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CY7C1325G-133AXC CY7C1325G-133AXC Infineon Technologies Infineon-CY7C1325G_4-Mbit_(256_K_18)_Flow-Through_Sync_SRAM-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec43033399b Description: IC SRAM 4.5MBIT PAR 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.15V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Part Status: Active
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 256K x 18
DigiKey Programmable: Not Verified
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CY7C1325G-133AXCT CY7C1325G-133AXCT Infineon Technologies Infineon-CY7C1325G_4-Mbit_(256_K_18)_Flow-Through_Sync_SRAM-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec43033399b Description: IC SRAM 4.5MBIT PAR 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.15V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Part Status: Active
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 256K x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1325G-133AXCT CY7C1325G-133AXCT Infineon Technologies Infineon-CY7C1325G_4-Mbit_(256_K_18)_Flow-Through_Sync_SRAM-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec43033399b Description: IC SRAM 4.5MBIT PAR 100TQFP
Packaging: Cut Tape (CT)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.15V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Part Status: Active
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 256K x 18
DigiKey Programmable: Not Verified
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MB2144-223-01 Infineon Technologies Description: DEV KIT TOOL KIT PWR MGMT
Packaging: Box
For Use With/Related Products: MB2144-223
Accessory Type: Probe Header
Part Status: Obsolete
Produkt ist nicht verfügbar
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CYUSB2024-BZXI CYUSB2024-BZXI Infineon Technologies download Description: IC USB CTLR
Packaging: Tray
Package / Case: 121-TFBGA
Mounting Type: Surface Mount
Interface: I2C, I2S, MMC/SD, SPI, UART, USB
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.15V ~ 1.25V
Controller Series: CYUSB
Applications: SD2™ USB and Mass Storage Peripheral Controller
Core Processor: ARM9®
Supplier Device Package: 121-FBGA (10x10)
Part Status: Active
Number of I/O: 59
DigiKey Programmable: Not Verified
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IPW60R180C7XKSA1 IPW60R180C7XKSA1 Infineon Technologies Infineon-IPW60R180C7-DS-v02_00-EN.pdf?fileId=5546d4624cb7f111014d4c8a4af94001 Description: MOSFET N-CH 600V 13A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.3A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 260µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
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IPW60R018CFD7XKSA1 IPW60R018CFD7XKSA1 Infineon Technologies Infineon-IPW60R018CFD7-DS-v02_00-EN.pdf?fileId=5546d46262b31d2e01635e133c12291d Description: MOSFET N CH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 58.2A, 10V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.91mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 251 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9901 pF @ 400 V
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IPZA60R024P7XKSA1 IPZA60R024P7XKSA1 Infineon Technologies Infineon-IPZA60R024P7-DS-v02_00-EN.pdf?fileId=5546d462696dbf120169b44b73b44837 Description: MOSFET N-CH 600V 101A TO247-4-3
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 42A, 10V
Power Dissipation (Max): 291W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.03mA
Supplier Device Package: PG-TO247-4-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7144 pF @ 400 V
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IPP60R210CFD7XKSA1 IPP60R210CFD7XKSA1 Infineon Technologies Infineon-IPP60R210CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46262b31d2e01633ab586a43b16 Description: MOSFET N CH
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 240µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
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IPP60R080P7XKSA1 IPP60R080P7XKSA1 Infineon Technologies Infineon-IPP60R080P7-DS-v02_00-EN.pdf?fileId=5546d4625acbae4c015accfa82cc0266 Description: MOSFET N-CH 650V 37A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 11.8A, 10V
Power Dissipation (Max): 129W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 400 V
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CY14V101QS-SE108XI CY14V101QS-SE108XI Infineon Technologies Infineon-CY14V101QS_1-Mbit_(128K_8)_Quad_SPI_nvSRAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed151594d8a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC NVSRAM 1MBIT SPI 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 108 MHz
Memory Format: NVSRAM
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CY14V101QS-SE108XQ CY14V101QS-SE108XQ Infineon Technologies Infineon-CY14V101QS_1-Mbit_(128K_8)_Quad_SPI_nvSRAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed151594d8a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC NVSRAM 1MBIT SPI 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 108 MHz
Memory Format: NVSRAM
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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25+22.79 EUR
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CY14V101QS-SE108XIT CY14V101QS-SE108XIT Infineon Technologies Infineon-CY14V101QS_1-Mbit_(128K_8)_Quad_SPI_nvSRAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed151594d8a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC NVSRAM 1MBIT SPI 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 108 MHz
Memory Format: NVSRAM
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CY14V101QS-SE108XQT CY14V101QS-SE108XQT Infineon Technologies Infineon-CY14V101QS_1-Mbit_(128K_8)_Quad_SPI_nvSRAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed151594d8a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC NVSRAM 1MBIT SPI 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 108 MHz
Memory Format: NVSRAM
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRFS4010TRRPBF IRFS4010TRRPBF Infineon Technologies irfs4010pbf.pdf?fileId=5546d462533600a401535636cbd72187 Description: MOSFET N-CH 100V 180A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 106A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9575 pF @ 50 V
Produkt ist nicht verfügbar
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BCR 158 B6327 BCR 158 B6327 Infineon Technologies bcr158series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301144022a59b02cc Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
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AUIRF7319QTR AUIRF7319QTR Infineon Technologies AUIRF7319Q.pdf Description: MOSFET N/P-CH 30V 6.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A, 4.9A
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
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PVN012AS-TPBF PVN012AS-TPBF Infineon Technologies pvn012apbf.pdf?fileId=5546d462533600a401535683f9ec2950 Description: SSR RELAY SPST-NO 4A 0-20V
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 4 A
Approval Agency: UL
Supplier Device Package: 6-SMT
Part Status: Obsolete
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 50 mOhms
Produkt ist nicht verfügbar
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CY8C4147LQS-S253T Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8 Description: IC MCU 32BIT 128KB FLASH 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LCD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 40-QFN (6x6)
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
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TC397XP256F300SBDLXUMA1 TC397XP256F300SBDLXUMA1 Infineon Technologies Infineon-TC39x-DataSheet-v01_02-EN.pdf?fileId=5546d462712ef9b7017140bc3416145f Description: IC MCU 32BIT 16MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 6.75M x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1M x 8
Core Processor: TriCore™
Data Converters: A/D 76 SAR, Sigma-Delta
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I²S, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-10
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 1000 Stücke:
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1000+332.20 EUR
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TC397XP256F300SBDLXUMA1 TC397XP256F300SBDLXUMA1 Infineon Technologies Infineon-TC39x-DataSheet-v01_02-EN.pdf?fileId=5546d462712ef9b7017140bc3416145f Description: IC MCU 32BIT 16MB FLASH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 6.75M x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1M x 8
Core Processor: TriCore™
Data Converters: A/D 76 SAR, Sigma-Delta
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I²S, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-10
Part Status: Active
DigiKey Programmable: Not Verified
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AUIRLR2905ZTRL AUIRLR2905ZTRL Infineon Technologies AUIRLR2905Z.pdf Description: MOSFET N-CH 55V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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CYBT-263064-02 CYBT-263064-02 Infineon Technologies Infineon-CYBT-273063-02_CYBT-263064-02_CYBT-263065-02_EZ-BT_MODULE_(PRELIMINARY)-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea1d1c72f6 Description: RF TXRX MOD BT ISM>1GHZU.FL SMD
Packaging: Tape & Reel (TR)
Package / Case: 37-SMD Module
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 176kB RAM
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.71V ~ 3.3V
Power - Output: 15dBm
Data Rate: 2Mbps
Protocol: Bluetooth v5.0
Current - Receiving: 5.9mA
Current - Transmitting: 5.8mA
Antenna Type: Antenna Not Included, U.FL
Utilized IC / Part: CYW20819
Modulation: GFSK
RF Family/Standard: Bluetooth, General ISM > 1GHz
Serial Interfaces: I2C, SPI, UART
Part Status: Active
Produkt ist nicht verfügbar
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CYBT-263065-02 CYBT-263065-02 Infineon Technologies Infineon-CYBT-273063-02_CYBT-263064-02_CYBT-263065-02_EZ-BT_MODULE_(PRELIMINARY)-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea1d1c72f6 Description: RF TXRX MOD BT ISM>1GHZU.FL SMD
Packaging: Tape & Reel (TR)
Package / Case: 35-SMD Module
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 176kB RAM
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.71V ~ 3.3V
Power - Output: 15dBm
Data Rate: 2Mbps
Protocol: Bluetooth v5.0
Current - Receiving: 5.9mA
Current - Transmitting: 5.8mA
Antenna Type: Antenna Not Included, U.FL
Utilized IC / Part: CYW20819
Modulation: GFSK
RF Family/Standard: Bluetooth, General ISM > 1GHz
Serial Interfaces: I2C, SPI, UART
Part Status: Active
Produkt ist nicht verfügbar
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MB39A130APFT-G-BND-ERE1 MB39A130APFT-G-BND-ERE1 Infineon Technologies download Description: IC REG CTRLR BUCK 24TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-TFSOP (0.173", 4.40mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 780kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 4.5V ~ 25V
Supplier Device Package: 24-TSSOP
Synchronous Rectifier: Yes
Control Features: Current Limit, Power Good, Soft Start
Output Phases: 1
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 1
Produkt ist nicht verfügbar
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MB39A130APFT-G-BND-ERE1 MB39A130APFT-G-BND-ERE1 Infineon Technologies download Description: IC REG CTRLR BUCK 24TSSOP
Packaging: Cut Tape (CT)
Package / Case: 24-TFSOP (0.173", 4.40mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 780kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 4.5V ~ 25V
Supplier Device Package: 24-TSSOP
Synchronous Rectifier: Yes
Control Features: Current Limit, Power Good, Soft Start
Output Phases: 1
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 1
Produkt ist nicht verfügbar
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PTFA220081MV4S500XUMA1 Infineon Technologies PTFA220081M_Rev6_7-18-17.pdf Description: IC AMP RF LDMOS 10-SON
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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FF8MR12W1M1HB11BPSA1 FF8MR12W1M1HB11BPSA1 Infineon Technologies Infineon-FF8MR12W1M1H_B11-DataSheet-v00_30-EN.pdf?fileId=8ac78c8c8b6555fe018b72791dec7c06 Description: MOSFET 1200V AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Supplier Device Package: AG-EASY1B
Part Status: Active
auf Bestellung 37 Stücke:
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FF17MR12W1M1HB70BPSA1 FF17MR12W1M1HB70BPSA1 Infineon Technologies Infineon-FF17MR12W1M1H_B70-DataSheet-v00_20-EN.pdf?fileId=8ac78c8c8779172a0188201359d2742d Description: MOSFET 1200V AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Supplier Device Package: AG-EASY1B
Part Status: Active
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DF11MR12W1M1HFB67BPSA1 DF11MR12W1M1HFB67BPSA1 Infineon Technologies DF11MR12W1M1HF_B67_Rev0.10_11-24-22.pdf Description: MOSFET 1200V AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Supplier Device Package: AG-EASY1B
Part Status: Active
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FF17MR12W1M1HPB11BPSA1 FF17MR12W1M1HPB11BPSA1 Infineon Technologies Infineon-FF17MR12W1M1HP_B11-DataSheet-v00_30-EN.pdf?fileId=8ac78c8c8779172a0188201303c57421 Description: MOSFET 1200V AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Supplier Device Package: AG-EASY1B
Part Status: Active
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FF17MR12W1M1HB11BPSA1 FF17MR12W1M1HB11BPSA1 Infineon Technologies Infineon-FF17MR12W1M1H_B11-DataSheet-v00_30-EN.pdf?fileId=8ac78c8c8779172a01882012a9ea7415 Description: MOSFET 1200V AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Supplier Device Package: AG-EASY1B
Part Status: Active
auf Bestellung 13 Stücke:
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CY90347DASPFV-GS-469E1 CY90347DASPFV-GS-469E1 Infineon Technologies Infineon-F2MC-16LX_MB90350E_Series_16-bit_Microcontrollers-AdditionalTechnicalInformation-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edd6b7d61d6 Description: IC MCU 16BIT 128KB MROM 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 16x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, LINbus, SCI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Obsolete
Number of I/O: 82
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BSZ0503NSIATMA1 BSZ0503NSIATMA1 Infineon Technologies Infineon-BSZ0503NSI-DS-v02_00-EN.pdf?fileId=5546d4624f205c9a014f3c2d37301ce7 Description: MOSFET N-CH 30V 20A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
Produkt ist nicht verfügbar
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BSZ0503NSIATMA1 BSZ0503NSIATMA1 Infineon Technologies Infineon-BSZ0503NSI-DS-v02_00-EN.pdf?fileId=5546d4624f205c9a014f3c2d37301ce7 Description: MOSFET N-CH 30V 20A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
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8+2.34 EUR
12+1.47 EUR
100+0.98 EUR
500+0.77 EUR
1000+0.70 EUR
2000+0.64 EUR
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IPB034N06N3GATMA2 Infineon Technologies Infineon-IPB034N06N3%20G-DataSheet-v02_00-EN.pdf?fileId=5546d46276c4f5350176f56e2d130d41 Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 93µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
Produkt ist nicht verfügbar
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FP25R12KT4B16BPSA1 FP25R12KT4B16BPSA1 Infineon Technologies Infineon-FP25R12KT4-DS-v03_00-en_de.pdf?fileId=db3a30431ed1d7b2011f697849180e4c Description: LOW POWER ECONO AG-ECONO2B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 160 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
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FP75R07N2E4BPSA1 FP75R07N2E4BPSA1 Infineon Technologies Infineon-FP75R07N2E4-DS-v03_00-EN.pdf?fileId=db3a3043315daf440131612c3f1341df Description: LOW POWER ECONO AG-ECONO2B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
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S29GL256S90DHSS33 S29GL256S90DHSS33 Infineon Technologies Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY3696 Infineon Technologies download Description: SOCKET ADAPTER FOR CY2077FS
Packaging: Bulk
For Use With/Related Products: CY2077FS
Accessory Type: Socket Adapter
Part Status: Obsolete
Produkt ist nicht verfügbar
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D2200N20TVFXPSA1 D2200N20TVFXPSA1 Infineon Technologies D2200N.pdf Description: DIODE GEN PURP 2200A D7526K0-1
Packaging: Tray
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2200A
Supplier Device Package: BG-D7526K0-1
Operating Temperature - Junction: -40°C ~ 160°C
Part Status: Last Time Buy
Current - Reverse Leakage @ Vr: 150 mA @ 2000 V
Produkt ist nicht verfügbar
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CY25560SXC CY25560SXC Infineon Technologies Infineon-CY25560_SPREAD_SPECTRUM_CLOCK_GENERATOR-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec5cf783bf3 Description: IC CLK/FREQ SYNTH 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 100MHz
Type: Clock/Frequency Synthesizer, Frequency Modulator, Spread Spectrum Clock Generator
Input: Clock, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.97V ~ 3.63V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: Yes/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
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2+16.74 EUR
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97+11.14 EUR
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291+10.57 EUR
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FF1200R17KP4B2NOSA2 FF1200R17KP4B2NOSA2 Infineon Technologies Infineon-FF1200R17KP4_B2-DS-v03_01-EN.pdf?fileId=db3a304320d39d590122175b5e4b07f5 Description: IGBT MODULE 1700V 1200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: No
Supplier Device Package: AG-PRIME2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1700 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1400 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 98 nF @ 25 V
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S25HL512TDPNHV010 S25HL512TDPNHV010 Infineon Technologies en?dcId=8a8181663431cb50013431cb500b0000&downloadTitle=Infineon-S25HS256T_S25HS512T_S25HS01GT_S25HL256T_S25HL512T_S25HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_Quad_SPI_1_8V_3-DataSheet-v68_00-EN.pdf&download=L2RnZGwvSW5maW5lb24 Description: IC FLASH 512MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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FF200R12KE3B2HOSA1 FF200R12KE3B2HOSA1 Infineon Technologies Infineon-FF200R12KE3-DS-v03_01-en_cn.pdf?fileId=db3a30433dcf2fc4013dd01c80660219 Description: IGBT MOD 1200V 295A 1050W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 295 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
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CY7112 CY7112 Infineon Technologies Infineon-CY7112_EZ-PD_PMG1-S2_Prototyping_Kit_Release_Notes-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0f039dbb1b30&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: CY7112 EZ-PD PMG1-S2 PROTOTYPING
Packaging: Box
Function: USB Type-C® Power Delivery (PD)
Type: Power Management
Utilized IC / Part: EZ-PD PMG1-S2
Supplied Contents: Board(s), Cable(s), Accessories
Primary Attributes: USB PD 3.0
Embedded: Yes, MCU
Part Status: Active
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CY9BF416RPMC-G-JNE2 CY9BF416RPMC-G-JNE2 Infineon Technologies download Description: IC MCU 32BIT 512KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Part Status: Active
Number of I/O: 103
DigiKey Programmable: Not Verified
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2+14.31 EUR
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25+12.33 EUR
84+10.71 EUR
252+10.23 EUR
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BSF450NE7NH3XUMA1 BSF450NE7NH3XUMA1 Infineon Technologies Infineon-BSF450NE7NH3-DS-v02_02-EN.pdf?fileId=db3a30433a047ba0013a687e2ae403da Description: MOSFET N-CH 75V 5A/15A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 8A, 10V
Power Dissipation (Max): 2.2W (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 8µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 37.5 V
Produkt ist nicht verfügbar
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BSF450NE7NH3XUMA1 BSF450NE7NH3XUMA1 Infineon Technologies Infineon-BSF450NE7NH3-DS-v02_02-EN.pdf?fileId=db3a30433a047ba0013a687e2ae403da Description: MOSFET N-CH 75V 5A/15A 2WDSON
Packaging: Cut Tape (CT)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 8A, 10V
Power Dissipation (Max): 2.2W (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 8µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 37.5 V
auf Bestellung 4300 Stücke:
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7+2.60 EUR
10+2.16 EUR
100+1.72 EUR
500+1.45 EUR
1000+1.23 EUR
2000+1.17 EUR
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IRS2001SPBF IRS2001SPBF Infineon Technologies irs2001pbf.pdf?fileId=5546d462533600a401535675a760277e Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IAUT300N10S5N014ATMA1 IAUT300N10S5N014ATMA1 Infineon Technologies Infineon-IAUT300N10S5N014-DataSheet-v01_01-EN.pdf?fileId=5546d46277921c32017795c1685a4680 Description: MOSFET_(75V 120V( PG-HSOF-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tj)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16011 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3130 Stücke:
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2+8.92 EUR
10+6.46 EUR
100+4.70 EUR
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IAUT300N08S5N011ATMA1 IAUT300N08S5N011ATMA1 Infineon Technologies Infineon-IAUT300N08S5N011-DataSheet-v01_00-EN.pdf?fileId=5546d46277921c32017795d395544683 Description: MOSFET_(75V 120V( PG-HSOF-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 410A (Tj)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 683 Stücke:
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2+9.29 EUR
10+6.23 EUR
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500+4.44 EUR
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IAUS300N10S5N014ATMA1 IAUS300N10S5N014ATMA1 Infineon Technologies Infineon-IAUS300N10S5N014-DataSheet-v01_01-EN.pdf?fileId=5546d46277921c32017795c159b7467d Description: MOSFET_(75V 120V( PG-HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tj)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16011 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1787 Stücke:
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10+7.13 EUR
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IAUTN12S5N018GATMA1 IAUTN12S5N018GATMA1 Infineon Technologies Infineon-IAUTN12S5N018G-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c86919021018712f65ab14212 Description: MOSFET_(120V 300V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drain to Source Voltage (Vdss): 120 V
auf Bestellung 1276 Stücke:
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100+6.65 EUR
500+5.92 EUR
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IAUTN12S5N017ATMA1 IAUTN12S5N017ATMA1 Infineon Technologies Infineon-IAUTN12S5N017-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c86919021018712f66aa24215 Description: MOSFET_(120V 300V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drain to Source Voltage (Vdss): 120 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
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2000+5.02 EUR
Mindestbestellmenge: 2000
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IAUTN12S5N017ATMA1 IAUTN12S5N017ATMA1 Infineon Technologies Infineon-IAUTN12S5N017-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c86919021018712f66aa24215 Description: MOSFET_(120V 300V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drain to Source Voltage (Vdss): 120 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3739 Stücke:
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2+11.16 EUR
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2SP0430T2A0CFF18R17NPSA1 Infineon Technologies Description: MODULE GATE DRIVER
Packaging: Tray
Part Status: Obsolete
Produkt ist nicht verfügbar
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CY9AF141MAPMC1-G-JNE2 Infineon Technologies Description: MULTI-MARKET MCUS
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I²C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (14x14)
Part Status: Active
Number of I/O: 66
Produkt ist nicht verfügbar
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CYBT-343026-PROG CYBT-343026-PROG Infineon Technologies Infineon-CYBT-343026-PROG_EZ-BT(TM)_WICED_MODULE_PROGRAMMING_KIT-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0f01497918a0 Description: MODULE KIT
Packaging: Bulk
For Use With/Related Products: EZ-BT WICED Modules
Type: Programmer (Universal Out-of-Circuit)
Contents: Board(s)
Part Status: Active
auf Bestellung 2 Stücke:
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1+515.77 EUR
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CY8C4244PVQ-442 CY8C4244PVQ-442 Infineon Technologies Infineon-PSOC_4_PSOC_4200_FAMILY_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec80ee2400e Description: IC MCU 32BIT 16KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Part Status: Active
Number of I/O: 24
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1325G-133AXC Infineon-CY7C1325G_4-Mbit_(256_K_18)_Flow-Through_Sync_SRAM-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec43033399b
CY7C1325G-133AXC
Hersteller: Infineon Technologies
Description: IC SRAM 4.5MBIT PAR 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.15V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Part Status: Active
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 256K x 18
DigiKey Programmable: Not Verified
auf Bestellung 132 Stücke:
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Anzahl Preis
50+10.10 EUR
Mindestbestellmenge: 50
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CY7C1325G-133AXCT Infineon-CY7C1325G_4-Mbit_(256_K_18)_Flow-Through_Sync_SRAM-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec43033399b
CY7C1325G-133AXCT
Hersteller: Infineon Technologies
Description: IC SRAM 4.5MBIT PAR 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.15V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Part Status: Active
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 256K x 18
DigiKey Programmable: Not Verified
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CY7C1325G-133AXCT Infineon-CY7C1325G_4-Mbit_(256_K_18)_Flow-Through_Sync_SRAM-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec43033399b
CY7C1325G-133AXCT
Hersteller: Infineon Technologies
Description: IC SRAM 4.5MBIT PAR 100TQFP
Packaging: Cut Tape (CT)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.15V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Part Status: Active
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 256K x 18
DigiKey Programmable: Not Verified
auf Bestellung 709 Stücke:
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Anzahl Preis
2+14.66 EUR
10+13.49 EUR
25+13.21 EUR
50+13.16 EUR
100+11.81 EUR
250+11.45 EUR
Mindestbestellmenge: 2
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MB2144-223-01
Hersteller: Infineon Technologies
Description: DEV KIT TOOL KIT PWR MGMT
Packaging: Box
For Use With/Related Products: MB2144-223
Accessory Type: Probe Header
Part Status: Obsolete
Produkt ist nicht verfügbar
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CYUSB2024-BZXI download
CYUSB2024-BZXI
Hersteller: Infineon Technologies
Description: IC USB CTLR
Packaging: Tray
Package / Case: 121-TFBGA
Mounting Type: Surface Mount
Interface: I2C, I2S, MMC/SD, SPI, UART, USB
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.15V ~ 1.25V
Controller Series: CYUSB
Applications: SD2™ USB and Mass Storage Peripheral Controller
Core Processor: ARM9®
Supplier Device Package: 121-FBGA (10x10)
Part Status: Active
Number of I/O: 59
DigiKey Programmable: Not Verified
auf Bestellung 1680 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.15 EUR
10+15.12 EUR
25+14.11 EUR
168+13.68 EUR
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IPW60R180C7XKSA1 Infineon-IPW60R180C7-DS-v02_00-EN.pdf?fileId=5546d4624cb7f111014d4c8a4af94001
IPW60R180C7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 13A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.3A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 260µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
auf Bestellung 192 Stücke:
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Anzahl Preis
3+6.28 EUR
30+3.43 EUR
120+2.97 EUR
Mindestbestellmenge: 3
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IPW60R018CFD7XKSA1 Infineon-IPW60R018CFD7-DS-v02_00-EN.pdf?fileId=5546d46262b31d2e01635e133c12291d
IPW60R018CFD7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N CH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 58.2A, 10V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.91mA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 251 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9901 pF @ 400 V
auf Bestellung 607 Stücke:
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Anzahl Preis
1+28.30 EUR
30+17.56 EUR
120+15.83 EUR
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IPZA60R024P7XKSA1 Infineon-IPZA60R024P7-DS-v02_00-EN.pdf?fileId=5546d462696dbf120169b44b73b44837
IPZA60R024P7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 101A TO247-4-3
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 42A, 10V
Power Dissipation (Max): 291W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.03mA
Supplier Device Package: PG-TO247-4-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7144 pF @ 400 V
Produkt ist nicht verfügbar
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IPP60R210CFD7XKSA1 Infineon-IPP60R210CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46262b31d2e01633ab586a43b16
IPP60R210CFD7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N CH
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 240µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
auf Bestellung 125 Stücke:
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Anzahl Preis
4+5.39 EUR
50+2.70 EUR
100+2.44 EUR
Mindestbestellmenge: 4
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IPP60R080P7XKSA1 Infineon-IPP60R080P7-DS-v02_00-EN.pdf?fileId=5546d4625acbae4c015accfa82cc0266
IPP60R080P7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 37A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 11.8A, 10V
Power Dissipation (Max): 129W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 400 V
Produkt ist nicht verfügbar
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CY14V101QS-SE108XI Infineon-CY14V101QS_1-Mbit_(128K_8)_Quad_SPI_nvSRAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed151594d8a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY14V101QS-SE108XI
Hersteller: Infineon Technologies
Description: IC NVSRAM 1MBIT SPI 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 108 MHz
Memory Format: NVSRAM
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
auf Bestellung 230 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+24.96 EUR
10+23.11 EUR
25+22.79 EUR
50+22.51 EUR
100+19.72 EUR
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CY14V101QS-SE108XQ Infineon-CY14V101QS_1-Mbit_(128K_8)_Quad_SPI_nvSRAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed151594d8a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY14V101QS-SE108XQ
Hersteller: Infineon Technologies
Description: IC NVSRAM 1MBIT SPI 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 108 MHz
Memory Format: NVSRAM
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
auf Bestellung 230 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+24.96 EUR
10+23.11 EUR
25+22.79 EUR
50+22.51 EUR
100+19.72 EUR
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CY14V101QS-SE108XIT Infineon-CY14V101QS_1-Mbit_(128K_8)_Quad_SPI_nvSRAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed151594d8a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY14V101QS-SE108XIT
Hersteller: Infineon Technologies
Description: IC NVSRAM 1MBIT SPI 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 108 MHz
Memory Format: NVSRAM
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY14V101QS-SE108XQT Infineon-CY14V101QS_1-Mbit_(128K_8)_Quad_SPI_nvSRAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed151594d8a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY14V101QS-SE108XQT
Hersteller: Infineon Technologies
Description: IC NVSRAM 1MBIT SPI 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 108 MHz
Memory Format: NVSRAM
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRFS4010TRRPBF irfs4010pbf.pdf?fileId=5546d462533600a401535636cbd72187
IRFS4010TRRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 180A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 106A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9575 pF @ 50 V
Produkt ist nicht verfügbar
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BCR 158 B6327 bcr158series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301144022a59b02cc
BCR 158 B6327
Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
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AUIRF7319QTR AUIRF7319Q.pdf
AUIRF7319QTR
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 30V 6.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A, 4.9A
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
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PVN012AS-TPBF pvn012apbf.pdf?fileId=5546d462533600a401535683f9ec2950
PVN012AS-TPBF
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 4A 0-20V
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 4 A
Approval Agency: UL
Supplier Device Package: 6-SMT
Part Status: Obsolete
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 50 mOhms
Produkt ist nicht verfügbar
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CY8C4147LQS-S253T Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LCD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 40-QFN (6x6)
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC397XP256F300SBDLXUMA1 Infineon-TC39x-DataSheet-v01_02-EN.pdf?fileId=5546d462712ef9b7017140bc3416145f
TC397XP256F300SBDLXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 6.75M x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1M x 8
Core Processor: TriCore™
Data Converters: A/D 76 SAR, Sigma-Delta
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I²S, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-10
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+332.20 EUR
Mindestbestellmenge: 1000
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TC397XP256F300SBDLXUMA1 Infineon-TC39x-DataSheet-v01_02-EN.pdf?fileId=5546d462712ef9b7017140bc3416145f
TC397XP256F300SBDLXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16MB FLASH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 6.75M x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1M x 8
Core Processor: TriCore™
Data Converters: A/D 76 SAR, Sigma-Delta
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I²C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I²S, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-10
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+357.16 EUR
10+342.07 EUR
25+334.52 EUR
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AUIRLR2905ZTRL AUIRLR2905Z.pdf
AUIRLR2905ZTRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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CYBT-263064-02 Infineon-CYBT-273063-02_CYBT-263064-02_CYBT-263065-02_EZ-BT_MODULE_(PRELIMINARY)-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea1d1c72f6
CYBT-263064-02
Hersteller: Infineon Technologies
Description: RF TXRX MOD BT ISM>1GHZU.FL SMD
Packaging: Tape & Reel (TR)
Package / Case: 37-SMD Module
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 176kB RAM
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.71V ~ 3.3V
Power - Output: 15dBm
Data Rate: 2Mbps
Protocol: Bluetooth v5.0
Current - Receiving: 5.9mA
Current - Transmitting: 5.8mA
Antenna Type: Antenna Not Included, U.FL
Utilized IC / Part: CYW20819
Modulation: GFSK
RF Family/Standard: Bluetooth, General ISM > 1GHz
Serial Interfaces: I2C, SPI, UART
Part Status: Active
Produkt ist nicht verfügbar
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CYBT-263065-02 Infineon-CYBT-273063-02_CYBT-263064-02_CYBT-263065-02_EZ-BT_MODULE_(PRELIMINARY)-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea1d1c72f6
CYBT-263065-02
Hersteller: Infineon Technologies
Description: RF TXRX MOD BT ISM>1GHZU.FL SMD
Packaging: Tape & Reel (TR)
Package / Case: 35-SMD Module
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 176kB RAM
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.71V ~ 3.3V
Power - Output: 15dBm
Data Rate: 2Mbps
Protocol: Bluetooth v5.0
Current - Receiving: 5.9mA
Current - Transmitting: 5.8mA
Antenna Type: Antenna Not Included, U.FL
Utilized IC / Part: CYW20819
Modulation: GFSK
RF Family/Standard: Bluetooth, General ISM > 1GHz
Serial Interfaces: I2C, SPI, UART
Part Status: Active
Produkt ist nicht verfügbar
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MB39A130APFT-G-BND-ERE1 download
MB39A130APFT-G-BND-ERE1
Hersteller: Infineon Technologies
Description: IC REG CTRLR BUCK 24TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-TFSOP (0.173", 4.40mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 780kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 4.5V ~ 25V
Supplier Device Package: 24-TSSOP
Synchronous Rectifier: Yes
Control Features: Current Limit, Power Good, Soft Start
Output Phases: 1
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 1
Produkt ist nicht verfügbar
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MB39A130APFT-G-BND-ERE1 download
MB39A130APFT-G-BND-ERE1
Hersteller: Infineon Technologies
Description: IC REG CTRLR BUCK 24TSSOP
Packaging: Cut Tape (CT)
Package / Case: 24-TFSOP (0.173", 4.40mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 780kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 4.5V ~ 25V
Supplier Device Package: 24-TSSOP
Synchronous Rectifier: Yes
Control Features: Current Limit, Power Good, Soft Start
Output Phases: 1
Clock Sync: No
Part Status: Obsolete
Number of Outputs: 1
Produkt ist nicht verfügbar
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PTFA220081MV4S500XUMA1 PTFA220081M_Rev6_7-18-17.pdf
Hersteller: Infineon Technologies
Description: IC AMP RF LDMOS 10-SON
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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FF8MR12W1M1HB11BPSA1 Infineon-FF8MR12W1M1H_B11-DataSheet-v00_30-EN.pdf?fileId=8ac78c8c8b6555fe018b72791dec7c06
FF8MR12W1M1HB11BPSA1
Hersteller: Infineon Technologies
Description: MOSFET 1200V AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Supplier Device Package: AG-EASY1B
Part Status: Active
auf Bestellung 37 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+166.21 EUR
24+138.03 EUR
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FF17MR12W1M1HB70BPSA1 Infineon-FF17MR12W1M1H_B70-DataSheet-v00_20-EN.pdf?fileId=8ac78c8c8779172a0188201359d2742d
FF17MR12W1M1HB70BPSA1
Hersteller: Infineon Technologies
Description: MOSFET 1200V AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Supplier Device Package: AG-EASY1B
Part Status: Active
auf Bestellung 26 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+147.14 EUR
24+119.28 EUR
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DF11MR12W1M1HFB67BPSA1 DF11MR12W1M1HF_B67_Rev0.10_11-24-22.pdf
DF11MR12W1M1HFB67BPSA1
Hersteller: Infineon Technologies
Description: MOSFET 1200V AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Supplier Device Package: AG-EASY1B
Part Status: Active
auf Bestellung 38 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+116.02 EUR
24+110.06 EUR
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FF17MR12W1M1HPB11BPSA1 Infineon-FF17MR12W1M1HP_B11-DataSheet-v00_30-EN.pdf?fileId=8ac78c8c8779172a0188201303c57421
FF17MR12W1M1HPB11BPSA1
Hersteller: Infineon Technologies
Description: MOSFET 1200V AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Supplier Device Package: AG-EASY1B
Part Status: Active
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+161.30 EUR
10+132.35 EUR
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FF17MR12W1M1HB11BPSA1 Infineon-FF17MR12W1M1H_B11-DataSheet-v00_30-EN.pdf?fileId=8ac78c8c8779172a01882012a9ea7415
FF17MR12W1M1HB11BPSA1
Hersteller: Infineon Technologies
Description: MOSFET 1200V AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Supplier Device Package: AG-EASY1B
Part Status: Active
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+153.45 EUR
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CY90347DASPFV-GS-469E1 Infineon-F2MC-16LX_MB90350E_Series_16-bit_Microcontrollers-AdditionalTechnicalInformation-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edd6b7d61d6
CY90347DASPFV-GS-469E1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 128KB MROM 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 16x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, LINbus, SCI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Obsolete
Number of I/O: 82
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BSZ0503NSIATMA1 Infineon-BSZ0503NSI-DS-v02_00-EN.pdf?fileId=5546d4624f205c9a014f3c2d37301ce7
BSZ0503NSIATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 20A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
Produkt ist nicht verfügbar
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BSZ0503NSIATMA1 Infineon-BSZ0503NSI-DS-v02_00-EN.pdf?fileId=5546d4624f205c9a014f3c2d37301ce7
BSZ0503NSIATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 20A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
auf Bestellung 3716 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.34 EUR
12+1.47 EUR
100+0.98 EUR
500+0.77 EUR
1000+0.70 EUR
2000+0.64 EUR
Mindestbestellmenge: 8
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IPB034N06N3GATMA2 Infineon-IPB034N06N3%20G-DataSheet-v02_00-EN.pdf?fileId=5546d46276c4f5350176f56e2d130d41
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 93µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
Produkt ist nicht verfügbar
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FP25R12KT4B16BPSA1 Infineon-FP25R12KT4-DS-v03_00-en_de.pdf?fileId=db3a30431ed1d7b2011f697849180e4c
FP25R12KT4B16BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 160 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+204.71 EUR
15+189.48 EUR
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FP75R07N2E4BPSA1 Infineon-FP75R07N2E4-DS-v03_00-EN.pdf?fileId=db3a3043315daf440131612c3f1341df
FP75R07N2E4BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+103.28 EUR
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S29GL256S90DHSS33
S29GL256S90DHSS33
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY3696 download
Hersteller: Infineon Technologies
Description: SOCKET ADAPTER FOR CY2077FS
Packaging: Bulk
For Use With/Related Products: CY2077FS
Accessory Type: Socket Adapter
Part Status: Obsolete
Produkt ist nicht verfügbar
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D2200N20TVFXPSA1 D2200N.pdf
D2200N20TVFXPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 2200A D7526K0-1
Packaging: Tray
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2200A
Supplier Device Package: BG-D7526K0-1
Operating Temperature - Junction: -40°C ~ 160°C
Part Status: Last Time Buy
Current - Reverse Leakage @ Vr: 150 mA @ 2000 V
Produkt ist nicht verfügbar
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CY25560SXC Infineon-CY25560_SPREAD_SPECTRUM_CLOCK_GENERATOR-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec5cf783bf3
CY25560SXC
Hersteller: Infineon Technologies
Description: IC CLK/FREQ SYNTH 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 100MHz
Type: Clock/Frequency Synthesizer, Frequency Modulator, Spread Spectrum Clock Generator
Input: Clock, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.97V ~ 3.63V
Ratio - Input:Output: 1:1
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: Yes/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 386 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.74 EUR
10+13.05 EUR
97+11.14 EUR
194+10.76 EUR
291+10.57 EUR
Mindestbestellmenge: 2
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FF1200R17KP4B2NOSA2 Infineon-FF1200R17KP4_B2-DS-v03_01-EN.pdf?fileId=db3a304320d39d590122175b5e4b07f5
FF1200R17KP4B2NOSA2
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 1200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: No
Supplier Device Package: AG-PRIME2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1700 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1400 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 98 nF @ 25 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+1813.40 EUR
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S25HL512TDPNHV010 en?dcId=8a8181663431cb50013431cb500b0000&downloadTitle=Infineon-S25HS256T_S25HS512T_S25HS01GT_S25HL256T_S25HL512T_S25HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_Quad_SPI_1_8V_3-DataSheet-v68_00-EN.pdf&download=L2RnZGwvSW5maW5lb24
S25HL512TDPNHV010
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FF200R12KE3B2HOSA1 Infineon-FF200R12KE3-DS-v03_01-en_cn.pdf?fileId=db3a30433dcf2fc4013dd01c80660219
FF200R12KE3B2HOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 295A 1050W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 295 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+197.77 EUR
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CY7112 Infineon-CY7112_EZ-PD_PMG1-S2_Prototyping_Kit_Release_Notes-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0f039dbb1b30&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7112
Hersteller: Infineon Technologies
Description: CY7112 EZ-PD PMG1-S2 PROTOTYPING
Packaging: Box
Function: USB Type-C® Power Delivery (PD)
Type: Power Management
Utilized IC / Part: EZ-PD PMG1-S2
Supplied Contents: Board(s), Cable(s), Accessories
Primary Attributes: USB PD 3.0
Embedded: Yes, MCU
Part Status: Active
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+35.46 EUR
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CY9BF416RPMC-G-JNE2 download
CY9BF416RPMC-G-JNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Part Status: Active
Number of I/O: 103
DigiKey Programmable: Not Verified
auf Bestellung 704 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.31 EUR
10+12.94 EUR
25+12.33 EUR
84+10.71 EUR
252+10.23 EUR
504+9.33 EUR
Mindestbestellmenge: 2
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BSF450NE7NH3XUMA1 Infineon-BSF450NE7NH3-DS-v02_02-EN.pdf?fileId=db3a30433a047ba0013a687e2ae403da
BSF450NE7NH3XUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 5A/15A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 8A, 10V
Power Dissipation (Max): 2.2W (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 8µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 37.5 V
Produkt ist nicht verfügbar
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BSF450NE7NH3XUMA1 Infineon-BSF450NE7NH3-DS-v02_02-EN.pdf?fileId=db3a30433a047ba0013a687e2ae403da
BSF450NE7NH3XUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 5A/15A 2WDSON
Packaging: Cut Tape (CT)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 8A, 10V
Power Dissipation (Max): 2.2W (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 8µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 37.5 V
auf Bestellung 4300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.60 EUR
10+2.16 EUR
100+1.72 EUR
500+1.45 EUR
1000+1.23 EUR
2000+1.17 EUR
Mindestbestellmenge: 7
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IRS2001SPBF irs2001pbf.pdf?fileId=5546d462533600a401535675a760277e
IRS2001SPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IAUT300N10S5N014ATMA1 Infineon-IAUT300N10S5N014-DataSheet-v01_01-EN.pdf?fileId=5546d46277921c32017795c1685a4680
IAUT300N10S5N014ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V( PG-HSOF-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tj)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16011 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3130 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+8.92 EUR
10+6.46 EUR
100+4.70 EUR
Mindestbestellmenge: 2
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IAUT300N08S5N011ATMA1 Infineon-IAUT300N08S5N011-DataSheet-v01_00-EN.pdf?fileId=5546d46277921c32017795d395544683
IAUT300N08S5N011ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V( PG-HSOF-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 410A (Tj)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 683 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.29 EUR
10+6.23 EUR
100+4.49 EUR
500+4.44 EUR
Mindestbestellmenge: 2
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IAUS300N10S5N014ATMA1 Infineon-IAUS300N10S5N014-DataSheet-v01_01-EN.pdf?fileId=5546d46277921c32017795c159b7467d
IAUS300N10S5N014ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V( PG-HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tj)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16011 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1787 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.56 EUR
10+7.13 EUR
100+5.26 EUR
Mindestbestellmenge: 2
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IAUTN12S5N018GATMA1 Infineon-IAUTN12S5N018G-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c86919021018712f65ab14212
IAUTN12S5N018GATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(120V 300V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drain to Source Voltage (Vdss): 120 V
auf Bestellung 1276 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.31 EUR
10+9.05 EUR
100+6.65 EUR
500+5.92 EUR
Mindestbestellmenge: 2
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IAUTN12S5N017ATMA1 Infineon-IAUTN12S5N017-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c86919021018712f66aa24215
IAUTN12S5N017ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(120V 300V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drain to Source Voltage (Vdss): 120 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+5.02 EUR
Mindestbestellmenge: 2000
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IAUTN12S5N017ATMA1 Infineon-IAUTN12S5N017-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c86919021018712f66aa24215
IAUTN12S5N017ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(120V 300V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drain to Source Voltage (Vdss): 120 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3739 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.16 EUR
10+7.75 EUR
100+6.15 EUR
Mindestbestellmenge: 2
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2SP0430T2A0CFF18R17NPSA1
Hersteller: Infineon Technologies
Description: MODULE GATE DRIVER
Packaging: Tray
Part Status: Obsolete
Produkt ist nicht verfügbar
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CY9AF141MAPMC1-G-JNE2
Hersteller: Infineon Technologies
Description: MULTI-MARKET MCUS
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I²C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (14x14)
Part Status: Active
Number of I/O: 66
Produkt ist nicht verfügbar
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CYBT-343026-PROG Infineon-CYBT-343026-PROG_EZ-BT(TM)_WICED_MODULE_PROGRAMMING_KIT-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0f01497918a0
CYBT-343026-PROG
Hersteller: Infineon Technologies
Description: MODULE KIT
Packaging: Bulk
For Use With/Related Products: EZ-BT WICED Modules
Type: Programmer (Universal Out-of-Circuit)
Contents: Board(s)
Part Status: Active
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+515.77 EUR
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CY8C4244PVQ-442 Infineon-PSOC_4_PSOC_4200_FAMILY_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec80ee2400e
CY8C4244PVQ-442
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Part Status: Active
Number of I/O: 24
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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