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IR2182S IR2182S Infineon Technologies ir2181.pdf?fileId=5546d462533600a4015355c93cdd16ce Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SPI15N65C3 SPI15N65C3 Infineon Technologies Infineon-SPI15N65C3-DS-v02_00-en.pdf?fileId=db3a30431689f4420116d3acc8fe0c5a Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 9.4A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 675µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 400 Stücke:
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166+2.9 EUR
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TLE4941PLUSCAAMA1 TLE4941PLUSCAAMA1 Infineon Technologies Infineon-TLE4941plusC_PB-PB-v01_01-EN.PDF?fileId=5546d4625607bd1301560cafae653a04&ack=t Description: MAG SWITCH SPEC PURP SSO-2-53
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-53
Output Type: Current Source
Mounting Type: Through Hole
Function: Special Purpose
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-53
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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CY14V101NA-BA45XI CY14V101NA-BA45XI Infineon Technologies download Description: IC NVSRAM 1MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRFH5025TRPBF IRFH5025TRPBF Infineon Technologies irfh5025pbf.pdf?fileId=5546d462533600a40153561acde51ea0 Description: MOSFET N-CH 250V 3.8A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 5.7A, 10V
Power Dissipation (Max): 3.6W (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 5V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 50 V
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IRFH5025TRPBF IRFH5025TRPBF Infineon Technologies irfh5025pbf.pdf?fileId=5546d462533600a40153561acde51ea0 Description: MOSFET N-CH 250V 3.8A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 5.7A, 10V
Power Dissipation (Max): 3.6W (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 5V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 50 V
auf Bestellung 366 Stücke:
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4+5.58 EUR
10+4.69 EUR
100+3.79 EUR
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TD285N16KOFHPSA2 TD285N16KOFHPSA2 Infineon Technologies Infineon-TT285N16KOF-DS-v03_04-EN.pdf?fileId=db3a304412b407950112b42f7b4d4bc5 Description: SCR MODULE 1600V 520A MODULE
Produkt ist nicht verfügbar
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IPF13N03LAG Infineon Technologies INFNS11986-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
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IPP13N03LB G IPP13N03LB G Infineon Technologies IPP13N03LB_G.pdf Description: MOSFET N-CH 30V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 30A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1355 pF @ 15 V
Produkt ist nicht verfügbar
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IPS13N03LA G IPS13N03LA G Infineon Technologies ipd13n03la_rev2.1_g.pdf Description: MOSFET N-CH 25V 30A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 30A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1043 pF @ 15 V
Produkt ist nicht verfügbar
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BTT60302ERAXUMA1 BTT60302ERAXUMA1 Infineon Technologies Infineon-BTT6030-2ERA-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a21fa44260d82 Description: IC PWR SWITCH N-CHAN 1:1 TDSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 32mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-31
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 7755 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.77 EUR
10+4.36 EUR
25+4.01 EUR
100+3.62 EUR
250+3.43 EUR
500+3.32 EUR
1000+3.23 EUR
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IPB027N10N5ATMA1 IPB027N10N5ATMA1 Infineon Technologies Infineon-IPB027N10N5-DS-v02_01-EN.pdf?fileId=5546d4624ad04ef9014adf44f3dd7c86 Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 184µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 50 V
auf Bestellung 1020 Stücke:
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4+5.67 EUR
10+4.08 EUR
100+3.64 EUR
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FP75R12KT4B16BOSA1 FP75R12KT4B16BOSA1 Infineon Technologies Infineon-FP75R12KT4-DS-v03_00-CN.pdf?fileId=db3a30433dd58def013dd99b7db3181f Description: IGBT MOD 1200V 150A 385W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 385 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
auf Bestellung 7 Stücke:
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1+162.87 EUR
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FP75R12KT4PBPSA1 FP75R12KT4PBPSA1 Infineon Technologies Infineon-FP75R12KT4P-DS-v03_00-EN.pdf?fileId=5546d4625b3ca4ec015b57eb5fec0401 Description: IGBT MOD 1200V 150A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
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IPA65R600C6 Infineon Technologies INFNS28015-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO220-3-111
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Produkt ist nicht verfügbar
