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SAF-XC164CM-16F40FBA SAF-XC164CM-16F40FBA Infineon Technologies INFNS10522-1.pdf?t.download=true&u=5oefqw Description: LEGACY 16 BIT FLASH MICROCONTROL
DigiKey Programmable: Not Verified
Number of I/O: 47
Part Status: Active
Supplier Device Package: PG-LQFP-64-4
Peripherals: PWM, WDT
Connectivity: ASC, CANbus, SPI, SSC, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 14x8/10b SAR
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 8K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Bulk
Produkt ist nicht verfügbar
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IPS70R1K4CEAKMA1 IPS70R1K4CEAKMA1 Infineon Technologies Infineon-IPD70R1K4CE-DS-v02_00-EN.pdf?fileId=5546d462533600a40153a2a2125c7af1 Description: MOSFET N-CH 700V 5.4A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
Produkt ist nicht verfügbar
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IPS7071GTRPBF Infineon Technologies IPS7071GPbF_6-24-07.pdf Description: IC PWR SWITCH N-CHANNEL 1:1 8SO
Features: Auto Restart
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 35V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Part Status: Obsolete
Produkt ist nicht verfügbar
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AUIPS7121R AUIPS7121R Infineon Technologies auips7121.pdf?fileId=5546d462533600a4015355a7d1721328 Description: IC PWR DRIVER N-CHANNEL 1:1 DPAK
Packaging: Tube
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Output Configuration: High Side
Rds On (Typ): 24mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-5
Fault Protection: Current Limiting (Fixed), Over Temperature
Produkt ist nicht verfügbar
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BAW 79D E6327 BAW 79D E6327 Infineon Technologies INFNS10746-1.pdf?t.download=true&u=5oefqw Description: SWITCHING AND RECTIFIER DIODES
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PG-SOT89
Current - Average Rectified (Io) (per Diode): 1A (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 1 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Bulk
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PEF2026T-PV1.1 Infineon Technologies Description: ISDN HIGH VOLTAGE POWER CONTROLL
Packaging: Bulk
Part Status: Active
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AUIRFR5305TR AUIRFR5305TR Infineon Technologies auirfr5305.pdf?fileId=5546d462533600a4015355b5cb911494 Description: MOSFET P-CH 55V 31A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Part Status: Obsolete
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Qualification: AEC-Q101
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AUIRFR5305TR AUIRFR5305TR Infineon Technologies auirfr5305.pdf?fileId=5546d462533600a4015355b5cb911494 Description: MOSFET P-CH 55V 31A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Part Status: Obsolete
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Qualification: AEC-Q101
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TLE4935LE6433HAXA1 Infineon Technologies Description: TLE4935L - HALL EFFECT SWITCHE
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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IPI80N06S2L11AKSA2 IPI80N06S2L11AKSA2 Infineon Technologies IPx80N06S2L-11.pdf Description: MOSFET N-CH 55V 80A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 40A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 2V @ 93µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 25 V
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IPB80N06S2LH5ATMA4 IPB80N06S2LH5ATMA4 Infineon Technologies IPB%2CIPP80N06S2L-H5.pdf Description: MOSFET N-CH 55V 80A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPI80N06S2L05AKSA2 IPI80N06S2L05AKSA2 Infineon Technologies IPx80N06S2L-05.pdf Description: MOSFET N-CH 55V 80A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
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IPB17N25S3100ATMA1 IPB17N25S3100ATMA1 Infineon Technologies Infineon-IPP_B17N25S3_100-DS-v01_01-EN.pdf?fileId=db3a30433b92f0e8013b937c398a014b Description: MOSFET N-CH 250V 17A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 54µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Qualification: AEC-Q101
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IPB17N25S3100ATMA1 IPB17N25S3100ATMA1 Infineon Technologies Infineon-IPP_B17N25S3_100-DS-v01_01-EN.pdf?fileId=db3a30433b92f0e8013b937c398a014b Description: MOSFET N-CH 250V 17A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 54µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Qualification: AEC-Q101
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BSC882N03LSG Infineon Technologies INFNS16215-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 15 V
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BSC882N03LS G BSC882N03LS G Infineon Technologies INFNS16215-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 15 V
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BSC882N03MSG BSC882N03MSG Infineon Technologies INFNS16215-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
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EVAL600W12VLLCC7DTOBO1 Infineon Technologies Description: EVAL BOARD FOR ICE2QR2280Z
Packaging: Bulk
Voltage - Output: 12V
Voltage - Input: 350V ~ 410V
Current - Output: 50A
Contents: Board(s)
Frequency - Switching: 150kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: ICE2QR2280Z
