Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (128360) > Seite 2076 nach 2140
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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ICE3RBR4765JZXKLA1 | INFINEON TECHNOLOGIES |
 Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller; 65kHz; Ch: 1; DIP7; flyback; Uin: 85÷265V Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Frequency: 65kHz Number of channels: 1 Case: DIP7 Mounting: THT Operating temperature: -40...130°C Topology: flyback Input voltage: 85...265V Breakdown voltage: 650V Duty cycle factor: 0...75% Power: 26/18W Application: SMPS Operating voltage: 10.5...25V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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ICE3B1565JFKLA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; DIP8; flyback; 85÷265VAC; 650V; 42W Type of integrated circuit: PMIC Case: DIP8 Mounting: THT Operating temperature: -25...130°C Topology: flyback Input voltage: 85...265V AC Breakdown voltage: 650V Power: 42W |
auf Bestellung 1300 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 1300 Stücke Im Einkaufswagen Stück im Wert von UAH |
| GS66502BMRXUSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 6.3A; Idm: 15A; GaNPX Technology: GaN Case: GaNPX Mounting: SMD Kind of package: tape On-state resistance: 516mΩ Pulsed drain current: 15A Gate charge: 1.6nC Polarisation: unipolar Drain current: 6.3A Kind of channel: enhancement Drain-source voltage: 650V Kind of transistor: HEMT Type of transistor: N-JFET Gate-source voltage: -10...7V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| GS0650306LLMRXUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-JFET; GaN; unipolar; HEMT; 700V; 20A; Idm: 67A; TOLL Technology: GaN Case: TOLL Mounting: SMD Kind of package: tape On-state resistance: 0.1Ω Pulsed drain current: 67A Gate charge: 6.7nC Polarisation: unipolar Drain current: 20A Kind of channel: enhancement Drain-source voltage: 700V Kind of transistor: HEMT Type of transistor: N-JFET Gate-source voltage: -10...7V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IGOT60R070D1AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A Type of transistor: N-JFET Power dissipation: 125W Case: PG-DSO-20 Mounting: SMD Gate charge: 5.8nC Kind of package: tape Kind of channel: enhancement Drain-source voltage: 600V Kind of transistor: HEMT Gate-source voltage: -10V On-state resistance: 70mΩ Gate current: 20mA Pulsed drain current: 60A Polarisation: unipolar Technology: CoolGaN™ Drain current: 31A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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FM25L16B-DG | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuits Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; DFN8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 16kb FRAM Interface: SPI Memory organisation: 2kx8bit Case: DFN8 Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2.7...3.6V DC Clock frequency: 20MHz |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 81 Stücke Im Einkaufswagen Stück im Wert von UAH |
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FM25L16B-DGTR | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuits Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; DFN8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 16kb FRAM Interface: SPI Memory organisation: 2kx8bit Case: DFN8 Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2.7...3.6V DC Clock frequency: 20MHz Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IR2125PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,gate driver; DIP8; -2÷1A Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: gate driver; high-side Case: DIP8 Output current: -2...1A Power: 1W Number of channels: 1 Supply voltage: 12...18V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 500V Turn-on time: 150ns Turn-off time: 150ns |
auf Bestellung 133 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IR2121PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; high-/low-side,gate driver; DIP8; -2÷1A; 1W; Ch: 1; 5V Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Case: DIP8 Output current: -2...1A Number of channels: 1 Supply voltage: 12...18V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 5V Turn-on time: 150ns Power: 1W Turn-off time: 105ns |
auf Bestellung 109 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IR2125SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,gate driver; SO16; -2÷1A Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: gate driver; high-side Case: SO16 Output current: -2...1A Power: 1.25W Number of channels: 1 Supply voltage: 12...18V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 500V Turn-on time: 150ns Turn-off time: 150ns |
auf Bestellung 939 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IR2128STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver Type of integrated circuit: driver Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IPB160N04S4H1ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 167W; TO263-7 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 160A Power dissipation: 167W Case: TO263-7 On-state resistance: 1.4mΩ Mounting: SMD Gate charge: 137nC Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IPB160N04S4LH1ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 160A; Idm: 640A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 160A Power dissipation: 167W Case: PG-TO263-7-3 On-state resistance: 1.5mΩ Mounting: SMD Kind of channel: enhancement Pulsed drain current: 640A Technology: OptiMOS™ T2 Gate-source voltage: -16...20V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IRS2304SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -600...290mA Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 220ns Power: 625mW Turn-off time: 185ns |
auf Bestellung 62 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BTS4141N | INFINEON TECHNOLOGIES |
 Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.7A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: PG-SOT223-4 On-state resistance: 0.175Ω Technology: Classic PROFET Output voltage: 12...45V |
auf Bestellung 2376 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BTS4880R | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 0.625A; Ch: 1; N-Channel; SMD; BSSOP36 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.625A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: BSSOP36 On-state resistance: 0.15Ω Supply voltage: 11...45V DC Technology: Classic PROFET |
