Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (121576) > Seite 2007 nach 2027
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BFR182WH6327XTSA1 | INFINEON TECHNOLOGIES |
 Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; RF; 12V; 35mA; 0.25W; SOT323 Kind of package: reel; tape Mounting: SMD Collector current: 35mA Power dissipation: 0.25W Collector-emitter voltage: 12V Frequency: 8GHz Polarisation: bipolar Kind of transistor: RF Case: SOT323 Type of transistor: NPN |
auf Bestellung 1885 Stücke: Lieferzeit 14-21 Tag (e) |
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AUIRF3710ZS | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 59A; 160W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 59A Power dissipation: 160W Case: D2PAK Mounting: SMD Kind of channel: enhancement Gate-source voltage: ±20V Gate charge: 82nC On-state resistance: 18mΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRF7855TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 12A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 12A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| BFP196E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 12V; 150mA; 0.7W; SOT143 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 12V Collector current: 0.15A Power dissipation: 0.7W Case: SOT143 Current gain: 70...140 Mounting: SMD Frequency: 7.5GHz Kind of transistor: RF Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| BFP196WNH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 12V; 150mA; 700mW; SOT343 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 12V Collector current: 0.15A Power dissipation: 0.7W Case: SOT343 Current gain: 70 Mounting: SMD Frequency: 7.5GHz |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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BB639E7904HTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape Type of diode: varicap Max. off-state voltage: 30V Load current: 20mA Case: SOD323 Mounting: SMD Semiconductor structure: single diode Features of semiconductor devices: RF Kind of package: reel; tape Leakage current: 0.2µA Capacitance: 2.4...40pF |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BFP193WH6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; SOT343 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 20V Collector current: 80mA Power dissipation: 0.58W Case: SOT343 Mounting: SMD Kind of package: reel; tape Frequency: 6GHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| ICL8800XUMA1 | INFINEON TECHNOLOGIES |
Category: LED drivers Description: IC: driver; flyback; PFC controller,SMPS controller,LED driver Mounting: SMD Operating voltage: 8.1...23V DC Protection: anti-overvoltage OVP; over current OCP; overheating OTP Topology: flyback Kind of integrated circuit: LED driver; PFC controller; SMPS controller Type of integrated circuit: driver Case: PG-DSO-8 Integrated circuit features: soft-start function Output current: -125...250mA Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| ICL8810XUMA1 | INFINEON TECHNOLOGIES |
Category: LED drivers Description: IC: driver; flyback; PFC controller,SMPS controller,LED driver Mounting: SMD Operating voltage: 8.1...23V DC Protection: anti-overvoltage OVP; over current OCP; overheating OTP Topology: flyback Kind of integrated circuit: LED driver; PFC controller; SMPS controller Type of integrated circuit: driver Case: PG-DSO-8 Integrated circuit features: soft-start function Output current: -125...250mA Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| ICL8820XUMA1 | INFINEON TECHNOLOGIES |
Category: LED drivers Description: IC: driver; flyback; PFC controller,SMPS controller,LED driver Mounting: SMD Operating voltage: 8.1...23V DC Protection: anti-overvoltage OVP; over current OCP; overheating OTP Topology: flyback Kind of integrated circuit: LED driver; PFC controller; SMPS controller Type of integrated circuit: driver Case: PG-DSO-8 Integrated circuit features: soft-start function Output current: -125...250mA Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| IPP030N06NF2SAKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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IRL1004PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 130A; 200W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 130A Power dissipation: 200W Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: logic level Technology: HEXFET® |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFU024NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 16A; 38W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 16A Power dissipation: 38W Case: IPAK Mounting: THT Gate charge: 13.3nC Kind of channel: enhancement Technology: HEXFET® On-state resistance: 75mΩ Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IKFW60N65ES5XKSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Transistor: IGBT; Field Stop; 650V; 77A; 138W; TO247-3; 1.23mJ Type of transistor: IGBT Case: TO247-3 Mounting: THT Turn-on switching energy: 1.23mJ Gate-emitter voltage: ±20V Power dissipation: 138W Collector current: 77A Pulsed collector current: 200A Collector-emitter voltage: 650V Technology: Field Stop; Trench Gate charge: 0.12µC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| IKW75N65RH5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 80A; 395W; TO247-3 Type of transistor: IGBT Power dissipation: 395W Case: TO247-3 Mounting: THT Gate charge: 168nC Gate-emitter voltage: ±20V Collector current: 80A Pulsed collector current: 300A Collector-emitter voltage: 650V |
auf Bestellung 240 Stücke: Lieferzeit 14-21 Tag (e) |
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| IKZA75N65RH5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 80A; 395W; TO247-4 Type of transistor: IGBT Power dissipation: 395W Case: TO247-4 Mounting: THT Gate charge: 168nC Collector current: 80A Pulsed collector current: 300A Collector-emitter voltage: 650V |
auf Bestellung 480 Stücke: Lieferzeit 14-21 Tag (e) |
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CY4500 | INFINEON TECHNOLOGIES |
Category: Development kits - others Description: Dev.kit: Cypress Type of development kit: Cypress Connection: USB B micro; USB C plug; USB C socket |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CY4533 | INFINEON TECHNOLOGIES |
Category: Development kits - others Description: Dev.kit: Cypress; evaluation board Type of development kit: Cypress Connection: USB C socket Kind of module: evaluation board |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| CY3280-MBR3 | INFINEON TECHNOLOGIES |
Category: Development kits - others Description: Dev.kit: Cypress; Arduino Type of development kit: Cypress Connection: USB Application - series/manufacturer: Arduino Kind of module: 4-button capacitive keypad; buzzer; evaluation board; LED; proximity sensor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| CY8CPROTO-062-4343W | INFINEON TECHNOLOGIES |