Supplied Contents: Board(s)
Main Purpose: DC/DC Converter
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Power - Output: 600W
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SPA11N65C3 SPA11N65C3 Infineon Technologies Infineon-SPP_A_I11N65C3-DS-v02_91-en.pdf?fileId=db3a3043163797a6011637d98e5e0049 Description: MOSFET N-CH 650V 11A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
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MB89193PF-G-529-ER-RE1 Infineon Technologies ProductGuide_2008.1.pdf Description: IC MCU 8BIT 8KB MROM 28SOP
Program Memory Type: Mask ROM
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 256 x 8
Program Memory Size: 8KB (8K x 8)
Speed: 4.2MHz
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 16
Part Status: Obsolete
Supplier Device Package: 28-SOP
Peripherals: POR, WDT
Connectivity: Serial I/O
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Core Size: 8-Bit
Core Processor: F²MC-8L
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MB89613RPF-G-524-BNDE1 Infineon Technologies Description: IC MCU 8BIT 8KB MROM 64QFP
DigiKey Programmable: Not Verified
Number of I/O: 53
Part Status: Obsolete
Supplier Device Package: 64-QFP (14x20)
Peripherals: POR, PWM, WDT
Core Size: 8-Bit
Core Processor: F²MC-8L
Program Memory Type: Mask ROM
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 256 x 8
Program Memory Size: 8KB (8K x 8)
Speed: 10MHz
Mounting Type: Surface Mount
Package / Case: 64-BQFP
Packaging: Tray
Connectivity: Serial I/O
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Produkt ist nicht verfügbar
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TLF35584QKVS1XUMA2 TLF35584QKVS1XUMA2 Infineon Technologies Infineon-TLF35584QV-ProductOverview-DataSheet-v01_00-EN.pdf?fileId=5546d46279cccfdb0179ce150fc81cbf Description: IC REG AUTO APPL 1OUT LQFP64-18
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Voltage - Output: 5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3V ~ 40V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Power Supply, Automotive Applications
Supplier Device Package: PG-LQFP-64-18
Part Status: Active
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TLF35584QKVS1XUMA2 TLF35584QKVS1XUMA2 Infineon Technologies Infineon-TLF35584QV-ProductOverview-DataSheet-v01_00-EN.pdf?fileId=5546d46279cccfdb0179ce150fc81cbf Description: IC REG AUTO APPL 1OUT LQFP64-18
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP Exposed Pad
Voltage - Output: 5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3V ~ 40V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Power Supply, Automotive Applications
Supplier Device Package: PG-LQFP-64-18
Part Status: Active
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IRG4BC30SPBF-INF IRG4BC30SPBF-INF Infineon Technologies IRSDS11001-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 34A TO-220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Part Status: Active
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 100 W
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BAR6304WH6327XTSA1 BAR6304WH6327XTSA1 Infineon Technologies INFNS15694-1.pdf?t.download=true&u=5oefqw Description: RF DIODE PIN 50V 250MW PG-SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT323
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
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BAR6304WH6327XTSA1 BAR6304WH6327XTSA1 Infineon Technologies INFNS15694-1.pdf?t.download=true&u=5oefqw Description: RF DIODE PIN 50V 250MW PG-SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT323
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Produkt ist nicht verfügbar
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SPI07N60C3XKSA1 SPI07N60C3XKSA1 Infineon Technologies Infineon-SPP_A_I07N60C3-DS-v03_02-en%5B1%5D.pdf?fileId=db3a304412b407950112b42de18b490c Description: MOSFET N-CH 600V 7.3A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
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IKD04N60RAATMA1 IKD04N60RAATMA1 Infineon Technologies IKD04N60RA.pdf Description: IGBT TRENCH 600V 8A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 43 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench
Td (on/off) @ 25°C: 14ns/146ns
Switching Energy: 90µJ (on), 150µJ (off)
Test Condition: 400V, 4A, 43Ohm, 15V
Gate Charge: 27 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 75 W
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XC2336A56F80LAAFXUMA1 XC2336A56F80LAAFXUMA1 Infineon Technologies XC2336A_v2.1_2011-07.pdf Description: IC MCU 16/32BIT 448KB FLASH
Produkt ist nicht verfügbar
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XC2336A72F80LRABHXUMA1 XC2336A72F80LRABHXUMA1 Infineon Technologies Description: IC MCU 16BIT 64LQFP
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XC2336A56F80LAAHXUMA1 XC2336A56F80LAAHXUMA1 Infineon Technologies XC2336A_v2.1_2011-07.pdf Description: IC MCU 16BIT 64LQFP
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IRS2183STRPBF IRS2183STRPBF Infineon Technologies irs2183.pdf?fileId=5546d462533600a401535676d20c27d8 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 40ns, 20ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Inverting, Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRS2183STRPBF IRS2183STRPBF Infineon Technologies irs2183.pdf?fileId=5546d462533600a401535676d20c27d8 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 40ns, 20ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Inverting, Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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6+3.69 EUR
