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BSP125H6433XTMA1 BSP125H6433XTMA1 Infineon Technologies Infineon-BSP125-DS-v02_02-en.pdf?fileId=db3a30433b47825b013b50cae9702806 Description: MOSFET N-CH 600V 120MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Qualification: AEC-Q101
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14+1.54 EUR
50+1.14 EUR
100+1.01 EUR
500+0.79 EUR
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BSP716NH6327XTSA1 BSP716NH6327XTSA1 Infineon Technologies Infineon-BSP716N-DS-v02_00-en.pdf?fileId=db3a304341c1e4a10141da580f3529e9 Description: MOSFET N-CH 75V 2.3A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 2.3A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 218µA
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V
Produkt ist nicht verfügbar
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TLE9871QXA20XUMA2 TLE9871QXA20XUMA2 Infineon Technologies Infineon-TLE9871QXA20-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a89e33fad3f30 Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SSI, UART
RAM Size: 3K x 8
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 28V
Program Memory Type: FLASH (36kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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250+6.19 EUR
500+6 EUR
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TLE9877QXA20XUMA2 TLE9877QXA20XUMA2 Infineon Technologies Infineon-TLE9877QXA20-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a89d127563f28 Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 28V
Program Memory Type: FLASH (64kB)
Applications: Automotive
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-31
Part Status: Not For New Designs
Number of I/O: 10
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TLE9877QXA40XUMA2 TLE9877QXA40XUMA2 Infineon Technologies Infineon-TLE987x-ProductBrief-PB-v01_00-EN.pdf?fileId=5546d46249a28d750149aee472032794 Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 28V
Program Memory Type: FLASH (64kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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TLE9877QXW40XUMA1 TLE9877QXW40XUMA1 Infineon Technologies Infineon-TLE987x-ProductBrief-PB-v01_00-EN.pdf?fileId=5546d46249a28d750149aee472032794 Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 175°C
Voltage - Supply: 5.5V ~ 28V
Program Memory Type: FLASH (64kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Grade: Automotive
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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TLE9879QXA20XUMA2 TLE9879QXA20XUMA2 Infineon Technologies Infineon-TLE9879QXA20-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a8473ba2274de Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 28V
Program Memory Type: FLASH (128kB)
Applications: Automotive
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-31
Number of I/O: 10
DigiKey Programmable: Not Verified
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TLE9879QXW40XUMA1 TLE9879QXW40XUMA1 Infineon Technologies Infineon-TLE987x-ProductBrief-PB-v01_00-EN.pdf?fileId=5546d46249a28d750149aee472032794 Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 175°C
Voltage - Supply: 5.5V ~ 28V
Program Memory Type: FLASH (128kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Grade: Automotive
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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10+10.28 EUR
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TLE9867QXA40XUMA2 TLE9867QXA40XUMA2 Infineon Technologies Infineon-TLE9867QXA40-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a8a3f72423f48 Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 28V
Program Memory Type: FLASH (64kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: VQFN-48-31
Grade: Automotive
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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100+6.85 EUR
500+6.32 EUR
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TLE9867QXW20XUMA1 TLE9867QXW20XUMA1 Infineon Technologies Infineon-TLE9867QXW20-DS-v01_00-EN.pdf?fileId=5546d4625b10283a015b2486a2e22e42 Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 175°C
Voltage - Supply: 5.5V ~ 28V
Program Memory Type: FLASH (128kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Grade: Automotive
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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100+7.59 EUR
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TLE9869QXA20XUMA2 TLE9869QXA20XUMA2 Infineon Technologies Infineon-TLE9869QXA20-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a8a3614cd3f3c Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 28V
Program Memory Type: FLASH (128kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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TLE98432QXXUMA1 TLE98432QXXUMA1 Infineon Technologies Infineon-TLE9843-2QX-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a893e5eaf029b Description: EMBEDDED POWER
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Program Memory Type: FLASH (52kB)
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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50+5.66 EUR
100+5.41 EUR
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TLE98422QXXUMA1 TLE98422QXXUMA1 Infineon Technologies infineon-tle9842-2qx-datasheet-en.pdf Description: EMBEDDED POWER
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Program Memory Type: FLASH (40kB)
