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FS25R12KT3BOSA1 FS25R12KT3BOSA1 Infineon Technologies Infineon-FS25R12KT3-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b431414d53ef Description: IGBT MOD 1200V 40A 145W
Input Capacitance (Cies) @ Vce: 1.8 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 145 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 40 A
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A
Operating Temperature: -40°C ~ 125°C
Configuration: Full Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
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IPG20N04S409ATMA1 IPG20N04S409ATMA1 Infineon Technologies INFNS15593-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CHANNEL_30/40V
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BCR601XUMA1 BCR601XUMA1 Infineon Technologies Infineon-BCR601-DS-v01_01-EN.pdf?fileId=5546d46268554f4a016855b5d62d0023 Description: IC LED DRVR LIN ANALOG 10MA 8DSO
Part Status: Active
Voltage - Supply (Max): 60V
Dimming: Analog
Supplier Device Package: PG-DSO-8
Topology: Flyback
Internal Switch(s): No
Current - Output / Channel: 10mA
Applications: LED Lighting
Type: Linear
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BCR601XUMA1 BCR601XUMA1 Infineon Technologies Infineon-BCR601-DS-v01_01-EN.pdf?fileId=5546d46268554f4a016855b5d62d0023 Description: IC LED DRVR LIN ANALOG 10MA 8DSO
Part Status: Active
Voltage - Supply (Max): 60V
Dimming: Analog
Supplier Device Package: PG-DSO-8
Topology: Flyback
Internal Switch(s): No
Current - Output / Channel: 10mA
Applications: LED Lighting
Type: Linear
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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20+0.89 EUR
25+0.8 EUR
100+0.7 EUR
250+0.66 EUR
500+0.63 EUR
1000+0.6 EUR
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IPU80R1K4CEBKMA1 IPU80R1K4CEBKMA1 Infineon Technologies Infineon-IPX80R1K4CE-DS-v02_01-en.pdf?fileId=db3a304340155f3d01402f3b471926eb Description: MOSFET N-CH 800V 3.9A TO251-3
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-TO251-3
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Power Dissipation (Max): 63W (Tc)
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BGSF1717MN26E6327XTSA1 BGSF1717MN26E6327XTSA1 Infineon Technologies BGSF1717MN26.pdf Description: IC RF SWITCH SP7T 2.7GHZ TSNP26
Packaging: Bulk
Package / Case: 26-WFQFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP7T
RF Type: General Purpose
Voltage - Supply: 1.2V ~ 1.8V
Frequency Range: 100MHz ~ 2.7GHz
Supplier Device Package: PG-TSNP-26-3
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TLS810A1LDV33XUMA1 TLS810A1LDV33XUMA1 Infineon Technologies Infineon-TLS810A1LD+V33-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc1015921017a7b3679 Description: IC REG LIN 3.3V 100MA TSON-102
Packaging: Cut Tape (CT)
Package / Case: 10-TFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TSON-10-2
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.65V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 15 µA
Grade: Automotive
Qualification: AEC-Q100
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25+1.39 EUR
100+1.23 EUR
250+1.16 EUR
500+1.11 EUR
1000+1.07 EUR
2500+1.03 EUR
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IPA60R600E6XKSA1 IPA60R600E6XKSA1 Infineon Technologies IPA60R600E6_2_0.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a304327b8975001281b23402b1aa0 Description: MOSFET N-CH 600V 7.3A TO220-FP
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
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IPA60R520CP IPA60R520CP Infineon Technologies INFNS17418-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-111
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
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IPA60R280E6 IPA60R280E6 Infineon Technologies INFN-S-A0004583476-1.pdf?t.download=true&u=5oefqw Description: 600V 0.28OHM N-CHANNEL MOSFET
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-111
Vgs(th) (Max) @ Id: 3.5V @ 430µA
Power Dissipation (Max): 32W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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IPA60R299CP IPA60R299CP Infineon Technologies INFN-S-A0004583224-1.pdf?t.download=true&u=5oefqw Description: 600V COOLMOS POWER TRANSISTOR
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-31
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
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IPA60R190E6 IPA60R190E6 Infineon Technologies INFN-S-A0003614948-1.pdf?t.download=true&u=5oefqw Description: 600V 0.19OHM N-CHANNEL MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-111
Vgs(th) (Max) @ Id: 3.5V @ 630µA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Produkt ist nicht verfügbar
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IPA60R165CP IPA60R165CP Infineon Technologies INFNS16943-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 21A TO220
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TO220 Full Pack
Vgs(th) (Max) @ Id: 3.5V @ 790µA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
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IPA60R600E6 IPA60R600E6 Infineon Technologies INFN-S-A0004583464-1.pdf?t.download=true&u=5oefqw Description: 600V, 0.6OHM, N-CHANNEL, MOSFET
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-111
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Power Dissipation (Max): 28W (Tc)
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IPA60R520C6 IPA60R520C6 Infineon Technologies INFN-S-A0001300323-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Part Status: Active
Supplier Device Package: PG-TO220-3-111
Vgs(th) (Max) @ Id: 3.5V @ 230µA
Power Dissipation (Max): 29W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
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IPA60R520C6XKSA1 IPA60R520C6XKSA1 Infineon Technologies IPA60R520C6.pdf Description: MOSFET N-CH 600V 8.1A TO220-FP
Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.5V @ 230µA
Power Dissipation (Max): 29W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
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BAT1504RE6152HTSA1 BAT1504RE6152HTSA1 Infineon Technologies Infineon-BAT15-04R-DS-v02_00-EN.pdf?fileId=5546d46265f064ff0166389615154e83 Description: RF DIODE SCHOTTKY 4V PG-SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.25pF @ 0V, 1MHz
Resistance @ If, F: 18Ohm @ 5mA, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 110 mA
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IRGP30B120KD-EP-INF Infineon Technologies Description: MOTOR CONTROL CO-PACK IGBT W/ULT
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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BAR161E6327HTSA1 BAR161E6327HTSA1 Infineon Technologies Bar14_15_16.pdf Description: RF DIODE PIN 100V 250MW PG-SOT23
Power Dissipation (Max): 250 mW
Current - Max: 140 mA
Part Status: Obsolete
Supplier Device Package: PG-SOT23
Voltage - Peak Reverse (Max): 100V
Resistance @ If, F: 12Ohm @ 10mA, 100MHz
Capacitance @ Vr, F: 0.5pF @ 50V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - 1 Pair Common Anode
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
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BSC028N06NSSCATMA1 BSC028N06NSSCATMA1 Infineon Technologies Infineon-BSC028N06NSSC-DataSheet-v02_01-EN.pdf?fileId=5546d462727878c201727efd2c445c09 Description: MOSFET N-CH 60V 137A WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 137A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-WSON-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3375 pF @ 30 V
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BSC028N06NSSCATMA1 BSC028N06NSSCATMA1 Infineon Technologies Infineon-BSC028N06NSSC-DataSheet-v02_01-EN.pdf?fileId=5546d462727878c201727efd2c445c09 Description: MOSFET N-CH 60V 137A WSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 137A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-WSON-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3375 pF @ 30 V
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XMC1404Q048X0200AAXUMA1 XMC1404Q048X0200AAXUMA1 Infineon Technologies Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: IC MCU 32BIT 200KB FLASH 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-73
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
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XMC1404Q048X0200AAXUMA1 XMC1404Q048X0200AAXUMA1 Infineon Technologies Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: IC MCU 32BIT 200KB FLASH 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-73
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
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SIDC42D120E6X1SA4 Infineon Technologies SIDC42D120E6_L4192P.pdf?folderId=db3a304412b407950112b435e2a46402&fileId=db3a304412b407950112b435e3206403 Description: DIODE GP 1.2KV 50A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
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SIDC42D120F6X1SA3 Infineon Technologies SIDC42D120F6_L4195M.pdf?folderId=db3a304412b407950112b435635962d8&fileId=db3a304412b407950112b43563d462d9 Description: DIODE GP 1.2KV 50A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
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111-4181PBF Infineon Technologies Description: IC GATE DRIVER SMD
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TLE9183QKXUMA1 TLE9183QKXUMA1 Infineon Technologies Infineon-TLE9183QK-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8900bb570189018597be106e Description: IC GATE DRVR HALF-BRIDGE 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: PG-LQFP-64-28
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 3
Gate Type: MOSFET (N-Channel)
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q101
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BCR 521 E6327 Infineon Technologies INFNS16393-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
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BCW60DE6327 BCW60DE6327 Infineon Technologies INFNS11039-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 32V 0.1A SOT23
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
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BCW 60FF E6327 BCW 60FF E6327 Infineon Technologies INFNS11039-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 32V 0.1A SOT23
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
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BCW 60D E6327 BCW 60D E6327 Infineon Technologies INFNS11039-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 32V 0.1A SOT23
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
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BCW60FN BCW60FN Infineon Technologies INFNS19454-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 32V 0.1A SOT23-3
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23-3-1
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
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BCW60FE6327 BCW60FE6327 Infineon Technologies Infineon-BCW60_BCX70-DS-v01_01-en[1].pdf?fileId=db3a30432f91014f012fb516e6041665 Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23-3-1
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
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EVAL1ED44175N01BTOBO1 EVAL1ED44175N01BTOBO1 Infineon Technologies Infineon-Technical_description_1ED44175N01B_Low-side_driver-ApplicationNotes-v01_03-EN.pdf?fileId=5546d4626e41e490016e49fdf0691d81 Description: EVAL-1ED44175N01B
Part Status: Active
Embedded: Yes
Supplied Contents: Board(s)
Utilized IC / Part: 1ED44175N01B
Type: Power Management
Function: Gate Driver
Packaging: Bulk
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BSM35GD120DN2BOSA1 Infineon Technologies EUPCS02670-1.pdf?t.download=true&u=5oefqw Description: IGBT MODULE
