Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (129167) > Seite 2078 nach 2153
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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BC850CWH6327XTSA1 | INFINEON TECHNOLOGIES |
 Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 100mA; 250mW; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.25W Case: SOT323 Current gain: 420 Mounting: SMD Frequency: 250MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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PVT412APBF | INFINEON TECHNOLOGIES |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; 25mA; PV; 6Ω; THT; DIP6 Type of relay: solid state Contacts configuration: SPST-NO Control voltage: 1.2V DC Control current max.: 25mA On-state resistance: 6Ω Mounting: THT Case: DIP6 Body dimensions: 8.63x6.47x3.42mm Leads: for PCB Insulation voltage: 4kV Kind of output: MOSFET Operating temperature: -40...85°C Manufacturer series: PV |
auf Bestellung 3859 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH |
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PVT322PBF | INFINEON TECHNOLOGIES |
Category: One Phase Solid State Relays Description: Relay: solid state; DPST-NO; Ucntrl: 1.2VDC; Icntrl: 2÷25mA; 500mA Type of relay: solid state Contacts configuration: DPST-NO Control voltage: 1.2V DC Control current: 2...25mA Max. operating current: 0.5A Switched voltage: 0...250V AC; 0...250V DC Manufacturer series: PVT322PbF Relay variant: MOSFET On-state resistance: 10Ω Mounting: THT Case: DIP8 Operate time: 3ms Release time: 0.5ms Operating temperature: -40...85°C |
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IRFI540NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 42W; TO220FP Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 18A Power dissipation: 42W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 52mΩ Mounting: THT Gate charge: 62.7nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 633 Stücke: Lieferzeit 14-21 Tag (e) |
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S29AL008J70TFI020 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; TSSOP48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 8Mb FLASH Operating voltage: 2.7...3.6V Case: TSSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Interface: CFI; parallel |
auf Bestellung 502 Stücke: Lieferzeit 14-21 Tag (e) |
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| XMC DIGITAL POWER EXPLORER KIT | INFINEON TECHNOLOGIES |
Category: Development kits - others Description: Dev.kit: ARM Infineon; XMC1300,XMC4200; Add-on connectors: 1 Components: BSC0924ND; IRS2011S; XMC1300; XMC4200 Kind of architecture: Cortex M4; Cortex M0 Number of add-on connectors: 1 Kit contents: base board with buck converter; board with XMC1300 microcontroller; board with XMC4200 microcontroller Connection: pin strips; USB B micro Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USB; USIC x2 Family: XMC1300; XMC4200 Type of development kit: ARM Infineon |
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| CY3210-MINIPROG1 | INFINEON TECHNOLOGIES |
Category: Development kits - others Description: Dev.kit: Cypress; Software: included Type of development kit: Cypress Kit contents: board with DIP 28 socket; CY8C29466-24PXI microcontroller; USB cable; USB programmer Associated circuits: PSoC Programmers and development kits features: ISP programmer Interface: USB Software: included |
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XC822MT1FRIAAFXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: microcontroller 8051; Interface: I2C,SPI,UART; DALI; -40÷85°C Type of integrated circuit: microcontroller 8051 Case: PG-TSSOP-16 Mounting: SMD Interface: I2C; SPI; UART Kind of core: 8-bit Supply voltage: 2.5...5.5V DC Operating temperature: -40...85°C Integrated circuit features: LEDTSCU; MDU; RTC; watchdog Clock frequency: 24MHz Memory: 500B SRAM; 4kB FLASH Number of input capture channels: 1 Number of PWM channels: 1 Communictions protocol: DALI Number of 16bit timers: 3 Number of 10bit A/D converters: 4 Number of output compare channels: 1 |
auf Bestellung 167 Stücke: Lieferzeit 14-21 Tag (e) |
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CY8C5267AXI-LP051 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: PSoC microcontroller; 67MHz; TQFP100; 32kBSRAM,128kBFLASH Type of integrated circuit: PSoC microcontroller Mounting: SMD Case: TQFP100 Number of inputs/outputs: 72 Supply voltage: 1.71...5.5V DC Operating temperature: -40...85°C Integrated circuit features: watchdog Clock frequency: 67MHz Kind of core: 32-bit Memory: 32kB SRAM; 128kB FLASH Interface: GPIO; I2C; SPI; UART; USB |
auf Bestellung 85 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7343TRPBF | INFINEON TECHNOLOGIES |
 Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; 55/-55V; 4.7/-3.4A; 2W; SO8 Type of transistor: N/P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55/-55V Drain current: 4.7/-3.4A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 50/105mΩ Mounting: SMD Kind of package: reel Kind of channel: enhancement |
auf Bestellung 6961 Stücke: Lieferzeit 14-21 Tag (e) |
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IRS20957STRPBF | INFINEON TECHNOLOGIES |
Category: RTV - audio integrated circuits Description: IC: audio amplifier; 10÷15VDC; Ch: 1; Amp.class: D; SO16 Type of integrated circuit: audio amplifier Mounting: SMD Supply voltage: 10...15V DC Number of channels: 1 Amplifier class: D Case: SO16 Kind of package: reel; tape |
auf Bestellung 107 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7316TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -4.9A; 2W; SO8 Type of transistor: P-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.9A Power dissipation: 2W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
auf Bestellung 686 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS83PH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -0.33A; 0.36W; PG-SOT23 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -60V Drain current: -330mA Power dissipation: 0.36W Case: PG-SOT23 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Kind of package: reel Kind of channel: enhancement |
auf Bestellung 7708 Stücke: Lieferzeit 14-21 Tag (e) |
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IRL6372TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.1A; 2.5W; SO8 Case: SO8 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Technology: HEXFET® Features of semiconductor devices: logic level Type of transistor: N-MOSFET x2 Drain-source voltage: 30V Drain current: 8.1A On-state resistance: 17.9mΩ Power dissipation: 2.5W Gate-source voltage: ±12V Polarisation: unipolar |
