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FS3L50R07W2H3FB11BPSA1 FS3L50R07W2H3FB11BPSA1 Infineon Technologies Infineon-FS3L50R07W2H3F_B11-DS-v03_02-EN.pdf?fileId=db3a30433fe811c7013fec12b85d3c49 Description: IGBT MOD 650V 50A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
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FS3L30R07W2H3FB11BPSA1 Infineon Technologies FS3L30R07W2H3F_B11_Rev3.0_2014-07-22.pdf Description: MOD DIODE BRIDGE EASY2B-2-1
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CP8173BTT Infineon Technologies Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CP8173CTT Infineon Technologies Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CP8174ATT Infineon Technologies Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CP8174BTT Infineon Technologies Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CP8176ATT Infineon Technologies Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CP8176BTT Infineon Technologies Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CP8173BT Infineon Technologies Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CP8173CT Infineon Technologies Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CP8174AT Infineon Technologies Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CP8174BT Infineon Technologies Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CP8176BT Infineon Technologies Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
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5962F1123501QXA Infineon Technologies CYRS1049DV33_RevF_Nov17,14.pdf Description: IC SRAM 4MBIT PAR 36CFLATPACK
Packaging: Tube
Package / Case: 36-CFlatPack
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Clock Frequency: 83 MHz
Memory Format: SRAM
Supplier Device Package: 36-Ceramic FlatPack
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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TLE6251DSXUMA2 TLE6251DSXUMA2 Infineon Technologies Infineon-TLE6251DS-DS-v03_10-EN.pdf?fileId=5546d46259d9a4bf015a3d2d98f4606e Description: IC TRANSCEIVER FULL 1/1 PGDSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1MBd
Protocol: CANbus
Supplier Device Package: PG-DSO-8
Receiver Hysteresis: 200 mV
Duplex: Full
Part Status: Not For New Designs
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10+2.48 EUR
25+2.26 EUR
100+2.02 EUR
250+1.91 EUR
500+1.84 EUR
1000+1.78 EUR
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TLE72592GEXUMA4 TLE72592GEXUMA4 Infineon Technologies Infineon-TLE7259-2GE-DS-v01_50-EN.pdf?fileId=5546d46259d9a4bf015a3d11de035e87 Description: IC TRANSCEIVER FULL 1/1 PGDSO816
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 7V ~ 27V
Number of Drivers/Receivers: 1/1
Data Rate: 20kBd
Protocol: LINbus
Supplier Device Package: PG-DSO-8-16
Receiver Hysteresis: 300 mV
Duplex: Full
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TLE72593GEXUMA3 TLE72593GEXUMA3 Infineon Technologies Infineon-TLE7259-3-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a3d11e9bd5e8a Description: IC TRANSCEIVER 1/1 PGDSO816
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 27V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LINbus
Supplier Device Package: PG-DSO-8-16
Receiver Hysteresis: 120 mV
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13+1.36 EUR
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100+1.09 EUR
250+1.02 EUR
500+0.98 EUR
1000+0.95 EUR
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CY90F457PMCR-G-N9E1 CY90F457PMCR-G-N9E1 Infineon Technologies Description: IC MCU 16BIT 64KB FLASH 48LQFP
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TLE4278GNT TLE4278GNT Infineon Technologies Infineon-TLE4278G-DS-v01_40-EN.pdf?fileId=5546d46258fc0bc101595f8e7fcd1f9f Description: IC REG LINEAR 5V 150MA DSO14-30
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BGS13SN9E6327XTSA1 BGS13SN9E6327XTSA1 Infineon Technologies Description: IC RF SWITCH SP3T TSNP
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BTS54220LBFXUMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC PWR SWITCH HISIDE PG-TSON-24
Packaging: Tape & Reel (TR)
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BTS56033LBAXUMA1 Infineon Technologies Automotive_Application_Guide_2016_BR.PDF?fileId=5546d46158f23e7b0158f8cac4de0051 Description: IC PWR SWITCH HISIDE PG-TSON-24
Packaging: Tape & Reel (TR)
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TLE42694GMXUMA2 TLE42694GMXUMA2 Infineon Technologies Infineon-TLE42694-2EL-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159f967f7863e53 Description: IC REG LINEAR 5V 100MA PG-DSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 280 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Part Status: Active
PSRR: 70dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 8 mA
Grade: Automotive
