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IAUT260N10S5N019ATMA1 IAUT260N10S5N019ATMA1 Infineon Technologies Infineon-IAUT260N10S5N019-DS-v01_00-EN.pdf?fileId=5546d4625ee5d4cd015f2460488e3241 Description: MOSFET N-CH 100V 260A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 210µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11830 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUT300N10S5N015ATMA1 IAUT300N10S5N015ATMA1 Infineon Technologies Infineon-IAUT300N10S5N015-DS-v01_00-EN.pdf?fileId=5546d4625ee5d4cd015f2469d7203245 Description: MOSFET N-CH 100V 300A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16011 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3900 Stücke:
Lieferzeit 10-14 Tag (e)
2000+3.67 EUR
Mindestbestellmenge: 2000
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ICE5AR0680AGXUMA1 ICE5AR0680AGXUMA1 Infineon Technologies Infineon-ICE5xRxxxxAG-DS-v02_00-EN.pdf?fileId=5546d462602a9dc801607d6123c745a6 Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Non-Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Control Features: EN, Soft Start, Sync
Part Status: Active
Power (Watts): 40 W
Produkt ist nicht verfügbar
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ICE5AR4770AGXUMA1 ICE5AR4770AGXUMA1 Infineon Technologies Infineon-ICE5xRxxxxAG-DS-v02_00-EN.pdf?fileId=5546d462602a9dc801607d6123c745a6 Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Non-Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Control Features: EN, Soft Start, Sync
Part Status: Active
Power (Watts): 15 W
Produkt ist nicht verfügbar
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ICE5ASAGXUMA1 ICE5ASAGXUMA1 Infineon Technologies INFN-S-A0004583216-1.pdf?t.download=true&u=5oefqw Description: IC OFFLINE SWITCH FLYBACK 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Output Isolation: Non-Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DSO-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Control Features: EN, Soft Start, Sync
Part Status: Active
Power (Watts): 60 W
auf Bestellung 5000 Stücke:
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2500+0.97 EUR
5000+0.92 EUR
Mindestbestellmenge: 2500
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ICE5GR1680AGXUMA1 ICE5GR1680AGXUMA1 Infineon Technologies Infineon-ICE5xRxxxxAG-DS-v02_00-EN.pdf?fileId=5546d462602a9dc801607d6123c745a6 Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 125kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Non-Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Control Features: EN, Soft Start, Sync
Part Status: Active
Power (Watts): 27 W
Produkt ist nicht verfügbar
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IDFW40E65D1EXKSA1 IDFW40E65D1EXKSA1 Infineon Technologies Infineon-IDFW40E65D1E-DS-v02_02-EN.pdf?fileId=5546d462602a9dc8016034fef5752df5 Description: DIODE GP 650V 42A TO247-3-AI
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 76 ns
Technology: Standard
Current - Average Rectified (Io): 42A
Supplier Device Package: PG-TO247-3-AI
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 40 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 210 Stücke:
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2+9.15 EUR
10+6.10 EUR
Mindestbestellmenge: 2
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IKFW40N60DH3EXKSA1 IKFW40N60DH3EXKSA1 Infineon Technologies Infineon-IKFW40N60DH3E-DS-v02_01-EN.pdf?fileId=5546d462602a9dc8016034ff098b2df8 Description: IGBT TRENCH FS 600V 34A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 72 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: PG-TO247-3-AI
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/144ns
Switching Energy: 870µJ (on), 360µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 107 nC
Part Status: Active
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 111 W
auf Bestellung 189 Stücke:
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2+9.40 EUR
30+5.34 EUR
120+4.44 EUR
Mindestbestellmenge: 2
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IKFW50N60DH3EXKSA1 IKFW50N60DH3EXKSA1 Infineon Technologies Infineon-IKFW50N60DH3E-DS-v02_01-EN.pdf?fileId=5546d462602a9dc8016034ff1f782dfb Description: IGBT TRENCH FS 600V 40A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 64 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
Supplier Device Package: PG-TO247-3-AI
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 21ns/174ns
Switching Energy: 1.28mJ (on), 560µJ (off)
Test Condition: 400V, 40A, 8Ohm, 15V
Gate Charge: 160 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 130 W
auf Bestellung 143 Stücke:
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2+10.03 EUR
30+5.72 EUR
120+4.78 EUR
Mindestbestellmenge: 2
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IKFW50N60DH3XKSA1 IKFW50N60DH3XKSA1 Infineon Technologies Infineon-IKFW50N60DH3-DS-v02_01-EN.pdf?fileId=5546d462602a9dc8016035081e982ea7 Description: IGBT TRENCH FS 600V 53A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 64 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: PG-TO247-3-AI
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 25ns/212ns
Switching Energy: 1.22mJ (on), 610µJ (off)
Test Condition: 400V, 40A, 8Ohm, 15V
Gate Charge: 210 nC
Part Status: Active
Current - Collector (Ic) (Max): 53 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 145 W
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IKFW60N60DH3EXKSA1 IKFW60N60DH3EXKSA1 Infineon Technologies Infineon-IKFW60N60DH3E-DS-v02_01-EN.pdf?fileId=5546d462602a9dc8016034ff33752dfe Description: IGBT TRENCH FS 600V 53A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Supplier Device Package: PG-TO247-3-AI
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/170ns
Switching Energy: 1.57mJ (on), 720µJ (off)
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 210 nC
Part Status: Active
Current - Collector (Ic) (Max): 53 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 141 W
Produkt ist nicht verfügbar
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IPAN70R450P7SXKSA1 IPAN70R450P7SXKSA1 Infineon Technologies Infineon-IPAN70R450P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f499adf55405f Description: MOSFET N-CH 700V 10A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2.3A, 10V
