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V611480MHPSA1 Infineon Technologies Infineon-CLAMP_V61_14_80M-DS-v03_00-en_de.pdf?fileId=5546d46145f1f3a401461e177a6a1d5f Description: CLAMP DISK DEVICES 48MM HOUSINGS
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V501445MHPSA1 Infineon Technologies Infineon-Clamp_for_disc_devices_V50..M-DS-v03_00-EN.pdf?fileId=5546d462525dbac401532d7110a909aa Description: CLAMP DISK DEVICES 42MM HOUSINGS
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TD320N16SOFTIMHPSA1 Infineon Technologies Infineon-TT320N16SOF-DataSheet-v03_08-EN.pdf?fileId=5546d462525dbac40152cb734ec3695d Description: LT-BOND MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 130°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9500A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 320 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 520 A
Voltage - Off State: 1.6 kV
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TT320N16SOFTIMHPSA1 TT320N16SOFTIMHPSA1 Infineon Technologies Infineon-TT320N16SOF-DataSheet-v03_08-EN.pdf?fileId=5546d462525dbac40152cb734ec3695d Description: LT-BOND MODULE
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V7226120MHPSA1 Infineon Technologies Infineon-Clamp_for_disc_devices_V72-26..M-DS-v03_00-EN.pdf?fileId=5546d462525dbac401532d836b900b0a Description: CLAMP DISK DEVICES 58MM HOUSINGS
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DD261N22KTIMHPSA1 DD261N22KTIMHPSA1 Infineon Technologies Infineon-DD261N-DS-v03_02-EN.pdf?fileId=db3a304412b407950112b42fa08c4ca0 Description: THYR / DIODE MODULE DK
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DD540N22KTIMHPSA1 DD540N22KTIMHPSA1 Infineon Technologies Infineon-DD540N22K-DataSheet-v03_02-EN.pdf?fileId=db3a304412b407950112b42fa11c4ca4 Description: DIODE MOD GP 2200V 540A BGPB60AT
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 540A
Supplier Device Package: BG-PB60AT-1
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 1.7 kA
Current - Reverse Leakage @ Vr: 40 mA @ 2200 V
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DZ1100N22KTIMHPSA1 Infineon Technologies Infineon-DZ1100N22K-DS-v03_02-EN.pdf?fileId=5546d461464245d3014666d0f4e1611c Description: THYR / DIODE MODULE DK
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TLE42994GXUMA1 TLE42994GXUMA1 Infineon Technologies Infineon-TLE42994-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8524621f51 Description: IC REG LINEAR 5V 150MA DSO8
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TLE42994GMV33XUMA1 TLE42994GMV33XUMA1 Infineon Technologies Infineon-TLE42994-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc101595f8517351f4c Description: IC REG LINEAR 3.3V 150MA DSO14
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IPD90N08S405ATMA1 IPD90N08S405ATMA1 Infineon Technologies Infineon-IPD90N08S4-05-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c88704c7a01887149637d3941 Description: MOSFET N-CH 80V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 90A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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CY7C1059DV33-12ZSXQ CY7C1059DV33-12ZSXQ Infineon Technologies Infineon-CY7C1059DV33_8-Mbit_(1M_8)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2e10737db Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Tube
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
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IPD50R2K0CEAUMA1 IPD50R2K0CEAUMA1 Infineon Technologies Infineon-IPD50R2K0CE-DS-v02_03-EN.pdf?fileId=db3a30433ecb86d4013ed08fda5f0f0f Description: MOSFET N-CH 500V 2.4A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 600mA, 13V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 124 pF @ 100 V
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IPD50R1K4CEAUMA1 IPD50R1K4CEAUMA1 Infineon Technologies Infineon-IPD50R1K4CE-DS-v02_03-EN.pdf?fileId=db3a304339dcf4b10139e7c997862ca7 Description: MOSFET N-CH 500V 3.1A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 900mA, 13V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 178 pF @ 100 V
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IPD50R1K4CEAUMA1 IPD50R1K4CEAUMA1 Infineon Technologies Infineon-IPD50R1K4CE-DS-v02_03-EN.pdf?fileId=db3a304339dcf4b10139e7c997862ca7 Description: MOSFET N-CH 500V 3.1A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 900mA, 13V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 178 pF @ 100 V
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IPD50R650CEAUMA1 IPD50R650CEAUMA1 Infineon Technologies Infineon-IPD50R650CE-DS-v02_03-EN.pdf?fileId=db3a304339d29c450139d41341a202a1 Description: MOSFET N-CH 500V 9A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 1.8A, 13V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 342 pF @ 100 V
