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AIHD04N60RATMA1 AIHD04N60RATMA1 INFINEON TECHNOLOGIES AIHD04N60R.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 27nC
Turn-on time: 22ns
Turn-off time: 317ns
Collector current: 4A
Pulsed collector current: 12A
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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AIHD04N60RFATMA1 AIHD04N60RFATMA1 INFINEON TECHNOLOGIES AIHD04N60RF.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 27nC
Turn-on time: 19ns
Turn-off time: 153ns
Collector current: 4A
Pulsed collector current: 12A
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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IPC90N04S5-3R6 IPC90N04S5-3R6 INFINEON TECHNOLOGIES Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 63W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Kind of channel: enhancement
Drain current: 90A
Power dissipation: 63W
Technology: OptiMOS™ 5
Gate charge: 32.6nC
Produkt ist nicht verfügbar
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IPC90N04S5L-3R3 IPC90N04S5L-3R3 INFINEON TECHNOLOGIES Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 62W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 3.3mΩ
Mounting: SMD
Kind of channel: enhancement
Drain current: 90A
Power dissipation: 62W
Technology: OptiMOS™ 5
Gate charge: 40nC
Produkt ist nicht verfügbar
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IPB90N04S402ATMA1 INFINEON TECHNOLOGIES Infineon-IPP_B_I90N04S4_02-DS-v01_01-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c7efe515e2f&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 150W; D2PAK,TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: D2PAK; TO263AB
Mounting: SMD
Kind of channel: enhancement
Drain current: 90A
Power dissipation: 150W
Application: automotive industry
Gate charge: 118nC
Produkt ist nicht verfügbar
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IPD90N04S304ATMA1 IPD90N04S304ATMA1 INFINEON TECHNOLOGIES IPD90N04S304.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 90A; 136W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Kind of channel: enhancement
Drain current: 90A
Power dissipation: 136W
Technology: OptiMOS™ T
Gate charge: 60nC
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IPB90N04S402ATMA1 INFINEON TECHNOLOGIES Infineon-IPP_B_I90N04S4_02-DS-v01_01-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c7efe515e2f&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 40V; 90A; 150W; D2PAK,TO263AB
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Case: D2PAK; TO263AB
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Drain current: 90A
Power dissipation: 150W
Application: automotive industry
Technology: MOSFET
Gate charge: 118nC
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BSC0902NSIATMA1 BSC0902NSIATMA1 INFINEON TECHNOLOGIES BSC0902NSI-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 89A; 48W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 89A
Power dissipation: 48W
Case: PG-TDSON-8
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Gate-source voltage: ±20V
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91+0.79 EUR
101+0.71 EUR
104+0.69 EUR
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BSC0909NSATMA1 BSC0909NSATMA1 INFINEON TECHNOLOGIES BSC0909NS-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 34V; 44A; 27W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 34V
Drain current: 44A
Power dissipation: 27W
Case: PG-TDSON-8
On-state resistance: 9.2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Gate-source voltage: ±20V
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BSC030P03NS3GAUMA1 BSC030P03NS3GAUMA1 INFINEON TECHNOLOGIES BSC030P03NS3GAUMA1-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100A; 125W; PG-TDSON-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±25V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ P3
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33+2.23 EUR
37+1.94 EUR
45+1.62 EUR
51+1.42 EUR
100+1.24 EUR
250+1.1 EUR
500+1 EUR
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BSC035N10NS5ATMA1 BSC035N10NS5ATMA1 INFINEON TECHNOLOGIES BSC035N10NS5-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
On-state resistance: 3.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
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BSC028N06NSATMA1 BSC028N06NSATMA1 INFINEON TECHNOLOGIES BSC028N06NS-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 83W
Case: PG-TDSON-8
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Gate-source voltage: ±20V
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100+1.52 EUR
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BSC093N04LSGATMA1 BSC093N04LSGATMA1 INFINEON TECHNOLOGIES BSC093N04LSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 35W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 35W
Case: PG-TDSON-8
On-state resistance: 9.3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Gate-source voltage: ±20V
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BSC0502NSIATMA1 INFINEON TECHNOLOGIES Infineon-BSC0502NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014efe055d2f662a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Case: PG-TDSON-8
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
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ISZ065N03L5SATMA1 INFINEON TECHNOLOGIES Infineon-ISZ065N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8cb687b0994 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Case: PG-TDSON-8 FL
On-state resistance: 8.6mΩ
Mounting: SMD
Gate charge: 10nC
Kind of channel: enhancement
