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BSP297L6327 BSP297L6327 Infineon Technologies INFNS13388-1.pdf?t.download=true&u=5oefqw Description: SMALL-SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 660mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4-21
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 357 pF @ 25 V
Produkt ist nicht verfügbar
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BSP295L6327 BSP295L6327 Infineon Technologies INFNS16525-1.pdf?t.download=true&u=5oefqw description Description: SMALL-SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.8A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 368 pF @ 25 V
auf Bestellung 308310 Stücke:
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831+0.6 EUR
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BGF148E6327XTSA1 Infineon Technologies BGF148_Rev1.9.2_4-2-14.pdf Description: IC INTERFACE PROTECTION TSNP14-2
Produkt ist nicht verfügbar
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S6E2C29J0AGV2000A S6E2C29J0AGV2000A Infineon Technologies download Description: IC MCU 32BIT 1.5MB FLASH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, Ethernet, I²C, LINbus, SD, SPI, UART/USART, USB
Peripherals: DMA, I²S, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Part Status: Active
Number of I/O: 152
Produkt ist nicht verfügbar
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SIDC09D60E6X1SA1 Infineon Technologies SIDC09D60E6_L4303M.pdf?folderId=db3a304412b407950112b435faf1643e&fileId=db3a304412b407950112b435fb6e643f Description: DIODE STD 600V 20A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
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SIDC09D60E6 UNSAWN Infineon Technologies fundamentals-of-power-semiconductors Description: DIODE STD 600V 20A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIDC09D60E6YX1SA1 Infineon Technologies SIDC09D60E6.pdf Description: DIODE GP 600V 20A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
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SIDC09D60F6X1SA2 Infineon Technologies SIDC09D60F6_L4304M.pdf?folderId=db3a304412b407950112b435f4e8642f&fileId=db3a304412b407950112b435f5666430 Description: DIODE GP 600V 30A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
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SIDC09D60F6X1SA1 Infineon Technologies SIDC09D60F6_ed2.2_3-9-10.pdf Description: DIODE GEN PURP 600V 30A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
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SIDC09D60F6X1SA4 Infineon Technologies SIDC09D60F6_ed2.2_3-9-10.pdf Description: DIODE GEN PURP 600V 30A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
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SIDC09D60E6X1SA3 Infineon Technologies SIDC09D60E6.pdf Description: DIODE GEN PURP 600V 20A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
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SIDC09D60F6X1SA5 Infineon Technologies SIDC09D60F6_ed2.2_3-9-10.pdf Description: DIODE GEN PURP 600V 30A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
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IPD60R180P7ATMA1 IPD60R180P7ATMA1 Infineon Technologies Infineon-IPD60R180P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5bd338b83cb3 Description: MOSFET N-CH 600V 18A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.04 EUR
Mindestbestellmenge: 2500
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IPD60R180P7ATMA1 IPD60R180P7ATMA1 Infineon Technologies Infineon-IPD60R180P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5bd338b83cb3 Description: MOSFET N-CH 600V 18A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
auf Bestellung 3251 Stücke:
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5+3.64 EUR
10+2.34 EUR
100+1.6 EUR
500+1.28 EUR
1000+1.26 EUR
Mindestbestellmenge: 5
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IPD60R180C7ATMA1 IPD60R180C7ATMA1 Infineon Technologies Infineon-IPD60R180C7-DS-v02_00-EN.pdf?fileId=5546d4624fb7fef2014fd622c0914c61 Description: MOSFET N-CH 600V 13A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.3A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 260µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
auf Bestellung 1694 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.14 EUR
10+3.09 EUR
100+2.23 EUR
500+1.76 EUR
1000+1.61 EUR
Mindestbestellmenge: 5
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TLS102B0MBBOARDTOBO1 TLS102B0MBBOARDTOBO1 Infineon Technologies Infineon-Z8F61701244_TLS10xB0MB_Demoboards-UserManual-v01_00-EN.pdf?fileId=5546d46262b31d2e016317dad3046601 Description: EVAL BOARD FOR TLS102B0MB
Packaging: Box
Voltage - Output: 2V ~ 14V
Voltage - Input: 4V ~ 45V
Current - Output: 20mA
Regulator Type: Positive Adjustable
Board Type: Fully Populated
Utilized IC / Part: TLS102B0MB
Supplied Contents: Board(s)
Channels per IC: 1 - Single
Contents: Board(s)
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+54.07 EUR
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IRLR120NTRLPBF IRLR120NTRLPBF Infineon Technologies irlr120npbf.pdf?fileId=5546d462533600a40153566965182665 Description: MOSFET N-CH 100V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 6A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Produkt ist nicht verfügbar
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IAUZ40N10S5N130ATMA1 IAUZ40N10S5N130ATMA1 Infineon Technologies Infineon-IAUZ40N10S5N130-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a62b6cf0ddb Description: MOSFET N-CH 100V 40A 8TSDSON-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 27µA
Supplier Device Package: PG-TSDSON-8-33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1525 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.65 EUR
Mindestbestellmenge: 5000
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IAUZ40N10S5N130ATMA1 IAUZ40N10S5N130ATMA1 Infineon Technologies Infineon-IAUZ40N10S5N130-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a62b6cf0ddb Description: MOSFET N-CH 100V 40A 8TSDSON-33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 27µA
Supplier Device Package: PG-TSDSON-8-33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1525 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14562 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.6 EUR
11+1.65 EUR
100+1.11 EUR
500+0.87 EUR
1000+0.8 EUR
2000+0.79 EUR
Mindestbestellmenge: 7
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BSC040N10NS5SCATMA1 BSC040N10NS5SCATMA1 Infineon Technologies Infineon-BSC040N10NS5SC-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701712f7dd8030083 Description: MOSFET N-CH 100V 140A WSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 95µA
Supplier Device Package: PG-WSON-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 50 V
Produkt ist nicht verfügbar
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BSC040N10NS5SCATMA1 BSC040N10NS5SCATMA1 Infineon Technologies Infineon-BSC040N10NS5SC-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701712f7dd8030083 Description: MOSFET N-CH 100V 140A WSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 95µA
Supplier Device Package: PG-WSON-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 50 V
Produkt ist nicht verfügbar
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CY8CTMA120-56LTXI CY8CTMA120-56LTXI Infineon Technologies Description: IC TRUETOUCH CAPSENSE 56VQFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I²C, SPI, UART/USART, USB
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.25V
Controller Series: CY8CT
Program Memory Type: FLASH (16kB)
Applications: Touchscreen Controller
Core Processor: M8C
Supplier Device Package: 56-QFN (8x8)
Part Status: Obsolete
DigiKey Programmable: Not Verified
auf Bestellung 2485 Stücke:
Lieferzeit 10-14 Tag (e)
35+15.24 EUR
Mindestbestellmenge: 35
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S25FL064LABMFM003 S25FL064LABMFM003 Infineon Technologies Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 64MBIT SPI/QUAD 16SOIC
Produkt ist nicht verfügbar
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S25FL128LAGMFM013 S25FL128LAGMFM013 Infineon Technologies Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Description: IC FLASH 128MBIT SPI/QUAD 8SOIC
Produkt ist nicht verfügbar
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CG8280AA Infineon Technologies Description: IC MEMORY F-RAM SER 8SOIC
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CG8280AAT Infineon Technologies Description: IC MEMORY F-RAM SER 8SOIC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CG8285AA Infineon Technologies Description: IC MEMORY F-RAM SER 8SOIC
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CG8285AAT Infineon Technologies Description: IC MEMORY F-RAM SER 8SOIC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CG8282AA Infineon Technologies Description: IC MEMORY F-RAM SER 8SOIC
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CG8282AAT Infineon Technologies Description: IC MEMORY F-RAM SER 8SOIC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CG8287AAT Infineon Technologies Description: IC MCU CAPSENSE
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CG8288AAT Infineon Technologies Description: IC MCU CAPSENSE
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CG8287AA Infineon Technologies Description: IC MCU CAPSENSE
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CG8288AA Infineon Technologies Description: IC MCU CAPSENSE
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
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AIDW12S65C5XKSA1 AIDW12S65C5XKSA1 Infineon Technologies Infineon-AIDW12S65C5-DS-v01_03-EN.pdf?fileId=5546d462675a6972016773c2fc4c568f Description: DIODE SCHOTTKY 650V 12A TO247
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IPD031N03M G IPD031N03M G Infineon Technologies IP%28D%2CS%29031N03L_%20G.pdf Description: MOSFET N-CH 30V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 15 V
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F1225R12KT4GBOSA1 F1225R12KT4GBOSA1 Infineon Technologies INFNS28255-1.pdf?t.download=true&u=5oefqw Description: IGBT MOD 1200V 25A 160W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 160 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
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BAR 88-098LRH E6327 BAR 88-098LRH E6327 Infineon Technologies bar88series.pdf Description: RF DIODE PIN 80V 250MW TSLP-4-7
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN
Diode Type: PIN - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.4pF @ 1V, 1MHz
Resistance @ If, F: 600mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 80V
Supplier Device Package: PG-TSLP-4-7
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
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IRAM538-1565A Infineon Technologies Description: POWER DRIVER MOD IPM DIP
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PX3897EDQGG005XUMA1 Infineon Technologies Description: IC REGULATOR 16VQFN
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ICA32V21X1SA1 Infineon Technologies Description: CHIP BARE DIE
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IPD65R660CFDAATMA1 IPD65R660CFDAATMA1 Infineon Technologies Infineon-IPD65R660CFDA-DS-v02_02-EN.pdf?fileId=db3a30433f764301013f7bd7d66028c6 Description: MOSFET N-CH 650V 6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 3.22A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 214.55µA
Supplier Device Package: PG-TO252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 543 pF @ 100 V
Qualification: AEC-Q101
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IPB120N06S403ATMA2 IPB120N06S403ATMA2 Infineon Technologies Infineon-I120N06S4_03-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038c634110ccc Description: MOSFET N-CH 60V 120A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13150 pF @ 25 V
Qualification: AEC-Q101
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SPD30N03S2L-20G SPD30N03S2L-20G Infineon Technologies Infineon-SPD30N03S2L-DS-v01_02-en[1].pdf?fileId=db3a30431b3e89eb011b96e752ea0e08 Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
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SPD30N03S2L-07 G SPD30N03S2L-07 G Infineon Technologies Infineon-SPD30N03S2L-DS-v01_02-en[1].pdf?fileId=db3a30431b3e89eb011b96e752ea0e08 Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 30A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 25 V
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BSO130N03MSG BSO130N03MSG Infineon Technologies INFNS16226-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11.1A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
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S25FL128SAGBHVB00 S25FL128SAGBHVB00 Infineon Technologies Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
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S79FL256SDSMFVG01 S79FL256SDSMFVG01 Infineon Technologies download Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Verified
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470+10.59 EUR
705+10.43 EUR
1175+10.24 EUR
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D740N40TXPSA1 D740N40TXPSA1 Infineon Technologies D740N.pdf Description: DIODE GEN PURP 4KV 750A
Packaging: Bulk
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 750A
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 4000 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 700 A
Current - Reverse Leakage @ Vr: 70 mA @ 4000 V
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TLE4274GV50ATMA2 TLE4274GV50ATMA2 Infineon Technologies Infineon-TLE4274-DataSheet-v01_71-EN.pdf?fileId=8ac78c8c93dda25b0194f49872dd00d1 Description: IC REG LIN 5V 400MA PG-TO263-3-1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-3-1
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
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BTS740S2XUMA1 BTS740S2XUMA1 Infineon Technologies Infineon-BTS740S2-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa390ea280fe0 Description: IC PWR SWITCH N-CHAN 1:1 DSO-20
Features: Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 27mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.9A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-20
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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BGS16GA14E6327XTSA1 BGS16GA14E6327XTSA1 Infineon Technologies Infineon-BGS16GA14-DS-v03_00-EN.pdf?fileId=5546d46254e133b401552f6be87069f8 Description: IC RF SWITCH SP6T 3.8GHZ ATSLP14
Packaging: Tape & Reel (TR)
Package / Case: 14-UFQFN Exposed Pad
Mounting Type: Surface Mount
Circuit: SP6T
RF Type: LTE, W-CDMA
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3V
Insertion Loss: 0.5dB
Frequency Range: 100MHz ~ 3.8GHz
Test Frequency: 3GHz
Isolation: 33dB
Supplier Device Package: PG-ATSLP-14-8
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TLI4971A120T5E0001XUMA1 TLI4971A120T5E0001XUMA1 Infineon Technologies Infineon-TLI4971-A120T5-E0001-DataSheet-v01_01-EN.pdf?fileId=5546d462700c0ae6017034d731621b09 Description: CURRENT SENSOR PG-TISON-8-5
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Supplier Device Package: PG-TISON-8-5
Part Status: Active
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2500+3.9 EUR
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ICE3B1565 ICE3B1565 Infineon Technologies INFNS22601-1.pdf?t.download=true&u=5oefqw Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 130°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Circuit, Over Load, Over Temperature, Over Voltage
Control Features: Soft Start
Part Status: Active
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TLE9015QUTRXBRGTOBO1 TLE9015QUTRXBRGTOBO1 Infineon Technologies Description: TLE9015QU_TRX_BRG
Packaging: Bulk
Function: Battery Monitor
Type: Power Management
Utilized IC / Part: TLE9012AQU
Supplied Contents: Board(s)
Primary Attributes: Cell Balancer
Embedded: No
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98-0086PBF Infineon Technologies Description: IC GATE DRIVER HALF BRIDGE 8SOIC
Packaging: Tube
DigiKey Programmable: Not Verified
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IRFR3711ZTRPBF IRFR3711ZTRPBF Infineon Technologies irfr3711zpbf.pdf?fileId=5546d462533600a401535631d86620d6 Description: MOSFET N-CH 20V 93A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 15A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 10 V
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IPD050N10N5ATMA1 IPD050N10N5ATMA1 Infineon Technologies Infineon-IPD050N10N5-DS-v02_01-EN.pdf?fileId=5546d4625b3ca4ec015b615bb7536713 Description: MOSFET N-CH 100V 80A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 40A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 84µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 50 V
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2500+1.42 EUR
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IPD050N10N5ATMA1 IPD050N10N5ATMA1 Infineon Technologies Infineon-IPD050N10N5-DS-v02_01-EN.pdf?fileId=5546d4625b3ca4ec015b615bb7536713 Description: MOSFET N-CH 100V 80A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 40A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 84µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 50 V
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IPA050N10NM5SXKSA1 IPA050N10NM5SXKSA1 Infineon Technologies Infineon-IPA050N10NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cfdf4f16e2d Description: MOSFET N-CH 100V 66A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 33A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 84µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 50 V
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BSP297L6327 INFNS13388-1.pdf?t.download=true&u=5oefqw
BSP297L6327
Hersteller: Infineon Technologies
Description: SMALL-SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 660mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4-21
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 357 pF @ 25 V
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BSP295L6327 description INFNS16525-1.pdf?t.download=true&u=5oefqw
BSP295L6327
Hersteller: Infineon Technologies
Description: SMALL-SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.8A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 368 pF @ 25 V
auf Bestellung 308310 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
831+0.6 EUR
Mindestbestellmenge: 831
Im Einkaufswagen  Stück im Wert von  UAH
BGF148E6327XTSA1 BGF148_Rev1.9.2_4-2-14.pdf
Hersteller: Infineon Technologies
Description: IC INTERFACE PROTECTION TSNP14-2
Produkt ist nicht verfügbar
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S6E2C29J0AGV2000A download
S6E2C29J0AGV2000A
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1.5MB FLASH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, Ethernet, I²C, LINbus, SD, SPI, UART/USART, USB
Peripherals: DMA, I²S, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Part Status: Active
Number of I/O: 152
Produkt ist nicht verfügbar
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SIDC09D60E6X1SA1 SIDC09D60E6_L4303M.pdf?folderId=db3a304412b407950112b435faf1643e&fileId=db3a304412b407950112b435fb6e643f
Hersteller: Infineon Technologies
Description: DIODE STD 600V 20A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
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SIDC09D60E6 UNSAWN fundamentals-of-power-semiconductors
Hersteller: Infineon Technologies
Description: DIODE STD 600V 20A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
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SIDC09D60E6YX1SA1 SIDC09D60E6.pdf
Hersteller: Infineon Technologies
Description: DIODE GP 600V 20A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
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SIDC09D60F6X1SA2 SIDC09D60F6_L4304M.pdf?folderId=db3a304412b407950112b435f4e8642f&fileId=db3a304412b407950112b435f5666430
Hersteller: Infineon Technologies
Description: DIODE GP 600V 30A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
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SIDC09D60F6X1SA1 SIDC09D60F6_ed2.2_3-9-10.pdf
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 600V 30A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIDC09D60F6X1SA4 SIDC09D60F6_ed2.2_3-9-10.pdf
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 600V 30A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
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SIDC09D60E6X1SA3 SIDC09D60E6.pdf
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 600V 20A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
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SIDC09D60F6X1SA5 SIDC09D60F6_ed2.2_3-9-10.pdf
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 600V 30A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R180P7ATMA1 Infineon-IPD60R180P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5bd338b83cb3
IPD60R180P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 18A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.04 EUR
Mindestbestellmenge: 2500
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IPD60R180P7ATMA1 Infineon-IPD60R180P7-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5bd338b83cb3
IPD60R180P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 18A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
auf Bestellung 3251 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.64 EUR
10+2.34 EUR
100+1.6 EUR
500+1.28 EUR
1000+1.26 EUR
Mindestbestellmenge: 5
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IPD60R180C7ATMA1 Infineon-IPD60R180C7-DS-v02_00-EN.pdf?fileId=5546d4624fb7fef2014fd622c0914c61
IPD60R180C7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 13A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.3A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 260µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
auf Bestellung 1694 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.14 EUR
10+3.09 EUR
100+2.23 EUR
500+1.76 EUR
1000+1.61 EUR
Mindestbestellmenge: 5
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TLS102B0MBBOARDTOBO1 Infineon-Z8F61701244_TLS10xB0MB_Demoboards-UserManual-v01_00-EN.pdf?fileId=5546d46262b31d2e016317dad3046601
TLS102B0MBBOARDTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLS102B0MB
Packaging: Box
Voltage - Output: 2V ~ 14V
Voltage - Input: 4V ~ 45V
Current - Output: 20mA
Regulator Type: Positive Adjustable
Board Type: Fully Populated
Utilized IC / Part: TLS102B0MB
Supplied Contents: Board(s)
Channels per IC: 1 - Single
Contents: Board(s)
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+54.07 EUR
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IRLR120NTRLPBF irlr120npbf.pdf?fileId=5546d462533600a40153566965182665
IRLR120NTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 6A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Produkt ist nicht verfügbar
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IAUZ40N10S5N130ATMA1 Infineon-IAUZ40N10S5N130-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a62b6cf0ddb
IAUZ40N10S5N130ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 40A 8TSDSON-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 27µA
Supplier Device Package: PG-TSDSON-8-33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1525 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.65 EUR
Mindestbestellmenge: 5000
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IAUZ40N10S5N130ATMA1 Infineon-IAUZ40N10S5N130-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a62b6cf0ddb
IAUZ40N10S5N130ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 40A 8TSDSON-33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 27µA
Supplier Device Package: PG-TSDSON-8-33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1525 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14562 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.6 EUR
11+1.65 EUR
100+1.11 EUR
500+0.87 EUR
1000+0.8 EUR
2000+0.79 EUR
Mindestbestellmenge: 7
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BSC040N10NS5SCATMA1 Infineon-BSC040N10NS5SC-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701712f7dd8030083
BSC040N10NS5SCATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 140A WSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 95µA
Supplier Device Package: PG-WSON-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 50 V
Produkt ist nicht verfügbar
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BSC040N10NS5SCATMA1 Infineon-BSC040N10NS5SC-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701712f7dd8030083
BSC040N10NS5SCATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 140A WSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 95µA
Supplier Device Package: PG-WSON-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 50 V
Produkt ist nicht verfügbar
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CY8CTMA120-56LTXI
CY8CTMA120-56LTXI
Hersteller: Infineon Technologies
Description: IC TRUETOUCH CAPSENSE 56VQFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I²C, SPI, UART/USART, USB
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.25V
Controller Series: CY8CT
Program Memory Type: FLASH (16kB)
Applications: Touchscreen Controller
Core Processor: M8C
Supplier Device Package: 56-QFN (8x8)
Part Status: Obsolete
DigiKey Programmable: Not Verified
auf Bestellung 2485 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+15.24 EUR
Mindestbestellmenge: 35
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S25FL064LABMFM003 Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL064LABMFM003
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 16SOIC
Produkt ist nicht verfügbar
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S25FL128LAGMFM013 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
S25FL128LAGMFM013
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 8SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CG8280AA
Hersteller: Infineon Technologies
Description: IC MEMORY F-RAM SER 8SOIC
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CG8280AAT
Hersteller: Infineon Technologies
Description: IC MEMORY F-RAM SER 8SOIC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CG8285AA
Hersteller: Infineon Technologies
Description: IC MEMORY F-RAM SER 8SOIC
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CG8285AAT
Hersteller: Infineon Technologies
Description: IC MEMORY F-RAM SER 8SOIC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CG8282AA
Hersteller: Infineon Technologies
Description: IC MEMORY F-RAM SER 8SOIC
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CG8282AAT
Hersteller: Infineon Technologies
Description: IC MEMORY F-RAM SER 8SOIC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CG8287AAT
Hersteller: Infineon Technologies
Description: IC MCU CAPSENSE
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CG8288AAT
Hersteller: Infineon Technologies
Description: IC MCU CAPSENSE
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CG8287AA
Hersteller: Infineon Technologies
Description: IC MCU CAPSENSE
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CG8288AA
Hersteller: Infineon Technologies
Description: IC MCU CAPSENSE
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AIDW12S65C5XKSA1 Infineon-AIDW12S65C5-DS-v01_03-EN.pdf?fileId=5546d462675a6972016773c2fc4c568f
AIDW12S65C5XKSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 650V 12A TO247
Produkt ist nicht verfügbar
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IPD031N03M G IP%28D%2CS%29031N03L_%20G.pdf
IPD031N03M G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 15 V
Produkt ist nicht verfügbar
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F1225R12KT4GBOSA1 INFNS28255-1.pdf?t.download=true&u=5oefqw
F1225R12KT4GBOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 25A 160W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 160 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+159.39 EUR
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BAR 88-098LRH E6327 bar88series.pdf
BAR 88-098LRH E6327
Hersteller: Infineon Technologies
Description: RF DIODE PIN 80V 250MW TSLP-4-7
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN
Diode Type: PIN - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.4pF @ 1V, 1MHz
Resistance @ If, F: 600mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 80V
Supplier Device Package: PG-TSLP-4-7
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Produkt ist nicht verfügbar
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IRAM538-1565A
Hersteller: Infineon Technologies
Description: POWER DRIVER MOD IPM DIP
Produkt ist nicht verfügbar
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PX3897EDQGG005XUMA1
Hersteller: Infineon Technologies
Description: IC REGULATOR 16VQFN
Produkt ist nicht verfügbar
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ICA32V21X1SA1
Hersteller: Infineon Technologies
Description: CHIP BARE DIE
Produkt ist nicht verfügbar
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IPD65R660CFDAATMA1 Infineon-IPD65R660CFDA-DS-v02_02-EN.pdf?fileId=db3a30433f764301013f7bd7d66028c6
IPD65R660CFDAATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 3.22A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 214.55µA
Supplier Device Package: PG-TO252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 543 pF @ 100 V
Qualification: AEC-Q101
auf Bestellung 4093 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.41 EUR
10+2.18 EUR
100+1.49 EUR
500+1.19 EUR
1000+1.15 EUR
Mindestbestellmenge: 6
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IPB120N06S403ATMA2 Infineon-I120N06S4_03-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038c634110ccc
IPB120N06S403ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13150 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SPD30N03S2L-20G Infineon-SPD30N03S2L-DS-v01_02-en[1].pdf?fileId=db3a30431b3e89eb011b96e752ea0e08
SPD30N03S2L-20G
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 8367 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
989+0.5 EUR
Mindestbestellmenge: 989
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SPD30N03S2L-07 G Infineon-SPD30N03S2L-DS-v01_02-en[1].pdf?fileId=db3a30431b3e89eb011b96e752ea0e08
SPD30N03S2L-07 G
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 30A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 25 V
auf Bestellung 1757 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
533+0.93 EUR
Mindestbestellmenge: 533
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BSO130N03MSG INFNS16226-1.pdf?t.download=true&u=5oefqw
BSO130N03MSG
Hersteller: Infineon Technologies
Description: SMALL SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11.1A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
Produkt ist nicht verfügbar
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S25FL128SAGBHVB00 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL128SAGBHVB00
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
auf Bestellung 507 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.6 EUR
10+6.75 EUR
25+6.44 EUR
40+6.29 EUR
80+6.06 EUR
338+5.63 EUR
Mindestbestellmenge: 3
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S79FL256SDSMFVG01 download
S79FL256SDSMFVG01
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Verified
auf Bestellung 2117 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.02 EUR
10+12.12 EUR
25+11.75 EUR
50+11.48 EUR
235+10.86 EUR
470+10.59 EUR
705+10.43 EUR
1175+10.24 EUR
Mindestbestellmenge: 2
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D740N40TXPSA1 D740N.pdf
D740N40TXPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 4KV 750A
Packaging: Bulk
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 750A
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 4000 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 700 A
Current - Reverse Leakage @ Vr: 70 mA @ 4000 V
Produkt ist nicht verfügbar
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TLE4274GV50ATMA2 Infineon-TLE4274-DataSheet-v01_71-EN.pdf?fileId=8ac78c8c93dda25b0194f49872dd00d1
TLE4274GV50ATMA2
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 400MA PG-TO263-3-1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-3-1
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BTS740S2XUMA1 Infineon-BTS740S2-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa390ea280fe0
BTS740S2XUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-20
Features: Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 27mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.9A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-20
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+5.84 EUR
2000+5.72 EUR
Mindestbestellmenge: 1000
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BGS16GA14E6327XTSA1 Infineon-BGS16GA14-DS-v03_00-EN.pdf?fileId=5546d46254e133b401552f6be87069f8
BGS16GA14E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SP6T 3.8GHZ ATSLP14
Packaging: Tape & Reel (TR)
Package / Case: 14-UFQFN Exposed Pad
Mounting Type: Surface Mount
Circuit: SP6T
RF Type: LTE, W-CDMA
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3V
Insertion Loss: 0.5dB
Frequency Range: 100MHz ~ 3.8GHz
Test Frequency: 3GHz
Isolation: 33dB
Supplier Device Package: PG-ATSLP-14-8
Produkt ist nicht verfügbar
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TLI4971A120T5E0001XUMA1 Infineon-TLI4971-A120T5-E0001-DataSheet-v01_01-EN.pdf?fileId=5546d462700c0ae6017034d731621b09
TLI4971A120T5E0001XUMA1
Hersteller: Infineon Technologies
Description: CURRENT SENSOR PG-TISON-8-5
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Supplier Device Package: PG-TISON-8-5
Part Status: Active
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+3.9 EUR
Mindestbestellmenge: 2500
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ICE3B1565 INFNS22601-1.pdf?t.download=true&u=5oefqw
ICE3B1565
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 130°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Circuit, Over Load, Over Temperature, Over Voltage
Control Features: Soft Start
Part Status: Active
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
212+2.09 EUR
Mindestbestellmenge: 212
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TLE9015QUTRXBRGTOBO1
TLE9015QUTRXBRGTOBO1
Hersteller: Infineon Technologies
Description: TLE9015QU_TRX_BRG
Packaging: Bulk
Function: Battery Monitor
Type: Power Management
Utilized IC / Part: TLE9012AQU
Supplied Contents: Board(s)
Primary Attributes: Cell Balancer
Embedded: No
Produkt ist nicht verfügbar
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98-0086PBF
Hersteller: Infineon Technologies
Description: IC GATE DRIVER HALF BRIDGE 8SOIC
Packaging: Tube
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRFR3711ZTRPBF irfr3711zpbf.pdf?fileId=5546d462533600a401535631d86620d6
IRFR3711ZTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 93A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 15A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 10 V
auf Bestellung 11072 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.02 EUR
11+1.65 EUR
100+1.28 EUR
500+1.09 EUR
1000+0.89 EUR
Mindestbestellmenge: 9
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IPD050N10N5ATMA1 Infineon-IPD050N10N5-DS-v02_01-EN.pdf?fileId=5546d4625b3ca4ec015b615bb7536713
IPD050N10N5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 80A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 40A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 84µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 50 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.42 EUR
Mindestbestellmenge: 2500
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IPD050N10N5ATMA1 Infineon-IPD050N10N5-DS-v02_01-EN.pdf?fileId=5546d4625b3ca4ec015b615bb7536713
IPD050N10N5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 80A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 40A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 84µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 50 V
auf Bestellung 6416 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.26 EUR
10+2.95 EUR
100+2.04 EUR
500+1.71 EUR
Mindestbestellmenge: 5
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IPA050N10NM5SXKSA1 Infineon-IPA050N10NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cfdf4f16e2d
IPA050N10NM5SXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 66A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 33A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 84µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 50 V
auf Bestellung 530 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.46 EUR
50+2.74 EUR
100+2.47 EUR
500+2.01 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
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