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BSP60E6327 BSP60E6327 Infineon Technologies INFNS17369-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP DARL 45V 1A SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4-21
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.5 W
auf Bestellung 24430 Stücke:
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2077+0.24 EUR
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BSP603S2LNT BSP603S2LNT Infineon Technologies INFNS12252-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-SOT223-4-21
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 29683 Stücke:
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852+0.53 EUR
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BSP60H6327XTSA1 BSP60H6327XTSA1 Infineon Technologies bsp60_bsp61_bsp62.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445e1c2e7018a Description: TRANS PNP DARL 45V 1A SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.5 W
auf Bestellung 5000 Stücke:
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2049+0.25 EUR
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BSP 60 E6433 BSP 60 E6433 Infineon Technologies bsp60_bsp61_bsp62.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445e1c2e7018a Description: TRANS PNP DARL 45V 1A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.5 W
Produkt ist nicht verfügbar
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BSP61E6327HTSA1 BSP61E6327HTSA1 Infineon Technologies bsp60_bsp61_bsp62.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445e1c2e7018a Description: TRANS PNP DARL 60V 1A SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
auf Bestellung 43880 Stücke:
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2129+0.22 EUR
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BSP61E6327 BSP61E6327 Infineon Technologies INFNS10837-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
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1598+0.32 EUR
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BFR 360L3E6765 Infineon Technologies INFNS10726-1.pdf?t.download=true&u=5oefqw Description: LOW-NOISE TRANSISTOR
Packaging: Bulk
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 16dB
Power - Max: 210mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 1.8GHz ~ 3GHz
Supplier Device Package: PG-TSLP-3-1
Part Status: Active
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3073+0.18 EUR
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BFR360L3E6765 BFR360L3E6765 Infineon Technologies INFNS10726-1.pdf?t.download=true&u=5oefqw Description: LOW-NOISE SI TRANSISTOR
Packaging: Bulk
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 11.5dB ~ 16dB
Power - Max: 210mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 9V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 1.8GHz ~ 3GHz
Supplier Device Package: PG-TSLP-3-1
Part Status: Active
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3073+0.18 EUR
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TC336LP32F200SAAKXUMA1 Infineon Technologies Infineon-TriCore_Family_BR-ProductBrochure-v01_00-EN.pdf?fileId=5546d4625d5945ed015dc81f47b436c7 Description: AURIX 2G
Produkt ist nicht verfügbar
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IRLML6402TRPBF-1 Infineon Technologies IRLML6402PbF-1_10-28-14.pdf Description: MOSFET P-CH 20V 3.7A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.7A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 633 pF @ 10 V
Produkt ist nicht verfügbar
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6MS24017E33W31361NOSA1 6MS24017E33W31361NOSA1 Infineon Technologies Description: IGBT MODULE 1700V A-MS3-1
Produkt ist nicht verfügbar
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BAT18-05E6327 Infineon Technologies INFNS15701-1.pdf?t.download=true&u=5oefqw Description: PIN DIODE, 35V V(BR)
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Resistance @ If, F: 700mOhm @ 5mA, 200MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 100 mA
Produkt ist nicht verfügbar
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BAT1805E6327HTSA1 BAT1805E6327HTSA1 Infineon Technologies INFNS15701-1.pdf?t.download=true&u=5oefqw Description: RF DIODE 35V PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Resistance @ If, F: 700mOhm @ 5mA, 200MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 100 mA
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1181+0.38 EUR
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BAT1805E6327 Infineon Technologies INFNS15701-1.pdf?t.download=true&u=5oefqw Description: PIN DIODE, 35V V(BR)
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 120 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 20 nA @ 20 V
Produkt ist nicht verfügbar
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IPZ60R037P7XKSA1 IPZ60R037P7XKSA1 Infineon Technologies Description: MOSFET N-CH 650V 76A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 29.5A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.48mA
Supplier Device Package: PG-TO247-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5243 pF @ 400 V
auf Bestellung 938 Stücke:
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53+9.59 EUR
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IPZ60R041P6FKSA1 IPZ60R041P6FKSA1 Infineon Technologies Infineon-IPZ60R041P6-DS-v02_00-EN.pdf?fileId=5546d4624e765da5014ee36a7dc20200 Description: MOSFET N-CH 600V 77.5A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77.5A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 35.5A, 10V
Power Dissipation (Max): 481W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.96mA
Supplier Device Package: PG-TO247-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 100 V
auf Bestellung 13435 Stücke:
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45+11.03 EUR
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CY7C1412AV18-200BZC CY7C1412AV18-200BZC Infineon Technologies CY7C1425AV18%2C%20CY7C141%280%2C2%2C4%29AV18_8.pdf Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
