Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (149746) > Seite 334 nach 2496
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|   | IPP065N03LGXKSA1 | Infineon Technologies |  Description: MOSFET N-CH 30V 50A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V Power Dissipation (Max): 56W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TO220-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V | auf Bestellung 16000 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | CY23S08SXC-2 | Infineon Technologies |  Description: IC FANOUT BUFFER 16SOIC Packaging: Tube Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: LVCMOS Frequency - Max: 140MHz Type: Fanout Buffer (Distribution), Zero Delay Buffer Input: LVCMOS, LVTTL Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3V ~ 3.6V Ratio - Input:Output: 1:8 Differential - Input:Output: No/No Supplier Device Package: 16-SOIC PLL: Yes with Bypass Divider/Multiplier: Yes/No Part Status: Obsolete Number of Circuits: 1 DigiKey Programmable: Not Verified | auf Bestellung 4731 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | TLE4209AHKLA1 | Infineon Technologies |  Description: IC MOTOR DRIVER 8V-18V 8DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 800mA Interface: Parallel Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (2) Voltage - Supply: 8V ~ 18V Applications: General Purpose Technology: Bipolar Voltage - Load: 8V ~ 18V Supplier Device Package: PG-DIP-8 Motor Type - AC, DC: Servo DC Part Status: Obsolete | auf Bestellung 129373 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | CY7C1168V18-375BZXC | Infineon Technologies | Description: IC SRAM 18MBIT PAR 165FBGA Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, DDR II Clock Frequency: 375 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Part Status: Obsolete Memory Interface: Parallel Memory Organization: 1M x 18 DigiKey Programmable: Not Verified | auf Bestellung 236 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | BSC155N06NDATMA1 | Infineon Technologies |  Description: MOSFET 2N-CH 60V 20A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 50W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 30V Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: PG-TDSON-8-4 Part Status: Active | auf Bestellung 2253 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | EVAL3K3WTPPFCSICTOBO1 | Infineon Technologies |  Description: EVAL BOARD FOR 2EDF7275F Packaging: Box Function: Power Factor Correction Type: Power Management Utilized IC / Part: 2EDF7275F, IMZA65R048M1, IPW60R017C7, XMC1404 Supplied Contents: Board(s) Embedded: Yes, MCU, 32-Bit Part Status: Active Contents: Board(s) Secondary Attributes: Graphical User Interface (GUI) | auf Bestellung 2 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | EVALAUDIOMA12040TOBO1 | Infineon Technologies |  Description: EVAL_AUDIO_MA12040 | auf Bestellung 3 Stücke:Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|   | EVAL_TLE9180D-31QK | Infineon Technologies |  Description: EVALUATION BOARD FOR TLE9180D-31 Packaging: Box Function: Gate Driver Type: Power Management Utilized IC / Part: TLE9180D-31QK Supplied Contents: Board(s) | auf Bestellung 4 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | KIT6W18VP7950VTOBO1 | Infineon Technologies |  Description: IN POWER SUPPLIES THAT ARE USED Packaging: Box Voltage - Output: 18V Voltage - Input: 90V ~ 440V Current - Output: 500mA Regulator Topology: Flyback Board Type: Fully Populated Utilized IC / Part: ICE5QSAG, IPU95R3K7P7 Supplied Contents: Board(s) Main Purpose: DC/DC Converter Outputs and Type: 1 Isolated Output Part Status: Active Power - Output: 6 W Contents: Board(s) | auf Bestellung 1 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | KITXMC2GOXTRXMC1400TOBO1 | Infineon Technologies |  Description: XMC2GO XTREME XMC1400 Packaging: Box Mounting Type: Fixed Type: MCU 32-Bit Contents: Board(s) Core Processor: ARM® Cortex®-M0 Utilized IC / Part: XMC1404 Platform: XMC1400 XTREME Connectivity Part Status: Active | auf Bestellung 2 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | FS50R12W2T7B11BOMA1 | Infineon Technologies |  Description: IGBT MOD 1200V 50A Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Operating Temperature: -40°C ~ 175°C Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A (Typ) NTC Thermistor: No Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 7.9 µA Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|  | FS75R12W2T7B11BOMA1 | Infineon Technologies |  Description: IGBT MOD 1200V 75A Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Operating Temperature: -40°C ~ 175°C Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 75A (Typ) NTC Thermistor: No Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 65 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 13 µA Input Capacitance (Cies) @ Vce: 15.1 nF @ 25 V | auf Bestellung 29 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | 1EDN7550UXTSA1 | Infineon Technologies |  Description: IC GATE DRVR HIGH-SIDE 6XFDFN Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 20V Input Type: Non-Inverting Supplier Device Package: PG-TSNP-6-13 Rise / Fall Time (Typ): 6.5ns, 4.5ns Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: MOSFET (N-Channel, P-Channel) Current - Peak Output (Source, Sink): 4A, 8A Part Status: Active DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|   | KITACTBRD60R065S7TOBO1 | Infineon Technologies |  Description: ACTIVE BRIDGE BOARD 60R065S7 Packaging: Box Type: Power Management Supplied Contents: Board(s) Part Status: Active Contents: Board(s) | auf Bestellung 4 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | EVAL2K4WACTBRDS7TOBO1 | Infineon Technologies |  Description: EVAL_2K4W_ACT_BRD_S7 Packaging: Box Type: Power Management Supplied Contents: Board(s) Part Status: Active Contents: Board(s) | auf Bestellung 5 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | IR38060MBC01TRP | Infineon Technologies |  Description: IC REG BUCK ADJ 6A 35PQFN Packaging: Cut Tape (CT) Package / Case: 35-PowerVQFN Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 6A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 400kHz ~ 1.5MHz Voltage - Input (Max): 21V Topology: Buck Supplier Device Package: 35-PQFN (5x6) Synchronous Rectifier: Yes Voltage - Output (Max): 18.38V Voltage - Input (Min): 1.2V Voltage - Output (Min/Fixed): 0.5V Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|   | KIT40WAMPHATZWTOBO1 | Infineon Technologies |  Description: MERUS AUDIO AMP WIFI KIT Packaging: Box Function: Amplifier Type: Audio Contents: Board(s) Utilized IC / Part: MA12070P Platform: Raspberry Pi Part Status: Obsolete | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|   | IPB180P04P4L02ATMA2 | Infineon Technologies |  Description: MOSFET P-CH 40V 180A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 410µA Supplier Device Package: PG-TO263-7-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +5V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 286 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 18700 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 9000 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | IPP120P04P4L03AKSA2 | Infineon Technologies |  Description: MOSFET P-CH 40V 120A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 340µA Supplier Device Package: PG-TO220-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +5V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V Grade: Automotive Qualification: AEC-Q100 | auf Bestellung 181 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | TLF80511TFV50ATMA2 | Infineon Technologies |  Description: IC REG LIN 5V 400MA TO252-3-11 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 400mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 75 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PG-TO252-3-11 Voltage - Output (Min/Fixed): 5V Part Status: Active PSRR: 55dB (100Hz) Voltage Dropout (Max): 0.5V @ 250mA Protection Features: Over Current, Over Temperature, Short Circuit Current - Supply (Max): 80 µA Grade: Automotive Qualification: AEC-Q100 | auf Bestellung 4616 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | TLF80511TCATMA2 | Infineon Technologies |  Description: IC REG LIN 5V 400MA PG-TO263-3-1 Packaging: Cut Tape (CT) Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 400mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 75 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PG-TO263-3-1 Voltage - Output (Min/Fixed): 5V PSRR: 55dB (100Hz) Voltage Dropout (Max): 0.5V @ 250mA Protection Features: Over Current, Over Temperature, Short Circuit Current - Supply (Max): 80 µA Grade: Automotive Qualification: AEC-Q100 | auf Bestellung 2559 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | TLF80511TFV33ATMA2 | Infineon Technologies |  Description: IC REG LIN 3.3V 400MA TO252-3-11 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 400mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 75 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PG-TO252-3-11 Voltage - Output (Min/Fixed): 3.3V Grade: Automotive PSRR: 55dB (100Hz) Voltage Dropout (Max): 0.65V @ 250mA Protection Features: Over Current, Over Temperature, Short Circuit Current - Supply (Max): 80 µA Qualification: AEC-Q100 | auf Bestellung 2306 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | SLB9670VQ20FW785XTMA1 | Infineon Technologies |  Description: IC TPM VQFN Packaging: Tape & Reel (TR) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: SPI Operating Temperature: -20°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V Program Memory Type: NVM (6.8kB) Applications: Trusted Platform Module (TPM) Core Processor: 16-Bit Supplier Device Package: PG-VQFN-32-13 Part Status: Active Number of I/O: 1 DigiKey Programmable: Not Verified | auf Bestellung 15000 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | SLB9670VQ20FW785XTMA1 | Infineon Technologies |  Description: IC TPM VQFN Packaging: Cut Tape (CT) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: SPI Operating Temperature: -20°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V Program Memory Type: NVM (6.8kB) Applications: Trusted Platform Module (TPM) Core Processor: 16-Bit Supplier Device Package: PG-VQFN-32-13 Part Status: Active Number of I/O: 1 DigiKey Programmable: Not Verified | auf Bestellung 15243 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | IPI80N07S4-05 | Infineon Technologies |  Description: N-CHANNEL  POWER MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|   | BTS112AE3045ANTMA1 | Infineon Technologies |  Description: N-CHANNEL  POWER MOSFET Packaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 150Ohm @ 7.5A, 10V Power Dissipation (Max): 40W Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|   | BTS112A | Infineon Technologies |  Description: N-CHANNEL  POWER MOSFET Packaging: Bulk Part Status: Obsolete | auf Bestellung 3397 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | IPP029N06NAK5A1 | Infineon Technologies |  Description: N-CHANNEL  POWER MOSFET Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V Power Dissipation (Max): 3W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 75µA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|   | BTS117E3044A | Infineon Technologies |  Description: AUTOMOTIVELOW-SIDE SWITCH Packaging: Bulk Features: Auto Restart, Slew Rate Controlled Package / Case: TO-220-3 Output Type: N-Channel Mounting Type: Through Hole Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 80mOhm Input Type: Non-Inverting Voltage - Load: 60V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 3.5A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TO220-3-1 Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit Part Status: Obsolete | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|   | BTS133NKSA1 | Infineon Technologies |  Description: BUFFER/INVERTER PERIPHL DRIVER Packaging: Bulk Features: Slew Rate Controlled Package / Case: TO-220-3 Output Type: N-Channel Mounting Type: Through Hole Number of Outputs: 1 Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 40mOhm Input Type: Non-Inverting Voltage - Load: 60V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 7A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TO220-3-1 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|   | BTS117E3045A | Infineon Technologies |  Description: AUTOMOTIVELOW-SIDE SWITCH Packaging: Bulk Features: Auto Restart, Slew Rate Controlled Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 80mOhm Input Type: Non-Inverting Voltage - Load: 60V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 3.5A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TO220-3-5 Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit Part Status: Obsolete | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|  | BTS133E3064 | Infineon Technologies |  Description: AUTOMOTIVELOW-SIDE SWITCH Packaging: Bulk Features: Slew Rate Controlled Package / Case: TO-220-3 Output Type: N-Channel Mounting Type: Through Hole Number of Outputs: 1 Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 40mOhm Input Type: Non-Inverting Voltage - Load: 60V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 7A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TO220-3-1 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|  | BTS133E3064NK | Infineon Technologies |  Description: AUTOMOTIVELOW-SIDE SWITCH Packaging: Bulk Features: Slew Rate Controlled Package / Case: TO-220-3 Output Type: N-Channel Mounting Type: Through Hole Number of Outputs: 1 Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 40mOhm Input Type: Non-Inverting Voltage - Load: 60V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 7A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TO220-3-1 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|   | IPP085N06LGIN | Infineon Technologies |  Description: N-CHANNEL  POWER MOSFET Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 80A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 2V @ 125µA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|   | BTS441RS | Infineon Technologies |  Description: BUFFER/INVERTER PERIPHL DRIVER Packaging: Bulk Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|   | BTS441RSAKSA1 | Infineon Technologies | Description: BUFFER/INVERTER PERIPHL DRIVER Packaging: Bulk Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|   | BTS426L1E3062ANTMA1 | Infineon Technologies |  Description: AUTOMOTIVE HIGH SIDE SWITCH Packaging: Bulk Features: Auto Restart Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 50mOhm Input Type: Non-Inverting Voltage - Load: 5V ~ 34V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 5.8A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TO263-5-2 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|   | BTS5240G | Infineon Technologies |  Description: BUFFER/INVERTER PERIPHL DRIVER Packaging: Bulk Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|   | BBY53-05WE6327 | Infineon Technologies |  Description: VARIABLE CAPACITANCE DIODE | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|   | BCV26E6327 | Infineon Technologies |  Description: TRANS PNP DARL 30V 0.5A SOT23 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V Frequency - Transition: 200MHz Supplier Device Package: PG-SOT23 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 360 mW | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|   | BBY57-02VH6327 | Infineon Technologies |  Description: VARIABLE CAPACITANCE DIODE Packaging: Bulk Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Diode Type: Single Operating Temperature: -55°C ~ 125°C Capacitance @ Vr, F: 5.5pF @ 4V, 1MHz Capacitance Ratio Condition: C1/C4 Supplier Device Package: PG-SC79-2-1 Part Status: Active Voltage - Peak Reverse (Max): 10 V Capacitance Ratio: 3.7 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| BCW 60C E6327 | Infineon Technologies |  Description: TRANS NPN 32V 0.1A SOT23 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 330 mW | auf Bestellung 30000 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | IPP50CN10NGHKSA1 | Infineon Technologies |  Description: N-CHANNEL  POWER MOSFET | auf Bestellung 7500 Stücke:Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| BCV61CE6327 | Infineon Technologies | Description: TRANSISTORS FOR CURRENT MIRROR Packaging: Bulk Voltage - Rated: 30V Package / Case: TO-253-4, TO-253AA Current Rating (Amps): 100mA Mounting Type: Surface Mount Transistor Type: 2 NPN, Base Collector Junction Applications: Current Mirror Supplier Device Package: PG-SOT143-4 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
|   | IPP50R299CP | Infineon Technologies |  Description: N-CHANNEL POWER MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IFS150B12N3T4_B31 | Infineon Technologies |  Description: IGBT, 150A, 1200V, N-CHANNEL | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
|   | IPP50R199CPXK | Infineon Technologies |  Description: N-CHANNEL POWER MOSFET | auf Bestellung 217 Stücke:Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|   | BTS7710G | Infineon Technologies |  Description: IC HALF BRIDGE DRIVER 8A PDSO28 Packaging: Bulk Features: Slew Rate Controlled, Status Flag Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Interface: Logic Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (2) Voltage - Supply: 1.8V ~ 42V Rds On (Typ): 40mOhm LS, 70mOhm HS Applications: DC Motors, General Purpose Current - Output / Channel: 8A Current - Peak Output: 15A Technology: DMOS Voltage - Load: 1.8V ~ 42V Supplier Device Package: P-DSO-28 Fault Protection: Current Limiting, ESD, Open Load Detect, Over Temperature, Short Circuit, UVLO Load Type: Inductive Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|   | BCV62CE6327 | Infineon Technologies |  Description: TRANSISTORS FOR CURRENT MIRROR | auf Bestellung 4629 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | BCV26E327 | Infineon Technologies |  Description: TRANS PNP DARL 30V 0.5A SOT23 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V Frequency - Transition: 200MHz Supplier Device Package: PG-SOT23 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 360 mW | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|   | BBY5305WE6327 | Infineon Technologies |  Description: VARIABLE CAPACITANCE DIODE Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Diode Type: 1 Pair Common Cathode Operating Temperature: -55°C ~ 125°C (TJ) Capacitance @ Vr, F: 3.1pF @ 3V, 1MHz Capacitance Ratio Condition: C1/C3 Supplier Device Package: SOT-323 Voltage - Peak Reverse (Max): 6 V Capacitance Ratio: 2.6 | auf Bestellung 6719 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | BBY53-02VH6327 | Infineon Technologies |  Description: VARIABLE CAPACITANCE DIODE Packaging: Bulk Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Diode Type: Single Operating Temperature: -55°C ~ 125°C Capacitance @ Vr, F: 3.1pF @ 3V, 1MHz Capacitance Ratio Condition: C1/C3 Supplier Device Package: PG-SC79-2 Part Status: Active Voltage - Peak Reverse (Max): 6 V Capacitance Ratio: 2.2 | auf Bestellung 2325 Stücke:Lieferzeit 10-14 Tag (e) | 
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| BTS724NTMA1 | Infineon Technologies | Description: AUTOMOTIVE HIGH SIDE SWITCH Packaging: Bulk Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
|   | BBY53-05WH6327 | Infineon Technologies |  Description: VARIABLE CAPACITANCE DIODE | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|   | BC 849B E6327 | Infineon Technologies |  Description: BIPOLAR GEN PURPOSE TRANSISTOR | auf Bestellung 27000 Stücke:Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|   | IPP260N06N3G | Infineon Technologies |  Description: N-CHANNEL  POWER MOSFET Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 25.7mOhm @ 27A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 4V @ 11µA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|   | IPP60R520E6 | Infineon Technologies |  Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V Power Dissipation (Max): 66W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 230µA Supplier Device Package: PG-TO220-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|   | BC 858CE6327 | Infineon Technologies |  Description: TRANS PNP 30V 0.1A SOT23 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 330 mW | auf Bestellung 30000 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | BCW60BE6327 | Infineon Technologies |  Description: TRANS NPN 32V 0.1A PG-SOT23 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 330 mW | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|   | IPP60R600P7 | Infineon Technologies |  Description: N-CHANNEL POWER MOSFET Packaging: Bulk Part Status: Active | auf Bestellung 500 Stücke:Lieferzeit 10-14 Tag (e) | 
 | 
| IPP065N03LGXKSA1 |  | 
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
    Description: MOSFET N-CH 30V 50A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 609+ | 0.73 EUR | 
| CY23S08SXC-2 |  | 
Hersteller: Infineon Technologies
Description: IC FANOUT BUFFER 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 140MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:8
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
    Description: IC FANOUT BUFFER 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 140MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:8
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 4731 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 113+ | 4.68 EUR | 
| TLE4209AHKLA1 |  | 
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 8V-18V 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 8V ~ 18V
Applications: General Purpose
Technology: Bipolar
Voltage - Load: 8V ~ 18V
Supplier Device Package: PG-DIP-8
Motor Type - AC, DC: Servo DC
Part Status: Obsolete
    Description: IC MOTOR DRIVER 8V-18V 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 8V ~ 18V
Applications: General Purpose
Technology: Bipolar
Voltage - Load: 8V ~ 18V
Supplier Device Package: PG-DIP-8
Motor Type - AC, DC: Servo DC
Part Status: Obsolete
auf Bestellung 129373 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 205+ | 2.2 EUR | 
| CY7C1168V18-375BZXC | 
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 375 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
    Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 375 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
auf Bestellung 236 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 6+ | 97.56 EUR | 
| BSC155N06NDATMA1 |  | 
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 30V
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
    Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 30V
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
auf Bestellung 2253 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 7+ | 2.83 EUR | 
| 14+ | 1.31 EUR | 
| 100+ | 1.02 EUR | 
| 500+ | 0.95 EUR | 
| EVAL3K3WTPPFCSICTOBO1 |  | 
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR 2EDF7275F
Packaging: Box
Function: Power Factor Correction
Type: Power Management
Utilized IC / Part: 2EDF7275F, IMZA65R048M1, IPW60R017C7, XMC1404
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Part Status: Active
Contents: Board(s)
Secondary Attributes: Graphical User Interface (GUI)
    Description: EVAL BOARD FOR 2EDF7275F
Packaging: Box
Function: Power Factor Correction
Type: Power Management
Utilized IC / Part: 2EDF7275F, IMZA65R048M1, IPW60R017C7, XMC1404
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Part Status: Active
Contents: Board(s)
Secondary Attributes: Graphical User Interface (GUI)
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 1+ | 918.16 EUR | 
| EVALAUDIOMA12040TOBO1 |  | 
Hersteller: Infineon Technologies
Description: EVAL_AUDIO_MA12040
    Description: EVAL_AUDIO_MA12040
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| EVAL_TLE9180D-31QK |  | 
Hersteller: Infineon Technologies
Description: EVALUATION BOARD FOR TLE9180D-31
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: TLE9180D-31QK
Supplied Contents: Board(s)
    Description: EVALUATION BOARD FOR TLE9180D-31
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: TLE9180D-31QK
