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SIPC10N80C3X1SA1 Infineon Technologies Description: TRANSISTOR N-CH
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SIPC14N50C3X1SA2 Infineon Technologies Description: TRANSISTOR N-CH
Packaging: Bulk
Part Status: Active
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SIPC14N60C3X1SA1 Infineon Technologies Description: TRANSISTOR N-CH
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Part Status: Active
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SIPC14N80C3X1SA2 Infineon Technologies Description: TRANSISTOR N-CH
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SIPC18N60CFDX1SA1 Infineon Technologies Description: TRANSISTOR N-CH
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Part Status: Active
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SIPC19N80C3X1SA1 Infineon Technologies Description: TRANSISTOR N-CH
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SIPC26N50C3X1SA2 Infineon Technologies Description: TRANSISTOR N-CH
Packaging: Bulk
Part Status: Active
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SIPC30N60C3X1SA2 Infineon Technologies Description: TRANSISTOR N-CH
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SIPC44N50C3X1SA2 Infineon Technologies Description: TRANSISTOR N-CH
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SIPC46N60C3X1SA1 Infineon Technologies Description: TRANSISTOR N-CH
Packaging: Bulk
Part Status: Active
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SIPC46N60CFDX1SA1 Infineon Technologies Description: TRANSISTOR N-CH
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SIPC69N60C3X1SA1 Infineon Technologies Description: TRANSISTOR N-CH
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SIPC69N65C3X1SA1 Infineon Technologies Description: TRANSISTOR N-CH
Packaging: Bulk
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SISC185N06LX1SA1 Infineon Technologies Description: TRANSISTOR P-CH BARE DIE
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SLE66R01PNNBX1SA2 Infineon Technologies Infineon-SLE+66R01PN-DS-v11_11-EN.pdf?fileId=5546d46250cc1fdf015124849d2c338e Description: IC SECURITY CHIP CARD CTLR
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SLE66R35RNBX1SA1 Infineon Technologies Description: IC SECURITY CHIP CARD CTLR
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SRF55V02PHCNBX1SA1 Infineon Technologies Description: IC RFID TRANSP 13.56MHZ
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SRF55V10PHCNBX1SA1 Infineon Technologies Description: IC RFID TRANSP 13.56MHZ
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TLE4984CXAAF47XAMA1 Infineon Technologies Description: IC SPEED SENSOR MAGN PG-SSO-3
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TLE5027CE6747HAMA1 Infineon Technologies TLE5027C_PB_7-2-13.pdf Description: SENSOR MAGNETORESISTIVE PWM 3SIP
Packaging: Tape & Box (TB)
Package / Case: 3-SSIP Module
Output Type: PWM
Mounting Type: Through Hole
Axis: X, Y, Z
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Magnetoresistive
Supplier Device Package: PG-SSO-3-92
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
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SLE66R35E7MCC2ZZZA1 Infineon Technologies Description: IC SECURITY CHIP CARD CTLR SMD
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SLE66R35IMCC8XHSA1 Infineon Technologies Description: IC SECURITY CHIP CARD CTLR SMD
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SLE66R35MCC8IXHSA1 Infineon Technologies Description: IC SECURITY CHIP CARD CTLR SMD
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SLE66R35RMCC2XHSA1 Infineon Technologies Description: IC SECURITY CHIP CARD CTLR SMD
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SLE66R35RMCC8IXHSA1 Infineon Technologies Description: IC SECURITY CHIP CARD CTLR SMD
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SLE66R35RMCC8XHSA1 Infineon Technologies Description: IC SECURITY CHIP CARD CTLR SMD
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SRF55V02PHCMCC2ZZZA1 Infineon Technologies Description: IC RFID TRANSP 13.56MHZ MCC2-2
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SRF55V02PMCC8XHSA1 Infineon Technologies Description: IC RFID TRANSP 13.56MHZ MCC2-2
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SRF55V02SMCC8ZZZA1 Infineon Technologies Description: IC RFID TRANSP 13.56MHZ MCC2-2
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SRF55V10PMCC8XHSA1 Infineon Technologies Description: IC RFID TRANSP 13.56MHZ MCC2-2
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SRF55V10SMCC8ZZZA1 Infineon Technologies Description: IC RFID TRANSP 13.56MHZ MCC2-2
