Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (128360) > Seite 2077 nach 2140
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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TT260N22KOFHOSA1 | INFINEON TECHNOLOGIES |
 Category: Thyristor modulesDescription: Module: thyristor; double series; 2.2kV; 260A; BG-PB50AT-1; screw Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 260A Case: BG-PB50AT-1 Max. forward voltage: 1.45V Max. forward impulse current: 8kA Gate current: 200mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IPD90N04S404ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 81A; Idm: 360A Type of transistor: N-MOSFET Technology: OptiMOS™ T2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 81A Power dissipation: 71W Case: PG-TO252-3-313 Gate-source voltage: ±20V On-state resistance: 4.1mΩ Mounting: SMD Kind of channel: enhancement Kind of package: reel Pulsed drain current: 360A Gate charge: 20nC |
auf Bestellung 2207 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD90N04S4L04ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 71W; DPAK,TO252 Type of transistor: N-MOSFET Drain-source voltage: 40V Drain current: 90A Power dissipation: 71W Case: DPAK; TO252 On-state resistance: 3.2mΩ Mounting: SMD Kind of channel: enhancement Application: automotive industry Polarisation: unipolar Gate charge: 60nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SPD50N03S207GBTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 136W; PG-TO252-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 50A Power dissipation: 136W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 7.3mΩ Mounting: SMD Kind of channel: enhancement |
auf Bestellung 1328 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD050N03LGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO252-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 50A Power dissipation: 68W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Kind of channel: enhancement |
auf Bestellung 1132 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IPD50N03S4L06ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 56W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 50A Power dissipation: 56W Case: DPAK; TO252 On-state resistance: 4.9mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 31nC Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BSC050N03LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 66A; 50W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 66A Power dissipation: 50W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BSZ050N03LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 50W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Power dissipation: 50W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Kind of channel: enhancement |
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IPP050N03LF2SAKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 53A; 65W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 53A Power dissipation: 65W Case: TO220-3 On-state resistance: 4.95mΩ Mounting: THT Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BSC050N03MSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 72A; 50W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 72A Power dissipation: 50W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Kind of channel: enhancement |
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BSZ050N03MSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Power dissipation: 48W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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IRS44273LTRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; low-side,gate driver; SOT23-5 Type of integrated circuit: driver Topology: single transistor Mounting: SMD Supply voltage: 9.2...20V DC Output current: -1.5...1.5A Operating temperature: -40...125°C Turn-on time: 50ns Power: 0.25W Kind of package: reel; tape Case: SOT23-5 Turn-off time: 50ns Kind of integrated circuit: gate driver; low-side Number of channels: 1 |
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IPF016N10NF2SATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 274A; 300W; D2PAK-7 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 274A Power dissipation: 300W Case: D2PAK-7 On-state resistance: 1.6mΩ Mounting: SMD Gate charge: 161nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IMZ120R030M1HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 150A; 114W Mounting: THT Case: TO247-4 Pulsed drain current: 150A Power dissipation: 114W Polarisation: unipolar Technology: CoolSiC™; SiC Features of semiconductor devices: Kelvin terminal Drain current: 45A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -7...23V Kind of package: tube On-state resistance: 57mΩ |
auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |
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IR2132SPBF | INFINEON TECHNOLOGIES |
 Category: MOSFET/IGBT driversDescription: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Type of integrated circuit: driver Topology: IGBT three-phase bridge; MOSFET three-phase bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO28-W Output current: -420...200mA Power: 1.6W Number of channels: 6 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 675ns Turn-off time: 475ns |
auf Bestellung 16 Stücke: Lieferzeit 14-21 Tag (e) |