Category: Development kits - others Description: Dev.kit: Cypress; Bluetooth,prototype board,WiFi Connection: microSD; USB Type of development kit: Cypress Kind of module: Bluetooth; prototype board; WiFi |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| 2EDL05N06PJXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; EiceDRIVER™; PG-DSO-14; Ch: 2 Case: PG-DSO-14 Mounting: SMD Kind of package: reel; tape Output current: -0.7...0.36A Type of integrated circuit: driver Number of channels: 2 Technology: EiceDRIVER™ Supply voltage: 10...20V Topology: MOSFET half-bridge Integrated circuit features: integrated bootstrap functionality Kind of integrated circuit: high-/low-side; MOSFET gate driver Voltage class: 600V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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IRFR5505TRPBF | INFINEON TECHNOLOGIES |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -55V; -18A; 57W; DPAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -18A Power dissipation: 57W Case: DPAK On-state resistance: 0.11Ω Mounting: SMD Kind of channel: enhancement |
auf Bestellung 1792 Stücke: Lieferzeit 14-21 Tag (e) |
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EVAL-IMM101T-015TOBO1 (SP004177748) | INFINEON TECHNOLOGIES |
Category: Development kits - others Description: Dev.kit: evaluation; prototype board; Comp: IMM101T-015M; motors Type of development kit: evaluation Kit contents: prototype board Interface: GPIO; I2C; PWM; UART Connection: screw terminal x2 Components: IMM101T-015M Kind of module: motor driver Application: motors |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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EVAL-IMM101T-046TOBO1 (SP004177752) | INFINEON TECHNOLOGIES |
Category: Development kits - others Description: Dev.kit: evaluation; prototype board; Comp: IMM101T-046M; motors Interface: GPIO; I2C; PWM; UART Components: IMM101T-046M Kind of module: motor driver Application: motors Kit contents: prototype board Connection: screw terminal x2 Type of development kit: evaluation |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRF250P224 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 68A; 313W Type of transistor: N-MOSFET Technology: StrongIRFET™ Polarisation: unipolar Drain-source voltage: 250V Drain current: 68A Power dissipation: 313W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: THT Gate charge: 203nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 400 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IPD50P04P4L11ATMA2 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -40A; 58W Type of transistor: P-MOSFET Technology: OptiMOS® -P2 Polarisation: unipolar Drain-source voltage: -40V Drain current: -40A Power dissipation: 58W Case: PG-TO252-3-313 Gate-source voltage: -16...5V On-state resistance: 10.6mΩ Mounting: SMD Kind of channel: enhancement Pulsed drain current: -200A Gate charge: 14nC |
auf Bestellung 2335 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPD50P04P413ATMA2 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -50A; 58W; DPAK,TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -50A Power dissipation: 58W Case: DPAK; TO252 On-state resistance: 9.2mΩ Mounting: SMD Gate charge: 39nC Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| IPD50P04P413ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -45A; 58W Type of transistor: P-MOSFET Technology: OptiMOS® -P2 Polarisation: unipolar Drain-source voltage: -40V Drain current: -45A Pulsed drain current: -200A Power dissipation: 58W Case: PG-TO252-3-313 Gate-source voltage: ±20V On-state resistance: 12.6mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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IR2213SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO16 Output current: -2...1.7A Power: 1.25W Number of channels: 2 Supply voltage: 12...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 280ns Turn-off time: 225ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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XMC1403Q048X0064AAXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,64kBFLASH; XMC1400 Operating temperature: -40...105°C Type of integrated circuit: ARM microcontroller Integrated circuit features: EEPROM emulation; RTC; watchdog Supply voltage: 1.8...5.5V DC Number of A/D channels: 12 Number of 16bit timers: 16 Number of inputs/outputs: 42 Kind of architecture: Cortex M0 Memory: 16kB SRAM; 64kB FLASH Case: PG-VQFN-48 Interface: CAN x2; GPIO; USIC x4 Kind of core: 32-bit Family: XMC1400 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| XMC1403Q048X0128AAXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,128kBFLASH Operating temperature: -40...105°C Type of integrated circuit: ARM microcontroller Integrated circuit features: EEPROM emulation; RTC; watchdog Supply voltage: 1.8...5.5V DC Number of A/D channels: 12 Number of 16bit timers: 16 Number of inputs/outputs: 42 Kind of architecture: Cortex M0 Memory: 16kB SRAM; 128kB FLASH Case: PG-VQFN-48 Interface: CAN x2; GPIO; USIC x4 Kind of core: 32-bit Family: XMC1400 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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XMC1403Q048X0200AAXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,200kBFLASH Operating temperature: -40...105°C Type of integrated circuit: ARM microcontroller Integrated circuit features: EEPROM emulation; RTC; watchdog Supply voltage: 1.8...5.5V DC Number of A/D channels: 12 Number of 16bit timers: 16 Number of inputs/outputs: 42 Kind of architecture: Cortex M0 Memory: 16kB SRAM; 200kB FLASH Case: PG-VQFN-48 Interface: CAN x2; GPIO; USIC x4 Kind of core: 32-bit Family: XMC1400 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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XMC1403Q064X0064AAXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,64kBFLASH; XMC1400 Operating temperature: -40...105°C Type of integrated circuit: ARM microcontroller Integrated circuit features: EEPROM emulation; RTC; watchdog Supply voltage: 1.8...5.5V DC Number of A/D channels: 12 Number of 16bit timers: 16 Number of inputs/outputs: 55 Kind of architecture: Cortex M0 Memory: 16kB SRAM; 64kB FLASH Case: PG-VQFN-64 Interface: CAN x2; GPIO; USIC x4 Kind of core: 32-bit Family: XMC1400 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| XMC1403Q064X0128AAXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,128kBFLASH Operating temperature: -40...105°C Type of integrated circuit: ARM microcontroller Integrated circuit features: EEPROM emulation; RTC; watchdog Supply voltage: 1.8...5.5V DC Number of A/D channels: 12 Number of 16bit timers: 16 Number of inputs/outputs: 55 Kind of architecture: Cortex M0 Memory: 16kB SRAM; 128kB FLASH Case: PG-VQFN-64 Interface: CAN x2; GPIO; USIC x4 Kind of core: 32-bit Family: XMC1400 