Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (128400) > Seite 2080 nach 2140
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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IPA037N08N3GXKSA1 | INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 75A; 41W; TO220FP Mounting: THT Kind of channel: enhancement Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Kind of package: tube Case: TO220FP Polarisation: unipolar On-state resistance: 3.7mΩ Gate-source voltage: ±20V Power dissipation: 41W Drain current: 75A Drain-source voltage: 80V |
auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BSP373NH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.8W; SOT223 Mounting: SMD Power dissipation: 1.8W Polarisation: unipolar Technology: OptiMOS™ Drain current: 1.8A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: SOT223 On-state resistance: 0.24Ω |
auf Bestellung 1008 Stücke: Lieferzeit 14-21 Tag (e) |
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IKY75N120CS6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 75A; 440W; TO247PLUS-4 Type of transistor: IGBT Technology: TRENCHSTOP™ 6 Collector-emitter voltage: 1.2kV Collector current: 75A Power dissipation: 440W Case: TO247PLUS-4 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 530nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
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BSP125H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223 Mounting: SMD Power dissipation: 1.8W Polarisation: unipolar Technology: SIPMOS™ Drain current: 0.12A Kind of channel: enhancement Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: SOT223 On-state resistance: 45Ω |
auf Bestellung 745 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP65R099C6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 38A Power dissipation: 278W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: CoolMOS™ |
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IPB65R099C6ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO263-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 38A Power dissipation: 278W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: SMD Kind of channel: enhancement Technology: CoolMOS™ |
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IPI65R099C6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO262-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 38A Power dissipation: 278W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: THT Kind of channel: enhancement Technology: CoolMOS™ |
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IPL65R099C7AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 21A; 128W; PG-VSON-4 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 21A Power dissipation: 128W Case: PG-VSON-4 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: SMD Kind of channel: enhancement |
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| IPDQ65R099CFD7AXTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 650V; 29A; 186W; automotive industry Type of transistor: N-MOSFET Drain-source voltage: 650V Drain current: 29A Power dissipation: 186W Gate-source voltage: 20V On-state resistance: 99mΩ Mounting: SMD Gate charge: 39nC Kind of channel: enhancement Application: automotive industry |
auf Bestellung 750 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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TD122N22KOF | INFINEON TECHNOLOGIES |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 2.2kV; 122A; BG-PB34-1; Ufmax: 1.95V Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 122A Case: BG-PB34-1 Max. forward voltage: 1.95V Max. forward impulse current: 3.3kA Gate current: 200mA Electrical mounting: screw Mechanical mounting: screw Max. load current: 220A |
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BSR302NL6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.7A; 0.5W; SC59 On-state resistance: 36mΩ Mounting: SMD Power dissipation: 0.5W Polarisation: unipolar Technology: OptiMOS™ 2 Drain current: 3.7A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: SC59 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IPA032N06N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 41W; TO220FP Mounting: THT Type of transistor: N-MOSFET Kind of package: tube Polarisation: unipolar On-state resistance: 3.2mΩ Gate-source voltage: ±20V Power dissipation: 41W Drain-source voltage: 60V Drain current: 84A Case: TO220FP Kind of channel: enhancement Technology: OptiMOS™ 3 |
Produkt ist nicht verfügbar |
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IRG4BC40W-STRRP | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 40A; 160W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 160W Case: D2PAK Mounting: SMD Kind of package: reel |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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S29AL016J70TFI010 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; TSOP48; parallel Mounting: SMD Type of integrated circuit: FLASH memory Operating temperature: -40...85°C Memory: 16Mb FLASH Kind of interface: parallel Case: TSOP48 Interface: CFI; parallel Operating voltage: 2.7...3.6V Kind of memory: NOR |
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IM393M6FXKLA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; SIP34x15; 10A Type of integrated circuit: driver Topology: IGBT three-phase bridge Kind of integrated circuit: 3-phase motor controller; IPM Technology: CIPOS™ Tiny Case: SIP34x15 Output current: 10A Integrated circuit features: integrated bootstrap functionality Mounting: THT Operating temperature: -40...125°C Operating voltage: 13.5...16.5/0...450V DC Frequency: 20kHz Kind of package: tube Voltage class: 600V Protection: undervoltage UVP |
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| IM393S6FXKLA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; SIP34x15; 6A Type of integrated circuit: driver Kind of integrated circuit: 3-phase motor controller; IPM Case: SIP34x15 Output current: 6A Integrated circuit features: integrated bootstrap functionality Mounting: THT Operating temperature: -40...125°C Protection: undervoltage UVP Technology: CIPOS™ Tiny Voltage class: 600V Kind of package: tube Frequency: 20kHz Operating voltage: 13.5...16.5/0...450V DC Topology: IGBT three-phase bridge |
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| IM393S6E3XKLA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 6A Type of integrated circuit: driver Kind of integrated circuit: 3-phase motor controller; IPM Case: DIP34x15 Output current: 6A Integrated circuit features: integrated bootstrap functionality Mounting: THT Operating temperature: -40...125°C Protection: undervoltage UVP Technology: CIPOS™ Tiny Voltage class: 600V Kind of package: tube Frequency: 20kHz Operating voltage: 13.5...16.5/0...450V DC Topology: IGBT three-phase bridge |