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1EDI2010ASXUMA1 1EDI2010ASXUMA1 Infineon Technologies 1EDI2010AS-ISO-DS-v02_10.pdf Description: DGT ISO 3.75KV 1CH GT DVR DSO36
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Voltage - Isolation: 3750Vrms
Supplier Device Package: PG-DSO-36-63
Rise / Fall Time (Typ): 120ns, 150ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 13V ~ 18V
Grade: Automotive
Qualification: AEC-Q100
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1000+9.66 EUR
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2EDN7424FXTMA1 2EDN7424FXTMA1 Infineon Technologies Infineon-2EDN7424F-DS-v02_00-EN.pdf?fileId=5546d4625c54d85b015c5e4ef0083f67 Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8-60
Rise / Fall Time (Typ): 6.4ns, 5.4ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.3V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
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2500+0.80 EUR
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2EDN7424RXUMA1 2EDN7424RXUMA1 Infineon Technologies Infineon-2EDN7424R-DS-v02_00-EN.pdf?fileId=5546d4625c54d85b015c5e5812b13f6b Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Rise / Fall Time (Typ): 6.4ns, 5.4ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.3V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
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AIHD03N60RFATMA1 AIHD03N60RFATMA1 Infineon Technologies Description: IC DISCRETE 600V TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 2.5A
Supplier Device Package: PG-TO252-3-313
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 10ns/128ns
Switching Energy: 50µJ (on), 40µJ (off)
Test Condition: 400V, 2.5A, 68Ohm, 15V
Gate Charge: 17.1 nC
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 7.5 A
Power - Max: 53.6 W
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AIHD04N60RATMA1 AIHD04N60RATMA1 Infineon Technologies Description: IC DISCRETE 600V TO252-3
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AIHD04N60RFATMA1 AIHD04N60RFATMA1 Infineon Technologies Description: IC DISCRETE 600V TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
Supplier Device Package: PG-TO252-3-313
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/116ns
Switching Energy: 60µJ (on), 50µJ (off)
Test Condition: 400V, 4A, 43Ohm, 15V
Gate Charge: 27 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 75 W
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AIHD06N60RATMA1 AIHD06N60RATMA1 Infineon Technologies Description: IC DISCRETE 600V TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
Supplier Device Package: PG-TO252-3-313
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/127ns
Switching Energy: 110µJ (on), 220µJ (off)
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
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AIHD06N60RFATMA1 AIHD06N60RFATMA1 Infineon Technologies Description: IC DISCRETE 600V TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
Supplier Device Package: PG-TO252-3-313
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 8ns/105ns
Switching Energy: 90µJ (on), 90µJ (off)
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
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AIHD10N60RATMA1 Infineon Technologies Infineon-AIHD10N60R-DS-v02_01-EN.pdf?fileId=5546d4625c167129015c5382e26d7caf Description: IC DISCRETE 600V TO252-3
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AIHD10N60RFATMA1 Infineon Technologies Infineon-AIHD10N60RF-DS-v02_01-EN.pdf?fileId=5546d4625c167129015c5382e7cf7cb1 Description: IC DISCRETE 600V TO252-3
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AIHD15N60RATMA1 AIHD15N60RATMA1 Infineon Technologies Description: IC DISCRETE 600V TO252-3
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AIHD15N60RFATMA1 AIHD15N60RFATMA1 Infineon Technologies Description: IGBT TRENCH FS 600V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: PG-TO252-3-313
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/160ns
Switching Energy: 270µJ (on), 250µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 240 W
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AIKB20N60CTATMA1 AIKB20N60CTATMA1 Infineon Technologies Infineon-AIKB20N60CT-DS-v02_01-EN.pdf?fileId=5546d4625c167129015c5382a94c7c95 Description: IGBT TRENCH FS 600V 40A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/199ns
Switching Energy: 310µJ (on), 460µJ (off)
Test Condition: 600V, 20A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 156 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
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1000+2.86 EUR
Mindestbestellmenge: 1000
