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BCR573E6327HTSA1 BCR573E6327HTSA1 Infineon Technologies bcr573.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a373011440841409030e Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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BCR573E6327HTSA1 BCR573E6327HTSA1 Infineon Technologies bcr573.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a373011440841409030e Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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BCR583E6327HTSA1 BCR583E6327HTSA1 Infineon Technologies bcr583.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a3730114408538a1030f Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
 Mindestbestellmenge: 18000 Stücke
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BCR583E6327HTSA1 BCR583E6327HTSA1 Infineon Technologies bcr583.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a3730114408538a1030f Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
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BCR523UE6433HTMA1 BCR523UE6433HTMA1 Infineon Technologies bcr523series.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a3730114407c929c0309 Description: TRANS 2NPN PREBIAS 0.33W SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 330mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Frequency - Transition: 100MHz
Resistor - Base (R1): 1kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: PG-SC74-6
Produkt ist nicht verfügbar
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IPT017N12NM6ATMA1 IPT017N12NM6ATMA1 Infineon Technologies Infineon-IPT017N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185c27a93a6538c Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 331A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 150A, 10V
Power Dissipation (Max): 3W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
auf Bestellung 6000 Stücke:
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IPT017N12NM6ATMA1 IPT017N12NM6ATMA1 Infineon Technologies Infineon-IPT017N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185c27a93a6538c Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 331A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 150A, 10V
Power Dissipation (Max): 3W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
auf Bestellung 6869 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.01 EUR
10+9.47 EUR
50+7.52 EUR
100+6.9 EUR
500+6.62 EUR
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IPTC017N12NM6ATMA1 IPTC017N12NM6ATMA1 Infineon Technologies Infineon-IPTC017N12NM6-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c850f4bee0185c27a6afa537e Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 331A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Supplier Device Package: PG-HDSOP-16-U01
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
Produkt ist nicht verfügbar
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IPTC017N12NM6ATMA1 IPTC017N12NM6ATMA1 Infineon Technologies Infineon-IPTC017N12NM6-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c850f4bee0185c27a6afa537e Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 331A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Supplier Device Package: PG-HDSOP-16-U01
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
auf Bestellung 748 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.84 EUR
10+10.76 EUR
100+7.9 EUR
500+7.77 EUR
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IR4311MTRPBF IR4311MTRPBF Infineon Technologies ir4301.pdf?fileId=5546d462533600a4015355d5fc691819 Description: IC AMP CLASS D MONO 35W PQFN22
Supplier Device Package: 22-PQFN (5x6)
Max Output Power x Channels @ Load: 35W x 1 @ 4Ohm
Operating Temperature: -40°C ~ 100°C (TA)
Type: Class D
Mounting Type: Surface Mount
Output Type: 1-Channel (Mono)
Package / Case: 22-PowerVQFN
Features: Depop, Differential Inputs
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IR4311MTRPBF IR4311MTRPBF Infineon Technologies ir4301.pdf?fileId=5546d462533600a4015355d5fc691819 Description: IC AMP CLASS D MONO 35W PQFN22
Supplier Device Package: 22-PQFN (5x6)
Max Output Power x Channels @ Load: 35W x 1 @ 4Ohm
Operating Temperature: -40°C ~ 100°C (TA)
Type: Class D
Mounting Type: Surface Mount
Output Type: 1-Channel (Mono)
Package / Case: 22-PowerVQFN
Features: Depop, Differential Inputs
Packaging: Cut Tape (CT)
auf Bestellung 160 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.31 EUR
10+5.52 EUR
25+5.07 EUR
100+4.57 EUR
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CY7C1399BN-12VXIT CY7C1399BN-12VXIT Infineon Technologies Infineon-CY7C1399BN_256-Kbit_(32_K_8)_Static_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2fd5f37f9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 256KBIT PARALLEL 28SOJ
Packaging: Tape & Reel (TR)
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOJ
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1399BN-12VXIT CY7C1399BN-12VXIT Infineon Technologies Infineon-CY7C1399BN_256-Kbit_(32_K_8)_Static_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2fd5f37f9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 256KBIT PARALLEL 28SOJ
Packaging: Cut Tape (CT)
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOJ
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
auf Bestellung 811 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.45 EUR
10+5.09 EUR
25+4.95 EUR
50+4.83 EUR
100+4.71 EUR
250+4.57 EUR
500+4.46 EUR
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CY7C1399B-12VC CY7C1399B-12VC Infineon Technologies CY7C1399B%20RevD.pdf Description: IC SRAM 256KBIT PARALLEL 28SOJ
Packaging: Tube
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOJ
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1399B-12ZC CY7C1399B-12ZC Infineon Technologies CY7C1399B%20RevD.pdf Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Bag
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
auf Bestellung 3219 Stücke:
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333+1.76 EUR
