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IPA60R280P7SXKSA1 IPA60R280P7SXKSA1 Infineon Technologies Infineon-IPA60R280P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d3c00794f033f Description: MOSFET N-CH 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
auf Bestellung 742 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.5 EUR
50+0.84 EUR
100+0.83 EUR
500+0.8 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IPA60R280P7XKSA1 IPA60R280P7XKSA1 Infineon Technologies Infineon-IPA60R280P7-DS-v02_00-EN.pdf?fileId=5546d4625b10283a015b1f7bb1dd042e Description: MOSFET N-CH 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
Produkt ist nicht verfügbar
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IPA60R360P7SXKSA1 IPA60R360P7SXKSA1 Infineon Technologies Infineon-IPA60R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d55dbb6160fc7 Description: MOSFET N-CH 600V 9A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
auf Bestellung 4691 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.43 EUR
50+0.97 EUR
100+0.92 EUR
500+0.81 EUR
1000+0.74 EUR
2000+0.68 EUR
Mindestbestellmenge: 8
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IPA60R600P7SXKSA1 IPA60R600P7SXKSA1 Infineon Technologies Infineon-IPA60R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d3b403a7a02ca Description: MOSFET N-CH 600V 6A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 21W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
auf Bestellung 449 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.16 EUR
50+1.07 EUR
100+1 EUR
Mindestbestellmenge: 9
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IPA60R600P7XKSA1 IPA60R600P7XKSA1 Infineon Technologies Infineon-IPA60R600P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015ce923cb40487f Description: MOSFET N-CH 600V 6A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 21W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IPAN70R600P7SXKSA1 IPAN70R600P7SXKSA1 Infineon Technologies Infineon-IPAN70R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625acbae4c015ad1bc3b8a21b8 Description: MOSFET N-CH 700V 8.5A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.8A, 10V
Power Dissipation (Max): 24.9W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 400 V
Produkt ist nicht verfügbar
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IPAN80R360P7XKSA1 IPAN80R360P7XKSA1 Infineon Technologies Infineon-IPAN80R360P7-DS-v02_00-EN.pdf?fileId=5546d4625b62cd8a015bcdb8328d6d69 Description: MOSFET N-CH 800V 13A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.6A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 280µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 500 V
Produkt ist nicht verfügbar
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IPAW60R280P7SXKSA1 IPAW60R280P7SXKSA1 Infineon Technologies Infineon-IPAW60R280P7S-DS-v02_00-EN.pdf?fileId=5546d4625acbae4c015accfa9ada0268 Description: MOSFET N-CH 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO220-FP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPAW60R600P7SXKSA1 IPAW60R600P7SXKSA1 Infineon Technologies Infineon-IPAW60R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625acbae4c015accfac772026c Description: MOSFET N-CH 600V 6A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 21W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO220-FP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IPB032N10N5ATMA1 IPB032N10N5ATMA1 Infineon Technologies Infineon-IPB032N10N5-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b5c47b25335ca Description: MOSFET N-CH 100V 166A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 166A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 83A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 125µA
Supplier Device Package: PG-TO263-7
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 50 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+2.76 EUR
Mindestbestellmenge: 1000
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IPB048N15N5LFATMA1 IPB048N15N5LFATMA1 Infineon Technologies Infineon-IPB048N15N5LF-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b573da84a026c Description: MOSFET N-CH 150V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 100A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 255µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 75 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+6.86 EUR
Mindestbestellmenge: 1000
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IPB083N15N5LFATMA1 IPB083N15N5LFATMA1 Infineon Technologies Infineon-IPB083N15N5LF-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b57cf380303f5 Description: MOSFET N-CH 150V 105A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 100A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 134µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 75 V
Produkt ist nicht verfügbar
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IPD60R180P7SAUMA1 IPD60R180P7SAUMA1 Infineon Technologies Infineon-IPD60R180P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d55249fca0f9c Description: MOSFET N-CH 600V 18A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.95 EUR
5000+0.92 EUR
Mindestbestellmenge: 2500
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IPD60R280P7ATMA1 IPD60R280P7ATMA1 Infineon Technologies Infineon-IPD60R280P7-DS-v02_00-EN.pdf?fileId=5546d4625c54d85b015c5daa1fa44d37 Description: MOSFET N-CH 600V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R280P7SAUMA1 IPD60R280P7SAUMA1 Infineon Technologies Infineon-IPD60R280P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d54edbbd60f38 Description: MOSFET N-CH 600V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.72 EUR
5000+0.67 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R360P7SAUMA1 IPD60R360P7SAUMA1 Infineon Technologies Infineon-IPD60R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d550931ef0f70 Description: MOSFET N-CH 600V 9A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.58 EUR
