFINEON TECHNOLOGIES Infineon-BFP183-DS-v01_01-EN.pdf?fileId=5546d462677d0f460167c628925b4907 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 65mA; 250mW; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 65mA
Power dissipation: 0.25W
Current gain: 70
Mounting: SMD
Frequency: 8GHz
Application: automotive industry
Produkt ist nicht verfügbar
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IRFP7430PBF IRFP7430PBF INFINEON TECHNOLOGIES IRFP7430PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 404A; 366W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 404A
Power dissipation: 366W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
auf Bestellung 382 Stücke:
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20+3.68 EUR
30+2.43 EUR
39+1.87 EUR
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IRFS7434TRLPBF INFINEON TECHNOLOGIES irfs7434pbf.pdf?fileId=5546d462533600a40153563a730021cc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 320A; 294W; D2PAK,TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 320A
Power dissipation: 294W
Case: D2PAK; TO263AB
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 216nC
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRFS7530TRL7PP IRFS7530TRL7PP INFINEON TECHNOLOGIES irfs7530-7ppbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 240A; 375W; D2PAK-7
Case: D2PAK-7
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 236nC
On-state resistance: 1.4mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 240A
Power dissipation: 375W
auf Bestellung 365 Stücke:
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16+4.56 EUR
24+3.07 EUR
27+2.7 EUR
100+2.25 EUR
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BSS139H6327XTSA1 BSS139H6327XTSA1 INFINEON TECHNOLOGIES BSS139H6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.1A; 0.36W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain current: 0.1A
Power dissipation: 0.36W
On-state resistance: 30Ω
Gate-source voltage: ±20V
Drain-source voltage: 250V
Kind of channel: depletion
auf Bestellung 4457 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.47 EUR
204+0.35 EUR
315+0.23 EUR
368+0.19 EUR
500+0.17 EUR
1000+0.16 EUR
3000+0.14 EUR
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IPA60R190C6XKSA1 IPA60R190C6XKSA1 INFINEON TECHNOLOGIES IPA60R190C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 26 Stücke:
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26+2.75 EUR
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IRF7313TRPBF IRF7313TRPBF INFINEON TECHNOLOGIES irf7313pbf.pdf description Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 6.5A; 2W; SO8
Power dissipation: 2W
Kind of package: reel
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain current: 6.5A
Drain-source voltage: 30V
auf Bestellung 3376 Stücke:
Lieferzeit 14-21 Tag (e)
65+1.1 EUR
113+0.64 EUR
140+0.51 EUR
250+0.48 EUR
500+0.47 EUR
1000+0.45 EUR
2000+0.43 EUR
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IRF7313TRPBFXTMA1 INFINEON TECHNOLOGIES irf7313pbf.pdf?fileId=5546d462533600a4015355f560f81b26 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.5A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.5A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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XMC4502F100F768ACXQMA1 XMC4502F100F768ACXQMA1 INFINEON TECHNOLOGIES XMC4500-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Interface: CAN x3; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Case: PG-LQFP-100
Family: XMC4500
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Memory: 160kB SRAM; 768kB FLASH
Kind of core: 32-bit
Type of integrated circuit: ARM microcontroller
Produkt ist nicht verfügbar
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XMC4502F100K768ACXQMA1 XMC4502F100K768ACXQMA1 INFINEON TECHNOLOGIES XMC4500-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Interface: CAN x3; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Case: PG-LQFP-100
Family: XMC4500
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Memory: 160kB SRAM; 768kB FLASH
Kind of core: 32-bit
Type of integrated circuit: ARM microcontroller
Produkt ist nicht verfügbar
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CY7C65213A-28PVXIT INFINEON TECHNOLOGIES Infineon-CY7C65213.pdf Category: USB interfaces - integrated circuits
Description: IC: interface; GPIO x8,UART; USB controller; Full Speed; SSOP28
Interface: GPIO x8; UART
Case: SSOP28
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Data transfer rate: 12Mbps
Integrated circuit features: bridge
USB speed: Full Speed
Kind of integrated circuit: USB controller