auf Bestellung 750 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BTS452T | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1.8A; Ch: 1; N-Channel; SMD; TO252-5 Kind of output: N-Channel Technology: Classic PROFET Case: TO252-5 Kind of integrated circuit: high-side Number of channels: 1 On-state resistance: 0.15Ω Mounting: SMD Supply voltage: 6...52V DC Output current: 1.8A Type of integrated circuit: power switch |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BTS4175SGA | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8 Case: SO8 On-state resistance: 0.175Ω Mounting: SMD Type of integrated circuit: power switch Number of channels: 1 Output current: 1.3A Supply voltage: 6...52V DC Technology: Classic PROFET Kind of integrated circuit: high-side Kind of output: N-Channel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BTS436L2GATMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 9.8A; Ch: 1; N-Channel; SMD; D2PAK; 75W Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 9.8A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: D2PAK On-state resistance: 35mΩ Supply voltage: 4.7...41V DC Technology: SIPMOS™ Operating temperature: -40...150°C Power dissipation: 75W Integrated circuit features: thermal protection Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SPD06N80C3ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3.8A; Idm: 18A; 83W Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.8A Power dissipation: 83W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.9Ω Mounting: SMD Kind of channel: enhancement Pulsed drain current: 18A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IRFR1205TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 37A; 107W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 37A Power dissipation: 107W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
auf Bestellung 2147 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| BGS14MPA9E6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Analog multiplexers and switches Description: IC: RF switch; SP4T; Ch: 4; MIPI; ATSLP-9-3; 1.65÷1.95VDC; 0.05÷6GHz Type of integrated circuit: RF switch Output configuration: SP4T Number of channels: 4 Case: ATSLP-9-3 Supply voltage: 1.65...1.95V DC Mounting: SMD Bandwidth: 0.05...6GHz Application: telecommunication Interface: MIPI |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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IRS21867STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -4...4A Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 192ns Turn-off time: 188ns |
auf Bestellung 1238 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRS2186STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -4...4A Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 192ns Turn-off time: 188ns |
auf Bestellung 1272 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRS2110SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO16 Output current: -2...2A Power: 1.25W Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 500V Turn-on time: 155ns Turn-off time: 137ns |
auf Bestellung 57 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRS21864SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO14 Output current: -4...4A Power: 1W Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 192ns Turn-off time: 188ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IRS2118PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: gate driver; high-side Case: DIP8 Output current: -600...290mA Power: 1W Number of channels: 1 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 0.2µs Turn-off time: 140ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRS2181STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,low-side; SOIC8; 1.9A; Ch: 2; MOSFET; 10÷20V Type of integrated circuit: driver Kind of integrated circuit: high-side; low-side Case: SOIC8 Output current: 1.9A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Input voltage: 10...20V Integrated circuit features: MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IRS2109STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver Type of integrated circuit: driver Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| IRS21864STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver Type of integrated circuit: driver Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IRS21814STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14 Supply voltage: 10...20V DC Operating temperature: -40...125°C Type of integrated circuit: driver Voltage class: 600V Turn-on time: 220ns Power: 1W Kind of package: reel; tape Case: SO14 Turn-off time: 240ns Kind of integrated circuit: gate driver; high-/low-side Number of channels: 2 Topology: MOSFET half-bridge Mounting: SMD Output current: -2.3...1.9A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IRS2101STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver Type of integrated circuit: driver Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IRS21271STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; current sensor,high-side; SO8; -600÷290mA; 625mW; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: current sensor; high-side Case: SO8 Output current: -600...290mA Power: 625mW Number of channels: 1 Supply voltage: 9...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 0.2µs Turn-off time: 190ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRS2183STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,low-side; SOIC8; 1.9A; Ch: 2; MOSFET Type of integrated circuit: driver Kind of integrated circuit: high-side; low-side Case: SOIC8 Output current: 1.9A Number of channels: 2 Supply voltage: 10...20V Mounting: SMD Operating temperature: -40...125°C Input voltage: 10...20V Integrated circuit features: MOSFET |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IRF7205TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -4.6A; 2.5W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.6A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of channel: enhancement Technology: HEXFET® Kind of package: reel |