5000+0.56 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R600P7SAUMA1 IPD60R600P7SAUMA1 Infineon Technologies Infineon-IPD60R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d50d9fe4c403c Description: MOSFET N-CH 600V 6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.44 EUR
5000+0.42 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IPN60R360P7SATMA1 IPN60R360P7SATMA1 Infineon Technologies Infineon-IPN60R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cf3d550b26150 Description: MOSFET N-CHANNEL 600V 9A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.55 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
IPN60R600P7SATMA1 IPN60R600P7SATMA1 Infineon Technologies Infineon-IPN60R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cf439eb6361b8 Description: MOSFET N-CHANNEL 600V 6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
Produkt ist nicht verfügbar
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IPN70R1K4P7SATMA1 IPN70R1K4P7SATMA1 Infineon Technologies Infineon-IPN70R1K4P7S-DS-v02_02-EN.pdf?fileId=5546d4625cc9456a015cf439fc7261ba Description: MOSFET N-CHANNEL 700V 4A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 700mA, 10V
Power Dissipation (Max): 6.2W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 158 pF @ 400 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.32 EUR
6000+0.29 EUR
9000+0.28 EUR
15000+0.27 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
IPN70R360P7SATMA1 IPN70R360P7SATMA1 Infineon Technologies Infineon-IPN70R360P7S-DS-v02_01-EN.pdf?fileId=5546d4625cc9456a015cf439d6ad61b3 Description: MOSFET N-CH 700V 12.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 3A, 10V
Power Dissipation (Max): 7.2W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 517 pF @ 400 V
Produkt ist nicht verfügbar
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IPN70R600P7SATMA1 IPN70R600P7SATMA1 Infineon Technologies Infineon-IPN70R600P7S-DS-v02_02-EN.pdf?fileId=5546d4625cc9456a015cf442fdaa61bc Description: MOSFET N-CH 700V 8.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.8A, 10V
Power Dissipation (Max): 6.9W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 400 V
Produkt ist nicht verfügbar
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IPN70R900P7SATMA1 IPN70R900P7SATMA1 Infineon Technologies Infineon-IPN70R900P7S-DS-v02_01-EN.pdf?fileId=5546d4625cc9456a015cf45549a461be Description: MOSFET N-CH 700V 6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.1A, 10V
Power Dissipation (Max): 6.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 211 pF @ 400 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.34 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
IPN80R900P7ATMA1 IPN80R900P7ATMA1 Infineon Technologies Infineon-IPN80R900P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cf4679a7e646f Description: MOSFET N-CHANNEL 800V 6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.2A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 110µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 500 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.68 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R060P7XKSA1 IPP60R060P7XKSA1 Infineon Technologies Infineon-IPP60R060P7-DS-v02_00-EN.pdf?fileId=5546d4625acbae4c015accdf20660227 Description: MOSFET N-CH 600V 48A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V
Produkt ist nicht verfügbar
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IPP60R120P7XKSA1 IPP60R120P7XKSA1 Infineon Technologies Infineon-IPP60R120P7-DS-v02_00-EN.pdf?fileId=5546d4625acbae4c015acd0f0fdf074f Description: MOSFET N-CH 600V 26A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 8.2A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 410µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 400 V
auf Bestellung 1465 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.24 EUR
50+2.7 EUR
100+2.57 EUR
500+2.16 EUR
1000+1.98 EUR
Mindestbestellmenge: 5
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IPP60R280P7XKSA1 IPP60R280P7XKSA1 Infineon Technologies Infineon-IPP60R280P7-DS-v02_00-EN.pdf?fileId=5546d4625b10283a015b1f973023047b Description: MOSFET N-CH 600V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
auf Bestellung 268 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.66 EUR
50+1.87 EUR
100+1.75 EUR
Mindestbestellmenge: 5
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IPW60R060P7XKSA1 IPW60R060P7XKSA1 Infineon Technologies Infineon-IPW60R060P7-DS-v02_00-EN.pdf?fileId=5546d4625acbae4c015acce82ba2022c Description: MOSFET N-CH 600V 48A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V
auf Bestellung 716 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.66 EUR
30+5.15 EUR
120+4.47 EUR
510+4.09 EUR
Mindestbestellmenge: 2
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IRPS5401MTRPBF IRPS5401MTRPBF Infineon Technologies Infineon-IRPS5401M-DS-v02_01-EN.pdf?fileId=5546d4625cc9456a015cd69d402139db Description: POL - SUPIRBUCK
Packaging: Tape & Reel (TR)
Package / Case: 56-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 6V ~ 14V
Applications: Power Management - Communications, Storage, Embedded Computing & High Density Multi-Rail Systems
Current - Supply: 40mA
Supplier Device Package: 56-QFN (7x7)
Part Status: Active
Produkt ist nicht verfügbar
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IRS2007SPBF IRS2007SPBF Infineon Technologies Infineon-IRS2007(S,M)-DataSheet-v01_00-EN.pdf?fileId=5546d46269e1c019016ae53e02c239bf&redirId=115114 Description: IC HALF BRIDGE DRVR 600MA 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 10V ~ 20V
Applications: Battery Powered
Current - Output / Channel: 600mA
Technology: Power MOSFET
Voltage - Load: 200V
Supplier Device Package: 8-SOIC
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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IRS2007STRPBF IRS2007STRPBF Infineon Technologies Infineon-IRS2007(S,M)-DataSheet-v01_00-EN.pdf?fileId=5546d46269e1c019016ae53e02c239bf&redirId=115114 Description: IC HALF BRIDGE DRVR 600MA 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 10V ~ 20V