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ISZ019N03L5SATMA1 INFINEON TECHNOLOGIES Infineon-ISZ019N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8c249de0991 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Case: PG-TDSON-8
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhancement
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BSZ065N06LS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSZ065N06LS5-DS-v02_02-EN.pdf?fileId=5546d4625696ed760156e55f60164817 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 46W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Power dissipation: 46W
Case: PG-TDSON-8
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
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BSZ040N06LS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSZ040N06LS5-DS-v02_01-EN.pdf?fileId=5546d4625696ed760156e53aa56447aa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 69W; PG-TDSON-8
Case: PG-TDSON-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 6.6nC
On-state resistance: 4.4mΩ
Drain current: 40A
Power dissipation: 69W
Drain-source voltage: 60V
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BSZ033NE2LS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSZ033NE2LS5-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014f1820c4931820 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 18A; 30W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 18A
Power dissipation: 30W
Case: PG-TDSON-8
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 18.3nC
Kind of channel: enhancement
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BSZ070N08LS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSZ070N08LS5-DS-v02_02-EN.pdf?fileId=5546d4625696ed760156e60d9bc9507d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Power dissipation: 69W
Case: PG-TDSON-8
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 14.1nC
Kind of channel: enhancement
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ISC230N10NM6ATMA1 INFINEON TECHNOLOGIES Infineon-ISC230N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bba4e6aba024a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; 48W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Power dissipation: 48W
Case: PG-TDSON-8
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 7.4nC
Kind of channel: enhancement
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BSC065N06LS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSC065N06LS5-DS-v02_00-EN.pdf?fileId=5546d4625c54d85b015cc5a9ad087b39 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 64A; 46W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 64A
Power dissipation: 46W
Case: PG-TDSON-8
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
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ISC011N06LM5ATMA1 INFINEON TECHNOLOGIES Infineon-ISC011N06LM5-DataSheet-v02_01-EN.pdf?fileId=5546d4627956d53f01795f5741e469ea Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 288A; 188W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 288A
Power dissipation: 188W
Case: PG-TDSON-8
On-state resistance: 1.15mΩ
Mounting: SMD
Gate charge: 63nC
Kind of channel: enhancement
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ISC0805NLSATMA1 INFINEON TECHNOLOGIES Infineon-ISC0805NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd5077b86d89 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 71A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 71A
Power dissipation: 74W
Case: PG-TDSON-8
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of channel: enhancement
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BSC034N10LS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSC034N10LS5-DataSheet-v02_01-EN.pdf?fileId=5546d4626b2d8e69016b4c46675313e7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 46nC
Kind of channel: enhancement
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IPG20N06S4L26ATMA1 INFINEON TECHNOLOGIES Infineon-IPG20N06S4L_26-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf68dd216c28&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 33W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 33W
Case: PG-TDSON-8
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 20nC
Kind of channel: enhancement
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BSC050N10NS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSC050N10NS5-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0164366daea34f7d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 136W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 136W
Case: PG-TDSON-8
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 61nC
Kind of channel: enhancement
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ISC011N03L5SATMA1 INFINEON TECHNOLOGIES Infineon-ISC011N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8a6d6d80982 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
On-state resistance: 1.1mΩ
Mounting: SMD
Kind of channel: enhancement
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ISC017N04NM5ATMA1 INFINEON TECHNOLOGIES Infineon-ISC017N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e446d60004 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 193A; 115W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 193A
Power dissipation: 115W
Case: PG-TDSON-8 FL
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 51nC
Kind of channel: enhancement
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BSC015NE2LS5IATMA1 INFINEON TECHNOLOGIES Infineon-BSC015NE2LS5I-DS-v02_00-EN.pdf?fileId=5546d4624f205c9a014f3bdacb5c1b44 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 33A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 33A
