Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (129161) > Seite 2077 nach 2153
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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IPD70R360P7SAUMA1 | INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 700V Drain current: 7.5A Power dissipation: 59.5W Case: PG-TO252-3 Gate-source voltage: ±16V On-state resistance: 0.36Ω Mounting: SMD Kind of channel: enhancement |
auf Bestellung 2495 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRFP90N20DPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 94A; 580W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 94A Power dissipation: 580W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 23mΩ Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® |
auf Bestellung 292 Stücke: Lieferzeit 14-21 Tag (e) |
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CY7C65632-48AXC | INFINEON TECHNOLOGIES |
Category: USB interfaces - integrated circuits Description: IC: HUB controller; GPIO,I2C,SPI,USB 2.0; 3.15÷3.45VDC; TQFP48 Type of integrated circuit: HUB controller Case: TQFP48 Mounting: SMD Interface: GPIO; I2C; SPI; USB 2.0 Supply voltage: 3.15...3.45V DC Operating temperature: 0...70°C Integrated circuit features: USB HUB Kind of core: 8-bit |
Produkt ist nicht verfügbar |
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| CY7C65632-28LTXC | INFINEON TECHNOLOGIES |
Category: USB interfaces - integrated circuits Description: IC: HUB controller; GPIO,I2C,SPI,USB 2.0; 3.15÷3.45VDC; QFN28 Type of integrated circuit: HUB controller Interface: GPIO; I2C; SPI; USB 2.0 Mounting: SMD Operating temperature: 0...70°C Supply voltage: 3.15...3.45V DC Case: QFN28 Integrated circuit features: USB HUB Kind of core: 8-bit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| CY7C65632-28LTXCT | INFINEON TECHNOLOGIES |
Category: USB interfaces - integrated circuits Description: IC: HUB controller; GPIO,I2C,SPI,USB 2.0; 3.15÷3.45VDC; QFN28 Type of integrated circuit: HUB controller Interface: GPIO; I2C; SPI; USB 2.0 Mounting: SMD Operating temperature: 0...70°C Supply voltage: 3.15...3.45V DC Case: QFN28 Integrated circuit features: USB HUB Kind of core: 8-bit |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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CY7C65642-48AXC | INFINEON TECHNOLOGIES |
Category: USB interfaces - integrated circuits Description: IC: HUB controller; GPIO,I2C,SPI,USB 2.0; 3.15÷3.45VDC; TQFP48 Type of integrated circuit: HUB controller Interface: GPIO; I2C; SPI; USB 2.0 Mounting: SMD Operating temperature: 0...70°C Supply voltage: 3.15...3.45V DC Case: TQFP48 Integrated circuit features: USB HUB Kind of core: 8-bit |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH |
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CY7C65642-48AXCT | INFINEON TECHNOLOGIES |
Category: USB interfaces - integrated circuits Description: IC: HUB controller; GPIO,I2C,SPI,USB 2.0; 3.15÷3.45VDC; TQFP48 Type of integrated circuit: HUB controller Interface: GPIO; I2C; SPI; USB 2.0 Mounting: SMD Operating temperature: 0...70°C Supply voltage: 3.15...3.45V DC Case: TQFP48 Integrated circuit features: USB HUB Kind of core: 8-bit |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IR2011SPBF | INFINEON TECHNOLOGIES |
 Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 200V Turn-on time: 80ns Turn-off time: 60ns Output current: -1...1A |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IR2010PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: DIP14 Output current: -3...3A Power: 1.6W Number of channels: 2 Supply voltage: 10...20V DC Integrated circuit features: charge pump; dead time; integrated bootstrap functionality Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 200V Turn-on time: 95ns Turn-off time: 65ns |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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IR2011PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: DIP8 Output current: -1...1A Power: 1W Number of channels: 2 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 200V Turn-on time: 80ns Turn-off time: 60ns |
auf Bestellung 34 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR166E6327 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ Mounting: SMD Case: SOT23 Type of transistor: PNP Collector current: 0.1A Power dissipation: 0.2W Collector-emitter voltage: 50V Base-emitter resistor: 47kΩ Base resistor: 4.7kΩ Frequency: 160MHz Polarisation: bipolar Kind of transistor: BRT |
auf Bestellung 36 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BCR162E6327 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ Collector-emitter voltage: 50V Base resistor: 4.7kΩ Power dissipation: 0.2W Polarisation: bipolar Kind of transistor: BRT Type of transistor: PNP Base-emitter resistor: 4.7kΩ Case: SOT23 Frequency: 200MHz Collector current: 0.1A Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BSC123N08NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 66W; PG-TDSON-8 Case: PG-TDSON-8 Mounting: SMD Power dissipation: 66W Polarisation: unipolar Technology: OptiMOS™ 3 Drain current: 55A Kind of channel: enhancement Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 12.3mΩ |
auf Bestellung 4920 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BTS50080-1TEA | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 10A; Ch: 1; N-Channel; SMD Type of integrated circuit: power switch Case: PG-TO252-5-11 Mounting: SMD Supply voltage: 5.5...30V DC Output current: 10A Kind of output: N-Channel Technology: High Current PROFET Output voltage: 39V Kind of integrated circuit: high-side Number of channels: 1 On-state resistance: 16mΩ |
auf Bestellung 1610 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BTS50080-1TMA | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 9.5A; Ch: 1; N-Channel; SMD Type of integrated circuit: power switch Case: PG-TO220-7-4 Mounting: SMD Supply voltage: 5.5...38V DC Output current: 9.5A Kind of output: N-Channel Technology: High Current PROFET Kind of integrated circuit: high-side Number of channels: 1 On-state resistance: 7mΩ |