Applications: Battery Powered
Current - Output / Channel: 600mA
Technology: Power MOSFET
Voltage - Load: 200V
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.64 EUR
Mindestbestellmenge: 2500
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SLF9630VQFN8XUMA2 SLF9630VQFN8XUMA2 Infineon Technologies Description: TRANSPORT TICKETING
Packaging: Tape & Reel (TR)
Package / Case: 8-VQFN Exposed Pad
Mounting Type: Surface Mount
Interface: ISO7816
Operating Temperature: -25°C ~ 85°C
Applications: Security
Core Processor: 16-Bit
Supplier Device Package: 8-VFQFPN (6x5)
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SLJ52ACA150A1VQFN32XUMA2 Infineon Technologies Description: AUTHENTICATION
Packaging: Tape & Reel (TR)
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLE4278GXUMA2 TLE4278GXUMA2 Infineon Technologies Description: IC REG LIN 5V 200MA PG-DSO-14-30
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14-30
Voltage - Output (Min/Fixed): 5V
Control Features: Reset, Watchdog
Grade: Automotive
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 12 mA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLF35584QKVS2XUMA2 TLF35584QKVS2XUMA2 Infineon Technologies Infineon-TLF35584QV-ProductOverview-DataSheet-v01_00-EN.pdf?fileId=5546d46279cccfdb0179ce150fc81cbf Description: IC REG AUTO APPL 1OUT LQFP64-18
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Voltage - Output: 3.3V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3V ~ 40V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Power Supply, Automotive Applications
Supplier Device Package: PG-LQFP-64-18
Part Status: Active
auf Bestellung 1900 Stücke:
Lieferzeit 10-14 Tag (e)
1900+6.26 EUR
Mindestbestellmenge: 1900
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TLF35584QVVS2XUMA2 TLF35584QVVS2XUMA2 Infineon Technologies Infineon-TLF35584QV-ProductOverview-DataSheet-v01_00-EN.pdf?fileId=5546d46279cccfdb0179ce150fc81cbf Description: IC REG AUTO APPL 1OUT VQFN-48-31
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 3.3V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3V ~ 40V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Power Supply, Automotive Applications
Supplier Device Package: PG-VQFN-48-31
Part Status: Active
Produkt ist nicht verfügbar
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TLS202B1MBV50HTSA1 TLS202B1MBV50HTSA1 Infineon Technologies Infineon-TLS202B1MB%20V50-DS-v01_00-EN.pdf?fileId=5546d4625e37f35a015e4c2775090ca8 Description: IC REG LIN 5V 150MA PG-SCT595-5
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 58dB (10kHz)
Voltage Dropout (Max): 0.57V @ 150mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 200 µA
Qualification: AEC-Q100
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.71 EUR
Mindestbestellmenge: 3000
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XMC4300F100K256AAXUMA1 XMC4300F100K256AAXUMA1 Infineon Technologies Infineon-XMC4300-DS-v01_00-EN.pdf?fileId=5546d462525dbac40152abc34fde16d8 Description: IC MCU 32BIT 256KB FLASH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 14x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, Ethernet, I2C, LINbus, MMC/SD, SPI, UART/USART, USB OTG, USIC
Peripherals: DMA, I2S, LED, POR, Touch-Sense, WDT
Supplier Device Package: PG-LQFP-100-25
Part Status: Active
Number of I/O: 75
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AUIRB24427S AUIRB24427S Infineon Technologies AUIRB24427S_9-29-14.pdf Description: IC GATE DRVR LOW-SIDE 8SOIC
Produkt ist nicht verfügbar
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IPS52GB Infineon Technologies Description: IC MOSFET POWER SWITCH TO220
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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MB3773PF-GT-BNDK5E1 Infineon Technologies MB3773_6-28-17.pdf Description: IC SUPERVISOR PWR SUP MONITOR
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB3773PF-GT-BND-K5ERE1 Infineon Technologies MB3773_6-28-17.pdf Description: IC POWER SUPPLY MONITOR
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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FF600R12IS4F Infineon Technologies Description: IGBT MOD 1200V 600A 3700W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3700 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 39 nF @ 25 V
Produkt ist nicht verfügbar
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IPN60R360P7SATMA1 IPN60R360P7SATMA1 Infineon Technologies Infineon-IPN60R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cf3d550b26150 Description: MOSFET N-CHANNEL 600V 9A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
auf Bestellung 5427 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.83 EUR
14+1.26 EUR
100+0.91 EUR
500+0.71 EUR
1000+0.64 EUR
Mindestbestellmenge: 10
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IPN60R600P7SATMA1 IPN60R600P7SATMA1 Infineon Technologies Infineon-IPN60R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cf439eb6361b8 Description: MOSFET N-CHANNEL 600V 6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
auf Bestellung 2706 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.71 EUR
16+1.16 EUR
100+0.78 EUR
500+0.63 EUR
1000+0.57 EUR
Mindestbestellmenge: 11
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IPN70R360P7SATMA1 IPN70R360P7SATMA1 Infineon Technologies Infineon-IPN70R360P7S-DS-v02_01-EN.pdf?fileId=5546d4625cc9456a015cf439d6ad61b3 Description: MOSFET N-CH 700V 12.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 3A, 10V
Power Dissipation (Max): 7.2W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 517 pF @ 400 V
auf Bestellung 141 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.67 EUR
16+1.13 EUR
100+0.82 EUR
Mindestbestellmenge: 11