Power dissipation: 50W
Case: PG-TDSON-8
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 30nC
Kind of channel: enhancement
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BSC025N08LS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSC025N08LS5-DataSheet-v02_01-EN.pdf?fileId=5546d4626b2d8e69016b4c46568213e4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 55nC
Kind of channel: enhancement
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BSC0500NSIATMA1 INFINEON TECHNOLOGIES Infineon-BSC0500NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014efd4e65546362 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 52nC
Kind of channel: enhancement
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BSZ0500NSIATMA1 INFINEON TECHNOLOGIES Infineon-BSZ0500NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014efd7c2c2163ad Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 69W
Case: PG-TDSON-8
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 52nC
Kind of channel: enhancement
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BSZ0501NSIATMA1 INFINEON TECHNOLOGIES Infineon-BSZ0501NSI-DS-v02_00-EN.pdf?fileId=5546d4624cb7f111014cff6f9da822b8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 123A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 123A
Power dissipation: 50W
Case: PG-TDSON-8
On-state resistance: 2.1mΩ
Mounting: SMD
Kind of channel: enhancement
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IKFW90N60EH3XKSA1 INFINEON TECHNOLOGIES Infineon-IKFW90N60EH3-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0163016e976f32b5 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 77A; 178W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™
Turn-on time: 77ns
Turn-off time: 237ns
Gate charge: 440nC
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Collector current: 77A
Power dissipation: 178W
Pulsed collector current: 300A
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
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BSC093N15NS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSC093N15NS5-DS-v02_00-EN.pdf?fileId=5546d462503812bb01507033a3fa1175 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IRS2453DSTRPBF IRS2453DSTRPBF INFINEON TECHNOLOGIES irs2453d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; SO14; -260÷180mA; 1W; Ch: 4; 10÷16.6VDC; 600V
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: ballast controller; gate driver; high-/low-side
Case: SO14
Output current: -260...180mA
Number of channels: 4
Supply voltage: 10...16.6V DC
Mounting: SMD
Operating temperature: -25...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
Power: 1W
auf Bestellung 2425 Stücke:
Lieferzeit 14-21 Tag (e)
41+1.76 EUR
49+1.49 EUR
53+1.36 EUR
57+1.27 EUR
Mindestbestellmenge: 41
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IPT067N20NM6ATMA1 INFINEON TECHNOLOGIES IPT067N20NM6ATMA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 137A; Idm: 548A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 137A
Pulsed drain current: 548A
Power dissipation: 300W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Gate charge: 71nC
Kind of package: reel
Kind of channel: enhancement
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IPB043N10NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPB043N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f4dc08991b18 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 135A; 167W; D2PAK-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 135A
Power dissipation: 167W
Case: D2PAK-3
On-state resistance: 4.35mΩ
Mounting: SMD
Gate charge: 57nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR24N15DTRPBF IRFR24N15DTRPBF INFINEON TECHNOLOGIES IRFR24N15DTRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 24A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 24A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFR5410TRPBF IRFR5410TRPBF INFINEON TECHNOLOGIES irfr5410pbf.pdf description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; 66W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Power dissipation: 66W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 4032 Stücke:
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41+1.76 EUR
64+1.12 EUR
100+0.75 EUR
250+0.66 EUR
500+0.6 EUR
1000+0.59 EUR
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IRS2104STRPBF INFINEON TECHNOLOGIES IRS2104STRPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 270mA; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 270mA
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Supply voltage: 10...20V
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2500+0.82 EUR
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BFQ19SH6327XTSA1 BFQ19SH6327XTSA1 INFINEON TECHNOLOGIES BFQ19SH6327XTSA1-dte.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 0.12A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 0.12A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 5.5GHz
auf Bestellung 1902 Stücke:
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136+0.53 EUR
165+0.43 EUR
184+0.39 EUR
200+0.36 EUR
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IRF7821TRPBF IRF7821TRPBF INFINEON TECHNOLOGIES irf7821pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13.6A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13.6A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 2.5W
Technology: HEXFET®
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IRF7821TRPBFXTMA1 INFINEON TECHNOLOGIES irf7821pbf.pdf?fileId=5546d462533600a401535608d7f31d06 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13.6A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13.6A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PVA1352NPBF INFINEON TECHNOLOGIES IRSD-S-A0001054330-1.pdf?t.download=true&u=5oefqw Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; 25mA; PVA; 5Ω; THT; DIP8