Power Dissipation (Max): 22.7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 120µA
Supplier Device Package: PG-TO220-FP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 400 V
Produkt ist nicht verfügbar
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IPN70R1K2P7SATMA1 IPN70R1K2P7SATMA1 Infineon Technologies Infineon-IPN70R1K2P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f524b972d6b74 Description: MOSFET N-CH 700V 4.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 900mA, 10V
Power Dissipation (Max): 6.3W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 174 pF @ 400 V
Produkt ist nicht verfügbar
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IPN70R2K0P7SATMA1 IPN70R2K0P7SATMA1 Infineon Technologies Infineon-IPN70R2K0P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f526712fe6b76 Description: MOSFET N-CH 700V 3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 400 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.30 EUR
6000+0.28 EUR
9000+0.26 EUR
Mindestbestellmenge: 3000
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IPN70R450P7SATMA1 IPN70R450P7SATMA1 Infineon Technologies Infineon-IPN70R450P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f526728366b78 Description: MOSFET N-CH 700V 10A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2.3A, 10V
Power Dissipation (Max): 7.1W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 120µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 400 V
Produkt ist nicht verfügbar
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IPN80R1K2P7ATMA1 IPN80R1K2P7ATMA1 Infineon Technologies Infineon-IPN80R1K2P7-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f52704f9e6b7e Description: MOSFET N-CH 800V 4.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 6.8W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
auf Bestellung 3000 Stücke:
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3000+0.63 EUR
Mindestbestellmenge: 3000
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IPN80R3K3P7ATMA1 IPN80R3K3P7ATMA1 Infineon Technologies Infineon-IPN80R3K3P7-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f528288916b80 Description: MOSFET N-CH 800V 1.9A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 590mA, 10V
Power Dissipation (Max): 6.1W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 500 V
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IPN80R600P7ATMA1 IPN80R600P7ATMA1 Infineon Technologies Infineon-IPN80R600P7-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f528bb8556b82 Description: MOSFET N-CH 800V 8A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 7.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 500 V
Produkt ist nicht verfügbar
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IPN80R750P7ATMA1 IPN80R750P7ATMA1 Infineon Technologies Infineon-IPN80R750P7-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f528bca636b84 Description: MOSFET N-CH 800V 7A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2.7A, 10V
Power Dissipation (Max): 7.2W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
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3000+0.82 EUR
6000+0.78 EUR
Mindestbestellmenge: 3000
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IPS65R1K0CEAKMA2 Infineon Technologies Infineon-IPS65R1K0CE-DS-v02_02-EN.pdf?fileId=5546d46249be182c0149c7a3c90c1e8a Description: CONSUMER
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CY8C5266FNI-LP205T CY8C5266FNI-LP205T Infineon Technologies download Description: IC MCU 32BIT 64KB FLASH 99WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 99-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12b SAR; D/A 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 99-WLCSP (5.19x5.94)
Part Status: Active
Number of I/O: 62
DigiKey Programmable: Not Verified
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S25FL032P0XMFA000 S25FL032P0XMFA000 Infineon Technologies S25FL032P_RevL_5-19-17.pdf Description: IC FLASH 32MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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S25FL032P0XMFA003 S25FL032P0XMFA003 Infineon Technologies S25FL032P_RevL_5-19-17.pdf Description: IC FLASH 32MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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S25FL032P0XNFA010 S25FL032P0XNFA010 Infineon Technologies S25FL032P_RevL_5-19-17.pdf Description: IC FLASH 32MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Grade: Automotive
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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S25FL032P0XNFA013 S25FL032P0XNFA013 Infineon Technologies S25FL032P_RevL_5-19-17.pdf Description: IC FLASH 32MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Grade: Automotive
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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S25FL128LDPBHV030 S25FL128LDPBHV030 Infineon Technologies Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Description: IC FLASH 128MBIT SPI/QUAD 24BGA
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S25FL128LDPBHV033 S25FL128LDPBHV033 Infineon Technologies Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Description: IC FLASH 128MBIT SPI/QUAD 24BGA
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S25FS128SAGNFI003 S25FS128SAGNFI003 Infineon Technologies Infineon-S25FS128S_S25FS256S_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_MirrorBit(R)_Non-Volatile_Flash-DataSheet-v14_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ed6b5ab5758&utm_source=cypress&utm_medium=referral&utm_campaign Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
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S25FS128SDSBHM200 S25FS128SDSBHM200 Infineon Technologies Infineon-S25FS128S_S25FS256S_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_MirrorBit(R)_Non-Volatile_Flash-DataSheet-v14_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ed6b5ab5758&utm_source=cypress&utm_medium=referral&utm_campaign Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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S29GL01GT10FAI030 S29GL01GT10FAI030 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 128M x 8
