Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (148913) > Seite 343 nach 2482

Wählen Sie Seite:   [  << Vorherige Seite ]  1 248 338 339 340 341 342 343 344 345 346 347 348 496 744 992 1240 1488 1736 1984 2232 2480 2482  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
BCP69E6327 BCP69E6327 Infineon Technologies INFNS25205-1.pdf?t.download=true&u=5oefqw Description: POWER BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
auf Bestellung 6693 Stücke:
Lieferzeit 10-14 Tag (e)
4261+0.11 EUR
Mindestbestellmenge: 4261
Im Einkaufswagen  Stück im Wert von  UAH
BCP54E6327 BCP54E6327 Infineon Technologies INFNS12466-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 45V 1A SOT-223
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 2 W
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
2597+0.20 EUR
Mindestbestellmenge: 2597
Im Einkaufswagen  Stück im Wert von  UAH
IPD160N04LG IPD160N04LG Infineon Technologies INFNS16976-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2V @ 10µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT63-07WE6327 BAT63-07WE6327 Infineon Technologies INFNS15704-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTTKY 3V 100MW SOT3434
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.85pF @ 0.2V, 1MHz
Voltage - Peak Reverse (Max): 3V
Supplier Device Package: PG-SOT343-4
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 100 mW
auf Bestellung 13185 Stücke:
Lieferzeit 10-14 Tag (e)
2840+0.17 EUR
Mindestbestellmenge: 2840
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R600E6BTMA1 IPD60R600E6BTMA1 Infineon Technologies INFN-S-A0001299393-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R600CP IPD60R600CP Infineon Technologies INFNS27822-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V
auf Bestellung 4945 Stücke:
Lieferzeit 10-14 Tag (e)
452+1.11 EUR
Mindestbestellmenge: 452
Im Einkaufswagen  Stück im Wert von  UAH
BCR108WH6433 BCR108WH6433 Infineon Technologies INFNS17177-1.pdf?t.download=true&u=5oefqw Description: TRANS PREBIAS NPN 50V SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
6571+0.08 EUR
Mindestbestellmenge: 6571
Im Einkaufswagen  Stück im Wert von  UAH
BAT64-05WE6327 BAT64-05WE6327 Infineon Technologies INFNS11551-1.pdf?t.download=true&u=5oefqw Description: RECTIFIER DIODE, SCHOTTKY
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD50N06S3L-08 IPD50N06S3L-08 Infineon Technologies INFNS13222-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drain to Source Voltage (Vdss): 55 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT64-06B5000 BAT64-06B5000 Infineon Technologies INFNS09506-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOTT 40V SOT23-3-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120mA
Supplier Device Package: PG-SOT23-3-3
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 180000 Stücke:
Lieferzeit 10-14 Tag (e)
10377+0.05 EUR
Mindestbestellmenge: 10377
Im Einkaufswagen  Stück im Wert von  UAH
BCR108SH6327 BCR108SH6327 Infineon Technologies Infineon-BCR108SERIES-DS-v01_01-en[1].pdf?fileId=db3a30431428a37301144054398602e5 Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Frequency - Transition: 170MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: PG-SOT363-6-1
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAV74E6327 BAV74E6327 Infineon Technologies SIEMD095-344.pdf?t.download=true&u=5oefqw Description: RECTIFIER DIODE
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: TO-236AB
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSP135L6906 BSP135L6906 Infineon Technologies INFNS19222-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 94µA
Supplier Device Package: PG-SOT223-4-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 146 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SGB20N60E3045A SGB20N60E3045A Infineon Technologies INFNS10028-1.pdf?t.download=true&u=5oefqw Description: IGBT, 40A, 600V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Td (on/off) @ 25°C: 36ns/225ns
Switching Energy: 440µJ (on), 330µJ (off)
Test Condition: 400V, 20A, 16Ohm, 15V
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 179 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB260N06N3G IPB260N06N3G Infineon Technologies INFNS16348-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 25.7mOhm @ 27A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 11µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SGB15N60 SGB15N60 Infineon Technologies INFNS10027-1.pdf?t.download=true&u=5oefqw Description: IGBT NPT 600V 31A TO263-3-2