Type of integrated circuit: interface
Produkt ist nicht verfügbar
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CY7C65213A-32LTXIT INFINEON TECHNOLOGIES Infineon-CY7C65213.pdf Category: USB interfaces - integrated circuits
Description: IC: interface; GPIO x8,UART; USB controller; Full Speed; QFN32
Interface: GPIO x8; UART
Case: QFN32
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Data transfer rate: 12Mbps
Integrated circuit features: bridge
USB speed: Full Speed
Kind of integrated circuit: USB controller
Type of integrated circuit: interface
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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S25FL064LABMFA010 INFINEON TECHNOLOGIES infineon-s25fl064l-64-mbit-8-mbyte-3-datasheet-en.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
 Mindestbestellmenge: 280 Stücke
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S25FL064LABMFA011 INFINEON TECHNOLOGIES infineon-s25fl064l-64-mbit-8-mbyte-3-datasheet-en.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Application: automotive
Produkt ist nicht verfügbar
 Mindestbestellmenge: 91 Stücke
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BFR92PE6327 BFR92p.pdf
BFR92PE6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 45mA; 0.28W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 15V
Collector current: 45mA
Power dissipation: 0.28W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 5GHz
auf Bestellung 3134 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
218+0.33 EUR
275+0.26 EUR
315+0.23 EUR
365+0.2 EUR
404+0.18 EUR
439+0.16 EUR
477+0.15 EUR
506+0.14 EUR
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IRFB7540PBF IRFB7540PBF.pdf
IRFB7540PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 160W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: THT
Gate charge: 88nC
Kind of channel: enhancement
Kind of package: tube
auf Bestellung 149 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
36+1.99 EUR
94+0.77 EUR
106+0.68 EUR
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IRFR540ZTRLPBF irfr540zpbf.pdf?fileId=5546d462533600a4015356325b2c2102
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; DPAK
Mounting: SMD
Application: automotive industry
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 35A
Drain-source voltage: 100V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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IRFR7540TRPBF IRFR7540TRPBF.pdf
IRFR7540TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 110A
Power dissipation: 140W
Case: DPAK
On-state resistance: 4.8mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
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IRFS7540TRLPBF irfs7540pbf.pdf
IRFS7540TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 160W; D2PAK; StrongIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 110A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: SMD
Gate charge: 88nC
Kind of channel: enhancement
Trade name: StrongIRFET
Produkt ist nicht verfügbar
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AUIRF7640S2TR auirf7640s2.pdf
AUIRF7640S2TR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; 30W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 30W
Technology: HEXFET®
Produkt ist nicht verfügbar
Mindestbestellmenge: 4800 Stücke
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BSC110N06NS3GATMA1 BSC110N06NS3G-DTE.pdf
BSC110N06NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 50W; PG-TDSON-8
Mounting: SMD
On-state resistance: 11mΩ
Drain current: 50A
Gate-source voltage: ±20V
Power dissipation: 50W
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Case: PG-TDSON-8
Polarisation: unipolar
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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IRFB4310PBF irfs4310.pdf
IRFB4310PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 7mΩ
Gate-source voltage: ±20V
Gate charge: 170nC
Technology: HEXFET®
Power dissipation: 330W
auf Bestellung 163 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
21+3.42 EUR
40+1.82 EUR
50+1.52 EUR
100+1.49 EUR
Mindestbestellmenge: 21 Stücke
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AUIRFN8405TR auirfn8405.pdf?fileId=5546d462533600a4015355b179cb1440
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 95A; PQFN5X6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 95A
Case: PQFN5X6
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 117nC
Kind of channel: enhancement
Technology: HEXFET®
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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BTS5030-1EJA BTS5030-1EJA.pdf