auf Bestellung 21 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IPP045N10N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO220-3 Mounting: THT Polarisation: unipolar Technology: OptiMOS™ 3 Drain current: 100A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: PG-TO220-3 On-state resistance: 4.5mΩ Power dissipation: 214W |
auf Bestellung 461 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRF7805ZTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 16A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRF3205ZPBFXKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 78A; 170W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 78A Power dissipation: 170W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IRLR3410TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK Mounting: SMD Kind of package: reel Power dissipation: 52W Polarisation: unipolar Technology: HEXFET® Features of semiconductor devices: logic level Drain current: 15A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Case: DPAK |
auf Bestellung 1624 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRLR7843TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 161A; 140W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 161A Power dissipation: 140W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 1261 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FP15R12W1T4_B3 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 15A Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Type of semiconductor module: IGBT Power dissipation: 130W Technology: EasyPIM™ 1B Mechanical mounting: screw Pulsed collector current: 30A Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Semiconductor structure: diode/transistor Case: AG-EASY1B-1 Gate-emitter voltage: ±20V Collector current: 15A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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FP75R12KT4 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 75A Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Type of semiconductor module: IGBT Power dissipation: 385W Technology: EconoPIM™ 3 Mechanical mounting: screw Pulsed collector current: 150A Application: Inverter Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Semiconductor structure: diode/transistor Case: AG-ECONO3-3 Gate-emitter voltage: ±20V Collector current: 75A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BFP450H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar Type of transistor: NPN Polarisation: bipolar Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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BFP450H6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 0.17A; 0.5W; SOT343 Type of transistor: NPN Technology: SIEGET™ Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 4.5V Collector current: 0.17A Power dissipation: 0.5W Case: SOT343 Mounting: SMD Kind of package: reel; tape Frequency: 24GHz |
auf Bestellung 615 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BSS214NH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT23 Mounting: SMD Drain current: 1.5A Kind of channel: enhancement Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±12V Case: SOT23 On-state resistance: 0.25Ω Power dissipation: 0.5W Polarisation: unipolar Technology: OptiMOS™ 2 |
auf Bestellung 1367 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BSL211SPH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.7A; 2W; PG-TSOP-6 Type of transistor: P-MOSFET Technology: OptiMOS™ P Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.7A Power dissipation: 2W Case: PG-TSOP-6 Gate-source voltage: ±12V On-state resistance: 67mΩ Mounting: SMD Kind of channel: enhancement |
auf Bestellung 2829 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IKW25N120H3FKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 50A Power dissipation: 326W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 100A Mounting: THT Gate charge: 115nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Manufacturer series: H3 Technology: TRENCHSTOP™ 3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IHW25N120E1XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 25A; 92.4W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 25A Power dissipation: 92.4W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 75A Mounting: THT Gate charge: 147nC Kind of package: tube Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Technology: TRENCHSTOP™ RC Turn-off time: 2004ns |
auf Bestellung 17 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRLR3110ZTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 140W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 63A Power dissipation: 140W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 664 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IRLR3110ZTRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 250A; 140W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 45A Power dissipation: 140W Case: DPAK Mounting: SMD Kind of channel: enhancement Pulsed drain current: 250A On-state resistance: 14mΩ Gate-source voltage: ±16V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IRF7319TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.5/-4.9A; 2W; SO8 Type of transistor: N/P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 6.5/-4.9A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 29/58mΩ Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRL3103STRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 110W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 64A Power dissipation: 110W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRFH7084TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 40A Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRFS3206TRRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 210A; 300W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 210A Power dissipation: 300W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DZ1070N22K | INFINEON TECHNOLOGIES |
Category: Diode modules Description: Module: diode; single diode; 2.2kV; If: 1.07kA; BG-PB70AT-1; screw Max. forward impulse current: 41kA Max. forward voltage: 0.75V Type of semiconductor module: diode Mechanical mounting: screw Max. off-state voltage: 2.2kV Electrical mounting: screw Load current: 1.07kA Max. load current: 1.1kA Semiconductor structure: single diode Case: BG-PB70AT-1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| DZ1070N18K | INFINEON TECHNOLOGIES |
