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IPP17N25S3100AKSA1 IPP17N25S3100AKSA1 INFINEON TECHNOLOGIES Infineon-IPP_B17N25S3_100-DS-v01_01-EN.pdf?fileId=db3a30433b92f0e8013b937c398a014b Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 250V; 13.3A; Idm: 68A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 13.3A
Pulsed drain current: 68A
Power dissipation: 107W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ T
auf Bestellung 482 Stücke:
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30+2.43 EUR
31+2.32 EUR
33+2.19 EUR
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IPTC019N10NM5ATMA1 INFINEON TECHNOLOGIES Infineon-IPTC019N10NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177a4fde687225b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 279A; Idm: 31A; 300W; PG-HDSOP-16
Case: PG-HDSOP-16
Mounting: SMD
Polarisation: N
Gate charge: 160nC
On-state resistance: 1.9mΩ
Kind of channel: enhancement
Power dissipation: 300W
Drain current: 279A
Gate-source voltage: 20V
Pulsed drain current: 31A
Drain-source voltage: 100V
Type of transistor: N-MOSFET
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1800+3.33 EUR
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IPA65R190E6XKSA1 IPA65R190E6XKSA1 INFINEON TECHNOLOGIES IPA65R190E6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 480 Stücke:
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19+3.88 EUR
26+2.79 EUR
100+2.2 EUR
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IPI65R190C6XKSA1 IPI65R190C6XKSA1 INFINEON TECHNOLOGIES IPI65R190C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of channel: enhancement
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IPA65R190C7XKSA1 IPA65R190C7XKSA1 INFINEON TECHNOLOGIES IPA65R190C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPA65R190CFDXKSA1 IPA65R190CFDXKSA1 INFINEON TECHNOLOGIES IPA65R190CFD-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPW65R190CFDFKSA1 IPW65R190CFDFKSA1 INFINEON TECHNOLOGIES IPW65R190CFD-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPB65R190CFDAATMA1 INFINEON TECHNOLOGIES Infineon-IPX65R190CFDA-DS-v02_00-en.pdf?fileId=db3a3043399628450139afa2346920a1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: D2PAK; TO263
On-state resistance: 171mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 68nC
Application: automotive industry
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IPB65R190C7ATMA1 IPB65R190C7ATMA1 INFINEON TECHNOLOGIES IPB65R190C7-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; 72W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 72W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
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IPB65R190CFDATMA1 IPB65R190CFDATMA1 INFINEON TECHNOLOGIES IPB65R190CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
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IPD65R190C7ATMA1 IPD65R190C7ATMA1 INFINEON TECHNOLOGIES IPD65R190C7-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.2A; 28W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.2A
On-state resistance: 0.19Ω
Gate-source voltage: ±20V
Power dissipation: 28W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPI65R190CFDXKSA1 IPI65R190CFDXKSA1 INFINEON TECHNOLOGIES IPI65R190CFD-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of channel: enhancement
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IPL65R190E6AUMA1 IPL65R190E6AUMA1 INFINEON TECHNOLOGIES IPL65R190E6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP65R190C6XKSA1 IPP65R190C6XKSA1 INFINEON TECHNOLOGIES IPP65R190C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP65R190E6XKSA1 IPP65R190E6XKSA1 INFINEON TECHNOLOGIES IPP65R190E6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA60R360P7SXKSA1 IPA60R360P7SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA60R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d55dbb6160fc7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 26A; 22W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 22W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 26A
auf Bestellung 85 Stücke:
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46+1.59 EUR
85+0.84 EUR
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IPB60R360P7ATMA1 IPB60R360P7ATMA1 INFINEON TECHNOLOGIES IPB60R360P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 41W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 41W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel
Kind of channel: enhancement
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40+1.79 EUR
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IPP60R360P7XKSA1 IPP60R360P7XKSA1 INFINEON TECHNOLOGIES IPP60R360P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 41W; PG-TO220-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 41W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 143 Stücke:
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55+1.32 EUR
60+1.2 EUR
67+1.07 EUR
82+0.87 EUR
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IPP60R360CFD7XKSA1 IPP60R360CFD7XKSA1 INFINEON TECHNOLOGIES Infineon-IPP60R360CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016fc7b033f30d49 Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ CFD7; unipolar; 650V; 5A; Idm: 24A
Type of transistor: N-MOSFET