10+2.71 EUR
25+2.48 EUR
100+2.21 EUR
250+2.08 EUR
500+2.01 EUR
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IRF60SC241ARMA1 IRF60SC241ARMA1 Infineon Technologies Infineon-IRF60SC241-DataSheet-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b533fb9af0ce7 Description: MOSFET N-CH 60V 360A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 2.4W (Ta), 417W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 388 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 30 V
Produkt ist nicht verfügbar
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IPI045N10N3 G Infineon Technologies INFN-S-A0004848105-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO262-3-1
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 137A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Packaging: Bulk
Produkt ist nicht verfügbar
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SP373-23-106-0 Infineon Technologies Description: TIRE PRESSURE SENSOR
auf Bestellung 2000 Stücke:
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89+6.2 EUR
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IRF7416TRPBF-1 IRF7416TRPBF-1 Infineon Technologies IRF7416PbF-1_11-19-13.pdf Description: MOSFET P-CH 30V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 5.6A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.04V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
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ICE2PCS02GFUMA1 ICE2PCS02GFUMA1 Infineon Technologies ICE2PCS02_G_2010-03-22.pdf Description: IC PFC CTRLR CCM 65KHZ 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 25V
Frequency - Switching: 65kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
Current - Startup: 450 µA
Produkt ist nicht verfügbar
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2EDF7235KXUMA1 2EDF7235KXUMA1 Infineon Technologies Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057 Description: IC GATE DRVR HALF-BRIDG TFLGA-13
Packaging: Tape & Reel (TR)
Package / Case: 13-TFLGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TFLGA-13-1
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2EDF7235KXUMA1 2EDF7235KXUMA1 Infineon Technologies Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057 Description: IC GATE DRVR HALF-BRIDG TFLGA-13
Packaging: Cut Tape (CT)
Package / Case: 13-TFLGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TFLGA-13-1
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2EDF7275KXUMA1 2EDF7275KXUMA1 Infineon Technologies Infineon-2EDF7175F-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163b09026be3060 Description: IC GATE DRVR HALF-BRIDG TFLGA-13
Packaging: Tape & Reel (TR)
Package / Case: 13-TFLGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TFLGA-13-1
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2EDF7275KXUMA1 2EDF7275KXUMA1 Infineon Technologies Infineon-2EDF7175F-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163b09026be3060 Description: IC GATE DRVR HALF-BRIDG TFLGA-13
Packaging: Cut Tape (CT)
Package / Case: 13-TFLGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TFLGA-13-1
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
DigiKey Programmable: Not Verified
auf Bestellung 85 Stücke:
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5+4.4 EUR
10+3.27 EUR
25+2.99 EUR
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2EDF7175FXUMA2 2EDF7175FXUMA2 Infineon Technologies Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057 Description: IC GATE DRVR HALF-BRIDG DSO16
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 1A, 2A
DigiKey Programmable: Not Verified
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2500+2.8 EUR
5000+2.74 EUR
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2EDF7275FXUMA2 2EDF7275FXUMA2 Infineon Technologies Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057 Description: IC GATE DRVR HALF-BRIDG DSO16
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 1500 V
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
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2500+2.8 EUR
5000+2.74 EUR
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2EDS8165HXUMA1 2EDS8165HXUMA1 Infineon Technologies Infineon-2EDF7175F-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163b09026be3060 Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 1A, 2A
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2EDS8265HXUMA1 2EDS8265HXUMA1 Infineon Technologies Infineon-2EDF7175F-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163b09026be3060 Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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2EDS8265HXUMA1 2EDS8265HXUMA1 Infineon Technologies Infineon-2EDF7175F-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163b09026be3060 Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2EDS9265HXUMA1 2EDS9265HXUMA1 Infineon Technologies Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057 Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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2EDS9265HXUMA1 2EDS9265HXUMA1 Infineon Technologies Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057 Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
