Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (126469) > Seite 624 nach 2108
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CY8C6336BZI-BLF03 | Infineon Technologies |
Description: IC MCU 32BIT 512KB FLASH 116BGAPackaging: Tray Package / Case: 116-WFBGA Mounting Type: Surface Mount Speed: 150MHz Program Memory Size: 512KB (512K x 8) RAM Size: 160K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4 Data Converters: A/D 8x12b SAR; D/A 1x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB Peripherals: Bluetooth, Brown-out Detect/Reset, DMA, I2S, LCD, POR, PWM, WDT Supplier Device Package: 116-BGA (5.2x6.4) Number of I/O: 78 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3640 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| CY8C6145LQI-S3F12 | Infineon Technologies |
Description: IC MCU 32BIT 512KB FLASH 68QFNDigiKey Programmable: Not Verified Number of I/O: 53 Supplier Device Package: 68-QFN (8x8) Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, Temp Sensor, WDT Connectivity: eMMC/SD/SDIO, FIFO, I²C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART, USB Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V Core Size: 32-Bit Data Converters: A/D 16x8b, 16x10/12b SAR, Sigma-Delta; D/A 2x7/8b Core Processor: ARM® Cortex®-M4F Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 256K x 8 Program Memory Size: 512KB (512K x 8) Speed: 150MHz Mounting Type: Surface Mount Package / Case: 68-VFQFN Exposed Pad Packaging: Tray |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1300 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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CY8C6136BZI-F34T | Infineon Technologies |
Description: IC MCU 32BIT 512KB FLSH 124FBGANumber of I/O: 100 Supplier Device Package: 124-VFBGA (9x9) Peripherals: Brown-out Detect/Reset, Capsense, DMA, I2S, POR, PWM, WDT Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, PCM, PDM, QSPI, SmartCard, SPI, SSP, UART/USART, USB Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V Core Size: 32-Bit Data Converters: A/D 16x10/12b SAR; D/A 2x7b, 1x12b Sigma-Delta Core Processor: ARM® Cortex®-M4F EEPROM Size: 32K x 8 Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 128K x 8 Program Memory Size: 512KB (512K x 8) Speed: 150MHz Mounting Type: Surface Mount Package / Case: 124-VFBGA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CY8C6316BZI-BLF03T | Infineon Technologies |
Description: IC MCU 32BIT 512KB FLASH 116BGADigiKey Programmable: Not Verified Number of I/O: 78 Supplier Device Package: 116-BGA (5.2x6.4) Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT Connectivity: FIFO, I2C, IrDA, Microwire, SmartCard, SPI, SSP, UART/USART Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V Core Size: 32-Bit Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7b, 1x8/12b Core Processor: ARM® Cortex®-M4F Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 128K x 8 Program Memory Size: 512KB (512K x 8) Speed: 150MHz Mounting Type: Surface Mount Package / Case: 116-WFBGA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IPB45P03P4L11ATMA2 | Infineon Technologies |
Description: MOSFET_(20V 40V) PG-TO263-3Qualification: AEC-Q101 Grade: Automotive Current - Continuous Drain (Id) @ 25°C: 45A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): +5V, -16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PG-TO263-3-2 Vgs(th) (Max) @ Id: 2V @ 85µA Power Dissipation (Max): 58W (Tc) Rds On (Max) @ Id, Vgs: 10.8mOhm @ 45A, 10V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IPB45P03P4L11ATMA1 | Infineon Technologies |
Description: MOSFET P-CH 30V 45A TO263-3Qualification: AEC-Q101 Grade: Automotive Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): +5V, -16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PG-TO263-3-2 Vgs(th) (Max) @ Id: 2V @ 85µA Power Dissipation (Max): 58W (Tc) Rds On (Max) @ Id, Vgs: 10.8mOhm @ 45A, 10V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) FET Type: P-Channel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CY3250-24X23A-POD | Infineon Technologies |
Description: PSOC POD FOR CY8C24X23AAccessory Type: 2 Emulation Pods For Use With/Related Products: CY3215-DK, CY8C24X23A Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TLE9183QKXUMA1 | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 64LQFPPackaging: Cut Tape (CT) Package / Case: 64-LQFP Exposed Pad Mounting Type: Surface Mount Supplier Device Package: PG-LQFP-64-28 Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 3 Gate Type: MOSFET (N-Channel) Grade: Automotive DigiKey Programmable: Not Verified Qualification: AEC-Q101 |
auf Bestellung 881 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE4998P3CHAMA1 | Infineon Technologies |
Description: SENSOR HALL PWM SSO3-10Features: Selectable Scale, Temperature Compensated Packaging: Cut Tape (CT) Package / Case: 3-SSIP, SSO-3-10 Output Type: PWM Mounting Type: Through Hole Axis: Single Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 4.5V ~ 5.5V Bandwidth: Programmable Technology: Hall Effect Resolution: 12 b Sensing Range: ±50mT, ±100mT, ±200mT Current - Output (Max): 5mA Current - Supply (Max): 8mA Supplier Device Package: PG-SSO-3-10 Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 1478 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE4998P3CHAMA1 | Infineon Technologies |
Description: SENSOR HALL PWM SSO3-10Features: Selectable Scale, Temperature Compensated Packaging: Tape & Box (TB) Package / Case: 3-SSIP, SSO-3-10 Output Type: PWM Mounting Type: Through Hole Axis: Single Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 4.5V ~ 5.5V Bandwidth: Programmable Technology: Hall Effect Resolution: 12 b Sensing Range: ±50mT, ±100mT, ±200mT Current - Output (Max): 5mA Current - Supply (Max): 8mA Supplier Device Package: PG-SSO-3-10 Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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DD180N16SHPSA1 | Infineon Technologies |
Description: DIODE MOD GP 1600V 192A MODPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 192A Supplier Device Package: Module Operating Temperature - Junction: -40°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.39 V @ 500 A Current - Reverse Leakage @ Vr: 1 mA @ 1600 V |
auf Bestellung 322 Stücke: Lieferzeit 10-14 Tag (e) |
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DD180N22SHPSA1 | Infineon Technologies |
Description: DIODE MOD GP 2200V 226A BGPB34SBCurrent - Reverse Leakage @ Vr: 1 mA @ 2200 V Voltage - DC Reverse (Vr) (Max): 2200 V Operating Temperature - Junction: -40°C ~ 135°C Supplier Device Package: BG-PB34SB-1 Current - Average Rectified (Io) (per Diode): 226A Diode Configuration: 1 Pair Series Connection Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CY9BF568RBGL-GK7E1 | Infineon Technologies |
Description: IC MCU 32BIT 1.03125MB 144FBGADigiKey Programmable: Not Verified Number of I/O: 100 Supplier Device Package: 144-FBGA (7x7) Peripherals: DMA, LVD, POR, PWM, WDT Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, UART/USART, USB Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Single-Core Data Converters: A/D 24x12b; D/A 2x12b Core Processor: ARM® Cortex®-M4F Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 128K x 8 Program Memory Size: 1.03125MB (1.03125M x 8) Speed: 160MHz Mounting Type: Surface Mount Package / Case: 144-LFBGA Packaging: Tray |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4160 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IPD055N08NF2SATMA1 | Infineon Technologies |
Description: MOSFETPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 98A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 60A, 10V Power Dissipation (Max): 3W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 55µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V |
auf Bestellung 849 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD055N08NF2SATMA1 | Infineon Technologies |