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| IR2132JTRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,low-side; PLCC44; 200mA; Ch: 6; MOSFET; 10÷20V Type of integrated circuit: driver Mounting: SMD Case: PLCC44 Operating temperature: -40...125°C Input voltage: 10...20V Output current: 0.2A Integrated circuit features: MOSFET Kind of integrated circuit: high-side; low-side Number of channels: 6 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IR2132STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Operating temperature: -40...125°C Case: SO28-W Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Topology: IGBT three-phase bridge; MOSFET three-phase bridge Mounting: SMD Output current: -420...200mA Turn-off time: 475ns Turn-on time: 675ns Power: 1.6W Supply voltage: 10...20V DC Number of channels: 6 Voltage class: 600V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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IRFS31N20DTRLP | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 31A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 31A Power dissipation: 200W Case: D2PAK Gate-source voltage: ±20V Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRFP4332PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 57A; 360W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 250V Drain current: 57A Power dissipation: 360W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 33mΩ Mounting: THT Gate charge: 99nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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IRFU4510PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 143W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 63A Case: IPAK Mounting: THT Kind of channel: enhancement Power dissipation: 143W Technology: HEXFET® |
auf Bestellung 905 Stücke: Lieferzeit 14-21 Tag (e) |
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IR21834STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,low-side; SOIC14; Ch: 2; MOSFET; Uin: 10÷20V Type of integrated circuit: driver Kind of integrated circuit: high-side; low-side Case: SOIC14 Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Voltage class: 600V Input voltage: 10...20V Integrated circuit features: MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IR2183STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,low-side; SOIC8; 1.9A; Ch: 2; MOSFET; 10÷20V Type of integrated circuit: driver Kind of integrated circuit: high-side; low-side Case: SOIC8 Output current: 1.9A Number of channels: 2 Integrated circuit features: MOSFET Mounting: SMD Operating temperature: -40...125°C Input voltage: 10...20V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| AUIRG4PH50SXKMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: P-MOSFET Type of transistor: P-MOSFET |
auf Bestellung 1375 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IGW40N120H3FKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 483W; TO247-3; H3 Type of transistor: IGBT Technology: TRENCHSTOP™ 3 Power dissipation: 483W Case: TO247-3 Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 40A Manufacturer series: H3 Collector-emitter voltage: 1.2kV |
auf Bestellung 248 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IKW40N120CS6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ 6 Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 250W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 285nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IKQ40N120CT2XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 133W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ 2 Power dissipation: 133W Case: TO247-3 Mounting: THT Kind of package: tube Pulsed collector current: 40A Turn-on time: 75ns Turn-off time: 379ns Gate-emitter voltage: ±20V Collector current: 40A Collector-emitter voltage: 1.2kV Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 179 Stücke: Lieferzeit 14-21 Tag (e) |
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IKQ40N120CH3XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247-3; H3 Type of transistor: IGBT Power dissipation: 136W Case: TO247-3 Mounting: THT Kind of package: tube Pulsed collector current: 40A Turn-on time: 76ns Turn-off time: 331ns Gate-emitter voltage: ±20V Collector current: 40A Manufacturer series: H3 Collector-emitter voltage: 1.2kV Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IKW40N120CS7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 56A; 179W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 179W Case: TO247-3 Mounting: THT Gate charge: 230nC Kind of package: tube Pulsed collector current: 120A Turn-on time: 45ns Turn-off time: 0.5µs Gate-emitter voltage: ±20V Collector current: 56A Collector-emitter voltage: 1.2kV Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| IKY40N120CH3XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247PLUS-4; H3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 136W Case: TO247PLUS-4 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 0.19µC Kind of package: tube Turn-on time: 59ns Turn-off time: 306ns Features of semiconductor devices: integrated anti-parallel diode Manufacturer series: H3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| IKY40N120CS6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247PLUS-4 Type of transistor: IGBT Technology: TRENCHSTOP™ 6 Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 250W Case: TO247PLUS-4 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 285nC Kind of package: tube Turn-on time: 54ns Turn-off time: 342ns Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| FP40R12KT3BOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 40A Case: AG-ECONO2-5 Application: Inverter Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 80A Power dissipation: 210W Technology: EconoPIM™ 2 Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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BTS740S2 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 5.5÷8.5A; Ch: 2; N-Channel; SMD; SO20-W Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 5.5...8.5A Number of channels: 2 Kind of output: N-Channel Mounting: SMD Case: SO20-W On-state resistance: 15mΩ Supply voltage: 5...34V DC Technology: Classic PROFET |
auf Bestellung 754 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IPD70N03S4L04ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 70A; 68W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 70A Power dissipation: 68W Case: DPAK; TO252 On-state resistance: 3.6mΩ Mounting: SMD Gate charge: 48nC Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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FM24C16B-G | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuits Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 4.5÷5.5VDC; 1MHz; SO8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Interface: I2C Memory organisation: 2kx8bit Mounting: SMD Case: SO8 Kind of interface: serial Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Clock frequency: 1MHz Memory: 16kb FRAM |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2910 Stücke Im Einkaufswagen Stück im Wert von UAH |