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S29GL01GT10FHI040 S29GL01GT10FHI040 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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S70FL01GSDSMFB010 S70FL01GSDSMFB010 Infineon Technologies download Description: IC FLASH 1GBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
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S70FL01GSDSMFV010 S70FL01GSDSMFV010 Infineon Technologies download Description: IC FLASH 1GBIT SPI/QUAD 16SOIC
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S70KL1281DABHV023 S70KL1281DABHV023 Infineon Technologies Infineon-S27KL0641_S27KS0641_S70KL1281_S70KS1281_3.0_V_1.8_V_64_Mb_(8_MB)_128_Mb_(16_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed18c684db5&utm_source=cypress&utm_medium=referral&utm_ca Description: IC PSRAM 128MBIT PARALLEL 24FBGA
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S70KS1281DPBHV023 S70KS1281DPBHV023 Infineon Technologies Infineon-S27KL0641_S27KS0641_S70KL1281_S70KS1281_3.0_V_1.8_V_64_Mb_(8_MB)_128_Mb_(16_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed18c684db5&utm_source=cypress&utm_medium=referral&utm_ca Description: IC PSRAM 128MBIT PARALLEL 24FBGA
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IPB60R060P7ATMA1 IPB60R060P7ATMA1 Infineon Technologies Infineon-IPB60R060P7-DS-v02_00-EN.pdf?fileId=5546d4625ee5d4cd015f2a6b797c047f Description: MOSFET N-CH 600V 48A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V
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IPB60R080P7ATMA1 IPB60R080P7ATMA1 Infineon Technologies Infineon-IPB60R080P7-DS-v02_00-EN.pdf?fileId=5546d4625ee5d4cd015f2a7dc74c0483 Description: MOSFET N-CH 600V 37A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 11.8A, 10V
Power Dissipation (Max): 129W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 400 V
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IPB60R099P7ATMA1 IPB60R099P7ATMA1 Infineon Technologies Infineon-IPB60R099P7-DS-v02_00-EN.pdf?fileId=5546d4625ee5d4cd015f2a8704aa0489 Description: MOSFET N-CH 600V 31A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 10.5A, 10V
Power Dissipation (Max): 117W (Tc)
Vgs(th) (Max) @ Id: 4V @ 530µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 400 V
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IPB60R120P7ATMA1 IPB60R120P7ATMA1 Infineon Technologies Infineon-IPB60R120P7-DS-v02_00-EN.pdf?fileId=5546d4625ee5d4cd015f2a901853048b Description: MOSFET N-CH 600V 26A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 8.2A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 410µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 400 V
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IPB60R280P7ATMA1 IPB60R280P7ATMA1 Infineon Technologies Infineon-IPB60R280P7-DS-v02_00-EN.pdf?fileId=5546d4625ee5d4cd015f2a7ddc6e0485 Description: MOSFET N-CH 600V 12A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
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IPB60R360P7ATMA1 IPB60R360P7ATMA1 Infineon Technologies Infineon-IPB60R360P7-DS-v02_00-EN.pdf?fileId=5546d4625ee5d4cd015f2a86f0020487 Description: MOSFET N-CH 600V 9A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
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IPL60R065P7AUMA1 IPL60R065P7AUMA1 Infineon Technologies Infineon-IPL60R065P7-DS-v02_00-EN.pdf?fileId=5546d4625ee5d4cd015eebece9815b36 Description: MOSFET N-CH 600V 41A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 15.9A, 10V
Power Dissipation (Max): 201W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V
auf Bestellung 10388 Stücke:
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IPL60R105P7AUMA1 IPL60R105P7AUMA1 Infineon Technologies Infineon-IPL60R105P7-DS-v02_00-EN.pdf?fileId=5546d4625ee5d4cd015eebecfd455b39 Description: MOSFET N-CH 600V 33A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10.5A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 4V @ 530µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 400 V
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500+3.00 EUR
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IPL60R125P7AUMA1 IPL60R125P7AUMA1 Infineon Technologies Infineon-IPL60R125P7-DS-v02_00-EN.pdf?fileId=5546d4625ee5d4cd015eebed2c195b42 Description: MOSFET N-CH 600V 27A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.2A, 10V
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 4V @ 410µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 400 V
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100+2.41 EUR
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IPL60R285P7AUMA1 IPL60R285P7AUMA1 Infineon Technologies Infineon-IPL60R285P7-DS-v02_00-EN.pdf?fileId=5546d4625ee5d4cd015eebed0cea5b3c Description: MOSFET N-CH 600V 13A 4VSON
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TLE94106ESXUMA1 TLE94106ESXUMA1 Infineon Technologies Infineon-TLE94106ES-DS-v01_00-EN.pdf?fileId=5546d46261ff577701621efb5c137b1a Description: IC HALF BRIDGE DRIVER 2A 24TSDSO
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (6)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 850mOhm LS, 850mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 2A
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 18V
Supplier Device Package: PG-TSDSO-24
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Active
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TLE4276SVAKSA2 TLE4276SVAKSA2 Infineon Technologies Infineon-TLE4276-DS-v02_80-EN.pdf?fileId=5546d4626102d35a01612c4b988a6576 Description: IC REG LIN POS ADJ 400MA TO220-5
Packaging: Tube
Package / Case: TO-220-5
Output Type: Adjustable
Mounting Type: Through Hole
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: P-TO220-5-43
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 2.5V
Control Features: Inhibit
Grade: Automotive
Part Status: Obsolete
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 25 mA
Qualification: AEC-Q100
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TLE4276GV50ATMA2 TLE4276GV50ATMA2 Infineon Technologies TLE4276_Rev2.8_1-10-18.pdf Description: IC REG LIN 5V 400MA TO263-5-1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-5-1