auf Bestellung 1715 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRF7105TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 25/-25V; 3.5/-2.3A; 2W; SO8 Type of transistor: N/P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 25/-25V Drain current: 3.5/-2.3A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.1/0.25Ω Mounting: SMD Kind of package: reel Kind of channel: enhancement |
auf Bestellung 1599 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRF7101TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.5A; 2W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.5A Power dissipation: 2W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRF7104TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.3A; 2W; SO8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.3A Power dissipation: 2W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BC858CE6327 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.33W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 250MHz |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IR2109STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -250...120mA Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 750ns Turn-off time: 200ns |
auf Bestellung 3414 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IR21094STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO14 Output current: -250...120mA Power: 1W Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 750ns Turn-off time: 200ns |
auf Bestellung 1049 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IR21094SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO14 Output current: -250...120mA Power: 1W Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 750ns Turn-off time: 200ns |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IR21084STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,low-side; SOIC14; 350mA; Ch: 2; MOSFET; 10÷20V Type of integrated circuit: driver Kind of integrated circuit: high-side; low-side Case: SOIC14 Output current: 0.35A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Input voltage: 10...20V Integrated circuit features: MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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CY8C4245AXI-483 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: PSoC microcontroller; 48MHz; TQFP44; 4kBSRAM,32kBFLASH Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART Clock frequency: 48MHz Integrated circuit features: CapSense; LCD controller Kind of core: 32-bit Memory: 4kB SRAM; 32kB FLASH Case: TQFP44 Mounting: SMD Supply voltage: 1.71...5.5V DC Number of inputs/outputs: 36 Type of integrated circuit: PSoC microcontroller Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1600 Stücke Im Einkaufswagen Stück im Wert von UAH |
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CY8C4125AXI-483 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,32kBFLASH Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART Clock frequency: 24MHz Integrated circuit features: CapSense; LCD controller Kind of core: 32-bit Memory: 4kB SRAM; 32kB FLASH Case: TQFP44 Mounting: SMD Supply voltage: 1.71...5.5V DC Number of inputs/outputs: 36 Type of integrated circuit: PSoC microcontroller Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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CY8C27543-24AXI | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: PSoC microcontroller; 24MHz; TQFP44; 256BSRAM,16kBFLASH Type of integrated circuit: PSoC microcontroller Clock frequency: 24MHz Case: TQFP44 Memory: 256B SRAM; 16kB FLASH Number of inputs/outputs: 40 Mounting: SMD Supply voltage: 3...5.25V DC Interface: I2C; SPI; UART Kind of core: 8-bit |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 160 Stücke Im Einkaufswagen Stück im Wert von UAH |
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CY8C4124AXI-443 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,16kBFLASH Type of integrated circuit: PSoC microcontroller Mounting: SMD Case: TQFP44 Number of inputs/outputs: 36 Supply voltage: 1.71...5.5V DC Memory: 4kB SRAM; 16kB FLASH Clock frequency: 24MHz Kind of core: 32-bit Integrated circuit features: CapSense; LCD controller Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 160 Stücke Im Einkaufswagen Stück im Wert von UAH |
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CY8C4125AXI-473 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,32kBFLASH Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART Clock frequency: 24MHz Integrated circuit features: CapSense; LCD controller Kind of core: 32-bit Memory: 4kB SRAM; 32kB FLASH Case: TQFP44 Mounting: SMD Supply voltage: 1.71...5.5V DC Number of inputs/outputs: 36 Type of integrated circuit: PSoC microcontroller Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 320 Stücke Im Einkaufswagen Stück im Wert von UAH |
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CY8C4125AXQ-483 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,32kBFLASH Type of integrated circuit: PSoC microcontroller Mounting: SMD Case: TQFP44 Number of inputs/outputs: 36 Supply voltage: 1.71...5.5V DC Memory: 4kB SRAM; 32kB FLASH Clock frequency: 24MHz Kind of core: 32-bit Integrated circuit features: CapSense; LCD controller Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 320 Stücke Im Einkaufswagen Stück im Wert von UAH |
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CY8C4245AXI-473 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: PSoC microcontroller; 48MHz; TQFP44; 4kBSRAM,32kBFLASH Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART Clock frequency: 48MHz Integrated circuit features: CapSense; LCD controller Kind of core: 32-bit Memory: 4kB SRAM; 32kB FLASH Case: TQFP44 Mounting: SMD Supply voltage: 1.71...5.5V DC Number of inputs/outputs: 36 Type of integrated circuit: PSoC microcontroller Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1600 Stücke Im Einkaufswagen Stück im Wert von UAH |