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CY7C1399B-12ZC CY7C1399B-12ZC Infineon Technologies CY7C1399B%20RevD.pdf Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Bag
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1399B-15ZC CY7C1399B-15ZC Infineon Technologies CY7C1399B%20RevD.pdf Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Bag
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1399B-12VXC CY7C1399B-12VXC Infineon Technologies CY7C1399B%20RevD.pdf Description: IC SRAM 256KBIT PARALLEL 28SOJ
Packaging: Tube
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOJ
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1350 Stücke
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CY7C1399B-15VXC CY7C1399B-15VXC Infineon Technologies CY7C1399B%20RevD.pdf Description: IC SRAM 256KBIT PARALLEL 28SOJ
Packaging: Tube
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOJ
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1399B-12ZXC CY7C1399B-12ZXC Infineon Technologies CY7C1399B%20RevD.pdf Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Tray
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1399B-15ZXC CY7C1399B-15ZXC Infineon Technologies CY7C1399B%20RevD.pdf Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Tray
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
auf Bestellung 1233 Stücke:
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226+2.78 EUR
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CY7C1399B-15ZXC CY7C1399B-15ZXC Infineon Technologies CY7C1399B%20RevD.pdf Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Tray
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IDW30G120C5BFKSA1 IDW30G120C5BFKSA1 Infineon Technologies Infineon-20140610_IDW30G120C5-DS-v02_00-en.pdf?fileId=5546d461464245d30146956f595b6a6b Description: DIODE ARR SIC 1200V 44A TO247-3
Current - Reverse Leakage @ Vr: 124 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO247-3
Current - Average Rectified (Io) (per Diode): 44A (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 420 Stücke:
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1+23.23 EUR
30+13.92 EUR
120+11.89 EUR
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KPY57-RK Infineon Technologies INFNS03494-1.pdf?t.download=true&u=5oefqw Description: SENSOR 870.2PSI 0.2" .2V TO8-5
Output: 0 mV ~ 200 mV
Mounting Type: Through Hole
Output Type: Wheatstone Bridge
Package / Case: TO-8 Style, 8 Leads
Packaging: Bulk
Voltage - Supply: 12V
Termination Style: PC Pins
Operating Temperature: -40°C ~ 125°C
Operating Pressure: 870.2PSI (6000kPa)
Maximum Pressure: 1450.38PSI (10000kPa)
Port Style: Barbless
Supplier Device Package: TO-8-5
Applications: Board Mount
Port Size: Male - 0.2" (5.1mm) Tube
auf Bestellung 120 Stücke:
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10+65.51 EUR
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IGO60R070D1AUMA2 IGO60R070D1AUMA2 Infineon Technologies Infineon-IGO60R070D1-DataSheet-v02_11-EN.pdf?fileId=5546d46265f064ff016685f053216514 Description: GAN HV
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): -10V
Supplier Device Package: PG-DSO-20-85
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Power Dissipation (Max): 125W (Tc)
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
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IGO60R070D1AUMA2 IGO60R070D1AUMA2 Infineon Technologies Infineon-IGO60R070D1-DataSheet-v02_11-EN.pdf?fileId=5546d46265f064ff016685f053216514 Description: GAN HV
Packaging: Cut Tape (CT)
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-85
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
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CYW55572MIFFBG Infineon Technologies Description: RF TXRX MODULE WIFI
Packaging: Tray
Produkt ist nicht verfügbar
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IRSM836-084MATR IRSM836-084MATR Infineon Technologies Infineon-IRSM836-084MA-DataSheet-vNA-EN.pdf Description: IC HALF BRIDGE DRIVER 7A 36QFN
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit
Package / Case: 36-PowerVQFN
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 10V ~ 20V
Rds On (Typ): 310mOhm
Applications: AC Motors
Current - Output / Channel: 7A
Current - Peak Output: 27A
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 36-PQFN (12x12)
Fault Protection: UVLO
Load Type: Inductive
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IRSM836-084MATR IRSM836-084MATR Infineon Technologies Infineon-IRSM836-084MA-DataSheet-vNA-EN.pdf Description: IC HALF BRIDGE DRIVER 7A 36QFN
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit
Package / Case: 36-PowerVQFN
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 10V ~ 20V
Rds On (Typ): 310mOhm
Applications: AC Motors
Current - Output / Channel: 7A
Current - Peak Output: 27A
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 36-PQFN (12x12)
Fault Protection: UVLO
Load Type: Inductive
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SIGC12T60SNCX1SA3 Infineon Technologies SIGC12T60SNC_ed2_11-28-03.pdf Description: IGBT 3 CHIP 600V WAFER
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 10 A
Test Condition: 400V, 10A, 25Ohm, 15V
Td (on/off) @ 25°C: 29ns/266ns
IGBT Type: NPT
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
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SIGC12T60SNCX7SA2 Infineon Technologies Description: IGBT 3 CHIP 600V WAFER
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 10 A
Test Condition: 400V, 10A, 25Ohm, 15V
Td (on/off) @ 25°C: 29ns/266ns
IGBT Type: NPT
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
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SIGC12T60NCX7SA2 Infineon Technologies Description: IGBT 3 CHIP 600V WAFER
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 10 A
Test Condition: 300V, 10A, 27Ohm, 15V
Td (on/off) @ 25°C: 21ns/110ns
IGBT Type: NPT
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
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SIGC12T60NCX1SA5 SIGC12T60NCX1SA5 Infineon Technologies SIGC12T60NC_ed2_11-28-03.pdf Description: IGBT 3 CHIP 600V WAFER
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 10 A
Test Condition: 300V, 10A, 27Ohm, 15V
