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1ED020I12BTXUMA1 1ED020I12BTXUMA1 Infineon Technologies INFNS19244-1.pdf?t.download=true&u=5oefqw Description: DGT ISO 4.5KV 1CH GT DVR DSO16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 4500Vrms
Supplier Device Package: PG-DSO-16-15
Rise / Fall Time (Typ): 30ns, 20ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 4.5V ~ 5.5V
Produkt ist nicht verfügbar
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EVAL1ED020I12B2TOBO1 EVAL1ED020I12B2TOBO1 Infineon Technologies Infineon-Evaluationboard_1ED020I12-B2-ApplicationNotes-v01_00-EN.pdf?fileId=db3a304340155f3d014029a04cf602e5 Description: EVAL BOARD FOR 1ED020I12-B2
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 1ED020I12-B2
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
auf Bestellung 3 Stücke:
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1+157.7 EUR
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BAT6404E6433HTMA1 BAT6404E6433HTMA1 Infineon Technologies INFNS11551-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOTT 40V 250MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 23718 Stücke:
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53+0.33 EUR
95+0.19 EUR
100+0.18 EUR
500+0.13 EUR
1000+0.11 EUR
2000+0.1 EUR
5000+0.089 EUR
Mindestbestellmenge: 53
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CY62167EV18LL-55BVI CY62167EV18LL-55BVI Infineon Technologies Infineon-CY62167EV18_MoBL_16-Mbit_(1_M_16)_Static_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe53a531d2&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.25V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY62167G30-45BVXI CY62167G30-45BVXI Infineon Technologies Infineon-CY62167G_CY62167GE_MOBL_16_MBIT_(1M_WORDS_X_16_BIT_2M_WORDS_X_8_BIT)_STATIC_RAM_WITH_ERROR-CORRECTING_CODE_(ECC)-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eccbe004700&utm_source=cypress&utm_medium=referral& Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
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2+15.58 EUR
10+14.47 EUR
25+14.02 EUR
50+13.68 EUR
100+13.34 EUR
480+12.6 EUR
960+12.56 EUR
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IAUS200N08S5N023ATMA1 IAUS200N08S5N023ATMA1 Infineon Technologies IAUS200N08S5N023.pdf Description: MOSFET N-CH 80V 200A HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 130µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 332 Stücke:
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3+6.58 EUR
10+4.34 EUR
100+3.07 EUR
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BCX42E6327 Infineon Technologies INFNS17215-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 100mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 125 V
Power - Max: 330 mW
Produkt ist nicht verfügbar
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TLE4241GMXUMA1 TLE4241GMXUMA1 Infineon Technologies Infineon-TLE4241GM-DS-v01_03-EN.pdf?fileId=db3a30431ddc9372011ebaad49bf7f26&ack=t Description: IC LED DRIVER LINEAR PWM 60MA
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 60mA
Internal Switch(s): Yes
Dimming: PWM
Voltage - Supply (Min): 4V
Voltage - Supply (Max): 45V
Part Status: Active
auf Bestellung 3649 Stücke:
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12+1.55 EUR
16+1.11 EUR
25+1.01 EUR
100+0.89 EUR
250+0.83 EUR
500+0.8 EUR
1000+0.77 EUR
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TLE8250G REEL Infineon Technologies Infineon-TLE8250G-DS-v01_11-EN.pdf?fileId=5546d46259d9a4bf015a3d1af4345eda Description: HIGH SPEED CAN-TRANSCEIVER
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 1Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8-16
Receiver Hysteresis: 100 mV
Duplex: Half
Part Status: Active
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TLE8250GXUMA1 TLE8250GXUMA1 Infineon Technologies Infineon-TLE8250G-DS-v01_11-EN.pdf?fileId=5546d46259d9a4bf015a3d1af4345eda Description: IC TRANSCEIVER HALF 1/1 DSO-8
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TLE8250GXUMA1 TLE8250GXUMA1 Infineon Technologies Infineon-TLE8250G-DS-v01_11-EN.pdf?fileId=5546d46259d9a4bf015a3d1af4345eda Description: IC TRANSCEIVER HALF 1/1 DSO-8
Produkt ist nicht verfügbar
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CY91F526LKBPMC-GSE1 CY91F526LKBPMC-GSE1 Infineon Technologies Infineon-CY91520_Series_32-bit_FR81S_Microcontroller-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda0e215ba3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil Description: IC MCU 32B 1.0625MB FLSH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 136K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 48x12b SAR; D/A 2x8b R2R
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Part Status: Obsolete
Number of I/O: 152
Produkt ist nicht verfügbar
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SAK-XC2232N-40F80LAA Infineon Technologies Description: 16-BIT C166 MMC - XC2200 FAMILY
Packaging: Bulk
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 42K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-6
Part Status: Active
Number of I/O: 38
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SPP03N60C3 SPP03N60C3 Infineon Technologies Infineon-SPP_A03N60C3-DS-v03_01-en.pdf?fileId=db3a304412b407950112b42dfb1c492b Description: COOLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
auf Bestellung 81011 Stücke:
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799+0.61 EUR
Mindestbestellmenge: 799
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IRF7478TRPBF-1 IRF7478TRPBF-1 Infineon Technologies IRF7478PbF-1_11-20-13.pdf Description: MOSFET N-CH 60V 7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 4.2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 25 V
