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SPB03N60C3 SPB03N60C3 Infineon Technologies Infineon-SPB03N60C3-DS-v02_05-en.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
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BCP69-25E6327 BCP69-25E6327 Infineon Technologies INFNS12748-1.pdf?t.download=true&u=5oefqw Description: TRANS 20V 1A PG-SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
Qualification: AEC-Q101
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BSP613PL6327 Infineon Technologies Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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SPU03N60S5IN SPU03N60S5IN Infineon Technologies Infineon-SPD_U03N60S5-DS-v02_05-en[1].pdf?fileId=db3a304412b407950112b42c8ab0471f Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
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BSP75-E6433 BSP75-E6433 Infineon Technologies Description: BUFFER/INVERTER PERIPHL DRIVER
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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BSS119L6433 BSS119L6433 Infineon Technologies INFNS17504-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 78 pF @ 25 V
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BSP373L6327 BSP373L6327 Infineon Technologies INFNS16746-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.7A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
Produkt ist nicht verfügbar
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SPI12N50C3IN SPI12N50C3IN Infineon Technologies Infineon-SPP_I_A12N50C3-DS-v03_01-en.pdf?fileId=db3a3043163797a6011637ecbecd0079 Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
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SAK-TC1797-512F180EXAC SAK-TC1797-512F180EXAC Infineon Technologies TC1797_DS_V1%203.pdf?fileId=db3a30431ed1d7b2011efeaa4ad16b6d Description: 32-BIT RISC FLASH MCU
Packaging: Bulk
Package / Case: 416-BGA
Mounting Type: Surface Mount
Speed: 180MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 224K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 48x10b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.42V ~ 1.58V
Connectivity: ASC, CANbus, EBI/EMI, FlexRay, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-BGA-416-27
Part Status: Active
Number of I/O: 221
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BAT64-04B5000 BAT64-04B5000 Infineon Technologies INFNS09506-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOTT 40V SOT23-3-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 120mA
Supplier Device Package: PG-SOT23-3-3
Operating Temperature - Junction: 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Qualification: AEC-Q101
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BSP52E6327HTSA1 Infineon Technologies INFNS10800-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN DARL 80V 1A SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Produkt ist nicht verfügbar
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BAW56WE6327 BAW56WE6327 Infineon Technologies INFNS11183-1.pdf?t.download=true&u=5oefqw Description: HIGH SPEED SWITCHING DIODE
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BAW56W-E6327 BAW56W-E6327 Infineon Technologies INFNS11183-1.pdf?t.download=true&u=5oefqw Description: HIGH SPEED SWITCHING DIODE
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BSS119N H7796 Infineon Technologies INFNS19097-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 13µA
Supplier Device Package: PG-SOT23-3-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20.9 pF @ 25 V
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SPP15N65C3XKSA1 SPP15N65C3XKSA1 Infineon Technologies INFNS11588-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 9.4A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 675µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
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TLE4931CNHAMA1 Infineon Technologies Description: MAGNETIC SWITCH SPEED SENSOR
Packaging: Bulk
Produkt ist nicht verfügbar
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ESD205-B1-02ELSE6327 ESD205-B1-02ELSE6327 Infineon Technologies INFN-S-A0000192796-1.pdf?t.download=true&u=5oefqw Description: TRANS VOLTAGE SUPPRESSOR DIODE
Packaging: Bulk
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-TSSLP-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power - Peak Pulse: 30W
Power Line Protection: No
Part Status: Active
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SPW11N60CFD SPW11N60CFD Infineon Technologies Infineon-SPW11N60CFD-DS-v02_00-en.pdf?fileId=db3a304412b407950112b42e5f1849b3 Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 500µA
Supplier Device Package: PG-TO247-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
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BSS119NH7978XTSA1 BSS119NH7978XTSA1 Infineon Technologies INFNS19097-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 13µA
Supplier Device Package: PG-SOT23-3-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20.9 pF @ 25 V
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2597+0.19 EUR
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BAT64-04WE6327 BAT64-04WE6327 Infineon Technologies INFNS11551-1.pdf?t.download=true&u=5oefqw Description: RECTIFIER DIODE, SCHOTTKY