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit
Grade: Automotive
Part Status: Discontinued at Digi-Key
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 25 mA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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ICE5AR0680BZSXKLA1 ICE5AR0680BZSXKLA1 Infineon Technologies Infineon-ICE5ARxxxxBZS-DataSheet-v02_30-EN.pdf?fileId=5546d462602a9dc801607d612b2645ad Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DIP-7
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Control Features: EN, Soft Start, Sync
Part Status: Active
Power (Watts): 39 W
auf Bestellung 1564 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.34 EUR
10+2.47 EUR
50+2.12 EUR
100+2.01 EUR
250+1.89 EUR
500+1.83 EUR
1000+1.77 EUR
Mindestbestellmenge: 6
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ICE5ASAGXUMA1 ICE5ASAGXUMA1 Infineon Technologies INFN-S-A0004583216-1.pdf?t.download=true&u=5oefqw Description: IC OFFLINE SWITCH FLYBACK 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Output Isolation: Non-Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DSO-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Control Features: EN, Soft Start, Sync
Part Status: Active
Power (Watts): 60 W
auf Bestellung 5000 Stücke:
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ICE5GSAGXUMA1 ICE5GSAGXUMA1 Infineon Technologies INFN-S-A0004583216-1.pdf?t.download=true&u=5oefqw Description: IC OFFLINE SWITCH FLYBACK 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 125kHz
Internal Switch(s): Yes
Output Isolation: Non-Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DSO-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Control Features: EN, Soft Start, Sync
Part Status: Active
Power (Watts): 60 W
auf Bestellung 3201 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.92 EUR
13+1.39 EUR
25+1.26 EUR
100+1.11 EUR
250+1.04 EUR
500+1.00 EUR
1000+0.96 EUR
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ICE5AR4770AGXUMA1 ICE5AR4770AGXUMA1 Infineon Technologies Infineon-ICE5xRxxxxAG-DS-v02_00-EN.pdf?fileId=5546d462602a9dc801607d6123c745a6 Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Non-Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Control Features: EN, Soft Start, Sync
Part Status: Active
Power (Watts): 15 W
Produkt ist nicht verfügbar
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ICE5GR1680AGXUMA1 ICE5GR1680AGXUMA1 Infineon Technologies Infineon-ICE5xRxxxxAG-DS-v02_00-EN.pdf?fileId=5546d462602a9dc801607d6123c745a6 Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 125kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Non-Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Control Features: EN, Soft Start, Sync
Part Status: Active
Power (Watts): 27 W
auf Bestellung 2280 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.07 EUR
10+3.65 EUR
25+3.44 EUR
100+2.93 EUR
250+2.75 EUR
500+2.41 EUR
1000+2.00 EUR
Mindestbestellmenge: 5
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ICE5AR0680AGXUMA1 ICE5AR0680AGXUMA1 Infineon Technologies Infineon-ICE5xRxxxxAG-DS-v02_00-EN.pdf?fileId=5546d462602a9dc801607d6123c745a6 Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Non-Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Control Features: EN, Soft Start, Sync
Part Status: Active
Power (Watts): 40 W
auf Bestellung 13 Stücke:
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4+5.37 EUR
10+4.81 EUR
Mindestbestellmenge: 4
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DF450R12N2E4PB11BPSA1 Infineon Technologies Description: IGBT MODULE LOW POWER ECONO
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DF600R12N2E4PB11BPSA1 Infineon Technologies Description: IGBT MODULE LOW POWER ECONO
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FD16001200R17HP4KB2BOSA1 FD16001200R17HP4KB2BOSA1 Infineon Technologies Infineon-FD1600_1200R17HP4-K_B2-DS-v03_01-EN.pdf?fileId=5546d462525dbac401527df348ad6a9e Description: IGBT MOD 1700V 1600A 1050W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Brake Chopper
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1600A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 1600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 130 nF @ 25 V
auf Bestellung 1 Stücke:
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1+2183.72 EUR
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FF1200R17IP5BPSA1 FF1200R17IP5BPSA1 Infineon Technologies Infineon-FF1200R17IP5-DS-v03_00-EN.pdf?fileId=5546d4625cc9456a015d07ef5df47f1e Description: IGBT MOD 1700V 1200A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 68 nF @ 25 V
Produkt ist nicht verfügbar
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FF1800R12IE5BPSA1 FF1800R12IE5BPSA1 Infineon Technologies Infineon-FF1800R12IE5-DS-v03_00-EN.pdf?fileId=5546d4625cc9456a015d07eef79f7f18 Description: IGBT MOD 1200V 1800A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1800A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 98.5 nF @ 25 V
auf Bestellung 1 Stücke:
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1+1345.03 EUR
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BGSA12UGL8E6327XTSA1 BGSA12UGL8E6327XTSA1 Infineon Technologies Infineon-BGSA12UGL8-DataSheet-v02_03-EN.pdf?fileId=5546d46262b31d2e0162d8603afd75c5 Description: IC RF SWITCH SPDT TSLP8-1
Packaging: Cut Tape (CT)
Package / Case: 8-XFLGA
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: CDMA, EDGE, LTE, W-CDMA
Voltage - Supply: 1.8V ~ 3.6V
P1dB: 11.2dBm
Supplier Device Package: PG-TSLP-8-1
Part Status: Active
auf Bestellung 29878 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.81 EUR
26+0.70 EUR
27+0.66 EUR
100+0.60 EUR
250+0.57 EUR
500+0.54 EUR
1000+0.52 EUR
5000+0.47 EUR
Mindestbestellmenge: 22
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IAUT260N10S5N019ATMA1 Infineon-IAUT260N10S5N019-DS-v01_00-EN.pdf?fileId=5546d4625ee5d4cd015f2460488e3241
IAUT260N10S5N019ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 260A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 210µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11830 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUT300N10S5N015ATMA1 Infineon-IAUT300N10S5N015-DS-v01_00-EN.pdf?fileId=5546d4625ee5d4cd015f2469d7203245