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IPD50R650CEBTMA1 IPD50R650CEBTMA1 Infineon Technologies Infineon-IPD50R650CE-DS-v02_03-EN.pdf?fileId=db3a304339d29c450139d41341a202a1 Description: MOSFET N-CH 500V 6.1A TO252-3
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IPC70N04S54R6ATMA1 IPC70N04S54R6ATMA1 Infineon Technologies Infineon-IPC70N04S5-4R6-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc101590801e625290d Description: MOSFET N-CH 40V 70A 8TDSON-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 35A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 17µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 25 V
Qualification: AEC-Q101
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100+0.86 EUR
500+0.67 EUR
1000+0.61 EUR
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IPP070N08N3GXKSA1 IPP070N08N3GXKSA1 Infineon Technologies INFN-S-A0001300127-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 73A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 73µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 40 V
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SAF-XC164TM-16F20F BA SAF-XC164TM-16F20F BA Infineon Technologies XC164TM.pdf Description: IC MCU 16BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 14x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: SPI, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-LQFP-64-4
Part Status: Obsolete
Number of I/O: 47
DigiKey Programmable: Not Verified
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SAF-XC164TM-16F40F BA SAF-XC164TM-16F40F BA Infineon Technologies XC164TM.pdf Description: IC MCU 16BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 14x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: SPI, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-LQFP-64-4
Part Status: Obsolete
Number of I/O: 47
DigiKey Programmable: Not Verified
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BSO040N03MSGXUMA1 BSO040N03MSGXUMA1 Infineon Technologies BSO040N03MS_rev1.0.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a30431b0626df011b0d4dfc657dd7 Description: MOSFET N-CH 30V 16A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V
auf Bestellung 553 Stücke:
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10+1.93 EUR
100+1.3 EUR
500+1.04 EUR
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IR25604SPBF-INF IR25604SPBF-INF Infineon Technologies IRSDS13486-1.pdf?t.download=true&u=5oefqw Description: HIGH AND LOW SIDE DRIVER
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Active
DigiKey Programmable: Not Verified
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IR25606SPBF-INF IR25606SPBF-INF Infineon Technologies IRSDS19323-1.pdf?t.download=true&u=5oefqw Description: HALF BRIDGE BASED PERIPHERAL DRI
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Active
DigiKey Programmable: Not Verified
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BC808-40WE6327 BC808-40WE6327 Infineon Technologies INFNS11647-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 25V 0.5A PG-SOT23-3-11
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 250 mW
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BC808-40W BC808-40W Infineon Technologies INFNS11647-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 25V 0.5A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 250 mW
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BC808-40E6327 Infineon Technologies INFNS11647-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 25V 0.5A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 330 mW
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BGSX24MU16E6327XUSA1 BGSX24MU16E6327XUSA1 Infineon Technologies Infineon-BGSX24MU16-DataSheet-v02_01-EN.pdf?fileId=5546d4627448fb2b017468b01dad7214 Description: IC RF SWITCH DP4T 5GHZ ULGA16-1
Packaging: Tape & Reel (TR)
Package / Case: 16-UFLGA Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: DP4T
RF Type: GSM, LTE, W-CDMA
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.4V
Insertion Loss: 1dB
Frequency Range: 100MHz ~ 5GHz
Test Frequency: 5GHz
Isolation: 34dB
Supplier Device Package: PG-ULGA-16-1
IIP3: 77dBm
Part Status: Active
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BSZ105N04NSG BSZ105N04NSG Infineon Technologies INFNS16243-1.pdf?t.download=true&u=5oefqw Description: OPTLMOS POWER-MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 14µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 20 V
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IRLU3636-701TRP Infineon Technologies Part_Number_Guide_Web.pdf Description: MOSFET N-CH 60V 50A IPAK
Packaging: Tube
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BFP420H6433XTMA1 BFP420H6433XTMA1 Infineon Technologies BFP420_Rev2013.pdf Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
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BFP420H6433XTMA1 BFP420H6433XTMA1 Infineon Technologies BFP420_Rev2013.pdf Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