Supplied Contents: Board(s)
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 1+ | 1226.54 EUR | 
| KIT6W18VP7950VTOBO1 |  | 
Hersteller: Infineon Technologies
Description: IN POWER SUPPLIES THAT ARE USED
Packaging: Box
Voltage - Output: 18V
Voltage - Input: 90V ~ 440V
Current - Output: 500mA
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE5QSAG, IPU95R3K7P7
Supplied Contents: Board(s)
Main Purpose: DC/DC Converter
Outputs and Type: 1 Isolated Output
Part Status: Active
Power - Output: 6 W
Contents: Board(s)
    Description: IN POWER SUPPLIES THAT ARE USED
Packaging: Box
Voltage - Output: 18V
Voltage - Input: 90V ~ 440V
Current - Output: 500mA
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE5QSAG, IPU95R3K7P7
Supplied Contents: Board(s)
Main Purpose: DC/DC Converter
Outputs and Type: 1 Isolated Output
Part Status: Active
Power - Output: 6 W
Contents: Board(s)
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 1+ | 78.16 EUR | 
| KITXMC2GOXTRXMC1400TOBO1 |  | 
Hersteller: Infineon Technologies
Description: XMC2GO XTREME XMC1400
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M0
Utilized IC / Part: XMC1404
Platform: XMC1400 XTREME Connectivity
Part Status: Active
    Description: XMC2GO XTREME XMC1400
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M0
Utilized IC / Part: XMC1404
Platform: XMC1400 XTREME Connectivity
Part Status: Active
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 1+ | 67.97 EUR | 
| FS50R12W2T7B11BOMA1 |  | 
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 50A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 175°C
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A (Typ)
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 7.9 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
    Description: IGBT MOD 1200V 50A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 175°C
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A (Typ)
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 7.9 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| FS75R12W2T7B11BOMA1 |  | 
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 75A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 175°C
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 75A (Typ)
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 13 µA
Input Capacitance (Cies) @ Vce: 15.1 nF @ 25 V
    Description: IGBT MOD 1200V 75A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 175°C
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 75A (Typ)
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 13 µA
Input Capacitance (Cies) @ Vce: 15.1 nF @ 25 V
auf Bestellung 29 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 1+ | 85.76 EUR | 
| 15+ | 62.71 EUR | 
| 1EDN7550UXTSA1 |  | 
Hersteller: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 6XFDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSNP-6-13
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel, P-Channel)
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
    Description: IC GATE DRVR HIGH-SIDE 6XFDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSNP-6-13
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel, P-Channel)
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| KITACTBRD60R065S7TOBO1 |  | 
Hersteller: Infineon Technologies
Description: ACTIVE BRIDGE BOARD 60R065S7
Packaging: Box
Type: Power Management
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
    Description: ACTIVE BRIDGE BOARD 60R065S7
Packaging: Box
Type: Power Management
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 1+ | 88.65 EUR | 
| EVAL2K4WACTBRDS7TOBO1 |  | 
Hersteller: Infineon Technologies
Description: EVAL_2K4W_ACT_BRD_S7
Packaging: Box
Type: Power Management
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
    Description: EVAL_2K4W_ACT_BRD_S7
Packaging: Box
Type: Power Management
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 1+ | 823.05 EUR | 
| IR38060MBC01TRP |  | 
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 6A 35PQFN
Packaging: Cut Tape (CT)
Package / Case: 35-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 6A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 1.5MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: 35-PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.38V
Voltage - Input (Min): 1.2V
Voltage - Output (Min/Fixed): 0.5V
Part Status: Active
    Description: IC REG BUCK ADJ 6A 35PQFN
Packaging: Cut Tape (CT)
Package / Case: 35-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 6A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 1.5MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: 35-PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.38V
Voltage - Input (Min): 1.2V
Voltage - Output (Min/Fixed): 0.5V
Part Status: Active
Produkt ist nicht verfügbar
    Im Einkaufswagen
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| KIT40WAMPHATZWTOBO1 |  | 
Hersteller: Infineon Technologies
Description: MERUS AUDIO AMP WIFI KIT
Packaging: Box
Function: Amplifier
Type: Audio
Contents: Board(s)
Utilized IC / Part: MA12070P
Platform: Raspberry Pi
Part Status: Obsolete
    Description: MERUS AUDIO AMP WIFI KIT
Packaging: Box
Function: Amplifier
Type: Audio
Contents: Board(s)
Utilized IC / Part: MA12070P
Platform: Raspberry Pi
Part Status: Obsolete
Produkt ist nicht verfügbar
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| IPB180P04P4L02ATMA2 |  | 
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 410µA
Supplier Device Package: PG-TO263-7-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 286 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
    Description: MOSFET P-CH 40V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 410µA
Supplier Device Package: PG-TO263-7-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 286 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 1000+ | 2.26 EUR | 
| 2000+ | 2.24 EUR | 
| IPP120P04P4L03AKSA2 |  | 
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 340µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q100