Technology: CoolMOS™ CFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 43W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 674mΩ
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 24A
Produkt ist nicht verfügbar
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IPD60R360P7ATMA1 IPD60R360P7ATMA1 INFINEON TECHNOLOGIES IPD60R360P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 41W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 41W
Case: PG-TO252-3
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
Technology: CoolMOS™ P7
Gate-source voltage: ±20V
Version: ESD
Produkt ist nicht verfügbar
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IPD60R360P7SAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d550931ef0f70 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 41W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 41W
Case: DPAK; TO252
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD60R360P7SE8228AUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R360P7S-DataSheet-v02_02-EN.pdf?fileId=5546d4625cc9456a015d550931ef0f70 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 41W; DPAK3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 41W
Case: DPAK3
On-state resistance: 702mΩ
Mounting: SMD
Gate charge: 13nC
Produkt ist nicht verfügbar
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IPD60R360PFD7SAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R360PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e227958cc6750 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 6A; Idm: 24A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 43W
Case: PG-TO252-3
On-state resistance: 715mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™ PFD7
Pulsed drain current: 24A
Gate-source voltage: ±20V
Version: ESD
Produkt ist nicht verfügbar
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IPN60R360P7SATMA1 INFINEON TECHNOLOGIES Infineon-IPN60R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cf3d550b26150 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 26A; 7W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 7W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 26A
Produkt ist nicht verfügbar
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IPAN60R360PFD7SXKSA1 IPAN60R360PFD7SXKSA1 INFINEON TECHNOLOGIES Infineon-IPAN60R360PFD7S-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e225ddfd96741 Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 6A; Idm: 24A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 714mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 24A
Produkt ist nicht verfügbar
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IPN60R360PFD7SATMA1 INFINEON TECHNOLOGIES Infineon-IPN60R360PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e228292226759 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 10A; Idm: 10A; 7W; SOT223
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 7W
Case: SOT223
Gate-source voltage: 20V
On-state resistance: 303mΩ
Mounting: SMD
Gate charge: 12.7nC
Kind of channel: enhancement
Pulsed drain current: 10A
auf Bestellung 63000 Stücke:
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IPB013N06NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPB013N06NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851c67b6253b24 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 60V; 198A; 300W; D2PAK,TO263
Case: D2PAK; TO263
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate charge: 203nC
On-state resistance: 1.3mΩ
Drain-source voltage: 60V
Drain current: 198A
Power dissipation: 300W
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S25FL064LABMFB013 INFINEON TECHNOLOGIES infineon-s25fl064l-64-mbit-8-mbyte-3-datasheet-en.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Operating temperature: -40...105°C
Case: SOIC8
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 64Mb FLASH
Operating frequency: 108MHz
Application: automotive
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S25FL128LAGMFB013 INFINEON TECHNOLOGIES S25FL.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC8
Operating temperature: -40...105°C
Case: SOIC8
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 128Mb FLASH
Operating frequency: 133MHz
Application: automotive
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S25FL128LAGNFB013 INFINEON TECHNOLOGIES Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Operating temperature: -40...105°C
Case: WSON8
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 128Mb FLASH
Operating frequency: 133MHz
Application: automotive
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S25FL128SAGMFB013 INFINEON TECHNOLOGIES 001-98283%20Rev%20T.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Case: SOIC16
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 128Mb FLASH
Operating frequency: 133MHz
Application: automotive
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1450 Stücke
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S25FL256SAGMFB013 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Case: SOIC16
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 256Mb FLASH
Operating frequency: 133MHz
Application: automotive
Produkt ist nicht verfügbar
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S25FL512SAGMFB013 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Case: SOIC16