IAUT300N10S5N015ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 300A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16011 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+3.67 EUR
Mindestbestellmenge: 2000
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ICE5AR0680AGXUMA1 Infineon-ICE5xRxxxxAG-DS-v02_00-EN.pdf?fileId=5546d462602a9dc801607d6123c745a6
ICE5AR0680AGXUMA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Non-Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Control Features: EN, Soft Start, Sync
Part Status: Active
Power (Watts): 40 W
Produkt ist nicht verfügbar
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ICE5AR4770AGXUMA1 Infineon-ICE5xRxxxxAG-DS-v02_00-EN.pdf?fileId=5546d462602a9dc801607d6123c745a6
ICE5AR4770AGXUMA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Non-Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Control Features: EN, Soft Start, Sync
Part Status: Active
Power (Watts): 15 W
Produkt ist nicht verfügbar
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ICE5ASAGXUMA1 INFN-S-A0004583216-1.pdf?t.download=true&u=5oefqw
ICE5ASAGXUMA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Output Isolation: Non-Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DSO-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Control Features: EN, Soft Start, Sync
Part Status: Active
Power (Watts): 60 W
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.97 EUR
5000+0.92 EUR
Mindestbestellmenge: 2500
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ICE5GR1680AGXUMA1 Infineon-ICE5xRxxxxAG-DS-v02_00-EN.pdf?fileId=5546d462602a9dc801607d6123c745a6
ICE5GR1680AGXUMA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 125kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Non-Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Control Features: EN, Soft Start, Sync
Part Status: Active
Power (Watts): 27 W
Produkt ist nicht verfügbar
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IDFW40E65D1EXKSA1 Infineon-IDFW40E65D1E-DS-v02_02-EN.pdf?fileId=5546d462602a9dc8016034fef5752df5
IDFW40E65D1EXKSA1
Hersteller: Infineon Technologies
Description: DIODE GP 650V 42A TO247-3-AI
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 76 ns
Technology: Standard
Current - Average Rectified (Io): 42A
Supplier Device Package: PG-TO247-3-AI
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 40 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 210 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.15 EUR
10+6.10 EUR
Mindestbestellmenge: 2
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IKFW40N60DH3EXKSA1 Infineon-IKFW40N60DH3E-DS-v02_01-EN.pdf?fileId=5546d462602a9dc8016034ff098b2df8
IKFW40N60DH3EXKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 34A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 72 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: PG-TO247-3-AI
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/144ns
Switching Energy: 870µJ (on), 360µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 107 nC
Part Status: Active
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 111 W
auf Bestellung 189 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.40 EUR
30+5.34 EUR
120+4.44 EUR
Mindestbestellmenge: 2
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IKFW50N60DH3EXKSA1 Infineon-IKFW50N60DH3E-DS-v02_01-EN.pdf?fileId=5546d462602a9dc8016034ff1f782dfb
IKFW50N60DH3EXKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 40A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 64 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
Supplier Device Package: PG-TO247-3-AI
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 21ns/174ns
Switching Energy: 1.28mJ (on), 560µJ (off)
Test Condition: 400V, 40A, 8Ohm, 15V
Gate Charge: 160 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 130 W
auf Bestellung 143 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.03 EUR
30+5.72 EUR
120+4.78 EUR
Mindestbestellmenge: 2
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IKFW50N60DH3XKSA1 Infineon-IKFW50N60DH3-DS-v02_01-EN.pdf?fileId=5546d462602a9dc8016035081e982ea7
IKFW50N60DH3XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 53A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 64 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: PG-TO247-3-AI
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 25ns/212ns
Switching Energy: 1.22mJ (on), 610µJ (off)
Test Condition: 400V, 40A, 8Ohm, 15V
Gate Charge: 210 nC
Part Status: Active
Current - Collector (Ic) (Max): 53 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 145 W
Produkt ist nicht verfügbar
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IKFW60N60DH3EXKSA1 Infineon-IKFW60N60DH3E-DS-v02_01-EN.pdf?fileId=5546d462602a9dc8016034ff33752dfe
IKFW60N60DH3EXKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 53A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Supplier Device Package: PG-TO247-3-AI
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/170ns
Switching Energy: 1.57mJ (on), 720µJ (off)
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 210 nC
Part Status: Active
Current - Collector (Ic) (Max): 53 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 141 W
Produkt ist nicht verfügbar
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IPAN70R450P7SXKSA1 Infineon-IPAN70R450P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f499adf55405f
IPAN70R450P7SXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 10A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2.3A, 10V
Power Dissipation (Max): 22.7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 120µA
Supplier Device Package: PG-TO220-FP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 400 V
Produkt ist nicht verfügbar
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IPN70R1K2P7SATMA1 Infineon-IPN70R1K2P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f524b972d6b74
IPN70R1K2P7SATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 4.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 900mA, 10V
Power Dissipation (Max): 6.3W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 174 pF @ 400 V