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 120mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
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BAT64-06B5003 BAT64-06B5003 Infineon Technologies INFNS09506-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOTT 40V SOT23-3-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120mA
Supplier Device Package: PG-SOT23-3-3
Operating Temperature - Junction: 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Qualification: AEC-Q101
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10377+0.051 EUR
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SPS04N60C3AKMA1 SPS04N60C3AKMA1 Infineon Technologies Infineon-SPS04N60C3-DS-v02_02-en.pdf?fileId=db3a304340e762c80140f2fb153d5c27 Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 101415 Stücke:
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487+0.93 EUR
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TLE5009E1000FUMA TLE5009E1000FUMA Infineon Technologies Description: MAGNETIC SWITCH ANGLE SENSOR
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 3V ~ 3.6V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-DSO-8-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Part Status: Active
Produkt ist nicht verfügbar
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BAT64-05WH6327 BAT64-05WH6327 Infineon Technologies INFNS11551-1.pdf?t.download=true&u=5oefqw Description: RECTIFIER DIODE, SCHOTTKY
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120mA
Supplier Device Package: PG-SOT323-3
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Produkt ist nicht verfügbar
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BSS64E6327 BSS64E6327 Infineon Technologies SIEMD095-881.pdf?t.download=true&u=5oefqw Description: TRANS NPN 80V 0.8A SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 400µA, 4mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 330 mW
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8485+0.06 EUR
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IPI22N03S4L-15 IPI22N03S4L-15 Infineon Technologies INFNS10907-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 14.9mOhm @ 22A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V
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BSS223PWL6327 BSS223PWL6327 Infineon Technologies INFNS10365-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL P-CHANNEL MOSFET
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 390mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 390mA, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1.5µA
Supplier Device Package: PG-SOT323-3-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.62 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 15 V
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BCR48PNH6327 BCR48PNH6327 Infineon Technologies Infineon-BCR48PN-DS-v01_01-en.pdf?fileId=db3a30431428a3730114406c1ce60300 Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Frequency - Transition: 100MHz
Resistor - Base (R1): 47kOhms, 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: PG-SOT363-6-1
Part Status: Active
Produkt ist nicht verfügbar
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BSS119NH7796 BSS119NH7796 Infineon Technologies INFNS19097-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 13µA
Supplier Device Package: PG-SOT23-3-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20.9 pF @ 25 V
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SGW30N60HS SGW30N60HS Infineon Technologies INFNS14176-1.pdf?t.download=true&u=5oefqw description Description: IGBT, 41A, 600V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 20ns/250ns
Switching Energy: 1.15mJ
Test Condition: 400V, 30A, 11Ohm, 15V
Gate Charge: 141 nC
Part Status: Active
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 112 A
Power - Max: 250 W
Produkt ist nicht verfügbar
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SGW50N60HS Infineon Technologies Description: IGBT, 100A, 600V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 47ns/310ns
Switching Energy: 1.96mJ
Test Condition: 400V, 50A, 6.8Ohm, 15V
Gate Charge: 179 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 416 W
Produkt ist nicht verfügbar
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SAF-C164CI-8E25MDM Infineon Technologies INFNS03050-1.pdf?t.download=true&u=5oefqw Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 25MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: OTP
Core Processor: C166
Data Converters: A/D 8x10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Number of I/O: 59
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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PEF2015TV1.2 PEF2015TV1.2 Infineon Technologies PEF2015.pdf?t.download=true&u=ovmfp3 Description: ISDN CONTROLLER 8192KBPS 5V
Packaging: Bulk
Part Status: Active
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SAF-C164CI-8EM SAF-C164CI-8EM Infineon Technologies INFNS03050-1.pdf?t.download=true&u=5oefqw Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: OTP
Core Processor: C166
Data Converters: A/D 8x10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Part Status: Active
Number of I/O: 59