Produkt ist nicht verfügbar
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AUIRFR9024NTRL AUIRFR9024NTRL Infineon Technologies INFN-S-A0002298863-1.pdf?t.download=true&u=5oefqw Description: MOSFET P-CH 55V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 6.6A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSC112N06LDATMA1 BSC112N06LDATMA1 Infineon Technologies Infineon-BSC112N06LD-DS-v02_00-EN.pdf?fileId=5546d462689a790c016905f559210ce6 Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 30V
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 28µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
auf Bestellung 25000 Stücke:
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5000+0.87 EUR
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BSC112N06LDATMA1 BSC112N06LDATMA1 Infineon Technologies Infineon-BSC112N06LD-DS-v02_00-EN.pdf?fileId=5546d462689a790c016905f559210ce6 Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 30V
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 28µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
auf Bestellung 25966 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.26 EUR
10+2.08 EUR
100+1.41 EUR
500+1.12 EUR
1000+1.07 EUR
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TLE4729GXUMA1 TLE4729GXUMA1 Infineon Technologies Infineon-TLE4729G-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a846b425e74d4 Description: IC MTR DRVR BIPOLAR 5V-16V 24DSO
Packaging: Tape & Reel (TR)
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 5V ~ 16V
Applications: General Purpose
Technology: Bipolar
Voltage - Load: 5V ~ 16V
Supplier Device Package: PG-DSO-24-9
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Part Status: Obsolete
Produkt ist nicht verfügbar
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IRL80HS120 IRL80HS120 Infineon Technologies Infineon-IRL80HS120-DS-v01_02-EN.pdf?fileId=5546d46259d9a4bf015a4b3b1df71191 Description: MOSFET N-CH 80V 12.5A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7.5A, 10V
Power Dissipation (Max): 11.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 10µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
auf Bestellung 16807 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.15 EUR
13+1.36 EUR
100+0.9 EUR
500+0.7 EUR
1000+0.64 EUR
2000+0.61 EUR
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BSP317PL6327 Infineon Technologies INFNS19469-1.pdf?t.download=true&u=5oefqw Description: P-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 430mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 370µA
Supplier Device Package: PG-SOT223-4-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 262 pF @ 25 V
Produkt ist nicht verfügbar
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BSP316PL6327 BSP316PL6327 Infineon Technologies INFNS16527-1.pdf?t.download=true&u=5oefqw Description: P-CHANNEL MOSFET
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BCR 139L3 E6327 BCR 139L3 E6327 Infineon Technologies BCR139.pdf Description: TRANS PREBIAS NPN 250MW TSLP-3
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BCR 139T E6327 BCR 139T E6327 Infineon Technologies BCR139.pdf Description: TRANS PREBIAS NPN 250MW SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SC75-3D
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 22 kOhms
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BCX52E6237 Infineon Technologies INFNS12465-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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BCX52E6327 BCX52E6327 Infineon Technologies INFNS12465-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89-4-2
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
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TDA4862GGEGXUMA2 TDA4862GGEGXUMA2 Infineon Technologies Infineon-TDA4862G-DS-v01_01-en%5B1%5D.pdf?fileId=db3a304412b407950112b427d8ba3cf5 Description: IC PFC CTRLR DCM 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 11V ~ 19V
Mode: Discontinuous Conduction (DCM)
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
Produkt ist nicht verfügbar
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KITAURIXTC277TFTTOBO1 KITAURIXTC277TFTTOBO1 Infineon Technologies Infineon-TC2x7_ApplicationKitManual-UM-v01_00-EN.pdf?fileId=5546d46269bda8df0169ca24e3d124cd Description: AURIX APPLICATION KIT TC277 TFT
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: TriCore™
Utilized IC / Part: TC277
Platform: AURIX
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IRFR3504PBF IRFR3504PBF Infineon Technologies IRF%28R%2CU%293504PbF.pdf Description: MOSFET N-CH 40V 30A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 30A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Produkt ist nicht verfügbar
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IRFR3504TRLPBF IRFR3504TRLPBF Infineon Technologies IRF%28R%2CU%293504PbF.pdf Description: MOSFET N-CH 40V 30A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 30A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
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IRFR3504TRRPBF IRFR3504TRRPBF Infineon Technologies IRF%28R%2CU%293504PbF.pdf Description: MOSFET N-CH 40V 30A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 30A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Produkt ist nicht verfügbar
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SDT05S60XK SDT05S60XK Infineon Technologies INFNS12197-1.pdf?t.download=true&u=5oefqw Description: DIODE SIL CARB 600V 5A TO220-2
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 170pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
