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BGS16MN14E6327XTSA1 BGS16MN14E6327XTSA1 Infineon Technologies BGS16MN14_v3+0.pdf?fileId=5546d46146d18cb40147207a5e3f02a2 Description: IC RF SWITCH SP6T 2.7GHZ 14TSNP
auf Bestellung 2663 Stücke:
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IRFR18N15DPBF-INF IRFR18N15DPBF-INF Infineon Technologies IRSDS10382-1.pdf?t.download=true&u=5oefqw Description: HEXFET SMPS POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: D-Pak
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
Produkt ist nicht verfügbar
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IRFR18N15DTRLP-INF IRFR18N15DTRLP-INF Infineon Technologies IRSDS10382-1.pdf?t.download=true&u=5oefqw Description: HEXFET SMPS POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: D-Pak
Part Status: Active
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
Produkt ist nicht verfügbar
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FS45MR12W1M1B11BOMA1 FS45MR12W1M1B11BOMA1 Infineon Technologies Infineon-FS45MR12W1M1_B11-DS-v02_00-EN.pdf?fileId=5546d46266f85d6301670cfae6a534bb Description: MOSFET 6N-CH 1200V AG-EASY1BM-2
Part Status: Obsolete
Supplier Device Package: AG-EASY1BM-2
Vgs(th) (Max) @ Id: 5.55V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V (Typ)
Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 6 N-Channel (3-Phase Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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24+182.64 EUR
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BSZ16DN25NS3GATMA1 BSZ16DN25NS3GATMA1 Infineon Technologies BSZ16DN25NS3+Rev2.1.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a30432ad629a6012b15a835541a6b Description: MOSFET N-CH 250V 10.9A 8TSDSON
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TSDSON-8
Vgs(th) (Max) @ Id: 4V @ 32µA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSZ16DN25NS3GATMA1 BSZ16DN25NS3GATMA1 Infineon Technologies BSZ16DN25NS3+Rev2.1.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a30432ad629a6012b15a835541a6b Description: MOSFET N-CH 250V 10.9A 8TSDSON
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TSDSON-8
Vgs(th) (Max) @ Id: 4V @ 32µA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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5+3.54 EUR
10+2.31 EUR
100+1.72 EUR
500+1.39 EUR
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BAS28E6327 BAS28E6327 Infineon Technologies INFNS10817-1.pdf?t.download=true&u=5oefqw Description: SWITCHING DIODE ARRAY
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT-143-3D
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 nA @ 75 V
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BAS28 Infineon Technologies Description: SWITCHING DIODE ARRAY
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 250mA (DC)
Supplier Device Package: SOT-143
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Produkt ist nicht verfügbar
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IPB60R099CPAATMA1 IPB60R099CPAATMA1 Infineon Technologies Infineon-IPB60R099CPA-DS-v02_01-en.pdf?folderId=db3a30431a5c32f2011a8084a04a6500&fileId=db3a304328c6bd5c0128ee28d90159e0&ack=t Description: MOSFET N-CH 600V 31A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 18A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPB60R099CPAATMA1 IPB60R099CPAATMA1 Infineon Technologies Infineon-IPB60R099CPA-DS-v02_01-en.pdf?folderId=db3a30431a5c32f2011a8084a04a6500&fileId=db3a304328c6bd5c0128ee28d90159e0&ack=t Description: MOSFET N-CH 600V 31A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 18A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
Qualification: AEC-Q101
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2+9.03 EUR
10+6.26 EUR
100+6.16 EUR
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IPI60R099CP Infineon Technologies Description: PFET, 31A I(D), 600V, 0.099OHM,
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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IPP60R099CP IPP60R099CP Infineon Technologies INFNS15861-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 31A TO220-3-1
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CY7C68015A-56PVXC CY7C68015A-56PVXC Infineon Technologies download Description: IC MCU USB PERIPH HI SPD 56SSOP
Packaging: Tube
Package / Case: 56-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: I2C, USB, USART
RAM Size: 16K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Controller Series: CY7C680xx
Program Memory Type: ROMless
Applications: USB Microcontroller
Core Processor: 8051
Supplier Device Package: 56-SSOP
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
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69+7.36 EUR
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CY7C68321C-56LFXC CY7C68321C-56LFXC Infineon Technologies CY7C68300C%2C301C%2C320C%2C321C.pdf Description: IC USB 2.0 BRIDGE AT2LP 56VQFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Function: Bridge, USB to ATA
Interface: ATA
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.15V ~ 3.45V
Current - Supply: 50mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 56-QFN (8x8)
DigiKey Programmable: Not Verified
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CY7C68321C-100AXC CY7C68321C-100AXC Infineon Technologies CY7C68300C%2C301C%2C320C%2C321C.pdf Description: IC USB 2.0 BRIDGE AT2LP 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Function: Bridge, USB to ATA