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Td (on/off) @ 25°C: 32ns/234ns
Switching Energy: 570µJ
Test Condition: 400V, 15A, 21Ohm, 15V
Gate Charge: 76 nC
Part Status: Active
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 62 A
Power - Max: 139 W
auf Bestellung 2527 Stücke:
Lieferzeit 10-14 Tag (e)
219+2.22 EUR
Mindestbestellmenge: 219
Im Einkaufswagen  Stück im Wert von  UAH
SGW15N120 SGW15N120 Infineon Technologies INFNS14172-1.pdf?t.download=true&u=5oefqw Description: IGBT, 30A, 1200V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 15A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 18ns/580ns
Switching Energy: 1.9mJ
Test Condition: 800V, 15A, 33Ohm, 15V
Gate Charge: 130 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 52 A
Power - Max: 198 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDT04S60C IDT04S60C Infineon Technologies INFNS12321-1.pdf?t.download=true&u=5oefqw description Description: RECTIFIER DIODE, SCHOTTKY
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 60pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 3 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
auf Bestellung 414 Stücke:
Lieferzeit 10-14 Tag (e)
198+2.49 EUR
Mindestbestellmenge: 198
Im Einkaufswagen  Stück im Wert von  UAH
SGP30N60 SGP30N60 Infineon Technologies INFNS14175-1.pdf?t.download=true&u=5oefqw description Description: IGBT, 41A, 600V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: TO-220AB
IGBT Type: NPT
Td (on/off) @ 25°C: 44ns/291ns
Switching Energy: 1.29mJ
Test Condition: 400V, 30A, 11Ohm, 15V
Gate Charge: 140 nC
Part Status: Active
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 112 A
Power - Max: 250 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMBT2907ALT1XT MMBT2907ALT1XT Infineon Technologies INFNS17336-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 330 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDT02S60C IDT02S60C Infineon Technologies INFNS25495-1.pdf?t.download=true&u=5oefqw Description: DIODE SIL CARB 600V 3A TO220-2
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 60pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 3 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
392+1.25 EUR
Mindestbestellmenge: 392
Im Einkaufswagen  Stück im Wert von  UAH
IPB60R299CP IPB60R299CP Infineon Technologies INFNS16959-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SGW20N60HS SGW20N60HS Infineon Technologies INFNS14174-1.pdf?t.download=true&u=5oefqw Description: IGBT NPT 600V 36A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 20A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 18ns/207ns
Switching Energy: 690µJ
Test Condition: 400V, 20A, 16Ohm, 15V
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 178 W
auf Bestellung 1530 Stücke:
Lieferzeit 10-14 Tag (e)
163+2.85 EUR
Mindestbestellmenge: 163
Im Einkaufswagen  Stück im Wert von  UAH
SAF-C161PI-LFCA SAF-C161PI-LFCA Infineon Technologies INFNS00746-1.pdf?t.download=true&u=5oefqw Description: IC MCU 16BIT ROMLESS 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 3K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 4x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: EBI/EMI, I²C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-TQFP-100-1
Part Status: Active
Number of I/O: 76
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PEB2045NVA3SMTSC PEB2045NVA3SMTSC Infineon Technologies SIEMD00112-45.pdf?t.download=true&u=5oefqw Description: IC MEMORY 44PLCC
Packaging: Bulk
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Type: Memory
Supplier Device Package: 44-PLCC (16.6x16.6)
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
15+36.61 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
PEB2466HV2.2TR PEB2466HV2.2TR Infineon Technologies Description: SICOFI CODEC FILTER
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PEF2035NV4.1ACFA Infineon Technologies Description: ADVANCED CMOS FRAME ALIGNER ACFA
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
13+38.41 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
SGP10N60A SGP10N60A Infineon Technologies INFNS14171-1.pdf?t.download=true&u=5oefqw Description: IGBT, 20A, 600V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 10A
Supplier Device Package: PG-TO220-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 28ns/178ns
Switching Energy: 320µJ
Test Condition: 400V, 10A, 25Ohm, 15V
Gate Charge: 52 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 92 W
auf Bestellung 30666 Stücke:
Lieferzeit 10-14 Tag (e)
277+1.73 EUR
Mindestbestellmenge: 277
Im Einkaufswagen  Stück im Wert von  UAH
SKW30N60HS Infineon Technologies Description: IGBT, 41A, 600V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 125 ns
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 20ns/250ns
Switching Energy: 1.15mJ
Test Condition: 400V, 30A, 11Ohm, 15V
Gate Charge: 141 nC
Part Status: Active
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 112 A
Power - Max: 250 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SAF-C161S-LM3VAA SAF-C161S-LM3VAA Infineon Technologies INFNS05712-1.pdf?t.download=true&u=5oefqw Description: IC MCU 16BIT ROMLESS 80MQFP
Packaging: Bulk
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Part Status: Active
Number of I/O: 63
DigiKey Programmable: Not Verified
auf Bestellung 221 Stücke:
Lieferzeit 10-14 Tag (e)
73+6.93 EUR
Mindestbestellmenge: 73
Im Einkaufswagen  Stück im Wert von  UAH
IPD060N03LGINCT Infineon Technologies INFNS16443-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB80N06S2LH5 IPB80N06S2LH5 Infineon Technologies INFNS09530-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PEF2035NV4.1 Infineon Technologies PEF2035-N.pdf?t.download=true&u=ovmfp3 Description: ADVANCED CMOS FRAME ALIGNER ACFA
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 1455 Stücke:
Lieferzeit 10-14 Tag (e)
13+38.41 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
PEF2054NV21 PEF2054NV21 Infineon Technologies Description: TIME SLOT ASSIGNER
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPB04N60C3 SPB04N60C3 Infineon Technologies Infineon-SPB04N60C3-DS-v02_05-en.pdf?fileId=db3a304412b407950112b42ddb2c4904 Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPA08N50C3XK SPA08N50C3XK Infineon Technologies INFNS14195-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO220-3-111
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TC1797512F180EACKDUMA2 TC1797512F180EACKDUMA2 Infineon Technologies INFNS16628-1.pdf?t.download=true&u=5oefqw Description: 32-BIT RISC FLASH MCU
Packaging: Bulk
Package / Case: 416-BGA
Mounting Type: Surface Mount
Speed: 180MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 224K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 48x10b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.42V ~ 1.58V
Connectivity: ASC, CANbus, EBI/EMI, FlexRay, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-BGA-416-27
Part Status: Active
Number of I/O: 221
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPB03N60S5 SPB03N60S5 Infineon Technologies spp_b03n60s5.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 135µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
670+0.71 EUR
Mindestbestellmenge: 670
Im Einkaufswagen  Stück im Wert von  UAH
PEF2035NV4.1-ACFA Infineon Technologies Description: ADVANCED CMOS FRAME ALIGNER ACFA
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
13+38.41 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
SPB11N60C2 SPB11N60C2 Infineon Technologies Infineon-SPB11N60C3-DS-v02_06-en.pdf?fileId=db3a304412b407950112b42dde5d4908 Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 500µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PEB2466HV2.2 PEB2466HV2.2 Infineon Technologies Description: SICOFI CODEC FILTER
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPA08N50C3XKAS1 SPA08N50C3XKAS1 Infineon Technologies INFNS14195-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO220-3-111
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PEF2026T-SV1.1 PEF2026T-SV1.1 Infineon Technologies Description: ISDN POWER CONTROLLER
Packaging: Tube
Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: High Voltage Power Controller
Interface: ISDN
Operating Temperature: -40°C ~ 85°C
Current - Supply: 700µA
Supplier Device Package: P-DSO-20-5
Part Status: Active
Number of Circuits: 1
auf Bestellung 1890 Stücke:
Lieferzeit 10-14 Tag (e)
36+13.67 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
SGP20N60HS SGP20N60HS Infineon Technologies INFNS14174-1.pdf?t.download=true&u=5oefqw Description: IGBT, 36A, 600V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 20A
Supplier Device Package: PG-TO220-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 18ns/207ns
Switching Energy: 690µJ
Test Condition: 400V, 20A, 16Ohm, 15V
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 178 W
auf Bestellung 520 Stücke:
Lieferzeit 10-14 Tag (e)
221+2.18 EUR
Mindestbestellmenge: 221
Im Einkaufswagen  Stück im Wert von  UAH
SPD07N60C2 SPD07N60C2 Infineon Technologies Infineon-SPD_U07N60C3-DS-v02_07-en.pdf?fileId=db3a30433f1b26e8013f1e7536e102d4 Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPI07N65C3XKSA1 SPI07N65C3XKSA1 Infineon Technologies INFNS17080-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
auf Bestellung 23000 Stücke:
Lieferzeit 10-14 Tag (e)
275+1.69 EUR
Mindestbestellmenge: 275
Im Einkaufswagen  Stück im Wert von  UAH
PEF2095NVA5 Infineon Technologies Description: IC TRANSCEIVER
Packaging: Bulk
Part Status: Active
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
27+18.51 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
PEF2054NV1.0EPICS Infineon Technologies Description: TIME SLOT ASSIGNER
Packaging: Bulk
Part Status: Active
auf Bestellung 140 Stücke:
Lieferzeit 10-14 Tag (e)
41+13.01 EUR
Mindestbestellmenge: 41
Im Einkaufswagen  Stück im Wert von  UAH
SPB160N04S2-03 SPB160N04S2-03 Infineon Technologies spb160n04s2-03_1.pdf?t.download=true&u=5oefqw Description: 160A, 40V N-CHANNEL, MOSFET
Packaging: Bulk
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7320 pF @ 25 V
auf Bestellung 252 Stücke:
Lieferzeit 10-14 Tag (e)
137+3.39 EUR
Mindestbestellmenge: 137
Im Einkaufswagen  Stück im Wert von  UAH
SAF-TC1920LEB Infineon Technologies Description: 32-BIT RISC FLASH MCU
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 963 Stücke:
Lieferzeit 10-14 Tag (e)
17+27.33 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
SMBTA06 SMBTA06 Infineon Technologies INFNS17339-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 330 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
6000+0.08 EUR
Mindestbestellmenge: 6000
Im Einkaufswagen  Stück im Wert von  UAH
PEF20570FV3.1 Infineon Technologies Description: LINE & PORT INTERFACE CONTROLLER
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 1670 Stücke:
Lieferzeit 10-14 Tag (e)
14+36.67 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
SPB02N60S5 SPB02N60S5 Infineon Technologies spb02n60s5_rev.2.4.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 80µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPI07N65C3 SPI07N65C3 Infineon Technologies INFNS17080-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
335+1.44 EUR
Mindestbestellmenge: 335
Im Einkaufswagen  Stück im Wert von  UAH
SPI16N50C3 SPI16N50C3 Infineon Technologies INFNS14199-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 675µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
300+1.89 EUR
Mindestbestellmenge: 300
Im Einkaufswagen  Stück im Wert von  UAH
SPP03N60S5 SPP03N60S5 Infineon Technologies Infineon-SPP_A03N60C3-DS-v03_01-en.pdf?fileId=db3a304412b407950112b42dfb1c492b Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 135µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
auf Bestellung 29235 Stücke:
Lieferzeit 10-14 Tag (e)
495+0.98 EUR
Mindestbestellmenge: 495
Im Einkaufswagen  Stück im Wert von  UAH
SPI07N60C3 SPI07N60C3 Infineon Technologies INFN-S-A0004583442-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
277+1.73 EUR
Mindestbestellmenge: 277
Im Einkaufswagen  Stück im Wert von  UAH
SPI12N50C3 SPI12N50C3 Infineon Technologies INFNS14197-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
263+1.83 EUR
Mindestbestellmenge: 263
Im Einkaufswagen  Stück im Wert von  UAH
SPB02N60C3 SPB02N60C3 Infineon Technologies spp_b02n60c3.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 80µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
auf Bestellung 11500 Stücke:
Lieferzeit 10-14 Tag (e)
594+0.82 EUR
Mindestbestellmenge: 594
Im Einkaufswagen  Stück im Wert von  UAH
SPI15N60CFD SPI15N60CFD Infineon Technologies spi15n60cfd_rev1.0_b.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 9.4A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 750µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 415 Stücke:
Lieferzeit 10-14 Tag (e)
184+2.65 EUR
Mindestbestellmenge: 184
Im Einkaufswagen  Stück im Wert von  UAH
BCP69E6327 INFNS25205-1.pdf?t.download=true&u=5oefqw
BCP69E6327
Hersteller: Infineon Technologies
Description: POWER BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
auf Bestellung 6693 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4261+0.11 EUR
Mindestbestellmenge: 4261
Im Einkaufswagen  Stück im Wert von  UAH