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TLE42712GATMA TLE42712GATMA Infineon Technologies Infineon-TLE4271-2-DS-v02_70-EN.pdf?fileId=5546d46259d9a4bf0159f97a56393e6f Description: IC REG LINEAR FIXED LDO REG
Packaging: Bulk
Package / Case: TO-220-7 Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 550mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: P-TO220-7-11
Voltage - Output (Min/Fixed): 5V
Control Features: Delay, Inhibit, Reset, Watchdog
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.7V @ 550mA
Protection Features: Antisaturation, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit
Current - Supply (Max): 90 mA
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IAUC24N10S5L300ATMA1 IAUC24N10S5L300ATMA1 Infineon Technologies Infineon-IAUC24N10S5L300-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a6284a70dcf Description: MOSFET N-CH 100V 24A TDSON-8-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 12µA
Supplier Device Package: PG-TDSON-8-33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
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BGAU1A10E6327XTSA1 BGAU1A10E6327XTSA1 Infineon Technologies Infineon-BGAU1A10-DS-v03_00-EN.pdf?fileId=5546d462636cc8fb0163926acb524baa Description: IC RF AMP LTE 5.15GHZ-5.925GHZ 1
Packaging: Cut Tape (CT)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Frequency: 5.15GHz ~ 5.925GHz
RF Type: LTE
Voltage - Supply: 1.7V ~ 1.9V
Current - Supply: 5mA
Noise Figure: 1.7dB ~ 6.5dB
P1dB: -1dBm
Test Frequency: 5GHz
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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FS75R07W2E3B11ABOMA1 FS75R07W2E3B11ABOMA1 Infineon Technologies Infineon-FS75R07W2E3_B11A-DS-v03_00-en_de.pdf?fileId=db3a3043345a30bc01345aebc79e0071 Description: IGBT MODULES
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: ACEPACK™ 2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 275 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
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ICE3AR1080JGXUMA1 ICE3AR1080JGXUMA1 Infineon Technologies Infineon-ICE3AR1080JG-DS-v01_00-EN.pdf?fileId=5546d46253f6505701549aaf4c0d7510 Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Supplier Device Package: PG-DSO-12-19
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 17.3 V
Part Status: Active
Power (Watts): 62 W
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ICE3AR1080JGXUMA1 ICE3AR1080JGXUMA1 Infineon Technologies Infineon-ICE3AR1080JG-DS-v01_00-EN.pdf?fileId=5546d46253f6505701549aaf4c0d7510 Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Supplier Device Package: PG-DSO-12-19
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 17.3 V
Part Status: Active
Power (Watts): 62 W
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FS400R12A2T4BOSA1 FS400R12A2T4BOSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT MODULES
Packaging: Tray
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MB89133APFM-G-1019E1 Infineon Technologies ProductGuide_2008.1.pdf Description: IC MCU 8BIT 8KB MROM 48QFP
Packaging: Tray
Package / Case: 48-QFP
Mounting Type: Surface Mount
Speed: 4.2MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Connectivity: Serial I/O
Peripherals: POR, WDT
Supplier Device Package: 48-QFP (10x10)
Part Status: Obsolete
Number of I/O: 24
DigiKey Programmable: Not Verified
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MB89538APMC-G-1019-JNE1 MB89538APMC-G-1019-JNE1 Infineon Technologies ProductGuide_2008.1.pdf Description: IC MCU 8BIT 48KB MROM 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 12.5MHz
Program Memory Size: 48KB (48K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: I²C, Serial I/O, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 64-LQFP (12x12)
Part Status: Obsolete
Number of I/O: 38
DigiKey Programmable: Not Verified
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IRFH8330TRPBF IRFH8330TRPBF Infineon Technologies irfh8330pbf.pdf?fileId=5546d462533600a40153561fc2dc1f1f Description: MOSFET N-CH 30V 17A/56A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 56A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
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BC857BWE6327 BC857BWE6327 Infineon Technologies INFNS16508-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 45V 0.1A PG-SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
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BC857BWH6327 BC857BWH6327 Infineon Technologies INFNS16508-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 45V 0.1A SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
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IR2154 IR2154 Infineon Technologies IR2154.pdf Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IR2154S IR2154S Infineon Technologies IR2154.pdf Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IPB120N06S4H1ATMA2 IPB120N06S4H1ATMA2 Infineon Technologies Infineon-I120N06S4_H1-DS-v01_00-en.pdf?fileId=db3a30431ff988150120388c9cf60caf Description: MOSFET N-CH 60V 120A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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TDA5255 Infineon Technologies Description: ASK/FSK 434 MHZ WIRELESS TRANSVR