Interface: ATA
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.15V ~ 3.45V
Current - Supply: 50mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 100-TQFP (14x20)
DigiKey Programmable: Not Verified
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CY7C68016A-56LFXC CY7C68016A-56LFXC Infineon Technologies download description Description: IC MCU USB PERIPH HI SPD 56VQFN
Number of I/O: 26
Part Status: Obsolete
Supplier Device Package: 56-QFN (8x8)
Program Memory Type: ROMless
Controller Series: CY7C680xx
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C
RAM Size: 16K x 8
Interface: I2C, USB, USART
Mounting Type: Surface Mount
Package / Case: 56-VFQFN Exposed Pad
Packaging: Tube
DigiKey Programmable: Not Verified
Core Processor: 8051
Applications: USB Microcontroller
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29+17.05 EUR
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IRG4IBC30UDPBF-INF IRG4IBC30UDPBF-INF Infineon Technologies Description: COPACK IGBT W/ULTRAFAST SOFT REC
Packaging: Tube
Part Status: Active
Produkt ist nicht verfügbar
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AUIRF1405-INF AUIRF1405-INF Infineon Technologies IRSDS11819-1.pdf?t.download=true&u=5oefqw Description: AUTOMOTIVE HEXFET N CHANNEL
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 101A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5480 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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142+3.18 EUR
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BBY5103WE6327HTSA1 BBY5103WE6327HTSA1 Infineon Technologies BBY51.pdf Description: DIODE TUNING 7V 20MA SOD-323
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 3.7pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: PG-SOD323-3D
Voltage - Peak Reverse (Max): 7 V
Capacitance Ratio: 2.2
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13172+0.034 EUR
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BB669E7904HTSA1 BB669E7904HTSA1 Infineon Technologies bb669_bb689series.pdf Description: DIODE VARACTR 30V SGL PG-SOD323
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SOD323-3D
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 23.2
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BBY5603WE6327HTSA1 BBY5603WE6327HTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: DIODE VARACTR 10V SGL PG-SOD323
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 12.1pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C3
Supplier Device Package: PG-SOD323-3D
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 3.3
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BB535E7904 BB535E7904 Infineon Technologies INFNS15421-1.pdf?t.download=true&u=5oefqw Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.3pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SOD323-3D
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 9.8
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BB535E7908 BB535E7908 Infineon Technologies INFNS15421-1.pdf?t.download=true&u=5oefqw Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.3pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SOD323-3D
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 9.8
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BAT15099RE6327HTSA1 BAT15099RE6327HTSA1 Infineon Technologies Infineon-BAT15-099R-DS-v01_00-EN.pdf?fileId=5546d46265f064ff0166389632964e8c Description: DIODE SCHOTTKY 4V 100MW SOT143-4
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - Cross Over
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
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BAT15099RE6327HTSA1 BAT15099RE6327HTSA1 Infineon Technologies Infineon-BAT15-099R-DS-v01_00-EN.pdf?fileId=5546d46265f064ff0166389632964e8c Description: DIODE SCHOTTKY 4V 100MW SOT143-4
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - Cross Over
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
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9+2.15 EUR
14+1.34 EUR
100+0.89 EUR
500+0.69 EUR
1000+0.63 EUR
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TMOSP7052 TMOSP7052 Infineon Technologies INFNS14175-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL IGBT, 41A, 600V
Part Status: Active
Packaging: Bulk
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83+6.37 EUR
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IFX20002MBV33HTSA1 IFX20002MBV33HTSA1 Infineon Technologies IFX20002-Data-Sheet-10-Infineon.pdf?folderId=db3a30431f848401011fcbf221ff04c3&fileId=db3a30433d68e984013d82fb138a7932&ack=t Description: IC REG LINEAR 3.3V 30MA SCT595-5
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 30mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 170 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5-2
Voltage - Output (Min/Fixed): 3.3V
Control Features: Inhibit
Part Status: Obsolete
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.3V @ 20mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 5.2 mA
Produkt ist nicht verfügbar
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AUIRS2191STR AUIRS2191STR Infineon Technologies auirs2191s.pdf?fileId=5546d462533600a4015355bf77fe15bc Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 3.5A, 3.5A
Grade: Automotive
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE7189QKXUMA1 TLE7189QKXUMA1 Infineon Technologies Infineon-TLE7189QK-DS-v02_00-en.pdf?folderId=db3a30431ddc9372011e26863f92474e&fileId=db3a30432239cccd0122c1ca7b54599f&ack=t Description: IC MOTOR DRIVER 5.5V-28V 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 5.5V ~ 28V