BCP54E6327 INFNS12466-1.pdf?t.download=true&u=5oefqw
BCP54E6327
Hersteller: Infineon Technologies
Description: TRANS NPN 45V 1A SOT-223
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 2 W
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2597+0.20 EUR
Mindestbestellmenge: 2597
Im Einkaufswagen  Stück im Wert von  UAH
IPD160N04LG INFNS16976-1.pdf?t.download=true&u=5oefqw
IPD160N04LG
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2V @ 10µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT63-07WE6327 INFNS15704-1.pdf?t.download=true&u=5oefqw
BAT63-07WE6327
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 3V 100MW SOT3434
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.85pF @ 0.2V, 1MHz
Voltage - Peak Reverse (Max): 3V
Supplier Device Package: PG-SOT343-4
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 100 mW
auf Bestellung 13185 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2840+0.17 EUR
Mindestbestellmenge: 2840
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R600E6BTMA1 INFN-S-A0001299393-1.pdf?t.download=true&u=5oefqw
IPD60R600E6BTMA1
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R600CP INFNS27822-1.pdf?t.download=true&u=5oefqw
IPD60R600CP
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V
auf Bestellung 4945 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
452+1.11 EUR
Mindestbestellmenge: 452
Im Einkaufswagen  Stück im Wert von  UAH
BCR108WH6433 INFNS17177-1.pdf?t.download=true&u=5oefqw
BCR108WH6433
Hersteller: Infineon Technologies
Description: TRANS PREBIAS NPN 50V SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6571+0.08 EUR
Mindestbestellmenge: 6571
Im Einkaufswagen  Stück im Wert von  UAH
BAT64-05WE6327 INFNS11551-1.pdf?t.download=true&u=5oefqw
BAT64-05WE6327
Hersteller: Infineon Technologies
Description: RECTIFIER DIODE, SCHOTTKY
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD50N06S3L-08 INFNS13222-1.pdf?t.download=true&u=5oefqw
IPD50N06S3L-08
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drain to Source Voltage (Vdss): 55 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT64-06B5000 INFNS09506-1.pdf?t.download=true&u=5oefqw
BAT64-06B5000
Hersteller: Infineon Technologies
Description: DIODE ARR SCHOTT 40V SOT23-3-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120mA
Supplier Device Package: PG-SOT23-3-3
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 180000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10377+0.05 EUR
Mindestbestellmenge: 10377
Im Einkaufswagen  Stück im Wert von  UAH
BCR108SH6327 Infineon-BCR108SERIES-DS-v01_01-en[1].pdf?fileId=db3a30431428a37301144054398602e5
BCR108SH6327
Hersteller: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Frequency - Transition: 170MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: PG-SOT363-6-1
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAV74E6327 SIEMD095-344.pdf?t.download=true&u=5oefqw
BAV74E6327
Hersteller: Infineon Technologies
Description: RECTIFIER DIODE
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: TO-236AB
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSP135L6906 INFNS19222-1.pdf?t.download=true&u=5oefqw
BSP135L6906
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 94µA
Supplier Device Package: PG-SOT223-4-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 146 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SGB20N60E3045A INFNS10028-1.pdf?t.download=true&u=5oefqw
SGB20N60E3045A
Hersteller: Infineon Technologies
Description: IGBT, 40A, 600V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Td (on/off) @ 25°C: 36ns/225ns
Switching Energy: 440µJ (on), 330µJ (off)
Test Condition: 400V, 20A, 16Ohm, 15V
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 179 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB260N06N3G INFNS16348-1.pdf?t.download=true&u=5oefqw
IPB260N06N3G
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 25.7mOhm @ 27A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 11µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SGB15N60 INFNS10027-1.pdf?t.download=true&u=5oefqw
SGB15N60
Hersteller: Infineon Technologies
Description: IGBT NPT 600V 31A TO263-3-2
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Td (on/off) @ 25°C: 32ns/234ns
Switching Energy: 570µJ
Test Condition: 400V, 15A, 21Ohm, 15V
Gate Charge: 76 nC
Part Status: Active
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 62 A
Power - Max: 139 W
auf Bestellung 2527 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
219+2.22 EUR
Mindestbestellmenge: 219
Im Einkaufswagen  Stück im Wert von  UAH
SGW15N120 INFNS14172-1.pdf?t.download=true&u=5oefqw
SGW15N120
Hersteller: Infineon Technologies
Description: IGBT, 30A, 1200V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 15A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 18ns/580ns
Switching Energy: 1.9mJ
Test Condition: 800V, 15A, 33Ohm, 15V
Gate Charge: 130 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 52 A
Power - Max: 198 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDT04S60C description INFNS12321-1.pdf?t.download=true&u=5oefqw
IDT04S60C
Hersteller: Infineon Technologies
Description: RECTIFIER DIODE, SCHOTTKY
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 60pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 3 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
auf Bestellung 414 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
198+2.49 EUR
Mindestbestellmenge: 198
Im Einkaufswagen  Stück im Wert von  UAH
SGP30N60 description INFNS14175-1.pdf?t.download=true&u=5oefqw
SGP30N60
Hersteller: Infineon Technologies
Description: IGBT, 41A, 600V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: TO-220AB
IGBT Type: NPT
Td (on/off) @ 25°C: 44ns/291ns
Switching Energy: 1.29mJ
Test Condition: 400V, 30A, 11Ohm, 15V
Gate Charge: 140 nC
Part Status: Active
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 112 A
Power - Max: 250 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMBT2907ALT1XT INFNS17336-1.pdf?t.download=true&u=5oefqw
MMBT2907ALT1XT
Hersteller: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 330 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDT02S60C INFNS25495-1.pdf?t.download=true&u=5oefqw
IDT02S60C
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 3A TO220-2
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 60pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 3 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
392+1.25 EUR
Mindestbestellmenge: 392
Im Einkaufswagen  Stück im Wert von  UAH
IPB60R299CP INFNS16959-1.pdf?t.download=true&u=5oefqw
IPB60R299CP
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SGW20N60HS INFNS14174-1.pdf?t.download=true&u=5oefqw
SGW20N60HS
Hersteller: Infineon Technologies
Description: IGBT NPT 600V 36A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 20A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 18ns/207ns
Switching Energy: 690µJ
Test Condition: 400V, 20A, 16Ohm, 15V
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 178 W
auf Bestellung 1530 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
163+2.85 EUR
Mindestbestellmenge: 163
Im Einkaufswagen  Stück im Wert von  UAH
SAF-C161PI-LFCA INFNS00746-1.pdf?t.download=true&u=5oefqw
SAF-C161PI-LFCA
Hersteller: Infineon Technologies
Description: IC MCU 16BIT ROMLESS 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 3K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 4x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: EBI/EMI, I²C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-TQFP-100-1
Part Status: Active
Number of I/O: 76
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PEB2045NVA3SMTSC SIEMD00112-45.pdf?t.download=true&u=5oefqw
PEB2045NVA3SMTSC
Hersteller: Infineon Technologies
Description: IC MEMORY 44PLCC
Packaging: Bulk
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Type: Memory
Supplier Device Package: 44-PLCC (16.6x16.6)
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+36.61 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
PEB2466HV2.2TR
PEB2466HV2.2TR
Hersteller: Infineon Technologies
Description: SICOFI CODEC FILTER
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PEF2035NV4.1ACFA
Hersteller: Infineon Technologies
Description: ADVANCED CMOS FRAME ALIGNER ACFA
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+38.41 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
SGP10N60A INFNS14171-1.pdf?t.download=true&u=5oefqw
SGP10N60A
Hersteller: Infineon Technologies
Description: IGBT, 20A, 600V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 10A
Supplier Device Package: PG-TO220-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 28ns/178ns
Switching Energy: 320µJ
Test Condition: 400V, 10A, 25Ohm, 15V
Gate Charge: 52 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 92 W
auf Bestellung 30666 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
277+1.73 EUR
Mindestbestellmenge: 277