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FM24C16B-GTR | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuits Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 4.5÷5.5VDC; 1MHz; SO8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Interface: I2C Memory organisation: 2kx8bit Mounting: SMD Case: SO8 Kind of interface: serial Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Clock frequency: 1MHz Memory: 16kb FRAM |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BAS7007E6327 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT143; SMD; 70V; 70mA; 250mW Type of diode: Schottky switching Case: SOT143 Mounting: SMD Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: double independent Max. forward voltage: 1V Max. forward impulse current: 0.1A Power dissipation: 0.25W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| CY7C1312KV18-250BZXCT | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; FBGA165; parallel; 0÷70°C Type of integrated circuit: SRAM memory Mounting: SMD Case: FBGA165 Operating temperature: 0...70°C Kind of package: reel; tape Frequency: 250MHz Kind of interface: parallel Kind of memory: SRAM Supply voltage: 1.7...1.9V DC Memory: 18Mb SRAM Memory organisation: 1Mx18bit |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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BTS640S2G | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 11.4A; Ch: 1; N-Channel; SMD; TO263-7 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 11.4A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: TO263-7 On-state resistance: 27mΩ Supply voltage: 5...34V DC Technology: Classic PROFET |
auf Bestellung 211 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRF2804PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 280A; 330W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 280A Power dissipation: 330W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.3mΩ Mounting: THT Gate charge: 160nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 352 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFTS9342TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; 2W; TSOP6 Case: TSOP6 Mounting: SMD Polarisation: unipolar Technology: HEXFET® Drain current: -5.8A Kind of channel: enhancement Drain-source voltage: -30V Type of transistor: P-MOSFET Kind of package: reel Power dissipation: 2W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRLTS2242TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6.9A; 2W; TSOP6 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -6.9A Power dissipation: 2W Case: TSOP6 Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 930 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRLTS6342TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; 2W; TSOP6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 8.3A Power dissipation: 2W Case: TSOP6 Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 212 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRF5801TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 0.6A; 2W; TSOP6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 0.6A Power dissipation: 2W Case: TSOP6 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
auf Bestellung 824 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRF5802TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 0.9A; 2W; TSOP6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 0.9A Power dissipation: 2W Case: TSOP6 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
auf Bestellung 771 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IPD034N06N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 167W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 3.4mΩ Mounting: SMD Kind of channel: enhancement |
auf Bestellung 552 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IPB014N06NATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 214W; PG-TO263-7 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 180A Power dissipation: 214W Case: PG-TO263-7 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Kind of channel: enhancement |
auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IPP014N06NF2SAKMA2 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 198A; 300W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 198A Power dissipation: 300W Case: TO220-3 On-state resistance: 1.4mΩ Mounting: THT Gate charge: 203nC Kind of channel: enhancement |
auf Bestellung 38 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BSC014N06NSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 156W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 156W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IPB054N06N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 115W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 80A Power dissipation: 115W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 5.4mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BSC034N06NSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 74W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 74W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 3.4mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IPB034N06N3GATMA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; TO263-7 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 167W Case: TO263-7 Mounting: SMD Gate charge: 130nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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BAR66E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: switching; 150V; 200mA; SOT23; double series; Ifsm: 12A Semiconductor structure: double series Case: SOT23 Type of diode: switching Mounting: SMD Max. forward impulse current: 12A Max. forward voltage: 1.2V Features of semiconductor devices: PIN Max. off-state voltage: 150V Load current: 0.2A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BAR6303WE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: switching; 50V; 100mA; SOD323; single diode; Ufmax: 1.2V Type of diode: switching Max. off-state voltage: 50V Load current: 0.1A Case: SOD323 Mounting: SMD Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Max. forward voltage: 1.2V Kind of package: reel; tape |