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IPI70N12S311AKSA1 IPI70N12S311AKSA1 Infineon Technologies IPx70N12S3-11.pdf Description: MOSFET N-CHANNEL_100+
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 70A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 83µA
Supplier Device Package: PG-TO262-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V
Qualification: AEC-Q101
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KP126N6165 KP126N6165 Infineon Technologies KP126N6165.pdf Description: SENSOR 23.93PSIA 4.8V DSOF8
Packaging: Bulk
Features: Amplified Output, Temperature Compensated
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.2 V ~ 4.8 V
Operating Pressure: 8.7PSI ~ 23.93PSI (60kPa ~ 165kPa)
Pressure Type: Absolute
Accuracy: ±0.145PSI (±1kPa)
Operating Temperature: -40°C ~ 125°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Port Style: No Port
Part Status: Obsolete
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IDDD06G65C6XTMA1 IDDD06G65C6XTMA1 Infineon Technologies Infineon-IDDD06G65C6-DS-v02_00-EN.pdf?fileId=5546d462625a528f01628f86ff8c0e09 Description: DIODE SIC 650V 18A PGHDSOP101
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 302pF @ 1V, 1MHz
Current - Average Rectified (Io): 18A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 20 µA @ 420 V
Produkt ist nicht verfügbar
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IDK06G65C5XTMA2 IDK06G65C5XTMA2 Infineon Technologies Infineon-IDK06G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142ec85d5a1016a Description: DIODE SIL CARB 650V 6A PGTO2632
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 190pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Current - Reverse Leakage @ Vr: 1.1 mA @ 650 V
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IDK06G65C5XTMA2 IDK06G65C5XTMA2 Infineon Technologies Infineon-IDK06G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142ec85d5a1016a Description: DIODE SIL CARB 650V 6A PGTO2632
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 190pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Current - Reverse Leakage @ Vr: 1.1 mA @ 650 V
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10+3.22 EUR
100+2.39 EUR
500+2.05 EUR
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TLE63892GVXUMA2 TLE63892GVXUMA2 Infineon Technologies Infineon-TLE6389-DS-v02_10-EN.pdf?fileId=5546d46258fc0bc1015969d25b5241c7 Description: IC REG CTRLR BUCK 14DSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 360kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 5V ~ 60V
Supplier Device Package: PG-DSO-14
Synchronous Rectifier: Yes
Control Features: Current Limit, Enable, Reset
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Part Status: Last Time Buy
Number of Outputs: 1
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLS102B0MBHTSA1 TLS102B0MBHTSA1 Infineon Technologies Infineon-TLS102B0MB-DS-v01_00-EN.pdf?fileId=5546d46261ff5777016200cc47da2f86 Description: IC REG LIN POS ADJ 20MA SCT595-5
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 20mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 2V
Control Features: Enable
Part Status: Active
PSRR: 100dB (100Hz)
Voltage Dropout (Max): 0.3V @ 20mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 1.5 mA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 5692 Stücke:
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17+1.09 EUR
23+0.78 EUR
26+0.7 EUR
100+0.62 EUR
250+0.57 EUR
500+0.55 EUR
1000+0.53 EUR
Mindestbestellmenge: 17
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SABC165LMHA SABC165LMHA Infineon Technologies INFNS01617-1.pdf?t.download=true&u=5oefqw Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-100-2
Part Status: Active
Number of I/O: 77
Produkt ist nicht verfügbar
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SABC165LMHATR SABC165LMHATR Infineon Technologies INFNS01617-1.pdf?t.download=true&u=5oefqw Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-100
Part Status: Active
Number of I/O: 77
Produkt ist nicht verfügbar
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SAB-C165-L25F SAB-C165-L25F Infineon Technologies INFNS21451-1.pdf?t.download=true&u=5oefqw Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-TQFP-100
Part Status: Active
Number of I/O: 77
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAB-C165-L25FHA SAB-C165-L25FHA Infineon Technologies INFNS01617-1.pdf?t.download=true&u=5oefqw Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-TQFP-100-1
Part Status: Active
Number of I/O: 77
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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C165L25FHABXUMA1 C165L25FHABXUMA1 Infineon Technologies c165_ds_v20_2000_12_7.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4362c3764dc Description: IC MCU 16BIT ROMLESS 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-TQFP-100
Part Status: Obsolete
Number of I/O: 77
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SABC165LFHABXUMA1 SABC165LFHABXUMA1 Infineon Technologies INFNS01617-1.pdf?t.download=true&u=5oefqw Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-TQFP-100
Part Status: Active
Number of I/O: 77
DigiKey Programmable: Not Verified
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20+24.39 EUR
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SAB-C165LFHABXUMA1 SAB-C165LFHABXUMA1 Infineon Technologies INFNS01617-1.pdf?t.download=true&u=5oefqw Description: LEGACY 16 BIT MICROCONTROLLER
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-TQFP-100
Part Status: Active
Number of I/O: 77
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAB-C165LFHABXQMA1 SAB-C165LFHABXQMA1 Infineon Technologies Infineon-C165-DS-v02_00-en[8].pdf?fileId=db3a304412b407950112b43a49a66fd7 Description: LEGACY 16 BIT MICROCONTROLLER