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IPN70R2K0P7SATMA1 Infineon-IPN70R2K0P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f526712fe6b76
IPN70R2K0P7SATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 400 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.30 EUR
6000+0.28 EUR
9000+0.26 EUR
Mindestbestellmenge: 3000
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IPN70R450P7SATMA1 Infineon-IPN70R450P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f526728366b78
IPN70R450P7SATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 10A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2.3A, 10V
Power Dissipation (Max): 7.1W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 120µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 400 V
Produkt ist nicht verfügbar
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IPN80R1K2P7ATMA1 Infineon-IPN80R1K2P7-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f52704f9e6b7e
IPN80R1K2P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 4.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V
Power Dissipation (Max): 6.8W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 80µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 500 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.63 EUR
Mindestbestellmenge: 3000
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IPN80R3K3P7ATMA1 Infineon-IPN80R3K3P7-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f528288916b80
IPN80R3K3P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 1.9A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 590mA, 10V
Power Dissipation (Max): 6.1W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 500 V
Produkt ist nicht verfügbar
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IPN80R600P7ATMA1 Infineon-IPN80R600P7-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f528bb8556b82
IPN80R600P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 8A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 7.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 500 V
Produkt ist nicht verfügbar
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IPN80R750P7ATMA1 Infineon-IPN80R750P7-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f528bca636b84
IPN80R750P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 7A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2.7A, 10V
Power Dissipation (Max): 7.2W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.82 EUR
6000+0.78 EUR
Mindestbestellmenge: 3000
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IPS65R1K0CEAKMA2 Infineon-IPS65R1K0CE-DS-v02_02-EN.pdf?fileId=5546d46249be182c0149c7a3c90c1e8a
Hersteller: Infineon Technologies
Description: CONSUMER
Produkt ist nicht verfügbar
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CY8C5266FNI-LP205T download
CY8C5266FNI-LP205T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 99WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 99-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12b SAR; D/A 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 99-WLCSP (5.19x5.94)
Part Status: Active
Number of I/O: 62
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL032P0XMFA000 S25FL032P_RevL_5-19-17.pdf
S25FL032P0XMFA000
Hersteller: Infineon Technologies
Description: IC FLASH 32MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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S25FL032P0XMFA003 S25FL032P_RevL_5-19-17.pdf
S25FL032P0XMFA003
Hersteller: Infineon Technologies
Description: IC FLASH 32MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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S25FL032P0XNFA010 S25FL032P_RevL_5-19-17.pdf
S25FL032P0XNFA010
Hersteller: Infineon Technologies
Description: IC FLASH 32MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Grade: Automotive
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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S25FL032P0XNFA013 S25FL032P_RevL_5-19-17.pdf
S25FL032P0XNFA013
Hersteller: Infineon Technologies
Description: IC FLASH 32MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Grade: Automotive
Part Status: Obsolete
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 4M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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S25FL128LDPBHV030 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
S25FL128LDPBHV030
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Produkt ist nicht verfügbar
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S25FL128LDPBHV033 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
S25FL128LDPBHV033
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Produkt ist nicht verfügbar
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S25FS128SAGNFI003 Infineon-S25FS128S_S25FS256S_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_MirrorBit(R)_Non-Volatile_Flash-DataSheet-v14_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ed6b5ab5758&utm_source=cypress&utm_medium=referral&utm_campaign
S25FS128SAGNFI003
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FS128SDSBHM200 Infineon-S25FS128S_S25FS256S_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_MirrorBit(R)_Non-Volatile_Flash-DataSheet-v14_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ed6b5ab5758&utm_source=cypress&utm_medium=referral&utm_campaign
S25FS128SDSBHM200
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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S29GL01GT10FAI030 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
S29GL01GT10FAI030
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 128M x 8
Produkt ist nicht verfügbar
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S29GL01GT10FHI040 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
S29GL01GT10FHI040
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S70FL01GSDSMFB010 download
S70FL01GSDSMFB010
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
Produkt ist nicht verfügbar
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S70FL01GSDSMFV010 download
S70FL01GSDSMFV010
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT SPI/QUAD 16SOIC
Produkt ist nicht verfügbar