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IPN70R600P7SATMA1 IPN70R600P7SATMA1 Infineon Technologies Infineon-IPN70R600P7S-DS-v02_02-EN.pdf?fileId=5546d4625cc9456a015cf442fdaa61bc Description: MOSFET N-CH 700V 8.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.8A, 10V
Power Dissipation (Max): 6.9W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 400 V
auf Bestellung 640 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.67 EUR
17+1.06 EUR
100+0.74 EUR
500+0.56 EUR
Mindestbestellmenge: 11
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IPN70R900P7SATMA1 IPN70R900P7SATMA1 Infineon Technologies Infineon-IPN70R900P7S-DS-v02_01-EN.pdf?fileId=5546d4625cc9456a015cf45549a461be Description: MOSFET N-CH 700V 6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.1A, 10V
Power Dissipation (Max): 6.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 211 pF @ 400 V
auf Bestellung 4869 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.21 EUR
21+0.87 EUR
100+0.6 EUR
500+0.48 EUR
1000+0.43 EUR
Mindestbestellmenge: 15
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IPN70R1K4P7SATMA1 IPN70R1K4P7SATMA1 Infineon Technologies Infineon-IPN70R1K4P7S-DS-v02_02-EN.pdf?fileId=5546d4625cc9456a015cf439fc7261ba Description: MOSFET N-CHANNEL 700V 4A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 700mA, 10V
Power Dissipation (Max): 6.2W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 158 pF @ 400 V
auf Bestellung 24003 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.23 EUR
22+0.82 EUR
100+0.55 EUR
500+0.41 EUR
1000+0.37 EUR
Mindestbestellmenge: 15
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IPN80R900P7ATMA1 IPN80R900P7ATMA1 Infineon Technologies Infineon-IPN80R900P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cf4679a7e646f Description: MOSFET N-CHANNEL 800V 6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.2A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 110µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 500 V
auf Bestellung 5073 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.5 EUR
11+1.61 EUR
100+1.08 EUR
500+0.84 EUR
1000+0.77 EUR
Mindestbestellmenge: 8
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IPD60R280P7ATMA1 IPD60R280P7ATMA1 Infineon Technologies Infineon-IPD60R280P7-DS-v02_00-EN.pdf?fileId=5546d4625c54d85b015c5daa1fa44d37 Description: MOSFET N-CH 600V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
Produkt ist nicht verfügbar
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IPD60R180P7SAUMA1 IPD60R180P7SAUMA1 Infineon Technologies Infineon-IPD60R180P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d55249fca0f9c Description: MOSFET N-CH 600V 18A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
auf Bestellung 13104 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.92 EUR
10+2.05 EUR
100+1.43 EUR
500+1.14 EUR
1000+1.07 EUR
Mindestbestellmenge: 7
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IPD60R280P7SAUMA1 IPD60R280P7SAUMA1 Infineon Technologies Infineon-IPD60R280P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d54edbbd60f38 Description: MOSFET N-CH 600V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
auf Bestellung 6888 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.71 EUR
11+1.72 EUR
100+1.15 EUR
500+0.91 EUR
1000+0.83 EUR
Mindestbestellmenge: 7
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IPD60R360P7SAUMA1 IPD60R360P7SAUMA1 Infineon Technologies Infineon-IPD60R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d550931ef0f70 Description: MOSFET N-CH 600V 9A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
auf Bestellung 5155 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.2 EUR
13+1.4 EUR
100+0.93 EUR
500+0.72 EUR
1000+0.66 EUR
Mindestbestellmenge: 8
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IPD60R600P7SAUMA1 IPD60R600P7SAUMA1 Infineon Technologies Infineon-IPD60R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d50d9fe4c403c Description: MOSFET N-CH 600V 6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400
auf Bestellung 5436 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.62 EUR
17+1.09 EUR
100+0.73 EUR
500+0.57 EUR
1000+0.51 EUR
Mindestbestellmenge: 11
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DF11MR12W1M1B11BOMA1 DF11MR12W1M1B11BOMA1 Infineon Technologies DF11MR12W1M1_B11.pdf Description: MOSFET 2N-CH 1200V AG-EASY1BM-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A
Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 800V
Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 15V
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 5V
Vgs(th) (Max) @ Id: 5.5V @ 20mA
Supplier Device Package: AG-EASY1BM-2
Produkt ist nicht verfügbar
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BSC110N15NS5ATMA1 BSC110N15NS5ATMA1 Infineon Technologies Infineon-BSC110N15NS5-DS-v02_01-EN.pdf?fileId=5546d46253f650570154a04caaad551a Description: MOSFET N-CH 150V 76A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 38A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 91µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 75 V
auf Bestellung 4674 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.01 EUR
10+3.19 EUR
100+2.48 EUR
500+2.26 EUR
Mindestbestellmenge: 5
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AUIPS7221RTRL AUIPS7221RTRL Infineon Technologies auips7221r.pdf?fileId=5546d462533600a4015355a80e761338 Description: IC PWR SWITCH N-CHANNEL 1:1 DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 30mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 60V
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-5
Fault Protection: Current Limiting (Fixed), Over Temperature
Part Status: Obsolete
Produkt ist nicht verfügbar
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ESD110B102ELE6327XTMA1 ESD110B102ELE6327XTMA1 Infineon Technologies Infineon-ESD110-B1-02series-DS-v01_03-EN.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=5546d4624933b875014975fe5a030e75 Description: TVS DIODE 18.5VWM 29VC PGTSLP220