Technology: Power MOSFET
Supplier Device Package: PG-LQFP-64-17
Motor Type - AC, DC: Brushless DC (BLDC), Brushed DC
Grade: Automotive
Produkt ist nicht verfügbar
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IGB15N60TATMA1 IGB15N60TATMA1 Infineon Technologies IGB15N60T+Rev2_4G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b428077f3d42 Description: IGBT TRENCH 600V 30A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench
Td (on/off) @ 25°C: 17ns/188ns
Switching Energy: 570µJ
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 130 W
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IGB15N60TATMA1 IGB15N60TATMA1 Infineon Technologies IGB15N60T+Rev2_4G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b428077f3d42 Description: IGBT TRENCH 600V 30A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench
Td (on/off) @ 25°C: 17ns/188ns
Switching Energy: 570µJ
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 130 W
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TLE4275G TLE4275G Infineon Technologies Infineon-TLE4275V33-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8ea6971fb1 Description: FIXED POSITIVE LDO REGULATOR
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 450mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
Packaging: Bulk
Current - Supply (Max): 22 mA
Protection Features: Antisaturation, Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 300mA
PSRR: 60dB (100Hz)
Part Status: Active
Control Features: Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TO263-5-1
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 220 µA
Output Configuration: Positive
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TLE4275D TLE4275D Infineon Technologies Infineon-TLE4275V33-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8ea6971fb1 Description: IC REG LIN 5V 450MA TO252-5-11
Current - Supply (Max): 22 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 300mA
PSRR: 60dB (100Hz)
Part Status: Active
Control Features: Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TO252-5-11
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 220 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 450mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Packaging: Bulk
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IRF3709STRLPBF-INF IRF3709STRLPBF-INF Infineon Technologies IRSDS10219-1.pdf?t.download=true&u=5oefqw Description: HEXFET SMPS POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 2672 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
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BC856S E6433 BC856S E6433 Infineon Technologies INFNS16381-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR GEN PURPOSE TRANSISTOR
Part Status: Active
Supplier Device Package: SOT-363
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Bulk
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BC856S E6327 Infineon Technologies INFNS16381-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR GEN PURPOSE TRANSISTOR
Part Status: Active
Supplier Device Package: SOT-363
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Bulk
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IRF7811AVTRPBF-1 IRF7811AVTRPBF-1 Infineon Technologies IRF7811AVPbF-1_11-20-13.pdf Description: MOSFET N-CH 30V 10.8A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1801 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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IRLML2803TRPBF-1 Infineon Technologies IRLML2803PbF-1_10-28-14.pdf Description: MOSFET N-CH 30V 1.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 910mA, 10V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Obsolete
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
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BSC090N03MSGXT BSC090N03MSGXT Infineon Technologies INFNS27233-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-5
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 32W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
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FS200R12KT4RPBPSA1 FS200R12KT4RPBPSA1 Infineon Technologies INFNS28545-1.pdf?t.download=true&u=5oefqw Description: IGBT MODULE
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IRF7455TRPBF-1 IRF7455TRPBF-1 Infineon Technologies IRF7455PbF-1_11-20-13.pdf Description: MOSFET N-CH 30V 15A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3480 pF @ 25 V
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BCX70GE6327 BCX70GE6327 Infineon Technologies INFNS11039-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 45V 0.1A SOT23
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
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BCX 70J E6327 BCX 70J E6327 Infineon Technologies INFNS11039-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 45V 0.1A SOT23
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BCX70JE6327 BCX70JE6327 Infineon Technologies INFNS11039-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 45V 0.1A SOT23
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BCX 70H E6327 BCX 70H E6327 Infineon Technologies INFNS11039-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 45V 0.1A SOT23
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BCX70JE6433 BCX70JE6433 Infineon Technologies INFNS11039-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 45V 0.1A SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23