Im Einkaufswagen  Stück im Wert von  UAH
SKW30N60HS
Hersteller: Infineon Technologies
Description: IGBT, 41A, 600V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 125 ns
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 20ns/250ns
Switching Energy: 1.15mJ
Test Condition: 400V, 30A, 11Ohm, 15V
Gate Charge: 141 nC
Part Status: Active
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 112 A
Power - Max: 250 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SAF-C161S-LM3VAA INFNS05712-1.pdf?t.download=true&u=5oefqw
SAF-C161S-LM3VAA
Hersteller: Infineon Technologies
Description: IC MCU 16BIT ROMLESS 80MQFP
Packaging: Bulk
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Part Status: Active
Number of I/O: 63
DigiKey Programmable: Not Verified
auf Bestellung 221 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
73+6.93 EUR
Mindestbestellmenge: 73
Im Einkaufswagen  Stück im Wert von  UAH
IPD060N03LGINCT INFNS16443-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB80N06S2LH5 INFNS09530-1.pdf?t.download=true&u=5oefqw
IPB80N06S2LH5
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PEF2035NV4.1 PEF2035-N.pdf?t.download=true&u=ovmfp3
Hersteller: Infineon Technologies
Description: ADVANCED CMOS FRAME ALIGNER ACFA
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 1455 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+38.41 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
PEF2054NV21
PEF2054NV21
Hersteller: Infineon Technologies
Description: TIME SLOT ASSIGNER
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPB04N60C3 Infineon-SPB04N60C3-DS-v02_05-en.pdf?fileId=db3a304412b407950112b42ddb2c4904
SPB04N60C3
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPA08N50C3XK INFNS14195-1.pdf?t.download=true&u=5oefqw
SPA08N50C3XK
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO220-3-111
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TC1797512F180EACKDUMA2 INFNS16628-1.pdf?t.download=true&u=5oefqw
TC1797512F180EACKDUMA2
Hersteller: Infineon Technologies
Description: 32-BIT RISC FLASH MCU
Packaging: Bulk
Package / Case: 416-BGA
Mounting Type: Surface Mount
Speed: 180MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 224K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 48x10b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.42V ~ 1.58V
Connectivity: ASC, CANbus, EBI/EMI, FlexRay, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-BGA-416-27
Part Status: Active
Number of I/O: 221
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPB03N60S5 spp_b03n60s5.pdf?t.download=true&u=5oefqw
SPB03N60S5
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 135µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
670+0.71 EUR
Mindestbestellmenge: 670
Im Einkaufswagen  Stück im Wert von  UAH
PEF2035NV4.1-ACFA
Hersteller: Infineon Technologies
Description: ADVANCED CMOS FRAME ALIGNER ACFA
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+38.41 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
SPB11N60C2 Infineon-SPB11N60C3-DS-v02_06-en.pdf?fileId=db3a304412b407950112b42dde5d4908
SPB11N60C2
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 500µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PEB2466HV2.2
PEB2466HV2.2
Hersteller: Infineon Technologies
Description: SICOFI CODEC FILTER
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPA08N50C3XKAS1 INFNS14195-1.pdf?t.download=true&u=5oefqw
SPA08N50C3XKAS1
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO220-3-111
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PEF2026T-SV1.1
PEF2026T-SV1.1
Hersteller: Infineon Technologies
Description: ISDN POWER CONTROLLER
Packaging: Tube
Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: High Voltage Power Controller
Interface: ISDN
Operating Temperature: -40°C ~ 85°C
Current - Supply: 700µA
Supplier Device Package: P-DSO-20-5
Part Status: Active
Number of Circuits: 1
auf Bestellung 1890 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
36+13.67 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
SGP20N60HS INFNS14174-1.pdf?t.download=true&u=5oefqw
SGP20N60HS
Hersteller: Infineon Technologies
Description: IGBT, 36A, 600V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 20A
Supplier Device Package: PG-TO220-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 18ns/207ns
Switching Energy: 690µJ
Test Condition: 400V, 20A, 16Ohm, 15V
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 178 W