auf Bestellung 828 Stücke: Lieferzeit 14-21 Tag (e) |
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CY7C1021DV33-10ZSXI | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 3÷3.6V; 10ns; TSOP44 II Case: TSOP44 II Mounting: SMD Memory: 1Mb SRAM Kind of interface: parallel Memory organisation: 64kx16bit Operating voltage: 3...3.6V Kind of memory: SRAM Access time: 10ns Type of integrated circuit: SRAM memory |
auf Bestellung 743 Stücke: Lieferzeit 14-21 Tag (e) |
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IR2127SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side Case: SO8 Output current: -420...200mA Power: 625mW Number of channels: 1 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 0.2µs Turn-off time: 150ns |
auf Bestellung 186 Stücke: Lieferzeit 14-21 Tag (e) |
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IR2127PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side Case: DIP8 Output current: -420...200mA Power: 1W Number of channels: 1 Supply voltage: 12...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 0.2µs Turn-off time: 150ns |
auf Bestellung 138 Stücke: Lieferzeit 14-21 Tag (e) |
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IR21271SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side Case: SO8 Output current: -420...200mA Power: 625mW Number of channels: 1 Supply voltage: 9...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 150ns Turn-off time: 150ns |
auf Bestellung 95 Stücke: Lieferzeit 14-21 Tag (e) |
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IR21271PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side Case: DIP8 Output current: -420...200mA Power: 1W Number of channels: 1 Supply voltage: 9...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 150ns Turn-off time: 150ns |
auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLR8726TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 340A; 75W; DPAK Mounting: SMD Pulsed drain current: 340A Power dissipation: 75W Polarisation: unipolar Technology: HEXFET® Drain current: 61A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: DPAK On-state resistance: 5.8mΩ |
auf Bestellung 1776 Stücke: Lieferzeit 14-21 Tag (e) |
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IR2128SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side Case: SO8 Output current: -420...200mA Power: 625mW Number of channels: 1 Supply voltage: 12...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 0.2µs Turn-off time: 150ns |
auf Bestellung 74 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR2905ZTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 42A; Idm: 240A; 110W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 42A Pulsed drain current: 240A Power dissipation: 110W Case: DPAK Gate-source voltage: ±20V On-state resistance: 14.5mΩ Mounting: SMD Gate charge: 44nC Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRFB4127PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 76A; 375W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 76A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: THT Gate charge: 0.1µC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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IRF7324TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -9A; 2W; SO8 Type of transistor: P-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -9A Power dissipation: 2W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BAV199E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 0.25A; 1.5us; SOT23; Ufmax: 1.25V; 330mW Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.25A Reverse recovery time: 1.5µs Semiconductor structure: double series Features of semiconductor devices: fast switching Case: SOT23 Max. forward voltage: 1.25V Power dissipation: 0.33W Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BAV199E6433HTMA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 0.25A; 1.5us; SOT23; Ufmax: 1.25V; 330mW Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.25A Reverse recovery time: 1.5µs Semiconductor structure: double series Features of semiconductor devices: fast switching Case: SOT23 Max. forward voltage: 1.25V Power dissipation: 0.33W Kind of package: reel; tape Max. forward impulse current: 4.5A Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BFP760H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; SiGe: C; bipolar; HBT,RF; 13V; 70mA; 0.24W; SOT343 Type of transistor: NPN Polarisation: bipolar Kind of transistor: HBT; RF Collector-emitter voltage: 13V Collector current: 70mA Power dissipation: 0.24W Case: SOT343 Current gain: 160...400 Mounting: SMD Frequency: 45GHz Technology: SiGe:C Kind of package: reel; tape |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFB4227PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 65A; 190W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 65A Power dissipation: 190W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 26mΩ Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 109 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFB4227PBFXKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 65A; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 65A Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7424TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -11A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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ICE2HS01GXUMA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; resonant mode controller; 6mA; 0.03÷1MHz; PG-DSO-20 Output current: 6mA Mounting: SMD Operating temperature: -25...125°C Kind of integrated circuit: resonant mode controller Frequency: 30kHz...1MHz Operating voltage: 11...18V DC Topology: push-pull Type of integrated circuit: PMIC Application: SMPS Case: PG-DSO-20 |
auf Bestellung 987 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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SPP11N80C3 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 156W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 11A Power dissipation: 156W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.45Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 135 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP3006PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 375W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 195A Power dissipation: 375W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 2.1mΩ Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BTS50085-1TMA | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 38A; Ch: 1; N-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 38A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: PG-TO220-7-4 On-state resistance: 7.2mΩ Supply voltage: 5...58V DC Technology: High Current PROFET |