Packaging: Bulk
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Sensitivity: -109dBm
Mounting Type: Surface Mount
Frequency: 434MHz
Type: TxRx Only
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.1V ~ 5.5V
Power - Output: 13dBm
Current - Receiving: 8.6mA ~ 9.5mA
Data Rate (Max): 100kbps
Current - Transmitting: 5.2mA ~ 17.4mA
Supplier Device Package: PG-TSSOP-38
Modulation: ASK, FSK
RF Family/Standard: General ISM < 1GHz
Serial Interfaces: I²C, SPI
Part Status: Active
DigiKey Programmable: Not Verified
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IFX007TAUMA1 IFX007TAUMA1 Infineon Technologies IFX007T_Rev1.0_2018-02-21.pdf Description: IC HALF BRIDGE DRVR 55A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 8V ~ 40V
Rds On (Typ): 4.7mOhm LS, 5.3mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 55A
Technology: Power MOSFET
Voltage - Load: 8V ~ 40V
Supplier Device Package: PG-TO263-7-1
Fault Protection: Current Limiting, Open Load Detect, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Active
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S26KL512SDABHB020 S26KL512SDABHB020 Infineon Technologies Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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CY14B104NA-ZS45XE CY14B104NA-ZS45XE Infineon Technologies download Description: IC NVSRAM 4MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.63V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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CY14B104NA-BA20XI CY14B104NA-BA20XI Infineon Technologies download Description: IC NVSRAM 4MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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CY14B104NA-BA45XET CY14B104NA-BA45XET Infineon Technologies download Description: IC NVSRAM 4MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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CY14B104NA-ZS25XET CY14B104NA-ZS25XET Infineon Technologies download Description: IC NVSRAM 4MBIT PAR 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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CY14B104NA-ZS45XE CY14B104NA-ZS45XE Infineon Technologies download Description: IC NVSRAM 4MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.63V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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CY14B104NA-ZS25XE CY14B104NA-ZS25XE Infineon Technologies download Description: IC NVSRAM 4MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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DF23MR12W1M1PB11BPSA1 DF23MR12W1M1PB11BPSA1 Infineon Technologies Infineon-DF23MR12W1M1P_B11-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b7017153f0de295eb5 Description: MOSFET 2N-CH 1200V 25A AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 10mA
Supplier Device Package: AG-EASY1B-2
Part Status: Obsolete
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)
1+134.15 EUR
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SIPC03S2N03LX3MA1 Infineon Technologies Description: LV POWER MOS
Produkt ist nicht verfügbar
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BSB012N03LX3 G BSB012N03LX3 G Infineon Technologies BSB012N03LX3G.pdf Description: MOSFET N-CH 30V 39A/180A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 15 V
Produkt ist nicht verfügbar
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T830N12TOFXPSA1 T830N12TOFXPSA1 Infineon Technologies T830N.pdf Description: SCR MODULE 1800V 1500A DO200AB
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 844 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 1.8 kV
auf Bestellung 4 Stücke:
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3+180.41 EUR
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V611480MHPSA1 Infineon-CLAMP_V61_14_80M-DS-v03_00-en_de.pdf?fileId=5546d46145f1f3a401461e177a6a1d5f
Hersteller: Infineon Technologies
Description: CLAMP DISK DEVICES 48MM HOUSINGS
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V501445MHPSA1 Infineon-Clamp_for_disc_devices_V50..M-DS-v03_00-EN.pdf?fileId=5546d462525dbac401532d7110a909aa
Hersteller: Infineon Technologies
Description: CLAMP DISK DEVICES 42MM HOUSINGS
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TD320N16SOFTIMHPSA1 Infineon-TT320N16SOF-DataSheet-v03_08-EN.pdf?fileId=5546d462525dbac40152cb734ec3695d
Hersteller: Infineon Technologies
Description: LT-BOND MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 130°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9500A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 320 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 520 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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TT320N16SOFTIMHPSA1 Infineon-TT320N16SOF-DataSheet-v03_08-EN.pdf?fileId=5546d462525dbac40152cb734ec3695d
