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S29PL064J60BFA073 INFINEON TECHNOLOGIES Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 60ns; FBGA48; parallel
Case: FBGA48
Mounting: SMD
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 60ns
Operating voltage: 2.7...3.6V
Memory: 64Mb FLASH
Application: automotive
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Produkt ist nicht verfügbar
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S29PL064J60BFI070 INFINEON TECHNOLOGIES Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 60ns; FBGA48; parallel
Case: FBGA48
Mounting: SMD
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 60ns
Operating voltage: 2.7...3.6V
Memory: 64Mb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
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S29PL064J60BFW073 INFINEON TECHNOLOGIES Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 60ns; FBGA48; parallel
Case: FBGA48
Mounting: SMD
Kind of interface: parallel
Operating temperature: -25...85°C
Access time: 60ns
Operating voltage: 2.7...3.6V
Memory: 64Mb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Produkt ist nicht verfügbar
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S29PL127J60BFI040 INFINEON TECHNOLOGIES Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 60ns; FBGA80; parallel
Case: FBGA80
Mounting: SMD
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 60ns
Operating voltage: 2.7...3.6V
Memory: 128Mb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Produkt ist nicht verfügbar
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TT280N16SOFHPSA1 INFINEON TECHNOLOGIES TT280N16SOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 280A; BG-PB50SB-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 280A
Case: BG-PB50SB-1
Max. forward voltage: 1.77V
Max. forward impulse current: 9kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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TT280N18SOF INFINEON TECHNOLOGIES TT280N18SOF_TD280N18SOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 280A; BG-PB50SB-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 280A
Case: BG-PB50SB-1
Max. forward voltage: 1.77V
Max. forward impulse current: 9kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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BSC146N10LS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSC146N10LS5-DataSheet-v02_02-EN.pdf?fileId=5546d4626b2d8e69016b4c4f80f313ea Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IRF100B202 IRF100B202 INFINEON TECHNOLOGIES IRF100B202.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 68A; 221W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 68A
Power dissipation: 221W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: THT
Gate charge: 77nC
Kind of channel: enhancement
Kind of package: tube
auf Bestellung 146 Stücke:
Lieferzeit 14-21 Tag (e)
32+2.69 EUR
41+2.11 EUR
46+1.87 EUR
61+1.42 EUR
100+1.26 EUR
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IRF100S201 IRF100S201 INFINEON TECHNOLOGIES IRF100x201.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 690A; 441W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 136A
Pulsed drain current: 690A
Power dissipation: 441W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 255nC
Kind of channel: enhancement
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IRF100P218AKMA1 IRF100P218AKMA1 INFINEON TECHNOLOGIES Infineon-IRF100P218-DataSheet-v02_01-EN.pdf?fileId=5546d462602a9dc80160e20d3eca4b83 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Produkt ist nicht verfügbar
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IPD95R750P7ATMA1 IPD95R750P7ATMA1 INFINEON TECHNOLOGIES IPD95R750P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 73W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 5.5A
Power dissipation: 73W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPA95R750P7XKSA1 IPA95R750P7XKSA1 INFINEON TECHNOLOGIES IPA95R750P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 28W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 5.5A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPA95R450P7XKSA1 IPA95R450P7XKSA1 INFINEON TECHNOLOGIES IPA95R450P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 8.6A; 30W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 8.6A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 95 Stücke:
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23+3.83 EUR
30+2.89 EUR
33+2.61 EUR
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BAS16SH6727XTSA1 INFINEON TECHNOLOGIES bas16series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141b93811b03ff Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.2A; 4ns; Ufmax: 1.25V; Ifsm: 4.5A
Application: automotive industry
Mounting: SMD
Type of diode: switching
Semiconductor structure: triple
Reverse recovery time: 4ns
Leakage current: 1µA
Load current: 0.2A
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Max. off-state voltage: 80V
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BTS3134DATMA1 INFINEON TECHNOLOGIES Infineon-BTS3134D-DS-v01_04-EN.pdf?fileId=5546d4624b0b249c014b9cbd92574da3&ack=t Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.5A; Ch: 1; N-Channel; SMD; TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-3
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 42V
Produkt ist nicht verfügbar
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IDH06G65C6XKSA1 IDH06G65C6XKSA1 INFINEON TECHNOLOGIES IDH06G65C6.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; PG-TO220-2; Ir: 46uA
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.25V
Max. forward impulse current: 30A