auf Bestellung 96 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BTS441RG | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; TO263-5 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 17A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: TO263-5 On-state resistance: 15mΩ Technology: Classic PROFET Output voltage: 4.75...43V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BTS6133D | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 33A; Ch: 1; N-Channel; SMD; TO252-5 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 33A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: TO252-5 Supply voltage: 5.5...38V DC Technology: High Current PROFET On-state resistance: 8mΩ |
auf Bestellung 2503 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP752R | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.3A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 0.15Ω Technology: Classic PROFET Output voltage: 52V |
auf Bestellung 630 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS4300SGA | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 0.4A; Ch: 1; N-Channel; SMD; SO8 Number of channels: 1 Output current: 0.4A Supply voltage: 5...34V DC Type of integrated circuit: power switch Kind of output: N-Channel Technology: Classic PROFET Case: SO8 Kind of integrated circuit: high-side On-state resistance: 0.3Ω Mounting: SMD |
auf Bestellung 2347 Stücke: Lieferzeit 14-21 Tag (e) |
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IPA70R360P7SXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; Idm: 34A; 26.5W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 700V Drain current: 7.5A Power dissipation: 26.5W Case: TO220FP Gate-source voltage: ±16V On-state resistance: 0.36Ω Mounting: THT Kind of channel: enhancement Pulsed drain current: 34A Version: ESD Kind of package: tube |
auf Bestellung 34 Stücke: Lieferzeit 14-21 Tag (e) |
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IPAN70R360P7SXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 26.5W; TO220FP; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 700V Drain current: 7.5A Power dissipation: 26.5W Case: TO220FP Gate-source voltage: ±16V On-state resistance: 0.36Ω Mounting: THT Kind of channel: enhancement Gate charge: 16.4nC Version: ESD Kind of package: tube |
auf Bestellung 280 Stücke: Lieferzeit 14-21 Tag (e) |
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IPN70R360P7SATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 7.2W; PG-SOT223; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 700V Drain current: 7.5A Power dissipation: 7.2W Case: PG-SOT223 Gate-source voltage: ±16V On-state resistance: 0.36Ω Mounting: SMD Kind of channel: enhancement Gate charge: 16.4nC Version: ESD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IPS70R360P7SAKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; IPAK SL; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 700V Drain current: 7.5A Power dissipation: 59.5W Case: IPAK SL Gate-source voltage: ±16V On-state resistance: 0.36Ω Mounting: THT Kind of channel: enhancement Gate charge: 16.4nC Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BSP129H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 240V; 0.05A; 1.8W; SOT223 Type of transistor: N-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: 240V Drain current: 50mA Power dissipation: 1.8W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 6.5Ω Mounting: SMD Kind of channel: depletion |
auf Bestellung 750 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BSD223PH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-363 Type of transistor: P-MOSFET Technology: OptiMOS™ P Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.39A Power dissipation: 0.25W Case: PG-SOT-363 Gate-source voltage: ±12V On-state resistance: 1.2Ω Mounting: SMD Kind of channel: enhancement |
auf Bestellung 1468 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BSL207SPH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 2W; PG-TSOP-6 Type of transistor: P-MOSFET Technology: OptiMOS™ P Polarisation: unipolar Drain-source voltage: -20V Drain current: -6A Power dissipation: 2W Case: PG-TSOP-6 Gate-source voltage: ±12V On-state resistance: 41mΩ Mounting: SMD Kind of channel: enhancement |
auf Bestellung 7750 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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SPD50P03LGBTMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -50A; 150W; PG-TO252-5 Case: PG-TO252-5 Mounting: SMD On-state resistance: 7mΩ Power dissipation: 150W Polarisation: unipolar Technology: OptiMOS™ P Drain current: -50A Kind of channel: enhancement Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±20V |
auf Bestellung 727 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BSL307SPH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -5.5A; 2W; PG-TSOP-6 Type of transistor: P-MOSFET Technology: OptiMOS™ P Polarisation: unipolar Drain-source voltage: -30V Drain current: -5.5A Power dissipation: 2W Case: PG-TSOP-6 Gate-source voltage: ±20V On-state resistance: 43mΩ Mounting: SMD Kind of channel: enhancement |
auf Bestellung 1389 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BSO207PHXUMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5A; 1.6W; PG-DSO-8 Type of transistor: P-MOSFET Technology: OptiMOS™ P Polarisation: unipolar Drain-source voltage: -20V Drain current: -5A Power dissipation: 1.6W Case: PG-DSO-8 Gate-source voltage: ±12V On-state resistance: 45mΩ Mounting: SMD Kind of channel: enhancement |
auf Bestellung 2211 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IPD122N10N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Case: DPAK Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2178 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRF40R207 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 64A; 83W; DPAK Mounting: SMD Power dissipation: 83W Gate charge: 45nC Polarisation: unipolar Technology: HEXFET® Drain current: 64A Kind of channel: enhancement Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: DPAK On-state resistance: 5.1mΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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CY15B004Q-SXE | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuits Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 3÷3.6VDC; 16MHz; SO8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Mounting: SMD Supply voltage: 3...3.6V DC Operating temperature: -40...125°C Clock frequency: 16MHz Memory: 4kb FRAM Kind of interface: serial Memory organisation: 512x8bit Case: SO8 Interface: SPI |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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ICE3PCS03GXUMA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PFC controller; 21÷100kHz; PG-DSO-8; boost; 90÷270V; SMPS Type of integrated circuit: PMIC Kind of integrated circuit: PFC controller Frequency: 21...100kHz Case: PG-DSO-8 Mounting: SMD Operating temperature: -25...125°C Topology: boost Input voltage: 90...270V Duty cycle factor: 0...98.5% Application: SMPS Operating voltage: 11...25V DC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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ICE3PCS01G | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PFC controller; 21÷100kHz; PG-DSO-14; boost; 90÷270V Type of integrated circuit: PMIC Kind of integrated circuit: PFC controller Frequency: 21...100kHz Case: PG-DSO-14 Mounting: SMD Operating temperature: -25...125°C Topology: boost Input voltage: 90...270V Duty cycle factor: 0...98.5% Application: SMPS Operating voltage: 11...25V DC |
auf Bestellung 1230 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRFR9120NTRLPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -6.5A; 39W; DPAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -6.5A Power dissipation: 39W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRLR120NTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 39W; DPAK Mounting: SMD Power dissipation: 39W Polarisation: unipolar Technology: HEXFET® Features of semiconductor devices: logic level Drain current: 11A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Kind of package: reel Case: DPAK |
auf Bestellung 3682 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| CY62148EV30LL-45BVXIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 45ns; VFBGA36; parallel Mounting: SMD Kind of interface: parallel Kind of package: reel; tape Type of integrated circuit: SRAM memory Kind of memory: SRAM Case: VFBGA36 Operating temperature: -40...85°C Access time: 45ns Supply voltage: 2.2...3.6V DC Memory: 4Mb SRAM Memory organisation: 512kx8bit |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| CY62148EV30LL-45ZSXIT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 45ns; TSOP32 II; parallel Mounting: SMD Kind of interface: parallel Kind of package: reel; tape Type of integrated circuit: SRAM memory Kind of memory: SRAM Case: TSOP32 II Operating temperature: -40...85°C Access time: 45ns Supply voltage: 2.2...3.6V DC Memory: 4Mb SRAM Memory organisation: 512kx8bit |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| BC849BE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 30V; 100mA; 330mW; SC59 Collector current: 0.1A Mounting: SMD Collector-emitter voltage: 30V Power dissipation: 0.33W Polarisation: bipolar Type of transistor: NPN Current gain: 200...450 Case: SC59 Frequency: 250MHz |
auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 18000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IPB025N10N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 300W; PG-TO263-7 Mounting: SMD Power dissipation: 300W Polarisation: unipolar Technology: OptiMOS™ 3 Drain current: 180A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: PG-TO263-7 On-state resistance: 2.5mΩ |
auf Bestellung 565 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IPB025N08N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 300W; PG-TO263-3 Mounting: SMD Power dissipation: 300W Polarisation: unipolar Technology: OptiMOS™ 3 Drain current: 120A Kind of channel: enhancement Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: PG-TO263-3 On-state resistance: 2.5mΩ |
auf Bestellung 635 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| BC850CWH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 250mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Current gain: 420
Mounting: SMD
Frequency: 250MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 250mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Current gain: 420
Mounting: SMD
Frequency: 250MHz
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PVT412APBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; 25mA; PV; 6Ω; THT; DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
On-state resistance: 6Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.63x6.47x3.42mm
Leads: for PCB
Insulation voltage: 4kV
Kind of output: MOSFET
Operating temperature: -40...85°C
Manufacturer series: PV
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; 25mA; PV; 6Ω; THT; DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
On-state resistance: 6Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.63x6.47x3.42mm
Leads: for PCB
Insulation voltage: 4kV
Kind of output: MOSFET
Operating temperature: -40...85°C
Manufacturer series: PV
auf Bestellung 3859 Stücke:
Lieferzeit 14-21 Tag (e)
| PVT322PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Ucntrl: 1.2VDC; Icntrl: 2÷25mA; 500mA
Type of relay: solid state
Contacts configuration: DPST-NO
Control voltage: 1.2V DC
Control current: 2...25mA
Max. operating current: 0.5A
Switched voltage: 0...250V AC; 0...250V DC
Manufacturer series: PVT322PbF
Relay variant: MOSFET
On-state resistance: 10Ω
Mounting: THT
Case: DIP8
Operate time: 3ms
Release time: 0.5ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Ucntrl: 1.2VDC; Icntrl: 2÷25mA; 500mA
Type of relay: solid state
Contacts configuration: DPST-NO
Control voltage: 1.2V DC
Control current: 2...25mA
Max. operating current: 0.5A
Switched voltage: 0...250V AC; 0...250V DC
Manufacturer series: PVT322PbF
Relay variant: MOSFET
On-state resistance: 10Ω
Mounting: THT
Case: DIP8
Operate time: 3ms
Release time: 0.5ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFI540NPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 42W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Power dissipation: 42W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 62.7nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 42W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Power dissipation: 42W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 62.7nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 633 Stücke:
Lieferzeit 14-21 Tag (e)
| S29AL008J70TFI020 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; TSSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 8Mb FLASH
Operating voltage: 2.7...3.6V
Case: TSSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Interface: CFI; parallel
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; TSSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 8Mb FLASH
Operating voltage: 2.7...3.6V
Case: TSSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Interface: CFI; parallel
auf Bestellung 502 Stücke:
Lieferzeit 14-21 Tag (e)