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CY8C4245AZI-M443 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: PSoC microcontroller; 48MHz; TQFP44; 4kBSRAM,32kBFLASH Type of integrated circuit: PSoC microcontroller Mounting: SMD Case: TQFP44 Number of inputs/outputs: 38 Supply voltage: 1.71...5.5V DC Memory: 4kB SRAM; 32kB FLASH Clock frequency: 48MHz Kind of core: 32-bit Integrated circuit features: CapSense; LCD controller Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRF4104PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Power dissipation: 140W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: THT Gate charge: 68nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 143 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IPP041N04NGXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 94W; PG-TO220-3 Power dissipation: 94W Polarisation: unipolar Technology: OptiMOS™ 3 Drain current: 80A Kind of channel: enhancement Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: PG-TO220-3 On-state resistance: 4.1mΩ Mounting: THT |
auf Bestellung 156 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IRF40H233XTMA1 | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; StrongIRFET™; unipolar; 40V; 32A; 50W Type of transistor: N-MOSFET x2 Technology: StrongIRFET™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 32A Pulsed drain current: 140A Power dissipation: 50W Case: PQFN5X6 Gate-source voltage: ±20V On-state resistance: 6.2mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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AUIRF4104STRL | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Power dissipation: 140W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 68nC Kind of package: reel |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BAS3007ARPPE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; 30V; If: 0.9A; Ifsm: 5A; SOT143; SMT Case: SOT143 Kind of package: reel; tape Type of bridge rectifier: single-phase Max. forward impulse current: 5A Features of semiconductor devices: Schottky Max. off-state voltage: 30V Electrical mounting: SMT Load current: 0.9A |
auf Bestellung 1589 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BAS3005B02VH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SC79; SMD; 30V; 0.5A Type of diode: Schottky switching Case: SC79 Mounting: SMD Max. off-state voltage: 30V Load current: 0.5A Semiconductor structure: single diode Max. forward voltage: 0.62V Max. forward impulse current: 5A |
auf Bestellung 695 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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S29AL008J70TFI010 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; TSSOP48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 8Mb FLASH Operating voltage: 2.7...3.6V Case: TSSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Interface: CFI; parallel |
auf Bestellung 843 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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TT215N22KOF | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 2.2kV; 215A; BG-PB50-1; Ifsm: 7kA Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 215A Case: BG-PB50-1 Max. forward voltage: 1.8V Max. forward impulse current: 7kA Gate current: 200mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| TLE8366EVXUMA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC Type of integrated circuit: PMIC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| ICE3RBR4765JZXKLA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 65kHz; Ch: 1; DIP7; flyback; Uin: 85÷265V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 65kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...130°C
Topology: flyback
Input voltage: 85...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Power: 26/18W
Application: SMPS
Operating voltage: 10.5...25V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 65kHz; Ch: 1; DIP7; flyback; Uin: 85÷265V
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 65kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...130°C
Topology: flyback
Input voltage: 85...265V
Breakdown voltage: 650V
Duty cycle factor: 0...75%
Power: 26/18W
Application: SMPS
Operating voltage: 10.5...25V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ICE3B1565JFKLA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; DIP8; flyback; 85÷265VAC; 650V; 42W
Type of integrated circuit: PMIC
Case: DIP8
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 85...265V AC
Breakdown voltage: 650V
Power: 42W
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; DIP8; flyback; 85÷265VAC; 650V; 42W
Type of integrated circuit: PMIC
Case: DIP8
Mounting: THT
Operating temperature: -25...130°C
Topology: flyback
Input voltage: 85...265V AC
Breakdown voltage: 650V
Power: 42W
auf Bestellung 1300 Stücke:
Lieferzeit 14-21 Tag (e)
| GS66502BMRXUSA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 6.3A; Idm: 15A; GaNPX
Technology: GaN
Case: GaNPX
Mounting: SMD
Kind of package: tape
On-state resistance: 516mΩ
Pulsed drain current: 15A
Gate charge: 1.6nC
Polarisation: unipolar
Drain current: 6.3A
Kind of channel: enhancement
Drain-source voltage: 650V
Kind of transistor: HEMT
Type of transistor: N-JFET
Gate-source voltage: -10...7V
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 6.3A; Idm: 15A; GaNPX
Technology: GaN
Case: GaNPX
Mounting: SMD
Kind of package: tape
On-state resistance: 516mΩ
Pulsed drain current: 15A
Gate charge: 1.6nC
Polarisation: unipolar
Drain current: 6.3A
Kind of channel: enhancement
Drain-source voltage: 650V
Kind of transistor: HEMT
Type of transistor: N-JFET
Gate-source voltage: -10...7V
Produkt ist nicht verfügbar
Mindestbestellmenge: 250 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| GS0650306LLMRXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 700V; 20A; Idm: 67A; TOLL
Technology: GaN
Case: TOLL
Mounting: SMD
Kind of package: tape
On-state resistance: 0.1Ω
Pulsed drain current: 67A
Gate charge: 6.7nC
Polarisation: unipolar
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 700V
Kind of transistor: HEMT
Type of transistor: N-JFET
Gate-source voltage: -10...7V
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 700V; 20A; Idm: 67A; TOLL
Technology: GaN
Case: TOLL
Mounting: SMD
Kind of package: tape
On-state resistance: 0.1Ω
Pulsed drain current: 67A
Gate charge: 6.7nC
Polarisation: unipolar
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 700V
Kind of transistor: HEMT
Type of transistor: N-JFET
Gate-source voltage: -10...7V
Produkt ist nicht verfügbar
Mindestbestellmenge: 250 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IGOT60R070D1AUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A
Type of transistor: N-JFET
Power dissipation: 125W
Case: PG-DSO-20
Mounting: SMD