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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100+6 EUR
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TLE98442QXXUMA1 TLE98442QXXUMA1 Infineon Technologies Infineon-TLE9844-2QX-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a84a1d6e97509 Description: IC MOTOR DRIVER 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Program Memory Type: FLASH (64kB)
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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3+8.95 EUR
10+6.79 EUR
50+5.93 EUR
100+5.66 EUR
500+5.21 EUR
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IRS20965STRPBF IRS20965STRPBF Infineon Technologies irs20965spbf.pdf?fileId=5546d462533600a4015356761d8b279b Description: IC AMP CLASS D MONO 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 15V
Supplier Device Package: 16-SOIC
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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IRFHS9351TRPBF IRFHS9351TRPBF Infineon Technologies irfhs9351pbf.pdf?fileId=5546d462533600a401535623a8d41f63 Description: MOSFET 2P-CH 30V 2.3A PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 10µA
Supplier Device Package: 6-PQFN Dual (2x2)
Part Status: Active
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BTS3142DNT BTS3142DNT Infineon Technologies Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
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BTS118DNT BTS118DNT Infineon Technologies Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
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BTS142DNT BTS142DNT Infineon Technologies Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Features: Auto Restart
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 23mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.6A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
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BTS3118DNT Infineon Technologies Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
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BTS3134NXT BTS3134NXT Infineon Technologies Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 35mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
Produkt ist nicht verfügbar
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KIT6W12VBIASICE3TOBO1 KIT6W12VBIASICE3TOBO1 Infineon Technologies Infineon-General_description_KIT_6W_12V_BIAS_ICE3-ATI-v01_01-EN.pdf?fileId=5546d4625debb399015e28e45b1b3dde Description: EVAL BOARD FOR ICE3RBR4765JZ
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IPLU300N04S4R7XTMA2 IPLU300N04S4R7XTMA2 Infineon Technologies IPLU300N04S4-R7-Datasheet.pdf Description: MOSFET N-CH 40V 300A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.76mOhm @ 100A, 10V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: PG-HSOF-8-1
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 287 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22945 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Qualification: AEC-Q101
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BSZ0589NSATMA1 BSZ0589NSATMA1 Infineon Technologies Infineon-BSZ0589NS-DS-v02_00-EN.pdf?fileId=5546d46258fc0bc101598da704fa60e0 Description: MOSFET N-CH 30V 17A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 8A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V
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520966231136 Infineon Technologies Description: IC FLASH NOR
Packaging: Tray
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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811600-73670880 Infineon Technologies Description: IC FLASH NOR
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLV493DA1B6MS2GOTOBO1 TLV493DA1B6MS2GOTOBO1 Infineon Technologies Infineon-3D%20Magnetic%20Sensor-PB-v03_00-EN.pdf?fileId=5546d46261d5e6820161e7571b2b3dd0 Description: EVAL BOARD FOR TLV493D
Packaging: Box
Interface: USB
Contents: Board(s)
Voltage - Supply: 5V, USB
Sensor Type: Magnetic, Linear, Rotary Position
Utilized IC / Part: TLV493D-A1B6
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: ±130mT
Part Status: Active
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IPDD60R190G7XTMA1 IPDD60R190G7XTMA1 Infineon Technologies Infineon-IPDD60R190G7-DS-v02_00-EN.pdf?fileId=5546d4626102d35a01617087dc0f79ea Description: MOSFET N-CH 600V 13A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 4.2A, 10V
Power Dissipation (Max): 76W (Tc)
Vgs(th) (Max) @ Id: 4V @ 210µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 400 V
Produkt ist nicht verfügbar
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IPDD60R125G7XTMA1 IPDD60R125G7XTMA1 Infineon Technologies Infineon-IPDD60R125G7-DS-v02_00-EN.pdf?fileId=5546d4626102d35a0161706cba27778f Description: MOSFET N-CH 600V 20A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6.4A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
Produkt ist nicht verfügbar
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IPDD60R080G7XTMA1 IPDD60R080G7XTMA1 Infineon Technologies Infineon-IPDD60R080G7-DS-v02_00-EN.pdf?fileId=5546d4626102d35a016170882f757a07 Description: MOSFET N-CH 600V 29A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 9.7A, 10V
Power Dissipation (Max): 174W (Tc)
Vgs(th) (Max) @ Id: 4V @ 490µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 400 V
auf Bestellung 1700 Stücke:
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1700+5.72 EUR
