Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (129159) > Seite 2075 nach 2153
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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IRS2103STRPBF | INFINEON TECHNOLOGIES |
 Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -600...290mA Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 750ns Turn-off time: 185ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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ITS4140N | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 0.2A; Ch: 1; N-Channel; SMD; SOT223-4 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.2A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223-4 Supply voltage: 4.9...60V DC Technology: Industrial PROFET |
auf Bestellung 3198 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS159NH6327XTSA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.23A Power dissipation: 0.36W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 8Ω Mounting: SMD Kind of channel: depletion Technology: SIPMOS™ |
auf Bestellung 8831 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR402WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: LED drivers Description: IC: driver; single transistor; current regulator,LED driver Case: SOT343 Mounting: SMD Output current: 20...60mA Type of integrated circuit: driver Integrated circuit features: linear dimming Kind of integrated circuit: current regulator; LED driver Number of channels: 1 Operating voltage: 1.2...18V DC Topology: single transistor |
auf Bestellung 2972 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRFB3006GPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 375W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 270A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.5Ω Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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ICL8001GXUMA1 | INFINEON TECHNOLOGIES |
Category: LED drivers Description: IC: driver; flyback; PFC controller,SMPS controller,LED driver Type of integrated circuit: driver Topology: flyback Kind of integrated circuit: LED driver; PFC controller; SMPS controller Case: PG-DSO-8 Number of channels: 1 Integrated circuit features: phase-cut dimming; soft-start function Mounting: SMD Operating voltage: 10.5...26V DC |
auf Bestellung 117 Stücke: Lieferzeit 14-21 Tag (e) |
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IRS25401PBF | INFINEON TECHNOLOGIES |
Category: LED drivers Description: IC: driver; buck; high-/low-side,LED driver; DIP8; -700÷500mA; 1W Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; LED driver Output current: -700...500mA Case: DIP8 Mounting: THT Topology: buck Number of channels: 2 Operating temperature: -25...125°C Kind of package: tube Turn-on time: 320ns Power: 1W Turn-off time: 180ns Supply voltage: 8...16.6V DC Voltage class: 200V |
auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP147N12N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 56A; 107W; PG-TO220-3 Mounting: THT Power dissipation: 107W Polarisation: unipolar Technology: OptiMOS™ 3 Drain current: 56A Kind of channel: enhancement Drain-source voltage: 120V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: PG-TO220-3 On-state resistance: 14.7mΩ |
auf Bestellung 39 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR4620TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 24A; 144W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 24A Power dissipation: 144W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IPB042N10N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO263-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Power dissipation: 214W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 |
auf Bestellung 979 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRS2106STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -600...290mA Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 320ns Turn-off time: 235ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BAT5404WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 230mW Type of diode: Schottky switching Case: SOT323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: double series Max. forward voltage: 0.8V Max. forward impulse current: 0.6A Power dissipation: 0.23W |
auf Bestellung 2691 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT5405WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 230mW Power dissipation: 0.23W Case: SOT323 Mounting: SMD Max. forward impulse current: 0.6A Max. forward voltage: 0.8V Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common cathode; double Type of diode: Schottky switching |
auf Bestellung 2110 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IPF042N10NF2SATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 139A; Idm: 556A; 167W; D2PAK-7 Mounting: SMD Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: D2PAK-7 On-state resistance: 4.25mΩ Pulsed drain current: 556A Power dissipation: 167W Gate charge: 57nC Polarisation: unipolar Technology: StrongIRFET™ 2 Drain current: 139A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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BSS138IXTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 230mA; 360mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.23A Power dissipation: 0.36W Case: SOT23 On-state resistance: 3.5Ω Mounting: SMD Kind of channel: enhancement Gate charge: 1nC |
auf Bestellung 2105 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IPD50N06S214ATMA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 50A; 136W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 50A Power dissipation: 136W Case: DPAK; TO252 On-state resistance: 10.8mΩ Mounting: SMD Gate charge: 52nC Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IPD30N06S2L23ATMA3 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 30A; 100W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 30A Power dissipation: 100W Case: DPAK; TO252 On-state resistance: 15.9mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 33nC Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IPD096N08N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 73A; 100W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 73A Power dissipation: 100W Case: DPAK; TO252 On-state resistance: 7.9mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 35nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BTS282ZE3230AKSA2 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 36A; Ch: 1; N-Channel; THT; tube; 300W Mounting: THT Output current: 36A Type of integrated circuit: power switch Kind of output: N-Channel Power dissipation: 300W Operating temperature: -40...175°C Integrated circuit features: internal temperature sensor Technology: TEMPFET® Output voltage: 49V Kind of package: tube Case: PG-TO220-7-12 Kind of integrated circuit: low-side Number of channels: 1 On-state resistance: 6.5mΩ |
auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
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SPB20N60S5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 208W Case: TO263 Mounting: SMD Kind of channel: enhancement Gate charge: 21nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IPD100N04S402ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; DPAK,TO252 Case: DPAK; TO252 Drain current: 100A Kind of channel: enhancement Drain-source voltage: 40V Application: automotive industry Type of transistor: N-MOSFET On-state resistance: 1.7mΩ Mounting: SMD Power dissipation: 150W Gate charge: 118nC Polarisation: unipolar |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRF1310NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 160W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 42A Power dissipation: 160W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: THT Gate charge: 73.3nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 1186 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRF1310NSTRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 140A; 160W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 30A Power dissipation: 160W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: SMD Kind of channel: enhancement Pulsed drain current: 140A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SPB21N50C3ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 560V; 21A; 208W; D2PAK-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 560V Drain current: 21A Power dissipation: 208W Case: D2PAK-3 On-state resistance: 0.19Ω Mounting: SMD Kind of channel: enhancement Gate charge: 10nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IPA50R140CPXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 23A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 23A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.14Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: CoolMOS™ |
auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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SPP15N60C3XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 156W; TO220-3 Drain-source voltage: 600V Drain current: 15A Case: TO220-3 Polarisation: unipolar On-state resistance: 0.28Ω Power dissipation: 156W Kind of channel: enhancement Gate charge: 63nC Type of transistor: N-MOSFET Mounting: THT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| ISP16DP10LMXTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar Mounting: SMD Polarisation: unipolar Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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BSS84PH7894XTMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -170mA; 360mW; SOT23 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -60V Drain current: -170mA Power dissipation: 0.36W Case: SOT23 Mounting: SMD Gate charge: 1nC Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IKW75N65EL5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; Trench; 650V; 80A; 536W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 80A Power dissipation: 536W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Technology: Trench |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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SMBT2907AE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.33W; SOT23 Type of transistor: PNP Polarisation: bipolar Power dissipation: 0.33W Case: SOT23 Mounting: SMD Collector-emitter voltage: 60V Frequency: 200MHz Collector current: 0.6A |
auf Bestellung 857 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRFP4110PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Power dissipation: 370W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IAUZ40N08S5N100ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 40A; Idm: 160A; 68W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 40A Power dissipation: 68W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 14.5mΩ Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape Pulsed drain current: 160A Gate charge: 24.2nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IPP030N10N5AKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 250W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Power dissipation: 250W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: THT Kind of channel: enhancement Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IPP024N06N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Power dissipation: 250W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: OptiMOS™ 3 |
auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IRFU024NPBFAKLA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 45W; IPAK,TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 17A Power dissipation: 45W Case: IPAK; TO251 Mounting: THT Gate charge: 20nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IRLML2060TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; 1.25W; SOT23 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.2A Power dissipation: 1.25W Case: SOT23 Mounting: SMD Kind of channel: enhancement Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BC817K40WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 500mA; 250mW; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.25W Case: SC70; SOT323 Current gain: 250 Mounting: SMD Frequency: 170MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IPB073N15N5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 81A; 214W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 150V Drain current: 81A Power dissipation: 214W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 7.3mΩ Mounting: SMD Gate charge: 49nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BC817SUE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.5A; 1W; SC74 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 1W Case: SC74 Mounting: SMD Frequency: 170MHz |