Description: MOSFETPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 98A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 60A, 10V Power Dissipation (Max): 3W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 55µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IPD033N06NATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 90A TO252-3Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 90A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 50µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 30 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IPD033N06NATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 90A TO252-3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 90A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 50µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 30 V |
auf Bestellung 2056 Stücke: Lieferzeit 10-14 Tag (e) |
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| PVR1300NPBF-INF | Infineon Technologies |
Description: TRANSISTOR OUTPUT SSR, 2-CHANNEL Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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CY9BF466LPMC1-G-JNE2 | Infineon Technologies |
Description: IC MCU 32BIT 544KB FLASH 64LQFPPackaging: Tray Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 160MHz Program Memory Size: 544KB (544K x 8) RAM Size: 64K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4F Data Converters: A/D 15x12b; D/A 2x10b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 64-LQFP (10x10) Number of I/O: 48 DigiKey Programmable: Not Verified |
auf Bestellung 960 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C6145AZI-S3F02 | Infineon Technologies |
Description: IC MCU 32BIT 512KB FLASH 100TQFPPackaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 150MHz Program Memory Size: 512KB (512K x 8) RAM Size: 256K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4F Data Converters: A/D 16x8b, 16x10/12b SAR, Sigma-Delta; D/A 2x7/8b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART, USB Peripherals: Brown-out Detect/Reset, DMA, LCD, LVD, POR, PWM, Temp Sensor, WDT Supplier Device Package: 100-TQFP (14x14) Number of I/O: 64 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 900 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRFIZ48NPBF | Infineon Technologies |
Description: MOSFET N-CH 55V 40A TO220AB FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 22A, 10V Power Dissipation (Max): 54W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Full-Pak Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IDH20G120C5XKSA1 | Infineon Technologies |
Description: DIODE SIC 1.2KV 56A PGTO2201Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1050pF @ 1V, 1MHz Current - Average Rectified (Io): 56A Supplier Device Package: PG-TO220-2-1 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A Current - Reverse Leakage @ Vr: 123 µA @ 1200 V |
auf Bestellung 348 Stücke: Lieferzeit 10-14 Tag (e) |
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| MB89535APF-G-1034E1 | Infineon Technologies |
Description: IC MCU 8BIT 16KB MROM 64QFPPackaging: Tray Package / Case: 64-BQFP Mounting Type: Surface Mount Speed: 12.5MHz Program Memory Size: 16KB (16K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: Mask ROM Core Processor: F²MC-8L Data Converters: A/D 8x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V Connectivity: Serial I/O, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 64-QFP (14x20) Number of I/O: 38 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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CY9AF314MPMC-G-MJE1 | Infineon Technologies |
Description: IC MM MCU 64LQFP Packaging: Tray Package / Case: 80-LQFP Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 256KB (256K x 8) RAM Size: 32K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 12x12b SAR Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CSIO, EBI/EMI, I²C, LINbus, SPI, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 80-LQFP (12x12) Number of I/O: 66 DigiKey Programmable: Not Verified |
auf Bestellung 1190 Stücke: Lieferzeit 10-14 Tag (e) |
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CY9BF164LPMC-G-JNE2 | Infineon Technologies |
Description: IC MCU 32BIT 288KB FLASH 64LQFPPackaging: Tray Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 160MHz Program Memory Size: 288KB (288K x 8) RAM Size: 32K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4F Data Converters: A/D 15x12b; D/A 2x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CSIO, I²C, LINbus, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 64-LQFP (12x12) Number of I/O: 48 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1190 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FS400R07A3E3BOMA1 | Infineon Technologies |
Description: IGBT MODULEPackaging: Tray |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 16 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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S29GL01GT12TFN020 | Infineon Technologies |
Description: IC FLASH 1GBIT PARALLEL 56TSOPPackaging: Tray Package / Case: 56-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 56-TSOP Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 120 ns Memory Organization: 128M x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 910 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TLE4988CXTFM28HAMA1 | Infineon Technologies |
Description: SPEED & CURRENT SENSORS PG-SSO-3Features: Programmable, Temperature Compensated Packaging: Tape & Box (TB) Package / Case: 3-SIP Module Output Type: Open Drain Mounting Type: Through Hole Axis: Single Operating Temperature: -40°C ~ 195°C (TJ) Voltage - Supply: 4V ~ 24V Technology: Hall Effect Sensing Range: -15mT ~ 80mT Current - Output (Max): 15mA Current - Supply (Max): 8.8mA Supplier Device Package: PG-SSO-3-52 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CY8C21323-24PVXI | Infineon Technologies |
Description: IC MCU 8BIT 4KB FLASH 20SSOPPackaging: Tube Package / Case: 20-SSOP (0.209", 5.30mm Width) Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 4KB (4K x 8) RAM Size: 256 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: M8C Data Converters: A/D 8x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V Connectivity: I2C, SPI, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 20-SSOP Number of I/O: 16 DigiKey Programmable: Verified |
auf Bestellung 3299 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C28413-24PVXI | Infineon Technologies |
Description: IC MCU 8BIT 16KB FLASH 28SSOPPackaging: Tube Package / Case: 28-SSOP (0.209", 5.30mm Width) Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 16KB (16K x 8) RAM Size: 1K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: M8C Data Converters: A/D 4x14b; D/A 4x9b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V Connectivity: I2C, IrDA, SPI, UART/USART Peripherals: LVD, POR, PWM, WDT Supplier Device Package: 28-SSOP Number of I/O: 24 DigiKey Programmable: Not Verified |
auf Bestellung 673 Stücke: Lieferzeit 10-14 Tag (e) |
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IRS2008MTRPBFXUMA1 | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 14MLPQDigiKey Programmable: Not Verified Current - Peak Output (Source, Sink): 290mA, 600mA Logic Voltage - VIL, VIH: 0.8V, 2.5V Gate Type: IGBT, MOSFET (N-Channel) Number of Drivers: 2 Driven Configuration: Half-Bridge Channel Type: Synchronous Rise / Fall Time (Typ): 70ns, 30ns Supplier Device Package: 14-MLPQ (4x4) High Side Voltage - Max (Bootstrap): 200 V Input Type: Non-Inverting Voltage - Supply: 10V ~ 20V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 14-VFQFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 962 Stücke: Lieferzeit 10-14 Tag (e) |
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AUIRF3805S-7P | Infineon Technologies |