Leakage current: 46µA
Power dissipation: 54W
Kind of package: tube
Heatsink thickness: 1.17...1.37mm
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25+3.51 EUR
50+2.7 EUR
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CY8C4125AZI-M445 CY8C4125AZI-M445 INFINEON TECHNOLOGIES CY8C4125AZI-M443.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP64; 4kBSRAM,32kBFLASH
Operating temperature: -40...85°C
Type of integrated circuit: PSoC microcontroller
Case: TQFP64
Integrated circuit features: CapSense; LCD controller
Mounting: SMD
Kind of core: 32-bit
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 51
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 24MHz
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
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CY8C4246AXI-M445 CY8C4246AXI-M445 INFINEON TECHNOLOGIES CY8C4245AZI-M443.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP64; 8kBSRAM,64kBFLASH
Operating temperature: -40...85°C
Type of integrated circuit: PSoC microcontroller
Case: TQFP64
Integrated circuit features: CapSense; LCD controller
Mounting: SMD
Kind of core: 32-bit
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 51
Memory: 8kB SRAM; 64kB FLASH
Clock frequency: 48MHz
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
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CY8C4246AZI-M445 CY8C4246AZI-M445 INFINEON TECHNOLOGIES CY8C4245AZI-M443.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP64; 8kBSRAM,64kBFLASH
Operating temperature: -40...85°C
Type of integrated circuit: PSoC microcontroller
Case: TQFP64
Integrated circuit features: CapSense; LCD controller
Mounting: SMD
Kind of core: 32-bit
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 51
Memory: 8kB SRAM; 64kB FLASH
Clock frequency: 48MHz
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
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IPD047N03LF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPD047N03LF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192b89c5f296484 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 71A; 65W; DPAK,TO252
Polarisation: unipolar
On-state resistance: 4.7mΩ
Drain-source voltage: 30V
Drain current: 71A
Power dissipation: 65W
Case: DPAK; TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Produkt ist nicht verfügbar
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BCR421UE6327HTSA1 INFINEON TECHNOLOGIES Infineon-BCR420U-BCR421U-DS-v02_01-EN.pdf?fileId=5546d4626102d35a01617524f09e061d Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 150...200mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 1.4...40V DC
Produkt ist nicht verfügbar
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TLE4906L TLE4906L INFINEON TECHNOLOGIES TLE4906L.PDF Category: Hall Sensors
Description: Sensor: Hall; unipolar; 150Gs; Usup: 2.7÷18VDC; 20mA
Type of sensor: Hall
Supply voltage: 2.7...18V DC
Range of detectable magnetic field: 150Gs
Operating temperature: -40...150°C
Kind of sensor: unipolar
Switched current: 20mA
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TLE4906LHALA1 INFINEON TECHNOLOGIES infineon-tle4906k-datasheet-en.pdf Category: Hall Sensors
Description: Sensor: Hall
Type of sensor: Hall
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2000+0.77 EUR
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S27KS0642GABHA020 INFINEON TECHNOLOGIES Infineon-S27KL0642_S27KS0642_3.0_V_1.8_V_64_Mb_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8a1c47164 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
Produkt ist nicht verfügbar
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S25FL256LAGBHA020 INFINEON TECHNOLOGIES Infineon-S25FL256L_S25FL128L_256-MB_32-MB128-MB_16-MB_3-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Case: BGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Interface: QUAD SPI
Kind of interface: serial
Application: automotive
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
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S25FL256LAGBHA023 INFINEON TECHNOLOGIES Infineon-S25FL256L_S25FL128L_256-MB_32-MB128-MB_16-MB_3-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Case: BGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Interface: QUAD SPI
Kind of interface: serial
Application: automotive
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
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S26KS128SDPBHA020 INFINEON TECHNOLOGIES Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Interface: HyperBus
Kind of interface: serial
Application: automotive
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
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S26KS256SDPBHA020 INFINEON TECHNOLOGIES Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Application: automotive
Kind of memory: NOR
Type of integrated circuit: FLASH memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Memory: 256Mb FLASH
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S26KS256SDPBHA023 INFINEON TECHNOLOGIES download Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Application: automotive
Kind of memory: NOR
Type of integrated circuit: FLASH memory
Case: FBGA24
Interface: HyperBus
Kind of package: reel; tape
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Memory: 256Mb FLASH
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S26KS512SDPBHA020 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Interface: HyperBus
Kind of interface: serial
Application: automotive
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
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S27KL0643DPBHA020 INFINEON TECHNOLOGIES Infineon-S27KL0643_S27KS0643_3.0_V_1.8_V_64_MB_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8b87c7185 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