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| IM393L6E3XKLA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 15A Type of integrated circuit: driver Kind of integrated circuit: 3-phase motor controller; IPM Case: DIP34x15 Output current: 15A Integrated circuit features: integrated bootstrap functionality Mounting: THT Operating temperature: -40...125°C Protection: undervoltage UVP Technology: CIPOS™ Tiny Voltage class: 600V Kind of package: tube Frequency: 20kHz Operating voltage: 13.5...16.5/0...450V DC Topology: IGBT three-phase bridge |
Produkt ist nicht verfügbar |
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| IM393L6EXKLA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 15A Type of integrated circuit: driver Kind of integrated circuit: 3-phase motor controller; IPM Case: DIP34x15 Output current: 15A Integrated circuit features: integrated bootstrap functionality Mounting: THT Operating temperature: -40...125°C Protection: undervoltage UVP Technology: CIPOS™ Tiny Voltage class: 600V Kind of package: tube Frequency: 20kHz Operating voltage: 13.5...16.5/0...450V DC Topology: IGBT three-phase bridge |
Produkt ist nicht verfügbar |
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| IM393M6E2XKLA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 10A Type of integrated circuit: driver Kind of integrated circuit: 3-phase motor controller; IPM Case: DIP34x15 Output current: 10A Integrated circuit features: integrated bootstrap functionality Mounting: THT Operating temperature: -40...125°C Protection: undervoltage UVP Technology: CIPOS™ Tiny Voltage class: 600V Kind of package: tube Frequency: 20kHz Operating voltage: 13.5...16.5/0...450V DC Topology: IGBT three-phase bridge |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| IM393M6E3XKLA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 10A Type of integrated circuit: driver Kind of integrated circuit: 3-phase motor controller; IPM Case: DIP34x15 Output current: 10A Integrated circuit features: integrated bootstrap functionality Mounting: THT Operating temperature: -40...125°C Protection: undervoltage UVP Technology: CIPOS™ Tiny Voltage class: 600V Kind of package: tube Frequency: 20kHz Operating voltage: 13.5...16.5/0...450V DC Topology: IGBT three-phase bridge |
Produkt ist nicht verfügbar |
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| IM393M6EXKLA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 10A Type of integrated circuit: driver Kind of integrated circuit: 3-phase motor controller; IPM Case: DIP34x15 Output current: 10A Integrated circuit features: integrated bootstrap functionality Mounting: THT Operating temperature: -40...125°C Protection: undervoltage UVP Technology: CIPOS™ Tiny Voltage class: 600V Kind of package: tube Frequency: 20kHz Operating voltage: 13.5...16.5/0...450V DC Topology: IGBT three-phase bridge |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| IM393S6E2XKLA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 6A Type of integrated circuit: driver Kind of integrated circuit: 3-phase motor controller; IPM Case: DIP34x15 Output current: 6A Integrated circuit features: integrated bootstrap functionality Mounting: THT Operating temperature: -40...125°C Protection: undervoltage UVP Technology: CIPOS™ Tiny Voltage class: 600V Kind of package: tube Frequency: 20kHz Operating voltage: 13.5...16.5/0...450V DC Topology: IGBT three-phase bridge |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| IM393S6EXKLA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 6A Type of integrated circuit: driver Kind of integrated circuit: 3-phase motor controller; IPM Case: DIP34x15 Output current: 6A Integrated circuit features: integrated bootstrap functionality Mounting: THT Operating temperature: -40...125°C Protection: undervoltage UVP Technology: CIPOS™ Tiny Voltage class: 600V Kind of package: tube Frequency: 20kHz Operating voltage: 13.5...16.5/0...450V DC Topology: IGBT three-phase bridge |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| IM393X6E2XKLA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 20A Type of integrated circuit: driver Kind of integrated circuit: 3-phase motor controller; IPM Case: DIP34x15 Output current: 20A Integrated circuit features: integrated bootstrap functionality Mounting: THT Operating temperature: -40...125°C Protection: undervoltage UVP Technology: CIPOS™ Tiny Voltage class: 600V Kind of package: tube Frequency: 20kHz Operating voltage: 13.5...16.5/0...450V DC Topology: IGBT three-phase bridge |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| IM393X6E3XKLA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 20A Type of integrated circuit: driver Kind of integrated circuit: 3-phase motor controller; IPM Case: DIP34x15 Output current: 20A Integrated circuit features: integrated bootstrap functionality Mounting: THT Operating temperature: -40...125°C Protection: undervoltage UVP Technology: CIPOS™ Tiny Voltage class: 600V Kind of package: tube Frequency: 20kHz Operating voltage: 13.5...16.5/0...450V DC Topology: IGBT three-phase bridge |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| IM393X6EXKLA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 20A Type of integrated circuit: driver Kind of integrated circuit: 3-phase motor controller; IPM Case: DIP34x15 Output current: 20A Integrated circuit features: integrated bootstrap functionality Mounting: THT Operating temperature: -40...125°C Protection: undervoltage UVP Technology: CIPOS™ Tiny Voltage class: 600V Kind of package: tube Frequency: 20kHz Operating voltage: 13.5...16.5/0...450V DC Topology: IGBT three-phase bridge |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| IQE013N04LM6ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 205A; 107W; TSON8 Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 41nC On-state resistance: 1.35mΩ Drain-source voltage: 40V Power dissipation: 107W Drain current: 205A Case: TSON8 Kind of channel: enhancement Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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AUIRGP4062D | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; Trench; 600V; 24A; 125W; TO247AC Type of transistor: IGBT Technology: Trench Collector-emitter voltage: 600V Collector current: 24A Power dissipation: 125W Case: TO247AC Gate-emitter voltage: ±20V Pulsed collector current: 72A Mounting: THT Gate charge: 75nC Kind of package: tube Turn-on time: 64ns Turn-off time: 164ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 400 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BB85702VH7902XTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: varicap; 30V; 20mA; SC79; single diode; reel,tape; Ir: 200nA Case: SC79 Capacitance: 0.45...7.2pF Type of diode: varicap Mounting: SMD Features of semiconductor devices: RF Max. off-state voltage: 30V Load current: 20mA Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 0.2µA |