auf Bestellung 126 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SPP04N80C3 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4A; 63W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 4A Power dissipation: 63W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 1.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 185 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SPD04N80C3ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.5A; Idm: 12A; 63W Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.5A Pulsed drain current: 12A Power dissipation: 63W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 1.3Ω Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IHW40N120R5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 40A; 197W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 197W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 310nC Kind of package: tube Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Technology: TRENCHSTOP™ RC Turn-off time: 440ns |
auf Bestellung 126 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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PVI1050NSPBF | INFINEON TECHNOLOGIES |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 2.5kV; Gull wing 8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: photodiode Insulation voltage: 2.5kV Case: Gull wing 8 Turn-on time: 0.3ms Turn-off time: 220µs Manufacturer series: PVI-NPbF |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IRLB3036PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 380W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 270A Power dissipation: 380W Case: TO220AB Gate-source voltage: ±16V On-state resistance: 2.4mΩ Mounting: THT Gate charge: 91nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 147 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BFN26E6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 300V; 0.2A; 0.36W; SOT23 Type of transistor: NPN Collector current: 0.2A Mounting: SMD Collector-emitter voltage: 300V Power dissipation: 0.36W Polarisation: bipolar Case: SOT23 Frequency: 70MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IRG4PH20KDPBF | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 11A; 60W; TO247-3 Mounting: THT Collector-emitter voltage: 1.2kV Power dissipation: 60W Features of semiconductor devices: integrated anti-parallel diode Type of transistor: IGBT Kind of package: tube Case: TO247-3 Collector current: 11A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IRF2805PBF | INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 175A; 330W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 175A Power dissipation: 330W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4.7mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 926 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BAS7004E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT23; SMD; 70V; 70mA; 250mW Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: double series Max. forward voltage: 1V Max. forward impulse current: 0.1A Power dissipation: 0.25W |
auf Bestellung 1045 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRFI3205PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 48W; TO220FP Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 56A Power dissipation: 48W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: THT Gate charge: 113.3nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 17 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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SPA11N80C3XKSA2 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 34W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 11A Power dissipation: 34W Case: TO220-3 On-state resistance: 0.45Ω Mounting: THT Kind of channel: enhancement Gate charge: 85nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BC857CWH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar Type of transistor: PNP Polarisation: bipolar Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| BC857CE6433HTMA1 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar Type of transistor: PNP Polarisation: bipolar Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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IGW30N60TPXKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 38A; 100W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 38A Power dissipation: 100W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Technology: TRENCHSTOP™ Pulsed collector current: 90A Turn-on time: 38ns Turn-off time: 279ns Gate charge: 130nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IRLML2246TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.6A; 1.3W; SOT23 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.6A Power dissipation: 1.3W Case: SOT23 Mounting: SMD Kind of channel: enhancement Features of semiconductor devices: logic level Kind of package: reel |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IPA80R900P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 27W; TO220FP; ESD Case: TO220FP Mounting: THT Kind of package: tube Power dissipation: 27W Gate charge: 17nC Polarisation: unipolar Version: ESD Technology: CoolMOS™ P7 Drain current: 4.6A Kind of channel: enhancement Drain-source voltage: 800V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 0.75Ω |
auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IPN80R900P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 7W; PG-SOT223; ESD Power dissipation: 7W Gate charge: 15nC Polarisation: unipolar Version: ESD Technology: CoolMOS™ P7 Drain current: 3.9A Kind of channel: enhancement Drain-source voltage: 800V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel Case: PG-SOT223 On-state resistance: 0.9Ω Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IRFP9140NPBF | INFINEON TECHNOLOGIES |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -21A; 120W; TO247AC Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -21A Power dissipation: 120W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.117Ω Mounting: THT Gate charge: 64.7nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® |
auf Bestellung 370 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRF3007STRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 62A; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 62A Case: D2PAK Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IRF3415STRLPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO262 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 43A Power dissipation: 200W Case: TO262 Mounting: THT Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRFR9120NTRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -6.5A; 39W; DPAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -6.5A Power dissipation: 39W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
