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STT2200N18P55XPSA1 STT2200N18P55XPSA1 Infineon Technologies Infineon-STT2200N18P55-DataSheet-v03_01-EN.pdf?fileId=5546d46272aa54c00172bc99b5485675 Description: THYR / DIODE MODULE DK
auf Bestellung 5 Stücke:
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1+1204.56 EUR
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IRF9956TRPBF Infineon Technologies irf9956pbf.pdf?fileId=5546d462533600a40153561210491dd9 Description: MOSFET 2N-CH 30V 3.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
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17+1.09 EUR
100+0.76 EUR
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XC2785X104F80LABKXUMA1 XC2785X104F80LABKXUMA1 Infineon Technologies XC2785x.pdf Description: IC MCU 16BIT 144LQFP
Produkt ist nicht verfügbar
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BSL716SNH6327XTSA1 BSL716SNH6327XTSA1 Infineon Technologies BSL716SN.pdf Description: MOSFET N-CH 75V 2.5A TSOP-6
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 218µA
Supplier Device Package: PG-TSOP6-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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ISP650P06NMXTSA1 ISP650P06NMXTSA1 Infineon Technologies Infineon-ISP650P06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a06cc34e37280 Description: MOSFET P-CH 60V 3.7A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.7A, 10V
Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.037mA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
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11+1.71 EUR
100+1.15 EUR
500+0.91 EUR
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AUIRF4104 AUIRF4104 Infineon Technologies IRSDS10905-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 40V 75A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 75A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Qualification: AEC-Q101
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KP234XTMA1 KP234XTMA1 Infineon Technologies INFNS15311-1.pdf?t.download=true&u=5oefqw Description: SENSOR 16.68PSIA 4.7V DSOF8-16
Features: Amplified Output, Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 1.33 V ~ 4.7 V
Operating Pressure: 5.8PSI ~ 16.68PSI (40kPa ~ 115kPa)
Pressure Type: Absolute
Accuracy: ±0.652PSI (±4.5kPa)
Operating Temperature: -40°C ~ 125°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Port Style: No Port
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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5+6.93 EUR
10+6.64 EUR
25+6.29 EUR
50+6.05 EUR
100+5.83 EUR
500+5.44 EUR
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EVALM1CTF610N3TOBO1 EVALM1CTF610N3TOBO1 Infineon Technologies Infineon-IM393-M6F-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a947c0278da Description: EVAL BOARD FOR IM393-M6F
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IM393-M6F
Supplied Contents: Board(s)
Part Status: Obsolete
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IRF5805TRPBF-INF Infineon Technologies irf5805pbf.pdf?fileId=5546d462533600a4015355e3f3be19ba Description: IRF5805 - TRANSISTOR
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 3.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 511 pF @ 25 V
Produkt ist nicht verfügbar
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T6900N95L204A11XPSA1 Infineon Technologies Description: HIGH POWER THYR / DIO
Packaging: Tray
Part Status: Active
Produkt ist nicht verfügbar
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XMC1403Q064X0200AAXUMA1 XMC1403Q064X0200AAXUMA1 Infineon Technologies Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: IC MCU 32BIT 200KB FLASH 64VQFN
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-64-6
Part Status: Active
Number of I/O: 48
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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XMC1403Q064X0200AAXUMA1 XMC1403Q064X0200AAXUMA1 Infineon Technologies Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: IC MCU 32BIT 200KB FLASH 64VQFN
Packaging: Cut Tape (CT)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-64-6
Part Status: Active
Number of I/O: 48
DigiKey Programmable: Not Verified
auf Bestellung 616 Stücke:
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4+5.53 EUR
10+4.16 EUR
25+3.82 EUR
100+3.45 EUR
250+3.27 EUR
500+3.16 EUR
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ILD1150 ILD1150 Infineon Technologies INFNS19121-1.pdf?t.download=true&u=5oefqw Description: LED DRIVER
Packaging: Bulk
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 100kHz ~ 500kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Commercial & Industrial Lighting
Internal Switch(s): No
Topology: Flyback, SEPIC, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: PG-SSOP-14
Dimming: PWM
Voltage - Supply (Min): 4.75V
Voltage - Supply (Max): 45V
Part Status: Active
Produkt ist nicht verfügbar
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SPP15P10PH SPP15P10PH Infineon Technologies Infineon-SPP15P10P_H_G-DS-v01_07-en.pdf?fileId=db3a3043321e49940132246d96be5a7e Description: 15A, 100V, 0.24OHM, P-CHANNEL,
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 10.6A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1.54mA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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507+0.95 EUR
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IPDD60R080G7XTMA1 IPDD60R080G7XTMA1 Infineon Technologies Infineon-IPDD60R080G7-DS-v02_00-EN.pdf?fileId=5546d4626102d35a016170882f757a07 Description: MOSFET N-CH 600V 29A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 9.7A, 10V
Power Dissipation (Max): 174W (Tc)
Vgs(th) (Max) @ Id: 4V @ 490µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 400 V
auf Bestellung 2376 Stücke:
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3+6.09 EUR
10+5.27 EUR
100+5.1 EUR
500+4.81 EUR
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BTS72002EPADAUGHBRDTOBO1 BTS72002EPADAUGHBRDTOBO1 Infineon Technologies Infineon-Customer_evaluation_kit%20_description-UserManual-v01_01-EN.pdf?fileId=5546d4626b2d8e69016bac9ebb6b24c7 Description: PROFET +2 12V BTS7200-2EPA DAUG
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7200-2EPA
Part Status: Active
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BTS56033LBBAUMA1 Infineon Technologies INFNS27202-1.pdf?t.download=true&u=5oefqw Description: SPOC PLUS 12V SPI POWER CONTROLL
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PEB2260NV3.0 Infineon Technologies Description: SICOFI SIGNAL PROCESSING CODEC F
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31+18.14 EUR
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PEB2260NV3.0SICOFI Infineon Technologies Description: SICOFI CODEC FILTER
Packaging: Bulk
Part Status: Active
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28+19.36 EUR
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PEB2260NV3.0-SICOFI Infineon Technologies Description: SICOFI CODEC FILTER
Packaging: Bulk
Part Status: Active
auf Bestellung 2350 Stücke:
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28+19.36 EUR
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PEF2260NV3.0 Infineon Technologies Description: SICOFI SIGNAL PROCESSING CODEC F
Packaging: Bulk
auf Bestellung 2198 Stücke:
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19+27.09 EUR
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ESD205B102ELE6327XTMA1 ESD205B102ELE6327XTMA1 Infineon Technologies ESD205-B1.pdf Description: TVS DIODE 5.5VWM 9V PGTSLP219
Packaging: Bulk
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-TSLP-2-19
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power - Peak Pulse: 30W
Power Line Protection: No
Part Status: Not For New Designs
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1648+0.27 EUR
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IPB032N10N5ATMA1 IPB032N10N5ATMA1 Infineon Technologies Infineon-IPB032N10N5-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b5c47b25335ca Description: MOSFET N-CH 100V 166A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 166A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 83A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 125µA
Supplier Device Package: PG-TO263-7
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 50 V
auf Bestellung 1773 Stücke:
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3+7 EUR
10+4.63 EUR
100+3.28 EUR
500+3.05 EUR
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IRFHM9331TR2PBF IRFHM9331TR2PBF Infineon Technologies irfhm9331pbf.pdf?fileId=5546d462533600a4015356237f7e1f59 Description: MOSFET P-CH 30V 11A 3X3 PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 11A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: PQFN (3x3)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1543 pF @ 25 V
Produkt ist nicht verfügbar
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BC859-C BC859-C Infineon Technologies INFNS16508-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 30V 0.1A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 250 mW
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13172+0.034 EUR
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F423MR12W1M1PB11BPSA1 F423MR12W1M1PB11BPSA1 Infineon Technologies Infineon-F4-23MR12W1M1P_B11-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016d436f59f37dd3 Description: MOSFET 4N-CH 1200V 50A AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A
Input Capacitance (Ciss) (Max) @ Vds: 3.68nF @ 800V
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 50A, 15V
Gate Charge (Qg) (Max) @ Vgs: 124nC @ 15V
Vgs(th) (Max) @ Id: 5.5V @ 20mA
Supplier Device Package: AG-EASY1B-2
Part Status: Obsolete
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1+231.67 EUR
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F423MR12W1M1B11BOMA1 F423MR12W1M1B11BOMA1 Infineon Technologies Infineon-F4-23MR12W1M1_B11-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690e9d9fb63802 Description: LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1BM-2
IGBT Type: Trench
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Input Capacitance (Cies) @ Vce: 3.68 nF @ 800 V
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1+250.61 EUR
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62-0258PBF Infineon Technologies Description: MOSFET P-CH 30V 9.2A 8-SO
Produkt ist nicht verfügbar
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ESD207B102ELSE6327XTSA1 ESD207B102ELSE6327XTSA1 Infineon Technologies ESD207-B1-02.pdf Description: TVS DIODE 3.3VWM 8.1VC PGTSSLP23
Packaging: Bulk
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 14pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSSLP-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.65V
Voltage - Clamping (Max) @ Ipp: 8.1V
Power Line Protection: No
Part Status: Obsolete
auf Bestellung 2200769 Stücke:
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5453+0.093 EUR
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FS25R12KT3BOSA1 FS25R12KT3BOSA1 Infineon Technologies Infineon-FS25R12KT3-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b431414d53ef Description: IGBT MOD 1200V 40A 145W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 145 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 1.8 nF @ 25 V
Produkt ist nicht verfügbar
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IPG20N04S409ATMA1 IPG20N04S409ATMA1 Infineon Technologies INFNS15593-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CHANNEL_30/40V
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BCR601XUMA1 BCR601XUMA1 Infineon Technologies Infineon-BCR601-DS-v01_01-EN.pdf?fileId=5546d46268554f4a016855b5d62d0023 Description: IC LED DRVR LIN ANALOG 10MA 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: LED Lighting
Current - Output / Channel: 10mA
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: PG-DSO-8
Dimming: Analog
Voltage - Supply (Max): 60V
Part Status: Active
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BCR601XUMA1 BCR601XUMA1 Infineon Technologies Infineon-BCR601-DS-v01_01-EN.pdf?fileId=5546d46268554f4a016855b5d62d0023 Description: IC LED DRVR LIN ANALOG 10MA 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: LED Lighting
Current - Output / Channel: 10mA
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: PG-DSO-8
Dimming: Analog
Voltage - Supply (Max): 60V
Part Status: Active
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IPU80R1K4CEBKMA1 IPU80R1K4CEBKMA1 Infineon Technologies Infineon-IPX80R1K4CE-DS-v02_01-en.pdf?fileId=db3a304340155f3d01402f3b471926eb Description: MOSFET N-CH 800V 3.9A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Supplier Device Package: PG-TO251-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
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BGSF1717MN26E6327XTSA1 BGSF1717MN26E6327XTSA1 Infineon Technologies BGSF1717MN26.pdf Description: IC RF SWITCH SP7T 2.7GHZ TSNP26
Packaging: Bulk
Package / Case: 26-WFQFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP7T
RF Type: General Purpose
Voltage - Supply: 1.2V ~ 1.8V
Frequency Range: 100MHz ~ 2.7GHz
Supplier Device Package: PG-TSNP-26-3
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TLS810A1LDV33XUMA1 TLS810A1LDV33XUMA1 Infineon Technologies Infineon-TLS810A1LD+V33-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc1015921017a7b3679 Description: IC REG LIN 3.3V 100MA TSON-102
Packaging: Cut Tape (CT)
Package / Case: 10-TFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TSON-10-2
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.65V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 15 µA
Qualification: AEC-Q100
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IPA60R600E6XKSA1 IPA60R600E6XKSA1 Infineon Technologies IPA60R600E6_2_0.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a304327b8975001281b23402b1aa0 Description: MOSFET N-CH 600V 7.3A TO220-FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
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IPA60R520CP IPA60R520CP Infineon Technologies INFNS17418-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 100 V
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IPA60R280E6 IPA60R280E6 Infineon Technologies INFN-S-A0004583476-1.pdf?t.download=true&u=5oefqw Description: 600V 0.28OHM N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 430µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
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IPA60R299CP IPA60R299CP Infineon Technologies INFN-S-A0004583224-1.pdf?t.download=true&u=5oefqw Description: 600V COOLMOS POWER TRANSISTOR
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
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IPA60R190E6 IPA60R190E6 Infineon Technologies INFN-S-A0003614948-1.pdf?t.download=true&u=5oefqw Description: 600V 0.19OHM N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 630µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
Produkt ist nicht verfügbar
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IPA60R165CP IPA60R165CP Infineon Technologies INFNS16943-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 21A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 790µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
Produkt ist nicht verfügbar
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IPA60R600E6 IPA60R600E6 Infineon Technologies INFN-S-A0004583464-1.pdf?t.download=true&u=5oefqw Description: 600V, 0.6OHM, N-CHANNEL, MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
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IPA60R520C6 IPA60R520C6 Infineon Technologies INFN-S-A0001300323-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 230µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V
Produkt ist nicht verfügbar
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IPA60R520C6XKSA1 IPA60R520C6XKSA1 Infineon Technologies IPA60R520C6.pdf Description: MOSFET N-CH 600V 8.1A TO220-FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 230µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V
auf Bestellung 111009 Stücke:
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BAT1504RE6152HTSA1 BAT1504RE6152HTSA1 Infineon Technologies Infineon-BAT15-04R-DS-v02_00-EN.pdf?fileId=5546d46265f064ff0166389615154e83 Description: RF DIODE SCHOTTKY 4V PG-SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.25pF @ 0V, 1MHz
Resistance @ If, F: 18Ohm @ 5mA, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 110 mA
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IRGP30B120KD-EP-INF Infineon Technologies Description: MOTOR CONTROL CO-PACK IGBT W/ULT
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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BAR161E6327HTSA1 BAR161E6327HTSA1 Infineon Technologies Bar14_15_16.pdf Description: RF DIODE PIN 100V 250MW PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.5pF @ 50V, 1MHz
Resistance @ If, F: 12Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 100V
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Current - Max: 140 mA
Power Dissipation (Max): 250 mW
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BSC028N06NSSCATMA1 BSC028N06NSSCATMA1 Infineon Technologies Infineon-BSC028N06NSSC-DataSheet-v02_01-EN.pdf?fileId=5546d462727878c201727efd2c445c09 Description: MOSFET N-CH 60V 137A WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 137A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-WSON-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3375 pF @ 30 V
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BSC028N06NSSCATMA1 BSC028N06NSSCATMA1 Infineon Technologies Infineon-BSC028N06NSSC-DataSheet-v02_01-EN.pdf?fileId=5546d462727878c201727efd2c445c09 Description: MOSFET N-CH 60V 137A WSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 137A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-WSON-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3375 pF @ 30 V
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XMC1404Q048X0200AAXUMA1 XMC1404Q048X0200AAXUMA1 Infineon Technologies Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: IC MCU 32BIT 200KB FLASH 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-73
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
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XMC1404Q048X0200AAXUMA1 XMC1404Q048X0200AAXUMA1 Infineon Technologies Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: IC MCU 32BIT 200KB FLASH 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-73
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SIDC42D120E6X1SA4 Infineon Technologies SIDC42D120E6_L4192P.pdf?folderId=db3a304412b407950112b435e2a46402&fileId=db3a304412b407950112b435e3206403 Description: DIODE GP 1.2KV 50A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Produkt ist nicht verfügbar
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SIDC42D120F6X1SA3 Infineon Technologies SIDC42D120F6_L4195M.pdf?folderId=db3a304412b407950112b435635962d8&fileId=db3a304412b407950112b43563d462d9 Description: DIODE GP 1.2KV 50A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
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111-4181PBF Infineon Technologies Description: IC GATE DRIVER SMD
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TLE9183QKXUMA1 TLE9183QKXUMA1 Infineon Technologies Infineon-TLE9183QK-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8900bb570189018597be106e Description: IC GATE DRVR HALF-BRIDGE 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: PG-LQFP-64-28
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 3
Gate Type: MOSFET (N-Channel)
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q101
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BCR 521 E6327 Infineon Technologies INFNS16393-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
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BCW60DE6327 BCW60DE6327 Infineon Technologies INFNS11039-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 32V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
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7397+0.065 EUR
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BCW 60FF E6327 BCW 60FF E6327 Infineon Technologies INFNS11039-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 32V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
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6340+0.088 EUR
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BCW 60D E6327 BCW 60D E6327 Infineon Technologies INFNS11039-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 32V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
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8013+0.07 EUR
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STT2200N18P55XPSA1 Infineon-STT2200N18P55-DataSheet-v03_01-EN.pdf?fileId=5546d46272aa54c00172bc99b5485675
STT2200N18P55XPSA1
Hersteller: Infineon Technologies
Description: THYR / DIODE MODULE DK
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IRF9956TRPBF irf9956pbf.pdf?fileId=5546d462533600a40153561210491dd9
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 3.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
auf Bestellung 297 Stücke:
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Anzahl Preis
15+1.25 EUR
17+1.09 EUR
100+0.76 EUR
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XC2785X104F80LABKXUMA1 XC2785x.pdf
XC2785X104F80LABKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 144LQFP
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BSL716SNH6327XTSA1 BSL716SN.pdf
BSL716SNH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 2.5A TSOP-6
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 218µA
Supplier Device Package: PG-TSOP6-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 38420 Stücke:
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Anzahl Preis
1575+0.29 EUR
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ISP650P06NMXTSA1 Infineon-ISP650P06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a06cc34e37280
ISP650P06NMXTSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 3.7A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.7A, 10V
Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.037mA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
auf Bestellung 2679 Stücke:
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Anzahl Preis
7+2.71 EUR
11+1.71 EUR
100+1.15 EUR
500+0.91 EUR
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AUIRF4104 IRSDS10905-1.pdf?t.download=true&u=5oefqw
AUIRF4104
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 75A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 75A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 650 Stücke:
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Anzahl Preis
164+2.78 EUR
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KP234XTMA1 INFNS15311-1.pdf?t.download=true&u=5oefqw
KP234XTMA1
Hersteller: Infineon Technologies
Description: SENSOR 16.68PSIA 4.7V DSOF8-16
Features: Amplified Output, Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 1.33 V ~ 4.7 V
Operating Pressure: 5.8PSI ~ 16.68PSI (40kPa ~ 115kPa)
Pressure Type: Absolute
Accuracy: ±0.652PSI (±4.5kPa)
Operating Temperature: -40°C ~ 125°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Port Style: No Port
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 1528 Stücke:
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Anzahl Preis
3+7.73 EUR
5+6.93 EUR
10+6.64 EUR
25+6.29 EUR
50+6.05 EUR
100+5.83 EUR
500+5.44 EUR
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EVALM1CTF610N3TOBO1 Infineon-IM393-M6F-DS-v02_00-EN.pdf?fileId=5546d462696dbf1201699a947c0278da
EVALM1CTF610N3TOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IM393-M6F
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IM393-M6F
Supplied Contents: Board(s)
Part Status: Obsolete
auf Bestellung 5 Stücke:
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Anzahl Preis
1+210.88 EUR
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IRF5805TRPBF-INF irf5805pbf.pdf?fileId=5546d462533600a4015355e3f3be19ba
Hersteller: Infineon Technologies
Description: IRF5805 - TRANSISTOR
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 3.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 511 pF @ 25 V
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T6900N95L204A11XPSA1
Hersteller: Infineon Technologies
Description: HIGH POWER THYR / DIO
Packaging: Tray
Part Status: Active
Produkt ist nicht verfügbar
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XMC1403Q064X0200AAXUMA1 Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1403Q064X0200AAXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 200KB FLASH 64VQFN
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-64-6
Part Status: Active
Number of I/O: 48
DigiKey Programmable: Not Verified
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XMC1403Q064X0200AAXUMA1 Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1403Q064X0200AAXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 200KB FLASH 64VQFN
Packaging: Cut Tape (CT)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-64-6
Part Status: Active
Number of I/O: 48
DigiKey Programmable: Not Verified
auf Bestellung 616 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.53 EUR
10+4.16 EUR
25+3.82 EUR
100+3.45 EUR
250+3.27 EUR
500+3.16 EUR
Mindestbestellmenge: 4
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ILD1150 INFNS19121-1.pdf?t.download=true&u=5oefqw
ILD1150
Hersteller: Infineon Technologies
Description: LED DRIVER
Packaging: Bulk
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 100kHz ~ 500kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Commercial & Industrial Lighting
Internal Switch(s): No
Topology: Flyback, SEPIC, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: PG-SSOP-14
Dimming: PWM
Voltage - Supply (Min): 4.75V
Voltage - Supply (Max): 45V
Part Status: Active
Produkt ist nicht verfügbar
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SPP15P10PH Infineon-SPP15P10P_H_G-DS-v01_07-en.pdf?fileId=db3a3043321e49940132246d96be5a7e
SPP15P10PH
Hersteller: Infineon Technologies
Description: 15A, 100V, 0.24OHM, P-CHANNEL,
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 10.6A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1.54mA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 944 Stücke:
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Anzahl Preis
507+0.95 EUR
Mindestbestellmenge: 507
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IPDD60R080G7XTMA1 Infineon-IPDD60R080G7-DS-v02_00-EN.pdf?fileId=5546d4626102d35a016170882f757a07
IPDD60R080G7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 29A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 9.7A, 10V
Power Dissipation (Max): 174W (Tc)
Vgs(th) (Max) @ Id: 4V @ 490µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 400 V
auf Bestellung 2376 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.09 EUR
10+5.27 EUR
100+5.1 EUR
500+4.81 EUR
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BTS72002EPADAUGHBRDTOBO1 Infineon-Customer_evaluation_kit%20_description-UserManual-v01_01-EN.pdf?fileId=5546d4626b2d8e69016bac9ebb6b24c7
BTS72002EPADAUGHBRDTOBO1
Hersteller: Infineon Technologies
Description: PROFET +2 12V BTS7200-2EPA DAUG
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7200-2EPA
Part Status: Active
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+86.45 EUR
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BTS56033LBBAUMA1 INFNS27202-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: SPOC PLUS 12V SPI POWER CONTROLL
auf Bestellung 67782 Stücke:
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PEB2260NV3.0
Hersteller: Infineon Technologies
Description: SICOFI SIGNAL PROCESSING CODEC F
auf Bestellung 14183 Stücke:
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Anzahl Preis
31+18.14 EUR
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PEB2260NV3.0SICOFI
Hersteller: Infineon Technologies
Description: SICOFI CODEC FILTER
Packaging: Bulk
Part Status: Active
auf Bestellung 31000 Stücke:
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Anzahl Preis
28+19.36 EUR
Mindestbestellmenge: 28
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PEB2260NV3.0-SICOFI
Hersteller: Infineon Technologies
Description: SICOFI CODEC FILTER
Packaging: Bulk
Part Status: Active
auf Bestellung 2350 Stücke:
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Anzahl Preis
28+19.36 EUR
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PEF2260NV3.0
Hersteller: Infineon Technologies
Description: SICOFI SIGNAL PROCESSING CODEC F
Packaging: Bulk
auf Bestellung 2198 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+27.09 EUR
Mindestbestellmenge: 19
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ESD205B102ELE6327XTMA1 ESD205-B1.pdf
ESD205B102ELE6327XTMA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5.5VWM 9V PGTSLP219
Packaging: Bulk
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-TSLP-2-19
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power - Peak Pulse: 30W
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 87516 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1648+0.27 EUR
Mindestbestellmenge: 1648
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IPB032N10N5ATMA1 Infineon-IPB032N10N5-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b5c47b25335ca
IPB032N10N5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 166A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 166A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 83A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 125µA
Supplier Device Package: PG-TO263-7
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 50 V
auf Bestellung 1773 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7 EUR
10+4.63 EUR
100+3.28 EUR
500+3.05 EUR
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IRFHM9331TR2PBF irfhm9331pbf.pdf?fileId=5546d462533600a4015356237f7e1f59
IRFHM9331TR2PBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 11A 3X3 PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 11A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: PQFN (3x3)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1543 pF @ 25 V
Produkt ist nicht verfügbar
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BC859-C INFNS16508-1.pdf?t.download=true&u=5oefqw
BC859-C
Hersteller: Infineon Technologies
Description: TRANS PNP 30V 0.1A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 250 mW
auf Bestellung 26800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13172+0.034 EUR
Mindestbestellmenge: 13172
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F423MR12W1M1PB11BPSA1 Infineon-F4-23MR12W1M1P_B11-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016d436f59f37dd3
F423MR12W1M1PB11BPSA1
Hersteller: Infineon Technologies
Description: MOSFET 4N-CH 1200V 50A AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A
Input Capacitance (Ciss) (Max) @ Vds: 3.68nF @ 800V
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 50A, 15V
Gate Charge (Qg) (Max) @ Vgs: 124nC @ 15V
Vgs(th) (Max) @ Id: 5.5V @ 20mA
Supplier Device Package: AG-EASY1B-2
Part Status: Obsolete
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+231.67 EUR
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F423MR12W1M1B11BOMA1 Infineon-F4-23MR12W1M1_B11-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690e9d9fb63802
F423MR12W1M1B11BOMA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1BM-2
IGBT Type: Trench
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Input Capacitance (Cies) @ Vce: 3.68 nF @ 800 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+250.61 EUR
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62-0258PBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 9.2A 8-SO
Produkt ist nicht verfügbar
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ESD207B102ELSE6327XTSA1 ESD207-B1-02.pdf
ESD207B102ELSE6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 8.1VC PGTSSLP23
Packaging: Bulk
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 14pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSSLP-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.65V
Voltage - Clamping (Max) @ Ipp: 8.1V
Power Line Protection: No
Part Status: Obsolete
auf Bestellung 2200769 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5453+0.093 EUR
Mindestbestellmenge: 5453
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FS25R12KT3BOSA1 Infineon-FS25R12KT3-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b431414d53ef
FS25R12KT3BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 40A 145W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 145 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 1.8 nF @ 25 V
Produkt ist nicht verfügbar
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IPG20N04S409ATMA1 INFNS15593-1.pdf?t.download=true&u=5oefqw
IPG20N04S409ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CHANNEL_30/40V
Produkt ist nicht verfügbar
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BCR601XUMA1 Infineon-BCR601-DS-v01_01-EN.pdf?fileId=5546d46268554f4a016855b5d62d0023
BCR601XUMA1
Hersteller: Infineon Technologies
Description: IC LED DRVR LIN ANALOG 10MA 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: LED Lighting
Current - Output / Channel: 10mA
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: PG-DSO-8
Dimming: Analog
Voltage - Supply (Max): 60V
Part Status: Active
Produkt ist nicht verfügbar
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BCR601XUMA1 Infineon-BCR601-DS-v01_01-EN.pdf?fileId=5546d46268554f4a016855b5d62d0023
BCR601XUMA1
Hersteller: Infineon Technologies
Description: IC LED DRVR LIN ANALOG 10MA 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: LED Lighting
Current - Output / Channel: 10mA
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: PG-DSO-8
Dimming: Analog
Voltage - Supply (Max): 60V
Part Status: Active
auf Bestellung 2098 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.27 EUR
20+0.89 EUR
25+0.8 EUR
100+0.7 EUR
250+0.66 EUR
500+0.63 EUR
1000+0.6 EUR
Mindestbestellmenge: 14
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IPU80R1K4CEBKMA1 Infineon-IPX80R1K4CE-DS-v02_01-en.pdf?fileId=db3a304340155f3d01402f3b471926eb
IPU80R1K4CEBKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 3.9A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Supplier Device Package: PG-TO251-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
auf Bestellung 18925 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
567+0.81 EUR
Mindestbestellmenge: 567
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BGSF1717MN26E6327XTSA1 BGSF1717MN26.pdf
BGSF1717MN26E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SP7T 2.7GHZ TSNP26
Packaging: Bulk
Package / Case: 26-WFQFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP7T
RF Type: General Purpose
Voltage - Supply: 1.2V ~ 1.8V
Frequency Range: 100MHz ~ 2.7GHz
Supplier Device Package: PG-TSNP-26-3
auf Bestellung 3984 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
262+1.69 EUR
Mindestbestellmenge: 262
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TLS810A1LDV33XUMA1 Infineon-TLS810A1LD+V33-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc1015921017a7b3679
TLS810A1LDV33XUMA1
Hersteller: Infineon Technologies
Description: IC REG LIN 3.3V 100MA TSON-102
Packaging: Cut Tape (CT)
Package / Case: 10-TFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TSON-10-2
Voltage - Output (Min/Fixed): 3.3V
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.65V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 15 µA
Qualification: AEC-Q100
auf Bestellung 4823 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.09 EUR
12+1.53 EUR
25+1.38 EUR
100+1.23 EUR
250+1.15 EUR
500+1.11 EUR
1000+1.07 EUR
2500+1.03 EUR
Mindestbestellmenge: 9
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IPA60R600E6XKSA1 IPA60R600E6_2_0.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a304327b8975001281b23402b1aa0
IPA60R600E6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 7.3A TO220-FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
auf Bestellung 1105 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
438+1.12 EUR
Mindestbestellmenge: 438
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IPA60R520CP INFNS17418-1.pdf?t.download=true&u=5oefqw
IPA60R520CP
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 100 V
auf Bestellung 55486 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
270+1.78 EUR
Mindestbestellmenge: 270
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IPA60R280E6 INFN-S-A0004583476-1.pdf?t.download=true&u=5oefqw
IPA60R280E6
Hersteller: Infineon Technologies
Description: 600V 0.28OHM N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 430µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Produkt ist nicht verfügbar
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IPA60R299CP INFN-S-A0004583224-1.pdf?t.download=true&u=5oefqw
IPA60R299CP
Hersteller: Infineon Technologies
Description: 600V COOLMOS POWER TRANSISTOR
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Produkt ist nicht verfügbar
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IPA60R190E6 INFN-S-A0003614948-1.pdf?t.download=true&u=5oefqw
IPA60R190E6
Hersteller: Infineon Technologies
Description: 600V 0.19OHM N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 630µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
Produkt ist nicht verfügbar
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IPA60R165CP INFNS16943-1.pdf?t.download=true&u=5oefqw
IPA60R165CP
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 21A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 790µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
Produkt ist nicht verfügbar
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IPA60R600E6 INFN-S-A0004583464-1.pdf?t.download=true&u=5oefqw
IPA60R600E6
Hersteller: Infineon Technologies
Description: 600V, 0.6OHM, N-CHANNEL, MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
auf Bestellung 640 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
379+1.27 EUR
Mindestbestellmenge: 379
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IPA60R520C6 INFN-S-A0001300323-1.pdf?t.download=true&u=5oefqw
IPA60R520C6
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 230µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V
Produkt ist nicht verfügbar
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IPA60R520C6XKSA1 IPA60R520C6.pdf
IPA60R520C6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 8.1A TO220-FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 230µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V
auf Bestellung 111009 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
424+1.15 EUR
Mindestbestellmenge: 424
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BAT1504RE6152HTSA1 Infineon-BAT15-04R-DS-v02_00-EN.pdf?fileId=5546d46265f064ff0166389615154e83
BAT1504RE6152HTSA1
Hersteller: Infineon Technologies
Description: RF DIODE SCHOTTKY 4V PG-SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.25pF @ 0V, 1MHz
Resistance @ If, F: 18Ohm @ 5mA, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 110 mA
auf Bestellung 7509 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.97 EUR
29+0.62 EUR
100+0.46 EUR
500+0.35 EUR
1000+0.32 EUR
Mindestbestellmenge: 19
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IRGP30B120KD-EP-INF
Hersteller: Infineon Technologies
Description: MOTOR CONTROL CO-PACK IGBT W/ULT
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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BAR161E6327HTSA1 Bar14_15_16.pdf
BAR161E6327HTSA1
Hersteller: Infineon Technologies
Description: RF DIODE PIN 100V 250MW PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Common Anode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.5pF @ 50V, 1MHz
Resistance @ If, F: 12Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 100V
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Current - Max: 140 mA
Power Dissipation (Max): 250 mW
auf Bestellung 66000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1420+0.32 EUR
Mindestbestellmenge: 1420
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BSC028N06NSSCATMA1 Infineon-BSC028N06NSSC-DataSheet-v02_01-EN.pdf?fileId=5546d462727878c201727efd2c445c09
BSC028N06NSSCATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 137A WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 137A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-WSON-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3375 pF @ 30 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+1.55 EUR
Mindestbestellmenge: 4000
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BSC028N06NSSCATMA1 Infineon-BSC028N06NSSC-DataSheet-v02_01-EN.pdf?fileId=5546d462727878c201727efd2c445c09
BSC028N06NSSCATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 137A WSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 137A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-WSON-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3375 pF @ 30 V
auf Bestellung 15660 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.91 EUR
10+3.2 EUR
100+2.22 EUR
500+1.9 EUR
Mindestbestellmenge: 4
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XMC1404Q048X0200AAXUMA1 Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1404Q048X0200AAXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 200KB FLASH 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-73
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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XMC1404Q048X0200AAXUMA1 Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1404Q048X0200AAXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 200KB FLASH 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-73
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SIDC42D120E6X1SA4 SIDC42D120E6_L4192P.pdf?folderId=db3a304412b407950112b435e2a46402&fileId=db3a304412b407950112b435e3206403
Hersteller: Infineon Technologies
Description: DIODE GP 1.2KV 50A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Produkt ist nicht verfügbar
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SIDC42D120F6X1SA3 SIDC42D120F6_L4195M.pdf?folderId=db3a304412b407950112b435635962d8&fileId=db3a304412b407950112b43563d462d9
Hersteller: Infineon Technologies
Description: DIODE GP 1.2KV 50A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Produkt ist nicht verfügbar
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111-4181PBF
Hersteller: Infineon Technologies
Description: IC GATE DRIVER SMD
Produkt ist nicht verfügbar
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TLE9183QKXUMA1 Infineon-TLE9183QK-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8900bb570189018597be106e
TLE9183QKXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: PG-LQFP-64-28
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 3
Gate Type: MOSFET (N-Channel)
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BCR 521 E6327 INFNS16393-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Produkt ist nicht verfügbar
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BCW60DE6327 INFNS11039-1.pdf?t.download=true&u=5oefqw
BCW60DE6327
Hersteller: Infineon Technologies
Description: TRANS NPN 32V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
auf Bestellung 13852 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7397+0.065 EUR
Mindestbestellmenge: 7397
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BCW 60FF E6327 INFNS11039-1.pdf?t.download=true&u=5oefqw
BCW 60FF E6327
Hersteller: Infineon Technologies
Description: TRANS NPN 32V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6340+0.088 EUR
Mindestbestellmenge: 6340
Im Einkaufswagen  Stück im Wert von  UAH
BCW 60D E6327 INFNS11039-1.pdf?t.download=true&u=5oefqw
BCW 60D E6327
Hersteller: Infineon Technologies
Description: TRANS NPN 32V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8013+0.07 EUR
Mindestbestellmenge: 8013
Im Einkaufswagen  Stück im Wert von  UAH
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