| XMC DIGITAL POWER EXPLORER KIT |
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC1300,XMC4200; Add-on connectors: 1
Components: BSC0924ND; IRS2011S; XMC1300; XMC4200
Kind of architecture: Cortex M4; Cortex M0
Number of add-on connectors: 1
Kit contents: base board with buck converter; board with XMC1300 microcontroller; board with XMC4200 microcontroller
Connection: pin strips; USB B micro
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USB; USIC x2
Family: XMC1300; XMC4200
Type of development kit: ARM Infineon
Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC1300,XMC4200; Add-on connectors: 1
Components: BSC0924ND; IRS2011S; XMC1300; XMC4200
Kind of architecture: Cortex M4; Cortex M0
Number of add-on connectors: 1
Kit contents: base board with buck converter; board with XMC1300 microcontroller; board with XMC4200 microcontroller
Connection: pin strips; USB B micro
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USB; USIC x2
Family: XMC1300; XMC4200
Type of development kit: ARM Infineon
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY3210-MINIPROG1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: Cypress; Software: included
Type of development kit: Cypress
Kit contents: board with DIP 28 socket; CY8C29466-24PXI microcontroller; USB cable; USB programmer
Associated circuits: PSoC
Programmers and development kits features: ISP programmer
Interface: USB
Software: included
Category: Development kits - others
Description: Dev.kit: Cypress; Software: included
Type of development kit: Cypress
Kit contents: board with DIP 28 socket; CY8C29466-24PXI microcontroller; USB cable; USB programmer
Associated circuits: PSoC
Programmers and development kits features: ISP programmer
Interface: USB
Software: included
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| XC822MT1FRIAAFXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: I2C,SPI,UART; DALI; -40÷85°C
Type of integrated circuit: microcontroller 8051
Case: PG-TSSOP-16
Mounting: SMD
Interface: I2C; SPI; UART
Kind of core: 8-bit
Supply voltage: 2.5...5.5V DC
Operating temperature: -40...85°C
Integrated circuit features: LEDTSCU; MDU; RTC; watchdog
Clock frequency: 24MHz
Memory: 500B SRAM; 4kB FLASH
Number of input capture channels: 1
Number of PWM channels: 1
Communictions protocol: DALI
Number of 16bit timers: 3
Number of 10bit A/D converters: 4
Number of output compare channels: 1
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: I2C,SPI,UART; DALI; -40÷85°C
Type of integrated circuit: microcontroller 8051
Case: PG-TSSOP-16
Mounting: SMD
Interface: I2C; SPI; UART
Kind of core: 8-bit
Supply voltage: 2.5...5.5V DC
Operating temperature: -40...85°C
Integrated circuit features: LEDTSCU; MDU; RTC; watchdog
Clock frequency: 24MHz
Memory: 500B SRAM; 4kB FLASH
Number of input capture channels: 1
Number of PWM channels: 1
Communictions protocol: DALI
Number of 16bit timers: 3
Number of 10bit A/D converters: 4
Number of output compare channels: 1
auf Bestellung 167 Stücke:
Lieferzeit 14-21 Tag (e)
| CY8C5267AXI-LP051 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 67MHz; TQFP100; 32kBSRAM,128kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP100
Number of inputs/outputs: 72
Supply voltage: 1.71...5.5V DC
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Clock frequency: 67MHz
Kind of core: 32-bit
Memory: 32kB SRAM; 128kB FLASH
Interface: GPIO; I2C; SPI; UART; USB
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 67MHz; TQFP100; 32kBSRAM,128kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP100
Number of inputs/outputs: 72
Supply voltage: 1.71...5.5V DC
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Clock frequency: 67MHz
Kind of core: 32-bit
Memory: 32kB SRAM; 128kB FLASH
Interface: GPIO; I2C; SPI; UART; USB
auf Bestellung 85 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF7343TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 55/-55V; 4.7/-3.4A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55/-55V
Drain current: 4.7/-3.4A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 50/105mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 55/-55V; 4.7/-3.4A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55/-55V
Drain current: 4.7/-3.4A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 50/105mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 6961 Stücke:
Lieferzeit 14-21 Tag (e)
| IRS20957STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 10÷15VDC; Ch: 1; Amp.class: D; SO16
Type of integrated circuit: audio amplifier
Mounting: SMD
Supply voltage: 10...15V DC
Number of channels: 1
Amplifier class: D
Case: SO16
Kind of package: reel; tape
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 10÷15VDC; Ch: 1; Amp.class: D; SO16
Type of integrated circuit: audio amplifier
Mounting: SMD
Supply voltage: 10...15V DC
Number of channels: 1
Amplifier class: D
Case: SO16
Kind of package: reel; tape
auf Bestellung 107 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF7316TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -4.9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -4.9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 686 Stücke:
Lieferzeit 14-21 Tag (e)
| BSS83PH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.33A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -330mA
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.33A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -330mA
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 7708 Stücke:
Lieferzeit 14-21 Tag (e)
| IRL6372TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.1A; 2.5W; SO8
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET x2
Drain-source voltage: 30V
Drain current: 8.1A
On-state resistance: 17.9mΩ
Power dissipation: 2.5W
Gate-source voltage: ±12V
Polarisation: unipolar
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.1A; 2.5W; SO8
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET x2
Drain-source voltage: 30V
Drain current: 8.1A
On-state resistance: 17.9mΩ
Power dissipation: 2.5W
Gate-source voltage: ±12V
Polarisation: unipolar
auf Bestellung 828 Stücke:
Lieferzeit 14-21 Tag (e)
| CY7C1021DV33-10ZSXI |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 3÷3.6V; 10ns; TSOP44 II
Case: TSOP44 II
Mounting: SMD
Memory: 1Mb SRAM
Kind of interface: parallel
Memory organisation: 64kx16bit
Operating voltage: 3...3.6V
Kind of memory: SRAM
Access time: 10ns
Type of integrated circuit: SRAM memory
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 3÷3.6V; 10ns; TSOP44 II
Case: TSOP44 II
Mounting: SMD
Memory: 1Mb SRAM
Kind of interface: parallel
Memory organisation: 64kx16bit
Operating voltage: 3...3.6V
Kind of memory: SRAM
Access time: 10ns