auf Bestellung 2344 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IRS2103STRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 185ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 750ns
Turn-off time: 185ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ITS4140N |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.2A; Ch: 1; N-Channel; SMD; SOT223-4
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-4
Supply voltage: 4.9...60V DC
Technology: Industrial PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.2A; Ch: 1; N-Channel; SMD; SOT223-4
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-4
Supply voltage: 4.9...60V DC
Technology: Industrial PROFET
auf Bestellung 3198 Stücke:
Lieferzeit 14-21 Tag (e)
| BSS159NH6327XTSA2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.23A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of channel: depletion
Technology: SIPMOS™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.23A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of channel: depletion
Technology: SIPMOS™
auf Bestellung 8831 Stücke:
Lieferzeit 14-21 Tag (e)
| BCR402WH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Case: SOT343
Mounting: SMD
Output current: 20...60mA
Type of integrated circuit: driver
Integrated circuit features: linear dimming
Kind of integrated circuit: current regulator; LED driver
Number of channels: 1
Operating voltage: 1.2...18V DC
Topology: single transistor
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Case: SOT343
Mounting: SMD
Output current: 20...60mA
Type of integrated circuit: driver
Integrated circuit features: linear dimming
Kind of integrated circuit: current regulator; LED driver
Number of channels: 1
Operating voltage: 1.2...18V DC
Topology: single transistor
auf Bestellung 2972 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFB3006GPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ICL8001GXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; flyback; PFC controller,SMPS controller,LED driver
Type of integrated circuit: driver
Topology: flyback
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Case: PG-DSO-8
Number of channels: 1
Integrated circuit features: phase-cut dimming; soft-start function
Mounting: SMD
Operating voltage: 10.5...26V DC
Category: LED drivers
Description: IC: driver; flyback; PFC controller,SMPS controller,LED driver
Type of integrated circuit: driver
Topology: flyback
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Case: PG-DSO-8
Number of channels: 1
Integrated circuit features: phase-cut dimming; soft-start function
Mounting: SMD
Operating voltage: 10.5...26V DC
auf Bestellung 117 Stücke:
Lieferzeit 14-21 Tag (e)
| IRS25401PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; buck; high-/low-side,LED driver; DIP8; -700÷500mA; 1W
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; LED driver
Output current: -700...500mA
Case: DIP8
Mounting: THT
Topology: buck
Number of channels: 2
Operating temperature: -25...125°C
Kind of package: tube
Turn-on time: 320ns
Power: 1W
Turn-off time: 180ns
Supply voltage: 8...16.6V DC
Voltage class: 200V
Category: LED drivers
Description: IC: driver; buck; high-/low-side,LED driver; DIP8; -700÷500mA; 1W
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; LED driver
Output current: -700...500mA
Case: DIP8
Mounting: THT
Topology: buck
Number of channels: 2
Operating temperature: -25...125°C
Kind of package: tube
Turn-on time: 320ns
Power: 1W
Turn-off time: 180ns
Supply voltage: 8...16.6V DC
Voltage class: 200V
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
| IPP147N12N3GXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 56A; 107W; PG-TO220-3
Mounting: THT
Power dissipation: 107W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 56A
Kind of channel: enhancement
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
On-state resistance: 14.7mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 56A; 107W; PG-TO220-3
Mounting: THT
Power dissipation: 107W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 56A
Kind of channel: enhancement
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
On-state resistance: 14.7mΩ
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFR4620TRLPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; 144W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Power dissipation: 144W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; 144W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Power dissipation: 144W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPB042N10N3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 979 Stücke:
Lieferzeit 14-21 Tag (e)
| IRS2106STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 320ns
Turn-off time: 235ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BAT5404WH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 230mW
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 230mW
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
auf Bestellung 2691 Stücke:
Lieferzeit 14-21 Tag (e)
| BAT5405WH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 230mW
Power dissipation: 0.23W
Case: SOT323
Mounting: SMD
Max. forward impulse current: 0.6A
Max. forward voltage: 0.8V
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 230mW
Power dissipation: 0.23W
Case: SOT323
Mounting: SMD
Max. forward impulse current: 0.6A
Max. forward voltage: 0.8V
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Type of diode: Schottky switching
auf Bestellung 2110 Stücke:
Lieferzeit 14-21 Tag (e)
| IPF042N10NF2SATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 139A; Idm: 556A; 167W; D2PAK-7
Mounting: SMD
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: D2PAK-7
On-state resistance: 4.25mΩ
Pulsed drain current: 556A
Power dissipation: 167W
Gate charge: 57nC
Polarisation: unipolar
Technology: StrongIRFET™ 2
Drain current: 139A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 139A; Idm: 556A; 167W; D2PAK-7
Mounting: SMD
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: D2PAK-7
On-state resistance: 4.25mΩ
Pulsed drain current: 556A
Power dissipation: 167W
Gate charge: 57nC
Polarisation: unipolar
Technology: StrongIRFET™ 2
