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IPD80R900P7ATMA1 IPD80R900P7ATMA1 INFINEON TECHNOLOGIES IPD80R900P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 15nC
Version: ESD
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IPU80R900P7AKMA1 IPU80R900P7AKMA1 INFINEON TECHNOLOGIES IPU80R900P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
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IPS80R900P7AKMA1 IPS80R900P7AKMA1 INFINEON TECHNOLOGIES infineon-ips80r900p7-datasheet-en.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK SL; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: IPAK SL
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of channel: enhancement
Version: ESD
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IRLB4030PBF IRLB4030PBF INFINEON TECHNOLOGIES irlb4030pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 370W
Case: TO220AB
On-state resistance: 4.3mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
Gate-source voltage: ±16V
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IRLB8314PBF IRLB8314PBF INFINEON TECHNOLOGIES irlb8314pbf.pdf?fileId=5546d462533600a4015356604d6f258f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 664A; 125W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 664A
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IRS2008SPBF IRS2008SPBF INFINEON TECHNOLOGIES IRS2008S.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO8
Kind of package: tube
Turn-off time: 180ns
Turn-on time: 750ns
Power: 625mW
Voltage class: 200V
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -600...290mA
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IRS2005STRPBF IRS2005STRPBF INFINEON TECHNOLOGIES infineon-irs2005s-m-datasheet-en.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO8
Kind of package: reel; tape
Turn-off time: 150ns
Turn-on time: 160ns
Power: 625mW
Voltage class: 200V
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -600...290mA
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IRS2003STRPBF IRS2003STRPBF INFINEON TECHNOLOGIES irs2003pbf.pdf?fileId=5546d462533600a401535675afec2780 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 200V
Turn-on time: 750ns
Turn-off time: 180ns
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IRS2007SPBF IRS2007SPBF INFINEON TECHNOLOGIES IRS2007SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 160ns
Turn-off time: 150ns
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IRS2001STRPBF INFINEON TECHNOLOGIES irs2001pbf.pdf?fileId=5546d462533600a401535675a760277e Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 130mA; Ch: 2; 10÷20V
Type of integrated circuit: driver
Mounting: SMD
Number of channels: 2
Case: SOIC8
Input voltage: 10...20V
Kind of integrated circuit: high-side; low-side
Operating temperature: -40...125°C
Output current: 0.13A
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IRS2011STRPBF INFINEON TECHNOLOGIES INFN-S-A0001467921-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1A; Ch: 2; 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 1A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
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IRS2004STRPBF INFINEON TECHNOLOGIES irs2004pbf.pdf?fileId=5546d462533600a401535675b86b2782 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 130mA; Ch: 2; MOSFET; 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 0.13A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
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IRS2093MTRPBF INFINEON TECHNOLOGIES IRS2093MTRPBF.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 10÷15VDC; Ch: 4; Amp.class: D; MLPQ48
Type of integrated circuit: audio amplifier
Mounting: SMD
Supply voltage: 10...15V DC
Number of channels: 4
Amplifier class: D
Case: MLPQ48
Kind of package: reel; tape
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IRS2005MTRPBF INFINEON TECHNOLOGIES infineon-irs2005s-m-datasheet-en.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; half-bridge; VFQFN14; 600mA; Ch: 2; MOSFET
Type of integrated circuit: driver
Mounting: SMD
Number of channels: 2
Case: VFQFN14
Turn-on time: 160ns
Power dissipation: 2.1W
Voltage class: 200V
Kind of integrated circuit: half-bridge
Topology: H-bridge
Integrated circuit features: MOSFET
Operating temperature: -40...150°C
Output current: 0.6A
Pulse fall time: 30ns
Impulse rise time: 70ns
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ICE2PCS05GXUMA1 ICE2PCS05GXUMA1 INFINEON TECHNOLOGIES INFNS16600-1.pdf?t.download=true&u=5oefqw Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; -1.5÷2A; 20÷250kHz; PG-DSO-8; boost; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -40...125°C
Frequency: 20...250kHz
Application: SMPS
Output current: -1.5...2A
Operating voltage: 11...25V DC
Duty cycle factor: 0...98.5%
Topology: boost
Input voltage: 85...265V
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ICE2PCS01GXUMA1 ICE2PCS01GXUMA1 INFINEON TECHNOLOGIES ICE2PCS01G.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; -1.5÷2A; 50÷250kHz; PG-DSO-8; boost; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Output current: -1.5...2A
Frequency: 50...250kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -40...125°C
Topology: boost
Input voltage: 80...265V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
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1ED020I12F2XUMA1 1ED020I12F2XUMA1 INFINEON TECHNOLOGIES 1ED020I12-F2.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-16-15
Output current: -2...2A
Number of channels: 1
Supply voltage: 0...28V; 4.5...5.5V
Mounting: SMD
Kind of package: reel; tape
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