Type of integrated circuit: SRAM memory
auf Bestellung 743 Stücke:
Lieferzeit 14-21 Tag (e)
| IR2127SPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 150ns
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 150ns
auf Bestellung 186 Stücke:
Lieferzeit 14-21 Tag (e)
| IR2127PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 12...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 150ns
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 12...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 150ns
auf Bestellung 138 Stücke:
Lieferzeit 14-21 Tag (e)
| IR21271SPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 9...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 150ns
Turn-off time: 150ns
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 9...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 150ns
Turn-off time: 150ns
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
| IR21271PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 9...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 150ns
Turn-off time: 150ns
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 9...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 150ns
Turn-off time: 150ns
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
| IRLR8726TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 340A; 75W; DPAK
Mounting: SMD
Pulsed drain current: 340A
Power dissipation: 75W
Polarisation: unipolar
Technology: HEXFET®
Drain current: 61A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: DPAK
On-state resistance: 5.8mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 340A; 75W; DPAK
Mounting: SMD
Pulsed drain current: 340A
Power dissipation: 75W
Polarisation: unipolar
Technology: HEXFET®
Drain current: 61A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: DPAK
On-state resistance: 5.8mΩ
auf Bestellung 1776 Stücke:
Lieferzeit 14-21 Tag (e)
| IR2128SPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 12...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 150ns
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 12...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 150ns
auf Bestellung 74 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFR2905ZTRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 42A; Idm: 240A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 42A; Idm: 240A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRFB4127PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 76A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 76A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 76A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 76A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF7324TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BAV199E6327HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 1.5us; SOT23; Ufmax: 1.25V; 330mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 1.5µs
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Case: SOT23
Max. forward voltage: 1.25V
Power dissipation: 0.33W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 1.5us; SOT23; Ufmax: 1.25V; 330mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 1.5µs
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Case: SOT23
Max. forward voltage: 1.25V
Power dissipation: 0.33W
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAV199E6433HTMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 1.5us; SOT23; Ufmax: 1.25V; 330mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 1.5µs
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Case: SOT23
Max. forward voltage: 1.25V
Power dissipation: 0.33W
Kind of package: reel; tape
Max. forward impulse current: 4.5A
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 1.5us; SOT23; Ufmax: 1.25V; 330mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 1.5µs
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Case: SOT23
Max. forward voltage: 1.25V
Power dissipation: 0.33W
Kind of package: reel; tape
Max. forward impulse current: 4.5A
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BFP760H6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; HBT,RF; 13V; 70mA; 0.24W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: HBT; RF
Collector-emitter voltage: 13V
Collector current: 70mA
Power dissipation: 0.24W
Case: SOT343
Current gain: 160...400
Mounting: SMD
Frequency: 45GHz
Technology: SiGe:C
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; HBT,RF; 13V; 70mA; 0.24W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: HBT; RF
Collector-emitter voltage: 13V
Collector current: 70mA
Power dissipation: 0.24W
Case: SOT343
Current gain: 160...400
Mounting: SMD
Frequency: 45GHz
Technology: SiGe:C
Kind of package: reel; tape
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFB4227PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; 190W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Power dissipation: 190W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; 190W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Power dissipation: 190W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 109 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFB4227PBFXKMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF7424TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ICE2HS01GXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 6mA; 0.03÷1MHz; PG-DSO-20
Output current: 6mA
Mounting: SMD
Operating temperature: -25...125°C
Kind of integrated circuit: resonant mode controller
Frequency: 30kHz...1MHz
Operating voltage: 11...18V DC
Topology: push-pull
Type of integrated circuit: PMIC
Application: SMPS
Case: PG-DSO-20
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 6mA; 0.03÷1MHz; PG-DSO-20
Output current: 6mA
Mounting: SMD
Operating temperature: -25...125°C
Kind of integrated circuit: resonant mode controller
Frequency: 30kHz...1MHz
Operating voltage: 11...18V DC
Topology: push-pull
Type of integrated circuit: PMIC
Application: SMPS
Case: PG-DSO-20
auf Bestellung 987 Stücke:
Lieferzeit 14-21 Tag (e)
| SPP11N80C3 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 156W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 156W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 156W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 156W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 135 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFP3006PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 375W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 375W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 375W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 375W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTS50085-1TMA |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 38A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 38A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO220-7-4