BTS5030-1EJA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4A; Ch: 1; N-Channel; SMD; PG-DSO-8
Supply voltage: 5...28V DC
Case: PG-DSO-8
Mounting: SMD
Kind of integrated circuit: high-side
Kind of output: N-Channel
Type of integrated circuit: power switch
Technology: PROFET™+ 12V
On-state resistance: 60mΩ
Power dissipation: 1.9W
Number of channels: 1
Output current: 4A
auf Bestellung 611 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
22+3.29 EUR
34+2.14 EUR
37+1.94 EUR
100+1.66 EUR
250+1.63 EUR
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IRFB4019PBF description irfb4019pbf.pdf
IRFB4019PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 17A; 80W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 17A
Power dissipation: 80W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 775 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
40+1.79 EUR
52+1.4 EUR
59+1.22 EUR
72+1 EUR
80+0.9 EUR
100+0.87 EUR
500+0.83 EUR
Mindestbestellmenge: 40 Stücke
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BFP193E6327 BFP193E6327-dte.pdf
BFP193E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 80mA; 0.58W; SOT143
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 80mA
Power dissipation: 0.58W
Case: SOT143
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
Current gain: 70...140
auf Bestellung 1598 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
193+0.37 EUR
298+0.24 EUR
391+0.18 EUR
439+0.16 EUR
500+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 193 Stücke
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IRFB4410ZPBF description irfb4410zpbf.pdf
IRFB4410ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 97A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 97A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1641 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
35+2.07 EUR
40+1.82 EUR
52+1.39 EUR
58+1.24 EUR
66+1.09 EUR
100+0.97 EUR
200+0.89 EUR
500+0.8 EUR
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IRFB4610PBF description irfs4610.pdf
IRFB4610PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 73A; 190W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 73A
Power dissipation: 190W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 830 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
28+2.63 EUR
29+2.52 EUR
32+2.26 EUR
34+2.16 EUR
50+2 EUR
100+1.89 EUR
200+1.77 EUR
500+1.63 EUR
Mindestbestellmenge: 28 Stücke
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IRFB52N15DPBF irfs52n15d.pdf
IRFB52N15DPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 60A; 320W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 190 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
29+2.53 EUR
35+2.07 EUR
39+1.87 EUR
44+1.63 EUR
50+1.52 EUR
100+1.46 EUR
Mindestbestellmenge: 29 Stücke
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IRFB5620PBF irfb5620pbf.pdf
IRFB5620PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 25A; 144W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 25A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 72.5mΩ
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 124 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
36+1.99 EUR
55+1.32 EUR
62+1.16 EUR
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IRFB3307PBF irfs3307.pdf
IRFB3307PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 250W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 130A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1268 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
24+3.03 EUR
26+2.77 EUR
28+2.57 EUR
37+1.94 EUR
44+1.64 EUR
54+1.34 EUR
100+1.26 EUR
Mindestbestellmenge: 24 Stücke
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IRFB7730PBF IRFB7730PBF.pdf
IRFB7730PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 246A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 246A
Power dissipation: 375W
Case: TO220AB
On-state resistance: 2.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
25+2.9 EUR
33+2.19 EUR
50+1.96 EUR
100+1.82 EUR
Mindestbestellmenge: 25 Stücke
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IRFB4332PbF irfb4332pbf.pdf
IRFB4332PbF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 390W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 99nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 124 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
26+2.82 EUR
29+2.47 EUR
33+2.23 EUR
50+2.14 EUR
Mindestbestellmenge: 26 Stücke
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IRFB7534PBF irfs7534pbf.pdf
IRFB7534PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 294W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 294W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 186nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