Qualification: AEC-Q100
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TLE42794GMXUMA2 TLE42794GMXUMA2 Infineon Technologies Infineon-TLE42794-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8e494d1f80 Description: IC REG LINEAR 5V 100MA PG-DSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 280 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Part Status: Active
PSRR: 70dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 8 mA
Grade: Automotive
Qualification: AEC-Q100
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TLE62512GXUMA3 TLE62512GXUMA3 Infineon Technologies Infineon-TLE6251-2G-DS-v01_20-EN.pdf?fileId=5546d4625996c0c30159a766fb9977b8 Description: IC TRANSCEIVER HALF 1/1 PGDSO14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Protocol: CANbus
Supplier Device Package: PG-DSO-14
Receiver Hysteresis: 100 mV
Duplex: Half
Part Status: Not For New Designs
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TLE62513GXUMA2 TLE62513GXUMA2 Infineon Technologies Infineon-TLE6251-3G-DS-v01_20-EN.pdf?fileId=5546d4625996c0c30159a766edfc77b5 Description: IC TRANSCEIVER HALF 1/1 PGDSO14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Protocol: CANbus
Supplier Device Package: PG-DSO-14
Receiver Hysteresis: 100 mV
Duplex: Half
Part Status: Not For New Designs
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TLE42694GMXUMA2 TLE42694GMXUMA2 Infineon Technologies Infineon-TLE42694-2EL-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159f967f7863e53 Description: IC REG LINEAR 5V 100MA PG-DSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 280 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Part Status: Active
PSRR: 70dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 8 mA
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE42794GMXUMA2 TLE42794GMXUMA2 Infineon Technologies Infineon-TLE42794-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8e494d1f80 Description: IC REG LINEAR 5V 100MA PG-DSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 280 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Part Status: Active
PSRR: 70dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 8 mA
Grade: Automotive
Qualification: AEC-Q100
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TLE62512GXUMA3 TLE62512GXUMA3 Infineon Technologies Infineon-TLE6251-2G-DS-v01_20-EN.pdf?fileId=5546d4625996c0c30159a766fb9977b8 Description: IC TRANSCEIVER HALF 1/1 PGDSO14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Protocol: CANbus
Supplier Device Package: PG-DSO-14
Receiver Hysteresis: 100 mV
Duplex: Half
Part Status: Not For New Designs
auf Bestellung 842 Stücke:
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5+4.36 EUR
10+3.26 EUR
25+2.99 EUR
100+2.68 EUR
250+2.54 EUR
500+2.45 EUR
Mindestbestellmenge: 5
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TLE62513GXUMA2 TLE62513GXUMA2 Infineon Technologies Infineon-TLE6251-3G-DS-v01_20-EN.pdf?fileId=5546d4625996c0c30159a766edfc77b5 Description: IC TRANSCEIVER HALF 1/1 PGDSO14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Protocol: CANbus
Supplier Device Package: PG-DSO-14
Receiver Hysteresis: 100 mV
Duplex: Half
Part Status: Not For New Designs
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IDC08S120EX1SA3 Infineon Technologies IDC08S120E_Ed2.2_9-6-12.pdf Description: DIODE SIL CARB 1.2KV 7.5A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 380pF @ 1V, 1MHz
Current - Average Rectified (Io): 7.5A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 7.5 A
Current - Reverse Leakage @ Vr: 180 µA @ 1200 V
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IDC08S120EX7SA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: DIODE SIL CARB 1.2KV 7.5A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 380pF @ 1V, 1MHz
Current - Average Rectified (Io): 7.5A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 7.5 A
Current - Reverse Leakage @ Vr: 180 µA @ 1200 V
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BSZ0909NDXTMA1 BSZ0909NDXTMA1 Infineon Technologies Infineon-BSZ0909ND-DS-v02_00-EN.pdf?fileId=5546d46258f240be0158f857c3300399 Description: MOSFET 2N-CH 30V 20A WISON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 17W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 15V
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-WISON-8
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IRUPFC2 Infineon Technologies Infineon-aneval_201511_pl16_012-AN-v02_00-EN.pdf?fileId=5546d462533600a40153559ff7761263 Description: KIT DES PFC
Packaging: Box
Function: Power Factor Correction
Type: Power Management
Utilized IC / Part: IRS2505L
Supplied Contents: Board(s)
Part Status: Active
Produkt ist nicht verfügbar