Description: MOSFET N-CH 55V 160A D2PAKPackaging: Tube Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 140A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK (7-Lead) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7820 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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S26HS02GTFPBHB040 | Infineon Technologies |
Description: IC FLASH 2GBIT HYPERBUS 24FBGAPackaging: Tray Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 166 MHz Memory Format: FLASH Supplier Device Package: 24-FBGA (8x8) Memory Interface: HyperBus Memory Organization: 256M x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 520 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRGS14C40LTRLP | Infineon Technologies |
Description: IGBT 430V 20A TO-263ABPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Logic Vce(on) (Max) @ Vge, Ic: 1.75V @ 5V, 14A Supplier Device Package: TO-263AB Td (on/off) @ 25°C: 900ns/6µs Gate Charge: 27 nC Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 430 V Power - Max: 125 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IPQC60R017S7XTMA1 | Infineon Technologies |
Description: MOSFETMounting Type: Surface Mount Package / Case: 22-PowerBSOP Module Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 12V Supplier Device Package: PG-HDSOP-22 Vgs(th) (Max) @ Id: 4.5V @ 1.89mA Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IPQC60R017S7XTMA1 | Infineon Technologies |
Description: MOSFETInput Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 12V Supplier Device Package: PG-HDSOP-22 Vgs(th) (Max) @ Id: 4.5V @ 1.89mA Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 22-PowerBSOP Module Packaging: Cut Tape (CT) |
auf Bestellung 731 Stücke: Lieferzeit 10-14 Tag (e) |
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CYPAS111A1-24LQXQT | Infineon Technologies |
Description: IC OFFLINE SWITCH FLYBACK 24QFNPackaging: Tape & Reel (TR) Package / Case: 24-UFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Frequency - Switching: 20kHz ~ 150kHz Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Supplier Device Package: 24-QFN (4x4) |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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CYPAS111A1-24LQXQT | Infineon Technologies |
Description: IC OFFLINE SWITCH FLYBACK 24QFNPackaging: Cut Tape (CT) Package / Case: 24-UFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Frequency - Switching: 20kHz ~ 150kHz Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Supplier Device Package: 24-QFN (4x4) |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| IDP2308T1XUMA1 | Infineon Technologies |
Description: AC/DC DIGITAL PLATFORM Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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IR2130JTRPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 44PLCCPackaging: Cut Tape (CT) Package / Case: 44-LCC (J-Lead), 32 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58) Rise / Fall Time (Typ): 80ns, 35ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.2V Current - Peak Output (Source, Sink): 250mA, 500mA DigiKey Programmable: Not Verified |
auf Bestellung 398 Stücke: Lieferzeit 10-14 Tag (e) |
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| MC74F32D | Infineon Technologies |
Description: GATF/FASERIE4-FUN2-INPUTTPDSO14 Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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CYW55571MIWBGT | Infineon Technologies |
Description: RF TXRX MODULE BLUETOOTH WIFI Packaging: Tape & Reel (TR) Frequency: 2.4GHz, 5GHz, 6GHz Operating Temperature: -40°C ~ 85°C Data Rate: 1.2Gbps Protocol: Bluetooth v5.2 Antenna Type: Antenna Not Included Utilized IC / Part: CYW55573 Modulation: 1024-QAM RF Family/Standard: Bluetooth, WiFi Serial Interfaces: I2C, I2S, JTAG, PCM, UART |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CYW55571MIWBGT | Infineon Technologies |
Description: RF TXRX MODULE BLUETOOTH WIFI Packaging: Cut Tape (CT) Frequency: 2.4GHz, 5GHz, 6GHz Operating Temperature: -40°C ~ 85°C Data Rate: 1.2Gbps Protocol: Bluetooth v5.2 Antenna Type: Antenna Not Included Utilized IC / Part: CYW55573 Modulation: 1024-QAM RF Family/Standard: Bluetooth, WiFi Serial Interfaces: I2C, I2S, JTAG, PCM, UART |
auf Bestellung 4981 Stücke: Lieferzeit 10-14 Tag (e) |
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| CYW55573MIWBGT | Infineon Technologies |
Description: RF TXRX MODULE BLUETOOTH WIFI Serial Interfaces: I2C, I2S, JTAG, PCM, UART RF Family/Standard: Bluetooth, WiFi Modulation: 1024-QAM Utilized IC / Part: CYW55573 Antenna Type: Antenna Not Included Protocol: Bluetooth v5.2 Data Rate: 1.2Gbps Operating Temperature: -40°C ~ 85°C Frequency: 2.4GHz, 5GHz, 6GHz Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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CYW55573MIFFBG | Infineon Technologies |
Description: RF TXRX MODULE WIFIPackaging: Tray |
auf Bestellung 1176 Stücke: Lieferzeit 10-14 Tag (e) |
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CYBLE-014008-EVAL | Infineon Technologies |
Description: DEVELOPMENT KIT CYBLE-014008Packaging: Bulk For Use With/Related Products: EZ-BLE™ PSoC® Frequency: 2.4GHz Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE) Supplied Contents: Board(s) |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF9Z34NSTRRPBF | Infineon Technologies |
Description: MOSFET P-CH 55V 19A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V Power Dissipation (Max): 3.8W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CY8C4146LQS-S433T | Infineon Technologies |
Description: IC MCU 32BIT 64KB FLASH 40UFQFNNumber of I/O: 34 Supplier Device Package: 40-QFN (6x6) Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b Core Processor: ARM® Cortex®-M0+ Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 8K x 8 Program Memory Size: 64KB (64K x 8) Speed: 48MHz Mounting Type: Surface Mount Package / Case: 40-UFQFN Exposed Pad Packaging: Tape & Reel (TR) Qualification: AEC-Q100 Grade: Automotive |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C4146LQS-S433T | Infineon Technologies |
Description: IC MCU 32BIT 64KB FLASH 40UFQFNProgram Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 8K x 8 Program Memory Size: 64KB (64K x 8) Speed: 48MHz Mounting Type: Surface Mount Package / Case: 40-UFQFN Exposed Pad Packaging: Cut Tape (CT) Number of I/O: 34 Supplier Device Package: 40-QFN (6x6) Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b Core Processor: ARM® Cortex®-M0+ Qualification: AEC-Q100 Grade: Automotive |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C4125PVS-S432 | Infineon Technologies |
Description: IC MCU 32BIT 32KB FLASH 28SSOPNumber of I/O: 24 Supplier Device Package: 28-SSOP Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b Core Processor: ARM® Cortex®-M0+ Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 4K x 8 Speed: 24MHz Mounting Type: Surface Mount Package / Case: 28-SSOP (0.209", 5.30mm Width) Packaging: Tube Qualification: AEC-Q100 Grade: Automotive Program Memory Size: 32KB (32K x 8) |
auf Bestellung 2330 Stücke: Lieferzeit 10-14 Tag (e) |
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S6E2H14E0AGV20000 | Infineon Technologies |
Description: IC MCU 32BIT 288KB FLASH 80LQFPPackaging: Tray Package / Case: 80-LQFP Mounting Type: Surface Mount Speed: 160MHz Program Memory Size: 288KB (288K x 8) RAM Size: 32K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4F Data Converters: A/D 16x12b; D/A 2x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 80-LQFP (12x12) Number of I/O: 63 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1190 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| S6E2H16E0AGV2000M | Infineon Technologies |