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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XMC1403Q064X0200AAXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,200kBFLASH Operating temperature: -40...105°C Type of integrated circuit: ARM microcontroller Integrated circuit features: EEPROM emulation; RTC; watchdog Supply voltage: 1.8...5.5V DC Number of A/D channels: 12 Number of 16bit timers: 16 Number of inputs/outputs: 55 Kind of architecture: Cortex M0 Memory: 16kB SRAM; 200kB FLASH Case: PG-VQFN-64 Interface: CAN x2; GPIO; USIC x4 Kind of core: 32-bit Family: XMC1400 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| S25FS512SDSNFB010 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; WSON8 Mounting: SMD Operating voltage: 1.7...2V Operating temperature: -40...105°C Kind of package: in-tray Kind of memory: NOR Interface: QUAD SPI Kind of interface: serial Operating frequency: 80MHz Memory: 512Mb FLASH Application: automotive Case: WSON8 Type of integrated circuit: FLASH memory |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1690 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| S25FS512SDSNFI013 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; WSON8 Mounting: SMD Operating voltage: 1.7...2V Operating temperature: -40...85°C Kind of package: reel; tape Kind of memory: NOR Interface: QUAD SPI Kind of interface: serial Operating frequency: 80MHz Memory: 512Mb FLASH Case: WSON8 Type of integrated circuit: FLASH memory |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| S25FS512SDSNFV011 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; WSON8; tube Mounting: SMD Operating voltage: 1.7...2V Operating temperature: -40...105°C Kind of package: tube Kind of memory: NOR Interface: QUAD SPI Kind of interface: serial Operating frequency: 80MHz Memory: 512Mb FLASH Case: WSON8 Type of integrated circuit: FLASH memory |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 410 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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IRFHS8242TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 9.9A; 2.1W; PQFN2X2 Mounting: SMD Technology: HEXFET® Type of transistor: N-MOSFET Case: PQFN2X2 Kind of package: reel Polarisation: unipolar Power dissipation: 2.1W Drain current: 9.9A Drain-source voltage: 25V Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRFHS8342TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 9.9A; 2.1W; PQFN2X2 Mounting: SMD Technology: HEXFET® Type of transistor: N-MOSFET Case: PQFN2X2 Kind of package: reel Polarisation: unipolar Power dissipation: 2.1W Drain current: 9.9A Drain-source voltage: 25V Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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AUIRGP35B60PD | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; Trench; 600V; 34A; 123W; TO247AC Mounting: THT Kind of package: tube Case: TO247AC Type of transistor: IGBT Technology: Trench Turn-on time: 34ns Turn-off time: 142ns Gate charge: 240nC Gate-emitter voltage: ±20V Collector current: 34A Pulsed collector current: 120A Power dissipation: 123W Collector-emitter voltage: 600V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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AUIRF7316QTR | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -4.9A; 2W; SO8 Type of transistor: P-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.9A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 98mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 23nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TD330N16KOFHPSA2 | INFINEON TECHNOLOGIES |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 330A; BG-PB50AT-1; Ufmax: 1.28V Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 330A Case: BG-PB50AT-1 Max. forward voltage: 1.28V Max. forward impulse current: 12.5kA Gate current: 200mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Max. load current: 330A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TT330N16KOF | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 330A; BG-PB50AT-1; screw Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 330A Case: BG-PB50AT-1 Max. forward voltage: 1.28V Max. forward impulse current: 10kA Gate current: 200mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IPP60R060P7 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 164W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IPA60R190E6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ E6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20.2A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IPA60R180P7SXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 20W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 650V Drain current: 11A Power dissipation: 20W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 53A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IPA60R180P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 26W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 650V Drain current: 11A Power dissipation: 26W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 53A Version: ESD |
Produkt ist nicht verfügbar |
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IPA60R280P6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 32W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 13.8A Power dissipation: 32W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 41 Stücke: Lieferzeit 14-21 Tag (e) |
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IPA60R280E6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 32W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ E6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 13.8A Power dissipation: 32W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 306 Stücke: Lieferzeit 14-21 Tag (e) |
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IPA60R380P6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 31W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.6A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 80 Stücke: Lieferzeit 14-21 Tag (e) |
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IPA60R400CEXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10.3A; 31W; TO220FP Kind of package: tube Technology: CoolMOS™ CE Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: THT Case: TO220FP Polarisation: unipolar On-state resistance: 0.4Ω Drain current: 10.3A Gate-source voltage: ±20V Power dissipation: 31W Drain-source voltage: 600V |
auf Bestellung 143 Stücke: Lieferzeit 14-21 Tag (e) |
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IPA60R600P6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; 28W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.3A Power dissipation: 28W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 149 Stücke: Lieferzeit 14-21 Tag (e) |
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IPA60R230P6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16.8A; 33W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 16.8A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.23Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 264 Stücke: Lieferzeit 14-21 Tag (e) |