Td (on/off) @ 25°C: 21ns/110ns
IGBT Type: NPT
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
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SIGC12T60NCX1SA4 Infineon Technologies SIGC12T60NC_ed2_11-28-03.pdf Description: IGBT 3 CHIP 600V WAFER
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 10 A
Test Condition: 300V, 10A, 27Ohm, 15V
Td (on/off) @ 25°C: 21ns/110ns
IGBT Type: NPT
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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SIGC12T60NCX1SA3 Infineon Technologies SIGC12T60NC_ed2_11-28-03.pdf Description: IGBT 3 CHIP 600V WAFER
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 10 A
Test Condition: 300V, 10A, 27Ohm, 15V
Td (on/off) @ 25°C: 21ns/110ns
IGBT Type: NPT
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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SIGC12T60SNCX1SA2 Infineon Technologies SIGC12T60SNC_ed2_11-28-03.pdf Description: IGBT 3 CHIP 600V WAFER
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 10 A
Test Condition: 400V, 10A, 25Ohm, 15V
Td (on/off) @ 25°C: 29ns/266ns
IGBT Type: NPT
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
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SIGC12T60SNCX7SA1 Infineon Technologies Description: IGBT 3 CHIP 600V WAFER
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 10 A
Test Condition: 400V, 10A, 25Ohm, 15V
Td (on/off) @ 25°C: 29ns/266ns
IGBT Type: NPT
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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SIGC12T60SNCX1SA4 Infineon Technologies SIGC12T60SNC_ed2_11-28-03.pdf Description: IGBT 3 CHIP 600V WAFER
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 10 A
Test Condition: 400V, 10A, 25Ohm, 15V
Td (on/off) @ 25°C: 29ns/266ns
IGBT Type: NPT
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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XC836MT2FRAABKXUMA1 XC836MT2FRAABKXUMA1 Infineon Technologies Infineon-XC835_XC836-DS-v01_04-cn.pdf?fileId=db3a30432ba3fa6f012baa1500492fd3 Description: IC MCU 8BIT 8KB FLASH 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Connectivity: I2C, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-1
Number of I/O: 23
DigiKey Programmable: Not Verified
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CY8CKIT-009A CY8CKIT-009A Infineon Technologies CY8C38_PSoC-3_RevQ.pdf Description: CY8C38/CY8CKIT-001(A) EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 8-Bit
Contents: Board(s)
Core Processor: 8051
Utilized IC / Part: CY8C38, CY8CKIT-001(A)
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F3L8MR12W2M1HB11BPSA1 F3L8MR12W2M1HB11BPSA1 Infineon Technologies Description: LOW POWER EASY
Packaging: Tray
auf Bestellung 15 Stücke:
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CY8C5688AXI-LP099 CY8C5688AXI-LP099 Infineon Technologies download Description: IC MCU 32BIT 256KB FLASH 100TQFP
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 64K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 62
Supplier Device Package: 100-TQFP (14x14)
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 2x12b; D/A 4x8b
Core Processor: ARM® Cortex®-M3
EEPROM Size: 2K x 8
Program Memory Type: FLASH
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CYAT81658-100AS48T CYAT81658-100AS48T Infineon Technologies PdfFile984121.pdf Description: PSOC BASED - TRUETOUCH
Qualification: AEC-Q100
Grade: Automotive
Touchscreen: 2 Wire Capacitive
Supplier Device Package: 100-TQFP (14x14)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Interface: I2C, SPI
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tape & Reel (TR)
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CYAT81658-100AS48T CYAT81658-100AS48T Infineon Technologies PdfFile984121.pdf Description: PSOC BASED - TRUETOUCH
Touchscreen: 2 Wire Capacitive
Supplier Device Package: 100-TQFP (14x14)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Qualification: AEC-Q100
Grade: Automotive
Interface: I2C, SPI
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Cut Tape (CT)
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1+27.08 EUR
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100+18.37 EUR
250+17.62 EUR
500+17.17 EUR
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CYPD3173-24LQXQ CYPD3173-24LQXQ Infineon Technologies Infineon-CCG3PA-NFET_USB_Type-C_Port_Controller-AdditionalTechnicalInformation-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea4c007347 Description: CCG3PA-NFET
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Controller Series: CYPD3x
Program Memory Type: FLASH (64kB)
Applications: Power Adaptor
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
DigiKey Programmable: Not Verified
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CYPD3173-24LQXQT CYPD3173-24LQXQT Infineon Technologies Infineon-CCG3PA-NFET_USB_Type-C_Port_Controller-AdditionalTechnicalInformation-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea4c007347 Description: CCG3PA-NFET
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Controller Series: CYPD3x
Program Memory Type: FLASH (64kB)
Applications: Power Adaptor
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
DigiKey Programmable: Not Verified
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CYPD3173P-24LQXQ CYPD3173P-24LQXQ Infineon Technologies Infineon-CCG3PA-NFET_USB_Type-C_Port_Controller-AdditionalTechnicalInformation-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea4c007347 Description: CCG3PA-NFET
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: PWM
RAM Size: 4K x 8
Controller Series: CYPD3x
Program Memory Type: FLASH (64kB)
Applications: Power Adaptor
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 6
DigiKey Programmable: Not Verified
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CYPD3135-40LQXQ CYPD3135-40LQXQ Infineon Technologies Infineon-EZ-PD_CCG3_USB_Type-C_Controller_with_Power_Delivery-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed8b45c5a56 Description: TYPE-C - SMPS/LP
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 21.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (128kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 16