auf Bestellung 660 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
36+2.02 EUR
48+1.52 EUR
57+1.26 EUR
66+1.09 EUR
Mindestbestellmenge: 36 Stücke
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IRFB7537PBF irfs7537pbf.pdf
IRFB7537PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 173A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 173A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
Trade name: StrongIRFET
auf Bestellung 984 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
27+2.72 EUR
38+1.92 EUR
53+1.37 EUR
74+0.97 EUR
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IRFB3307ZPBF irfs3307zpbf.pdf
IRFB3307ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 120A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 246 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
26+2.85 EUR
27+2.7 EUR
47+1.53 EUR
54+1.34 EUR
Mindestbestellmenge: 26 Stücke
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IRFB4410PBF description irfs4410.pdf
IRFB4410PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 96A; 250W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 96A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 972 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
30+2.45 EUR
36+2.02 EUR
55+1.32 EUR
100+1.04 EUR
Mindestbestellmenge: 30 Stücke
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IPB033N10N5LF IPB033N10N5LF.pdf
IPB033N10N5LF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 108A; 179W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 108A
Case: PG-TO263-3
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 179W
Technology: OptiMOS™ 5
On-state resistance: 3.3mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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TT285N16KOFHPSA2 Infineon-TT285N16KOF-DS-v03_04-EN.pdf?fileId=db3a304412b407950112b42f7b4d4bc5
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 285A; BG-PB50AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 285A
Case: BG-PB50AT-1
Max. forward voltage: 1.28V
Max. forward impulse current: 10kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IPA60R190P6XKSA1 IPA60R190P6-DTE.pdf
IPA60R190P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 827 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
30+2.4 EUR
36+2.03 EUR
50+1.52 EUR
100+1.33 EUR
250+1.19 EUR
Mindestbestellmenge: 30 Stücke
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BSS670S2LH6327XTSA1 BSS670S2LH6327XTSA.pdf
BSS670S2LH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 0.54A; 0.36W; SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Power dissipation: 0.36W
Drain current: 0.54A
On-state resistance: 0.65Ω
Gate-source voltage: ±20V
Drain-source voltage: 55V
auf Bestellung 6103 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
239+0.3 EUR
332+0.22 EUR
486+0.15 EUR
573+0.12 EUR
807+0.089 EUR
1000+0.077 EUR
3000+0.063 EUR
6000+0.062 EUR
Mindestbestellmenge: 239 Stücke
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BAT6202VH6327XTSA1 BAT62E6327HTSA1.pdf
BAT6202VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 40V; 20mA; 100mW
Type of diode: Schottky switching
Case: SC79
Mounting: SMD
Max. off-state voltage: 40V
Load current: 20mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Power dissipation: 0.1W
auf Bestellung 2596 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
143+0.5 EUR
210+0.34 EUR
281+0.25 EUR
317+0.23 EUR
371+0.19 EUR
500+0.17 EUR
1000+0.14 EUR
Mindestbestellmenge: 143 Stücke
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BAT62E6327HTSA1 BAT62E6327HTSA1.pdf
BAT62E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143; SMD; 40V; 20mA; 100mW
Type of diode: Schottky switching
Case: SOT143
Mounting: SMD
Max. off-state voltage: 40V
Load current: 20mA
Semiconductor structure: double independent
Max. forward voltage: 1V
Power dissipation: 0.1W
Produkt ist nicht verfügbar
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FZ1000R33HE3BPSA1 FZ1000R33HE3.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 3.3kV; Ic: 1kA; screw
Case: AG-IHVB130-3
Semiconductor structure: transistor/transistor
Technology: TRENCHSTOP™
Type of semiconductor module: IGBT
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 1kA
Max. off-state voltage: 3.3kV
Pulsed collector current: 2kA
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
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FD1000R33HE3KBPSA1 FD1000R33HE3K.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck-boost chopper; Urmax: 3.3kV
Power dissipation: 11.5kW