Gate charge: 5.8nC
Kind of package: tape
Kind of channel: enhancement
Drain-source voltage: 600V
Kind of transistor: HEMT
Gate-source voltage: -10V
On-state resistance: 70mΩ
Gate current: 20mA
Pulsed drain current: 60A
Polarisation: unipolar
Technology: CoolGaN™
Drain current: 31A
Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A
Type of transistor: N-JFET
Power dissipation: 125W
Case: PG-DSO-20
Mounting: SMD
Gate charge: 5.8nC
Kind of package: tape
Kind of channel: enhancement
Drain-source voltage: 600V
Kind of transistor: HEMT
Gate-source voltage: -10V
On-state resistance: 70mΩ
Gate current: 20mA
Pulsed drain current: 60A
Polarisation: unipolar
Technology: CoolGaN™
Drain current: 31A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FM25L16B-DG |
|
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: SPI
Memory organisation: 2kx8bit
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Clock frequency: 20MHz
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: SPI
Memory organisation: 2kx8bit
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Clock frequency: 20MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 81 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FM25L16B-DGTR |
|
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: SPI
Memory organisation: 2kx8bit
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Clock frequency: 20MHz
Kind of package: reel; tape
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; DFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: SPI
Memory organisation: 2kx8bit
Case: DFN8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Clock frequency: 20MHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IR2125PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; -2÷1A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -2...1A
Power: 1W
Number of channels: 1
Supply voltage: 12...18V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-on time: 150ns
Turn-off time: 150ns
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; -2÷1A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -2...1A
Power: 1W
Number of channels: 1
Supply voltage: 12...18V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-on time: 150ns
Turn-off time: 150ns
auf Bestellung 133 Stücke:
Lieferzeit 14-21 Tag (e)
| IR2121PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; DIP8; -2÷1A; 1W; Ch: 1; 5V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -2...1A
Number of channels: 1
Supply voltage: 12...18V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 5V
Turn-on time: 150ns
Power: 1W
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; DIP8; -2÷1A; 1W; Ch: 1; 5V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -2...1A
Number of channels: 1
Supply voltage: 12...18V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 5V
Turn-on time: 150ns
Power: 1W
Turn-off time: 105ns
auf Bestellung 109 Stücke:
Lieferzeit 14-21 Tag (e)
| IR2125SPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO16; -2÷1A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO16
Output current: -2...1A
Power: 1.25W
Number of channels: 1
Supply voltage: 12...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-on time: 150ns
Turn-off time: 150ns
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO16; -2÷1A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO16
Output current: -2...1A
Power: 1.25W
Number of channels: 1
Supply voltage: 12...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-on time: 150ns
Turn-off time: 150ns
auf Bestellung 939 Stücke:
Lieferzeit 14-21 Tag (e)
| IR2128STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPB160N04S4H1ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 167W; TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 167W
Case: TO263-7
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 137nC
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 167W; TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 167W
Case: TO263-7
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 137nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPB160N04S4LH1ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 160A; Idm: 640A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 167W
Case: PG-TO263-7-3
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 640A
Technology: OptiMOS™ T2
Gate-source voltage: -16...20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 160A; Idm: 640A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 167W
Case: PG-TO263-7-3
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 640A
Technology: OptiMOS™ T2
Gate-source voltage: -16...20V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRS2304SPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Power: 625mW
Turn-off time: 185ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Power: 625mW
Turn-off time: 185ns
auf Bestellung 62 Stücke:
Lieferzeit 14-21 Tag (e)
| BTS4141N |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-SOT223-4
On-state resistance: 0.175Ω
Technology: Classic PROFET
Output voltage: 12...45V
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-SOT223-4
On-state resistance: 0.175Ω
Technology: Classic PROFET
Output voltage: 12...45V
auf Bestellung 2376 Stücke:
Lieferzeit 14-21 Tag (e)
| BTS4880R |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.625A; Ch: 1; N-Channel; SMD; BSSOP36
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.625A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: BSSOP36
On-state resistance: 0.15Ω
Supply voltage: 11...45V DC
Technology: Classic PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.625A; Ch: 1; N-Channel; SMD; BSSOP36
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.625A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: BSSOP36
On-state resistance: 0.15Ω
Supply voltage: 11...45V DC
Technology: Classic PROFET
auf Bestellung 750 Stücke:
Lieferzeit 14-21 Tag (e)
| BTS452T |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 1; N-Channel; SMD; TO252-5
Kind of output: N-Channel
Technology: Classic PROFET
Case: TO252-5
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 0.15Ω
Mounting: SMD
Supply voltage: 6...52V DC
Output current: 1.8A
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 1; N-Channel; SMD; TO252-5
Kind of output: N-Channel
Technology: Classic PROFET
Case: TO252-5
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 0.15Ω
