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BFP420H6433XTMA1 BFP420H6433XTMA1 Infineon Technologies BFP420_Rev2013.pdf Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
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TLE42712GATMA TLE42712GATMA Infineon Technologies Infineon-TLE4271-2-DS-v02_70-EN.pdf?fileId=5546d46259d9a4bf0159f97a56393e6f Description: IC REG LINEAR FIXED LDO REG
Current - Supply (Max): 90 mA
Protection Features: Antisaturation, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.7V @ 550mA
PSRR: 54dB (100Hz)
Part Status: Active
Control Features: Delay, Inhibit, Reset, Watchdog
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: P-TO220-7-11
Number of Regulators: 1
Voltage - Input (Max): 40V
Output Configuration: Positive
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-220-7 Formed Leads
Packaging: Bulk
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 550mA
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IAUC24N10S5L300ATMA1 IAUC24N10S5L300ATMA1 Infineon Technologies Infineon-IAUC24N10S5L300-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a6284a70dcf Description: MOSFET N-CH 100V 24A TDSON-8-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 12µA
Supplier Device Package: PG-TDSON-8-33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
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BGAU1A10E6327XTSA1 BGAU1A10E6327XTSA1 Infineon Technologies Infineon-BGAU1A10-DS-v03_00-EN.pdf?fileId=5546d462636cc8fb0163926acb524baa Description: IC RF AMP LTE 5.15GHZ-5.925GHZ 1
Part Status: Last Time Buy
Test Frequency: 5GHz
P1dB: -1dBm
Noise Figure: 1.7dB ~ 6.5dB
Current - Supply: 5mA
Voltage - Supply: 1.7V ~ 1.9V
RF Type: LTE
Frequency: 5.15GHz ~ 5.925GHz
Mounting Type: Surface Mount
Package / Case: 10-UFQFN
Packaging: Cut Tape (CT)
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FS75R07W2E3B11ABOMA1 FS75R07W2E3B11ABOMA1 Infineon Technologies Infineon-FS75R07W2E3_B11A-DS-v03_00-en_de.pdf?fileId=db3a3043345a30bc01345aebc79e0071 Description: IGBT MODULES
Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
Current - Collector Cutoff (Max): 50 µA
Power - Max: 275 W
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 95 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: ACEPACK™ 2
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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ICE3AR1080JGXUMA1 ICE3AR1080JGXUMA1 Infineon Technologies Infineon-ICE3AR1080JG-DS-v01_00-EN.pdf?fileId=5546d46253f6505701549aaf4c0d7510 Description: IC OFFLINE SWITCH FLYBACK 12DSO
Power (Watts): 62 W
Part Status: Active
Voltage - Start Up: 17.3 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-12-19
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 800V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 75%
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Packaging: Tape & Reel (TR)
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ICE3AR1080JGXUMA1 ICE3AR1080JGXUMA1 Infineon Technologies Infineon-ICE3AR1080JG-DS-v01_00-EN.pdf?fileId=5546d46253f6505701549aaf4c0d7510 Description: IC OFFLINE SWITCH FLYBACK 12DSO
Power (Watts): 62 W
Part Status: Active
Voltage - Start Up: 17.3 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-12-19
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 800V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 75%
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Packaging: Cut Tape (CT)
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FS400R12A2T4BOSA1 FS400R12A2T4BOSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT MODULES
Packaging: Tray
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MB89133APFM-G-1019E1 Infineon Technologies ProductGuide_2008.1.pdf Description: IC MCU 8BIT 8KB MROM 48QFP
DigiKey Programmable: Not Verified
Number of I/O: 24
Part Status: Obsolete
Peripherals: POR, WDT
Connectivity: Serial I/O
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Core Size: 8-Bit
Data Converters: A/D 4x8b
Core Processor: F²MC-8L
Program Memory Type: Mask ROM
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 256 x 8
Program Memory Size: 8KB (8K x 8)
Speed: 4.2MHz
Mounting Type: Surface Mount
Package / Case: 48-QFP
Packaging: Tray
Supplier Device Package: 48-QFP (10x10)
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MB89538APMC-G-1019-JNE1 MB89538APMC-G-1019-JNE1 Infineon Technologies ProductGuide_2008.1.pdf Description: IC MCU 8BIT 48KB MROM 64LQFP
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Core Processor: F²MC-8L
Program Memory Type: Mask ROM
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 48KB (48K x 8)
Speed: 12.5MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 38
Part Status: Obsolete
Supplier Device Package: 64-LQFP (12x12)
Peripherals: POR, PWM, WDT
Connectivity: I²C, Serial I/O, UART/USART
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IRFH8330TRPBF IRFH8330TRPBF Infineon Technologies irfh8330pbf.pdf?fileId=5546d462533600a40153561fc2dc1f1f Description: MOSFET N-CH 30V 17A/56A PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PQFN (5x6)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 3.3W (Ta), 35W (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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BC857BWE6327 BC857BWE6327 Infineon Technologies INFNS16508-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 45V 0.1A PG-SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
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BC857BWH6327 BC857BWH6327 Infineon Technologies INFNS16508-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 45V 0.1A SOT323-3
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT323-3-1
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
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IR2154 IR2154 Infineon Technologies IR2154.pdf Description: IC GATE DRVR HALF-BRIDGE 8DIP
Part Status: Obsolete
Gate Type: MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 80ns, 45ns
Supplier Device Package: 8-PDIP