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-TQFP-100
Part Status: Active
Number of I/O: 77
DigiKey Programmable: Not Verified
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20+24.71 EUR
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SABC165LF3VHABXUMA1 SABC165LF3VHABXUMA1 Infineon Technologies INFNS01617-1.pdf?t.download=true&u=5oefqw Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-TQFP-100
Part Status: Active
Number of I/O: 77
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAB-C165-LF SAB-C165-LF Infineon Technologies INFNS12141-1.pdf?t.download=true&u=5oefqw Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-TQFP-100
Part Status: Active
Number of I/O: 77
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SABC165LMHABXQMA1 Infineon Technologies Description: LEGACY 16-BIT MCU
Produkt ist nicht verfügbar
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AUXYBFP3306 Infineon Technologies Description: MOSFET N-CH 60V TO-247AC
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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BAS4004E6433HTMA1 BAS4004E6433HTMA1 Infineon Technologies INFNS19700-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOTT 40V 120MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
auf Bestellung 12712 Stücke:
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63+0.28 EUR
100+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
2000+0.1 EUR
5000+0.089 EUR
Mindestbestellmenge: 39
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BSP92PL6327 BSP92PL6327 Infineon Technologies INFNS16528-1.pdf?t.download=true&u=5oefqw Description: P-CHANNEL POWER MOSFET
auf Bestellung 283295 Stücke:
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1501+0.32 EUR
Mindestbestellmenge: 1501
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BSZ084N08NS5ATMA1 BSZ084N08NS5ATMA1 Infineon Technologies Infineon-BSZ084N08NS5-DS-v02_00-EN.pdf?fileId=5546d4624a75e5f1014aca9007801edb Description: MOSFET N-CH 80V 40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 20A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 31µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 40 V
auf Bestellung 5000 Stücke:
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Mindestbestellmenge: 5000
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BC 817-40 E6433 BC 817-40 E6433 Infineon Technologies 4a-BC-817-40-E6433.pdf Description: TRANS NPN 45V 0.5A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
Produkt ist nicht verfügbar
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CYW20737A1KML2GT CYW20737A1KML2GT Infineon Technologies Infineon-CYW20737_Single-Chip_Bluetooth_Low_Energy-Only_System-On-Chip-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee20b3d6851&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC RF TXRX+MCU BLUETOOTH 32VFQFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Sensitivity: -94dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 320kB ROM, 60kB RAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.8V
Power - Output: 4dBm
Protocol: Bluetooth v4.0
Current - Receiving: 9.8mA
Data Rate (Max): 1Mbps
Current - Transmitting: 9.1mA
Supplier Device Package: 32-QFN (5x5)
GPIO: 14
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BAT15099E6433HTMA1 BAT15099E6433HTMA1 Infineon Technologies INFNS15420-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTTKY 4V 100MW SOT143-4
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
auf Bestellung 1222 Stücke:
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12+1.51 EUR
19+0.95 EUR
100+0.62 EUR
500+0.48 EUR
1000+0.43 EUR
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BAR6302LE6327XTMA1 BAR6302LE6327XTMA1 Infineon Technologies INFNS15694-1.pdf?t.download=true&u=5oefqw Description: RF DIODE PIN 50V 250MW TSLP-2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-TSLP-2-1
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
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77+0.23 EUR
115+0.15 EUR
131+0.13 EUR
155+0.11 EUR
250+0.1 EUR
500+0.098 EUR
1000+0.093 EUR
2500+0.088 EUR
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BAR6305WH6327XTSA1 BAR6305WH6327XTSA1 Infineon Technologies INFNS15694-1.pdf?t.download=true&u=5oefqw Description: RF DIODE PIN 50V 250MW PG-SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
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72+0.25 EUR
103+0.17 EUR
117+0.15 EUR
138+0.13 EUR
250+0.12 EUR
500+0.11 EUR
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BAR6305E6327HTSA1 BAR6305E6327HTSA1 Infineon Technologies INFNS15694-1.pdf?t.download=true&u=5oefqw Description: RF DIODE PIN 50V 250MW PG-SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
auf Bestellung 3997 Stücke:
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61+0.29 EUR
69+0.26 EUR
100+0.22 EUR
250+0.2 EUR
500+0.19 EUR
1000+0.18 EUR
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1ED020I12BTXUMA1 INFNS19244-1.pdf?t.download=true&u=5oefqw
1ED020I12BTXUMA1
Hersteller: Infineon Technologies
Description: DGT ISO 4.5KV 1CH GT DVR DSO16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 4500Vrms
Supplier Device Package: PG-DSO-16-15
Rise / Fall Time (Typ): 30ns, 20ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 4.5V ~ 5.5V
Produkt ist nicht verfügbar
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EVAL1ED020I12B2TOBO1 Infineon-Evaluationboard_1ED020I12-B2-ApplicationNotes-v01_00-EN.pdf?fileId=db3a304340155f3d014029a04cf602e5
EVAL1ED020I12B2TOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR 1ED020I12-B2
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 1ED020I12-B2