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IPDD60R050G7XTMA1 IPDD60R050G7XTMA1 Infineon Technologies Infineon-IPDD60R050G7-DS-v02_00-EN.pdf?fileId=5546d4626102d35a0161707eb2f97810 Description: MOSFET N-CH 600V 47A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 15.9A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 400 V
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1700+8.69 EUR
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IPDD60R190G7XTMA1 IPDD60R190G7XTMA1 Infineon Technologies Infineon-IPDD60R190G7-DS-v02_00-EN.pdf?fileId=5546d4626102d35a01617087dc0f79ea Description: MOSFET N-CH 600V 13A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 4.2A, 10V
Power Dissipation (Max): 76W (Tc)
Vgs(th) (Max) @ Id: 4V @ 210µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 400 V
auf Bestellung 268 Stücke:
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3+7.31 EUR
10+4.77 EUR
50+3.68 EUR
100+3.33 EUR
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IPDD60R125G7XTMA1 IPDD60R125G7XTMA1 Infineon Technologies Infineon-IPDD60R125G7-DS-v02_00-EN.pdf?fileId=5546d4626102d35a0161706cba27778f Description: MOSFET N-CH 600V 20A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6.4A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
Produkt ist nicht verfügbar
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IPDD60R050G7XTMA1 IPDD60R050G7XTMA1 Infineon Technologies Infineon-IPDD60R050G7-DS-v02_00-EN.pdf?fileId=5546d4626102d35a0161707eb2f97810 Description: MOSFET N-CH 600V 47A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 15.9A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 400 V
auf Bestellung 1710 Stücke:
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2+20.06 EUR
10+13.82 EUR
100+10.63 EUR
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IPN70R1K2P7SATMA1 IPN70R1K2P7SATMA1 Infineon Technologies Infineon-IPN70R1K2P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f524b972d6b74 Description: MOSFET N-CH 700V 4.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 900mA, 10V
Power Dissipation (Max): 6.3W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 174 pF @ 400 V
auf Bestellung 1468 Stücke:
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19+1.15 EUR
22+1 EUR
100+0.69 EUR
500+0.57 EUR
1000+0.49 EUR
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IPN70R2K0P7SATMA1 IPN70R2K0P7SATMA1 Infineon Technologies Infineon-IPN70R2K0P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f526712fe6b76 Description: MOSFET N-CH 700V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 400 V
auf Bestellung 14553 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.43 EUR
24+0.88 EUR
100+0.57 EUR
500+0.44 EUR
1000+0.39 EUR
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IPN70R450P7SATMA1 IPN70R450P7SATMA1 Infineon Technologies Infineon-IPN70R450P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f526728366b78 Description: MOSFET N-CH 700V 10A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2.3A, 10V
Power Dissipation (Max): 7.1W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 120µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 400 V
auf Bestellung 1290 Stücke:
Lieferzeit 10-14 Tag (e)
10+2.15 EUR
16+1.36 EUR
100+0.89 EUR
500+0.69 EUR
1000+0.63 EUR
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IPN80R1K2P7ATMA1 IPN80R1K2P7ATMA1 Infineon Technologies infineon-ipn80r1k2p7-ds-en.pdf Description: MOSFET N-CH 800V 4.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 6.8W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
auf Bestellung 2912 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.92 EUR
12+1.83 EUR
100+1.23 EUR
500+0.95 EUR
1000+0.87 EUR
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IPN80R3K3P7ATMA1 IPN80R3K3P7ATMA1 Infineon Technologies infineon-ipn80r3k3p7-ds-en.pdf Description: MOSFET N-CH 800V 1.9A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 590mA, 10V
Power Dissipation (Max): 6.1W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 500 V
auf Bestellung 45 Stücke:
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11+2.05 EUR
17+1.29 EUR
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1EDN7511BXUSA1 1EDN7511BXUSA1 Infineon Technologies Infineon-1EDN751x_1EDN851x_Rev%202.0-DS-v02_01-EN.pdf?fileId=5546d462576f34750157e176df0b3ca7 Description: IC GATE DRVR LOW-SIDE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: PG-SOT23-6-2
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 9000 Stücke:
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3000+0.57 EUR
6000+0.56 EUR
9000+0.55 EUR
Mindestbestellmenge: 3000 Stücke
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1EDN8511BXUSA1 1EDN8511BXUSA1 Infineon Technologies Infineon-1EDN751x_1EDN851x_Rev+2.0-DS-v02_00-EN.pdf?fileId=5546d462576f34750157e176df0b3ca7 Description: IC GATE DRVR LOW-SIDE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 8V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: PG-SOT23-6-2
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: GaN FET, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 4A, 8A
DigiKey Programmable: Not Verified
auf Bestellung 21000 Stücke:
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3000+0.58 EUR
6000+0.56 EUR
15000+0.55 EUR
Mindestbestellmenge: 3000 Stücke
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2EDS8165HXUMA1 2EDS8165HXUMA1 Infineon Technologies Infineon-2EDF7175F-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163b09026be3060 Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 1A, 2A