auf Bestellung 63 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BAR6404E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: switching; 150V; 100mA; SOT23; double series; Ufmax: 1.1V Max. forward voltage: 1.1V Features of semiconductor devices: PIN; RF Max. off-state voltage: 150V Load current: 0.1A Kind of package: reel; tape Semiconductor structure: double series Case: SOT23 Type of diode: switching Mounting: SMD |
auf Bestellung 992 Stücke: Lieferzeit 14-21 Tag (e) |
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BAR6402VH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: switching; 150V; 100mA; SC79; single diode; Ufmax: 1.1V Max. forward voltage: 1.1V Features of semiconductor devices: PIN; RF Max. off-state voltage: 150V Load current: 0.1A Kind of package: reel; tape Semiconductor structure: single diode Case: SC79 Type of diode: switching Mounting: SMD |
auf Bestellung 665 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BAR6302VH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: switching; 50V; 100mA; SC79; single diode; Ufmax: 1.2V Type of diode: switching Max. off-state voltage: 50V Load current: 0.1A Case: SC79 Mounting: SMD Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Max. forward voltage: 1.2V Kind of package: reel; tape |
auf Bestellung 2690 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BAR6402VH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: switching; 150V; 100mA; SC79; single diode; Ufmax: 1.1V Max. forward voltage: 1.1V Features of semiconductor devices: PIN; RF Max. off-state voltage: 150V Load current: 0.1A Kind of package: reel; tape Semiconductor structure: single diode Case: SC79 Type of diode: switching Mounting: SMD |
auf Bestellung 108 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| BAR6502VH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: varicap; 30V; 100mA; SC79; single diode; Ufmax: 1V; reel,tape Case: SC79 Capacitance: 0.5pF Type of diode: varicap Mounting: SMD Max. forward voltage: 1V Features of semiconductor devices: PIN; RF Max. off-state voltage: 30V Load current: 0.1A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 20nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| BAR6405E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodes Description: Diode: switching; SMD; 150V; 0.1A; 250mW; automotive industry Type of diode: switching Mounting: SMD Power dissipation: 0.25W Application: automotive industry Max. off-state voltage: 150V Load current: 0.1A Semiconductor structure: common cathode |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| BAR6404WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodes Description: Diode: switching; SMD; 150V; 0.1A; Ufmax: 1.1V; 250mW Type of diode: switching Mounting: SMD Max. forward voltage: 1.1V Power dissipation: 0.25W Application: automotive industry Max. off-state voltage: 150V Load current: 0.1A Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| TT260N22KOFHOSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 260A; BG-PB50AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 260A
Case: BG-PB50AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 8kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 260A; BG-PB50AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 260A
Case: BG-PB50AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 8kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPD90N04S404ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 81A; Idm: 360A
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 81A
Power dissipation: 71W
Case: PG-TO252-3-313
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Pulsed drain current: 360A
Gate charge: 20nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 81A; Idm: 360A
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 81A
Power dissipation: 71W
Case: PG-TO252-3-313
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Pulsed drain current: 360A
Gate charge: 20nC
auf Bestellung 2207 Stücke:
Lieferzeit 14-21 Tag (e)
| IPD90N04S4L04ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 71W; DPAK,TO252
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 71W
Case: DPAK; TO252
On-state resistance: 3.2mΩ
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Polarisation: unipolar
Gate charge: 60nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 71W; DPAK,TO252
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 71W
Case: DPAK; TO252
On-state resistance: 3.2mΩ
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Polarisation: unipolar
Gate charge: 60nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SPD50N03S207GBTMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 136W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 136W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1328 Stücke:
Lieferzeit 14-21 Tag (e)
| IPD050N03LGATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 68W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 68W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1132 Stücke:
Lieferzeit 14-21 Tag (e)
| IPD50N03S4L06ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 56W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 56W
Case: DPAK; TO252
On-state resistance: 4.9mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 31nC
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 56W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 56W
Case: DPAK; TO252
On-state resistance: 4.9mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 31nC
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSC050N03LSGATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 66A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 66A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 66A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 66A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSZ050N03LSGATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPP050N03LF2SAKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 53A; 65W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 53A
Power dissipation: 65W
Case: TO220-3
On-state resistance: 4.95mΩ
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 53A; 65W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 53A