DigiKey Programmable: Not Verified
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SAF-TC1130-L150EB-GBB-G SAF-TC1130-L150EB-GBB-G Infineon Technologies RE_DSHEET_TC1130_REI.pdf?u=5oefqw Description: 32-BIT RISC FLASH MCU
Packaging: Bulk
Package / Case: 208-LBGA
Mounting Type: Surface Mount
Speed: 150MHz
RAM Size: 124K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: TriCore™
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.43V ~ 1.58V, 3.14V ~ 3.47V
Connectivity: CANbus, EBI/EMI, FIFO, I2C, IrDA, SPI, USB
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: P-LBGA-208-2
Part Status: Active
Number of I/O: 72
DigiKey Programmable: Not Verified
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SPA07N60C2 SPA07N60C2 Infineon Technologies spp_b_a07n60c21.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 350µA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 25 V
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SPA08N50C3 SPA08N50C3 Infineon Technologies INFNS14195-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
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TC1797384F150EACKXUMA2 TC1797384F150EACKXUMA2 Infineon Technologies INFNS16628-1.pdf?t.download=true&u=5oefqw Description: 32-BIT RISC FLASH MCU
Packaging: Bulk
Package / Case: 416-BBGA
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 3MB (3M x 8)
RAM Size: 176K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 48x10b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.42V ~ 1.58V
Connectivity: ASC, CANbus, EBI/EMI, FlexRay, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-BGA-416-10
Part Status: Active
Number of I/O: 221
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SKB15N60E8151 SKB15N60E8151 Infineon Technologies INFNS11148-1.pdf?t.download=true&u=5oefqw Description: IGBT NPT 600V 31A TO263-3-2
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 279 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Td (on/off) @ 25°C: 32ns/234ns
Switching Energy: 570µJ
Test Condition: 400V, 15A, 21Ohm, 15V
Gate Charge: 76 nC
Part Status: Active
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 62 A
Power - Max: 139 W
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SPD03N60S5 SPD03N60S5 Infineon Technologies Infineon-SPD_U03N60S5-DS-v02_05-en1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 135µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
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SPD04N60C2 SPD04N60C2 Infineon Technologies spd_u04n60c2.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 200µA
Supplier Device Package: PG-TO252-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V
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SMBTA42E6327 SMBTA42E6327 Infineon Technologies INFNS10711-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 70MHz
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 360 mW
Produkt ist nicht verfügbar
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TLE4226G TLE4226G Infineon Technologies tle4226g.pdf?t.download=true&u=5oefqw Description: BUFFER/INVERTER PERIPHL DRIVER
Packaging: Bulk
Part Status: Active
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SPI07N65C3IN Infineon Technologies INFNS14202-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
Produkt ist nicht verfügbar
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SAK-TC1797-384F150EAC SAK-TC1797-384F150EAC Infineon Technologies INFNS30466-1.pdf?t.download=true&u=5oefqw Description: 32-BIT RISC FLASH MCU
Packaging: Bulk
Package / Case: 416-BBGA
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 3MB (3M x 8)
RAM Size: 176K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 48x10b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.42V ~ 1.58V
Connectivity: ASC, CANbus, EBI/EMI, FlexRay, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-BGA-416-10
Part Status: Active
Number of I/O: 221
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SPP11N65C3 Infineon Technologies Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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IDH15S120A Infineon Technologies INFNS16654-1.pdf?t.download=true&u=5oefqw Description: DIODE SIL CARB 1.2KV 15A TO220-2
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 750pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 360 µA @ 1.2 V
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SAK-TC1797-512F180EAC SAK-TC1797-512F180EAC Infineon Technologies INFNS16628-1.pdf?t.download=true&u=5oefqw Description: IC MCU 32BIT 4MB FLASH 416BGA
Packaging: Bulk
Package / Case: 416-BBGA
Mounting Type: Surface Mount
Speed: 180MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 224K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: TriCore™
Data Converters: A/D 48x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.42V ~ 1.58V
Connectivity: ASC, CANbus, EBI/EMI, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-BGA-416-10
Number of I/O: 219
DigiKey Programmable: Not Verified
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TDA7255VXUMA1 TDA7255VXUMA1 Infineon Technologies Infineon-TDA7255V-DS-v01_01-EN.pdf?t.download=true&u=5oefqw Description: IC RF TXRX ISM<1GHZ 40VQFN
Packaging: Bulk
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -115dBm