Mounting: SMD
Supply voltage: 6...52V DC
Output current: 1.8A
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTS4175SGA |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Case: SO8
On-state resistance: 0.175Ω
Mounting: SMD
Type of integrated circuit: power switch
Number of channels: 1
Output current: 1.3A
Supply voltage: 6...52V DC
Technology: Classic PROFET
Kind of integrated circuit: high-side
Kind of output: N-Channel
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Case: SO8
On-state resistance: 0.175Ω
Mounting: SMD
Type of integrated circuit: power switch
Number of channels: 1
Output current: 1.3A
Supply voltage: 6...52V DC
Technology: Classic PROFET
Kind of integrated circuit: high-side
Kind of output: N-Channel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BTS436L2GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.8A; Ch: 1; N-Channel; SMD; D2PAK; 75W
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 9.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: D2PAK
On-state resistance: 35mΩ
Supply voltage: 4.7...41V DC
Technology: SIPMOS™
Operating temperature: -40...150°C
Power dissipation: 75W
Integrated circuit features: thermal protection
Application: automotive industry
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.8A; Ch: 1; N-Channel; SMD; D2PAK; 75W
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 9.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: D2PAK
On-state resistance: 35mΩ
Supply voltage: 4.7...41V DC
Technology: SIPMOS™
Operating temperature: -40...150°C
Power dissipation: 75W
Integrated circuit features: thermal protection
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SPD06N80C3ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.8A; Idm: 18A; 83W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.8A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 18A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.8A; Idm: 18A; 83W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.8A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 18A
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRFR1205TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 37A; 107W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 37A
Power dissipation: 107W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 37A; 107W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 37A
Power dissipation: 107W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 2147 Stücke:
Lieferzeit 14-21 Tag (e)
| BGS14MPA9E6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SP4T; Ch: 4; MIPI; ATSLP-9-3; 1.65÷1.95VDC; 0.05÷6GHz
Type of integrated circuit: RF switch
Output configuration: SP4T
Number of channels: 4
Case: ATSLP-9-3
Supply voltage: 1.65...1.95V DC
Mounting: SMD
Bandwidth: 0.05...6GHz
Application: telecommunication
Interface: MIPI
Category: Analog multiplexers and switches
Description: IC: RF switch; SP4T; Ch: 4; MIPI; ATSLP-9-3; 1.65÷1.95VDC; 0.05÷6GHz
Type of integrated circuit: RF switch
Output configuration: SP4T
Number of channels: 4
Case: ATSLP-9-3
Supply voltage: 1.65...1.95V DC
Mounting: SMD
Bandwidth: 0.05...6GHz
Application: telecommunication
Interface: MIPI
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRS21867STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4...4A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4...4A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
auf Bestellung 1238 Stücke:
Lieferzeit 14-21 Tag (e)
| IRS2186STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4...4A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4...4A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
auf Bestellung 1272 Stücke:
Lieferzeit 14-21 Tag (e)
| IRS2110SPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16
Output current: -2...2A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-on time: 155ns
Turn-off time: 137ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16
Output current: -2...2A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-on time: 155ns
Turn-off time: 137ns
auf Bestellung 57 Stücke:
Lieferzeit 14-21 Tag (e)
| IRS21864SPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -4...4A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -4...4A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRS2118PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -600...290mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -600...290mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRS2181STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1.9A; Ch: 2; MOSFET; 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 1.9A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Integrated circuit features: MOSFET
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1.9A; Ch: 2; MOSFET; 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 1.9A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Integrated circuit features: MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRS2109STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRS21864STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRS21814STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Supply voltage: 10...20V DC
Operating temperature: -40...125°C
Type of integrated circuit: driver
Voltage class: 600V
Turn-on time: 220ns
Power: 1W
Kind of package: reel; tape
Case: SO14
Turn-off time: 240ns
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 2
Topology: MOSFET half-bridge
Mounting: SMD
Output current: -2.3...1.9A
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Supply voltage: 10...20V DC
Operating temperature: -40...125°C
Type of integrated circuit: driver
Voltage class: 600V
Turn-on time: 220ns
Power: 1W
Kind of package: reel; tape
Case: SO14
Turn-off time: 240ns
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 2
Topology: MOSFET half-bridge
Mounting: SMD
Output current: -2.3...1.9A
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRS2101STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRS21271STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; current sensor,high-side; SO8; -600÷290mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current sensor; high-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 1
Supply voltage: 9...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 190ns
Category: MOSFET/IGBT drivers