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CYPD3120-40LQXIT CYPD3120-40LQXIT Infineon Technologies download Description: CCG3
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 21.5V
Program Memory Type: FLASH (128kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYPD3123-40LQXI CYPD3123-40LQXI Infineon Technologies download Description: CCG3
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 21.5V
Program Memory Type: FLASH (128kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4900 Stücke
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IRMCK341TY IRMCK341TY Infineon Technologies irmck341.pdf?fileId=5546d462533600a401535672ce66275e Description: IC MTRDRV 1.62-1.98/3-3.6V 64QFP
Motor Type - AC, DC: AC, Synchronous
Supplier Device Package: 64-QFP
Technology: IGBT
Applications: Appliance
Voltage - Supply: 1.62V ~ 1.98V, 3V ~ 3.6V
Output Configuration: Pre-Driver - Half Bridge (3)
Operating Temperature: -40°C ~ 85°C (TA)
Interface: I2C, RS-232, SPI
Function: Controller - Commutation, Direction Management
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
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IPA60R210CFD7XKSA1 IPA60R210CFD7XKSA1 Infineon Technologies Infineon-MOSFET_CoolMOS_CFD7_600V-PB-v01_00-EN.pdf?fileId=5546d4625f96303e015fdd5758e81db7 Description: LOW POWER_NEW
Packaging: Tube
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
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IPA60R060C7XKSA1 IPA60R060C7XKSA1 Infineon Technologies Infineon-IPA60R060C7-DS-v02_00-EN.pdf?fileId=5546d462518ffd850151a166e8e32bef Description: MOSFET N-CH 600V 16A TO220
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 4V @ 800µA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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2+12.51 EUR
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IPW65R280C6FKSA1 IPW65R280C6FKSA1 Infineon Technologies IPW65R280C6_2_0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30432a7fedfc012a8aceded858e0 Description: MOSFET N-CH 650V 13.8A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO247-3-1
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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171+3.2 EUR
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IPA90R500C3XKSA2 IPA90R500C3XKSA2 Infineon Technologies Infineon-IPA90R500C3-DS-v01_00-en.pdf?fileId=db3a30431b3e89eb011b8cd1d1b10fb6 Description: MOSFET N-CH 900V 11A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 740µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V
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EVAL5BR2280BZ700MA1TOBO1 EVAL5BR2280BZ700MA1TOBO1 Infineon Technologies Infineon-Engineering_Report_Evaluation_board_EVAL_5BR2280BZ_700mA1-ApplicationNotes-v01_00-EN.pdf?fileId=8ac78c8c80f4d329018189e3ae35157a Description: EVALUATION BOARD FOR ICE5BR2280B
Current - Output: 700mA
Voltage - Input: 85 ~ 264 VAC
Voltage - Output: 15V
Packaging: Bulk
Power - Output: 10.5 W
Outputs and Type: 1, Non-Isolated
Main Purpose: AC/DC Converter
Supplied Contents: Board(s)
Utilized IC / Part: ICE5BR2280BZ
Board Type: Fully Populated
Regulator Topology: Buck
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
1+212.72 EUR
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REF5BR2280BZ22W1TOBO1 REF5BR2280BZ22W1TOBO1 Infineon Technologies Infineon-Reference_board_REF_5BR2280BZ_22W1-ApplicationNotes-v01_00-EN.pdf?fileId=8ac78c8c80f4d329018180800a9c5ee5 Description: REFERENCE BOARD FOR ICE5BR2280BZ
Power - Output: 22 W
Outputs and Type: 3, Isolated
Main Purpose: AC/DC, Primary Side
Supplied Contents: Board(s)
Utilized IC / Part: ICE5BR2280BZ
Board Type: Fully Populated
Regulator Topology: Flyback
Current - Output: 1.4A, 300mA, 150mA
Voltage - Input: 85 ~ 264 VAC
Voltage - Output: 5V, 12V, 15V
Packaging: Bulk
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
1+212.72 EUR
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REF5AR2280CZ22W1TOBO1 REF5AR2280CZ22W1TOBO1 Infineon Technologies Infineon-Reference_board_REF_5AR2280CZ_22W1-ApplicationNotes-v01_00-EN.pdf?fileId=8ac78c8c80f4d329018189f602721582 Description: EVAL BOARD FOR ICE5AR2280CZ
Contents: Board(s)
Power - Output: 22W
Outputs and Type: 3 Isolated Outputs
Main Purpose: AC/DC, Primary Side
Supplied Contents: Board(s)
Utilized IC / Part: ICE5AR2280CZ
Board Type: Fully Populated
Regulator Topology: Flyback
Current - Output: 1.4A, 300mA, 150mA
Voltage - Input: 85 ~ 264 VAC
Voltage - Output: 5V, 12V, 15V
Packaging: Bulk
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
1+190.97 EUR
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IPT210N25NFDATMA1 IPT210N25NFDATMA1 Infineon Technologies Infineon-IPT210N25NFD-DS-v02_00-EN.pdf?fileId=5546d462533600a401537a8be9c171f2 Description: MV POWER MOS
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 125 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-HSOF-8-1
Vgs(th) (Max) @ Id: 4V @ 267µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 69A, 10V
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPT210N25NFDATMA1 IPT210N25NFDATMA1 Infineon Technologies Infineon-IPT210N25NFD-DS-v02_00-EN.pdf?fileId=5546d462533600a401537a8be9c171f2 Description: MV POWER MOS
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 125 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-HSOF-8-1
Vgs(th) (Max) @ Id: 4V @ 267µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 69A, 10V
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
auf Bestellung 1684 Stücke:
Lieferzeit 10-14 Tag (e)
2+18.1 EUR
10+12.39 EUR
100+9.17 EUR
500+7.81 EUR
1000+7.58 EUR
Mindestbestellmenge: 2 Stücke
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BCR573E6327HTSA1 bcr573.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a373011440841409030e
BCR573E6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
Mindestbestellmenge: 18000 Stücke
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BCR573E6327HTSA1 bcr573.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a373011440841409030e
BCR573E6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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BCR583E6327HTSA1 bcr583.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a3730114408538a1030f
BCR583E6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
Mindestbestellmenge: 18000 Stücke
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BCR583E6327HTSA1 bcr583.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a3730114408538a1030f
BCR583E6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
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BCR523UE6433HTMA1 bcr523series.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a3730114407c929c0309
BCR523UE6433HTMA1
Hersteller: Infineon Technologies
Description: TRANS 2NPN PREBIAS 0.33W SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 330mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Frequency - Transition: 100MHz
Resistor - Base (R1): 1kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: PG-SC74-6
Produkt ist nicht verfügbar
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IPT017N12NM6ATMA1 Infineon-IPT017N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185c27a93a6538c
IPT017N12NM6ATMA1
Hersteller: Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 331A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 150A, 10V
Power Dissipation (Max): 3W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+5.4 EUR
Mindestbestellmenge: 2000 Stücke
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IPT017N12NM6ATMA1 Infineon-IPT017N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185c27a93a6538c
IPT017N12NM6ATMA1
Hersteller: Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 331A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 150A, 10V
Power Dissipation (Max): 3W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
auf Bestellung 6869 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+14.01 EUR
10+9.47 EUR
50+7.52 EUR
100+6.9 EUR
500+6.62 EUR
Mindestbestellmenge: 2 Stücke
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IPTC017N12NM6ATMA1 Infineon-IPTC017N12NM6-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c850f4bee0185c27a6afa537e
IPTC017N12NM6ATMA1
Hersteller: Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 331A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Supplier Device Package: PG-HDSOP-16-U01
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
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IPTC017N12NM6ATMA1 Infineon-IPTC017N12NM6-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c850f4bee0185c27a6afa537e
IPTC017N12NM6ATMA1
Hersteller: Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 331A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Supplier Device Package: PG-HDSOP-16-U01
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
auf Bestellung 748 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+15.84 EUR
10+10.76 EUR
100+7.9 EUR
500+7.77 EUR
Mindestbestellmenge: 2 Stücke
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IR4311MTRPBF ir4301.pdf?fileId=5546d462533600a4015355d5fc691819
IR4311MTRPBF
Hersteller: Infineon Technologies
Description: IC AMP CLASS D MONO 35W PQFN22
Supplier Device Package: 22-PQFN (5x6)
Max Output Power x Channels @ Load: 35W x 1 @ 4Ohm
Operating Temperature: -40°C ~ 100°C (TA)
Type: Class D
Mounting Type: Surface Mount
Output Type: 1-Channel (Mono)
Package / Case: 22-PowerVQFN
Features: Depop, Differential Inputs
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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IR4311MTRPBF ir4301.pdf?fileId=5546d462533600a4015355d5fc691819
IR4311MTRPBF
Hersteller: Infineon Technologies
Description: IC AMP CLASS D MONO 35W PQFN22
Supplier Device Package: 22-PQFN (5x6)
Max Output Power x Channels @ Load: 35W x 1 @ 4Ohm
Operating Temperature: -40°C ~ 100°C (TA)
Type: Class D
Mounting Type: Surface Mount
Output Type: 1-Channel (Mono)
Package / Case: 22-PowerVQFN
Features: Depop, Differential Inputs
Packaging: Cut Tape (CT)
auf Bestellung 160 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.31 EUR
10+5.52 EUR
25+5.07 EUR
100+4.57 EUR
Mindestbestellmenge: 3 Stücke
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CY7C1399BN-12VXIT Infineon-CY7C1399BN_256-Kbit_(32_K_8)_Static_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2fd5f37f9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1399BN-12VXIT
Hersteller: Infineon Technologies
Description: IC SRAM 256KBIT PARALLEL 28SOJ
Packaging: Tape & Reel (TR)
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOJ
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1399BN-12VXIT Infineon-CY7C1399BN_256-Kbit_(32_K_8)_Static_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2fd5f37f9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1399BN-12VXIT
Hersteller: Infineon Technologies
Description: IC SRAM 256KBIT PARALLEL 28SOJ
Packaging: Cut Tape (CT)
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOJ
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
auf Bestellung 811 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.45 EUR
10+5.09 EUR
25+4.95 EUR
50+4.83 EUR
100+4.71 EUR
250+4.57 EUR
500+4.46 EUR
Mindestbestellmenge: 4 Stücke
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CY7C1399B-12VC CY7C1399B%20RevD.pdf
CY7C1399B-12VC
Hersteller: Infineon Technologies
Description: IC SRAM 256KBIT PARALLEL 28SOJ
Packaging: Tube
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOJ
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1399B-12ZC CY7C1399B%20RevD.pdf
CY7C1399B-12ZC
Hersteller: Infineon Technologies
Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Bag
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
auf Bestellung 3219 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
333+1.76 EUR
Mindestbestellmenge: 333 Stücke
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CY7C1399B-12ZC CY7C1399B%20RevD.pdf
CY7C1399B-12ZC
Hersteller: Infineon Technologies
Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Bag
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1399B-15ZC CY7C1399B%20RevD.pdf
CY7C1399B-15ZC
Hersteller: Infineon Technologies
Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Bag
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1399B-12VXC CY7C1399B%20RevD.pdf
CY7C1399B-12VXC
Hersteller: Infineon Technologies
Description: IC SRAM 256KBIT PARALLEL 28SOJ
Packaging: Tube
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOJ
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1350 Stücke
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CY7C1399B-15VXC CY7C1399B%20RevD.pdf
CY7C1399B-15VXC
Hersteller: Infineon Technologies
Description: IC SRAM 256KBIT PARALLEL 28SOJ
Packaging: Tube
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOJ
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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CY7C1399B-12ZXC CY7C1399B%20RevD.pdf
CY7C1399B-12ZXC
Hersteller: Infineon Technologies
Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Tray
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1399B-15ZXC CY7C1399B%20RevD.pdf
CY7C1399B-15ZXC
Hersteller: Infineon Technologies
Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Tray
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
auf Bestellung 1233 Stücke:
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AnzahlPrivatkunde
226+2.78 EUR
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CY7C1399B-15ZXC CY7C1399B%20RevD.pdf
CY7C1399B-15ZXC
Hersteller: Infineon Technologies
Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Tray
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IDW30G120C5BFKSA1 Infineon-20140610_IDW30G120C5-DS-v02_00-en.pdf?fileId=5546d461464245d30146956f595b6a6b
IDW30G120C5BFKSA1
Hersteller: Infineon Technologies
Description: DIODE ARR SIC 1200V 44A TO247-3
Current - Reverse Leakage @ Vr: 124 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO247-3
Current - Average Rectified (Io) (per Diode): 44A (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 420 Stücke:
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AnzahlPrivatkunde
1+23.23 EUR
30+13.92 EUR
120+11.89 EUR
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KPY57-RK INFNS03494-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: SENSOR 870.2PSI 0.2" .2V TO8-5
Output: 0 mV ~ 200 mV
Mounting Type: Through Hole
Output Type: Wheatstone Bridge
Package / Case: TO-8 Style, 8 Leads
Packaging: Bulk
Voltage - Supply: 12V
Termination Style: PC Pins
Operating Temperature: -40°C ~ 125°C
Operating Pressure: 870.2PSI (6000kPa)
Maximum Pressure: 1450.38PSI (10000kPa)
Port Style: Barbless
Supplier Device Package: TO-8-5
Applications: Board Mount
Port Size: Male - 0.2" (5.1mm) Tube
auf Bestellung 120 Stücke:
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AnzahlPrivatkunde
10+65.51 EUR
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IGO60R070D1AUMA2 Infineon-IGO60R070D1-DataSheet-v02_11-EN.pdf?fileId=5546d46265f064ff016685f053216514
IGO60R070D1AUMA2
Hersteller: Infineon Technologies
Description: GAN HV
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): -10V
Supplier Device Package: PG-DSO-20-85
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Power Dissipation (Max): 125W (Tc)
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar
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IGO60R070D1AUMA2 Infineon-IGO60R070D1-DataSheet-v02_11-EN.pdf?fileId=5546d46265f064ff016685f053216514
IGO60R070D1AUMA2
Hersteller: Infineon Technologies
Description: GAN HV
Packaging: Cut Tape (CT)
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-85
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Produkt ist nicht verfügbar
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CYW55572MIFFBG
Hersteller: Infineon Technologies
Description: RF TXRX MODULE WIFI
Packaging: Tray
Produkt ist nicht verfügbar
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IRSM836-084MATR Infineon-IRSM836-084MA-DataSheet-vNA-EN.pdf
IRSM836-084MATR
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 7A 36QFN
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit
Package / Case: 36-PowerVQFN
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 10V ~ 20V
Rds On (Typ): 310mOhm
Applications: AC Motors
Current - Output / Channel: 7A
Current - Peak Output: 27A
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 36-PQFN (12x12)
Fault Protection: UVLO
Load Type: Inductive
Produkt ist nicht verfügbar
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IRSM836-084MATR Infineon-IRSM836-084MA-DataSheet-vNA-EN.pdf
IRSM836-084MATR
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 7A 36QFN
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit
Package / Case: 36-PowerVQFN
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 10V ~ 20V
Rds On (Typ): 310mOhm
Applications: AC Motors
Current - Output / Channel: 7A
Current - Peak Output: 27A
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 36-PQFN (12x12)
Fault Protection: UVLO
Load Type: Inductive
auf Bestellung 345 Stücke:
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2+14.99 EUR
10+11.61 EUR
25+10.77 EUR
100+9.97 EUR
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SIGC12T60SNCX1SA3 SIGC12T60SNC_ed2_11-28-03.pdf
Hersteller: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 10 A
Test Condition: 400V, 10A, 25Ohm, 15V
Td (on/off) @ 25°C: 29ns/266ns
IGBT Type: NPT
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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SIGC12T60SNCX7SA2
Hersteller: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 10 A
Test Condition: 400V, 10A, 25Ohm, 15V
Td (on/off) @ 25°C: 29ns/266ns
IGBT Type: NPT
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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SIGC12T60NCX7SA2
Hersteller: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 10 A
Test Condition: 300V, 10A, 27Ohm, 15V
Td (on/off) @ 25°C: 21ns/110ns
IGBT Type: NPT
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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SIGC12T60NCX1SA5 SIGC12T60NC_ed2_11-28-03.pdf
SIGC12T60NCX1SA5
Hersteller: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 10 A
Test Condition: 300V, 10A, 27Ohm, 15V
Td (on/off) @ 25°C: 21ns/110ns
IGBT Type: NPT
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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SIGC12T60NCX1SA4 SIGC12T60NC_ed2_11-28-03.pdf
Hersteller: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 10 A
Test Condition: 300V, 10A, 27Ohm, 15V
Td (on/off) @ 25°C: 21ns/110ns
IGBT Type: NPT
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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SIGC12T60NCX1SA3 SIGC12T60NC_ed2_11-28-03.pdf
Hersteller: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 10 A
Test Condition: 300V, 10A, 27Ohm, 15V
Td (on/off) @ 25°C: 21ns/110ns
IGBT Type: NPT
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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SIGC12T60SNCX1SA2 SIGC12T60SNC_ed2_11-28-03.pdf
Hersteller: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 10 A
Test Condition: 400V, 10A, 25Ohm, 15V
Td (on/off) @ 25°C: 29ns/266ns
IGBT Type: NPT
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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SIGC12T60SNCX7SA1
Hersteller: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 10 A
Test Condition: 400V, 10A, 25Ohm, 15V
Td (on/off) @ 25°C: 29ns/266ns
IGBT Type: NPT
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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SIGC12T60SNCX1SA4 SIGC12T60SNC_ed2_11-28-03.pdf
Hersteller: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 10 A
Test Condition: 400V, 10A, 25Ohm, 15V
Td (on/off) @ 25°C: 29ns/266ns
IGBT Type: NPT
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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XC836MT2FRAABKXUMA1 Infineon-XC835_XC836-DS-v01_04-cn.pdf?fileId=db3a30432ba3fa6f012baa1500492fd3
XC836MT2FRAABKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Connectivity: I2C, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-1
Number of I/O: 23
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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CY8CKIT-009A CY8C38_PSoC-3_RevQ.pdf
CY8CKIT-009A
Hersteller: Infineon Technologies
Description: CY8C38/CY8CKIT-001(A) EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 8-Bit
Contents: Board(s)
Core Processor: 8051
Utilized IC / Part: CY8C38, CY8CKIT-001(A)
auf Bestellung 567 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.65 EUR
Mindestbestellmenge: 2 Stücke
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F3L8MR12W2M1HB11BPSA1
F3L8MR12W2M1HB11BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY
Packaging: Tray
auf Bestellung 15 Stücke:
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1+454.29 EUR
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CY8C5688AXI-LP099 download
CY8C5688AXI-LP099
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 100TQFP
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 64K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 62
Supplier Device Package: 100-TQFP (14x14)
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 2x12b; D/A 4x8b
Core Processor: ARM® Cortex®-M3
EEPROM Size: 2K x 8
Program Memory Type: FLASH
auf Bestellung 752 Stücke:
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AnzahlPrivatkunde
1+45.17 EUR
10+36.49 EUR
90+34.49 EUR
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CYAT81658-100AS48T PdfFile984121.pdf
CYAT81658-100AS48T
Hersteller: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Qualification: AEC-Q100
Grade: Automotive
Touchscreen: 2 Wire Capacitive
Supplier Device Package: 100-TQFP (14x14)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Interface: I2C, SPI
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tape & Reel (TR)
auf Bestellung 1500 Stücke:
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AnzahlPrivatkunde
1500+15.45 EUR
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CYAT81658-100AS48T PdfFile984121.pdf
CYAT81658-100AS48T
Hersteller: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Touchscreen: 2 Wire Capacitive
Supplier Device Package: 100-TQFP (14x14)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Qualification: AEC-Q100
Grade: Automotive
Interface: I2C, SPI
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Cut Tape (CT)
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+27.08 EUR
10+21.37 EUR
25+19.94 EUR
100+18.37 EUR
250+17.62 EUR
500+17.17 EUR
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CYPD3173-24LQXQ Infineon-CCG3PA-NFET_USB_Type-C_Port_Controller-AdditionalTechnicalInformation-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea4c007347
CYPD3173-24LQXQ
Hersteller: Infineon Technologies
Description: CCG3PA-NFET
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Controller Series: CYPD3x
Program Memory Type: FLASH (64kB)
Applications: Power Adaptor
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYPD3173-24LQXQT Infineon-CCG3PA-NFET_USB_Type-C_Port_Controller-AdditionalTechnicalInformation-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea4c007347
CYPD3173-24LQXQT
Hersteller: Infineon Technologies
Description: CCG3PA-NFET
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Controller Series: CYPD3x
Program Memory Type: FLASH (64kB)
Applications: Power Adaptor
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYPD3173P-24LQXQ Infineon-CCG3PA-NFET_USB_Type-C_Port_Controller-AdditionalTechnicalInformation-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea4c007347
CYPD3173P-24LQXQ
Hersteller: Infineon Technologies
Description: CCG3PA-NFET
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: PWM
RAM Size: 4K x 8
Controller Series: CYPD3x
Program Memory Type: FLASH (64kB)
Applications: Power Adaptor
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 6
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYPD3135-40LQXQ Infineon-EZ-PD_CCG3_USB_Type-C_Controller_with_Power_Delivery-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed8b45c5a56
CYPD3135-40LQXQ
Hersteller: Infineon Technologies
Description: TYPE-C - SMPS/LP
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 21.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (128kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 16
Produkt ist nicht verfügbar
Mindestbestellmenge: 4900 Stücke
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CYPD3120-40LQXIT download
CYPD3120-40LQXIT
Hersteller: Infineon Technologies
Description: CCG3
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 21.5V
Program Memory Type: FLASH (128kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYPD3123-40LQXI download
CYPD3123-40LQXI
Hersteller: Infineon Technologies
Description: CCG3
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 21.5V
Program Memory Type: FLASH (128kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRMCK341TY irmck341.pdf?fileId=5546d462533600a401535672ce66275e
IRMCK341TY
Hersteller: Infineon Technologies
Description: IC MTRDRV 1.62-1.98/3-3.6V 64QFP
Motor Type - AC, DC: AC, Synchronous
Supplier Device Package: 64-QFP
Technology: IGBT
Applications: Appliance
Voltage - Supply: 1.62V ~ 1.98V, 3V ~ 3.6V
Output Configuration: Pre-Driver - Half Bridge (3)
Operating Temperature: -40°C ~ 85°C (TA)
Interface: I2C, RS-232, SPI
Function: Controller - Commutation, Direction Management
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
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IPA60R210CFD7XKSA1 Infineon-MOSFET_CoolMOS_CFD7_600V-PB-v01_00-EN.pdf?fileId=5546d4625f96303e015fdd5758e81db7
IPA60R210CFD7XKSA1
Hersteller: Infineon Technologies
Description: LOW POWER_NEW
Packaging: Tube
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+5.11 EUR
50+2.49 EUR
100+2.31 EUR
500+2.01 EUR
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IPA60R060C7XKSA1 Infineon-IPA60R060C7-DS-v02_00-EN.pdf?fileId=5546d462518ffd850151a166e8e32bef
IPA60R060C7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 16A TO220
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 4V @ 800µA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 286 Stücke:
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AnzahlPrivatkunde
2+12.51 EUR
50+8.97 EUR
100+8.16 EUR
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IPW65R280C6FKSA1 IPW65R280C6_2_0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30432a7fedfc012a8aceded858e0
IPW65R280C6FKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 13.8A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO247-3-1
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
171+3.2 EUR
Mindestbestellmenge: 171 Stücke
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IPA90R500C3XKSA2 Infineon-IPA90R500C3-DS-v01_00-en.pdf?fileId=db3a30431b3e89eb011b8cd1d1b10fb6
IPA90R500C3XKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 900V 11A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 740µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V
auf Bestellung 584 Stücke:
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AnzahlPrivatkunde
3+8.21 EUR
10+5.4 EUR
50+4.2 EUR
100+3.81 EUR
500+3.13 EUR
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EVAL5BR2280BZ700MA1TOBO1 Infineon-Engineering_Report_Evaluation_board_EVAL_5BR2280BZ_700mA1-ApplicationNotes-v01_00-EN.pdf?fileId=8ac78c8c80f4d329018189e3ae35157a
EVAL5BR2280BZ700MA1TOBO1
Hersteller: Infineon Technologies
Description: EVALUATION BOARD FOR ICE5BR2280B
Current - Output: 700mA
Voltage - Input: 85 ~ 264 VAC
Voltage - Output: 15V
Packaging: Bulk
Power - Output: 10.5 W
Outputs and Type: 1, Non-Isolated
Main Purpose: AC/DC Converter
Supplied Contents: Board(s)
Utilized IC / Part: ICE5BR2280BZ
Board Type: Fully Populated
Regulator Topology: Buck
auf Bestellung 3 Stücke:
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AnzahlPrivatkunde
1+212.72 EUR
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REF5BR2280BZ22W1TOBO1 Infineon-Reference_board_REF_5BR2280BZ_22W1-ApplicationNotes-v01_00-EN.pdf?fileId=8ac78c8c80f4d329018180800a9c5ee5
REF5BR2280BZ22W1TOBO1
Hersteller: Infineon Technologies
Description: REFERENCE BOARD FOR ICE5BR2280BZ
Power - Output: 22 W
Outputs and Type: 3, Isolated
Main Purpose: AC/DC, Primary Side
Supplied Contents: Board(s)
Utilized IC / Part: ICE5BR2280BZ
Board Type: Fully Populated
Regulator Topology: Flyback
Current - Output: 1.4A, 300mA, 150mA
Voltage - Input: 85 ~ 264 VAC
Voltage - Output: 5V, 12V, 15V
Packaging: Bulk
auf Bestellung 3 Stücke:
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1+212.72 EUR
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REF5AR2280CZ22W1TOBO1 Infineon-Reference_board_REF_5AR2280CZ_22W1-ApplicationNotes-v01_00-EN.pdf?fileId=8ac78c8c80f4d329018189f602721582
REF5AR2280CZ22W1TOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR ICE5AR2280CZ
Contents: Board(s)
Power - Output: 22W
Outputs and Type: 3 Isolated Outputs
Main Purpose: AC/DC, Primary Side
Supplied Contents: Board(s)
Utilized IC / Part: ICE5AR2280CZ
Board Type: Fully Populated
Regulator Topology: Flyback
Current - Output: 1.4A, 300mA, 150mA
Voltage - Input: 85 ~ 264 VAC
Voltage - Output: 5V, 12V, 15V
Packaging: Bulk
auf Bestellung 3 Stücke:
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AnzahlPrivatkunde
1+190.97 EUR
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IPT210N25NFDATMA1 Infineon-IPT210N25NFD-DS-v02_00-EN.pdf?fileId=5546d462533600a401537a8be9c171f2
IPT210N25NFDATMA1
Hersteller: Infineon Technologies
Description: MV POWER MOS
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 125 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-HSOF-8-1
Vgs(th) (Max) @ Id: 4V @ 267µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 69A, 10V
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPT210N25NFDATMA1 Infineon-IPT210N25NFD-DS-v02_00-EN.pdf?fileId=5546d462533600a401537a8be9c171f2
IPT210N25NFDATMA1
Hersteller: Infineon Technologies
Description: MV POWER MOS
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 125 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-HSOF-8-1
Vgs(th) (Max) @ Id: 4V @ 267µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 69A, 10V
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
auf Bestellung 1684 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+18.1 EUR
10+12.39 EUR
100+9.17 EUR
500+7.81 EUR
1000+7.58 EUR
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