Category: Diode modules Description: Module: diode; single diode; 1.8kV; If: 1.07kA; BG-PB70AT-1; screw Max. forward impulse current: 41kA Max. forward voltage: 0.75V Type of semiconductor module: diode Mechanical mounting: screw Max. off-state voltage: 1.8kV Electrical mounting: screw Load current: 1.07kA Semiconductor structure: single diode Case: BG-PB70AT-1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| DZ1070N28K | INFINEON TECHNOLOGIES |
Category: Diode modules Description: Module: diode; single diode; 2.8kV; If: 1.07kA; BG-PB70AT-1; screw Max. forward impulse current: 41kA Max. forward voltage: 0.75V Type of semiconductor module: diode Mechanical mounting: screw Max. off-state voltage: 2.8kV Electrical mounting: screw Load current: 1.07kA Semiconductor structure: single diode Case: BG-PB70AT-1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| DZ1070N26K | INFINEON TECHNOLOGIES |
Category: Diode modules Description: Module: diode; single diode; 2.6kV; If: 1.07kA; BG-PB70AT-1; screw Max. forward impulse current: 41kA Max. forward voltage: 0.75V Type of semiconductor module: diode Mechanical mounting: screw Max. off-state voltage: 2.6kV Electrical mounting: screw Load current: 1.07kA Semiconductor structure: single diode Case: BG-PB70AT-1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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IRF2907ZPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 330W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 170A Power dissipation: 330W Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 59 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FM25L16B-GTR | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuits Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; SO8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 16kb FRAM Interface: SPI Memory organisation: 2kx8bit Supply voltage: 2.7...3.6V DC Clock frequency: 20MHz Case: SO8 Mounting: SMD Kind of interface: serial Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BSC160N10NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 60W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 42A Power dissipation: 60W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SMBT3904SH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.25W; SOT363 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.25W Case: SOT363 Mounting: SMD Frequency: 300MHz |
auf Bestellung 63 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH |
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CY8CMBR3102-SX1I | INFINEON TECHNOLOGIES |
Category: Interfaces others - integrated circuits Description: IC: PSoC microcontroller; 1.71÷5.5VDC; GPIO,I2C; SMD; SO8 Case: SO8 Mounting: SMD Interface: GPIO; I2C Supply voltage: 1.71...5.5V DC Type of integrated circuit: PSoC microcontroller Operating temperature: -40...85°C Integrated circuit features: watchdog |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| CY8CMBR3108-LQXI | INFINEON TECHNOLOGIES |
Category: Interfaces others - integrated circuits Description: IC: PSoC microcontroller; 1.71÷5.5VDC; GPIO,I2C; SMD; QFN16 Case: QFN16 Mounting: SMD Interface: GPIO; I2C Supply voltage: 1.71...5.5V DC Type of integrated circuit: PSoC microcontroller Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4900 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| CY8CMBR3108-LQXIT | INFINEON TECHNOLOGIES |
Category: Interfaces others - integrated circuits Description: IC: PSoC microcontroller; 1.71÷5.5VDC; GPIO,I2C; SMD; QFN16 Case: QFN16 Mounting: SMD Interface: GPIO; I2C Supply voltage: 1.71...5.5V DC Type of integrated circuit: PSoC microcontroller Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| CY8CMBR3106S-LQXI | INFINEON TECHNOLOGIES |
Category: Drivers - integrated circuits Description: CY8CMBR3106S-LQXI |
auf Bestellung 2450 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 490 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IRFR3410TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 31A; 110W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 31A Power dissipation: 110W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRFR3410TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 31A; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 31A Case: DPAK Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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ICE2QS02GXUMA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 20÷150kHz; Ch: 1; PG-DSO-8; flyback; SMPS Type of integrated circuit: PMIC Topology: flyback Kind of integrated circuit: PWM controller Case: PG-DSO-8 Number of channels: 1 Mounting: SMD Operating temperature: -25...125°C Application: SMPS Operating voltage: 11...25V DC Frequency: 20...150kHz Input voltage: 80...265V |
auf Bestellung 1781 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRLMS5703TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.3A; 1.7W; TSOP6 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.3A Power dissipation: 1.7W Case: TSOP6 Mounting: SMD Kind of channel: enhancement Features of semiconductor devices: logic level Kind of package: reel |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRLMS1503TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.2A; 1.7W; TSOP6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.2A Power dissipation: 1.7W Case: TSOP6 Mounting: SMD Kind of channel: enhancement Features of semiconductor devices: logic level Kind of package: reel |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BC850BE6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 250MHz |
auf Bestellung 3982 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BC850CE6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 250MHz |