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IPA60R099C7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 83A; 33W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ C7 Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 42nC Pulsed drain current: 83A |
auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |
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IPA60R650CEXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 28W; TO220FP Kind of package: tube Technology: CoolMOS™ CE Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: THT Case: TO220FP Polarisation: unipolar On-state resistance: 0.65Ω Drain current: 7A Gate-source voltage: ±20V Power dissipation: 28W Drain-source voltage: 600V |
auf Bestellung 70 Stücke: Lieferzeit 14-21 Tag (e) |
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IPA60R120P7 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 28W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Power dissipation: 28W Case: TO220FP On-state resistance: 0.12Ω Mounting: THT Kind of channel: enhancement Technology: CoolMOS™ P7 Kind of package: tube Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IPA60R280P7 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 24W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Power dissipation: 24W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IPA60R099P7 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 29W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 29W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IPA60R199CPXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 34W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ CP Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.199Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BFR182WH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 35mA; 0.25W; SOT323
Kind of package: reel; tape
Mounting: SMD
Collector current: 35mA
Power dissipation: 0.25W
Collector-emitter voltage: 12V
Frequency: 8GHz
Polarisation: bipolar
Kind of transistor: RF
Case: SOT323
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 35mA; 0.25W; SOT323
Kind of package: reel; tape
Mounting: SMD
Collector current: 35mA
Power dissipation: 0.25W
Collector-emitter voltage: 12V
Frequency: 8GHz
Polarisation: bipolar
Kind of transistor: RF
Case: SOT323
Type of transistor: NPN
auf Bestellung 1885 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 228+ | 0.31 EUR |
| 307+ | 0.23 EUR |
| 353+ | 0.2 EUR |
| 391+ | 0.18 EUR |
| 435+ | 0.16 EUR |
| 486+ | 0.15 EUR |
| 1000+ | 0.14 EUR |
| AUIRF3710ZS |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 59A; 160W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 59A
Power dissipation: 160W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 82nC
On-state resistance: 18mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 59A; 160W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 59A
Power dissipation: 160W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Gate charge: 82nC
On-state resistance: 18mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF7855TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BFP196E6327HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 150mA; 0.7W; SOT143
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 0.15A
Power dissipation: 0.7W
Case: SOT143
Current gain: 70...140
Mounting: SMD
Frequency: 7.5GHz
Kind of transistor: RF
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 150mA; 0.7W; SOT143
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 0.15A
Power dissipation: 0.7W
Case: SOT143
Current gain: 70...140
Mounting: SMD
Frequency: 7.5GHz
Kind of transistor: RF
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BFP196WNH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 150mA; 700mW; SOT343
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 0.15A
Power dissipation: 0.7W
Case: SOT343
Current gain: 70
Mounting: SMD
Frequency: 7.5GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 150mA; 700mW; SOT343
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 0.15A
Power dissipation: 0.7W
Case: SOT343
Current gain: 70
Mounting: SMD
Frequency: 7.5GHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BB639E7904HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape
Type of diode: varicap
Max. off-state voltage: 30V
Load current: 20mA
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: RF
Kind of package: reel; tape
Leakage current: 0.2µA
Capacitance: 2.4...40pF
Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape
Type of diode: varicap
Max. off-state voltage: 30V
Load current: 20mA
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: RF
Kind of package: reel; tape
Leakage current: 0.2µA
Capacitance: 2.4...40pF
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BFP193WH6327 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 80mA
Power dissipation: 0.58W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 6GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; SOT343
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 80mA
Power dissipation: 0.58W
Case: SOT343
Mounting: SMD
Kind of package: reel; tape
Frequency: 6GHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ICL8800XUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; flyback; PFC controller,SMPS controller,LED driver
Mounting: SMD
Operating voltage: 8.1...23V DC
Protection: anti-overvoltage OVP; over current OCP; overheating OTP
Topology: flyback
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Type of integrated circuit: driver
Case: PG-DSO-8
Integrated circuit features: soft-start function
Output current: -125...250mA
Number of channels: 1
Category: LED drivers
Description: IC: driver; flyback; PFC controller,SMPS controller,LED driver
Mounting: SMD
Operating voltage: 8.1...23V DC
Protection: anti-overvoltage OVP; over current OCP; overheating OTP
Topology: flyback
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Type of integrated circuit: driver
Case: PG-DSO-8
Integrated circuit features: soft-start function
Output current: -125...250mA
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ICL8810XUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; flyback; PFC controller,SMPS controller,LED driver
Mounting: SMD
Operating voltage: 8.1...23V DC
Protection: anti-overvoltage OVP; over current OCP; overheating OTP
Topology: flyback
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Type of integrated circuit: driver
Case: PG-DSO-8
Integrated circuit features: soft-start function
Output current: -125...250mA
Number of channels: 1
Category: LED drivers
Description: IC: driver; flyback; PFC controller,SMPS controller,LED driver
Mounting: SMD
Operating voltage: 8.1...23V DC
Protection: anti-overvoltage OVP; over current OCP; overheating OTP