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 512Mb FLASH
Operating frequency: 133MHz
Application: automotive
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1450 Stücke
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S25FL512SDSMFB013 INFINEON TECHNOLOGIES Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Case: SOIC16
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 512Mb FLASH
Operating frequency: 80MHz
Application: automotive
Produkt ist nicht verfügbar
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S25FS512SAGMFB013 INFINEON TECHNOLOGIES Infineon-S25FS512S_512_Mb_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_Non-Volatile_Flash-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed681a356fe Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC16
Operating temperature: -40...105°C
Case: SOIC16
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 1.7...2V
Memory: 512Mb FLASH
Operating frequency: 133MHz
Application: automotive
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S25FS512SDSNFB013 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; WSON8
Operating temperature: -40...105°C
Case: WSON8
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 1.7...2V
Memory: 512Mb FLASH
Operating frequency: 80MHz
Application: automotive
Produkt ist nicht verfügbar
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S28HL512TFPBHB013 INFINEON TECHNOLOGIES S28H%28L%2CS%2901GT_256T_512T_RevA_7-8-19.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; octal; 166MHz; 2.7÷3.6V; BGA24
Operating temperature: -40...105°C
Case: BGA24
Interface: octal
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 512Mb FLASH
Operating frequency: 166MHz
Application: automotive
Produkt ist nicht verfügbar
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S28HS512TGABHB013 INFINEON TECHNOLOGIES S28H%28L%2CS%2901GT_256T_512T_RevA_7-8-19.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; octal; 200MHz; 1.7÷2V; BGA24; serial
Operating temperature: -40...105°C
Case: BGA24
Interface: octal
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 1.7...2V
Memory: 512Mb FLASH
Operating frequency: 200MHz
Application: automotive
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S29GL128S10DHB013 INFINEON TECHNOLOGIES Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Operating temperature: -40...105°C
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: parallel
Kind of package: reel; tape
Mounting: SMD
Access time: 100ns
Operating voltage: 2.7...3.6V
Memory: 128Mb FLASH
Application: automotive
Produkt ist nicht verfügbar
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S70GL02GS11FHB013 INFINEON TECHNOLOGIES Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Operating temperature: -40...105°C
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: parallel
Kind of package: reel; tape
Mounting: SMD
Access time: 110ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Application: automotive
Produkt ist nicht verfügbar
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CYUSB3314-88LTXC INFINEON TECHNOLOGIES Infineon-CYUSB330x_CYUSB331x_CYUSB332x_HX3_USB_3.0_Hub-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb53f644b8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: USB interfaces - integrated circuits
Description: IC: interface
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1EDF5673FXUMA1 1EDF5673FXUMA1 INFINEON TECHNOLOGIES 1EDF5673F_1EDF5663H.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-16
Mounting: SMD
Case: PG-DSO-16
Kind of integrated circuit: gate driver; high-side
Number of channels: 1
Integrated circuit features: galvanically isolated
Supply voltage: 3...3.5V; 6.5...20V
Technology: EiceDRIVER™; GaN
Voltage class: 650V
Kind of package: reel; tape
Type of integrated circuit: driver
Topology: single transistor
Output current: -8...4A
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1EDS5663HXUMA1 1EDS5663HXUMA1 INFINEON TECHNOLOGIES 1EDF5673F_1EDF5663H.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-16
Technology: EiceDRIVER™; GaN
Case: PG-DSO-16
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Type of integrated circuit: driver
Output current: -8...4A
Number of channels: 1
Supply voltage: 3...3.5V; 6.5...20V
Integrated circuit features: galvanically isolated
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IRF7410TRPBF IRF7410TRPBF INFINEON TECHNOLOGIES irf7410pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -16A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -16A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3391 Stücke:
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68+1.06 EUR
77+0.93 EUR
100+0.73 EUR
500+0.58 EUR
1000+0.56 EUR
Mindestbestellmenge: 68 Stücke
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ESD5V3U2U03FH6327XTSA1 INFINEON TECHNOLOGIES esd5v3u2useries.pdf?folderId=db3a30431441fb5d011488a9e66f0ded&fileId=db3a30431b0626df011b0d3e3ca97dc0 Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; TSFP-3; reel,tape; ESD
Type of diode: TVS array
Max. off-state voltage: 5.3V
Breakdown voltage: 6V
Case: TSFP-3
Mounting: SMD
Kind of package: reel; tape
Version: ESD