auf Bestellung 48 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| BC850BWH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar Type of transistor: NPN Polarisation: bipolar Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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BC850CWH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 100mA; 250mW; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.25W Case: SOT323 Current gain: 420 Mounting: SMD Frequency: 250MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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PVT412APBF | INFINEON TECHNOLOGIES |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; 25mA; PV; 6Ω; THT; DIP6 Type of relay: solid state Contacts configuration: SPST-NO Control voltage: 1.2V DC Control current max.: 25mA On-state resistance: 6Ω Mounting: THT Case: DIP6 Body dimensions: 8.63x6.47x3.42mm Leads: for PCB Insulation voltage: 4kV Kind of output: MOSFET Operating temperature: -40...85°C Manufacturer series: PV |
auf Bestellung 3859 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH |
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PVT322PBF | INFINEON TECHNOLOGIES |
Category: One Phase Solid State Relays Description: Relay: solid state; DPST-NO; Ucntrl: 1.2VDC; Icntrl: 2÷25mA; 500mA Type of relay: solid state Contacts configuration: DPST-NO Control voltage: 1.2V DC Control current: 2...25mA Max. operating current: 0.5A Switched voltage: 0...250V AC; 0...250V DC Manufacturer series: PVT322PbF Relay variant: MOSFET On-state resistance: 10Ω Mounting: THT Case: DIP8 Operate time: 3ms Release time: 0.5ms Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IRFI540NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 42W; TO220FP Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 18A Power dissipation: 42W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 52mΩ Mounting: THT Gate charge: 62.7nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 633 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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S29AL008J70TFI020 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; TSSOP48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 8Mb FLASH Operating voltage: 2.7...3.6V Case: TSSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Interface: CFI; parallel |
auf Bestellung 502 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| XMC DIGITAL POWER EXPLORER KIT | INFINEON TECHNOLOGIES |
Category: Development kits - others Description: Dev.kit: ARM Infineon; XMC1300,XMC4200; Add-on connectors: 1 Components: BSC0924ND; IRS2011S; XMC1300; XMC4200 Kind of architecture: Cortex M4; Cortex M0 Number of add-on connectors: 1 Kit contents: base board with buck converter; board with XMC1300 microcontroller; board with XMC4200 microcontroller Connection: pin strips; USB B micro Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USB; USIC x2 Family: XMC1300; XMC4200 Type of development kit: ARM Infineon |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IPD70R360P7SAUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 59.5W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 59.5W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2495 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFP90N20DPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 94A; 580W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 94A
Power dissipation: 580W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 94A; 580W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 94A
Power dissipation: 580W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 292 Stücke:
Lieferzeit 14-21 Tag (e)
| CY7C65632-48AXC |
|
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: HUB controller; GPIO,I2C,SPI,USB 2.0; 3.15÷3.45VDC; TQFP48
Type of integrated circuit: HUB controller
Case: TQFP48
Mounting: SMD
Interface: GPIO; I2C; SPI; USB 2.0
Supply voltage: 3.15...3.45V DC
Operating temperature: 0...70°C
Integrated circuit features: USB HUB
Kind of core: 8-bit
Category: USB interfaces - integrated circuits
Description: IC: HUB controller; GPIO,I2C,SPI,USB 2.0; 3.15÷3.45VDC; TQFP48
Type of integrated circuit: HUB controller
Case: TQFP48
Mounting: SMD
Interface: GPIO; I2C; SPI; USB 2.0
Supply voltage: 3.15...3.45V DC
Operating temperature: 0...70°C
Integrated circuit features: USB HUB
Kind of core: 8-bit
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY7C65632-28LTXC |
|
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: HUB controller; GPIO,I2C,SPI,USB 2.0; 3.15÷3.45VDC; QFN28
Type of integrated circuit: HUB controller
Interface: GPIO; I2C; SPI; USB 2.0
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.45V DC
Case: QFN28
Integrated circuit features: USB HUB
Kind of core: 8-bit
Category: USB interfaces - integrated circuits
Description: IC: HUB controller; GPIO,I2C,SPI,USB 2.0; 3.15÷3.45VDC; QFN28
Type of integrated circuit: HUB controller
Interface: GPIO; I2C; SPI; USB 2.0
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.45V DC
Case: QFN28
Integrated circuit features: USB HUB
Kind of core: 8-bit
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY7C65632-28LTXCT |
|
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: HUB controller; GPIO,I2C,SPI,USB 2.0; 3.15÷3.45VDC; QFN28
Type of integrated circuit: HUB controller
Interface: GPIO; I2C; SPI; USB 2.0
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.45V DC
Case: QFN28
Integrated circuit features: USB HUB
Kind of core: 8-bit
Category: USB interfaces - integrated circuits
Description: IC: HUB controller; GPIO,I2C,SPI,USB 2.0; 3.15÷3.45VDC; QFN28
Type of integrated circuit: HUB controller
Interface: GPIO; I2C; SPI; USB 2.0
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.45V DC
Case: QFN28
Integrated circuit features: USB HUB
Kind of core: 8-bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY7C65642-48AXC |
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: HUB controller; GPIO,I2C,SPI,USB 2.0; 3.15÷3.45VDC; TQFP48
Type of integrated circuit: HUB controller
Interface: GPIO; I2C; SPI; USB 2.0
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.45V DC
Case: TQFP48
Integrated circuit features: USB HUB
Kind of core: 8-bit
Category: USB interfaces - integrated circuits
Description: IC: HUB controller; GPIO,I2C,SPI,USB 2.0; 3.15÷3.45VDC; TQFP48
Type of integrated circuit: HUB controller