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6+4.06 EUR
10+3.02 EUR
25+2.75 EUR
100+2.46 EUR
250+2.32 EUR
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2EDS8165HXUMA2 2EDS8165HXUMA2 Infineon Technologies Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057 Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 1A, 2A
Logic Voltage - VIL, VIH: -, 1.65V
Gate Type: MOSFET (N-Channel, P-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Supplier Device Package: PG-DSO-16-30
Input Type: Non-Inverting
Voltage - Supply: 20V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
auf Bestellung 1000 Stücke:
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1000+2.18 EUR
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2EDS8265HXUMA2 2EDS8265HXUMA2 Infineon Technologies Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057 Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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TLF35584QVVS1XUMA2 TLF35584QVVS1XUMA2 Infineon Technologies Infineon-TLF35584QV-ProductOverview-DataSheet-v01_00-EN.pdf?fileId=5546d46279cccfdb0179ce150fc81cbf Description: IC REG AUTO APPL 1OUT VQFN-48-31
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3V ~ 40V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Power Supply, Automotive Applications
Supplier Device Package: PG-VQFN-48-31
Part Status: Active
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2500+6.3 EUR
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TLF35584QVVS1XUMA2 TLF35584QVVS1XUMA2 Infineon Technologies Infineon-TLF35584QV-ProductOverview-DataSheet-v01_00-EN.pdf?fileId=5546d46279cccfdb0179ce150fc81cbf Description: IC REG AUTO APPL 1OUT VQFN-48-31
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3V ~ 40V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Power Supply, Automotive Applications
Supplier Device Package: PG-VQFN-48-31
Part Status: Active
auf Bestellung 9810 Stücke:
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SGW30N60 SGW30N60 Infineon Technologies INFNS14175-1.pdf?t.download=true&u=5oefqw Description: IGBT, 41A I(C), 600V V(BR)CES, N
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO247-3-21
IGBT Type: NPT
Td (on/off) @ 25°C: 44ns/291ns
Switching Energy: 640µJ (on), 650µJ (off)
Test Condition: 400V, 30A, 11Ohm, 15V
Gate Charge: 140 nC
Part Status: Active
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 112 A
Power - Max: 250 W
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SPI20N65C3 SPI20N65C3 Infineon Technologies Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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TLE42712AKSA1 TLE42712AKSA1 Infineon Technologies TLE 4271-2.pdf Description: IC REG LIN 5V 550MA TO220-7-11
Packaging: Bulk
Package / Case: TO-220-7 Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 550mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: P-TO220-7-11
Voltage - Output (Min/Fixed): 5V
Control Features: Reset, Watchdog
Part Status: Obsolete
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.7V @ 550mA
Protection Features: Over Current, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit
Current - Supply (Max): 90 mA
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SPD08N50C3 SPD08N50C3 Infineon Technologies Infineon-SPD08N50C3-DS-v02_06-en.pdf?fileId=db3a30433f1b26e8013f1ea5b45f0334 Description: COOLMOS, 7.6A, 500V, 0.6OHM, N-C
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
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PMB3543E6327XQSA1 Infineon Technologies Description: TELECOM IC
Packaging: Bulk
auf Bestellung 119 Stücke:
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FS3L200R10W3S7FB11BPSA1 FS3L200R10W3S7FB11BPSA1 Infineon Technologies Infineon-FS3L200R10W3S7F_B11-DataSheet-v03_00-EN.pdf?fileId=5546d46271bf4f920172079cc70479ac Description: IGBT MODULE 950V 70A AG-EASY3B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY3B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 950 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 31 µA
Input Capacitance (Cies) @ Vce: 6.48 nF @ 25 V
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F3L400R10W3S7FB11BPSA1 F3L400R10W3S7FB11BPSA1 Infineon Technologies Infineon-F3L400R10W3S7F_B11-DataSheet-v03_00-EN.pdf?fileId=5546d46271bf4f920172078a6a58799d Description: IGBT MODULE LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY3B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 950 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 71 µA
Input Capacitance (Cies) @ Vce: 49.2 nF @ 25 V
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SAF-XC164CM-16F40FBA INFNS10522-1.pdf?t.download=true&u=5oefqw
SAF-XC164CM-16F40FBA
Hersteller: Infineon Technologies
Description: LEGACY 16 BIT FLASH MICROCONTROL
DigiKey Programmable: Not Verified
Number of I/O: 47
Part Status: Active
Supplier Device Package: PG-LQFP-64-4
Peripherals: PWM, WDT
Connectivity: ASC, CANbus, SPI, SSC, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 14x8/10b SAR
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 8K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Bulk
Produkt ist nicht verfügbar
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IPS70R1K4CEAKMA1 Infineon-IPD70R1K4CE-DS-v02_00-EN.pdf?fileId=5546d462533600a40153a2a2125c7af1
IPS70R1K4CEAKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 5.4A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