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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BSC019N06NSATMA1 BSC019N06NSATMA1 Infineon Technologies Infineon-BSC019N06NS-DS-v02_01-EN.pdf?fileId=5546d462602a9dc80160546789c12ca7 Description: MOSFET N-CH 60V 100A TDSON-8 FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Ta)
Vgs(th) (Max) @ Id: 3.3V @ 74µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 30 V
auf Bestellung 15000 Stücke:
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5000+1.2 EUR
15000+1.13 EUR
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DD171N16KKHOSA1 Infineon Technologies Description: THYR / DIODE MODULE DK
Produkt ist nicht verfügbar
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DZ435N40KS01HPSA1 DZ435N40KS01HPSA1 Infineon Technologies Infineon-DZ435N-DS-v03_02-EN.pdf?fileId=db3a3043243b5f170124e2ccd4426304 Description: DIODE GEN PURP 4KV 700A PB501-1
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DZ950N44KS01HPSA1 DZ950N44KS01HPSA1 Infineon Technologies Infineon-DZ950N-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b43061c7502e Description: THYR / DIODE MODULE DK
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FF1800R12IE5PBPSA1 FF1800R12IE5PBPSA1 Infineon Technologies Infineon-FF1800R12IE5-DS-v03_00-EN.pdf?fileId=5546d4625cc9456a015d07eef79f7f18 Description: IGBT MODULE 1200V 1800A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1800A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 98.5 nF @ 25 V
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FF225R12ME4PBPSA1 FF225R12ME4PBPSA1 Infineon Technologies Infineon-FF225R12ME4P-DS-v03_00-EN.pdf?fileId=5546d4625b3ca4ec015b3e4257d506a6 Description: IGBT MODULE 1200V 450A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
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FP50R12N2T4B16BOSA1 Infineon Technologies Description: IGBT MODULE LOW POWER ECONO
Packaging: Tray
Part Status: Discontinued at Digi-Key
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FP75R12N2T4B11BPSA1 Infineon Technologies Description: IGBT MODULE LOW POWER ECONO
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FP75R12N2T4B16BOSA1 Infineon Technologies 448_FP75R12N2T4PBPSA1.pdf Description: IGBT MODULE LOW POWER ECONO
Packaging: Tray
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FP75R12N2T4BOSA1 FP75R12N2T4BOSA1 Infineon Technologies Description: IGBT MODULE LOW POWER ECONO
Packaging: Tray
auf Bestellung 9 Stücke:
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1+259.77 EUR
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GATELEAD1110008XPSA1 Infineon Technologies Description: HIGH POWER THYR / DIO
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GATELEADMPWHPK1258XXPSA1 Infineon Technologies Description: STD THYR/DIODEN DISC
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GLHUELSE1626XPSA1 Infineon Technologies Description: DUMMY 57
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GLHUELSE1627XPSA1 Infineon Technologies Description: DUMMY 57
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ICL5102XUMA1 ICL5102XUMA1 Infineon Technologies ICL5102.pdf Description: IC LED DRIVER OFFL NO 16DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.3MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: LED Lighting
Internal Switch(s): No
Topology: Half-Bridge
Supplier Device Package: PG-DSO-16-23
Dimming: No
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Part Status: Obsolete
Produkt ist nicht verfügbar
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IKA15N65ET6XKSA2 IKA15N65ET6XKSA2 Infineon Technologies Infineon-IKA15N65ET6-DS-v02_02-EN.pdf?fileId=5546d4625e763904015e844d635e5280 Description: IGBT TRENCH FS 650V 17A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 69 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 11.5A
Supplier Device Package: PG-TO220-3-FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/117ns
Switching Energy: 230µJ (on), 110µJ (off)
Test Condition: 400V, 11.5A, 47Ohm, 15V
Gate Charge: 37 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 57.5 A
Power - Max: 45 W
Produkt ist nicht verfügbar
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IMC101TF064XUMA1 IMC101TF064XUMA1 Infineon Technologies Infineon-IMC100-DS-v01_02-EN.pdf?fileId=5546d46265487f7b016584a0147e7660 Description: IC MOTOR DRIVER 3V-5.5V 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Controller
Current - Output: 50mA
Interface: Analog, PWM
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 5.5V
Applications: Home Appliance
Supplier Device Package: PG-LQFP-64-26
Motor Type - AC, DC: AC, Synchronous
Part Status: Active
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IMC102TF064XUMA1 IMC102TF064XUMA1 Infineon Technologies infineon-imc100-datasheet-cn.pdf Description: IC MOTOR DRIVER 3V-5.5V 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Controller
Current - Output: 50mA
Interface: Analog, PWM
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 5.5V
Applications: Home Appliance
Supplier Device Package: PG-LQFP-64-26
Motor Type - AC, DC: AC, Synchronous
Part Status: Active
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BSP125H6433XTMA1 Infineon-BSP125-DS-v02_02-en.pdf?fileId=db3a30433b47825b013b50cae9702806
BSP125H6433XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 120MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.45 EUR
14+1.54 EUR
50+1.14 EUR
100+1.01 EUR
500+0.79 EUR
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BSP716NH6327XTSA1 Infineon-BSP716N-DS-v02_00-en.pdf?fileId=db3a304341c1e4a10141da580f3529e9
BSP716NH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 2.3A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 2.3A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 218µA