Power dissipation: 65W
Case: TO220-3
On-state resistance: 4.95mΩ
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSC050N03MSGATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 72A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 72A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 72A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 72A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSZ050N03MSGATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRS44273LTRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; SOT23-5
Type of integrated circuit: driver
Topology: single transistor
Mounting: SMD
Supply voltage: 9.2...20V DC
Output current: -1.5...1.5A
Operating temperature: -40...125°C
Turn-on time: 50ns
Power: 0.25W
Kind of package: reel; tape
Case: SOT23-5
Turn-off time: 50ns
Kind of integrated circuit: gate driver; low-side
Number of channels: 1
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; SOT23-5
Type of integrated circuit: driver
Topology: single transistor
Mounting: SMD
Supply voltage: 9.2...20V DC
Output current: -1.5...1.5A
Operating temperature: -40...125°C
Turn-on time: 50ns
Power: 0.25W
Kind of package: reel; tape
Case: SOT23-5
Turn-off time: 50ns
Kind of integrated circuit: gate driver; low-side
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPF016N10NF2SATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 274A; 300W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 274A
Power dissipation: 300W
Case: D2PAK-7
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 161nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 274A; 300W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 274A
Power dissipation: 300W
Case: D2PAK-7
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 161nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IMZ120R030M1HXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 150A; 114W
Mounting: THT
Case: TO247-4
Pulsed drain current: 150A
Power dissipation: 114W
Polarisation: unipolar
Technology: CoolSiC™; SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 45A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -7...23V
Kind of package: tube
On-state resistance: 57mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 150A; 114W
Mounting: THT
Case: TO247-4
Pulsed drain current: 150A
Power dissipation: 114W
Polarisation: unipolar
Technology: CoolSiC™; SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 45A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -7...23V
Kind of package: tube
On-state resistance: 57mΩ
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
| IR2132SPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 675ns
Turn-off time: 475ns
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28-W
Output current: -420...200mA
Power: 1.6W
Number of channels: 6
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 675ns
Turn-off time: 475ns
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
| IR2132JTRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; PLCC44; 200mA; Ch: 6; MOSFET; 10÷20V
Type of integrated circuit: driver
Mounting: SMD
Case: PLCC44
Operating temperature: -40...125°C
Input voltage: 10...20V
Output current: 0.2A
Integrated circuit features: MOSFET
Kind of integrated circuit: high-side; low-side
Number of channels: 6
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; PLCC44; 200mA; Ch: 6; MOSFET; 10÷20V
Type of integrated circuit: driver
Mounting: SMD
Case: PLCC44
Operating temperature: -40...125°C
Input voltage: 10...20V
Output current: 0.2A
Integrated circuit features: MOSFET
Kind of integrated circuit: high-side; low-side
Number of channels: 6
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IR2132STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Operating temperature: -40...125°C
Case: SO28-W
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Mounting: SMD
Output current: -420...200mA
Turn-off time: 475ns
Turn-on time: 675ns
Power: 1.6W
Supply voltage: 10...20V DC
Number of channels: 6
Voltage class: 600V
Kind of package: reel; tape
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Operating temperature: -40...125°C
Case: SO28-W
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Mounting: SMD
Output current: -420...200mA
Turn-off time: 475ns
Turn-on time: 675ns
Power: 1.6W
Supply voltage: 10...20V DC
Number of channels: 6
Voltage class: 600V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFS31N20DTRLP |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 31A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 31A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 31A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 31A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| IRFP4332PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 57A; 360W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 57A
Power dissipation: 360W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 99nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 57A; 360W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 57A
Power dissipation: 360W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 99nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFU4510PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 143W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Case: IPAK
Mounting: THT
Kind of channel: enhancement
Power dissipation: 143W
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 143W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Case: IPAK
Mounting: THT
Kind of channel: enhancement
Power dissipation: 143W
Technology: HEXFET®
auf Bestellung 905 Stücke:
Lieferzeit 14-21 Tag (e)
| IR21834STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC14; Ch: 2; MOSFET; Uin: 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC14
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 600V
Input voltage: 10...20V
Integrated circuit features: MOSFET
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC14; Ch: 2; MOSFET; Uin: 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC14
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 600V
Input voltage: 10...20V
Integrated circuit features: MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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Stück im Wert von UAH