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IRFU13N20DPBF IRFU13N20DPBF INFINEON TECHNOLOGIES irfr13n20dpbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 14A; 110W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 14A
Power dissipation: 110W
Case: IPAK
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR13N20DTRPBF IRFR13N20DTRPBF INFINEON TECHNOLOGIES irfr13n20dpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 14A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 14A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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CYPD3171-24LQXQT INFINEON TECHNOLOGIES Infineon-EZ-PD(TM)_CCG3PA_Datasheet_USB_Type-C_Port_Controller-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee438366ac0 Category: USB interfaces - integrated circuits
Description: IC: interface; I2C,SPI,UART,USB 3.0; USB controller; 3.3VDC
Interface: I2C; SPI; UART; USB 3.0
Type of integrated circuit: interface
Case: QFN24
Mounting: SMD
Kind of integrated circuit: USB controller
Supply voltage: 3.3V DC
Produkt ist nicht verfügbar
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IPW90R340C3XKSA1 IPW90R340C3XKSA1 INFINEON TECHNOLOGIES Infineon-IPW90R340C3-DS-v01_00-en.pdf?fileId=db3a3043183a955501183c3a02810087 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 15A; 208W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 15A
Power dissipation: 208W
Case: TO247-3
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 94nC
Kind of channel: enhancement
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12+5.96 EUR
Mindestbestellmenge: 12 Stücke
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IPW60R070C6FKSA1 IPW60R070C6FKSA1 INFINEON TECHNOLOGIES IPW60R070C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRG4PSH71KDPBF IRG4PSH71KDPBF INFINEON TECHNOLOGIES irg4psh71kdpbf.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 78A; 350W; SUPER247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 78A
Power dissipation: 350W
Case: SUPER247
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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IRG4RC10UDPBF IRG4RC10UDPBF INFINEON TECHNOLOGIES irg4rc10udpbf.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 8.5A; 38W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 8.5A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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IRG4IBC10UDPBF IRG4IBC10UDPBF INFINEON TECHNOLOGIES irg4ibc10udpbf.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 3.9A; 25W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 3.9A
Power dissipation: 25W
Case: TO220AB
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Produkt ist nicht verfügbar
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IRG4IBC30WPBF IRG4IBC30WPBF INFINEON TECHNOLOGIES irg4ibc30wpbf.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 17A; 45W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 17A
Power dissipation: 45W
Case: TO220AB
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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IRG4PSH71UDPBF IRG4PSH71UDPBF INFINEON TECHNOLOGIES irg4psh71udpbf.pdf description Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 99A; 350W; SUPER247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 99A
Power dissipation: 350W
Case: SUPER247
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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IRG4RC10KDTRPBF IRG4RC10KDTRPBF INFINEON TECHNOLOGIES IRG4RC10KDTRPBF.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 9A; 38W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 9A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: reel
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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AUIRG4PC40S-E INFINEON TECHNOLOGIES auirg4pc40s-e.pdf?fileId=5546d462533600a4015355ba2a1c1517 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 160W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 160W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 150nC
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400+7.31 EUR
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CY8C4045AZI-S413 CY8C4045AZI-S413 INFINEON TECHNOLOGIES CY8C4024LQI-S411.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP48; 4kBSRAM,32kBFLASH
Mounting: SMD
Operating temperature: -40...85°C
Clock frequency: 48MHz
Integrated circuit features: CapSense
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Type of integrated circuit: PSoC microcontroller
Case: TQFP48
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 36
Memory: 4kB SRAM; 32kB FLASH
Kind of core: 32-bit
Produkt ist nicht verfügbar
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IPP032N06N3GXKSA1 IPP032N06N3GXKSA1 INFINEON TECHNOLOGIES IPP032N06N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 188W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 53 Stücke:
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25+2.95 EUR
48+1.52 EUR
53+1.34 EUR
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IPP052N06L3GXKSA1 IPP052N06L3GXKSA1 INFINEON TECHNOLOGIES IPP052N06L3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 115W; PG-TO220-3
Case: PG-TO220-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 5.2mΩ
Power dissipation: 115W
Drain current: 80A
Gate-source voltage: ±20V