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 85°C (TA)
Applications: RF Antenna
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 18.5V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29V
Power - Peak Pulse: 58W
Power Line Protection: No
auf Bestellung 47040 Stücke:
Lieferzeit 10-14 Tag (e)
33+0.55 EUR
54+0.33 EUR
100+0.24 EUR
500+0.16 EUR
1000+0.15 EUR
Mindestbestellmenge: 33
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AUIRS21811STR AUIRS21811STR Infineon Technologies auirs21811s.pdf?fileId=5546d462533600a4015355bf609715b4 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 60ns, 35ns (Max)
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.7 EUR
10+3.52 EUR
25+3.22 EUR
100+2.9 EUR
250+2.74 EUR
500+2.65 EUR
1000+2.57 EUR
Mindestbestellmenge: 4
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IPA60R280P7SXKSA1 Infineon-IPA60R280P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d3c00794f033f
IPA60R280P7SXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
auf Bestellung 742 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.5 EUR
50+0.84 EUR
100+0.83 EUR
500+0.8 EUR
Mindestbestellmenge: 8
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IPA60R280P7XKSA1 Infineon-IPA60R280P7-DS-v02_00-EN.pdf?fileId=5546d4625b10283a015b1f7bb1dd042e
IPA60R280P7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
Produkt ist nicht verfügbar
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IPA60R360P7SXKSA1 Infineon-IPA60R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d55dbb6160fc7
IPA60R360P7SXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 9A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
auf Bestellung 4691 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.43 EUR
50+0.97 EUR
100+0.92 EUR
500+0.81 EUR
1000+0.74 EUR
2000+0.68 EUR
Mindestbestellmenge: 8
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IPA60R600P7SXKSA1 Infineon-IPA60R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d3b403a7a02ca
IPA60R600P7SXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 6A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 21W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
auf Bestellung 449 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.16 EUR
50+1.07 EUR
100+1 EUR
Mindestbestellmenge: 9
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IPA60R600P7XKSA1 Infineon-IPA60R600P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015ce923cb40487f
IPA60R600P7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 6A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 21W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
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IPAN70R600P7SXKSA1 Infineon-IPAN70R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625acbae4c015ad1bc3b8a21b8
IPAN70R600P7SXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 8.5A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.8A, 10V
Power Dissipation (Max): 24.9W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPAN80R360P7XKSA1 Infineon-IPAN80R360P7-DS-v02_00-EN.pdf?fileId=5546d4625b62cd8a015bcdb8328d6d69
IPAN80R360P7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 13A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.6A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 280µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 500 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPAW60R280P7SXKSA1 Infineon-IPAW60R280P7S-DS-v02_00-EN.pdf?fileId=5546d4625acbae4c015accfa9ada0268
IPAW60R280P7SXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO220-FP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPAW60R600P7SXKSA1 Infineon-IPAW60R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625acbae4c015accfac772026c
IPAW60R600P7SXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 6A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 21W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO220-FP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IPB032N10N5ATMA1 Infineon-IPB032N10N5-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b5c47b25335ca
IPB032N10N5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 166A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 166A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 83A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 125µA
Supplier Device Package: PG-TO263-7
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 50 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+2.76 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
IPB048N15N5LFATMA1 Infineon-IPB048N15N5LF-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b573da84a026c
IPB048N15N5LFATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 100A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 255µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 75 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+6.86 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
IPB083N15N5LFATMA1 Infineon-IPB083N15N5LF-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b57cf380303f5
IPB083N15N5LFATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 105A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 100A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 134µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 75 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R180P7SAUMA1 Infineon-IPD60R180P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d55249fca0f9c
IPD60R180P7SAUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 18A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.95 EUR
5000+0.92 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R280P7ATMA1 Infineon-IPD60R280P7-DS-v02_00-EN.pdf?fileId=5546d4625c54d85b015c5daa1fa44d37
IPD60R280P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R280P7SAUMA1 Infineon-IPD60R280P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d54edbbd60f38
IPD60R280P7SAUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.72 EUR