Description: IC: driver; current sensor,high-side; SO8; -600÷290mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current sensor; high-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 1
Supply voltage: 9...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 190ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRS2183STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1.9A; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 1.9A
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Integrated circuit features: MOSFET
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1.9A; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 1.9A
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Integrated circuit features: MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF7205TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.6A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.6A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.6A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.6A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
auf Bestellung 1715 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF7105TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 25/-25V; 3.5/-2.3A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25/-25V
Drain current: 3.5/-2.3A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.1/0.25Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 25/-25V; 3.5/-2.3A; 2W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25/-25V
Drain current: 3.5/-2.3A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.1/0.25Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1599 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF7101TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.5A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.5A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRF7104TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.3A; 2W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.3A; 2W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BC858CE6327 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
| IR2109STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -250...120mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 200ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -250...120mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 200ns
auf Bestellung 3414 Stücke:
Lieferzeit 14-21 Tag (e)
| IR21094STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -250...120mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 200ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -250...120mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 200ns
auf Bestellung 1049 Stücke:
Lieferzeit 14-21 Tag (e)
| IR21094SPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -250...120mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 200ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -250...120mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 200ns
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| IR21084STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC14; 350mA; Ch: 2; MOSFET; 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC14
Output current: 0.35A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Integrated circuit features: MOSFET
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC14; 350mA; Ch: 2; MOSFET; 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC14
Output current: 0.35A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Integrated circuit features: MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| CY8C4245AXI-483 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP44; 4kBSRAM,32kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Clock frequency: 48MHz
Integrated circuit features: CapSense; LCD controller
Kind of core: 32-bit
Memory: 4kB SRAM; 32kB FLASH
Case: TQFP44
Mounting: SMD
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 36
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP44; 4kBSRAM,32kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Clock frequency: 48MHz
Integrated circuit features: CapSense; LCD controller
Kind of core: 32-bit
Memory: 4kB SRAM; 32kB FLASH
Case: TQFP44
Mounting: SMD
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 36
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 1600 Stücke
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| CY8C4125AXI-483 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,32kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Clock frequency: 24MHz
Integrated circuit features: CapSense; LCD controller
Kind of core: 32-bit
Memory: 4kB SRAM; 32kB FLASH
Case: TQFP44
Mounting: SMD
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 36
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,32kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Clock frequency: 24MHz
Integrated circuit features: CapSense; LCD controller
Kind of core: 32-bit
Memory: 4kB SRAM; 32kB FLASH
Case: TQFP44
Mounting: SMD
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 36
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY8C27543-24AXI |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 256BSRAM,16kBFLASH
Type of integrated circuit: PSoC microcontroller
Clock frequency: 24MHz
Case: TQFP44
Memory: 256B SRAM; 16kB FLASH
Number of inputs/outputs: 40
Mounting: SMD
Supply voltage: 3...5.25V DC
Interface: I2C; SPI; UART
Kind of core: 8-bit
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 256BSRAM,16kBFLASH
Type of integrated circuit: PSoC microcontroller
Clock frequency: 24MHz
Case: TQFP44
Memory: 256B SRAM; 16kB FLASH
Number of inputs/outputs: 40
Mounting: SMD
Supply voltage: 3...5.25V DC
Interface: I2C; SPI; UART
Kind of core: 8-bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 160 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY8C4124AXI-443 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,16kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 36
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 16kB FLASH
Clock frequency: 24MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,16kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 36
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 16kB FLASH
Clock frequency: 24MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 160 Stücke