Drain-source voltage: 60V
auf Bestellung 35 Stücke:
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32+2.25 EUR
35+2.04 EUR
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IPP17N25S3100AKSA1 Infineon-IPP_B17N25S3_100-DS-v01_01-EN.pdf?fileId=db3a30433b92f0e8013b937c398a014b
IPP17N25S3100AKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 250V; 13.3A; Idm: 68A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 13.3A
Pulsed drain current: 68A
Power dissipation: 107W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ T
auf Bestellung 482 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
30+2.43 EUR
31+2.32 EUR
33+2.19 EUR
Mindestbestellmenge: 30 Stücke
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IPTC019N10NM5ATMA1 Infineon-IPTC019N10NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46277921c320177a4fde687225b
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 279A; Idm: 31A; 300W; PG-HDSOP-16
Case: PG-HDSOP-16
Mounting: SMD
Polarisation: N
Gate charge: 160nC
On-state resistance: 1.9mΩ
Kind of channel: enhancement
Power dissipation: 300W
Drain current: 279A
Gate-source voltage: 20V
Pulsed drain current: 31A
Drain-source voltage: 100V
Type of transistor: N-MOSFET
auf Bestellung 1800 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
1800+3.33 EUR
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IPA65R190E6XKSA1 IPA65R190E6-DTE.pdf
IPA65R190E6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 480 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
19+3.88 EUR
26+2.79 EUR
100+2.2 EUR
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IPI65R190C6XKSA1 IPI65R190C6-DTE.pdf
IPI65R190C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA65R190C7XKSA1 IPA65R190C7-DTE.pdf
IPA65R190C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA65R190CFDXKSA1 IPA65R190CFD-DTE.pdf
IPA65R190CFDXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW65R190CFDFKSA1 IPW65R190CFD-DTE.pdf
IPW65R190CFDFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R190CFDAATMA1 Infineon-IPX65R190CFDA-DS-v02_00-en.pdf?fileId=db3a3043399628450139afa2346920a1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: D2PAK; TO263
On-state resistance: 171mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 68nC
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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IPB65R190C7ATMA1 IPB65R190C7-DTE.pdf
IPB65R190C7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; 72W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 72W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB65R190CFDATMA1 IPB65R190CFD-DTE.pdf
IPB65R190CFDATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD65R190C7ATMA1 IPD65R190C7-DTE.pdf
IPD65R190C7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.2A; 28W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.2A
On-state resistance: 0.19Ω
Gate-source voltage: ±20V
Power dissipation: 28W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IPI65R190CFDXKSA1 IPI65R190CFD-DTE.pdf
IPI65R190CFDXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPL65R190E6AUMA1 IPL65R190E6-DTE.pdf
IPL65R190E6AUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP65R190C6XKSA1 IPP65R190C6-DTE.pdf
IPP65R190C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP65R190E6XKSA1 IPP65R190E6-DTE.pdf
IPP65R190E6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA60R360P7SXKSA1 Infineon-IPA60R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d55dbb6160fc7
IPA60R360P7SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 26A; 22W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 22W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 26A
auf Bestellung 85 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
46+1.59 EUR
85+0.84 EUR
Mindestbestellmenge: 46 Stücke
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IPB60R360P7ATMA1 IPB60R360P7.pdf
IPB60R360P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 41W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 41W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 917 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
40+1.79 EUR
Mindestbestellmenge: 40 Stücke
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IPP60R360P7XKSA1 IPP60R360P7.pdf
IPP60R360P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 41W; PG-TO220-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 41W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 13nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 143 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
55+1.32 EUR
60+1.2 EUR
67+1.07 EUR
82+0.87 EUR
Mindestbestellmenge: 55 Stücke
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IPP60R360CFD7XKSA1 Infineon-IPP60R360CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016fc7b033f30d49
IPP60R360CFD7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ CFD7; unipolar; 650V; 5A; Idm: 24A
Type of transistor: N-MOSFET
Technology: CoolMOS™ CFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 43W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 674mΩ
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 24A
Produkt ist nicht verfügbar
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IPD60R360P7ATMA1 IPD60R360P7.pdf
IPD60R360P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 41W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 41W