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IR3883MTRPBF IR3883MTRPBF Infineon Technologies Infineon-IR3883MTRPBF-DS-v01_00-EN.pdf?fileId=5546d462584d1d4a01586524b13e074c Description: IC REG BUCK ADJ 3A 16PQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 800kHz
Voltage - Input (Max): 14V
Topology: Buck
Supplier Device Package: 16-PQFN (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 0.5V
Part Status: Active
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3000+1.11 EUR
6000+1.09 EUR
9000+1.07 EUR
Mindestbestellmenge: 3000
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IR3883MTRPBF IR3883MTRPBF Infineon Technologies Infineon-IR3883MTRPBF-DS-v01_00-EN.pdf?fileId=5546d462584d1d4a01586524b13e074c Description: IC REG BUCK ADJ 3A 16PQFN
Packaging: Cut Tape (CT)
Package / Case: 16-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 800kHz
Voltage - Input (Max): 14V
Topology: Buck
Supplier Device Package: 16-PQFN (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 0.5V
Part Status: Active
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8+2.25 EUR
11+1.65 EUR
25+1.5 EUR
100+1.33 EUR
250+1.25 EUR
500+1.2 EUR
1000+1.16 EUR
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IPS040N03LGAKMA1 IPS040N03LGAKMA1 Infineon Technologies IPx040N03L_G_rev2.1_2010-04-07.pdf Description: MOSFET N-CH 30V 90A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V
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IPS050N03LGBKMA1 IPS050N03LGBKMA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: MOSFET N-CHANNEL 30V 50A TO251-3
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IPS060N03LGBKMA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: MOSFET N-CHANNEL 30V 50A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
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IPS075N03LGBKMA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: MOSFET N-CHANNEL 30V 50A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
Produkt ist nicht verfügbar
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IPS090N03LGBKMA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: MOSFET N-CHANNEL 30V 40A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Produkt ist nicht verfügbar
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IPD60R1K5CEAUMA1 IPD60R1K5CEAUMA1 Infineon Technologies Infineon-IPD60R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7c89cc51e98 Description: MOSFET N-CH 600V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 10V
Power Dissipation (Max): 49W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
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IPD50R280CEAUMA1 IPD50R280CEAUMA1 Infineon Technologies Infineon-IPD50R280CE-DS-v02_03-EN.pdf?fileId=db3a3043382e8373013850fd9c9b0fae Description: MOSFET N-CH 500V 13A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.2A, 13V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 350µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 773 pF @ 100 V
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IPD50R500CEAUMA1 IPD50R500CEAUMA1 Infineon Technologies dgdl?fileId=db3a3043382e83730138514ff7881004 Description: MOSFET N-CH 500V 7.6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 2.3A, 13V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 433 pF @ 100 V
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IRL60HS118 IRL60HS118 Infineon Technologies Infineon-IRL60HS118-DS-v01_02-EN.pdf?fileId=5546d46259d9a4bf015a4b3b35de1193 Description: MOSFET N-CH 60V 18.5A 6PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 11A, 10V
Power Dissipation (Max): 11.5W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 10µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
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4000+0.52 EUR
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Mindestbestellmenge: 4000
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IRL80HS120 IRL80HS120 Infineon Technologies Infineon-IRL80HS120-DS-v01_02-EN.pdf?fileId=5546d46259d9a4bf015a4b3b1df71191 Description: MOSFET N-CH 80V 12.5A 6PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7.5A, 10V
Power Dissipation (Max): 11.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 10µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
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4000+0.57 EUR
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IRL60HS118 IRL60HS118 Infineon Technologies Infineon-IRL60HS118-DS-v01_02-EN.pdf?fileId=5546d46259d9a4bf015a4b3b35de1193 Description: MOSFET N-CH 60V 18.5A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 11A, 10V
Power Dissipation (Max): 11.5W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 10µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
auf Bestellung 30802 Stücke:
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9+2.01 EUR