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Stück im Wert von UAH
| CY8C4125AXI-473 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,32kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Clock frequency: 24MHz
Integrated circuit features: CapSense; LCD controller
Kind of core: 32-bit
Memory: 4kB SRAM; 32kB FLASH
Case: TQFP44
Mounting: SMD
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 36
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,32kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Clock frequency: 24MHz
Integrated circuit features: CapSense; LCD controller
Kind of core: 32-bit
Memory: 4kB SRAM; 32kB FLASH
Case: TQFP44
Mounting: SMD
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 36
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 320 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY8C4125AXQ-483 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 36
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 24MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 36
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 24MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 320 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY8C4245AXI-473 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP44; 4kBSRAM,32kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Clock frequency: 48MHz
Integrated circuit features: CapSense; LCD controller
Kind of core: 32-bit
Memory: 4kB SRAM; 32kB FLASH
Case: TQFP44
Mounting: SMD
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 36
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP44; 4kBSRAM,32kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Clock frequency: 48MHz
Integrated circuit features: CapSense; LCD controller
Kind of core: 32-bit
Memory: 4kB SRAM; 32kB FLASH
Case: TQFP44
Mounting: SMD
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 36
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 1600 Stücke
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Stück im Wert von UAH
| CY8C4245AZI-M443 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP44; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 38
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 48MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP44; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 38
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 48MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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Stück im Wert von UAH
| IRF4104PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 143 Stücke:
Lieferzeit 14-21 Tag (e)
| IPP041N04NGXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 94W; PG-TO220-3
Power dissipation: 94W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 80A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
On-state resistance: 4.1mΩ
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 94W; PG-TO220-3
Power dissipation: 94W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 80A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
On-state resistance: 4.1mΩ
Mounting: THT
auf Bestellung 156 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF40H233XTMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; StrongIRFET™; unipolar; 40V; 32A; 50W
Type of transistor: N-MOSFET x2
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 32A
Pulsed drain current: 140A
Power dissipation: 50W
Case: PQFN5X6
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; StrongIRFET™; unipolar; 40V; 32A; 50W
Type of transistor: N-MOSFET x2
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 32A
Pulsed drain current: 140A
Power dissipation: 50W
Case: PQFN5X6
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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Stück im Wert von UAH
| AUIRF4104STRL |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 68nC
Kind of package: reel
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 68nC
Kind of package: reel
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BAS3007ARPPE6327HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 30V; If: 0.9A; Ifsm: 5A; SOT143; SMT
Case: SOT143
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Max. forward impulse current: 5A
Features of semiconductor devices: Schottky
Max. off-state voltage: 30V
Electrical mounting: SMT
Load current: 0.9A
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 30V; If: 0.9A; Ifsm: 5A; SOT143; SMT
Case: SOT143
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Max. forward impulse current: 5A
Features of semiconductor devices: Schottky
Max. off-state voltage: 30V
Electrical mounting: SMT
Load current: 0.9A
auf Bestellung 1589 Stücke:
Lieferzeit 14-21 Tag (e)
| BAS3005B02VH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 30V; 0.5A
Type of diode: Schottky switching
Case: SC79
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Max. forward impulse current: 5A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 30V; 0.5A
Type of diode: Schottky switching
Case: SC79
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Max. forward impulse current: 5A
auf Bestellung 695 Stücke:
Lieferzeit 14-21 Tag (e)
| S29AL008J70TFI010 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; TSSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 8Mb FLASH
Operating voltage: 2.7...3.6V
Case: TSSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Interface: CFI; parallel
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; TSSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 8Mb FLASH
Operating voltage: 2.7...3.6V
Case: TSSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Interface: CFI; parallel
auf Bestellung 843 Stücke:
Lieferzeit 14-21 Tag (e)
| TT215N22KOF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 215A; BG-PB50-1; Ifsm: 7kA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 215A
Case: BG-PB50-1
Max. forward voltage: 1.8V
Max. forward impulse current: 7kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 215A; BG-PB50-1; Ifsm: 7kA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 215A
Case: BG-PB50-1
Max. forward voltage: 1.8V
Max. forward impulse current: 7kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLE8366EVXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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Stück im Wert von UAH