TT320N16SOFTIMHPSA1
Hersteller: Infineon Technologies
Description: LT-BOND MODULE
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V7226120MHPSA1 Infineon-Clamp_for_disc_devices_V72-26..M-DS-v03_00-EN.pdf?fileId=5546d462525dbac401532d836b900b0a
Hersteller: Infineon Technologies
Description: CLAMP DISK DEVICES 58MM HOUSINGS
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DD261N22KTIMHPSA1 Infineon-DD261N-DS-v03_02-EN.pdf?fileId=db3a304412b407950112b42fa08c4ca0
DD261N22KTIMHPSA1
Hersteller: Infineon Technologies
Description: THYR / DIODE MODULE DK
Produkt ist nicht verfügbar
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DD540N22KTIMHPSA1 Infineon-DD540N22K-DataSheet-v03_02-EN.pdf?fileId=db3a304412b407950112b42fa11c4ca4
DD540N22KTIMHPSA1
Hersteller: Infineon Technologies
Description: DIODE MOD GP 2200V 540A BGPB60AT
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 540A
Supplier Device Package: BG-PB60AT-1
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 1.7 kA
Current - Reverse Leakage @ Vr: 40 mA @ 2200 V
Produkt ist nicht verfügbar
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DZ1100N22KTIMHPSA1 Infineon-DZ1100N22K-DS-v03_02-EN.pdf?fileId=5546d461464245d3014666d0f4e1611c
Hersteller: Infineon Technologies
Description: THYR / DIODE MODULE DK
Produkt ist nicht verfügbar
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TLE42994GXUMA1 Infineon-TLE42994-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8524621f51
TLE42994GXUMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 150MA DSO8
auf Bestellung 2500 Stücke:
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TLE42994GMV33XUMA1 Infineon-TLE42994-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc101595f8517351f4c
TLE42994GMV33XUMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 3.3V 150MA DSO14
Produkt ist nicht verfügbar
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IPD90N08S405ATMA1 Infineon-IPD90N08S4-05-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c88704c7a01887149637d3941
IPD90N08S405ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 90A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.21 EUR
Mindestbestellmenge: 2500
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CY7C1059DV33-12ZSXQ Infineon-CY7C1059DV33_8-Mbit_(1M_8)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2e10737db
CY7C1059DV33-12ZSXQ
Hersteller: Infineon Technologies
Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Tube
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
auf Bestellung 20430 Stücke:
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Anzahl Preis
1+19.85 EUR
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IPD50R2K0CEAUMA1 Infineon-IPD50R2K0CE-DS-v02_03-EN.pdf?fileId=db3a30433ecb86d4013ed08fda5f0f0f
IPD50R2K0CEAUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 2.4A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 600mA, 13V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 124 pF @ 100 V
auf Bestellung 24537 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.13 EUR
26+0.69 EUR
100+0.44 EUR
500+0.34 EUR
1000+0.3 EUR
Mindestbestellmenge: 16
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IPD50R1K4CEAUMA1 Infineon-IPD50R1K4CE-DS-v02_03-EN.pdf?fileId=db3a304339dcf4b10139e7c997862ca7
IPD50R1K4CEAUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 3.1A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 900mA, 13V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 178 pF @ 100 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.34 EUR
Mindestbestellmenge: 2500
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IPD50R1K4CEAUMA1 Infineon-IPD50R1K4CE-DS-v02_03-EN.pdf?fileId=db3a304339dcf4b10139e7c997862ca7
IPD50R1K4CEAUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 3.1A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 900mA, 13V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 178 pF @ 100 V
auf Bestellung 4935 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1 EUR
21+0.86 EUR
100+0.6 EUR
500+0.47 EUR
1000+0.38 EUR
Mindestbestellmenge: 18
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IPD50R650CEAUMA1 Infineon-IPD50R650CE-DS-v02_03-EN.pdf?fileId=db3a304339d29c450139d41341a202a1
IPD50R650CEAUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 9A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 1.8A, 13V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 342 pF @ 100 V
auf Bestellung 1223 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.92 EUR
15+1.24 EUR
100+0.81 EUR
500+0.64 EUR
1000+0.58 EUR
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IPD50R650CEBTMA1 Infineon-IPD50R650CE-DS-v02_03-EN.pdf?fileId=db3a304339d29c450139d41341a202a1