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IPA65R660CFDXKSA2 IPA65R660CFDXKSA2 Infineon Technologies Infineon-IPA65R660CFD-DataSheet-v02_07-EN.pdf?fileId=5546d462727878c201727e85f6c15b38 Description: MOSFET N-CH 700V 6A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
Power Dissipation (Max): 27.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
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IPA65R099C6XKSA1 IPA65R099C6XKSA1 Infineon Technologies IPx65R099C6.pdf Description: MOSFET N-CH 650V 38A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.8A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO220-3-111
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V
Produkt ist nicht verfügbar
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IRL3714TR IRL3714TR Infineon Technologies Part_Number_Guide_Web.pdf Description: MOSFET N-CH 20V 36A TO220AB
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 10 V
Produkt ist nicht verfügbar
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IRL3715TR IRL3715TR Infineon Technologies irl3715.pdf Description: MOSFET N-CH 20V 54A TO220AB
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IRL3715TRL IRL3715TRL Infineon Technologies irl3715.pdf Description: MOSFET N-CH 20V 54A TO220AB
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IRL3715TRR IRL3715TRR Infineon Technologies irl3715.pdf Description: MOSFET N-CH 20V 54A TO220AB
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BC848B-E6327 BC848B-E6327 Infineon Technologies INFNS14907-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 30V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
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BC846SE6327 BC846SE6327 Infineon Technologies INFNS17743-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR GEN PURPOSE TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT363-6-1
Part Status: Active
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BCR133WH6327 BCR133WH6327 Infineon Technologies INFNS17147-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 130 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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BCR133WE6327 BCR133WE6327 Infineon Technologies INFNS11633-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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XMC1301T016F0008AAXUMA1 XMC1301T016F0008AAXUMA1 Infineon Technologies XMC1300.pdf Description: IC MCU 32BIT 8KB FLASH 16TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 11x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-16-8
Part Status: Obsolete
Number of I/O: 11
DigiKey Programmable: Not Verified
auf Bestellung 8500 Stücke:
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371+1.22 EUR
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XMC1100T016X0016AAXUMA1 XMC1100T016X0016AAXUMA1 Infineon Technologies XMC1100.pdf Description: IC MCU 32BIT 16KB FLASH 16TSSOP
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2ED2109S06FXUMA1 2ED2109S06FXUMA1 Infineon Technologies Infineon-2ED2109-4-S06F-J-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016cb8d7493e29eb Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-53
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
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2500+0.89 EUR
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2ED2109S06FXUMA1 2ED2109S06FXUMA1 Infineon Technologies Infineon-2ED2109-4-S06F-J-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016cb8d7493e29eb Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-53
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 4196 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.85 EUR
14+1.33 EUR
25+1.2 EUR
100+1.06 EUR
250+1 EUR
500+0.96 EUR
1000+0.92 EUR
Mindestbestellmenge: 10
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2ED21064S06JXUMA1 2ED21064S06JXUMA1 Infineon Technologies Infineon-2ED2106-4-S06F-J-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d7402029e7 Description: IC GATE DRVR HI/LOW SIDE 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
High Side Voltage - Max (Bootstrap): 20 V
Supplier Device Package: PG-DSO-14
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.36 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
2ED21064S06JXUMA1 2ED21064S06JXUMA1 Infineon Technologies Infineon-2ED2106-4-S06F-J-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d7402029e7 Description: IC GATE DRVR HI/LOW SIDE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
High Side Voltage - Max (Bootstrap): 20 V
Supplier Device Package: PG-DSO-14
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 4994 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.73 EUR
10+2 EUR
25+1.81 EUR
100+1.61 EUR
250+1.52 EUR
500+1.46 EUR
1000+1.41 EUR
Mindestbestellmenge: 7
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2ED21091S06FXUMA1 2ED21091S06FXUMA1 Infineon Technologies Infineon-2ED21091S06F-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d7765529ff Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