Drain current: 139A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSS138IXTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 230mA; 360mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.23A
Power dissipation: 0.36W
Case: SOT23
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 1nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 230mA; 360mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.23A
Power dissipation: 0.36W
Case: SOT23
On-state resistance: 3.5Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 1nC
auf Bestellung 2105 Stücke:
Lieferzeit 14-21 Tag (e)
| IPD50N06S214ATMA2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 50A; 136W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 50A
Power dissipation: 136W
Case: DPAK; TO252
On-state resistance: 10.8mΩ
Mounting: SMD
Gate charge: 52nC
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 50A; 136W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 50A
Power dissipation: 136W
Case: DPAK; TO252
On-state resistance: 10.8mΩ
Mounting: SMD
Gate charge: 52nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPD30N06S2L23ATMA3 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 30A; 100W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 30A
Power dissipation: 100W
Case: DPAK; TO252
On-state resistance: 15.9mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 33nC
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 30A; 100W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 30A
Power dissipation: 100W
Case: DPAK; TO252
On-state resistance: 15.9mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 33nC
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPD096N08N3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 73A; 100W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 73A
Power dissipation: 100W
Case: DPAK; TO252
On-state resistance: 7.9mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 35nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 73A; 100W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 73A
Power dissipation: 100W
Case: DPAK; TO252
On-state resistance: 7.9mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 35nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BTS282ZE3230AKSA2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 36A; Ch: 1; N-Channel; THT; tube; 300W
Mounting: THT
Output current: 36A
Type of integrated circuit: power switch
Kind of output: N-Channel
Power dissipation: 300W
Operating temperature: -40...175°C
Integrated circuit features: internal temperature sensor
Technology: TEMPFET®
Output voltage: 49V
Kind of package: tube
Case: PG-TO220-7-12
Kind of integrated circuit: low-side
Number of channels: 1
On-state resistance: 6.5mΩ
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 36A; Ch: 1; N-Channel; THT; tube; 300W
Mounting: THT
Output current: 36A
Type of integrated circuit: power switch
Kind of output: N-Channel
Power dissipation: 300W
Operating temperature: -40...175°C
Integrated circuit features: internal temperature sensor
Technology: TEMPFET®
Output voltage: 49V
Kind of package: tube
Case: PG-TO220-7-12
Kind of integrated circuit: low-side
Number of channels: 1
On-state resistance: 6.5mΩ
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
| SPB20N60S5ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO263
Mounting: SMD
Kind of channel: enhancement
Gate charge: 21nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO263
Mounting: SMD
Kind of channel: enhancement
Gate charge: 21nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPD100N04S402ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; DPAK,TO252
Case: DPAK; TO252
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
On-state resistance: 1.7mΩ
Mounting: SMD
Power dissipation: 150W
Gate charge: 118nC
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; DPAK,TO252
Case: DPAK; TO252
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
On-state resistance: 1.7mΩ
Mounting: SMD
Power dissipation: 150W
Gate charge: 118nC
Polarisation: unipolar
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRF1310NPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 160W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 73.3nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 160W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 73.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1186 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF1310NSTRLPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 140A; 160W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 140A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 140A; 160W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 140A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SPB21N50C3ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 560V; 21A; 208W; D2PAK-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 560V
Drain current: 21A
Power dissipation: 208W
Case: D2PAK-3
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 10nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 560V; 21A; 208W; D2PAK-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 560V
Drain current: 21A
Power dissipation: 208W
Case: D2PAK-3
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 10nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPA50R140CPXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 23A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 23A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 23A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 23A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
| SPP15N60C3XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 156W; TO220-3
Drain-source voltage: 600V
Drain current: 15A
Case: TO220-3
Polarisation: unipolar
On-state resistance: 0.28Ω
Power dissipation: 156W
Kind of channel: enhancement
Gate charge: 63nC
Type of transistor: N-MOSFET
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 156W; TO220-3
Drain-source voltage: 600V
Drain current: 15A
Case: TO220-3
Polarisation: unipolar
On-state resistance: 0.28Ω
Power dissipation: 156W
Kind of channel: enhancement
Gate charge: 63nC
Type of transistor: N-MOSFET
Mounting: THT
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ISP16DP10LMXTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar
Mounting: SMD
Polarisation: unipolar
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar
Mounting: SMD
Polarisation: unipolar