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Manufacturer series: PVA
On-state resistance: 5Ω
Mounting: THT
Case: DIP8
Body dimensions: 8.6x6.5x3.9mm
Leads: for PCB
Insulation voltage: 4kV
Kind of output: MOSFET
Number of poles: 1
Operating temperature: -40...85°C
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50+6.76 EUR
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TLS715B0NAV50XTSA1 INFINEON TECHNOLOGIES Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-TSNP-7; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 5V
Output current: 0.15A
Case: PG-TSNP-7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4...40V
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TLS835B2ELVSEXUMA1 INFINEON TECHNOLOGIES Infineon-TLS835B2EL%20VSE-DS-v01_10-EN.pdf?fileId=5546d462625a528f01629aaf62894b1b Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V,5V; 0.35A; SSOP14
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 3.3V; 5V
Output current: 0.35A
Case: SSOP14
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3...40V
Integrated circuit features: Output Voltage Select Pin
Produkt ist nicht verfügbar
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XMC4200F64F256ABXQMA1 XMC4200F64F256ABXQMA1 INFINEON TECHNOLOGIES XMC4100-4200-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 40kBSRAM,256kBFLASH; 3.3VDC
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Case: PG-LQFP-64
Family: XMC4200
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Number of A/D channels: 9
Number of inputs/outputs: 35
Memory: 40kB SRAM; 256kB FLASH
Kind of core: 32-bit
Type of integrated circuit: ARM microcontroller
Produkt ist nicht verfügbar
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IRF6216TRPBF IRF6216TRPBF INFINEON TECHNOLOGIES irf6216pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -2.2A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -2.2A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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TT104N12KOFKHPSA1 TT104N12KOFKHPSA1 INFINEON TECHNOLOGIES TT104N_Type.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 104A; BG-PB20-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 104A
Case: BG-PB20-1
Max. forward voltage: 1.62V
Max. forward impulse current: 2.05kA
Gate current: 120mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IRS2308STRPBF INFINEON TECHNOLOGIES irs2308.pdf?fileId=5546d462533600a40153567a98ac2804 Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
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FS100R12W2T7B11BOMA1 INFINEON TECHNOLOGIES Infineon-FS100R12W2T7_B11-DS-v02_01-EN.pdf?fileId=5546d46267c74c9a01683d5d7ab56640 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Technology: EasyPACK™ 2B
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
Case: AG-EASY2B-2
Produkt ist nicht verfügbar
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IDW80C65D1XKSA1 IDW80C65D1XKSA1 INFINEON TECHNOLOGIES infineon-idw80c65d1-ds-en.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 80A; Ifsm: 320A; Ufmax: 1.7V; Ir: 40uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 80A
Semiconductor structure: common cathode
Max. forward voltage: 1.7V
Max. forward impulse current: 0.32kA
Reverse recovery time: 77ns
Leakage current: 40µA
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.1 EUR
Mindestbestellmenge: 23
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IDH16G65C6XKSA1 IDH16G65C6XKSA1 INFINEON TECHNOLOGIES IDH16G65C6.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; PG-TO220-2; 97W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.25V
Max. forward impulse current: 65A
Leakage current: 123µA
Kind of package: tube
Heatsink thickness: 1.17...1.37mm
Power dissipation: 97W
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IDDD16G65C6XTMA1 INFINEON TECHNOLOGIES IDDD16G65C6.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-HDSOP-10-1; SiC; SMD; 650V; 16A
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: PG-HDSOP-10-1
Max. forward voltage: 1.25V
Max. forward impulse current: 65A
Leakage current: 1.6µA
Kind of package: reel; tape
Power dissipation: 141W
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IPD180N10N3GATMA1 INFINEON TECHNOLOGIES IPD180N10N3_G.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 43A; Idm: 43A; 71W; DPAK
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 43A
Pulsed drain current: 43A
Power dissipation: 71W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 14.7mΩ
Mounting: SMD
Gate charge: 25nC
Kind of channel: enhancement
Technology: MOSFET
Application: automotive industry
auf Bestellung 22500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.63 EUR
Mindestbestellmenge: 2500
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BCR116SH6327 BCR116SH6327 INFINEON TECHNOLOGIES BCR116.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 4.7kΩ
Mounting: SMD
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Frequency: 150MHz
Polarisation: bipolar
Kind of transistor: BRT
Case: SOT363
Type of transistor: NPN x2
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
auf Bestellung 31 Stücke:
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31+2.3 EUR
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SPD08N50C3ATMA1 INFINEON TECHNOLOGIES Infineon-SPD08N50C3-DS-v02_06-en.pdf?fileId=db3a30433f1b26e8013f1ea5b45f0334 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 500V; 7.6A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 500V