High Side Voltage - Max (Bootstrap): 675 V
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2ED21091S06FXUMA1 2ED21091S06FXUMA1 Infineon Technologies Infineon-2ED21091S06F-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d7765529ff Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
High Side Voltage - Max (Bootstrap): 675 V
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
DigiKey Programmable: Not Verified
auf Bestellung 2430 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.85 EUR
14+1.33 EUR
25+1.2 EUR
100+1.06 EUR
250+1 EUR
500+0.96 EUR
1000+0.92 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
2ED2108S06FXUMA1 2ED2108S06FXUMA1 Infineon Technologies Infineon-2ED2108-4-S06F-J-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d752c029ef Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-53
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.79 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
2ED2108S06FXUMA1 2ED2108S06FXUMA1 Infineon Technologies Infineon-2ED2108-4-S06F-J-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d752c029ef Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-53
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 12186 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.85 EUR
14+1.33 EUR
25+1.2 EUR
100+1.06 EUR
250+1 EUR
500+0.96 EUR
1000+0.92 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
2ED21084S06JXUMA1 2ED21084S06JXUMA1 Infineon Technologies Infineon-2ED2108-4-S06F-J-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d752c029ef Description: IC HALF BRIDGE GATE DRIVER 650V
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-14-49
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2ED21084S06JXUMA1 2ED21084S06JXUMA1 Infineon Technologies Infineon-2ED2108-4-S06F-J-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d752c029ef Description: IC HALF BRIDGE GATE DRIVER 650V
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-14-49
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2ED21094S06JXUMA1 2ED21094S06JXUMA1 Infineon Technologies Infineon-2ED2109-4-S06F-J-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016cb8d7493e29eb Description: IC HALF BRIDGE GATE DRIVER 650V
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-14-49
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2ED21094S06JXUMA1 2ED21094S06JXUMA1 Infineon Technologies Infineon-2ED2109-4-S06F-J-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016cb8d7493e29eb Description: IC HALF BRIDGE GATE DRIVER 650V
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-14-49
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2242 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.12 EUR
10+2.8 EUR
25+2.64 EUR
100+2.25 EUR
250+2.12 EUR
500+1.85 EUR
1000+1.53 EUR
Mindestbestellmenge: 6
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SPP07N65C3IN SPP07N65C3IN Infineon Technologies Infineon-SPP_A_I07N65C3-DS-v01_91-en.pdf?fileId=db3a304412b407950112b42ea7e74a0b Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
Produkt ist nicht verfügbar
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2EDN8524RXUMA1 2EDN8524RXUMA1 Infineon Technologies Infineon-2EDN752x-2EDN852x-DS--DS-v02_03-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727 Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IGW75N60H3 IGW75N60H3 Infineon Technologies INFNS17450-1.pdf?t.download=true&u=5oefqw Description: IGBT WITHOUT ANTI-PARALLEL DIODE
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 31ns/265ns
Switching Energy: 3mJ (on), 1.7mJ (off)
Test Condition: 400V, 75A, 5.2Ohm, 15V
Gate Charge: 470 nC
Part Status: Active
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 428 W
Produkt ist nicht verfügbar
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PEB2060NV4.5G Infineon Technologies Description: SICOFI CODEC FILTER
Packaging: Bulk
Part Status: Active
auf Bestellung 1900 Stücke:
Lieferzeit 10-14 Tag (e)
26+19.1 EUR
Mindestbestellmenge: 26
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BB814E6327GR2 BB814E6327GR2 Infineon Technologies INFNS16375-1.pdf?t.download=true&u=5oefqw Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 22.7pF @ 8V, 1MHz
Q @ Vr, F: 200 @ 2V, 100MHz
Capacitance Ratio Condition: C2/C8
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Voltage - Peak Reverse (Max): 18 V
Capacitance Ratio: 2.25
auf Bestellung 23238 Stücke:
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Mindestbestellmenge: 3463
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BB814E7801GR1HTSA1 BB814E7801GR1HTSA1 Infineon Technologies INFNS16375-1.pdf?t.download=true&u=5oefqw Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 22.7pF @ 8V, 1MHz
Q @ Vr, F: 200 @ 2V, 100MHz
Capacitance Ratio Condition: C2/C8
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Voltage - Peak Reverse (Max): 18 V
Capacitance Ratio: 2.25
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2840+0.18 EUR