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S70KL1281DABHV023 Infineon-S27KL0641_S27KS0641_S70KL1281_S70KS1281_3.0_V_1.8_V_64_Mb_(8_MB)_128_Mb_(16_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed18c684db5&utm_source=cypress&utm_medium=referral&utm_ca
S70KL1281DABHV023
Hersteller: Infineon Technologies
Description: IC PSRAM 128MBIT PARALLEL 24FBGA
Produkt ist nicht verfügbar
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S70KS1281DPBHV023 Infineon-S27KL0641_S27KS0641_S70KL1281_S70KS1281_3.0_V_1.8_V_64_Mb_(8_MB)_128_Mb_(16_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed18c684db5&utm_source=cypress&utm_medium=referral&utm_ca
S70KS1281DPBHV023
Hersteller: Infineon Technologies
Description: IC PSRAM 128MBIT PARALLEL 24FBGA
Produkt ist nicht verfügbar
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IPB60R060P7ATMA1 Infineon-IPB60R060P7-DS-v02_00-EN.pdf?fileId=5546d4625ee5d4cd015f2a6b797c047f
IPB60R060P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 48A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V
auf Bestellung 539 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.13 EUR
10+6.02 EUR
100+4.37 EUR
500+4.25 EUR
Mindestbestellmenge: 3
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IPB60R080P7ATMA1 Infineon-IPB60R080P7-DS-v02_00-EN.pdf?fileId=5546d4625ee5d4cd015f2a7dc74c0483
IPB60R080P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 37A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 11.8A, 10V
Power Dissipation (Max): 129W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 400 V
auf Bestellung 1379 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.46 EUR
10+5.02 EUR
100+3.61 EUR
500+3.37 EUR
Mindestbestellmenge: 3
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IPB60R099P7ATMA1 Infineon-IPB60R099P7-DS-v02_00-EN.pdf?fileId=5546d4625ee5d4cd015f2a8704aa0489
IPB60R099P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 31A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 10.5A, 10V
Power Dissipation (Max): 117W (Tc)
Vgs(th) (Max) @ Id: 4V @ 530µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 400 V
auf Bestellung 1039 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.28 EUR
10+4.35 EUR
100+3.20 EUR
500+2.76 EUR
Mindestbestellmenge: 3
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IPB60R120P7ATMA1 Infineon-IPB60R120P7-DS-v02_00-EN.pdf?fileId=5546d4625ee5d4cd015f2a901853048b
IPB60R120P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 26A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 8.2A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 410µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 400 V
auf Bestellung 2739 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.42 EUR
10+3.49 EUR
100+2.67 EUR
500+2.34 EUR
Mindestbestellmenge: 4
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IPB60R280P7ATMA1 Infineon-IPB60R280P7-DS-v02_00-EN.pdf?fileId=5546d4625ee5d4cd015f2a7ddc6e0485
IPB60R280P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 12A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
auf Bestellung 2236 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.92 EUR
10+2.54 EUR
100+1.75 EUR
500+1.39 EUR
Mindestbestellmenge: 5
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IPB60R360P7ATMA1 Infineon-IPB60R360P7-DS-v02_00-EN.pdf?fileId=5546d4625ee5d4cd015f2a86f0020487
IPB60R360P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 9A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
auf Bestellung 4133 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.82 EUR
10+2.15 EUR
100+1.61 EUR
500+1.32 EUR
Mindestbestellmenge: 7
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IPL60R065P7AUMA1 Infineon-IPL60R065P7-DS-v02_00-EN.pdf?fileId=5546d4625ee5d4cd015eebece9815b36
IPL60R065P7AUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 41A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 15.9A, 10V
Power Dissipation (Max): 201W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V
auf Bestellung 10388 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.04 EUR
10+8.15 EUR
100+5.95 EUR
500+5.17 EUR
Mindestbestellmenge: 2
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IPL60R105P7AUMA1 Infineon-IPL60R105P7-DS-v02_00-EN.pdf?fileId=5546d4625ee5d4cd015eebecfd455b39
IPL60R105P7AUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 33A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10.5A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 4V @ 530µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 400 V
auf Bestellung 10190 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.19 EUR
10+4.30 EUR
100+3.59 EUR
500+3.00 EUR
1000+2.86 EUR
Mindestbestellmenge: 4
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IPL60R125P7AUMA1 Infineon-IPL60R125P7-DS-v02_00-EN.pdf?fileId=5546d4625ee5d4cd015eebed2c195b42
IPL60R125P7AUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 27A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.2A, 10V
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 4V @ 410µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 400 V
auf Bestellung 5325 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.54 EUR
10+2.90 EUR
100+2.41 EUR
500+2.30 EUR
Mindestbestellmenge: 5
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IPL60R285P7AUMA1 Infineon-IPL60R285P7-DS-v02_00-EN.pdf?fileId=5546d4625ee5d4cd015eebed0cea5b3c
IPL60R285P7AUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 13A 4VSON
auf Bestellung 5770 Stücke:
Lieferzeit 10-14 Tag (e)
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TLE94106ESXUMA1 Infineon-TLE94106ES-DS-v01_00-EN.pdf?fileId=5546d46261ff577701621efb5c137b1a
TLE94106ESXUMA1
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 2A 24TSDSO
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (6)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 850mOhm LS, 850mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 2A
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 18V
Supplier Device Package: PG-TSDSO-24
Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.99 EUR
Mindestbestellmenge: 3000
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TLE4276SVAKSA2 Infineon-TLE4276-DS-v02_80-EN.pdf?fileId=5546d4626102d35a01612c4b988a6576
TLE4276SVAKSA2
Hersteller: Infineon Technologies
Description: IC REG LIN POS ADJ 400MA TO220-5