Case: AG-IHVB190
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
Application: Inverter
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 1kA
Max. off-state voltage: 3.3kV
Pulsed collector current: 2kA
Topology: buck-boost chopper
Produkt ist nicht verfügbar
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IRF1018EPBF description irf1018epbf.pdf
IRF1018EPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 79A; 110W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 79A
Power dissipation: 110W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.4mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
40+1.79 EUR
59+1.22 EUR
66+1.08 EUR
67+1.07 EUR
Mindestbestellmenge: 40 Stücke
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BGA524N6E6327XTSA1 BGA524N6.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD operational amplifiers
Description: IC: RF amplifier; 1550÷1615MHz; Ch: 1; 1.5÷3.3VDC; TSNP6; reel,tape
Type of integrated circuit: RF amplifier
Bandwidth: 1550...1615MHz
Number of channels: 1
Mounting: SMT
Voltage supply range: 1.5...3.3V DC
Case: TSNP6
Operating temperature: -40...85°C
Integrated circuit features: low noise
Kind of package: reel; tape
Application: global navigation satellite systems (GPS)
Produkt ist nicht verfügbar
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CY8C28452-24PVXI CY8C28243-24PVXI.pdf
CY8C28452-24PVXI
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP28; 1kBSRAM,16kBFLASH
Interface: GPIO; I2C; SPI; UART
Mounting: SMD
Case: SSOP28
Operating temperature: -40...85°C
Supply voltage: 3...5.25V DC
Number of inputs/outputs: 24
Memory: 1kB SRAM; 16kB FLASH
Clock frequency: 24MHz
Kind of core: 8-bit
Type of integrated circuit: PSoC microcontroller
Produkt ist nicht verfügbar
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IRL40SC209 Infineon-IRL40SC209-DS-v02_00-EN.pdf?fileId=5546d462557e6e890155a1413329602d
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 478A; 375W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 478A
Power dissipation: 375W
Case: D2PAK-7
On-state resistance: 600µΩ
Mounting: SMD
Gate charge: 267nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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ICE3BR4765JGXUMA1 ICE3BR4765JG.pdf
ICE3BR4765JGXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 2.32A; 65kHz; Ch: 1; PG-DSO-12; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 65kHz
Number of channels: 1
Case: PG-DSO-12
Mounting: SMD
Operating temperature: -40...150°C
Topology: flyback
Input voltage: 80...265V
Breakdown voltage: 650V
Duty cycle factor: 0...80%
Power: 24/16.5W
Application: SMPS
Operating voltage: 10.5...25V DC
Output current: 2.32A
auf Bestellung 2537 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
42+1.73 EUR
45+1.6 EUR
50+1.46 EUR
100+1.36 EUR
500+1.34 EUR
Mindestbestellmenge: 42 Stücke
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BSC340N08NS3GATMA1 BSC340N08NS3G-DTE.pdf
BSC340N08NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 23A; 32W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 23A
Power dissipation: 32W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 5569 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
79+0.92 EUR
108+0.67 EUR
144+0.5 EUR
250+0.45 EUR
500+0.42 EUR
1000+0.38 EUR
2000+0.35 EUR
2500+0.34 EUR
5000+0.31 EUR
Mindestbestellmenge: 79 Stücke
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BTS3800SL BTS3800SL.pdf
BTS3800SL
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.35A; Ch: 1; N-Channel; SMD; PG-SCT595
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 0.35A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-SCT595
On-state resistance: 0.8Ω
Technology: HITFET®
Operating temperature: -40...150°C
Turn-on time: 3µs
Turn-off time: 3µs
auf Bestellung 684 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
40+1.79 EUR
67+1.08 EUR
80+0.9 EUR
102+0.7 EUR
250+0.6 EUR
500+0.54 EUR
Mindestbestellmenge: 40 Stücke
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CY8C29566-24AXI CY8C29466-24PVXI.pdf
CY8C29566-24AXI
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 1kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 40
Supply voltage: 3...5.25V DC
Memory: 1kB SRAM; 32kB FLASH
Clock frequency: 24MHz
Kind of core: 8-bit
Interface: I2C; SPI; UART
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CY8C4246LTI-DM405 CY8C4245AZI-M443.pdf
CY8C4246LTI-DM405
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; QFN68; 8kBSRAM,64kBFLASH
Type of integrated circuit: PSoC microcontroller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Integrated circuit features: CapSense; LCD controller