Mounting Type: Surface Mount
Frequency: 433MHz ~ 435MHz
Type: TxRx Only
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.1V ~ 5.5V
Power - Output: 13dBm
Current - Receiving: 8.6mA ~ 9.1mA
Data Rate (Max): 100kbps
Current - Transmitting: 5mA ~ 18.3mA
Supplier Device Package: PG-VQFN-40-8
Modulation: ASK, FSK
RF Family/Standard: General ISM < 1GHz
Serial Interfaces: I2C, SPI
Part Status: Active
DigiKey Programmable: Not Verified
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SPP24N60CFD SPP24N60CFD Infineon Technologies Infineon-SPP24N60C3-DS-v02_05-en.pdf?fileId=db3a304412b407950112b42e323b4975 Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.7A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 15.4A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.2mA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3160 pF @ 25 V
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SPU03N60S5 Infineon Technologies Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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SPW12N50C3XK SPW12N50C3XK Infineon Technologies Infineon-SPW12N50C3-DS-v02_05-en.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO247-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Produkt ist nicht verfügbar
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SAK-TC1197-512F180EAC SAK-TC1197-512F180EAC Infineon Technologies INFNS14223-1.pdf?t.download=true&u=5oefqw Description: IC MCU 32BIT 4MB FLASH 416BGA
Packaging: Bulk
Package / Case: 416-BBGA
Mounting Type: Surface Mount
Speed: 180MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 224K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Data Converters: A/D 48x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.42V ~ 1.58V
Connectivity: ASC, CANbus, EBI/EMI, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-BGA-416-10
Number of I/O: 219
DigiKey Programmable: Not Verified
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SPS04N60C3 SPS04N60C3 Infineon Technologies INFNS27829-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Supplier Device Package: PG-TO251
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
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TLE5027C-IE6747 Infineon Technologies Description: MAGNETIC SWITCH SPEED SENSOR
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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TLE5009E2000FUMA TLE5009E2000FUMA Infineon Technologies Description: MAGNETIC SWITCH ANGLE SENSOR
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-DSO-8-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Part Status: Active
Produkt ist nicht verfügbar
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TDK5110GEG TDK5110GEG Infineon Technologies Description: ASK/FSK TRANSMITTE 868/433 MHZ
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BSP373E6327 BSP373E6327 Infineon Technologies INFNS08240-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.7A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
Produkt ist nicht verfügbar
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XCM1100-T038F0064AA XCM1100-T038F0064AA Infineon Technologies Infineon-xmc1100_AB-DS-v01_07-EN.pdf?fileId=5546d4624a0bf290014a4bdaff9325bd Description: 32-BIT MCU XMC1000 ARM CORTEX-M0
auf Bestellung 2478 Stücke:
Lieferzeit 10-14 Tag (e)
289+1.91 EUR
Mindestbestellmenge: 289
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IPI034NE7N3G IPI034NE7N3G Infineon Technologies INFN-S-A0001299349-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 155µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8130 pF @ 37.5 V
auf Bestellung 234 Stücke:
Lieferzeit 10-14 Tag (e)
234+2.35 EUR
Mindestbestellmenge: 234
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SPB03N60C3 Infineon-SPB03N60C3-DS-v02_05-en.pdf?t.download=true&u=5oefqw
SPB03N60C3
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
auf Bestellung 8154 Stücke:
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Anzahl Preis
630+0.77 EUR
Mindestbestellmenge: 630
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BCP69-25E6327 INFNS12748-1.pdf?t.download=true&u=5oefqw
BCP69-25E6327
Hersteller: Infineon Technologies
Description: TRANS 20V 1A PG-SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1181+0.38 EUR
Mindestbestellmenge: 1181
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BSP613PL6327
Hersteller: Infineon Technologies
Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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SPU03N60S5IN Infineon-SPD_U03N60S5-DS-v02_05-en[1].pdf?fileId=db3a304412b407950112b42c8ab0471f
SPU03N60S5IN
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 1217 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
594+0.82 EUR
Mindestbestellmenge: 594
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BSP75-E6433
BSP75-E6433
Hersteller: Infineon Technologies
Description: BUFFER/INVERTER PERIPHL DRIVER
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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BSS119L6433 INFNS17504-1.pdf?t.download=true&u=5oefqw
BSS119L6433
Hersteller: Infineon Technologies
Description: SMALL SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 78 pF @ 25 V
