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BAW 79D E6327 BAW 79D E6327 Infineon Technologies INFNS10746-1.pdf?t.download=true&u=5oefqw Description: SWITCHING AND RECTIFIER DIODES
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 1A (DC)
Supplier Device Package: PG-SOT89
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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PEF2026T-PV1.1 Infineon Technologies Description: ISDN HIGH VOLTAGE POWER CONTROLL
Packaging: Bulk
Part Status: Active
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AUIRFR5305TR AUIRFR5305TR Infineon Technologies auirfr5305.pdf?fileId=5546d462533600a4015355b5cb911494 Description: MOSFET P-CH 55V 31A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Part Status: Obsolete
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Qualification: AEC-Q101
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AUIRFR5305TR AUIRFR5305TR Infineon Technologies auirfr5305.pdf?fileId=5546d462533600a4015355b5cb911494 Description: MOSFET P-CH 55V 31A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Part Status: Obsolete
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Qualification: AEC-Q101
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500+2.12 EUR
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TLE4935LE6433HAXA1 Infineon Technologies Description: TLE4935L - HALL EFFECT SWITCHE
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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IPI80N06S2L11AKSA2 IPI80N06S2L11AKSA2 Infineon Technologies IPx80N06S2L-11.pdf Description: MOSFET N-CH 55V 80A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 40A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 2V @ 93µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 25 V
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IPB80N06S2LH5ATMA4 IPB80N06S2LH5ATMA4 Infineon Technologies IPB%2CIPP80N06S2L-H5.pdf Description: MOSFET N-CH 55V 80A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
Qualification: AEC-Q101
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IPI80N06S2L05AKSA2 IPI80N06S2L05AKSA2 Infineon Technologies IPx80N06S2L-05.pdf Description: MOSFET N-CH 55V 80A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
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IPB17N25S3100ATMA1 IPB17N25S3100ATMA1 Infineon Technologies Infineon-IPP_B17N25S3_100-DS-v01_01-EN.pdf?fileId=db3a30433b92f0e8013b937c398a014b Description: MOSFET N-CH 250V 17A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 54µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Qualification: AEC-Q101
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IPB17N25S3100ATMA1 IPB17N25S3100ATMA1 Infineon Technologies Infineon-IPP_B17N25S3_100-DS-v01_01-EN.pdf?fileId=db3a30433b92f0e8013b937c398a014b Description: MOSFET N-CH 250V 17A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 54µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Qualification: AEC-Q101
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BSC882N03LSG Infineon Technologies INFNS16215-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 15 V
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BSC882N03LS G BSC882N03LS G Infineon Technologies INFNS16215-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 15 V
Produkt ist nicht verfügbar
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BSC882N03MSG BSC882N03MSG Infineon Technologies INFNS16215-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
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EVAL600W12VLLCC7DTOBO1 EVAL600W12VLLCC7DTOBO1 Infineon Technologies Description: EVAL BOARD FOR ICE2QR2280Z
Packaging: Bulk
Voltage - Output: 12V
Voltage - Input: 350V ~ 410V
Current - Output: 50A
Contents: Board(s)
Frequency - Switching: 150kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: ICE2QR2280Z
Supplied Contents: Board(s)
Main Purpose: DC/DC Converter
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Power - Output: 600W
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SPA11N65C3 SPA11N65C3 Infineon Technologies Infineon-SPP_A_I11N65C3-DS-v02_91-en.pdf?fileId=db3a3043163797a6011637d98e5e0049 Description: MOSFET N-CH 650V 11A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
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CY62148DV30LL-70ZSXA CY62148DV30LL-70ZSXA Infineon Technologies CY62148DV30.pdf Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tube
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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MB89193PF-G-529-ER-RE1 Infineon Technologies ProductGuide_2008.1.pdf Description: IC MCU 8BIT 8KB MROM 28SOP
Packaging: Tray
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Mounting Type: Surface Mount
Speed: 4.2MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Connectivity: Serial I/O
Peripherals: POR, WDT
Supplier Device Package: 28-SOP
Part Status: Obsolete
Number of I/O: 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB89613RPF-G-524-BNDE1 Infineon Technologies Description: IC MCU 8BIT 8KB MROM 64QFP
Packaging: Tray
Package / Case: 64-BQFP
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Connectivity: Serial I/O
Peripherals: POR, PWM, WDT
Supplier Device Package: 64-QFP (14x20)
Part Status: Obsolete