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSS84PH7894XTMA1 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -170mA; 360mW; SOT23
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -170mA
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Gate charge: 1nC
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -170mA; 360mW; SOT23
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -170mA
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Gate charge: 1nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IKW75N65EL5XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 650V; 80A; 536W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Technology: Trench
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 650V; 80A; 536W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Technology: Trench
Produkt ist nicht verfügbar
Mindestbestellmenge: 30 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SMBT2907AE6327HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Collector-emitter voltage: 60V
Frequency: 200MHz
Collector current: 0.6A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Collector-emitter voltage: 60V
Frequency: 200MHz
Collector current: 0.6A
auf Bestellung 857 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFP4110PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 370W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 370W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IAUZ40N08S5N100ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; Idm: 160A; 68W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Power dissipation: 68W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 160A
Gate charge: 24.2nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; Idm: 160A; 68W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Power dissipation: 68W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 160A
Gate charge: 24.2nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPP030N10N5AKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPP024N06N3GXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFU024NPBFAKLA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 45W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 45W
Case: IPAK; TO251
Mounting: THT
Gate charge: 20nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 45W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 45W
Case: IPAK; TO251
Mounting: THT
Gate charge: 20nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRLML2060TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.2A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; 1.25W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.2A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BC817K40WH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 500mA; 250mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SC70; SOT323
Current gain: 250
Mounting: SMD
Frequency: 170MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 500mA; 250mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SC70; SOT323
Current gain: 250
Mounting: SMD
Frequency: 170MHz
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPB073N15N5ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 81A; 214W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 81A
Power dissipation: 214W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Gate charge: 49nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 81A; 214W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 81A
Power dissipation: 214W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Gate charge: 49nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BC817SUE6327HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 1W; SC74
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 1W
Case: SC74
Mounting: SMD
Frequency: 170MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 1W; SC74
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 1W
Case: SC74
Mounting: SMD
Frequency: 170MHz
auf Bestellung 126 Stücke:
Lieferzeit 14-21 Tag (e)
| SPP04N80C3 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; 63W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Power dissipation: 63W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; 63W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Power dissipation: 63W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 185 Stücke:
Lieferzeit 14-21 Tag (e)
| SPD04N80C3ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.5A; Idm: 12A; 63W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.5A
Pulsed drain current: 12A
Power dissipation: 63W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.5A; Idm: 12A; 63W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.5A
Pulsed drain current: 12A
Power dissipation: 63W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IHW40N120R5XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 197W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ RC
Turn-off time: 440ns
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 40A; 197W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 197W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Technology: TRENCHSTOP™ RC
Turn-off time: 440ns
auf Bestellung 126 Stücke:
Lieferzeit 14-21 Tag (e)
| PVI1050NSPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 2.5kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 2.5kV
Case: Gull wing 8
Turn-on time: 0.3ms
Turn-off time: 220µs
Manufacturer series: PVI-NPbF
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 2.5kV; Gull wing 8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: photodiode
Insulation voltage: 2.5kV
Case: Gull wing 8
Turn-on time: 0.3ms
Turn-off time: 220µs
Manufacturer series: PVI-NPbF
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRLB3036PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 91nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 91nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 147 Stücke:
Lieferzeit 14-21 Tag (e)
| BFN26E6327 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.2A; 0.36W; SOT23
Type of transistor: NPN
Collector current: 0.2A
Mounting: SMD
Collector-emitter voltage: 300V
Power dissipation: 0.36W
Polarisation: bipolar
Case: SOT23
Frequency: 70MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.2A; 0.36W; SOT23
Type of transistor: NPN
Collector current: 0.2A
Mounting: SMD
Collector-emitter voltage: 300V
Power dissipation: 0.36W
Polarisation: bipolar
Case: SOT23