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AUIRS1170STR AUIRS1170STR Infineon Technologies Infineon-AUIRS1170S-DS-v02_30-EN.pdf?fileId=5546d46259d9a4bf0159da788eef0681 Description: IC GATE DRIVER 200V 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Voltage - Input: 200V
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 11V ~ 18V
Applications: Secondary-Side Controller
Supplier Device Package: PG-DSO-8-900
Current - Supply: 45 mA
DigiKey Programmable: Not Verified
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BSC0993NDATMA1 BSC0993NDATMA1 Infineon Technologies Infineon-BSC0993ND-DS-v02_00-EN.pdf?fileId=5546d46258fc0bc101598dddfb2c616c Description: MOSFET 2N-CH 17A TISON8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 5mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
Part Status: Not For New Designs
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BSC13DN30NSFDATMA1 BSC13DN30NSFDATMA1 Infineon Technologies Infineon-BSC13DN30NSFD-DS-v02_01-EN.pdf?fileId=5546d46259b0420a0159d5c940fc0d9a Description: MOSFET N-CH 300V 16A TDSON-8-1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 16A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 150 V
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BSC350N20NSFDATMA1 BSC350N20NSFDATMA1 Infineon Technologies Infineon-BSC350N20NSFD-DS-v02_01-EN.pdf?fileId=5546d46259b0420a0159d6094ce00ea0 Description: MOSFET N-CH 200V 35A TDSON-8-1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 35A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 100 V
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BSC670N25NSFDATMA1 BSC670N25NSFDATMA1 Infineon Technologies Infineon-BSC670N25NSFD-DS-v02_01-EN.pdf?fileId=5546d46259b0420a0159d61b96e90ee7 Description: MOSFET N-CH 250V 24A TDSON-8-1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 24A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 125 V
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5000+2.29 EUR
Mindestbestellmenge: 5000
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BSZ0589NSATMA1 BSZ0589NSATMA1 Infineon Technologies Infineon-BSZ0589NS-DS-v02_00-EN.pdf?fileId=5546d46258fc0bc101598da704fa60e0 Description: MOSFET N-CH 30V 17A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 8A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V
auf Bestellung 5000 Stücke:
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5000+0.59 EUR
Mindestbestellmenge: 5000
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BTS3125EJXUMA1 BTS3125EJXUMA1 Infineon Technologies Infineon-BTS3125EJ-DS-v01_00-EN.pdf?fileId=5546d462576f34750157bea1db0c43fd Description: IC PWR SWITCH N-CHAN 1:1 TDSO-8
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 31V (Max)
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 10A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-8-31
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.68 EUR
Mindestbestellmenge: 3000
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BTT60302EKBXUMA1 BTT60302EKBXUMA1 Infineon Technologies BTT6030-2EKB.pdf Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 32mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-40-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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ESD233B1W0201E6327XTSA1 ESD233B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD233-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d4625cc9456a015ce93607634882 Description: TVS DIODE 5.5VWM 13VC WLL-2-1
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Amplification
Capacitance @ Frequency: 33pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: SG-WLL-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.5V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 70W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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ESD237B1W0201E6327XTSA1 ESD237B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD237-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d4625cc9456a015ce9486a10488e Description: TVS DIODE 8VWM 17VC WLL-2-1
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 85°C
Applications: General Purpose
Capacitance @ Frequency: 7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 8V (Max)
Supplier Device Package: WLL-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9V
Voltage - Clamping (Max) @ Ipp: 17V (Typ)
Power - Peak Pulse: 42W
Power Line Protection: No
Produkt ist nicht verfügbar
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IAUT165N08S5N029ATMA2 IAUT165N08S5N029ATMA2 Infineon Technologies Infineon-IAUT165N08S5N029-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fda2c4bd0569 Description: MOSFET N-CH 80V 165A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 165A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6370 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ICE5QR0680AGXUMA1 ICE5QR0680AGXUMA1 Infineon Technologies INFN-S-A0003555962-1.pdf?t.download=true&u=5oefqw Description: IC CTLR QUASI-RES 12SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Not For New Designs
Power (Watts): 77 W
Produkt ist nicht verfügbar
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ICE5QR4770AGXUMA1 ICE5QR4770AGXUMA1 Infineon Technologies INFN-S-A0003555962-1.pdf?t.download=true&u=5oefqw Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Not For New Designs
Power (Watts): 27 W
Produkt ist nicht verfügbar
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IDP2321XUMA1 Infineon Technologies Description: IC AC/DC DGTL PLATFORM 16SOIC
Produkt ist nicht verfügbar
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IPB017N10N5LFATMA1 IPB017N10N5LFATMA1 Infineon Technologies Infineon-IPB017N10N5LF-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5b379cf73c7f Description: MOSFET N-CH 100V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 270µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 50 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+4.68 EUR
Mindestbestellmenge: 1000
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IPB020N10N5LFATMA1 IPB020N10N5LFATMA1 Infineon Technologies Infineon-IPB020N10N5LF-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5b253d4c3c67 Description: MOSFET N-CH 100V 176A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 176A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 270µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 50 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+3.93 EUR
Mindestbestellmenge: 1000
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SIPC10N80C3X1SA1
Hersteller: Infineon Technologies
Description: TRANSISTOR N-CH
Produkt ist nicht verfügbar
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SIPC14N50C3X1SA2
Hersteller: Infineon Technologies
Description: TRANSISTOR N-CH
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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SIPC14N60C3X1SA1
Hersteller: Infineon Technologies
Description: TRANSISTOR N-CH
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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SIPC14N80C3X1SA2
Hersteller: Infineon Technologies
Description: TRANSISTOR N-CH
Produkt ist nicht verfügbar
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SIPC18N60CFDX1SA1
Hersteller: Infineon Technologies
Description: TRANSISTOR N-CH
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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SIPC19N80C3X1SA1
Hersteller: Infineon Technologies
Description: TRANSISTOR N-CH
Produkt ist nicht verfügbar
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SIPC26N50C3X1SA2
Hersteller: Infineon Technologies
Description: TRANSISTOR N-CH
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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SIPC30N60C3X1SA2
Hersteller: Infineon Technologies
Description: TRANSISTOR N-CH
Produkt ist nicht verfügbar
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SIPC44N50C3X1SA2
Hersteller: Infineon Technologies
Description: TRANSISTOR N-CH
Produkt ist nicht verfügbar
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SIPC46N60C3X1SA1
Hersteller: Infineon Technologies
Description: TRANSISTOR N-CH
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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SIPC46N60CFDX1SA1
Hersteller: Infineon Technologies
Description: TRANSISTOR N-CH
Produkt ist nicht verfügbar
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SIPC69N60C3X1SA1
Hersteller: Infineon Technologies
Description: TRANSISTOR N-CH
Produkt ist nicht verfügbar
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SIPC69N65C3X1SA1
Hersteller: Infineon Technologies
Description: TRANSISTOR N-CH
Packaging: Bulk
Produkt ist nicht verfügbar
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SISC185N06LX1SA1
Hersteller: Infineon Technologies
Description: TRANSISTOR P-CH BARE DIE
Produkt ist nicht verfügbar
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SLE66R01PNNBX1SA2 Infineon-SLE+66R01PN-DS-v11_11-EN.pdf?fileId=5546d46250cc1fdf015124849d2c338e
Hersteller: Infineon Technologies
Description: IC SECURITY CHIP CARD CTLR
Produkt ist nicht verfügbar
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SLE66R35RNBX1SA1
Hersteller: Infineon Technologies
Description: IC SECURITY CHIP CARD CTLR
Produkt ist nicht verfügbar
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SRF55V02PHCNBX1SA1
Hersteller: Infineon Technologies
Description: IC RFID TRANSP 13.56MHZ
Produkt ist nicht verfügbar
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SRF55V10PHCNBX1SA1
Hersteller: Infineon Technologies
Description: IC RFID TRANSP 13.56MHZ
Produkt ist nicht verfügbar
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TLE4984CXAAF47XAMA1
Hersteller: Infineon Technologies
Description: IC SPEED SENSOR MAGN PG-SSO-3
Produkt ist nicht verfügbar
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TLE5027CE6747HAMA1 TLE5027C_PB_7-2-13.pdf
Hersteller: Infineon Technologies
Description: SENSOR MAGNETORESISTIVE PWM 3SIP
Packaging: Tape & Box (TB)
Package / Case: 3-SSIP Module
Output Type: PWM
Mounting Type: Through Hole
Axis: X, Y, Z
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Magnetoresistive
Supplier Device Package: PG-SSO-3-92
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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SLE66R35E7MCC2ZZZA1
Hersteller: Infineon Technologies
Description: IC SECURITY CHIP CARD CTLR SMD
Produkt ist nicht verfügbar
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SLE66R35IMCC8XHSA1
Hersteller: Infineon Technologies
Description: IC SECURITY CHIP CARD CTLR SMD
Produkt ist nicht verfügbar
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SLE66R35MCC8IXHSA1
Hersteller: Infineon Technologies
Description: IC SECURITY CHIP CARD CTLR SMD
Produkt ist nicht verfügbar
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SLE66R35RMCC2XHSA1
Hersteller: Infineon Technologies
Description: IC SECURITY CHIP CARD CTLR SMD
Produkt ist nicht verfügbar
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SLE66R35RMCC8IXHSA1
Hersteller: Infineon Technologies
Description: IC SECURITY CHIP CARD CTLR SMD
Produkt ist nicht verfügbar
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SLE66R35RMCC8XHSA1
Hersteller: Infineon Technologies
Description: IC SECURITY CHIP CARD CTLR SMD
Produkt ist nicht verfügbar
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SRF55V02PHCMCC2ZZZA1
Hersteller: Infineon Technologies
Description: IC RFID TRANSP 13.56MHZ MCC2-2
Produkt ist nicht verfügbar
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SRF55V02PMCC8XHSA1
Hersteller: Infineon Technologies
Description: IC RFID TRANSP 13.56MHZ MCC2-2
Produkt ist nicht verfügbar
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SRF55V02SMCC8ZZZA1
Hersteller: Infineon Technologies
Description: IC RFID TRANSP 13.56MHZ MCC2-2
Produkt ist nicht verfügbar
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SRF55V10PMCC8XHSA1
Hersteller: Infineon Technologies
Description: IC RFID TRANSP 13.56MHZ MCC2-2
Produkt ist nicht verfügbar
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SRF55V10SMCC8ZZZA1
Hersteller: Infineon Technologies
Description: IC RFID TRANSP 13.56MHZ MCC2-2
Produkt ist nicht verfügbar
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1EDI2010ASXUMA1 1EDI2010AS-ISO-DS-v02_10.pdf
1EDI2010ASXUMA1
Hersteller: Infineon Technologies
Description: DGT ISO 3.75KV 1CH GT DVR DSO36
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Voltage - Isolation: 3750Vrms
Supplier Device Package: PG-DSO-36-63
Rise / Fall Time (Typ): 120ns, 150ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 13V ~ 18V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+9.66 EUR
Mindestbestellmenge: 1000
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2EDN7424FXTMA1 Infineon-2EDN7424F-DS-v02_00-EN.pdf?fileId=5546d4625c54d85b015c5e4ef0083f67
2EDN7424FXTMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8-60
Rise / Fall Time (Typ): 6.4ns, 5.4ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.3V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.80 EUR
Mindestbestellmenge: 2500
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2EDN7424RXUMA1 Infineon-2EDN7424R-DS-v02_00-EN.pdf?fileId=5546d4625c54d85b015c5e5812b13f6b
2EDN7424RXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Rise / Fall Time (Typ): 6.4ns, 5.4ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.3V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AIHD03N60RFATMA1
AIHD03N60RFATMA1
Hersteller: Infineon Technologies
Description: IC DISCRETE 600V TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 2.5A
Supplier Device Package: PG-TO252-3-313
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 10ns/128ns
Switching Energy: 50µJ (on), 40µJ (off)
Test Condition: 400V, 2.5A, 68Ohm, 15V
Gate Charge: 17.1 nC
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 7.5 A
Power - Max: 53.6 W
Produkt ist nicht verfügbar
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AIHD04N60RATMA1
AIHD04N60RATMA1
Hersteller: Infineon Technologies
Description: IC DISCRETE 600V TO252-3
Produkt ist nicht verfügbar
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AIHD04N60RFATMA1
AIHD04N60RFATMA1
Hersteller: Infineon Technologies
Description: IC DISCRETE 600V TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
Supplier Device Package: PG-TO252-3-313
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/116ns
Switching Energy: 60µJ (on), 50µJ (off)
Test Condition: 400V, 4A, 43Ohm, 15V
Gate Charge: 27 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 75 W
Produkt ist nicht verfügbar
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AIHD06N60RATMA1
AIHD06N60RATMA1
Hersteller: Infineon Technologies
Description: IC DISCRETE 600V TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
Supplier Device Package: PG-TO252-3-313
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/127ns
Switching Energy: 110µJ (on), 220µJ (off)
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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AIHD06N60RFATMA1
AIHD06N60RFATMA1
Hersteller: Infineon Technologies
Description: IC DISCRETE 600V TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
Supplier Device Package: PG-TO252-3-313
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 8ns/105ns
Switching Energy: 90µJ (on), 90µJ (off)
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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AIHD10N60RATMA1 Infineon-AIHD10N60R-DS-v02_01-EN.pdf?fileId=5546d4625c167129015c5382e26d7caf
Hersteller: Infineon Technologies
Description: IC DISCRETE 600V TO252-3
Produkt ist nicht verfügbar
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AIHD10N60RFATMA1 Infineon-AIHD10N60RF-DS-v02_01-EN.pdf?fileId=5546d4625c167129015c5382e7cf7cb1
Hersteller: Infineon Technologies
Description: IC DISCRETE 600V TO252-3
Produkt ist nicht verfügbar
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AIHD15N60RATMA1
AIHD15N60RATMA1
Hersteller: Infineon Technologies
Description: IC DISCRETE 600V TO252-3
Produkt ist nicht verfügbar
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AIHD15N60RFATMA1
AIHD15N60RFATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: PG-TO252-3-313
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/160ns
Switching Energy: 270µJ (on), 250µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 240 W
Produkt ist nicht verfügbar
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AIKB20N60CTATMA1 Infineon-AIKB20N60CT-DS-v02_01-EN.pdf?fileId=5546d4625c167129015c5382a94c7c95
AIKB20N60CTATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 40A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/199ns
Switching Energy: 310µJ (on), 460µJ (off)
Test Condition: 600V, 20A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 156 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+2.86 EUR
Mindestbestellmenge: 1000
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AUIRS1170STR Infineon-AUIRS1170S-DS-v02_30-EN.pdf?fileId=5546d46259d9a4bf0159da788eef0681
AUIRS1170STR
Hersteller: Infineon Technologies
Description: IC GATE DRIVER 200V 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Voltage - Input: 200V
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 11V ~ 18V
Applications: Secondary-Side Controller
Supplier Device Package: PG-DSO-8-900
Current - Supply: 45 mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BSC0993NDATMA1 Infineon-BSC0993ND-DS-v02_00-EN.pdf?fileId=5546d46258fc0bc101598dddfb2c616c
BSC0993NDATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 17A TISON8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 5mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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BSC13DN30NSFDATMA1 Infineon-BSC13DN30NSFD-DS-v02_01-EN.pdf?fileId=5546d46259b0420a0159d5c940fc0d9a
BSC13DN30NSFDATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 300V 16A TDSON-8-1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 16A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 150 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
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BSC350N20NSFDATMA1 Infineon-BSC350N20NSFD-DS-v02_01-EN.pdf?fileId=5546d46259b0420a0159d6094ce00ea0
BSC350N20NSFDATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 35A TDSON-8-1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 35A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 100 V
Produkt ist nicht verfügbar
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BSC670N25NSFDATMA1 Infineon-BSC670N25NSFD-DS-v02_01-EN.pdf?fileId=5546d46259b0420a0159d61b96e90ee7
