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SLE 66CX80PE MFC5.8 Infineon Technologies SLE%2066CX80PE.pdf Description: IC SECURITY CTRLR 8/16BIT MFC5.8
Packaging: Bulk
Package / Case: MFC5.8 Chip Card Module
Applications: Security
Supplier Device Package: S-MFC5.8-9
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SLE 66CX80PE DSO8 SLE 66CX80PE DSO8 Infineon Technologies SLE%2066CX80PE.pdf Description: IC SECURITY CTRLR 8/16BIT DS08
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Applications: Security
Supplier Device Package: PG-DSO-8
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPI50N12S3L15AKSA1 IPI50N12S3L15AKSA1 Infineon Technologies IPx50N12S3L-15.pdf Description: MOSFET N-CHANNEL_100+
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15.7mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 60µA
Supplier Device Package: PG-TO262-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V
Qualification: AEC-Q101
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IPP50N12S3L15AKSA1 IPP50N12S3L15AKSA1 Infineon Technologies IPx50N12S3L-15.pdf Description: MOSFET N-CHANNEL_100+
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15.7mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 60µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V
Qualification: AEC-Q101
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ADM6996LC-AC-T-1 ADM6996LC-AC-T-1 Infineon Technologies INFNS08332-1.pdf?t.download=true&u=5oefqw Description: LAN CONTROLLER
Packaging: Bulk
Package / Case: 128-BFQFP
Function: Switch
Interface: RMII
Protocol: Ethernet
Standards: 10/100 Base-T/TX PHY
Supplier Device Package: PG-BFQFP-128
Part Status: Active
DigiKey Programmable: Not Verified
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ADM6996L-AA-T-1 ADM6996L-AA-T-1 Infineon Technologies INFNS08332-1.pdf?t.download=true&u=5oefqw Description: LAN CONTROLLER, 7 CHANNEL(S), 12
Packaging: Tray
Part Status: Active
DigiKey Programmable: Not Verified
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FF600R12KF4NOSA1 Infineon Technologies INFNS14530-1.pdf?t.download=true&u=5oefqw Description: IGBT MODULE 1200V 600A 3900W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 600A
NTC Thermistor: No
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3900 W
Current - Collector Cutoff (Max): 8 mA
Input Capacitance (Cies) @ Vce: 45 nF @ 25 V
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FF600R12KE4PBOSA1 FF600R12KE4PBOSA1 Infineon Technologies Infineon-FF600R12KE4P-DataSheet-v02_01-EN.pdf?fileId=5546d462700c0ae601701f0f154740cf Description: IGBT MOD 1200V 600A AG-62MM-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: AG-62MM-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 38 nF @ 25 V
Produkt ist nicht verfügbar
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FF600R12ME4B73BPSA1 FF600R12ME4B73BPSA1 Infineon Technologies Infineon-FF600R12ME4_B73-DS-v03_00-EN.pdf?fileId=5546d4625e763904015e94b7a3232e2d Description: IGBT MOD 1200V 1200A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
Produkt ist nicht verfügbar
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FF600R12ME4PB72BPSA1 FF600R12ME4PB72BPSA1 Infineon Technologies Infineon-FF600R12ME4P_B72-DataSheet-v03_01-EN.pdf?fileId=5546d4626bfb5124016c19b374fc2851 Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-5
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
Produkt ist nicht verfügbar
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FF900R12IE4VBOSA1 FF900R12IE4VBOSA1 Infineon Technologies Infineon-FF900R12IE4V-DS-v02_00-en_de.pdf?fileId=5546d46145f1f3a40145f59dd8930994 Description: IGBT MOD 1200V 900A 5100W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 5100 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
Produkt ist nicht verfügbar
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S6E1C32B0AGP20000 S6E1C32B0AGP20000 Infineon Technologies Infineon-S6E1C32D0AGN20050-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c81ae03fc0181ec33e75c2c49 Description: IC MCU 32BIT 128KB FLASH 32LQFP
DigiKey Programmable: Not Verified
Number of I/O: 24
Supplier Device Package: 32-LQFP (7x7)
Peripherals: LVD, POR, PWM, WDT
Connectivity: CSIO, I2C, LINbus, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Core Size: 32-Bit Single-Core
Data Converters: A/D 6x12b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 32-LQFP
Packaging: Tray
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BGA825L6SE6327XTSA1 BGA825L6SE6327XTSA1 Infineon Technologies BGA825L6S.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433cd75ebf013cf2684b7427e6 Description: IC AMP GPS 1.55-1.615GHZ TSLP6-3
Packaging: Bulk
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 17dB
Current - Supply: 4.8mA
Noise Figure: 0.6dB
P1dB: -10dBm
Test Frequency: 1.575GHz
Supplier Device Package: TSLP-6-3
Part Status: Obsolete
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EVALDRIVE3PHPFD7TOBO1 EVALDRIVE3PHPFD7TOBO1 Infineon Technologies Infineon-Evaluationboard_EVAL_DRIVE_3PH_PFD7-ApplicationNotes-v01_00-EN.pdf?fileId=5546d4626f229553016fa800964b53f6 Description: EVAL BOARD FOR IMC101T
Utilized IC / Part: IMC101T
Contents: Board(s)
Type: Power Management
Function: Motor Controller/Driver
Packaging: Box
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PEB3264HV1.4 PEB3264HV1.4 Infineon Technologies INTL-S-A0006019977-1.pdf?t.download=true&u=5oefqw Description: SLIC FILTER
Number of Circuits: 2
Part Status: Active
Supplier Device Package: P-MQFP-64-1
Current - Supply: 105mA
Voltage - Supply: 3.3V
Operating Temperature: 0°C ~ 70°C
Interface: IOM-2, PCM
Function: Dual Channel Subscriber Line Interface Circuit (DuSLIC)
Mounting Type: Surface Mount
Package / Case: 64-QFP
Packaging: Bulk
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PEB3264HV1.4P PEB3264HV1.4P Infineon Technologies INTL-S-A0006019977-1.pdf?t.download=true&u=5oefqw Description: SLIC FILTER
Number of Circuits: 2
Part Status: Active
Supplier Device Package: P-MQFP-64-1
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: -40°C ~ 85°C
Interface: IOM-2, PCM
Function: Dual Channel Subscriber Line Interface Circuit (DuSLIC)
Mounting Type: Surface Mount
Package / Case: 64-QFP
Packaging: Bulk
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PEB3264FV1.4 PEB3264FV1.4 Infineon Technologies INTL-S-A0006019977-1.pdf?t.download=true&u=5oefqw Description: SLIC FILTER
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Dual Channel Subscriber Line Interface Circuit (DuSLIC)
Interface: IOM-2, PCM
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.3V
Current - Supply: 105mA
Supplier Device Package: PG-TQFP-64-1
Part Status: Active
Number of Circuits: 2
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PEB 3264 F V1.4 PEB 3264 F V1.4 Infineon Technologies PEBx264%2C%20PEBx265%2C%20PEB436x%2C%20PEB4266.pdf Description: IC TELECOM INTERFACE TQFP-64
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Dual Channel Subscriber Line Interface Circuit (DuSLIC)
Interface: IOM-2, PCM
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.3V
Current - Supply: 105mA
Supplier Device Package: PG-TQFP-64-1
Part Status: Obsolete
Number of Circuits: 2
Produkt ist nicht verfügbar
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S6E2HE6G0AGV2B000 S6E2HE6G0AGV2B000 Infineon Technologies Infineon-S6E2H_Series_32-bit_Arm_Cortex-M4F_FM4_Microcontroller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed234f14ede Description: IC MCU 32BIT 544KB FLASH 120LQFP
Number of I/O: 100
Part Status: Active
Supplier Device Package: 120-LQFP (16x16)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 64K x 8
Program Memory Size: 544KB (544K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 120-LQFP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ISC037N03L5ISATMA1 ISC037N03L5ISATMA1 Infineon Technologies Infineon-ISC037N03L5IS-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8b91008098b Description: MOSFET N-CH 30V 20A/78A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
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5000+0.51 EUR
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ISC037N03L5ISATMA1 ISC037N03L5ISATMA1 Infineon Technologies Infineon-ISC037N03L5IS-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8b91008098b Description: MOSFET N-CH 30V 20A/78A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 37W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 78A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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17+1.25 EUR
100+0.95 EUR
500+0.75 EUR
1000+0.61 EUR
2000+0.55 EUR
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IPG20N04S412ATMA1 IPG20N04S412ATMA1 Infineon Technologies Infineon-IPG20N04S4_12-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf60c03c6c05 Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 41W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 15µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TLS4120D0EPVXUMA1 TLS4120D0EPVXUMA1 Infineon Technologies Infineon-TLS4120D0EPV-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e01710b576dc53b30 Description: OPTIREG SWITCHER
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TLS4120D0EPVXUMA1 TLS4120D0EPVXUMA1 Infineon Technologies Infineon-TLS4120D0EPV-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e01710b576dc53b30 Description: OPTIREG SWITCHER
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BFR181E6327 BFR181E6327 Infineon Technologies INFNS10732-1.pdf?t.download=true&u=5oefqw Description: LOW-NOISE TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 18.5dB
Power - Max: 175mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT23
Part Status: Active
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BFR181WE6327 BFR181WE6327 Infineon Technologies INFNS14909-1.pdf?t.download=true&u=5oefqw Description: LOW-NOISE TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 19dB
Power - Max: 175mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Supplier Device Package: SOT-323
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TLS850B0TEV33ATMA1 TLS850B0TEV33ATMA1 Infineon Technologies Infineon-TLS850B0TE V33-DS-v01_00-EN.pdf?fileId=5546d4625fe3678401600d3a414c6da3 Description: IC REG LIN 3.3V 500MA PG-TO252-5
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 25 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-5
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 63dB (100Hz)
Voltage Dropout (Max): 0.6V @ 250mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 33 µA
Qualification: AEC-Q100
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11+2 EUR
25+1.81 EUR
100+1.61 EUR
250+1.51 EUR
500+1.45 EUR
1000+1.43 EUR
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SPP80N03S2L05 SPP80N03S2L05 Infineon Technologies Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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IRLR2908TRLPBF-INF IRLR2908TRLPBF-INF Infineon Technologies Description: IRLR2908 - HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 23A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D-Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
Produkt ist nicht verfügbar
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BCR198E6327 BCR198E6327 Infineon Technologies INFNS16386-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
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BCR198TE6327 BCR198TE6327 Infineon Technologies INFNS09785-1.pdf?t.download=true&u=5oefqw Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 190 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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BCR198WH6327 BCR198WH6327 Infineon Technologies Infineon-BCR198SERIES-DS-v01_01-en[1].pdf?fileId=db3a304320d39d590121e8552c2f65bb Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 190 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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AUIR3316S-INF AUIR3316S-INF Infineon Technologies IRSDS11219-1.pdf?t.download=true&u=5oefqw Description: LATCH BASED PERIPHERAL DRIVER, 1
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 5.5mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 26V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 23A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Adjustable), Over Temperature, Reverse Battery
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BGSA133GN10E6327XTSA1 BGSA133GN10E6327XTSA1 Infineon Technologies Description: IC RF ANT DEVICE 10TSNP
Packaging: Bulk
Package / Case: 10-XFQFN
Mounting Type: Surface Mount
Function: Switch
Supplier Device Package: PG-TSNP-10-1
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BGSA11GN10E6327XTSA1 BGSA11GN10E6327XTSA1 Infineon Technologies Infineon-BGSA11GN10-DataSheet-v03_02-EN.pdf?fileId=5546d46255dd933d0155e9dac4e809ed Description: IC RF SWITCH SPST 5GHZ TSNP10-1
Packaging: Cut Tape (CT)
Package / Case: 10-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPST
RF Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Insertion Loss: 0.35dB
Frequency Range: 100MHz ~ 5GHz
Test Frequency: 2.69GHz
Isolation: 14dB
Supplier Device Package: PG-TSNP-10-1
IIP3: 75dBm
Part Status: Active
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CY7C1041GN-10ZSXI CY7C1041GN-10ZSXI Infineon Technologies Infineon-CY7C1041GN_4-Mbit_(256K_words_16_bit)_Static_RAM-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed82ae859a5&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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BGSA14GN10E6327XTSA1 BGSA14GN10E6327XTSA1 Infineon Technologies Infineon-BGSA14GN10-DataSheet-v03_01-EN.pdf?fileId=5546d46255dd933d0155e9e3e86f09ff Description: IC RF SWITCH SP4T 5GHZ TSNP10-1
Features: Single Line Control
Packaging: Tape & Reel (TR)
Package / Case: 10-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP4T
RF Type: Cellular, 3G, 4G
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Insertion Loss: 0.46dB
Frequency Range: 100MHz ~ 5GHz
Test Frequency: 2.69GHz
Isolation: 20dB
Supplier Device Package: PG-TSNP-10-1
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BGSA14GN10E6327XTSA1 BGSA14GN10E6327XTSA1 Infineon Technologies Infineon-BGSA14GN10-DataSheet-v03_01-EN.pdf?fileId=5546d46255dd933d0155e9e3e86f09ff Description: IC RF SWITCH SP4T 5GHZ TSNP10-1
Features: Single Line Control
Packaging: Cut Tape (CT)
Package / Case: 10-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP4T
RF Type: Cellular, 3G, 4G
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Insertion Loss: 0.46dB
Frequency Range: 100MHz ~ 5GHz
Test Frequency: 2.69GHz
Isolation: 20dB
Supplier Device Package: PG-TSNP-10-1
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BGSA133GN10E6327XTSA1 BGSA133GN10E6327XTSA1 Infineon Technologies Description: IC RF ANT DEVICE 10TSNP
Packaging: Tape & Reel (TR)
Package / Case: 10-XFQFN
Mounting Type: Surface Mount
Function: Switch
Supplier Device Package: PG-TSNP-10-1
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CY7C1041GN-10VXI CY7C1041GN-10VXI Infineon Technologies Infineon-CY7C1041GN_4-Mbit_(256K_words_16_bit)_Static_RAM-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed82ae859a5&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 4MBIT PARALLEL 44SOJ
DigiKey Programmable: Not Verified
Memory Organization: 256K x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 44-SOJ
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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BSD235N L6327 BSD235N L6327 Infineon Technologies BSD235N_Rev2.1.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30431add1d95011afc70075c04e0 Description: MOSFET 2N-CH 20V 0.95A SOT363
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BSD235N L6327 BSD235N L6327 Infineon Technologies BSD235N_Rev2.1.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30431add1d95011afc70075c04e0 Description: MOSFET 2N-CH 20V 0.95A SOT363
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BSC025N03LSGATMA1 BSC025N03LSGATMA1 Infineon Technologies BSC025N03LS_rev1.6.pdf?fileId=db3a304412b407950112b4274ff53bff Description: MOSFET N-CH 30V 25A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 15 V
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BSC025N03LSGATMA1 BSC025N03LSGATMA1 Infineon Technologies BSC025N03LS_rev1.6.pdf?fileId=db3a304412b407950112b4274ff53bff Description: MOSFET N-CH 30V 25A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 15 V
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BCM89071A1CUBXGT BCM89071A1CUBXGT Infineon Technologies Infineon-CYW89071_Single_Chip_Automotive_Grade_Bluetooth_Transceiver_and_Baseband_Processor-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1ff4c6835&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_a Description: IC RF TXRX+MCU BLUETOOTH 42UFBGA
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SPP07N600S5 SPP07N600S5 Infineon Technologies Infineon-SPP_I07N60S5-DS-v02_07-en.pdf?fileId=db3a304412b407950112b42c81144713 Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
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IPB60R299CPAATMA1 IPB60R299CPAATMA1 Infineon Technologies INFN-S-A0003614947-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 11A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Qualification: AEC-Q101
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IPB100N04S2L-03ATMA2 IPB100N04S2L-03ATMA2 Infineon Technologies INFNS08598-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
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IPB100N04S2L03ATMA2 IPB100N04S2L03ATMA2 Infineon Technologies Infineon-IPP_B100N04S2L-DS-v01_00-en.pdf?fileId=db3a304412b407950112b42b9443455d&ack=t Description: MOSFET N-CH 40V 100A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Qualification: AEC-Q101
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IKCM20L60GBXKMA1 IKCM20L60GBXKMA1 Infineon Technologies INFN-S-A0003820769-1.pdf?t.download=true&u=5oefqw Description: INTELLIGENT POWER MODULE (IPM)
Packaging: Bulk
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Part Status: Active
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IKCM15H60HAXXMA1 IKCM15H60HAXXMA1 Infineon Technologies Description: INTELLIGENT POWER MODULE (IPM)
Packaging: Bulk
Package / Case: 24-PowerDIP Module
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 15A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 18.5V
Applications: Fan Motor Driver
Technology: IGBT
Supplier Device Package: 24-DIP
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: AC, Synchronous
Part Status: Active
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IKCM10H60HAXKMA1 IKCM10H60HAXKMA1 Infineon Technologies IKCM10H60HA.pdf Description: IFPS MODULES 24MDIP
Packaging: Bulk
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 600 V
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IKCM20L60HAXKMA1 IKCM20L60HAXKMA1 Infineon Technologies IKCM20L60HA.pdf Description: IGBT IPM 600V 20A 24-PWRDIP MOD
Packaging: Bulk
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 20 A
Voltage: 600 V
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IKCM20L60HDXKMA1 IKCM20L60HDXKMA1 Infineon Technologies IKCM20L60HD.pdf Description: IGBT IPM 600V 20A 24-PWRDIP MOD
Packaging: Bulk
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 20 A
Voltage: 600 V
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IRFS4510TRLPBF IRFS4510TRLPBF Infineon Technologies IRSDS13318-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 100V 61A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 37A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3180 pF @ 50 V
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BTT62001EJA BTT62001EJA Infineon Technologies INFN-S-A0000037746-1.pdf?t.download=true&u=5oefqw Description: SMART HIGH-SIDE POWER SWITCH
Features: Slew Rate Controlled
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 200mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-44
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
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BTT62004ESAXUMA1 BTT62004ESAXUMA1 Infineon Technologies Infineon-BTT6200-4ESA-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a22035b660d8d Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-24
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 200mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-24-21
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 8891 Stücke:
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3+7.63 EUR
10+5.77 EUR
25+5.31 EUR
100+4.8 EUR
250+4.55 EUR
500+4.53 EUR
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BTT62001ENAXUMA1 BTT62001ENAXUMA1 Infineon Technologies Infineon-BTT6200-1ENA-DS-v01_00-EN.pdf?fileId=5546d462636cc8fb01645f3a31f312e9 Description: IC PWR SWITCH N-CHAN 1:1 TDSO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 200mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-8-31
Fault Protection: Over Temperature, Over Voltage, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 7735 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.22 EUR
10+2.37 EUR
25+2.15 EUR
100+1.92 EUR
250+1.81 EUR
500+1.74 EUR
1000+1.73 EUR
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ESD239B1W0201E6327XTSA1 ESD239B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD239-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d4625cc9456a015ce93613b14885 Description: TVS DIODE 22VWM 26.5VC WLL-2-3
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Capacitance @ Frequency: 3.2pF @ 1GHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 26.5V
Power - Peak Pulse: 80W
Power Line Protection: No
Produkt ist nicht verfügbar
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ESD239B1W0201E6327XTSA1 ESD239B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD239-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d4625cc9456a015ce93613b14885 Description: TVS DIODE 22VWM 26.5VC WLL-2-3
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Capacitance @ Frequency: 3.2pF @ 1GHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 26.5V
Power - Peak Pulse: 80W
Power Line Protection: No
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48+0.44 EUR
77+0.27 EUR
108+0.19 EUR
125+0.17 EUR
500+0.12 EUR
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SLE 66CX80PE MFC5.8 SLE%2066CX80PE.pdf
Hersteller: Infineon Technologies
Description: IC SECURITY CTRLR 8/16BIT MFC5.8
Packaging: Bulk
Package / Case: MFC5.8 Chip Card Module
Applications: Security
Supplier Device Package: S-MFC5.8-9
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SLE 66CX80PE DSO8 SLE%2066CX80PE.pdf
SLE 66CX80PE DSO8
Hersteller: Infineon Technologies
Description: IC SECURITY CTRLR 8/16BIT DS08
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Applications: Security
Supplier Device Package: PG-DSO-8
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPI50N12S3L15AKSA1 IPx50N12S3L-15.pdf
IPI50N12S3L15AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CHANNEL_100+
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15.7mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 60µA
Supplier Device Package: PG-TO262-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V
Qualification: AEC-Q101
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245+2.24 EUR
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IPP50N12S3L15AKSA1 IPx50N12S3L-15.pdf
IPP50N12S3L15AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CHANNEL_100+
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15.7mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 60µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V
Qualification: AEC-Q101
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360+1.69 EUR
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ADM6996LC-AC-T-1 INFNS08332-1.pdf?t.download=true&u=5oefqw
ADM6996LC-AC-T-1
Hersteller: Infineon Technologies
Description: LAN CONTROLLER
Packaging: Bulk
Package / Case: 128-BFQFP
Function: Switch
Interface: RMII
Protocol: Ethernet
Standards: 10/100 Base-T/TX PHY
Supplier Device Package: PG-BFQFP-128
Part Status: Active
DigiKey Programmable: Not Verified
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71+7.62 EUR
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ADM6996L-AA-T-1 INFNS08332-1.pdf?t.download=true&u=5oefqw
ADM6996L-AA-T-1
Hersteller: Infineon Technologies
Description: LAN CONTROLLER, 7 CHANNEL(S), 12
Packaging: Tray
Part Status: Active
DigiKey Programmable: Not Verified
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FF600R12KF4NOSA1 INFNS14530-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 600A 3900W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 600A
NTC Thermistor: No
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3900 W
Current - Collector Cutoff (Max): 8 mA
Input Capacitance (Cies) @ Vce: 45 nF @ 25 V
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1+1337.46 EUR
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FF600R12KE4PBOSA1 Infineon-FF600R12KE4P-DataSheet-v02_01-EN.pdf?fileId=5546d462700c0ae601701f0f154740cf
FF600R12KE4PBOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 600A AG-62MM-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: AG-62MM-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 38 nF @ 25 V
Produkt ist nicht verfügbar
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FF600R12ME4B73BPSA1 Infineon-FF600R12ME4_B73-DS-v03_00-EN.pdf?fileId=5546d4625e763904015e94b7a3232e2d
FF600R12ME4B73BPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 1200A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
Produkt ist nicht verfügbar
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FF600R12ME4PB72BPSA1 Infineon-FF600R12ME4P_B72-DataSheet-v03_01-EN.pdf?fileId=5546d4626bfb5124016c19b374fc2851
FF600R12ME4PB72BPSA1
Hersteller: Infineon Technologies
Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-5
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
Produkt ist nicht verfügbar
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FF900R12IE4VBOSA1 Infineon-FF900R12IE4V-DS-v02_00-en_de.pdf?fileId=5546d46145f1f3a40145f59dd8930994
FF900R12IE4VBOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 900A 5100W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 5100 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
Produkt ist nicht verfügbar
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S6E1C32B0AGP20000 Infineon-S6E1C32D0AGN20050-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c81ae03fc0181ec33e75c2c49
S6E1C32B0AGP20000
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 32LQFP
DigiKey Programmable: Not Verified
Number of I/O: 24
Supplier Device Package: 32-LQFP (7x7)
Peripherals: LVD, POR, PWM, WDT
Connectivity: CSIO, I2C, LINbus, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Core Size: 32-Bit Single-Core
Data Converters: A/D 6x12b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 32-LQFP
Packaging: Tray
auf Bestellung 271 Stücke:
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AnzahlPrivatkunde
13+1.71 EUR
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BGA825L6SE6327XTSA1 BGA825L6S.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433cd75ebf013cf2684b7427e6
BGA825L6SE6327XTSA1
Hersteller: Infineon Technologies
Description: IC AMP GPS 1.55-1.615GHZ TSLP6-3
Packaging: Bulk
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 17dB
Current - Supply: 4.8mA
Noise Figure: 0.6dB
P1dB: -10dBm
Test Frequency: 1.575GHz
Supplier Device Package: TSLP-6-3
Part Status: Obsolete
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AnzahlPrivatkunde
1288+0.42 EUR
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EVALDRIVE3PHPFD7TOBO1 Infineon-Evaluationboard_EVAL_DRIVE_3PH_PFD7-ApplicationNotes-v01_00-EN.pdf?fileId=5546d4626f229553016fa800964b53f6
EVALDRIVE3PHPFD7TOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IMC101T
Utilized IC / Part: IMC101T
Contents: Board(s)
Type: Power Management
Function: Motor Controller/Driver
Packaging: Box
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1+338.5 EUR
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PEB3264HV1.4 INTL-S-A0006019977-1.pdf?t.download=true&u=5oefqw
PEB3264HV1.4
Hersteller: Infineon Technologies
Description: SLIC FILTER
Number of Circuits: 2
Part Status: Active
Supplier Device Package: P-MQFP-64-1
Current - Supply: 105mA
Voltage - Supply: 3.3V
Operating Temperature: 0°C ~ 70°C
Interface: IOM-2, PCM
Function: Dual Channel Subscriber Line Interface Circuit (DuSLIC)
Mounting Type: Surface Mount
Package / Case: 64-QFP
Packaging: Bulk
auf Bestellung 10974 Stücke:
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AnzahlPrivatkunde
65+9.02 EUR
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PEB3264HV1.4P INTL-S-A0006019977-1.pdf?t.download=true&u=5oefqw
PEB3264HV1.4P
Hersteller: Infineon Technologies
Description: SLIC FILTER
Number of Circuits: 2
Part Status: Active
Supplier Device Package: P-MQFP-64-1
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: -40°C ~ 85°C
Interface: IOM-2, PCM
Function: Dual Channel Subscriber Line Interface Circuit (DuSLIC)
Mounting Type: Surface Mount
Package / Case: 64-QFP
Packaging: Bulk
auf Bestellung 420 Stücke:
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AnzahlPrivatkunde
49+12.11 EUR
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PEB3264FV1.4 INTL-S-A0006019977-1.pdf?t.download=true&u=5oefqw
PEB3264FV1.4
Hersteller: Infineon Technologies
Description: SLIC FILTER
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Dual Channel Subscriber Line Interface Circuit (DuSLIC)
Interface: IOM-2, PCM
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.3V
Current - Supply: 105mA
Supplier Device Package: PG-TQFP-64-1
Part Status: Active
Number of Circuits: 2
auf Bestellung 104 Stücke:
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AnzahlPrivatkunde
67+8.65 EUR
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PEB 3264 F V1.4 PEBx264%2C%20PEBx265%2C%20PEB436x%2C%20PEB4266.pdf
PEB 3264 F V1.4
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE TQFP-64
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Dual Channel Subscriber Line Interface Circuit (DuSLIC)
Interface: IOM-2, PCM
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.3V
Current - Supply: 105mA
Supplier Device Package: PG-TQFP-64-1
Part Status: Obsolete
Number of Circuits: 2
Produkt ist nicht verfügbar
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S6E2HE6G0AGV2B000 Infineon-S6E2H_Series_32-bit_Arm_Cortex-M4F_FM4_Microcontroller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed234f14ede
S6E2HE6G0AGV2B000
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 544KB FLASH 120LQFP
Number of I/O: 100
Part Status: Active
Supplier Device Package: 120-LQFP (16x16)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 64K x 8
Program Memory Size: 544KB (544K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 120-LQFP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ISC037N03L5ISATMA1 Infineon-ISC037N03L5IS-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8b91008098b
ISC037N03L5ISATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 20A/78A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
auf Bestellung 15000 Stücke:
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AnzahlPrivatkunde
5000+0.51 EUR
10000+0.49 EUR
Mindestbestellmenge: 5000 Stücke
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ISC037N03L5ISATMA1 Infineon-ISC037N03L5IS-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8b91008098b
ISC037N03L5ISATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 20A/78A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 37W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 78A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 18934 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
15+1.43 EUR
17+1.25 EUR
100+0.95 EUR
500+0.75 EUR
1000+0.61 EUR
2000+0.55 EUR
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IPG20N04S412ATMA1 Infineon-IPG20N04S4_12-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf60c03c6c05
IPG20N04S412ATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 41W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 15µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TLS4120D0EPVXUMA1 Infineon-TLS4120D0EPV-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e01710b576dc53b30
TLS4120D0EPVXUMA1
Hersteller: Infineon Technologies
Description: OPTIREG SWITCHER
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 3000 Stücke
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TLS4120D0EPVXUMA1 Infineon-TLS4120D0EPV-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e01710b576dc53b30
TLS4120D0EPVXUMA1
Hersteller: Infineon Technologies
Description: OPTIREG SWITCHER
auf Bestellung 5200 Stücke:
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BFR181E6327 INFNS10732-1.pdf?t.download=true&u=5oefqw
BFR181E6327
Hersteller: Infineon Technologies
Description: LOW-NOISE TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 18.5dB
Power - Max: 175mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT23
Part Status: Active
auf Bestellung 54000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3909+0.17 EUR
Mindestbestellmenge: 3909 Stücke
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BFR181WE6327 INFNS14909-1.pdf?t.download=true&u=5oefqw
BFR181WE6327
Hersteller: Infineon Technologies
Description: LOW-NOISE TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 19dB
Power - Max: 175mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Supplier Device Package: SOT-323
Produkt ist nicht verfügbar
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TLS850B0TEV33ATMA1 Infineon-TLS850B0TE V33-DS-v01_00-EN.pdf?fileId=5546d4625fe3678401600d3a414c6da3
TLS850B0TEV33ATMA1
Hersteller: Infineon Technologies
Description: IC REG LIN 3.3V 500MA PG-TO252-5
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 25 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-5
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 63dB (100Hz)
Voltage Dropout (Max): 0.6V @ 250mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 33 µA
Qualification: AEC-Q100
auf Bestellung 2703 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.75 EUR
11+2 EUR
25+1.81 EUR
100+1.61 EUR
250+1.51 EUR
500+1.45 EUR
1000+1.43 EUR
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SPP80N03S2L05
SPP80N03S2L05
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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IRLR2908TRLPBF-INF
IRLR2908TRLPBF-INF
Hersteller: Infineon Technologies
Description: IRLR2908 - HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 23A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D-Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
Produkt ist nicht verfügbar
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BCR198E6327 INFNS16386-1.pdf?t.download=true&u=5oefqw
BCR198E6327
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
auf Bestellung 147000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9616+0.063 EUR
Mindestbestellmenge: 9616 Stücke
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BCR198TE6327 INFNS09785-1.pdf?t.download=true&u=5oefqw
BCR198TE6327
Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 190 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8955+0.054 EUR
Mindestbestellmenge: 8955 Stücke
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BCR198WH6327 Infineon-BCR198SERIES-DS-v01_01-en[1].pdf?fileId=db3a304320d39d590121e8552c2f65bb
BCR198WH6327
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 190 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
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AUIR3316S-INF IRSDS11219-1.pdf?t.download=true&u=5oefqw
AUIR3316S-INF
Hersteller: Infineon Technologies
Description: LATCH BASED PERIPHERAL DRIVER, 1
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 5.5mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 26V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 23A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Adjustable), Over Temperature, Reverse Battery
Produkt ist nicht verfügbar
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BGSA133GN10E6327XTSA1
BGSA133GN10E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF ANT DEVICE 10TSNP
Packaging: Bulk
Package / Case: 10-XFQFN
Mounting Type: Surface Mount
Function: Switch
Supplier Device Package: PG-TSNP-10-1
auf Bestellung 255000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1024+0.56 EUR
Mindestbestellmenge: 1024 Stücke
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BGSA11GN10E6327XTSA1 Infineon-BGSA11GN10-DataSheet-v03_02-EN.pdf?fileId=5546d46255dd933d0155e9dac4e809ed
BGSA11GN10E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SPST 5GHZ TSNP10-1
Packaging: Cut Tape (CT)
Package / Case: 10-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPST
RF Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Insertion Loss: 0.35dB
Frequency Range: 100MHz ~ 5GHz
Test Frequency: 2.69GHz
Isolation: 14dB
Supplier Device Package: PG-TSNP-10-1
IIP3: 75dBm
Part Status: Active
auf Bestellung 2301 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
17+1.24 EUR
25+0.87 EUR
27+0.79 EUR
100+0.68 EUR
250+0.63 EUR
500+0.61 EUR
1000+0.58 EUR
Mindestbestellmenge: 17 Stücke
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CY7C1041GN-10ZSXI Infineon-CY7C1041GN_4-Mbit_(256K_words_16_bit)_Static_RAM-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed82ae859a5&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1041GN-10ZSXI
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
auf Bestellung 509 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+15.41 EUR
10+13.67 EUR
25+13.04 EUR
40+12.73 EUR
135+11.95 EUR
270+11.53 EUR
Mindestbestellmenge: 2 Stücke
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BGSA14GN10E6327XTSA1 Infineon-BGSA14GN10-DataSheet-v03_01-EN.pdf?fileId=5546d46255dd933d0155e9e3e86f09ff
BGSA14GN10E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SP4T 5GHZ TSNP10-1
Features: Single Line Control
Packaging: Tape & Reel (TR)
Package / Case: 10-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP4T
RF Type: Cellular, 3G, 4G
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Insertion Loss: 0.46dB
Frequency Range: 100MHz ~ 5GHz
Test Frequency: 2.69GHz
Isolation: 20dB
Supplier Device Package: PG-TSNP-10-1
Produkt ist nicht verfügbar
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BGSA14GN10E6327XTSA1 Infineon-BGSA14GN10-DataSheet-v03_01-EN.pdf?fileId=5546d46255dd933d0155e9e3e86f09ff
BGSA14GN10E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SP4T 5GHZ TSNP10-1
Features: Single Line Control
Packaging: Cut Tape (CT)
Package / Case: 10-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP4T
RF Type: Cellular, 3G, 4G
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Insertion Loss: 0.46dB
Frequency Range: 100MHz ~ 5GHz
Test Frequency: 2.69GHz
Isolation: 20dB
Supplier Device Package: PG-TSNP-10-1
auf Bestellung 5695 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
17+1.24 EUR
25+0.87 EUR
27+0.79 EUR
100+0.68 EUR
250+0.63 EUR
500+0.61 EUR
1000+0.58 EUR
2500+0.56 EUR
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BGSA133GN10E6327XTSA1
BGSA133GN10E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF ANT DEVICE 10TSNP
Packaging: Tape & Reel (TR)
Package / Case: 10-XFQFN
Mounting Type: Surface Mount
Function: Switch
Supplier Device Package: PG-TSNP-10-1
Produkt ist nicht verfügbar
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CY7C1041GN-10VXI Infineon-CY7C1041GN_4-Mbit_(256K_words_16_bit)_Static_RAM-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed82ae859a5&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1041GN-10VXI
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44SOJ
DigiKey Programmable: Not Verified
Memory Organization: 256K x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 44-SOJ
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 850 Stücke
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BSD235N L6327 BSD235N_Rev2.1.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30431add1d95011afc70075c04e0
BSD235N L6327
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 20V 0.95A SOT363
Produkt ist nicht verfügbar
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BSD235N L6327 BSD235N_Rev2.1.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30431add1d95011afc70075c04e0
BSD235N L6327
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 20V 0.95A SOT363
Produkt ist nicht verfügbar
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BSC025N03LSGATMA1 BSC025N03LS_rev1.6.pdf?fileId=db3a304412b407950112b4274ff53bff
BSC025N03LSGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 25A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 15 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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BSC025N03LSGATMA1 BSC025N03LS_rev1.6.pdf?fileId=db3a304412b407950112b4274ff53bff
BSC025N03LSGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 25A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 15 V
auf Bestellung 2015 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.42 EUR
10+2.18 EUR
100+1.46 EUR
500+1.17 EUR
1000+1.07 EUR
2000+0.99 EUR
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BCM89071A1CUBXGT Infineon-CYW89071_Single_Chip_Automotive_Grade_Bluetooth_Transceiver_and_Baseband_Processor-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1ff4c6835&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_a
BCM89071A1CUBXGT
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLUETOOTH 42UFBGA
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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SPP07N600S5 Infineon-SPP_I07N60S5-DS-v02_07-en.pdf?fileId=db3a304412b407950112b42c81144713
SPP07N600S5
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
400+1.81 EUR
Mindestbestellmenge: 400 Stücke
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IPB60R299CPAATMA1 INFN-S-A0003614947-1.pdf?t.download=true&u=5oefqw
IPB60R299CPAATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 11A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPB100N04S2L-03ATMA2 INFNS08598-1.pdf?t.download=true&u=5oefqw
IPB100N04S2L-03ATMA2
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
auf Bestellung 17740 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
144+4.38 EUR
Mindestbestellmenge: 144 Stücke
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IPB100N04S2L03ATMA2 Infineon-IPP_B100N04S2L-DS-v01_00-en.pdf?fileId=db3a304412b407950112b42b9443455d&ack=t
IPB100N04S2L03ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 100A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 51328 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
144+3.84 EUR
Mindestbestellmenge: 144 Stücke
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IKCM20L60GBXKMA1 INFN-S-A0003820769-1.pdf?t.download=true&u=5oefqw
IKCM20L60GBXKMA1
Hersteller: Infineon Technologies
Description: INTELLIGENT POWER MODULE (IPM)
Packaging: Bulk
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Part Status: Active
auf Bestellung 6655 Stücke:
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64+8.71 EUR
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IKCM15H60HAXXMA1
IKCM15H60HAXXMA1
Hersteller: Infineon Technologies
Description: INTELLIGENT POWER MODULE (IPM)
Packaging: Bulk
Package / Case: 24-PowerDIP Module
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 15A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 18.5V
Applications: Fan Motor Driver
Technology: IGBT
Supplier Device Package: 24-DIP
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: AC, Synchronous
Part Status: Active
Produkt ist nicht verfügbar
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IKCM10H60HAXKMA1 IKCM10H60HA.pdf
IKCM10H60HAXKMA1
Hersteller: Infineon Technologies
Description: IFPS MODULES 24MDIP
Packaging: Bulk
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 600 V
auf Bestellung 624 Stücke:
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50+11.2 EUR
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IKCM20L60HAXKMA1 IKCM20L60HA.pdf
IKCM20L60HAXKMA1
Hersteller: Infineon Technologies
Description: IGBT IPM 600V 20A 24-PWRDIP MOD
Packaging: Bulk
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 20 A
Voltage: 600 V
auf Bestellung 513 Stücke:
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34+16.06 EUR
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IKCM20L60HDXKMA1 IKCM20L60HD.pdf
IKCM20L60HDXKMA1
Hersteller: Infineon Technologies
Description: IGBT IPM 600V 20A 24-PWRDIP MOD
Packaging: Bulk
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 20 A
Voltage: 600 V
auf Bestellung 560 Stücke:
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AnzahlPrivatkunde
25+22.05 EUR
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IRFS4510TRLPBF IRSDS13318-1.pdf?t.download=true&u=5oefqw
IRFS4510TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 61A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 37A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3180 pF @ 50 V
auf Bestellung 1600 Stücke:
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800+2.01 EUR
1600+1.87 EUR
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BTT62001EJA INFN-S-A0000037746-1.pdf?t.download=true&u=5oefqw
BTT62001EJA
Hersteller: Infineon Technologies
Description: SMART HIGH-SIDE POWER SWITCH
Features: Slew Rate Controlled
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 200mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-44
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
Produkt ist nicht verfügbar
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BTT62004ESAXUMA1 Infineon-BTT6200-4ESA-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a22035b660d8d
BTT62004ESAXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-24
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 200mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-24-21
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 8891 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.63 EUR
10+5.77 EUR
25+5.31 EUR
100+4.8 EUR
250+4.55 EUR
500+4.53 EUR
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BTT62001ENAXUMA1 Infineon-BTT6200-1ENA-DS-v01_00-EN.pdf?fileId=5546d462636cc8fb01645f3a31f312e9
BTT62001ENAXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TDSO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 200mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-8-31
Fault Protection: Over Temperature, Over Voltage, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 7735 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.22 EUR
10+2.37 EUR
25+2.15 EUR
100+1.92 EUR
250+1.81 EUR
500+1.74 EUR
1000+1.73 EUR
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ESD239B1W0201E6327XTSA1 Infineon-ESD239-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d4625cc9456a015ce93613b14885
ESD239B1W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 22VWM 26.5VC WLL-2-3
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Capacitance @ Frequency: 3.2pF @ 1GHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 26.5V
Power - Peak Pulse: 80W
Power Line Protection: No
Produkt ist nicht verfügbar
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ESD239B1W0201E6327XTSA1 Infineon-ESD239-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d4625cc9456a015ce93613b14885
ESD239B1W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 22VWM 26.5VC WLL-2-3
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Capacitance @ Frequency: 3.2pF @ 1GHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 26.5V
Power - Peak Pulse: 80W
Power Line Protection: No
auf Bestellung 6859 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
48+0.44 EUR
77+0.27 EUR
108+0.19 EUR
125+0.17 EUR
500+0.12 EUR
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