    Description: MOSFET P-CH 40V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 340µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 181 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 3+ | 8.06 EUR | 
| 50+ | 4.17 EUR | 
| 100+ | 3.79 EUR | 
| TLF80511TFV50ATMA2 |  | 
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 400MA TO252-3-11
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3-11
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 55dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 80 µA
Grade: Automotive
Qualification: AEC-Q100
    Description: IC REG LIN 5V 400MA TO252-3-11
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3-11
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 55dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 80 µA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 4616 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 9+ | 2.09 EUR | 
| 12+ | 1.52 EUR | 
| 25+ | 1.38 EUR | 
| 100+ | 1.22 EUR | 
| 250+ | 1.15 EUR | 
| 500+ | 1.1 EUR | 
| 1000+ | 1.07 EUR | 
| TLF80511TCATMA2 |  | 
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 400MA PG-TO263-3-1
Packaging: Cut Tape (CT)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-3-1
Voltage - Output (Min/Fixed): 5V
PSRR: 55dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 80 µA
Grade: Automotive
Qualification: AEC-Q100
    Description: IC REG LIN 5V 400MA PG-TO263-3-1
Packaging: Cut Tape (CT)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-3-1
Voltage - Output (Min/Fixed): 5V
PSRR: 55dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 80 µA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2559 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 7+ | 2.85 EUR | 
| 10+ | 2.1 EUR | 
| 25+ | 1.91 EUR | 
| 100+ | 1.7 EUR | 
| 250+ | 1.6 EUR | 
| 500+ | 1.54 EUR | 
| TLF80511TFV33ATMA2 |  | 
Hersteller: Infineon Technologies
Description: IC REG LIN 3.3V 400MA TO252-3-11
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3-11
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
PSRR: 55dB (100Hz)
Voltage Dropout (Max): 0.65V @ 250mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 80 µA
Qualification: AEC-Q100
    Description: IC REG LIN 3.3V 400MA TO252-3-11
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3-11
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
PSRR: 55dB (100Hz)
Voltage Dropout (Max): 0.65V @ 250mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 80 µA
Qualification: AEC-Q100
auf Bestellung 2306 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 8+ | 2.22 EUR | 
| 11+ | 1.62 EUR | 
| 25+ | 1.47 EUR | 
| 100+ | 1.31 EUR | 
| 250+ | 1.23 EUR | 
| 500+ | 1.18 EUR | 
| 1000+ | 1.14 EUR | 
| SLB9670VQ20FW785XTMA1 |  | 
Hersteller: Infineon Technologies
Description: IC TPM VQFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Program Memory Type: NVM (6.8kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 16-Bit
Supplier Device Package: PG-VQFN-32-13
Part Status: Active
Number of I/O: 1
DigiKey Programmable: Not Verified
    Description: IC TPM VQFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Program Memory Type: NVM (6.8kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 16-Bit
Supplier Device Package: PG-VQFN-32-13
Part Status: Active
Number of I/O: 1
DigiKey Programmable: Not Verified
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 5000+ | 2.9 EUR | 
| SLB9670VQ20FW785XTMA1 |  | 
Hersteller: Infineon Technologies
Description: IC TPM VQFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Program Memory Type: NVM (6.8kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 16-Bit
Supplier Device Package: PG-VQFN-32-13
Part Status: Active
Number of I/O: 1
DigiKey Programmable: Not Verified
    Description: IC TPM VQFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Program Memory Type: NVM (6.8kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 16-Bit
Supplier Device Package: PG-VQFN-32-13
Part Status: Active
Number of I/O: 1
DigiKey Programmable: Not Verified
auf Bestellung 15243 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 4+ | 5.47 EUR | 
| 10+ | 4.13 EUR | 
| 25+ | 3.79 EUR | 
| 100+ | 3.42 EUR | 
| 250+ | 3.24 EUR | 
| 500+ | 3.14 EUR | 
| 1000+ | 3.05 EUR | 
| 2500+ | 2.96 EUR | 
| IPI80N07S4-05 |  | 
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
    Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| BTS112AE3045ANTMA1 |  | 
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 150Ohm @ 7.5A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
    Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 150Ohm @ 7.5A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| BTS112A |  | 
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Obsolete
    Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Obsolete
auf Bestellung 3397 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 125+ | 4.01 EUR | 
| IPP029N06NAK5A1 |  | 
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 75µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 30 V
    Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 75µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 30 V
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| BTS117E3044A |  | 
Hersteller: Infineon Technologies
Description: AUTOMOTIVELOW-SIDE SWITCH
Packaging: Bulk
Features: Auto Restart, Slew Rate Controlled
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3-1
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit
Part Status: Obsolete
    Description: AUTOMOTIVELOW-SIDE SWITCH
Packaging: Bulk
Features: Auto Restart, Slew Rate Controlled
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3-1
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit
Part Status: Obsolete
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| BTS133NKSA1 |  | 
Hersteller: Infineon Technologies
Description: BUFFER/INVERTER PERIPHL DRIVER
Packaging: Bulk
Features: Slew Rate Controlled
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3-1
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Part Status: Active