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
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Anzahl Preis
1+157.7 EUR
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BAT6404E6433HTMA1 INFNS11551-1.pdf?t.download=true&u=5oefqw
BAT6404E6433HTMA1
Hersteller: Infineon Technologies
Description: DIODE ARR SCHOTT 40V 250MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 23718 Stücke:
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Anzahl Preis
53+0.33 EUR
95+0.19 EUR
100+0.18 EUR
500+0.13 EUR
1000+0.11 EUR
2000+0.1 EUR
5000+0.089 EUR
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CY62167EV18LL-55BVI Infineon-CY62167EV18_MoBL_16-Mbit_(1_M_16)_Static_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe53a531d2&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62167EV18LL-55BVI
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.25V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
auf Bestellung 7 Stücke:
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2+9.43 EUR
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CY62167G30-45BVXI Infineon-CY62167G_CY62167GE_MOBL_16_MBIT_(1M_WORDS_X_16_BIT_2M_WORDS_X_8_BIT)_STATIC_RAM_WITH_ERROR-CORRECTING_CODE_(ECC)-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eccbe004700&utm_source=cypress&utm_medium=referral&
CY62167G30-45BVXI
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
auf Bestellung 4733 Stücke:
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Anzahl Preis
2+15.58 EUR
10+14.47 EUR
25+14.02 EUR
50+13.68 EUR
100+13.34 EUR
480+12.6 EUR
960+12.56 EUR
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IAUS200N08S5N023ATMA1 IAUS200N08S5N023.pdf
IAUS200N08S5N023ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 200A HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 130µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 332 Stücke:
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Anzahl Preis
3+6.58 EUR
10+4.34 EUR
100+3.07 EUR
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BCX42E6327 INFNS17215-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 100mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 125 V
Power - Max: 330 mW
Produkt ist nicht verfügbar
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TLE4241GMXUMA1 Infineon-TLE4241GM-DS-v01_03-EN.pdf?fileId=db3a30431ddc9372011ebaad49bf7f26&ack=t
TLE4241GMXUMA1
Hersteller: Infineon Technologies
Description: IC LED DRIVER LINEAR PWM 60MA
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 60mA
Internal Switch(s): Yes
Dimming: PWM
Voltage - Supply (Min): 4V
Voltage - Supply (Max): 45V
Part Status: Active
auf Bestellung 3649 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.55 EUR
16+1.11 EUR
25+1.01 EUR
100+0.89 EUR
250+0.83 EUR
500+0.8 EUR
1000+0.77 EUR
Mindestbestellmenge: 12
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TLE8250G REEL Infineon-TLE8250G-DS-v01_11-EN.pdf?fileId=5546d46259d9a4bf015a3d1af4345eda
Hersteller: Infineon Technologies
Description: HIGH SPEED CAN-TRANSCEIVER
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 1Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8-16
Receiver Hysteresis: 100 mV
Duplex: Half
Part Status: Active
Produkt ist nicht verfügbar
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TLE8250GXUMA1 Infineon-TLE8250G-DS-v01_11-EN.pdf?fileId=5546d46259d9a4bf015a3d1af4345eda
TLE8250GXUMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 DSO-8
Produkt ist nicht verfügbar
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TLE8250GXUMA1 Infineon-TLE8250G-DS-v01_11-EN.pdf?fileId=5546d46259d9a4bf015a3d1af4345eda
TLE8250GXUMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 DSO-8
Produkt ist nicht verfügbar
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CY91F526LKBPMC-GSE1 Infineon-CY91520_Series_32-bit_FR81S_Microcontroller-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda0e215ba3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil
CY91F526LKBPMC-GSE1
Hersteller: Infineon Technologies
Description: IC MCU 32B 1.0625MB FLSH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 136K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 48x12b SAR; D/A 2x8b R2R
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Part Status: Obsolete
Number of I/O: 152
Produkt ist nicht verfügbar
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SAK-XC2232N-40F80LAA
Hersteller: Infineon Technologies
Description: 16-BIT C166 MMC - XC2200 FAMILY
Packaging: Bulk
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 42K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-6
Part Status: Active
Number of I/O: 38
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SPP03N60C3 Infineon-SPP_A03N60C3-DS-v03_01-en.pdf?fileId=db3a304412b407950112b42dfb1c492b
SPP03N60C3
Hersteller: Infineon Technologies
Description: COOLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
auf Bestellung 81011 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
799+0.61 EUR
Mindestbestellmenge: 799
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IRF7478TRPBF-1 IRF7478PbF-1_11-20-13.pdf
IRF7478TRPBF-1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 4.2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 25 V
Produkt ist nicht verfügbar
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AUIRFR9024NTRL INFN-S-A0002298863-1.pdf?t.download=true&u=5oefqw
AUIRFR9024NTRL
Hersteller: Infineon Technologies
Description: MOSFET P-CH 55V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 6.6A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSC112N06LDATMA1 Infineon-BSC112N06LD-DS-v02_00-EN.pdf?fileId=5546d462689a790c016905f559210ce6
BSC112N06LDATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 30V