Produkt ist nicht verfügbar
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S27KL0643DPBHA023 INFINEON TECHNOLOGIES Infineon-S27KL0643_S27KS0643_3.0_V_1.8_V_64_MB_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8b87c7185 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
Produkt ist nicht verfügbar
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S27KS0642GABHA023 INFINEON TECHNOLOGIES Infineon-S27KL0642_S27KS0642_3.0_V_1.8_V_64_Mb_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8a1c47164 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; 1.7÷2VDC
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
Produkt ist nicht verfügbar
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S27KS0643GABHA023 INFINEON TECHNOLOGIES Infineon-S27KL0643_S27KS0643_3.0_V_1.8_V_64_MB_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8b87c7185 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; 1.7÷2VDC
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
Produkt ist nicht verfügbar
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S29GL512S10DHA023 INFINEON TECHNOLOGIES infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Output voltage: 2.7...3.6V DC
Application: automotive
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S70KL1282DPBHA020 INFINEON TECHNOLOGIES Infineon-S70KL1282_S70KS1282_3.0_V_1.8_V_128_Mb_(16_MB)_HYPERBUS_INTERFACE_HYPERRAM_(SELF-REFRESH_DRAM)-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9315b7210 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
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S70KL1282DPBHA023 INFINEON TECHNOLOGIES Infineon-S70KL1282_S70KS1282_3.0_V_1.8_V_128_Mb_(16_MB)_HYPERBUS_INTERFACE_HYPERRAM_(SELF-REFRESH_DRAM)-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9315b7210 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
Produkt ist nicht verfügbar
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S70KS1282GABHA023 INFINEON TECHNOLOGIES Infineon-S70KL1282_S70KS1282_3.0_V_1.8_V_128_Mb_(16_MB)_HYPERBUS_INTERFACE_HYPERRAM_(SELF-REFRESH_DRAM)-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9315b7210 Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
Produkt ist nicht verfügbar
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S80KS2563GABHA020 INFINEON TECHNOLOGIES Infineon-S80KS2563_1.8_V_256-Mb_Octal_xSPI_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd7ad739905af Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Mounting: SMD
Operating temperature: -40...85°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
Produkt ist nicht verfügbar
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S80KS5122GABHA020 INFINEON TECHNOLOGIES Infineon-S80KS5122_1.8_V_512-Mbit_HyperBus_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd81b77c1088f Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
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IPD60R600P7ATMA1 IPD60R600P7ATMA1 INFINEON TECHNOLOGIES infineon-ipd60r600p7-datasheet-en.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3
Type of transistor: N-MOSFET
On-state resistance: 0.6Ω
Mounting: SMD
Pulsed drain current: 16A
Power dissipation: 30W
Gate charge: 9nC
Polarisation: unipolar
Version: ESD
Technology: CoolMOS™ P7
Drain current: 4A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Case: PG-TO252-3
Produkt ist nicht verfügbar
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BCW66KFE6327 BCW66KFE6327 INFINEON TECHNOLOGIES BCW66K.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.5W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Frequency: 170MHz
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BCW66KGE6327HTSA1 INFINEON TECHNOLOGIES bcw66.pdf?folderId=db3a304314dca389011545f4eb561884&fileId=db3a304314dca389011547504ebe1a07 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 800mA; SC59; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Case: SC59
Current gain: 160
Mounting: SMD
Frequency: 170MHz
Application: automotive industry
Produkt ist nicht verfügbar
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IRFSL3207ZPBF IRFSL3207ZPBF INFINEON TECHNOLOGIES irfs3207zpbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 300W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 300W
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)
15+5.77 EUR
21+4.22 EUR
25+3.51 EUR
50+3.06 EUR
Mindestbestellmenge: 15 Stücke
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IPD25N06S4L30ATMA2 INFINEON TECHNOLOGIES Infineon-IPD25N06S4L_30-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038898f7b0caa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 17A; Idm: 92A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 92A
Power dissipation: 29W
Case: PG-TO252-3-11
Gate-source voltage: ±16V
On-state resistance: 30mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T2
Produkt ist nicht verfügbar
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BTS3125EJ BTS3125EJ INFINEON TECHNOLOGIES BTS3125EJ.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2A; Ch: 1; N-Channel; SMD; SO8-EP
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8-EP
On-state resistance: 0.25Ω
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Turn-on time: 115µs
Turn-off time: 210µs
Produkt ist nicht verfügbar
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KP229E3111XTMA1 INFINEON TECHNOLOGIES Infineon-KP229E3111-DS-v01_00-EN.pdf?fileId=5546d4624bcaebcf014be98f6a2e3c19 Category: Pressure Sensors
Description: Sensor: pressure; 20÷300kPa; absolute; OUT: analogue voltage; SMT
Mounting: SMT