    Description: BUFFER/INVERTER PERIPHL DRIVER
Packaging: Bulk
Features: Slew Rate Controlled
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3-1
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Part Status: Active
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| BTS117E3045A |  | 
Hersteller: Infineon Technologies
Description: AUTOMOTIVELOW-SIDE SWITCH
Packaging: Bulk
Features: Auto Restart, Slew Rate Controlled
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3-5
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit
Part Status: Obsolete
    Description: AUTOMOTIVELOW-SIDE SWITCH
Packaging: Bulk
Features: Auto Restart, Slew Rate Controlled
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3-5
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit
Part Status: Obsolete
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| BTS133E3064 |  | 
Hersteller: Infineon Technologies
Description: AUTOMOTIVELOW-SIDE SWITCH
Packaging: Bulk
Features: Slew Rate Controlled
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3-1
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Part Status: Active
    Description: AUTOMOTIVELOW-SIDE SWITCH
Packaging: Bulk
Features: Slew Rate Controlled
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3-1
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Part Status: Active
Produkt ist nicht verfügbar
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     Stück im Wert von     UAH
| BTS133E3064NK |  | 
Hersteller: Infineon Technologies
Description: AUTOMOTIVELOW-SIDE SWITCH
Packaging: Bulk
Features: Slew Rate Controlled
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3-1
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Part Status: Active
    Description: AUTOMOTIVELOW-SIDE SWITCH
Packaging: Bulk
Features: Slew Rate Controlled
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 40mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3-1
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Part Status: Active
Produkt ist nicht verfügbar
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     Stück im Wert von     UAH
| IPP085N06LGIN |  | 
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 80A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 2V @ 125µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
    Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 80A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 2V @ 125µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
Produkt ist nicht verfügbar
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| BTS441RS |  | 
Hersteller: Infineon Technologies
Description: BUFFER/INVERTER PERIPHL DRIVER
Packaging: Bulk
Part Status: Active
    Description: BUFFER/INVERTER PERIPHL DRIVER
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
    Im Einkaufswagen
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| BTS441RSAKSA1 | 
Hersteller: Infineon Technologies
Description: BUFFER/INVERTER PERIPHL DRIVER
Packaging: Bulk
Part Status: Active
    Description: BUFFER/INVERTER PERIPHL DRIVER
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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| BTS426L1E3062ANTMA1 |  | 
Hersteller: Infineon Technologies
Description: AUTOMOTIVE HIGH SIDE SWITCH
Packaging: Bulk
Features: Auto Restart
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 5.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-5-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
    Description: AUTOMOTIVE HIGH SIDE SWITCH
Packaging: Bulk
Features: Auto Restart
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 5.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-5-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
Produkt ist nicht verfügbar
    Im Einkaufswagen
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| BTS5240G |  | 
Hersteller: Infineon Technologies
Description: BUFFER/INVERTER PERIPHL DRIVER
Packaging: Bulk
Part Status: Active
    Description: BUFFER/INVERTER PERIPHL DRIVER
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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| BBY53-05WE6327 |  | 
Hersteller: Infineon Technologies
Description: VARIABLE CAPACITANCE DIODE
    Description: VARIABLE CAPACITANCE DIODE
Produkt ist nicht verfügbar
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     Stück im Wert von     UAH
| BCV26E6327 |  | 
Hersteller: Infineon Technologies
Description: TRANS PNP DARL 30V 0.5A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 360 mW
    Description: TRANS PNP DARL 30V 0.5A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 360 mW
Produkt ist nicht verfügbar
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| BBY57-02VH6327 |  | 
Hersteller: Infineon Technologies
Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 5.5pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: PG-SC79-2-1
Part Status: Active
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 3.7
    Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 5.5pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: PG-SC79-2-1
Part Status: Active
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 3.7
Produkt ist nicht verfügbar
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| BCW 60C E6327 |  | 
Hersteller: Infineon Technologies
Description: TRANS NPN 32V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
    Description: TRANS NPN 32V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 7397+ | 0.07 EUR | 
| IPP50CN10NGHKSA1 |  | 
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
    Description: N-CHANNEL POWER MOSFET
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| BCV61CE6327 | 
Hersteller: Infineon Technologies
Description: TRANSISTORS FOR CURRENT MIRROR
Packaging: Bulk
Voltage - Rated: 30V
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 100mA
Mounting Type: Surface Mount
Transistor Type: 2 NPN, Base Collector Junction
Applications: Current Mirror
Supplier Device Package: PG-SOT143-4
    Description: TRANSISTORS FOR CURRENT MIRROR