Interface: GPIO; I2C; SPI; USB 2.0
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.45V DC
Case: TQFP48
Integrated circuit features: USB HUB
Kind of core: 8-bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 250 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY7C65642-48AXCT |
|
Hersteller: INFINEON TECHNOLOGIES
Category: USB interfaces - integrated circuits
Description: IC: HUB controller; GPIO,I2C,SPI,USB 2.0; 3.15÷3.45VDC; TQFP48
Type of integrated circuit: HUB controller
Interface: GPIO; I2C; SPI; USB 2.0
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.45V DC
Case: TQFP48
Integrated circuit features: USB HUB
Kind of core: 8-bit
Category: USB interfaces - integrated circuits
Description: IC: HUB controller; GPIO,I2C,SPI,USB 2.0; 3.15÷3.45VDC; TQFP48
Type of integrated circuit: HUB controller
Interface: GPIO; I2C; SPI; USB 2.0
Mounting: SMD
Operating temperature: 0...70°C
Supply voltage: 3.15...3.45V DC
Case: TQFP48
Integrated circuit features: USB HUB
Kind of core: 8-bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IR2011SPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 80ns
Turn-off time: 60ns
Output current: -1...1A
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 80ns
Turn-off time: 60ns
Output current: -1...1A
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
| IR2010PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -3...3A
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 95ns
Turn-off time: 65ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -3...3A
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 95ns
Turn-off time: 65ns
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
| IR2011PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -1...1A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 80ns
Turn-off time: 60ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -1...1A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 80ns
Turn-off time: 60ns
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
| BCR166E6327 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Mounting: SMD
Case: SOT23
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 4.7kΩ
Frequency: 160MHz
Polarisation: bipolar
Kind of transistor: BRT
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Mounting: SMD
Case: SOT23
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 4.7kΩ
Frequency: 160MHz
Polarisation: bipolar
Kind of transistor: BRT
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
| BCR162E6327 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Base-emitter resistor: 4.7kΩ
Case: SOT23
Frequency: 200MHz
Collector current: 0.1A
Mounting: SMD
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Base-emitter resistor: 4.7kΩ
Case: SOT23
Frequency: 200MHz
Collector current: 0.1A
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSC123N08NS3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 66W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Power dissipation: 66W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 55A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 12.3mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 66W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Power dissipation: 66W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 55A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 12.3mΩ
auf Bestellung 4920 Stücke:
Lieferzeit 14-21 Tag (e)
| BTS50080-1TEA |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Case: PG-TO252-5-11
Mounting: SMD
Supply voltage: 5.5...30V DC
Output current: 10A
Kind of output: N-Channel
Technology: High Current PROFET
Output voltage: 39V
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 16mΩ
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Case: PG-TO252-5-11
Mounting: SMD
Supply voltage: 5.5...30V DC
Output current: 10A
Kind of output: N-Channel
Technology: High Current PROFET
Output voltage: 39V
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 16mΩ
auf Bestellung 1610 Stücke:
Lieferzeit 14-21 Tag (e)
| BTS50080-1TMA |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.5A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Case: PG-TO220-7-4
Mounting: SMD
Supply voltage: 5.5...38V DC
Output current: 9.5A
Kind of output: N-Channel
Technology: High Current PROFET
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 7mΩ
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.5A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Case: PG-TO220-7-4
Mounting: SMD
Supply voltage: 5.5...38V DC
Output current: 9.5A
Kind of output: N-Channel
Technology: High Current PROFET
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 7mΩ
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
| IPP045N10N3GXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO220-3
Mounting: THT
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
On-state resistance: 4.5mΩ
Power dissipation: 214W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO220-3
Mounting: THT
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
On-state resistance: 4.5mΩ
Power dissipation: 214W
auf Bestellung 461 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF7805ZTRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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Stück im Wert von UAH
| IRF3205ZPBFXKMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 78A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 78A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 78A; 170W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 78A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRLR3410TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Mounting: SMD
Kind of package: reel
Power dissipation: 52W
Polarisation: unipolar
Technology: HEXFET®
Features of semiconductor devices: logic level
Drain current: 15A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Case: DPAK
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Mounting: SMD
Kind of package: reel
Power dissipation: 52W
Polarisation: unipolar
Technology: HEXFET®
Features of semiconductor devices: logic level
Drain current: 15A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Case: DPAK
auf Bestellung 1624 Stücke:
Lieferzeit 14-21 Tag (e)
| IRLR7843TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 161A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 161A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 161A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 161A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1261 Stücke:
Lieferzeit 14-21 Tag (e)
| FP15R12W1T4_B3 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 15A
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Power dissipation: 130W
Technology: EasyPIM™ 1B
Mechanical mounting: screw
Pulsed collector current: 30A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Case: AG-EASY1B-1
Gate-emitter voltage: ±20V
Collector current: 15A
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 15A
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Power dissipation: 130W
Technology: EasyPIM™ 1B
Mechanical mounting: screw
Pulsed collector current: 30A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Case: AG-EASY1B-1
Gate-emitter voltage: ±20V
Collector current: 15A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FP75R12KT4 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 75A
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Power dissipation: 385W
Technology: EconoPIM™ 3
Mechanical mounting: screw
Pulsed collector current: 150A
Application: Inverter
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Case: AG-ECONO3-3
Gate-emitter voltage: ±20V
Collector current: 75A
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 75A
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Power dissipation: 385W
Technology: EconoPIM™ 3
Mechanical mounting: screw
Pulsed collector current: 150A
Application: Inverter
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Case: AG-ECONO3-3
Gate-emitter voltage: ±20V
Collector current: 75A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BFP450H6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar
Type of transistor: NPN
Polarisation: bipolar
Mounting: SMD
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar
Type of transistor: NPN
Polarisation: bipolar
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BFP450H6327 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 0.17A; 0.5W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.5V
Collector current: 0.17A
Power dissipation: 0.5W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 24GHz
Category: NPN SMD transistors
Description: Transistor: NPN; SIEGET™; bipolar; RF; 4.5V; 0.17A; 0.5W; SOT343
Type of transistor: NPN
Technology: SIEGET™
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.5V
Collector current: 0.17A
Power dissipation: 0.5W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 24GHz
auf Bestellung 615 Stücke:
Lieferzeit 14-21 Tag (e)
| BSS214NH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT23
Mounting: SMD
Drain current: 1.5A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Case: SOT23
On-state resistance: 0.25Ω
Power dissipation: 0.5W
Polarisation: unipolar
Technology: OptiMOS™ 2
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; 0.5W; SOT23
Mounting: SMD
Drain current: 1.5A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Case: SOT23
On-state resistance: 0.25Ω
Power dissipation: 0.5W
Polarisation: unipolar
Technology: OptiMOS™ 2
auf Bestellung 1367 Stücke:
Lieferzeit 14-21 Tag (e)
| BSL211SPH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.7A; 2W; PG-TSOP-6
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.7A
Power dissipation: 2W
Case: PG-TSOP-6
Gate-source voltage: ±12V
On-state resistance: 67mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.7A; 2W; PG-TSOP-6
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.7A
Power dissipation: 2W
Case: PG-TSOP-6
Gate-source voltage: ±12V
On-state resistance: 67mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2829 Stücke:
Lieferzeit 14-21 Tag (e)
| IKW25N120H3FKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 326W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H3
Technology: TRENCHSTOP™ 3
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 326W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H3
Technology: TRENCHSTOP™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IHW25N120E1XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 25A; 92.4W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 92.4W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ RC
Turn-off time: 2004ns
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 25A; 92.4W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 92.4W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ RC
Turn-off time: 2004ns
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
| IRLR3110ZTRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 664 Stücke:
Lieferzeit 14-21 Tag (e)
| IRLR3110ZTRLPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 250A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 250A
On-state resistance: 14mΩ
Gate-source voltage: ±16V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 250A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 250A
On-state resistance: 14mΩ
Gate-source voltage: ±16V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRF7319TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.5/-4.9A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6.5/-4.9A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 29/58mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.5/-4.9A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6.5/-4.9A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 29/58mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRL3103STRLPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 64A
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 64A
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRFH7084TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRFS3206TRRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 210A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 210A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DZ1070N22K |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 2.2kV; If: 1.07kA; BG-PB70AT-1; screw
Max. forward impulse current: 41kA