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BB814E6359HTMA1 BB814E6359HTMA1 Infineon Technologies INFNS16375-1.pdf?t.download=true&u=5oefqw Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 22.7pF @ 8V, 1MHz
Q @ Vr, F: 200 @ 2V, 100MHz
Capacitance Ratio Condition: C2/C8
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Voltage - Peak Reverse (Max): 18 V
Capacitance Ratio: 2.25
auf Bestellung 70000 Stücke:
Lieferzeit 10-14 Tag (e)
1893+0.26 EUR
Mindestbestellmenge: 1893
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IPB093N04LG IPB093N04LG Infineon Technologies INFNS16287-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 50A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2V @ 77µA
Supplier Device Package: PG-TO-263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
auf Bestellung 1985 Stücke:
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866+0.58 EUR
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IPB097N08N3G IPB097N08N3G Infineon Technologies INFN-S-A0001299547-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
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BTS409L1E3062ANTMA1 BTS409L1E3062ANTMA1 Infineon Technologies INFNS30248-1.pdf?t.download=true&u=5oefqw Description: AUTOMOTIVE HIGH SIDE SWITCH
Packaging: Bulk
Features: Auto Restart
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 160mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-5-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
Produkt ist nicht verfügbar
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S29GL512T12TFVV10 S29GL512T12TFVV10 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
auf Bestellung 1 Stücke:
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S29GL512T12TFVV20 S29GL512T12TFVV20 Infineon Technologies infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
auf Bestellung 1768 Stücke:
Lieferzeit 10-14 Tag (e)
2+17.39 EUR
10+16.16 EUR
25+15.66 EUR
91+14.96 EUR
182+14.59 EUR
273+14.37 EUR
546+14.01 EUR
1001+13.7 EUR
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S26KL512SDABHA020 S26KL512SDABHA020 Infineon Technologies Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f Description: IC FLASH 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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CY8C4146FNI-S443T CY8C4146FNI-S443T Infineon Technologies Infineon-PSOC_4_PSOC_4100S_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 64KB FLASH 35WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 35-XFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 35-WLCSP (2.11x2.6)
Number of I/O: 31
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ADM6992CXABT1 ADM6992CXABT1 Infineon Technologies Description: FIBER TO FAST ETHERNET CONVERTER
Packaging: Bulk
Package / Case: 64-LQFP
Function: Switch
Operating Temperature: 0°C ~ 115°C
Voltage - Supply: 3.135V ~ 3.465V
Protocol: Ethernet
Standards: 10/100 Base-FX/T/TX PHY
Supplier Device Package: PG-TQFP-64
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 6596 Stücke:
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89+5.42 EUR
Mindestbestellmenge: 89
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PMA7106XUMA1 PMA7106XUMA1 Infineon Technologies PMA71xx.pdf Description: RF TX IC ASK 315/434MHZ 38TFSOP
Packaging: Bulk
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 315MHz, 434MHz, 868MHz, 915MHz
Memory Size: 6KB Flash, 12KB ROM, 256 Byte RAM
Modulation or Protocol: ASK, FSK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.9V ~ 3.6V
Power - Output: 10dBm
Applications: Remote Control, Remote Metering
Data Rate (Max): 20kbps
Current - Transmitting: 17.1mA
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-38
DigiKey Programmable: Not Verified
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190+2.44 EUR
Mindestbestellmenge: 190
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SMBT3906SE6327 SMBT3906SE6327 Infineon Technologies INFNS09883-1.pdf?t.download=true&u=5oefqw Description: TRANS 2PNP DARL 40V 0.2A SOT-363
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP Darlington (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 330W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-363
Part Status: Active
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8510+0.062 EUR
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SMBT3906SH6327 Infineon Technologies INFNS19373-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT363-6-1
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
auf Bestellung 30000 Stücke:
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4351+0.12 EUR
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SMBTA92E6327 SMBTA92E6327 Infineon Technologies INFNS10822-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 360 mW
Produkt ist nicht verfügbar
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SMBTA92E6433 SMBTA92E6433 Infineon Technologies INFNS10822-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 360 mW
Produkt ist nicht verfügbar