Packaging: Bulk
Voltage - Rated: 30V
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 100mA
Mounting Type: Surface Mount
Transistor Type: 2 NPN, Base Collector Junction
Applications: Current Mirror
Supplier Device Package: PG-SOT143-4
Produkt ist nicht verfügbar
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| IPP50R299CP |  | 
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
    Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
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     Stück im Wert von     UAH
| IFS150B12N3T4_B31 |  | 
Hersteller: Infineon Technologies
Description: IGBT, 150A, 1200V, N-CHANNEL
    Description: IGBT, 150A, 1200V, N-CHANNEL
Produkt ist nicht verfügbar
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     Stück im Wert von     UAH
| IPP50R199CPXK |  | 
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
    Description: N-CHANNEL POWER MOSFET
auf Bestellung 217 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| BTS7710G |  | 
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 8A PDSO28
Packaging: Bulk
Features: Slew Rate Controlled, Status Flag
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 1.8V ~ 42V
Rds On (Typ): 40mOhm LS, 70mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 8A
Current - Peak Output: 15A
Technology: DMOS
Voltage - Load: 1.8V ~ 42V
Supplier Device Package: P-DSO-28
Fault Protection: Current Limiting, ESD, Open Load Detect, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Active
    Description: IC HALF BRIDGE DRIVER 8A PDSO28
Packaging: Bulk
Features: Slew Rate Controlled, Status Flag
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 1.8V ~ 42V
Rds On (Typ): 40mOhm LS, 70mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 8A
Current - Peak Output: 15A
Technology: DMOS
Voltage - Load: 1.8V ~ 42V
Supplier Device Package: P-DSO-28
Fault Protection: Current Limiting, ESD, Open Load Detect, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Active
Produkt ist nicht verfügbar
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| BCV62CE6327 |  | 
Hersteller: Infineon Technologies
Description: TRANSISTORS FOR CURRENT MIRROR
    Description: TRANSISTORS FOR CURRENT MIRROR
auf Bestellung 4629 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 3480+ | 0.15 EUR | 
| BCV26E327 |  | 
Hersteller: Infineon Technologies
Description: TRANS PNP DARL 30V 0.5A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 360 mW
    Description: TRANS PNP DARL 30V 0.5A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 360 mW
Produkt ist nicht verfügbar
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| BBY5305WE6327 |  | 
Hersteller: Infineon Technologies
Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Diode Type: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 3.1pF @ 3V, 1MHz
Capacitance Ratio Condition: C1/C3
Supplier Device Package: SOT-323
Voltage - Peak Reverse (Max): 6 V
Capacitance Ratio: 2.6
    Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Diode Type: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 3.1pF @ 3V, 1MHz
Capacitance Ratio Condition: C1/C3
Supplier Device Package: SOT-323
Voltage - Peak Reverse (Max): 6 V
Capacitance Ratio: 2.6
auf Bestellung 6719 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 2308+ | 0.2 EUR | 
| BBY53-02VH6327 |  | 
Hersteller: Infineon Technologies
Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 3.1pF @ 3V, 1MHz
Capacitance Ratio Condition: C1/C3
Supplier Device Package: PG-SC79-2
Part Status: Active
Voltage - Peak Reverse (Max): 6 V
Capacitance Ratio: 2.2
    Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 3.1pF @ 3V, 1MHz
Capacitance Ratio Condition: C1/C3
Supplier Device Package: PG-SC79-2
Part Status: Active
Voltage - Peak Reverse (Max): 6 V
Capacitance Ratio: 2.2
auf Bestellung 2325 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 2325+ | 0.23 EUR | 
| BTS724NTMA1 | 
Hersteller: Infineon Technologies
Description: AUTOMOTIVE HIGH SIDE SWITCH
Packaging: Bulk
Part Status: Active
    Description: AUTOMOTIVE HIGH SIDE SWITCH
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| BBY53-05WH6327 |  | 
Hersteller: Infineon Technologies
Description: VARIABLE CAPACITANCE DIODE
    Description: VARIABLE CAPACITANCE DIODE
Produkt ist nicht verfügbar
    Im Einkaufswagen
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| BC 849B E6327 |  | 
Hersteller: Infineon Technologies
Description: BIPOLAR GEN PURPOSE TRANSISTOR
    Description: BIPOLAR GEN PURPOSE TRANSISTOR
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| IPP260N06N3G |  | 
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 25.7mOhm @ 27A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 11µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
    Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 25.7mOhm @ 27A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 11µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
Produkt ist nicht verfügbar
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| IPP60R520E6 |  | 
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 230µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V
    Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 230µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V
Produkt ist nicht verfügbar
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| BC 858CE6327 |  | 
Hersteller: Infineon Technologies
Description: TRANS PNP 30V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
    Description: TRANS PNP 30V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 8460+ | 0.07 EUR | 
| BCW60BE6327 |  | 
Hersteller: Infineon Technologies
Description: TRANS NPN 32V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
    Description: TRANS NPN 32V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
Produkt ist nicht verfügbar
    Im Einkaufswagen
     Stück im Wert von     UAH
| IPP60R600P7 |  | 
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
    Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis | 
|---|---|
| 367+ | 1.44 EUR |