Max. forward voltage: 0.75V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 1.07kA
Max. load current: 1.1kA
Semiconductor structure: single diode
Case: BG-PB70AT-1
Category: Diode modules
Description: Module: diode; single diode; 2.2kV; If: 1.07kA; BG-PB70AT-1; screw
Max. forward impulse current: 41kA
Max. forward voltage: 0.75V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 1.07kA
Max. load current: 1.1kA
Semiconductor structure: single diode
Case: BG-PB70AT-1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DZ1070N18K |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 1.8kV; If: 1.07kA; BG-PB70AT-1; screw
Max. forward impulse current: 41kA
Max. forward voltage: 0.75V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 1.8kV
Electrical mounting: screw
Load current: 1.07kA
Semiconductor structure: single diode
Case: BG-PB70AT-1
Category: Diode modules
Description: Module: diode; single diode; 1.8kV; If: 1.07kA; BG-PB70AT-1; screw
Max. forward impulse current: 41kA
Max. forward voltage: 0.75V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 1.8kV
Electrical mounting: screw
Load current: 1.07kA
Semiconductor structure: single diode
Case: BG-PB70AT-1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DZ1070N28K |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 2.8kV; If: 1.07kA; BG-PB70AT-1; screw
Max. forward impulse current: 41kA
Max. forward voltage: 0.75V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 2.8kV
Electrical mounting: screw
Load current: 1.07kA
Semiconductor structure: single diode
Case: BG-PB70AT-1
Category: Diode modules
Description: Module: diode; single diode; 2.8kV; If: 1.07kA; BG-PB70AT-1; screw
Max. forward impulse current: 41kA
Max. forward voltage: 0.75V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 2.8kV
Electrical mounting: screw
Load current: 1.07kA
Semiconductor structure: single diode
Case: BG-PB70AT-1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DZ1070N26K |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 2.6kV; If: 1.07kA; BG-PB70AT-1; screw
Max. forward impulse current: 41kA
Max. forward voltage: 0.75V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 2.6kV
Electrical mounting: screw
Load current: 1.07kA
Semiconductor structure: single diode
Case: BG-PB70AT-1
Category: Diode modules
Description: Module: diode; single diode; 2.6kV; If: 1.07kA; BG-PB70AT-1; screw
Max. forward impulse current: 41kA
Max. forward voltage: 0.75V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 2.6kV
Electrical mounting: screw
Load current: 1.07kA
Semiconductor structure: single diode
Case: BG-PB70AT-1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF2907ZPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 330W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 330W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 59 Stücke:
Lieferzeit 14-21 Tag (e)
| FM25L16B-GTR |
|
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: SPI
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.6V DC
Clock frequency: 20MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: SPI
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.6V DC
Clock frequency: 20MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSC160N10NS3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 60W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Power dissipation: 60W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 60W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Power dissipation: 60W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SMBT3904SH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.25W; SOT363
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.25W; SOT363
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 300MHz
auf Bestellung 63 Stücke:
Lieferzeit 14-21 Tag (e)
| CY8CMBR3102-SX1I |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: PSoC microcontroller; 1.71÷5.5VDC; GPIO,I2C; SMD; SO8
Case: SO8
Mounting: SMD
Interface: GPIO; I2C
Supply voltage: 1.71...5.5V DC
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Category: Interfaces others - integrated circuits
Description: IC: PSoC microcontroller; 1.71÷5.5VDC; GPIO,I2C; SMD; SO8
Case: SO8
Mounting: SMD
Interface: GPIO; I2C
Supply voltage: 1.71...5.5V DC
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Produkt ist nicht verfügbar
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| CY8CMBR3108-LQXI |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: PSoC microcontroller; 1.71÷5.5VDC; GPIO,I2C; SMD; QFN16
Case: QFN16
Mounting: SMD
Interface: GPIO; I2C
Supply voltage: 1.71...5.5V DC
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Category: Interfaces others - integrated circuits
Description: IC: PSoC microcontroller; 1.71÷5.5VDC; GPIO,I2C; SMD; QFN16
Case: QFN16
Mounting: SMD
Interface: GPIO; I2C
Supply voltage: 1.71...5.5V DC
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 4900 Stücke
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| CY8CMBR3108-LQXIT |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: PSoC microcontroller; 1.71÷5.5VDC; GPIO,I2C; SMD; QFN16
Case: QFN16
Mounting: SMD
Interface: GPIO; I2C
Supply voltage: 1.71...5.5V DC
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Category: Interfaces others - integrated circuits
Description: IC: PSoC microcontroller; 1.71÷5.5VDC; GPIO,I2C; SMD; QFN16
Case: QFN16
Mounting: SMD
Interface: GPIO; I2C
Supply voltage: 1.71...5.5V DC
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| CY8CMBR3106S-LQXI |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Drivers - integrated circuits
Description: CY8CMBR3106S-LQXI
Category: Drivers - integrated circuits
Description: CY8CMBR3106S-LQXI
auf Bestellung 2450 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFR3410TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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Stück im Wert von UAH
| IRFR3410TRLPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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| ICE2QS02GXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 20÷150kHz; Ch: 1; PG-DSO-8; flyback; SMPS
Type of integrated circuit: PMIC