Mounting: SMD
Case: QFN68
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 55
Memory: 8kB SRAM; 64kB FLASH
Kind of core: 32-bit
Clock frequency: 48MHz
Produkt ist nicht verfügbar
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CY8C3866AXI-040 Infineon-PSoC_3_CY8C38_Programmable_System-on-Chip-DataSheet-v34_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec70ebd3dce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C3866AXI-040
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 67MHz; TQFP100; 8kBSRAM,64kBFLASH
Type of integrated circuit: PSoC microcontroller
Case: TQFP100
Mounting: SMD
Clock frequency: 67MHz
Interface: GPIO; I2C; SPI; UART; USB
Integrated circuit features: watchdog
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 72
Memory: 8kB SRAM; 64kB FLASH
Kind of core: 8-bit
Produkt ist nicht verfügbar
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CY8C4126LTI-M445 CY8C4125AZI-M443.pdf
CY8C4126LTI-M445
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; QFN68; 8kBSRAM,64kBFLASH
Operating temperature: -40...85°C
Type of integrated circuit: PSoC microcontroller
Case: QFN68
Integrated circuit features: CapSense; LCD controller
Mounting: SMD
Kind of core: 32-bit
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 55
Memory: 8kB SRAM; 64kB FLASH
Clock frequency: 24MHz
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Produkt ist nicht verfügbar
Mindestbestellmenge: 2600 Stücke
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CY8C5868AXI-LP032 infineon-psoc-5lp-cy8c58lp-datasheet-datasheet-en.pdf
CY8C5868AXI-LP032
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 67MHz; TQFP100; 64kBSRAM,256kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP100
Number of inputs/outputs: 72
Supply voltage: 1.71...5.5V DC
Operating temperature: -40...85°C
Kind of core: 32-bit
Interface: GPIO; I2C; SPI; UART; USB
Integrated circuit features: watchdog
Memory: 64kB SRAM; 256kB FLASH
Clock frequency: 67MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 90 Stücke
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CY8C5868AXI-LP035 infineon-psoc-5lp-cy8c58lp-datasheet-datasheet-en.pdf
CY8C5868AXI-LP035
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 67MHz; TQFP100; 64kBSRAM,256kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP100
Number of inputs/outputs: 72
Supply voltage: 1.71...5.5V DC
Operating temperature: -40...85°C
Kind of core: 32-bit
Interface: GPIO; I2C; SPI; UART; USB
Integrated circuit features: watchdog
Memory: 64kB SRAM; 256kB FLASH
Clock frequency: 67MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 90 Stücke
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BAS21E6327HTSA1 BAS2103WE6327HTSA1.pdf
BAS21E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.25A; 50ns; SOT23; Ufmax: 1.25V; 350mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.25A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Power dissipation: 0.35W
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
auf Bestellung 386 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
334+0.21 EUR
363+0.2 EUR
386+0.19 EUR
Mindestbestellmenge: 334 Stücke
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BSC014N04LSIATMA1 BSC014N04LSI-DTE.pdf
BSC014N04LSIATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 96W; PG-TDSON-8
On-state resistance: 1.4mΩ
Power dissipation: 96W
Gate-source voltage: ±20V
Drain current: 100A
Drain-source voltage: 40V
Case: PG-TDSON-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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BFP183E7764HTSA1 Infineon-BFP183-DS-v01_01-EN.pdf?fileId=5546d462677d0f460167c628925b4907
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 65mA; 250mW; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 65mA
Power dissipation: 0.25W
Current gain: 70
Mounting: SMD
Frequency: 8GHz
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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IRFP7430PBF IRFP7430PBF.pdf
IRFP7430PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 404A; 366W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 404A
Power dissipation: 366W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
auf Bestellung 382 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
20+3.68 EUR
30+2.43 EUR
39+1.87 EUR
Mindestbestellmenge: 20 Stücke
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IRFS7434TRLPBF irfs7434pbf.pdf?fileId=5546d462533600a40153563a730021cc
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 320A; 294W; D2PAK,TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 320A
Power dissipation: 294W
Case: D2PAK; TO263AB