Type of sensor: pressure
Operating temperature: -40...140°C
Supply voltage: 4.5...5.5V DC
Pressure measuring range: 20...300kPa
Operation mode: absolute
Output configuration: analogue voltage
Produkt ist nicht verfügbar
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IHW20N120R5XKSA1 IHW20N120R5XKSA1 INFINEON TECHNOLOGIES IHW20N120R5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 20A; 144W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 144W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-off time: 440ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
auf Bestellung 64 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.88 EUR
20+4.4 EUR
24+3.63 EUR
Mindestbestellmenge: 18 Stücke
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BSC0504NSIATMA1 BSC0504NSIATMA1 INFINEON TECHNOLOGIES BSC0504NSI-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 30W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 3.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 30W
Drain current: 64A
Case: PG-TDSON-8
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PVI5080NPBF PVI5080NPBF INFINEON TECHNOLOGIES Infineon-PVI5080N-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801607b6ff8185cd0 Category: Optocouplers - others
Description: Optocoupler; THT; Ch: 1; OUT: photodiode; 4kV; DIP8; PVI-NPbF
Manufacturer series: PVI-NPbF
Case: DIP8
Mounting: THT
Type of optocoupler: optocoupler
Kind of output: photodiode
Turn-off time: 220µs
Turn-on time: 0.3ms
Number of channels: 1
Insulation voltage: 4kV
auf Bestellung 85 Stücke:
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12+7.56 EUR
13+6.93 EUR
25+6.08 EUR
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FM28V020-SG FM28V020-SG INFINEON TECHNOLOGIES FM28V020-DTE.pdf Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; parallel 8bit; 32kx8bit; 2÷3.6VDC
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: parallel 8bit
Memory organisation: 32kx8bit
Supply voltage: 2...3.6V DC
Access time: 70ns
Case: SO28
Mounting: SMD
Kind of interface: parallel
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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FM28V020-T28G FM28V020-T28G INFINEON TECHNOLOGIES FM28V020-DTE.pdf Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; parallel 8bit; 32kx8bit; 2÷3.6VDC
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: parallel 8bit
Memory organisation: 32kx8bit
Supply voltage: 2...3.6V DC
Access time: 70ns
Case: TSOP28
Mounting: SMD
Kind of interface: parallel
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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2DIB0400FXUMA1 INFINEON TECHNOLOGIES Infineon-2DIBx40xF-DS-v_1_00-EN.pdf-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c872bd8d60187374172573005 Category: Unclassified
Description: 2DIB0400FXUMA1
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.82 EUR
Mindestbestellmenge: 2500 Stücke
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CY62157EV30LL-45ZSXIT INFINEON TECHNOLOGIES Infineon-CY62157EV30_MoBL_8-Mbit_(512_K_16)_Static_RAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe669131ef&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_4_0 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.2...3.6V
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
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IDH08G65C5 IDH08G65C5 INFINEON TECHNOLOGIES Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; PG-TO220-2; 76W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.8V
Max. forward impulse current: 60A
Leakage current: 1.6µA
Power dissipation: 76W
Kind of package: tube
Heatsink thickness: 1.17...137mm
auf Bestellung 437 Stücke:
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19+4.58 EUR
50+4.28 EUR
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S29GL01GS11DHIV10 INFINEON TECHNOLOGIES infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
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IPA90R500C3XKSA2 INFINEON TECHNOLOGIES Infineon-IPA90R500C3-DS-v01_00-en.pdf?fileId=db3a30431b3e89eb011b8cd1d1b10fb6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 11A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 11A
Power dissipation: 34W
Case: TO220FP
On-state resistance: 0.5Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 68nC
Produkt ist nicht verfügbar
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IPA90R800C3XKSA1 IPA90R800C3XKSA1 INFINEON TECHNOLOGIES IPA90R800C3XKSA1-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.4A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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CY7C64225-28PVXC INFINEON TECHNOLOGIES CY7C64225.PDF Category: USB interfaces - integrated circuits
Description: IC: interface; USB; SSOP28; 27mA; ESD; RS232
Type of integrated circuit: interface
Interface: USB
Case: SSOP28
Integrated circuit features: bridge
Mounting: SMD
Operating temperature: 0...70°C
Number of channels: 1
DC supply current: 27mA
Version: ESD
Communictions protocol: RS232
auf Bestellung 2565 Stücke:
Lieferzeit 14-21 Tag (e)
47+4.71 EUR
141+4.24 EUR
Mindestbestellmenge: 47 Stücke
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IRG7PH44K10D-EPBF IRG7PH44K10D-EPBF INFINEON TECHNOLOGIES IRG7PH44K10D-EPBF.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 70A; 320W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 70A
Power dissipation: 320W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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S29PL064J60BFA073 Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 60ns; FBGA48; parallel
Case: FBGA48
Mounting: SMD
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 60ns