Description: MULTI-MARKET MCUSPackaging: Tray Number of I/O: 63 Supplier Device Package: 80-LQFP (12x12) Peripherals: DMA, LVD, POR, PWM, WDT Connectivity: CSIO, EBI/EMI, I²C, LINbus, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 16x12b SAR; D/A 2x12b Core Processor: ARM® Cortex®-M4F Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 125°C (TJ) RAM Size: 64K x 8 Program Memory Size: 544KB (544K x 8) Speed: 160MHz Mounting Type: Surface Mount Package / Case: 80-LQFP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1190 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| S6E2H46E0AGV2000M | Infineon Technologies |
Description: MULTI-MARKET MCUSPackage / Case: 80-LQFP Packaging: Tray Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 16x12b SAR; D/A 2x12b Core Processor: ARM® Cortex®-M4F Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 64K x 8 Program Memory Size: 544KB (544K x 8) Speed: 160MHz Mounting Type: Surface Mount Number of I/O: 63 Supplier Device Package: 80-LQFP (12x12) Peripherals: DMA, LVD, POR, PWM, WDT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1190 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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S6E2H44F0AGV2000M | Infineon Technologies |
Description: IC MCU 32BIT 288KB FLASH 100LQFPPackaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 160MHz Program Memory Size: 288KB (288K x 8) RAM Size: 32K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4F Data Converters: A/D 24x12b; D/A 2x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 100-LQFP (14x14) Number of I/O: 80 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 900 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BCR116E6433HTMA1 | Infineon Technologies |
Description: TRANS PREBIAS NPN 50V SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SOT23 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BCR116SH6327XTSA1 | Infineon Technologies |
Description: TRANS 2NPN PREBIAS 0.25W SOT363Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Frequency - Transition: 150MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: PG-SOT363-PO |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 18000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BCR116WH6327XTSA1 | Infineon Technologies |
Description: TRANS PREBIAS NPN 50V SOT323Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SOT323 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| CYAT82687-100AA39 | Infineon Technologies |
Description: PSOC BASED - TRUETOUCHPackaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Interface: I²C Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V Supplier Device Package: 100-TQFP (14x14) Touchscreen: 2 Wire Capacitive |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 900 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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BCR523E6433HTMA1 | Infineon Technologies |
Description: TRANS PREBIAS NPN 50V SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Supplier Device Package: PG-SOT23 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 330 mW Frequency - Transition: 100 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BCR553E6327HTSA1 | Infineon Technologies |
Description: TRANS PREBIAS PNP 50V SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V Supplier Device Package: PG-SOT23 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 330 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms Resistors Included: R1 and R2 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 18000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| CY8C6336BZI-BLF03 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 116BGA
Packaging: Tray
Package / Case: 116-WFBGA
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 160K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 8x12b SAR; D/A 1x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB
Peripherals: Bluetooth, Brown-out Detect/Reset, DMA, I2S, LCD, POR, PWM, WDT
Supplier Device Package: 116-BGA (5.2x6.4)
Number of I/O: 78
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 512KB FLASH 116BGA
Packaging: Tray
Package / Case: 116-WFBGA
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 160K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 8x12b SAR; D/A 1x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB
Peripherals: Bluetooth, Brown-out Detect/Reset, DMA, I2S, LCD, POR, PWM, WDT
Supplier Device Package: 116-BGA (5.2x6.4)
Number of I/O: 78
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 3640 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY8C6145LQI-S3F12 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 68QFN
DigiKey Programmable: Not Verified
Number of I/O: 53
Supplier Device Package: 68-QFN (8x8)
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, Temp Sensor, WDT
Connectivity: eMMC/SD/SDIO, FIFO, I²C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Core Size: 32-Bit
Data Converters: A/D 16x8b, 16x10/12b SAR, Sigma-Delta; D/A 2x7/8b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 256K x 8
Program Memory Size: 512KB (512K x 8)
Speed: 150MHz
Mounting Type: Surface Mount
Package / Case: 68-VFQFN Exposed Pad
Packaging: Tray
Description: IC MCU 32BIT 512KB FLASH 68QFN
DigiKey Programmable: Not Verified
Number of I/O: 53
Supplier Device Package: 68-QFN (8x8)
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, Temp Sensor, WDT
Connectivity: eMMC/SD/SDIO, FIFO, I²C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Core Size: 32-Bit
Data Converters: A/D 16x8b, 16x10/12b SAR, Sigma-Delta; D/A 2x7/8b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 256K x 8
Program Memory Size: 512KB (512K x 8)
Speed: 150MHz
Mounting Type: Surface Mount
Package / Case: 68-VFQFN Exposed Pad
Packaging: Tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 1300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY8C6136BZI-F34T |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 512KB FLSH 124FBGA
Number of I/O: 100
Supplier Device Package: 124-VFBGA (9x9)
Peripherals: Brown-out Detect/Reset, Capsense, DMA, I2S, POR, PWM, WDT
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, PCM, PDM, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Core Size: 32-Bit
Data Converters: A/D 16x10/12b SAR; D/A 2x7b, 1x12b Sigma-Delta
Core Processor: ARM® Cortex®-M4F
EEPROM Size: 32K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 128K x 8
Program Memory Size: 512KB (512K x 8)
Speed: 150MHz
Mounting Type: Surface Mount
Package / Case: 124-VFBGA
Packaging: Tape & Reel (TR)
Description: IC MCU 32BIT 512KB FLSH 124FBGA
Number of I/O: 100
Supplier Device Package: 124-VFBGA (9x9)
Peripherals: Brown-out Detect/Reset, Capsense, DMA, I2S, POR, PWM, WDT
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, PCM, PDM, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Core Size: 32-Bit
Data Converters: A/D 16x10/12b SAR; D/A 2x7b, 1x12b Sigma-Delta
Core Processor: ARM® Cortex®-M4F
EEPROM Size: 32K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 128K x 8
Program Memory Size: 512KB (512K x 8)
Speed: 150MHz
Mounting Type: Surface Mount
Package / Case: 124-VFBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| CY8C6316BZI-BLF03T |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 116BGA
DigiKey Programmable: Not Verified
Number of I/O: 78
Supplier Device Package: 116-BGA (5.2x6.4)
Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT
Connectivity: FIFO, I2C, IrDA, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Core Size: 32-Bit
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7b, 1x8/12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 128K x 8
Program Memory Size: 512KB (512K x 8)
Speed: 150MHz
Mounting Type: Surface Mount
Package / Case: 116-WFBGA
Packaging: Tape & Reel (TR)
Description: IC MCU 32BIT 512KB FLASH 116BGA
DigiKey Programmable: Not Verified
Number of I/O: 78
Supplier Device Package: 116-BGA (5.2x6.4)
Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT
Connectivity: FIFO, I2C, IrDA, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Core Size: 32-Bit
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7b, 1x8/12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 128K x 8
Program Memory Size: 512KB (512K x 8)
Speed: 150MHz
Mounting Type: Surface Mount
Package / Case: 116-WFBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| IPB45P03P4L11ATMA2 |
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Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V) PG-TO263-3
Qualification: AEC-Q101
Grade: Automotive
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +5V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 2V @ 85µA
Power Dissipation (Max): 58W (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 45A, 10V
Description: MOSFET_(20V 40V) PG-TO263-3
Qualification: AEC-Q101
Grade: Automotive
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +5V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 2V @ 85µA
Power Dissipation (Max): 58W (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 45A, 10V
Produkt ist nicht verfügbar
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| IPB45P03P4L11ATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 45A TO263-3
Qualification: AEC-Q101
Grade: Automotive
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +5V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 2V @ 85µA
Power Dissipation (Max): 58W (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: P-Channel
Description: MOSFET P-CH 30V 45A TO263-3
Qualification: AEC-Q101
Grade: Automotive
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +5V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 2V @ 85µA
Power Dissipation (Max): 58W (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: P-Channel
Produkt ist nicht verfügbar
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| CY3250-24X23A-POD |
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Hersteller: Infineon Technologies
Description: PSOC POD FOR CY8C24X23A
Accessory Type: 2 Emulation Pods
For Use With/Related Products: CY3215-DK, CY8C24X23A
Packaging: Bulk
Description: PSOC POD FOR CY8C24X23A
Accessory Type: 2 Emulation Pods
For Use With/Related Products: CY3215-DK, CY8C24X23A
Packaging: Bulk
Produkt ist nicht verfügbar
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| TLE9183QKXUMA1 |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: PG-LQFP-64-28
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 3
Gate Type: MOSFET (N-Channel)
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q101
Description: IC GATE DRVR HALF-BRIDGE 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: PG-LQFP-64-28
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 3
Gate Type: MOSFET (N-Channel)
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q101
auf Bestellung 881 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.02 EUR |
| 10+ | 9.23 EUR |
| 25+ | 8.54 EUR |
| 100+ | 7.78 EUR |
| 250+ | 7.52 EUR |
| TLE4998P3CHAMA1 |
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Hersteller: Infineon Technologies
Description: SENSOR HALL PWM SSO3-10
Features: Selectable Scale, Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 3-SSIP, SSO-3-10
Output Type: PWM
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Bandwidth: Programmable
Technology: Hall Effect
Resolution: 12 b
Sensing Range: ±50mT, ±100mT, ±200mT
Current - Output (Max): 5mA
Current - Supply (Max): 8mA
Supplier Device Package: PG-SSO-3-10
Grade: Automotive
Qualification: AEC-Q100
Description: SENSOR HALL PWM SSO3-10
Features: Selectable Scale, Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 3-SSIP, SSO-3-10
Output Type: PWM
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Bandwidth: Programmable
Technology: Hall Effect
Resolution: 12 b
Sensing Range: ±50mT, ±100mT, ±200mT
Current - Output (Max): 5mA
Current - Supply (Max): 8mA
Supplier Device Package: PG-SSO-3-10
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1478 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 10.34 EUR |
| 10+ | 7.77 EUR |
| 25+ | 6.9 EUR |
| 50+ | 6.56 EUR |
| 100+ | 6.39 EUR |
| 500+ | 5.36 EUR |
| TLE4998P3CHAMA1 |
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Hersteller: Infineon Technologies
Description: SENSOR HALL PWM SSO3-10
Features: Selectable Scale, Temperature Compensated
Packaging: Tape & Box (TB)
Package / Case: 3-SSIP, SSO-3-10
Output Type: PWM
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Bandwidth: Programmable
Technology: Hall Effect
Resolution: 12 b
Sensing Range: ±50mT, ±100mT, ±200mT
Current - Output (Max): 5mA
Current - Supply (Max): 8mA
Supplier Device Package: PG-SSO-3-10
Grade: Automotive
Qualification: AEC-Q100
Description: SENSOR HALL PWM SSO3-10
Features: Selectable Scale, Temperature Compensated
Packaging: Tape & Box (TB)
Package / Case: 3-SSIP, SSO-3-10
Output Type: PWM
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Bandwidth: Programmable
Technology: Hall Effect
Resolution: 12 b
Sensing Range: ±50mT, ±100mT, ±200mT
Current - Output (Max): 5mA
Current - Supply (Max): 8mA
Supplier Device Package: PG-SSO-3-10
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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| DD180N16SHPSA1 |
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Hersteller: Infineon Technologies
Description: DIODE MOD GP 1600V 192A MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 192A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.39 V @ 500 A
Current - Reverse Leakage @ Vr: 1 mA @ 1600 V
Description: DIODE MOD GP 1600V 192A MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 192A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.39 V @ 500 A
Current - Reverse Leakage @ Vr: 1 mA @ 1600 V
auf Bestellung 322 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 83.55 EUR |
| DD180N22SHPSA1 |
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Hersteller: Infineon Technologies
Description: DIODE MOD GP 2200V 226A BGPB34SB
Current - Reverse Leakage @ Vr: 1 mA @ 2200 V
Voltage - DC Reverse (Vr) (Max): 2200 V
Operating Temperature - Junction: -40°C ~ 135°C
Supplier Device Package: BG-PB34SB-1
Current - Average Rectified (Io) (per Diode): 226A
Diode Configuration: 1 Pair Series Connection
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Description: DIODE MOD GP 2200V 226A BGPB34SB
Current - Reverse Leakage @ Vr: 1 mA @ 2200 V
Voltage - DC Reverse (Vr) (Max): 2200 V
Operating Temperature - Junction: -40°C ~ 135°C
Supplier Device Package: BG-PB34SB-1
Current - Average Rectified (Io) (per Diode): 226A
Diode Configuration: 1 Pair Series Connection
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Produkt ist nicht verfügbar
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| CY9BF568RBGL-GK7E1 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1.03125MB 144FBGA
DigiKey Programmable: Not Verified
Number of I/O: 100
Supplier Device Package: 144-FBGA (7x7)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 128K x 8
Program Memory Size: 1.03125MB (1.03125M x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 144-LFBGA
Packaging: Tray
Description: IC MCU 32BIT 1.03125MB 144FBGA
DigiKey Programmable: Not Verified
Number of I/O: 100
Supplier Device Package: 144-FBGA (7x7)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 128K x 8
Program Memory Size: 1.03125MB (1.03125M x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 144-LFBGA
Packaging: Tray
Produkt ist nicht verfügbar
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| IPD055N08NF2SATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 60A, 10V
Power Dissipation (Max): 3W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 55µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 60A, 10V