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IDK03G65C5XTMA2 IDK03G65C5XTMA2 Infineon Technologies Infineon-IDK03G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142eb7618470089 Description: DIODE SIL CARB 650V 3A PGTO2632
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 100pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 650 V
Produkt ist nicht verfügbar
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IDH02G65C5XKSA2 IDH02G65C5XKSA2 Infineon Technologies Infineon-IDH02G65C5-DS-v02_02-en.pdf?fileId=db3a304339dcf4b1013a030ab96758eb Description: DIODE SIL CARB 650V 2A PGTO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Produkt ist nicht verfügbar
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IDH04G65C5XKSA2 IDH04G65C5XKSA2 Infineon Technologies IDH04G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a30431ddc9372011ed0010fda1bd3&fileId=db3a304339dcf4b1013a033ff5d95947 Description: DIODE SIL CARB 650V 4A TO220-2-1
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
auf Bestellung 1636 Stücke:
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IDW10G65C5XKSA1 IDW10G65C5XKSA1 Infineon Technologies IDW10G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a304339dcf4b10139fc597c6800fc Description: DIODE SIL CARB 650V 10A PGTO2473
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 180 µA @ 650 V
auf Bestellung 239 Stücke:
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IDW12G65C5XKSA1 IDW12G65C5XKSA1 Infineon Technologies IDW12G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4699ca7206f Description: DIODE SIL CARB 650V 12A PGTO2473
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 360pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 190 µA @ 650 V
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IDW24G65C5BXKSA2 IDW24G65C5BXKSA2 Infineon Technologies Infineon-IDW24G65C5B-DS-v02_00-EN.pdf?fileId=5546d4624e24005f014e44b312b44906 Description: DIODE SIL CARB 650V 12A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 360pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 190 µA @ 650 V
auf Bestellung 240 Stücke:
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IDW40G65C5BXKSA2 IDW40G65C5BXKSA2 Infineon Technologies Infineon-IDW40G65C5B-DS-v02_00-EN.pdf?fileId=5546d4624e24005f014e451799b149e1 Description: DIODE SIL CARB 650V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 590pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 210 µA @ 650 V
auf Bestellung 344 Stücke:
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TLE7250GVIOXUMA2 TLE7250GVIOXUMA2 Infineon Technologies Infineon-TLE7250GVIO-DS-v01_10-EN.pdf?fileId=5546d46259d9a4bf015a3cf633b45e56 Description: IC TRANSCEIVER HALF 1/1 PGDSO816
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8-16
Receiver Hysteresis: 100 mV
Duplex: Half
Part Status: Not For New Designs
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IDT04S60CHKSA1 Infineon Technologies Description: DIODE SCHOTTKY 600V TO220-2
Produkt ist nicht verfügbar
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IDT08S60CHKSA1 Infineon Technologies Description: DIODE SCHOTTKY 600V TO220-2
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IDT16S60CHKSA1 Infineon Technologies Description: DIODE SCHOTTKY 600V TO220-2
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ICE5QSAGXUMA1 ICE5QSAGXUMA1 Infineon Technologies Infineon-ICE5QSAG-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a4af1df9b1119 Description: IC OFFLN CTRLR QUASI-RESON DSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Not For New Designs
Power (Watts): 109 W
Produkt ist nicht verfügbar
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ICE5QSAGXUMA1 ICE5QSAGXUMA1 Infineon Technologies Infineon-ICE5QSAG-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a4af1df9b1119 Description: IC OFFLN CTRLR QUASI-RESON DSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Not For New Designs
Power (Watts): 109 W
auf Bestellung 2228 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.43 EUR
10+1.77 EUR
25+1.6 EUR
100+1.42 EUR
250+1.34 EUR
500+1.29 EUR
1000+1.24 EUR
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FS3L50R07W2H3FB11BPSA1 Infineon-FS3L50R07W2H3F_B11-DS-v03_02-EN.pdf?fileId=db3a30433fe811c7013fec12b85d3c49
FS3L50R07W2H3FB11BPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 650V 50A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
Produkt ist nicht verfügbar
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FS3L30R07W2H3FB11BPSA1 FS3L30R07W2H3F_B11_Rev3.0_2014-07-22.pdf
Hersteller: Infineon Technologies
Description: MOD DIODE BRIDGE EASY2B-2-1
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CP8173BTT
Hersteller: Infineon Technologies
Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CP8173CTT
Hersteller: Infineon Technologies
Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CP8174ATT