Drain current: 7.6A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: 20V
Mounting: SMD
Gate charge: 32nC
Kind of channel: enhancement
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.79 EUR
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BAT5402VH6327XTSA1 BAT5402VH6327XTSA1 INFINEON TECHNOLOGIES BAT5404E6327HTSA1.pdf Infineon-BAT54SERIES-DS-v01_01-en.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 30V; 0.2A; 230mW
Type of diode: Schottky switching
Case: SC79
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Power dissipation: 0.23W
Max. forward impulse current: 0.6A
auf Bestellung 355 Stücke:
Lieferzeit 14-21 Tag (e)
355+0.2 EUR
Mindestbestellmenge: 355
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AIHD04N60RATMA1 AIHD04N60R.pdf
AIHD04N60RATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 27nC
Turn-on time: 22ns
Turn-off time: 317ns
Collector current: 4A
Pulsed collector current: 12A
Gate-emitter voltage: ±20V
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AIHD04N60RFATMA1 AIHD04N60RF.pdf
AIHD04N60RFATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 27nC
Turn-on time: 19ns
Turn-off time: 153ns
Collector current: 4A
Pulsed collector current: 12A
Gate-emitter voltage: ±20V
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IPC90N04S5-3R6
IPC90N04S5-3R6
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 63W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Kind of channel: enhancement
Drain current: 90A
Power dissipation: 63W
Technology: OptiMOS™ 5
Gate charge: 32.6nC
Produkt ist nicht verfügbar
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IPC90N04S5L-3R3
IPC90N04S5L-3R3
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 62W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 3.3mΩ
Mounting: SMD
Kind of channel: enhancement
Drain current: 90A
Power dissipation: 62W
Technology: OptiMOS™ 5
Gate charge: 40nC
Produkt ist nicht verfügbar
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IPB90N04S402ATMA1 Infineon-IPP_B_I90N04S4_02-DS-v01_01-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c7efe515e2f&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 150W; D2PAK,TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: D2PAK; TO263AB
Mounting: SMD
Kind of channel: enhancement
Drain current: 90A
Power dissipation: 150W
Application: automotive industry
Gate charge: 118nC
Produkt ist nicht verfügbar
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IPD90N04S304ATMA1 IPD90N04S304.pdf
IPD90N04S304ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 90A; 136W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Kind of channel: enhancement
Drain current: 90A
Power dissipation: 136W
Technology: OptiMOS™ T
Gate charge: 60nC
Produkt ist nicht verfügbar
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IPB90N04S402ATMA1 Infineon-IPP_B_I90N04S4_02-DS-v01_01-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c7efe515e2f&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 40V; 90A; 150W; D2PAK,TO263AB
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Case: D2PAK; TO263AB
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Drain current: 90A
Power dissipation: 150W
Application: automotive industry
Technology: MOSFET
Gate charge: 118nC
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+1.42 EUR
Mindestbestellmenge: 1000
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BSC0902NSIATMA1 BSC0902NSI-DTE.pdf
BSC0902NSIATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 89A; 48W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 89A
Power dissipation: 48W
Case: PG-TDSON-8
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Gate-source voltage: ±20V
auf Bestellung 4437 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
74+0.97 EUR
91+0.79 EUR
101+0.71 EUR
104+0.69 EUR
Mindestbestellmenge: 74
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BSC0909NSATMA1 BSC0909NS-DTE.pdf
BSC0909NSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 34V; 44A; 27W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 34V
Drain current: 44A
Power dissipation: 27W
Case: PG-TDSON-8
On-state resistance: 9.2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Gate-source voltage: ±20V
auf Bestellung 82 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
79+0.92 EUR
82+0.87 EUR
Mindestbestellmenge: 79
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BSC030P03NS3GAUMA1 BSC030P03NS3GAUMA1-DTE.pdf
BSC030P03NS3GAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100A; 125W; PG-TDSON-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±25V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ P3
auf Bestellung 1025 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.75 EUR
33+2.23 EUR
37+1.94 EUR
45+1.62 EUR
51+1.42 EUR
100+1.24 EUR
250+1.1 EUR
500+1 EUR
1000+0.99 EUR
Mindestbestellmenge: 27
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BSC035N10NS5ATMA1 BSC035N10NS5-DTE.pdf
BSC035N10NS5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
On-state resistance: 3.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
auf Bestellung 3769 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.2 EUR
Mindestbestellmenge: 33
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BSC028N06NSATMA1 BSC028N06NS-DTE.pdf
BSC028N06NSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 83W
Case: PG-TDSON-8
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Gate-source voltage: ±20V
auf Bestellung 1863 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.2 EUR
30+2.4 EUR
50+1.73 EUR
100+1.52 EUR
250+1.39 EUR
Mindestbestellmenge: 23
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BSC093N04LSGATMA1 BSC093N04LSG-DTE.pdf