auf Bestellung 1847 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRFP4229PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 44A; 310W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 44A Power dissipation: 310W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 46mΩ Mounting: THT Gate charge: 72nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® |
auf Bestellung 524 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRFP4768PBFXKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 66A; Idm: 370A; 520W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 66A Power dissipation: 520W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 17.5mΩ Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 370A Technology: HEXFET® |
auf Bestellung 53 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRFP4321PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 78A; 310W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 78A Power dissipation: 310W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 15.5mΩ Mounting: THT Gate charge: 71nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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TD120N16SOFHPSA1 | INFINEON TECHNOLOGIES |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 120A; BG-SB20-1; Ufmax: 1.75V Case: BG-SB20-1 Mechanical mounting: screw Electrical mounting: screw Gate current: 100mA Max. forward voltage: 1.75V Load current: 120A Max. load current: 190A Max. off-state voltage: 1.6kV Max. forward impulse current: 2.25kA Semiconductor structure: double series Type of semiconductor module: diode-thyristor |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BCR129WH6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SOT323 Mounting: SMD Frequency: 150MHz Base resistor: 10kΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BCR129E6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Frequency: 150MHz Base resistor: 10kΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BCR133SH6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 10kΩ Mounting: SMD Collector-emitter voltage: 50V Base-emitter resistor: 10kΩ Base resistor: 10kΩ Frequency: 130MHz Polarisation: bipolar Kind of transistor: BRT Type of transistor: NPN x2 Case: SOT363 Collector current: 0.1A Power dissipation: 0.25W |
auf Bestellung 14903 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IPP200N15N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 50A; 150W; PG-TO220-3 On-state resistance: 20mΩ Mounting: THT Power dissipation: 150W Polarisation: unipolar Technology: OptiMOS™ 3 Drain current: 50A Kind of channel: enhancement Drain-source voltage: 150V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: PG-TO220-3 |
auf Bestellung 64 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRFML8244TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 5.8A; 1.25W; SOT23 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 25V Drain current: 5.8A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Gate charge: 5.4nC Kind of channel: enhancement |
auf Bestellung 790 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IPP60R385CPXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO220-3 Mounting: THT Kind of package: tube Polarisation: unipolar On-state resistance: 0.385Ω Drain current: 9A Gate-source voltage: ±20V Power dissipation: 83W Drain-source voltage: 600V Technology: CoolMOS™ CP Kind of channel: enhancement Type of transistor: N-MOSFET Case: PG-TO220-3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IPB60R385CPATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ CP Polarisation: unipolar Drain-source voltage: 600V Drain current: 9A Power dissipation: 83W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.385Ω Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IPD60R385CPATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; Idm: 27A; 83W; PG-TO252 Type of transistor: N-MOSFET Technology: CoolMOS™ CP Polarisation: unipolar Drain-source voltage: 600V Drain current: 5.7A Pulsed drain current: 27A Power dissipation: 83W Case: PG-TO252 Gate-source voltage: ±20V On-state resistance: 0.385Ω Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IPL60R385CPAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-VSON-4 Type of transistor: N-MOSFET Technology: CoolMOS™ CP Polarisation: unipolar Drain-source voltage: 600V Drain current: 9A Power dissipation: 83W Case: PG-VSON-4 Gate-source voltage: ±20V On-state resistance: 0.385Ω Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BAS116E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 0.25A; 0.6us; SOT23; Ufmax: 1.25V; 370mW Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.25A Reverse recovery time: 0.6µs Semiconductor structure: single diode Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4.5A Power dissipation: 0.37W Kind of package: reel; tape Features of semiconductor devices: fast switching |
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Im Einkaufswagen Stück im Wert von UAH |
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CY8C4125LTI-M445 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: PSoC microcontroller; 24MHz; QFN68; 4kBSRAM,32kBFLASH Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART Clock frequency: 24MHz Integrated circuit features: CapSense; LCD controller Kind of core: 32-bit Memory: 4kB SRAM; 32kB FLASH Case: QFN68 Mounting: SMD Supply voltage: 1.71...5.5V DC Number of inputs/outputs: 55 Type of integrated circuit: PSoC microcontroller Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 260 Stücke Im Einkaufswagen Stück im Wert von UAH |
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CY8C4245LTI-M445 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: PSoC microcontroller; 48MHz; QFN68; 4kBSRAM,32kBFLASH Operating temperature: -40...85°C Type of integrated circuit: PSoC microcontroller Case: QFN68 Integrated circuit features: CapSense; LCD controller Mounting: SMD Kind of core: 32-bit Supply voltage: 1.71...5.5V DC Number of inputs/outputs: 55 Memory: 4kB SRAM; 32kB FLASH Clock frequency: 48MHz Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 260 Stücke Im Einkaufswagen Stück im Wert von UAH |
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AIKW75N60CTXKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 428W Case: TO247-3 Mounting: THT Gate charge: 470nC Kind of package: tube Pulsed collector current: 225A Collector-emitter voltage: 600V Turn-on time: 69ns Turn-off time: 365ns Features of semiconductor devices: integrated anti-parallel diode Gate-emitter voltage: ±20V Collector current: 75A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| ITS4200SMEPHUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1.4A; Ch: 1; N-Channel; SMD; SOT223-4 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.4A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223-4 Supply voltage: 11...45V DC Technology: Industrial PROFET Operating temperature: -40...125°C Kind of package: reel; tape On-state resistance: 0.15Ω |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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CYPD3177-24LQXQ | INFINEON TECHNOLOGIES |