Topology: flyback
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Type of integrated circuit: driver
Case: PG-DSO-8
Integrated circuit features: soft-start function
Output current: -125...250mA
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ICL8820XUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; flyback; PFC controller,SMPS controller,LED driver
Mounting: SMD
Operating voltage: 8.1...23V DC
Protection: anti-overvoltage OVP; over current OCP; overheating OTP
Topology: flyback
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Type of integrated circuit: driver
Case: PG-DSO-8
Integrated circuit features: soft-start function
Output current: -125...250mA
Number of channels: 1
Category: LED drivers
Description: IC: driver; flyback; PFC controller,SMPS controller,LED driver
Mounting: SMD
Operating voltage: 8.1...23V DC
Protection: anti-overvoltage OVP; over current OCP; overheating OTP
Topology: flyback
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Type of integrated circuit: driver
Case: PG-DSO-8
Integrated circuit features: soft-start function
Output current: -125...250mA
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPP030N06NF2SAKMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRL1004PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: HEXFET®
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 30+ | 2.39 EUR |
| IRFU024NPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 16A; 38W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 16A
Power dissipation: 38W
Case: IPAK
Mounting: THT
Gate charge: 13.3nC
Kind of channel: enhancement
Technology: HEXFET®
On-state resistance: 75mΩ
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 16A; 38W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 16A
Power dissipation: 38W
Case: IPAK
Mounting: THT
Gate charge: 13.3nC
Kind of channel: enhancement
Technology: HEXFET®
On-state resistance: 75mΩ
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IKFW60N65ES5XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Transistor: IGBT; Field Stop; 650V; 77A; 138W; TO247-3; 1.23mJ
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Turn-on switching energy: 1.23mJ
Gate-emitter voltage: ±20V
Power dissipation: 138W
Collector current: 77A
Pulsed collector current: 200A
Collector-emitter voltage: 650V
Technology: Field Stop; Trench
Gate charge: 0.12µC
Category: IGBT modules
Description: Transistor: IGBT; Field Stop; 650V; 77A; 138W; TO247-3; 1.23mJ
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Turn-on switching energy: 1.23mJ
Gate-emitter voltage: ±20V
Power dissipation: 138W
Collector current: 77A
Pulsed collector current: 200A
Collector-emitter voltage: 650V
Technology: Field Stop; Trench
Gate charge: 0.12µC
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IKW75N65RH5XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 395W; TO247-3
Type of transistor: IGBT
Power dissipation: 395W
Case: TO247-3
Mounting: THT
Gate charge: 168nC
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 395W; TO247-3
Type of transistor: IGBT
Power dissipation: 395W
Case: TO247-3
Mounting: THT
Gate charge: 168nC
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 240+ | 6.45 EUR |
| IKZA75N65RH5XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 395W; TO247-4
Type of transistor: IGBT
Power dissipation: 395W
Case: TO247-4
Mounting: THT
Gate charge: 168nC
Collector current: 80A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 395W; TO247-4
Type of transistor: IGBT
Power dissipation: 395W
Case: TO247-4
Mounting: THT
Gate charge: 168nC
Collector current: 80A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
auf Bestellung 480 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 240+ | 7.05 EUR |
| CY4500 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: Cypress
Type of development kit: Cypress
Connection: USB B micro; USB C plug; USB C socket
Category: Development kits - others
Description: Dev.kit: Cypress
Type of development kit: Cypress
Connection: USB B micro; USB C plug; USB C socket
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY4533 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: Cypress; evaluation board
Type of development kit: Cypress
Connection: USB C socket
Kind of module: evaluation board
Category: Development kits - others
Description: Dev.kit: Cypress; evaluation board
Type of development kit: Cypress
Connection: USB C socket
Kind of module: evaluation board
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY3280-MBR3 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: Cypress; Arduino
Type of development kit: Cypress
Connection: USB
Application - series/manufacturer: Arduino
Kind of module: 4-button capacitive keypad; buzzer; evaluation board; LED; proximity sensor
Category: Development kits - others
Description: Dev.kit: Cypress; Arduino
Type of development kit: Cypress
Connection: USB
Application - series/manufacturer: Arduino
Kind of module: 4-button capacitive keypad; buzzer; evaluation board; LED; proximity sensor
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY8CPROTO-062-4343W |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: Cypress; Bluetooth,prototype board,WiFi
Connection: microSD; USB
Type of development kit: Cypress
Kind of module: Bluetooth; prototype board; WiFi
Category: Development kits - others
Description: Dev.kit: Cypress; Bluetooth,prototype board,WiFi
Connection: microSD; USB
Type of development kit: Cypress
Kind of module: Bluetooth; prototype board; WiFi
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2EDL05N06PJXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; EiceDRIVER™; PG-DSO-14; Ch: 2
Case: PG-DSO-14
Mounting: SMD
Kind of package: reel; tape
Output current: -0.7...0.36A
Type of integrated circuit: driver
Number of channels: 2
Technology: EiceDRIVER™
Supply voltage: 10...20V
Topology: MOSFET half-bridge
Integrated circuit features: integrated bootstrap functionality
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Voltage class: 600V
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; EiceDRIVER™; PG-DSO-14; Ch: 2
Case: PG-DSO-14
Mounting: SMD
Kind of package: reel; tape
Output current: -0.7...0.36A
Type of integrated circuit: driver
Number of channels: 2
Technology: EiceDRIVER™
Supply voltage: 10...20V
Topology: MOSFET half-bridge
Integrated circuit features: integrated bootstrap functionality
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Voltage class: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFR5505TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -18A; 57W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -18A
Power dissipation: 57W
Case: DPAK
On-state resistance: 0.11Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -18A; 57W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -18A
Power dissipation: 57W
Case: DPAK