Hersteller: Infineon Technologies
Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CP8174BTT
Hersteller: Infineon Technologies
Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CP8176ATT
Hersteller: Infineon Technologies
Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CP8176BTT
Hersteller: Infineon Technologies
Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CP8173BT
Hersteller: Infineon Technologies
Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CP8173CT
Hersteller: Infineon Technologies
Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CP8174AT
Hersteller: Infineon Technologies
Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CP8174BT
Hersteller: Infineon Technologies
Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CP8176BT
Hersteller: Infineon Technologies
Description: IC MCU CAPSENSE PLUS 56QFN
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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5962F1123501QXA CYRS1049DV33_RevF_Nov17,14.pdf
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PAR 36CFLATPACK
Packaging: Tube
Package / Case: 36-CFlatPack
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Clock Frequency: 83 MHz
Memory Format: SRAM
Supplier Device Package: 36-Ceramic FlatPack
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLE6251DSXUMA2 Infineon-TLE6251DS-DS-v03_10-EN.pdf?fileId=5546d46259d9a4bf015a3d2d98f4606e
TLE6251DSXUMA2
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER FULL 1/1 PGDSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1MBd
Protocol: CANbus
Supplier Device Package: PG-DSO-8
Receiver Hysteresis: 200 mV
Duplex: Full
Part Status: Not For New Designs
auf Bestellung 5312 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.34 EUR
10+2.48 EUR
25+2.26 EUR
100+2.02 EUR
250+1.91 EUR
500+1.84 EUR
1000+1.78 EUR
Mindestbestellmenge: 6
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TLE72592GEXUMA4 Infineon-TLE7259-2GE-DS-v01_50-EN.pdf?fileId=5546d46259d9a4bf015a3d11de035e87
TLE72592GEXUMA4
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER FULL 1/1 PGDSO816
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 7V ~ 27V
Number of Drivers/Receivers: 1/1
Data Rate: 20kBd
Protocol: LINbus
Supplier Device Package: PG-DSO-8-16
Receiver Hysteresis: 300 mV
Duplex: Full
Produkt ist nicht verfügbar
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TLE72593GEXUMA3 Infineon-TLE7259-3-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a3d11e9bd5e8a
TLE72593GEXUMA3
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER 1/1 PGDSO816
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 27V
Number of Drivers/Receivers: 1/1
Data Rate: 20kbps
Protocol: LINbus
Supplier Device Package: PG-DSO-8-16
Receiver Hysteresis: 120 mV
auf Bestellung 7529 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.87 EUR
13+1.36 EUR
25+1.23 EUR
100+1.09 EUR
250+1.02 EUR
500+0.98 EUR
1000+0.95 EUR
Mindestbestellmenge: 10
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CY90F457PMCR-G-N9E1
CY90F457PMCR-G-N9E1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 64KB FLASH 48LQFP
Produkt ist nicht verfügbar
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TLE4278GNT Infineon-TLE4278G-DS-v01_40-EN.pdf?fileId=5546d46258fc0bc101595f8e7fcd1f9f
TLE4278GNT
Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 150MA DSO14-30
Produkt ist nicht verfügbar
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BGS13SN9E6327XTSA1
BGS13SN9E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SP3T TSNP
Produkt ist nicht verfügbar
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BTS54220LBFXUMA1 fundamentals-of-power-semiconductors
Hersteller: Infineon Technologies
Description: IC PWR SWITCH HISIDE PG-TSON-24
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BTS56033LBAXUMA1 Automotive_Application_Guide_2016_BR.PDF?fileId=5546d46158f23e7b0158f8cac4de0051
Hersteller: Infineon Technologies
Description: IC PWR SWITCH HISIDE PG-TSON-24
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLE42694GMXUMA2 Infineon-TLE42694-2EL-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159f967f7863e53
TLE42694GMXUMA2
Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 100MA PG-DSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 280 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Part Status: Active
PSRR: 70dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 8 mA
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE42794GMXUMA2 Infineon-TLE42794-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8e494d1f80
TLE42794GMXUMA2
Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 100MA PG-DSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 280 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Part Status: Active
PSRR: 70dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 8 mA