Category: USB interfaces - integrated circuits Description: IC: interface; I2C; transceiver; QFN24; 10mA; USB Type of integrated circuit: interface Interface: I2C Kind of integrated circuit: transceiver Data transfer rate: 1Mbps Case: QFN24 Mounting: SMD Operating temperature: -40...105°C DC supply current: 10mA Application: USB |
auf Bestellung 670 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 490 Stücke Im Einkaufswagen Stück im Wert von UAH |
| EVALPSIR2085TOBO1 | INFINEON TECHNOLOGIES |
Category: Integrated circuits - Unclassified Description: EVALPSIR2085TOBO1 |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |
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BSS225H6327FTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.09A; 1W; SOT89 Mounting: SMD Power dissipation: 1W Polarisation: unipolar Technology: SIPMOS™ Drain current: 90mA Kind of channel: enhancement Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: SOT89 On-state resistance: 45Ω |
auf Bestellung 862 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRFR3806TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 43A; 71W; DPAK Mounting: SMD Case: DPAK Power dissipation: 71W Polarisation: unipolar Technology: HEXFET® Drain current: 43A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Kind of package: reel |
auf Bestellung 171 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IPP17N25S3100AKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 250V; 13.3A; Idm: 68A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 13.3A Pulsed drain current: 68A Power dissipation: 107W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: THT Kind of channel: enhancement Technology: OptiMOS™ T |
auf Bestellung 482 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IPB65R190CFDAATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; D2PAK,TO263 Type of transistor: N-MOSFET Drain-source voltage: 650V Drain current: 17.5A Power dissipation: 151W Case: D2PAK; TO263 On-state resistance: 171mΩ Mounting: SMD Gate charge: 68nC Kind of channel: enhancement Polarisation: unipolar Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IPB65R190C7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 13A; 72W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Drain-source voltage: 650V Drain current: 13A Power dissipation: 72W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Kind of channel: enhancement Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IPB65R190CFDATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Drain-source voltage: 650V Drain current: 17.5A Power dissipation: 151W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Kind of channel: enhancement Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IPD65R190C7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 3.2A; 28W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 3.2A Power dissipation: 28W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IPL65R190E6AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-VSON-4 Type of transistor: N-MOSFET Technology: CoolMOS™ Drain-source voltage: 650V Drain current: 20.2A Power dissipation: 151W Case: PG-VSON-4 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Kind of channel: enhancement Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IPA60R360P7SXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 26A; 22W; TO220FP; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 650V Drain current: 6A Power dissipation: 22W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.36Ω Mounting: THT Kind of channel: enhancement Pulsed drain current: 26A Version: ESD Kind of package: tube |
auf Bestellung 43 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IPD60R360P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 41W; PG-TO252-3; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Power dissipation: 41W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.36Ω Mounting: SMD Kind of channel: enhancement Gate charge: 13nC Version: ESD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IPA037N08N3GXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 75A; 41W; TO220FP
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Kind of package: tube
Case: TO220FP
Polarisation: unipolar
On-state resistance: 3.7mΩ
Gate-source voltage: ±20V
Power dissipation: 41W
Drain current: 75A
Drain-source voltage: 80V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 75A; 41W; TO220FP
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Kind of package: tube
Case: TO220FP
Polarisation: unipolar
On-state resistance: 3.7mΩ
Gate-source voltage: ±20V
Power dissipation: 41W
Drain current: 75A
Drain-source voltage: 80V
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
| BSP373NH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.8W; SOT223
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Technology: OptiMOS™
Drain current: 1.8A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SOT223
On-state resistance: 0.24Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.8W; SOT223
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Technology: OptiMOS™
Drain current: 1.8A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SOT223
On-state resistance: 0.24Ω
auf Bestellung 1008 Stücke:
Lieferzeit 14-21 Tag (e)
| IKY75N120CS6XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 440W; TO247PLUS-4
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 440W
Case: TO247PLUS-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 530nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 440W; TO247PLUS-4
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 440W
Case: TO247PLUS-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 530nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSP125H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: 0.12A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SOT223
On-state resistance: 45Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: 0.12A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SOT223
On-state resistance: 45Ω
auf Bestellung 745 Stücke:
Lieferzeit 14-21 Tag (e)
| IPP65R099C6XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPB65R099C6ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPI65R099C6XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of channel: enhancement