On-state resistance: 0.11Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1792 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 48+ | 1.52 EUR |
| 60+ | 1.21 EUR |
| 69+ | 1.04 EUR |
| 86+ | 0.84 EUR |
| 101+ | 0.71 EUR |
| 117+ | 0.61 EUR |
| 500+ | 0.48 EUR |
| 1000+ | 0.44 EUR |
| EVAL-IMM101T-015TOBO1 (SP004177748) |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: IMM101T-015M; motors
Type of development kit: evaluation
Kit contents: prototype board
Interface: GPIO; I2C; PWM; UART
Connection: screw terminal x2
Components: IMM101T-015M
Kind of module: motor driver
Application: motors
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: IMM101T-015M; motors
Type of development kit: evaluation
Kit contents: prototype board
Interface: GPIO; I2C; PWM; UART
Connection: screw terminal x2
Components: IMM101T-015M
Kind of module: motor driver
Application: motors
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 69.78 EUR |
| EVAL-IMM101T-046TOBO1 (SP004177752) |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: IMM101T-046M; motors
Interface: GPIO; I2C; PWM; UART
Components: IMM101T-046M
Kind of module: motor driver
Application: motors
Kit contents: prototype board
Connection: screw terminal x2
Type of development kit: evaluation
Category: Development kits - others
Description: Dev.kit: evaluation; prototype board; Comp: IMM101T-046M; motors
Interface: GPIO; I2C; PWM; UART
Components: IMM101T-046M
Kind of module: motor driver
Application: motors
Kit contents: prototype board
Connection: screw terminal x2
Type of development kit: evaluation
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF250P224 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 68A; 313W
Type of transistor: N-MOSFET
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 68A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 203nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 68A; 313W
Type of transistor: N-MOSFET
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 68A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 203nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 400 Stücke
Im Einkaufswagen
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| IPD50P04P4L11ATMA2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -40A; 58W
Type of transistor: P-MOSFET
Technology: OptiMOS® -P2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -40A
Power dissipation: 58W
Case: PG-TO252-3-313
Gate-source voltage: -16...5V
On-state resistance: 10.6mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: -200A
Gate charge: 14nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -40A; 58W
Type of transistor: P-MOSFET
Technology: OptiMOS® -P2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -40A
Power dissipation: 58W
Case: PG-TO252-3-313
Gate-source voltage: -16...5V
On-state resistance: 10.6mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: -200A
Gate charge: 14nC
auf Bestellung 2335 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 42+ | 1.73 EUR |
| IPD50P04P413ATMA2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -50A; 58W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -50A
Power dissipation: 58W
Case: DPAK; TO252
On-state resistance: 9.2mΩ
Mounting: SMD
Gate charge: 39nC
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -50A; 58W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -50A
Power dissipation: 58W
Case: DPAK; TO252
On-state resistance: 9.2mΩ
Mounting: SMD
Gate charge: 39nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPD50P04P413ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -45A; 58W
Type of transistor: P-MOSFET
Technology: OptiMOS® -P2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -45A
Pulsed drain current: -200A
Power dissipation: 58W
Case: PG-TO252-3-313
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -45A; 58W
Type of transistor: P-MOSFET
Technology: OptiMOS® -P2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -45A
Pulsed drain current: -200A
Power dissipation: 58W
Case: PG-TO252-3-313
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IR2213SPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16
Output current: -2...1.7A
Power: 1.25W
Number of channels: 2
Supply voltage: 12...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 280ns
Turn-off time: 225ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16
Output current: -2...1.7A
Power: 1.25W
Number of channels: 2
Supply voltage: 12...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 280ns
Turn-off time: 225ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| XMC1403Q048X0064AAXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Integrated circuit features: EEPROM emulation; RTC; watchdog
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of 16bit timers: 16
Number of inputs/outputs: 42
Kind of architecture: Cortex M0
Memory: 16kB SRAM; 64kB FLASH
Case: PG-VQFN-48
Interface: CAN x2; GPIO; USIC x4
Kind of core: 32-bit
Family: XMC1400
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Integrated circuit features: EEPROM emulation; RTC; watchdog
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of 16bit timers: 16
Number of inputs/outputs: 42
Kind of architecture: Cortex M0
Memory: 16kB SRAM; 64kB FLASH
Case: PG-VQFN-48
Interface: CAN x2; GPIO; USIC x4
Kind of core: 32-bit
Family: XMC1400
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| XMC1403Q048X0128AAXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,128kBFLASH
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Integrated circuit features: EEPROM emulation; RTC; watchdog
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of 16bit timers: 16
Number of inputs/outputs: 42
Kind of architecture: Cortex M0
Memory: 16kB SRAM; 128kB FLASH
Case: PG-VQFN-48
Interface: CAN x2; GPIO; USIC x4
Kind of core: 32-bit
Family: XMC1400
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,128kBFLASH
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Integrated circuit features: EEPROM emulation; RTC; watchdog
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of 16bit timers: 16
Number of inputs/outputs: 42
Kind of architecture: Cortex M0
Memory: 16kB SRAM; 128kB FLASH
Case: PG-VQFN-48
Interface: CAN x2; GPIO; USIC x4
Kind of core: 32-bit
Family: XMC1400
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| XMC1403Q048X0200AAXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,200kBFLASH
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Integrated circuit features: EEPROM emulation; RTC; watchdog
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of 16bit timers: 16
Number of inputs/outputs: 42
Kind of architecture: Cortex M0
Memory: 16kB SRAM; 200kB FLASH
Case: PG-VQFN-48
Interface: CAN x2; GPIO; USIC x4
Kind of core: 32-bit
Family: XMC1400
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-48; 16kBSRAM,200kBFLASH
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Integrated circuit features: EEPROM emulation; RTC; watchdog