Integrated circuit features: active Miller clamp; galvanically isolated
Technology: EiceDRIVER™
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1ED020I12FA2XUMA2 INFINEON TECHNOLOGIES infineon-1ed020i12-b2-datasheet-en.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-20
Output current: -2...2A
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0...28V; 4.5...5.5V
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
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1ED020I12FXUMA2 INFINEON TECHNOLOGIES infineon-1ed020i12-b2-datasheet-en.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; -2÷2A; Ch: 1
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Technology: EiceDRIVER™
Case: PG-DSO-16-15
Output current: -2...2A
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0...28V; 4.5...5.5V
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
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2ED020I12-FI 2ED020I12-FI INFINEON TECHNOLOGIES 10027685.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-side,IGBT gate driver; -2÷1A
Type of integrated circuit: driver
Topology: IGBT half-bridge
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-18
Output current: -2...1A
Number of channels: 2
Integrated circuit features: built-in comparator; built-in operational amplifier; integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0...5V; 14...18V
Voltage class: 1.2kV
Protection: undervoltage UVP
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2ED020I12F2XUMA1 INFINEON TECHNOLOGIES infineon-2ed020i12-f2-datasheet-en.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; half-bridge; PG-DSO-36; 2A; Ch: 2; MOSFET; 1W
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: half-bridge
Case: PG-DSO-36
Output current: 2A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Voltage class: 1.2kV
Pulse fall time: 50ns
Turn-on time: 170ns
Impulse rise time: 30ns
Operating temperature: -40...150°C
Maximum output current: 2A
Power dissipation: 1W
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BSP613PH6327XTSA1 BSP613PH6327XTSA1 INFINEON TECHNOLOGIES BSP613PH6327XTSA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.9A; 1.8W; PG-SOT223
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: -2.9A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Case: PG-SOT223
On-state resistance: 0.13Ω
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IPD060N03LGATMA1 IPD060N03LGATMA1 INFINEON TECHNOLOGIES IPD060N03LG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 43A; 56W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 43A
Power dissipation: 56W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Kind of channel: enhancement
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IRF7490TRPBF IRF7490TRPBF INFINEON TECHNOLOGIES irf7490pbf.pdf?fileId=5546d462533600a4015355ffaf0b1c38 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.4A; SO8
Mounting: SMD
Polarisation: unipolar
Drain current: 5.4A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SO8
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IGCM15F60GA IGCM15F60GA INFINEON TECHNOLOGIES IGCM15F60GA.pdf Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Case: PG-MDIP24
Output current: -15...15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...18.5/0...400V DC
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 29W
Technology: ClPOS™ Mini; TRENCHSTOP™
Voltage class: 600V
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IKCM15F60GAXKMA1 INFINEON TECHNOLOGIES Infineon-IKCM15F60GA-DS-v01_02-EN.pdf?fileId=5546d4624fb7fef2014fcb43b29e78c1 Category: Motor and PWM drivers
Description: IC: driver; half-bridge; DIP24; 15A; Iout max: 15A
Type of integrated circuit: driver
Kind of integrated circuit: half-bridge
Case: DIP24
Output current: 15A
Mounting: THT
Operating temperature: -40...125°C
Maximum output current: 15A
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IPD040N03LGATMA1 IPD040N03LGATMA1 INFINEON TECHNOLOGIES IPD040N03LG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 79A
Power dissipation: 94W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhancement
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ISZ040N03L5ISATMA1 ISZ040N03L5ISATMA1 INFINEON TECHNOLOGIES Infineon-ISZ040N03L5IS-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8d91c970997 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 37W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 37W
Case: PG-TDSON-8
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 17nC
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TLE7258SJXUMA1 TLE7258SJXUMA1 INFINEON TECHNOLOGIES TLE7258.pdf Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-DSO-8
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
DC supply current: 3mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 5.5...18V DC
Interface: LIN
Kind of package: reel; tape
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TLE7259-3GE TLE7259-3GE INFINEON TECHNOLOGIES TLE7259-3.pdf Category: Ethernet interfaces -integrated circuits
Description: IC: Ethernet interface; transceiver; LIN; PG-DSO-8; 5.5÷27VDC
Supply voltage: 5.5...27V DC
Interface: LIN
Operating temperature: -40...150°C
Mounting: SMD
Type of integrated circuit: Ethernet interface
DC supply current: 5mA
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
Case: PG-DSO-8
Kind of integrated circuit: transceiver
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TLE7181EMXUMA1 TLE7181EMXUMA1 INFINEON TECHNOLOGIES TLE7181EM.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge,push-pull; MOSFET gate driver; SSOP24; Ch: 4
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Number of channels: 4
Kind of output: non-inverting
Mounting: SMD