Case: PG-TO252-3
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
Technology: CoolMOS™ P7
Gate-source voltage: ±20V
Version: ESD
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IPD60R360P7SAUMA1 Infineon-IPD60R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d550931ef0f70
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 41W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 41W
Case: DPAK; TO252
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IPD60R360P7SE8228AUMA1 Infineon-IPD60R360P7S-DataSheet-v02_02-EN.pdf?fileId=5546d4625cc9456a015d550931ef0f70
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 41W; DPAK3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 41W
Case: DPAK3
On-state resistance: 702mΩ
Mounting: SMD
Gate charge: 13nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IPD60R360PFD7SAUMA1 Infineon-IPD60R360PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e227958cc6750
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 600V; 6A; Idm: 24A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 43W
Case: PG-TO252-3
On-state resistance: 715mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™ PFD7
Pulsed drain current: 24A
Gate-source voltage: ±20V
Version: ESD
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IPN60R360P7SATMA1 Infineon-IPN60R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cf3d550b26150
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 26A; 7W; PG-SOT223
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 7W
Case: PG-SOT223
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 26A
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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IPAN60R360PFD7SXKSA1 Infineon-IPAN60R360PFD7S-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e225ddfd96741
IPAN60R360PFD7SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 6A; Idm: 24A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 23W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 714mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 24A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPN60R360PFD7SATMA1 Infineon-IPN60R360PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e228292226759
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 10A; Idm: 10A; 7W; SOT223
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 7W
Case: SOT223
Gate-source voltage: 20V
On-state resistance: 303mΩ
Mounting: SMD
Gate charge: 12.7nC
Kind of channel: enhancement
Pulsed drain current: 10A
auf Bestellung 63000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
3000+0.62 EUR
Mindestbestellmenge: 3000 Stücke
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IPB013N06NF2SATMA1 Infineon-IPB013N06NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851c67b6253b24
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 60V; 198A; 300W; D2PAK,TO263
Case: D2PAK; TO263
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SiC
Mounting: SMD
Polarisation: unipolar
Gate charge: 203nC
On-state resistance: 1.3mΩ
Drain-source voltage: 60V
Drain current: 198A
Power dissipation: 300W
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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S25FL064LABMFB013 infineon-s25fl064l-64-mbit-8-mbyte-3-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Operating temperature: -40...105°C
Case: SOIC8
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 64Mb FLASH
Operating frequency: 108MHz
Application: automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 2100 Stücke
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S25FL128LAGMFB013 S25FL.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC8
Operating temperature: -40...105°C
Case: SOIC8
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 128Mb FLASH
Operating frequency: 133MHz
Application: automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 2100 Stücke
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S25FL128LAGNFB013 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; WSON8
Operating temperature: -40...105°C
Case: WSON8
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 128Mb FLASH
Operating frequency: 133MHz
Application: automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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S25FL128SAGMFB013 001-98283%20Rev%20T.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Case: SOIC16
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 128Mb FLASH
Operating frequency: 133MHz
Application: automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 1450 Stücke
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S25FL256SAGMFB013
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Case: SOIC16
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 256Mb FLASH
Operating frequency: 133MHz
Application: automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 1450 Stücke
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S25FL512SAGMFB013
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Case: SOIC16
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 512Mb FLASH
Operating frequency: 133MHz
Application: automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 1450 Stücke