Frequency: 70MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRG4PH20KDPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 11A; 60W; TO247-3
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 60W
Features of semiconductor devices: integrated anti-parallel diode
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Collector current: 11A
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 11A; 60W; TO247-3
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 60W
Features of semiconductor devices: integrated anti-parallel diode
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Collector current: 11A
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IRF2805PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 175A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 175A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 175A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 175A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 926 Stücke:
Lieferzeit 14-21 Tag (e)
| BAS7004E6327HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
auf Bestellung 1045 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFI3205PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 48W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 113.3nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 48W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 113.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
| SPA11N80C3XKSA2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 34W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 34W
Case: TO220-3
On-state resistance: 0.45Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 85nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 34W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 34W
Case: TO220-3
On-state resistance: 0.45Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 85nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
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Stück im Wert von UAH
| BC857CWH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar
Type of transistor: PNP
Polarisation: bipolar
Mounting: SMD
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar
Type of transistor: PNP
Polarisation: bipolar
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| BC857CE6433HTMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar
Type of transistor: PNP
Polarisation: bipolar
Mounting: SMD
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar
Type of transistor: PNP
Polarisation: bipolar
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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| IGW30N60TPXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 38A; 100W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 38A
Power dissipation: 100W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™
Pulsed collector current: 90A
Turn-on time: 38ns
Turn-off time: 279ns
Gate charge: 130nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 38A; 100W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 38A
Power dissipation: 100W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™
Pulsed collector current: 90A
Turn-on time: 38ns
Turn-off time: 279ns
Gate charge: 130nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRLML2246TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.6A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.6A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Kind of package: reel
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.6A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.6A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Kind of package: reel
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
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Stück im Wert von UAH
| IPA80R900P7XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 27W; TO220FP; ESD
Case: TO220FP
Mounting: THT
Kind of package: tube
Power dissipation: 27W
Gate charge: 17nC
Polarisation: unipolar
Version: ESD
Technology: CoolMOS™ P7
Drain current: 4.6A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 27W; TO220FP; ESD
Case: TO220FP
Mounting: THT
Kind of package: tube
Power dissipation: 27W
Gate charge: 17nC
Polarisation: unipolar
Version: ESD
Technology: CoolMOS™ P7
Drain current: 4.6A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
| IPN80R900P7ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 7W; PG-SOT223; ESD
Power dissipation: 7W
Gate charge: 15nC
Polarisation: unipolar
Version: ESD
Technology: CoolMOS™ P7
Drain current: 3.9A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel
Case: PG-SOT223
On-state resistance: 0.9Ω
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 7W; PG-SOT223; ESD
Power dissipation: 7W
Gate charge: 15nC
Polarisation: unipolar
Version: ESD
Technology: CoolMOS™ P7
Drain current: 3.9A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel
Case: PG-SOT223
On-state resistance: 0.9Ω
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFP9140NPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -21A; 120W; TO247AC
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -21A
Power dissipation: 120W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.117Ω
Mounting: THT
Gate charge: 64.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -21A; 120W; TO247AC
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -21A
Power dissipation: 120W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.117Ω
Mounting: THT
Gate charge: 64.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 370 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF3007STRLPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 62A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 62A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 62A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 62A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF3415STRLPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Power dissipation: 200W
Case: TO262
Mounting: THT
Kind of package: reel
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Power dissipation: 200W
Case: TO262
Mounting: THT
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRFR9120NTRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -6.5A; 39W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -6.5A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -6.5A; 39W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -6.5A
Power dissipation: 39W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 2344 Stücke:
Lieferzeit 14-21 Tag (e)