BSC670N25NSFDATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 24A TDSON-8-1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 24A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 125 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+2.29 EUR
Mindestbestellmenge: 5000
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BSZ0589NSATMA1 Infineon-BSZ0589NS-DS-v02_00-EN.pdf?fileId=5546d46258fc0bc101598da704fa60e0
BSZ0589NSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 17A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 8A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.59 EUR
Mindestbestellmenge: 5000
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BTS3125EJXUMA1 Infineon-BTS3125EJ-DS-v01_00-EN.pdf?fileId=5546d462576f34750157bea1db0c43fd
BTS3125EJXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TDSO-8
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 31V (Max)
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 10A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-8-31
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.68 EUR
Mindestbestellmenge: 3000
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BTT60302EKBXUMA1 BTT6030-2EKB.pdf
BTT60302EKBXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 32mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-40-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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ESD233B1W0201E6327XTSA1 Infineon-ESD233-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d4625cc9456a015ce93607634882
ESD233B1W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5.5VWM 13VC WLL-2-1
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Amplification
Capacitance @ Frequency: 33pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: SG-WLL-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.5V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 70W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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ESD237B1W0201E6327XTSA1 Infineon-ESD237-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d4625cc9456a015ce9486a10488e
ESD237B1W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 8VWM 17VC WLL-2-1
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 85°C
Applications: General Purpose
Capacitance @ Frequency: 7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 8V (Max)
Supplier Device Package: WLL-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9V
Voltage - Clamping (Max) @ Ipp: 17V (Typ)
Power - Peak Pulse: 42W
Power Line Protection: No
Produkt ist nicht verfügbar
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IAUT165N08S5N029ATMA2 Infineon-IAUT165N08S5N029-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fda2c4bd0569
IAUT165N08S5N029ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 165A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 165A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6370 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ICE5QR0680AGXUMA1 INFN-S-A0003555962-1.pdf?t.download=true&u=5oefqw
ICE5QR0680AGXUMA1
Hersteller: Infineon Technologies
Description: IC CTLR QUASI-RES 12SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Not For New Designs
Power (Watts): 77 W
Produkt ist nicht verfügbar
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ICE5QR4770AGXUMA1 INFN-S-A0003555962-1.pdf?t.download=true&u=5oefqw
ICE5QR4770AGXUMA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Not For New Designs
Power (Watts): 27 W
Produkt ist nicht verfügbar
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IDP2321XUMA1
Hersteller: Infineon Technologies
Description: IC AC/DC DGTL PLATFORM 16SOIC
Produkt ist nicht verfügbar
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IPB017N10N5LFATMA1 Infineon-IPB017N10N5LF-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5b379cf73c7f
IPB017N10N5LFATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 270µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 50 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+4.68 EUR
Mindestbestellmenge: 1000
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IPB020N10N5LFATMA1 Infineon-IPB020N10N5LF-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5b253d4c3c67
IPB020N10N5LFATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 176A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 176A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 270µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 50 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+3.93 EUR
Mindestbestellmenge: 1000
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