Topology: flyback
Kind of integrated circuit: PWM controller
Case: PG-DSO-8
Number of channels: 1
Mounting: SMD
Operating temperature: -25...125°C
Application: SMPS
Operating voltage: 11...25V DC
Frequency: 20...150kHz
Input voltage: 80...265V
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 20÷150kHz; Ch: 1; PG-DSO-8; flyback; SMPS
Type of integrated circuit: PMIC
Topology: flyback
Kind of integrated circuit: PWM controller
Case: PG-DSO-8
Number of channels: 1
Mounting: SMD
Operating temperature: -25...125°C
Application: SMPS
Operating voltage: 11...25V DC
Frequency: 20...150kHz
Input voltage: 80...265V
auf Bestellung 1781 Stücke:
Lieferzeit 14-21 Tag (e)
| IRLMS5703TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.3A; 1.7W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.3A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Kind of package: reel
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.3A; 1.7W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.3A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Kind of package: reel
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| IRLMS1503TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.2A; 1.7W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.2A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Kind of package: reel
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.2A; 1.7W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.2A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Kind of package: reel
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| BC850BE6327 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 3982 Stücke:
Lieferzeit 14-21 Tag (e)
| BC850CE6327 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
| BC850BWH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar
Type of transistor: NPN
Polarisation: bipolar
Mounting: SMD
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar
Type of transistor: NPN
Polarisation: bipolar
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| BC850CWH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 250mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Current gain: 420
Mounting: SMD
Frequency: 250MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 250mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Current gain: 420
Mounting: SMD
Frequency: 250MHz
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| PVT412APBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; 25mA; PV; 6Ω; THT; DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
On-state resistance: 6Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.63x6.47x3.42mm
Leads: for PCB
Insulation voltage: 4kV
Kind of output: MOSFET
Operating temperature: -40...85°C
Manufacturer series: PV
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; 25mA; PV; 6Ω; THT; DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
On-state resistance: 6Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.63x6.47x3.42mm
Leads: for PCB
Insulation voltage: 4kV
Kind of output: MOSFET
Operating temperature: -40...85°C
Manufacturer series: PV
auf Bestellung 3859 Stücke:
Lieferzeit 14-21 Tag (e)
| PVT322PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Ucntrl: 1.2VDC; Icntrl: 2÷25mA; 500mA
Type of relay: solid state
Contacts configuration: DPST-NO
Control voltage: 1.2V DC
Control current: 2...25mA
Max. operating current: 0.5A
Switched voltage: 0...250V AC; 0...250V DC
Manufacturer series: PVT322PbF
Relay variant: MOSFET
On-state resistance: 10Ω
Mounting: THT
Case: DIP8
Operate time: 3ms
Release time: 0.5ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Ucntrl: 1.2VDC; Icntrl: 2÷25mA; 500mA
Type of relay: solid state
Contacts configuration: DPST-NO
Control voltage: 1.2V DC
Control current: 2...25mA
Max. operating current: 0.5A
Switched voltage: 0...250V AC; 0...250V DC
Manufacturer series: PVT322PbF
Relay variant: MOSFET
On-state resistance: 10Ω
Mounting: THT
Case: DIP8
Operate time: 3ms
Release time: 0.5ms
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IRFI540NPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 42W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Power dissipation: 42W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 62.7nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 42W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Power dissipation: 42W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 62.7nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 633 Stücke:
Lieferzeit 14-21 Tag (e)
| S29AL008J70TFI020 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; TSSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 8Mb FLASH
Operating voltage: 2.7...3.6V
Case: TSSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Interface: CFI; parallel
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; TSSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 8Mb FLASH
Operating voltage: 2.7...3.6V
Case: TSSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Interface: CFI; parallel
auf Bestellung 502 Stücke:
Lieferzeit 14-21 Tag (e)
| XMC DIGITAL POWER EXPLORER KIT |
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC1300,XMC4200; Add-on connectors: 1
Components: BSC0924ND; IRS2011S; XMC1300; XMC4200
Kind of architecture: Cortex M4; Cortex M0
Number of add-on connectors: 1
Kit contents: base board with buck converter; board with XMC1300 microcontroller; board with XMC4200 microcontroller
Connection: pin strips; USB B micro
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USB; USIC x2
Family: XMC1300; XMC4200
Type of development kit: ARM Infineon
Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC1300,XMC4200; Add-on connectors: 1
Components: BSC0924ND; IRS2011S; XMC1300; XMC4200
Kind of architecture: Cortex M4; Cortex M0
Number of add-on connectors: 1
Kit contents: base board with buck converter; board with XMC1300 microcontroller; board with XMC4200 microcontroller
Connection: pin strips; USB B micro
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USB; USIC x2
Family: XMC1300; XMC4200
Type of development kit: ARM Infineon
Produkt ist nicht verfügbar
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