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BSS80C BSS80C Infineon Technologies INFNS07914-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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IR2182S ir2181.pdf?fileId=5546d462533600a4015355c93cdd16ce
IR2182S
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SPI15N65C3 Infineon-SPI15N65C3-DS-v02_00-en.pdf?fileId=db3a30431689f4420116d3acc8fe0c5a
SPI15N65C3
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 9.4A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 675µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 400 Stücke:
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Anzahl Preis
166+2.9 EUR
Mindestbestellmenge: 166
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TLE4941PLUSCAAMA1 Infineon-TLE4941plusC_PB-PB-v01_01-EN.PDF?fileId=5546d4625607bd1301560cafae653a04&ack=t
TLE4941PLUSCAAMA1
Hersteller: Infineon Technologies
Description: MAG SWITCH SPEC PURP SSO-2-53
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-53
Output Type: Current Source
Mounting Type: Through Hole
Function: Special Purpose
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-53
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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CY14V101NA-BA45XI download
CY14V101NA-BA45XI
Hersteller: Infineon Technologies
Description: IC NVSRAM 1MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRFH5025TRPBF irfh5025pbf.pdf?fileId=5546d462533600a40153561acde51ea0
IRFH5025TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 3.8A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 5.7A, 10V
Power Dissipation (Max): 3.6W (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 5V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 50 V
Produkt ist nicht verfügbar
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IRFH5025TRPBF irfh5025pbf.pdf?fileId=5546d462533600a40153561acde51ea0
IRFH5025TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 3.8A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 5.7A, 10V
Power Dissipation (Max): 3.6W (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 5V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 50 V
auf Bestellung 366 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.58 EUR
10+4.69 EUR
100+3.79 EUR
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TD285N16KOFHPSA2 Infineon-TT285N16KOF-DS-v03_04-EN.pdf?fileId=db3a304412b407950112b42f7b4d4bc5
TD285N16KOFHPSA2
Hersteller: Infineon Technologies
Description: SCR MODULE 1600V 520A MODULE
Produkt ist nicht verfügbar
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IPF13N03LAG INFNS11986-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
auf Bestellung 25000 Stücke:
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IPP13N03LB G IPP13N03LB_G.pdf
IPP13N03LB G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 30A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1355 pF @ 15 V
Produkt ist nicht verfügbar
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IPS13N03LA G ipd13n03la_rev2.1_g.pdf
IPS13N03LA G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 30A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 30A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1043 pF @ 15 V
Produkt ist nicht verfügbar
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BTT60302ERAXUMA1 Infineon-BTT6030-2ERA-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a21fa44260d82
BTT60302ERAXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TDSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 32mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-31
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 7755 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.77 EUR
10+4.36 EUR
25+4.01 EUR
100+3.62 EUR
250+3.43 EUR
500+3.32 EUR
1000+3.23 EUR
Mindestbestellmenge: 4
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IPB027N10N5ATMA1 Infineon-IPB027N10N5-DS-v02_01-EN.pdf?fileId=5546d4624ad04ef9014adf44f3dd7c86
IPB027N10N5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 184µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 50 V
auf Bestellung 1020 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.67 EUR
10+4.08 EUR
100+3.64 EUR
Mindestbestellmenge: 4
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FP75R12KT4B16BOSA1 Infineon-FP75R12KT4-DS-v03_00-CN.pdf?fileId=db3a30433dd58def013dd99b7db3181f
FP75R12KT4B16BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 150A 385W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 385 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+162.87 EUR
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FP75R12KT4PBPSA1 Infineon-FP75R12KT4P-DS-v03_00-EN.pdf?fileId=5546d4625b3ca4ec015b57eb5fec0401
FP75R12KT4PBPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 150A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Produkt ist nicht verfügbar
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IPA65R600C6 INFNS28015-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO220-3-111