Technology: CoolMOS™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPL65R099C7AUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21A; 128W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Power dissipation: 128W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21A; 128W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Power dissipation: 128W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPDQ65R099CFD7AXTMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 650V; 29A; 186W; automotive industry
Type of transistor: N-MOSFET
Drain-source voltage: 650V
Drain current: 29A
Power dissipation: 186W
Gate-source voltage: 20V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 39nC
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 650V; 29A; 186W; automotive industry
Type of transistor: N-MOSFET
Drain-source voltage: 650V
Drain current: 29A
Power dissipation: 186W
Gate-source voltage: 20V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 39nC
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 750 Stücke:
Lieferzeit 14-21 Tag (e)
| TD122N22KOF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 122A; BG-PB34-1; Ufmax: 1.95V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 122A
Case: BG-PB34-1
Max. forward voltage: 1.95V
Max. forward impulse current: 3.3kA
Gate current: 200mA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 220A
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 122A; BG-PB34-1; Ufmax: 1.95V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 122A
Case: BG-PB34-1
Max. forward voltage: 1.95V
Max. forward impulse current: 3.3kA
Gate current: 200mA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 220A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSR302NL6327HTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.7A; 0.5W; SC59
On-state resistance: 36mΩ
Mounting: SMD
Power dissipation: 0.5W
Polarisation: unipolar
Technology: OptiMOS™ 2
Drain current: 3.7A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SC59
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.7A; 0.5W; SC59
On-state resistance: 36mΩ
Mounting: SMD
Power dissipation: 0.5W
Polarisation: unipolar
Technology: OptiMOS™ 2
Drain current: 3.7A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SC59
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPA032N06N3GXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 41W; TO220FP
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Power dissipation: 41W
Drain-source voltage: 60V
Drain current: 84A
Case: TO220FP
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 41W; TO220FP
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Power dissipation: 41W
Drain-source voltage: 60V
Drain current: 84A
Case: TO220FP
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRG4BC40W-STRRP |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 160W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 160W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 160W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 160W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| S29AL016J70TFI010 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; TSOP48; parallel
Mounting: SMD
Type of integrated circuit: FLASH memory
Operating temperature: -40...85°C
Memory: 16Mb FLASH
Kind of interface: parallel
Case: TSOP48
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; TSOP48; parallel
Mounting: SMD
Type of integrated circuit: FLASH memory
Operating temperature: -40...85°C
Memory: 16Mb FLASH
Kind of interface: parallel
Case: TSOP48
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IM393M6FXKLA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; SIP34x15; 10A
Type of integrated circuit: driver
Topology: IGBT three-phase bridge
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: CIPOS™ Tiny
Case: SIP34x15
Output current: 10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...16.5/0...450V DC
Frequency: 20kHz
Kind of package: tube
Voltage class: 600V
Protection: undervoltage UVP
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; SIP34x15; 10A
Type of integrated circuit: driver
Topology: IGBT three-phase bridge
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: CIPOS™ Tiny
Case: SIP34x15
Output current: 10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...16.5/0...450V DC
Frequency: 20kHz
Kind of package: tube
Voltage class: 600V
Protection: undervoltage UVP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IM393S6FXKLA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; SIP34x15; 6A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: SIP34x15
Output current: 6A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Voltage class: 600V
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...16.5/0...450V DC
Topology: IGBT three-phase bridge
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; SIP34x15; 6A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: SIP34x15
Output current: 6A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Voltage class: 600V
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...16.5/0...450V DC
Topology: IGBT three-phase bridge
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IM393S6E3XKLA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 6A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 6A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Voltage class: 600V
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...16.5/0...450V DC
Topology: IGBT three-phase bridge
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 6A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 6A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Voltage class: 600V
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...16.5/0...450V DC
Topology: IGBT three-phase bridge
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IM393L6E3XKLA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 15A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Voltage class: 600V
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...16.5/0...450V DC
Topology: IGBT three-phase bridge
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 15A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Voltage class: 600V
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...16.5/0...450V DC
Topology: IGBT three-phase bridge
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IM393L6EXKLA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 15A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Voltage class: 600V
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...16.5/0...450V DC
Topology: IGBT three-phase bridge
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 15A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Voltage class: 600V
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...16.5/0...450V DC
Topology: IGBT three-phase bridge