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S25FL512SDSMFB013 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 2.7÷3.6V; SOIC16
Operating temperature: -40...105°C
Case: SOIC16
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 512Mb FLASH
Operating frequency: 80MHz
Application: automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 1450 Stücke
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S25FS512SAGMFB013 Infineon-S25FS512S_512_Mb_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_Non-Volatile_Flash-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed681a356fe
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; SOIC16
Operating temperature: -40...105°C
Case: SOIC16
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 1.7...2V
Memory: 512Mb FLASH
Operating frequency: 133MHz
Application: automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 1450 Stücke
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S25FS512SDSNFB013
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; WSON8
Operating temperature: -40...105°C
Case: WSON8
Interface: QUAD SPI
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 1.7...2V
Memory: 512Mb FLASH
Operating frequency: 80MHz
Application: automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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S28HL512TFPBHB013 S28H%28L%2CS%2901GT_256T_512T_RevA_7-8-19.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; octal; 166MHz; 2.7÷3.6V; BGA24
Operating temperature: -40...105°C
Case: BGA24
Interface: octal
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 2.7...3.6V
Memory: 512Mb FLASH
Operating frequency: 166MHz
Application: automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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S28HS512TGABHB013 S28H%28L%2CS%2901GT_256T_512T_RevA_7-8-19.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; octal; 200MHz; 1.7÷2V; BGA24; serial
Operating temperature: -40...105°C
Case: BGA24
Interface: octal
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: serial
Kind of package: reel; tape
Mounting: SMD
Operating voltage: 1.7...2V
Memory: 512Mb FLASH
Operating frequency: 200MHz
Application: automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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S29GL128S10DHB013
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Operating temperature: -40...105°C
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: parallel
Kind of package: reel; tape
Mounting: SMD
Access time: 100ns
Operating voltage: 2.7...3.6V
Memory: 128Mb FLASH
Application: automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 2200 Stücke
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S70GL02GS11FHB013 Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 110ns; BGA64; parallel
Operating temperature: -40...105°C
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Kind of interface: parallel
Kind of package: reel; tape
Mounting: SMD
Access time: 110ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Application: automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 1600 Stücke
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CYUSB3314-88LTXC Infineon-CYUSB330x_CYUSB331x_CYUSB332x_HX3_USB_3.0_Hub-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb53f644b8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: interface
auf Bestellung 1010 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
168+5.79 EUR
Mindestbestellmenge: 168 Stücke
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1EDF5673FXUMA1 1EDF5673F_1EDF5663H.pdf
1EDF5673FXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-16
Mounting: SMD
Case: PG-DSO-16
Kind of integrated circuit: gate driver; high-side
Number of channels: 1
Integrated circuit features: galvanically isolated
Supply voltage: 3...3.5V; 6.5...20V
Technology: EiceDRIVER™; GaN
Voltage class: 650V
Kind of package: reel; tape
Type of integrated circuit: driver
Topology: single transistor
Output current: -8...4A
Produkt ist nicht verfügbar
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1EDS5663HXUMA1 1EDF5673F_1EDF5663H.pdf
1EDS5663HXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-16
Technology: EiceDRIVER™; GaN
Case: PG-DSO-16
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Kind of integrated circuit: gate driver; high-side
Topology: single transistor
Type of integrated circuit: driver
Output current: -8...4A
Number of channels: 1
Supply voltage: 3...3.5V; 6.5...20V
Integrated circuit features: galvanically isolated
Produkt ist nicht verfügbar
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IRF7410TRPBF irf7410pbf.pdf
IRF7410TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -16A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -16A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3391 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
68+1.06 EUR
77+0.93 EUR
100+0.73 EUR
500+0.58 EUR
1000+0.56 EUR
Mindestbestellmenge: 68 Stücke
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ESD5V3U2U03FH6327XTSA1 esd5v3u2useries.pdf?folderId=db3a30431441fb5d011488a9e66f0ded&fileId=db3a30431b0626df011b0d3e3ca97dc0
Hersteller: INFINEON TECHNOLOGIES
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; TSFP-3; reel,tape; ESD
Type of diode: TVS array
Max. off-state voltage: 5.3V
Breakdown voltage: 6V
Case: TSFP-3
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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IRFU13N20DPBF irfr13n20dpbf.pdf
IRFU13N20DPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 14A; 110W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 14A
Power dissipation: 110W
Case: IPAK
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR13N20DTRPBF irfr13n20dpbf.pdf
IRFR13N20DTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 14A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 14A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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CYPD3171-24LQXQT Infineon-EZ-PD(TM)_CCG3PA_Datasheet_USB_Type-C_Port_Controller-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee438366ac0
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: interface; I2C,SPI,UART,USB 3.0; USB controller; 3.3VDC
Interface: I2C; SPI; UART; USB 3.0
Type of integrated circuit: interface
Case: QFN24
Mounting: SMD
Kind of integrated circuit: USB controller
Supply voltage: 3.3V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IPW90R340C3XKSA1 Infineon-IPW90R340C3-DS-v01_00-en.pdf?fileId=db3a3043183a955501183c3a02810087
IPW90R340C3XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 15A; 208W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 15A
Power dissipation: 208W
Case: TO247-3
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 94nC
Kind of channel: enhancement
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
12+5.96 EUR
Mindestbestellmenge: 12 Stücke
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IPW60R070C6FKSA1 IPW60R070C6-DTE.pdf
IPW60R070C6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRG4PSH71KDPBF irg4psh71kdpbf.pdf
IRG4PSH71KDPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 78A; 350W; SUPER247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 78A
Power dissipation: 350W
Case: SUPER247
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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IRG4RC10UDPBF irg4rc10udpbf.pdf
IRG4RC10UDPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 8.5A; 38W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 8.5A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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IRG4IBC10UDPBF irg4ibc10udpbf.pdf
IRG4IBC10UDPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 3.9A; 25W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 3.9A
Power dissipation: 25W
Case: TO220AB
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Produkt ist nicht verfügbar
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IRG4IBC30WPBF irg4ibc30wpbf.pdf
IRG4IBC30WPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 17A; 45W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 17A
Power dissipation: 45W
Case: TO220AB
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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IRG4PSH71UDPBF description irg4psh71udpbf.pdf
IRG4PSH71UDPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 99A; 350W; SUPER247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 99A
Power dissipation: 350W
Case: SUPER247
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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IRG4RC10KDTRPBF IRG4RC10KDTRPBF.pdf
IRG4RC10KDTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 9A; 38W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 9A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: reel
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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AUIRG4PC40S-E auirg4pc40s-e.pdf?fileId=5546d462533600a4015355ba2a1c1517
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 160W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 160W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 150nC
auf Bestellung 39600 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
400+7.31 EUR
Mindestbestellmenge: 400 Stücke
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CY8C4045AZI-S413 CY8C4024LQI-S411.pdf
CY8C4045AZI-S413
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP48; 4kBSRAM,32kBFLASH
Mounting: SMD
Operating temperature: -40...85°C
Clock frequency: 48MHz
Integrated circuit features: CapSense
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Type of integrated circuit: PSoC microcontroller
Case: TQFP48
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 36
Memory: 4kB SRAM; 32kB FLASH
Kind of core: 32-bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IPP032N06N3GXKSA1 IPP032N06N3G-DTE.pdf
IPP032N06N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 188W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
25+2.95 EUR
48+1.52 EUR
53+1.34 EUR
Mindestbestellmenge: 25 Stücke
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IPP052N06L3GXKSA1 IPP052N06L3G-DTE.pdf
IPP052N06L3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 115W; PG-TO220-3
Case: PG-TO220-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 5.2mΩ
Power dissipation: 115W
Drain current: 80A
Gate-source voltage: ±20V
Drain-source voltage: 60V
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
32+2.25 EUR
35+2.04 EUR
Mindestbestellmenge: 32 Stücke
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