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IPS7071GTRPBF IPS7071GPbF_6-24-07.pdf
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHANNEL 1:1 8SO
Features: Auto Restart
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 35V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Part Status: Obsolete
Produkt ist nicht verfügbar
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AUIPS7121R auips7121.pdf?fileId=5546d462533600a4015355a7d1721328
AUIPS7121R
Hersteller: Infineon Technologies
Description: IC PWR DRIVER N-CHANNEL 1:1 DPAK
Packaging: Tube
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Output Configuration: High Side
Rds On (Typ): 24mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-5
Fault Protection: Current Limiting (Fixed), Over Temperature
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BAW 79D E6327 INFNS10746-1.pdf?t.download=true&u=5oefqw
BAW 79D E6327
Hersteller: Infineon Technologies
Description: SWITCHING AND RECTIFIER DIODES
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PG-SOT89
Current - Average Rectified (Io) (per Diode): 1A (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 1 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Bulk
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PEF2026T-PV1.1
Hersteller: Infineon Technologies
Description: ISDN HIGH VOLTAGE POWER CONTROLL
Packaging: Bulk
Part Status: Active
auf Bestellung 775 Stücke:
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AUIRFR5305TR auirfr5305.pdf?fileId=5546d462533600a4015355b5cb911494
AUIRFR5305TR
Hersteller: Infineon Technologies
Description: MOSFET P-CH 55V 31A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Part Status: Obsolete
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Qualification: AEC-Q101
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AUIRFR5305TR auirfr5305.pdf?fileId=5546d462533600a4015355b5cb911494
AUIRFR5305TR
Hersteller: Infineon Technologies
Description: MOSFET P-CH 55V 31A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Part Status: Obsolete
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Qualification: AEC-Q101
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3+7.2 EUR
10+4.72 EUR
100+3.3 EUR
500+2.69 EUR
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TLE4935LE6433HAXA1
Hersteller: Infineon Technologies
Description: TLE4935L - HALL EFFECT SWITCHE
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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IPI80N06S2L11AKSA2 IPx80N06S2L-11.pdf
IPI80N06S2L11AKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 40A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 2V @ 93µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 25 V
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IPB80N06S2LH5ATMA4 IPB%2CIPP80N06S2L-H5.pdf
IPB80N06S2LH5ATMA4
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2406 Stücke:
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IPI80N06S2L05AKSA2 IPx80N06S2L-05.pdf
IPI80N06S2L05AKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
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AnzahlPrivatkunde
138+3.99 EUR
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IPB17N25S3100ATMA1 Infineon-IPP_B17N25S3_100-DS-v01_01-EN.pdf?fileId=db3a30433b92f0e8013b937c398a014b
IPB17N25S3100ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 17A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 54µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 57000 Stücke:
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1000+2 EUR
2000+1.86 EUR
3000+1.78 EUR
5000+1.71 EUR
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IPB17N25S3100ATMA1 Infineon-IPP_B17N25S3_100-DS-v01_01-EN.pdf?fileId=db3a30433b92f0e8013b937c398a014b
IPB17N25S3100ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 17A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 54µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 57787 Stücke:
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4+5.93 EUR
10+3.86 EUR
100+2.67 EUR
500+2.17 EUR
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BSC882N03LSG INFNS16215-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 15 V
Produkt ist nicht verfügbar
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BSC882N03LS G INFNS16215-1.pdf?t.download=true&u=5oefqw
BSC882N03LS G
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 15 V
Produkt ist nicht verfügbar
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BSC882N03MSG INFNS16215-1.pdf?t.download=true&u=5oefqw
BSC882N03MSG
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
auf Bestellung 23996 Stücke:
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AnzahlPrivatkunde
577+1.04 EUR
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EVAL600W12VLLCC7DTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR ICE2QR2280Z
Packaging: Bulk
Voltage - Output: 12V
Voltage - Input: 350V ~ 410V
Current - Output: 50A
Contents: Board(s)
Frequency - Switching: 150kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: ICE2QR2280Z
Supplied Contents: Board(s)
Main Purpose: DC/DC Converter
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Power - Output: 600W
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+1215.38 EUR
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SPA11N65C3 Infineon-SPP_A_I11N65C3-DS-v02_91-en.pdf?fileId=db3a3043163797a6011637d98e5e0049