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IM393M6E2XKLA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 10A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Voltage class: 600V
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...16.5/0...450V DC
Topology: IGBT three-phase bridge
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 10A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Voltage class: 600V
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...16.5/0...450V DC
Topology: IGBT three-phase bridge
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IM393M6E3XKLA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 10A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Voltage class: 600V
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...16.5/0...450V DC
Topology: IGBT three-phase bridge
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 10A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Voltage class: 600V
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...16.5/0...450V DC
Topology: IGBT three-phase bridge
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IM393M6EXKLA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 10A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Voltage class: 600V
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...16.5/0...450V DC
Topology: IGBT three-phase bridge
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 10A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Voltage class: 600V
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...16.5/0...450V DC
Topology: IGBT three-phase bridge
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IM393S6E2XKLA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 6A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 6A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Voltage class: 600V
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...16.5/0...450V DC
Topology: IGBT three-phase bridge
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 6A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 6A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Voltage class: 600V
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...16.5/0...450V DC
Topology: IGBT three-phase bridge
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IM393S6EXKLA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 6A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 6A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Voltage class: 600V
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...16.5/0...450V DC
Topology: IGBT three-phase bridge
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 6A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 6A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Voltage class: 600V
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...16.5/0...450V DC
Topology: IGBT three-phase bridge
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IM393X6E2XKLA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 20A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Voltage class: 600V
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...16.5/0...450V DC
Topology: IGBT three-phase bridge
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 20A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Voltage class: 600V
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...16.5/0...450V DC
Topology: IGBT three-phase bridge
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IM393X6E3XKLA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 20A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Voltage class: 600V
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...16.5/0...450V DC
Topology: IGBT three-phase bridge
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 20A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Voltage class: 600V
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...16.5/0...450V DC
Topology: IGBT three-phase bridge
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IM393X6EXKLA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 20A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Voltage class: 600V
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...16.5/0...450V DC
Topology: IGBT three-phase bridge
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 20A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 20A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Voltage class: 600V
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...16.5/0...450V DC
Topology: IGBT three-phase bridge
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IQE013N04LM6ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 205A; 107W; TSON8
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 41nC
On-state resistance: 1.35mΩ
Drain-source voltage: 40V
Power dissipation: 107W
Drain current: 205A
Case: TSON8
Kind of channel: enhancement
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 205A; 107W; TSON8
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 41nC
On-state resistance: 1.35mΩ
Drain-source voltage: 40V
Power dissipation: 107W
Drain current: 205A
Case: TSON8
Kind of channel: enhancement
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AUIRGP4062D |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 24A; 125W; TO247AC
Type of transistor: IGBT
Technology: Trench
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 125W
Case: TO247AC
Gate-emitter voltage: ±20V
Pulsed collector current: 72A
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 164ns
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 24A; 125W; TO247AC
Type of transistor: IGBT
Technology: Trench
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 125W
Case: TO247AC
Gate-emitter voltage: ±20V
Pulsed collector current: 72A
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 164ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 400 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BB85702VH7902XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SC79; single diode; reel,tape; Ir: 200nA
Case: SC79
Capacitance: 0.45...7.2pF
Type of diode: varicap
Mounting: SMD
Features of semiconductor devices: RF
Max. off-state voltage: 30V
Load current: 20mA
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.2µA
Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SC79; single diode; reel,tape; Ir: 200nA
Case: SC79
Capacitance: 0.45...7.2pF
Type of diode: varicap
Mounting: SMD
Features of semiconductor devices: RF
Max. off-state voltage: 30V
Load current: 20mA
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.2µA
auf Bestellung 1847 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFP4229PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 44A; 310W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 44A