| IR2183STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1.9A; Ch: 2; MOSFET; 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 1.9A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1.9A; Ch: 2; MOSFET; 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 1.9A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AUIRG4PH50SXKMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
Category: SMD N channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
auf Bestellung 1375 Stücke:
Lieferzeit 14-21 Tag (e)
| IGW40N120H3FKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 483W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 483W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Manufacturer series: H3
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 483W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 483W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Manufacturer series: H3
Collector-emitter voltage: 1.2kV
auf Bestellung 248 Stücke:
Lieferzeit 14-21 Tag (e)
| IKW40N120CS6XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IKQ40N120CT2XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 133W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 2
Power dissipation: 133W
Case: TO247-3
Mounting: THT
Kind of package: tube
Pulsed collector current: 40A
Turn-on time: 75ns
Turn-off time: 379ns
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 133W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 2
Power dissipation: 133W
Case: TO247-3
Mounting: THT
Kind of package: tube
Pulsed collector current: 40A
Turn-on time: 75ns
Turn-off time: 379ns
Gate-emitter voltage: ±20V
Collector current: 40A
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 179 Stücke:
Lieferzeit 14-21 Tag (e)
| IKQ40N120CH3XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247-3; H3
Type of transistor: IGBT
Power dissipation: 136W
Case: TO247-3
Mounting: THT
Kind of package: tube
Pulsed collector current: 40A
Turn-on time: 76ns
Turn-off time: 331ns
Gate-emitter voltage: ±20V
Collector current: 40A
Manufacturer series: H3
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247-3; H3
Type of transistor: IGBT
Power dissipation: 136W
Case: TO247-3
Mounting: THT
Kind of package: tube
Pulsed collector current: 40A
Turn-on time: 76ns
Turn-off time: 331ns
Gate-emitter voltage: ±20V
Collector current: 40A
Manufacturer series: H3
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IKW40N120CS7XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 56A; 179W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 179W
Case: TO247-3
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Pulsed collector current: 120A
Turn-on time: 45ns
Turn-off time: 0.5µs
Gate-emitter voltage: ±20V
Collector current: 56A
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 56A; 179W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 179W
Case: TO247-3
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Pulsed collector current: 120A
Turn-on time: 45ns
Turn-off time: 0.5µs
Gate-emitter voltage: ±20V
Collector current: 56A
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IKY40N120CH3XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247PLUS-4; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 136W
Case: TO247PLUS-4
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 306ns
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H3
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247PLUS-4; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 136W
Case: TO247PLUS-4
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 306ns
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IKY40N120CS6XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247PLUS-4
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 250W
Case: TO247PLUS-4
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 342ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247PLUS-4
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 250W
Case: TO247PLUS-4
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 342ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FP40R12KT3BOSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: AG-ECONO2-5
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Power dissipation: 210W
Technology: EconoPIM™ 2
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 40A
Case: AG-ECONO2-5
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Power dissipation: 210W
Technology: EconoPIM™ 2
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTS740S2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.5÷8.5A; Ch: 2; N-Channel; SMD; SO20-W
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.5...8.5A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO20-W
On-state resistance: 15mΩ
Supply voltage: 5...34V DC
Technology: Classic PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.5÷8.5A; Ch: 2; N-Channel; SMD; SO20-W
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.5...8.5A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO20-W
On-state resistance: 15mΩ
Supply voltage: 5...34V DC
Technology: Classic PROFET
auf Bestellung 754 Stücke:
Lieferzeit 14-21 Tag (e)
| IPD70N03S4L04ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 70A; 68W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 70A
Power dissipation: 68W
Case: DPAK; TO252
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 48nC
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 70A; 68W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 70A
Power dissipation: 68W
Case: DPAK; TO252
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 48nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FM24C16B-G |
|
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 4.5÷5.5VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Interface: I2C
Memory organisation: 2kx8bit
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Clock frequency: 1MHz
Memory: 16kb FRAM
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 4.5÷5.5VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Interface: I2C
Memory organisation: 2kx8bit
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Clock frequency: 1MHz
Memory: 16kb FRAM