Power Dissipation (Max): 3W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 55µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V
auf Bestellung 849 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 4 EUR |
| 10+ | 2.55 EUR |
| 50+ | 1.93 EUR |
| 100+ | 1.73 EUR |
| 500+ | 1.37 EUR |
| IPD055N08NF2SATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 60A, 10V
Power Dissipation (Max): 3W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 55µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 98A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 60A, 10V
Power Dissipation (Max): 3W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 55µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V
Produkt ist nicht verfügbar
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| IPD033N06NATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 90A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 30 V
Description: MOSFET N-CH 60V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 90A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 30 V
Produkt ist nicht verfügbar
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| IPD033N06NATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 90A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 30 V
Description: MOSFET N-CH 60V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 90A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 30 V
auf Bestellung 2056 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.63 EUR |
| 10+ | 3.64 EUR |
| 100+ | 2.51 EUR |
| 500+ | 2.03 EUR |
| 1000+ | 1.88 EUR |
| CY9BF466LPMC1-G-JNE2 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 544KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 15x12b; D/A 2x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 48
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 544KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 15x12b; D/A 2x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 48
DigiKey Programmable: Not Verified
auf Bestellung 960 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 14.2 EUR |
| 10+ | 11.04 EUR |
| 25+ | 10.26 EUR |
| 160+ | 9.17 EUR |
| 320+ | 9.14 EUR |
| CY8C6145AZI-S3F02 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x8b, 16x10/12b SAR, Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 64
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 512KB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x8b, 16x10/12b SAR, Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 64
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 900 Stücke
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| IRFIZ48NPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 40A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 22A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB Full-Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Description: MOSFET N-CH 55V 40A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 22A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB Full-Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IDH20G120C5XKSA1 |
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Hersteller: Infineon Technologies
Description: DIODE SIC 1.2KV 56A PGTO2201
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1050pF @ 1V, 1MHz
Current - Average Rectified (Io): 56A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 123 µA @ 1200 V
Description: DIODE SIC 1.2KV 56A PGTO2201
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1050pF @ 1V, 1MHz
Current - Average Rectified (Io): 56A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 123 µA @ 1200 V
auf Bestellung 348 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 15.65 EUR |
| 50+ | 8.47 EUR |
| 100+ | 7.78 EUR |
| MB89535APF-G-1034E1 |
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Hersteller: Infineon Technologies
Description: IC MCU 8BIT 16KB MROM 64QFP
Packaging: Tray
Package / Case: 64-BQFP
Mounting Type: Surface Mount
Speed: 12.5MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: Serial I/O, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 64-QFP (14x20)
Number of I/O: 38
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 16KB MROM 64QFP
Packaging: Tray
Package / Case: 64-BQFP
Mounting Type: Surface Mount
Speed: 12.5MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: Serial I/O, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 64-QFP (14x20)
Number of I/O: 38
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
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| CY9AF314MPMC-G-MJE1 |
Hersteller: Infineon Technologies
Description: IC MM MCU 64LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 66
DigiKey Programmable: Not Verified
Description: IC MM MCU 64LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 66
DigiKey Programmable: Not Verified
auf Bestellung 1190 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 20.67 EUR |
| 10+ | 18.67 EUR |
| 25+ | 17.8 EUR |
| 119+ | 15.46 EUR |
| 238+ | 14.77 EUR |
| 476+ | 13.46 EUR |
| 952+ | 11.72 EUR |
| CY9BF164LPMC-G-JNE2 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 15x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (12x12)
Number of I/O: 48
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 288KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 15x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I²C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (12x12)
Number of I/O: 48
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1190 Stücke
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| FS400R07A3E3BOMA1 |
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Produkt ist nicht verfügbar
Mindestbestellmenge: 16 Stücke
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| S29GL01GT12TFN020 |
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Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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| TLE4988CXTFM28HAMA1 |
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Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS PG-SSO-3
Features: Programmable, Temperature Compensated
Packaging: Tape & Box (TB)
Package / Case: 3-SIP Module
Output Type: Open Drain
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 195°C (TJ)
Voltage - Supply: 4V ~ 24V
Technology: Hall Effect
Sensing Range: -15mT ~ 80mT
Current - Output (Max): 15mA
Current - Supply (Max): 8.8mA
Supplier Device Package: PG-SSO-3-52
Description: SPEED & CURRENT SENSORS PG-SSO-3
Features: Programmable, Temperature Compensated
Packaging: Tape & Box (TB)
Package / Case: 3-SIP Module
Output Type: Open Drain
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 195°C (TJ)
Voltage - Supply: 4V ~ 24V
Technology: Hall Effect
Sensing Range: -15mT ~ 80mT
Current - Output (Max): 15mA
Current - Supply (Max): 8.8mA
Supplier Device Package: PG-SSO-3-52
Produkt ist nicht verfügbar
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| CY8C21323-24PVXI |
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Hersteller: Infineon Technologies
Description: IC MCU 8BIT 4KB FLASH 20SSOP
Packaging: Tube
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 8x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 20-SSOP
Number of I/O: 16
DigiKey Programmable: Verified
Description: IC MCU 8BIT 4KB FLASH 20SSOP
Packaging: Tube
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 8x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 20-SSOP
Number of I/O: 16
DigiKey Programmable: Verified
auf Bestellung 3299 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.58 EUR |
| 10+ | 5.75 EUR |
| 66+ | 4.91 EUR |
| 132+ | 4.71 EUR |
| 264+ | 4.53 EUR |
| 528+ | 4.39 EUR |
| 1056+ | 4.27 EUR |
| 2508+ | 4.15 EUR |
| CY8C28413-24PVXI |
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Hersteller: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 16KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Not Verified