Number of I/O: 53
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLF35584QKVS1XUMA2 TLF35584QKVS1XUMA2 Infineon Technologies Infineon-TLF35584QV-ProductOverview-DataSheet-v01_00-EN.pdf?fileId=5546d46279cccfdb0179ce150fc81cbf Description: IC REG AUTO APPL 1OUT LQFP64-18
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Voltage - Output: 5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3V ~ 40V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Power Supply, Automotive Applications
Supplier Device Package: PG-LQFP-64-18
Part Status: Active
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TLF35584QKVS1XUMA2 TLF35584QKVS1XUMA2 Infineon Technologies Infineon-TLF35584QV-ProductOverview-DataSheet-v01_00-EN.pdf?fileId=5546d46279cccfdb0179ce150fc81cbf Description: IC REG AUTO APPL 1OUT LQFP64-18
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP Exposed Pad
Voltage - Output: 5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3V ~ 40V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Power Supply, Automotive Applications
Supplier Device Package: PG-LQFP-64-18
Part Status: Active
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IRG4BC30SPBF-INF IRG4BC30SPBF-INF Infineon Technologies IRSDS11001-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 34A TO-220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Part Status: Active
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 100 W
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BAR6304WH6327XTSA1 BAR6304WH6327XTSA1 Infineon Technologies INFNS15694-1.pdf?t.download=true&u=5oefqw Description: RF DIODE PIN 50V 250MW PG-SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT323
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
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15000+0.10 EUR
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BAR6304WH6327XTSA1 BAR6304WH6327XTSA1 Infineon Technologies INFNS15694-1.pdf?t.download=true&u=5oefqw Description: RF DIODE PIN 50V 250MW PG-SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT323
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
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133+0.13 EUR
250+0.12 EUR
500+0.11 EUR
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SPI07N60C3XKSA1 SPI07N60C3XKSA1 Infineon Technologies Infineon-SPP_A_I07N60C3-DS-v03_02-en%5B1%5D.pdf?fileId=db3a304412b407950112b42de18b490c Description: MOSFET N-CH 600V 7.3A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
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IKD04N60RAATMA1 IKD04N60RAATMA1 Infineon Technologies IKD04N60RA.pdf Description: IGBT TRENCH 600V 8A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 43 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench
Td (on/off) @ 25°C: 14ns/146ns
Switching Energy: 90µJ (on), 150µJ (off)
Test Condition: 400V, 4A, 43Ohm, 15V
Gate Charge: 27 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 75 W
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390+1.19 EUR
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XC2336A56F80LAAFXUMA1 XC2336A56F80LAAFXUMA1 Infineon Technologies XC2336A_v2.1_2011-07.pdf Description: IC MCU 16/32BIT 448KB FLASH
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XC2336A72F80LRABHXUMA1 XC2336A72F80LRABHXUMA1 Infineon Technologies Description: IC MCU 16BIT 64LQFP
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XC2336A56F80LAAHXUMA1 XC2336A56F80LAAHXUMA1 Infineon Technologies XC2336A_v2.1_2011-07.pdf Description: IC MCU 16BIT 64LQFP
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IRS2183STRPBF IRS2183STRPBF Infineon Technologies irs2183.pdf?fileId=5546d462533600a401535676d20c27d8 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
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IRS2183STRPBF IRS2183STRPBF Infineon Technologies irs2183.pdf?fileId=5546d462533600a401535676d20c27d8 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
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IRF60SC241ARMA1 IRF60SC241ARMA1 Infineon Technologies Infineon-IRF60SC241-DataSheet-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b533fb9af0ce7 Description: MOSFET N-CH 60V 360A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 2.4W (Ta), 417W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 388 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 30 V
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IPI045N10N3 G Infineon Technologies INFN-S-A0004848105-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 137A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V
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IRF7416TRPBF-1 IRF7416TRPBF-1 Infineon Technologies IRF7416PbF-1_11-19-13.pdf Description: MOSFET P-CH 30V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 5.6A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.04V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
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ICE2PCS02GFUMA1 ICE2PCS02GFUMA1 Infineon Technologies ICE2PCS02_G_2010-03-22.pdf Description: IC PFC CTRLR CCM 65KHZ 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 25V
Frequency - Switching: 65kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
Current - Startup: 450 µA