5000+0.67 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R360P7SAUMA1 Infineon-IPD60R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d550931ef0f70
IPD60R360P7SAUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 9A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.58 EUR
5000+0.56 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R600P7SAUMA1 Infineon-IPD60R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d50d9fe4c403c
IPD60R600P7SAUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.44 EUR
5000+0.42 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IPN60R360P7SATMA1 Infineon-IPN60R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cf3d550b26150
IPN60R360P7SATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CHANNEL 600V 9A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.55 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
IPN60R600P7SATMA1 Infineon-IPN60R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cf439eb6361b8
IPN60R600P7SATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CHANNEL 600V 6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPN70R1K4P7SATMA1 Infineon-IPN70R1K4P7S-DS-v02_02-EN.pdf?fileId=5546d4625cc9456a015cf439fc7261ba
IPN70R1K4P7SATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CHANNEL 700V 4A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 700mA, 10V
Power Dissipation (Max): 6.2W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 158 pF @ 400 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.32 EUR
6000+0.29 EUR
9000+0.28 EUR
15000+0.27 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
IPN70R360P7SATMA1 Infineon-IPN70R360P7S-DS-v02_01-EN.pdf?fileId=5546d4625cc9456a015cf439d6ad61b3
IPN70R360P7SATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 12.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 3A, 10V
Power Dissipation (Max): 7.2W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 517 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPN70R600P7SATMA1 Infineon-IPN70R600P7S-DS-v02_02-EN.pdf?fileId=5546d4625cc9456a015cf442fdaa61bc
IPN70R600P7SATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 8.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.8A, 10V
Power Dissipation (Max): 6.9W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPN70R900P7SATMA1 Infineon-IPN70R900P7S-DS-v02_01-EN.pdf?fileId=5546d4625cc9456a015cf45549a461be
IPN70R900P7SATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.1A, 10V
Power Dissipation (Max): 6.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 211 pF @ 400 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.34 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
IPN80R900P7ATMA1 Infineon-IPN80R900P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cf4679a7e646f
IPN80R900P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CHANNEL 800V 6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.2A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 110µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 500 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.68 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R060P7XKSA1 Infineon-IPP60R060P7-DS-v02_00-EN.pdf?fileId=5546d4625acbae4c015accdf20660227
IPP60R060P7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 48A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R120P7XKSA1 Infineon-IPP60R120P7-DS-v02_00-EN.pdf?fileId=5546d4625acbae4c015acd0f0fdf074f
IPP60R120P7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 26A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 8.2A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 410µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 400 V
auf Bestellung 1465 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.24 EUR
50+2.7 EUR
100+2.57 EUR
500+2.16 EUR
1000+1.98 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R280P7XKSA1 Infineon-IPP60R280P7-DS-v02_00-EN.pdf?fileId=5546d4625b10283a015b1f973023047b
IPP60R280P7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
auf Bestellung 268 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.66 EUR
50+1.87 EUR
100+1.75 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R060P7XKSA1 Infineon-IPW60R060P7-DS-v02_00-EN.pdf?fileId=5546d4625acbae4c015acce82ba2022c
IPW60R060P7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 48A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V
auf Bestellung 716 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.66 EUR
30+5.15 EUR
120+4.47 EUR
510+4.09 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IRPS5401MTRPBF Infineon-IRPS5401M-DS-v02_01-EN.pdf?fileId=5546d4625cc9456a015cd69d402139db
IRPS5401MTRPBF
Hersteller: Infineon Technologies
Description: POL - SUPIRBUCK
Packaging: Tape & Reel (TR)
Package / Case: 56-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 6V ~ 14V
Applications: Power Management - Communications, Storage, Embedded Computing & High Density Multi-Rail Systems
Current - Supply: 40mA
Supplier Device Package: 56-QFN (7x7)
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2007SPBF Infineon-IRS2007(S,M)-DataSheet-v01_00-EN.pdf?fileId=5546d46269e1c019016ae53e02c239bf&redirId=115114
IRS2007SPBF
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRVR 600MA 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 10V ~ 20V
Applications: Battery Powered
Current - Output / Channel: 600mA
Technology: Power MOSFET
Voltage - Load: 200V
Supplier Device Package: 8-SOIC
Part Status: Last Time Buy
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2007STRPBF Infineon-IRS2007(S,M)-DataSheet-v01_00-EN.pdf?fileId=5546d46269e1c019016ae53e02c239bf&redirId=115114
IRS2007STRPBF
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRVR 600MA 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 10V ~ 20V
Applications: Battery Powered
Current - Output / Channel: 600mA
Technology: Power MOSFET
Voltage - Load: 200V
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.64 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