auf Bestellung 86725 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2358+0.2 EUR
Mindestbestellmenge: 2358
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BSP373L6327 INFNS16746-1.pdf?t.download=true&u=5oefqw
BSP373L6327
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.7A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
Produkt ist nicht verfügbar
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SPI12N50C3IN Infineon-SPP_I_A12N50C3-DS-v03_01-en.pdf?fileId=db3a3043163797a6011637ecbecd0079
SPI12N50C3IN
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 928 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
182+2.51 EUR
Mindestbestellmenge: 182
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SAK-TC1797-512F180EXAC TC1797_DS_V1%203.pdf?fileId=db3a30431ed1d7b2011efeaa4ad16b6d
SAK-TC1797-512F180EXAC
Hersteller: Infineon Technologies
Description: 32-BIT RISC FLASH MCU
Packaging: Bulk
Package / Case: 416-BGA
Mounting Type: Surface Mount
Speed: 180MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 224K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 48x10b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.42V ~ 1.58V
Connectivity: ASC, CANbus, EBI/EMI, FlexRay, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-BGA-416-27
Part Status: Active
Number of I/O: 221
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BAT64-04B5000 INFNS09506-1.pdf?t.download=true&u=5oefqw
BAT64-04B5000
Hersteller: Infineon Technologies
Description: DIODE ARR SCHOTT 40V SOT23-3-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 120mA
Supplier Device Package: PG-SOT23-3-3
Operating Temperature - Junction: 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Qualification: AEC-Q101
auf Bestellung 81516 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7059+0.06 EUR
Mindestbestellmenge: 7059
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BSP52E6327HTSA1 INFNS10800-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: TRANS NPN DARL 80V 1A SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Produkt ist nicht verfügbar
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BAW56WE6327 INFNS11183-1.pdf?t.download=true&u=5oefqw
BAW56WE6327
Hersteller: Infineon Technologies
Description: HIGH SPEED SWITCHING DIODE
Produkt ist nicht verfügbar
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BAW56W-E6327 INFNS11183-1.pdf?t.download=true&u=5oefqw
BAW56W-E6327
Hersteller: Infineon Technologies
Description: HIGH SPEED SWITCHING DIODE
Produkt ist nicht verfügbar
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BSS119N H7796 INFNS19097-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: SMALL SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 13µA
Supplier Device Package: PG-SOT23-3-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20.9 pF @ 25 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6918+0.07 EUR
Mindestbestellmenge: 6918
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SPP15N65C3XKSA1 INFNS11588-1.pdf?t.download=true&u=5oefqw
SPP15N65C3XKSA1
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 9.4A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 675µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
auf Bestellung 6300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
146+3.12 EUR
Mindestbestellmenge: 146
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TLE4931CNHAMA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH SPEED SENSOR
Packaging: Bulk
Produkt ist nicht verfügbar
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ESD205-B1-02ELSE6327 INFN-S-A0000192796-1.pdf?t.download=true&u=5oefqw
ESD205-B1-02ELSE6327
Hersteller: Infineon Technologies
Description: TRANS VOLTAGE SUPPRESSOR DIODE
Packaging: Bulk
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-TSSLP-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power - Peak Pulse: 30W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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SPW11N60CFD Infineon-SPW11N60CFD-DS-v02_00-en.pdf?fileId=db3a304412b407950112b42e5f1849b3
SPW11N60CFD
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 500µA
Supplier Device Package: PG-TO247-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 391 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
159+3.03 EUR
Mindestbestellmenge: 159
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BSS119NH7978XTSA1 INFNS19097-1.pdf?t.download=true&u=5oefqw
BSS119NH7978XTSA1
Hersteller: Infineon Technologies
Description: SMALL SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 13µA
Supplier Device Package: PG-SOT23-3-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20.9 pF @ 25 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2597+0.19 EUR
Mindestbestellmenge: 2597
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BAT64-04WE6327 INFNS11551-1.pdf?t.download=true&u=5oefqw
BAT64-04WE6327
Hersteller: Infineon Technologies
Description: RECTIFIER DIODE, SCHOTTKY
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 120mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Produkt ist nicht verfügbar
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BAT64-06B5003 INFNS09506-1.pdf?t.download=true&u=5oefqw
BAT64-06B5003
Hersteller: Infineon Technologies