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2EDF7235KXUMA1 2EDF7235KXUMA1 Infineon Technologies Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057 Description: IC GATE DRVR HALF-BRIDG TFLGA-13
Packaging: Tape & Reel (TR)
Package / Case: 13-TFLGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TFLGA-13-1
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
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2EDF7235KXUMA1 2EDF7235KXUMA1 Infineon Technologies Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057 Description: IC GATE DRVR HALF-BRIDG TFLGA-13
Packaging: Cut Tape (CT)
Package / Case: 13-TFLGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TFLGA-13-1
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
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2EDF7275KXUMA1 2EDF7275KXUMA1 Infineon Technologies Infineon-2EDF7175F-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163b09026be3060 Description: IC GATE DRVR HALF-BRIDG TFLGA-13
Packaging: Tape & Reel (TR)
Package / Case: 13-TFLGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TFLGA-13-1
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
DigiKey Programmable: Not Verified
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2EDF7275KXUMA1 2EDF7275KXUMA1 Infineon Technologies Infineon-2EDF7175F-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163b09026be3060 Description: IC GATE DRVR HALF-BRIDG TFLGA-13
Packaging: Cut Tape (CT)
Package / Case: 13-TFLGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TFLGA-13-1
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
DigiKey Programmable: Not Verified
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2EDF7175FXUMA2 2EDF7175FXUMA2 Infineon Technologies Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057 Description: IC GATE DRVR HALF-BRIDG DSO16
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 1A, 2A
DigiKey Programmable: Not Verified
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2EDF7275FXUMA2 2EDF7275FXUMA2 Infineon Technologies Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057 Description: IC GATE DRVR HALF-BRIDG DSO16
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 1500 V
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
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7500+1.93 EUR
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2EDS8165HXUMA1 2EDS8165HXUMA1 Infineon Technologies Infineon-2EDF7175F-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163b09026be3060 Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 1A, 2A
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
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2EDS8265HXUMA1 2EDS8265HXUMA1 Infineon Technologies Infineon-2EDF7175F-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163b09026be3060 Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2EDS8265HXUMA1 2EDS8265HXUMA1 Infineon Technologies Infineon-2EDF7175F-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163b09026be3060 Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2EDS9265HXUMA1 2EDS9265HXUMA1 Infineon Technologies Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057 Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
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2EDS9265HXUMA1 2EDS9265HXUMA1 Infineon Technologies Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057 Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
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6+3.48 EUR
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250+1.99 EUR
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2EDS8165HXUMA2 2EDS8165HXUMA2 Infineon Technologies Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057 Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 1A, 2A
Part Status: Active
DigiKey Programmable: Not Verified
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2EDS8265HXUMA2 2EDS8265HXUMA2 Infineon Technologies Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057 Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLF35584QVVS1XUMA2 TLF35584QVVS1XUMA2 Infineon Technologies Infineon-TLF35584QV-ProductOverview-DataSheet-v01_00-EN.pdf?fileId=5546d46279cccfdb0179ce150fc81cbf Description: IC REG AUTO APPL 1OUT VQFN-48-31
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3V ~ 40V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Power Supply, Automotive Applications
Supplier Device Package: PG-VQFN-48-31
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+5.47 EUR
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TLF35584QVVS1XUMA2 TLF35584QVVS1XUMA2 Infineon Technologies Infineon-TLF35584QV-ProductOverview-DataSheet-v01_00-EN.pdf?fileId=5546d46279cccfdb0179ce150fc81cbf Description: IC REG AUTO APPL 1OUT VQFN-48-31
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3V ~ 40V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Power Supply, Automotive Applications
Supplier Device Package: PG-VQFN-48-31
Part Status: Active
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SGW30N60 SGW30N60 Infineon Technologies INFNS14175-1.pdf?t.download=true&u=5oefqw Description: IGBT, 41A I(C), 600V V(BR)CES, N
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO247-3-21
IGBT Type: NPT
Td (on/off) @ 25°C: 44ns/291ns
Switching Energy: 640µJ (on), 650µJ (off)
Test Condition: 400V, 30A, 11Ohm, 15V