On-state resistance: 7.2mΩ
Supply voltage: 5...58V DC
Technology: High Current PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 38A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 38A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO220-7-4
On-state resistance: 7.2mΩ
Supply voltage: 5...58V DC
Technology: High Current PROFET
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)
| BTS441RG |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; TO263-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO263-5
On-state resistance: 15mΩ
Technology: Classic PROFET
Output voltage: 4.75...43V
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; TO263-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO263-5
On-state resistance: 15mΩ
Technology: Classic PROFET
Output voltage: 4.75...43V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTS6133D |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 33A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 33A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
Supply voltage: 5.5...38V DC
Technology: High Current PROFET
On-state resistance: 8mΩ
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 33A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 33A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
Supply voltage: 5.5...38V DC
Technology: High Current PROFET
On-state resistance: 8mΩ
auf Bestellung 2503 Stücke:
Lieferzeit 14-21 Tag (e)
| BSP752R |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Technology: Classic PROFET
Output voltage: 52V
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Technology: Classic PROFET
Output voltage: 52V
auf Bestellung 630 Stücke:
Lieferzeit 14-21 Tag (e)
| BTS4300SGA |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.4A; Ch: 1; N-Channel; SMD; SO8
Number of channels: 1
Output current: 0.4A
Supply voltage: 5...34V DC
Type of integrated circuit: power switch
Kind of output: N-Channel
Technology: Classic PROFET
Case: SO8
Kind of integrated circuit: high-side
On-state resistance: 0.3Ω
Mounting: SMD
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.4A; Ch: 1; N-Channel; SMD; SO8
Number of channels: 1
Output current: 0.4A
Supply voltage: 5...34V DC
Type of integrated circuit: power switch
Kind of output: N-Channel
Technology: Classic PROFET
Case: SO8
Kind of integrated circuit: high-side
On-state resistance: 0.3Ω
Mounting: SMD
auf Bestellung 2347 Stücke:
Lieferzeit 14-21 Tag (e)
| IPA70R360P7SXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; Idm: 34A; 26.5W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 26.5W
Case: TO220FP
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 34A
Version: ESD
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; Idm: 34A; 26.5W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 26.5W
Case: TO220FP
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 34A
Version: ESD
Kind of package: tube
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
| IPAN70R360P7SXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 26.5W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 26.5W
Case: TO220FP
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 16.4nC
Version: ESD
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 26.5W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 26.5W
Case: TO220FP
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 16.4nC
Version: ESD
Kind of package: tube
auf Bestellung 280 Stücke:
Lieferzeit 14-21 Tag (e)
| IPN70R360P7SATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 7.2W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 7.2W
Case: PG-SOT223
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 16.4nC
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 7.2W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 7.2W
Case: PG-SOT223
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 16.4nC
Version: ESD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPS70R360P7SAKMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; IPAK SL; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 59.5W
Case: IPAK SL
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 16.4nC
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; IPAK SL; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 59.5W
Case: IPAK SL
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 16.4nC
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSP129H6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.05A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 50mA
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 6.5Ω
Mounting: SMD
Kind of channel: depletion
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.05A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 50mA
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 6.5Ω
Mounting: SMD
Kind of channel: depletion
auf Bestellung 750 Stücke:
Lieferzeit 14-21 Tag (e)
| BSD223PH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-363
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.39A
Power dissipation: 0.25W
Case: PG-SOT-363
Gate-source voltage: ±12V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.39A; 0.25W; PG-SOT-363
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.39A
Power dissipation: 0.25W
Case: PG-SOT-363
Gate-source voltage: ±12V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1468 Stücke:
Lieferzeit 14-21 Tag (e)
| BSL207SPH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 2W; PG-TSOP-6
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Power dissipation: 2W
Case: PG-TSOP-6
Gate-source voltage: ±12V
On-state resistance: 41mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 2W; PG-TSOP-6
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Power dissipation: 2W
Case: PG-TSOP-6
Gate-source voltage: ±12V
On-state resistance: 41mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 7750 Stücke:
Lieferzeit 14-21 Tag (e)
| SPD50P03LGBTMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; 150W; PG-TO252-5
Case: PG-TO252-5
Mounting: SMD
On-state resistance: 7mΩ
Power dissipation: 150W
Polarisation: unipolar
Technology: OptiMOS™ P
Drain current: -50A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; 150W; PG-TO252-5
Case: PG-TO252-5
Mounting: SMD
On-state resistance: 7mΩ
Power dissipation: 150W
Polarisation: unipolar
Technology: OptiMOS™ P
Drain current: -50A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
auf Bestellung 727 Stücke:
Lieferzeit 14-21 Tag (e)
| BSL307SPH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.5A; 2W; PG-TSOP-6