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE62512GXUMA3 Infineon-TLE6251-2G-DS-v01_20-EN.pdf?fileId=5546d4625996c0c30159a766fb9977b8
TLE62512GXUMA3
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 PGDSO14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Protocol: CANbus
Supplier Device Package: PG-DSO-14
Receiver Hysteresis: 100 mV
Duplex: Half
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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TLE62513GXUMA2 Infineon-TLE6251-3G-DS-v01_20-EN.pdf?fileId=5546d4625996c0c30159a766edfc77b5
TLE62513GXUMA2
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 PGDSO14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Protocol: CANbus
Supplier Device Package: PG-DSO-14
Receiver Hysteresis: 100 mV
Duplex: Half
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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TLE42694GMXUMA2 Infineon-TLE42694-2EL-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159f967f7863e53
TLE42694GMXUMA2
Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 100MA PG-DSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 280 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Part Status: Active
PSRR: 70dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 8 mA
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE42794GMXUMA2 Infineon-TLE42794-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8e494d1f80
TLE42794GMXUMA2
Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 100MA PG-DSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 280 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Part Status: Active
PSRR: 70dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 8 mA
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE62512GXUMA3 Infineon-TLE6251-2G-DS-v01_20-EN.pdf?fileId=5546d4625996c0c30159a766fb9977b8
TLE62512GXUMA3
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 PGDSO14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Protocol: CANbus
Supplier Device Package: PG-DSO-14
Receiver Hysteresis: 100 mV
Duplex: Half
Part Status: Not For New Designs
auf Bestellung 842 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.36 EUR
10+3.26 EUR
25+2.99 EUR
100+2.68 EUR
250+2.54 EUR
500+2.45 EUR
Mindestbestellmenge: 5
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TLE62513GXUMA2 Infineon-TLE6251-3G-DS-v01_20-EN.pdf?fileId=5546d4625996c0c30159a766edfc77b5
TLE62513GXUMA2
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 PGDSO14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Protocol: CANbus
Supplier Device Package: PG-DSO-14
Receiver Hysteresis: 100 mV
Duplex: Half
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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IDC08S120EX1SA3 IDC08S120E_Ed2.2_9-6-12.pdf
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 1.2KV 7.5A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 380pF @ 1V, 1MHz
Current - Average Rectified (Io): 7.5A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 7.5 A
Current - Reverse Leakage @ Vr: 180 µA @ 1200 V
Produkt ist nicht verfügbar
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IDC08S120EX7SA1 Part_Number_Guide_Web.pdf
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 1.2KV 7.5A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 380pF @ 1V, 1MHz
Current - Average Rectified (Io): 7.5A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 7.5 A
Current - Reverse Leakage @ Vr: 180 µA @ 1200 V
Produkt ist nicht verfügbar
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BSZ0909NDXTMA1 Infineon-BSZ0909ND-DS-v02_00-EN.pdf?fileId=5546d46258f240be0158f857c3300399
BSZ0909NDXTMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 20A WISON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 17W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 15V
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-WISON-8
Produkt ist nicht verfügbar
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IRUPFC2 Infineon-aneval_201511_pl16_012-AN-v02_00-EN.pdf?fileId=5546d462533600a40153559ff7761263
Hersteller: Infineon Technologies
Description: KIT DES PFC
Packaging: Box
Function: Power Factor Correction
Type: Power Management
Utilized IC / Part: IRS2505L
Supplied Contents: Board(s)
Part Status: Active
Produkt ist nicht verfügbar
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IR3883MTRPBF Infineon-IR3883MTRPBF-DS-v01_00-EN.pdf?fileId=5546d462584d1d4a01586524b13e074c
IR3883MTRPBF
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 3A 16PQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 800kHz
Voltage - Input (Max): 14V
Topology: Buck
Supplier Device Package: 16-PQFN (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 0.5V
Part Status: Active
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.11 EUR