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V
Produkt ist nicht verfügbar
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TLE9871QXA20XUMA2 Infineon-TLE9871QXA20-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a89e33fad3f30
TLE9871QXA20XUMA2
Hersteller: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SSI, UART
RAM Size: 3K x 8
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 28V
Program Memory Type: FLASH (36kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 2490 Stücke:
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3+10.14 EUR
10+7.75 EUR
25+7.15 EUR
100+6.5 EUR
250+6.19 EUR
500+6 EUR
1000+5.84 EUR
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TLE9877QXA20XUMA2 Infineon-TLE9877QXA20-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a89d127563f28
TLE9877QXA20XUMA2
Hersteller: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 28V
Program Memory Type: FLASH (64kB)
Applications: Automotive
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-31
Part Status: Not For New Designs
Number of I/O: 10
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3+7.16 EUR
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TLE9877QXA40XUMA2 Infineon-TLE987x-ProductBrief-PB-v01_00-EN.pdf?fileId=5546d46249a28d750149aee472032794
TLE9877QXA40XUMA2
Hersteller: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 28V
Program Memory Type: FLASH (64kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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2+11.38 EUR
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TLE9877QXW40XUMA1 Infineon-TLE987x-ProductBrief-PB-v01_00-EN.pdf?fileId=5546d46249a28d750149aee472032794
TLE9877QXW40XUMA1
Hersteller: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 175°C
Voltage - Supply: 5.5V ~ 28V
Program Memory Type: FLASH (64kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Grade: Automotive
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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2+11.96 EUR
10+9.17 EUR
50+8.06 EUR
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500+7.13 EUR
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TLE9879QXA20XUMA2 Infineon-TLE9879QXA20-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a8473ba2274de
TLE9879QXA20XUMA2
Hersteller: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 28V
Program Memory Type: FLASH (128kB)
Applications: Automotive
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-31
Number of I/O: 10
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLE9879QXW40XUMA1 Infineon-TLE987x-ProductBrief-PB-v01_00-EN.pdf?fileId=5546d46249a28d750149aee472032794
TLE9879QXW40XUMA1
Hersteller: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 175°C
Voltage - Supply: 5.5V ~ 28V
Program Memory Type: FLASH (128kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Grade: Automotive
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 364 Stücke:
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2+13.39 EUR
10+10.28 EUR
50+9.04 EUR
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TLE9867QXA40XUMA2 Infineon-TLE9867QXA40-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a8a3f72423f48
TLE9867QXA40XUMA2
Hersteller: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 28V
Program Memory Type: FLASH (64kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: VQFN-48-31
Grade: Automotive
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 2056 Stücke:
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2+10.69 EUR
10+8.18 EUR
50+7.16 EUR
100+6.85 EUR
500+6.32 EUR
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TLE9867QXW20XUMA1 Infineon-TLE9867QXW20-DS-v01_00-EN.pdf?fileId=5546d4625b10283a015b2486a2e22e42
TLE9867QXW20XUMA1
Hersteller: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 175°C
Voltage - Supply: 5.5V ~ 28V
Program Memory Type: FLASH (128kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-29
Grade: Automotive
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 2498 Stücke:
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AnzahlPrivatkunde
2+11.82 EUR
10+9.04 EUR
50+7.94 EUR
100+7.59 EUR
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TLE9869QXA20XUMA2 Infineon-TLE9869QXA20-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a8a3614cd3f3c
TLE9869QXA20XUMA2
Hersteller: Infineon Technologies
Description: IC SOC MOTOR DRIVER 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5.5V ~ 28V
Program Memory Type: FLASH (128kB)
Core Processor: ARM® Cortex®-M3
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 3321 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.88 EUR
10+9.08 EUR
50+7.97 EUR
100+7.63 EUR
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TLE98432QXXUMA1 Infineon-TLE9843-2QX-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a893e5eaf029b
TLE98432QXXUMA1
Hersteller: Infineon Technologies
Description: EMBEDDED POWER
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Program Memory Type: FLASH (52kB)
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
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AnzahlPrivatkunde
3+8.57 EUR
10+6.5 EUR
50+5.66 EUR
100+5.41 EUR
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TLE98422QXXUMA1 infineon-tle9842-2qx-datasheet-en.pdf
TLE98422QXXUMA1
Hersteller: Infineon Technologies
Description: EMBEDDED POWER
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Program Memory Type: FLASH (40kB)
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 3811 Stücke:
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3+9.47 EUR
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50+6.28 EUR
100+6 EUR
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TLE98442QXXUMA1 Infineon-TLE9844-2QX-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a84a1d6e97509
TLE98442QXXUMA1
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Program Memory Type: FLASH (64kB)
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.95 EUR
10+6.79 EUR
50+5.93 EUR
100+5.66 EUR
500+5.21 EUR
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IRS20965STRPBF irs20965spbf.pdf?fileId=5546d462533600a4015356761d8b279b
IRS20965STRPBF
Hersteller: Infineon Technologies
Description: IC AMP CLASS D MONO 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 15V
Supplier Device Package: 16-SOIC
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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IRFHS9351TRPBF irfhs9351pbf.pdf?fileId=5546d462533600a401535623a8d41f63
IRFHS9351TRPBF
Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 30V 2.3A PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 10µA
Supplier Device Package: 6-PQFN Dual (2x2)
Part Status: Active
auf Bestellung 2330 Stücke:
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12+1.87 EUR
18+1.17 EUR
100+0.76 EUR
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2000+0.46 EUR
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BTS3142DNT
BTS3142DNT
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Produkt ist nicht verfügbar
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BTS118DNT
BTS118DNT
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Produkt ist nicht verfügbar
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BTS142DNT
BTS142DNT
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Features: Auto Restart
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 23mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.6A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
Produkt ist nicht verfügbar
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BTS3118DNT
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Produkt ist nicht verfügbar
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BTS3134NXT
BTS3134NXT
Hersteller: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 35mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
Produkt ist nicht verfügbar
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KIT6W12VBIASICE3TOBO1 Infineon-General_description_KIT_6W_12V_BIAS_ICE3-ATI-v01_01-EN.pdf?fileId=5546d4625debb399015e28e45b1b3dde
KIT6W12VBIASICE3TOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR ICE3RBR4765JZ
Produkt ist nicht verfügbar
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IPLU300N04S4R7XTMA2 IPLU300N04S4-R7-Datasheet.pdf
IPLU300N04S4R7XTMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 300A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.76mOhm @ 100A, 10V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: PG-HSOF-8-1
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 287 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22945 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSZ0589NSATMA1 Infineon-BSZ0589NS-DS-v02_00-EN.pdf?fileId=5546d46258fc0bc101598da704fa60e0
BSZ0589NSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 17A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 8A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
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520966231136
Hersteller: Infineon Technologies
Description: IC FLASH NOR
Packaging: Tray
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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811600-73670880
Hersteller: Infineon Technologies
Description: IC FLASH NOR
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLV493DA1B6MS2GOTOBO1 Infineon-3D%20Magnetic%20Sensor-PB-v03_00-EN.pdf?fileId=5546d46261d5e6820161e7571b2b3dd0
TLV493DA1B6MS2GOTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLV493D
Packaging: Box
Interface: USB
Contents: Board(s)
Voltage - Supply: 5V, USB
Sensor Type: Magnetic, Linear, Rotary Position
Utilized IC / Part: TLV493D-A1B6
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: ±130mT
Part Status: Active
Produkt ist nicht verfügbar
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IPDD60R190G7XTMA1 Infineon-IPDD60R190G7-DS-v02_00-EN.pdf?fileId=5546d4626102d35a01617087dc0f79ea
IPDD60R190G7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 13A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 4.2A, 10V
Power Dissipation (Max): 76W (Tc)
Vgs(th) (Max) @ Id: 4V @ 210µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 400 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1700 Stücke
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IPDD60R125G7XTMA1 Infineon-IPDD60R125G7-DS-v02_00-EN.pdf?fileId=5546d4626102d35a0161706cba27778f
IPDD60R125G7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 20A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6.4A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1700 Stücke
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IPDD60R080G7XTMA1 Infineon-IPDD60R080G7-DS-v02_00-EN.pdf?fileId=5546d4626102d35a016170882f757a07
IPDD60R080G7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 29A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 9.7A, 10V
Power Dissipation (Max): 174W (Tc)
Vgs(th) (Max) @ Id: 4V @ 490µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 400 V
auf Bestellung 1700 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1700+5.72 EUR