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 280 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Part Status: Active
Supplier Device Package: AG-ECONOPACK 2K
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 35A
Operating Temperature: 150°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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PEF33008HLV2.1 Infineon Technologies Description: VINETIC VOICE ACCESS SOLUTION
Packaging: Bulk
Part Status: Active
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IPW60R280C6FKSA1 IPW60R280C6FKSA1 Infineon Technologies IPW60R280C6_2_1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a30432313ff5e0123a4478e7f275a Description: MOSFET N-CH 600V 13.8A TO247-3
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO247-3-1
Vgs(th) (Max) @ Id: 3.5V @ 430µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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IPW60R280C6 IPW60R280C6 Infineon Technologies INFN-S-A0004583477-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 13.8A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TO247-3-41
Vgs(th) (Max) @ Id: 3.5V @ 430µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
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IPW60R024P7XKSA1 IPW60R024P7XKSA1 Infineon Technologies Infineon-IPW60R024P7-DS-v02_00-EN.pdf?fileId=5546d462696dbf120169b48730044ab3 Description: MOSFET N-CH 650V 101A TO247-3-41
Input Capacitance (Ciss) (Max) @ Vds: 7144 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3-41
Vgs(th) (Max) @ Id: 4V @ 2.03mA
Power Dissipation (Max): 291W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 42.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 101A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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TT270N16KOFHPSA1 Infineon Technologies Infineon--DS-v03_02-EN.pdf?fileId=db3a304343fd3ea2014401a5b00c4d2b Description: SCR MODULE 1.6KV 450A MODULE
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TLE42694GXUMA2 TLE42694GXUMA2 Infineon Technologies Infineon-TLE42694-2EL-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159f967f7863e53 Description: IC REG LINEAR 5V 100MA 8DSO
Qualification: AEC-Q100
Grade: Automotive
Packaging: Cut Tape (CT)
Current - Supply (Max): 8 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Voltage Dropout (Max): 0.5V @ 100mA
PSRR: 70dB (100Hz)
Part Status: Active
Control Features: Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-DSO-8
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 280 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 100mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width)
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11+1.7 EUR
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100+1.37 EUR
250+1.29 EUR
500+1.24 EUR
1000+1.19 EUR
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ICL8001G ICL8001G Infineon Technologies INFNS16795-1.pdf?t.download=true&u=5oefqw Description: FLYBACK AND PFC LED CONTROLLER
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ICL8002G ICL8002G Infineon Technologies INFNS19108-1.pdf?t.download=true&u=5oefqw Description: IC LED DRIVER OFFL PWM 8DSO
Voltage - Supply (Max): 26V
Voltage - Supply (Min): 9.8V
Dimming: PWM
Supplier Device Package: PG-DSO-8
Topology: Flyback, Step-Down (Buck)
Internal Switch(s): No
Applications: LED Lighting
Operating Temperature: -40°C ~ 150°C (TJ)
Type: AC DC Offline Switcher
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
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BCW68HE6327 BCW68HE6327 Infineon Technologies INFNS11571-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
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ICE3AR10080JZTXKLA1 ICE3AR10080JZTXKLA1 Infineon Technologies INFNS26909-1.pdf?t.download=true&u=5oefqw Description: 1.1A, 113KHZ SWITCHING FREQ-MAX
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -20°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DIP-7-4
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage, UVLO
Voltage - Start Up: 17 V
Control Features: Soft Start
Part Status: Active
Power (Watts): 22 W
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ICE3A2065I ICE3A2065I Infineon Technologies CoolSET-F3.pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304412b407950112b428f6ba3f30 Description: IC OFFLINE SWITCH FLYBACK TO220
Power (Watts): 102 W
Part Status: Discontinued at Digi-Key
Control Features: Soft Start
Voltage - Start Up: 15 V
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-TO220-6-46
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 72%
Operating Temperature: -25°C ~ 130°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-6 Formed Leads
Packaging: Bulk
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ICE3A0565 ICE3A0565 Infineon Technologies INFNS22601-1.pdf?t.download=true&u=5oefqw description Description: 100KHZ SWITCHING FREQ-MAX
Packaging: Bulk
Part Status: Active
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SMBTA14E6327HTSA1872 SMBTA14E6327HTSA1872 Infineon Technologies SIEMD096-1805.pdf?t.download=true&u=5oefqw Description: TRANS NPN DARL 30V 0.3A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
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SMBTA14E6327 SMBTA14E6327 Infineon Technologies INFNS10710-1.pdf?t.download=true&u=5oefqw Description: TRANSISTOR DARLINGTON NPN 30V
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT23-3-1
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
Qualification: AEC-Q101
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SMBTA14E6327XT SMBTA14E6327XT Infineon Technologies SIEMD096-1805.pdf?t.download=true&u=5oefqw Description: TRANS NPN DARL 30V 0.3A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