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.5A
Power dissipation: 2W
Case: PG-TSOP-6
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.5A; 2W; PG-TSOP-6
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.5A
Power dissipation: 2W
Case: PG-TSOP-6
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1389 Stücke:
Lieferzeit 14-21 Tag (e)
| BSO207PHXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; 1.6W; PG-DSO-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5A
Power dissipation: 1.6W
Case: PG-DSO-8
Gate-source voltage: ±12V
On-state resistance: 45mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; 1.6W; PG-DSO-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5A
Power dissipation: 1.6W
Case: PG-DSO-8
Gate-source voltage: ±12V
On-state resistance: 45mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2211 Stücke:
Lieferzeit 14-21 Tag (e)
| IPD122N10N3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2178 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF40R207 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 64A; 83W; DPAK
Mounting: SMD
Power dissipation: 83W
Gate charge: 45nC
Polarisation: unipolar
Technology: HEXFET®
Drain current: 64A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: DPAK
On-state resistance: 5.1mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 64A; 83W; DPAK
Mounting: SMD
Power dissipation: 83W
Gate charge: 45nC
Polarisation: unipolar
Technology: HEXFET®
Drain current: 64A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: DPAK
On-state resistance: 5.1mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY15B004Q-SXE |
|
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 3÷3.6VDC; 16MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...125°C
Clock frequency: 16MHz
Memory: 4kb FRAM
Kind of interface: serial
Memory organisation: 512x8bit
Case: SO8
Interface: SPI
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4kbFRAM; SPI; 512x8bit; 3÷3.6VDC; 16MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Mounting: SMD
Supply voltage: 3...3.6V DC
Operating temperature: -40...125°C
Clock frequency: 16MHz
Memory: 4kb FRAM
Kind of interface: serial
Memory organisation: 512x8bit
Case: SO8
Interface: SPI
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ICE3PCS03GXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; 21÷100kHz; PG-DSO-8; boost; 90÷270V; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Frequency: 21...100kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Topology: boost
Input voltage: 90...270V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; 21÷100kHz; PG-DSO-8; boost; 90÷270V; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Frequency: 21...100kHz
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Topology: boost
Input voltage: 90...270V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ICE3PCS01G |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; 21÷100kHz; PG-DSO-14; boost; 90÷270V
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Frequency: 21...100kHz
Case: PG-DSO-14
Mounting: SMD
Operating temperature: -25...125°C
Topology: boost
Input voltage: 90...270V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PFC controller; 21÷100kHz; PG-DSO-14; boost; 90÷270V
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Frequency: 21...100kHz
Case: PG-DSO-14
Mounting: SMD
Operating temperature: -25...125°C
Topology: boost
Input voltage: 90...270V
Duty cycle factor: 0...98.5%
Application: SMPS
Operating voltage: 11...25V DC
auf Bestellung 1230 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFR9120NTRLPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -6.5A; 39W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -6.5A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -6.5A; 39W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -6.5A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRLR120NTRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 39W; DPAK
Mounting: SMD
Power dissipation: 39W
Polarisation: unipolar
Technology: HEXFET®
Features of semiconductor devices: logic level
Drain current: 11A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Kind of package: reel
Case: DPAK
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 39W; DPAK
Mounting: SMD
Power dissipation: 39W
Polarisation: unipolar
Technology: HEXFET®
Features of semiconductor devices: logic level
Drain current: 11A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Kind of package: reel
Case: DPAK
auf Bestellung 3682 Stücke:
Lieferzeit 14-21 Tag (e)
| CY62148EV30LL-45BVXIT |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 45ns; VFBGA36; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA36
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 45ns; VFBGA36; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA36
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY62148EV30LL-45ZSXIT |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 45ns; TSOP32 II; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: TSOP32 II
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 45ns; TSOP32 II; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: TSOP32 II
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BC849BE6327HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 100mA; 330mW; SC59
Collector current: 0.1A
Mounting: SMD
Collector-emitter voltage: 30V
Power dissipation: 0.33W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 200...450
Case: SC59
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 100mA; 330mW; SC59
Collector current: 0.1A
Mounting: SMD
Collector-emitter voltage: 30V
Power dissipation: 0.33W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 200...450
Case: SC59
Frequency: 250MHz
auf Bestellung 21000 Stücke:
Lieferzeit 14-21 Tag (e)
| IPB025N10N3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 300W; PG-TO263-7
Mounting: SMD
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 180A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO263-7
On-state resistance: 2.5mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 300W; PG-TO263-7
Mounting: SMD
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 180A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO263-7
On-state resistance: 2.5mΩ
auf Bestellung 565 Stücke:
Lieferzeit 14-21 Tag (e)
| IPB025N08N3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 300W; PG-TO263-3
Mounting: SMD
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO263-3
On-state resistance: 2.5mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 300W; PG-TO263-3
Mounting: SMD
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO263-3
On-state resistance: 2.5mΩ
auf Bestellung 635 Stücke:
Lieferzeit 14-21 Tag (e)