BSC093N04LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 35W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 35W
Case: PG-TDSON-8
On-state resistance: 9.3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Gate-source voltage: ±20V
auf Bestellung 3101 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
73+0.99 EUR
101+0.71 EUR
141+0.51 EUR
Mindestbestellmenge: 73
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BSC0502NSIATMA1 Infineon-BSC0502NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014efe055d2f662a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Case: PG-TDSON-8
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Produkt ist nicht verfügbar
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ISZ065N03L5SATMA1 Infineon-ISZ065N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8cb687b0994
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Case: PG-TDSON-8 FL
On-state resistance: 8.6mΩ
Mounting: SMD
Gate charge: 10nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ISZ019N03L5SATMA1 Infineon-ISZ019N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8c249de0991
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Case: PG-TDSON-8
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSZ065N06LS5ATMA1 Infineon-BSZ065N06LS5-DS-v02_02-EN.pdf?fileId=5546d4625696ed760156e55f60164817
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 46W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Power dissipation: 46W
Case: PG-TDSON-8
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSZ040N06LS5ATMA1 Infineon-BSZ040N06LS5-DS-v02_01-EN.pdf?fileId=5546d4625696ed760156e53aa56447aa
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 69W; PG-TDSON-8
Case: PG-TDSON-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 6.6nC
On-state resistance: 4.4mΩ
Drain current: 40A
Power dissipation: 69W
Drain-source voltage: 60V
Produkt ist nicht verfügbar
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BSZ033NE2LS5ATMA1 Infineon-BSZ033NE2LS5-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014f1820c4931820
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 18A; 30W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 18A
Power dissipation: 30W
Case: PG-TDSON-8
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 18.3nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSZ070N08LS5ATMA1 Infineon-BSZ070N08LS5-DS-v02_02-EN.pdf?fileId=5546d4625696ed760156e60d9bc9507d
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Power dissipation: 69W
Case: PG-TDSON-8
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 14.1nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ISC230N10NM6ATMA1 Infineon-ISC230N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bba4e6aba024a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; 48W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Power dissipation: 48W
Case: PG-TDSON-8
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 7.4nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC065N06LS5ATMA1 Infineon-BSC065N06LS5-DS-v02_00-EN.pdf?fileId=5546d4625c54d85b015cc5a9ad087b39
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 64A; 46W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 64A
Power dissipation: 46W
Case: PG-TDSON-8
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ISC011N06LM5ATMA1 Infineon-ISC011N06LM5-DataSheet-v02_01-EN.pdf?fileId=5546d4627956d53f01795f5741e469ea
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 288A; 188W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 288A
Power dissipation: 188W
Case: PG-TDSON-8
On-state resistance: 1.15mΩ
Mounting: SMD
Gate charge: 63nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ISC0805NLSATMA1 Infineon-ISC0805NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd5077b86d89
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 71A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 71A
Power dissipation: 74W
Case: PG-TDSON-8
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC034N10LS5ATMA1 Infineon-BSC034N10LS5-DataSheet-v02_01-EN.pdf?fileId=5546d4626b2d8e69016b4c46675313e7
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 46nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPG20N06S4L26ATMA1 Infineon-IPG20N06S4L_26-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf68dd216c28&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 33W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 33W
Case: PG-TDSON-8
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 20nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC050N10NS5ATMA1 Infineon-BSC050N10NS5-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0164366daea34f7d
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 136W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 136W
Case: PG-TDSON-8
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 61nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ISC011N03L5SATMA1 Infineon-ISC011N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8a6d6d80982
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
On-state resistance: 1.1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ISC017N04NM5ATMA1 Infineon-ISC017N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e446d60004
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 193A; 115W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 193A
Power dissipation: 115W
Case: PG-TDSON-8 FL
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 51nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC015NE2LS5IATMA1 Infineon-BSC015NE2LS5I-DS-v02_00-EN.pdf?fileId=5546d4624f205c9a014f3bdacb5c1b44