Mindestbestellmenge: 1700 Stücke
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IPDD60R050G7XTMA1 Infineon-IPDD60R050G7-DS-v02_00-EN.pdf?fileId=5546d4626102d35a0161707eb2f97810
IPDD60R050G7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 47A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 15.9A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 400 V
auf Bestellung 1700 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1700+8.69 EUR
Mindestbestellmenge: 1700 Stücke
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IPDD60R190G7XTMA1 Infineon-IPDD60R190G7-DS-v02_00-EN.pdf?fileId=5546d4626102d35a01617087dc0f79ea
IPDD60R190G7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 13A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 4.2A, 10V
Power Dissipation (Max): 76W (Tc)
Vgs(th) (Max) @ Id: 4V @ 210µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 400 V
auf Bestellung 268 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.31 EUR
10+4.77 EUR
50+3.68 EUR
100+3.33 EUR
Mindestbestellmenge: 3 Stücke
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IPDD60R125G7XTMA1 Infineon-IPDD60R125G7-DS-v02_00-EN.pdf?fileId=5546d4626102d35a0161706cba27778f
IPDD60R125G7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 20A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6.4A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
Produkt ist nicht verfügbar
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IPDD60R050G7XTMA1 Infineon-IPDD60R050G7-DS-v02_00-EN.pdf?fileId=5546d4626102d35a0161707eb2f97810
IPDD60R050G7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 47A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 15.9A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 400 V
auf Bestellung 1710 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+20.06 EUR
10+13.82 EUR
100+10.63 EUR
Mindestbestellmenge: 2 Stücke
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IPN70R1K2P7SATMA1 Infineon-IPN70R1K2P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f524b972d6b74
IPN70R1K2P7SATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 4.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 900mA, 10V
Power Dissipation (Max): 6.3W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 174 pF @ 400 V
auf Bestellung 1468 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
19+1.15 EUR
22+1 EUR
100+0.69 EUR
500+0.57 EUR
1000+0.49 EUR
Mindestbestellmenge: 19 Stücke
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IPN70R2K0P7SATMA1 Infineon-IPN70R2K0P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f526712fe6b76
IPN70R2K0P7SATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 400 V
auf Bestellung 14553 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
15+1.43 EUR
24+0.88 EUR
100+0.57 EUR
500+0.44 EUR
1000+0.39 EUR
Mindestbestellmenge: 15 Stücke
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IPN70R450P7SATMA1 Infineon-IPN70R450P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f526728366b78
IPN70R450P7SATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 10A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2.3A, 10V
Power Dissipation (Max): 7.1W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 120µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 400 V
auf Bestellung 1290 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.15 EUR
16+1.36 EUR
100+0.89 EUR
500+0.69 EUR
1000+0.63 EUR
Mindestbestellmenge: 10 Stücke
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IPN80R1K2P7ATMA1 infineon-ipn80r1k2p7-ds-en.pdf
IPN80R1K2P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 4.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 6.8W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
auf Bestellung 2912 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.92 EUR
12+1.83 EUR
100+1.23 EUR
500+0.95 EUR
1000+0.87 EUR
Mindestbestellmenge: 8 Stücke
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IPN80R3K3P7ATMA1 infineon-ipn80r3k3p7-ds-en.pdf
IPN80R3K3P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 1.9A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 590mA, 10V
Power Dissipation (Max): 6.1W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 500 V
auf Bestellung 45 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+2.05 EUR
17+1.29 EUR
Mindestbestellmenge: 11 Stücke
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1EDN7511BXUSA1 Infineon-1EDN751x_1EDN851x_Rev%202.0-DS-v02_01-EN.pdf?fileId=5546d462576f34750157e176df0b3ca7
1EDN7511BXUSA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: PG-SOT23-6-2
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.57 EUR
6000+0.56 EUR
9000+0.55 EUR
Mindestbestellmenge: 3000 Stücke
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1EDN8511BXUSA1 Infineon-1EDN751x_1EDN851x_Rev+2.0-DS-v02_00-EN.pdf?fileId=5546d462576f34750157e176df0b3ca7
1EDN8511BXUSA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 8V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: PG-SOT23-6-2
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: GaN FET, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 4A, 8A
DigiKey Programmable: Not Verified
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.58 EUR
6000+0.56 EUR
15000+0.55 EUR
Mindestbestellmenge: 3000 Stücke
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2EDS8165HXUMA1 Infineon-2EDF7175F-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163b09026be3060
2EDS8165HXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 1A, 2A