SLF9630VQFN8XUMA2
SLF9630VQFN8XUMA2
Hersteller: Infineon Technologies
Description: TRANSPORT TICKETING
Packaging: Tape & Reel (TR)
Package / Case: 8-VQFN Exposed Pad
Mounting Type: Surface Mount
Interface: ISO7816
Operating Temperature: -25°C ~ 85°C
Applications: Security
Core Processor: 16-Bit
Supplier Device Package: 8-VFQFPN (6x5)
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SLJ52ACA150A1VQFN32XUMA2
Hersteller: Infineon Technologies
Description: AUTHENTICATION
Packaging: Tape & Reel (TR)
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE4278GXUMA2
TLE4278GXUMA2
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 200MA PG-DSO-14-30
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14-30
Voltage - Output (Min/Fixed): 5V
Control Features: Reset, Watchdog
Grade: Automotive
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 12 mA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLF35584QKVS2XUMA2 Infineon-TLF35584QV-ProductOverview-DataSheet-v01_00-EN.pdf?fileId=5546d46279cccfdb0179ce150fc81cbf
TLF35584QKVS2XUMA2
Hersteller: Infineon Technologies
Description: IC REG AUTO APPL 1OUT LQFP64-18
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Voltage - Output: 3.3V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3V ~ 40V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Power Supply, Automotive Applications
Supplier Device Package: PG-LQFP-64-18
Part Status: Active
auf Bestellung 1900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1900+6.26 EUR
Mindestbestellmenge: 1900
Im Einkaufswagen  Stück im Wert von  UAH
TLF35584QVVS2XUMA2 Infineon-TLF35584QV-ProductOverview-DataSheet-v01_00-EN.pdf?fileId=5546d46279cccfdb0179ce150fc81cbf
TLF35584QVVS2XUMA2
Hersteller: Infineon Technologies
Description: IC REG AUTO APPL 1OUT VQFN-48-31
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 3.3V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3V ~ 40V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Power Supply, Automotive Applications
Supplier Device Package: PG-VQFN-48-31
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLS202B1MBV50HTSA1 Infineon-TLS202B1MB%20V50-DS-v01_00-EN.pdf?fileId=5546d4625e37f35a015e4c2775090ca8
TLS202B1MBV50HTSA1
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 150MA PG-SCT595-5
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 58dB (10kHz)
Voltage Dropout (Max): 0.57V @ 150mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 200 µA
Qualification: AEC-Q100
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.71 EUR
Mindestbestellmenge: 3000
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XMC4300F100K256AAXUMA1 Infineon-XMC4300-DS-v01_00-EN.pdf?fileId=5546d462525dbac40152abc34fde16d8
XMC4300F100K256AAXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 14x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, Ethernet, I2C, LINbus, MMC/SD, SPI, UART/USART, USB OTG, USIC
Peripherals: DMA, I2S, LED, POR, Touch-Sense, WDT
Supplier Device Package: PG-LQFP-100-25
Part Status: Active
Number of I/O: 75
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRB24427S AUIRB24427S_9-29-14.pdf
AUIRB24427S
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPS52GB
Hersteller: Infineon Technologies
Description: IC MOSFET POWER SWITCH TO220
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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MB3773PF-GT-BNDK5E1 MB3773_6-28-17.pdf
Hersteller: Infineon Technologies
Description: IC SUPERVISOR PWR SUP MONITOR
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MB3773PF-GT-BND-K5ERE1 MB3773_6-28-17.pdf
Hersteller: Infineon Technologies
Description: IC POWER SUPPLY MONITOR
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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FF600R12IS4F
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 600A 3700W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3700 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 39 nF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPN60R360P7SATMA1 Infineon-IPN60R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cf3d550b26150
IPN60R360P7SATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CHANNEL 600V 9A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
auf Bestellung 5427 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.83 EUR
14+1.26 EUR
100+0.91 EUR
500+0.71 EUR
1000+0.64 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IPN60R600P7SATMA1 Infineon-IPN60R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cf439eb6361b8
IPN60R600P7SATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CHANNEL 600V 6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
auf Bestellung 2706 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.71 EUR
16+1.16 EUR
100+0.78 EUR
500+0.63 EUR
1000+0.57 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IPN70R360P7SATMA1 Infineon-IPN70R360P7S-DS-v02_01-EN.pdf?fileId=5546d4625cc9456a015cf439d6ad61b3
IPN70R360P7SATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 12.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 3A, 10V
Power Dissipation (Max): 7.2W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 517 pF @ 400 V
auf Bestellung 141 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.67 EUR
16+1.13 EUR
100+0.82 EUR
Mindestbestellmenge: 11
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IPN70R600P7SATMA1 Infineon-IPN70R600P7S-DS-v02_02-EN.pdf?fileId=5546d4625cc9456a015cf442fdaa61bc
IPN70R600P7SATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 8.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.8A, 10V
Power Dissipation (Max): 6.9W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 400 V
auf Bestellung 640 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.67 EUR
17+1.06 EUR
100+0.74 EUR
500+0.56 EUR
Mindestbestellmenge: 11
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IPN70R900P7SATMA1 Infineon-IPN70R900P7S-DS-v02_01-EN.pdf?fileId=5546d4625cc9456a015cf45549a461be