SPA11N65C3
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 11A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Produkt ist nicht verfügbar
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MB89193PF-G-529-ER-RE1 ProductGuide_2008.1.pdf
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 8KB MROM 28SOP
Program Memory Type: Mask ROM
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 256 x 8
Program Memory Size: 8KB (8K x 8)
Speed: 4.2MHz
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 16
Part Status: Obsolete
Supplier Device Package: 28-SOP
Peripherals: POR, WDT
Connectivity: Serial I/O
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Core Size: 8-Bit
Core Processor: F²MC-8L
Produkt ist nicht verfügbar
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MB89613RPF-G-524-BNDE1
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 8KB MROM 64QFP
DigiKey Programmable: Not Verified
Number of I/O: 53
Part Status: Obsolete
Supplier Device Package: 64-QFP (14x20)
Peripherals: POR, PWM, WDT
Core Size: 8-Bit
Core Processor: F²MC-8L
Program Memory Type: Mask ROM
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 256 x 8
Program Memory Size: 8KB (8K x 8)
Speed: 10MHz
Mounting Type: Surface Mount
Package / Case: 64-BQFP
Packaging: Tray
Connectivity: Serial I/O
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Produkt ist nicht verfügbar
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TLF35584QKVS1XUMA2 Infineon-TLF35584QV-ProductOverview-DataSheet-v01_00-EN.pdf?fileId=5546d46279cccfdb0179ce150fc81cbf
TLF35584QKVS1XUMA2
Hersteller: Infineon Technologies
Description: IC REG AUTO APPL 1OUT LQFP64-18
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Voltage - Output: 5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3V ~ 40V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Power Supply, Automotive Applications
Supplier Device Package: PG-LQFP-64-18
Part Status: Active
auf Bestellung 1900 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1900+7.46 EUR
Mindestbestellmenge: 1900 Stücke
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TLF35584QKVS1XUMA2 Infineon-TLF35584QV-ProductOverview-DataSheet-v01_00-EN.pdf?fileId=5546d46279cccfdb0179ce150fc81cbf
TLF35584QKVS1XUMA2
Hersteller: Infineon Technologies
Description: IC REG AUTO APPL 1OUT LQFP64-18
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP Exposed Pad
Voltage - Output: 5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3V ~ 40V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Power Supply, Automotive Applications
Supplier Device Package: PG-LQFP-64-18
Part Status: Active
auf Bestellung 2642 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+17.53 EUR
10+12.01 EUR
100+9.13 EUR
Mindestbestellmenge: 2 Stücke
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IRG4BC30SPBF-INF IRSDS11001-1.pdf?t.download=true&u=5oefqw
IRG4BC30SPBF-INF
Hersteller: Infineon Technologies
Description: IGBT 600V 34A TO-220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Part Status: Active
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 100 W
auf Bestellung 5370 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
188+2.94 EUR
Mindestbestellmenge: 188 Stücke
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BAR6304WH6327XTSA1 INFNS15694-1.pdf?t.download=true&u=5oefqw
BAR6304WH6327XTSA1
Hersteller: Infineon Technologies
Description: RF DIODE PIN 50V 250MW PG-SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT323
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Produkt ist nicht verfügbar
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BAR6304WH6327XTSA1 INFNS15694-1.pdf?t.download=true&u=5oefqw
BAR6304WH6327XTSA1
Hersteller: Infineon Technologies
Description: RF DIODE PIN 50V 250MW PG-SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT323
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Produkt ist nicht verfügbar
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SPI07N60C3XKSA1 Infineon-SPP_A_I07N60C3-DS-v03_02-en%5B1%5D.pdf?fileId=db3a304412b407950112b42de18b490c
SPI07N60C3XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 7.3A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
auf Bestellung 89720 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
209+2.64 EUR
Mindestbestellmenge: 209 Stücke
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IKD04N60RAATMA1 IKD04N60RA.pdf
IKD04N60RAATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 8A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 43 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench
Td (on/off) @ 25°C: 14ns/146ns
Switching Energy: 90µJ (on), 150µJ (off)
Test Condition: 400V, 4A, 43Ohm, 15V
Gate Charge: 27 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 75 W
auf Bestellung 1681 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
324+1.65 EUR
Mindestbestellmenge: 324 Stücke
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XC2336A56F80LAAFXUMA1 XC2336A_v2.1_2011-07.pdf
XC2336A56F80LAAFXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 16/32BIT 448KB FLASH
Produkt ist nicht verfügbar
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XC2336A72F80LRABHXUMA1
XC2336A72F80LRABHXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 64LQFP
Produkt ist nicht verfügbar
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XC2336A56F80LAAHXUMA1 XC2336A_v2.1_2011-07.pdf
XC2336A56F80LAAHXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 64LQFP
Produkt ist nicht verfügbar
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IRS2183STRPBF irs2183.pdf?fileId=5546d462533600a401535676d20c27d8
IRS2183STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 40ns, 20ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Inverting, Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IRS2183STRPBF irs2183.pdf?fileId=5546d462533600a401535676d20c27d8
IRS2183STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 40ns, 20ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Inverting, Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 642 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.69 EUR
10+2.71 EUR
25+2.48 EUR
100+2.21 EUR
250+2.08 EUR
500+2.01 EUR
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IRF60SC241ARMA1 Infineon-IRF60SC241-DataSheet-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b533fb9af0ce7
IRF60SC241ARMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 360A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 2.4W (Ta), 417W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 388 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 30 V
Produkt ist nicht verfügbar
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IPI045N10N3 G INFN-S-A0004848105-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO262-3-1
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 137A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Packaging: Bulk
Produkt ist nicht verfügbar
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SP373-23-106-0
Hersteller: Infineon Technologies
Description: TIRE PRESSURE SENSOR
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
89+6.2 EUR
Mindestbestellmenge: 89 Stücke
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IRF7416TRPBF-1 IRF7416PbF-1_11-19-13.pdf
IRF7416TRPBF-1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 5.6A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.04V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Produkt ist nicht verfügbar
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ICE2PCS02GFUMA1 ICE2PCS02_G_2010-03-22.pdf
ICE2PCS02GFUMA1
Hersteller: Infineon Technologies
Description: IC PFC CTRLR CCM 65KHZ 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 25V
Frequency - Switching: 65kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
Current - Startup: 450 µA
Produkt ist nicht verfügbar
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2EDF7235KXUMA1 Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057
2EDF7235KXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDG TFLGA-13
Packaging: Tape & Reel (TR)
Package / Case: 13-TFLGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TFLGA-13-1
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2EDF7235KXUMA1 Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057
2EDF7235KXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDG TFLGA-13
Packaging: Cut Tape (CT)
Package / Case: 13-TFLGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TFLGA-13-1
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2EDF7275KXUMA1 Infineon-2EDF7175F-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163b09026be3060
2EDF7275KXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDG TFLGA-13
Packaging: Tape & Reel (TR)
Package / Case: 13-TFLGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TFLGA-13-1
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2EDF7275KXUMA1 Infineon-2EDF7175F-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163b09026be3060
2EDF7275KXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDG TFLGA-13
Packaging: Cut Tape (CT)
Package / Case: 13-TFLGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TFLGA-13-1
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
DigiKey Programmable: Not Verified
auf Bestellung 85 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.4 EUR
10+3.27 EUR
25+2.99 EUR
Mindestbestellmenge: 5 Stücke
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2EDF7175FXUMA2 Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057
2EDF7175FXUMA2
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDG DSO16
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 1A, 2A
DigiKey Programmable: Not Verified
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+2.8 EUR
5000+2.74 EUR
Mindestbestellmenge: 2500 Stücke
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2EDF7275FXUMA2 Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057
2EDF7275FXUMA2
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDG DSO16
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 1500 V
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+2.8 EUR
5000+2.74 EUR
Mindestbestellmenge: 2500 Stücke
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2EDS8165HXUMA1 Infineon-2EDF7175F-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163b09026be3060
2EDS8165HXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 1A, 2A
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2EDS8265HXUMA1 Infineon-2EDF7175F-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163b09026be3060
2EDS8265HXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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2EDS8265HXUMA1 Infineon-2EDF7175F-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163b09026be3060