Operating voltage: 2.7...3.6V
Memory: 64Mb FLASH
Application: automotive
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Produkt ist nicht verfügbar
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S29PL064J60BFI070 Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 60ns; FBGA48; parallel
Case: FBGA48
Mounting: SMD
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 60ns
Operating voltage: 2.7...3.6V
Memory: 64Mb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Produkt ist nicht verfügbar
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S29PL064J60BFW073 Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 60ns; FBGA48; parallel
Case: FBGA48
Mounting: SMD
Kind of interface: parallel
Operating temperature: -25...85°C
Access time: 60ns
Operating voltage: 2.7...3.6V
Memory: 64Mb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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S29PL127J60BFI040 Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; 60ns; FBGA80; parallel
Case: FBGA80
Mounting: SMD
Kind of interface: parallel
Operating temperature: -40...85°C
Access time: 60ns
Operating voltage: 2.7...3.6V
Memory: 128Mb FLASH
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Produkt ist nicht verfügbar
Mindestbestellmenge: 2100 Stücke
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TT280N16SOFHPSA1 TT280N16SOF.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 280A; BG-PB50SB-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 280A
Case: BG-PB50SB-1
Max. forward voltage: 1.77V
Max. forward impulse current: 9kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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TT280N18SOF TT280N18SOF_TD280N18SOF.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 280A; BG-PB50SB-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 280A
Case: BG-PB50SB-1
Max. forward voltage: 1.77V
Max. forward impulse current: 9kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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BSC146N10LS5ATMA1 Infineon-BSC146N10LS5-DataSheet-v02_02-EN.pdf?fileId=5546d4626b2d8e69016b4c4f80f313ea
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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IRF100B202 IRF100B202.pdf
IRF100B202
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 68A; 221W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 68A
Power dissipation: 221W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: THT
Gate charge: 77nC
Kind of channel: enhancement
Kind of package: tube
auf Bestellung 146 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
32+2.69 EUR
41+2.11 EUR
46+1.87 EUR
61+1.42 EUR
100+1.26 EUR
Mindestbestellmenge: 32 Stücke
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IRF100S201 IRF100x201.pdf
IRF100S201
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 690A; 441W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 136A
Pulsed drain current: 690A
Power dissipation: 441W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 255nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF100P218AKMA1 Infineon-IRF100P218-DataSheet-v02_01-EN.pdf?fileId=5546d462602a9dc80160e20d3eca4b83
IRF100P218AKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Produkt ist nicht verfügbar
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IPD95R750P7ATMA1 IPD95R750P7.pdf
IPD95R750P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 73W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 5.5A
Power dissipation: 73W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IPA95R750P7XKSA1 IPA95R750P7.pdf
IPA95R750P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 5.5A; 28W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 5.5A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPA95R450P7XKSA1 IPA95R450P7.pdf
IPA95R450P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 950V; 8.6A; 30W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 8.6A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
23+3.83 EUR
30+2.89 EUR
33+2.61 EUR
Mindestbestellmenge: 23 Stücke
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BAS16SH6727XTSA1 bas16series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141b93811b03ff
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.2A; 4ns; Ufmax: 1.25V; Ifsm: 4.5A
Application: automotive industry
Mounting: SMD
Type of diode: switching
Semiconductor structure: triple
Reverse recovery time: 4ns
Leakage current: 1µA
Load current: 0.2A
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Max. off-state voltage: 80V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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BTS3134DATMA1 Infineon-BTS3134D-DS-v01_04-EN.pdf?fileId=5546d4624b0b249c014b9cbd92574da3&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.5A; Ch: 1; N-Channel; SMD; TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-3
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 42V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IDH06G65C6XKSA1 IDH06G65C6.pdf
IDH06G65C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; PG-TO220-2; Ir: 46uA
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.25V
Max. forward impulse current: 30A
Leakage current: 46µA
Power dissipation: 54W
Kind of package: tube
Heatsink thickness: 1.17...1.37mm
auf Bestellung 99 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
25+3.51 EUR
50+2.7 EUR
Mindestbestellmenge: 25 Stücke
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CY8C4125AZI-M445 CY8C4125AZI-M443.pdf
CY8C4125AZI-M445
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP64; 4kBSRAM,32kBFLASH
Operating temperature: -40...85°C