High Side Voltage - Max (Bootstrap): 600 V
Input Type: RC Input Circuit
Voltage - Supply: 10V ~ 15.6V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
DigiKey Programmable: Not Verified
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IR2154S IR2154S Infineon Technologies IR2154.pdf Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Rise / Fall Time (Typ): 80ns, 45ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: RC Input Circuit
Voltage - Supply: 10V ~ 15.6V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Part Status: Obsolete
Gate Type: MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
DigiKey Programmable: Not Verified
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IPB120N06S4H1ATMA2 IPB120N06S4H1ATMA2 Infineon Technologies Infineon-I120N06S4_H1-DS-v01_00-en.pdf?fileId=db3a30431ff988150120388c9cf60caf Description: MOSFET N-CH 60V 120A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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TDA5255 Infineon Technologies Description: ASK/FSK 434 MHZ WIRELESS TRANSVR
Part Status: Active
Serial Interfaces: I²C, SPI
RF Family/Standard: General ISM < 1GHz
Modulation: ASK, FSK
Supplier Device Package: PG-TSSOP-38
Current - Transmitting: 5.2mA ~ 17.4mA
Data Rate (Max): 100kbps
Current - Receiving: 8.6mA ~ 9.5mA
Power - Output: 13dBm
Voltage - Supply: 2.1V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: TxRx Only
Frequency: 434MHz
Mounting Type: Surface Mount
Sensitivity: -109dBm
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Packaging: Bulk
DigiKey Programmable: Not Verified
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IFX007TAUMA1 IFX007TAUMA1 Infineon Technologies IFX007T_Rev1.0_2018-02-21.pdf Description: IC HALF BRIDGE DRVR 55A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 8V ~ 40V
Rds On (Typ): 4.7mOhm LS, 5.3mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 55A
Technology: Power MOSFET
Voltage - Load: 8V ~ 40V
Supplier Device Package: PG-TO263-7-1
Fault Protection: Current Limiting, Open Load Detect, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Active
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S26KL512SDABHB020 S26KL512SDABHB020 Infineon Technologies Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f Description: IC FLASH 512MBIT HYPERBUS 24FBGA
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Grade: Automotive
Memory Organization: 64M x 8
Access Time: 96 ns
Memory Interface: HyperBus
Part Status: Active
Supplier Device Package: 24-FBGA (6x8)
Memory Format: FLASH
Clock Frequency: 100 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Packaging: Tray
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CY14B104NA-ZS45XE CY14B104NA-ZS45XE Infineon Technologies download Description: IC NVSRAM 4MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.63V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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CY14B104NA-BA20XI CY14B104NA-BA20XI Infineon Technologies download Description: IC NVSRAM 4MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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CY14B104NA-BA45XET CY14B104NA-BA45XET Infineon Technologies download Description: IC NVSRAM 4MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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CY14B104NA-ZS25XET CY14B104NA-ZS25XET Infineon Technologies download Description: IC NVSRAM 4MBIT PAR 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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CY14B104NA-ZS45XE CY14B104NA-ZS45XE Infineon Technologies download Description: IC NVSRAM 4MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.63V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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CY14B104NA-ZS25XE CY14B104NA-ZS25XE Infineon Technologies download Description: IC NVSRAM 4MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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DF23MR12W1M1PB11BPSA1 DF23MR12W1M1PB11BPSA1 Infineon Technologies Infineon-DF23MR12W1M1P_B11-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b7017153f0de295eb5 Description: MOSFET 2N-CH 1200V 25A AG-EASY1B
Part Status: Obsolete
Supplier Device Package: AG-EASY1B-2
Vgs(th) (Max) @ Id: 5.55V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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SIPC03S2N03LX3MA1 Infineon Technologies Description: LV POWER MOS
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BSB012N03LX3 G BSB012N03LX3 G Infineon Technologies BSB012N03LX3G.pdf Description: MOSFET N-CH 30V 39A/180A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 15 V
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T830N12TOFXPSA1 T830N12TOFXPSA1 Infineon Technologies T830N.pdf Description: SCR MODULE 1.8KV 1500A DO-200AB
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (AV)) (Max): 844 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Clamp On
Package / Case: DO-200AB, B-PUK
Packaging: Tray
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IRFR1018EPBF-INF Infineon Technologies Description: HEXFET POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: D-PAK (TO-252AA)
Vgs(th) (Max) @ Id: 4V @ 100µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 47A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
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CY2304NZZXC-1 CY2304NZZXC-1 Infineon Technologies Infineon-CY2304NZ_Four_Output_PCI-X_and_General_Purpose_Buffer-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebcd7a92ea3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC CLK ZDB 4OUT 140MHZ 8TSSOP
DigiKey Programmable: Not Verified
Number of Circuits: 1
PLL: No
Supplier Device Package: 8-TSSOP
Differential - Input:Output: No/No
Ratio - Input:Output: 1:4
Main Purpose: PCI Express (PCIe)
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C
Input: LVCMOS, LVTTL
Frequency - Max: 140MHz
Output: LVCMOS
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tube