auf Bestellung 520 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
221+2.18 EUR
Mindestbestellmenge: 221
Im Einkaufswagen  Stück im Wert von  UAH
SPD07N60C2 Infineon-SPD_U07N60C3-DS-v02_07-en.pdf?fileId=db3a30433f1b26e8013f1e7536e102d4
SPD07N60C2
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPI07N65C3XKSA1 INFNS17080-1.pdf?t.download=true&u=5oefqw
SPI07N65C3XKSA1
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
auf Bestellung 23000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
275+1.69 EUR
Mindestbestellmenge: 275
Im Einkaufswagen  Stück im Wert von  UAH
PEF2095NVA5
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER
Packaging: Bulk
Part Status: Active
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+18.51 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
PEF2054NV1.0EPICS
Hersteller: Infineon Technologies
Description: TIME SLOT ASSIGNER
Packaging: Bulk
Part Status: Active
auf Bestellung 140 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
41+13.01 EUR
Mindestbestellmenge: 41
Im Einkaufswagen  Stück im Wert von  UAH
SPB160N04S2-03 spb160n04s2-03_1.pdf?t.download=true&u=5oefqw
SPB160N04S2-03
Hersteller: Infineon Technologies
Description: 160A, 40V N-CHANNEL, MOSFET
Packaging: Bulk
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7320 pF @ 25 V
auf Bestellung 252 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
137+3.39 EUR
Mindestbestellmenge: 137
Im Einkaufswagen  Stück im Wert von  UAH
SAF-TC1920LEB
Hersteller: Infineon Technologies
Description: 32-BIT RISC FLASH MCU
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 963 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+27.33 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
SMBTA06 INFNS17339-1.pdf?t.download=true&u=5oefqw
SMBTA06
Hersteller: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 330 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6000+0.08 EUR
Mindestbestellmenge: 6000
Im Einkaufswagen  Stück im Wert von  UAH
PEF20570FV3.1
Hersteller: Infineon Technologies
Description: LINE & PORT INTERFACE CONTROLLER
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 1670 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+36.67 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
SPB02N60S5 spb02n60s5_rev.2.4.pdf?t.download=true&u=5oefqw
SPB02N60S5
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 80µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPI07N65C3 INFNS17080-1.pdf?t.download=true&u=5oefqw
SPI07N65C3
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
335+1.44 EUR
Mindestbestellmenge: 335
Im Einkaufswagen  Stück im Wert von  UAH
SPI16N50C3 INFNS14199-1.pdf?t.download=true&u=5oefqw
SPI16N50C3
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 675µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
300+1.89 EUR
Mindestbestellmenge: 300
Im Einkaufswagen  Stück im Wert von  UAH
SPP03N60S5 Infineon-SPP_A03N60C3-DS-v03_01-en.pdf?fileId=db3a304412b407950112b42dfb1c492b
SPP03N60S5
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 135µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
auf Bestellung 29235 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
495+0.98 EUR
Mindestbestellmenge: 495
Im Einkaufswagen  Stück im Wert von  UAH
SPI07N60C3 INFN-S-A0004583442-1.pdf?t.download=true&u=5oefqw
SPI07N60C3
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
277+1.73 EUR
Mindestbestellmenge: 277
Im Einkaufswagen  Stück im Wert von  UAH
SPI12N50C3 INFNS14197-1.pdf?t.download=true&u=5oefqw
SPI12N50C3
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
263+1.83 EUR
Mindestbestellmenge: 263
Im Einkaufswagen  Stück im Wert von  UAH
SPB02N60C3 spp_b02n60c3.pdf?t.download=true&u=5oefqw
SPB02N60C3
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 80µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
auf Bestellung 11500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
594+0.82 EUR
Mindestbestellmenge: 594
Im Einkaufswagen  Stück im Wert von  UAH
SPI15N60CFD spi15n60cfd_rev1.0_b.pdf?t.download=true&u=5oefqw
SPI15N60CFD
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 9.4A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 750µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 415 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
184+2.65 EUR
Mindestbestellmenge: 184
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 248 338 339 340 341 342 343 344 345 346 347 348 496 744 992 1240 1488 1736 1984 2232 2480 2482  [ Nächste Seite >> ]