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BCX70HE6327 BCX70HE6327 Infineon Technologies INFNS11039-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 45V 0.1A SOT23
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
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IPB60R170CFD7ATMA1 IPB60R170CFD7ATMA1 Infineon Technologies Infineon-IPB60R170CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb297b1bd19ca Description: MOSFET N-CH 600V 14A TO263-3-2
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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IPB60R145CFD7ATMA1 IPB60R145CFD7ATMA1 Infineon Technologies Infineon-IPB60R145CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb2979db419c7 Description: MOSFET N-CH 600V 16A TO263-3-2
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 6.8A, 10V
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IPB60R125CFD7ATMA1 IPB60R125CFD7ATMA1 Infineon Technologies Infineon-IPB60R125CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb28e6de719c4 Description: MOSFET N-CH 600V 18A TO263-3
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Power Dissipation (Max): 92W (Tc)
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IPB60R105CFD7ATMA1 IPB60R105CFD7ATMA1 Infineon Technologies Infineon-IPB60R105CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb24e552a198a Description: MOSFET N-CH 600V 21A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 9.3A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 470µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1752 pF @ 400 V
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BSP299L6327 Infineon Technologies Description: SMALL-SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
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BUZ101SL BUZ101SL Infineon Technologies INFNS23686-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±14V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 2V @ 40µA
Power Dissipation (Max): 55W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
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BUZ101L BUZ101L Infineon Technologies INFNS01258-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
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BUZ102SL BUZ102SL Infineon Technologies INFNS23684-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±14V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 90µA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
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BUZ102SL-E3045A BUZ102SL-E3045A Infineon Technologies INFNS23684-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Vgs (Max): ±14V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 2V @ 90µA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Packaging: Bulk
Produkt ist nicht verfügbar
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BUZ100S-E3045A BUZ100S-E3045A Infineon Technologies INFNS23689-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
auf Bestellung 28500 Stücke:
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373+1.19 EUR
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BUZ100S BUZ100S Infineon Technologies INFNS23689-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 55A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 130µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2375 pF @ 25 V
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SPA06N60C3IN SPA06N60C3IN Infineon Technologies Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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SPP06N60C3 SPP06N60C3 Infineon Technologies Infineon-SPP06N60C3-DS-v01_04-en.pdf?fileId=db3a304412b407950112b42e2a60496d Description: N-CHANNEL POWER MOSFET
Vgs(th) (Max) @ Id: 3.9V @ 260µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-1
Packaging: Bulk
Produkt ist nicht verfügbar
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BGS16MN14E6327XTSA1 BGS16MN14_v3+0.pdf?fileId=5546d46146d18cb40147207a5e3f02a2
BGS16MN14E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SP6T 2.7GHZ 14TSNP
auf Bestellung 2663 Stücke:
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IRFR18N15DPBF-INF IRSDS10382-1.pdf?t.download=true&u=5oefqw
IRFR18N15DPBF-INF
Hersteller: Infineon Technologies
Description: HEXFET SMPS POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: D-Pak
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
Produkt ist nicht verfügbar
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IRFR18N15DTRLP-INF IRSDS10382-1.pdf?t.download=true&u=5oefqw
IRFR18N15DTRLP-INF
Hersteller: Infineon Technologies
Description: HEXFET SMPS POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: D-Pak
Part Status: Active
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
Produkt ist nicht verfügbar
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FS45MR12W1M1B11BOMA1 Infineon-FS45MR12W1M1_B11-DS-v02_00-EN.pdf?fileId=5546d46266f85d6301670cfae6a534bb
FS45MR12W1M1B11BOMA1
Hersteller: Infineon Technologies
Description: MOSFET 6N-CH 1200V AG-EASY1BM-2
Part Status: Obsolete
Supplier Device Package: AG-EASY1BM-2
Vgs(th) (Max) @ Id: 5.55V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V (Typ)
Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 6 N-Channel (3-Phase Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
auf Bestellung 82 Stücke:
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AnzahlPreis
1+208 EUR
24+182.64 EUR
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BSZ16DN25NS3GATMA1 BSZ16DN25NS3+Rev2.1.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a30432ad629a6012b15a835541a6b
BSZ16DN25NS3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 10.9A 8TSDSON
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TSDSON-8
Vgs(th) (Max) @ Id: 4V @ 32µA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSZ16DN25NS3GATMA1 BSZ16DN25NS3+Rev2.1.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a30432ad629a6012b15a835541a6b
BSZ16DN25NS3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 10.9A 8TSDSON
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TSDSON-8
Vgs(th) (Max) @ Id: 4V @ 32µA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 3724 Stücke:
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AnzahlPreis
5+3.54 EUR
10+2.31 EUR
100+1.72 EUR
500+1.39 EUR
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BAS28E6327 INFNS10817-1.pdf?t.download=true&u=5oefqw
BAS28E6327
Hersteller: Infineon Technologies
Description: SWITCHING DIODE ARRAY
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT-143-3D
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 nA @ 75 V
Produkt ist nicht verfügbar
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BAS28
Hersteller: Infineon Technologies
Description: SWITCHING DIODE ARRAY
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 250mA (DC)
Supplier Device Package: SOT-143
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Produkt ist nicht verfügbar
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IPB60R099CPAATMA1 Infineon-IPB60R099CPA-DS-v02_01-en.pdf?folderId=db3a30431a5c32f2011a8084a04a6500&fileId=db3a304328c6bd5c0128ee28d90159e0&ack=t
IPB60R099CPAATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 31A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 18A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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IPB60R099CPAATMA1 Infineon-IPB60R099CPA-DS-v02_01-en.pdf?folderId=db3a30431a5c32f2011a8084a04a6500&fileId=db3a304328c6bd5c0128ee28d90159e0&ack=t
IPB60R099CPAATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 31A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 18A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
Qualification: AEC-Q101
auf Bestellung 270 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+9.03 EUR
10+6.26 EUR
100+6.16 EUR
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IPI60R099CP
Hersteller: Infineon Technologies
Description: PFET, 31A I(D), 600V, 0.099OHM,
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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IPP60R099CP INFNS15861-1.pdf?t.download=true&u=5oefqw
IPP60R099CP
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 31A TO220-3-1
Produkt ist nicht verfügbar
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CY7C68015A-56PVXC download
CY7C68015A-56PVXC
Hersteller: Infineon Technologies
Description: IC MCU USB PERIPH HI SPD 56SSOP
Packaging: Tube
Package / Case: 56-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: I2C, USB, USART
RAM Size: 16K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Controller Series: CY7C680xx
Program Memory Type: ROMless
Applications: USB Microcontroller
Core Processor: 8051
Supplier Device Package: 56-SSOP
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
auf Bestellung 4969 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
69+7.36 EUR
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CY7C68321C-56LFXC CY7C68300C%2C301C%2C320C%2C321C.pdf
CY7C68321C-56LFXC
Hersteller: Infineon Technologies
Description: IC USB 2.0 BRIDGE AT2LP 56VQFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Function: Bridge, USB to ATA
Interface: ATA
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.15V ~ 3.45V
Current - Supply: 50mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 56-QFN (8x8)
DigiKey Programmable: Not Verified
auf Bestellung 2601 Stücke:
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AnzahlPreis
44+11.34 EUR
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CY7C68321C-100AXC CY7C68300C%2C301C%2C320C%2C321C.pdf
CY7C68321C-100AXC
Hersteller: Infineon Technologies
Description: IC USB 2.0 BRIDGE AT2LP 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Function: Bridge, USB to ATA
Interface: ATA
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.15V ~ 3.45V
Current - Supply: 50mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 100-TQFP (14x20)
DigiKey Programmable: Not Verified
auf Bestellung 4376 Stücke:
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AnzahlPreis
38+13.01 EUR
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CY7C68016A-56LFXC description download
CY7C68016A-56LFXC
Hersteller: Infineon Technologies
Description: IC MCU USB PERIPH HI SPD 56VQFN
Number of I/O: 26
Part Status: Obsolete
Supplier Device Package: 56-QFN (8x8)
Program Memory Type: ROMless
Controller Series: CY7C680xx
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C
RAM Size: 16K x 8
Interface: I2C, USB, USART
Mounting Type: Surface Mount
Package / Case: 56-VFQFN Exposed Pad
Packaging: Tube
DigiKey Programmable: Not Verified
Core Processor: 8051
Applications: USB Microcontroller
auf Bestellung 4125 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
29+17.05 EUR
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IRG4IBC30UDPBF-INF
IRG4IBC30UDPBF-INF
Hersteller: Infineon Technologies
Description: COPACK IGBT W/ULTRAFAST SOFT REC
Packaging: Tube
Part Status: Active
Produkt ist nicht verfügbar
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AUIRF1405-INF IRSDS11819-1.pdf?t.download=true&u=5oefqw
AUIRF1405-INF
Hersteller: Infineon Technologies
Description: AUTOMOTIVE HEXFET N CHANNEL
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 101A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5480 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 22100 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
142+3.18 EUR
Mindestbestellmenge: 142 Stücke
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BBY5103WE6327HTSA1 BBY51.pdf
BBY5103WE6327HTSA1
Hersteller: Infineon Technologies
Description: DIODE TUNING 7V 20MA SOD-323
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 3.7pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: PG-SOD323-3D
Voltage - Peak Reverse (Max): 7 V
Capacitance Ratio: 2.2
auf Bestellung 66006 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
13172+0.034 EUR
Mindestbestellmenge: 13172 Stücke
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BB669E7904HTSA1 bb669_bb689series.pdf
BB669E7904HTSA1
Hersteller: Infineon Technologies
Description: DIODE VARACTR 30V SGL PG-SOD323
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SOD323-3D
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 23.2
auf Bestellung 993500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3545+0.12 EUR
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BBY5603WE6327HTSA1 fundamentals-of-power-semiconductors
BBY5603WE6327HTSA1
Hersteller: Infineon Technologies
Description: DIODE VARACTR 10V SGL PG-SOD323
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 12.1pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C3
Supplier Device Package: PG-SOD323-3D
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 3.3
auf Bestellung 110484 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1288+0.35 EUR
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BB535E7904 INFNS15421-1.pdf?t.download=true&u=5oefqw
BB535E7904
Hersteller: Infineon Technologies
Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.3pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SOD323-3D
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 9.8
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6000+0.083 EUR
Mindestbestellmenge: 6000 Stücke
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BB535E7908 INFNS15421-1.pdf?t.download=true&u=5oefqw
BB535E7908
Hersteller: Infineon Technologies
Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.3pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SOD323-3D
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 9.8
Produkt ist nicht verfügbar
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BAT15099RE6327HTSA1 Infineon-BAT15-099R-DS-v01_00-EN.pdf?fileId=5546d46265f064ff0166389632964e8c
BAT15099RE6327HTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 4V 100MW SOT143-4
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - Cross Over
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.55 EUR
6000+0.51 EUR
Mindestbestellmenge: 3000 Stücke
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BAT15099RE6327HTSA1 Infineon-BAT15-099R-DS-v01_00-EN.pdf?fileId=5546d46265f064ff0166389632964e8c
BAT15099RE6327HTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 4V 100MW SOT143-4
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - Cross Over
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
auf Bestellung 6102 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
9+2.15 EUR
14+1.34 EUR
100+0.89 EUR
500+0.69 EUR
1000+0.63 EUR
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TMOSP7052 INFNS14175-1.pdf?t.download=true&u=5oefqw
TMOSP7052
Hersteller: Infineon Technologies
Description: N-CHANNEL IGBT, 41A, 600V
Part Status: Active
Packaging: Bulk
auf Bestellung 120 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
83+6.37 EUR
Mindestbestellmenge: 83 Stücke
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IFX20002MBV33HTSA1 IFX20002-Data-Sheet-10-Infineon.pdf?folderId=db3a30431f848401011fcbf221ff04c3&fileId=db3a30433d68e984013d82fb138a7932&ack=t
IFX20002MBV33HTSA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 3.3V 30MA SCT595-5
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 30mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 170 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5-2
Voltage - Output (Min/Fixed): 3.3V
Control Features: Inhibit
Part Status: Obsolete
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.3V @ 20mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 5.2 mA
Produkt ist nicht verfügbar
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AUIRS2191STR auirs2191s.pdf?fileId=5546d462533600a4015355bf77fe15bc
AUIRS2191STR
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 3.5A, 3.5A
Grade: Automotive
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE7189QKXUMA1 Infineon-TLE7189QK-DS-v02_00-en.pdf?folderId=db3a30431ddc9372011e26863f92474e&fileId=db3a30432239cccd0122c1ca7b54599f&ack=t
TLE7189QKXUMA1
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 5.5V-28V 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 5.5V ~ 28V
Technology: Power MOSFET
Supplier Device Package: PG-LQFP-64-17
Motor Type - AC, DC: Brushless DC (BLDC), Brushed DC
Grade: Automotive
Produkt ist nicht verfügbar
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IGB15N60TATMA1 IGB15N60T+Rev2_4G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b428077f3d42
IGB15N60TATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 30A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench
Td (on/off) @ 25°C: 17ns/188ns
Switching Energy: 570µJ
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 130 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1000+1.18 EUR
Mindestbestellmenge: 1000 Stücke
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IGB15N60TATMA1 IGB15N60T+Rev2_4G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b428077f3d42
IGB15N60TATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 30A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench
Td (on/off) @ 25°C: 17ns/188ns
Switching Energy: 570µJ
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 130 W
auf Bestellung 1057 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5+3.68 EUR
10+2.36 EUR
100+1.61 EUR
500+1.29 EUR
Mindestbestellmenge: 5 Stücke
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TLE4275G Infineon-TLE4275V33-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8ea6971fb1
TLE4275G
Hersteller: Infineon Technologies
Description: FIXED POSITIVE LDO REGULATOR
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 450mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
Packaging: Bulk
Current - Supply (Max): 22 mA
Protection Features: Antisaturation, Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 300mA
PSRR: 60dB (100Hz)
Part Status: Active
Control Features: Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TO263-5-1
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 220 µA
Output Configuration: Positive
Produkt ist nicht verfügbar
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TLE4275D Infineon-TLE4275V33-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8ea6971fb1
TLE4275D
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 450MA TO252-5-11
Current - Supply (Max): 22 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 300mA
PSRR: 60dB (100Hz)
Part Status: Active
Control Features: Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TO252-5-11
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 220 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 450mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Packaging: Bulk
Produkt ist nicht verfügbar
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IRF3709STRLPBF-INF IRSDS10219-1.pdf?t.download=true&u=5oefqw
IRF3709STRLPBF-INF
Hersteller: Infineon Technologies
Description: HEXFET SMPS POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 2672 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Produkt ist nicht verfügbar
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BC856S E6433 INFNS16381-1.pdf?t.download=true&u=5oefqw
BC856S E6433
Hersteller: Infineon Technologies
Description: BIPOLAR GEN PURPOSE TRANSISTOR
Part Status: Active
Supplier Device Package: SOT-363
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Bulk
Produkt ist nicht verfügbar
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BC856S E6327 INFNS16381-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: BIPOLAR GEN PURPOSE TRANSISTOR
Part Status: Active
Supplier Device Package: SOT-363
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Bulk
Produkt ist nicht verfügbar
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IRF7811AVTRPBF-1 IRF7811AVPbF-1_11-20-13.pdf
IRF7811AVTRPBF-1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 10.8A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1801 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRLML2803TRPBF-1 IRLML2803PbF-1_10-28-14.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 1.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 910mA, 10V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Obsolete
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
Produkt ist nicht verfügbar
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BSC090N03MSGXT INFNS27233-1.pdf?t.download=true&u=5oefqw
BSC090N03MSGXT
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-5
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 32W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
auf Bestellung 3649 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1154+0.42 EUR
Mindestbestellmenge: 1154 Stücke
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FS200R12KT4RPBPSA1 INFNS28545-1.pdf?t.download=true&u=5oefqw
FS200R12KT4RPBPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 2 Stücke
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IRF7455TRPBF-1 IRF7455PbF-1_11-20-13.pdf
IRF7455TRPBF-1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 15A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3480 pF @ 25 V
Produkt ist nicht verfügbar
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BCX70GE6327 INFNS11039-1.pdf?t.download=true&u=5oefqw
BCX70GE6327
Hersteller: Infineon Technologies
Description: TRANS NPN 45V 0.1A SOT23
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
auf Bestellung 243000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7397+0.067 EUR
Mindestbestellmenge: 7397 Stücke
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BCX 70J E6327 INFNS11039-1.pdf?t.download=true&u=5oefqw
BCX 70J E6327
Hersteller: Infineon Technologies
Description: TRANS NPN 45V 0.1A SOT23
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8013+0.064 EUR
Mindestbestellmenge: 8013 Stücke
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BCX70JE6327 INFNS11039-1.pdf?t.download=true&u=5oefqw
BCX70JE6327
Hersteller: Infineon Technologies
Description: TRANS NPN 45V 0.1A SOT23
auf Bestellung 22700 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8013+0.064 EUR
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BCX 70H E6327 INFNS11039-1.pdf?t.download=true&u=5oefqw
BCX 70H E6327
Hersteller: Infineon Technologies
Description: TRANS NPN 45V 0.1A SOT23
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8013+0.064 EUR
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BCX70JE6433 INFNS11039-1.pdf?t.download=true&u=5oefqw
BCX70JE6433
Hersteller: Infineon Technologies
Description: TRANS NPN 45V 0.1A SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7397+0.067 EUR
Mindestbestellmenge: 7397 Stücke
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BCX70HE6327 INFNS11039-1.pdf?t.download=true&u=5oefqw
BCX70HE6327
Hersteller: Infineon Technologies
Description: TRANS NPN 45V 0.1A SOT23
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
auf Bestellung 71820 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7397+0.067 EUR
Mindestbestellmenge: 7397 Stücke
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IPB60R170CFD7ATMA1 Infineon-IPB60R170CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb297b1bd19ca
IPB60R170CFD7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 14A TO263-3-2
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1000+2.27 EUR
Mindestbestellmenge: 1000 Stücke
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IPB60R145CFD7ATMA1 Infineon-IPB60R145CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb2979db419c7
IPB60R145CFD7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 16A TO263-3-2
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 6.8A, 10V
Produkt ist nicht verfügbar
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IPB60R125CFD7ATMA1 Infineon-IPB60R125CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb28e6de719c4
IPB60R125CFD7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 18A TO263-3
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Power Dissipation (Max): 92W (Tc)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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IPB60R105CFD7ATMA1 Infineon-IPB60R105CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb24e552a198a
IPB60R105CFD7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 21A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 9.3A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 470µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1752 pF @ 400 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1000+3.33 EUR
Mindestbestellmenge: 1000 Stücke
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BSP299L6327
Hersteller: Infineon Technologies
Description: SMALL-SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Produkt ist nicht verfügbar
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BUZ101SL INFNS23686-1.pdf?t.download=true&u=5oefqw
BUZ101SL
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±14V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 2V @ 40µA
Power Dissipation (Max): 55W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Produkt ist nicht verfügbar
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BUZ101L INFNS01258-1.pdf?t.download=true&u=5oefqw
BUZ101L
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
auf Bestellung 5075 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
709+0.64 EUR
Mindestbestellmenge: 709 Stücke
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BUZ102SL INFNS23684-1.pdf?t.download=true&u=5oefqw
BUZ102SL
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±14V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 90µA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Produkt ist nicht verfügbar
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BUZ102SL-E3045A INFNS23684-1.pdf?t.download=true&u=5oefqw
BUZ102SL-E3045A
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Vgs (Max): ±14V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 2V @ 90µA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Packaging: Bulk
Produkt ist nicht verfügbar
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BUZ100S-E3045A INFNS23689-1.pdf?t.download=true&u=5oefqw
BUZ100S-E3045A
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
auf Bestellung 28500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
373+1.19 EUR
Mindestbestellmenge: 373 Stücke
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BUZ100S INFNS23689-1.pdf?t.download=true&u=5oefqw
BUZ100S
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 55A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 130µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2375 pF @ 25 V
auf Bestellung 2034 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
373+1.19 EUR
Mindestbestellmenge: 373 Stücke
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SPA06N60C3IN
SPA06N60C3IN
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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SPP06N60C3 Infineon-SPP06N60C3-DS-v01_04-en.pdf?fileId=db3a304412b407950112b42e2a60496d
SPP06N60C3
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Vgs(th) (Max) @ Id: 3.9V @ 260µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-1
Packaging: Bulk
Produkt ist nicht verfügbar
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