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2ED21814S06JXUMA1 2ED21814S06JXUMA1 Infineon Technologies infineon-2edl23-final-rev2.9-datasheet-en.pdf Description: IC GATE DRVR HI/LOW SIDE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-14
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Independent
Driven Configuration: High-Side, Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
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10+2.83 EUR
25+2.58 EUR
100+2.31 EUR
250+2.18 EUR
500+2.1 EUR
1000+2.03 EUR
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2ED2182S06FXUMA1 2ED2182S06FXUMA1 Infineon Technologies Infineon-2ED2182-4-S06F-J-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d7368a29e3 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Channel Type: Synchronous
Rise / Fall Time (Typ): 15ns, 15ns
Supplier Device Package: PG-DSO-8-69
High Side Voltage - Max (Bootstrap): 650 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: Half-Bridge
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2ED2182S06FXUMA1 2ED2182S06FXUMA1 Infineon Technologies Infineon-2ED2182-4-S06F-J-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d7368a29e3 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Part Status: Active
Current - Peak Output (Source, Sink): 2.5A, 2.5A
DigiKey Programmable: Not Verified
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 15ns, 15ns
Supplier Device Package: PG-DSO-8-69
High Side Voltage - Max (Bootstrap): 650 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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100+1.66 EUR
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2ED2181S06FXUMA1 2ED2181S06FXUMA1 Infineon Technologies Infineon-2ED2181-4-S06F-J-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016cb8d75bd229f3 Description: IC GATE DRVR HI/LOW SIDE 8SOIC
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: High-Side or Low-Side
Channel Type: Synchronous
Rise / Fall Time (Typ): 15ns, 15ns
Supplier Device Package: PG-DSO-8-53
High Side Voltage - Max (Bootstrap): 650 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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2ED2181S06FXUMA1 2ED2181S06FXUMA1 Infineon Technologies Infineon-2ED2181-4-S06F-J-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016cb8d75bd229f3 Description: IC GATE DRVR HI/LOW SIDE 8SOIC
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: High-Side or Low-Side
Channel Type: Synchronous
Rise / Fall Time (Typ): 15ns, 15ns
Supplier Device Package: PG-DSO-8-53
High Side Voltage - Max (Bootstrap): 650 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 2637 Stücke:
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7+2.78 EUR
10+2.04 EUR
25+1.86 EUR
100+1.66 EUR
250+1.56 EUR
500+1.5 EUR
1000+1.45 EUR
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2ED2183S06FXUMA1 2ED2183S06FXUMA1 Infineon Technologies infineon-2ed2184-4-s06f-j-datasheet-en.pdf Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-53
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
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5000+1.65 EUR
7500+1.63 EUR
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2ED2183S06FXUMA1 2ED2183S06FXUMA1 Infineon Technologies infineon-2ed2184-4-s06f-j-datasheet-en.pdf Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-53
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
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250+1.87 EUR
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2ED21824S06JXUMA1 2ED21824S06JXUMA1 Infineon Technologies Infineon-2ED2182-4-S06F-J-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d7368a29e3 Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-14-49
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2ED21824S06JXUMA1 2ED21824S06JXUMA1 Infineon Technologies Infineon-2ED2182-4-S06F-J-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d7368a29e3 Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-14-49
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
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10+2.38 EUR
25+2.17 EUR
100+1.94 EUR
250+1.83 EUR
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1000+1.71 EUR
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2ED21834S06JXUMA1 2ED21834S06JXUMA1 Infineon Technologies Infineon-2ED2183-4-S06F-J-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016cb8d765b229f7 Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-14-49
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
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2500+1.49 EUR
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FS25R12KT3BOSA1 Infineon-FS25R12KT3-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b431414d53ef
FS25R12KT3BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 40A 145W
Input Capacitance (Cies) @ Vce: 1.8 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 145 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 40 A
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A
Operating Temperature: -40°C ~ 125°C
Configuration: Full Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
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IPG20N04S409ATMA1 INFNS15593-1.pdf?t.download=true&u=5oefqw
IPG20N04S409ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CHANNEL_30/40V
Produkt ist nicht verfügbar
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BCR601XUMA1 Infineon-BCR601-DS-v01_01-EN.pdf?fileId=5546d46268554f4a016855b5d62d0023
BCR601XUMA1
Hersteller: Infineon Technologies
Description: IC LED DRVR LIN ANALOG 10MA 8DSO
Part Status: Active
Voltage - Supply (Max): 60V
Dimming: Analog
Supplier Device Package: PG-DSO-8
Topology: Flyback
Internal Switch(s): No
Current - Output / Channel: 10mA
Applications: LED Lighting
Type: Linear
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BCR601XUMA1 Infineon-BCR601-DS-v01_01-EN.pdf?fileId=5546d46268554f4a016855b5d62d0023
BCR601XUMA1
Hersteller: Infineon Technologies