6000+1.09 EUR
9000+1.07 EUR
Mindestbestellmenge: 3000
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IR3883MTRPBF Infineon-IR3883MTRPBF-DS-v01_00-EN.pdf?fileId=5546d462584d1d4a01586524b13e074c
IR3883MTRPBF
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 3A 16PQFN
Packaging: Cut Tape (CT)
Package / Case: 16-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 800kHz
Voltage - Input (Max): 14V
Topology: Buck
Supplier Device Package: 16-PQFN (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 0.5V
Part Status: Active
auf Bestellung 11796 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.25 EUR
11+1.65 EUR
25+1.5 EUR
100+1.33 EUR
250+1.25 EUR
500+1.2 EUR
1000+1.16 EUR
Mindestbestellmenge: 8
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IPS040N03LGAKMA1 IPx040N03L_G_rev2.1_2010-04-07.pdf
IPS040N03LGAKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 90A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V
Produkt ist nicht verfügbar
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IPS050N03LGBKMA1 Part_Number_Guide_Web.pdf
IPS050N03LGBKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CHANNEL 30V 50A TO251-3
Produkt ist nicht verfügbar
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IPS060N03LGBKMA1 Part_Number_Guide_Web.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CHANNEL 30V 50A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
Produkt ist nicht verfügbar
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IPS075N03LGBKMA1 Part_Number_Guide_Web.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CHANNEL 30V 50A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
Produkt ist nicht verfügbar
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IPS090N03LGBKMA1 Part_Number_Guide_Web.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CHANNEL 30V 40A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Produkt ist nicht verfügbar
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IPD60R1K5CEAUMA1 Infineon-IPD60R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7c89cc51e98
IPD60R1K5CEAUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 10V
Power Dissipation (Max): 49W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
auf Bestellung 1946 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.25 EUR
21+0.85 EUR
100+0.55 EUR
500+0.42 EUR
1000+0.38 EUR
Mindestbestellmenge: 15
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IPD50R280CEAUMA1 Infineon-IPD50R280CE-DS-v02_03-EN.pdf?fileId=db3a3043382e8373013850fd9c9b0fae
IPD50R280CEAUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 13A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.2A, 13V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 350µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 773 pF @ 100 V
auf Bestellung 4155 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.03 EUR
10+2.04 EUR
100+1.52 EUR
500+1.21 EUR
1000+1.11 EUR
Mindestbestellmenge: 6
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IPD50R500CEAUMA1 dgdl?fileId=db3a3043382e83730138514ff7881004
IPD50R500CEAUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 7.6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 2.3A, 13V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 433 pF @ 100 V
auf Bestellung 15176 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.85 EUR
100+0.75 EUR
500+0.64 EUR
1000+0.58 EUR
Mindestbestellmenge: 21
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IRL60HS118 Infineon-IRL60HS118-DS-v01_02-EN.pdf?fileId=5546d46259d9a4bf015a4b3b35de1193
IRL60HS118
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 18.5A 6PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 11A, 10V
Power Dissipation (Max): 11.5W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 10µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.52 EUR
8000+0.5 EUR
Mindestbestellmenge: 4000
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IRL80HS120 Infineon-IRL80HS120-DS-v01_02-EN.pdf?fileId=5546d46259d9a4bf015a4b3b1df71191
IRL80HS120
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 12.5A 6PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7.5A, 10V
Power Dissipation (Max): 11.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 10µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.57 EUR
8000+0.56 EUR
Mindestbestellmenge: 4000
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IRL60HS118 Infineon-IRL60HS118-DS-v01_02-EN.pdf?fileId=5546d46259d9a4bf015a4b3b35de1193
IRL60HS118
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 18.5A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 11A, 10V
Power Dissipation (Max): 11.5W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 10µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
auf Bestellung 30802 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.01 EUR