Case: SSOP24
Operating temperature: -40...150°C
Turn-off time: 200ns
Turn-on time: 250ns
Supply voltage: 7...34V DC
Topology: H-bridge; push-pull
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TLE7250VSJXUMA1 TLE7250VSJXUMA1 INFINEON TECHNOLOGIES TLE7250V.pdf Category: CAN interfaces - integrated circuits
Description: IC: CAN transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; No.of rec: 1
Type of integrated circuit: CAN transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 4.5...5.5V DC
Interface: CAN
Kind of package: reel; tape
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TLE7268SKXUMA1 TLE7268SKXUMA1 INFINEON TECHNOLOGIES TLE7268LCXUMA1.pdf Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-DSO-14
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-14
Operating temperature: -40...150°C
Number of transmitters: 2
Number of receivers: 2
Supply voltage: 5.5...40V DC
Interface: LIN
Kind of package: reel; tape
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TLE7251VSJXUMA1 TLE7251VSJXUMA1 INFINEON TECHNOLOGIES TLE7251V.pdf Category: CAN interfaces - integrated circuits
Description: IC: CAN transceiver; 3÷5.5VDC; PG-DSO-8; -40÷150°C; No.of rec: 1
Type of integrated circuit: CAN transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 3...5.5V DC
Interface: CAN
Kind of package: reel; tape
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TLE7182EMXUMA1 TLE7182EMXUMA1 INFINEON TECHNOLOGIES TLE7182EM.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge,push-pull; MOSFET gate driver; SSOP24; Ch: 4
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Number of channels: 4
Mounting: SMD
Case: SSOP24
Operating temperature: -40...150°C
Turn-off time: 200ns
Turn-on time: 250ns
Supply voltage: 7...34V DC
Topology: H-bridge; push-pull
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TLE7230RAUMA1 INFINEON TECHNOLOGIES Infineon-TLE7230R-DS-v03_04-EN.pdf?fileId=5546d4625a888733015aa2e2c9520f8a Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2A; Ch: 8; N-Channel; SMD; PG-DSO-36
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2A
Number of channels: 8
Kind of output: N-Channel
Mounting: SMD
Case: PG-DSO-36
On-state resistance: 0.8Ω
Operating temperature: -40...150°C
Application: automotive industry
Integrated circuit features: thermal protection
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
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TLE7250SJXUMA1 TLE7250SJXUMA1 INFINEON TECHNOLOGIES TLE7250.pdf Category: CAN interfaces - integrated circuits
Description: IC: CAN transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; No.of rec: 1
Type of integrated circuit: CAN transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 4.5...5.5V DC
Interface: CAN
Kind of package: reel; tape
Produkt ist nicht verfügbar
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TLE7250XSJXUMA1 TLE7250XSJXUMA1 INFINEON TECHNOLOGIES TLE7250X.pdf Category: CAN interfaces - integrated circuits
Description: IC: CAN transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; No.of rec: 1
Type of integrated circuit: CAN transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 4.5...5.5V DC
Interface: CAN
Kind of package: reel; tape
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TLE7268LCXUMA1 INFINEON TECHNOLOGIES TLE7268LCXUMA1.pdf Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-TSON-14
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-TSON-14
Operating temperature: -40...150°C
Number of transmitters: 2
Number of receivers: 2
Supply voltage: 5.5...40V DC
Interface: LIN
Kind of package: reel; tape
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TLE75602ESDXUMA1 TLE75602ESDXUMA1 INFINEON TECHNOLOGIES Infineon-TLE75602-ESD-DataSheet-v01_10-EN.pdf?fileId=5546d4626102d35a0161099b14d97907 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 330mA; Ch: 14; N-Channel; SMD; TSSOP24
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.33A
Number of channels: 14
Kind of output: N-Channel
Mounting: SMD
Case: TSSOP24
On-state resistance: 1Ω
Operating temperature: -40...150°C
Application: automotive industry
Produkt ist nicht verfügbar
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IPA037N08N3GXKSA1 IPA037N08N3GXKSA1 INFINEON TECHNOLOGIES IPA037N08N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 75A; 41W; TO220FP
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Kind of package: tube
Case: TO220FP
Polarisation: unipolar
On-state resistance: 3.7mΩ
Gate-source voltage: ±20V
Power dissipation: 41W
Drain current: 75A
Drain-source voltage: 80V
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BSP373NH6327XTSA1 BSP373NH6327XTSA1 INFINEON TECHNOLOGIES BSP373NH6327-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.8W; SOT223
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Technology: OptiMOS™
Drain current: 1.8A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SOT223
On-state resistance: 0.24Ω
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IKY75N120CS6XKSA1 IKY75N120CS6XKSA1 INFINEON TECHNOLOGIES IKY75N120CS6.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 440W; TO247PLUS-4
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 440W
Case: TO247PLUS-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 530nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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BSP125H6327XTSA1 BSP125H6327XTSA1 INFINEON TECHNOLOGIES BSP125H6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: 0.12A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SOT223
On-state resistance: 45Ω
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IPP65R099C6XKSA1 IPP65R099C6XKSA1 INFINEON TECHNOLOGIES IPP65R099C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
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IPB65R099C6ATMA1 IPB65R099C6ATMA1 INFINEON TECHNOLOGIES IPB65R099C6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™
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IPI65R099C6XKSA1 IPI65R099C6XKSA1 INFINEON TECHNOLOGIES IPI65R099C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of channel: enhancement
Technology: CoolMOS™
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IPL65R099C7AUMA1 IPL65R099C7AUMA1 INFINEON TECHNOLOGIES IPL65R099C7-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21A; 128W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Power dissipation: 128W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhancement
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IPDQ65R099CFD7AXTMA1 INFINEON TECHNOLOGIES Infineon-IPDQ65R099CFD7A-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186cb8935b833b7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 650V; 29A; 186W; automotive industry
Type of transistor: N-MOSFET
Drain-source voltage: 650V
Drain current: 29A
Power dissipation: 186W
Gate-source voltage: 20V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 39nC
Kind of channel: enhancement
Application: automotive industry
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TD122N22KOF TD122N22KOF INFINEON TECHNOLOGIES TD122N22KOF.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 122A; BG-PB34-1; Ufmax: 1.95V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 122A
Case: BG-PB34-1
Max. forward voltage: 1.95V
Max. forward impulse current: 3.3kA
Gate current: 200mA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 220A
Produkt ist nicht verfügbar
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BSR302NL6327HTSA1 BSR302NL6327HTSA1 INFINEON TECHNOLOGIES BSR302NL6327HTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.7A; 0.5W; SC59
On-state resistance: 36mΩ
Mounting: SMD
Power dissipation: 0.5W
Polarisation: unipolar
Technology: OptiMOS™ 2
Drain current: 3.7A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SC59
Produkt ist nicht verfügbar
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IPA032N06N3GXKSA1 IPA032N06N3GXKSA1 INFINEON TECHNOLOGIES IPA032N06N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 41W; TO220FP
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Power dissipation: 41W
Drain-source voltage: 60V
Drain current: 84A
Case: TO220FP
Kind of channel: enhancement
Technology: OptiMOS™ 3
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IRG4BC40W-STRRP IRG4BC40W-STRRP INFINEON TECHNOLOGIES IRG4BC40W-STRRP.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 160W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 160W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Produkt ist nicht verfügbar
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S29AL016J70TFI010 S29AL016J70TFI010 INFINEON TECHNOLOGIES Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; TSOP48; parallel
Mounting: SMD
Type of integrated circuit: FLASH memory
Operating temperature: -40...85°C
Memory: 16Mb FLASH
Kind of interface: parallel
Case: TSOP48
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Kind of memory: NOR
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IM393M6FXKLA1 IM393M6FXKLA1 INFINEON TECHNOLOGIES Infineon-IM393-M6F-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a947c0278da Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; SIP34x15; 10A
Type of integrated circuit: driver
Topology: IGBT three-phase bridge
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: CIPOS™ Tiny
Case: SIP34x15
Output current: 10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...16.5/0...450V DC
Frequency: 20kHz
Kind of package: tube
Voltage class: 600V
Protection: undervoltage UVP
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IM393S6FXKLA1 INFINEON TECHNOLOGIES Infineon-IM393-S6F-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a9d808378dd Infineon-IM393-S6F-DataSheet-v02_01-EN.pdf?fileId=5546d462696dbf1201699a9d808378dd Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; SIP34x15; 6A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: SIP34x15
Output current: 6A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Voltage class: 600V
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...16.5/0...450V DC
Topology: IGBT three-phase bridge
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IM393S6E3XKLA1 INFINEON TECHNOLOGIES Infineon-IM393-S6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a9d912478e4 Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 6A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 6A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Voltage class: 600V
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...16.5/0...450V DC
Topology: IGBT three-phase bridge
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IM393L6E3XKLA1 INFINEON TECHNOLOGIES Infineon-IM393-L6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a8b350f78c7 Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 15A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Voltage class: 600V
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...16.5/0...450V DC
Topology: IGBT three-phase bridge
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IM393L6EXKLA1 INFINEON TECHNOLOGIES Infineon-IM393-L6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a8b350f78c7 Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 15A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Voltage class: 600V
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...16.5/0...450V DC
Topology: IGBT three-phase bridge
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IM393M6E2XKLA1 INFINEON TECHNOLOGIES Infineon-IM393-M6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a94732278d5 Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 10A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Voltage class: 600V
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...16.5/0...450V DC
Topology: IGBT three-phase bridge
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IPD80R900P7ATMA1 IPD80R900P7.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 15nC
Version: ESD
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IPU80R900P7AKMA1 IPU80R900P7.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
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IPS80R900P7AKMA1 infineon-ips80r900p7-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 45W; IPAK SL; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 45W
Case: IPAK SL
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 15nC
Kind of channel: enhancement
Version: ESD
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IRLB4030PBF irlb4030pbf.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 370W
Case: TO220AB
On-state resistance: 4.3mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
Gate-source voltage: ±16V
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IRLB8314PBF irlb8314pbf.pdf?fileId=5546d462533600a4015356604d6f258f
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 664A; 125W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 664A
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IRS2008SPBF IRS2008S.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO8
Kind of package: tube
Turn-off time: 180ns
Turn-on time: 750ns
Power: 625mW
Voltage class: 200V
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -600...290mA
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IRS2005STRPBF infineon-irs2005s-m-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V DC
Number of channels: 2
Case: SO8
Kind of package: reel; tape
Turn-off time: 150ns
Turn-on time: 160ns
Power: 625mW
Voltage class: 200V
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -600...290mA
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IRS2003STRPBF irs2003pbf.pdf?fileId=5546d462533600a401535675afec2780
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 200V
Turn-on time: 750ns
Turn-off time: 180ns
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IRS2007SPBF IRS2007SPBF.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 160ns
Turn-off time: 150ns
Produkt ist nicht verfügbar
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IRS2001STRPBF irs2001pbf.pdf?fileId=5546d462533600a401535675a760277e
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 130mA; Ch: 2; 10÷20V
Type of integrated circuit: driver
Mounting: SMD
Number of channels: 2
Case: SOIC8
Input voltage: 10...20V
Kind of integrated circuit: high-side; low-side
Operating temperature: -40...125°C
Output current: 0.13A
Produkt ist nicht verfügbar
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IRS2011STRPBF INFN-S-A0001467921-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1A; Ch: 2; 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 1A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Produkt ist nicht verfügbar
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IRS2004STRPBF irs2004pbf.pdf?fileId=5546d462533600a401535675b86b2782
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 130mA; Ch: 2; MOSFET; 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 0.13A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Produkt ist nicht verfügbar
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IRS2093MTRPBF IRS2093MTRPBF.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 10÷15VDC; Ch: 4; Amp.class: D; MLPQ48
Type of integrated circuit: audio amplifier
Mounting: SMD
Supply voltage: 10...15V DC
Number of channels: 4
Amplifier class: D
Case: MLPQ48
Kind of package: reel; tape
Produkt ist nicht verfügbar
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IRS2005MTRPBF infineon-irs2005s-m-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; half-bridge; VFQFN14; 600mA; Ch: 2; MOSFET
Type of integrated circuit: driver
Mounting: SMD
Number of channels: 2
Case: VFQFN14
Turn-on time: 160ns
Power dissipation: 2.1W
Voltage class: 200V
Kind of integrated circuit: half-bridge
Topology: H-bridge
Integrated circuit features: MOSFET
Operating temperature: -40...150°C
Output current: 0.6A
Pulse fall time: 30ns
Impulse rise time: 70ns
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ICE2PCS05GXUMA1 INFNS16600-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; -1.5÷2A; 20÷250kHz; PG-DSO-8; boost; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -40...125°C
Frequency: 20...250kHz
Application: SMPS
Output current: -1.5...2A
Operating voltage: 11...25V DC
Duty cycle factor: 0...98.5%
Topology: boost
Input voltage: 85...265V
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ICE2PCS01GXUMA1 ICE2PCS01G.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; -1.5÷2A; 50÷250kHz; PG-DSO-8; boost; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Output current: -1.5...2A
Frequency: 50...250kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -40...125°C
Topology: boost
Input voltage: 80...265V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
auf Bestellung 141 Stücke:
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1ED020I12F2XUMA1 1ED020I12-F2.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-16-15
Output current: -2...2A
Number of channels: 1
Supply voltage: 0...28V; 4.5...5.5V
Mounting: SMD
Kind of package: reel; tape
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
Integrated circuit features: active Miller clamp; galvanically isolated
Technology: EiceDRIVER™
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1ED020I12FA2XUMA2 infineon-1ed020i12-b2-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-20
Output current: -2...2A
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0...28V; 4.5...5.5V
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
Produkt ist nicht verfügbar
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1ED020I12FXUMA2 infineon-1ed020i12-b2-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; -2÷2A; Ch: 1
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Technology: EiceDRIVER™
Case: PG-DSO-16-15
Output current: -2...2A
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0...28V; 4.5...5.5V
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
Produkt ist nicht verfügbar
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2ED020I12-FI 10027685.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-side,IGBT gate driver; -2÷1A
Type of integrated circuit: driver
Topology: IGBT half-bridge
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-18
Output current: -2...1A
Number of channels: 2
Integrated circuit features: built-in comparator; built-in operational amplifier; integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0...5V; 14...18V
Voltage class: 1.2kV
Protection: undervoltage UVP
Produkt ist nicht verfügbar
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2ED020I12F2XUMA1 infineon-2ed020i12-f2-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; half-bridge; PG-DSO-36; 2A; Ch: 2; MOSFET; 1W
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: half-bridge
Case: PG-DSO-36
Output current: 2A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Voltage class: 1.2kV
Pulse fall time: 50ns
Turn-on time: 170ns
Impulse rise time: 30ns
Operating temperature: -40...150°C
Maximum output current: 2A
Power dissipation: 1W
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BSP613PH6327XTSA1 BSP613PH6327XTSA1-dte.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.9A; 1.8W; PG-SOT223
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: -2.9A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Case: PG-SOT223
On-state resistance: 0.13Ω
auf Bestellung 120 Stücke:
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IPD060N03LGATMA1 IPD060N03LG-DTE.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 43A; 56W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 43A
Power dissipation: 56W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 283 Stücke:
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IRF7490TRPBF irf7490pbf.pdf?fileId=5546d462533600a4015355ffaf0b1c38
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.4A; SO8
Mounting: SMD
Polarisation: unipolar
Drain current: 5.4A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SO8
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IGCM15F60GA IGCM15F60GA.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Case: PG-MDIP24
Output current: -15...15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...18.5/0...400V DC
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 29W
Technology: ClPOS™ Mini; TRENCHSTOP™
Voltage class: 600V
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IKCM15F60GAXKMA1 Infineon-IKCM15F60GA-DS-v01_02-EN.pdf?fileId=5546d4624fb7fef2014fcb43b29e78c1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; half-bridge; DIP24; 15A; Iout max: 15A
Type of integrated circuit: driver
Kind of integrated circuit: half-bridge
Case: DIP24
Output current: 15A
Mounting: THT
Operating temperature: -40...125°C
Maximum output current: 15A
Produkt ist nicht verfügbar
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IPD040N03LGATMA1 IPD040N03LG-DTE.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 79A
Power dissipation: 94W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhancement
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ISZ040N03L5ISATMA1 Infineon-ISZ040N03L5IS-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8d91c970997
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 37W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 37W
Case: PG-TDSON-8
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 17nC
Produkt ist nicht verfügbar
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TLE7258SJXUMA1 TLE7258.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-DSO-8
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
DC supply current: 3mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 5.5...18V DC
Interface: LIN
Kind of package: reel; tape
auf Bestellung 2394 Stücke:
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TLE7259-3GE TLE7259-3.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Ethernet interfaces -integrated circuits
Description: IC: Ethernet interface; transceiver; LIN; PG-DSO-8; 5.5÷27VDC
Supply voltage: 5.5...27V DC
Interface: LIN
Operating temperature: -40...150°C
Mounting: SMD
Type of integrated circuit: Ethernet interface
DC supply current: 5mA
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
Case: PG-DSO-8
Kind of integrated circuit: transceiver
auf Bestellung 2299 Stücke:
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TLE7181EMXUMA1 TLE7181EM.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge,push-pull; MOSFET gate driver; SSOP24; Ch: 4
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Number of channels: 4
Kind of output: non-inverting
Mounting: SMD
Case: SSOP24
Operating temperature: -40...150°C
Turn-off time: 200ns
Turn-on time: 250ns
Supply voltage: 7...34V DC
Topology: H-bridge; push-pull
Produkt ist nicht verfügbar
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TLE7250VSJXUMA1 TLE7250V.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: CAN transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; No.of rec: 1
Type of integrated circuit: CAN transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 4.5...5.5V DC
Interface: CAN
Kind of package: reel; tape
Produkt ist nicht verfügbar
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TLE7268SKXUMA1 TLE7268LCXUMA1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-DSO-14
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-DSO-14
Operating temperature: -40...150°C
Number of transmitters: 2
Number of receivers: 2
Supply voltage: 5.5...40V DC
Interface: LIN
Kind of package: reel; tape
Produkt ist nicht verfügbar
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TLE7251VSJXUMA1 TLE7251V.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: CAN transceiver; 3÷5.5VDC; PG-DSO-8; -40÷150°C; No.of rec: 1
Type of integrated circuit: CAN transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 3...5.5V DC
Interface: CAN
Kind of package: reel; tape
Produkt ist nicht verfügbar
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TLE7182EMXUMA1 TLE7182EM.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge,push-pull; MOSFET gate driver; SSOP24; Ch: 4
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Number of channels: 4
Mounting: SMD
Case: SSOP24
Operating temperature: -40...150°C
Turn-off time: 200ns
Turn-on time: 250ns
Supply voltage: 7...34V DC
Topology: H-bridge; push-pull
Produkt ist nicht verfügbar
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TLE7230RAUMA1 Infineon-TLE7230R-DS-v03_04-EN.pdf?fileId=5546d4625a888733015aa2e2c9520f8a
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2A; Ch: 8; N-Channel; SMD; PG-DSO-36
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2A
Number of channels: 8
Kind of output: N-Channel
Mounting: SMD
Case: PG-DSO-36
On-state resistance: 0.8Ω
Operating temperature: -40...150°C
Application: automotive industry
Integrated circuit features: thermal protection
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
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TLE7250SJXUMA1 TLE7250.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: CAN transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; No.of rec: 1
Type of integrated circuit: CAN transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 4.5...5.5V DC
Interface: CAN
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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TLE7250XSJXUMA1 TLE7250X.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: CAN transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; No.of rec: 1
Type of integrated circuit: CAN transceiver
Mounting: SMD
Case: PG-DSO-8
Operating temperature: -40...150°C
DC supply current: 60mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 4.5...5.5V DC
Interface: CAN
Kind of package: reel; tape
Produkt ist nicht verfügbar
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TLE7268LCXUMA1 TLE7268LCXUMA1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-TSON-14
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Mounting: SMD
Case: PG-TSON-14
Operating temperature: -40...150°C
Number of transmitters: 2
Number of receivers: 2
Supply voltage: 5.5...40V DC
Interface: LIN
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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TLE75602ESDXUMA1 Infineon-TLE75602-ESD-DataSheet-v01_10-EN.pdf?fileId=5546d4626102d35a0161099b14d97907
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 330mA; Ch: 14; N-Channel; SMD; TSSOP24
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.33A
Number of channels: 14
Kind of output: N-Channel
Mounting: SMD
Case: TSSOP24
On-state resistance: 1Ω
Operating temperature: -40...150°C
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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IPA037N08N3GXKSA1 IPA037N08N3G-DTE.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 75A; 41W; TO220FP
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Kind of package: tube
Case: TO220FP
Polarisation: unipolar
On-state resistance: 3.7mΩ
Gate-source voltage: ±20V
Power dissipation: 41W
Drain current: 75A
Drain-source voltage: 80V
auf Bestellung 18 Stücke:
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BSP373NH6327XTSA1 BSP373NH6327-DTE.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.8W; SOT223
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Technology: OptiMOS™
Drain current: 1.8A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SOT223
On-state resistance: 0.24Ω
auf Bestellung 1008 Stücke:
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IKY75N120CS6XKSA1 IKY75N120CS6.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 440W; TO247PLUS-4
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 440W
Case: TO247PLUS-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 530nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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BSP125H6327XTSA1 BSP125H6327XTSA1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.12A; 1.8W; SOT223
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: 0.12A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SOT223
On-state resistance: 45Ω
auf Bestellung 745 Stücke:
Lieferzeit 14-21 Tag (e)
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IPP65R099C6XKSA1 IPP65R099C6-DTE.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
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IPB65R099C6ATMA1 IPB65R099C6-DTE.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
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IPI65R099C6XKSA1 IPI65R099C6-DTE.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