Description: IC LED DRVR LIN ANALOG 10MA 8DSO
Part Status: Active
Voltage - Supply (Max): 60V
Dimming: Analog
Supplier Device Package: PG-DSO-8
Topology: Flyback
Internal Switch(s): No
Current - Output / Channel: 10mA
Applications: LED Lighting
Type: Linear
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 2098 Stücke:
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AnzahlPreis
14+1.27 EUR
20+0.89 EUR
25+0.8 EUR
100+0.7 EUR
250+0.66 EUR
500+0.63 EUR
1000+0.6 EUR
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IPU80R1K4CEBKMA1 Infineon-IPX80R1K4CE-DS-v02_01-en.pdf?fileId=db3a304340155f3d01402f3b471926eb
IPU80R1K4CEBKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 3.9A TO251-3
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-TO251-3
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Power Dissipation (Max): 63W (Tc)
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567+0.81 EUR
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BGSF1717MN26E6327XTSA1 BGSF1717MN26.pdf
BGSF1717MN26E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SP7T 2.7GHZ TSNP26
Packaging: Bulk
Package / Case: 26-WFQFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP7T
RF Type: General Purpose
Voltage - Supply: 1.2V ~ 1.8V
Frequency Range: 100MHz ~ 2.7GHz
Supplier Device Package: PG-TSNP-26-3
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AnzahlPreis
262+1.69 EUR
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TLS810A1LDV33XUMA1 Infineon-TLS810A1LD+V33-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc1015921017a7b3679
TLS810A1LDV33XUMA1
Hersteller: Infineon Technologies
Description: IC REG LIN 3.3V 100MA TSON-102
Packaging: Cut Tape (CT)
Package / Case: 10-TFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount, Wettable Flank
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TSON-10-2
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.65V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 15 µA
Grade: Automotive
Qualification: AEC-Q100
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AnzahlPreis
9+2.11 EUR
12+1.54 EUR
25+1.39 EUR
100+1.23 EUR
250+1.16 EUR
500+1.11 EUR
1000+1.07 EUR
2500+1.03 EUR
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IPA60R600E6XKSA1 IPA60R600E6_2_0.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a304327b8975001281b23402b1aa0
IPA60R600E6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 7.3A TO220-FP
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
auf Bestellung 1105 Stücke:
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AnzahlPreis
438+1.12 EUR
Mindestbestellmenge: 438 Stücke
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IPA60R520CP INFNS17418-1.pdf?t.download=true&u=5oefqw
IPA60R520CP
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-111
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
auf Bestellung 55486 Stücke:
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AnzahlPreis
270+1.78 EUR
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IPA60R280E6 INFN-S-A0004583476-1.pdf?t.download=true&u=5oefqw
IPA60R280E6
Hersteller: Infineon Technologies
Description: 600V 0.28OHM N-CHANNEL MOSFET
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-111
Vgs(th) (Max) @ Id: 3.5V @ 430µA
Power Dissipation (Max): 32W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
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IPA60R299CP INFN-S-A0004583224-1.pdf?t.download=true&u=5oefqw
IPA60R299CP
Hersteller: Infineon Technologies
Description: 600V COOLMOS POWER TRANSISTOR
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-31
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Produkt ist nicht verfügbar
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IPA60R190E6 INFN-S-A0003614948-1.pdf?t.download=true&u=5oefqw
IPA60R190E6
Hersteller: Infineon Technologies
Description: 600V 0.19OHM N-CHANNEL MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-111
Vgs(th) (Max) @ Id: 3.5V @ 630µA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Produkt ist nicht verfügbar
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IPA60R165CP INFNS16943-1.pdf?t.download=true&u=5oefqw
IPA60R165CP
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 21A TO220
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TO220 Full Pack
Vgs(th) (Max) @ Id: 3.5V @ 790µA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Produkt ist nicht verfügbar
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IPA60R600E6 INFN-S-A0004583464-1.pdf?t.download=true&u=5oefqw
IPA60R600E6
Hersteller: Infineon Technologies
Description: 600V, 0.6OHM, N-CHANNEL, MOSFET
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-111
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Power Dissipation (Max): 28W (Tc)
auf Bestellung 640 Stücke:
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AnzahlPreis
379+1.27 EUR
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IPA60R520C6 INFN-S-A0001300323-1.pdf?t.download=true&u=5oefqw
IPA60R520C6
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Part Status: Active
Supplier Device Package: PG-TO220-3-111
Vgs(th) (Max) @ Id: 3.5V @ 230µA
Power Dissipation (Max): 29W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar
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IPA60R520C6XKSA1 IPA60R520C6.pdf
IPA60R520C6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 8.1A TO220-FP
Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.5V @ 230µA
Power Dissipation (Max): 29W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
auf Bestellung 111009 Stücke:
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AnzahlPreis
424+1.15 EUR
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BAT1504RE6152HTSA1 Infineon-BAT15-04R-DS-v02_00-EN.pdf?fileId=5546d46265f064ff0166389615154e83
BAT1504RE6152HTSA1
Hersteller: Infineon Technologies