auf Bestellung 717 Stücke:
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7+72.89 EUR
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CY7C1415BV18-200BZXC CY7C1415BV18-200BZXC Infineon Technologies CY7C1411%2C13%2C15%2C26BV18.pdf Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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7+72.89 EUR
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CY7C1412BV18-167BZC CY7C1412BV18-167BZC Infineon Technologies CY7C141%282%2C4%29BV18_RevE.pdf Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
auf Bestellung 273 Stücke:
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7+73.93 EUR
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DT430N22KOFHPSA1 Infineon Technologies Description: SCR MODULE PB60-1
Packaging: Tray
Part Status: Obsolete
Produkt ist nicht verfügbar
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IPP042N03L G Infineon Technologies INFNS16316-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
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TLE4276DVNTMA1 TLE4276DVNTMA1 Infineon Technologies Infineon-TLE4276-DS-v02_80-EN.pdf?fileId=5546d4626102d35a01612c4b988a6576 Description: IC REG LINEAR ADJ LDO REGULATOR
Packaging: Bulk
Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-5-1
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 2.5V
Control Features: Inhibit
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Antisaturation, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 25 mA
Produkt ist nicht verfügbar
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IRFI4905 IRFI4905 Infineon Technologies irfi4905.pdf Description: MOSFET P-CH 55V 41A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 22A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB Full-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Produkt ist nicht verfügbar
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IRFC4905B Infineon Technologies Description: MOSFET 55V 42A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 42A
Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V
Supplier Device Package: Die
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 55 V
Produkt ist nicht verfügbar
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IR3889MTRPBFAUMA1 IR3889MTRPBFAUMA1 Infineon Technologies Infineon-IR3889MTRPBF-DataSheet-v02_03-EN.pdf?fileId=5546d4626b2d8e69016b6c1a8ae45608 Description: IC REG BUCK ADJ 30A IQFN-36
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 30A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-36-2
Synchronous Rectifier: Yes
Voltage - Output (Max): 17V
Voltage - Input (Min): 2V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
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IR3889MTRPBFAUMA1 IR3889MTRPBFAUMA1 Infineon Technologies Infineon-IR3889MTRPBF-DataSheet-v02_03-EN.pdf?fileId=5546d4626b2d8e69016b6c1a8ae45608 Description: IC REG BUCK ADJ 30A IQFN-36
Packaging: Cut Tape (CT)
Package / Case: 36-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 30A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-36-2
Synchronous Rectifier: Yes
Voltage - Output (Max): 17V
Voltage - Input (Min): 2V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
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IPN80R2K0P7ATMA1 IPN80R2K0P7ATMA1 Infineon Technologies Infineon-IPN80R2K0P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cf45567426201 Description: MOSFET N-CHANNEL 800V 3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 940mA, 10V
Power Dissipation (Max): 6.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 500 V
auf Bestellung 3000 Stücke:
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3000+0.54 EUR
Mindestbestellmenge: 3000
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IPN80R2K0P7ATMA1 IPN80R2K0P7ATMA1 Infineon Technologies Infineon-IPN80R2K0P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cf45567426201 Description: MOSFET N-CHANNEL 800V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 940mA, 10V
Power Dissipation (Max): 6.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 500 V
auf Bestellung 3000 Stücke:
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10+1.92 EUR
14+1.33 EUR
100+0.88 EUR
500+0.68 EUR
1000+0.62 EUR
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BGA612H6327 BGA612H6327 Infineon Technologies INFNS16400-1.pdf?t.download=true&u=5oefqw Description: IC AMP 802.15 500MHZ-6GHZ SOT343
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 500MHz ~ 6GHz
RF Type: 802.15/Bluetooth, ISM, WLAN, GSM, GPS, DCS, UMTS
Voltage - Supply: 2.75V
Gain: 15dB
Current - Supply: 10mA
Noise Figure: 1dB
P1dB: -16.5dBm
Test Frequency: 1.575GHz
Supplier Device Package: PG-SOT343-4
Part Status: Active
Produkt ist nicht verfügbar
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2EDL05I06PFXUMA1 2EDL05I06PFXUMA1 Infineon Technologies Infineon-2EDL05x06xx-DS-v02_05-EN.pdf?fileId=db3a30433e30e4bf013e3c649ffd6c8b Description: IC GATE DRVR HALF-BRIDGE DSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 48ns, 24ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 500mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
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2EDL05I06PFXUMA1 2EDL05I06PFXUMA1 Infineon Technologies Infineon-2EDL05x06xx-DS-v02_05-EN.pdf?fileId=db3a30433e30e4bf013e3c649ffd6c8b Description: IC GATE DRVR HALF-BRIDGE DSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 48ns, 24ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 500mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
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SAF-C505CA-LMCA SAF-C505CA-LMCA Infineon Technologies INFNS04968-1.pdf?t.download=true&u=5oefqw Description: IC MCU 8BIT ROMLESS 44MQFP
Packaging: Bulk
Package / Case: 44-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 1.25K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C500
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V
Connectivity: CANbus, EBI/EMI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-44-2
Part Status: Active
Number of I/O: 34
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SAFC505CALMCA SAFC505CALMCA Infineon Technologies INFNS04968-1.pdf?t.download=true&u=5oefqw Description: IC MCU 8BIT ROMLESS 44MQFP
Packaging: Bulk
Package / Case: 44-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 1.25K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C500
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V
Connectivity: CANbus, EBI/EMI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-44-2
Part Status: Active
Number of I/O: 34
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TC264D40F200NBCKXUMA2 TC264D40F200NBCKXUMA2 Infineon Technologies Infineon-TC26xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b40169538e06030445 Description: IC MCU 32BIT 2.5MB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2.5MB (2.5M x 8)
RAM Size: 240K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: TriCore™
Data Converters: A/D 48x12b SAR, 3 x Sigma-Delta
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LQFP-144-22
Part Status: Active
Number of I/O: 88
DigiKey Programmable: Not Verified
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TC264D40F200NBCKXUMA2 TC264D40F200NBCKXUMA2 Infineon Technologies Infineon-TC26xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b40169538e06030445 Description: IC MCU 32BIT 2.5MB FLASH 144LQFP
Packaging: Cut Tape (CT)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2.5MB (2.5M x 8)
RAM Size: 240K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: TriCore™
Data Converters: A/D 48x12b SAR, 3 x Sigma-Delta
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LQFP-144-22
Part Status: Active
Number of I/O: 88
DigiKey Programmable: Not Verified
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10+27.58 EUR
25+25.88 EUR
100+24 EUR
250+23.11 EUR
500+22.57 EUR
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ITS436L2SHKSA1 ITS436L2SHKSA1 Infineon Technologies INFNS09387-1.pdf?t.download=true&u=5oefqw Description: BUFFER/INVERTER PERIPHL DRIVER
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BTS430K2E3122A BTS430K2E3122A Infineon Technologies INFNS20608-1.pdf?t.download=true&u=5oefqw Description: BUFFER/INVERTER PERIPHL DRIVER
Packaging: Bulk
Features: Auto Restart, Slew Rate Controlled
Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 30mOhm
Input Type: Non-Inverting
Voltage - Load: 4.5V ~ 32V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 36A
Ratio - Input:Output: 1:1
Supplier Device Package: P-TO220-5-122
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
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BTS436L2GNTMA1 BTS436L2GNTMA1 Infineon Technologies INFNS05499-1.pdf?t.download=true&u=5oefqw Description: BUFFER/INVERTER PERIPHL DRIVER
Packaging: Bulk
Features: Slew Rate Controlled
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 35mOhm
Input Type: Non-Inverting
Voltage - Load: 4.75V ~ 41V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 9.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-5-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Load, Over Temperature, Over Voltage, Short Circuit, UVLO
Part Status: Active
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BFR182E-6327 BFR182E-6327 Infineon Technologies INFNS10845-1.pdf?t.download=true&u=5oefqw Description: RF N-CHANNEL MOSFET
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2EDF9275FXUMA1 2EDF9275FXUMA1 Infineon Technologies Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057 Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
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2EDF9275FXUMA1 2EDF9275FXUMA1 Infineon Technologies Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057 Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
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25+3.21 EUR
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FS200R12PT4BOSA1 FS200R12PT4BOSA1 Infineon Technologies Infineon-FS200R12PT4-DS-v02_02-en_de.pdf?fileId=db3a30432239cccd01230df5d3f555e9 Description: IGBT MOD 1200V 280A 1000W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 280 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1000 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
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12+222.49 EUR
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BTS611L1E3128ANTMA1 BTS611L1E3128ANTMA1 Infineon Technologies INFNS05471-1.pdf?t.download=true&u=5oefqw Description: 2 CH HIGH-SIDE POWER SWITCH
Packaging: Bulk
Features: Auto Restart, Slew Rate Controlled
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 160mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.4A
Ratio - Input:Output: 1:1
Supplier Device Package: P-TO263-7-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Short Circuit, UVLO
Part Status: Active
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BSC0910NDIATMA1 BSC0910NDIATMA1 Infineon Technologies Infineon-BSC0910NDI-DS-v02_00-en.pdf?fileId=db3a304336ca04c90136cedc08b64926 Description: MOSFET 2N-CH 25V 11A/31A TISON8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 11A, 31A
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 12V
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
Part Status: Active
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BSC0910NDIATMA1 BSC0910NDIATMA1 Infineon Technologies Infineon-BSC0910NDI-DS-v02_00-en.pdf?fileId=db3a304336ca04c90136cedc08b64926 Description: MOSFET 2N-CH 25V 11A/31A TISON8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 11A, 31A
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 12V
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
Part Status: Active
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BSP372NH6327XTSA1 BSP372NH6327XTSA1 Infineon Technologies BSP372N_rev2+0.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30433dd58def013dd8e68ae413f6 Description: MOSFET N-CH 100V 1.8A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 1.8A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 218µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 329 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BCR196WH6327XTSA1 BCR196WH6327XTSA1 Infineon Technologies bcr196series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301144048156b02db Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Resistors Included: R1 and R2
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BCR196E6327HTSA1 BCR196E6327HTSA1 Infineon Technologies bcr196series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301144048156b02db Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Resistors Included: R1 and R2
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BB831E7904HTSA1 BB831E7904HTSA1 Infineon Technologies BB831.pdf Description: DIODE VAR CAP 30V 20MA SOD-323
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 1.2pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SOD323-3D
Part Status: Obsolete
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 9.5
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BB831E7904 BB831E7904 Infineon Technologies INFNS11653-1.pdf?t.download=true&u=5oefqw Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 1.2pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SOD323-2
Part Status: Active
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 9.5
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BTS730CT BTS730CT Infineon Technologies INFNS12421-1.pdf?t.download=true&u=5oefqw Description: FLUORESCENT LIGHT CONTROLLER
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BTS730NT Infineon Technologies Description: IC PWR PWM N-CH 1:1 DSO-20
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XMC1404F064X0200AAXUMA1 XMC1404F064X0200AAXUMA1 Infineon Technologies Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: IC MCU 32BIT 200KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-26
Part Status: Active
Number of I/O: 48
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IAUZ20N08S5L300ATMA1 IAUZ20N08S5L300ATMA1 Infineon Technologies Infineon-IAUZ20N08S5L300-DataSheet-v01_00-EN.pdf?fileId=5546d4626f1cf1c5016f1e6316a2012e Description: MOSFET N-CH 80V 20A 8TSDSON-32
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 8µA
Supplier Device Package: PG-TSDSON-8-32
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 599 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.42 EUR
Mindestbestellmenge: 5000
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IAUZ20N08S5L300ATMA1 IAUZ20N08S5L300ATMA1 Infineon Technologies Infineon-IAUZ20N08S5L300-DataSheet-v01_00-EN.pdf?fileId=5546d4626f1cf1c5016f1e6316a2012e Description: MOSFET N-CH 80V 20A 8TSDSON-32
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 8µA
Supplier Device Package: PG-TSDSON-8-32
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 599 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5603 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.8 EUR
16+1.13 EUR
100+0.74 EUR
500+0.58 EUR
1000+0.52 EUR
2000+0.48 EUR
Mindestbestellmenge: 10
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IRF7805ZTRPBF-1 IRF7805ZTRPBF-1 Infineon Technologies IRF7805ZPbF-1_11-20-13.pdf Description: MOSFET N-CH 30V 16A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 16A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 15 V
Produkt ist nicht verfügbar
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SAK-C167CR-L33MTR Infineon Technologies Description: LEGACY 16-BIT MCU
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IR38165MTRPBFAUMA1 IR38165MTRPBFAUMA1 Infineon Technologies Infineon-IR38163M%20IR38165M%20IR38363M%20IR38365M%20Datasheet-DS-v03_20-EN.pdf?fileId=5546d4625b62cd8a015bcf81f1526e4c Description: IC REG BUCK ADJ 30A 24PQFN
Packaging: Tape & Reel (TR)
Package / Case: 24-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 30A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 150kHz ~ 1.5MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: 24-PQFN (5x7)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.5V
Part Status: Active
Produkt ist nicht verfügbar
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IR38165MTRPBFAUMA1 IR38165MTRPBFAUMA1 Infineon Technologies Infineon-IR38163M%20IR38165M%20IR38363M%20IR38365M%20Datasheet-DS-v03_20-EN.pdf?fileId=5546d4625b62cd8a015bcf81f1526e4c Description: IC REG BUCK ADJ 30A 24PQFN
Packaging: Cut Tape (CT)
Package / Case: 24-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 30A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 150kHz ~ 1.5MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: 24-PQFN (5x7)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.5V
Part Status: Active
Produkt ist nicht verfügbar
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DEMO-PTOOL-300W-M DEMO-PTOOL-300W-M Infineon Technologies Infineon-DEMO-PTOOL-300W-M%20User%20Guide-UM-v01_01-EN.pdf?fileId=5546d4625cc9456a015ce51926c20951 Description: EVAL POWER TOOL
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
auf Bestellung 3 Stücke:
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1+149.09 EUR
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BSP60E6327 INFNS17369-1.pdf?t.download=true&u=5oefqw
BSP60E6327
Hersteller: Infineon Technologies
Description: TRANS PNP DARL 45V 1A SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4-21
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.5 W
auf Bestellung 24430 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2077+0.24 EUR
Mindestbestellmenge: 2077
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BSP603S2LNT INFNS12252-1.pdf?t.download=true&u=5oefqw
BSP603S2LNT
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-SOT223-4-21
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 29683 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
852+0.53 EUR
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BSP60H6327XTSA1 bsp60_bsp61_bsp62.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445e1c2e7018a
BSP60H6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS PNP DARL 45V 1A SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.5 W
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2049+0.25 EUR
Mindestbestellmenge: 2049
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BSP 60 E6433 bsp60_bsp61_bsp62.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445e1c2e7018a
BSP 60 E6433
Hersteller: Infineon Technologies
Description: TRANS PNP DARL 45V 1A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.5 W
Produkt ist nicht verfügbar
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BSP61E6327HTSA1 bsp60_bsp61_bsp62.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445e1c2e7018a
BSP61E6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS PNP DARL 60V 1A SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
auf Bestellung 43880 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2129+0.22 EUR
Mindestbestellmenge: 2129
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BSP61E6327 INFNS10837-1.pdf?t.download=true&u=5oefqw
BSP61E6327
Hersteller: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1598+0.32 EUR
Mindestbestellmenge: 1598
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BFR 360L3E6765 INFNS10726-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: LOW-NOISE TRANSISTOR
Packaging: Bulk
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 16dB
Power - Max: 210mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 1.8GHz ~ 3GHz
Supplier Device Package: PG-TSLP-3-1
Part Status: Active
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3073+0.18 EUR
Mindestbestellmenge: 3073
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BFR360L3E6765 INFNS10726-1.pdf?t.download=true&u=5oefqw
BFR360L3E6765
Hersteller: Infineon Technologies
Description: LOW-NOISE SI TRANSISTOR
Packaging: Bulk
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 11.5dB ~ 16dB
Power - Max: 210mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 9V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 1.8GHz ~ 3GHz
Supplier Device Package: PG-TSLP-3-1
Part Status: Active
auf Bestellung 41726 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3073+0.18 EUR
Mindestbestellmenge: 3073
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TC336LP32F200SAAKXUMA1 Infineon-TriCore_Family_BR-ProductBrochure-v01_00-EN.pdf?fileId=5546d4625d5945ed015dc81f47b436c7
Hersteller: Infineon Technologies
Description: AURIX 2G
Produkt ist nicht verfügbar
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IRLML6402TRPBF-1 IRLML6402PbF-1_10-28-14.pdf
Hersteller: Infineon Technologies
Description: MOSFET P-CH 20V 3.7A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.7A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 633 pF @ 10 V
Produkt ist nicht verfügbar
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6MS24017E33W31361NOSA1
6MS24017E33W31361NOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V A-MS3-1
Produkt ist nicht verfügbar
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BAT18-05E6327 INFNS15701-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: PIN DIODE, 35V V(BR)
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Resistance @ If, F: 700mOhm @ 5mA, 200MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 100 mA
Produkt ist nicht verfügbar
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BAT1805E6327HTSA1 INFNS15701-1.pdf?t.download=true&u=5oefqw
BAT1805E6327HTSA1
Hersteller: Infineon Technologies
Description: RF DIODE 35V PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Resistance @ If, F: 700mOhm @ 5mA, 200MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 100 mA
auf Bestellung 47248 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1181+0.38 EUR
Mindestbestellmenge: 1181
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BAT1805E6327 INFNS15701-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: PIN DIODE, 35V V(BR)
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 120 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 20 nA @ 20 V
Produkt ist nicht verfügbar
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IPZ60R037P7XKSA1
IPZ60R037P7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 76A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 29.5A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.48mA
Supplier Device Package: PG-TO247-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5243 pF @ 400 V
auf Bestellung 938 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+9.59 EUR
Mindestbestellmenge: 53
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IPZ60R041P6FKSA1 Infineon-IPZ60R041P6-DS-v02_00-EN.pdf?fileId=5546d4624e765da5014ee36a7dc20200
IPZ60R041P6FKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 77.5A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77.5A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 35.5A, 10V
Power Dissipation (Max): 481W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.96mA
Supplier Device Package: PG-TO247-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 100 V
auf Bestellung 13435 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
45+11.03 EUR
Mindestbestellmenge: 45
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CY7C1412AV18-200BZC CY7C1425AV18%2C%20CY7C141%280%2C2%2C4%29AV18_8.pdf
CY7C1412AV18-200BZC
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
auf Bestellung 717 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+72.89 EUR
Mindestbestellmenge: 7
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CY7C1415BV18-200BZXC CY7C1411%2C13%2C15%2C26BV18.pdf
CY7C1415BV18-200BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
auf Bestellung 467 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+72.89 EUR
Mindestbestellmenge: 7
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CY7C1412BV18-167BZC CY7C141%282%2C4%29BV18_RevE.pdf
CY7C1412BV18-167BZC
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
auf Bestellung 273 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+73.93 EUR
Mindestbestellmenge: 7
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DT430N22KOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE PB60-1
Packaging: Tray
Part Status: Obsolete
Produkt ist nicht verfügbar
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IPP042N03L G INFNS16316-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
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TLE4276DVNTMA1 Infineon-TLE4276-DS-v02_80-EN.pdf?fileId=5546d4626102d35a01612c4b988a6576
TLE4276DVNTMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR ADJ LDO REGULATOR
Packaging: Bulk
Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-5-1
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 2.5V
Control Features: Inhibit
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Antisaturation, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 25 mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFI4905 irfi4905.pdf
IRFI4905
Hersteller: Infineon Technologies
Description: MOSFET P-CH 55V 41A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 22A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB Full-Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Produkt ist nicht verfügbar
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IRFC4905B
Hersteller: Infineon Technologies
Description: MOSFET 55V 42A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 42A
Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V
Supplier Device Package: Die
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 55 V
Produkt ist nicht verfügbar
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IR3889MTRPBFAUMA1 Infineon-IR3889MTRPBF-DataSheet-v02_03-EN.pdf?fileId=5546d4626b2d8e69016b6c1a8ae45608
IR3889MTRPBFAUMA1
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 30A IQFN-36
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 30A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-36-2
Synchronous Rectifier: Yes
Voltage - Output (Max): 17V
Voltage - Input (Min): 2V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
Produkt ist nicht verfügbar
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IR3889MTRPBFAUMA1 Infineon-IR3889MTRPBF-DataSheet-v02_03-EN.pdf?fileId=5546d4626b2d8e69016b6c1a8ae45608
IR3889MTRPBFAUMA1
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 30A IQFN-36
Packaging: Cut Tape (CT)
Package / Case: 36-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 30A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-36-2
Synchronous Rectifier: Yes
Voltage - Output (Max): 17V
Voltage - Input (Min): 2V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPN80R2K0P7ATMA1 Infineon-IPN80R2K0P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cf45567426201
IPN80R2K0P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CHANNEL 800V 3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 940mA, 10V
Power Dissipation (Max): 6.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 500 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.54 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
IPN80R2K0P7ATMA1 Infineon-IPN80R2K0P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cf45567426201
IPN80R2K0P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CHANNEL 800V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 940mA, 10V
Power Dissipation (Max): 6.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 500 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.92 EUR
14+1.33 EUR
100+0.88 EUR
500+0.68 EUR
1000+0.62 EUR
Mindestbestellmenge: 10
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BGA612H6327 INFNS16400-1.pdf?t.download=true&u=5oefqw
BGA612H6327
Hersteller: Infineon Technologies
Description: IC AMP 802.15 500MHZ-6GHZ SOT343
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 500MHz ~ 6GHz
RF Type: 802.15/Bluetooth, ISM, WLAN, GSM, GPS, DCS, UMTS
Voltage - Supply: 2.75V
Gain: 15dB
Current - Supply: 10mA
Noise Figure: 1dB
P1dB: -16.5dBm
Test Frequency: 1.575GHz
Supplier Device Package: PG-SOT343-4
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2EDL05I06PFXUMA1 Infineon-2EDL05x06xx-DS-v02_05-EN.pdf?fileId=db3a30433e30e4bf013e3c649ffd6c8b
2EDL05I06PFXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE DSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 48ns, 24ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 500mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.97 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
2EDL05I06PFXUMA1 Infineon-2EDL05x06xx-DS-v02_05-EN.pdf?fileId=db3a30433e30e4bf013e3c649ffd6c8b
2EDL05I06PFXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE DSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 48ns, 24ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 500mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 3742 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+1.99 EUR
13+1.44 EUR
25+1.31 EUR
100+1.15 EUR
250+1.08 EUR
500+1.04 EUR
1000+1 EUR
Mindestbestellmenge: 9
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SAF-C505CA-LMCA INFNS04968-1.pdf?t.download=true&u=5oefqw
SAF-C505CA-LMCA
Hersteller: Infineon Technologies
Description: IC MCU 8BIT ROMLESS 44MQFP
Packaging: Bulk
Package / Case: 44-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 1.25K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C500
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V
Connectivity: CANbus, EBI/EMI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-44-2
Part Status: Active
Number of I/O: 34
Produkt ist nicht verfügbar
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SAFC505CALMCA INFNS04968-1.pdf?t.download=true&u=5oefqw
SAFC505CALMCA
Hersteller: Infineon Technologies
Description: IC MCU 8BIT ROMLESS 44MQFP
Packaging: Bulk
Package / Case: 44-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 1.25K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C500
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V
Connectivity: CANbus, EBI/EMI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-44-2
Part Status: Active
Number of I/O: 34
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TC264D40F200NBCKXUMA2 Infineon-TC26xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b40169538e06030445
TC264D40F200NBCKXUMA2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2.5MB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2.5MB (2.5M x 8)
RAM Size: 240K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: TriCore™
Data Converters: A/D 48x12b SAR, 3 x Sigma-Delta
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LQFP-144-22
Part Status: Active
Number of I/O: 88
DigiKey Programmable: Not Verified
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+20.55 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
TC264D40F200NBCKXUMA2 Infineon-TC26xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b40169538e06030445
TC264D40F200NBCKXUMA2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2.5MB FLASH 144LQFP
Packaging: Cut Tape (CT)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2.5MB (2.5M x 8)
RAM Size: 240K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: TriCore™
Data Converters: A/D 48x12b SAR, 3 x Sigma-Delta
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LQFP-144-22
Part Status: Active
Number of I/O: 88
DigiKey Programmable: Not Verified
auf Bestellung 1692 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+34.43 EUR
10+27.58 EUR
25+25.88 EUR
100+24 EUR
250+23.11 EUR
500+22.57 EUR
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ITS436L2SHKSA1 INFNS09387-1.pdf?t.download=true&u=5oefqw
ITS436L2SHKSA1
Hersteller: Infineon Technologies
Description: BUFFER/INVERTER PERIPHL DRIVER
auf Bestellung 3879 Stücke:
Lieferzeit 10-14 Tag (e)
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BTS430K2E3122A INFNS20608-1.pdf?t.download=true&u=5oefqw
BTS430K2E3122A
Hersteller: Infineon Technologies
Description: BUFFER/INVERTER PERIPHL DRIVER
Packaging: Bulk
Features: Auto Restart, Slew Rate Controlled
Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 30mOhm
Input Type: Non-Inverting
Voltage - Load: 4.5V ~ 32V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 36A
Ratio - Input:Output: 1:1
Supplier Device Package: P-TO220-5-122
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
Produkt ist nicht verfügbar
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BTS436L2GNTMA1 INFNS05499-1.pdf?t.download=true&u=5oefqw
BTS436L2GNTMA1
Hersteller: Infineon Technologies
Description: BUFFER/INVERTER PERIPHL DRIVER
Packaging: Bulk
Features: Slew Rate Controlled
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 35mOhm
Input Type: Non-Inverting
Voltage - Load: 4.75V ~ 41V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 9.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-5-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Load, Over Temperature, Over Voltage, Short Circuit, UVLO
Part Status: Active
Produkt ist nicht verfügbar
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BFR182E-6327 INFNS10845-1.pdf?t.download=true&u=5oefqw
BFR182E-6327
Hersteller: Infineon Technologies
Description: RF N-CHANNEL MOSFET
Produkt ist nicht verfügbar
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2EDF9275FXUMA1 Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057
2EDF9275FXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+2.48 EUR
Mindestbestellmenge: 2500
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2EDF9275FXUMA1 Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057
2EDF9275FXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 3090 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.66 EUR
10+3.5 EUR
25+3.21 EUR
100+2.88 EUR
250+2.73 EUR
500+2.64 EUR
1000+2.56 EUR
Mindestbestellmenge: 4
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FS200R12PT4BOSA1 Infineon-FS200R12PT4-DS-v02_02-en_de.pdf?fileId=db3a30432239cccd01230df5d3f555e9
FS200R12PT4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 280A 1000W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 280 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1000 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
auf Bestellung 21 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+246.22 EUR
12+222.49 EUR
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BTS611L1E3128ANTMA1 INFNS05471-1.pdf?t.download=true&u=5oefqw
BTS611L1E3128ANTMA1
Hersteller: Infineon Technologies
Description: 2 CH HIGH-SIDE POWER SWITCH
Packaging: Bulk
Features: Auto Restart, Slew Rate Controlled
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 160mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.4A
Ratio - Input:Output: 1:1
Supplier Device Package: P-TO263-7-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Short Circuit, UVLO
Part Status: Active
auf Bestellung 71296 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
137+3.51 EUR
Mindestbestellmenge: 137
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BSC0910NDIATMA1 Infineon-BSC0910NDI-DS-v02_00-en.pdf?fileId=db3a304336ca04c90136cedc08b64926
BSC0910NDIATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 25V 11A/31A TISON8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 11A, 31A
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 12V
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
Part Status: Active
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.29 EUR
Mindestbestellmenge: 5000
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BSC0910NDIATMA1 Infineon-BSC0910NDI-DS-v02_00-en.pdf?fileId=db3a304336ca04c90136cedc08b64926
BSC0910NDIATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 25V 11A/31A TISON8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 11A, 31A
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 12V
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
Part Status: Active
auf Bestellung 10182 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.08 EUR
10+2.77 EUR
100+1.9 EUR
500+1.53 EUR
1000+1.44 EUR
Mindestbestellmenge: 5
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BSP372NH6327XTSA1 BSP372N_rev2+0.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30433dd58def013dd8e68ae413f6
BSP372NH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 1.8A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 1.8A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 218µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 329 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 22000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.46 EUR
2000+0.42 EUR
3000+0.4 EUR
5000+0.38 EUR
7000+0.36 EUR
10000+0.35 EUR
Mindestbestellmenge: 1000
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BCR196WH6327XTSA1 bcr196series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301144048156b02db
BCR196WH6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Resistors Included: R1 and R2
auf Bestellung 489000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4486+0.11 EUR
Mindestbestellmenge: 4486
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BCR196E6327HTSA1 bcr196series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301144048156b02db
BCR196E6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Resistors Included: R1 and R2
auf Bestellung 156000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6648+0.075 EUR
Mindestbestellmenge: 6648
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BB831E7904HTSA1 BB831.pdf
BB831E7904HTSA1
Hersteller: Infineon Technologies
Description: DIODE VAR CAP 30V 20MA SOD-323
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 1.2pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SOD323-3D
Part Status: Obsolete
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 9.5
auf Bestellung 92500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2077+0.22 EUR
Mindestbestellmenge: 2077
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BB831E7904 INFNS11653-1.pdf?t.download=true&u=5oefqw
BB831E7904
Hersteller: Infineon Technologies
Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 1.2pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SOD323-2
Part Status: Active
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 9.5
Produkt ist nicht verfügbar
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BTS730CT INFNS12421-1.pdf?t.download=true&u=5oefqw
BTS730CT
Hersteller: Infineon Technologies
Description: FLUORESCENT LIGHT CONTROLLER
Produkt ist nicht verfügbar
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BTS730NT
Hersteller: Infineon Technologies
Description: IC PWR PWM N-CH 1:1 DSO-20
Produkt ist nicht verfügbar
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XMC1404F064X0200AAXUMA1 Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1404F064X0200AAXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 200KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-26
Part Status: Active
Number of I/O: 48
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IAUZ20N08S5L300ATMA1 Infineon-IAUZ20N08S5L300-DataSheet-v01_00-EN.pdf?fileId=5546d4626f1cf1c5016f1e6316a2012e
IAUZ20N08S5L300ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 20A 8TSDSON-32
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 8µA
Supplier Device Package: PG-TSDSON-8-32
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 599 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.42 EUR
Mindestbestellmenge: 5000
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IAUZ20N08S5L300ATMA1 Infineon-IAUZ20N08S5L300-DataSheet-v01_00-EN.pdf?fileId=5546d4626f1cf1c5016f1e6316a2012e
IAUZ20N08S5L300ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 20A 8TSDSON-32
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 8µA
Supplier Device Package: PG-TSDSON-8-32
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 599 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5603 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.8 EUR
16+1.13 EUR
100+0.74 EUR
500+0.58 EUR
1000+0.52 EUR
2000+0.48 EUR
Mindestbestellmenge: 10
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IRF7805ZTRPBF-1 IRF7805ZPbF-1_11-20-13.pdf
IRF7805ZTRPBF-1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 16A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 16A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 15 V
Produkt ist nicht verfügbar
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SAK-C167CR-L33MTR
Hersteller: Infineon Technologies
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IR38165MTRPBFAUMA1 Infineon-IR38163M%20IR38165M%20IR38363M%20IR38365M%20Datasheet-DS-v03_20-EN.pdf?fileId=5546d4625b62cd8a015bcf81f1526e4c
IR38165MTRPBFAUMA1
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 30A 24PQFN
Packaging: Tape & Reel (TR)
Package / Case: 24-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 30A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 150kHz ~ 1.5MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: 24-PQFN (5x7)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.5V
Part Status: Active
Produkt ist nicht verfügbar
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IR38165MTRPBFAUMA1 Infineon-IR38163M%20IR38165M%20IR38363M%20IR38365M%20Datasheet-DS-v03_20-EN.pdf?fileId=5546d4625b62cd8a015bcf81f1526e4c
IR38165MTRPBFAUMA1
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 30A 24PQFN
Packaging: Cut Tape (CT)
Package / Case: 24-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 30A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 150kHz ~ 1.5MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: 24-PQFN (5x7)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.5V
Part Status: Active
Produkt ist nicht verfügbar
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DEMO-PTOOL-300W-M Infineon-DEMO-PTOOL-300W-M%20User%20Guide-UM-v01_01-EN.pdf?fileId=5546d4625cc9456a015ce51926c20951
DEMO-PTOOL-300W-M
Hersteller: Infineon Technologies
Description: EVAL POWER TOOL
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+149.09 EUR
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