Packaging: Tube
Package / Case: TO-220-5
Output Type: Adjustable
Mounting Type: Through Hole
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: P-TO220-5-43
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 2.5V
Control Features: Inhibit
Grade: Automotive
Part Status: Obsolete
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 25 mA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE4276GV50ATMA2 TLE4276_Rev2.8_1-10-18.pdf
TLE4276GV50ATMA2
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 400MA TO263-5-1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-5-1
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit
Grade: Automotive
Part Status: Discontinued at Digi-Key
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 25 mA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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ICE5AR0680BZSXKLA1 Infineon-ICE5ARxxxxBZS-DataSheet-v02_30-EN.pdf?fileId=5546d462602a9dc801607d612b2645ad
ICE5AR0680BZSXKLA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DIP-7
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Control Features: EN, Soft Start, Sync
Part Status: Active
Power (Watts): 39 W
auf Bestellung 1564 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.34 EUR
10+2.47 EUR
50+2.12 EUR
100+2.01 EUR
250+1.89 EUR
500+1.83 EUR
1000+1.77 EUR
Mindestbestellmenge: 6
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ICE5ASAGXUMA1 INFN-S-A0004583216-1.pdf?t.download=true&u=5oefqw
ICE5ASAGXUMA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Output Isolation: Non-Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DSO-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Control Features: EN, Soft Start, Sync
Part Status: Active
Power (Watts): 60 W
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
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ICE5GSAGXUMA1 INFN-S-A0004583216-1.pdf?t.download=true&u=5oefqw
ICE5GSAGXUMA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 125kHz
Internal Switch(s): Yes
Output Isolation: Non-Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DSO-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Control Features: EN, Soft Start, Sync
Part Status: Active
Power (Watts): 60 W
auf Bestellung 3201 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.92 EUR
13+1.39 EUR
25+1.26 EUR
100+1.11 EUR
250+1.04 EUR
500+1.00 EUR
1000+0.96 EUR
Mindestbestellmenge: 10
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ICE5AR4770AGXUMA1 Infineon-ICE5xRxxxxAG-DS-v02_00-EN.pdf?fileId=5546d462602a9dc801607d6123c745a6
ICE5AR4770AGXUMA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Non-Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Control Features: EN, Soft Start, Sync
Part Status: Active
Power (Watts): 15 W
Produkt ist nicht verfügbar
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ICE5GR1680AGXUMA1 Infineon-ICE5xRxxxxAG-DS-v02_00-EN.pdf?fileId=5546d462602a9dc801607d6123c745a6
ICE5GR1680AGXUMA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 125kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Non-Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Control Features: EN, Soft Start, Sync
Part Status: Active
Power (Watts): 27 W
auf Bestellung 2280 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.07 EUR
10+3.65 EUR
25+3.44 EUR
100+2.93 EUR
250+2.75 EUR
500+2.41 EUR
1000+2.00 EUR
Mindestbestellmenge: 5
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ICE5AR0680AGXUMA1 Infineon-ICE5xRxxxxAG-DS-v02_00-EN.pdf?fileId=5546d462602a9dc801607d6123c745a6
ICE5AR0680AGXUMA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Non-Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Control Features: EN, Soft Start, Sync
Part Status: Active
Power (Watts): 40 W
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.37 EUR
10+4.81 EUR
Mindestbestellmenge: 4
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DF450R12N2E4PB11BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE LOW POWER ECONO
Produkt ist nicht verfügbar
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DF600R12N2E4PB11BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE LOW POWER ECONO
Produkt ist nicht verfügbar
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FD16001200R17HP4KB2BOSA1 Infineon-FD1600_1200R17HP4-K_B2-DS-v03_01-EN.pdf?fileId=5546d462525dbac401527df348ad6a9e
FD16001200R17HP4KB2BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 1600A 1050W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Brake Chopper
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1600A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 1600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 130 nF @ 25 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+2183.72 EUR
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FF1200R17IP5BPSA1 Infineon-FF1200R17IP5-DS-v03_00-EN.pdf?fileId=5546d4625cc9456a015d07ef5df47f1e
FF1200R17IP5BPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 1200A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 68 nF @ 25 V
Produkt ist nicht verfügbar
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FF1800R12IE5BPSA1 Infineon-FF1800R12IE5-DS-v03_00-EN.pdf?fileId=5546d4625cc9456a015d07eef79f7f18
FF1800R12IE5BPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 1800A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1800A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 98.5 nF @ 25 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+1345.03 EUR
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BGSA12UGL8E6327XTSA1 Infineon-BGSA12UGL8-DataSheet-v02_03-EN.pdf?fileId=5546d46262b31d2e0162d8603afd75c5
BGSA12UGL8E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SPDT TSLP8-1
Packaging: Cut Tape (CT)
Package / Case: 8-XFLGA
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: CDMA, EDGE, LTE, W-CDMA
Voltage - Supply: 1.8V ~ 3.6V
P1dB: 11.2dBm
Supplier Device Package: PG-TSLP-8-1
Part Status: Active
auf Bestellung 29878 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.81 EUR
26+0.70 EUR
27+0.66 EUR
100+0.60 EUR
250+0.57 EUR
500+0.54 EUR
1000+0.52 EUR
5000+0.47 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
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