Description: DIODE ARR SCHOTT 40V SOT23-3-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120mA
Supplier Device Package: PG-SOT23-3-3
Operating Temperature - Junction: 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Qualification: AEC-Q101
auf Bestellung 57000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10377+0.051 EUR
Mindestbestellmenge: 10377
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SPS04N60C3AKMA1 Infineon-SPS04N60C3-DS-v02_02-en.pdf?fileId=db3a304340e762c80140f2fb153d5c27
SPS04N60C3AKMA1
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 101415 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
487+0.93 EUR
Mindestbestellmenge: 487
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TLE5009E1000FUMA
TLE5009E1000FUMA
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH ANGLE SENSOR
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 3V ~ 3.6V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-DSO-8-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Part Status: Active
Produkt ist nicht verfügbar
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BAT64-05WH6327 INFNS11551-1.pdf?t.download=true&u=5oefqw
BAT64-05WH6327
Hersteller: Infineon Technologies
Description: RECTIFIER DIODE, SCHOTTKY
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120mA
Supplier Device Package: PG-SOT323-3
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Produkt ist nicht verfügbar
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BSS64E6327 SIEMD095-881.pdf?t.download=true&u=5oefqw
BSS64E6327
Hersteller: Infineon Technologies
Description: TRANS NPN 80V 0.8A SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 400µA, 4mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 330 mW
auf Bestellung 114000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8485+0.06 EUR
Mindestbestellmenge: 8485
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IPI22N03S4L-15 INFNS10907-1.pdf?t.download=true&u=5oefqw
IPI22N03S4L-15
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 14.9mOhm @ 22A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V
Produkt ist nicht verfügbar
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BSS223PWL6327 INFNS10365-1.pdf?t.download=true&u=5oefqw
BSS223PWL6327
Hersteller: Infineon Technologies
Description: SMALL SIGNAL P-CHANNEL MOSFET
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 390mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 390mA, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1.5µA
Supplier Device Package: PG-SOT323-3-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.62 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 15 V
Produkt ist nicht verfügbar
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BCR48PNH6327 Infineon-BCR48PN-DS-v01_01-en.pdf?fileId=db3a30431428a3730114406c1ce60300
BCR48PNH6327
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Frequency - Transition: 100MHz
Resistor - Base (R1): 47kOhms, 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: PG-SOT363-6-1
Part Status: Active
Produkt ist nicht verfügbar
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BSS119NH7796 INFNS19097-1.pdf?t.download=true&u=5oefqw
BSS119NH7796
Hersteller: Infineon Technologies
Description: SMALL SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 13µA
Supplier Device Package: PG-SOT23-3-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20.9 pF @ 25 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6918+0.064 EUR
Mindestbestellmenge: 6918
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SGW30N60HS description INFNS14176-1.pdf?t.download=true&u=5oefqw
SGW30N60HS
Hersteller: Infineon Technologies
Description: IGBT, 41A, 600V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 20ns/250ns
Switching Energy: 1.15mJ
Test Condition: 400V, 30A, 11Ohm, 15V
Gate Charge: 141 nC
Part Status: Active
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 112 A
Power - Max: 250 W
Produkt ist nicht verfügbar
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SGW50N60HS
Hersteller: Infineon Technologies
Description: IGBT, 100A, 600V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 47ns/310ns
Switching Energy: 1.96mJ
Test Condition: 400V, 50A, 6.8Ohm, 15V
Gate Charge: 179 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 416 W
Produkt ist nicht verfügbar
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SAF-C164CI-8E25MDM INFNS03050-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 25MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: OTP
Core Processor: C166
Data Converters: A/D 8x10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Number of I/O: 59
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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PEF2015TV1.2 PEF2015.pdf?t.download=true&u=ovmfp3
PEF2015TV1.2
Hersteller: Infineon Technologies
Description: ISDN CONTROLLER 8192KBPS 5V
Packaging: Bulk
Part Status: Active
auf Bestellung 8150 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
66+6.86 EUR
Mindestbestellmenge: 66
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SAF-C164CI-8EM INFNS03050-1.pdf?t.download=true&u=5oefqw
SAF-C164CI-8EM
Hersteller: Infineon Technologies
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: OTP