IPN70R900P7SATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.1A, 10V
Power Dissipation (Max): 6.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 211 pF @ 400 V
auf Bestellung 4869 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.21 EUR
21+0.87 EUR
100+0.6 EUR
500+0.48 EUR
1000+0.43 EUR
Mindestbestellmenge: 15
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IPN70R1K4P7SATMA1 Infineon-IPN70R1K4P7S-DS-v02_02-EN.pdf?fileId=5546d4625cc9456a015cf439fc7261ba
IPN70R1K4P7SATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CHANNEL 700V 4A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 700mA, 10V
Power Dissipation (Max): 6.2W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 158 pF @ 400 V
auf Bestellung 24003 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.23 EUR
22+0.82 EUR
100+0.55 EUR
500+0.41 EUR
1000+0.37 EUR
Mindestbestellmenge: 15
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IPN80R900P7ATMA1 Infineon-IPN80R900P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cf4679a7e646f
IPN80R900P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CHANNEL 800V 6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.2A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 110µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 500 V
auf Bestellung 5073 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.5 EUR
11+1.61 EUR
100+1.08 EUR
500+0.84 EUR
1000+0.77 EUR
Mindestbestellmenge: 8
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IPD60R280P7ATMA1 Infineon-IPD60R280P7-DS-v02_00-EN.pdf?fileId=5546d4625c54d85b015c5daa1fa44d37
IPD60R280P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
Produkt ist nicht verfügbar
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IPD60R180P7SAUMA1 Infineon-IPD60R180P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d55249fca0f9c
IPD60R180P7SAUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 18A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
auf Bestellung 13104 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.92 EUR
10+2.05 EUR
100+1.43 EUR
500+1.14 EUR
1000+1.07 EUR
Mindestbestellmenge: 7
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IPD60R280P7SAUMA1 Infineon-IPD60R280P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d54edbbd60f38
IPD60R280P7SAUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
auf Bestellung 6888 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.71 EUR
11+1.72 EUR
100+1.15 EUR
500+0.91 EUR
1000+0.83 EUR
Mindestbestellmenge: 7
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IPD60R360P7SAUMA1 Infineon-IPD60R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d550931ef0f70
IPD60R360P7SAUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 9A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
auf Bestellung 5155 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.2 EUR
13+1.4 EUR
100+0.93 EUR
500+0.72 EUR
1000+0.66 EUR
Mindestbestellmenge: 8
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IPD60R600P7SAUMA1 Infineon-IPD60R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d50d9fe4c403c
IPD60R600P7SAUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400
auf Bestellung 5436 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.62 EUR
17+1.09 EUR
100+0.73 EUR
500+0.57 EUR
1000+0.51 EUR
Mindestbestellmenge: 11
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DF11MR12W1M1B11BOMA1 DF11MR12W1M1_B11.pdf
DF11MR12W1M1B11BOMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 1200V AG-EASY1BM-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A
Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 800V
Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 15V
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 5V
Vgs(th) (Max) @ Id: 5.5V @ 20mA
Supplier Device Package: AG-EASY1BM-2
Produkt ist nicht verfügbar
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BSC110N15NS5ATMA1 Infineon-BSC110N15NS5-DS-v02_01-EN.pdf?fileId=5546d46253f650570154a04caaad551a
BSC110N15NS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 76A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 38A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 91µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 75 V
auf Bestellung 4674 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.01 EUR
10+3.19 EUR
100+2.48 EUR
500+2.26 EUR
Mindestbestellmenge: 5
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AUIPS7221RTRL auips7221r.pdf?fileId=5546d462533600a4015355a80e761338
AUIPS7221RTRL
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHANNEL 1:1 DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 30mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 60V
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-5
Fault Protection: Current Limiting (Fixed), Over Temperature
Part Status: Obsolete
Produkt ist nicht verfügbar
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ESD110B102ELE6327XTMA1 Infineon-ESD110-B1-02series-DS-v01_03-EN.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=5546d4624933b875014975fe5a030e75
ESD110B102ELE6327XTMA1
Hersteller: Infineon Technologies
Description: TVS DIODE 18.5VWM 29VC PGTSLP220
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 85°C (TA)
Applications: RF Antenna
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 18.5V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29V
Power - Peak Pulse: 58W
Power Line Protection: No
auf Bestellung 47040 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
33+0.55 EUR
54+0.33 EUR
100+0.24 EUR
500+0.16 EUR
1000+0.15 EUR
Mindestbestellmenge: 33
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AUIRS21811STR auirs21811s.pdf?fileId=5546d462533600a4015355bf609715b4
AUIRS21811STR
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 60ns, 35ns (Max)
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.7 EUR
10+3.52 EUR
25+3.22 EUR
100+2.9 EUR
250+2.74 EUR
500+2.65 EUR
1000+2.57 EUR
Mindestbestellmenge: 4
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