17+1.1 EUR
100+0.89 EUR
500+0.69 EUR
1000+0.63 EUR
2000+0.58 EUR
Mindestbestellmenge: 9
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IDK03G65C5XTMA2 Infineon-IDK03G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142eb7618470089
IDK03G65C5XTMA2
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 3A PGTO2632
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 100pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 650 V
Produkt ist nicht verfügbar
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IDH02G65C5XKSA2 Infineon-IDH02G65C5-DS-v02_02-en.pdf?fileId=db3a304339dcf4b1013a030ab96758eb
IDH02G65C5XKSA2
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 2A PGTO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Produkt ist nicht verfügbar
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IDH04G65C5XKSA2 IDH04G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a30431ddc9372011ed0010fda1bd3&fileId=db3a304339dcf4b1013a033ff5d95947
IDH04G65C5XKSA2
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 4A TO220-2-1
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
auf Bestellung 1636 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.12 EUR
50+2.51 EUR
100+2.06 EUR
500+1.75 EUR
1000+1.48 EUR
Mindestbestellmenge: 6
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IDW10G65C5XKSA1 IDW10G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a304339dcf4b10139fc597c6800fc
IDW10G65C5XKSA1
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 10A PGTO2473
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 180 µA @ 650 V
auf Bestellung 239 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.86 EUR
30+3.78 EUR
120+3.08 EUR
Mindestbestellmenge: 3
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IDW12G65C5XKSA1 IDW12G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4699ca7206f
IDW12G65C5XKSA1
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 12A PGTO2473
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 360pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 190 µA @ 650 V
auf Bestellung 37 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.83 EUR
30+4.4 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IDW24G65C5BXKSA2 Infineon-IDW24G65C5B-DS-v02_00-EN.pdf?fileId=5546d4624e24005f014e44b312b44906
IDW24G65C5BXKSA2
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 12A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 360pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 190 µA @ 650 V
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18.62 EUR
10+15.96 EUR
240+12.52 EUR
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IDW40G65C5BXKSA2 Infineon-IDW40G65C5B-DS-v02_00-EN.pdf?fileId=5546d4624e24005f014e451799b149e1
IDW40G65C5BXKSA2
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 590pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 210 µA @ 650 V
auf Bestellung 344 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+27.39 EUR
30+22.17 EUR
120+20.87 EUR
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TLE7250GVIOXUMA2 Infineon-TLE7250GVIO-DS-v01_10-EN.pdf?fileId=5546d46259d9a4bf015a3cf633b45e56
TLE7250GVIOXUMA2
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 PGDSO816
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8-16
Receiver Hysteresis: 100 mV
Duplex: Half
Part Status: Not For New Designs
auf Bestellung 8101 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.41 EUR
10+2.53 EUR
25+2.3 EUR
100+2.06 EUR
250+1.95 EUR
500+1.88 EUR
1000+1.82 EUR
Mindestbestellmenge: 6
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IDT04S60CHKSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 600V TO220-2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDT08S60CHKSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 600V TO220-2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDT16S60CHKSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 600V TO220-2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ICE5QSAGXUMA1 Infineon-ICE5QSAG-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a4af1df9b1119
ICE5QSAGXUMA1
Hersteller: Infineon Technologies
Description: IC OFFLN CTRLR QUASI-RESON DSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Not For New Designs
Power (Watts): 109 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ICE5QSAGXUMA1 Infineon-ICE5QSAG-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a4af1df9b1119
ICE5QSAGXUMA1
Hersteller: Infineon Technologies
Description: IC OFFLN CTRLR QUASI-RESON DSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Not For New Designs
Power (Watts): 109 W
auf Bestellung 2228 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.43 EUR
10+1.77 EUR
25+1.6 EUR
100+1.42 EUR
250+1.34 EUR
500+1.29 EUR
1000+1.24 EUR
Mindestbestellmenge: 8
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