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Produkt ist nicht verfügbar
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IPA65R660CFDXKSA2 Infineon-IPA65R660CFD-DataSheet-v02_07-EN.pdf?fileId=5546d462727878c201727e85f6c15b38
IPA65R660CFDXKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 6A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
Power Dissipation (Max): 27.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
Produkt ist nicht verfügbar
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IPA65R099C6XKSA1 IPx65R099C6.pdf
IPA65R099C6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 38A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.8A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO220-3-111
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V
Produkt ist nicht verfügbar
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IRL3714TR Part_Number_Guide_Web.pdf
IRL3714TR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 36A TO220AB
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRL3715TR irl3715.pdf
IRL3715TR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 54A TO220AB
Produkt ist nicht verfügbar
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IRL3715TRL irl3715.pdf
IRL3715TRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 54A TO220AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRL3715TRR irl3715.pdf
IRL3715TRR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 54A TO220AB
Produkt ist nicht verfügbar
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BC848B-E6327 INFNS14907-1.pdf?t.download=true&u=5oefqw
BC848B-E6327
Hersteller: Infineon Technologies
Description: TRANS NPN 30V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
Produkt ist nicht verfügbar
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BC846SE6327 INFNS17743-1.pdf?t.download=true&u=5oefqw
BC846SE6327
Hersteller: Infineon Technologies
Description: BIPOLAR GEN PURPOSE TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT363-6-1
Part Status: Active
Produkt ist nicht verfügbar
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BCR133WH6327 INFNS17147-1.pdf?t.download=true&u=5oefqw
BCR133WH6327
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 130 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
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BCR133WE6327 INFNS11633-1.pdf?t.download=true&u=5oefqw
BCR133WE6327
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XMC1301T016F0008AAXUMA1 XMC1300.pdf
XMC1301T016F0008AAXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 8KB FLASH 16TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 11x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-16-8
Part Status: Obsolete
Number of I/O: 11
DigiKey Programmable: Not Verified
auf Bestellung 8500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
371+1.22 EUR
Mindestbestellmenge: 371
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XMC1100T016X0016AAXUMA1 XMC1100.pdf
XMC1100T016X0016AAXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 16TSSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2ED2109S06FXUMA1 Infineon-2ED2109-4-S06F-J-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016cb8d7493e29eb
2ED2109S06FXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-53
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.89 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
2ED2109S06FXUMA1 Infineon-2ED2109-4-S06F-J-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016cb8d7493e29eb
2ED2109S06FXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-53
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 4196 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.85 EUR
14+1.33 EUR
25+1.2 EUR
100+1.06 EUR
250+1 EUR
500+0.96 EUR
1000+0.92 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
2ED21064S06JXUMA1 Infineon-2ED2106-4-S06F-J-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d7402029e7
2ED21064S06JXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
High Side Voltage - Max (Bootstrap): 20 V
Supplier Device Package: PG-DSO-14
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.36 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
2ED21064S06JXUMA1 Infineon-2ED2106-4-S06F-J-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d7402029e7
2ED21064S06JXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
High Side Voltage - Max (Bootstrap): 20 V
Supplier Device Package: PG-DSO-14
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 4994 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.73 EUR
10+2 EUR
25+1.81 EUR
100+1.61 EUR
250+1.52 EUR
500+1.46 EUR
1000+1.41 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
2ED21091S06FXUMA1 Infineon-2ED21091S06F-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d7765529ff
2ED21091S06FXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
High Side Voltage - Max (Bootstrap): 675 V
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2ED21091S06FXUMA1 Infineon-2ED21091S06F-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d7765529ff