Power dissipation: 310W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 46mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 44A; 310W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 44A
Power dissipation: 310W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 46mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 524 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFP4768PBFXKMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 66A; Idm: 370A; 520W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 66A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 370A
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 66A; Idm: 370A; 520W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 66A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 370A
Technology: HEXFET®
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFP4321PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 78A; 310W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 78A
Power dissipation: 310W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 15.5mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 78A; 310W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 78A
Power dissipation: 310W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 15.5mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
| TD120N16SOFHPSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 120A; BG-SB20-1; Ufmax: 1.75V
Case: BG-SB20-1
Mechanical mounting: screw
Electrical mounting: screw
Gate current: 100mA
Max. forward voltage: 1.75V
Load current: 120A
Max. load current: 190A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 2.25kA
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 120A; BG-SB20-1; Ufmax: 1.75V
Case: BG-SB20-1
Mechanical mounting: screw
Electrical mounting: screw
Gate current: 100mA
Max. forward voltage: 1.75V
Load current: 120A
Max. load current: 190A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 2.25kA
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
| BCR129WH6327 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BCR129E6327 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BCR133SH6327 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 10kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Base-emitter resistor: 10kΩ
Base resistor: 10kΩ
Frequency: 130MHz
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 10kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Base-emitter resistor: 10kΩ
Base resistor: 10kΩ
Frequency: 130MHz
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
auf Bestellung 14903 Stücke:
Lieferzeit 14-21 Tag (e)
| IPP200N15N3GXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 50A; 150W; PG-TO220-3
On-state resistance: 20mΩ
Mounting: THT
Power dissipation: 150W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 50A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 50A; 150W; PG-TO220-3
On-state resistance: 20mΩ
Mounting: THT
Power dissipation: 150W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 50A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
auf Bestellung 64 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFML8244TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 5.8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 5.8A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 5.4nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 5.8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 5.8A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 5.4nC
Kind of channel: enhancement
auf Bestellung 790 Stücke:
Lieferzeit 14-21 Tag (e)
| IPP60R385CPXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO220-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.385Ω
Drain current: 9A
Gate-source voltage: ±20V
Power dissipation: 83W
Drain-source voltage: 600V
Technology: CoolMOS™ CP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO220-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO220-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.385Ω
Drain current: 9A
Gate-source voltage: ±20V
Power dissipation: 83W
Drain-source voltage: 600V
Technology: CoolMOS™ CP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO220-3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPB60R385CPATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 83W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.385Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 83W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.385Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPD60R385CPATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; Idm: 27A; 83W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.7A
Pulsed drain current: 27A
Power dissipation: 83W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 0.385Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; Idm: 27A; 83W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.7A
Pulsed drain current: 27A
Power dissipation: 83W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 0.385Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPL60R385CPAUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 83W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.385Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; 83W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 83W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.385Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAS116E6327HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 0.6us; SOT23; Ufmax: 1.25V; 370mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 0.6µs
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.37W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 0.6us; SOT23; Ufmax: 1.25V; 370mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 0.6µs
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Power dissipation: 0.37W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY8C4125LTI-M445 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; QFN68; 4kBSRAM,32kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Clock frequency: 24MHz
Integrated circuit features: CapSense; LCD controller
Kind of core: 32-bit
Memory: 4kB SRAM; 32kB FLASH
Case: QFN68
Mounting: SMD
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 55
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; QFN68; 4kBSRAM,32kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Clock frequency: 24MHz
Integrated circuit features: CapSense; LCD controller
Kind of core: 32-bit
Memory: 4kB SRAM; 32kB FLASH
Case: QFN68
Mounting: SMD
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 55
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 260 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY8C4245LTI-M445 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; QFN68; 4kBSRAM,32kBFLASH
Operating temperature: -40...85°C
Type of integrated circuit: PSoC microcontroller
Case: QFN68