auf Bestellung 673 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 14.8 EUR |
| 10+ | 11.46 EUR |
| 47+ | 10.15 EUR |
| 141+ | 9.52 EUR |
| 282+ | 9.2 EUR |
| 517+ | 8.97 EUR |
| IRS2008MTRPBFXUMA1 |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14MLPQ
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 290mA, 600mA
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 70ns, 30ns
Supplier Device Package: 14-MLPQ (4x4)
High Side Voltage - Max (Bootstrap): 200 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 14-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC GATE DRVR HALF-BRIDGE 14MLPQ
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 290mA, 600mA
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 70ns, 30ns
Supplier Device Package: 14-MLPQ (4x4)
High Side Voltage - Max (Bootstrap): 200 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 14-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 962 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.88 EUR |
| 16+ | 1.36 EUR |
| 25+ | 1.23 EUR |
| 100+ | 1.08 EUR |
| 250+ | 1.01 EUR |
| 500+ | 0.96 EUR |
| AUIRF3805S-7P |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 160A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 140A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7820 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 160A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 140A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7820 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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| S26HS02GTFPBHB040 |
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Hersteller: Infineon Technologies
Description: IC FLASH 2GBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (8x8)
Memory Interface: HyperBus
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 2GBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (8x8)
Memory Interface: HyperBus
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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| IRGS14C40LTRLP |
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Hersteller: Infineon Technologies
Description: IGBT 430V 20A TO-263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.75V @ 5V, 14A
Supplier Device Package: TO-263AB
Td (on/off) @ 25°C: 900ns/6µs
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 430 V
Power - Max: 125 W
Description: IGBT 430V 20A TO-263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.75V @ 5V, 14A
Supplier Device Package: TO-263AB
Td (on/off) @ 25°C: 900ns/6µs
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 430 V
Power - Max: 125 W
Produkt ist nicht verfügbar
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| IPQC60R017S7XTMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET
Mounting Type: Surface Mount
Package / Case: 22-PowerBSOP Module
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: PG-HDSOP-22
Vgs(th) (Max) @ Id: 4.5V @ 1.89mA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Description: MOSFET
Mounting Type: Surface Mount
Package / Case: 22-PowerBSOP Module
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: PG-HDSOP-22
Vgs(th) (Max) @ Id: 4.5V @ 1.89mA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
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| IPQC60R017S7XTMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: PG-HDSOP-22
Vgs(th) (Max) @ Id: 4.5V @ 1.89mA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 22-PowerBSOP Module
Packaging: Cut Tape (CT)
Description: MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: PG-HDSOP-22
Vgs(th) (Max) @ Id: 4.5V @ 1.89mA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 22-PowerBSOP Module
Packaging: Cut Tape (CT)
auf Bestellung 731 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 24.94 EUR |
| 10+ | 21.91 EUR |
| 100+ | 18.49 EUR |
| CYPAS111A1-24LQXQT |
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Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Frequency - Switching: 20kHz ~ 150kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Supplier Device Package: 24-QFN (4x4)
Description: IC OFFLINE SWITCH FLYBACK 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Frequency - Switching: 20kHz ~ 150kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Supplier Device Package: 24-QFN (4x4)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 2.95 EUR |
| CYPAS111A1-24LQXQT |
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Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Frequency - Switching: 20kHz ~ 150kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Supplier Device Package: 24-QFN (4x4)
Description: IC OFFLINE SWITCH FLYBACK 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Frequency - Switching: 20kHz ~ 150kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Supplier Device Package: 24-QFN (4x4)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.12 EUR |
| 10+ | 4.57 EUR |
| 25+ | 4.19 EUR |
| 100+ | 3.77 EUR |
| 250+ | 3.57 EUR |
| 500+ | 3.44 EUR |
| 1000+ | 3.34 EUR |
| IDP2308T1XUMA1 |
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| IR2130JTRPBF |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Cut Tape (CT)
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Cut Tape (CT)
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
auf Bestellung 398 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 14.53 EUR |
| 10+ | 11.23 EUR |
| 25+ | 10.41 EUR |
| 100+ | 9.51 EUR |
| 250+ | 9.27 EUR |
| CYW55571MIWBGT |
Hersteller: Infineon Technologies
Description: RF TXRX MODULE BLUETOOTH WIFI
Packaging: Tape & Reel (TR)
Frequency: 2.4GHz, 5GHz, 6GHz
Operating Temperature: -40°C ~ 85°C
Data Rate: 1.2Gbps
Protocol: Bluetooth v5.2
Antenna Type: Antenna Not Included
Utilized IC / Part: CYW55573
Modulation: 1024-QAM
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, I2S, JTAG, PCM, UART
Description: RF TXRX MODULE BLUETOOTH WIFI
Packaging: Tape & Reel (TR)
Frequency: 2.4GHz, 5GHz, 6GHz
Operating Temperature: -40°C ~ 85°C
Data Rate: 1.2Gbps
Protocol: Bluetooth v5.2
Antenna Type: Antenna Not Included
Utilized IC / Part: CYW55573
Modulation: 1024-QAM
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, I2S, JTAG, PCM, UART
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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| CYW55571MIWBGT |
Hersteller: Infineon Technologies
Description: RF TXRX MODULE BLUETOOTH WIFI
Packaging: Cut Tape (CT)
Frequency: 2.4GHz, 5GHz, 6GHz
Operating Temperature: -40°C ~ 85°C
Data Rate: 1.2Gbps
Protocol: Bluetooth v5.2
Antenna Type: Antenna Not Included
Utilized IC / Part: CYW55573
Modulation: 1024-QAM
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, I2S, JTAG, PCM, UART
Description: RF TXRX MODULE BLUETOOTH WIFI
Packaging: Cut Tape (CT)
Frequency: 2.4GHz, 5GHz, 6GHz
Operating Temperature: -40°C ~ 85°C
Data Rate: 1.2Gbps
Protocol: Bluetooth v5.2
Antenna Type: Antenna Not Included
Utilized IC / Part: CYW55573
Modulation: 1024-QAM
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, I2S, JTAG, PCM, UART
auf Bestellung 4981 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 25.28 EUR |
| 10+ | 21.98 EUR |
| 25+ | 20.84 EUR |
| 100+ | 19.27 EUR |
| 250+ | 18.33 EUR |
| 500+ | 17.67 EUR |
| 1000+ | 17.04 EUR |
| CYW55573MIWBGT |
Hersteller: Infineon Technologies
Description: RF TXRX MODULE BLUETOOTH WIFI
Serial Interfaces: I2C, I2S, JTAG, PCM, UART
RF Family/Standard: Bluetooth, WiFi
Modulation: 1024-QAM
Utilized IC / Part: CYW55573
Antenna Type: Antenna Not Included
Protocol: Bluetooth v5.2
Data Rate: 1.2Gbps
Operating Temperature: -40°C ~ 85°C
Frequency: 2.4GHz, 5GHz, 6GHz
Packaging: Tape & Reel (TR)
Description: RF TXRX MODULE BLUETOOTH WIFI
Serial Interfaces: I2C, I2S, JTAG, PCM, UART
RF Family/Standard: Bluetooth, WiFi
Modulation: 1024-QAM
Utilized IC / Part: CYW55573
Antenna Type: Antenna Not Included