IPD50R650CEBTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 6.1A TO252-3
Produkt ist nicht verfügbar
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IPC70N04S54R6ATMA1 Infineon-IPC70N04S5-4R6-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc101590801e625290d
IPC70N04S54R6ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 70A 8TDSON-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 35A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 17µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3994 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.08 EUR
14+1.3 EUR
100+0.86 EUR
500+0.67 EUR
1000+0.61 EUR
2000+0.57 EUR
Mindestbestellmenge: 9
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IPP070N08N3GXKSA1 INFN-S-A0001300127-1.pdf?t.download=true&u=5oefqw
IPP070N08N3GXKSA1
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 73A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 73µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 40 V
auf Bestellung 7700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
310+1.63 EUR
Mindestbestellmenge: 310
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SAF-XC164TM-16F20F BA XC164TM.pdf
SAF-XC164TM-16F20F BA
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 14x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: SPI, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-LQFP-64-4
Part Status: Obsolete
Number of I/O: 47
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAF-XC164TM-16F40F BA XC164TM.pdf
SAF-XC164TM-16F40F BA
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 14x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: SPI, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-LQFP-64-4
Part Status: Obsolete
Number of I/O: 47
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BSO040N03MSGXUMA1 BSO040N03MS_rev1.0.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a30431b0626df011b0d4dfc657dd7
BSO040N03MSGXUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 16A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V
auf Bestellung 553 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.03 EUR
10+1.93 EUR
100+1.3 EUR
500+1.04 EUR
Mindestbestellmenge: 6
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IR25604SPBF-INF IRSDS13486-1.pdf?t.download=true&u=5oefqw
IR25604SPBF-INF
Hersteller: Infineon Technologies
Description: HIGH AND LOW SIDE DRIVER
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IR25606SPBF-INF IRSDS19323-1.pdf?t.download=true&u=5oefqw
IR25606SPBF-INF
Hersteller: Infineon Technologies
Description: HALF BRIDGE BASED PERIPHERAL DRI
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BC808-40WE6327 INFNS11647-1.pdf?t.download=true&u=5oefqw
BC808-40WE6327
Hersteller: Infineon Technologies
Description: TRANS PNP 25V 0.5A PG-SOT23-3-11
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 250 mW
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8955+0.046 EUR
Mindestbestellmenge: 8955
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BC808-40W INFNS11647-1.pdf?t.download=true&u=5oefqw
BC808-40W
Hersteller: Infineon Technologies
Description: TRANS PNP 25V 0.5A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 250 mW
Produkt ist nicht verfügbar
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BC808-40E6327 INFNS11647-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: TRANS PNP 25V 0.5A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 330 mW
Produkt ist nicht verfügbar
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BGSX24MU16E6327XUSA1 Infineon-BGSX24MU16-DataSheet-v02_01-EN.pdf?fileId=5546d4627448fb2b017468b01dad7214
BGSX24MU16E6327XUSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH DP4T 5GHZ ULGA16-1
Packaging: Tape & Reel (TR)
Package / Case: 16-UFLGA Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: DP4T
RF Type: GSM, LTE, W-CDMA
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.4V
Insertion Loss: 1dB
Frequency Range: 100MHz ~ 5GHz
Test Frequency: 5GHz
Isolation: 34dB
Supplier Device Package: PG-ULGA-16-1
IIP3: 77dBm
Part Status: Active
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BSZ105N04NSG INFNS16243-1.pdf?t.download=true&u=5oefqw
BSZ105N04NSG
Hersteller: Infineon Technologies
Description: OPTLMOS POWER-MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 14µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 20 V
Produkt ist nicht verfügbar
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IRLU3636-701TRP Part_Number_Guide_Web.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 50A IPAK
Packaging: Tube
Produkt ist nicht verfügbar
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BFP420H6433XTMA1 BFP420_Rev2013.pdf
BFP420H6433XTMA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.29 EUR
Mindestbestellmenge: 10000
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BFP420H6433XTMA1 BFP420_Rev2013.pdf
BFP420H6433XTMA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