2ED21091S06FXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
High Side Voltage - Max (Bootstrap): 675 V
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
DigiKey Programmable: Not Verified
auf Bestellung 2430 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.85 EUR
14+1.33 EUR
25+1.2 EUR
100+1.06 EUR
250+1 EUR
500+0.96 EUR
1000+0.92 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
2ED2108S06FXUMA1 Infineon-2ED2108-4-S06F-J-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d752c029ef
2ED2108S06FXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-53
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.79 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
2ED2108S06FXUMA1 Infineon-2ED2108-4-S06F-J-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d752c029ef
2ED2108S06FXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-53
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 12186 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.85 EUR
14+1.33 EUR
25+1.2 EUR
100+1.06 EUR
250+1 EUR
500+0.96 EUR
1000+0.92 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
2ED21084S06JXUMA1 Infineon-2ED2108-4-S06F-J-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d752c029ef
2ED21084S06JXUMA1
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE GATE DRIVER 650V
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-14-49
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2ED21084S06JXUMA1 Infineon-2ED2108-4-S06F-J-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d752c029ef
2ED21084S06JXUMA1
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE GATE DRIVER 650V
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-14-49
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2ED21094S06JXUMA1 Infineon-2ED2109-4-S06F-J-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016cb8d7493e29eb
2ED21094S06JXUMA1
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE GATE DRIVER 650V
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-14-49
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2ED21094S06JXUMA1 Infineon-2ED2109-4-S06F-J-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016cb8d7493e29eb
2ED21094S06JXUMA1
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE GATE DRIVER 650V
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-14-49
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2242 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.12 EUR
10+2.8 EUR
25+2.64 EUR
100+2.25 EUR
250+2.12 EUR
500+1.85 EUR
1000+1.53 EUR
Mindestbestellmenge: 6
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SPP07N65C3IN Infineon-SPP_A_I07N65C3-DS-v01_91-en.pdf?fileId=db3a304412b407950112b42ea7e74a0b
SPP07N65C3IN
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2EDN8524RXUMA1 Infineon-2EDN752x-2EDN852x-DS--DS-v02_03-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727
2EDN8524RXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IGW75N60H3 INFNS17450-1.pdf?t.download=true&u=5oefqw
IGW75N60H3
Hersteller: Infineon Technologies
Description: IGBT WITHOUT ANTI-PARALLEL DIODE
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 31ns/265ns
Switching Energy: 3mJ (on), 1.7mJ (off)
Test Condition: 400V, 75A, 5.2Ohm, 15V
Gate Charge: 470 nC
Part Status: Active
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 428 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PEB2060NV4.5G
Hersteller: Infineon Technologies
Description: SICOFI CODEC FILTER
Packaging: Bulk
Part Status: Active
auf Bestellung 1900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+19.1 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
BB814E6327GR2 INFNS16375-1.pdf?t.download=true&u=5oefqw
BB814E6327GR2
Hersteller: Infineon Technologies
Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 22.7pF @ 8V, 1MHz
Q @ Vr, F: 200 @ 2V, 100MHz
Capacitance Ratio Condition: C2/C8
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Voltage - Peak Reverse (Max): 18 V
Capacitance Ratio: 2.25
auf Bestellung 23238 Stücke:
Lieferzeit 10-14 Tag (e)
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BB814E7801GR1HTSA1 INFNS16375-1.pdf?t.download=true&u=5oefqw
BB814E7801GR1HTSA1
Hersteller: Infineon Technologies
Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 22.7pF @ 8V, 1MHz
Q @ Vr, F: 200 @ 2V, 100MHz
Capacitance Ratio Condition: C2/C8
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Voltage - Peak Reverse (Max): 18 V
Capacitance Ratio: 2.25
auf Bestellung 60000 Stücke:
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2840+0.18 EUR
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BB814E6359HTMA1 INFNS16375-1.pdf?t.download=true&u=5oefqw
BB814E6359HTMA1
Hersteller: Infineon Technologies
Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 22.7pF @ 8V, 1MHz
Q @ Vr, F: 200 @ 2V, 100MHz
Capacitance Ratio Condition: C2/C8
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Voltage - Peak Reverse (Max): 18 V
Capacitance Ratio: 2.25
auf Bestellung 70000 Stücke:
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Anzahl Preis
1893+0.26 EUR
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IPB093N04LG INFNS16287-1.pdf?t.download=true&u=5oefqw
IPB093N04LG
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 50A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2V @ 77µA
Supplier Device Package: PG-TO-263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
auf Bestellung 1985 Stücke:
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Anzahl Preis
866+0.58 EUR
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IPB097N08N3G INFN-S-A0001299547-1.pdf?t.download=true&u=5oefqw
IPB097N08N3G
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
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BTS409L1E3062ANTMA1 INFNS30248-1.pdf?t.download=true&u=5oefqw
BTS409L1E3062ANTMA1
Hersteller: Infineon Technologies
Description: AUTOMOTIVE HIGH SIDE SWITCH
Packaging: Bulk
Features: Auto Restart
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 160mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-5-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
Produkt ist nicht verfügbar
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S29GL512T12TFVV10 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
S29GL512T12TFVV10
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S29GL512T12TFVV20 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
S29GL512T12TFVV20
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
auf Bestellung 1768 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+17.39 EUR
10+16.16 EUR
25+15.66 EUR
91+14.96 EUR
182+14.59 EUR
273+14.37 EUR
546+14.01 EUR
1001+13.7 EUR
Mindestbestellmenge: 2
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S26KL512SDABHA020 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f
S26KL512SDABHA020
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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CY8C4146FNI-S443T Infineon-PSOC_4_PSOC_4100S_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4146FNI-S443T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 35WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 35-XFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 35-WLCSP (2.11x2.6)
Number of I/O: 31
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ADM6992CXABT1
ADM6992CXABT1
Hersteller: Infineon Technologies
Description: FIBER TO FAST ETHERNET CONVERTER
Packaging: Bulk
Package / Case: 64-LQFP
Function: Switch
Operating Temperature: 0°C ~ 115°C
Voltage - Supply: 3.135V ~ 3.465V
Protocol: Ethernet
Standards: 10/100 Base-FX/T/TX PHY
Supplier Device Package: PG-TQFP-64
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 6596 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
89+5.42 EUR
Mindestbestellmenge: 89
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PMA7106XUMA1 PMA71xx.pdf
PMA7106XUMA1
Hersteller: Infineon Technologies
Description: RF TX IC ASK 315/434MHZ 38TFSOP
Packaging: Bulk
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 315MHz, 434MHz, 868MHz, 915MHz
Memory Size: 6KB Flash, 12KB ROM, 256 Byte RAM
Modulation or Protocol: ASK, FSK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.9V ~ 3.6V
Power - Output: 10dBm
Applications: Remote Control, Remote Metering
Data Rate (Max): 20kbps
Current - Transmitting: 17.1mA
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-38
DigiKey Programmable: Not Verified
auf Bestellung 36833 Stücke:
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Anzahl Preis
190+2.44 EUR
Mindestbestellmenge: 190
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SMBT3906SE6327 INFNS09883-1.pdf?t.download=true&u=5oefqw
SMBT3906SE6327
Hersteller: Infineon Technologies
Description: TRANS 2PNP DARL 40V 0.2A SOT-363
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP Darlington (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 330W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 51000 Stücke:
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Anzahl Preis
8510+0.062 EUR
Mindestbestellmenge: 8510
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SMBT3906SH6327 INFNS19373-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT363-6-1
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
auf Bestellung 30000 Stücke:
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Anzahl Preis
4351+0.12 EUR
Mindestbestellmenge: 4351
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SMBTA92E6327 INFNS10822-1.pdf?t.download=true&u=5oefqw
SMBTA92E6327
Hersteller: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 360 mW
Produkt ist nicht verfügbar
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SMBTA92E6433 INFNS10822-1.pdf?t.download=true&u=5oefqw
SMBTA92E6433
Hersteller: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 360 mW
Produkt ist nicht verfügbar
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BSS80C INFNS07914-1.pdf?t.download=true&u=5oefqw
BSS80C
Hersteller: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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