Type of integrated circuit: PSoC microcontroller
Case: TQFP64
Integrated circuit features: CapSense; LCD controller
Mounting: SMD
Kind of core: 32-bit
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 51
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 24MHz
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Produkt ist nicht verfügbar
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CY8C4246AXI-M445 CY8C4245AZI-M443.pdf
CY8C4246AXI-M445
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP64; 8kBSRAM,64kBFLASH
Operating temperature: -40...85°C
Type of integrated circuit: PSoC microcontroller
Case: TQFP64
Integrated circuit features: CapSense; LCD controller
Mounting: SMD
Kind of core: 32-bit
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 51
Memory: 8kB SRAM; 64kB FLASH
Clock frequency: 48MHz
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Produkt ist nicht verfügbar
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CY8C4246AZI-M445 CY8C4245AZI-M443.pdf
CY8C4246AZI-M445
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP64; 8kBSRAM,64kBFLASH
Operating temperature: -40...85°C
Type of integrated circuit: PSoC microcontroller
Case: TQFP64
Integrated circuit features: CapSense; LCD controller
Mounting: SMD
Kind of core: 32-bit
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 51
Memory: 8kB SRAM; 64kB FLASH
Clock frequency: 48MHz
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Produkt ist nicht verfügbar
Mindestbestellmenge: 1600 Stücke
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IPD047N03LF2SATMA1 Infineon-IPD047N03LF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192b89c5f296484
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 71A; 65W; DPAK,TO252
Polarisation: unipolar
On-state resistance: 4.7mΩ
Drain-source voltage: 30V
Drain current: 71A
Power dissipation: 65W
Case: DPAK; TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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BCR421UE6327HTSA1 Infineon-BCR420U-BCR421U-DS-v02_01-EN.pdf?fileId=5546d4626102d35a01617524f09e061d
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 150...200mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 1.4...40V DC
Produkt ist nicht verfügbar
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TLE4906L TLE4906L.PDF
TLE4906L
Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall; unipolar; 150Gs; Usup: 2.7÷18VDC; 20mA
Type of sensor: Hall
Supply voltage: 2.7...18V DC
Range of detectable magnetic field: 150Gs
Operating temperature: -40...150°C
Kind of sensor: unipolar
Switched current: 20mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
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TLE4906LHALA1 infineon-tle4906k-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall
Type of sensor: Hall
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
2000+0.77 EUR
Mindestbestellmenge: 2000 Stücke
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S27KS0642GABHA020 Infineon-S27KL0642_S27KS0642_3.0_V_1.8_V_64_Mb_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8a1c47164
Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
Produkt ist nicht verfügbar
Mindestbestellmenge: 1690 Stücke
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S25FL256LAGBHA020 Infineon-S25FL256L_S25FL128L_256-MB_32-MB128-MB_16-MB_3-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Case: BGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Interface: QUAD SPI
Kind of interface: serial
Application: automotive
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 338 Stücke
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S25FL256LAGBHA023 Infineon-S25FL256L_S25FL128L_256-MB_32-MB128-MB_16-MB_3-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Case: BGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Interface: QUAD SPI
Kind of interface: serial
Application: automotive
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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S26KS128SDPBHA020 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Interface: HyperBus
Kind of interface: serial
Application: automotive
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 1690 Stücke
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S26KS256SDPBHA020 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Application: automotive
Kind of memory: NOR
Type of integrated circuit: FLASH memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Memory: 256Mb FLASH
Produkt ist nicht verfügbar
Mindestbestellmenge: 1690 Stücke
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S26KS256SDPBHA023 download
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Application: automotive
Kind of memory: NOR
Type of integrated circuit: FLASH memory
Case: FBGA24
Interface: HyperBus
Kind of package: reel; tape
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Memory: 256Mb FLASH
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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S26KS512SDPBHA020
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 166MHz; 1.7÷1.95V; FBGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Interface: HyperBus
Kind of interface: serial
Application: automotive
Operating voltage: 1.7...1.95V
Operating frequency: 166MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 1690 Stücke
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S27KL0643DPBHA020 Infineon-S27KL0643_S27KS0643_3.0_V_1.8_V_64_MB_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8b87c7185
Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
Produkt ist nicht verfügbar
Mindestbestellmenge: 3380 Stücke