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BTS409L1CHIPX2LA1 BTS409L1CHIPX2LA1 Infineon Technologies Description: AUTOMOTIVE HIGH SIDE SWITCH
Part Status: Active
Packaging: Bulk
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TLE4473GV53AUMA2 TLE4473GV53AUMA2 Infineon Technologies Infineon-TLE4473-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc101595f72a5831f31 Description: IC REG LINEAR 3.3V/5V DSO12-6
Qualification: AEC-Q100
Grade: Automotive
Current - Quiescent (Iq): 265 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 300mA, 180mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Current - Supply (Max): 20 mA
Protection Features: Over Current, Over Temperature, Short Circuit, Transient Voltage
Voltage Dropout (Max): -, 0.6V @ 100mA
PSRR: 65dB (100Hz), 65dB (100Hz)
Part Status: Active
Control Features: Inhibit, Reset, Watchdog
Voltage - Output (Min/Fixed): 3.3V, 5V
Supplier Device Package: P-DSO-12-6
Number of Regulators: 2
Voltage - Input (Max): 42V
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TLE4473GV53AUMA2 TLE4473GV53AUMA2 Infineon Technologies Infineon-TLE4473-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc101595f72a5831f31 Description: IC REG LINEAR 3.3V/5V DSO12-6
Qualification: AEC-Q100
Grade: Automotive
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 265 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 300mA, 180mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Current - Supply (Max): 20 mA
Protection Features: Over Current, Over Temperature, Short Circuit, Transient Voltage
Voltage Dropout (Max): -, 0.6V @ 100mA
PSRR: 65dB (100Hz), 65dB (100Hz)
Part Status: Active
Control Features: Inhibit, Reset, Watchdog
Voltage - Output (Min/Fixed): 3.3V, 5V
Supplier Device Package: P-DSO-12-6
Number of Regulators: 2
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TLE92623QXXUMA1 TLE92623QXXUMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC INTERFACE SPECIALIZED 48VQFN
Grade: Automotive
Part Status: Not For New Designs
Supplier Device Package: PG-VQFN-48-31
Interface: SPI
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
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IRFR3709ZTRLPBF IRFR3709ZTRLPBF Infineon Technologies irfr3709zpbf.pdf?fileId=5546d462533600a401535631a47a20c5 Description: MOSFET N-CH 30V 86A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 15 V
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BTN7960BAUMA1 BTN7960BAUMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC MOTOR DRIVER 8V-18V TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 47A
Interface: On/Off
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 8V ~ 18V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 8V ~ 18V
Supplier Device Package: PG-TO263-7-1
Motor Type - AC, DC: Brushed DC
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BTS282ZDELCO BTS282ZDELCO Infineon Technologies INFNS13361-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V
Drain to Source Voltage (Vdss): 49 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: P-TO220-7-3
Vgs(th) (Max) @ Id: 2V @ 240µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 36A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-7 Formed Leads
Packaging: Bulk
Produkt ist nicht verfügbar
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IRFS7430TRLPBF IRFS7430TRLPBF Infineon Technologies Infineon-IRFS7430-DS-v01_00-EN.pdf?fileId=5546d462576f3475015792dbfbd6000d Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14240 pF @ 25 V
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IRFS7430TRLPBF IRFS7430TRLPBF Infineon Technologies Infineon-IRFS7430-DS-v01_00-EN.pdf?fileId=5546d462576f3475015792dbfbd6000d Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14240 pF @ 25 V
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IPB65R660CFDAATMA1 IPB65R660CFDAATMA1 Infineon Technologies INFN-S-A0003823031-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 650V 6A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 3.2A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 543 pF @ 100 V
Qualification: AEC-Q101
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IPB65R660CFDATMA1 IPB65R660CFDATMA1 Infineon Technologies IPx65R660CFD.pdf Description: MOSFET N-CH 650V 6A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
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BAS1602VH6327XTSA1 BAS1602VH6327XTSA1 Infineon Technologies bas16series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141b93811b03ff Description: DIODE STANDARD 80V 200MA PGSC792
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: PG-SC79-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
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BAS7002VH6327XTSA1 BAS7002VH6327XTSA1 Infineon Technologies INFNS30154-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTTKY 70V 70MA PGSC7921
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: PG-SC79-2-1
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
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BAT6202VH6327XTSA1 BAT6202VH6327XTSA1 Infineon Technologies Infineon-BAT62-02V-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017eb4959b1821f7 Description: DIODE SCHOTTKY 40V 20MA PGSC7921
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Current - Average Rectified (Io): 20mA
Supplier Device Package: PG-SC79-2-1
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
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BAT6202VH6327XTSA1 BAT6202VH6327XTSA1 Infineon Technologies Infineon-BAT62-02V-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017eb4959b1821f7 Description: DIODE SCHOTTKY 40V 20MA PGSC7921
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Current - Average Rectified (Io): 20mA
Supplier Device Package: PG-SC79-2-1
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
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BBY5602VH6327XTSA1 BBY5602VH6327XTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: DIODE VARACTOR 10V SNGL PG-SC79