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 28µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.87 EUR
Mindestbestellmenge: 5000
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BSC112N06LDATMA1 Infineon-BSC112N06LD-DS-v02_00-EN.pdf?fileId=5546d462689a790c016905f559210ce6
BSC112N06LDATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 30V
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 28µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
auf Bestellung 25966 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.26 EUR
10+2.08 EUR
100+1.41 EUR
500+1.12 EUR
1000+1.07 EUR
Mindestbestellmenge: 6
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TLE4729GXUMA1 Infineon-TLE4729G-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a846b425e74d4
TLE4729GXUMA1
Hersteller: Infineon Technologies
Description: IC MTR DRVR BIPOLAR 5V-16V 24DSO
Packaging: Tape & Reel (TR)
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 800mA
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 5V ~ 16V
Applications: General Purpose
Technology: Bipolar
Voltage - Load: 5V ~ 16V
Supplier Device Package: PG-DSO-24-9
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Part Status: Obsolete
Produkt ist nicht verfügbar
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IRL80HS120 Infineon-IRL80HS120-DS-v01_02-EN.pdf?fileId=5546d46259d9a4bf015a4b3b1df71191
IRL80HS120
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 12.5A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7.5A, 10V
Power Dissipation (Max): 11.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 10µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
auf Bestellung 16807 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.15 EUR
13+1.36 EUR
100+0.9 EUR
500+0.7 EUR
1000+0.64 EUR
2000+0.61 EUR
Mindestbestellmenge: 9
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BSP317PL6327 INFNS19469-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: P-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 430mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 370µA
Supplier Device Package: PG-SOT223-4-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 262 pF @ 25 V
Produkt ist nicht verfügbar
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BSP316PL6327 INFNS16527-1.pdf?t.download=true&u=5oefqw
BSP316PL6327
Hersteller: Infineon Technologies
Description: P-CHANNEL MOSFET
Produkt ist nicht verfügbar
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BCR 139L3 E6327 BCR139.pdf
BCR 139L3 E6327
Hersteller: Infineon Technologies
Description: TRANS PREBIAS NPN 250MW TSLP-3
Produkt ist nicht verfügbar
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BCR 139T E6327 BCR139.pdf
BCR 139T E6327
Hersteller: Infineon Technologies
Description: TRANS PREBIAS NPN 250MW SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SC75-3D
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 22 kOhms
Produkt ist nicht verfügbar
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BCX52E6237 INFNS12465-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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BCX52E6327 INFNS12465-1.pdf?t.download=true&u=5oefqw
BCX52E6327
Hersteller: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89-4-2
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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TDA4862GGEGXUMA2 Infineon-TDA4862G-DS-v01_01-en%5B1%5D.pdf?fileId=db3a304412b407950112b427d8ba3cf5
TDA4862GGEGXUMA2
Hersteller: Infineon Technologies
Description: IC PFC CTRLR DCM 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 11V ~ 19V
Mode: Discontinuous Conduction (DCM)
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
Produkt ist nicht verfügbar
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KITAURIXTC277TFTTOBO1 Infineon-TC2x7_ApplicationKitManual-UM-v01_00-EN.pdf?fileId=5546d46269bda8df0169ca24e3d124cd
KITAURIXTC277TFTTOBO1
Hersteller: Infineon Technologies
Description: AURIX APPLICATION KIT TC277 TFT
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: TriCore™
Utilized IC / Part: TC277
Platform: AURIX
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+452.21 EUR
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IRFR3504PBF IRF%28R%2CU%293504PbF.pdf
IRFR3504PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 30A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 30A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Produkt ist nicht verfügbar
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IRFR3504TRLPBF IRF%28R%2CU%293504PbF.pdf
IRFR3504TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 30A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 30A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Produkt ist nicht verfügbar
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IRFR3504TRRPBF IRF%28R%2CU%293504PbF.pdf
IRFR3504TRRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 30A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 30A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Produkt ist nicht verfügbar
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SDT05S60XK INFNS12197-1.pdf?t.download=true&u=5oefqw
SDT05S60XK
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 5A TO220-2
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 170pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
auf Bestellung 700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
127+4 EUR
Mindestbestellmenge: 127
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IPI70N12S311AKSA1 IPx70N12S3-11.pdf
IPI70N12S311AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CHANNEL_100+
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 70A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 83µA
Supplier Device Package: PG-TO262-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
218+2.1 EUR
Mindestbestellmenge: 218
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KP126N6165 KP126N6165.pdf
KP126N6165
Hersteller: Infineon Technologies
Description: SENSOR 23.93PSIA 4.8V DSOF8
Packaging: Bulk
Features: Amplified Output, Temperature Compensated
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.2 V ~ 4.8 V
Operating Pressure: 8.7PSI ~ 23.93PSI (60kPa ~ 165kPa)
Pressure Type: Absolute
Accuracy: ±0.145PSI (±1kPa)
Operating Temperature: -40°C ~ 125°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Port Style: No Port
Part Status: Obsolete
auf Bestellung 824 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
66+7.72 EUR
Mindestbestellmenge: 66
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IDDD06G65C6XTMA1 Infineon-IDDD06G65C6-DS-v02_00-EN.pdf?fileId=5546d462625a528f01628f86ff8c0e09
IDDD06G65C6XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIC 650V 18A PGHDSOP101
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 302pF @ 1V, 1MHz
Current - Average Rectified (Io): 18A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 20 µA @ 420 V
Produkt ist nicht verfügbar
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IDK06G65C5XTMA2 Infineon-IDK06G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142ec85d5a1016a
IDK06G65C5XTMA2
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 6A PGTO2632
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 190pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Current - Reverse Leakage @ Vr: 1.1 mA @ 650 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+1.67 EUR
2000+1.56 EUR
Mindestbestellmenge: 1000
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IDK06G65C5XTMA2 Infineon-IDK06G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142ec85d5a1016a
IDK06G65C5XTMA2
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 6A PGTO2632
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 190pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Current - Reverse Leakage @ Vr: 1.1 mA @ 650 V
auf Bestellung 3124 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.96 EUR
10+3.22 EUR
100+2.39 EUR
500+2.05 EUR
Mindestbestellmenge: 4
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TLE63892GVXUMA2 Infineon-TLE6389-DS-v02_10-EN.pdf?fileId=5546d46258fc0bc1015969d25b5241c7
TLE63892GVXUMA2
Hersteller: Infineon Technologies
Description: IC REG CTRLR BUCK 14DSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 360kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 5V ~ 60V
Supplier Device Package: PG-DSO-14
Synchronous Rectifier: Yes
Control Features: Current Limit, Enable, Reset
Output Phases: 1
Duty Cycle (Max): 100%
Clock Sync: Yes
Part Status: Last Time Buy
Number of Outputs: 1
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLS102B0MBHTSA1 Infineon-TLS102B0MB-DS-v01_00-EN.pdf?fileId=5546d46261ff5777016200cc47da2f86
TLS102B0MBHTSA1
Hersteller: Infineon Technologies
Description: IC REG LIN POS ADJ 20MA SCT595-5
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 20mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 2V
Control Features: Enable
Part Status: Active
PSRR: 100dB (100Hz)
Voltage Dropout (Max): 0.3V @ 20mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 1.5 mA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 5692 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.09 EUR
23+0.78 EUR
26+0.7 EUR
100+0.62 EUR
250+0.57 EUR
500+0.55 EUR
1000+0.53 EUR
Mindestbestellmenge: 17
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SABC165LMHA INFNS01617-1.pdf?t.download=true&u=5oefqw
SABC165LMHA
Hersteller: Infineon Technologies
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-100-2
Part Status: Active
Number of I/O: 77
Produkt ist nicht verfügbar
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SABC165LMHATR INFNS01617-1.pdf?t.download=true&u=5oefqw
SABC165LMHATR
Hersteller: Infineon Technologies
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-100
Part Status: Active
Number of I/O: 77
Produkt ist nicht verfügbar
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SAB-C165-L25F INFNS21451-1.pdf?t.download=true&u=5oefqw
SAB-C165-L25F
Hersteller: Infineon Technologies
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-TQFP-100
Part Status: Active
Number of I/O: 77
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAB-C165-L25FHA INFNS01617-1.pdf?t.download=true&u=5oefqw
SAB-C165-L25FHA
Hersteller: Infineon Technologies
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-TQFP-100-1
Part Status: Active
Number of I/O: 77
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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C165L25FHABXUMA1 c165_ds_v20_2000_12_7.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4362c3764dc
C165L25FHABXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT ROMLESS 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-TQFP-100
Part Status: Obsolete
Number of I/O: 77
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+22.11 EUR
Mindestbestellmenge: 24
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SABC165LFHABXUMA1 INFNS01617-1.pdf?t.download=true&u=5oefqw
SABC165LFHABXUMA1
Hersteller: Infineon Technologies
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-TQFP-100
Part Status: Active
Number of I/O: 77
DigiKey Programmable: Not Verified
auf Bestellung 154 Stücke:
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Anzahl Preis
20+24.39 EUR
Mindestbestellmenge: 20
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SAB-C165LFHABXUMA1 INFNS01617-1.pdf?t.download=true&u=5oefqw
SAB-C165LFHABXUMA1
Hersteller: Infineon Technologies
Description: LEGACY 16 BIT MICROCONTROLLER
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-TQFP-100
Part Status: Active
Number of I/O: 77
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAB-C165LFHABXQMA1 Infineon-C165-DS-v02_00-en[8].pdf?fileId=db3a304412b407950112b43a49a66fd7
SAB-C165LFHABXQMA1
Hersteller: Infineon Technologies
Description: LEGACY 16 BIT MICROCONTROLLER
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-TQFP-100
Part Status: Active
Number of I/O: 77
DigiKey Programmable: Not Verified
auf Bestellung 103 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+24.71 EUR
Mindestbestellmenge: 20
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SABC165LF3VHABXUMA1 INFNS01617-1.pdf?t.download=true&u=5oefqw
SABC165LF3VHABXUMA1
Hersteller: Infineon Technologies
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-TQFP-100
Part Status: Active
Number of I/O: 77
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAB-C165-LF INFNS12141-1.pdf?t.download=true&u=5oefqw
SAB-C165-LF
Hersteller: Infineon Technologies
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: ASC, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-TQFP-100
Part Status: Active
Number of I/O: 77
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SABC165LMHABXQMA1
Hersteller: Infineon Technologies
Description: LEGACY 16-BIT MCU
Produkt ist nicht verfügbar
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AUXYBFP3306
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V TO-247AC
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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BAS4004E6433HTMA1 INFNS19700-1.pdf?t.download=true&u=5oefqw
BAS4004E6433HTMA1
Hersteller: Infineon Technologies
Description: DIODE ARR SCHOTT 40V 120MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
auf Bestellung 12712 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
39+0.46 EUR
63+0.28 EUR
100+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
2000+0.1 EUR
5000+0.089 EUR
Mindestbestellmenge: 39
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BSP92PL6327 INFNS16528-1.pdf?t.download=true&u=5oefqw
BSP92PL6327
Hersteller: Infineon Technologies
Description: P-CHANNEL POWER MOSFET
auf Bestellung 283295 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1501+0.32 EUR
Mindestbestellmenge: 1501
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BSZ084N08NS5ATMA1 Infineon-BSZ084N08NS5-DS-v02_00-EN.pdf?fileId=5546d4624a75e5f1014aca9007801edb
BSZ084N08NS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 20A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 31µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 40 V
auf Bestellung 5000 Stücke:
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Anzahl Preis
5000+0.83 EUR
Mindestbestellmenge: 5000
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BC 817-40 E6433 4a-BC-817-40-E6433.pdf
BC 817-40 E6433
Hersteller: Infineon Technologies
Description: TRANS NPN 45V 0.5A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
Produkt ist nicht verfügbar
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CYW20737A1KML2GT Infineon-CYW20737_Single-Chip_Bluetooth_Low_Energy-Only_System-On-Chip-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee20b3d6851&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CYW20737A1KML2GT
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLUETOOTH 32VFQFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Sensitivity: -94dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 320kB ROM, 60kB RAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.8V
Power - Output: 4dBm
Protocol: Bluetooth v4.0
Current - Receiving: 9.8mA
Data Rate (Max): 1Mbps
Current - Transmitting: 9.1mA
Supplier Device Package: 32-QFN (5x5)
GPIO: 14
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BAT15099E6433HTMA1 INFNS15420-1.pdf?t.download=true&u=5oefqw
BAT15099E6433HTMA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 4V 100MW SOT143-4
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
auf Bestellung 1222 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.51 EUR
19+0.95 EUR
100+0.62 EUR
500+0.48 EUR
1000+0.43 EUR
Mindestbestellmenge: 12
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BAR6302LE6327XTMA1 INFNS15694-1.pdf?t.download=true&u=5oefqw
BAR6302LE6327XTMA1
Hersteller: Infineon Technologies
Description: RF DIODE PIN 50V 250MW TSLP-2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-TSLP-2-1
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
auf Bestellung 4208 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+0.23 EUR
115+0.15 EUR
131+0.13 EUR
155+0.11 EUR
250+0.1 EUR
500+0.098 EUR
1000+0.093 EUR
2500+0.088 EUR
Mindestbestellmenge: 77
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BAR6305WH6327XTSA1 INFNS15694-1.pdf?t.download=true&u=5oefqw
BAR6305WH6327XTSA1
Hersteller: Infineon Technologies
Description: RF DIODE PIN 50V 250MW PG-SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
auf Bestellung 7540 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
103+0.17 EUR
117+0.15 EUR
138+0.13 EUR
250+0.12 EUR
500+0.11 EUR
Mindestbestellmenge: 72
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BAR6305E6327HTSA1 INFNS15694-1.pdf?t.download=true&u=5oefqw
BAR6305E6327HTSA1
Hersteller: Infineon Technologies
Description: RF DIODE PIN 50V 250MW PG-SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
auf Bestellung 3997 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
42+0.42 EUR
61+0.29 EUR
69+0.26 EUR
100+0.22 EUR
250+0.2 EUR
500+0.19 EUR
1000+0.18 EUR
Mindestbestellmenge: 42
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