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 33A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 33A
Power dissipation: 50W
Case: PG-TDSON-8
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 30nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC025N08LS5ATMA1 Infineon-BSC025N08LS5-DataSheet-v02_01-EN.pdf?fileId=5546d4626b2d8e69016b4c46568213e4
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 55nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC0500NSIATMA1 Infineon-BSC0500NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014efd4e65546362
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 52nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSZ0500NSIATMA1 Infineon-BSZ0500NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014efd7c2c2163ad
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 69W
Case: PG-TDSON-8
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 52nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSZ0501NSIATMA1 Infineon-BSZ0501NSI-DS-v02_00-EN.pdf?fileId=5546d4624cb7f111014cff6f9da822b8
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 123A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 123A
Power dissipation: 50W
Case: PG-TDSON-8
On-state resistance: 2.1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IKFW90N60EH3XKSA1 Infineon-IKFW90N60EH3-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0163016e976f32b5
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 77A; 178W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™
Turn-on time: 77ns
Turn-off time: 237ns
Gate charge: 440nC
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Collector current: 77A
Power dissipation: 178W
Pulsed collector current: 300A
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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BSC093N15NS5ATMA1 Infineon-BSC093N15NS5-DS-v02_00-EN.pdf?fileId=5546d462503812bb01507033a3fa1175
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IRS2453DSTRPBF irs2453d.pdf
IRS2453DSTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; SO14; -260÷180mA; 1W; Ch: 4; 10÷16.6VDC; 600V
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: ballast controller; gate driver; high-/low-side
Case: SO14
Output current: -260...180mA
Number of channels: 4
Supply voltage: 10...16.6V DC
Mounting: SMD
Operating temperature: -25...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
Power: 1W
auf Bestellung 2425 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.76 EUR
49+1.49 EUR
53+1.36 EUR
57+1.27 EUR
Mindestbestellmenge: 41
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IPT067N20NM6ATMA1 IPT067N20NM6ATMA1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 137A; Idm: 548A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 137A
Pulsed drain current: 548A
Power dissipation: 300W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Gate charge: 71nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB043N10NF2SATMA1 Infineon-IPB043N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f4dc08991b18
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 135A; 167W; D2PAK-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 135A
Power dissipation: 167W
Case: D2PAK-3
On-state resistance: 4.35mΩ
Mounting: SMD
Gate charge: 57nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR24N15DTRPBF IRFR24N15DTRPBF.pdf
IRFR24N15DTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 24A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 24A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR5410TRPBF description irfr5410pbf.pdf
IRFR5410TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; 66W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Power dissipation: 66W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 4032 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.76 EUR
64+1.12 EUR
100+0.75 EUR
250+0.66 EUR
500+0.6 EUR
1000+0.59 EUR
Mindestbestellmenge: 41
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IRS2104STRPBF IRS2104STRPBF.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 270mA; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 270mA
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Supply voltage: 10...20V
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.82 EUR
Mindestbestellmenge: 2500
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BFQ19SH6327XTSA1 BFQ19SH6327XTSA1-dte.pdf
BFQ19SH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 0.12A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 0.12A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 5.5GHz
auf Bestellung 1902 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
165+0.43 EUR
184+0.39 EUR
200+0.36 EUR
Mindestbestellmenge: 136
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IRF7821TRPBF irf7821pbf.pdf
IRF7821TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13.6A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13.6A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 2.5W
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF7821TRPBFXTMA1 irf7821pbf.pdf?fileId=5546d462533600a401535608d7f31d06
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13.6A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13.6A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PVA1352NPBF IRSD-S-A0001054330-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; 25mA; PVA; 5Ω; THT; DIP8
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Manufacturer series: PVA
On-state resistance: 5Ω
Mounting: THT
Case: DIP8
Body dimensions: 8.6x6.5x3.9mm
Leads: for PCB
Insulation voltage: 4kV
Kind of output: MOSFET
Number of poles: 1
Operating temperature: -40...85°C
auf Bestellung 4789 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+6.76 EUR