Core Processor: C166
Data Converters: A/D 8x10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Part Status: Active
Number of I/O: 59
DigiKey Programmable: Not Verified
auf Bestellung 860 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+97.66 EUR
Mindestbestellmenge: 5
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SAF-TC1130-L150EB-GBB-G RE_DSHEET_TC1130_REI.pdf?u=5oefqw
SAF-TC1130-L150EB-GBB-G
Hersteller: Infineon Technologies
Description: 32-BIT RISC FLASH MCU
Packaging: Bulk
Package / Case: 208-LBGA
Mounting Type: Surface Mount
Speed: 150MHz
RAM Size: 124K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: TriCore™
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.43V ~ 1.58V, 3.14V ~ 3.47V
Connectivity: CANbus, EBI/EMI, FIFO, I2C, IrDA, SPI, USB
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: P-LBGA-208-2
Part Status: Active
Number of I/O: 72
DigiKey Programmable: Not Verified
auf Bestellung 1497 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+98.87 EUR
Mindestbestellmenge: 5
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SPA07N60C2 spp_b_a07n60c21.pdf?t.download=true&u=5oefqw
SPA07N60C2
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 350µA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 25 V
auf Bestellung 1403 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
337+1.35 EUR
Mindestbestellmenge: 337
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SPA08N50C3 INFNS14195-1.pdf?t.download=true&u=5oefqw
SPA08N50C3
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
auf Bestellung 720 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
371+1.35 EUR
Mindestbestellmenge: 371
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TC1797384F150EACKXUMA2 INFNS16628-1.pdf?t.download=true&u=5oefqw
TC1797384F150EACKXUMA2
Hersteller: Infineon Technologies
Description: 32-BIT RISC FLASH MCU
Packaging: Bulk
Package / Case: 416-BBGA
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 3MB (3M x 8)
RAM Size: 176K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 48x10b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.42V ~ 1.58V
Connectivity: ASC, CANbus, EBI/EMI, FlexRay, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-BGA-416-10
Part Status: Active
Number of I/O: 221
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SKB15N60E8151 INFNS11148-1.pdf?t.download=true&u=5oefqw
SKB15N60E8151
Hersteller: Infineon Technologies
Description: IGBT NPT 600V 31A TO263-3-2
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 279 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Td (on/off) @ 25°C: 32ns/234ns
Switching Energy: 570µJ
Test Condition: 400V, 15A, 21Ohm, 15V
Gate Charge: 76 nC
Part Status: Active
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 62 A
Power - Max: 139 W
auf Bestellung 1288 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
179+2.55 EUR
Mindestbestellmenge: 179
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SPD03N60S5 Infineon-SPD_U03N60S5-DS-v02_05-en1.pdf?t.download=true&u=5oefqw
SPD03N60S5
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 135µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
auf Bestellung 11175 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
562+0.85 EUR
Mindestbestellmenge: 562
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SPD04N60C2 spd_u04n60c2.pdf?t.download=true&u=5oefqw
SPD04N60C2
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 200µA
Supplier Device Package: PG-TO252-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V
auf Bestellung 45850 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
567+0.81 EUR
Mindestbestellmenge: 567
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SMBTA42E6327 INFNS10711-1.pdf?t.download=true&u=5oefqw
SMBTA42E6327
Hersteller: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 70MHz
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 360 mW
Produkt ist nicht verfügbar
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TLE4226G tle4226g.pdf?t.download=true&u=5oefqw
TLE4226G
Hersteller: Infineon Technologies
Description: BUFFER/INVERTER PERIPHL DRIVER
Packaging: Bulk
Part Status: Active
auf Bestellung 1430 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
189+2.68 EUR
Mindestbestellmenge: 189
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SPI07N65C3IN INFNS14202-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
Produkt ist nicht verfügbar
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SAK-TC1797-384F150EAC INFNS30466-1.pdf?t.download=true&u=5oefqw
SAK-TC1797-384F150EAC
Hersteller: Infineon Technologies
Description: 32-BIT RISC FLASH MCU
Packaging: Bulk
Package / Case: 416-BBGA
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 3MB (3M x 8)
RAM Size: 176K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 48x10b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.42V ~ 1.58V
Connectivity: ASC, CANbus, EBI/EMI, FlexRay, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-BGA-416-10
Part Status: Active
Number of I/O: 221
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SPP11N65C3
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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IDH15S120A INFNS16654-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 1.2KV 15A TO220-2