Produkt ist nicht verfügbar
Mindestbestellmenge: 2910 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FM24C16B-GTR |
|
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 4.5÷5.5VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Interface: I2C
Memory organisation: 2kx8bit
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Clock frequency: 1MHz
Memory: 16kb FRAM
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 4.5÷5.5VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Interface: I2C
Memory organisation: 2kx8bit
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Clock frequency: 1MHz
Memory: 16kb FRAM
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BAS7007E6327 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SOT143
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double independent
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT143; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SOT143
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double independent
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY7C1312KV18-250BZXCT |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Mounting: SMD
Case: FBGA165
Operating temperature: 0...70°C
Kind of package: reel; tape
Frequency: 250MHz
Kind of interface: parallel
Kind of memory: SRAM
Supply voltage: 1.7...1.9V DC
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Mounting: SMD
Case: FBGA165
Operating temperature: 0...70°C
Kind of package: reel; tape
Frequency: 250MHz
Kind of interface: parallel
Kind of memory: SRAM
Supply voltage: 1.7...1.9V DC
Memory: 18Mb SRAM
Memory organisation: 1Mx18bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BTS640S2G |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 11.4A; Ch: 1; N-Channel; SMD; TO263-7
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 11.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO263-7
On-state resistance: 27mΩ
Supply voltage: 5...34V DC
Technology: Classic PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 11.4A; Ch: 1; N-Channel; SMD; TO263-7
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 11.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO263-7
On-state resistance: 27mΩ
Supply voltage: 5...34V DC
Technology: Classic PROFET
auf Bestellung 211 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF2804PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 280A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 280A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 280A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 280A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 352 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFTS9342TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Polarisation: unipolar
Technology: HEXFET®
Drain current: -5.8A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Kind of package: reel
Power dissipation: 2W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; 2W; TSOP6
Case: TSOP6
Mounting: SMD
Polarisation: unipolar
Technology: HEXFET®
Drain current: -5.8A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Kind of package: reel
Power dissipation: 2W
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
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| IRLTS2242TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.9A; 2W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.9A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.9A; 2W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.9A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 930 Stücke:
Lieferzeit 14-21 Tag (e)
| IRLTS6342TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.3A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.3A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.3A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 212 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF5801TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.6A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.6A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.6A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.6A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 824 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF5802TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 0.9A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 0.9A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 0.9A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 0.9A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 771 Stücke:
Lieferzeit 14-21 Tag (e)
| IPD034N06N3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 167W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 167W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 552 Stücke:
Lieferzeit 14-21 Tag (e)
| IPB014N06NATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 214W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Power dissipation: 214W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 214W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Power dissipation: 214W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
| IPP014N06NF2SAKMA2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 198A; 300W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 198A
Power dissipation: 300W
Case: TO220-3
On-state resistance: 1.4mΩ
Mounting: THT
Gate charge: 203nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 198A; 300W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 198A
Power dissipation: 300W
Case: TO220-3
On-state resistance: 1.4mΩ
Mounting: THT
Gate charge: 203nC
Kind of channel: enhancement
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
| BSC014N06NSATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPB054N06N3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 115W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 115W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 115W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 115W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSC034N06NSATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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Stück im Wert von UAH
| IPB034N06N3GATMA2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 167W
Case: TO263-7