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 216nC
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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IRFS7530TRL7PP irfs7530-7ppbf.pdf
IRFS7530TRL7PP
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 240A; 375W; D2PAK-7
Case: D2PAK-7
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 236nC
On-state resistance: 1.4mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 240A
Power dissipation: 375W
auf Bestellung 365 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
16+4.56 EUR
24+3.07 EUR
27+2.7 EUR
100+2.25 EUR
Mindestbestellmenge: 16 Stücke
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BSS139H6327XTSA1 BSS139H6327XTSA1.pdf
BSS139H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.1A; 0.36W; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain current: 0.1A
Power dissipation: 0.36W
On-state resistance: 30Ω
Gate-source voltage: ±20V
Drain-source voltage: 250V
Kind of channel: depletion
auf Bestellung 4457 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
152+0.47 EUR
204+0.35 EUR
315+0.23 EUR
368+0.19 EUR
500+0.17 EUR
1000+0.16 EUR
3000+0.14 EUR
Mindestbestellmenge: 152 Stücke
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IPA60R190C6XKSA1 IPA60R190C6-DTE.pdf
IPA60R190C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
26+2.75 EUR
Mindestbestellmenge: 26 Stücke
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IRF7313TRPBF description irf7313pbf.pdf
IRF7313TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 6.5A; 2W; SO8
Power dissipation: 2W
Kind of package: reel
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain current: 6.5A
Drain-source voltage: 30V
auf Bestellung 3376 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
65+1.1 EUR
113+0.64 EUR
140+0.51 EUR
250+0.48 EUR
500+0.47 EUR
1000+0.45 EUR
2000+0.43 EUR
Mindestbestellmenge: 65 Stücke
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IRF7313TRPBFXTMA1 irf7313pbf.pdf?fileId=5546d462533600a4015355f560f81b26
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.5A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.5A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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XMC4502F100F768ACXQMA1 XMC4500-DTE.pdf
XMC4502F100F768ACXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Interface: CAN x3; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Case: PG-LQFP-100
Family: XMC4500
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Memory: 160kB SRAM; 768kB FLASH
Kind of core: 32-bit
Type of integrated circuit: ARM microcontroller
Produkt ist nicht verfügbar
Mindestbestellmenge: 160 Stücke
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XMC4502F100K768ACXQMA1 XMC4500-DTE.pdf
XMC4502F100K768ACXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Interface: CAN x3; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Case: PG-LQFP-100
Family: XMC4500
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Memory: 160kB SRAM; 768kB FLASH
Kind of core: 32-bit
Type of integrated circuit: ARM microcontroller
Produkt ist nicht verfügbar
Mindestbestellmenge: 540 Stücke
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CY7C65213A-28PVXIT Infineon-CY7C65213.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: interface; GPIO x8,UART; USB controller; Full Speed; SSOP28
Interface: GPIO x8; UART
Case: SSOP28
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Data transfer rate: 12Mbps
Integrated circuit features: bridge
USB speed: Full Speed
Kind of integrated circuit: USB controller
Type of integrated circuit: interface
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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CY7C65213A-32LTXIT Infineon-CY7C65213.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: interface; GPIO x8,UART; USB controller; Full Speed; QFN32
Interface: GPIO x8; UART
Case: QFN32
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Data transfer rate: 12Mbps
Integrated circuit features: bridge
USB speed: Full Speed
Kind of integrated circuit: USB controller
Type of integrated circuit: interface
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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S25FL064LABMFA010 infineon-s25fl064l-64-mbit-8-mbyte-3-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 280 Stücke
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S25FL064LABMFA011 infineon-s25fl064l-64-mbit-8-mbyte-3-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Application: automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 91 Stücke
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