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IPL65R099C7AUMA1 IPL65R099C7-DTE.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21A; 128W; PG-VSON-4
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Power dissipation: 128W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPDQ65R099CFD7AXTMA1 Infineon-IPDQ65R099CFD7A-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186cb8935b833b7
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 650V; 29A; 186W; automotive industry
Type of transistor: N-MOSFET
Drain-source voltage: 650V
Drain current: 29A
Power dissipation: 186W
Gate-source voltage: 20V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 39nC
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 750 Stücke:
Lieferzeit 14-21 Tag (e)
Mindestbestellmenge: 750 Stücke
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TD122N22KOF TD122N22KOF.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 122A; BG-PB34-1; Ufmax: 1.95V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 122A
Case: BG-PB34-1
Max. forward voltage: 1.95V
Max. forward impulse current: 3.3kA
Gate current: 200mA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 220A
Produkt ist nicht verfügbar
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BSR302NL6327HTSA1 BSR302NL6327HTSA1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.7A; 0.5W; SC59
On-state resistance: 36mΩ
Mounting: SMD
Power dissipation: 0.5W
Polarisation: unipolar
Technology: OptiMOS™ 2
Drain current: 3.7A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SC59
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
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IPA032N06N3GXKSA1 IPA032N06N3G-DTE.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 41W; TO220FP
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Power dissipation: 41W
Drain-source voltage: 60V
Drain current: 84A
Case: TO220FP
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IRG4BC40W-STRRP IRG4BC40W-STRRP.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 160W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 160W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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S29AL016J70TFI010 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 16MbFLASH; CFI,parallel; TSOP48; parallel
Mounting: SMD
Type of integrated circuit: FLASH memory
Operating temperature: -40...85°C
Memory: 16Mb FLASH
Kind of interface: parallel
Case: TSOP48
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Produkt ist nicht verfügbar
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IM393M6FXKLA1 Infineon-IM393-M6F-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a947c0278da
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; SIP34x15; 10A
Type of integrated circuit: driver
Topology: IGBT three-phase bridge
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: CIPOS™ Tiny
Case: SIP34x15
Output current: 10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...16.5/0...450V DC
Frequency: 20kHz
Kind of package: tube
Voltage class: 600V
Protection: undervoltage UVP
Produkt ist nicht verfügbar
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IM393S6FXKLA1 Infineon-IM393-S6F-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a9d808378dd Infineon-IM393-S6F-DataSheet-v02_01-EN.pdf?fileId=5546d462696dbf1201699a9d808378dd
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; SIP34x15; 6A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: SIP34x15
Output current: 6A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Voltage class: 600V
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...16.5/0...450V DC
Topology: IGBT three-phase bridge
Produkt ist nicht verfügbar
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IM393S6E3XKLA1 Infineon-IM393-S6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a9d912478e4
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 6A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 6A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Voltage class: 600V
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...16.5/0...450V DC
Topology: IGBT three-phase bridge
Produkt ist nicht verfügbar
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IM393L6E3XKLA1 Infineon-IM393-L6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a8b350f78c7
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 15A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Voltage class: 600V
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...16.5/0...450V DC
Topology: IGBT three-phase bridge
Produkt ist nicht verfügbar
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IM393L6EXKLA1 Infineon-IM393-L6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a8b350f78c7
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 15A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Voltage class: 600V
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...16.5/0...450V DC
Topology: IGBT three-phase bridge
Produkt ist nicht verfügbar
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IM393M6E2XKLA1 Infineon-IM393-M6E-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a94732278d5
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; CIPOS™ Tiny; DIP34x15; 10A
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: DIP34x15
Output current: 10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Protection: undervoltage UVP
Technology: CIPOS™ Tiny
Voltage class: 600V
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...16.5/0...450V DC
Topology: IGBT three-phase bridge
Produkt ist nicht verfügbar
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