auf Bestellung 12391 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.7 EUR
37+0.49 EUR
41+0.43 EUR
100+0.37 EUR
250+0.35 EUR
500+0.33 EUR
1000+0.32 EUR
2500+0.3 EUR
5000+0.29 EUR
Mindestbestellmenge: 25
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TLE42712GATMA Infineon-TLE4271-2-DS-v02_70-EN.pdf?fileId=5546d46259d9a4bf0159f97a56393e6f
TLE42712GATMA
Hersteller: Infineon Technologies
Description: IC REG LINEAR FIXED LDO REG
Packaging: Bulk
Package / Case: TO-220-7 Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 550mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: P-TO220-7-11
Voltage - Output (Min/Fixed): 5V
Control Features: Delay, Inhibit, Reset, Watchdog
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.7V @ 550mA
Protection Features: Antisaturation, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit
Current - Supply (Max): 90 mA
Produkt ist nicht verfügbar
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IAUC24N10S5L300ATMA1 Infineon-IAUC24N10S5L300-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a6284a70dcf
IAUC24N10S5L300ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 24A TDSON-8-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 12µA
Supplier Device Package: PG-TDSON-8-33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BGAU1A10E6327XTSA1 Infineon-BGAU1A10-DS-v03_00-EN.pdf?fileId=5546d462636cc8fb0163926acb524baa
BGAU1A10E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF AMP LTE 5.15GHZ-5.925GHZ 1
Packaging: Cut Tape (CT)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Frequency: 5.15GHz ~ 5.925GHz
RF Type: LTE
Voltage - Supply: 1.7V ~ 1.9V
Current - Supply: 5mA
Noise Figure: 1.7dB ~ 6.5dB
P1dB: -1dBm
Test Frequency: 5GHz
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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FS75R07W2E3B11ABOMA1 Infineon-FS75R07W2E3_B11A-DS-v03_00-en_de.pdf?fileId=db3a3043345a30bc01345aebc79e0071
FS75R07W2E3B11ABOMA1
Hersteller: Infineon Technologies
Description: IGBT MODULES
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: ACEPACK™ 2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 275 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
Produkt ist nicht verfügbar
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ICE3AR1080JGXUMA1 Infineon-ICE3AR1080JG-DS-v01_00-EN.pdf?fileId=5546d46253f6505701549aaf4c0d7510
ICE3AR1080JGXUMA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Supplier Device Package: PG-DSO-12-19
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 17.3 V
Part Status: Active
Power (Watts): 62 W
auf Bestellung 17500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.66 EUR
Mindestbestellmenge: 2500
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ICE3AR1080JGXUMA1 Infineon-ICE3AR1080JG-DS-v01_00-EN.pdf?fileId=5546d46253f6505701549aaf4c0d7510
ICE3AR1080JGXUMA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Supplier Device Package: PG-DSO-12-19
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 17.3 V
Part Status: Active
Power (Watts): 62 W
auf Bestellung 21809 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.54 EUR
10+2.63 EUR
25+2.4 EUR
100+2.15 EUR
250+2.03 EUR
500+1.95 EUR
1000+1.89 EUR
Mindestbestellmenge: 5
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FS400R12A2T4BOSA1 fundamentals-of-power-semiconductors
FS400R12A2T4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULES
Packaging: Tray
Produkt ist nicht verfügbar
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MB89133APFM-G-1019E1 ProductGuide_2008.1.pdf
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 8KB MROM 48QFP
Packaging: Tray
Package / Case: 48-QFP
Mounting Type: Surface Mount
Speed: 4.2MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Connectivity: Serial I/O
Peripherals: POR, WDT
Supplier Device Package: 48-QFP (10x10)
Part Status: Obsolete
Number of I/O: 24
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB89538APMC-G-1019-JNE1 ProductGuide_2008.1.pdf
MB89538APMC-G-1019-JNE1
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 48KB MROM 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 12.5MHz
Program Memory Size: 48KB (48K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: I²C, Serial I/O, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 64-LQFP (12x12)
Part Status: Obsolete
Number of I/O: 38
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRFH8330TRPBF irfh8330pbf.pdf?fileId=5546d462533600a40153561fc2dc1f1f
IRFH8330TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 17A/56A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 56A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
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BC857BWE6327 INFNS16508-1.pdf?t.download=true&u=5oefqw
BC857BWE6327
Hersteller: Infineon Technologies
Description: TRANS PNP 45V 0.1A PG-SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
auf Bestellung 333000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8955+0.045 EUR
Mindestbestellmenge: 8955
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BC857BWH6327 INFNS16508-1.pdf?t.download=true&u=5oefqw
BC857BWH6327
Hersteller: Infineon Technologies
Description: TRANS PNP 45V 0.1A SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
auf Bestellung 57000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6512+0.08 EUR
Mindestbestellmenge: 6512
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IR2154 IR2154.pdf
IR2154
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IR2154S IR2154.pdf
IR2154S
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IPB120N06S4H1ATMA2 Infineon-I120N06S4_H1-DS-v01_00-en.pdf?fileId=db3a30431ff988150120388c9cf60caf
IPB120N06S4H1ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TDA5255
Hersteller: Infineon Technologies
Description: ASK/FSK 434 MHZ WIRELESS TRANSVR
Packaging: Bulk
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Sensitivity: -109dBm
Mounting Type: Surface Mount
Frequency: 434MHz
Type: TxRx Only
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.1V ~ 5.5V
Power - Output: 13dBm
Current - Receiving: 8.6mA ~ 9.5mA
Data Rate (Max): 100kbps
Current - Transmitting: 5.2mA ~ 17.4mA
Supplier Device Package: PG-TSSOP-38
Modulation: ASK, FSK
RF Family/Standard: General ISM < 1GHz
Serial Interfaces: I²C, SPI
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IFX007TAUMA1 IFX007T_Rev1.0_2018-02-21.pdf
IFX007TAUMA1
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRVR 55A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 8V ~ 40V
Rds On (Typ): 4.7mOhm LS, 5.3mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 55A
Technology: Power MOSFET
Voltage - Load: 8V ~ 40V
Supplier Device Package: PG-TO263-7-1
Fault Protection: Current Limiting, Open Load Detect, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Active
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.96 EUR
10+3.73 EUR
25+3.43 EUR
100+3.09 EUR
250+2.92 EUR
500+2.83 EUR
Mindestbestellmenge: 4
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S26KL512SDABHB020 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f
S26KL512SDABHB020
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 3354 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.95 EUR
10+14.8 EUR
25+14.34 EUR
50+13.99 EUR
100+13.65 EUR
338+13.05 EUR
676+12.84 EUR
Mindestbestellmenge: 2
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CY14B104NA-ZS45XE download
CY14B104NA-ZS45XE
Hersteller: Infineon Technologies
Description: IC NVSRAM 4MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.63V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
auf Bestellung 2553 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+26.29 EUR
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CY14B104NA-BA20XI download
CY14B104NA-BA20XI
Hersteller: Infineon Technologies
Description: IC NVSRAM 4MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY14B104NA-BA45XET download
CY14B104NA-BA45XET
Hersteller: Infineon Technologies
Description: IC NVSRAM 4MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY14B104NA-ZS25XET download
CY14B104NA-ZS25XET
Hersteller: Infineon Technologies
Description: IC NVSRAM 4MBIT PAR 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY14B104NA-ZS45XE download
CY14B104NA-ZS45XE
Hersteller: Infineon Technologies
Description: IC NVSRAM 4MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.63V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY14B104NA-ZS25XE download
CY14B104NA-ZS25XE
Hersteller: Infineon Technologies
Description: IC NVSRAM 4MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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DF23MR12W1M1PB11BPSA1 Infineon-DF23MR12W1M1P_B11-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b7017153f0de295eb5
DF23MR12W1M1PB11BPSA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 1200V 25A AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 10mA
Supplier Device Package: AG-EASY1B-2
Part Status: Obsolete
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+134.15 EUR
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SIPC03S2N03LX3MA1
Hersteller: Infineon Technologies
Description: LV POWER MOS
Produkt ist nicht verfügbar
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BSB012N03LX3 G BSB012N03LX3G.pdf
BSB012N03LX3 G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 39A/180A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 15 V
Produkt ist nicht verfügbar
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T830N12TOFXPSA1 T830N.pdf
T830N12TOFXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1800V 1500A DO200AB
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 844 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 1.8 kV
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+180.41 EUR
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