Description: RF DIODE SCHOTTKY 4V PG-SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.25pF @ 0V, 1MHz
Resistance @ If, F: 18Ohm @ 5mA, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 110 mA
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Lieferzeit 10-14 Tag (e)
AnzahlPreis
15+1.23 EUR
24+0.76 EUR
100+0.49 EUR
500+0.37 EUR
1000+0.34 EUR
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IRGP30B120KD-EP-INF
Hersteller: Infineon Technologies
Description: MOTOR CONTROL CO-PACK IGBT W/ULT
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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BAR161E6327HTSA1 Bar14_15_16.pdf
BAR161E6327HTSA1
Hersteller: Infineon Technologies
Description: RF DIODE PIN 100V 250MW PG-SOT23
Power Dissipation (Max): 250 mW
Current - Max: 140 mA
Part Status: Obsolete
Supplier Device Package: PG-SOT23
Voltage - Peak Reverse (Max): 100V
Resistance @ If, F: 12Ohm @ 10mA, 100MHz
Capacitance @ Vr, F: 0.5pF @ 50V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - 1 Pair Common Anode
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
auf Bestellung 66000 Stücke:
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AnzahlPreis
1420+0.32 EUR
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BSC028N06NSSCATMA1 Infineon-BSC028N06NSSC-DataSheet-v02_01-EN.pdf?fileId=5546d462727878c201727efd2c445c09
BSC028N06NSSCATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 137A WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 137A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-WSON-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3375 pF @ 30 V
auf Bestellung 12000 Stücke:
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AnzahlPreis
4000+1.55 EUR
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BSC028N06NSSCATMA1 Infineon-BSC028N06NSSC-DataSheet-v02_01-EN.pdf?fileId=5546d462727878c201727efd2c445c09
BSC028N06NSSCATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 137A WSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 137A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-WSON-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3375 pF @ 30 V
auf Bestellung 14210 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+4.91 EUR
10+3.2 EUR
100+2.22 EUR
500+1.9 EUR
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XMC1404Q048X0200AAXUMA1 Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1404Q048X0200AAXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 200KB FLASH 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-73
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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XMC1404Q048X0200AAXUMA1 Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1404Q048X0200AAXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 200KB FLASH 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-73
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SIDC42D120E6X1SA4 SIDC42D120E6_L4192P.pdf?folderId=db3a304412b407950112b435e2a46402&fileId=db3a304412b407950112b435e3206403
Hersteller: Infineon Technologies
Description: DIODE GP 1.2KV 50A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Produkt ist nicht verfügbar
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SIDC42D120F6X1SA3 SIDC42D120F6_L4195M.pdf?folderId=db3a304412b407950112b435635962d8&fileId=db3a304412b407950112b43563d462d9
Hersteller: Infineon Technologies
Description: DIODE GP 1.2KV 50A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Produkt ist nicht verfügbar
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111-4181PBF
Hersteller: Infineon Technologies
Description: IC GATE DRIVER SMD
Produkt ist nicht verfügbar
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TLE9183QKXUMA1 Infineon-TLE9183QK-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8900bb570189018597be106e
TLE9183QKXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: PG-LQFP-64-28
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 3
Gate Type: MOSFET (N-Channel)
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BCR 521 E6327 INFNS16393-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Produkt ist nicht verfügbar
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BCW60DE6327 INFNS11039-1.pdf?t.download=true&u=5oefqw
BCW60DE6327
Hersteller: Infineon Technologies
Description: TRANS NPN 32V 0.1A SOT23
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
auf Bestellung 13852 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7397+0.065 EUR
Mindestbestellmenge: 7397 Stücke
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BCW 60FF E6327 INFNS11039-1.pdf?t.download=true&u=5oefqw
BCW 60FF E6327
Hersteller: Infineon Technologies
Description: TRANS NPN 32V 0.1A SOT23
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6340+0.088 EUR
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BCW 60D E6327 INFNS11039-1.pdf?t.download=true&u=5oefqw
BCW 60D E6327
Hersteller: Infineon Technologies
Description: TRANS NPN 32V 0.1A SOT23
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8013+0.07 EUR
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BCW60FN INFNS19454-1.pdf?t.download=true&u=5oefqw
BCW60FN
Hersteller: Infineon Technologies
Description: TRANS NPN 32V 0.1A SOT23-3
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23-3-1
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Produkt ist nicht verfügbar
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BCW60FE6327 Infineon-BCW60_BCX70-DS-v01_01-en[1].pdf?fileId=db3a30432f91014f012fb516e6041665
BCW60FE6327
Hersteller: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23-3-1
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Produkt ist nicht verfügbar
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EVAL1ED44175N01BTOBO1 Infineon-Technical_description_1ED44175N01B_Low-side_driver-ApplicationNotes-v01_03-EN.pdf?fileId=5546d4626e41e490016e49fdf0691d81
EVAL1ED44175N01BTOBO1
Hersteller: Infineon Technologies
Description: EVAL-1ED44175N01B
Part Status: Active
Embedded: Yes
Supplied Contents: Board(s)
Utilized IC / Part: 1ED44175N01B
Type: Power Management
Function: Gate Driver
Packaging: Bulk
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+46.38 EUR
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BSM35GD120DN2BOSA1 EUPCS02670-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IGBT MODULE
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 280 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Part Status: Active
Supplier Device Package: AG-ECONOPACK 2K
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 35A
Operating Temperature: 150°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Produkt ist nicht verfügbar
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PEF33008HLV2.1
Hersteller: Infineon Technologies
Description: VINETIC VOICE ACCESS SOLUTION
Packaging: Bulk
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
47+10.53 EUR
Mindestbestellmenge: 47 Stücke
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IPW60R280C6FKSA1 IPW60R280C6_2_1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a30432313ff5e0123a4478e7f275a
IPW60R280C6FKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 13.8A TO247-3
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO247-3-1
Vgs(th) (Max) @ Id: 3.5V @ 430µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 14160 Stücke:
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AnzahlPreis
216+2.09 EUR
Mindestbestellmenge: 216 Stücke
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IPW60R280C6 INFN-S-A0004583477-1.pdf?t.download=true&u=5oefqw
IPW60R280C6
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 13.8A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-TO247-3-41
Vgs(th) (Max) @ Id: 3.5V @ 430µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
auf Bestellung 210 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
210+2.47 EUR
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IPW60R024P7XKSA1 Infineon-IPW60R024P7-DS-v02_00-EN.pdf?fileId=5546d462696dbf120169b48730044ab3
IPW60R024P7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 101A TO247-3-41
Input Capacitance (Ciss) (Max) @ Vds: 7144 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3-41
Vgs(th) (Max) @ Id: 4V @ 2.03mA
Power Dissipation (Max): 291W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 42.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 101A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 927 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+18.3 EUR
30+11 EUR
120+9.4 EUR
510+8.92 EUR
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TT270N16KOFHPSA1 Infineon--DS-v03_02-EN.pdf?fileId=db3a304343fd3ea2014401a5b00c4d2b
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 450A MODULE
Produkt ist nicht verfügbar
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TLE42694GXUMA2 Infineon-TLE42694-2EL-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159f967f7863e53
TLE42694GXUMA2
Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 100MA 8DSO
Qualification: AEC-Q100
Grade: Automotive
Packaging: Cut Tape (CT)
Current - Supply (Max): 8 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Voltage Dropout (Max): 0.5V @ 100mA
PSRR: 70dB (100Hz)
Part Status: Active
Control Features: Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-DSO-8
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 280 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 100mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width)
auf Bestellung 4982 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8+2.34 EUR
11+1.7 EUR
25+1.54 EUR
100+1.37 EUR
250+1.29 EUR
500+1.24 EUR
1000+1.19 EUR
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ICL8001G INFNS16795-1.pdf?t.download=true&u=5oefqw
ICL8001G
Hersteller: Infineon Technologies
Description: FLYBACK AND PFC LED CONTROLLER
auf Bestellung 237659 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
419+1.16 EUR
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ICL8002G INFNS19108-1.pdf?t.download=true&u=5oefqw
ICL8002G
Hersteller: Infineon Technologies
Description: IC LED DRIVER OFFL PWM 8DSO
Voltage - Supply (Max): 26V
Voltage - Supply (Min): 9.8V
Dimming: PWM
Supplier Device Package: PG-DSO-8
Topology: Flyback, Step-Down (Buck)
Internal Switch(s): No
Applications: LED Lighting
Operating Temperature: -40°C ~ 150°C (TJ)
Type: AC DC Offline Switcher
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Produkt ist nicht verfügbar
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BCW68HE6327 INFNS11571-1.pdf?t.download=true&u=5oefqw
BCW68HE6327
Hersteller: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Produkt ist nicht verfügbar
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ICE3AR10080JZTXKLA1 INFNS26909-1.pdf?t.download=true&u=5oefqw
ICE3AR10080JZTXKLA1
Hersteller: Infineon Technologies
Description: 1.1A, 113KHZ SWITCHING FREQ-MAX
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -20°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DIP-7-4
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage, UVLO
Voltage - Start Up: 17 V
Control Features: Soft Start
Part Status: Active
Power (Watts): 22 W
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
240+1.9 EUR
Mindestbestellmenge: 240 Stücke
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ICE3A2065I CoolSET-F3.pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304412b407950112b428f6ba3f30
ICE3A2065I
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK TO220
Power (Watts): 102 W
Part Status: Discontinued at Digi-Key
Control Features: Soft Start
Voltage - Start Up: 15 V
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-TO220-6-46
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 72%
Operating Temperature: -25°C ~ 130°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-6 Formed Leads
Packaging: Bulk
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
185+2.48 EUR
Mindestbestellmenge: 185 Stücke
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ICE3A0565 description INFNS22601-1.pdf?t.download=true&u=5oefqw
ICE3A0565
Hersteller: Infineon Technologies
Description: 100KHZ SWITCHING FREQ-MAX
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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SMBTA14E6327HTSA1872 SIEMD096-1805.pdf?t.download=true&u=5oefqw
SMBTA14E6327HTSA1872
Hersteller: Infineon Technologies
Description: TRANS NPN DARL 30V 0.3A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMBTA14E6327 INFNS10710-1.pdf?t.download=true&u=5oefqw
SMBTA14E6327
Hersteller: Infineon Technologies
Description: TRANSISTOR DARLINGTON NPN 30V
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT23-3-1
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
Qualification: AEC-Q101
auf Bestellung 210081 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2874+0.16 EUR
Mindestbestellmenge: 2874 Stücke
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SMBTA14E6327XT SIEMD096-1805.pdf?t.download=true&u=5oefqw
SMBTA14E6327XT
Hersteller: Infineon Technologies
Description: TRANS NPN DARL 30V 0.3A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2874+0.16 EUR
Mindestbestellmenge: 2874 Stücke
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2ED21814S06JXUMA1 infineon-2edl23-final-rev2.9-datasheet-en.pdf
2ED21814S06JXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-14
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Independent
Driven Configuration: High-Side, Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2252 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5+3.84 EUR
10+2.83 EUR
25+2.58 EUR
100+2.31 EUR
250+2.18 EUR
500+2.1 EUR
1000+2.03 EUR
Mindestbestellmenge: 5 Stücke
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2ED2182S06FXUMA1 Infineon-2ED2182-4-S06F-J-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d7368a29e3
2ED2182S06FXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Channel Type: Synchronous
Rise / Fall Time (Typ): 15ns, 15ns
Supplier Device Package: PG-DSO-8-69
High Side Voltage - Max (Bootstrap): 650 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: Half-Bridge
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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2ED2182S06FXUMA1 Infineon-2ED2182-4-S06F-J-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d7368a29e3
2ED2182S06FXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Part Status: Active
Current - Peak Output (Source, Sink): 2.5A, 2.5A
DigiKey Programmable: Not Verified
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 15ns, 15ns
Supplier Device Package: PG-DSO-8-69
High Side Voltage - Max (Bootstrap): 650 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 154 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7+2.78 EUR
10+2.04 EUR
25+1.86 EUR
100+1.66 EUR
Mindestbestellmenge: 7 Stücke
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2ED2181S06FXUMA1 Infineon-2ED2181-4-S06F-J-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016cb8d75bd229f3
2ED2181S06FXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8SOIC
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: High-Side or Low-Side
Channel Type: Synchronous
Rise / Fall Time (Typ): 15ns, 15ns
Supplier Device Package: PG-DSO-8-53
High Side Voltage - Max (Bootstrap): 650 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2ED2181S06FXUMA1 Infineon-2ED2181-4-S06F-J-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016cb8d75bd229f3
2ED2181S06FXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8SOIC
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: High-Side or Low-Side
Channel Type: Synchronous
Rise / Fall Time (Typ): 15ns, 15ns
Supplier Device Package: PG-DSO-8-53
High Side Voltage - Max (Bootstrap): 650 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 2637 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7+2.78 EUR
10+2.04 EUR
25+1.86 EUR
100+1.66 EUR
250+1.56 EUR
500+1.5 EUR
1000+1.45 EUR
Mindestbestellmenge: 7 Stücke
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2ED2183S06FXUMA1 infineon-2ed2184-4-s06f-j-datasheet-en.pdf
2ED2183S06FXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-53
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+1.68 EUR
5000+1.65 EUR
7500+1.63 EUR
Mindestbestellmenge: 2500 Stücke
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2ED2183S06FXUMA1 infineon-2ed2184-4-s06f-j-datasheet-en.pdf
2ED2183S06FXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-53
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 12505 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+3.33 EUR
10+2.45 EUR
25+2.23 EUR
100+1.99 EUR
250+1.87 EUR
500+1.8 EUR
1000+1.75 EUR
Mindestbestellmenge: 6 Stücke
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2ED21824S06JXUMA1 Infineon-2ED2182-4-S06F-J-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d7368a29e3
2ED21824S06JXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-14-49
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
2ED21824S06JXUMA1 Infineon-2ED2182-4-S06F-J-DataSheet-v02_10-EN.pdf?fileId=5546d4626cb27db2016cb8d7368a29e3
2ED21824S06JXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-14-49
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2545 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+3.22 EUR
10+2.38 EUR
25+2.17 EUR
100+1.94 EUR
250+1.83 EUR
500+1.76 EUR
1000+1.71 EUR
Mindestbestellmenge: 6 Stücke
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2ED21834S06JXUMA1 Infineon-2ED2183-4-S06F-J-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016cb8d765b229f7
2ED21834S06JXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-14-49
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+1.49 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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