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 750pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 360 µA @ 1.2 V
auf Bestellung 176 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
37+14.36 EUR
Mindestbestellmenge: 37
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SAK-TC1797-512F180EAC INFNS16628-1.pdf?t.download=true&u=5oefqw
SAK-TC1797-512F180EAC
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 416BGA
Packaging: Bulk
Package / Case: 416-BBGA
Mounting Type: Surface Mount
Speed: 180MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 224K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: TriCore™
Data Converters: A/D 48x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.42V ~ 1.58V
Connectivity: ASC, CANbus, EBI/EMI, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-BGA-416-10
Number of I/O: 219
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TDA7255VXUMA1 Infineon-TDA7255V-DS-v01_01-EN.pdf?t.download=true&u=5oefqw
TDA7255VXUMA1
Hersteller: Infineon Technologies
Description: IC RF TXRX ISM<1GHZ 40VQFN
Packaging: Bulk
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -115dBm
Mounting Type: Surface Mount
Frequency: 433MHz ~ 435MHz
Type: TxRx Only
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.1V ~ 5.5V
Power - Output: 13dBm
Current - Receiving: 8.6mA ~ 9.1mA
Data Rate (Max): 100kbps
Current - Transmitting: 5mA ~ 18.3mA
Supplier Device Package: PG-VQFN-40-8
Modulation: ASK, FSK
RF Family/Standard: General ISM < 1GHz
Serial Interfaces: I2C, SPI
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 27903 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
161+2.83 EUR
Mindestbestellmenge: 161
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SPP24N60CFD Infineon-SPP24N60C3-DS-v02_05-en.pdf?fileId=db3a304412b407950112b42e323b4975
SPP24N60CFD
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.7A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 15.4A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.2mA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3160 pF @ 25 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
109+4.18 EUR
Mindestbestellmenge: 109
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SPU03N60S5
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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SPW12N50C3XK Infineon-SPW12N50C3-DS-v02_05-en.pdf?t.download=true&u=5oefqw
SPW12N50C3XK
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO247-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Produkt ist nicht verfügbar
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SAK-TC1197-512F180EAC INFNS14223-1.pdf?t.download=true&u=5oefqw
SAK-TC1197-512F180EAC
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 416BGA
Packaging: Bulk
Package / Case: 416-BBGA
Mounting Type: Surface Mount
Speed: 180MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 224K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Data Converters: A/D 48x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.42V ~ 1.58V
Connectivity: ASC, CANbus, EBI/EMI, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-BGA-416-10
Number of I/O: 219
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SPS04N60C3 INFNS27829-1.pdf?t.download=true&u=5oefqw
SPS04N60C3
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Supplier Device Package: PG-TO251
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
auf Bestellung 76415 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
594+0.82 EUR
Mindestbestellmenge: 594
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TLE5027C-IE6747
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH SPEED SENSOR
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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TLE5009E2000FUMA
TLE5009E2000FUMA
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH ANGLE SENSOR
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-DSO-8-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Part Status: Active
Produkt ist nicht verfügbar
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TDK5110GEG
TDK5110GEG
Hersteller: Infineon Technologies
Description: ASK/FSK TRANSMITTE 868/433 MHZ
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BSP373E6327 INFNS08240-1.pdf?t.download=true&u=5oefqw
BSP373E6327
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.7A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
Produkt ist nicht verfügbar
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XCM1100-T038F0064AA Infineon-xmc1100_AB-DS-v01_07-EN.pdf?fileId=5546d4624a0bf290014a4bdaff9325bd
XCM1100-T038F0064AA
Hersteller: Infineon Technologies
Description: 32-BIT MCU XMC1000 ARM CORTEX-M0
auf Bestellung 2478 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
289+1.91 EUR
Mindestbestellmenge: 289
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IPI034NE7N3G INFN-S-A0001299349-1.pdf?t.download=true&u=5oefqw
IPI034NE7N3G
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 155µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8130 pF @ 37.5 V
auf Bestellung 234 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
234+2.35 EUR
Mindestbestellmenge: 234
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