2EDS8265HXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2EDS9265HXUMA1 Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057
2EDS9265HXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2EDS9265HXUMA1 Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057
2EDS9265HXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 464 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4.06 EUR
10+3.02 EUR
25+2.75 EUR
100+2.46 EUR
250+2.32 EUR
Mindestbestellmenge: 6 Stücke
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2EDS8165HXUMA2 Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057
2EDS8165HXUMA2
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 1A, 2A
Logic Voltage - VIL, VIH: -, 1.65V
Gate Type: MOSFET (N-Channel, P-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Supplier Device Package: PG-DSO-16-30
Input Type: Non-Inverting
Voltage - Supply: 20V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+2.18 EUR
Mindestbestellmenge: 1000 Stücke
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2EDS8265HXUMA2 Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057
2EDS8265HXUMA2
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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TLF35584QVVS1XUMA2 Infineon-TLF35584QV-ProductOverview-DataSheet-v01_00-EN.pdf?fileId=5546d46279cccfdb0179ce150fc81cbf
TLF35584QVVS1XUMA2
Hersteller: Infineon Technologies
Description: IC REG AUTO APPL 1OUT VQFN-48-31
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3V ~ 40V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Power Supply, Automotive Applications
Supplier Device Package: PG-VQFN-48-31
Part Status: Active
auf Bestellung 9800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+6.3 EUR
Mindestbestellmenge: 2500 Stücke
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TLF35584QVVS1XUMA2 Infineon-TLF35584QV-ProductOverview-DataSheet-v01_00-EN.pdf?fileId=5546d46279cccfdb0179ce150fc81cbf
TLF35584QVVS1XUMA2
Hersteller: Infineon Technologies
Description: IC REG AUTO APPL 1OUT VQFN-48-31
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3V ~ 40V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Power Supply, Automotive Applications
Supplier Device Package: PG-VQFN-48-31
Part Status: Active
auf Bestellung 9810 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+15.32 EUR
10+10.42 EUR
100+7.71 EUR
Mindestbestellmenge: 2 Stücke
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SGW30N60 INFNS14175-1.pdf?t.download=true&u=5oefqw
SGW30N60
Hersteller: Infineon Technologies
Description: IGBT, 41A I(C), 600V V(BR)CES, N
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO247-3-21
IGBT Type: NPT
Td (on/off) @ 25°C: 44ns/291ns
Switching Energy: 640µJ (on), 650µJ (off)
Test Condition: 400V, 30A, 11Ohm, 15V
Gate Charge: 140 nC
Part Status: Active
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 112 A
Power - Max: 250 W
Produkt ist nicht verfügbar
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SPI20N65C3
SPI20N65C3
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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TLE42712AKSA1 TLE 4271-2.pdf
TLE42712AKSA1
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 550MA TO220-7-11
Packaging: Bulk
Package / Case: TO-220-7 Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 550mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: P-TO220-7-11
Voltage - Output (Min/Fixed): 5V
Control Features: Reset, Watchdog
Part Status: Obsolete
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.7V @ 550mA
Protection Features: Over Current, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit
Current - Supply (Max): 90 mA
auf Bestellung 34338 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
205+2.92 EUR
Mindestbestellmenge: 205 Stücke
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SPD08N50C3 Infineon-SPD08N50C3-DS-v02_06-en.pdf?fileId=db3a30433f1b26e8013f1ea5b45f0334
SPD08N50C3
Hersteller: Infineon Technologies
Description: COOLMOS, 7.6A, 500V, 0.6OHM, N-C
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
Produkt ist nicht verfügbar
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PMB3543E6327XQSA1
Hersteller: Infineon Technologies
Description: TELECOM IC
Packaging: Bulk
auf Bestellung 119 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+93.99 EUR
Mindestbestellmenge: 7 Stücke
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FS3L200R10W3S7FB11BPSA1 Infineon-FS3L200R10W3S7F_B11-DataSheet-v03_00-EN.pdf?fileId=5546d46271bf4f920172079cc70479ac
FS3L200R10W3S7FB11BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 950V 70A AG-EASY3B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY3B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 950 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 31 µA
Input Capacitance (Cies) @ Vce: 6.48 nF @ 25 V
auf Bestellung 19 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+301.26 EUR
16+232.76 EUR
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F3L400R10W3S7FB11BPSA1 Infineon-F3L400R10W3S7F_B11-DataSheet-v03_00-EN.pdf?fileId=5546d46271bf4f920172078a6a58799d
F3L400R10W3S7FB11BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY3B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 950 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 71 µA
Input Capacitance (Cies) @ Vce: 49.2 nF @ 25 V
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+379.91 EUR
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