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S27KL0643DPBHA023 Infineon-S27KL0643_S27KS0643_3.0_V_1.8_V_64_MB_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8b87c7185
Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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S27KS0642GABHA023 Infineon-S27KL0642_S27KS0642_3.0_V_1.8_V_64_Mb_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8a1c47164
Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; 1.7÷2VDC
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S27KS0643GABHA023 Infineon-S27KL0643_S27KS0643_3.0_V_1.8_V_64_MB_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8b87c7185
Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; 1.7÷2VDC
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 64Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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S29GL512S10DHA023 infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Output voltage: 2.7...3.6V DC
Application: automotive
Produkt ist nicht verfügbar
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S70KL1282DPBHA020 Infineon-S70KL1282_S70KS1282_3.0_V_1.8_V_128_Mb_(16_MB)_HYPERBUS_INTERFACE_HYPERRAM_(SELF-REFRESH_DRAM)-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9315b7210
Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
Produkt ist nicht verfügbar
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S70KL1282DPBHA023 Infineon-S70KL1282_S70KS1282_3.0_V_1.8_V_128_Mb_(16_MB)_HYPERBUS_INTERFACE_HYPERRAM_(SELF-REFRESH_DRAM)-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9315b7210
Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 166MHz; 35ns; FBGA24; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 166MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.7...3.6V DC
Interface: HyperBus
Produkt ist nicht verfügbar
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S70KS1282GABHA023 Infineon-S70KL1282_S70KS1282_3.0_V_1.8_V_128_Mb_(16_MB)_HYPERBUS_INTERFACE_HYPERRAM_(SELF-REFRESH_DRAM)-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9315b7210
Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 128Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.7...2V DC
Interface: HyperBus
Produkt ist nicht verfügbar
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S80KS2563GABHA020 Infineon-S80KS2563_1.8_V_256-Mb_Octal_xSPI_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd7ad739905af
Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Kind of memory: DRAM
Type of integrated circuit: DRAM memory
Case: FBGA24
Interface: HyperBus
Kind of package: in-tray
Mounting: SMD
Operating temperature: -40...85°C
Access time: 35ns
Supply voltage: 1.7...2V DC
Clock frequency: 200MHz
Memory: 256Mb DRAM
Produkt ist nicht verfügbar
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S80KS5122GABHA020 Infineon-S80KS5122_1.8_V_512-Mbit_HyperBus_Interface_HyperRAM_(Self-Refresh_DRAM)-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7dc4255f017dd81b77c1088f
Hersteller: INFINEON TECHNOLOGIES
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 200MHz; 35ns; FBGA24; -40÷85°C; in-tray
Type of integrated circuit: DRAM memory
Kind of memory: DRAM
Memory: 256Mb DRAM
Clock frequency: 200MHz
Access time: 35ns
Case: FBGA24
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...2V DC
Interface: HyperBus
Produkt ist nicht verfügbar
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IPD60R600P7ATMA1 infineon-ipd60r600p7-datasheet-en.pdf
IPD60R600P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3
Type of transistor: N-MOSFET
On-state resistance: 0.6Ω
Mounting: SMD
Pulsed drain current: 16A
Power dissipation: 30W
Gate charge: 9nC
Polarisation: unipolar
Version: ESD
Technology: CoolMOS™ P7
Drain current: 4A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Case: PG-TO252-3
Produkt ist nicht verfügbar
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BCW66KFE6327 BCW66K.pdf
BCW66KFE6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.5W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Frequency: 170MHz
Produkt ist nicht verfügbar
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BCW66KGE6327HTSA1 bcw66.pdf?folderId=db3a304314dca389011545f4eb561884&fileId=db3a304314dca389011547504ebe1a07
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 800mA; SC59; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Case: SC59
Current gain: 160
Mounting: SMD
Frequency: 170MHz
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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IRFSL3207ZPBF irfs3207zpbf.pdf
IRFSL3207ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 300W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 300W
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
15+5.77 EUR
21+4.22 EUR
25+3.51 EUR
50+3.06 EUR
Mindestbestellmenge: 15 Stücke
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IPD25N06S4L30ATMA2 Infineon-IPD25N06S4L_30-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038898f7b0caa
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 17A; Idm: 92A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 92A
Power dissipation: 29W
Case: PG-TO252-3-11
Gate-source voltage: ±16V
On-state resistance: 30mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS® -T2
Produkt ist nicht verfügbar
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BTS3125EJ BTS3125EJ.pdf
BTS3125EJ
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2A; Ch: 1; N-Channel; SMD; SO8-EP
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8-EP
On-state resistance: 0.25Ω
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Turn-on time: 115µs
Turn-off time: 210µs
Produkt ist nicht verfügbar
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KP229E3111XTMA1 Infineon-KP229E3111-DS-v01_00-EN.pdf?fileId=5546d4624bcaebcf014be98f6a2e3c19
Hersteller: INFINEON TECHNOLOGIES
Category: Pressure Sensors
Description: Sensor: pressure; 20÷300kPa; absolute; OUT: analogue voltage; SMT
Mounting: SMT
Type of sensor: pressure
Operating temperature: -40...140°C
Supply voltage: 4.5...5.5V DC
Pressure measuring range: 20...300kPa
Operation mode: absolute
Output configuration: analogue voltage
Produkt ist nicht verfügbar
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IHW20N120R5XKSA1 IHW20N120R5.pdf
IHW20N120R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 20A; 144W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 144W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Turn-off time: 440ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
auf Bestellung 64 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
18+4.88 EUR
20+4.4 EUR
24+3.63 EUR
Mindestbestellmenge: 18 Stücke
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BSC0504NSIATMA1 BSC0504NSI-DTE.pdf
BSC0504NSIATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 30W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 3.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 30W
Drain current: 64A
Case: PG-TDSON-8
Produkt ist nicht verfügbar
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PVI5080NPBF Infineon-PVI5080N-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801607b6ff8185cd0
PVI5080NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; THT; Ch: 1; OUT: photodiode; 4kV; DIP8; PVI-NPbF
Manufacturer series: PVI-NPbF
Case: DIP8
Mounting: THT
Type of optocoupler: optocoupler
Kind of output: photodiode
Turn-off time: 220µs
Turn-on time: 0.3ms
Number of channels: 1
Insulation voltage: 4kV
auf Bestellung 85 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
12+7.56 EUR
13+6.93 EUR
25+6.08 EUR
Mindestbestellmenge: 12 Stücke
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FM28V020-SG FM28V020-DTE.pdf
FM28V020-SG
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; parallel 8bit; 32kx8bit; 2÷3.6VDC
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: parallel 8bit
Memory organisation: 32kx8bit
Supply voltage: 2...3.6V DC
Access time: 70ns
Case: SO28
Mounting: SMD
Kind of interface: parallel
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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FM28V020-T28G FM28V020-DTE.pdf
FM28V020-T28G
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; parallel 8bit; 32kx8bit; 2÷3.6VDC
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: parallel 8bit
Memory organisation: 32kx8bit
Supply voltage: 2...3.6V DC
Access time: 70ns
Case: TSOP28
Mounting: SMD
Kind of interface: parallel
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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2DIB0400FXUMA1 Infineon-2DIBx40xF-DS-v_1_00-EN.pdf-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c872bd8d60187374172573005
Hersteller: INFINEON TECHNOLOGIES
Category: Unclassified
Description: 2DIB0400FXUMA1
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
2500+0.82 EUR
Mindestbestellmenge: 2500 Stücke
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CY62157EV30LL-45ZSXIT Infineon-CY62157EV30_MoBL_8-Mbit_(512_K_16)_Static_RAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe669131ef&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_4_0
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.2...3.6V
Access time: 45ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Produkt ist nicht verfügbar
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IDH08G65C5
IDH08G65C5
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; PG-TO220-2; 76W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.8V
Max. forward impulse current: 60A
Leakage current: 1.6µA
Power dissipation: 76W
Kind of package: tube
Heatsink thickness: 1.17...137mm
auf Bestellung 437 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
19+4.58 EUR
50+4.28 EUR
Mindestbestellmenge: 19 Stücke
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S29GL01GS11DHIV10 infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Produkt ist nicht verfügbar
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IPA90R500C3XKSA2 Infineon-IPA90R500C3-DS-v01_00-en.pdf?fileId=db3a30431b3e89eb011b8cd1d1b10fb6
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 11A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 11A
Power dissipation: 34W
Case: TO220FP
On-state resistance: 0.5Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 68nC
Produkt ist nicht verfügbar
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IPA90R800C3XKSA1 IPA90R800C3XKSA1-DTE.pdf
IPA90R800C3XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.4A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CY7C64225-28PVXC CY7C64225.PDF
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: interface; USB; SSOP28; 27mA; ESD; RS232
Type of integrated circuit: interface
Interface: USB
Case: SSOP28
Integrated circuit features: bridge
Mounting: SMD
Operating temperature: 0...70°C
Number of channels: 1
DC supply current: 27mA
Version: ESD
Communictions protocol: RS232
auf Bestellung 2565 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
47+4.71 EUR
141+4.24 EUR
Mindestbestellmenge: 47 Stücke
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IRG7PH44K10D-EPBF IRG7PH44K10D-EPBF.pdf
IRG7PH44K10D-EPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 70A; 320W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 70A
Power dissipation: 320W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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