Integrated circuit features: CapSense; LCD controller
Mounting: SMD
Kind of core: 32-bit
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 55
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 48MHz
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; QFN68; 4kBSRAM,32kBFLASH
Operating temperature: -40...85°C
Type of integrated circuit: PSoC microcontroller
Case: QFN68
Integrated circuit features: CapSense; LCD controller
Mounting: SMD
Kind of core: 32-bit
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 55
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 48MHz
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Produkt ist nicht verfügbar
Mindestbestellmenge: 260 Stücke
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| AIKW75N60CTXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Pulsed collector current: 225A
Collector-emitter voltage: 600V
Turn-on time: 69ns
Turn-off time: 365ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 75A
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Pulsed collector current: 225A
Collector-emitter voltage: 600V
Turn-on time: 69ns
Turn-off time: 365ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 75A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ITS4200SMEPHUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.4A; Ch: 1; N-Channel; SMD; SOT223-4
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-4
Supply voltage: 11...45V DC
Technology: Industrial PROFET
Operating temperature: -40...125°C
Kind of package: reel; tape
On-state resistance: 0.15Ω
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.4A; Ch: 1; N-Channel; SMD; SOT223-4
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-4
Supply voltage: 11...45V DC
Technology: Industrial PROFET
Operating temperature: -40...125°C
Kind of package: reel; tape
On-state resistance: 0.15Ω
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CYPD3177-24LQXQ |
|
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: interface; I2C; transceiver; QFN24; 10mA; USB
Type of integrated circuit: interface
Interface: I2C
Kind of integrated circuit: transceiver
Data transfer rate: 1Mbps
Case: QFN24
Mounting: SMD
Operating temperature: -40...105°C
DC supply current: 10mA
Application: USB
Category: USB interfaces - integrated circuits
Description: IC: interface; I2C; transceiver; QFN24; 10mA; USB
Type of integrated circuit: interface
Interface: I2C
Kind of integrated circuit: transceiver
Data transfer rate: 1Mbps
Case: QFN24
Mounting: SMD
Operating temperature: -40...105°C
DC supply current: 10mA
Application: USB
auf Bestellung 670 Stücke:
Lieferzeit 14-21 Tag (e)
| EVALPSIR2085TOBO1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Integrated circuits - Unclassified
Description: EVALPSIR2085TOBO1
Category: Integrated circuits - Unclassified
Description: EVALPSIR2085TOBO1
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| BSS225H6327FTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.09A; 1W; SOT89
Mounting: SMD
Power dissipation: 1W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: 90mA
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SOT89
On-state resistance: 45Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.09A; 1W; SOT89
Mounting: SMD
Power dissipation: 1W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: 90mA
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SOT89
On-state resistance: 45Ω
auf Bestellung 862 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFR3806TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 43A; 71W; DPAK
Mounting: SMD
Case: DPAK
Power dissipation: 71W
Polarisation: unipolar
Technology: HEXFET®
Drain current: 43A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Kind of package: reel
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 43A; 71W; DPAK
Mounting: SMD
Case: DPAK
Power dissipation: 71W
Polarisation: unipolar
Technology: HEXFET®
Drain current: 43A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Kind of package: reel
auf Bestellung 171 Stücke:
Lieferzeit 14-21 Tag (e)
| IPP17N25S3100AKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 250V; 13.3A; Idm: 68A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 13.3A
Pulsed drain current: 68A
Power dissipation: 107W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ T
Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 250V; 13.3A; Idm: 68A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 13.3A
Pulsed drain current: 68A
Power dissipation: 107W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ T
auf Bestellung 482 Stücke:
Lieferzeit 14-21 Tag (e)
| IPB65R190CFDAATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; D2PAK,TO263
Type of transistor: N-MOSFET
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: D2PAK; TO263
On-state resistance: 171mΩ
Mounting: SMD
Gate charge: 68nC
Kind of channel: enhancement
Polarisation: unipolar
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; D2PAK,TO263
Type of transistor: N-MOSFET
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: D2PAK; TO263
On-state resistance: 171mΩ
Mounting: SMD
Gate charge: 68nC
Kind of channel: enhancement
Polarisation: unipolar
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPB65R190C7ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; 72W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 72W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; 72W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 72W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPB65R190CFDATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPD65R190C7ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.2A; 28W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.2A
Power dissipation: 28W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.2A; 28W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.2A
Power dissipation: 28W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPL65R190E6AUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPA60R360P7SXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 26A; 22W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 22W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 26A
Version: ESD
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 26A; 22W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 22W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 26A
Version: ESD
Kind of package: tube
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
| IPD60R360P7ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 41W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 41W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 13nC
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 41W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 41W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 13nC
Version: ESD
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH