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CY8C6247BZI-D44T CY8C6247BZI-D44T Infineon Technologies Infineon-PSoC_6_MCU_CY8C62x6_CY8C62x7-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee4c9386bff Description: IC MCU 32BIT 1MB FLASH 124VFBGA
DigiKey Programmable: Not Verified
Number of I/O: 100
Supplier Device Package: 124-VFBGA (9x9)
Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, POR, PWM, Temp Sensor, WDT
Connectivity: FIFO, I2C, LINbus, QSPI, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V
Core Size: 32-Bit Dual-Core
Data Converters: A/D 16x12b SAR, 10b Sigma-Delta; D/A 2x7/8b
Core Processor: ARM® Cortex®-M0, ARM® Cortex®-M4
EEPROM Size: 32K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 288K x 8
Program Memory Size: 1MB (1M x 8)
Speed: 100MHz, 150MHz
Mounting Type: Surface Mount
Package / Case: 124-VFBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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S25HS512TFAMHI010 S25HS512TFAMHI010 Infineon Technologies 002-12345_rev-AF.pdf Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S26KS256SDPBHI020 S26KS256SDPBHI020 Infineon Technologies Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Description: IC FLASH 256MBIT PAR 24FBGA
DigiKey Programmable: Not Verified
Memory Organization: 32M x 8
Access Time: 96 ns
Memory Interface: Parallel
Supplier Device Package: 24-FBGA (6x8)
Memory Format: FLASH
Clock Frequency: 166 MHz
Technology: FLASH - NOR
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Packaging: Tray
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IDH04G65C6XKSA1 IDH04G65C6XKSA1 Infineon Technologies Infineon-IDH04G65C6-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015ccf519a3174d7 Description: DIODE SIL CARB 650V 12A PGTO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 205pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 4 A
Current - Reverse Leakage @ Vr: 14 µA @ 420 V
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UIOSTICKTOBO1 UIOSTICKTOBO1 Infineon Technologies Infineon-2014-04-01_uIO-Stick_PEK-Light_Pinout-ATI-v01_00-EN.pdf?fileId=5546d46265487f7b016557506a9b300e Description: UIO-STICK CONTROL BOARDS/KITS
Packaging: Box
Accessory Type: Interface Board
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TLS850F3TUV50ATMA1 TLS850F3TUV50ATMA1 Infineon Technologies Infineon-TLS850F3TUV50-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8929aa4d0189daf49d383c09 Description: IC REG LINEAR OPTIREG
Packaging: Cut Tape (CT)
Package / Case: TO-252-7, DPak (6 Leads + Tab)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 47 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TO252-7-1
Voltage - Output (Min/Fixed): 5V
Control Features: Delay, Inhibit, Reset Output, Watchdog
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.75V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 55 µA
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TC297TA128F300NBCKXUMA1 TC297TA128F300NBCKXUMA1 Infineon Technologies Infineon-TC29xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f Description: IC MCU 32BIT 8MB FLASH 292LFBGA
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 60x12b, 10 x Sigma-Delta
Core Processor: TriCore™
EEPROM Size: 384K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 2.75M x 8
Program Memory Size: 8MB (8M x 8)
Speed: 300MHz
Mounting Type: Surface Mount
Package / Case: 292-LFBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Number of I/O: 169
Supplier Device Package: PG-LFBGA-292-6
Peripherals: DMA, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
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TC297TA128F300NBCKXUMA1 TC297TA128F300NBCKXUMA1 Infineon Technologies Infineon-TC29xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f Description: IC MCU 32BIT 8MB FLASH 292LFBGA
DigiKey Programmable: Not Verified
Number of I/O: 169
Supplier Device Package: PG-LFBGA-292-6
Peripherals: DMA, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 60x12b, 10 x Sigma-Delta
Core Processor: TriCore™
EEPROM Size: 384K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 2.75M x 8
Program Memory Size: 8MB (8M x 8)
Speed: 300MHz
Mounting Type: Surface Mount
Package / Case: 292-LFBGA
Packaging: Cut Tape (CT)
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TC337DA32F300SAAKXUMA1 TC337DA32F300SAAKXUMA1 Infineon Technologies Infineon-TriCore_Family_BR-ProductBrochure-v01_00-EN.pdf?fileId=5546d4625d5945ed015dc81f47b436c7 Description: IC MCU 32BIT 2MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1.53K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, LINbus, QSPI, SENT
Peripherals: DMA, PWM, WDT
Supplier Device Package: PG-LFBGA-292-6
DigiKey Programmable: Not Verified
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TC337DA32F300SAAKXUMA1 TC337DA32F300SAAKXUMA1 Infineon Technologies Infineon-TriCore_Family_BR-ProductBrochure-v01_00-EN.pdf?fileId=5546d4625d5945ed015dc81f47b436c7 Description: IC MCU 32BIT 2MB FLASH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1.53K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, LINbus, QSPI, SENT
Peripherals: DMA, PWM, WDT
Supplier Device Package: PG-LFBGA-292-6
DigiKey Programmable: Not Verified
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TC399XP256F300SBDKXUMA1 TC399XP256F300SBDKXUMA1 Infineon Technologies 4_cip10520.pdf Description: IC MCU 32BIT 16MB FLASH 516LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 516-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 2.75K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1M x 8
Core Processor: TriCore™
Data Converters: A/D 100 SAR, Sigma-Delta
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-516-10
DigiKey Programmable: Not Verified
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TC397XA256F300SBDKXUMA1 TC397XA256F300SBDKXUMA1 Infineon Technologies Infineon-AURIX_TC3xx_Part2-UserManual-v01_00-EN.pdf?fileId=5546d462712ef9b701717d35f8541d94 Description: IC MCU 32BIT 16MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 6.75M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1M x 8
Core Processor: TriCore™
Data Converters: A/D 76 SAR, Sigma-Delta
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-10
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC399XX256F300SBDKXUMA1 TC399XX256F300SBDKXUMA1 Infineon Technologies 4_cip10520.pdf Description: IC MCU 32BIT 16MB FLASH 516LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 516-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 6.75M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1M x 8
Core Processor: TriCore™
Data Converters: A/D 100 SAR, Sigma-Delta
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-516-10
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC367DP64F300SAALXUMA1 TC367DP64F300SAALXUMA1 Infineon Technologies 4_cip10527.pdf Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 672K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-292-11
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC367DP64F300SAALXUMA1 TC367DP64F300SAALXUMA1 Infineon Technologies 4_cip10527.pdf Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 672K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-292-11
DigiKey Programmable: Not Verified
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S29GL256S10TFIV20 S29GL256S10TFIV20 Infineon Technologies infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
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546+16.36 EUR
1001+16.01 EUR
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TC277T64F200NDCKXUMA2 TC277T64F200NDCKXUMA2 Infineon Technologies Infineon-TC27xDC-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b4016953972c57046a Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Number of I/O: 169
DigiKey Programmable: Not Verified
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TC277T64F200SDCKXUMA2 TC277T64F200SDCKXUMA2 Infineon Technologies Infineon-TC27xDC-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b4016953972c57046a Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Number of I/O: 169
DigiKey Programmable: Not Verified
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CY91F522FSCPMC-GSE1 CY91F522FSCPMC-GSE1 Infineon Technologies Infineon-CY91520_Series_32-bit_FR81S_Microcontroller-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda0e215ba3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil Description: IC MCU 32BIT 320KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 37x12b; D/A 2x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 76
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY91F522FSEPMC-GSE1 CY91F522FSEPMC-GSE1 Infineon Technologies Description: IC MCU 32BIT 320KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 37x12b SAR; D/A 2x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 76
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ISZ75DP15LMATMA1 ISZ75DP15LMATMA1 Infineon Technologies Infineon-ISZ75DP15LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185aa002bcd3702 Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.13A (Ta), 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 543µA
Supplier Device Package: PG-TSDSON-8-26
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 75 V
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ISZ75DP15LMATMA1 ISZ75DP15LMATMA1 Infineon Technologies Infineon-ISZ75DP15LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185aa002bcd3702 Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.13A (Ta), 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 543µA
Supplier Device Package: PG-TSDSON-8-26
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 75 V
auf Bestellung 5153 Stücke:
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9+2.56 EUR
14+1.61 EUR
50+1.19 EUR
100+1.06 EUR
500+0.82 EUR
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ISC16DP15LMATMA1 ISC16DP15LMATMA1 Infineon Technologies Infineon-ISC16DP15LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185a9e49c5036e5 Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2V @ 2.304mA
Supplier Device Package: PG-TDSON-8-45
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 75 V
Produkt ist nicht verfügbar
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ISC16DP15LMATMA1 ISC16DP15LMATMA1 Infineon Technologies Infineon-ISC16DP15LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185a9e49c5036e5 Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2V @ 2.304mA
Supplier Device Package: PG-TDSON-8-45
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 75 V
auf Bestellung 634 Stücke:
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4+6.94 EUR
10+4.52 EUR
50+3.49 EUR
100+3.15 EUR
500+2.57 EUR
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SPA11N80C3 E8209 SPA11N80C3 E8209 Infineon Technologies Infineon-SPA11N80C3-DS-v02_93-EN.pdf?fileId=db3a3043163797a60116385b2fcc00ec Description: 800V COOLMOS N-CHANNEL POWER MOS
Packaging: Bulk
Produkt ist nicht verfügbar
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D2450N02TXPSA1 D2450N02TXPSA1 Infineon Technologies Infineon-D2450N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd8012863a4b431538d Description: DIODE GEN PURP 200V 2450A
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2450A
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 2000 A
Current - Reverse Leakage @ Vr: 50 mA @ 200 V
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CY7C1320CV18-250BZXC CY7C1320CV18-250BZXC Infineon Technologies CY7C1318CV18%2C%20CY7C1320CV18.pdf Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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CY14B101Q2A-SXIT CY14B101Q2A-SXIT Infineon Technologies Infineon-CY14C101Q_CY14B101Q_CY14E101Q_1_MBIT_(128K_X_8)_SERIAL_(SPI)_NVSRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebfce093450&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration- Description: IC NVSRAM 1MBIT SPI 40MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 40 MHz
Memory Format: NVSRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1512V18-250BZXC CY7C1512V18-250BZXC Infineon Technologies CY7C1510%2C12%2C14%2C25V18.pdf Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
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CY8C29466-24SXIT CY8C29466-24SXIT Infineon Technologies Infineon-CY8C29466_CY8C29566_CY8C29666_CY8C29866_PSoC_Programmable_System-on-Chip-DataSheet-v31_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec690c03ce1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integra Description: IC MCU 8BIT 32KB FLASH 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 12x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-SOIC
Number of I/O: 24
DigiKey Programmable: Verified
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1000+19.03 EUR
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CY3230-28PDIP-AK Infineon Technologies Description: KIT FOOT FOR 28-DIP
Packaging: Bulk
For Use With/Related Products: CY8C29466
Accessory Type: Emulator Foot Kit
Produkt ist nicht verfügbar
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NAC1081XTMA1 NAC1081XTMA1 Infineon Technologies Infineon-Infineon-NAC1080_NAC1081_DS_v01_03-EN-DataSheet-v01_03-EN.pdf?fileId=8ac78c8c7d718a49017db42a43930b11 Description: CONTACTLESS POWER&SENSOR
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: SPI, UART
Type: RFID Reader/Transponder
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 2.8V ~ 3.3V
Standards: ISO 14443, NFC
Supplier Device Package: PG-VQFN-32-20
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IRL530NSPBF IRL530NSPBF Infineon Technologies irl530nspbf.pdf?fileId=5546d462533600a40153565fb64c2562 description Description: MOSFET N-CH 100V 17A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
Power Dissipation (Max): 3.8W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Produkt ist nicht verfügbar
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IHW30N110R5XKSA1 IHW30N110R5XKSA1 Infineon Technologies Infineon-IHW30N110R5-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80f4d329018129177f1b20ad Description: IGBT TRENCH 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 30A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: -/350ns
Gate Charge: 240 nC
Current - Collector (Ic) (Max): 60 A
Current - Collector Pulsed (Icm): 90 A
Power - Max: 330 W
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3+9.51 EUR
30+5.25 EUR
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T2180N18TOFVTXPSA1 T2180N18TOFVTXPSA1 Infineon Technologies Infineon-T2180N-DS-v02_00-en_de.pdf?fileId=db3a304323b87bc201240b719a2f47ca Description: SCR MODULE 1.8KV 4460A DO-200AD
Packaging: Tray
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 2180 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 4460 A
Voltage - Off State: 1.8 kV
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CY8C4147AZS-S445T CY8C4147AZS-S445T Infineon Technologies Infineon-Automotive_PSoC_4100S_Plus-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8823155701884daaa2621e33 Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE7184F3VXUMA2 TLE7184F3VXUMA2 Infineon Technologies Infineon-TLE7184F3V-DS-v01_02-EN.pdf?fileId=db3a3043353cc43601353d3eb3c0006f Description: IC MOTOR DRIVER 6V-45V 48VQFN
Motor Type - AC, DC: Brushless DC (BLDC), Brushed DC
Technology: Power MOSFET
Voltage - Supply: 6V ~ 45V
Output Configuration: Pre-Driver - Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Parallel
Function: Controller - Commutation, Direction Management
Packaging: Tape & Reel (TR)
Grade: Automotive
Produkt ist nicht verfügbar
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IPF009N04NF2SATMA1 IPF009N04NF2SATMA1 Infineon Technologies Infineon-IPF009N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851d12d0af6afd Description: TRENCH <= 40V
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TO263-7-U02
Vgs(th) (Max) @ Id: 3.4V @ 249µA
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 302A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
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IPF009N04NF2SATMA1 IPF009N04NF2SATMA1 Infineon Technologies Infineon-IPF009N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851d12d0af6afd Description: TRENCH <= 40V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TO263-7-U02
Vgs(th) (Max) @ Id: 3.4V @ 249µA
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 302A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
auf Bestellung 350 Stücke:
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3+7.27 EUR
10+5.12 EUR
100+3.68 EUR
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AUIRF7736M2TR AUIRF7736M2TR Infineon Technologies auirf7736m2.pdf?fileId=5546d462533600a4015355adac5913fb Description: MOSFET N-CH 40V 22A DIRECTFET
Qualification: AEC-Q101
Grade: Automotive
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DirectFET™ Isometric M4
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 65A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 108A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric M4
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4267 pF @ 25 V
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4800+3.7 EUR
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AUIRF7736M2TR AUIRF7736M2TR Infineon Technologies auirf7736m2.pdf?fileId=5546d462533600a4015355adac5913fb Description: MOSFET N-CH 40V 22A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 4267 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: DirectFET™ Isometric M4
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 65A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 108A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric M4
Packaging: Cut Tape (CT)
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3+8.44 EUR
10+5.59 EUR
100+3.96 EUR
500+3.7 EUR
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AUIRF7739L2TR AUIRF7739L2TR Infineon Technologies auirf7739l2.pdf?fileId=5546d462533600a4015355b0a6551407 Description: MOSFET N-CH 40V 46A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 11880 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DirectFET™ Isometric L8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 160A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 270A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric L8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TT215N22KOFHPSA1 TT215N22KOFHPSA1 Infineon Technologies Infineon-TT215N-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b42fe0c84e1c Description: SCR MODULE 2.2KV MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 215 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 2.2 kV
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TDA16810GXUMA2 TDA16810GXUMA2 Infineon Technologies Description: IC POWERSTAGE
DigiKey Programmable: Not Verified
Supplier Device Package: PG-DSO-14
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLS850B0TE50BOARDTOBO1 TLS850B0TE50BOARDTOBO1 Infineon Technologies Description: EVAL BOARD FOR TLS850B0TEV50
Contents: Board(s)
Channels per IC: 1 - Single
Supplied Contents: Board(s)
Utilized IC / Part: TLS850B0TEV50
Board Type: Fully Populated
Regulator Type: Positive Fixed
Current - Output: 500mA
Voltage - Input: 3V ~ 40V
Voltage - Output: 5V
Packaging: Box
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TLS850B0TB33BOARDTOBO1 TLS850B0TB33BOARDTOBO1 Infineon Technologies Description: EVAL BOARD FOR TLS850B0TBV33
Contents: Board(s)
Channels per IC: 1 - Single
Supplied Contents: Board(s)
Utilized IC / Part: TLS850B0TBV33
Board Type: Fully Populated
Regulator Type: Positive Fixed
Current - Output: 500mA
Voltage - Input: 3V ~ 40V
Voltage - Output: 3.3V
Packaging: Box
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TLS850B0TE33BOARDTOBO1 TLS850B0TE33BOARDTOBO1 Infineon Technologies Description: EVAL BOARD FOR TLS850B0TEV33
Contents: Board(s)
Utilized IC / Part: TLS850B0TEV33
Board Type: Fully Populated
Regulator Type: Positive Fixed
Current - Output: 500mA
Voltage - Input: 3V ~ 40V
Voltage - Output: 3.3V
Packaging: Box
Channels per IC: 1 - Single
Supplied Contents: Board(s)
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TLS4125ADJBOARDTOBO1 TLS4125ADJBOARDTOBO1 Infineon Technologies Description: TLS4125 ADJ BOARD
Outputs and Type: 1, Non-Isolated
Main Purpose: DC/DC, Step Down
Supplied Contents: Board(s)
Utilized IC / Part: TLS4125
Board Type: Fully Populated
Regulator Topology: Buck
Current - Output: 2.5A
Voltage - Input: 4V ~ 35V
Voltage - Output: 3V ~ 10V
Packaging: Bulk
Produkt ist nicht verfügbar
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CYW89373CUBGT CYW89373CUBGT Infineon Technologies Description: WIRELESS AUTOMOTIVE
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CY8C4145AZI-S423T CY8C4145AZI-S423T Infineon Technologies Infineon-PSOC_4_PSOC_4100S_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 32KB FLASH 48TQFP
Connectivity: I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 4K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Number of I/O: 36
Supplier Device Package: 48-TQFP (7x7)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Produkt ist nicht verfügbar
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IRG7PH50UPBF IRG7PH50UPBF Infineon Technologies irg7ph50upbf.pdf?fileId=5546d462533600a40153564db8e123c3 Description: IGBT 1200V 140A 556W TO247AC
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 140 A
Gate Charge: 290 nC
Test Condition: 600V, 50A, 5Ohm, 15V
Switching Energy: 3.6mJ (on), 2.2mJ (off)
Td (on/off) @ 25°C: 35ns/430ns
IGBT Type: Trench
Supplier Device Package: TO-247AC
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Power - Max: 556 W
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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IMZ120R030M1HXKSA1 IMZ120R030M1HXKSA1 Infineon Technologies infineon-imz120r030m1h-datasheet-en.pdf Description: SICFET N-CH 1.2KV 56A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 25A, 18V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 10mA
Supplier Device Package: PG-TO247-4-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 800 V
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IMBG65R022M1HXTMA1 IMBG65R022M1HXTMA1 Infineon Technologies Infineon-IMBG65R022M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49799d240d74 Description: SILICON CARBIDE MOSFET PG-TO263-
Input Capacitance (Ciss) (Max) @ Vds: 2288 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 12.3mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 41.1A, 18V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
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IMBG65R022M1HXTMA1 IMBG65R022M1HXTMA1 Infineon Technologies Infineon-IMBG65R022M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49799d240d74 Description: SILICON CARBIDE MOSFET PG-TO263-
Input Capacitance (Ciss) (Max) @ Vds: 2288 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 12.3mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 41.1A, 18V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
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IMBG65R039M1HXTMA1 Infineon Technologies Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 25A, 18V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 7.5mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1393 pF @ 400 V
Produkt ist nicht verfügbar
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IMBG65R039M1HXTMA1 Infineon Technologies Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 25A, 18V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 7.5mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1393 pF @ 400 V
Produkt ist nicht verfügbar
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AIMBG120R080M1XTMA1 AIMBG120R080M1XTMA1 Infineon Technologies 448_AIMBG120R.pdf Description: SICFET N-CH 1200V 30.6A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.6A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 20V
Power Dissipation (Max): 168W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 3.3mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 671 pF @ 800 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AIMBG120R080M1XTMA1 AIMBG120R080M1XTMA1 Infineon Technologies 448_AIMBG120R.pdf Description: SICFET N-CH 1200V 30.6A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.6A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 20V
Power Dissipation (Max): 168W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 3.3mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 671 pF @ 800 V
Qualification: AEC-Q101
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AIMBG120R040M1XTMA1 AIMBG120R040M1XTMA1 Infineon Technologies 448_AIMBG120R.pdf Description: SICFET N-CH 1200V 54A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 20A, 20V
Power Dissipation (Max): 268W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 6.4mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1264 pF @ 800 V
Qualification: AEC-Q101
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AIMBG120R040M1XTMA1 AIMBG120R040M1XTMA1 Infineon Technologies 448_AIMBG120R.pdf Description: SICFET N-CH 1200V 54A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 20A, 20V
Power Dissipation (Max): 268W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 6.4mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1264 pF @ 800 V
Qualification: AEC-Q101
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10+17.22 EUR
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100+13.96 EUR
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CY8C6247BZI-D44T Infineon-PSoC_6_MCU_CY8C62x6_CY8C62x7-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee4c9386bff
CY8C6247BZI-D44T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 124VFBGA
DigiKey Programmable: Not Verified
Number of I/O: 100
Supplier Device Package: 124-VFBGA (9x9)
Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, POR, PWM, Temp Sensor, WDT
Connectivity: FIFO, I2C, LINbus, QSPI, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V
Core Size: 32-Bit Dual-Core
Data Converters: A/D 16x12b SAR, 10b Sigma-Delta; D/A 2x7/8b
Core Processor: ARM® Cortex®-M0, ARM® Cortex®-M4
EEPROM Size: 32K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 288K x 8
Program Memory Size: 1MB (1M x 8)
Speed: 100MHz, 150MHz
Mounting Type: Surface Mount
Package / Case: 124-VFBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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S25HS512TFAMHI010 002-12345_rev-AF.pdf
S25HS512TFAMHI010
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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2+18.72 EUR
10+17.41 EUR
25+16.87 EUR
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S26KS256SDPBHI020 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
S26KS256SDPBHI020
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT PAR 24FBGA
DigiKey Programmable: Not Verified
Memory Organization: 32M x 8
Access Time: 96 ns
Memory Interface: Parallel
Supplier Device Package: 24-FBGA (6x8)
Memory Format: FLASH
Clock Frequency: 166 MHz
Technology: FLASH - NOR
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Packaging: Tray
Produkt ist nicht verfügbar
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IDH04G65C6XKSA1 Infineon-IDH04G65C6-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015ccf519a3174d7
IDH04G65C6XKSA1
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 12A PGTO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 205pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 4 A
Current - Reverse Leakage @ Vr: 14 µA @ 420 V
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UIOSTICKTOBO1 Infineon-2014-04-01_uIO-Stick_PEK-Light_Pinout-ATI-v01_00-EN.pdf?fileId=5546d46265487f7b016557506a9b300e
UIOSTICKTOBO1
Hersteller: Infineon Technologies
Description: UIO-STICK CONTROL BOARDS/KITS
Packaging: Box
Accessory Type: Interface Board
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TLS850F3TUV50ATMA1 Infineon-TLS850F3TUV50-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8929aa4d0189daf49d383c09
TLS850F3TUV50ATMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR OPTIREG
Packaging: Cut Tape (CT)
Package / Case: TO-252-7, DPak (6 Leads + Tab)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 47 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TO252-7-1
Voltage - Output (Min/Fixed): 5V
Control Features: Delay, Inhibit, Reset Output, Watchdog
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.75V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 55 µA
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7+3.08 EUR
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250+1.71 EUR
500+1.65 EUR
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TC297TA128F300NBCKXUMA1 Infineon-TC29xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f
TC297TA128F300NBCKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 8MB FLASH 292LFBGA
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 60x12b, 10 x Sigma-Delta
Core Processor: TriCore™
EEPROM Size: 384K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 2.75M x 8
Program Memory Size: 8MB (8M x 8)
Speed: 300MHz
Mounting Type: Surface Mount
Package / Case: 292-LFBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Number of I/O: 169
Supplier Device Package: PG-LFBGA-292-6
Peripherals: DMA, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
auf Bestellung 1000 Stücke:
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1000+78.6 EUR
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TC297TA128F300NBCKXUMA1 Infineon-TC29xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f
TC297TA128F300NBCKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 8MB FLASH 292LFBGA
DigiKey Programmable: Not Verified
Number of I/O: 169
Supplier Device Package: PG-LFBGA-292-6
Peripherals: DMA, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 60x12b, 10 x Sigma-Delta
Core Processor: TriCore™
EEPROM Size: 384K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 2.75M x 8
Program Memory Size: 8MB (8M x 8)
Speed: 300MHz
Mounting Type: Surface Mount
Package / Case: 292-LFBGA
Packaging: Cut Tape (CT)
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1+114.23 EUR
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TC337DA32F300SAAKXUMA1 Infineon-TriCore_Family_BR-ProductBrochure-v01_00-EN.pdf?fileId=5546d4625d5945ed015dc81f47b436c7
TC337DA32F300SAAKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1.53K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, LINbus, QSPI, SENT
Peripherals: DMA, PWM, WDT
Supplier Device Package: PG-LFBGA-292-6
DigiKey Programmable: Not Verified
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1000+216.2 EUR
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TC337DA32F300SAAKXUMA1 Infineon-TriCore_Family_BR-ProductBrochure-v01_00-EN.pdf?fileId=5546d4625d5945ed015dc81f47b436c7
TC337DA32F300SAAKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1.53K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, LINbus, QSPI, SENT
Peripherals: DMA, PWM, WDT
Supplier Device Package: PG-LFBGA-292-6
DigiKey Programmable: Not Verified
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+258.53 EUR
10+246.31 EUR
25+241.07 EUR
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TC399XP256F300SBDKXUMA1 4_cip10520.pdf
TC399XP256F300SBDKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16MB FLASH 516LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 516-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 2.75K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1M x 8
Core Processor: TriCore™
Data Converters: A/D 100 SAR, Sigma-Delta
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-516-10
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC397XA256F300SBDKXUMA1 Infineon-AURIX_TC3xx_Part2-UserManual-v01_00-EN.pdf?fileId=5546d462712ef9b701717d35f8541d94
TC397XA256F300SBDKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 6.75M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1M x 8
Core Processor: TriCore™
Data Converters: A/D 76 SAR, Sigma-Delta
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-10
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC399XX256F300SBDKXUMA1 4_cip10520.pdf
TC399XX256F300SBDKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16MB FLASH 516LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 516-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 6.75M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1M x 8
Core Processor: TriCore™
Data Converters: A/D 100 SAR, Sigma-Delta
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-516-10
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC367DP64F300SAALXUMA1 4_cip10527.pdf
TC367DP64F300SAALXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 672K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-292-11
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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TC367DP64F300SAALXUMA1 4_cip10527.pdf
TC367DP64F300SAALXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 672K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-292-11
DigiKey Programmable: Not Verified
auf Bestellung 608 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+57.66 EUR
10+46.71 EUR
25+43.98 EUR
100+40.97 EUR
250+39.53 EUR
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S29GL256S10TFIV20 infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium
S29GL256S10TFIV20
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
auf Bestellung 1106 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+20.29 EUR
10+18.86 EUR
25+18.28 EUR
91+17.47 EUR
182+17.04 EUR
273+16.79 EUR
546+16.36 EUR
1001+16.01 EUR
Mindestbestellmenge: 2 Stücke
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TC277T64F200NDCKXUMA2 Infineon-TC27xDC-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b4016953972c57046a
TC277T64F200NDCKXUMA2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Number of I/O: 169
DigiKey Programmable: Not Verified
auf Bestellung 997 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+65.95 EUR
10+53.47 EUR
25+50.35 EUR
100+46.92 EUR
250+45.28 EUR
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TC277T64F200SDCKXUMA2 Infineon-TC27xDC-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b4016953972c57046a
TC277T64F200SDCKXUMA2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Number of I/O: 169
DigiKey Programmable: Not Verified
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+61.32 EUR
10+49.61 EUR
25+46.68 EUR
100+43.47 EUR
250+41.94 EUR
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CY91F522FSCPMC-GSE1 Infineon-CY91520_Series_32-bit_FR81S_Microcontroller-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda0e215ba3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil
CY91F522FSCPMC-GSE1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 320KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 37x12b; D/A 2x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 76
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 900 Stücke
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CY91F522FSEPMC-GSE1
CY91F522FSEPMC-GSE1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 320KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 56K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 37x12b SAR; D/A 2x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 76
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ISZ75DP15LMATMA1 Infineon-ISZ75DP15LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185aa002bcd3702
ISZ75DP15LMATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.13A (Ta), 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 543µA
Supplier Device Package: PG-TSDSON-8-26
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 75 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.62 EUR
Mindestbestellmenge: 5000 Stücke
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ISZ75DP15LMATMA1 Infineon-ISZ75DP15LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185aa002bcd3702
ISZ75DP15LMATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.13A (Ta), 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 543µA
Supplier Device Package: PG-TSDSON-8-26
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 75 V
auf Bestellung 5153 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.56 EUR
14+1.61 EUR
50+1.19 EUR
100+1.06 EUR
500+0.82 EUR
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ISC16DP15LMATMA1 Infineon-ISC16DP15LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185a9e49c5036e5
ISC16DP15LMATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2V @ 2.304mA
Supplier Device Package: PG-TDSON-8-45
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 75 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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ISC16DP15LMATMA1 Infineon-ISC16DP15LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185a9e49c5036e5
ISC16DP15LMATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2V @ 2.304mA
Supplier Device Package: PG-TDSON-8-45
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 75 V
auf Bestellung 634 Stücke:
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AnzahlPrivatkunde
4+6.94 EUR
10+4.52 EUR
50+3.49 EUR
100+3.15 EUR
500+2.57 EUR
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SPA11N80C3 E8209 Infineon-SPA11N80C3-DS-v02_93-EN.pdf?fileId=db3a3043163797a60116385b2fcc00ec
SPA11N80C3 E8209
Hersteller: Infineon Technologies
Description: 800V COOLMOS N-CHANNEL POWER MOS
Packaging: Bulk
Produkt ist nicht verfügbar
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D2450N02TXPSA1 Infineon-D2450N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd8012863a4b431538d
D2450N02TXPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 200V 2450A
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2450A
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 2000 A
Current - Reverse Leakage @ Vr: 50 mA @ 200 V
Produkt ist nicht verfügbar
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CY7C1320CV18-250BZXC CY7C1318CV18%2C%20CY7C1320CV18.pdf
CY7C1320CV18-250BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
auf Bestellung 326 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+67.37 EUR
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CY14B101Q2A-SXIT Infineon-CY14C101Q_CY14B101Q_CY14E101Q_1_MBIT_(128K_X_8)_SERIAL_(SPI)_NVSRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebfce093450&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-
CY14B101Q2A-SXIT
Hersteller: Infineon Technologies
Description: IC NVSRAM 1MBIT SPI 40MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 40 MHz
Memory Format: NVSRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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CY7C1512V18-250BZXC CY7C1510%2C12%2C14%2C25V18.pdf
CY7C1512V18-250BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C29466-24SXIT Infineon-CY8C29466_CY8C29566_CY8C29666_CY8C29866_PSoC_Programmable_System-on-Chip-DataSheet-v31_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec690c03ce1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integra
CY8C29466-24SXIT
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 12x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-SOIC
Number of I/O: 24
DigiKey Programmable: Verified
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+19.03 EUR
Mindestbestellmenge: 1000 Stücke
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CY3230-28PDIP-AK
Hersteller: Infineon Technologies
Description: KIT FOOT FOR 28-DIP
Packaging: Bulk
For Use With/Related Products: CY8C29466
Accessory Type: Emulator Foot Kit
Produkt ist nicht verfügbar
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NAC1081XTMA1 Infineon-Infineon-NAC1080_NAC1081_DS_v01_03-EN-DataSheet-v01_03-EN.pdf?fileId=8ac78c8c7d718a49017db42a43930b11
NAC1081XTMA1
Hersteller: Infineon Technologies
Description: CONTACTLESS POWER&SENSOR
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: SPI, UART
Type: RFID Reader/Transponder
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 2.8V ~ 3.3V
Standards: ISO 14443, NFC
Supplier Device Package: PG-VQFN-32-20
Produkt ist nicht verfügbar
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IRL530NSPBF description irl530nspbf.pdf?fileId=5546d462533600a40153565fb64c2562
IRL530NSPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 17A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
Power Dissipation (Max): 3.8W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Produkt ist nicht verfügbar
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IHW30N110R5XKSA1 Infineon-IHW30N110R5-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80f4d329018129177f1b20ad
IHW30N110R5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 30A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: -/350ns
Gate Charge: 240 nC
Current - Collector (Ic) (Max): 60 A
Current - Collector Pulsed (Icm): 90 A
Power - Max: 330 W
auf Bestellung 118 Stücke:
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AnzahlPrivatkunde
3+9.51 EUR
30+5.25 EUR
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T2180N18TOFVTXPSA1 Infineon-T2180N-DS-v02_00-en_de.pdf?fileId=db3a304323b87bc201240b719a2f47ca
T2180N18TOFVTXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.8KV 4460A DO-200AD
Packaging: Tray
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 2180 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 4460 A
Voltage - Off State: 1.8 kV
auf Bestellung 2 Stücke:
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1+1016.96 EUR
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CY8C4147AZS-S445T Infineon-Automotive_PSoC_4100S_Plus-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8823155701884daaa2621e33
CY8C4147AZS-S445T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE7184F3VXUMA2 Infineon-TLE7184F3V-DS-v01_02-EN.pdf?fileId=db3a3043353cc43601353d3eb3c0006f
TLE7184F3VXUMA2
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 6V-45V 48VQFN
Motor Type - AC, DC: Brushless DC (BLDC), Brushed DC
Technology: Power MOSFET
Voltage - Supply: 6V ~ 45V
Output Configuration: Pre-Driver - Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Parallel
Function: Controller - Commutation, Direction Management
Packaging: Tape & Reel (TR)
Grade: Automotive
Produkt ist nicht verfügbar
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IPF009N04NF2SATMA1 Infineon-IPF009N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851d12d0af6afd
IPF009N04NF2SATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TO263-7-U02
Vgs(th) (Max) @ Id: 3.4V @ 249µA
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 302A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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IPF009N04NF2SATMA1 Infineon-IPF009N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851d12d0af6afd
IPF009N04NF2SATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TO263-7-U02
Vgs(th) (Max) @ Id: 3.4V @ 249µA
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 302A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
auf Bestellung 350 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.27 EUR
10+5.12 EUR
100+3.68 EUR
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AUIRF7736M2TR auirf7736m2.pdf?fileId=5546d462533600a4015355adac5913fb
AUIRF7736M2TR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 22A DIRECTFET
Qualification: AEC-Q101
Grade: Automotive
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DirectFET™ Isometric M4
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 65A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 108A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric M4
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4267 pF @ 25 V
auf Bestellung 4800 Stücke:
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4800+3.7 EUR
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AUIRF7736M2TR auirf7736m2.pdf?fileId=5546d462533600a4015355adac5913fb
AUIRF7736M2TR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 22A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 4267 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: DirectFET™ Isometric M4
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 65A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 108A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric M4
Packaging: Cut Tape (CT)
auf Bestellung 4993 Stücke:
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AnzahlPrivatkunde
3+8.44 EUR
10+5.59 EUR
100+3.96 EUR
500+3.7 EUR
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AUIRF7739L2TR auirf7739l2.pdf?fileId=5546d462533600a4015355b0a6551407
AUIRF7739L2TR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 46A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 11880 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DirectFET™ Isometric L8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 160A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 270A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric L8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TT215N22KOFHPSA1 Infineon-TT215N-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b42fe0c84e1c
TT215N22KOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 2.2KV MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 215 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 2.2 kV
auf Bestellung 21 Stücke:
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AnzahlPrivatkunde
1+352.22 EUR
12+309.41 EUR
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TDA16810GXUMA2
TDA16810GXUMA2
Hersteller: Infineon Technologies
Description: IC POWERSTAGE
DigiKey Programmable: Not Verified
Supplier Device Package: PG-DSO-14
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLS850B0TE50BOARDTOBO1
TLS850B0TE50BOARDTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLS850B0TEV50
Contents: Board(s)
Channels per IC: 1 - Single
Supplied Contents: Board(s)
Utilized IC / Part: TLS850B0TEV50
Board Type: Fully Populated
Regulator Type: Positive Fixed
Current - Output: 500mA
Voltage - Input: 3V ~ 40V
Voltage - Output: 5V
Packaging: Box
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AnzahlPrivatkunde
1+52.59 EUR
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TLS850B0TB33BOARDTOBO1
TLS850B0TB33BOARDTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLS850B0TBV33
Contents: Board(s)
Channels per IC: 1 - Single
Supplied Contents: Board(s)
Utilized IC / Part: TLS850B0TBV33
Board Type: Fully Populated
Regulator Type: Positive Fixed
Current - Output: 500mA
Voltage - Input: 3V ~ 40V
Voltage - Output: 3.3V
Packaging: Box
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TLS850B0TE33BOARDTOBO1
TLS850B0TE33BOARDTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLS850B0TEV33
Contents: Board(s)
Utilized IC / Part: TLS850B0TEV33
Board Type: Fully Populated
Regulator Type: Positive Fixed
Current - Output: 500mA
Voltage - Input: 3V ~ 40V
Voltage - Output: 3.3V
Packaging: Box
Channels per IC: 1 - Single
Supplied Contents: Board(s)
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TLS4125ADJBOARDTOBO1
TLS4125ADJBOARDTOBO1
Hersteller: Infineon Technologies
Description: TLS4125 ADJ BOARD
Outputs and Type: 1, Non-Isolated
Main Purpose: DC/DC, Step Down
Supplied Contents: Board(s)
Utilized IC / Part: TLS4125
Board Type: Fully Populated
Regulator Topology: Buck
Current - Output: 2.5A
Voltage - Input: 4V ~ 35V
Voltage - Output: 3V ~ 10V
Packaging: Bulk
Produkt ist nicht verfügbar
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CYW89373CUBGT
CYW89373CUBGT
Hersteller: Infineon Technologies
Description: WIRELESS AUTOMOTIVE
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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CY8C4145AZI-S423T Infineon-PSOC_4_PSOC_4100S_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4145AZI-S423T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 48TQFP
Connectivity: I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 4K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Number of I/O: 36
Supplier Device Package: 48-TQFP (7x7)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Produkt ist nicht verfügbar
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IRG7PH50UPBF irg7ph50upbf.pdf?fileId=5546d462533600a40153564db8e123c3
IRG7PH50UPBF
Hersteller: Infineon Technologies
Description: IGBT 1200V 140A 556W TO247AC
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 140 A
Gate Charge: 290 nC
Test Condition: 600V, 50A, 5Ohm, 15V
Switching Energy: 3.6mJ (on), 2.2mJ (off)
Td (on/off) @ 25°C: 35ns/430ns
IGBT Type: Trench
Supplier Device Package: TO-247AC
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Power - Max: 556 W
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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IMZ120R030M1HXKSA1 infineon-imz120r030m1h-datasheet-en.pdf
IMZ120R030M1HXKSA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 1.2KV 56A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 25A, 18V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 10mA
Supplier Device Package: PG-TO247-4-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 800 V
auf Bestellung 385 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+31.08 EUR
30+19.14 EUR
120+16.52 EUR
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IMBG65R022M1HXTMA1 Infineon-IMBG65R022M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49799d240d74
IMBG65R022M1HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Input Capacitance (Ciss) (Max) @ Vds: 2288 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 12.3mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 41.1A, 18V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+16.87 EUR
Mindestbestellmenge: 1000 Stücke
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IMBG65R022M1HXTMA1 Infineon-IMBG65R022M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7ddc01d7017e49799d240d74
IMBG65R022M1HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Input Capacitance (Ciss) (Max) @ Vds: 2288 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 12.3mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 41.1A, 18V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
auf Bestellung 1550 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+33.45 EUR
10+23.73 EUR
100+20.65 EUR
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IMBG65R039M1HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 25A, 18V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 7.5mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1393 pF @ 400 V
Produkt ist nicht verfügbar
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IMBG65R039M1HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 25A, 18V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 7.5mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1393 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AIMBG120R080M1XTMA1 448_AIMBG120R.pdf
AIMBG120R080M1XTMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 1200V 30.6A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.6A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 20V
Power Dissipation (Max): 168W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 3.3mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 671 pF @ 800 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AIMBG120R080M1XTMA1 448_AIMBG120R.pdf
AIMBG120R080M1XTMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 1200V 30.6A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.6A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 20V
Power Dissipation (Max): 168W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 3.3mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 671 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 330 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+17.09 EUR
10+11.67 EUR
100+8.6 EUR
Mindestbestellmenge: 2 Stücke
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AIMBG120R040M1XTMA1 448_AIMBG120R.pdf
AIMBG120R040M1XTMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 1200V 54A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 20A, 20V
Power Dissipation (Max): 268W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 6.4mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1264 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+11.41 EUR
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AIMBG120R040M1XTMA1 448_AIMBG120R.pdf
AIMBG120R040M1XTMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 1200V 54A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 20A, 20V
Power Dissipation (Max): 268W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 6.4mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1264 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+24.72 EUR
10+17.22 EUR
50+14.03 EUR
100+13.96 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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