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2ED21834S06JXUMA1 2ED21834S06JXUMA1 Infineon Technologies Infineon-2ED2183-4-S06F-J-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016cb8d765b229f7 Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-14-49
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
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10+2.38 EUR
25+2.17 EUR
100+1.94 EUR
250+1.83 EUR
500+1.76 EUR
1000+1.71 EUR
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2ED2184S06FXUMA1 2ED2184S06FXUMA1 Infineon Technologies infineon-2ed2184-4-s06f-j-datasheet-en.pdf Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-69
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2ED2184S06FXUMA1 2ED2184S06FXUMA1 Infineon Technologies infineon-2ed2184-4-s06f-j-datasheet-en.pdf Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-69
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2ED21844S06JXUMA1 2ED21844S06JXUMA1 Infineon Technologies infineon-2ed2184-4-s06f-j-datasheet-en.pdf Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-14-49
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
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2ED21844S06JXUMA1 2ED21844S06JXUMA1 Infineon Technologies infineon-2ed2184-4-s06f-j-datasheet-en.pdf Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-14-49
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
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10+2.51 EUR
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100+2.05 EUR
250+1.93 EUR
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BSP321PH6327XTSA1 BSP321PH6327XTSA1 Infineon Technologies Infineon-BSP321P-DS-v01_06-en.pdf?fileId=db3a30433b47825b013b605d0e215a39 Description: MOSFET P-CH 100V 980MA SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 4V @ 380µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 980mA, 10V
Current - Continuous Drain (Id) @ 25°C: 980mA (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSO130N03MSGXUMA1 BSO130N03MSGXUMA1 Infineon Technologies BSO130N03MS_G.pdf Description: MOSFET N-CH 30V 9A 8DSO
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BFR340FH6327 BFR340FH6327 Infineon Technologies INFNS14910-1.pdf?t.download=true&u=5oefqw Description: LOW-NOISE TRANSISTOR
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Bulk
Part Status: Active
Supplier Device Package: PG-TSFP-3-1
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 100MHz ~ 2.4GHz
Frequency - Transition: 14GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 3V
Voltage - Collector Emitter Breakdown (Max): 9V
Current - Collector (Ic) (Max): 20mA
Power - Max: 75mW
Gain: 28dB
Operating Temperature: 150°C (TJ)
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BFR 340T E6327 BFR 340T E6327 Infineon Technologies BFR340T.pdf Description: RF TRANS NPN 9V 14GHZ PG-SC75-3D
Frequency - Transition: 14GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 3V
Voltage - Collector Emitter Breakdown (Max): 9V
Current - Collector (Ic) (Max): 10mA
Power - Max: 60mW
Gain: 15dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Supplier Device Package: PG-SC75-3D
Noise Figure (dB Typ @ f): 1.15dB @ 1.8GHz
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STL81005Z Infineon Technologies stl81004-5x_020101.pdf?t.download=true&u=5oefqw Description: LOW POWER 1550 NM FP LASER
Packaging: Bulk
Part Status: Active
Voltage - Input: 1.5V
Current Rating (Amps): 120mA
Wavelength: 1550nm
Package / Case: Module
Power (Watts): 50mW
Produkt ist nicht verfügbar
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CY22381SXI-174 CY22381SXI-174 Infineon Technologies cy22381_8.pdf Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS
Type: Clock Generator, Fanout Distribution
Input: LVTTL, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:3
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 3
DigiKey Programmable: Not Verified
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CY22381SXI-211 CY22381SXI-211 Infineon Technologies cy22381_8.pdf Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS
Type: Clock Generator, Fanout Distribution
Input: LVTTL, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:3
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 3
DigiKey Programmable: Not Verified
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CY22381SXI-146 CY22381SXI-146 Infineon Technologies cy22381_8.pdf Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS
Type: Clock Generator, Fanout Distribution
Input: LVTTL, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:3
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 3
DigiKey Programmable: Not Verified
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CY22381SXI-174T CY22381SXI-174T Infineon Technologies cy22381_8.pdf Description: IC CLOCK GENERATOR 8SOIC
DigiKey Programmable: Not Verified
Number of Circuits: 3
Divider/Multiplier: Yes/No
PLL: Yes with Bypass
Supplier Device Package: 8-SOIC
Differential - Input:Output: No/No
Ratio - Input:Output: 1:3
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: -40°C ~ 85°C (TA)
Input: LVTTL, Crystal
Type: Clock Generator, Fanout Distribution
Output: CMOS
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
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BB 545 E7908 BB 545 E7908 Infineon Technologies bb545series_bb565series.pdf Description: DIODE VAR CAP 30V 20MA SOD-323
Produkt ist nicht verfügbar
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2ED2304S06FXUMA1 2ED2304S06FXUMA1 Infineon Technologies Infineon-2ED2304S06F-DataSheet-v02_09-EN.pdf?fileId=5546d46264a8de7e0164d5356ddb3158 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 17.5V
Input Type: CMOS
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-910
Rise / Fall Time (Typ): 48ns, 24ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 360mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2ED2304S06FXUMA1 2ED2304S06FXUMA1 Infineon Technologies Infineon-2ED2304S06F-DataSheet-v02_09-EN.pdf?fileId=5546d46264a8de7e0164d5356ddb3158 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 17.5V
Input Type: CMOS
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-910
Rise / Fall Time (Typ): 48ns, 24ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 360mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2ED2304S06FXLLA1 2ED2304S06FXLLA1 Infineon Technologies Infineon-2ED2304S06F-DataSheet-v02_05-EN.pdf?fileId=5546d46264a8de7e0164d5356ddb3158 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 17.5V
Input Type: CMOS
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-910
Rise / Fall Time (Typ): 48ns, 24ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 360mA, 700mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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A2C00042866 A Infineon Technologies Description: IC GATE NOR
DigiKey Programmable: Not Verified
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar
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IKCM30F60HAXKMA1 IKCM30F60HAXKMA1 Infineon Technologies IKCM30F60HA.pdf Description: IFPS MODULES 24MDIP
Voltage: 600 V
Current: 30 A
Part Status: Obsolete
Voltage - Isolation: 2000Vrms
Configuration: 3 Phase
Type: IGBT
Mounting Type: Through Hole
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Packaging: Bulk
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TLE4270 TLE4270 Infineon Technologies Infineon-TLE4270-2-DS-v01_80-EN.pdf?fileId=5546d46259d9a4bf0159f97a40b63e6a Description: IC REG LINEAR FIXED LDO REG
Packaging: Bulk
Produkt ist nicht verfügbar
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TLE4270-2S TLE4270-2S Infineon Technologies INFNS12041-1.pdf?t.download=true&u=5oefqw Description: IC REG LINEAR FIXED LDO REG
Current - Supply (Max): 90 mA
Protection Features: Antisaturation, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.7V @ 550mA
PSRR: 54dB (100Hz)
Part Status: Active
Control Features: Delay, Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TO220-5-11
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 1.5 mA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 650mA
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-220-5 Formed Leads
Packaging: Bulk
Produkt ist nicht verfügbar
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TLE4270G TLE4270G Infineon Technologies Infineon-TLE4270-2-DS-v01_80-EN.pdf?fileId=5546d46259d9a4bf0159f97a40b63e6a Description: IC REG LINEAR FIXED LDO REG
Supplier Device Package: PG-TO263-5-1
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 1.5 mA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 650mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
Packaging: Bulk
Current - Supply (Max): 90 mA
Protection Features: Antisaturation, Over Current, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.7V @ 550mA
PSRR: 54dB (100Hz)
Control Features: Reset
Voltage - Output (Min/Fixed): 5V
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TLE4270SNKSAL Infineon Technologies Description: IC REG LINEAR FIXED LDO REG
Packaging: Bulk
Produkt ist nicht verfügbar
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PTMA180152M V1 PTMA180152M V1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC AMP GSM 1.8GHZ-2GHZ DSO20-63
Supplier Device Package: PG-DSO-20-63
Gain: 30dB
RF Type: GSM, EDGE
Frequency: 1.8GHz ~ 2GHz
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BAS7004E6433HTMA1 BAS7004E6433HTMA1 Infineon Technologies INFNS30154-1.pdf?t.download=true&u=5oefqw Description: DIODE ARRAY SCHOT 70V 70MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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2000+0.14 EUR
5000+0.12 EUR
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TLE4274DV50ATMA2 TLE4274DV50ATMA2 Infineon Technologies Infineon-TLE4274-DataSheet-v01_71-EN.pdf?fileId=8ac78c8c93dda25b0194f49872dd00d1 Description: IC REG LIN 5V 400MA TO252-3-11
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3-11
Voltage - Output (Min/Fixed): 5V
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE4274DV50ATMA2 TLE4274DV50ATMA2 Infineon Technologies Infineon-TLE4274-DataSheet-v01_71-EN.pdf?fileId=8ac78c8c93dda25b0194f49872dd00d1 Description: IC REG LIN 5V 400MA TO252-3-11
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3-11
Voltage - Output (Min/Fixed): 5V
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Grade: Automotive
Qualification: AEC-Q100
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8+2.25 EUR
11+1.65 EUR
25+1.49 EUR
100+1.33 EUR
250+1.25 EUR
500+1.2 EUR
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CY7C4211V-15AXI CY7C4211V-15AXI Infineon Technologies CY7C42x1V_Rev2015.pdf Description: IC FIFO SYNC 512X9 10NS 32TQFP
DigiKey Programmable: Not Verified
Voltage - Supply: 3 V ~ 3.6 V
FWFT Support: No
Retransmit Capability: Yes
Programmable Flags Support: No
Expansion Type: Depth, Width
Bus Directional: Uni-Directional
Supplier Device Package: 32-TQFP (7x7)
Access Time: 10ns
Data Rate: 66.7MHz
Operating Temperature: -40°C ~ 85°C
Memory Size: 4.5K (512 x 9)
Function: Synchronous
Mounting Type: Surface Mount
Package / Case: 32-TQFP
Packaging: Tray
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TLE9271QXV33XUMA1 TLE9271QXV33XUMA1 Infineon Technologies Infineon-TLE9271QX%20V33-DS-v01_03-EN.pdf?fileId=5546d46268554f4a0168854f82cf6859 Description: IC REG 4OUT VQFN-48-31
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CY14MB256J1-SXI CY14MB256J1-SXI Infineon Technologies ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC NVSRAM 256KBIT I2C 8SOIC
DigiKey Programmable: Not Verified
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Memory Organization: 32K x 8
Memory Interface: I2C
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Memory Format: NVSRAM
Clock Frequency: 3.4 MHz
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
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TC366DP64F300SAAKXUMA1 TC366DP64F300SAAKXUMA1 Infineon Technologies 4_cip10527.pdf Description: IC MCU 32BIT 4MB FLASH 180LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 180-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 672K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: DMA, I2S, PWM, WDT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-180-1
Part Status: Active
DigiKey Programmable: Not Verified
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TC366DP64F300SAALXUMA1 TC366DP64F300SAALXUMA1 Infineon Technologies Infineon-TriCore_Family_BR-ProductBrochure-v01_00-EN.pdf?fileId=5546d4625d5945ed015dc81f47b436c7 Description: IC MCU 32BIT 4MB FLASH 180LFBGA
DigiKey Programmable: Not Verified
Supplier Device Package: PG-LFBGA-180-1
Peripherals: DMA, I2S, PWM, WDT
Connectivity: DMA, I2S, PWM, WDT
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Core Size: 32-Bit Dual-Core
Core Processor: TriCore™
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 150°C (TA)
RAM Size: 672K x 8
Program Memory Size: 4MB (4M x 8)
Speed: 300MHz
Mounting Type: Surface Mount
Package / Case: 180-LFBGA
Packaging: Tape & Reel (TR)
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BAT62-02WH6327 BAT62-02WH6327 Infineon Technologies Description: MIXER DIODE, LOW BARRIER
Power Dissipation (Max): 100 mW
Current - Max: 20 mA
Supplier Device Package: SCD-80
Voltage - Peak Reverse (Max): 40V
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: Schottky - Single
Package / Case: SC-80
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar
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BAT62-02LSE6327 BAT62-02LSE6327 Infineon Technologies INFNS15703-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTTKY 40V 100MW TSSLP-2
Packaging: Bulk
Package / Case: 0201 (0603 Metric)
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-TSSLP-2-1
Part Status: Active
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
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BAT62-02WE6327 BAT62-02WE6327 Infineon Technologies Description: MIXER DIODE, LOW BARRIER
Power Dissipation (Max): 100 mW
Current - Max: 20 mA
Supplier Device Package: PG-SOD323-2
Voltage - Peak Reverse (Max): 40V
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: Schottky - Single
Package / Case: SC-76, SOD-323
Part Status: Active
Packaging: Bulk
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BAT62E6327 BAT62E6327 Infineon Technologies INFNS15703-1.pdf?t.download=true&u=5oefqw Description: MIXER DIODE, LOW BARRIER
Power Dissipation (Max): 100 mW
Current - Max: 20 mA
Part Status: Active
Supplier Device Package: SOT-143-4
Voltage - Peak Reverse (Max): 40V
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: Schottky - Anti-Parallel
Package / Case: TO-253-4, TO-253AA
Packaging: Bulk
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BAT62E6327HTSA1 BAT62E6327HTSA1 Infineon Technologies Infineon-BAT62-DataSheet-v01_00-EN.pdf?fileId=5546d4627a0b0c7b017a1997a91e3eb2 Description: DIODE SCHOTTKY 40V 100MW SOT143
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
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BAT6202LE6327XTMA1 BAT6202LE6327XTMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: DIODE SCHOTTKY 40V 100MW TSLP21
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-TSLP-2-1
Part Status: Discontinued at Digi-Key
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
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BAT6207L4E6327XT BAT6207L4E6327XT Infineon Technologies fundamentals-of-power-semiconductors Description: DIODE SCHOTTKY 40V 100MW TSLP-4
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: TSLP-4-4
Part Status: Discontinued at Digi-Key
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
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BAT6207L4E6433XTMA1 BAT6207L4E6433XTMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: DIODE SCHOTTKY 40V 100MW TSLP-4
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: TSLP-4-4
Part Status: Obsolete
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
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BAT6207WE6327HTSA1 BAT6207WE6327HTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: DIODE SCHOTTKY 40V 100MW SOT343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-SOT343-4-1
Part Status: Obsolete
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
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BAT 62-09S E6327 BAT 62-09S E6327 Infineon Technologies fundamentals-of-power-semiconductors Description: DIODE SCHOTTKY 40V 100MW SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-SOT363-PO
Part Status: Discontinued at Digi-Key
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
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BAT 62-02W E6327 BAT 62-02W E6327 Infineon Technologies bat62series.pdf Description: DIODE SCHOTTKY 40V 100MW SCD80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: SCD-80
Part Status: Obsolete
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
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BAT6202LSE6327XTSA1 BAT6202LSE6327XTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: DIODE SCHOTTKY 40V 100MW TSSLP-2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-TSSLP-2-1
Part Status: Obsolete
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
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BAT6202WH6327XTSA1 BAT6202WH6327XTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: DIODE SCHOTTKY 40V 100MW SCD80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: SCD-80
Part Status: Obsolete
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
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BAT6203WE6327HTSA1 BAT6203WE6327HTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: DIODE SCHOTTKY 40V 100MW SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-SOD323-3D
Part Status: Obsolete
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
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BAT6207WH6327XTSA1 BAT6207WH6327XTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: DIODE SCHOTTKY 40V 100MW SOT343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-SOT343-4-1
Part Status: Obsolete
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
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BTS740S2XUMA1 BTS740S2XUMA1 Infineon Technologies Infineon-BTS740S2-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa390ea280fe0 Description: IC PWR SWITCH N-CHAN 1:1 DSO-20
Features: Status Flag
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 27mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.9A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-20
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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BTS740S2NT BTS740S2NT Infineon Technologies Description: IC PWR SWITCH N-CHAN 1:1 DSO-20
Features: Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 27mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.9A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-20-31
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Obsolete
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TLE4274GV852ATMA1 TLE4274GV852ATMA1 Infineon Technologies Infineon-TLE4274-DS-v01_70-EN.pdf?fileId=5546d46258fc0bc101595f8e637f1f8f Description: IC REG LIN 8.5V 400MA TO263-3-1
Packaging: Bulk
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-3-1
Voltage - Output (Min/Fixed): 8.5V
Grade: Automotive
Part Status: Obsolete
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
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CY7C0852AV-133BBC CY7C0852AV-133BBC Infineon Technologies CY7C0850-853AV.pdf Description: IC SRAM 4.5MBIT PAR 172FBGA
Packaging: Tray
Package / Case: 172-LBGA
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Technology: SRAM - Dual Port, Synchronous
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 172-FBGA (15x15)
Memory Interface: Parallel
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
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S29GL01GT11TFIV10 S29GL01GT11TFIV10 Infineon Technologies infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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S29GL01GT11FHIV20 S29GL01GT11FHIV20 Infineon Technologies infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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T2810N54P270HOSA1 Infineon Technologies Description: MOD DIODE THYRISTOR
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IPB120N06S402ATMA2 IPB120N06S402ATMA2 Infineon Technologies Infineon-I120N06S4_02-DS-v01_02-en.pdf?fileId=db3a30431ff9881501203890b6410cb8 Description: MOSFET N-CH 60V 120A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPB120N06S402ATMA2 IPB120N06S402ATMA2 Infineon Technologies Infineon-I120N06S4_02-DS-v01_02-en.pdf?fileId=db3a30431ff9881501203890b6410cb8 Description: MOSFET N-CH 60V 120A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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EVALAHNBIM69D130V01TOBO1 EVALAHNBIM69D130V01TOBO1 Infineon Technologies infineon-ug095149-audiohub-nano-digital-xensiv-mems-microphones-evaluation-board-usermanual-en.pdf Description: EVAL BOARD FOR IM69D130
Packaging: Box
Function: Microphone
Type: Audio
Utilized IC / Part: IM69D130
Supplied Contents: Board(s)
Contents: Board(s)
Secondary Attributes: Graphical User Interface (GUI)
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IPD50N04S308ATMA1-INF Infineon Technologies Description: OPTLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 50A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Produkt ist nicht verfügbar
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PEF81913FV1.4 PEF81913FV1.4 Infineon Technologies Description: Q-SMINTIX SECOND GEN
Packaging: Bulk
auf Bestellung 98 Stücke:
Lieferzeit 10-14 Tag (e)
18+27.09 EUR
Mindestbestellmenge: 18 Stücke
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2ED21834S06JXUMA1 Infineon-2ED2183-4-S06F-J-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016cb8d765b229f7
2ED21834S06JXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-14-49
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
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Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+3.22 EUR
10+2.38 EUR
25+2.17 EUR
100+1.94 EUR
250+1.83 EUR
500+1.76 EUR
1000+1.71 EUR
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2ED2184S06FXUMA1 infineon-2ed2184-4-s06f-j-datasheet-en.pdf
2ED2184S06FXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-69
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2ED2184S06FXUMA1 infineon-2ed2184-4-s06f-j-datasheet-en.pdf
2ED2184S06FXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-69
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2ED21844S06JXUMA1 infineon-2ed2184-4-s06f-j-datasheet-en.pdf
2ED21844S06JXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-14-49
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 5000 Stücke:
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AnzahlPreis
2500+1.75 EUR
5000+1.71 EUR
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2ED21844S06JXUMA1 infineon-2ed2184-4-s06f-j-datasheet-en.pdf
2ED21844S06JXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-14-49
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 6460 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+3.4 EUR
10+2.51 EUR
25+2.29 EUR
100+2.05 EUR
250+1.93 EUR
500+1.87 EUR
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BSP321PH6327XTSA1 Infineon-BSP321P-DS-v01_06-en.pdf?fileId=db3a30433b47825b013b605d0e215a39
BSP321PH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 100V 980MA SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 4V @ 380µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 980mA, 10V
Current - Continuous Drain (Id) @ 25°C: 980mA (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSO130N03MSGXUMA1 BSO130N03MS_G.pdf
BSO130N03MSGXUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 9A 8DSO
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BFR340FH6327 INFNS14910-1.pdf?t.download=true&u=5oefqw
BFR340FH6327
Hersteller: Infineon Technologies
Description: LOW-NOISE TRANSISTOR
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Bulk
Part Status: Active
Supplier Device Package: PG-TSFP-3-1
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 100MHz ~ 2.4GHz
Frequency - Transition: 14GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 3V
Voltage - Collector Emitter Breakdown (Max): 9V
Current - Collector (Ic) (Max): 20mA
Power - Max: 75mW
Gain: 28dB
Operating Temperature: 150°C (TJ)
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3418+0.14 EUR
Mindestbestellmenge: 3418 Stücke
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BFR 340T E6327 BFR340T.pdf
BFR 340T E6327
Hersteller: Infineon Technologies
Description: RF TRANS NPN 9V 14GHZ PG-SC75-3D
Frequency - Transition: 14GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 3V
Voltage - Collector Emitter Breakdown (Max): 9V
Current - Collector (Ic) (Max): 10mA
Power - Max: 60mW
Gain: 15dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Supplier Device Package: PG-SC75-3D
Noise Figure (dB Typ @ f): 1.15dB @ 1.8GHz
Produkt ist nicht verfügbar
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STL81005Z stl81004-5x_020101.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: LOW POWER 1550 NM FP LASER
Packaging: Bulk
Part Status: Active
Voltage - Input: 1.5V
Current Rating (Amps): 120mA
Wavelength: 1550nm
Package / Case: Module
Power (Watts): 50mW
Produkt ist nicht verfügbar
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CY22381SXI-174 cy22381_8.pdf
CY22381SXI-174
Hersteller: Infineon Technologies
Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS
Type: Clock Generator, Fanout Distribution
Input: LVTTL, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:3
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 3
DigiKey Programmable: Not Verified
auf Bestellung 11222 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
110+4.53 EUR
Mindestbestellmenge: 110 Stücke
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CY22381SXI-211 cy22381_8.pdf
CY22381SXI-211
Hersteller: Infineon Technologies
Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS
Type: Clock Generator, Fanout Distribution
Input: LVTTL, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:3
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 3
DigiKey Programmable: Not Verified
auf Bestellung 7410 Stücke:
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AnzahlPreis
110+4.53 EUR
Mindestbestellmenge: 110 Stücke
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CY22381SXI-146 cy22381_8.pdf
CY22381SXI-146
Hersteller: Infineon Technologies
Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS
Type: Clock Generator, Fanout Distribution
Input: LVTTL, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:3
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 3
DigiKey Programmable: Not Verified
auf Bestellung 4453 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
110+4.53 EUR
Mindestbestellmenge: 110 Stücke
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CY22381SXI-174T cy22381_8.pdf
CY22381SXI-174T
Hersteller: Infineon Technologies
Description: IC CLOCK GENERATOR 8SOIC
DigiKey Programmable: Not Verified
Number of Circuits: 3
Divider/Multiplier: Yes/No
PLL: Yes with Bypass
Supplier Device Package: 8-SOIC
Differential - Input:Output: No/No
Ratio - Input:Output: 1:3
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: -40°C ~ 85°C (TA)
Input: LVTTL, Crystal
Type: Clock Generator, Fanout Distribution
Output: CMOS
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
107+4.65 EUR
Mindestbestellmenge: 107 Stücke
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BB 545 E7908 bb545series_bb565series.pdf
BB 545 E7908
Hersteller: Infineon Technologies
Description: DIODE VAR CAP 30V 20MA SOD-323
Produkt ist nicht verfügbar
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2ED2304S06FXUMA1 Infineon-2ED2304S06F-DataSheet-v02_09-EN.pdf?fileId=5546d46264a8de7e0164d5356ddb3158
2ED2304S06FXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 17.5V
Input Type: CMOS
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-910
Rise / Fall Time (Typ): 48ns, 24ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 360mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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2ED2304S06FXUMA1 Infineon-2ED2304S06F-DataSheet-v02_09-EN.pdf?fileId=5546d46264a8de7e0164d5356ddb3158
2ED2304S06FXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 17.5V
Input Type: CMOS
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-910
Rise / Fall Time (Typ): 48ns, 24ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 360mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2ED2304S06FXLLA1 Infineon-2ED2304S06F-DataSheet-v02_05-EN.pdf?fileId=5546d46264a8de7e0164d5356ddb3158
2ED2304S06FXLLA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 17.5V
Input Type: CMOS
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-910
Rise / Fall Time (Typ): 48ns, 24ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 360mA, 700mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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A2C00042866 A
Hersteller: Infineon Technologies
Description: IC GATE NOR
DigiKey Programmable: Not Verified
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar
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IKCM30F60HAXKMA1 IKCM30F60HA.pdf
IKCM30F60HAXKMA1
Hersteller: Infineon Technologies
Description: IFPS MODULES 24MDIP
Voltage: 600 V
Current: 30 A
Part Status: Obsolete
Voltage - Isolation: 2000Vrms
Configuration: 3 Phase
Type: IGBT
Mounting Type: Through Hole
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Packaging: Bulk
auf Bestellung 1672 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
34+14 EUR
Mindestbestellmenge: 34 Stücke
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TLE4270 Infineon-TLE4270-2-DS-v01_80-EN.pdf?fileId=5546d46259d9a4bf0159f97a40b63e6a
TLE4270
Hersteller: Infineon Technologies
Description: IC REG LINEAR FIXED LDO REG
Packaging: Bulk
Produkt ist nicht verfügbar
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TLE4270-2S INFNS12041-1.pdf?t.download=true&u=5oefqw
TLE4270-2S
Hersteller: Infineon Technologies
Description: IC REG LINEAR FIXED LDO REG
Current - Supply (Max): 90 mA
Protection Features: Antisaturation, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.7V @ 550mA
PSRR: 54dB (100Hz)
Part Status: Active
Control Features: Delay, Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TO220-5-11
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 1.5 mA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 650mA
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-220-5 Formed Leads
Packaging: Bulk
Produkt ist nicht verfügbar
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TLE4270G Infineon-TLE4270-2-DS-v01_80-EN.pdf?fileId=5546d46259d9a4bf0159f97a40b63e6a
TLE4270G
Hersteller: Infineon Technologies
Description: IC REG LINEAR FIXED LDO REG
Supplier Device Package: PG-TO263-5-1
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 1.5 mA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 650mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
Packaging: Bulk
Current - Supply (Max): 90 mA
Protection Features: Antisaturation, Over Current, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.7V @ 550mA
PSRR: 54dB (100Hz)
Control Features: Reset
Voltage - Output (Min/Fixed): 5V
Produkt ist nicht verfügbar
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TLE4270SNKSAL
Hersteller: Infineon Technologies
Description: IC REG LINEAR FIXED LDO REG
Packaging: Bulk
Produkt ist nicht verfügbar
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PTMA180152M V1 fundamentals-of-power-semiconductors
PTMA180152M V1
Hersteller: Infineon Technologies
Description: IC AMP GSM 1.8GHZ-2GHZ DSO20-63
Supplier Device Package: PG-DSO-20-63
Gain: 30dB
RF Type: GSM, EDGE
Frequency: 1.8GHz ~ 2GHz
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BAS7004E6433HTMA1 INFNS30154-1.pdf?t.download=true&u=5oefqw
BAS7004E6433HTMA1
Hersteller: Infineon Technologies
Description: DIODE ARRAY SCHOT 70V 70MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
auf Bestellung 28839 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
28+0.63 EUR
46+0.39 EUR
100+0.24 EUR
500+0.18 EUR
1000+0.16 EUR
2000+0.14 EUR
5000+0.12 EUR
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TLE4274DV50ATMA2 Infineon-TLE4274-DataSheet-v01_71-EN.pdf?fileId=8ac78c8c93dda25b0194f49872dd00d1
TLE4274DV50ATMA2
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 400MA TO252-3-11
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3-11
Voltage - Output (Min/Fixed): 5V
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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TLE4274DV50ATMA2 Infineon-TLE4274-DataSheet-v01_71-EN.pdf?fileId=8ac78c8c93dda25b0194f49872dd00d1
TLE4274DV50ATMA2
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 400MA TO252-3-11
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3-11
Voltage - Output (Min/Fixed): 5V
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1650 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8+2.25 EUR
11+1.65 EUR
25+1.49 EUR
100+1.33 EUR
250+1.25 EUR
500+1.2 EUR
1000+1.18 EUR
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CY7C4211V-15AXI CY7C42x1V_Rev2015.pdf
CY7C4211V-15AXI
Hersteller: Infineon Technologies
Description: IC FIFO SYNC 512X9 10NS 32TQFP
DigiKey Programmable: Not Verified
Voltage - Supply: 3 V ~ 3.6 V
FWFT Support: No
Retransmit Capability: Yes
Programmable Flags Support: No
Expansion Type: Depth, Width
Bus Directional: Uni-Directional
Supplier Device Package: 32-TQFP (7x7)
Access Time: 10ns
Data Rate: 66.7MHz
Operating Temperature: -40°C ~ 85°C
Memory Size: 4.5K (512 x 9)
Function: Synchronous
Mounting Type: Surface Mount
Package / Case: 32-TQFP
Packaging: Tray
auf Bestellung 627 Stücke:
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AnzahlPreis
22+23.79 EUR
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TLE9271QXV33XUMA1 Infineon-TLE9271QX%20V33-DS-v01_03-EN.pdf?fileId=5546d46268554f4a0168854f82cf6859
TLE9271QXV33XUMA1
Hersteller: Infineon Technologies
Description: IC REG 4OUT VQFN-48-31
Produkt ist nicht verfügbar
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CY14MB256J1-SXI ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY14MB256J1-SXI
Hersteller: Infineon Technologies
Description: IC NVSRAM 256KBIT I2C 8SOIC
DigiKey Programmable: Not Verified
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Memory Organization: 32K x 8
Memory Interface: I2C
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Memory Format: NVSRAM
Clock Frequency: 3.4 MHz
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
auf Bestellung 4015 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
55+8.91 EUR
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TC366DP64F300SAAKXUMA1 4_cip10527.pdf
TC366DP64F300SAAKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 180LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 180-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 672K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: DMA, I2S, PWM, WDT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-180-1
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC366DP64F300SAALXUMA1 Infineon-TriCore_Family_BR-ProductBrochure-v01_00-EN.pdf?fileId=5546d4625d5945ed015dc81f47b436c7
TC366DP64F300SAALXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 180LFBGA
DigiKey Programmable: Not Verified
Supplier Device Package: PG-LFBGA-180-1
Peripherals: DMA, I2S, PWM, WDT
Connectivity: DMA, I2S, PWM, WDT
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Core Size: 32-Bit Dual-Core
Core Processor: TriCore™
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 150°C (TA)
RAM Size: 672K x 8
Program Memory Size: 4MB (4M x 8)
Speed: 300MHz
Mounting Type: Surface Mount
Package / Case: 180-LFBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BAT62-02WH6327
BAT62-02WH6327
Hersteller: Infineon Technologies
Description: MIXER DIODE, LOW BARRIER
Power Dissipation (Max): 100 mW
Current - Max: 20 mA
Supplier Device Package: SCD-80
Voltage - Peak Reverse (Max): 40V
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: Schottky - Single
Package / Case: SC-80
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar
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BAT62-02LSE6327 INFNS15703-1.pdf?t.download=true&u=5oefqw
BAT62-02LSE6327
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 40V 100MW TSSLP-2
Packaging: Bulk
Package / Case: 0201 (0603 Metric)
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-TSSLP-2-1
Part Status: Active
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
auf Bestellung 21676 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2358+0.19 EUR
Mindestbestellmenge: 2358 Stücke
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BAT62-02WE6327
BAT62-02WE6327
Hersteller: Infineon Technologies
Description: MIXER DIODE, LOW BARRIER
Power Dissipation (Max): 100 mW
Current - Max: 20 mA
Supplier Device Package: PG-SOD323-2
Voltage - Peak Reverse (Max): 40V
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: Schottky - Single
Package / Case: SC-76, SOD-323
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar
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BAT62E6327 INFNS15703-1.pdf?t.download=true&u=5oefqw
BAT62E6327
Hersteller: Infineon Technologies
Description: MIXER DIODE, LOW BARRIER
Power Dissipation (Max): 100 mW
Current - Max: 20 mA
Part Status: Active
Supplier Device Package: SOT-143-4
Voltage - Peak Reverse (Max): 40V
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: Schottky - Anti-Parallel
Package / Case: TO-253-4, TO-253AA
Packaging: Bulk
Produkt ist nicht verfügbar
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BAT62E6327HTSA1 Infineon-BAT62-DataSheet-v01_00-EN.pdf?fileId=5546d4627a0b0c7b017a1997a91e3eb2
BAT62E6327HTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 40V 100MW SOT143
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
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BAT6202LE6327XTMA1 fundamentals-of-power-semiconductors
BAT6202LE6327XTMA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 40V 100MW TSLP21
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-TSLP-2-1
Part Status: Discontinued at Digi-Key
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
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BAT6207L4E6327XT fundamentals-of-power-semiconductors
BAT6207L4E6327XT
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 40V 100MW TSLP-4
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: TSLP-4-4
Part Status: Discontinued at Digi-Key
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
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BAT6207L4E6433XTMA1 fundamentals-of-power-semiconductors
BAT6207L4E6433XTMA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 40V 100MW TSLP-4
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: TSLP-4-4
Part Status: Obsolete
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
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BAT6207WE6327HTSA1 fundamentals-of-power-semiconductors
BAT6207WE6327HTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 40V 100MW SOT343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-SOT343-4-1
Part Status: Obsolete
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
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BAT 62-09S E6327 fundamentals-of-power-semiconductors
BAT 62-09S E6327
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 40V 100MW SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-SOT363-PO
Part Status: Discontinued at Digi-Key
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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BAT 62-02W E6327 bat62series.pdf
BAT 62-02W E6327
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 40V 100MW SCD80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: SCD-80
Part Status: Obsolete
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
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BAT6202LSE6327XTSA1 fundamentals-of-power-semiconductors
BAT6202LSE6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 40V 100MW TSSLP-2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-TSSLP-2-1
Part Status: Obsolete
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
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BAT6202WH6327XTSA1 fundamentals-of-power-semiconductors
BAT6202WH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 40V 100MW SCD80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: SCD-80
Part Status: Obsolete
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
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BAT6203WE6327HTSA1 fundamentals-of-power-semiconductors
BAT6203WE6327HTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 40V 100MW SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-SOD323-3D
Part Status: Obsolete
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
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BAT6207WH6327XTSA1 fundamentals-of-power-semiconductors
BAT6207WH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 40V 100MW SOT343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-SOT343-4-1
Part Status: Obsolete
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
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BTS740S2XUMA1 Infineon-BTS740S2-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa390ea280fe0
BTS740S2XUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-20
Features: Status Flag
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 27mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.9A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-20
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 1611 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+10.33 EUR
10+7.95 EUR
25+7.36 EUR
100+6.7 EUR
250+6.49 EUR
Mindestbestellmenge: 2 Stücke
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BTS740S2NT
BTS740S2NT
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-20
Features: Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 27mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.9A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-20-31
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLE4274GV852ATMA1 Infineon-TLE4274-DS-v01_70-EN.pdf?fileId=5546d46258fc0bc101595f8e637f1f8f
TLE4274GV852ATMA1
Hersteller: Infineon Technologies
Description: IC REG LIN 8.5V 400MA TO263-3-1
Packaging: Bulk
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-3-1
Voltage - Output (Min/Fixed): 8.5V
Grade: Automotive
Part Status: Obsolete
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
auf Bestellung 650 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
322+1.44 EUR
Mindestbestellmenge: 322 Stücke
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CY7C0852AV-133BBC CY7C0850-853AV.pdf
CY7C0852AV-133BBC
Hersteller: Infineon Technologies
Description: IC SRAM 4.5MBIT PAR 172FBGA
Packaging: Tray
Package / Case: 172-LBGA
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Technology: SRAM - Dual Port, Synchronous
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 172-FBGA (15x15)
Memory Interface: Parallel
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
auf Bestellung 1101 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+262.86 EUR
Mindestbestellmenge: 2 Stücke
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S29GL01GT11TFIV10 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
S29GL01GT11TFIV10
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
auf Bestellung 431 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+24.64 EUR
10+22.86 EUR
25+22.14 EUR
91+21.15 EUR
182+20.62 EUR
273+20.31 EUR
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S29GL01GT11FHIV20 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
S29GL01GT11FHIV20
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
auf Bestellung 306 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+26.29 EUR
10+24.4 EUR
25+23.63 EUR
50+23.06 EUR
180+22.02 EUR
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T2810N54P270HOSA1
Hersteller: Infineon Technologies
Description: MOD DIODE THYRISTOR
Produkt ist nicht verfügbar
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IPB120N06S402ATMA2 Infineon-I120N06S4_02-DS-v01_02-en.pdf?fileId=db3a30431ff9881501203890b6410cb8
IPB120N06S402ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPB120N06S402ATMA2 Infineon-I120N06S4_02-DS-v01_02-en.pdf?fileId=db3a30431ff9881501203890b6410cb8
IPB120N06S402ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 987 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+5.79 EUR
10+3.81 EUR
100+2.68 EUR
500+2.19 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EVALAHNBIM69D130V01TOBO1 infineon-ug095149-audiohub-nano-digital-xensiv-mems-microphones-evaluation-board-usermanual-en.pdf
EVALAHNBIM69D130V01TOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IM69D130
Packaging: Box
Function: Microphone
Type: Audio
Utilized IC / Part: IM69D130
Supplied Contents: Board(s)
Contents: Board(s)
Secondary Attributes: Graphical User Interface (GUI)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD50N04S308ATMA1-INF
Hersteller: Infineon Technologies
Description: OPTLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 50A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PEF81913FV1.4
PEF81913FV1.4
Hersteller: Infineon Technologies
Description: Q-SMINTIX SECOND GEN
Packaging: Bulk
auf Bestellung 98 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
18+27.09 EUR
Mindestbestellmenge: 18 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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