Mounting: SMD
Gate charge: 130nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 167W
Case: TO263-7
Mounting: SMD
Gate charge: 130nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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Stück im Wert von UAH
| BAR66E6327HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 200mA; SOT23; double series; Ifsm: 12A
Semiconductor structure: double series
Case: SOT23
Type of diode: switching
Mounting: SMD
Max. forward impulse current: 12A
Max. forward voltage: 1.2V
Features of semiconductor devices: PIN
Max. off-state voltage: 150V
Load current: 0.2A
Kind of package: reel; tape
Category: Diodes - others
Description: Diode: switching; 150V; 200mA; SOT23; double series; Ifsm: 12A
Semiconductor structure: double series
Case: SOT23
Type of diode: switching
Mounting: SMD
Max. forward impulse current: 12A
Max. forward voltage: 1.2V
Features of semiconductor devices: PIN
Max. off-state voltage: 150V
Load current: 0.2A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAR6303WE6327HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; SOD323; single diode; Ufmax: 1.2V
Type of diode: switching
Max. off-state voltage: 50V
Load current: 0.1A
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1.2V
Kind of package: reel; tape
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; SOD323; single diode; Ufmax: 1.2V
Type of diode: switching
Max. off-state voltage: 50V
Load current: 0.1A
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1.2V
Kind of package: reel; tape
auf Bestellung 63 Stücke:
Lieferzeit 14-21 Tag (e)
| BAR6404E6327HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; SOT23; double series; Ufmax: 1.1V
Max. forward voltage: 1.1V
Features of semiconductor devices: PIN; RF
Max. off-state voltage: 150V
Load current: 0.1A
Kind of package: reel; tape
Semiconductor structure: double series
Case: SOT23
Type of diode: switching
Mounting: SMD
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; SOT23; double series; Ufmax: 1.1V
Max. forward voltage: 1.1V
Features of semiconductor devices: PIN; RF
Max. off-state voltage: 150V
Load current: 0.1A
Kind of package: reel; tape
Semiconductor structure: double series
Case: SOT23
Type of diode: switching
Mounting: SMD
auf Bestellung 992 Stücke:
Lieferzeit 14-21 Tag (e)
| BAR6402VH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; SC79; single diode; Ufmax: 1.1V
Max. forward voltage: 1.1V
Features of semiconductor devices: PIN; RF
Max. off-state voltage: 150V
Load current: 0.1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SC79
Type of diode: switching
Mounting: SMD
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; SC79; single diode; Ufmax: 1.1V
Max. forward voltage: 1.1V
Features of semiconductor devices: PIN; RF
Max. off-state voltage: 150V
Load current: 0.1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SC79
Type of diode: switching
Mounting: SMD
auf Bestellung 665 Stücke:
Lieferzeit 14-21 Tag (e)
| BAR6302VH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; SC79; single diode; Ufmax: 1.2V
Type of diode: switching
Max. off-state voltage: 50V
Load current: 0.1A
Case: SC79
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1.2V
Kind of package: reel; tape
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; SC79; single diode; Ufmax: 1.2V
Type of diode: switching
Max. off-state voltage: 50V
Load current: 0.1A
Case: SC79
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1.2V
Kind of package: reel; tape
auf Bestellung 2690 Stücke:
Lieferzeit 14-21 Tag (e)
| BAR6402VH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; SC79; single diode; Ufmax: 1.1V
Max. forward voltage: 1.1V
Features of semiconductor devices: PIN; RF
Max. off-state voltage: 150V
Load current: 0.1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SC79
Type of diode: switching
Mounting: SMD
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; SC79; single diode; Ufmax: 1.1V
Max. forward voltage: 1.1V
Features of semiconductor devices: PIN; RF
Max. off-state voltage: 150V
Load current: 0.1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SC79
Type of diode: switching
Mounting: SMD
auf Bestellung 108 Stücke:
Lieferzeit 14-21 Tag (e)
| BAR6502VH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 30V; 100mA; SC79; single diode; Ufmax: 1V; reel,tape
Case: SC79
Capacitance: 0.5pF
Type of diode: varicap
Mounting: SMD
Max. forward voltage: 1V
Features of semiconductor devices: PIN; RF
Max. off-state voltage: 30V
Load current: 0.1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 20nA
Category: Diodes - others
Description: Diode: varicap; 30V; 100mA; SC79; single diode; Ufmax: 1V; reel,tape
Case: SC79
Capacitance: 0.5pF
Type of diode: varicap
Mounting: SMD
Max. forward voltage: 1V
Features of semiconductor devices: PIN; RF
Max. off-state voltage: 30V
Load current: 0.1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 20nA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAR6405E6327HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 0.1A; 250mW; automotive industry
Type of diode: switching
Mounting: SMD
Power dissipation: 0.25W
Application: automotive industry
Max. off-state voltage: 150V
Load current: 0.1A
Semiconductor structure: common cathode
Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 0.1A; 250mW; automotive industry
Type of diode: switching
Mounting: SMD
Power dissipation: 0.25W
Application: automotive industry
Max. off-state voltage: 150V
Load current: 0.1A
Semiconductor structure: common cathode
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| BAR6404WH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 0.1A; Ufmax: 1.1V; 250mW
Type of diode: switching
Mounting: SMD
Max. forward voltage: 1.1V
Power dissipation: 0.25W
Application: automotive industry
Max. off-state voltage: 150V
Load current: 0.1A
Semiconductor structure: single diode
Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 0.1A; Ufmax: 1.1V; 250mW
Type of diode: switching
Mounting: SMD
Max. forward voltage: 1.1V
Power dissipation: 0.25W
Application: automotive industry
Max. off-state voltage: 150V
Load current: 0.1A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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