Mindestbestellmenge: 50
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TLS715B0NAV50XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-TSNP-7; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 5V
Output current: 0.15A
Case: PG-TSNP-7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4...40V
Produkt ist nicht verfügbar
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TLS835B2ELVSEXUMA1 Infineon-TLS835B2EL%20VSE-DS-v01_10-EN.pdf?fileId=5546d462625a528f01629aaf62894b1b
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V,5V; 0.35A; SSOP14
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 3.3V; 5V
Output current: 0.35A
Case: SSOP14
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3...40V
Integrated circuit features: Output Voltage Select Pin
Produkt ist nicht verfügbar
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XMC4200F64F256ABXQMA1 XMC4100-4200-DTE.pdf
XMC4200F64F256ABXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 40kBSRAM,256kBFLASH; 3.3VDC
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Case: PG-LQFP-64
Family: XMC4200
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Number of A/D channels: 9
Number of inputs/outputs: 35
Memory: 40kB SRAM; 256kB FLASH
Kind of core: 32-bit
Type of integrated circuit: ARM microcontroller
Produkt ist nicht verfügbar
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IRF6216TRPBF irf6216pbf.pdf
IRF6216TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -2.2A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -2.2A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TT104N12KOFKHPSA1 TT104N_Type.pdf
TT104N12KOFKHPSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 104A; BG-PB20-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 104A
Case: BG-PB20-1
Max. forward voltage: 1.62V
Max. forward impulse current: 2.05kA
Gate current: 120mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IRS2308STRPBF irs2308.pdf?fileId=5546d462533600a40153567a98ac2804
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
Produkt ist nicht verfügbar
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FS100R12W2T7B11BOMA1 Infineon-FS100R12W2T7_B11-DS-v02_01-EN.pdf?fileId=5546d46267c74c9a01683d5d7ab56640
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Technology: EasyPACK™ 2B
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
Case: AG-EASY2B-2
Produkt ist nicht verfügbar
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IDW80C65D1XKSA1 infineon-idw80c65d1-ds-en.pdf
IDW80C65D1XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 80A; Ifsm: 320A; Ufmax: 1.7V; Ir: 40uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 80A
Semiconductor structure: common cathode
Max. forward voltage: 1.7V
Max. forward impulse current: 0.32kA
Reverse recovery time: 77ns
Leakage current: 40µA
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.1 EUR
Mindestbestellmenge: 23
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IDH16G65C6XKSA1 IDH16G65C6.pdf
IDH16G65C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; PG-TO220-2; 97W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.25V
Max. forward impulse current: 65A
Leakage current: 123µA
Kind of package: tube
Heatsink thickness: 1.17...1.37mm
Power dissipation: 97W
Produkt ist nicht verfügbar
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IDDD16G65C6XTMA1 IDDD16G65C6.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-HDSOP-10-1; SiC; SMD; 650V; 16A
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: PG-HDSOP-10-1
Max. forward voltage: 1.25V
Max. forward impulse current: 65A
Leakage current: 1.6µA
Kind of package: reel; tape
Power dissipation: 141W
Produkt ist nicht verfügbar
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IPD180N10N3GATMA1 IPD180N10N3_G.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 43A; Idm: 43A; 71W; DPAK
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 43A
Pulsed drain current: 43A
Power dissipation: 71W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 14.7mΩ
Mounting: SMD
Gate charge: 25nC
Kind of channel: enhancement
Technology: MOSFET
Application: automotive industry
auf Bestellung 22500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.63 EUR
Mindestbestellmenge: 2500
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BCR116SH6327 BCR116.pdf
BCR116SH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 4.7kΩ
Mounting: SMD
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Frequency: 150MHz
Polarisation: bipolar
Kind of transistor: BRT
Case: SOT363
Type of transistor: NPN x2
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.3 EUR
Mindestbestellmenge: 31
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SPD08N50C3ATMA1 Infineon-SPD08N50C3-DS-v02_06-en.pdf?fileId=db3a30433f1b26e8013f1ea5b45f0334
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 500V; 7.6A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 500V
Drain current: 7.6A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: 20V
Mounting: SMD
Gate charge: 32nC
Kind of channel: enhancement
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.79 EUR
Mindestbestellmenge: 2500
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BAT5402VH6327XTSA1 BAT5404E6327HTSA1.pdf Infineon-BAT54SERIES-DS-v01_01-en.pdf
BAT5402VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 30V; 0.2A; 230mW
Type of diode: Schottky switching
Case: SC79
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Power dissipation: 0.23W
Max. forward impulse current: 0.6A
auf Bestellung 355 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
355+0.2 EUR
Mindestbestellmenge: 355
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