Gate Charge: 140 nC
Part Status: Active
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 112 A
Power - Max: 250 W
Produkt ist nicht verfügbar
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SPI20N65C3 SPI20N65C3 Infineon Technologies Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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TLE42712AKSA1 TLE42712AKSA1 Infineon Technologies TLE 4271-2.pdf Description: IC REG LIN 5V 550MA TO220-7-11
Packaging: Bulk
Package / Case: TO-220-7 Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 550mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: P-TO220-7-11
Voltage - Output (Min/Fixed): 5V
Control Features: Reset, Watchdog
Part Status: Obsolete
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.7V @ 550mA
Protection Features: Over Current, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit
Current - Supply (Max): 90 mA
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205+2.45 EUR
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SPD08N50C3 SPD08N50C3 Infineon Technologies Infineon-SPD08N50C3-DS-v02_06-en.pdf?fileId=db3a30433f1b26e8013f1ea5b45f0334 Description: COOLMOS, 7.6A, 500V, 0.6OHM, N-C
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
Produkt ist nicht verfügbar
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PMB3543E6327XQSA1 Infineon Technologies Description: TELECOM IC
Packaging: Bulk
auf Bestellung 119 Stücke:
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FS3L200R10W3S7FB11BPSA1 FS3L200R10W3S7FB11BPSA1 Infineon Technologies Infineon-FS3L200R10W3S7F_B11-DataSheet-v03_00-EN.pdf?fileId=5546d46271bf4f920172079cc70479ac Description: IGBT MODULE LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY3B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 950 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 31 µA
Input Capacitance (Cies) @ Vce: 6.48 nF @ 25 V
auf Bestellung 19 Stücke:
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F3L400R10W3S7FB11BPSA1 F3L400R10W3S7FB11BPSA1 Infineon Technologies Infineon-F3L400R10W3S7F_B11-DataSheet-v03_00-EN.pdf?fileId=5546d46271bf4f920172078a6a58799d Description: IGBT MODULE LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY3B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 950 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 71 µA
Input Capacitance (Cies) @ Vce: 49.2 nF @ 25 V
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EVAL2ED020I12F2TOBO1 EVAL2ED020I12F2TOBO1 Infineon Technologies Infineon-EVAL_2ED020I12-F2-ApplicationNotes-v01_00-EN.pdf?fileId=db3a304340155f3d014029a78ed602f3 Description: EVAL BOARD FOR 2ED020I12-F2
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2ED020I12-F2
Supplied Contents: Board(s)
Part Status: Active
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KITAURIXTC275ARDSBTOBO1 KITAURIXTC275ARDSBTOBO1 Infineon Technologies Infineon-ShieldBuddy_TC275%20-UM-v02_08-EN.pdf?fileId=5546d46269e1c019016a54f0801a5590 Description: SHIELDBUDDYTC275-AURIX
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: TriCore™
Utilized IC / Part: TC275
Platform: AURIX
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PTFA181001FV4R250FTMA1 PTFA181001FV4R250FTMA1 Infineon Technologies PTFA181001%28E%2CF%29.pdf Description: RF MOSFET LDMOS 28V H-37248-2
Packaging: Tape & Reel (TR)
Package / Case: 2-Flatpack, Fin Leads, Flanged
Current Rating (Amps): 1µA
Mounting Type: Surface Mount
Frequency: 1.88GHz
Power - Output: 100W
Gain: 16.5dB
Technology: LDMOS
Supplier Device Package: H-37248-2
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 750 mA
Produkt ist nicht verfügbar
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IRLR3636TRLPBF IRLR3636TRLPBF Infineon Technologies IRSDS10828-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 60V 50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 50A, 10V
Power Dissipation (Max): 143W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3779 pF @ 50 V
auf Bestellung 668 Stücke:
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12+1.57 EUR
13+1.42 EUR
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BAW 79D E6327 INFNS10746-1.pdf?t.download=true&u=5oefqw
BAW 79D E6327
Hersteller: Infineon Technologies
Description: SWITCHING AND RECTIFIER DIODES
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 1A (DC)
Supplier Device Package: PG-SOT89
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 4500 Stücke:
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Anzahl Preis
2597+0.21 EUR
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PEF2026T-PV1.1
Hersteller: Infineon Technologies
Description: ISDN HIGH VOLTAGE POWER CONTROLL
Packaging: Bulk
Part Status: Active
auf Bestellung 775 Stücke:
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57+8.69 EUR
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AUIRFR5305TR auirfr5305.pdf?fileId=5546d462533600a4015355b5cb911494
AUIRFR5305TR
Hersteller: Infineon Technologies
Description: MOSFET P-CH 55V 31A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Part Status: Obsolete
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AUIRFR5305TR auirfr5305.pdf?fileId=5546d462533600a4015355b5cb911494
AUIRFR5305TR
Hersteller: Infineon Technologies
Description: MOSFET P-CH 55V 31A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Part Status: Obsolete