Protocol: Bluetooth v5.2
Data Rate: 1.2Gbps
Operating Temperature: -40°C ~ 85°C
Frequency: 2.4GHz, 5GHz, 6GHz
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
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| CYW55573MIFFBG |
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auf Bestellung 1176 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 39.04 EUR |
| 10+ | 30.57 EUR |
| 25+ | 28.1 EUR |
| 80+ | 25.51 EUR |
| 230+ | 23.63 EUR |
| 440+ | 22.67 EUR |
| CYBLE-014008-EVAL |
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Hersteller: Infineon Technologies
Description: DEVELOPMENT KIT CYBLE-014008
Packaging: Bulk
For Use With/Related Products: EZ-BLE™ PSoC®
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Supplied Contents: Board(s)
Description: DEVELOPMENT KIT CYBLE-014008
Packaging: Bulk
For Use With/Related Products: EZ-BLE™ PSoC®
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Supplied Contents: Board(s)
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 40.4 EUR |
| IRF9Z34NSTRRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET P-CH 55V 19A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Description: MOSFET P-CH 55V 19A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY8C4146LQS-S433T |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 40UFQFN
Number of I/O: 34
Supplier Device Package: 40-QFN (6x6)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 8K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 40-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Description: IC MCU 32BIT 64KB FLASH 40UFQFN
Number of I/O: 34
Supplier Device Package: 40-QFN (6x6)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 8K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 40-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 6.31 EUR |
| CY8C4146LQS-S433T |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 40UFQFN
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 8K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 40-UFQFN Exposed Pad
Packaging: Cut Tape (CT)
Number of I/O: 34
Supplier Device Package: 40-QFN (6x6)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Processor: ARM® Cortex®-M0+
Qualification: AEC-Q100
Grade: Automotive
Description: IC MCU 32BIT 64KB FLASH 40UFQFN
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 8K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 40-UFQFN Exposed Pad
Packaging: Cut Tape (CT)
Number of I/O: 34
Supplier Device Package: 40-QFN (6x6)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Processor: ARM® Cortex®-M0+
Qualification: AEC-Q100
Grade: Automotive
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.94 EUR |
| 10+ | 9.19 EUR |
| 25+ | 8.5 EUR |
| 100+ | 7.75 EUR |
| 250+ | 7.38 EUR |
| 500+ | 7.16 EUR |
| 1000+ | 6.99 EUR |
| CY8C4125PVS-S432 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 28SSOP
Number of I/O: 24
Supplier Device Package: 28-SSOP
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 4K x 8
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Packaging: Tube
Qualification: AEC-Q100
Grade: Automotive
Program Memory Size: 32KB (32K x 8)
Description: IC MCU 32BIT 32KB FLASH 28SSOP
Number of I/O: 24
Supplier Device Package: 28-SSOP
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 4K x 8
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Packaging: Tube
Qualification: AEC-Q100
Grade: Automotive
Program Memory Size: 32KB (32K x 8)
auf Bestellung 2330 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 10.39 EUR |
| 10+ | 7.96 EUR |
| 47+ | 7.01 EUR |
| 141+ | 6.54 EUR |
| 282+ | 6.32 EUR |
| 517+ | 6.15 EUR |
| 1034+ | 6 EUR |
| S6E2H14E0AGV20000 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 63
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 288KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 63
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1190 Stücke
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Stück im Wert von UAH
| S6E2H16E0AGV2000M |
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Hersteller: Infineon Technologies
Description: MULTI-MARKET MCUS
Packaging: Tray
Number of I/O: 63
Supplier Device Package: 80-LQFP (12x12)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I²C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b SAR; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 125°C (TJ)
RAM Size: 64K x 8
Program Memory Size: 544KB (544K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Description: MULTI-MARKET MCUS
Packaging: Tray
Number of I/O: 63
Supplier Device Package: 80-LQFP (12x12)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I²C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b SAR; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 125°C (TJ)
RAM Size: 64K x 8
Program Memory Size: 544KB (544K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 80-LQFP
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| S6E2H46E0AGV2000M |
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Hersteller: Infineon Technologies
Description: MULTI-MARKET MCUS
Package / Case: 80-LQFP
Packaging: Tray
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b SAR; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 64K x 8
Program Memory Size: 544KB (544K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Number of I/O: 63
Supplier Device Package: 80-LQFP (12x12)
Peripherals: DMA, LVD, POR, PWM, WDT
Description: MULTI-MARKET MCUS
Package / Case: 80-LQFP
Packaging: Tray
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b SAR; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 64K x 8
Program Memory Size: 544KB (544K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Number of I/O: 63
Supplier Device Package: 80-LQFP (12x12)
Peripherals: DMA, LVD, POR, PWM, WDT
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| S6E2H44F0AGV2000M |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 80
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 288KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 80
DigiKey Programmable: Not Verified
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| BCR116E6433HTMA1 |
![]() |
Hersteller: Infineon Technologies
Description: TRANS PREBIAS NPN 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS NPN 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
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| BCR116SH6327XTSA1 |
![]() |
Hersteller: Infineon Technologies
Description: TRANS 2NPN PREBIAS 0.25W SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Frequency - Transition: 150MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: PG-SOT363-PO
Description: TRANS 2NPN PREBIAS 0.25W SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Frequency - Transition: 150MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: PG-SOT363-PO
Produkt ist nicht verfügbar
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| BCR116WH6327XTSA1 |
![]() |
Hersteller: Infineon Technologies
Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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| CYAT82687-100AA39 |
![]() |
Hersteller: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I²C
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I²C
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Produkt ist nicht verfügbar
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| BCR523E6433HTMA1 |
![]() |
Hersteller: Infineon Technologies
Description: TRANS PREBIAS NPN 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 100 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Description: TRANS PREBIAS NPN 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 100 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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| BCR553E6327HTSA1 |
![]() |
Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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