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of 16bit timers: 16
Number of inputs/outputs: 42
Kind of architecture: Cortex M0
Memory: 16kB SRAM; 200kB FLASH
Case: PG-VQFN-48
Interface: CAN x2; GPIO; USIC x4
Kind of core: 32-bit
Family: XMC1400
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| XMC1403Q064X0064AAXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Integrated circuit features: EEPROM emulation; RTC; watchdog
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of 16bit timers: 16
Number of inputs/outputs: 55
Kind of architecture: Cortex M0
Memory: 16kB SRAM; 64kB FLASH
Case: PG-VQFN-64
Interface: CAN x2; GPIO; USIC x4
Kind of core: 32-bit
Family: XMC1400
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,64kBFLASH; XMC1400
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Integrated circuit features: EEPROM emulation; RTC; watchdog
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of 16bit timers: 16
Number of inputs/outputs: 55
Kind of architecture: Cortex M0
Memory: 16kB SRAM; 64kB FLASH
Case: PG-VQFN-64
Interface: CAN x2; GPIO; USIC x4
Kind of core: 32-bit
Family: XMC1400
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| XMC1403Q064X0128AAXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,128kBFLASH
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Integrated circuit features: EEPROM emulation; RTC; watchdog
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of 16bit timers: 16
Number of inputs/outputs: 55
Kind of architecture: Cortex M0
Memory: 16kB SRAM; 128kB FLASH
Case: PG-VQFN-64
Interface: CAN x2; GPIO; USIC x4
Kind of core: 32-bit
Family: XMC1400
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,128kBFLASH
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Integrated circuit features: EEPROM emulation; RTC; watchdog
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of 16bit timers: 16
Number of inputs/outputs: 55
Kind of architecture: Cortex M0
Memory: 16kB SRAM; 128kB FLASH
Case: PG-VQFN-64
Interface: CAN x2; GPIO; USIC x4
Kind of core: 32-bit
Family: XMC1400
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| XMC1403Q064X0200AAXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,200kBFLASH
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Integrated circuit features: EEPROM emulation; RTC; watchdog
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of 16bit timers: 16
Number of inputs/outputs: 55
Kind of architecture: Cortex M0
Memory: 16kB SRAM; 200kB FLASH
Case: PG-VQFN-64
Interface: CAN x2; GPIO; USIC x4
Kind of core: 32-bit
Family: XMC1400
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-VQFN-64; 16kBSRAM,200kBFLASH
Operating temperature: -40...105°C
Type of integrated circuit: ARM microcontroller
Integrated circuit features: EEPROM emulation; RTC; watchdog
Supply voltage: 1.8...5.5V DC
Number of A/D channels: 12
Number of 16bit timers: 16
Number of inputs/outputs: 55
Kind of architecture: Cortex M0
Memory: 16kB SRAM; 200kB FLASH
Case: PG-VQFN-64
Interface: CAN x2; GPIO; USIC x4
Kind of core: 32-bit
Family: XMC1400
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S25FS512SDSNFB010 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; WSON8
Mounting: SMD
Operating voltage: 1.7...2V
Operating temperature: -40...105°C
Kind of package: in-tray
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 80MHz
Memory: 512Mb FLASH
Application: automotive
Case: WSON8
Type of integrated circuit: FLASH memory
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; WSON8
Mounting: SMD
Operating voltage: 1.7...2V
Operating temperature: -40...105°C
Kind of package: in-tray
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 80MHz
Memory: 512Mb FLASH
Application: automotive
Case: WSON8
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
Mindestbestellmenge: 1690 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| S25FS512SDSNFI013 |
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; WSON8
Mounting: SMD
Operating voltage: 1.7...2V
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 80MHz
Memory: 512Mb FLASH
Case: WSON8
Type of integrated circuit: FLASH memory
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; WSON8
Mounting: SMD
Operating voltage: 1.7...2V
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 80MHz
Memory: 512Mb FLASH
Case: WSON8
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| S25FS512SDSNFV011 |
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; WSON8; tube
Mounting: SMD
Operating voltage: 1.7...2V
Operating temperature: -40...105°C
Kind of package: tube
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 80MHz
Memory: 512Mb FLASH
Case: WSON8
Type of integrated circuit: FLASH memory
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; WSON8; tube
Mounting: SMD
Operating voltage: 1.7...2V
Operating temperature: -40...105°C
Kind of package: tube
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating frequency: 80MHz
Memory: 512Mb FLASH
Case: WSON8
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
Mindestbestellmenge: 410 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRFHS8242TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 9.9A; 2.1W; PQFN2X2
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET
Case: PQFN2X2
Kind of package: reel
Polarisation: unipolar
Power dissipation: 2.1W
Drain current: 9.9A
Drain-source voltage: 25V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 9.9A; 2.1W; PQFN2X2
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET
Case: PQFN2X2
Kind of package: reel
Polarisation: unipolar
Power dissipation: 2.1W
Drain current: 9.9A
Drain-source voltage: 25V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRFHS8342TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 9.9A; 2.1W; PQFN2X2
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET
Case: PQFN2X2
Kind of package: reel
Polarisation: unipolar
Power dissipation: 2.1W
Drain current: 9.9A
Drain-source voltage: 25V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 9.9A; 2.1W; PQFN2X2
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET
Case: PQFN2X2
Kind of package: reel
Polarisation: unipolar
Power dissipation: 2.1W
Drain current: 9.9A
Drain-source voltage: 25V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AUIRGP35B60PD |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 34A; 123W; TO247AC
Mounting: THT
Kind of package: tube
Case: TO247AC
Type of transistor: IGBT
Technology: Trench
Turn-on time: 34ns
Turn-off time: 142ns
Gate charge: 240nC
Gate-emitter voltage: ±20V
Collector current: 34A
Pulsed collector current: 120A
Power dissipation: 123W
Collector-emitter voltage: 600V
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 34A; 123W; TO247AC
Mounting: THT
Kind of package: tube
Case: TO247AC
Type of transistor: IGBT
Technology: Trench
Turn-on time: 34ns
Turn-off time: 142ns
Gate charge: 240nC
Gate-emitter voltage: ±20V
Collector current: 34A
Pulsed collector current: 120A
Power dissipation: 123W