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 12.1pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C3
Supplier Device Package: PG-SC79-2-1
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 3.3
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IPB80N08S207ATMA1 IPB80N08S207ATMA1 Infineon Technologies Infineon-IPP_B_I80N08S2_07_GREEN-DS-v01_00-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b426df983adf&ack=t Description: MOSFET N-CH 75V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPB80N08S207ATMA1 IPB80N08S207ATMA1 Infineon Technologies Infineon-IPP_B_I80N08S2_07_GREEN-DS-v01_00-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b426df983adf&ack=t Description: MOSFET N-CH 75V 80A TO263-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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IPD70N04S307ATMA1 IPD70N04S307ATMA1 Infineon Technologies INFNS11352-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 4V @ 50µA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
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IRFI7536GPBF IRFI7536GPBF Infineon Technologies irfi7536gpbf.pdf Description: MOSFET N-CH 60V 86A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 75A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-220 Full Pack
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 48 V
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TLE92623BQXV33XUMA1 TLE92623BQXV33XUMA1 Infineon Technologies Infineon-TLE9262-3BQX%20V33-DS-v01_00-EN.pdf?fileId=5546d462602a9dc80160978ed9493954 Description: IC INTERFACE SPECIALIZED 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Voltage - Supply: 28V
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Part Status: Not For New Designs
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TLE92623BQXV33XUMA1 TLE92623BQXV33XUMA1 Infineon Technologies Infineon-TLE9262-3BQX%20V33-DS-v01_00-EN.pdf?fileId=5546d462602a9dc80160978ed9493954 Description: IC INTERFACE SPECIALIZED 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Voltage - Supply: 28V
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Part Status: Not For New Designs
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TLE92623BQXXUMA1 TLE92623BQXXUMA1 Infineon Technologies Infineon-TLE9262-3BQX-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801609785aa013951 Description: IC INTERFACE SPECIALIZED 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Voltage - Supply: 28V
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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TLE92623BQXXUMA1 TLE92623BQXXUMA1 Infineon Technologies Infineon-TLE9262-3BQX-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801609785aa013951 Description: IC INTERFACE SPECIALIZED 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Voltage - Supply: 28V
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Part Status: Not For New Designs
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10+4.76 EUR
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100+3.95 EUR
250+3.75 EUR
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IPB50R199CP IPB50R199CP Infineon Technologies INFNS15809-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 500V 17A TO263-3-2
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IRFHM8334TRPBF-INF IRFHM8334TRPBF-INF Infineon Technologies IRSDS19389-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 30V 13A/43A 8PQFN DL
Produkt ist nicht verfügbar
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T2563NH80TOHXOSA1 T2563NH80TOHXOSA1 Infineon Technologies Infineon-T2563NH-DS-v11_00-en_de.pdf?fileId=db3a304412b407950112b430fab552bb Description: SCR 8KV 3600A BG-T17240L-1
Packaging: Tray
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: 120°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 93000A @ 50Hz
Current - On State (It (AV)) (Max): 3330 A
Voltage - On State (Vtm) (Max): 2.95 V
Supplier Device Package: BG-T17240L-1
Current - On State (It (RMS)) (Max): 3600 A
Voltage - Off State: 8 kV
Produkt ist nicht verfügbar
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IRF7410TRPBF-1 IRF7410TRPBF-1 Infineon Technologies IRF7410TRPbF_10-16-14.pdf Description: MOSFET P-CH 12V 16A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8676 pF @ 10 V
Produkt ist nicht verfügbar
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BSL296SNH6327XTSA1 BSL296SNH6327XTSA1 Infineon Technologies BSL296SN.pdf Description: MOSFET N-CH 100V 1.4A TSOP-6
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 152.7 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TSOP6-6
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 1.26A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Bulk
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BFP420H6433XTMA1 BFP420_Rev2013.pdf
BFP420H6433XTMA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
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22+0.83 EUR
31+0.57 EUR
35+0.51 EUR
100+0.44 EUR
250+0.41 EUR
500+0.39 EUR
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TLE42712GATMA Infineon-TLE4271-2-DS-v02_70-EN.pdf?fileId=5546d46259d9a4bf0159f97a56393e6f
TLE42712GATMA
Hersteller: Infineon Technologies
Description: IC REG LINEAR FIXED LDO REG
Current - Supply (Max): 90 mA
Protection Features: Antisaturation, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.7V @ 550mA
PSRR: 54dB (100Hz)
Part Status: Active
Control Features: Delay, Inhibit, Reset, Watchdog
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: P-TO220-7-11
Number of Regulators: 1
Voltage - Input (Max): 40V
Output Configuration: Positive
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-220-7 Formed Leads
Packaging: Bulk
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 550mA
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IAUC24N10S5L300ATMA1 Infineon-IAUC24N10S5L300-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a6284a70dcf
IAUC24N10S5L300ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 24A TDSON-8-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 12µA
Supplier Device Package: PG-TDSON-8-33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BGAU1A10E6327XTSA1 Infineon-BGAU1A10-DS-v03_00-EN.pdf?fileId=5546d462636cc8fb0163926acb524baa
BGAU1A10E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF AMP LTE 5.15GHZ-5.925GHZ 1
Part Status: Last Time Buy
Test Frequency: 5GHz
P1dB: -1dBm
Noise Figure: 1.7dB ~ 6.5dB
Current - Supply: 5mA
Voltage - Supply: 1.7V ~ 1.9V
RF Type: LTE
Frequency: 5.15GHz ~ 5.925GHz
Mounting Type: Surface Mount
Package / Case: 10-UFQFN
Packaging: Cut Tape (CT)
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FS75R07W2E3B11ABOMA1 Infineon-FS75R07W2E3_B11A-DS-v03_00-en_de.pdf?fileId=db3a3043345a30bc01345aebc79e0071
FS75R07W2E3B11ABOMA1
Hersteller: Infineon Technologies
Description: IGBT MODULES
Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
Current - Collector Cutoff (Max): 50 µA
Power - Max: 275 W
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 95 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: ACEPACK™ 2
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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ICE3AR1080JGXUMA1 Infineon-ICE3AR1080JG-DS-v01_00-EN.pdf?fileId=5546d46253f6505701549aaf4c0d7510
ICE3AR1080JGXUMA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Power (Watts): 62 W
Part Status: Active
Voltage - Start Up: 17.3 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-12-19
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 800V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 75%
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Packaging: Tape & Reel (TR)
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2500+1.66 EUR
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ICE3AR1080JGXUMA1 Infineon-ICE3AR1080JG-DS-v01_00-EN.pdf?fileId=5546d46253f6505701549aaf4c0d7510
ICE3AR1080JGXUMA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Power (Watts): 62 W
Part Status: Active
Voltage - Start Up: 17.3 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-12-19
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 800V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 75%
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Packaging: Cut Tape (CT)
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5+3.54 EUR
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100+2.15 EUR
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FS400R12A2T4BOSA1 fundamentals-of-power-semiconductors
FS400R12A2T4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULES
Packaging: Tray
Produkt ist nicht verfügbar
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MB89133APFM-G-1019E1 ProductGuide_2008.1.pdf
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 8KB MROM 48QFP
DigiKey Programmable: Not Verified
Number of I/O: 24
Part Status: Obsolete
Peripherals: POR, WDT
Connectivity: Serial I/O
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Core Size: 8-Bit
Data Converters: A/D 4x8b
Core Processor: F²MC-8L
Program Memory Type: Mask ROM
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 256 x 8
Program Memory Size: 8KB (8K x 8)
Speed: 4.2MHz
Mounting Type: Surface Mount
Package / Case: 48-QFP
Packaging: Tray
Supplier Device Package: 48-QFP (10x10)
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MB89538APMC-G-1019-JNE1 ProductGuide_2008.1.pdf
MB89538APMC-G-1019-JNE1
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 48KB MROM 64LQFP
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Core Processor: F²MC-8L
Program Memory Type: Mask ROM
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 48KB (48K x 8)
Speed: 12.5MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 38
Part Status: Obsolete
Supplier Device Package: 64-LQFP (12x12)
Peripherals: POR, PWM, WDT
Connectivity: I²C, Serial I/O, UART/USART
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IRFH8330TRPBF irfh8330pbf.pdf?fileId=5546d462533600a40153561fc2dc1f1f
IRFH8330TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 17A/56A PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PQFN (5x6)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 3.3W (Ta), 35W (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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BC857BWE6327 INFNS16508-1.pdf?t.download=true&u=5oefqw
BC857BWE6327
Hersteller: Infineon Technologies
Description: TRANS PNP 45V 0.1A PG-SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
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BC857BWH6327 INFNS16508-1.pdf?t.download=true&u=5oefqw
BC857BWH6327
Hersteller: Infineon Technologies
Description: TRANS PNP 45V 0.1A SOT323-3
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT323-3-1
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
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AnzahlPreis
6512+0.08 EUR
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IR2154 IR2154.pdf
IR2154
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Part Status: Obsolete
Gate Type: MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 80ns, 45ns
Supplier Device Package: 8-PDIP
High Side Voltage - Max (Bootstrap): 600 V
Input Type: RC Input Circuit
Voltage - Supply: 10V ~ 15.6V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IR2154S IR2154.pdf
IR2154S
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Rise / Fall Time (Typ): 80ns, 45ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: RC Input Circuit
Voltage - Supply: 10V ~ 15.6V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Part Status: Obsolete
Gate Type: MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPB120N06S4H1ATMA2 Infineon-I120N06S4_H1-DS-v01_00-en.pdf?fileId=db3a30431ff988150120388c9cf60caf
IPB120N06S4H1ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TDA5255
Hersteller: Infineon Technologies
Description: ASK/FSK 434 MHZ WIRELESS TRANSVR
Part Status: Active
Serial Interfaces: I²C, SPI
RF Family/Standard: General ISM < 1GHz
Modulation: ASK, FSK
Supplier Device Package: PG-TSSOP-38
Current - Transmitting: 5.2mA ~ 17.4mA
Data Rate (Max): 100kbps
Current - Receiving: 8.6mA ~ 9.5mA
Power - Output: 13dBm
Voltage - Supply: 2.1V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: TxRx Only
Frequency: 434MHz
Mounting Type: Surface Mount
Sensitivity: -109dBm
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IFX007TAUMA1 IFX007T_Rev1.0_2018-02-21.pdf
IFX007TAUMA1
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRVR 55A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 8V ~ 40V
Rds On (Typ): 4.7mOhm LS, 5.3mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 55A
Technology: Power MOSFET
Voltage - Load: 8V ~ 40V
Supplier Device Package: PG-TO263-7-1
Fault Protection: Current Limiting, Open Load Detect, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Active
auf Bestellung 42588 Stücke:
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3+6.2 EUR
10+4.66 EUR
25+4.27 EUR
100+3.85 EUR
250+3.65 EUR
500+3.52 EUR
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S26KL512SDABHB020 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f
S26KL512SDABHB020
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Grade: Automotive
Memory Organization: 64M x 8
Access Time: 96 ns
Memory Interface: HyperBus
Part Status: Active
Supplier Device Package: 24-FBGA (6x8)
Memory Format: FLASH
Clock Frequency: 100 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Packaging: Tray
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2+15.95 EUR
10+14.8 EUR
25+14.34 EUR
50+13.99 EUR
100+13.65 EUR
338+13.05 EUR
676+12.84 EUR
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CY14B104NA-ZS45XE download
CY14B104NA-ZS45XE
Hersteller: Infineon Technologies
Description: IC NVSRAM 4MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.63V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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CY14B104NA-BA20XI download
CY14B104NA-BA20XI
Hersteller: Infineon Technologies
Description: IC NVSRAM 4MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY14B104NA-BA45XET download
CY14B104NA-BA45XET
Hersteller: Infineon Technologies
Description: IC NVSRAM 4MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY14B104NA-ZS25XET download
CY14B104NA-ZS25XET
Hersteller: Infineon Technologies
Description: IC NVSRAM 4MBIT PAR 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY14B104NA-ZS45XE download
CY14B104NA-ZS45XE
Hersteller: Infineon Technologies
Description: IC NVSRAM 4MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.63V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY14B104NA-ZS25XE download
CY14B104NA-ZS25XE
Hersteller: Infineon Technologies
Description: IC NVSRAM 4MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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DF23MR12W1M1PB11BPSA1 Infineon-DF23MR12W1M1P_B11-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b7017153f0de295eb5
DF23MR12W1M1PB11BPSA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 1200V 25A AG-EASY1B
Part Status: Obsolete
Supplier Device Package: AG-EASY1B-2
Vgs(th) (Max) @ Id: 5.55V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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1+134.15 EUR
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SIPC03S2N03LX3MA1
Hersteller: Infineon Technologies
Description: LV POWER MOS
Produkt ist nicht verfügbar
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BSB012N03LX3 G BSB012N03LX3G.pdf
BSB012N03LX3 G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 39A/180A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 15 V
Produkt ist nicht verfügbar
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T830N12TOFXPSA1 T830N.pdf
T830N12TOFXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.8KV 1500A DO-200AB
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (AV)) (Max): 844 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Clamp On
Package / Case: DO-200AB, B-PUK
Packaging: Tray
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2+182.97 EUR
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IRFR1018EPBF-INF
Hersteller: Infineon Technologies
Description: HEXFET POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: D-PAK (TO-252AA)
Vgs(th) (Max) @ Id: 4V @ 100µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 47A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Produkt ist nicht verfügbar
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CY2304NZZXC-1 Infineon-CY2304NZ_Four_Output_PCI-X_and_General_Purpose_Buffer-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebcd7a92ea3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY2304NZZXC-1
Hersteller: Infineon Technologies
Description: IC CLK ZDB 4OUT 140MHZ 8TSSOP
DigiKey Programmable: Not Verified
Number of Circuits: 1
PLL: No
Supplier Device Package: 8-TSSOP
Differential - Input:Output: No/No
Ratio - Input:Output: 1:4
Main Purpose: PCI Express (PCIe)
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C
Input: LVCMOS, LVTTL
Frequency - Max: 140MHz
Output: LVCMOS
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tube
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BTS409L1CHIPX2LA1
BTS409L1CHIPX2LA1
Hersteller: Infineon Technologies
Description: AUTOMOTIVE HIGH SIDE SWITCH
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar
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TLE4473GV53AUMA2 Infineon-TLE4473-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc101595f72a5831f31
TLE4473GV53AUMA2
Hersteller: Infineon Technologies
Description: IC REG LINEAR 3.3V/5V DSO12-6
Qualification: AEC-Q100
Grade: Automotive
Current - Quiescent (Iq): 265 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 300mA, 180mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Current - Supply (Max): 20 mA
Protection Features: Over Current, Over Temperature, Short Circuit, Transient Voltage
Voltage Dropout (Max): -, 0.6V @ 100mA
PSRR: 65dB (100Hz), 65dB (100Hz)
Part Status: Active
Control Features: Inhibit, Reset, Watchdog
Voltage - Output (Min/Fixed): 3.3V, 5V
Supplier Device Package: P-DSO-12-6
Number of Regulators: 2
Voltage - Input (Max): 42V
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AnzahlPreis
1000+3.47 EUR
2000+3.39 EUR
3000+3.35 EUR
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TLE4473GV53AUMA2 Infineon-TLE4473-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc101595f72a5831f31
TLE4473GV53AUMA2
Hersteller: Infineon Technologies
Description: IC REG LINEAR 3.3V/5V DSO12-6
Qualification: AEC-Q100
Grade: Automotive
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 265 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 300mA, 180mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Current - Supply (Max): 20 mA
Protection Features: Over Current, Over Temperature, Short Circuit, Transient Voltage
Voltage Dropout (Max): -, 0.6V @ 100mA
PSRR: 65dB (100Hz), 65dB (100Hz)
Part Status: Active
Control Features: Inhibit, Reset, Watchdog
Voltage - Output (Min/Fixed): 3.3V, 5V
Supplier Device Package: P-DSO-12-6
Number of Regulators: 2
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3+6.2 EUR
10+4.68 EUR
25+4.3 EUR
100+3.89 EUR
250+3.69 EUR
500+3.57 EUR
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TLE92623QXXUMA1 fundamentals-of-power-semiconductors
TLE92623QXXUMA1
Hersteller: Infineon Technologies
Description: IC INTERFACE SPECIALIZED 48VQFN
Grade: Automotive
Part Status: Not For New Designs
Supplier Device Package: PG-VQFN-48-31
Interface: SPI
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRFR3709ZTRLPBF irfr3709zpbf.pdf?fileId=5546d462533600a401535631a47a20c5
IRFR3709ZTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 86A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 15 V
Produkt ist nicht verfügbar
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BTN7960BAUMA1 fundamentals-of-power-semiconductors
BTN7960BAUMA1
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 8V-18V TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 47A
Interface: On/Off
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 8V ~ 18V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 8V ~ 18V
Supplier Device Package: PG-TO263-7-1
Motor Type - AC, DC: Brushed DC
Produkt ist nicht verfügbar
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BTS282ZDELCO INFNS13361-1.pdf?t.download=true&u=5oefqw
BTS282ZDELCO
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V
Drain to Source Voltage (Vdss): 49 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: P-TO220-7-3
Vgs(th) (Max) @ Id: 2V @ 240µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 36A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-7 Formed Leads
Packaging: Bulk
Produkt ist nicht verfügbar
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IRFS7430TRLPBF Infineon-IRFS7430-DS-v01_00-EN.pdf?fileId=5546d462576f3475015792dbfbd6000d
IRFS7430TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14240 pF @ 25 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
800+2.08 EUR
1600+1.94 EUR
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IRFS7430TRLPBF Infineon-IRFS7430-DS-v01_00-EN.pdf?fileId=5546d462576f3475015792dbfbd6000d
IRFS7430TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14240 pF @ 25 V
auf Bestellung 1735 Stücke:
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AnzahlPreis
4+5.86 EUR
10+3.83 EUR
100+2.68 EUR
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IPB65R660CFDAATMA1 INFN-S-A0003823031-1.pdf?t.download=true&u=5oefqw
IPB65R660CFDAATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 6A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 3.2A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 543 pF @ 100 V
Qualification: AEC-Q101
auf Bestellung 4006 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5+4.28 EUR
10+2.76 EUR
100+1.89 EUR
500+1.52 EUR
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IPB65R660CFDATMA1 IPx65R660CFD.pdf
IPB65R660CFDATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 6A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
auf Bestellung 97 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7+2.76 EUR
10+2.49 EUR
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BAS1602VH6327XTSA1 bas16series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141b93811b03ff
BAS1602VH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE STANDARD 80V 200MA PGSC792
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: PG-SC79-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
auf Bestellung 1560 Stücke:
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AnzahlPreis
125+0.14 EUR
213+0.083 EUR
261+0.068 EUR
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BAS7002VH6327XTSA1 INFNS30154-1.pdf?t.download=true&u=5oefqw
BAS7002VH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 70V 70MA PGSC7921
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: PG-SC79-2-1
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 44602 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
34+0.53 EUR
55+0.32 EUR
100+0.2 EUR
500+0.15 EUR
1000+0.13 EUR
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BAT6202VH6327XTSA1 Infineon-BAT62-02V-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017eb4959b1821f7
BAT6202VH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 40V 20MA PGSC7921
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Current - Average Rectified (Io): 20mA
Supplier Device Package: PG-SC79-2-1
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.22 EUR
6000+0.2 EUR
9000+0.19 EUR
Mindestbestellmenge: 3000 Stücke
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BAT6202VH6327XTSA1 Infineon-BAT62-02V-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017eb4959b1821f7
BAT6202VH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 40V 20MA PGSC7921
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Current - Average Rectified (Io): 20mA
Supplier Device Package: PG-SC79-2-1
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
auf Bestellung 14864 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
19+0.97 EUR
30+0.6 EUR
100+0.38 EUR
500+0.29 EUR
1000+0.26 EUR
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BBY5602VH6327XTSA1 fundamentals-of-power-semiconductors
BBY5602VH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE VARACTOR 10V SNGL PG-SC79
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 12.1pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C3
Supplier Device Package: PG-SC79-2-1
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 3.3
auf Bestellung 20901 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
67+0.26 EUR
81+0.22 EUR
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IPB80N08S207ATMA1 Infineon-IPP_B_I80N08S2_07_GREEN-DS-v01_00-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b426df983adf&ack=t
IPB80N08S207ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPB80N08S207ATMA1 Infineon-IPP_B_I80N08S2_07_GREEN-DS-v01_00-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b426df983adf&ack=t
IPB80N08S207ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 80A TO263-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 389 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+8.91 EUR
10+5.94 EUR
100+4.27 EUR
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IPD70N04S307ATMA1 INFNS11352-1.pdf?t.download=true&u=5oefqw
IPD70N04S307ATMA1
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 4V @ 50µA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Produkt ist nicht verfügbar
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IRFI7536GPBF irfi7536gpbf.pdf
IRFI7536GPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 86A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 75A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-220 Full Pack
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 48 V
auf Bestellung 1330 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
175+2.9 EUR
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TLE92623BQXV33XUMA1 Infineon-TLE9262-3BQX%20V33-DS-v01_00-EN.pdf?fileId=5546d462602a9dc80160978ed9493954
TLE92623BQXV33XUMA1
Hersteller: Infineon Technologies
Description: IC INTERFACE SPECIALIZED 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Voltage - Supply: 28V
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Part Status: Not For New Designs
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+3.15 EUR
Mindestbestellmenge: 2500 Stücke
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TLE92623BQXV33XUMA1 Infineon-TLE9262-3BQX%20V33-DS-v01_00-EN.pdf?fileId=5546d462602a9dc80160978ed9493954
TLE92623BQXV33XUMA1
Hersteller: Infineon Technologies
Description: IC INTERFACE SPECIALIZED 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Voltage - Supply: 28V
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Part Status: Not For New Designs
auf Bestellung 9029 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+6.28 EUR
10+4.76 EUR
25+4.37 EUR
100+3.95 EUR
250+3.75 EUR
500+3.63 EUR
1000+3.53 EUR
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TLE92623BQXXUMA1 Infineon-TLE9262-3BQX-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801609785aa013951
TLE92623BQXXUMA1
Hersteller: Infineon Technologies
Description: IC INTERFACE SPECIALIZED 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Voltage - Supply: 28V
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Part Status: Not For New Designs
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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TLE92623BQXXUMA1 Infineon-TLE9262-3BQX-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801609785aa013951
TLE92623BQXXUMA1
Hersteller: Infineon Technologies
Description: IC INTERFACE SPECIALIZED 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Voltage - Supply: 28V
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Part Status: Not For New Designs
auf Bestellung 2120 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+6.28 EUR
10+4.76 EUR
25+4.37 EUR
100+3.95 EUR
250+3.75 EUR
500+3.63 EUR
1000+3.53 EUR
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IPB50R199CP INFNS15809-1.pdf?t.download=true&u=5oefqw
IPB50R199CP
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 17A TO263-3-2
Produkt ist nicht verfügbar
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IRFHM8334TRPBF-INF IRSDS19389-1.pdf?t.download=true&u=5oefqw
IRFHM8334TRPBF-INF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 13A/43A 8PQFN DL
Produkt ist nicht verfügbar
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T2563NH80TOHXOSA1 Infineon-T2563NH-DS-v11_00-en_de.pdf?fileId=db3a304412b407950112b430fab552bb
T2563NH80TOHXOSA1
Hersteller: Infineon Technologies
Description: SCR 8KV 3600A BG-T17240L-1
Packaging: Tray
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: 120°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 93000A @ 50Hz
Current - On State (It (AV)) (Max): 3330 A
Voltage - On State (Vtm) (Max): 2.95 V
Supplier Device Package: BG-T17240L-1
Current - On State (It (RMS)) (Max): 3600 A
Voltage - Off State: 8 kV
Produkt ist nicht verfügbar
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IRF7410TRPBF-1 IRF7410TRPbF_10-16-14.pdf
IRF7410TRPBF-1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 12V 16A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8676 pF @ 10 V
Produkt ist nicht verfügbar
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BSL296SNH6327XTSA1 BSL296SN.pdf
BSL296SNH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 1.4A TSOP-6
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 152.7 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TSOP6-6
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 1.26A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Bulk
auf Bestellung 108300 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1011+0.46 EUR
Mindestbestellmenge: 1011 Stücke
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