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1467 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.68 EUR
10+3.72 EUR
100+2.60 EUR
500+2.12 EUR
1000+1.97 EUR
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TLE4935LE6433HAXA1
Hersteller: Infineon Technologies
Description: TLE4935L - HALL EFFECT SWITCHE
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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IPI80N06S2L11AKSA2 IPx80N06S2L-11.pdf
IPI80N06S2L11AKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 40A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 2V @ 93µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 25 V
auf Bestellung 40500 Stücke:
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Anzahl Preis
314+1.56 EUR
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IPB80N06S2LH5ATMA4 IPB%2CIPP80N06S2L-H5.pdf
IPB80N06S2LH5ATMA4
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2406 Stücke:
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Anzahl Preis
181+2.69 EUR
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IPI80N06S2L05AKSA2 IPx80N06S2L-05.pdf
IPI80N06S2L05AKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
auf Bestellung 500 Stücke:
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Anzahl Preis
157+3.10 EUR
Mindestbestellmenge: 157
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IPB17N25S3100ATMA1 Infineon-IPP_B17N25S3_100-DS-v01_01-EN.pdf?fileId=db3a30433b92f0e8013b937c398a014b
IPB17N25S3100ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 17A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 54µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPB17N25S3100ATMA1 Infineon-IPP_B17N25S3_100-DS-v01_01-EN.pdf?fileId=db3a30433b92f0e8013b937c398a014b
IPB17N25S3100ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 17A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 54µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 253 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.19 EUR
10+3.10 EUR
100+2.37 EUR
Mindestbestellmenge: 5
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BSC882N03LSG INFNS16215-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 15 V
Produkt ist nicht verfügbar
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BSC882N03LS G INFNS16215-1.pdf?t.download=true&u=5oefqw
BSC882N03LS G
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 15 V
Produkt ist nicht verfügbar
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BSC882N03MSG INFNS16215-1.pdf?t.download=true&u=5oefqw
BSC882N03MSG
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
auf Bestellung 23996 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
577+0.87 EUR
Mindestbestellmenge: 577
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EVAL600W12VLLCC7DTOBO1
EVAL600W12VLLCC7DTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR ICE2QR2280Z
Packaging: Bulk
Voltage - Output: 12V
Voltage - Input: 350V ~ 410V
Current - Output: 50A
Contents: Board(s)
Frequency - Switching: 150kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: ICE2QR2280Z
Supplied Contents: Board(s)
Main Purpose: DC/DC Converter
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Power - Output: 600W
auf Bestellung 2 Stücke:
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Anzahl Preis
1+800.54 EUR
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SPA11N65C3 Infineon-SPP_A_I11N65C3-DS-v02_91-en.pdf?fileId=db3a3043163797a6011637d98e5e0049
SPA11N65C3
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 11A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Produkt ist nicht verfügbar
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CY62148DV30LL-70ZSXA CY62148DV30.pdf
CY62148DV30LL-70ZSXA
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tube
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
auf Bestellung 1321 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
111+4.45 EUR
Mindestbestellmenge: 111
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MB89193PF-G-529-ER-RE1 ProductGuide_2008.1.pdf
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 8KB MROM 28SOP
Packaging: Tray
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Mounting Type: Surface Mount
Speed: 4.2MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Connectivity: Serial I/O
Peripherals: POR, WDT
Supplier Device Package: 28-SOP
Part Status: Obsolete
Number of I/O: 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB89613RPF-G-524-BNDE1
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 8KB MROM 64QFP
Packaging: Tray
Package / Case: 64-BQFP
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Connectivity: Serial I/O
Peripherals: POR, PWM, WDT
Supplier Device Package: 64-QFP (14x20)
Part Status: Obsolete
Number of I/O: 53
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLF35584QKVS1XUMA2 Infineon-TLF35584QV-ProductOverview-DataSheet-v01_00-EN.pdf?fileId=5546d46279cccfdb0179ce150fc81cbf
TLF35584QKVS1XUMA2
Hersteller: Infineon Technologies
Description: IC REG AUTO APPL 1OUT LQFP64-18
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Voltage - Output: 5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3V ~ 40V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Power Supply, Automotive Applications
Supplier Device Package: PG-LQFP-64-18
Part Status: Active
auf Bestellung 1900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1900+6.26 EUR
Mindestbestellmenge: 1900
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TLF35584QKVS1XUMA2 Infineon-TLF35584QV-ProductOverview-DataSheet-v01_00-EN.pdf?fileId=5546d46279cccfdb0179ce150fc81cbf
TLF35584QKVS1XUMA2
Hersteller: Infineon Technologies
Description: IC REG AUTO APPL 1OUT LQFP64-18
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP Exposed Pad
Voltage - Output: 5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3V ~ 40V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Power Supply, Automotive Applications
Supplier Device Package: PG-LQFP-64-18
Part Status: Active
auf Bestellung 2798 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.03 EUR
10+9.60 EUR
100+7.66 EUR
Mindestbestellmenge: 2
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IRG4BC30SPBF-INF IRSDS11001-1.pdf?t.download=true&u=5oefqw
IRG4BC30SPBF-INF
Hersteller: Infineon Technologies
Description: IGBT 600V 34A TO-220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Part Status: Active
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 100 W
auf Bestellung 5370 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
216+2.26 EUR
Mindestbestellmenge: 216
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BAR6304WH6327XTSA1 INFNS15694-1.pdf?t.download=true&u=5oefqw
BAR6304WH6327XTSA1
Hersteller: Infineon Technologies
Description: RF DIODE PIN 50V 250MW PG-SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT323
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.10 EUR
6000+0.10 EUR
9000+0.10 EUR
15000+0.10 EUR
21000+0.09 EUR
30000+0.09 EUR
Mindestbestellmenge: 3000
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BAR6304WH6327XTSA1 INFNS15694-1.pdf?t.download=true&u=5oefqw
BAR6304WH6327XTSA1
Hersteller: Infineon Technologies
Description: RF DIODE PIN 50V 250MW PG-SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT323
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
auf Bestellung 37612 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
100+0.18 EUR
113+0.16 EUR
133+0.13 EUR
250+0.12 EUR
500+0.11 EUR
Mindestbestellmenge: 67
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SPI07N60C3XKSA1 Infineon-SPP_A_I07N60C3-DS-v03_02-en%5B1%5D.pdf?fileId=db3a304412b407950112b42de18b490c
SPI07N60C3XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 7.3A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
auf Bestellung 89720 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
228+2.04 EUR
Mindestbestellmenge: 228
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IKD04N60RAATMA1 IKD04N60RA.pdf
IKD04N60RAATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 8A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 43 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench
Td (on/off) @ 25°C: 14ns/146ns
Switching Energy: 90µJ (on), 150µJ (off)
Test Condition: 400V, 4A, 43Ohm, 15V
Gate Charge: 27 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 75 W
auf Bestellung 1681 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
390+1.19 EUR
Mindestbestellmenge: 390
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XC2336A56F80LAAFXUMA1 XC2336A_v2.1_2011-07.pdf
XC2336A56F80LAAFXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 16/32BIT 448KB FLASH
Produkt ist nicht verfügbar
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XC2336A72F80LRABHXUMA1
XC2336A72F80LRABHXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 64LQFP
Produkt ist nicht verfügbar
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XC2336A56F80LAAHXUMA1 XC2336A_v2.1_2011-07.pdf
XC2336A56F80LAAHXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 64LQFP
Produkt ist nicht verfügbar
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IRS2183STRPBF irs2183.pdf?fileId=5546d462533600a401535676d20c27d8
IRS2183STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.47 EUR
5000+1.43 EUR
Mindestbestellmenge: 2500
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IRS2183STRPBF irs2183.pdf?fileId=5546d462533600a401535676d20c27d8
IRS2183STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 5027 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.90 EUR
10+2.14 EUR
25+1.94 EUR
100+1.73 EUR
250+1.63 EUR
500+1.57 EUR
1000+1.52 EUR
Mindestbestellmenge: 7
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IRF60SC241ARMA1 Infineon-IRF60SC241-DataSheet-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b533fb9af0ce7
IRF60SC241ARMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 360A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 2.4W (Ta), 417W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 388 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 30 V
Produkt ist nicht verfügbar
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IPI045N10N3 G INFN-S-A0004848105-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 137A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V
Produkt ist nicht verfügbar
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IRF7416TRPBF-1 IRF7416PbF-1_11-19-13.pdf
IRF7416TRPBF-1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 5.6A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.04V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Produkt ist nicht verfügbar
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ICE2PCS02GFUMA1 ICE2PCS02_G_2010-03-22.pdf
ICE2PCS02GFUMA1
Hersteller: Infineon Technologies
Description: IC PFC CTRLR CCM 65KHZ 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 25V
Frequency - Switching: 65kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
Current - Startup: 450 µA
Produkt ist nicht verfügbar
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2EDF7235KXUMA1 Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057
2EDF7235KXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDG TFLGA-13
Packaging: Tape & Reel (TR)
Package / Case: 13-TFLGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TFLGA-13-1
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2EDF7235KXUMA1 Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057
2EDF7235KXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDG TFLGA-13
Packaging: Cut Tape (CT)
Package / Case: 13-TFLGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TFLGA-13-1
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
auf Bestellung 1013 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.77 EUR
10+5.18 EUR
25+4.90 EUR
100+4.25 EUR
250+4.03 EUR
500+3.62 EUR
1000+3.05 EUR
Mindestbestellmenge: 4
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2EDF7275KXUMA1 Infineon-2EDF7175F-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163b09026be3060
2EDF7275KXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDG TFLGA-13
Packaging: Tape & Reel (TR)
Package / Case: 13-TFLGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TFLGA-13-1
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
DigiKey Programmable: Not Verified
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+2.33 EUR
Mindestbestellmenge: 4000
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2EDF7275KXUMA1 Infineon-2EDF7175F-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163b09026be3060
2EDF7275KXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDG TFLGA-13
Packaging: Cut Tape (CT)
Package / Case: 13-TFLGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TFLGA-13-1
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
DigiKey Programmable: Not Verified
auf Bestellung 10767 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.51 EUR
10+3.36 EUR
25+3.08 EUR
100+2.76 EUR
250+2.61 EUR
500+2.52 EUR
1000+2.44 EUR
Mindestbestellmenge: 4
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2EDF7175FXUMA2 Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057
2EDF7175FXUMA2
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDG DSO16
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 1A, 2A
DigiKey Programmable: Not Verified
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+2.05 EUR
Mindestbestellmenge: 2500
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2EDF7275FXUMA2 Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057
2EDF7275FXUMA2
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDG DSO16
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 1500 V
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.99 EUR
5000+1.95 EUR
7500+1.93 EUR
Mindestbestellmenge: 2500
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2EDS8165HXUMA1 Infineon-2EDF7175F-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163b09026be3060
2EDS8165HXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 1A, 2A
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2EDS8265HXUMA1 Infineon-2EDF7175F-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163b09026be3060
2EDS8265HXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2EDS8265HXUMA1 Infineon-2EDF7175F-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163b09026be3060
2EDS8265HXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2EDS9265HXUMA1 Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057
2EDS9265HXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2EDS9265HXUMA1 Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057
2EDS9265HXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, SiC MOSFET
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 706 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.48 EUR
10+2.58 EUR
25+2.36 EUR
100+2.11 EUR
250+1.99 EUR
500+1.92 EUR
Mindestbestellmenge: 6
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2EDS8165HXUMA2 Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057
2EDS8165HXUMA2
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 1A, 2A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2EDS8265HXUMA2 Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057
2EDS8265HXUMA2
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLF35584QVVS1XUMA2 Infineon-TLF35584QV-ProductOverview-DataSheet-v01_00-EN.pdf?fileId=5546d46279cccfdb0179ce150fc81cbf
TLF35584QVVS1XUMA2
Hersteller: Infineon Technologies
Description: IC REG AUTO APPL 1OUT VQFN-48-31
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3V ~ 40V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Power Supply, Automotive Applications
Supplier Device Package: PG-VQFN-48-31
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+5.47 EUR
Mindestbestellmenge: 2500
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TLF35584QVVS1XUMA2 Infineon-TLF35584QV-ProductOverview-DataSheet-v01_00-EN.pdf?fileId=5546d46279cccfdb0179ce150fc81cbf
TLF35584QVVS1XUMA2
Hersteller: Infineon Technologies
Description: IC REG AUTO APPL 1OUT VQFN-48-31
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 5V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3V ~ 40V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Power Supply, Automotive Applications
Supplier Device Package: PG-VQFN-48-31
Part Status: Active
auf Bestellung 3380 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.67 EUR
10+8.63 EUR
100+6.70 EUR
Mindestbestellmenge: 2
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SGW30N60 INFNS14175-1.pdf?t.download=true&u=5oefqw
SGW30N60
Hersteller: Infineon Technologies
Description: IGBT, 41A I(C), 600V V(BR)CES, N
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO247-3-21
IGBT Type: NPT
Td (on/off) @ 25°C: 44ns/291ns
Switching Energy: 640µJ (on), 650µJ (off)
Test Condition: 400V, 30A, 11Ohm, 15V
Gate Charge: 140 nC
Part Status: Active
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 112 A
Power - Max: 250 W
Produkt ist nicht verfügbar
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SPI20N65C3
SPI20N65C3
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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TLE42712AKSA1 TLE 4271-2.pdf
TLE42712AKSA1
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 550MA TO220-7-11
Packaging: Bulk
Package / Case: TO-220-7 Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 550mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: P-TO220-7-11
Voltage - Output (Min/Fixed): 5V
Control Features: Reset, Watchdog
Part Status: Obsolete
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.7V @ 550mA
Protection Features: Over Current, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit
Current - Supply (Max): 90 mA
auf Bestellung 34338 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
205+2.45 EUR
Mindestbestellmenge: 205
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SPD08N50C3 Infineon-SPD08N50C3-DS-v02_06-en.pdf?fileId=db3a30433f1b26e8013f1ea5b45f0334
SPD08N50C3
Hersteller: Infineon Technologies
Description: COOLMOS, 7.6A, 500V, 0.6OHM, N-C
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
Produkt ist nicht verfügbar
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PMB3543E6327XQSA1
Hersteller: Infineon Technologies
Description: TELECOM IC
Packaging: Bulk
auf Bestellung 119 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+78.98 EUR
Mindestbestellmenge: 7
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FS3L200R10W3S7FB11BPSA1 Infineon-FS3L200R10W3S7F_B11-DataSheet-v03_00-EN.pdf?fileId=5546d46271bf4f920172079cc70479ac
FS3L200R10W3S7FB11BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY3B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 950 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 31 µA
Input Capacitance (Cies) @ Vce: 6.48 nF @ 25 V
auf Bestellung 19 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+258.24 EUR
16+231.12 EUR
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F3L400R10W3S7FB11BPSA1 Infineon-F3L400R10W3S7F_B11-DataSheet-v03_00-EN.pdf?fileId=5546d46271bf4f920172078a6a58799d
F3L400R10W3S7FB11BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY3B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 950 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 71 µA
Input Capacitance (Cies) @ Vce: 49.2 nF @ 25 V
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+319.25 EUR
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EVAL2ED020I12F2TOBO1 Infineon-EVAL_2ED020I12-F2-ApplicationNotes-v01_00-EN.pdf?fileId=db3a304340155f3d014029a78ed602f3
EVAL2ED020I12F2TOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR 2ED020I12-F2
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2ED020I12-F2
Supplied Contents: Board(s)
Part Status: Active
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+160.53 EUR
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KITAURIXTC275ARDSBTOBO1 Infineon-ShieldBuddy_TC275%20-UM-v02_08-EN.pdf?fileId=5546d46269e1c019016a54f0801a5590
KITAURIXTC275ARDSBTOBO1
Hersteller: Infineon Technologies
Description: SHIELDBUDDYTC275-AURIX
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: TriCore™
Utilized IC / Part: TC275
Platform: AURIX
auf Bestellung 145 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+298.55 EUR
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PTFA181001FV4R250FTMA1 PTFA181001%28E%2CF%29.pdf
PTFA181001FV4R250FTMA1
Hersteller: Infineon Technologies
Description: RF MOSFET LDMOS 28V H-37248-2
Packaging: Tape & Reel (TR)
Package / Case: 2-Flatpack, Fin Leads, Flanged
Current Rating (Amps): 1µA
Mounting Type: Surface Mount
Frequency: 1.88GHz
Power - Output: 100W
Gain: 16.5dB
Technology: LDMOS
Supplier Device Package: H-37248-2
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 750 mA
Produkt ist nicht verfügbar
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IRLR3636TRLPBF IRSDS10828-1.pdf?t.download=true&u=5oefqw
IRLR3636TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 50A, 10V
Power Dissipation (Max): 143W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3779 pF @ 50 V
auf Bestellung 668 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.57 EUR
13+1.42 EUR
Mindestbestellmenge: 12
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