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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BSC019N06NSATMA1 Infineon-BSC019N06NS-DS-v02_01-EN.pdf?fileId=5546d462602a9dc80160546789c12ca7
BSC019N06NSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 100A TDSON-8 FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Ta)
Vgs(th) (Max) @ Id: 3.3V @ 74µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 30 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+1.2 EUR
15000+1.13 EUR
Mindestbestellmenge: 5000 Stücke
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DD171N16KKHOSA1
Hersteller: Infineon Technologies
Description: THYR / DIODE MODULE DK
Produkt ist nicht verfügbar
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DZ435N40KS01HPSA1 Infineon-DZ435N-DS-v03_02-EN.pdf?fileId=db3a3043243b5f170124e2ccd4426304
DZ435N40KS01HPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 4KV 700A PB501-1
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
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DZ950N44KS01HPSA1 Infineon-DZ950N-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b43061c7502e
DZ950N44KS01HPSA1
Hersteller: Infineon Technologies
Description: THYR / DIODE MODULE DK
Produkt ist nicht verfügbar
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FF1800R12IE5PBPSA1 Infineon-FF1800R12IE5-DS-v03_00-EN.pdf?fileId=5546d4625cc9456a015d07eef79f7f18
FF1800R12IE5PBPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 1800A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1800A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 98.5 nF @ 25 V
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FF225R12ME4PBPSA1 Infineon-FF225R12ME4P-DS-v03_00-EN.pdf?fileId=5546d4625b3ca4ec015b3e4257d506a6
FF225R12ME4PBPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 450A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
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FP50R12N2T4B16BOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE LOW POWER ECONO
Packaging: Tray
Part Status: Discontinued at Digi-Key
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FP75R12N2T4B11BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE LOW POWER ECONO
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FP75R12N2T4B16BOSA1 448_FP75R12N2T4PBPSA1.pdf
Hersteller: Infineon Technologies
Description: IGBT MODULE LOW POWER ECONO
Packaging: Tray
Produkt ist nicht verfügbar
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FP75R12N2T4BOSA1
FP75R12N2T4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE LOW POWER ECONO
Packaging: Tray
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+259.77 EUR
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GATELEAD1110008XPSA1
Hersteller: Infineon Technologies
Description: HIGH POWER THYR / DIO
Produkt ist nicht verfügbar
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GATELEADMPWHPK1258XXPSA1
Hersteller: Infineon Technologies
Description: STD THYR/DIODEN DISC
Produkt ist nicht verfügbar
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GLHUELSE1626XPSA1
Hersteller: Infineon Technologies
Description: DUMMY 57
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GLHUELSE1627XPSA1
Hersteller: Infineon Technologies
Description: DUMMY 57
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ICL5102XUMA1 ICL5102.pdf
ICL5102XUMA1
Hersteller: Infineon Technologies
Description: IC LED DRIVER OFFL NO 16DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.3MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: LED Lighting
Internal Switch(s): No
Topology: Half-Bridge
Supplier Device Package: PG-DSO-16-23
Dimming: No
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Part Status: Obsolete
Produkt ist nicht verfügbar
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IKA15N65ET6XKSA2 Infineon-IKA15N65ET6-DS-v02_02-EN.pdf?fileId=5546d4625e763904015e844d635e5280
IKA15N65ET6XKSA2
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 17A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 69 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 11.5A
Supplier Device Package: PG-TO220-3-FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/117ns
Switching Energy: 230µJ (on), 110µJ (off)
Test Condition: 400V, 11.5A, 47Ohm, 15V
Gate Charge: 37 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 57.5 A
Power - Max: 45 W
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Mindestbestellmenge: 500 Stücke
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IMC101TF064XUMA1 Infineon-IMC100-DS-v01_02-EN.pdf?fileId=5546d46265487f7b016584a0147e7660
IMC101TF064XUMA1
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 3V-5.5V 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Controller
Current - Output: 50mA
Interface: Analog, PWM
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 5.5V
Applications: Home Appliance
Supplier Device Package: PG-LQFP-64-26
Motor Type - AC, DC: AC, Synchronous
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 1900 Stücke
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IMC102TF064XUMA1 infineon-imc100-datasheet-cn.pdf
IMC102TF064XUMA1
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 3V-5.5V 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Controller
Current - Output: 50mA
Interface: Analog, PWM
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 5.5V
Applications: Home Appliance
Supplier Device Package: PG-LQFP-64-26
Motor Type - AC, DC: AC, Synchronous
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 1900 Stücke
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