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AUIRF7316QTR |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -4.9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 98mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 23nC
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -4.9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 98mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 23nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TD330N16KOFHPSA2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 330A; BG-PB50AT-1; Ufmax: 1.28V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 330A
Case: BG-PB50AT-1
Max. forward voltage: 1.28V
Max. forward impulse current: 12.5kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. load current: 330A
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 330A; BG-PB50AT-1; Ufmax: 1.28V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 330A
Case: BG-PB50AT-1
Max. forward voltage: 1.28V
Max. forward impulse current: 12.5kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. load current: 330A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TT330N16KOF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 330A; BG-PB50AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 330A
Case: BG-PB50AT-1
Max. forward voltage: 1.28V
Max. forward impulse current: 10kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 330A; BG-PB50AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 330A
Case: BG-PB50AT-1
Max. forward voltage: 1.28V
Max. forward impulse current: 10kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPP60R060P7 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 164W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 164W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPA60R190E6XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPA60R180P7SXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 20W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 53A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 20W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 53A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPA60R180P7XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 26W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 53A
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 26W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 53A
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPA60R280P6XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 26+ | 2.79 EUR |
| 28+ | 2.6 EUR |
| 37+ | 1.94 EUR |
| 41+ | 1.74 EUR |
| IPA60R280E6XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 306 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 38+ | 1.93 EUR |
| 43+ | 1.7 EUR |
| 47+ | 1.53 EUR |
| 50+ | 1.44 EUR |
| IPA60R380P6XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.6A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 80 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 80+ | 0.89 EUR |
| IPA60R400CEXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.3A; 31W; TO220FP
Kind of package: tube
Technology: CoolMOS™ CE
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220FP
Polarisation: unipolar
On-state resistance: 0.4Ω
Drain current: 10.3A
Gate-source voltage: ±20V
Power dissipation: 31W
Drain-source voltage: 600V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.3A; 31W; TO220FP
Kind of package: tube
Technology: CoolMOS™ CE
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220FP
Polarisation: unipolar
On-state resistance: 0.4Ω
Drain current: 10.3A
Gate-source voltage: ±20V
Power dissipation: 31W
Drain-source voltage: 600V
auf Bestellung 143 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 42+ | 1.73 EUR |
| 46+ | 1.56 EUR |
| 49+ | 1.49 EUR |
| IPA60R600P6XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; 28W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; 28W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 149 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 72+ | 1 EUR |
| 88+ | 0.82 EUR |
| 100+ | 0.72 EUR |
| 104+ | 0.69 EUR |
| IPA60R230P6XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16.8A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16.8A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.23Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16.8A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16.8A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.23Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 264 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 27+ | 2.73 EUR |
| 35+ | 2.1 EUR |
| IPA60R099C7XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 83A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 42nC
Pulsed drain current: 83A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 83A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 42nC
Pulsed drain current: 83A
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 14+ | 5.43 EUR |
| 19+ | 3.78 EUR |
| IPA60R650CEXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 28W; TO220FP
Kind of package: tube
Technology: CoolMOS™ CE
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220FP
Polarisation: unipolar
On-state resistance: 0.65Ω
Drain current: 7A
Gate-source voltage: ±20V
Power dissipation: 28W
Drain-source voltage: 600V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 28W; TO220FP
Kind of package: tube
Technology: CoolMOS™ CE
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220FP
Polarisation: unipolar
On-state resistance: 0.65Ω
Drain current: 7A
Gate-source voltage: ±20V
Power dissipation: 28W
Drain-source voltage: 600V
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 57+ | 1.26 EUR |
| 61+ | 1.17 EUR |
| 70+ | 1.02 EUR |
| IPA60R120P7 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 28W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 28W
Case: TO220FP
On-state resistance: 0.12Ω
Mounting: THT
Kind of channel: enhancement
Technology: CoolMOS™ P7
Kind of package: tube
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 28W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 28W
Case: TO220FP
On-state resistance: 0.12Ω
Mounting: THT
Kind of channel: enhancement
Technology: CoolMOS™ P7
Kind of package: tube
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPA60R280P7 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 24W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 24W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 24W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 24W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPA60R099P7 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 29W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 29W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 29W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 29W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPA60R199CPXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH