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IPN80R1K4P7ATMA1 IPN80R1K4P7ATMA1 Infineon Technologies infineon-ipn80r1k4p7-ds-en.pdf Description: MOSFET N-CH 800V 4A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
Produkt ist nicht verfügbar
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IPN80R1K4P7ATMA1 IPN80R1K4P7ATMA1 Infineon Technologies infineon-ipn80r1k4p7-ds-en.pdf Description: MOSFET N-CH 800V 4A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
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14+1.27 EUR
100+0.84 EUR
500+0.66 EUR
1000+0.6 EUR
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IPN80R600P7ATMA1 IPN80R600P7ATMA1 Infineon Technologies Infineon-IPN80R600P7-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f528bb8556b82 Description: MOSFET N-CH 800V 8A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 7.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 500 V
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500+1.08 EUR
1000+1.02 EUR
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IPN80R750P7ATMA1 IPN80R750P7ATMA1 Infineon Technologies infineon-ipn80r750p7-ds-en.pdf Description: MOSFET N-CH 800V 7A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2.7A, 10V
Power Dissipation (Max): 7.2W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
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IRFR2405TRLPBF IRFR2405TRLPBF Infineon Technologies irfr2405pbf.pdf?fileId=5546d462533600a40153562da91b2079 Description: MOSFET N-CH 55V 56A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 34A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 25 V
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EVALM1101TTOBO1 EVALM1101TTOBO1 Infineon Technologies Infineon-IMC100-DS-v01_03-EN.pdf?fileId=5546d46265487f7b016584a0147e7660 Description: EVAL BOARD FOR IMC101T
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IMC101T
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PSB4851TV2.1 Infineon Technologies Description: SAM-AFE ANALOG FRONT END FOR TEL
Packaging: Bulk
Part Status: Active
auf Bestellung 2266 Stücke:
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IPC100N04S5L2R6ATMA1 IPC100N04S5L2R6ATMA1 Infineon Technologies Infineon-IPC100N04S5L-2R6-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc101590801c9332907 Description: MOSFET N-CH 40V 100A 8TDSON-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2925 pF @ 25 V
Qualification: AEC-Q101
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8+2.31 EUR
12+1.51 EUR
100+1.04 EUR
500+0.87 EUR
1000+0.78 EUR
Mindestbestellmenge: 8
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IRS2103STRPBF IRS2103STRPBF Infineon Technologies irs2103.pdf?fileId=5546d462533600a4015356762b71279f Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
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IRS2103STRPBF IRS2103STRPBF Infineon Technologies irs2103.pdf?fileId=5546d462533600a4015356762b71279f Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
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16+1.16 EUR
25+1.05 EUR
100+0.93 EUR
250+0.87 EUR
500+0.83 EUR
1000+0.8 EUR
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DF11MR12W1M1PB11BPSA1 DF11MR12W1M1PB11BPSA1 Infineon Technologies Infineon-DF11MR12W1M1P_B11-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b7017153f08e5b5eac Description: MOSFET 2N-CH 1200V 50A AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 800V
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 50A, 15V
Gate Charge (Qg) (Max) @ Vgs: 124nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 20mA
Supplier Device Package: AG-EASY1B-2
Produkt ist nicht verfügbar
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FF11MR12W1M1PB11BPSA1 FF11MR12W1M1PB11BPSA1 Infineon Technologies Infineon-FF11MR12W1M1P_B11-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b7017153f130c95ebe Description: MOSFET 2N-CH 1200V AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 800V
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 248nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 40mA
Supplier Device Package: AG-EASY1B-2
Part Status: Obsolete
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1+273.19 EUR
10+247.13 EUR
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MB90673PF-GT-199-BND-B MB90673PF-GT-199-BND-B Infineon Technologies Description: IC MCU 16BIT 48KB MROM 80PQFP
Packaging: Tray
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 48KB (48K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16L
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: EBI/EMI, SCI, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 80-QFP (14x20)
Part Status: Obsolete
Number of I/O: 65
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB90673PF-GT-199-BND-BE1 Infineon Technologies Description: IC MICROCONTROLLER 80QFP
Packaging: Tray
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 48KB (48K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16L
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: EBI/EMI, SCI, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 80-QFP (14x20)
Part Status: Obsolete
Number of I/O: 65
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BB804SF2E6327HTSA1 BB804SF2E6327HTSA1 Infineon Technologies DS_448_BB804.pdf Description: DIODE VAR CAP 18V 50MA SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 47.5pF @ 2V, 1MHz
Q @ Vr, F: 200 @ 2V, 100MHz
Capacitance Ratio Condition: C2/C8
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Voltage - Peak Reverse (Max): 18 V
Capacitance Ratio: 1.71
auf Bestellung 501000 Stücke:
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5679+0.081 EUR
Mindestbestellmenge: 5679
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BB804SF2E6327 BB804SF2E6327 Infineon Technologies INFNS15708-1.pdf?t.download=true&u=5oefqw Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 47.5pF @ 2V, 1MHz
Q @ Vr, F: 200 @ 2V, 100MHz
Capacitance Ratio Condition: C2/C8
Supplier Device Package: PG-SOT23
Part Status: Active
Voltage - Peak Reverse (Max): 18 V
Capacitance Ratio: 1.71
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5679+0.081 EUR
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BB804SF1E6327 BB804SF1E6327 Infineon Technologies INFNS15708-1.pdf?t.download=true&u=5oefqw Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 47.5pF @ 2V, 1MHz
Q @ Vr, F: 200 @ 2V, 100MHz
Capacitance Ratio Condition: C2/C8
Supplier Device Package: PG-SOT23
Part Status: Active
Voltage - Peak Reverse (Max): 18 V
Capacitance Ratio: 1.71
Produkt ist nicht verfügbar
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BAS70-05B5000 BAS70-05B5000 Infineon Technologies INFNS09505-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOT 70V 70MA SOT2333
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT23-3-3
Operating Temperature - Junction: 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: AEC-Q101
auf Bestellung 90000 Stücke:
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7059+0.06 EUR
Mindestbestellmenge: 7059
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BAS 70-05 E6433 BAS 70-05 E6433 Infineon Technologies INFNS11040-1.pdf?t.download=true&u=5oefqw Description: SCHOTTKY DIODE
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3606+0.14 EUR
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BAS70-05B5003 BAS70-05B5003 Infineon Technologies INFNS09505-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOT 70V 70MA SOT2333
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT23-3-3
Operating Temperature - Junction: 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: AEC-Q101
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7059+0.06 EUR
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BAS70-05WH6327 Infineon Technologies INFNS30154-1.pdf?t.download=true&u=5oefqw Description: SCHOTTKY DIODE
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT323-3
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Produkt ist nicht verfügbar
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BAS7005E6327 BAS7005E6327 Infineon Technologies INFNS11040-1.pdf?t.download=true&u=5oefqw Description: SCHOTTKY DIODE
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Produkt ist nicht verfügbar
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TLE4997E2XALA1 TLE4997E2XALA1 Infineon Technologies TLE4997E2_v2.10_Apr2020.pdf Description: SENSOR HALL EFFECT ANALOG SSO3
Features: Programmable, Temperature Compensated
Packaging: Tape & Box (TB)
Package / Case: 3-SSIP Module
Output Type: Analog Voltage
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Bandwidth: 3.2kHz
Technology: Hall Effect
Resolution: 12 b
Sensing Range: ±50mT ~ ±200mT
Current - Output (Max): 1mA
Current - Supply (Max): 10mA
Supplier Device Package: PG-SSO-3-92
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE4997E2XALA1 TLE4997E2XALA1 Infineon Technologies TLE4997E2_v2.10_Apr2020.pdf Description: SENSOR HALL EFFECT ANALOG SSO3
Features: Programmable, Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 3-SSIP Module
Output Type: Analog Voltage
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Bandwidth: 3.2kHz
Technology: Hall Effect
Resolution: 12 b
Sensing Range: ±50mT ~ ±200mT
Current - Output (Max): 1mA
Current - Supply (Max): 10mA
Supplier Device Package: PG-SSO-3-92
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 152 Stücke:
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4+4.79 EUR
5+4.26 EUR
10+4.07 EUR
25+3.85 EUR
50+3.69 EUR
100+3.55 EUR
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IGC20T60TEX7SA1 Infineon Technologies Description: IGBT 600V 20A WAFER
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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IRGC15B60KB Infineon Technologies Short_Form_Cat_2016.pdf Description: IGBT CHIP
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IRGC15B60KD Infineon Technologies Short_Form_Cat_2016.pdf Description: IGBT CHIP
Produkt ist nicht verfügbar
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SLE 66CX80PE M5.1 Infineon Technologies SLE 66CX80PE.pdf Description: IC SECURITY CTRLR 8/16BIT M5.1
Packaging: Bulk
Package / Case: M5.1 Chip Card Module
Applications: Security
Supplier Device Package: T-M5.1-9
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SLE 66CX80PE MFC5.6 Infineon Technologies SLE%2066CX80PE.pdf Description: IC SECURITY CTRLR 8/16BIT MFC5.6
Packaging: Bulk
Package / Case: MFC5.6 Chip Card Module
Applications: Security
Supplier Device Package: T-M6.3-8
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SLE 66CX80PE MFC5.8 Infineon Technologies SLE%2066CX80PE.pdf Description: IC SECURITY CTRLR 8/16BIT MFC5.8
Packaging: Bulk
Package / Case: MFC5.8 Chip Card Module
Applications: Security
Supplier Device Package: S-MFC5.8-9
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SLE 66CX80PE DSO8 SLE 66CX80PE DSO8 Infineon Technologies SLE%2066CX80PE.pdf Description: IC SECURITY CTRLR 8/16BIT DS08
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Applications: Security
Supplier Device Package: PG-DSO-8
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPI50N12S3L15AKSA1 IPI50N12S3L15AKSA1 Infineon Technologies IPx50N12S3L-15.pdf Description: MOSFET N-CHANNEL_100+
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15.7mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 60µA
Supplier Device Package: PG-TO262-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V
Qualification: AEC-Q101
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IPP50N12S3L15AKSA1 IPP50N12S3L15AKSA1 Infineon Technologies IPx50N12S3L-15.pdf Description: MOSFET N-CHANNEL_100+
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15.7mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 60µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V
Qualification: AEC-Q101
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ADM6996LC-AC-T-1 ADM6996LC-AC-T-1 Infineon Technologies INFNS08332-1.pdf?t.download=true&u=5oefqw Description: LAN CONTROLLER
Packaging: Bulk
Package / Case: 128-BFQFP
Function: Switch
Interface: RMII
Protocol: Ethernet
Standards: 10/100 Base-T/TX PHY
Supplier Device Package: PG-BFQFP-128
Part Status: Active
DigiKey Programmable: Not Verified
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ADM6996L-AA-T-1 ADM6996L-AA-T-1 Infineon Technologies INFNS08332-1.pdf?t.download=true&u=5oefqw Description: LAN CONTROLLER, 7 CHANNEL(S), 12
Packaging: Tray
Part Status: Active
DigiKey Programmable: Not Verified
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FF600R12KF4NOSA1 Infineon Technologies INFNS14530-1.pdf?t.download=true&u=5oefqw Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 600A
NTC Thermistor: No
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3900 W
Current - Collector Cutoff (Max): 8 mA
Input Capacitance (Cies) @ Vce: 45 nF @ 25 V
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FF600R12KE4PBOSA1 FF600R12KE4PBOSA1 Infineon Technologies Infineon-FF600R12KE4P-DataSheet-v02_01-EN.pdf?fileId=5546d462700c0ae601701f0f154740cf Description: IGBT MOD 1200V 600A AG-62MM-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: AG-62MM-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 38 nF @ 25 V
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FF600R12ME4B73BPSA1 FF600R12ME4B73BPSA1 Infineon Technologies Infineon-FF600R12ME4_B73-DS-v03_00-EN.pdf?fileId=5546d4625e763904015e94b7a3232e2d Description: IGBT MOD 1200V 1200A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
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FF600R12ME4PB72BPSA1 FF600R12ME4PB72BPSA1 Infineon Technologies Infineon-FF600R12ME4P_B72-DataSheet-v03_01-EN.pdf?fileId=5546d4626bfb5124016c19b374fc2851 Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-5
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
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FF900R12IE4VBOSA1 FF900R12IE4VBOSA1 Infineon Technologies Infineon-FF900R12IE4V-DS-v02_00-en_de.pdf?fileId=5546d46145f1f3a40145f59dd8930994 Description: IGBT MOD 1200V 900A 5100W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 5100 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
Produkt ist nicht verfügbar
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IRF7739L2TRPBF IRF7739L2TRPBF Infineon Technologies IRF7739L2PBF.pdf Description: MOSFET N-CH 40V 46A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 375A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 160A, 10V
Power Dissipation (Max): 3.8W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11880 pF @ 25 V
Produkt ist nicht verfügbar
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S6E1C32B0AGP20000 S6E1C32B0AGP20000 Infineon Technologies Infineon-S6E1C32D0AGN20050-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c81ae03fc0181ec33e75c2c49 Description: IC MCU 32BIT 128KB FLASH 32LQFP
Packaging: Tray
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 6x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, LINbus, UART/USART, USB
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Number of I/O: 24
DigiKey Programmable: Not Verified
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13+1.44 EUR
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BGA825L6SE6327XTSA1 BGA825L6SE6327XTSA1 Infineon Technologies BGA825L6S.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433cd75ebf013cf2684b7427e6 Description: IC AMP GPS 1.55-1.615GHZ TSLP6-3
Packaging: Bulk
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 17dB
Current - Supply: 4.8mA
Noise Figure: 0.6dB
P1dB: -10dBm
Test Frequency: 1.575GHz
Supplier Device Package: TSLP-6-3
Part Status: Obsolete
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1888+0.27 EUR
Mindestbestellmenge: 1888
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EVALDRIVE3PHPFD7TOBO1 EVALDRIVE3PHPFD7TOBO1 Infineon Technologies Infineon-Evaluationboard_EVAL_DRIVE_3PH_PFD7-ApplicationNotes-v01_00-EN.pdf?fileId=5546d4626f229553016fa800964b53f6 Description: EVAL BOARD FOR IMC101T
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IMC101T
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1+284.45 EUR
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PEB3264HV1.4 PEB3264HV1.4 Infineon Technologies INTL-S-A0006019977-1.pdf?t.download=true&u=5oefqw Description: SLIC FILTER
Packaging: Bulk
Package / Case: 64-QFP
Mounting Type: Surface Mount
Function: Dual Channel Subscriber Line Interface Circuit (DuSLIC)
Interface: IOM-2, PCM
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.3V
Current - Supply: 105mA
Supplier Device Package: P-MQFP-64-1
Part Status: Active
Number of Circuits: 2
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65+7.58 EUR
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PEB3264HV1.4P PEB3264HV1.4P Infineon Technologies INTL-S-A0006019977-1.pdf?t.download=true&u=5oefqw Description: SLIC FILTER
Packaging: Bulk
Package / Case: 64-QFP
Mounting Type: Surface Mount
Function: Dual Channel Subscriber Line Interface Circuit (DuSLIC)
Interface: IOM-2, PCM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.135V ~ 3.465V
Supplier Device Package: P-MQFP-64-1
Part Status: Active
Number of Circuits: 2
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49+10.18 EUR
Mindestbestellmenge: 49
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PEB3264FV1.4 PEB3264FV1.4 Infineon Technologies INTL-S-A0006019977-1.pdf?t.download=true&u=5oefqw Description: SLIC FILTER
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Dual Channel Subscriber Line Interface Circuit (DuSLIC)
Interface: IOM-2, PCM
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.3V
Current - Supply: 105mA
Supplier Device Package: PG-TQFP-64-1
Part Status: Active
Number of Circuits: 2
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67+7.27 EUR
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PEB 3264 F V1.4 PEB 3264 F V1.4 Infineon Technologies PEBx264%2C%20PEBx265%2C%20PEB436x%2C%20PEB4266.pdf Description: IC TELECOM INTERFACE TQFP-64
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Dual Channel Subscriber Line Interface Circuit (DuSLIC)
Interface: IOM-2, PCM
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.3V
Current - Supply: 105mA
Supplier Device Package: PG-TQFP-64-1
Part Status: Obsolete
Number of Circuits: 2
Produkt ist nicht verfügbar
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S6E2HE6G0AGV2B000 S6E2HE6G0AGV2B000 Infineon Technologies Infineon-S6E2H_Series_32-bit_Arm_Cortex-M4F_FM4_Microcontroller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed234f14ede Description: IC MCU 32BIT 544KB FLASH 120LQFP
Packaging: Tape & Reel (TR)
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Part Status: Active
Number of I/O: 100
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ISC037N03L5ISATMA1 ISC037N03L5ISATMA1 Infineon Technologies Infineon-ISC037N03L5IS-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8b91008098b Description: MOSFET N-CH 30V 20A/78A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
auf Bestellung 15000 Stücke:
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5000+0.43 EUR
10000+0.41 EUR
Mindestbestellmenge: 5000
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ISC037N03L5ISATMA1 ISC037N03L5ISATMA1 Infineon Technologies Infineon-ISC037N03L5IS-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8b91008098b Description: MOSFET N-CH 30V 20A/78A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
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15+1.2 EUR
17+1.05 EUR
100+0.8 EUR
500+0.63 EUR
1000+0.51 EUR
2000+0.46 EUR
Mindestbestellmenge: 15
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IPG20N04S412ATMA1 IPG20N04S412ATMA1 Infineon Technologies Infineon-IPG20N04S4_12-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf60c03c6c05 Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 41W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 15µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TLS4120D0EPVXUMA1 TLS4120D0EPVXUMA1 Infineon Technologies Infineon-TLS4120D0EPV-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e01710b576dc53b30 Description: OPTIREG SWITCHER
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TLS4120D0EPVXUMA1 TLS4120D0EPVXUMA1 Infineon Technologies Infineon-TLS4120D0EPV-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e01710b576dc53b30 Description: OPTIREG SWITCHER
auf Bestellung 5200 Stücke:
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BFR181E6327 BFR181E6327 Infineon Technologies INFNS10732-1.pdf?t.download=true&u=5oefqw Description: LOW-NOISE TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 18.5dB
Power - Max: 175mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT23
Part Status: Active
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3909+0.14 EUR
Mindestbestellmenge: 3909
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BFR181WE6327 BFR181WE6327 Infineon Technologies INFNS14909-1.pdf?t.download=true&u=5oefqw Description: LOW-NOISE TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 19dB
Power - Max: 175mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Supplier Device Package: SOT-323
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TLS850B0TEV33ATMA1 TLS850B0TEV33ATMA1 Infineon Technologies Infineon-TLS850B0TE V33-DS-v01_00-EN.pdf?fileId=5546d4625fe3678401600d3a414c6da3 Description: IC REG LIN 3.3V 500MA PG-TO252-5
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 25 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-5
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 63dB (100Hz)
Voltage Dropout (Max): 0.6V @ 250mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 33 µA
Grade: Automotive
Qualification: AEC-Q100
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9+2.16 EUR
12+1.57 EUR
25+1.42 EUR
100+1.26 EUR
250+1.18 EUR
500+1.14 EUR
1000+1.1 EUR
Mindestbestellmenge: 9
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SPP80N03S2L05 SPP80N03S2L05 Infineon Technologies Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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IRLR2908TRLPBF-INF IRLR2908TRLPBF-INF Infineon Technologies Description: IRLR2908 - HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 23A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D-Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
Produkt ist nicht verfügbar
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BCR198E6327 BCR198E6327 Infineon Technologies INFNS16386-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
auf Bestellung 147000 Stücke:
Lieferzeit 10-14 Tag (e)
9616+0.053 EUR
Mindestbestellmenge: 9616
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IPN80R1K4P7ATMA1 infineon-ipn80r1k4p7-ds-en.pdf
IPN80R1K4P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 4A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
Produkt ist nicht verfügbar
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IPN80R1K4P7ATMA1 infineon-ipn80r1k4p7-ds-en.pdf
IPN80R1K4P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 4A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max): 7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
auf Bestellung 2536 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.71 EUR
14+1.27 EUR
100+0.84 EUR
500+0.66 EUR
1000+0.6 EUR
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IPN80R600P7ATMA1 Infineon-IPN80R600P7-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f528bb8556b82
IPN80R600P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 8A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 7.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 500 V
auf Bestellung 1932 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.6 EUR
10+1.81 EUR
100+1.37 EUR
500+1.08 EUR
1000+1.02 EUR
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IPN80R750P7ATMA1 infineon-ipn80r750p7-ds-en.pdf
IPN80R750P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 7A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2.7A, 10V
Power Dissipation (Max): 7.2W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
auf Bestellung 11213 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.73 EUR
11+1.74 EUR
100+1.17 EUR
500+0.93 EUR
1000+0.85 EUR
Mindestbestellmenge: 7
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IRFR2405TRLPBF irfr2405pbf.pdf?fileId=5546d462533600a40153562da91b2079
IRFR2405TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 56A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 34A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 25 V
auf Bestellung 1220 Stücke:
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Anzahl Preis
12+1.58 EUR
16+1.16 EUR
100+1.07 EUR
500+1.03 EUR
1000+0.97 EUR
Mindestbestellmenge: 12
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EVALM1101TTOBO1 Infineon-IMC100-DS-v01_03-EN.pdf?fileId=5546d46265487f7b016584a0147e7660
EVALM1101TTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IMC101T
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IMC101T
auf Bestellung 9 Stücke:
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Anzahl Preis
1+117.74 EUR
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PSB4851TV2.1
Hersteller: Infineon Technologies
Description: SAM-AFE ANALOG FRONT END FOR TEL
Packaging: Bulk
Part Status: Active
auf Bestellung 2266 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
46+10.56 EUR
Mindestbestellmenge: 46
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IPC100N04S5L2R6ATMA1 Infineon-IPC100N04S5L-2R6-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc101590801c9332907
IPC100N04S5L2R6ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 100A 8TDSON-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2925 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.31 EUR
12+1.51 EUR
100+1.04 EUR
500+0.87 EUR
1000+0.78 EUR
Mindestbestellmenge: 8
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IRS2103STRPBF irs2103.pdf?fileId=5546d462533600a4015356762b71279f
IRS2103STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2256 Stücke:
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IRS2103STRPBF irs2103.pdf?fileId=5546d462533600a4015356762b71279f
IRS2103STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2256 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.62 EUR
16+1.16 EUR
25+1.05 EUR
100+0.93 EUR
250+0.87 EUR
500+0.83 EUR
1000+0.8 EUR
Mindestbestellmenge: 11
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DF11MR12W1M1PB11BPSA1 Infineon-DF11MR12W1M1P_B11-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b7017153f08e5b5eac
DF11MR12W1M1PB11BPSA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 1200V 50A AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 800V
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 50A, 15V
Gate Charge (Qg) (Max) @ Vgs: 124nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 20mA
Supplier Device Package: AG-EASY1B-2
Produkt ist nicht verfügbar
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FF11MR12W1M1PB11BPSA1 Infineon-FF11MR12W1M1P_B11-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b7017153f130c95ebe
FF11MR12W1M1PB11BPSA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 1200V AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 800V
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs: 248nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 40mA
Supplier Device Package: AG-EASY1B-2
Part Status: Obsolete
auf Bestellung 53 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+273.19 EUR
10+247.13 EUR
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MB90673PF-GT-199-BND-B
MB90673PF-GT-199-BND-B
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 48KB MROM 80PQFP
Packaging: Tray
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 48KB (48K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16L
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: EBI/EMI, SCI, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 80-QFP (14x20)
Part Status: Obsolete
Number of I/O: 65
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB90673PF-GT-199-BND-BE1
Hersteller: Infineon Technologies
Description: IC MICROCONTROLLER 80QFP
Packaging: Tray
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 48KB (48K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16L
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: EBI/EMI, SCI, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 80-QFP (14x20)
Part Status: Obsolete
Number of I/O: 65
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BB804SF2E6327HTSA1 DS_448_BB804.pdf
BB804SF2E6327HTSA1
Hersteller: Infineon Technologies
Description: DIODE VAR CAP 18V 50MA SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 47.5pF @ 2V, 1MHz
Q @ Vr, F: 200 @ 2V, 100MHz
Capacitance Ratio Condition: C2/C8
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Voltage - Peak Reverse (Max): 18 V
Capacitance Ratio: 1.71
auf Bestellung 501000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5679+0.081 EUR
Mindestbestellmenge: 5679
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BB804SF2E6327 INFNS15708-1.pdf?t.download=true&u=5oefqw
BB804SF2E6327
Hersteller: Infineon Technologies
Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 47.5pF @ 2V, 1MHz
Q @ Vr, F: 200 @ 2V, 100MHz
Capacitance Ratio Condition: C2/C8
Supplier Device Package: PG-SOT23
Part Status: Active
Voltage - Peak Reverse (Max): 18 V
Capacitance Ratio: 1.71
auf Bestellung 54500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5679+0.081 EUR
Mindestbestellmenge: 5679
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BB804SF1E6327 INFNS15708-1.pdf?t.download=true&u=5oefqw
BB804SF1E6327
Hersteller: Infineon Technologies
Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 125°C
Capacitance @ Vr, F: 47.5pF @ 2V, 1MHz
Q @ Vr, F: 200 @ 2V, 100MHz
Capacitance Ratio Condition: C2/C8
Supplier Device Package: PG-SOT23
Part Status: Active
Voltage - Peak Reverse (Max): 18 V
Capacitance Ratio: 1.71
Produkt ist nicht verfügbar
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BAS70-05B5000 INFNS09505-1.pdf?t.download=true&u=5oefqw
BAS70-05B5000
Hersteller: Infineon Technologies
Description: DIODE ARR SCHOT 70V 70MA SOT2333
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT23-3-3
Operating Temperature - Junction: 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: AEC-Q101
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7059+0.06 EUR
Mindestbestellmenge: 7059
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BAS 70-05 E6433 INFNS11040-1.pdf?t.download=true&u=5oefqw
BAS 70-05 E6433
Hersteller: Infineon Technologies
Description: SCHOTTKY DIODE
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3606+0.14 EUR
Mindestbestellmenge: 3606
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BAS70-05B5003 INFNS09505-1.pdf?t.download=true&u=5oefqw
BAS70-05B5003
Hersteller: Infineon Technologies
Description: DIODE ARR SCHOT 70V 70MA SOT2333
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT23-3-3
Operating Temperature - Junction: 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: AEC-Q101
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7059+0.06 EUR
Mindestbestellmenge: 7059
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BAS70-05WH6327 INFNS30154-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: SCHOTTKY DIODE
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT323-3
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Produkt ist nicht verfügbar
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BAS7005E6327 INFNS11040-1.pdf?t.download=true&u=5oefqw
BAS7005E6327
Hersteller: Infineon Technologies
Description: SCHOTTKY DIODE
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Produkt ist nicht verfügbar
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TLE4997E2XALA1 TLE4997E2_v2.10_Apr2020.pdf
TLE4997E2XALA1
Hersteller: Infineon Technologies
Description: SENSOR HALL EFFECT ANALOG SSO3
Features: Programmable, Temperature Compensated
Packaging: Tape & Box (TB)
Package / Case: 3-SSIP Module
Output Type: Analog Voltage
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Bandwidth: 3.2kHz
Technology: Hall Effect
Resolution: 12 b
Sensing Range: ±50mT ~ ±200mT
Current - Output (Max): 1mA
Current - Supply (Max): 10mA
Supplier Device Package: PG-SSO-3-92
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE4997E2XALA1 TLE4997E2_v2.10_Apr2020.pdf
TLE4997E2XALA1
Hersteller: Infineon Technologies
Description: SENSOR HALL EFFECT ANALOG SSO3
Features: Programmable, Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 3-SSIP Module
Output Type: Analog Voltage
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Bandwidth: 3.2kHz
Technology: Hall Effect
Resolution: 12 b
Sensing Range: ±50mT ~ ±200mT
Current - Output (Max): 1mA
Current - Supply (Max): 10mA
Supplier Device Package: PG-SSO-3-92
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 152 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.79 EUR
5+4.26 EUR
10+4.07 EUR
25+3.85 EUR
50+3.69 EUR
100+3.55 EUR
Mindestbestellmenge: 4
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IGC20T60TEX7SA1
Hersteller: Infineon Technologies
Description: IGBT 600V 20A WAFER
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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IRGC15B60KB Short_Form_Cat_2016.pdf
Hersteller: Infineon Technologies
Description: IGBT CHIP
Produkt ist nicht verfügbar
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IRGC15B60KD Short_Form_Cat_2016.pdf
Hersteller: Infineon Technologies
Description: IGBT CHIP
Produkt ist nicht verfügbar
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SLE 66CX80PE M5.1 SLE 66CX80PE.pdf
Hersteller: Infineon Technologies
Description: IC SECURITY CTRLR 8/16BIT M5.1
Packaging: Bulk
Package / Case: M5.1 Chip Card Module
Applications: Security
Supplier Device Package: T-M5.1-9
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SLE 66CX80PE MFC5.6 SLE%2066CX80PE.pdf
Hersteller: Infineon Technologies
Description: IC SECURITY CTRLR 8/16BIT MFC5.6
Packaging: Bulk
Package / Case: MFC5.6 Chip Card Module
Applications: Security
Supplier Device Package: T-M6.3-8
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SLE 66CX80PE MFC5.8 SLE%2066CX80PE.pdf
Hersteller: Infineon Technologies
Description: IC SECURITY CTRLR 8/16BIT MFC5.8
Packaging: Bulk
Package / Case: MFC5.8 Chip Card Module
Applications: Security
Supplier Device Package: S-MFC5.8-9
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SLE 66CX80PE DSO8 SLE%2066CX80PE.pdf
SLE 66CX80PE DSO8
Hersteller: Infineon Technologies
Description: IC SECURITY CTRLR 8/16BIT DS08
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Applications: Security
Supplier Device Package: PG-DSO-8
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPI50N12S3L15AKSA1 IPx50N12S3L-15.pdf
IPI50N12S3L15AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CHANNEL_100+
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15.7mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 60µA
Supplier Device Package: PG-TO262-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 15500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
360+1.42 EUR
Mindestbestellmenge: 360
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IPP50N12S3L15AKSA1 IPx50N12S3L-15.pdf
IPP50N12S3L15AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CHANNEL_100+
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15.7mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 60µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
360+1.42 EUR
Mindestbestellmenge: 360
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ADM6996LC-AC-T-1 INFNS08332-1.pdf?t.download=true&u=5oefqw
ADM6996LC-AC-T-1
Hersteller: Infineon Technologies
Description: LAN CONTROLLER
Packaging: Bulk
Package / Case: 128-BFQFP
Function: Switch
Interface: RMII
Protocol: Ethernet
Standards: 10/100 Base-T/TX PHY
Supplier Device Package: PG-BFQFP-128
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 103182 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
81+5.88 EUR
Mindestbestellmenge: 81
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ADM6996L-AA-T-1 INFNS08332-1.pdf?t.download=true&u=5oefqw
ADM6996L-AA-T-1
Hersteller: Infineon Technologies
Description: LAN CONTROLLER, 7 CHANNEL(S), 12
Packaging: Tray
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 771 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
74+6.42 EUR
Mindestbestellmenge: 74
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FF600R12KF4NOSA1 INFNS14530-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 600A
NTC Thermistor: No
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3900 W
Current - Collector Cutoff (Max): 8 mA
Input Capacitance (Cies) @ Vce: 45 nF @ 25 V
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+1169.47 EUR
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FF600R12KE4PBOSA1 Infineon-FF600R12KE4P-DataSheet-v02_01-EN.pdf?fileId=5546d462700c0ae601701f0f154740cf
FF600R12KE4PBOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 600A AG-62MM-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: AG-62MM-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 38 nF @ 25 V
auf Bestellung 8 Stücke:
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Anzahl Preis
1+250.36 EUR
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FF600R12ME4B73BPSA1 Infineon-FF600R12ME4_B73-DS-v03_00-EN.pdf?fileId=5546d4625e763904015e94b7a3232e2d
FF600R12ME4B73BPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 1200A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
Produkt ist nicht verfügbar
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FF600R12ME4PB72BPSA1 Infineon-FF600R12ME4P_B72-DataSheet-v03_01-EN.pdf?fileId=5546d4626bfb5124016c19b374fc2851
FF600R12ME4PB72BPSA1
Hersteller: Infineon Technologies
Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-5
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
Produkt ist nicht verfügbar
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FF900R12IE4VBOSA1 Infineon-FF900R12IE4V-DS-v02_00-en_de.pdf?fileId=5546d46145f1f3a40145f59dd8930994
FF900R12IE4VBOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 900A 5100W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 5100 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
Produkt ist nicht verfügbar
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IRF7739L2TRPBF IRF7739L2PBF.pdf
IRF7739L2TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 46A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 375A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 160A, 10V
Power Dissipation (Max): 3.8W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11880 pF @ 25 V
Produkt ist nicht verfügbar
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S6E1C32B0AGP20000 Infineon-S6E1C32D0AGN20050-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c81ae03fc0181ec33e75c2c49
S6E1C32B0AGP20000
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 32LQFP
Packaging: Tray
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 6x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, LINbus, UART/USART, USB
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Number of I/O: 24
DigiKey Programmable: Not Verified
auf Bestellung 271 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.44 EUR
Mindestbestellmenge: 13
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BGA825L6SE6327XTSA1 BGA825L6S.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433cd75ebf013cf2684b7427e6
BGA825L6SE6327XTSA1
Hersteller: Infineon Technologies
Description: IC AMP GPS 1.55-1.615GHZ TSLP6-3
Packaging: Bulk
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 17dB
Current - Supply: 4.8mA
Noise Figure: 0.6dB
P1dB: -10dBm
Test Frequency: 1.575GHz
Supplier Device Package: TSLP-6-3
Part Status: Obsolete
auf Bestellung 656038 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1888+0.27 EUR
Mindestbestellmenge: 1888
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EVALDRIVE3PHPFD7TOBO1 Infineon-Evaluationboard_EVAL_DRIVE_3PH_PFD7-ApplicationNotes-v01_00-EN.pdf?fileId=5546d4626f229553016fa800964b53f6
EVALDRIVE3PHPFD7TOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IMC101T
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IMC101T
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+284.45 EUR
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PEB3264HV1.4 INTL-S-A0006019977-1.pdf?t.download=true&u=5oefqw
PEB3264HV1.4
Hersteller: Infineon Technologies
Description: SLIC FILTER
Packaging: Bulk
Package / Case: 64-QFP
Mounting Type: Surface Mount
Function: Dual Channel Subscriber Line Interface Circuit (DuSLIC)
Interface: IOM-2, PCM
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.3V
Current - Supply: 105mA
Supplier Device Package: P-MQFP-64-1
Part Status: Active
Number of Circuits: 2
auf Bestellung 10974 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
65+7.58 EUR
Mindestbestellmenge: 65
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PEB3264HV1.4P INTL-S-A0006019977-1.pdf?t.download=true&u=5oefqw
PEB3264HV1.4P
Hersteller: Infineon Technologies
Description: SLIC FILTER
Packaging: Bulk
Package / Case: 64-QFP
Mounting Type: Surface Mount
Function: Dual Channel Subscriber Line Interface Circuit (DuSLIC)
Interface: IOM-2, PCM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.135V ~ 3.465V
Supplier Device Package: P-MQFP-64-1
Part Status: Active
Number of Circuits: 2
auf Bestellung 420 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
49+10.18 EUR
Mindestbestellmenge: 49
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PEB3264FV1.4 INTL-S-A0006019977-1.pdf?t.download=true&u=5oefqw
PEB3264FV1.4
Hersteller: Infineon Technologies
Description: SLIC FILTER
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Dual Channel Subscriber Line Interface Circuit (DuSLIC)
Interface: IOM-2, PCM
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.3V
Current - Supply: 105mA
Supplier Device Package: PG-TQFP-64-1
Part Status: Active
Number of Circuits: 2
auf Bestellung 104 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+7.27 EUR
Mindestbestellmenge: 67
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PEB 3264 F V1.4 PEBx264%2C%20PEBx265%2C%20PEB436x%2C%20PEB4266.pdf
PEB 3264 F V1.4
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE TQFP-64
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Dual Channel Subscriber Line Interface Circuit (DuSLIC)
Interface: IOM-2, PCM
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.3V
Current - Supply: 105mA
Supplier Device Package: PG-TQFP-64-1
Part Status: Obsolete
Number of Circuits: 2
Produkt ist nicht verfügbar
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S6E2HE6G0AGV2B000 Infineon-S6E2H_Series_32-bit_Arm_Cortex-M4F_FM4_Microcontroller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed234f14ede
S6E2HE6G0AGV2B000
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 544KB FLASH 120LQFP
Packaging: Tape & Reel (TR)
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Part Status: Active
Number of I/O: 100
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ISC037N03L5ISATMA1 Infineon-ISC037N03L5IS-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8b91008098b
ISC037N03L5ISATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 20A/78A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.43 EUR
10000+0.41 EUR
Mindestbestellmenge: 5000
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ISC037N03L5ISATMA1 Infineon-ISC037N03L5IS-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8b91008098b
ISC037N03L5ISATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 20A/78A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
auf Bestellung 18934 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.2 EUR
17+1.05 EUR
100+0.8 EUR
500+0.63 EUR
1000+0.51 EUR
2000+0.46 EUR
Mindestbestellmenge: 15
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IPG20N04S412ATMA1 Infineon-IPG20N04S4_12-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf60c03c6c05
IPG20N04S412ATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 41W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 15µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TLS4120D0EPVXUMA1 Infineon-TLS4120D0EPV-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e01710b576dc53b30
TLS4120D0EPVXUMA1
Hersteller: Infineon Technologies
Description: OPTIREG SWITCHER
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
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TLS4120D0EPVXUMA1 Infineon-TLS4120D0EPV-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e01710b576dc53b30
TLS4120D0EPVXUMA1
Hersteller: Infineon Technologies
Description: OPTIREG SWITCHER
auf Bestellung 5200 Stücke:
Lieferzeit 10-14 Tag (e)
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BFR181E6327 INFNS10732-1.pdf?t.download=true&u=5oefqw
BFR181E6327
Hersteller: Infineon Technologies
Description: LOW-NOISE TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 18.5dB
Power - Max: 175mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT23
Part Status: Active
auf Bestellung 54000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3909+0.14 EUR
Mindestbestellmenge: 3909
Im Einkaufswagen  Stück im Wert von  UAH
BFR181WE6327 INFNS14909-1.pdf?t.download=true&u=5oefqw
BFR181WE6327
Hersteller: Infineon Technologies
Description: LOW-NOISE TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 19dB
Power - Max: 175mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Supplier Device Package: SOT-323
Produkt ist nicht verfügbar
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TLS850B0TEV33ATMA1 Infineon-TLS850B0TE V33-DS-v01_00-EN.pdf?fileId=5546d4625fe3678401600d3a414c6da3
TLS850B0TEV33ATMA1
Hersteller: Infineon Technologies
Description: IC REG LIN 3.3V 500MA PG-TO252-5
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 25 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-5
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 63dB (100Hz)
Voltage Dropout (Max): 0.6V @ 250mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 33 µA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2613 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.16 EUR
12+1.57 EUR
25+1.42 EUR
100+1.26 EUR
250+1.18 EUR
500+1.14 EUR
1000+1.1 EUR
Mindestbestellmenge: 9
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SPP80N03S2L05
SPP80N03S2L05
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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IRLR2908TRLPBF-INF
IRLR2908TRLPBF-INF
Hersteller: Infineon Technologies
Description: IRLR2908 - HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 23A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D-Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
Produkt ist nicht verfügbar
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BCR198E6327 INFNS16386-1.pdf?t.download=true&u=5oefqw
BCR198E6327
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
auf Bestellung 147000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9616+0.053 EUR
Mindestbestellmenge: 9616
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